High Frequency Package

Abstract

To provide a radio frequency package.SOLUTION: A radio frequency package according to one embodiment of the present invention includes: a first connection member having a first stack structure including at least one first insulating layer and at least one first wiring layer alternately stacked therein; a second connection member having a second stack structure including at least one second insulating layer and at least one second wiring layer alternately stacked therein; a core member including a core insulating layer and disposed between the first and second connection members; and a first chip antenna disposed to be surrounded by the core insulating layer. The first chip antenna includes: a first dielectric layer disposed to be surrounded by the core insulating layer; a patch antenna pattern disposed on an upper surface of the first dielectric layer; and a feed via disposed to at least partially penetrate the first dielectric layer, providing a feed path of the patch antenna pattern and electrically connected to the at least one first wiring layer.SELECTED DRAWING: Figure 1a

Description

[Technical field]

[0001] The present invention relates to high frequency packages. [Background technology]

[0002] Data traffic in mobile communications is increasing dramatically every year. Active technological development is underway to support this rapidly increasing data in real time over wireless networks. For example, applications such as data content based on the Internet of Things (IoT), Augmented Reality (AR), Virtual Reality (VR), live VR / AR combined with SNS, autonomous driving, and Sync View (real-time video transmission from the user's viewpoint using an ultra-small camera) require communications (e.g., 5G communications, mmWave communications, etc.) that support the transmission and reception of large volumes of data.

[0003] Recently, millimeter wave (mmWave) communications, including fifth generation (5G) communications, have been actively researched, and research is also being actively conducted to commercialize and standardize chip antenna modules that will smoothly realize this.

[0004] RF signals in high frequency bands (e.g., 24 GHz, 28 GHz, 36 GHz, 39 GHz, 60 GHz, etc.) are easily absorbed during transmission, leading to losses and the quality of communication can rapidly deteriorate. Therefore, antennas for communication in high frequency bands require a technical approach different from conventional antenna technology, and the development of special technologies such as separate power amplifiers to ensure antenna gain, integrate antennas with RFIC, and ensure EIRP (Effective Isotropic Radiated Power) is required. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Korean Patent Publication No. 10-2019-0104978 Summary of the Invention [Problem to be solved by the invention]

[0006] SUMMARY OF THE PRESENT EMBODIMENT It is an object of the present invention to provide a high frequency package. [Means for solving the problem]

[0007] According to one embodiment of the present invention, a high-frequency package includes a first connecting member having a first laminated structure in which at least one first insulating layer and at least one first wiring layer are alternately laminated, a second connecting member having a second laminated structure in which at least one second insulating layer and at least one second wiring layer are alternately laminated, a core member including a core insulating layer and arranged between the first and second connecting members, and a first chip antenna arranged to be surrounded by the core insulating layer, wherein the first chip antenna includes a first dielectric layer arranged to be surrounded by the core insulating layer, a patch antenna pattern arranged on an upper surface of the first dielectric layer, and a power supply via arranged to penetrate at least a portion of the first dielectric layer in a thickness direction, providing a power supply path for the patch antenna pattern and electrically connected to the at least one first wiring layer. Effect of the Invention

[0008] A high frequency package according to an embodiment of the present invention can efficiently provide space for arranging a chip antenna while using a chip antenna that can have relatively improved antenna performance (e.g., gain, bandwidth, maximum output, polarization efficiency) relative to its size. [Brief description of the drawings]

[0009] [Figure 1a] 1 illustrates a high frequency package according to one embodiment of the present invention. [Figure 1b]1 illustrates a high frequency package according to one embodiment of the present invention. [Figure 1c] 1 illustrates a high frequency package according to one embodiment of the present invention. [Figure 2a] 1A to 1C are diagrams showing various structures of a chip antenna in a high frequency package according to an embodiment of the present invention. [Figure 2b] 1A to 1C are diagrams showing various structures of a chip antenna in a high frequency package according to an embodiment of the present invention. [Figure 2c] 1A to 1C are diagrams showing various structures of a chip antenna in a high frequency package according to an embodiment of the present invention. [Figure 2d] 1A to 1C are diagrams showing various structures of a chip antenna in a high frequency package according to an embodiment of the present invention. [Figure 3a] 5A and 5B are diagrams illustrating a connection structure of a second connection member of the high frequency package according to an embodiment of the present invention. [Figure 3b] 5A and 5B are diagrams illustrating a connection structure of a second connection member of the high frequency package according to an embodiment of the present invention. [Figure 4a] 13 is a top view illustrating a structure in which a second connecting member is omitted from a high frequency package according to an embodiment of the present invention. FIG. [Figure 4b] 13 is a top view illustrating a structure in which a second connecting member is omitted from a high frequency package according to an embodiment of the present invention. FIG. [Figure 5a] 1A to 1C are diagrams illustrating a method for manufacturing a high frequency package according to an embodiment of the present invention. [Figure 5b] 1A to 1C are diagrams illustrating a method for manufacturing a high frequency package according to an embodiment of the present invention. [Figure 5c] 1A to 1C are diagrams illustrating a method for manufacturing a high frequency package according to an embodiment of the present invention. [Figure 5d] 1A to 1C are diagrams illustrating a method for manufacturing a high frequency package according to an embodiment of the present invention. [Figure 5e] 1A to 1C are diagrams illustrating a method for manufacturing a high frequency package according to an embodiment of the present invention. [Figure 5f] 1A to 1C are diagrams illustrating a method for manufacturing a high frequency package according to an embodiment of the present invention. [Figure 6a] 4A and 4B are diagrams illustrating a connection structure of a first connection member of the high frequency package according to an embodiment of the present invention. [Figure 6b] 4A and 4B are diagrams illustrating a connection structure of a first connection member of the high frequency package according to an embodiment of the present invention. [Figure 7] 1 is a plan view illustrating an example of the arrangement of a substrate on which chip antennas are arranged in an electronic device according to an embodiment of the present invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The following detailed description of the invention refers to the accompanying drawings, which show, by way of example, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the invention are different from one another, but are not necessarily mutually exclusive. For example, a specific shape, structure, and characteristic described herein may relate to one embodiment and may be implemented in other embodiments without departing from the spirit and scope of the invention. It should also be understood that the location or arrangement of individual components within each disclosed embodiment may be modified without departing from the spirit and scope of the invention. Therefore, the following detailed description should not be taken in a limiting sense, and the scope of the invention is limited only by the appended claims together with the full scope of equivalents to which the claims are entitled. In the drawings, like reference numerals refer to the same or similar features across several aspects.

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the present invention.

[0012] 1a to 1c are diagrams showing a high frequency package according to one embodiment of the present invention.

[0013] Referring to FIG. 1a, a high frequency package 200a according to one embodiment of the present invention may have a structure incorporating a first chip antenna 100a, and the first chip antenna 100a may include a first dielectric layer 131a, a patch antenna pattern 110a, and a power feed via 120a.

[0014] The first dielectric layer 131a may have a dielectric medium having a higher dielectric constant than air, for example, the first dielectric layer 131a may be made of ceramic, thereby having a relatively high dielectric constant.

[0015] Because the first chip antenna 100a can be manufactured separately from the rest of the structure of the high frequency package 200a and incorporated into the high frequency package 200a, the first dielectric layer 131a can be made of a material different from the material of the insulating layer of the high frequency package 200a (e.g., prepreg) and can be realized in a manner selected from a variety of free methods more diverse than the insulating layer.

[0016] This allows first chip antenna 100a to have improved antenna performance (e.g., gain, bandwidth, maximum output, polarization efficiency) relative to its size compared to antennas based on a laminated structure of wiring layers and insulating layers of a connecting member.

[0017] For example, the first dielectric layer 131a may be made of a material having a relatively high dielectric constant, such as a ceramic-based material, such as low temperature co-fired ceramic (LTCC), a glass-based material, or a material having a relatively low dielectric tangent, such as Teflon, and may be configured to have a higher dielectric constant or stronger durability by further containing at least one of magnesium (Mg), silicon (Si), aluminum (Al), calcium (Ca), and titanium (Ti). For example, the first dielectric layer 131a may include Mg2SiO4, MgAlO4, and CaTiO3.

[0018] The higher the dielectric constant of first dielectric layer 131a, the shorter the wavelength of a radio frequency (RF) signal transmitted or propagated from the periphery of first dielectric layer 131a. In addition, the shorter the wavelength of the RF signal, the smaller the size of first dielectric layer 131a. As a result, the size of first chip antenna 100a according to an embodiment of the present invention can be reduced. In addition, the lower the dielectric tangent of first dielectric layer 131a, the smaller the energy loss of the RF signal in first dielectric layer 131a.

[0019] The smaller the size of the first chip antennas 100a, the greater the number of first chip antennas 100a that can be arranged in a unit volume. The greater the number of first chip antennas 100a that can be arranged in a unit volume, the greater the total gain or maximum output of the first chip antennas 100a per unit volume.

[0020] As a result, the higher the dielectric constant of first dielectric layer 131a, the more efficiently the performance relative to the size of first chip antenna 100a can be improved.

[0021] The patch antenna pattern 110a may be disposed on the upper surface of the first dielectric layer 131a. The relatively wide upper surface of the patch antenna pattern 110a may concentrate the radiation pattern in the vertical direction (Z direction), so that RF signals may be remotely transmitted and / or received in the vertical direction, and RF signals having frequencies within a resonant frequency-based bandwidth of the patch antenna pattern 110a (e.g., 24 GHz, 28 GHz, 36 GHz, 39 GHz, 60 GHz) may be remotely transmitted and / or received.

[0022] For example, the patch antenna pattern 110a may be formed by applying and / or filling a conductive paste onto the first dielectric layer 131a and then drying the paste.

[0023] The power feed via 120a may be disposed to penetrate at least a portion of the first dielectric layer 131a in the thickness direction and may act as a power feed path for the patch antenna pattern 110a, i.e., the power feed via 120a may provide a path through which a surface current flows in the patch antenna pattern 110a when the patch antenna pattern 110a remotely transmits and / or receives an RF signal.

[0024] For example, the power supply via 120a may have a structure extending in the vertical direction within the first dielectric layer 131a, and may be formed by filling a through hole in the first dielectric layer 131a formed by a laser with a conductive material (e.g., copper, nickel, tin, silver, gold, palladium, etc.).

[0025] For example, the feed via 120a can contact a point on the patch antenna pattern 110a, or, depending on the design, can provide a feed path to the patch antenna pattern 110a without contacting the patch antenna pattern 110a.

[0026] Referring to FIG. 1a, a high frequency package 200a according to an embodiment of the present invention may include a first connecting member 210a, a second connecting member 220a, and a core member 230a.

[0027] The first connection member 210a may have a first laminated structure in which at least one first insulating layer 211a and at least one first wiring layer 212a are alternately laminated. For example, the first connection member 210a may include a first via 213a extending in a direction perpendicular to the first insulating layer 211a, and may further include a first SR layer 214a.

[0028] For example, the first connection member 210a may have a structure built up on the lower side of the core member 230a, and thus, the first via 213a that may be included in the first connection member 210a may have a structure in which the width of the lower portion is greater than the width of the upper portion.

[0029] The second connection member 220a may have a second laminated structure in which at least one second insulating layer 221a and at least one second wiring layer 222a are alternately laminated. For example, the second connection member 220a may include a second via 223a extending in a direction perpendicular to the second insulating layer 221a, and may further include a second SR layer 224a.

[0030] For example, the second connection member 220a may have a structure built up on the upper side of the core member 230a, and thus, the second via 223a that may be included in the second connection member 220a may have a structure in which the width of the upper portion is longer than the width of the lower portion.

[0031] At least one first wiring layer 212a and at least one second wiring layer 222a may be formed on at least a portion of an upper surface or a lower surface of a corresponding insulating layer to include pre-designed wiring and / or planes, which may be electrically connected to each other through a first via 213a and / or a second via 223a, respectively.

[0032] For example, at least one first wiring layer 212a, at least one second wiring layer 222a, the first via 213a, and the second via 223a may be made of a metal material (e.g., at least one of conductive materials such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), or an alloy thereof).

[0033] For example, the at least one first insulating layer 211a, the at least one second insulating layer 221a, and the core insulating layer 231a may be realized using FR4, LCP (Liquid Crystal Polymer), LTCC (Low Temperature Co-fired Ceramic), a thermosetting resin such as epoxy resin, a thermoplastic resin such as polyimide, or a resin in which these resins are impregnated into a core material such as glass fiber (glass cloth, glass fabric) together with an inorganic filler, a prepreg, ABF (Ajinomoto Build-up Film), FR-4, BT (Bismaleimide Triazine), a photosensitive insulating (Photo Imageable Dielectric: PID) resin, a general copper clad laminate (CCL), or a glass or ceramic-based insulating material.

[0034] The core member 230a may include a core insulating layer 231a and may be disposed between the first and second connecting members 210a and 220a. For example, the core member 230a may include a core wiring layer 232a disposed on an upper surface and / or a lower surface of the core insulating layer 231a and may include a core via 233a penetrating the core insulating layer 231a and electrically connecting at least one first wiring layer 212a and at least one second wiring layer 222a.

[0035] Core insulating layer 231a may surround first chip antenna 100a. For example, core insulating layer 231a may include a through hole or a cavity. First chip antenna 100a may be disposed in the through hole or the cavity and thus surrounded by core insulating layer 231a. First dielectric layer 131a may also be surrounded by core insulating layer 231a.

[0036] As a result, the high frequency package 200a according to one embodiment of the present invention can efficiently provide placement space for the first chip antenna 100a while using the first chip antenna 100a that can have relatively improved antenna performance (e.g., gain, bandwidth, maximum output, polarization efficiency) relative to its size.

[0037] For example, the high frequency package 200a according to one embodiment of the present invention can use the first chip antenna 100a without using mounting space on the top and / or bottom, and therefore can have a further reduced horizontal area and can use more components (e.g., impedance elements, high frequency filters, etc.) that require mounting space on the top and / or bottom more freely.

[0038] In addition, since the core insulating layer 231a and the first chip antenna 100a between the first and second connecting members 210a, 220a can be crimped together, the high frequency package 200a according to one embodiment of the present invention can ensure structural stability (e.g., frequency of warpage, strength) while using the first chip antenna 100a.

[0039] In addition, first chip antenna 100a can be electrically connected to first wiring layer 212a without using solder, which has a relatively low melting point and is unstable, thereby reducing energy loss when an RF signal transmitted and received remotely passes between first connecting member 210a and first chip antenna 100a.

[0040] For example, first chip antenna 100a may further include an electrical connection structure 160a that connects between power feed via 120a and at least one first wiring layer 212a on first connection member 210a.

[0041] Electrical connecting structure 160a may be made of the same material (e.g., copper) as at least one first wiring layer 212a and may be pre-arranged before first chip antenna 100a is embedded in high frequency package 200a, thereby providing a more stable configuration, thereby further reducing energy loss when an RF signal transmitted and received remotely passes between first connecting member 210a and first chip antenna 100a.

[0042] Referring to FIG. 1a, at least one second wiring layer 222a may include a coupling patch pattern 225a arranged to overlap the patch antenna pattern 110a in the vertical direction.

[0043] The coupling patch pattern 225a may be electromagnetically coupled to the patch antenna pattern 110a and may provide an additional resonant frequency to the patch antenna pattern 110a, thereby allowing the patch antenna pattern 110a to have a wider bandwidth.

[0044] Since coupling patch pattern 225a is disposed on second connecting member 220a at a distance from first chip antenna 100a, it is possible to have an expanded bandwidth based on coupling patch pattern 225a without increasing the thickness of first chip antenna 100a in the vertical direction.

[0045] Referring to FIG. 1a, core member 230a may further include plating member 235a disposed on a side surface of core insulating layer 231a in a direction facing first chip antenna 100a.

[0046] Since plating member 235a can reflect the horizontal component of the vertical and horizontal components contained in the radiated RF signal, the radiation pattern of first chip antenna 100a can be further concentrated in the upward and downward directions (Z direction), and the gain of first chip antenna 100a can be further improved.

[0047] For example, plating member 235a can be formed after a through hole or cavity is formed in core insulating layer 231a and before first chip antenna 100a is disposed.

[0048] Referring to FIG. 1a, the core member 230a may further include an insulating member 240a disposed to fill at least a portion of a space (eg, a through hole, a cavity) surrounded by the core insulating layer 231a.

[0049] This further improves the structural stability of core member 230a, so that the high-frequency package 200a according to one embodiment of the present invention can ensure structural stability (e.g., frequency and strength of warpage) while using the first chip antenna 100a.

[0050] In addition, the insulating member 240a can support the build-up of the first and second connecting members 210a and 220a, thereby supporting the structural stability of the first and second connecting members 210a and 220a.

[0051] 1b, high frequency package 200b according to an embodiment of the present invention may have a structure in which coupling patch pattern 225a and / or plating member 235a shown in FIG 1a are omitted, and a space for arranging first chip antenna 100a may be efficiently provided while using first chip antenna 100a that may have relatively improved antenna performance relative to its size.

[0052] Referring to FIG. 1c, a high frequency package 200c according to an embodiment of the present invention may have a structure in which the core via 233a shown in FIG. 1b is omitted.

[0053] Meanwhile, thickness H3 of core insulating layer 231a may be thicker than thickness H1 of one of at least one first insulating layer and thicker than thickness H2 of one of at least one second insulating layer. As a result, high frequency package 200c according to an embodiment of the present invention can further improve structural stability (e.g., warpage frequency and strength) while using first chip antenna 100a.

[0054] 2a to 2d are diagrams showing various structures of a chip antenna in a high frequency package according to an embodiment of the present invention.

[0055] Referring to FIG. 2a, a first chip antenna 100b of a high frequency package 200d according to an embodiment of the present invention may further include at least one of a second dielectric layer 132b, an adhesive layer 140b, and an upper patch pattern 112b.

[0056] The second dielectric layer 132b may be disposed on the upper surface of the patch antenna pattern 110b and surrounded by the core insulating layer 231a. For example, the second dielectric layer 132b may be realized in the same manner as the first dielectric layer 131b and may be made of the same material.

[0057] In addition, the second dielectric layer 132b may be made of a material different from the material (e.g., prepreg) of the core insulating layer 231a of the high frequency package 200d, and may be realized in a manner selected from a variety of free methods more diverse than the core insulating layer 231a.

[0058] For example, the second dielectric layer 132b can act as a dielectric medium having a relatively high dielectric constant or a relatively low dielectric tangent, which can further concentrate the radiation pattern of the patch antenna pattern 110b in the upward and downward direction (Z direction), and further improve the gain of the patch antenna pattern 110b.

[0059] The adhesive layer 140b is disposed between the first and second dielectric layers 131b and 132b and may have higher adhesiveness than the first and second dielectric layers 131b and 132b. For example, the adhesive layer 140b may be made of an adhesive polymer.

[0060] As a result, the positional relationship between the first and second dielectric layers 131b, 132b can be fixed more stably, and the boundary conditions of the dielectric media of the first and second dielectric layers 131b, 132b can more efficiently concentrate the radiation pattern of the patch antenna pattern 110b in the vertical direction (e.g., the Z direction).

[0061] The upper patch pattern 112b may be disposed on the upper surface of the second dielectric layer 132b between the coupling patch pattern 225a and the patch antenna pattern 110b.

[0062] For example, the upper patch pattern 112b can be electromagnetically coupled to the patch antenna pattern 110b and can provide an additional resonant frequency to the patch antenna pattern 110b, thereby allowing the patch antenna pattern 110b to have an even wider bandwidth.

[0063] As an example, the upper patch pattern 112b may have a horizontal size different from the horizontal size of the patch antenna pattern 110b and may have a second bandwidth that does not overlap with the first bandwidth of the patch antenna pattern 110b.

[0064] Thus, the first chip antenna 100b can have a plurality of frequency bands and can remotely transmit and / or receive first and second RF signals having different fundamental frequencies.

[0065] Referring to FIG. 2b, a first chip antenna 100c of a high frequency package 200e according to one embodiment of the present invention may include a feed via 120a providing a feed path for a first RF signal, and a feed via 120c providing a feed path for a second RF signal.

[0066] The high frequency package 200e may further include a connecting via 226b that electrically connects the coupling patch pattern 225b and the first chip antenna 100c.

[0067] For example, the coupling via 226b may provide a feed path for the second RF signal to the coupling patch pattern 225b and may be electrically coupled to the feed via 120c.

[0068] The structure in which the connecting via 226b and the power supply via 120c are connected can pass through the patch antenna pattern 110a and does not need to contact the patch antenna pattern 110a.

[0069] Referring to FIG. 2c, an adhesive layer 140c of a first chip antenna 100d of a high frequency package 200f according to an embodiment of the present invention may have a cavity 141b in which a patch antenna pattern 110b is disposed.

[0070] Cavity 141b may contain air having a lower dielectric constant than that of adhesive layer 140c and may act as a dielectric medium having a relatively low dielectric constant, thereby reducing energy leaking in the horizontal direction during the electromagnetic coupling process of coupling patch pattern 225b of patch antenna pattern 110a and / or upper patch pattern 112b, thereby further improving the antenna performance of first chip antenna 100d.

[0071] Referring to FIG. 2d, in a second connection member 220a of a high frequency package 200g according to an embodiment of the present invention, a region 228a overlapping at least a portion of the patch antenna pattern 110a may be in the form of an aperture.

[0072] This allows a boundary condition of a dielectric medium to be formed on the side of region 228a, and by refracting and / or reflecting the horizontal components of the RF signal remotely transmitted and received at patch antenna pattern 110a, the radiation pattern of patch antenna pattern 110a can be further concentrated in the upward and downward directions (e.g., the Z direction), thereby further improving the gain of patch antenna pattern 110a.

[0073] For example, the second SR layer 224a can have a hole formed in an area 228a that overlaps at least a portion of the patch antenna pattern 110a.

[0074] As a result, the height of the opening in the region 228a of the second connecting member 220a can be made longer without substantially increasing the thickness of the high-frequency package 200g, thereby further improving the gain of the patch antenna pattern 110a relative to the thickness of the high-frequency package 200g.

[0075] 3a and 3b are diagrams illustrating a connection structure of a second connection member of a high frequency package according to an embodiment of the present invention.

[0076] Referring to FIG. 3a, the high frequency package 200h according to an embodiment of the present invention may further include an impedance element 350 disposed on an upper surface of the second connection member 220a and electrically connected to at least one second wiring layer 222a.

[0077] For example, the impedance element 350 may be a capacitor or an inductor and may include an impedance body 351 that forms an impedance, and an outer electrode 352 that conveys the impedance.

[0078] The external electrode 352 may be mounted on the upper surface of the second connecting member 220a via a mounting electrical connecting structure 331. The mounting electrical connecting structure 331 may bond between the impedance element 350 and the second connecting member 220a via solder having a relatively low melting point, and may be inserted into a preset position of the second SR layer 224a.

[0079] The impedance element 350 can transmit impedance to the outside (eg, RFIC) via the external electrode 352, at least one second wiring layer 222a, the core via 233a, and at least one first wiring layer 212a.

[0080] The high frequency package 200h according to an embodiment of the present invention may further include a connector 340 disposed on an upper surface of the second connection member 220a and electrically connected to at least one second wiring layer 222a.

[0081] Connector 340 can provide an electrical path for a base signal having a lower frequency than the frequency of an RF signal remotely transmitted and received via first chip antenna 100a. The base signal can be transmitted to the outside (e.g., an RFIC) via connector 340, at least one second wiring layer 222a, core via 233a, and at least one first wiring layer 212a, and can be converted into an RF signal in the outside (e.g., an RFIC). In addition, the RF signal can be transmitted to first chip antenna 100a via at least one first wiring layer 212a and radiated.

[0082] For example, but not limited to, the connector 340 may have a structure to which a coaxial cable is physically coupled.

[0083] Referring to FIG. 3b, the high frequency package 200i according to one embodiment of the present invention may further include second chip antennas 400a, 400b disposed on the upper surface of the second connecting member 220a and electrically connected to at least one second wiring layer 222a.

[0084] The second chip antenna 400a may include at least a portion of a patch antenna pattern 410a, a power feed via 420a, a dielectric layer 430a, and an electrical connecting structure 460a, and the second chip antenna 400b may include at least a portion of a patch antenna pattern 410b, a power feed via 420b, a dielectric layer 430b, and an electrical connecting structure 460b.

[0085] Second chip antennas 400a, 400b may be manufactured in the same or similar manner as first chip antenna 100a, and may be mounted on the upper surface of second connecting member 220a via mounting electrical connecting structures 332a, 332b. Mounting electrical connecting structures 332a, 332b may be, but are not limited to, solder balls or pads.

[0086] Since the radiation pattern of the first chip antenna 100a and the radiation pattern of the second chip antennas 400a, 400b can overlap with each other, the high frequency package 200i according to one embodiment of the present invention can have a gain and maximum output corresponding to the total number of the first chip antennas 100a and the second chip antennas 400a, 400b.

[0087] Since first chip antenna 100a is built into high frequency package 200i, the total number of first chip antennas 100a and second chip antennas 400a, 400b relative to the size of high frequency package 200i can be increased.

[0088] As a result, the high frequency package 200i according to an embodiment of the present invention can have improved gain and maximum output relative to its size.

[0089] For example, the size of patch antenna patterns 410a, 410b of second chip antennas 400a, 400b may be different from the size of patch antenna pattern 110a of first chip antenna 100a. As an example, the dielectric constant of dielectric layers 430a, 430b of second chip antennas 400a, 400b may be different from the dielectric constant of first dielectric layer 131a of first chip antenna 100a.

[0090] That is, the first frequency band of first chip antenna 100a and the second frequency band of second chip antennas 400a, 400b may be different from each other. As a result, high frequency package 200i according to an embodiment of the present invention may remotely transmit and receive first and second RF signals belonging to a plurality of different frequency bands.

[0091] Since the first chip antenna 100a can be positioned lower than the second chip antennas 400a, 400b, the electromagnetic interference between the first chip antenna 100a and the second chip antennas 400a, 400b can be reduced, and therefore the high frequency package 200i according to one embodiment of the present invention can improve the overall gain of multiple different frequency bands.

[0092] Furthermore, the high frequency package 200i according to one embodiment of the present invention can remotely transmit and receive first and second RF signals belonging to multiple different frequency bands while using the first chip antenna 100a and the second chip antenna 400a, 400b, each of which is realized to be concentrated in one frequency band, thereby improving the overall antenna performance (e.g., bandwidth, maximum output, polarization efficiency, etc.) of multiple different frequency bands.

[0093] 4a and 4b are diagrams illustrating a top view of a high frequency package according to an embodiment of the present invention in which a second connecting member is omitted.

[0094] Referring to FIG. 4a, a high frequency package 200k according to one embodiment of the present invention may include a plurality of first chip antennas 100k, and may have a structure in which the plurality of first chip antennas 100k are respectively arranged in a plurality of through holes of a core insulating layer 231a.

[0095] For example, the patch antenna pattern 110c, the first dielectric layer 131c, and the through-hole may each have a polygonal shape.

[0096] The patch antenna pattern 110c may be disposed obliquely with respect to the outer side surface of the mutant core insulating layer 231a of the patch antenna pattern 110c. For example, the patch antenna pattern 110c may have a shape rotated 45 degrees in the XY plane.

[0097] The surface current caused by remote transmission and reception of RF signals of the patch antenna pattern 110c can flow from one side to the other side, and the electric field corresponding to the surface current can be in the same direction as the surface current, and the magnetic field corresponding to the surface current can be perpendicular to the surface current.

[0098] When patch antenna pattern 110c is oblique to the outer side surface of variant core insulating layer 231a, the electric field and magnetic field corresponding to the surface current can be formed to avoid the adjacent chip antennas, thereby reducing the electromagnetic interference caused by the electric field and magnetic field corresponding to the surface current to the adjacent chip antennas, thereby improving the overall gain of the plurality of first chip antennas 100k.

[0099] Referring to FIG. 4b, a high frequency package 200l according to one embodiment of the present invention may include a plurality of first chip antennas 100l, and the plurality of patch antenna patterns 110d, 110e of the plurality of first chip antennas 100l may be polygonal and / or circular.

[0100] For example, a plurality of first chip antennas 100l can be manufactured by cutting a relatively large dielectric layer in the vertical direction in a state in which a plurality of patch antenna patterns 110d, 110e are formed on the relatively large dielectric layer.

[0101] 5a to 5f are diagrams illustrating a method for manufacturing a high frequency package according to one embodiment of the present invention.

[0102] Referring to FIG. 5 a , the high frequency package in a first state 1201 may have a structure in which copper clad 1239 is laminated on the upper and lower surfaces of a core insulating layer 1231 .

[0103] The high frequency package in the second state 1202 may have a structure in which the copper foil is removed from the core insulating layer 1231 and through holes and via holes are formed.

[0104] The high frequency package in the third state 1203 may have a structure in which a dry film 1238 is formed on the upper surface and / or the lower surface of the core insulating layer 1231 .

[0105] 5b, the high frequency package in the fourth state 1204 may have a structure in which a core via 1233 is formed in a via hole of the core insulating layer 1231, a core insulating layer 1232 is formed on an upper surface and / or a lower surface of the core insulating layer 1231, and a plating member 1235 is formed on a boundary surface of the through hole of the core insulating layer 1231. The above structure corresponds to the core member 1230 and can be a support base for building up the first and second connecting members 1210 and 1220.

[0106] The high frequency package in the fifth state 1205 may have a structure in which a support film 1237 is disposed on the lower surface of the core member 1230 .

[0107] The high frequency package in the sixth state 1206 may have a structure in which the first chip antenna 1100 is disposed in the through hole of the core member 1230, and may undergo a plasma cleaning process. The first chip antenna 1100 may be disposed on the upper surface of the support film 1237 in a state in which the patch antenna pattern 1110, the power supply via 1120, the first dielectric layer 1131, and the electrical connection structure 1160 are combined.

[0108] Referring to FIG. 5 c , the high frequency package in the seventh state 1207 may have a structure in which an insulating member 1240 is filled in the through holes of the core member 1230 and on the upper surface of the core member 1230 .

[0109] The RF package in the eighth state 1208 may have a structure in which the support film has been removed, and may undergo a plasma cleaning process.

[0110] The high frequency package in the ninth state 1209 may have a structure in which the insulating member 1240 extends onto the lower surface of the core member 1230 .

[0111] Referring to FIG. 5 d , the high frequency package in the tenth state 1210 may have a structure in which via holes are formed on the upper and lower surfaces of the insulating member 1240 .

[0112] The high-frequency package in the 11th state 1211 may have a structure in which first and second vias 1213, 1223 are formed in the via holes of the insulating member 1240, and first and second wiring layers 1212, 1222 are formed on the upper and lower surfaces of the insulating member 1240, and may undergo a surface treatment process.

[0113] The high frequency package in the twelfth state 1212 may have a structure in which a coupling patch pattern 1225 is formed on the upper surface of an insulating member 1240 .

[0114] Referring to FIG. 5e, the high frequency package in the thirteenth state 1213 may have a structure in which first and second insulating layers 1211 and 1221 are formed on the upper and lower surfaces of an insulating member 1240.

[0115] The high frequency package in the fourteenth state 1214 may have a structure in which via holes are formed in the first and second insulating layers 1211 and 1221 .

[0116] The high frequency package in the fifteenth state 1215 may have a structure in which first and second wiring layers 1212 and 1222 are formed on the upper and lower surfaces of first and second insulating layers 1211 and 1221 .

[0117] The process from the high-frequency package in the 13th state 1213 to the high-frequency package in the 15th state 1215 can be repeated, and the number of layers of the first and second insulating layers 1211, 1221 and the first and second wiring layers 1212, 1222 can be determined according to the number of times the above process is repeated.

[0118] Referring to FIG. 5f, the high frequency package in the sixteenth state 1216 may have a structure in which the overlapping portion of the coupling patch pattern 1225 in the second insulating layer 1221 is removed.

[0119] The high frequency package in the seventeenth state 1217 may have a structure in which first and second SR layers 1214, 1224 are formed, and an overlapping region 1228 of the coupling patch pattern 1225 may be removed from the second SR layer 1224. For example, the overlapping region 1228 may be removed by a method involving the collision of fine particles (e.g., a blast method) or a method involving laser irradiation.

[0120] 6a and 6b are diagrams illustrating a connection structure of a first connection member of a high frequency package according to an embodiment of the present invention.

[0121] Referring to FIG. 6 a , a radio frequency package 200 l according to an embodiment of the present invention may further include an RFIC 310 and a sub-substrate 370 .

[0122] A radio frequency integrated circuit (RFIC) 310 may be disposed on the lower surface of the first connection member 210a and may be mounted via an electrical connection structure 333 for mounting.

[0123] The RFIC 310 can process the RF signal remotely transmitted and received at the first chip antenna 100a and the base signal having a lower frequency than the RF signal. For example, the signal processing can include frequency conversion, filtering, amplification, and phase control.

[0124] The sub-substrate 370 may be disposed on the lower surface of the first connection member 210a to surround the RFIC 310, and may be mounted via the mounting electrical connection structure 334.

[0125] For example, the sub-substrate 370 may include a sub-insulation layer 371, a sub-wiring layer 372, and a sub-via 373, and may act as the base signal path or power supply path.

[0126] For example, at least a portion of the space where the sub-substrate 370 surrounds the RFIC 310 may be filled with a sealing material such as a photo imageable encapsulant (PIE), an Ajinomoto build-up film (ABF), or an epoxy molding compound (EMC).

[0127] 6b, the high frequency package 200m according to an embodiment of the present invention may be mounted on a base substrate 380 via a mounting electrical connection structure 335. The base substrate 380 may be a printed circuit board and may include a transmission path for a base signal.

[0128] FIG. 7 is a plan view illustrating an example of the arrangement of a substrate on which chip antennas are arranged in an electronic device according to an embodiment of the present invention.

[0129] Referring to FIG. 7, high frequency packages 100a-1 and 100a-2 according to an embodiment of the present invention may be disposed adjacent to different ends of an electronic device 700, respectively.

[0130] The electronic device 700 may be, but is not limited to, a smart phone, a personal digital assistant, a digital video camera, a digital still camera, a network system, a computer, a monitor, a tablet, a laptop, a netbook, a television, a video game, a smart watch, an automotive, or the like.

[0131] The electronic device 700 may include a base substrate 600, which may further include a communication modem 610 and a baseband IC 620.

[0132] The communications modem 610 may include at least some of the following to perform digital signal processing: memory chips such as volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, etc.; application processor chips such as a central processor (e.g., CPU), graphics processor (e.g., GPU), digital signal processor, encryption processor, microprocessor, microcontroller, etc.; and logic chips such as an analog-to-digital converter, ASIC (application-specific IC), etc.

[0133] The baseband IC 620 may generate a base signal by performing analog-to-digital conversion, amplification, filtering, and frequency conversion on the analog signal. The base signal input / output from the baseband IC 620 may be transmitted to the high frequency packages 100a-1 and 100a-2 via a coaxial cable, and the coaxial cable may be electrically connected to the electrical connection structure of the high frequency packages 100a-1 and 100a-2.

[0134] For example, the frequency of the base signal may be a baseband, and may be a frequency (e.g., several GHz) corresponding to an intermediate frequency (IF). The frequency of the RF signal (e.g., 28 GHz, 39 GHz) may be higher than the IF and may correspond to a millimeter wave (mmWave).

[0135] On the other hand, RF signals in the present invention include, but are not limited to, Wi-Fi (e.g., IEEE 802.11 family), WiMAX (e.g., IEEE 802.16 family), IEEE 802.20, LTE (long term evolution), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPS, GPRS, CDMA, TDMA, DECT, Bluetooth, 3G, 4G, 5G, and any other wireless and wired protocols designated thereafter.

[0136] Although one embodiment of the present invention has been described above, a person having ordinary knowledge in the technical field can modify and change the present invention in various ways by adding, changing, or deleting components without departing from the concept of the present invention described in the claims, and this can also be said to be within the scope of the rights of the present invention. [Explanation of symbols]

[0137] 100a, 100b Chip antenna 110a Patch antenna pattern 120a feed via 131a first dielectric layer 160a Electrical connection structure 200a high frequency package 210a first connecting member 211a at least one first insulating layer 212a at least one first wiring layer 213a 1st via 214a 1st SR (solder resist) layer 221a at least one second insulating layer 222a At least one second wiring layer 223a 2nd via 224a 2nd SR layer 225a Coupling patch pattern 231a Core insulation layer 232a Core wiring layer 233a Corevia 235a Plating materials 240a Insulating material

Claims

1. a first connecting member having a first laminated structure in which at least one first insulating layer and at least one first wiring layer are alternately laminated; a second connecting member having a second laminated structure in which at least one second insulating layer and at least one second wiring layer are alternately laminated; a core member including a core insulating layer and disposed between the first connecting member and the second connecting member; a first chip antenna disposed so as to be surrounded by the core insulating layer; Including, The first chip antenna includes: a first dielectric layer disposed so as to be surrounded by the core insulating layer; a patch antenna pattern disposed on an upper surface of the first dielectric layer; a power supply via disposed to penetrate at least a portion of the first dielectric layer in a thickness direction, providing a power supply path for the patch antenna pattern, and electrically connected to the at least one first wiring layer; a core member having a through hole penetrating at least a portion of the core insulating layer, the first chip antenna being disposed in the through hole and spaced apart from the core insulating layer;

2. an electrical connection structure on the first connection member for connecting the power supply via and the at least one first wiring layer; The high frequency package of claim 1 , wherein the electrical interconnect structure is made of the same material as the at least one first wiring layer.

3. The high frequency package according to claim 1 , wherein the second connecting member has an aperture in a region overlapping at least a portion of the patch antenna pattern.

4. A first connecting member having a first laminated structure in which at least one first insulating layer and at least one first wiring layer are alternately laminated; a second connecting member having a second laminated structure in which at least one second insulating layer and at least one second wiring layer are alternately laminated; a core member including a core insulating layer and disposed between the first connecting member and the second connecting member; a first chip antenna disposed so as to be surrounded by the core insulating layer; Including, The first chip antenna includes: a first dielectric layer disposed so as to be surrounded by the core insulating layer; a patch antenna pattern disposed on an upper surface of the first dielectric layer; a power supply via disposed to penetrate at least a portion of the first dielectric layer in a thickness direction, providing a power supply path for the patch antenna pattern, and electrically connected to the at least one first wiring layer; A high frequency package, wherein the second connecting member has an aperture in a region overlapping at least a portion of the patch antenna pattern.

5. the second connecting member further includes an SR layer disposed on an upper surface of the second laminate structure; The high frequency package according to claim 1 , wherein the SR layer further includes a hole overlapping at least a portion of the patch antenna pattern.

6. A first connecting member having a first laminated structure in which at least one first insulating layer and at least one first wiring layer are alternately laminated; a second connecting member having a second laminated structure in which at least one second insulating layer and at least one second wiring layer are alternately laminated; a core member including a core insulating layer and disposed between the first connecting member and the second connecting member; a first chip antenna disposed so as to be surrounded by the core insulating layer; Including, The first chip antenna includes: a first dielectric layer disposed so as to be surrounded by the core insulating layer; a patch antenna pattern disposed on an upper surface of the first dielectric layer; a power supply via disposed to penetrate at least a portion of the first dielectric layer in a thickness direction, providing a power supply path for the patch antenna pattern, and electrically connected to the at least one first wiring layer; the second connecting member further includes an SR layer disposed on an upper surface of the second laminate structure; The SR layer further includes a hole overlapping at least a portion of the patch antenna pattern.

7. The high frequency package according to claim 1 , wherein the at least one second wiring layer includes a coupling patch pattern arranged to overlap the patch antenna pattern.

8. The high frequency package of claim 7 , further comprising a connection via electrically connecting the coupling patch pattern and the first chip antenna.

9. A high frequency package, comprising: a first connecting member having a first laminated structure in which at least one first insulating layer and at least one first wiring layer are alternately laminated; a second connecting member having a second laminated structure in which at least one second insulating layer and at least one second wiring layer are alternately laminated; a core member including a core insulating layer and disposed between the first connecting member and the second connecting member; a first chip antenna disposed so as to be surrounded by the core insulating layer; Including, The first chip antenna includes: a first dielectric layer disposed so as to be surrounded by the core insulating layer; a patch antenna pattern disposed on an upper surface of the first dielectric layer; a power supply via disposed to penetrate at least a portion of the first dielectric layer in a thickness direction, providing a power supply path for the patch antenna pattern, and electrically connected to the at least one first wiring layer; the at least one second wiring layer includes a coupling patch pattern arranged to overlap the patch antenna pattern, The RF package further includes a connecting via electrically connecting the coupling patch pattern and the first chip antenna.

10. The high frequency package according to claim 1 , further comprising a plating member disposed on a side surface of the core insulating layer in a direction facing the first chip antenna.

11. The high frequency package according to claim 1 , further comprising an insulating member arranged to fill at least a portion of a space surrounded by the core insulating layer.

12. A high frequency package as described in any one of claims 1 to 3, further comprising an insulating member surrounding the first dielectric layer and positioned to fill at least a portion of the through holes penetrating the core insulating layer.

13. A high frequency package, comprising: a first connecting member having a first laminated structure in which at least one first insulating layer and at least one first wiring layer are alternately laminated; a second connecting member having a second laminated structure in which at least one second insulating layer and at least one second wiring layer are alternately laminated; a core member including a core insulating layer and disposed between the first connecting member and the second connecting member; a first chip antenna disposed so as to be surrounded by the core insulating layer; Including, The first chip antenna includes: a first dielectric layer disposed so as to be surrounded by the core insulating layer; a patch antenna pattern disposed on an upper surface of the first dielectric layer; a power supply via disposed to penetrate at least a portion of the first dielectric layer in a thickness direction, providing a power supply path for the patch antenna pattern, and electrically connected to the at least one first wiring layer; The high frequency package includes: further comprising an insulating member surrounding the first dielectric layer; The core insulating layer surrounds the insulating member.

14. 14. The high frequency package according to claim 1, wherein the thickness of the core insulation layer is thicker than the thickness of one of the at least one first insulation layer and thicker than the thickness of one of the at least one second insulation layer.

15. 15. The high-frequency package according to claim 1, wherein the core member further includes a core via that penetrates the core insulating layer and electrically connects between the at least one first wiring layer and the at least one second wiring layer.

16. The high frequency package of claim 15 , further comprising a second chip antenna disposed on an upper surface of the second connection member and electrically connected to the at least one second wiring layer.

17. A high frequency package comprising: a first connecting member having a first laminated structure in which at least one first insulating layer and at least one first wiring layer are alternately laminated; a second connecting member having a second laminated structure in which at least one second insulating layer and at least one second wiring layer are alternately laminated; a core member including a core insulating layer and disposed between the first connecting member and the second connecting member; a first chip antenna disposed so as to be surrounded by the core insulating layer; Including, The first chip antenna includes: a first dielectric layer disposed so as to be surrounded by the core insulating layer; a patch antenna pattern disposed on an upper surface of the first dielectric layer; a power supply via disposed to penetrate at least a portion of the first dielectric layer in a thickness direction, providing a power supply path for the patch antenna pattern, and electrically connected to the at least one first wiring layer; The high frequency package further includes a second chip antenna disposed on an upper surface of the second connecting member and electrically connected to the at least one second wiring layer.

18. The high frequency package according to claim 16 or 17, wherein a size of the patch antenna pattern of the second chip antenna and a size of the patch antenna pattern of the first chip antenna are different from each other.

19. 19. The high frequency package according to claim 16, wherein a dielectric constant of the dielectric layer of the second chip antenna is different from a dielectric constant of the first dielectric layer of the first chip antenna.

20. 20. The high frequency package of claim 15, further comprising an impedance element disposed on an upper surface of the second connection member and electrically connected to the at least one second wiring layer.

21. 21. The high frequency package according to claim 15, further comprising a connector disposed on an upper surface of the second connecting member and electrically connected to the at least one second wiring layer.

22. An RFIC disposed on a lower surface of the first connecting member; The high frequency package according to claim 1 , further comprising: a sub-substrate disposed on a lower surface of the first connecting member and surrounding the RFIC.

23. The high frequency package according to claim 1 , wherein the dielectric constant of the first dielectric layer is higher than the dielectric constant of the core insulating layer.

24. The first chip antenna includes:

24. The high frequency package according to claim 1, further comprising a second dielectric layer disposed on an upper surface of the patch antenna pattern and surrounded by the core insulating layer.

25. the at least one second wiring layer includes a coupling patch pattern arranged to overlap the patch antenna pattern, The high frequency package of claim 24 , wherein the first chip antenna further includes an upper patch pattern disposed on the upper surface of the second dielectric layer between the coupling patch pattern and the patch antenna pattern.

26. The first chip antenna includes:

26. The high frequency package according to claim 24, further comprising an adhesive layer disposed between the first dielectric layer and the second dielectric layer, the adhesive layer having higher adhesion than the first dielectric layer and the second dielectric layer.

27. 27. The high frequency package of claim 26, wherein the adhesive layer has an air cavity in which the patch antenna pattern is disposed.

28. 28. The high frequency package of claim 1, wherein the patch antenna pattern is disposed obliquely with respect to an outer side of the mutant core insulation layer of the patch antenna pattern.

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