Substrate Processing Equipment

Abstract

To provide a substrate processing apparatus that prevents floating droplets or the like from adhering to a substrate.SOLUTION: A substrate processing apparatus includes a substrate holding unit that holds a substrate, a rotation unit as a rotation driving unit that rotates the substrate, a cup 31 disposed so as to surround the substrate and having an upper end positioned above the substrate, a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holding unit, an exhaust unit that exhausts the inside of the cup 31, and includes an exhaust pipe 33 as an exhaust flow path connected to the lower side of the cup 31, and an opening / closing unit 35 for opening and closing the exhaust flow path, a gas supply unit 60 that supplies inert gas outward from the outer periphery of the substrate so as to form an annular airflow layer AC so as to surround the substrate outside from the periphery of the substrate from a gas discharge nozzle 66 provided in the vicinity of the upper end of the cup 31, and a control device as a control unit that controls the processing liquid supply unit, the opening / closing unit 35, and the gas supply unit 60.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 describes a method in which a developer is supplied to a rotating substrate, and then the rotation of the substrate is decelerated to form a pool of the developer on the substrate, thereby developing the resist. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Publication No. 07-263302 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for preventing liquid droplets and the like floating within an apparatus from adhering to a substrate. [Means for solving the problem]

[0005] a control unit that controls the processing liquid supply unit, the opening / closing unit, and the gas supply unit. The processing liquid supply unit includes a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holding unit, an exhaust flow path connected to the bottom of the cup, and an opening / closing unit that opens and closes the exhaust flow path, and an exhaust unit that exhausts air from inside the cup, a gas supply unit that supplies an inert gas from an exhaust nozzle provided near the top end of the cup, toward the outside of the outer periphery of the substrate so that a ring-shaped air flow layer is formed inside the cup outward from the outer periphery of the substrate so as to surround the substrate, and a control unit that controls the processing liquid supply unit, the opening / closing unit, and the gas supply unit. Effect of the Invention

[0006] According to the present disclosure, a technique is provided for preventing liquid droplets and the like floating within an apparatus from adhering to a substrate. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view showing an example of a substrate processing system. [Diagram 2] FIG. 2 is a side view that illustrates an example of the inside of the substrate processing system. [Diagram 3] FIG. 3 is a top view that illustrates an example of the inside of the substrate processing system. [Figure 4] FIG. 4 is a schematic diagram showing an example of the liquid processing unit. [Diagram 5] FIG. 5 is a top view illustrating an example of the liquid processing unit. [Figure 6] FIG. 6 is a schematic diagram showing an example of the configuration of a gas supply section and its periphery of the liquid processing unit. [Figure 7] FIG. 7 is a top view showing an example of the configuration of a cup portion including a gas supply pipe of a liquid processing unit and its surroundings. [Figure 8] 8(a), 8(b), and 8(c) are schematic diagrams showing examples of the shape of the gas supply pipe. [Figure 9] FIG. 9 is a schematic diagram showing an example of the state of gas discharged from a gas supply pipe. [Figure 10] FIG. 10 is a block diagram illustrating an example of a functional configuration of the control device. [Figure 11] FIG. 11 is a block diagram illustrating an example of a hardware configuration of the control device. [Figure 12] FIG. 12 is a flowchart showing an example of an operation procedure in the liquid processing unit. [Figure 13] FIG. 13 is a flow chart showing an example of states of the processing liquid and exhaust gas in accordance with an operation procedure in the liquid processing unit. [Figure 14] FIG. 14 is a schematic diagram showing an example of a modified gas supply pipe of the liquid processing unit. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments are described below.

[0009] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a substrate holding unit that holds a substrate, a rotation drive unit that rotates the substrate held in the substrate holding unit, a cup arranged to surround the substrate held in the substrate holding unit and whose upper end is located higher than the substrate, a processing liquid supply unit that supplies a processing liquid to the substrate held in the substrate holding unit, an exhaust flow path connected to the underside of the cup, and an opening / closing unit that opens and closes the exhaust flow path, and has an exhaust unit that exhausts air from inside the cup, a gas supply unit that supplies an inert gas from an exhaust nozzle provided near the upper end of the cup outward from the outer periphery of the substrate so that a ring-shaped air flow layer is formed inside the cup outward from the outer periphery of the substrate, and a control unit that controls the processing liquid supply unit, the opening / closing unit, and the gas supply unit.

[0010] According to the above-mentioned substrate processing apparatus, an annular airflow layer is formed in the cup so as to surround the substrate outward from the outer periphery of the substrate by supplying an inert gas from the exhaust nozzle of the gas supply unit, thereby preventing liquid particles floating in the cup from moving toward the substrate and adhering to the substrate.

[0011] The control unit may control the gas supply unit to supply the inert gas from the exhaust nozzle after switching the opening / closing unit from an open state to a closed state.

[0012] When the opening / closing unit that opens and closes the exhaust flow path of the substrate processing apparatus is closed, exhaust from within the cup stops, which can lead to a state in which liquid droplets are likely to float within the cup. By configuring the apparatus to supply gas after switching to the closed state, even if liquid droplets float within the cup, they are prevented from adhering to the substrate.

[0013] The control unit may be configured to switch the opening / closing unit from an open state to a closed state after the processing liquid supply unit supplies the processing liquid to the substrate rotated by the rotation drive unit to form a liquid film of the processing liquid on the substrate.

[0014] When a liquid film is formed on a substrate, if liquid droplets adhere to the liquid film on the substrate, the liquid processing using the liquid film may not be performed properly. In response to this, the adhesion of liquid droplets to the liquid film can be prevented by forming an annular airflow layer after the liquid film is formed.

[0015] The apparatus may further include a rinsing liquid supply unit that supplies a rinsing liquid to the substrate held by the substrate holding unit, and the control unit may switch the opening / closing unit from an open state to a closed state after the rinsing liquid supply unit supplies the rinsing liquid to the substrate and the rotation drive unit rotates the substrate.

[0016] As described above, if liquid droplets adhere to the surface of the substrate after the rinsing liquid is supplied and the substrate is rotated, the substrate surface may be contaminated by the liquid droplets, which may affect the subsequent processing. In response to this, by forming an annular airflow layer as described above, it is possible to prevent the adhesion of liquid droplets to the substrate surface after the rinsing liquid is supplied.

[0017] The processing liquid supply unit may include a nozzle that ejects the processing liquid onto the substrate and a standby unit for keeping the nozzle on standby, and the gas supply unit may include a gas supply source, a gas piping that connects the gas supply source and the exhaust nozzle, and a gas inlet port that can suck gas from the standby unit toward the gas piping.

[0018] With the above configuration, when droplets originating from the processing liquid float near the waiting section where the nozzle for discharging the processing liquid is kept waiting, the droplets around the waiting section can be sucked from the gas intake port toward the gas pipe by utilizing the gas supply from the gas supply section, which makes it possible to prevent the droplets from floating around the waiting section and further prevent the droplets from adhering to the substrate.

[0019] The gas supply unit may further include a branch pipe, which is located between the gas inlet port and the exhaust nozzle in the gas piping and which branches off from the piping and is capable of exhausting the gas in the piping.

[0020] In the case where the branch pipe is provided as described above, for example, the inert gas can be discharged to the outside without being supplied to the discharge nozzle that supplies gas into the cup using the branch pipe, and therefore the timing of the process of removing the liquid droplets from the waiting section can be flexibly changed.

[0021] The exhaust nozzle of the gas supply unit may be annular. By making the exhaust nozzle annular, the airflow layer can be formed with a simpler exhaust nozzle configuration.

[0022] The exhaust nozzle may have a plurality of gas ejection ports.

[0023] Further, the plurality of gas ejection ports may be arranged such that parts of the gas ejected from adjacent gas ejection ports intersect with each other outside the outer periphery of the substrate.

[0024] With the above configuration, an airflow layer can be formed with fewer gaps by gas discharged from the plurality of gas discharge ports.

[0025] The discharge nozzle may have an annular slit extending along the extension direction.

[0026] The inside of the exhaust nozzle may be divided into a plurality of regions along the circumferential direction, and the amount of the inert gas for each of the plurality of regions may be individually adjusted. With the above configuration, it becomes possible to individually adjust the amount of the inert gas for each of the plurality of divided regions, enabling more precise control.

[0027] Various exemplary embodiments will be described in detail below with reference to the drawings. Note that the same or corresponding parts in each drawing are denoted by the same reference numerals. Some drawings show an orthogonal coordinate system defined by an X-axis, a Y-axis, and a Z-axis. In the following embodiments, the Z-axis corresponds to the vertical direction, and the X-axis and the Y-axis correspond to the horizontal direction.

[0028] [Substrate processing system] First, the configuration of a substrate processing system 1 will be described with reference to Figures 1 to 3. The substrate processing system 1 includes a coating and developing apparatus 2 (liquid processing apparatus) and an exposure apparatus 3.

[0029] The coating and developing apparatus 2 is configured to form a resist film R on the surface of the workpiece W. The coating and developing apparatus 2 is also configured to perform a developing process of the resist film R. The exposure apparatus 3 is configured to transfer the workpiece W between the coating and developing apparatus 2 and perform an exposure process (pattern exposure) of the resist film R formed on the surface of the workpiece W. The exposure apparatus 3 may selectively irradiate an energy beam to an exposure target portion of the resist film R by a method such as immersion exposure.

[0030] The workpiece W to be processed is, for example, a substrate, or a substrate on which a film or a circuit is formed by performing a predetermined process. The substrate included in the workpiece W is, for example, a wafer containing silicon. The workpiece W (substrate) may be formed in a circular shape or in a plate shape other than a circular shape, such as a polygonal shape. The workpiece W may have a cutout portion in which a part is cut out. The cutout portion may be, for example, a notch (a groove such as a U-shape or a V-shape) or a linear portion extending linearly (so-called an orientation flat). The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or an intermediate body obtained by performing a predetermined process on these substrates. The diameter of the workpiece W may be, for example, about 200 mm to 450 mm.

[0031] The energy beam may be, for example, ionizing radiation, non-ionizing radiation, etc. Ionizing radiation is radiation having sufficient energy to ionize atoms or molecules. Ionizing radiation may be, for example, extreme ultraviolet (EUV), electron beam, ion beam, X-ray, α-ray, β-ray, γ-ray, heavy particle beam, proton beam, etc. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. Non-ionizing radiation may be, for example, g-ray, i-ray, KrF excimer laser, ArF excimer laser, F2 excimer laser, etc.

[0032] (Coating and developing equipment) The coating and developing apparatus 2 is configured to form a resist film R on the surface of the workpiece W before the exposure process by the exposure device 3. In addition, the coating and developing apparatus 2 is configured to perform a development process of the resist film R after the exposure process by the exposure device 3.

[0033] 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100 (control unit). The carrier block 4, the processing block 5, and the interface block 6 are aligned in the horizontal direction.

[0034] The carrier block 4 includes a carrier station 12 and a loading / unloading section 13. The carrier station 12 supports a plurality of carriers 11. Each carrier 11 accommodates at least one workpiece W in a sealed state. A side surface 11a of the carrier 11 is provided with an opening / closing door (not shown) for loading and unloading the workpiece W. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading section 13.

[0035] The loading / unloading section 13 is located between the carrier station 12 and the processing block 5. As shown in FIG. 1 and FIG. 3, the loading / unloading section 13 has a plurality of opening / closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening / closing doors of the carrier 11 face the opening / closing doors 13a. By simultaneously opening the opening / closing doors 13a and the opening / closing doors on the side surface 11a, the inside of the carrier 11 communicates with the inside of the loading / unloading section 13. As shown in FIG. 2 and FIG. 3, the loading / unloading section 13 has a built-in transport arm A1. The transport arm A1 is configured to take out the workpiece W from the carrier 11 and deliver it to the processing block 5, and to receive the workpiece W from the processing block 5 and return it to the inside of the carrier 11.

[0036] As shown in FIGS. 2 and 3, the processing block 5 includes processing modules PM1 to PM4.

[0037] The processing module PM1 is configured to form an underlayer film on the surface of the workpiece W. As shown in FIG. 3, the processing module PM1 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A2 configured to transport the workpiece W to these units. The liquid processing unit U1 of the processing module PM1 may be configured to apply, for example, a coating liquid for forming an underlayer film to the workpiece W. The heat processing unit U2 of the processing module PM1 may be configured to perform, for example, a heat treatment to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form an underlayer film. An example of the underlayer film is an anti-reflective (SiARC) film.

[0038] The processing module PM2 is configured to form an intermediate film (e.g., a hard mask) on the underlayer film. The processing module PM2 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A3 configured to transport a workpiece W to these units. The liquid processing unit U1 of the processing module PM2 may be configured to apply a coating liquid for forming an intermediate film to the workpiece W, for example. The heat processing unit U2 of the processing module PM2 may be configured to perform a heat treatment to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form an intermediate film. Examples of the intermediate film include a SOC (Spin On Carbon) film and an amorphous carbon film.

[0039] The processing module PM3 is configured to form a thermosetting and photosensitive resist film R on the intermediate film. The processing module PM3 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A4 configured to transport a workpiece W to these units. The liquid processing unit U1 of the processing module PM3 may be configured to apply a coating liquid (resist liquid) for forming a resist film to the workpiece W, for example. The heat processing unit U2 of the processing module PM3 may be configured to perform a heating process (PAB: Pre Applied Bake) for hardening the coating film formed on the workpiece W by the liquid processing unit U1 to form a resist film R.

[0040] The processing module PM4 is configured to perform a development process on the exposed resist film. The processing module PM4 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A5 configured to transport the workpiece W to these units. The liquid processing unit U1 of the processing module PM4 is configured to perform a development process (liquid processing) on ​​the workpiece W using a solution such as a developer. For example, the liquid processing unit U1 may be configured to partially remove the resist film R to form a resist pattern (not shown). The thermal processing unit U2 of the processing module PM4 may be configured to perform, for example, a heat treatment before the development process (PEB: Post Exposure Bake), a heat treatment after the development process (PB: Post Bake), or the like.

[0041] 2 and 3, the processing block 5 includes a shelf unit 14 located near the carrier block 4. The shelf unit 14 extends in the vertical direction and includes a plurality of cells lined up in the vertical direction. A transport arm A6 is provided near the shelf unit 14. The transport arm A6 is configured to raise and lower the workpiece W between the cells of the shelf unit 14.

[0042] The processing block 5 includes a shelf unit 15 located near the interface block 6. The shelf unit 15 extends in the vertical direction and includes a plurality of cells lined up in the vertical direction.

[0043] The interface block 6 has a built-in transport arm A7 and is connected to the exposure apparatus 3. The transport arm A7 is configured to take out the workpiece W from the shelf unit 15 and pass it to the exposure apparatus 3, and to receive the workpiece W from the exposure apparatus 3 and return it to the shelf unit 15.

[0044] (Liquid processing unit) With reference to Figs. 4 to 8, a liquid processing unit U1 that can be provided in each of the processing modules PM1 to PM4 will be described. Here, the liquid processing unit U1 in the processing module PM4 that performs development, for example, will be described. However, a similar configuration can be applied to a liquid processing unit U1 used in a module that performs other processing. As shown in Fig. 4, the liquid processing unit U1 includes a substrate holding section 20, a cup section 30, a processing liquid supply section 40, a rinsing liquid supply section 50, a gas supply section 60 (an inert gas supply section), and a module exhaust section 70 within a housing 10.

[0045] The substrate holding unit 20 is configured to hold and rotate the workpiece W. For example, the substrate holding unit 20 holds and rotates the workpiece W. The substrate holding unit 20 includes a rotating unit 21 (rotation drive unit), a shaft 22, and a holding unit 23.

[0046] The rotating unit 21 is configured to operate based on an operation signal from the control device 100 and rotate the shaft 22. The rotating unit 21 is a power source such as an electric motor. The holding unit 23 is provided at the tip of the shaft 22. The workpiece W is placed on the holding unit 23 with its surface facing upward. The holding unit 23 is configured to hold the workpiece W approximately horizontally, for example, by suction. That is, the substrate holding unit 20 rotates the workpiece W around a central axis (rotation axis) perpendicular to the surface of the workpiece W while the workpiece W is in an approximately horizontal position. In this embodiment, the surface of the workpiece W held by the substrate holding unit 20 is along the XY plane.

[0047] The cup section 30 is provided around the holding section 23 of the substrate holding section 20. The cup section 30 includes a cup 31, an exhaust pipe 32, and an exhaust pipe 33 (exhaust flow path, exhaust section).

[0048] The cup 31 has the function of receiving and recovering liquid that splashes or falls from the workpiece W. The cup 31 is roughly cylindrical with a bottom and is open at the top. The opening diameter at the top of the cup 31 is smaller than that at the bottom. However, the upper opening is large enough to allow the workpiece W to be loaded and unloaded. For this reason, the upper end 31a of the cup 31 is provided so as to be located on the outer periphery of the workpiece W in a plan view, and is formed so as to be located above the top surface of the workpiece W when held by the substrate holding part 20.

[0049] A discharge pipe 32 for discharging the collected liquid and an exhaust pipe 33 for exhausting the atmosphere inside the cup 31 are connected to the bottom surface of the cup 31 .

[0050] 6, in addition to the function of discharging the liquid in the cup 31, the discharge pipe 32 also has the function of discharging the liquid in the standby section 45 via a discharge pipe 45a connected to the standby section 45 described below. Also, an exhaust pipe 39 for discharging gas remaining in the pipe is connected to the discharge pipe 32, and the gas mixed with the liquid in the pipe is discharged via the exhaust pipe 39.

[0051] The exhaust pipe 33 has a function of discharging gas from within the cup 31. An opening / closing unit 35 for controlling the movement of gas within the pipe is provided midway along the exhaust pipe 33. The opening / closing unit 35 is, for example, configured of a damper. When the opening / closing unit 35 is in an open state, exhaust from within the cup 31 can be performed via the exhaust pipe 33. When the opening / closing unit 35 is in a closed state, exhaust via the exhaust pipe 33 is stopped. Note that in the liquid processing unit U1, the exhaust operation via the exhaust pipe 33 is continuously performed. In this state, by opening and closing the opening / closing unit 35, exhaust from within the cup 31 of the cup unit 30 to which the exhaust pipe 33 is connected can be switched between on and off.

[0052] An exhaust pipe 39 connected to the exhaust pipe 32 is connected to an exhaust pipe 33 that exhausts air from the cup 31. The exhaust pipe 39 is connected to the exhaust pipe 33 downstream of the opening / closing unit 35 (downstream when viewed from the exhaust flow), that is, at a position farther away from the cup unit 30 than the opening / closing unit 35. Therefore, the exhaust pipe 39 can perform an exhaust operation regardless of whether the opening / closing unit 35 is open or closed.

[0053] In this manner, the discharge pipe 32 and the exhaust pipe 33 provided in the cup part 30 have a function of discharging liquid (treatment liquid) not only from within the cup part 30 but also from within the standby part 45, for example.

[0054] Furthermore, an annular gas discharge nozzle 66 is provided along the opening at the upper end 31a of the cup 31. The gas discharge nozzle 66 is part of the gas supply unit 60, and will be described in detail later. The gas discharge nozzle 66 may be fixed to the cup 31 at or around the upper end 31a of the cup 31, or may be disposed independently of the cup 31.

[0055] The processing liquid supply unit 40 is configured to supply the processing liquid L1 onto the surface of the workpiece W. The processing liquid L1 is, for example, a liquid (e.g., a developing liquid) for performing processing (e.g., development) on the surface of the workpiece W using the processing liquid, but is not limited to this configuration.

[0056] The processing liquid supply unit 40 includes a rail 41 , an arm 42 , a nozzle 43 , a nozzle driving unit 44 , a standby unit 45 , a processing liquid supply source 46 , and a supply pipe 47 .

[0057] The rail extends, for example, in the negative X-axis direction (downward in FIG. 5) relative to the cup portion 30 (cup 31) along the Y-axis direction (left-right direction in FIG. 5). In addition to the arm 42, an arm 52 (described later) is attached, for example, as two arms, to the rail 41. The nozzle 43 is attached to the arm 42. The nozzle 43 has an outlet 43a that ejects the processing liquid L1. The nozzle driver 44 has a function of moving the arm 42 along the rail 41.

[0058] The standby section 45 is provided outside the cup 31 (outside the Y-axis positive direction) and is capable of retracting the nozzle 43 when the nozzle 43 is not being discharged onto the workpiece W. The standby section 45 is configured as a bottomed cylinder with an open top capable of accommodating the tip of the nozzle 43, and has an opening capable of receiving the treatment liquid L1 dummy discharged from the nozzle 43. A discharge pipe 45a is connected to the bottom wall of the standby section 45, and the treatment liquid L1 discharged into the standby section 45 can be discharged from the discharge pipe. The discharge pipe 45a is connected to the discharge pipe 32 of the cup section 30 as shown in FIG. 6.

[0059] The standby section 45 may be provided with a gas inlet 63 connected to a gas pipe 62 of a gas supply section 60, which will be described later. This will be described later.

[0060] The arm 42 can be moved along the rail 41 by the nozzle drive unit 44. This allows the nozzle 43 to move between the waiting area 45 and above the center of the workpiece W in the cup 31, and further moves along the radial direction of the workpiece W. The arm 42 can be raised and lowered by the nozzle drive unit 44, and the height of the nozzle 43 can be adjusted.

[0061] A supply pipe 47 is connected between the nozzle 43 and a processing liquid supply source 46 that supplies the processing liquid. A valve or the like for controlling the flow of the processing liquid may be provided on the supply pipe 47.

[0062] The rinsing liquid supply unit 50 includes an arm 52, a nozzle 53, a nozzle driving unit 54, a waiting unit 55, a rinsing liquid supply source 56, and a supply pipe 57. The basic configuration of the rinsing liquid supply unit 50 is similar to that of the processing liquid supply unit 40.

[0063] The arm 52 is attached to the rail 41 in the same manner as the arm 42. The nozzle 53 is attached to the arm 52. The nozzle 53 has an outlet for discharging the rinsing liquid. Furthermore, the nozzle driving unit 54 has a function of moving the arm 52 along the rail 41. Moreover, the waiting unit 55 is provided outside the cup 31 (outside the positive Y-axis direction side), and is capable of retracting the nozzle 53 when it is not discharging the rinsing liquid onto the workpiece W.

[0064] The arm 52 is movable along the rail 41 by the nozzle drive unit 54. This allows the nozzle 43 to move between the waiting area 45 and above the center of the workpiece W in the cup 31, and further moves along the radial direction of the workpiece W. The arm 52 can be raised and lowered by the nozzle drive unit 54, and the height of the nozzle 53 can be adjusted.

[0065] A supply pipe 57 is connected between the nozzle 53 and the rinsing liquid supply source 56. A valve or the like for controlling the flow of the rinsing liquid may be provided on the supply pipe 57.

[0066] The configurations of the processing liquid supply unit 40 and the rinsing liquid supply unit 50 are merely examples and may be modified as appropriate. For example, the nozzle 43 of the processing liquid supply unit 40 and the nozzle 53 of the rinsing liquid supply unit 50 may be mounted on the same arm.

[0067] The gas supply unit 60 has a function of drawing in gas from the waiting unit 45 in the processing liquid supply unit 40 and controlling the airflow around the workpiece W in the cup 31 by using an inert gas. Examples of the inert gas include nitrogen and argon. As shown in FIG. 6 etc., the gas supply unit 60 is configured to include a gas supply source 61, a gas pipe 62, and a gas exhaust nozzle 66.

[0068] The gas pipe 62 connects between the gas supply source 61 and the gas exhaust nozzle 66. At this time, a gas inlet 63 is provided for the gas pipe 62 upstream of the gas exhaust nozzle 66 so that the gas pipe 62 can draw in gas from the standby section 45. The gas inlet 63 may be provided with an openable and closable valve or the like. Although FIG. 6 shows a state in which the gas pipe 62 itself passes through the standby section 45, only the gas inlet 63 may be provided in the standby section 45.

[0069] The gas discharge nozzle 66 has a function of forming an airflow of inert gas in the cup 31. As shown in Figs. 6 to 8, the gas discharge nozzle 66 is an annular pipe provided below the upper end 31a of the cup 31. As shown in Figs. 4, 7, 9, and the like, the shape of the gas discharge nozzle 66 is set so as to be disposed on the outer periphery side of the workpiece W in a plan view. As shown in Fig. 7, for example, the gas pipe 62 is connected to the annular gas discharge nozzle 66 at one point so as to communicate with the gas discharge nozzle 66. The gas pipe 62 may be disposed to penetrate the cup 31, or may be configured to pass through the inside of the upper end 31a of the cup 31 and connect to the gas discharge nozzle 66 as shown in Fig. 6.

[0070] 8(a), for example, a plurality of gas discharge ports 66a for discharging an inert gas into the cup 31 are provided below the gas discharge nozzle 66. For example, the plurality of gas discharge ports 66a may be arranged at predetermined intervals along the extension direction of the gas discharge nozzle 66. As shown in FIG. 8, when the gas discharge nozzle 66 is annular, the plurality of gas discharge ports 66a may also be arranged annularly.

[0071] The gas discharge ports 66a are formed, for example, so as to spray the inert gas radially (spreading downward and outward from the gas discharge ports 66a). For example, as shown in Fig. 8(b), the shape of the inert gas discharged from the gas discharge nozzle 66 may be made radial by configuring the opening diameter of the gas discharge ports 66a to increase from the inside to the outside of the gas discharge nozzle 66.

[0072] The gas discharge port 66a of the gas discharge nozzle 66 may have a shape (for example, a slit shape) that extends in an annular shape along the extension direction of the gas discharge nozzle 66. In this case, as shown in FIG. 8(b), the shape of the opening may be set so that the opening diameter forming the gas discharge port 66a increases. Also, as shown in FIG. 8(c), a flow straightening plate 66c whose diameter increases from the inside to the outside of the gas discharge nozzle 66 may be provided along the extension direction of the slit (extension direction of the gas discharge nozzle 66). Even with this configuration, the shape of the inert gas discharged from the gas discharge port 66a can be made radial. Also, the shape of the inert gas discharged from the gas discharge port 66a may be made radial by a method different from these examples.

[0073] The gas discharge ports 66a are arranged at predetermined intervals along the extension direction of the gas discharge nozzle 66. In this case, by adjusting the arrangement of the gas discharge ports 66a, an airflow layer AC (air curtain) can be formed by the airflow of the inert gas sprayed from the gas discharge ports 66a, as shown in FIG. 8(a). Specifically, as shown in FIG. 8(a), a configuration can be made in which a part of the gas discharged from the adjacent gas discharge ports 66a intersects outside the outer periphery of the workpiece W. By arranging the multiple gas discharge ports 66a in the above-mentioned relationship, the airflow layer AC can be formed. In addition, when the airflow layer AC is formed, the movement of gas passing through the airflow layer AC can be restricted.

[0074] The airflow layer AC by the gas discharge port 66a provided in the gas discharge nozzle 66 can be formed downward from the gas discharge nozzle 66 as shown in FIG. 9. At this time, the airflow layer AC can be formed at a position that does not interfere with the workpiece W, that is, so as to surround the workpiece W outside the outer periphery of the workpiece W. In the configuration shown in this embodiment, for example, as shown in FIG. 7, the gas discharge port 66a is arranged at a position that does not overlap with the workpiece W in a plan view. Therefore, by discharging the inert gas vertically downward from the gas discharge port 66a, the airflow layer AC can be formed directly below the gas discharge nozzle 66 so as not to interfere with the workpiece W. It is sufficient that the airflow layer AC is formed so as not to overlap with the workpiece W. For example, as shown in FIG. 9, the gas discharge port 66a may be arranged so as to form the airflow layer AC in a direction slightly away from the workpiece W.

[0075] The module exhaust unit 70 is provided, for example, at the bottom of the housing 10, and is configured to exhaust gas from within the housing 10 by operating based on a signal from the control device 100. For example, a damper capable of adjusting the amount of exhaust depending on the opening degree may be used for the module exhaust unit 70. By adjusting the amount of exhaust from the housing H by the module exhaust unit 70, the temperature, pressure, humidity, and the like within the housing 10 can be controlled. The module exhaust unit 70 may be controlled to constantly exhaust the inside of the housing 10 during the liquid treatment of the workpiece W. The gas exhausted from the module exhaust unit 70 may be discharged to the outside via a pipe or the like that joins the exhaust pipe 33, for example.

[0076] (Control device) The control device 100 is configured to partially or entirely control the elements of the coating and developing apparatus 2. The control device 100 controls at least the liquid processing unit U1. As shown in FIG. 10, the control device 100 has a reading unit 101, a storage unit 102, a processing unit 103, and an instruction unit 104 as functional modules. These functional modules are merely a division of the functions of the control device 100 into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the control device 100 is divided into such modules. Each functional module is not limited to being realized by the execution of a program, and may be realized by a dedicated electric circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates the same.

[0077] The reading unit 101 is configured to read a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each unit of the coating and developing apparatus 2. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

[0078] The storage unit 102 is configured to store various data. For example, the storage unit 102 may store a program read from a recording medium RM by the reading unit 101, setting data input by an operator via an external input device (not shown), and the like. The program may be configured to operate each unit of the coating and developing apparatus 2.

[0079] The processing unit 103 is configured to process various data. For example, the processing unit 103 may generate signals for operating the liquid processing unit U1, the heat-processing unit U2, the liquid processing unit U5, etc., based on the various data stored in the storage unit 102.

[0080] The instruction unit 104 is configured to transmit the operation signal generated in the processing unit 103 to various devices.

[0081] The control device 100 is configured with one or more control computers. For example, the control device 100 has a circuit 120 shown in Fig. 11. The circuit 120 may include one or more processors 121, a memory 122, a storage 123, an input / output port 124, and a timer 125.

[0082] The storage 123 has a computer-readable storage medium such as a hard disk. The storage medium records a program for causing the coating and developing apparatus 2 to execute a liquid processing procedure described below. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 122 temporarily records the program loaded from the storage medium of the storage 123 and the results of calculations by the processor 121. The processor 121 configures each of the above-mentioned functional modules by executing the above-mentioned programs in cooperation with the memory 122. The input / output port 124 inputs and outputs electric signals between each part of the coating and developing apparatus 2. The timer 125 measures the elapsed time by, for example, counting reference pulses at a constant period.

[0083] The hardware configuration of the control device 100 is not necessarily limited to configuring each functional module by a program. For example, each functional module of the control device 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates the dedicated logic circuit.

[0084] The coating and developing apparatus 2 may include one control device 100, or may include a controller group (control unit) configured with a plurality of control devices 100. When the coating and developing apparatus 2 includes a controller group, each of the above-mentioned functional modules may be realized by one control device 100, or may be realized by a combination of two or more control devices 100. When the control device 100 includes a plurality of computers (circuits 120), each of the above-mentioned functional modules may be realized by one computer (circuit 120). Also, each of the above-mentioned functional modules may be realized by a combination of two or more computers (circuits 120). The control device 100 may have a plurality of processors 121. In this case, each of the above-mentioned functional modules may be realized by one processor 121, or may be realized by a combination of two or more processors 121.

[0085] [Operation method of substrate processing apparatus] Next, the operation method of the coating and developing apparatus 2 will be described.

[0086] (First Method) Two methods will be described as the operation method of the coating and developing apparatus 2. As the first method, a processing method will be described when performing substrate processing on a workpiece W. Fig. 12 is a flowchart showing an example of the substrate processing method, and Fig. 13 shows the relationship between the discharge of the processing liquid L1 and the exhaust state from inside the housing 10 in chronological order.

[0087] As a premise, the controller 100 controls each part of the coating and developing apparatus 2 to process the workpiece W in the processing modules PM1 to PM3, thereby forming a resist film on the surface of the workpiece W. Next, the controller 100 causes the transport arm A7 or the like to transport the workpiece W from the coating and developing apparatus 2 to the exposure apparatus 3. Next, another controller different from the controller 100 controls the exposure apparatus 3 to expose the resist film formed on the surface of the workpiece W to a predetermined pattern by the exposure apparatus 3. Furthermore, next, the controller 100 controls each part of the coating and developing apparatus 2 to transport the workpiece W from the exposure apparatus 3 to the liquid processing unit U1 of the processing module PM4 by the transport arm A5 or the like.

[0088] In the following example, a case will be described in which so-called static development is performed in which the reaction between the resist film formed on the surface of the workpiece W and the developer (processing liquid) proceeds while the workpiece W is stationary. In this case, the developer is supplied as the processing liquid to the entire surface of the workpiece W, and then the workpiece W is kept stationary for a predetermined period of time to allow development to proceed. For this reason, the workpiece W is rotated while the processing liquid is being supplied, and then a period of time is provided for the workpiece W to be stationary.

[0089] As described above, in liquid processing unit U1, the exhaust operation through exhaust pipe 33 continues. Also, exhaust from module exhaust section 70 continues.

[0090] In this state, first, the control device 100 starts cup evacuation (step S01). Cup evacuation means to evacuate the inside of the cup 31 of the cup unit 30. Specifically, the open / close unit 35 of the exhaust pipe 33 is opened. This causes the exhaust pipe 33 to evacuate the inside of the cup 31. This stage corresponds to the time t0 to t1 in FIG. 13. At this stage, the nozzle 43 is not ejecting the processing liquid. In this case, the nozzle 43 waits in the waiting unit 45, for example.

[0091] Next, the control device 100 supplies the processing liquid L1 to the workpiece W (step S02). Specifically, while the workpiece W is rotated by the substrate holder 20, the nozzle 43 is moved onto the workpiece W, the processing liquid L1 is supplied to the workpiece W, and the supply is terminated after a predetermined time. When the supply of the processing liquid L1 from the nozzle 43 is terminated, the nozzle 43 is moved to the standby section 45 and is made to wait. This stage corresponds to the time t1 to t2 in FIG. 13. The cup exhaust is continued while the processing liquid L1 is being supplied to the workpiece W. Therefore, when liquid particles (mist) of the processing liquid are scattered by the supply of the processing liquid L1 to the workpiece W in the cup 31, they are exhausted from the exhaust pipe 33. When stationary development is performed, the rotation of the workpiece W may be terminated in response to the stop of the supply of the processing liquid L1 to the workpiece W.

[0092] At this stage, the supply of the processing liquid L1 is stopped, but the cup continues to be evacuated for a while after that. By following this procedure, it is possible to remove the liquid droplets (mist) of the processing liquid remaining in the cup 31 after the supply of the processing liquid L1 is completed, and to prevent the liquid droplets (mist) of the processing liquid from scattering around the workpiece W. This stage corresponds to the time t2 to t3 in FIG. 13.

[0093] Next, the control device 100 stops the cup exhaust (step S03). By performing the cup exhaust for a predetermined time (between t2 and t3), the liquid droplets (mist) of the processing liquid floating around the workpiece W can be removed, and the cup exhaust is then terminated. Specifically, the opening and closing unit 35 of the exhaust pipe 33 is closed. This causes the exhaust pipe 33 to exhaust air from inside the cup 31. Note that the module exhaust unit 70 continues to exhaust air from inside the housing 10 (module exhaust).

[0094] Next, in the control device 100, the gas supply unit 60 supplies an inert gas (step S04). Specifically, the gas supply unit 60 discharges gas from the gas outlet 66a of the gas discharge nozzle 66 into the cup 31. The gas discharged from the gas outlet 66a of the gas discharge nozzle 66 into the cup 31 forms an airflow layer AC (see FIG. 9). By forming such an airflow layer AC in the presence of the workpiece W, gas and liquid particles (mist) present on the outer periphery side of the airflow layer AC (for example, the opposite side from the workpiece W side shown in FIG. 9) are prevented from scattering toward the workpiece W side.

[0095] The time for forming the airflow layer AC is set to correspond to so-called static development. Therefore, the time for supplying the inert gas is determined in advance. This stage can be set to correspond to, for example, times t3 to t4 in FIG. 13. That is, the gas supply unit 60 may supply the inert gas during the time period when the cup exhaust is stopped.

[0096] When the supply of the inert gas is terminated, the processing of the workpiece W (for example, stationary development) is completed.

[0097] 13 shows a configuration in which cup evacuation is started again at time t4 when the supply of inert gas ends, and then, at time t5, the ejection of processing liquid is repeated. When ejection of processing liquid is to be performed again, ejection of processing liquid is started in a state in which cup evacuation has started. That is, as shown in FIG. 12, a configuration may be adopted in which it is determined whether or not the next supply of processing liquid is to be started (step S05), and if the next supply of processing liquid is to be performed (S05-YES), a series of processes is repeated.

[0098] The "processing liquid" shown in FIG. 12 and FIG. 13 may be regarded as a rinsing liquid and the same procedure may be performed. That is, the rinsing liquid may be supplied to the workpiece W while the cup exhaust is being performed (S01 to S03), and after the cup exhaust is stopped (S03), an inert gas may be supplied (S04). In this case, for example, the workpiece W may be carried out during the inert gas supply period. Even in this case, by forming an airflow layer AC by supplying an inert gas after stopping the cup exhaust, the liquid particles (mist) generated by rinsing (cleaning) the surface of the workpiece W with the rinsing liquid are prevented from adhering to the workpiece W. In practice, in the liquid processing unit U1, after supplying a developing liquid as the processing liquid L1 to the workpiece W to perform static development, cleaning with the rinsing liquid may be performed, and further, a process of drying the workpiece W while rotating may be performed. In such a case, while the cup is being evacuated, a rinse liquid may be supplied to the workpiece W (S02), and then after the workpiece W is rotated, the cup evacuation may be stopped (S03) and an inert gas may be supplied (S04).

[0099] (Second Method) As a second method, an operation method for dummy discharge of the processing liquid from the nozzle 43 while the nozzle 43 is waiting in the waiting section 45 will be described with reference to FIG.

[0100] At a timing completely different from the timing of performing the processing (substrate processing) on ​​the workpiece W described in the first method (for example, during maintenance other than production), there is a case where a "dummy discharge" is performed in which the processing liquid L1 is discharged while the nozzle 43 is waiting in the waiting section 45. At this time, the processing liquid L1 discharged into the waiting section 45 by the dummy discharge is discharged from the discharge pipe 45a. However, there is a possibility that droplets (mist) of the processing liquid will scatter inside the waiting section 45 or around it due to the dummy discharge.

[0101] In response to this, by performing a "dummy discharge" operation while operating the gas supply unit 60, it is possible to suppress scattering of droplets (mist) of the processing liquid.

[0102] Specifically, by flowing an inert gas through the gas pipe 62 in the gas supply unit 60, liquid droplets (mist) of the processing liquid scattered in the waiting unit 45 due to the dummy discharge can be drawn into the gas pipe 62 through the gas inlet port 63. Therefore, the liquid droplets (mist) scattered due to the dummy discharge are collected in the gas pipe 62.

[0103] Furthermore, the inert gas mixed with the liquid droplets flowing through the gas piping 62 is discharged into the cup 31 from the gas discharge port 66a of the gas discharge nozzle 66. However, as described above, the "dummy discharge" itself is performed at a timing separate from the timing of the substrate processing of the workpiece W, and therefore, it can be discharged to the outside from the exhaust pipe 33 or the module exhaust section 70 without affecting the workpiece W.

[0104] When the workpiece W is not being processed, the amount of exhaust from the exhaust pipe 33 may be suppressed. In this case, the amount of exhaust from the exhaust pipe 39 also decreases, and therefore exhaust from liquids such as the processing liquid flowing through the exhaust pipe 32 and the exhaust pipe 45a may not be performed sufficiently. In such a situation, if a dummy discharge of the processing liquid from the nozzle 43 is performed in the standby section 45, a backflow of the processing liquid from the exhaust pipe 45a to the standby section 45 side may occur, and droplets (mist) of the processing liquid may be scattered from the standby section 45.

[0105] In response to this, as described above, by using the supply of inert gas from the gas supply unit 60 to exhaust gas from within the waiting section 45 when performing dummy ejection, it is possible to prevent droplets (mist) of the processing liquid from scattering and floating in the waiting section 45 and its surroundings.

[0106] From the viewpoint of removing droplets (mist) of the processing liquid, the gas may be exhausted from within the waiting section 45 by utilizing the supply of inert gas from the gas supply section 60 even at a timing other than the dummy ejection.

[0107] 6, gas such as an inert gas flowing through the gas pipe 62 reaches a gas exhaust nozzle 66. In this case, for example, a branch pipe 69 (shown by a broken line in FIG. 6) that can be opened and closed and branches off from the gas pipe 62 to exhaust gas to the outside may be newly provided, and gas including the inert gas supplied from the upstream side may be exhausted from the branch pipe 69 to the outside of the system as necessary. With such a configuration, for example, when exhaust in the standby section 45 is required while avoiding exhaust of gas into the cup 31, it is possible to make it possible to exhaust gas from the branch pipe 69 to the outside of the system, and to prevent the gas from reaching the gas exhaust nozzle 66.

[0108] [Effect] According to the above-described substrate processing apparatus, by supplying an inert gas from the gas exhaust nozzle 66 of the gas supply unit 60, an annular airflow layer AC is formed in the cup 31 so as to surround the workpiece W outward from the outer periphery of the workpiece W. Therefore, by forming this airflow layer AC, it is possible to prevent liquid particles floating in the cup 31 from moving toward the workpiece W and adhering to the workpiece W.

[0109] When liquid processing is performed on the workpiece in the liquid processing unit U1, the scattering and floating of liquid droplets in the cup 31 is suppressed by exhausting air from the exhaust pipe 33. On the other hand, as in the above-mentioned static development, exhaust from the cup 31 may be stopped at a timing when the processing liquid is not discharged onto the workpiece W. For example, as described in the above embodiment, the opening / closing part 35 may be closed to stop exhaust using the exhaust pipe 33. In this case, liquid droplets may remain in the cup 31 and float due to the stop of exhaust. If the liquid droplets adhere to the workpiece W, this may affect the subsequent processing, which may result in an effect on the product yield.

[0110] In contrast, with the above-described configuration, the annular airflow layer AC formed so as to surround the workpiece W outward from the outer periphery of the workpiece W prevents the liquid droplets in the cup 31 from flowing toward the workpiece W. Therefore, adhesion of the liquid droplets to the workpiece W is prevented.

[0111] The control device 100 may be configured to control the gas supply unit 60 to supply inert gas from the gas exhaust nozzle 66 after switching the opening / closing unit 35 from the open state to the closed state. When the opening / closing unit 35 is closed, exhaust from the inside of the cup 31 stops, which may create a state in which liquid particles are likely to float in the cup 31. In response to this, by configuring the opening / closing unit 35 to supply inert gas after switching to the closed state, even if liquid particles float in the cup 31, they are prevented from adhering to the workpiece W.

[0112] The control device 100 may switch the opening / closing part 35 from the open state to the closed state after the processing liquid supply part 40 supplies the processing liquid to the workpiece rotated by the rotation part 21 (rotation drive part) in the substrate holding part 20, thereby forming a liquid film of the processing liquid on the workpiece W. With such a configuration, it is possible to prevent the adhesion of liquid particles to the liquid film on the surface of the workpiece W.

[0113] The substrate holder 20 may further include a rinse liquid supply unit 50 that supplies rinse liquid to the workpiece W held by the substrate holder 20. In this case, the control device 100 may switch the opening / closing unit 35 from the open state to the closed state after the rinse liquid supply unit 50 supplies rinse liquid to the workpiece W and the rotating unit 21 rotates the workpiece W. With this configuration, it is possible to prevent liquid droplets from adhering to the surface of the workpiece W after the rinse liquid is supplied.

[0114] The processing liquid supply unit 40 may have a nozzle 43 that discharges the processing liquid onto the substrate, and a standby unit 45 that keeps the nozzle 43 on standby. The gas supply unit 60 may have a gas supply source 61, a gas pipe 62 that connects the gas supply source 61 and a gas exhaust nozzle 66, and a gas inlet 63 that can suck gas from the standby unit 45 toward the gas pipe 62. In this case, when liquid droplets originating from the processing liquid float near the standby unit 45, it is possible to suck the liquid droplets around the standby unit 45 toward the gas pipe 62 by utilizing the gas supply from the gas supply unit 60. Therefore, it is possible to prevent the liquid droplets from floating around the standby unit 45, and further prevent the liquid droplets from adhering to the substrate.

[0115] The gas supply unit 60 may further include a branch pipe 69 between the gas inlet 63 in the gas pipe 62 and the gas exhaust nozzle 66, the branch pipe 69 being capable of branching off from the pipe and discharging the gas in the pipe. With this configuration, for example, the inert gas can be discharged to the outside without being supplied to the gas exhaust nozzle 66 that supplies gas into the cup 31 using the branch pipe 69. Therefore, the timing of performing the process of removing liquid droplets from the standby unit 45 can be flexibly changed.

[0116] The gas exhaust nozzle 66 of the gas supply unit 60 may be annular. By making the exhaust nozzle annular, the airflow layer can be formed with a simpler exhaust nozzle configuration.

[0117] The gas discharge nozzle 66 may have a plurality of gas discharge ports 66a as shown in Fig. 8(a). The plurality of gas discharge ports may be arranged such that some of the gas discharged from adjacent gas discharge ports 66a intersect outside the outer periphery of the substrate. With the above configuration, the gas discharged from the plurality of gas discharge ports can form an airflow layer AC with fewer gaps, i.e., a stable airflow layer AC, and the movement of liquid particles can be appropriately regulated.

[0118] Furthermore, the gas discharge nozzle 66 may have an annular slit extending along the extension direction of the nozzle.

[0119] [Variations] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and modifications may be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0120] For example, it is possible to appropriately change the shape of the gas discharge nozzle 66. In the above embodiment, an annular nozzle was assumed, but the shape may be appropriately changed as long as the desired airflow layer AC can be formed.

[0121] FIG. 14 shows a gas exhaust nozzle 66X as an example of the position of the exhaust nozzle according to the modified example. The gas exhaust nozzle 66X has a plurality of gas discharge ports 66a like the gas exhaust nozzle 66, but the internal path is divided into four by partition walls 68, and four independent regions are formed in the tube. In addition, gas pipes 62a to 62d are connected to each region. In this configuration, since the gas pipes 62a to 62d are connected to each of the multiple regions, the gas supply amount can be adjusted for each pipe. That is, the amount of inert gas can be adjusted individually for each region. With the above configuration, it is possible to adjust the amount of inert gas individually for each of the multiple partitioned regions, allowing for more precise control.

[0122] Further, the gas supply unit 60 may be configured not to recover the liquid droplets in the standby unit 45. In other words, the gas pipe 62 may be configured not to have the gas inlet 63 from the standby unit 45.

[0123] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0124] 1...substrate processing system, 2...coating and developing apparatus, 3...exposure apparatus, 10...housing, 20...substrate holding section, 21...rotating section, 30...cup section, 31...cup, 31a...upper end, 32...exhaust pipe, 33...exhaust pipe, 35...opening / closing section, 39...exhaust pipe, 40...processing liquid supply section, 43...nozzle, 45...standby section, 45a...exhaust pipe, 46...processing liquid supply source, 47...supply pipe, 50...rinsing liquid supply section, 53...nozzle, 55...standby section, 56...rinsing liquid supply source, 57...supply pipe, 60...gas supply section, 61...gas supply source, 62, 62a to 62d...gas piping, 63...gas inlet, 66, 66X...gas exhaust nozzle, 66a...gas outlet, 66c...rectifying plate, 68...partition wall, 69...branching pipe, 70...module exhaust section, 100...control device.

Claims

1. A substrate holder for holding a substrate; a rotation drive unit that rotates the substrate held by the substrate holder; a cup disposed to surround the substrate held by the substrate holder and having an upper end located above the substrate; a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holder; an exhaust section that exhausts air from inside the cup, the exhaust section including an exhaust flow path connected to a lower portion of the cup and an opening / closing section that opens and closes the exhaust flow path; a gas supply unit that supplies an inert gas from an exhaust nozzle provided near an upper end of the cup toward the outside of the outer periphery of the substrate so that an annular airflow layer is formed in the cup so as to surround the substrate outside the outer periphery of the substrate; a control unit that controls the processing liquid supply unit, the opening / closing unit, and the gas supply unit; having The control unit controls the gas supply unit to supply the inert gas from the exhaust nozzle after switching the opening / closing unit from an open state to a closed state.

2. 2. The substrate processing apparatus of claim 1, wherein the control unit switches the opening / closing unit from an open state to a closed state after the processing liquid supply unit supplies the processing liquid to the substrate rotated by the rotation drive unit to form a liquid film of the processing liquid on the substrate.

3. a rinse liquid supply unit that supplies a rinse liquid to the substrate held by the substrate holder, 3 . The substrate processing apparatus according to claim 1 , wherein the control unit switches the opening / closing unit from the open state to the closed state after the rinsing liquid supply unit supplies the rinsing liquid to the substrate and the rotation drive unit rotates the substrate. 4 . The substrate processing apparatus according to claim 1 ,

4. the processing liquid supply unit includes a nozzle that ejects the processing liquid onto the substrate, and a standby unit that causes the nozzle to wait; The gas supply unit includes: A gas supply source; a gas pipe connecting the gas supply source and the exhaust nozzle; a gas intake port capable of sucking gas from the standby section toward the gas piping; The substrate processing apparatus according to any one of claims 1 to 3, further comprising:

5. 5 . The substrate processing apparatus according to claim 4 , wherein the gas supply unit further comprises a branch pipe, which is located between the gas inlet port and the exhaust nozzle in the gas pipe and branches off from the gas pipe to exhaust the gas in the gas pipe.

6. The substrate processing apparatus according to claim 1, wherein the exhaust nozzle of the gas supply unit is annular.

7. The substrate processing apparatus according to claim 6 , wherein the exhaust nozzle has a plurality of gas discharge ports.

8. The substrate processing apparatus according to claim 7 , wherein the plurality of gas discharge ports are arranged such that parts of the gas discharged from adjacent gas discharge ports intersect with each other outside an outer periphery of the substrate.

9. The substrate processing apparatus according to claim 6 , wherein the exhaust nozzle has an annular slit extending along an extension direction.

10. The substrate processing apparatus according to any one of claims 6 to 9, wherein the inside of the exhaust nozzle is divided into a plurality of regions along a circumferential direction, and the amount of the inert gas can be adjusted individually for each of the plurality of regions.

11. A substrate holding part for holding a substrate; a rotation drive unit that rotates the substrate held by the substrate holder; a cup disposed to surround the substrate held by the substrate holder and having an upper end located above the substrate; a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holder; an exhaust section that exhausts air from inside the cup, the exhaust section including an exhaust flow path connected to a lower portion of the cup and an opening / closing section that opens and closes the exhaust flow path; a gas supply unit that supplies an inert gas from an exhaust nozzle provided near an upper end of the cup toward the outside of the outer periphery of the substrate so that an annular airflow layer is formed in the cup so as to surround the substrate outside the outer periphery of the substrate; a rinse liquid supply unit that supplies a rinse liquid to the substrate held by the substrate holder; a control unit that controls the processing liquid supply unit, the opening / closing unit, and the gas supply unit; having The control unit switches the opening / closing unit from an open state to a closed state after the rinsing liquid supply unit supplies the rinsing liquid to the substrate and the rotation drive unit rotates the substrate.

12. A substrate holder for holding a substrate; a rotation drive unit that rotates the substrate held by the substrate holder; a cup disposed to surround the substrate held by the substrate holder and having an upper end located above the substrate; a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holder; an exhaust section that exhausts air from inside the cup, the exhaust section including an exhaust flow path connected to a lower portion of the cup and an opening / closing section that opens and closes the exhaust flow path; a gas supply unit that supplies an inert gas from an exhaust nozzle provided near an upper end of the cup toward the outside of the outer periphery of the substrate so that an annular airflow layer is formed in the cup so as to surround the substrate outside the outer periphery of the substrate; a control unit that controls the processing liquid supply unit, the opening / closing unit, and the gas supply unit; having the processing liquid supply unit includes a nozzle that ejects the processing liquid onto the substrate, and a standby unit that causes the nozzle to wait; The gas supply unit includes: A gas supply source; a gas pipe connecting the gas supply source and the exhaust nozzle; a gas intake port capable of sucking gas from the standby section toward the gas piping; The substrate processing apparatus has

13. The substrate processing apparatus of claim 12, wherein the gas supply unit further has a branch pipe between the gas inlet port in the gas piping and the exhaust nozzle, the branch pipe being capable of branching off from the gas piping and exhausting the gas in the gas piping.

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