Charged particle beam drawing apparatus and charged particle beam drawing method

Abstract

To realize a high throughput and a high lithography accuracy.SOLUTION: A charged particle beam lithography apparatus according to a present embodiment, sequentially performs lithography of a pattern at a plurality of deflection positions in a sample by deflecting a charged particle beam by a deflector. The apparatus comprises: a storage part that stores related information indicating a relation between a lapse time from a deflection start of the deflector and a position deviation amount of a shot position of the charged particle beam; a shot position correction part that acquires a first position deviation amount corresponding to a deflection position whose lithography order of the pattern is nth (n is an integer of 2 or larger) and a second position deviation amount corresponding to the n-1th deflection position by using a settling time and the shot time of the deflector and the related information, and calculating the position correction amount by adding the first position deviation amount and the second position deviation amount to correct the shot position; and a lithography part that applies the charged particle beam to the nth deflection position by using a shot data in which the shot position is corrected to perform lithography of the pattern.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a charged particle beam drawing apparatus and a charged particle beam drawing method. [Background technology]

[0002] As LSIs become more highly integrated, the circuit line width required for semiconductor devices is becoming finer year by year. To form the desired circuit pattern on a semiconductor device, a method is adopted in which a high-precision master pattern formed on quartz is reduced and transferred onto a wafer using a reduction projection exposure apparatus. To create the high-precision master pattern, a technique known as electron beam lithography is used, in which a resist is exposed to light by an electron beam drawing apparatus to form a pattern.

[0003] An electron beam lithography device applies a predetermined voltage to a deflector arranged along the optical path of the electron beam to deflect the electron beam and draw a pattern on a substrate placed on a stage. When driving the deflector with the output voltage from a DAC (digital-analog converter) amplifier, a settling time for the output voltage according to the load is required. If the settling time is insufficient, an error occurs in the deflection movement amount of the electron beam, reducing the drawing accuracy. On the other hand, if the settling time is too long, the throughput decreases. Therefore, it is necessary to set the settling time as short as possible without reducing the drawing accuracy. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 8-083740 [Patent Document 2] International Publication No. 2008 / 139569 [Patent Document 3] Japanese Patent Application Publication No. 7-142351 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a charged particle beam drawing apparatus and a charged particle beam drawing method that realize high throughput and high drawing accuracy. [Means for solving the problem]

[0006] A charged particle beam drawing apparatus according to one aspect of the present invention is a charged particle beam drawing apparatus that deflects a charged particle beam by a deflector to draw patterns in sequence at a plurality of deflection positions in a sample, the apparatus including a shot data generation unit that converts drawing data into shot data including each shot position and shot time of the charged particle beam, a storage unit that stores correlation information indicating a relationship between an elapsed time from a deflection start of the deflector and a positional deviation amount of the shot position of the charged particle beam, and a settling time of the deflector to store a first positional deviation amount corresponding to a deflection position that is nth (n is an integer of 2 or more) in the pattern drawing order. a shot position correction unit that obtains a second positional deviation amount corresponding to the n-1th deflection position using the elapsed time from the start of deflection and the relevance information, obtains a position correction amount by adding the first positional deviation amount and the second positional deviation amount, and corrects a shot position defined by the shot data at the n-th deflection position based on the position correction amount, and a drawing unit that irradiates the n-th deflection position with a charged particle beam using the shot data with the corrected shot position to draw a pattern.

[0007] A charged particle beam lithography method according to one aspect of the present invention is a charged particle beam lithography method for deflecting a charged particle beam by a deflector to sequentially draw patterns at a plurality of deflection positions in a sample, the method including a step of converting lithography data into shot data including each shot position and shot time of the charged particle beam, and a step of calculating a first positional deviation amount corresponding to a deflection position that is n-th (n is an integer of 2 or more) in the pattern lithography order based on a settling time of the deflector and the shot time, and a relationship between a previously obtained elapsed time from the start of deflection of the deflector and a positional deviation amount of the shot position of the charged particle beam. acquiring a second positional deviation amount corresponding to the n-1th deflection position in the pattern writing order using the elapsed time from the start of the deflection and the relevance information; calculating a position correction amount by adding the first positional deviation amount and the second positional deviation amount, and correcting a shot position defined by the shot data at the nth deflection position based on the position correction amount; and irradiating a charged particle beam to the nth deflection position using the shot data with the corrected shot position, to write a pattern. Effect of the Invention

[0008] According to the present invention, high throughput and high drawing accuracy can be achieved. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic configuration diagram of a drawing device according to an embodiment of the present invention. [Diagram 2] FIG. 4 is a conceptual diagram illustrating a deflection region. [Diagram 3] 11 is a graph showing an example of a change in settling error over time. [Figure 4] Graph (a) shows the change over time of the settling error in the first deflection region (TF), and graph (b) shows the change over time of the settling error in the second deflection region (TF). [Diagram 5] 11 is a flowchart illustrating a drawing method according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] In the following, in the embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and may be a beam using charged particles such as an ion beam. Also, a variable shaping type drawing apparatus will be described as an example of a charged particle beam apparatus.

[0011] Fig. 1 is a conceptual diagram showing the configuration of a drawing apparatus in an embodiment. In Fig. 1, drawing apparatus 100 includes drawing unit 150 and control unit 160. Drawing unit 150 includes electron lens barrel 102 and drawing chamber 103. Inside electron lens barrel 102, an electron gun 201, an illumination lens 202, a blanking deflector (blanker) 212, a blanking aperture 214, a first shaping aperture 203, a projection lens 204, a shaping deflector 205, a second shaping aperture 206, an objective lens 207, a main deflector 208, a sub-deflector 209, and a sub-sub-deflector 216 are arranged.

[0012] An XY stage 105 that is movable at least in the XY directions is disposed in the pattern writing chamber 103. A sample 101 (substrate) coated with resist and to be patterned is disposed on the XY stage 105. The sample 101 includes a mask for exposure to manufacture a semiconductor device, a silicon wafer, and the like. The mask includes a mask blank.

[0013] The control unit 160 has a control computer 110, a memory 112, a deflection control circuit 120, DAC (digital-analog converter) amplifiers 130, 132, 134, 136, and 138 (deflection amplifiers), and storage devices 140 and 142 such as magnetic disk devices. The control computer 110, the memory 112, the deflection control circuit 120, and the storage devices 140 and 142 are connected to each other via a bus (not shown).

[0014] The deflection control circuit 120 is connected to DAC amplifiers 130, 132, 134, 136, and 138. The DAC amplifier 130 is connected to a blanking deflector 212. The DAC amplifier 132 is connected to a sub-deflector 209. The DAC amplifier 134 is connected to a main deflector 208. The DAC amplifier 136 is connected to a sub-sub-deflector 216. The DAC amplifier 138 is connected to a shaping deflector 205.

[0015] The control computer 110 includes a shot data generation unit 50, a shot position correction unit 52, and a writing control unit 54. Each function of the shot data generation unit 50, the shot position correction unit 52, and the writing control unit 54 may be configured by software or hardware. The calculation results by the control computer 110 are stored in the memory 112 each time.

[0016] Fig. 2 is a conceptual diagram for explaining a deflection region. In Fig. 2, the drawing region 10 of the sample 101 is virtually divided into a plurality of stripe regions 20 in a rectangular shape, for example, in the y direction, by the deflection width of the main deflector 208. The regions obtained by dividing the stripe region 20 in the x direction by the deflection width of the main deflector 208 become the deflection regions of the main deflector 208 (main deflection regions).

[0017] This main deflection region is virtually divided into a plurality of sub-fields (SF) 30 in a mesh shape, with a deflection possible size of the sub-deflector 209. Then, each SF 30 is virtually divided into a plurality of under sub-fields (here, abbreviated as "TF" for Tertiary Deflection Field, meaning the third deflection, the same applies below) 40 in a mesh shape, with a deflection possible size of the sub-sub deflector 216.

[0018] A shot figure is written at each shot position 42 of each TF 40. In this way, the three stages of deflectors that deflect the electron beam 200 form the main deflection region, SF30, and TF40 in order from the largest to the smallest, which are different in size of the deflected region.

[0019] A digital signal for blanking control is output from the deflection control circuit 120 to the DAC amplifier 130. The DAC amplifier 130 converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the blanking deflector 212. The electron beam 200 is deflected by this deflection voltage, and blanking control of each shot is performed.

[0020] A digital signal for shaping deflection is output from the deflection control circuit 120 to the DAC amplifier 138. The DAC amplifier 138 converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the deflector 205. This deflection voltage deflects the electron beam 200 to a specific position of the second shaping aperture 206, and an electron beam of desired dimensions and shape is formed.

[0021] A digital signal for main deflection control is output from the deflection control circuit 120 to the DAC amplifier 134. The DAC amplifier 134 converts the digital signal into an analog signal, amplifies it, and applies it to the main deflector 208 as a deflection voltage. The electron beam 200 is deflected by this deflection voltage, and the beam of each shot is deflected to a reference position A (for example, the center position or the lower left corner position of the corresponding SF) of a predetermined subfield (SF) virtually divided into a mesh shape. In addition, when drawing is performed while the XY stage 105 is moving continuously, the deflection voltage also includes a deflection voltage for tracking that follows the stage movement.

[0022] A digital signal for sub-deflection control is output from the deflection control circuit 120 to the DAC amplifier 132. The DAC amplifier 132 converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the sub-deflector 209. The electron beam 200 is deflected by this deflection voltage, and the beam of each shot is deflected to the reference position B of the TF 40 (for example, the center position or the lower left corner position of the corresponding TF) which is the minimum deflection area.

[0023] A digital signal for sub-deflection control is output from the deflection control circuit 120 to the DAC amplifier 136. The DAC amplifier 136 converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the sub-deflector 216. The electron beam 200 is deflected by this deflection voltage, and the beam of each shot is deflected to each shot position 42 in the TF 40.

[0024] In the drawing apparatus 100, a multiple-stage deflector is used to perform drawing processing for each stripe region 20. Here, as an example, a three-stage deflector including a main deflector 208, a sub-deflector 209, and a sub-sub-deflector 216 is used. Drawing proceeds in the x direction for the first stripe region 20 while the XY stage 105 moves continuously in, for example, the -x direction. Then, after drawing of the first stripe region 20 is completed, drawing proceeds in the same manner or in the opposite direction for the second stripe region 20. Thereafter, drawing proceeds in the same manner for the third and subsequent stripe regions 20.

[0025] The main deflector 208 sequentially deflects the electron beam 200 to the reference position A of the SF 30 so as to follow the movement of the XY stage 105. The sub-deflector 209 sequentially deflects the electron beam 200 from the reference position A of each SF 30 to the reference position B of the TF 40. The sub-sub-deflector 216 then deflects the electron beam 200 from the reference position B of each TF 40 to the shot position 42 of the beam irradiated within that TF 40.

[0026] In this way, the main deflector 208, the sub deflector 209, and the sub-sub deflector 216 have different controllable deflection amounts and different sized deflection areas. The TF 40 is controlled with the smallest deflection amount among the multiple stages of deflectors, and has the smallest deflection area among the deflection areas of these deflectors.

[0027] As mentioned above, each deflector is supplied with the output voltage from the DAC amplifier. When driving the deflector with the output voltage from the DAC amplifier, a settling time is set, and the beam is irradiated to the deflection position after the set settling time has elapsed. The longer the settling time is, the smaller the error in the deflection amount becomes, but the throughput deteriorates.

[0028] 3 shows an example of the relationship between the time elapsed since the application of a deflection voltage to the sub-deflector 209 (time elapsed since the start of deflection) and the error in the deflection amount (settling error) of the sub-deflector 209. In a range where the settling error is small, it can be assumed that the settling error changes linearly. In this example, it is assumed that the change in the settling error is linear after 30 ns has elapsed.

[0029] If the time when the settling error becomes 0 is A and the settling error after 30 ns has elapsed is B, the settling error S0(t) of the sub deflector 209 at an elapsed time t after 30 ns can be expressed by, for example, the following equation (1).

[0030]

number

[0031] Figure 4(a) shows the change in settling error over time when deflection starts at time T1 and the beam is deflected to the reference position of a certain TF 40 (the first TF 40). If the settling time is STL1 and the total shot time within this TF 40 is Shot1, the settling error within this TF 40 can be considered as the settling error E1 when STL1+Shot1 / 2 has elapsed, based on the deflection start time T1. STL1+Shot1 / 2 is the intermediate (middle) time of the shot time. The settling error X1 within the first TF 40 is expressed by equation (3), for example, using the following equation (2).

[0032]

number

[0033] ΔX in the above formula i is the deflection amount of the sub-deflector 209. i , B i is the deflection amount ΔX of the sub-deflector 209 i Because it depends on the parameter GAIN A , OFFSET A , GAIN B , OFFSET B It is expressed by a linear equation using the parameter GAIN A , OFFSET A , GAIN B , OFFSET B For example, multiple evaluation patterns are written on an evaluation substrate while changing the conditions of the settling time and shot time, and the square sum of the difference (3σ of the difference) between the written results and the calculated value under all conditions can be determined so as to be the minimum.

[0034] Figure 4(b) shows the change in the settling error over time when the beam is deflected to the reference position of the next TF 40 (the second TF 40) at time T2. If the settling time is STL2 and the total shot time in this TF 40 is Shot2, the settling error in this TF 40 is the sum of the settling error E2 when STL2+Shot2 / 2 has elapsed with time T2 as the reference, and the settling error R1 when STL1+Shot1+STL2+Shot2 / 2 has elapsed with time T1 as the reference.

[0035] The settling error R1 when STL1+Shot1+STL2+Shot2 / 2 has elapsed with respect to time T1 as the reference is the residual of the settling error in the first TF 40. The settling error X2 in the second TF 40 is expressed by the following equation (4).

[0036]

number

[0037] In this way, by adding not only the settling error at the TF 40 that shoots the beam, but also the residual of the settling error at the TFs 40 that have shot the beam in the past, it is possible to accurately estimate the deviation of the beam deflection position.

[0038] For example, when shooting a beam at the nth TF 40, if the effect of the residual settling error at the past six TFs 40, i.e., the n-1th to n-6th TFs 40, is taken into consideration, the settling error X n is expressed by the following equation (5).

[0039]

number

[0040] Data of the calculation formula (2) for calculating the amount of misalignment due to such a settling error is stored in advance in the storage unit 142. Note that the correlation information for calculating the amount of misalignment is not limited to the calculation formula, and may be any information indicating the relationship between the elapsed time for calculating the amount of misalignment and the amount of misalignment.

[0041] 5 is a flow chart for explaining the drawing method according to the present embodiment. In the shot data generating process (step S101), the shot data generating unit 50 performs a multi-stage data conversion process on the drawing data stored in the storage device 140, divides each figure pattern to be drawn into shot figures of a size that can be irradiated in one shot, and generates shot data in a format specific to the drawing device. As the shot data, for example, a figure code indicating the figure type of each shot figure, a figure size, a drawing position, and the like are defined for each shot.

[0042] In the shot time / settling time calculation process (step S102), the writing control unit 54 calculates the shot time Shot for each TF 40 from the shot data for each shot. The writing control unit 54 also obtains the amount of deflection by the sub-deflector 209 toward a reference position for each TF 40, and calculates the settling time STL of the DAC amplifier 132 based on the amount of deflection. The settling time STL is set to be longer as the amount of deflection of the sub-deflector 209 increases and the output voltage of the DAC amplifier 132 increases. For example, a relational expression between the amount of deflection of the sub-deflector 209 and a suitable settling time is prepared in advance, and the settling time is calculated using this expression.

[0043] In the positional deviation calculation step (step S103), the shot position correction unit 52 calculates the positional deviation of the shot due to the settling error for each of the multiple TFs 40 in the SF 30. The shot position correction unit 52 substitutes the deflection amount, settling time, and shot time of the sub-deflector 209 corresponding to the n-th TF 40, and the deflection amount of the sub-deflector 209 and the elapsed time since the voltage was applied to the sub-deflector 209 and the deflection started for each of the n-1th to nk-th TFs 40 (k is an integer equal to or greater than 1) into a calculation formula retrieved from the storage unit 142, and adds them up to calculate the positional deviation of the shot in the n-th TF 40.

[0044] For example, when taking into account the effect of residual settling errors for the past six TFs 40, the values ​​obtained by substituting into a formula the deflection amount, settling time, and shot time of the sub-deflector 209 corresponding to the nth TF 40 are added to the values ​​obtained by substituting into a formula the deflection amount of the sub-deflector 209 and the elapsed time since voltage was applied to the sub-deflector 209 and deflection began for each of the n-1th to n-6th TFs 40, to calculate the shot position deviation amount for the nth TF 40.

[0045] In the position correction process (step S104), the shot position correction unit 52 obtains a position after correction by subtracting the shot position deviation amount in the TF 40 to which the shot belongs, calculated in step S103, from the designed drawing position coordinates of each shot.

[0046] In the drawing step (step S105), drawing processing is performed using shot data in which the shot position has been corrected by the shot position correction unit 52. The drawing control unit 54 outputs the corrected drawing position for each shot to the deflection control circuit 120. The deflection control circuit 120 calculates deflection data for drawing at the corrected position.

[0047] The deflection control circuit 120 outputs deflection data for an irradiation time corresponding to a required irradiation amount to a DAC amplifier 130 for the blanking deflector 212. The deflection control circuit 120 outputs deflection data to a DAC amplifier 134 for the main deflector 208 so that the beam follows the movement of the XY stage 105. The deflection control circuit 120 outputs deflection data to a DAC amplifier 132 for the sub-deflector 209 that deflects the beam to a relative position in the SF 30. The deflection control circuit 120 outputs deflection data to a DAC amplifier 136 for the sub-sub-deflector 216 that deflects the beam to a relative position in the TF 40. The deflection control circuit 120 also outputs deflection data to a DAC amplifier 138 for the shaping deflector 205 so that the beam has a desired shape.

[0048] An electron beam 200 emitted from an electron gun 201 (emitter) is deflected by the blanking deflector 212 when passing through the blanking deflector 212, for example, so that in the beam ON state the electron beam 200 passes through a blanking aperture 214, and in the beam OFF state the entire beam is blocked by the blanking aperture 214. The electron beam 200 that passes through the blanking aperture 214 from the beam OFF state to the beam ON state until the beam is turned OFF constitutes one electron beam shot.

[0049] The electron beam 200 of each shot, generated by passing through the blanking deflector 212 and the blanking aperture 214, illuminates the entire first shaping aperture 203 having a rectangular hole by the illumination lens 202. Here, the electron beam 200 is first shaped into a rectangle.

[0050] The electron beam 200 of the first aperture image having passed through the first shaping aperture 203 is projected onto the second shaping aperture 206 by the projection lens 204. The first aperture image on the second shaping aperture 206 is deflected and controlled by the shaping deflector 205, making it possible to change the beam shape and dimensions (perform variable shaping). Such variable shaping is performed for each shot, and it is possible to form the beam into a different shape and dimensions for each shot.

[0051] The electron beam 200 of the second aperture image that has passed through the second shaping aperture 206 is focused by the objective lens 207, and deflected by the main deflector 208, the sub-deflector 209, and the sub-sub-deflector 216, and is irradiated onto a desired position of the sample 101 placed on the continuously moving XY stage 105. As described above, a plurality of shots of the electron beam 200 are deflected in sequence by each deflector onto the sample 101 that serves as the substrate.

[0052] As described above, according to this embodiment, the deviation amount of the shot position is calculated by considering not only the settling error of the TF 40 to be shot but also the residual of the settling error of the TF 40 that has already been shot, and the writing position is corrected by subtracting this deviation amount from the designed writing position coordinates. This shortens the settling time that can be set, improves throughput, and achieves high writing accuracy.

[0053] In the above embodiment, an example was described in which the residuals of the settling errors of the (n-1)th to the (nk)th TFs 40 were taken into consideration when calculating the shot position deviation amount due to the settling error of the nth TF 40 in one SF 30, but the value of "k" may be fixed or variable. For example, the residuals of the settling errors of all TFs 40 that have been shot in the same SF 30 may be taken into consideration.

[0054] For example, if one SF 30 contains 225 (=15×15) TFs 40, the residuals of the settling errors of the first to fourth TFs 40 are taken into consideration when calculating the amount of shot position deviation due to settling error at the fifth TF 40. The residuals of the settling errors of the first to nineteenth TFs 40 are taken into consideration when calculating the amount of shot position deviation due to settling error at the twentieth TF 40. The residuals of the settling errors of the first to nineteenth TFs 40 are taken into consideration when calculating the amount of shot position deviation due to settling error at the 225th TF 40. As the writing process in one SF 30 progresses, the amount of calculations for calculating the amount of shot position deviation gradually increases, but the amount of shot position deviation can be obtained with greater accuracy.

[0055] In a similar manner to the above embodiment, when calculating the shot position deviation amount due to the settling error in the nth SF30 in one main deflection region, the residual of the settling errors in the (n-1)th to nkth SF30 may be taken into consideration.

[0056] The present invention is not limited to the above-described embodiment, and the components can be modified and embodied in the implementation stage without departing from the gist of the invention. In addition, various inventions can be formed by appropriately combining the multiple components disclosed in the above-described embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, components from different embodiments may be appropriately combined. [Explanation of symbols]

[0057] 50 Shot data generation unit 52 Shot position correction section 54 Drawing control section 100 Drawing device 110 Control computer 150 Drawing section 160 Control section 208 Main deflector 209 Sub deflector 216 Sub-sub deflector

Claims

1. A charged particle beam lithography apparatus that uses a deflector to deflect a charged particle beam and sequentially draw patterns at a plurality of deflection positions in a sample, comprising: a shot data generating unit that converts the drawing data into shot data including each shot position and shot time of the charged particle beam; a storage unit that stores correlation information indicating a relationship between an elapsed time from a start of deflection of the deflector and a positional deviation amount of a shot position of the charged particle beam; a shot position correction unit that obtains a first positional deviation amount corresponding to a deflection position that is n-th (n is an integer equal to or greater than 2) in the pattern writing order, using a settling time of the deflector, the shot time, and the relevance information, obtains a second positional deviation amount corresponding to an (n-1)th deflection position, using an elapsed time from the start of the deflection, and the relevance information, calculates a position correction amount by adding the first positional deviation amount and the second positional deviation amount, and corrects a shot position defined by the shot data at the n-th deflection position based on the position correction amount; a drawing unit that draws a pattern by irradiating the n-th deflection position with a charged particle beam using shot data in which the shot position has been corrected; A charged particle beam writing apparatus comprising:

2. 2. The charged particle beam drawing apparatus according to claim 1, wherein the shot position correction unit obtains a third positional deviation amount corresponding to a deflection position going back to the n-ith position in the pattern drawing order (i is an integer equal to or greater than 2) by using an elapsed time from the start of the deflection and the relevance information, and calculates the position correction amount by adding the first positional deviation amount, the second positional deviation amount, and the third positional deviation amount.

3. 3. The charged particle beam drawing apparatus according to claim 1, wherein the deflector includes a plurality of stages of deflectors each having a different deflection amount.

4. A charged particle beam writing method for sequentially writing patterns at a plurality of deflection positions in a sample by deflecting a charged particle beam with a deflector, comprising: converting the drawing data into shot data including each shot position and shot time of the charged particle beam; acquiring a first positional deviation amount corresponding to a deflection position that is n-th (n is an integer of 2 or more) in a pattern writing order, using a settling time and the shot time of the deflector, and correlation information indicating a relationship between a previously obtained elapsed time from a deflection start of the deflector and a positional deviation amount of the shot position of the charged particle beam; acquiring a second positional deviation amount corresponding to a deflection position that is n-1th in a pattern writing order, using an elapsed time from the start of the deflection and the correlation information; a step of calculating a position correction amount by adding the first positional deviation amount and the second positional deviation amount, and correcting a shot position defined by the shot data at the n-th deflection position based on the position correction amount; irradiating the n-th deflection position with a charged particle beam by using the shot data with the corrected shot position to write a pattern; A charged particle beam writing method comprising the steps of:

5. 5. The charged particle beam drawing method according to claim 4, further comprising the steps of: acquiring a third positional deviation amount corresponding to a deflection position going back to the n-ith position in the pattern drawing order (i is an integer equal to or greater than 2) using an elapsed time from the start of the deflection and the correlation information; and calculating the position correction amount by adding the first positional deviation amount, the second positional deviation amount, and the third positional deviation amount.

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