Plasma Etching Method

Abstract

To provide a method of plasma-etching a structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate).SOLUTION: The method comprises the steps of: providing a structure comprising a semiconductor substrate and a layer of PZT; positioning the structure on a support 20 within a chamber 11; etching the structure by performing a first plasma etch step in which a first etch process gas mixture is supplied to the chamber 11, where the first etch process gas mixture comprises at least one fluorine-containing species, and where the first plasma etch step is performed such that involatile metal etch products are deposited on interior surfaces of the chamber 11; and further etching the structure by performing a second plasma etch step in which a second etch process gas mixture is supplied to the chamber 11.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a method of plasma etching, and in particular to a method of plasma etching a structure comprising a substrate and a layer of PZT (lead zirconate titanate). [Background technology]

[0002] Piezoelectric materials are used in a variety of industrial applications including sensors and actuator applications such as ultrasonic transducers, AFM actuators, and in microelectronics for the fabrication of non-volatile memory devices. One of the most common piezoelectric materials is PZT (lead zirconate titanate).

[0003] The fabrication of PZT-based piezoelectric devices typically involves plasma processing, including plasma etching. An undesirable side effect of the etching process is the accumulation of material inside the chamber. Once the material reaches a certain thickness, the chamber must be cleaned periodically to prevent material from flaking off the chamber walls and contaminating the system. This period is known as the mean time between cleanings (MTBC). A longer MTBC is desirable because it increases the productivity of the plasma tool.

[0004] Plasma etching of PZT layers presents unique challenges, especially on large wafer diameters (>150 mm) and highly open areas (>80%). PZT piezoelectric devices typically use noble metal electrodes such as Pt. The etch by-products are primarily non-volatile, leading to coating of the inside of the process chamber with a thin film rich in Pb, Zr, and Ti from the PZT and Pt from the electrodes, along with by-products of the process gases used during etching, such as carbon, fluorine, and oxygen. While the use of O2 batch cleaning and O2 interwafer cleaning can minimize carbon-based by-product deposition, the remaining by-products are non-volatile and therefore difficult to remove by dry etching. Beyond a certain thickness, variations in thin film stress within the deposited material can result in spalling of the deposited material. This is exacerbated by thermal gradients within the chamber, and / or thermal cycling during idle times, and / or the presence of poor adhesion points. The spalling causes an increase in the number of particles and defects on the processed wafer. It is then necessary to open the vacuum chamber to the environment and clean the interior of the chamber using wet / mechanical methods. This results in a shorter MTBC than is desired. In addition, spalling of material onto the electrostatic chuck (ESC) can disrupt the integrity of the clamping force applied by the ESC. This affects the heat transfer between the PZT containing structure and the ESC, resulting in non-uniform wafer cooling and a resultant deterioration in process performance. Ultimately, this results in an incomplete product. There are significant economic impacts associated with spalling as tool productivity is reduced, and furthermore, unexpected particle generation can adversely affect device yield. However, as the demand for PZT-based devices increases, there is an increasing need to improve the plasma etching process of materials to improve device yield and increase productivity of the etching system. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] U.S. Patent No. 6,071,828 [Patent Document 2] U.S. Patent No. 7,439,188 [Patent Document 3] U.S. Patent No. 6,770,567 [Patent Document 4] US Patent Application Publication No. 2007 / 0178698 Summary of the Invention [Problem to be solved by the invention]

[0006] The present invention, in at least some of its embodiments, addresses one or more of the above problems and needs. [Means for solving the problem]

[0007] According to one aspect of the invention, there is provided a method of plasma etching a structure comprising a substrate and a layer of PZT (lead zirconate titanate), the method comprising: Providing a structure comprising a substrate and a layer of PZT; placing the structure on a support within a chamber; Etching the structure by performing a first plasma etching step in which a first etching process gas mixture is supplied to the chamber, the first etching process gas mixture including at least one fluorine-containing species, and the first plasma etching step is performed to deposit non-volatile metal etch products on interior surfaces of the chamber; Further etching the structure by performing a second plasma etching step in which a second etching process gas mixture is supplied to the chamber, the second etching process gas mixture including at least one fluorocarbon species, and the second plasma etching step is performed such that a fluorocarbon polymer layer is deposited on the interior surfaces of the chamber overlaying the non-volatile metal etch products deposited in the first plasma etching step and providing a substrate onto which further non-volatile metal etch products are deposited.

[0008] According to a further aspect of the invention there is provided a plasma etching apparatus for plasma etching a structure comprising a substrate and a layer of PZT (lead zirconate titanate), the apparatus comprising: A chamber; a support located within the chamber, on which the structure may be placed; A plasma generating device; and a controller configured to control the apparatus to perform a two-step etch process including a first plasma etch step in which a first etch process gas mixture is supplied to the chamber, the first etch process gas mixture comprising at least one fluorine-containing species, and the first plasma etch step is performed to deposit non-volatile metal etch products on the interior surfaces of the chamber; and a second plasma etch step in which a second etch process gas mixture is supplied to the chamber, the second etch process gas mixture comprising at least one fluorocarbon species, and the second plasma etch step is performed to deposit a fluorocarbon polymer layer on the interior surfaces of the chamber overlying the non-volatile metal etch products deposited in the first plasma etch step and providing a substrate onto which further non-volatile metal etch products may be deposited.

[0009] The inventors have found that the presence of a fluorocarbon polymer layer between layers of deposited non-volatile metal etch products improves adhesion of the metal etch products to the chamber interior, thereby preventing spalling of the deposited material, thus increasing the number of wafers that can be processed before the equipment must be cleaned.

[0010] An advantage of the present invention is that the fluorocarbon polymer layer is deposited during the etching process. No pre-wafer treatment or dummy wafers are required. Also, thin film structures may be obtained with it, maximizing wafer throughput. Thin film structures may be created when several PZT-containing structures are etched in succession by the two-step etching process of the present invention. The fluorocarbon polymer layer deposited during the second plasma etching step acts as a favorable substrate for the deposition of non-volatile metal etch products during the subsequent first plasma etching step (performed whether on structures processed in succession or on the same structure if a cyclic process is used). This increases the adhesion between the deposited metal layers. A stable layer structure with many layers is thus created, resulting in an increase in MTBC.

[0011] When reference is made to "non-limiting" terms such as "comprising," "comprises," and "comprising" with respect to the first and second etching process gas mixtures, it is understood that the invention also relates to embodiments in which the non-limiting terms are replaced with "limiting" terms such as "consisting of" and "consisting essentially of."

[0012] At least one fluorocarbon species of the second etching process gas mixture may include C4F8, which may be introduced into the chamber at a flow rate of 5-10 sccm.

[0013] Alternatively or additionally, the at least one fluorocarbon species of the second etching process gas mixture may include CF4 and / or C3F8. The at least one fluorocarbon species of the second etching process gas mixture may include CF4 and the second etching process gas mixture may further include H2. The ratio of CF4 to H2, expressed as a ratio of flow rates in sccm, may be less than 1.0:1.

[0014] The at least one fluorine-containing species of the first etching process gas mixture may include one or more of CF4, CHF3, C4F8, C3F8, and SF6. The first etching process gas mixture may further include H2. The first etching process gas mixture may include CF4 and H2. The ratio of CF4 to H2, expressed as a ratio of flow rates in sccm, may be 1.5:1 or greater.

[0015] The first etch process gas mixture may consist essentially of CF4, H2, and optionally one or more inert diluents, such as Ar.

[0016] The second etch process gas mixture may consist essentially of C4F8, CF4, H2, and optionally one or more inert diluents, such as Ar.

[0017] A bias power may be applied to the support during the first plasma etching step and a reduced or zero bias power may be applied to the support during the second plasma etching step. The bias power may be RF bias power. A bias power of 500-1000 W may be applied to the support during the first plasma etching step. A bias power of 0-500 W may be applied to the support during the second plasma etching step. The bias power controls the rate at which the structure is etched by the plasma. The bias power is adjusted during the first step to etch the structure at a high rate with low selectivity to the PZT. A lower bias power in the second step results in selective etching of the PZT surface. The plasma etching apparatus may comprise a power application arrangement for applying a bias power, such as an RF bias power, to the support.

[0018] The structure may be plasma etched using a single first plasma etch step and a single second plasma etch step. Alternatively, the structure can be etched in a cyclical manner by alternating the first and second plasma etch steps a desired number of times. Thus, the method includes the steps of etching the structure even further by performing a first plasma etch step, and etching the structure even further by performing a second plasma etch step.

[0019] The interior surfaces of the chamber may be textured prior to the start of etching the series of structures to improve adhesion of the initial layer of non-volatile metal etch products to the interior surfaces.

[0020] The layer of PZT may be separated from the substrate by one or more layers of another material. The layer of PZT may comprise a bottom surface. The bottom surface may be separated from the substrate by an electrode layer, such as a noble metal layer, e.g. Pt. Additionally or alternatively, the layer of PZT may be separated from the semiconductor substrate by a barrier layer, such as SiO2. The layer of PZT may comprise a top surface. An electrode layer, such as a layer of Pt or another noble metal, may be present on the top surface. The structure may further comprise a photoresist layer or another masking material. The substrate may be a semiconductor substrate, such as a silicon substrate.

[0021] In some embodiments, the chamber has a first gas inlet array comprising one or more gas inlets and a second gas inlet array comprising one or more gas inlets. During a first plasma etching step, a first etching process gas mixture is only supplied to the chamber through the first gas inlet array. During a second plasma etching step, a second etching process gas mixture is only supplied to the chamber through the second gas inlet array. Thus, the controller may be configured to control the first and second gas inlet arrays, whereby a structure is etched by performing a first plasma etching step with the first etching process gas mixture only supplied to the chamber through the first gas inlet array, and further etched by performing a second plasma etching step with the second etching process gas mixture only supplied to the chamber through the second gas inlet array.

[0022] Thus, a two-step PZT etch process includes switching gas inlets to extend the average time between chamber cleans. The belief is that a higher concentration of precursor gas around the gas inlets leads to increased deposition around the gas inlets. By utilizing a two-step etch process with switching gas inlets, the present invention provides greater uniformity in the chamber deposition, thereby further extending the MTBC.

[0023] The gas inlets of the first gas inlet array may be located radially inward of the gas inlets of the second gas inlet array, or vice versa. The chamber may further comprise a plasma generating device. The plasma generating device may separate the gas inlets of the first gas inlet array from the gas inlets of the second gas inlet array.

[0024] The plasma generating device may comprise an annular housing and a plasma generating element disposed within the annular housing. The gas inlets of the first gas inlet arrangement may be located radially inside the annular housing and the gas inlets of the second gas inlet arrangement may be located radially outside the annular housing, or vice versa. The plasma generating element may be an RF antenna. The annular housing may be formed from a ceramic material.

[0025] The first and second gas inlet arrays may each comprise any suitable number of gas inlets. In principle the first and / or second gas inlet array may have a single gas inlet, although in practice it is more likely that each gas array will have multiple gas inlets.

[0026] Generally, the first and second plasma etching steps use different etching process gas mixtures. Typically, the non-volatile metal etch products include Pb, Zr, and Ti from the PZT and the metal (such as Pt) from the electrode, although the relative proportions may vary based on the process conditions used. It is understood that the fluorocarbon polymer layer may contain other components, such as specific proportions of the non-volatile metal etch products.

[0027] The substrate may be in the form of a wafer. When the substrate is a semiconductor substrate, it is typically in the form of a wafer.

[0028] Different types of plasma generating devices suitable for plasma etching are known to those skilled in the art, and the present invention may be used in conjunction with a variety of these plasma generating devices.

[0029] Although the present invention has been described above, it extends to any inventive combination of the features set forth above or in the following description. For example, a feature described in relation to one aspect of the invention is disclosed in relation to another aspect of the invention. Although exemplary embodiments of the present invention are described in detail herein with reference to the accompanying drawings, it should be understood that the present invention is not limited to these exact embodiments. It is further contemplated that specific features described either individually or as part of an embodiment may be combined with other individually described features or parts of other embodiments, even if the other features and embodiments make no reference to the specific feature. Thus, the present invention extends to such specific combinations not yet described. [Brief description of the drawings]

[0030] The invention will now be described, by way of example only, with reference to the accompanying drawings in which:

[0031] [Figure 1] 1 is a schematic diagram of a plasma etching apparatus according to the present invention; [Diagram 2] 1 is a schematic diagram of a plasma etching apparatus according to the present invention; [Diagram 3] Deposition at the RF source window is depicted and Figures 4 and 5 show the corresponding areas. [Figure 4] 4 is a SEM micrograph of the cross section of the good bond shown in FIG. 3. [Diagram 5] 4 is a SEM micrograph of the cross section of the failed bond shown in FIG. 3. [Figure 6] 1 depicts an EDX compositional analysis for a deposited material layer. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0032] A plasma processing apparatus according to the present invention is shown in Figures 1 and 2. The present invention may be implemented in an adapted version on Applicant's Omega® Synapse™ Etch Process Module. Well known features such as exhaust gas pumping systems are not shown in Figures 1 and 2, but will be well understood by those skilled in the art.

[0033] The apparatus includes a plasma etch chamber 11 having a plurality of internal surfaces. The apparatus includes a first gas inlet array 10, a second gas inlet array 12, a ceramic annular housing 18, an RF antenna 14, a platen RF electrode 16, and a support 20 for supporting a structure 28 to be etched. In the embodiment shown in Figures 1 and 2, the support 20 is an electrostatic chuck and the platen RF electrode 16 is used to control the directionality of the etching ions, which in turn controls the extent of physical etching achieved during processing. Higher platen power increases the substrate etch rate.

[0034] The plasma etch chamber 11 has an upper wall or lid. An annular housing 18 is submerged within the chamber 11 and depends downwardly from the upper wall. The annular housing 18 defines a circular area within the upper wall.

[0035] In the embodiment shown in Figures 1 and 2, the first gas inlet array 10 is an inner gas plenum and the second gas inlet array 12 is an outer gas plenum. Each gas inlet array includes a plurality of gas inlets, each terminating in an opening through which process gas enters the interior of the chamber 11. The inner plenum 10 is located within a circular area defined by an annular housing 18. The gas inlets of the inner gas plenum 10 are located inside the annular housing 18 as a plurality of openings arranged in a circular pattern. The outer plenum 12 is located outside the circular area defined by the annular housing 18. The gas inlets of the outer gas plenum 12 are located outside the annular housing 18 as a plurality of openings arranged in a circular pattern. The inner gas plenum may have eight gas inlets, while the outer gas plenum may have approximately ten times as many gas inlets. However, it will be appreciated that the first and second gas inlet arrays may have any suitable number of gas inlets.

[0036] The etching chamber is further shown in FIG. 2, which illustrates the processing of a structure 28 present within the chamber. The chamber comprises chamber walls 24 within which the structure 28 rests on a support 20. A plasma 26 is ignited and maintained by RF power coupled into the chamber from an RF power source (not shown) via an RF antenna 14 mounted within an annular housing 18. The annular housing 18 acts as a window allowing RF power to be coupled into the chamber. Etch process gases enter the chamber through gas inlets in either the inner gas plenum 10 or the outer gas plenum 12. A controller 30 is used to control the two-step etch process. As part of its function, the controller 30 controls the flow of the etch process gases into the chamber. In some embodiments, the controller switches the gas inlet point from the first gas plenum to the second gas plenum between the first and second etch steps.

[0037] A typical wafer structure is a silicon substrate base layer, followed by a SiO2 layer, a platinum layer, a PZT layer, a second platinum layer, and finally a photoresist mask on the top surface of the wafer. The photoresist mask protects the wafer from the plasma etch. The mask is patterned according to the desired etch product. Typically, the platinum electrode layer has a thickness of 50-250 nm and the PZT layer has a thickness of 500-2500 nm.

[0038] During the first step, a relatively high platen power is used to etch the PZT at a high rate and with low selectivity down to the stopping layer (PZT / Pt). The stopping layer is typically a platinum electrode. The platen power is reduced in the second step and may be switched off completely. The reduction in platen power leads to a reduction in the etch rate for the PZT but improves the selectivity with the Pt. This means that during the second step the plasma continues to etch any remaining PZT but does not etch the stopping layer or removes the Pt at a substantially reduced rate.

[0039] The inner surface of the chamber is textured to improve adhesion of the first layer of deposited material. The metal shield in the chamber is coated with arc-sprayed Al to achieve a surface roughness of about 20-35 μm, while the ceramic window 18 is coated with yttria paint to achieve a surface roughness of about 6 μm. Testing was performed by etching a highly open area (80% OA) patterned wafer having a photoresist mask (4.5 μm thick) / Pt (100 nm thick) / PZT (2 μm thick) / Pt (100 nm thick) layer formed thereon using the process conditions shown in Table 1 for either the inner or outer gas plenum used to supply the etching process gases.

[0040] Typical process parameters for each step are shown in Table 1. The PZT etch is typically performed at a chamber temperature of 55° C. and a pressure of 5-50 mTorr.

[0041] [Table 1]

[0042] It was found that when the outer gas plenum was used to perform the etching step, deposition was evident on the chamber surfaces around the outer gas plenum. When the inner gas plenum was used to perform the etching step, deposition was visible on the annular housing and around the inner gas plenum. Over 214 microns of PZT was successfully etched using the inner plenum before the material delaminated from the ceramic window in the annular housing.

[0043] 3 depicts the material deposited on the annular housing 18. It can be seen that the material adheres well in some areas while delaminating in other areas.

[0044] The SEM micrograph shown in Figure 4 corresponds to the good adhesion area shown in Figure 3. A thick layer of fluorocarbon polymer is present between each layer of metallic etch products. As the number of wafers processed in the chamber increases, a layer structure of etch products and fluorocarbon polymer builds up inside the chamber.

[0045] In contrast, the SEM micrograph in FIG. 5 was taken from the poorly bonded area shown in FIG. In this region, the fluorocarbon layers between the etch product layers are thin or absent. SEM images show that the regions where a thick fluorocarbon polymer layer is present between each redeposited etch product layer have better adhesion than the regions where the fluorocarbon layer is thin or absent.

[0046] Figure 6 shows an EDX compositional analysis of the redeposited material taken from the good adhesion area. The composition of the material is consistent with the presence of a thick fluorocarbon layer sandwiched between layers of metal etch products as seen in Figure 4.

[0047] Without wishing to be limited by any particular theory or speculation, it is believed that there are two main mechanisms for deposition inside the chamber. The first is direct deposition of process gases on the chamber interior. The second is redeposition of etch products from the wafer during etching. It is believed that material deposition from the etch process gas mixture varies throughout the chamber due to local variations in precursor gas concentration as a function of distance from the gas inlet. This results in higher deposition around the gas inlet. By switching between the two gas inlet arrangements, more uniform deposition may be achieved, and therefore the time between chamber cleans may be extended. Deposition from wafer etch products is believed to operate in a linear distance fashion from the wafer, and therefore is not affected by the gas inlet. The invention described herein is primarily concerned with the deposition of a fluorocarbon polymer layer, which acts as an excellent substrate for the deposition of a subsequent layer of non-volatile metal products. This may be performed in conjunction with switching the gas inlets between the first and second plasma etch steps to achieve optimal results. However, it is not necessary that gas inlet switching be performed. Instead, it will be appreciated that an advantageous layer structure comprising alternating layers of non-volatile metal etch products and fluorocarbon polymers may be achieved without gas inlet switching.

[0048] It is contemplated that the thickness of the fluorocarbon thin film may be modified by variation of process parameters such as RF coupling, the temperature of the surface on which it is deposited, and local variations in the concentration of one or more fluorocarbon precursors used to provide the fluorocarbon polymer layer, etc. Such variations are within the purview of one of ordinary skill in the art.

Claims

1. 1. A method of plasma etching a structure comprising a substrate and a layer of PZT (lead zirconate titanate), comprising: Providing a structure comprising a substrate and a layer of PZT; placing the layer of PZT on a support within a chamber; Etching the layer of PZT by performing a first plasma etch step in which a first etch process gas mixture is supplied to the chamber, the first etch process gas mixture including at least one fluorine-containing species, and the first plasma etch step is performed to deposit non-volatile metal etch products on interior surfaces of the chamber; further etching the layer of PZT by performing a second plasma etch step in which a second etch process gas mixture is supplied to the chamber, the second etch process gas mixture including at least one fluorocarbon species, and the second plasma etch step is performed such that a fluorocarbon polymer layer is deposited on the interior surfaces of the chamber overlying non-volatile metal etch products deposited in the first plasma etch step and further non-volatile metal etch products are deposited on the fluorocarbon polymer layer; A method comprising:

2. The at least one fluorocarbon species of the second etching process gas mixture is ４ F ８ The method of claim 1 , comprising:

3. Said C ４ F ８ The method of claim 2, wherein is introduced into the chamber at a flow rate of 5 to 10 sccm.

4. The at least one fluorocarbon species of the second etching process gas mixture is CF ４ and / or C ３ F ８ The method according to any one of claims 1 to 3, comprising:

5. The at least one fluorocarbon species of the second etching process gas mixture is CF ４ and the second etching process gas mixture comprises H ２ and expressed as a ratio of flow rates in sccm, ４ H ２ The method of claim 4, wherein the ratio of

6. The at least one fluorine-containing species of the first etching process gas mixture is CF ４ , C.H.F. ３ , C ４ F ８ , C ３ F ８ , and S.F. ６ The method of any one of claims 1 to 3, comprising one or more of:

7. The first etching process gas mixture comprises H ２ The method of claim 6 further comprising:

8. The first etching process gas mixture comprises CF ４ and H ２ CF ４ H ２ The method of claim 7, wherein the ratio of is 1.5:1 or greater.

9. The first etching process gas mixture comprises CF ４ , H ２ and one or more inert diluents.

10. The second etching process gas mixture comprises ４ F ８ , C.F. ４ , H ２ and one or more inert diluents.

11. 11. The method of claim 1, wherein a bias power is applied to the structure during the first plasma etching step, and a reduced or zero bias power is applied to the structure during the second plasma etching step compared to during the first plasma etching step.

12. The method of claim 11, wherein a bias power of 500 to 1000 W is applied to the structure during the first plasma etching step.

13. The method of claim 11 or claim 12, wherein a bias power of 0 to 500 W is applied to the structure during the second plasma etching step.

14. The method according to any one of claims 1 to 13, wherein the substrate is a semiconductor substrate.

15. The method of claim 14 , wherein the semiconductor substrate is a silicon substrate.

16. the chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets; during the first plasma etching step, the first etching process gas mixture is simply supplied to the chamber through the first gas inlet arrangement; During the second plasma etching step, the second etching process gas mixture is simply supplied to the chamber through the second gas inlet arrangement. The method according to any one of claims 1 to 15.

17. 1. A plasma etching apparatus for plasma etching a structure comprising a substrate and a layer of PZT (lead zirconate titanate), comprising: A chamber; a support located within the chamber on which the structure is disposed; A plasma generating device; a controller configured to control the apparatus to perform a two-step etch process, the two-step etch process including a first plasma etch step in which a first etch process gas mixture is supplied into the chamber, the first etch process gas mixture comprising at least one fluorine-containing species, and the first plasma etch step is performed to deposit non-volatile metal etch products on an interior surface of the chamber; and a second plasma etch step in which a second etch process gas mixture is supplied into the chamber, the second etch process gas mixture comprising at least one fluorocarbon species, and the second plasma etch step is performed to deposit a fluorocarbon polymer layer on the interior surface of the chamber overlying the non-volatile metal etch products deposited in the first plasma etch step, and further non-volatile metal etch products are deposited on the fluorocarbon polymer layer; A plasma etching apparatus comprising:

Images