Multi-charged particle beam writing system

Abstract

Provided is a multiple charged particle beam writing device capable of forming a constant electric field for pulling up secondary electrons to increase a writing precision. This writing device includes: two or more stages of objective lenses (16, 17) each of which is composed of a magnetic lens and focuses, on a substrate, a multiple charged particle beam that has passed through a limiting aperture member (8); three or more correction lenses (54, 40, 60) that correct an image formation state of the multiple charged particle beam on the substrate; and an electric field control electrode (70) for forming an electric field between the substrate and the electric field control electrode by applying a constant positive voltage to the substrate. The two or more stages of objective lenses (16, 17) include a first objective lens (16) and a second objective lens (17) disposed on the most downstream side in the travel direction of the multiple charged particle beam. The three or more correction lenses (54, 40, 60) are disposed on the upstream side of the lens magnetic field of the second objective lens (17) in the travel direction of the multiple charged particle beam.

Description

[Technical field]

[0001] The present invention relates to a multi-charged particle beam writing apparatus. [Background technology]

[0002] As LSIs become more highly integrated, the circuit line width required for semiconductor devices is becoming finer year by year. To form the desired circuit pattern on a semiconductor device, a method is adopted in which a high-precision master pattern formed on quartz is reduced and transferred onto a wafer using a reduction projection exposure apparatus. To create the high-precision master pattern, a technique known as electron beam lithography is used, in which a resist is exposed to light by an electron beam drawing apparatus to form a pattern.

[0003] Development of electron beam lithography devices using multiple beams is underway to replace the conventional single-beam lithography devices that deflect one beam and irradiate the required location on a sample. By using multiple beams, more beams can be irradiated than when lithography is performed with a single electron beam, so throughput can be significantly improved. In a multi-beam lithography device, for example, an electron beam emitted from an electron source is passed through a shaping aperture array member with multiple openings to form multiple beams, blanking control is performed for each beam on a blanking aperture array substrate, and the unblocked beams are reduced in size by an optical system and irradiated onto a sample placed on a movable stage.

[0004] In an electron beam lithography system, the beam of each shot is focused on the sample by an objective lens, and the position of the multi-beam array image in the optical axis direction (imaging height) is corrected by dynamically correcting the focus during lithography (dynamic focusing) using, for example, an electrostatic lens to correspond to the unevenness of the sample surface. Here, the optical axis means the central axis of the optical system from when the electron beam is emitted until it is irradiated on the sample. However, when dynamic focusing is performed, rotation and magnification fluctuations occur in the beam array image on the sample, degrading the lithography position accuracy. Therefore, it is necessary to minimize the rotation and magnification fluctuations of the beam array image that depend on dynamic focusing.

[0005] In order to suppress rotation and magnification fluctuation of the beam image due to dynamic focus, a multi-beam drawing device has been proposed in which three electrostatic lenses are provided and at least one electrostatic lens is disposed in the lens magnetic field of each stage of two stages of objective lenses (see, for example, Patent Document 1).

[0006] When an electron beam is irradiated onto a sample, secondary electrons are generated from the sample. These secondary electrons return to the sample surface and charge a wide area of ​​the resist on the sample surface, which can cause the electron beam to be irradiated at a position other than the intended position.

[0007] A technique has been proposed to improve the accuracy of correcting beam position fluctuations caused by resist charging by forming an electric field that pushes secondary electrons downward (toward the sample surface) and returning the secondary electrons to the vicinity of the secondary electron generation position (beam irradiation position) to limit the charged area (see, for example, Patent Document 2). However, with this technique, the amount of charge on the resist surface increases, so there is a limit to how much the accuracy of the beam irradiation position can be improved. In general, the finer the pattern, the lower the sensitivity of the corresponding resist tends to be. Therefore, as the pattern becomes finer, the amount of beam irradiation on the resist increases, and the amount of resist charge increases, making it difficult to achieve the required position accuracy.

[0008] The electrostatic lens is operated in a positive voltage range relative to the sample surface (see, for example, Patent Document 3). By using this technology, a pulling electric field is formed that guides secondary electrons upward from the sample surface, and the amount of charge on the resist can be reduced.

[0009] However, with electrostatic lenses, the applied voltage changes depending on the height of the sample surface during writing, so the pull-up electric field does not remain constant, causing changes in the amount of charge on the resist, which is a problem that prevents improvements in the accuracy of the beam irradiation position over the entire writing area.

[0010] [Patent Document 1] JP 2013-197289 A [Patent Document 2] JP 2021-180224 A [Patent Document 3] JP 2013-191841 A Summary of the Invention

[0011] An object of the present invention is to provide a multi-charged particle beam drawing apparatus capable of forming a constant electric field for lifting up secondary electrons and improving drawing accuracy.

[0012] According to one aspect of the present invention, a multi-charged particle beam drawing apparatus includes a plurality of blankers for blanking and deflecting each beam of a multi-charged particle beam, a limiting aperture member for blocking a beam of the multi-charged particle beam that is deflected by the blanker to be in a beam-off state, two or more stages of objective lenses each consisting of a magnetic lens for focusing the multi-charged particle beam that has passed through the limiting aperture member on a substrate, three or more correction lenses for correcting an imaging state of the multi-charged particle beam on the substrate, and an electric field control electrode to which a positive constant voltage is applied with respect to the substrate and for forming an electric field between the multi-charged particle beam and the substrate, the two or more stages of objective lenses including a first objective lens and a second objective lens disposed at the most downstream side in the traveling direction of the multi-charged particle beam, and the three or more correction lenses are disposed at the upstream side in the traveling direction of the multi-charged particle beam from the lens magnetic field of the second objective lens.

[0013] According to the present invention, a constant electric field that lifts up secondary electrons can be formed, thereby improving drawing accuracy. [Brief description of the drawings]

[0014] [Figure 1] 1 is a schematic diagram of a multi-charged particle beam writing apparatus according to an embodiment of the present invention; [Diagram 2] FIG. 2 is a schematic diagram of a shaped aperture array substrate. [Diagram 3] 3A to 3C are diagrams showing the configuration of the electric field control electrode. [Figure 4] 4A to 4C are diagrams showing the configuration of an acceleration lens. [Diagram 5] FIG. 13 is a schematic diagram of a multi-charged particle beam writing apparatus according to another embodiment. [Figure 6] FIG. 13 is a schematic diagram of a multi-charged particle beam writing apparatus according to another embodiment. [Figure 7] 1 is a schematic diagram of a multi-charged particle beam writing apparatus according to another embodiment. [Figure 8] FIG. 13 is a schematic diagram of a multi-charged particle beam writing apparatus according to another embodiment. [Figure 9] FIG. 13 is a schematic diagram of a multi-charged particle beam writing apparatus according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0016] 1 is a schematic diagram of a multi-charged particle beam writing apparatus according to an embodiment of the present invention. In this embodiment, a configuration using an electron beam as an example of a charged particle beam will be described. However, the charged particle beam is not limited to an electron beam, and may be another charged particle beam such as an ion beam.

[0017] This drawing apparatus includes a drawing unit W that irradiates an electron beam onto a substrate 24 as a drawing target to draw a desired pattern, and a control unit C that controls the operation of the drawing unit W.

[0018] The drawing unit W has an electron optical column 2 and a drawing chamber 20. Provided within the electron optical column 2 are an electron source 4, an illumination lens 6, a shaping aperture array substrate 8, a blanking aperture array substrate 10, an acceleration lens 50, a limiting aperture member 14, two-stage objective lenses 16 and 17, a magnetic field correction lens 40, an electrostatic correction lens 60, and an electric field control electrode 70. The objective lenses 16 and 17 are magnetic field lenses.

[0019] Here, a "stage" of an objective lens means that one image is formed. In many cases, one stage of an objective lens is composed of one lens, but in order to reduce aberration and distortion, one stage of an objective lens may also be composed of two or more closely spaced magnetic lenses (i.e., one image is formed using two or more closely spaced magnetic lenses).

[0020] The acceleration lens 50 is disposed between the blanking aperture array substrate 10 and the objective lens 16. The acceleration lens 50 is an electrostatic lens composed of multiple rotationally symmetric electrodes, and the electrode potential changes between an intermediate potential on the upstream side and a ground potential on the downstream side in the beam traveling direction.

[0021] The limiting aperture member 14 is disposed between the acceleration lens 50 and the objective lens 16, but may be disposed between the objective lens 16 and the objective lens 17. The objective lens 17 is disposed on the most downstream side in the beam traveling direction among a plurality of objective lenses provided in the drawing apparatus. The objective lens 16 is disposed on the upstream side in the beam traveling direction of the objective lens 17. Due to such a positional relationship, the objective lens 16 may be called the upper objective lens, and the objective lens 17 may be called the lower objective lens. The objective lens 17 may also be called the final objective lens. The electrostatic correction lens 60 is disposed within the lens magnetic field (i.e., in the magnetic field, in the magnetic field) of the objective lens 16, which is composed of a magnetic lens.

[0022] The objective lens's magnetic field refers to an area with high magnetic flux density, for example, the space surrounded by the magnetic poles of the objective lens. The objective lens's magnetic field (axial magnetic flux density) attenuates as it moves away from the objective lens's magnetic poles. The axial magnetic flux density is usually at its maximum on the optical axis near the middle of a pair of magnetic poles (two electrodes) of the objective lens. Empirically, an area where the axial magnetic flux density is greater than, for example, 1 / 10 of the maximum value, or an area where the magnetic flux density is at a minimum, can be considered "inside the magnetic field."

[0023] In addition, in order to reduce aberration and distortion, one objective lens may be composed of two or more adjacent magnetic lenses. In such cases, even if there is a point between the adjacent magnetic lenses that make up a single objective lens where the magnetic flux density is 1 / 10 or less or is extremely small, this is not considered to be the boundary between inside and outside the lens magnetic field of the objective lens, but is considered to be "inside the magnetic field."

[0024] The electrostatic correction lens 60 generates a small rotationally symmetric electric field to correct the imaging state of the multi-beam. For example, the electrostatic correction lens 60 is composed of a cylindrical electrode, and a voltage for correction is applied to it. Cylindrical earth electrodes may be placed in front of and behind the electrode to which the voltage is applied.

[0025] In addition, a configuration in which a cylindrical or ring-shaped electrode is divided (for example, divided into an 8-pole deflector) and voltages that generate a focusing electric field (rotationally symmetric electric field), a deflecting electric field, a multipole electric field, etc. are added and applied to this electrode group, thereby combining the functions of a lens, a deflector, a multipole, etc., also generates an electric field that has a lens effect, and therefore such an electrode group is also included in a single electrostatic correction lens.

[0026] The magnetic field correction lens 40 is disposed upstream of the objective lenses 16 and 17, which are magnetic lenses, outside the lens magnetic field. The magnetic field (axial magnetic flux density) of the magnetic objective lens attenuates with distance from the objective lens magnetic pole. Empirically, the area where the axial magnetic flux density is 1 / 10 or less of its maximum value can be regarded as "outside the magnetic field."

[0027] In this embodiment, the magnetic field correction lens 40 is disposed between the acceleration lens 50 and the objective lens 16, but the position of the magnetic field correction lens 40 may be outside the magnetic fields of the objective lenses 16, 17 and downstream of the blanking aperture array substrate 10. For example, a coil may be disposed to surround the acceleration lens 50, and this may serve as the magnetic field correction lens 40.

[0028] The magnetic field correction lens 40 generates a small rotationally symmetric magnetic field to correct the imaging state. For example, the magnetic field correction lens 40 is a circular coil or a solenoid coil with the beam optical axis as its central axis, through which a current for correction is passed. The coil may be surrounded by a magnetic material such as ferrite.

[0029] An XY stage 22 is disposed in the pattern writing chamber 20. A substrate 24 to be patterned is placed on the XY stage 22. The substrate 24 to be patterned is, for example, a mask blank or a semiconductor substrate (silicon wafer).

[0030] An electron beam 30 emitted from an electron source 4 illuminates a shaping aperture array substrate 8 almost perpendicularly via an illumination lens 6. FIG. 2 is a conceptual diagram showing the configuration of a shaping aperture array substrate 8. In the shaping aperture array substrate 8, openings 80 are formed in a matrix of m columns (y direction) by n columns (x direction) (m, n≧2) at a predetermined arrangement pitch. For example, 512 columns by 512 columns of openings 80 are formed. Each opening 80 is formed as a rectangle of the same dimensions. Each opening 80 may be a circle of the same diameter.

[0031] The electron beam 30 illuminates an area including all the openings 80 of the shaping aperture array substrate 8. A portion of the electron beam 30 passes through each of the multiple openings 80, thereby forming a multi-beam 30M as shown in FIG.

[0032] Through holes are formed in the blanking aperture array substrate 10 in accordance with the positions of the openings 80 of the shaping aperture array substrate 8, and blankers consisting of a pair of two electrodes are disposed in each through hole. The multi-beams 30M passing through each through hole are deflected independently by a voltage applied to the blanker. Each beam is blanked by this deflection. In this manner, the blanking aperture array substrate 10 performs blanking deflection on each beam of the multi-beams 30M that have passed through the multiple openings 80 of the shaping aperture array substrate 8.

[0033] An electric field generated by the acceleration lens 50 acts as a focusing field on the multi-beams 30M that have passed through the blanking aperture array substrate 10. The acceleration lens 50 reduces the size and arrangement pitch of each beam while increasing the acceleration energy of the multi-beams 30M, forming a crossover CO1 slightly upstream of the objective lens 16. The limiting aperture member 14 is disposed so that the center of the opening formed in the limiting aperture member 14 approximately coincides with the crossover CO1. Here, the electron beam deflected by the blanker of the blanking aperture array substrate 10 has its trajectory displaced and is no longer positioned at the opening of the limiting aperture member 14, and is blocked by the limiting aperture member 14. On the other hand, the electron beam that has not been deflected by the blanker of the blanking aperture array substrate 10 passes through the opening of the limiting aperture member 14.

[0034] In this way, the limiting aperture member 14 blocks each electron beam deflected to a beam OFF state by the blanker of the blanking aperture array substrate 10. Then, the beam that passes through the limiting aperture member 14 from when the beam is turned ON until when the beam is turned OFF becomes the electron beam for one shot.

[0035] The upper objective lens 16 acts on the multi-beam 30M that has passed through the limiting aperture member 14, forming a reduced intermediate image IS1 of the multiple openings 80 of the shaping aperture array substrate 8, and forming a crossover CO2. The lower objective lens 17 reduces the intermediate image IS1, forming an image (beam array image) IS2 of the multiple openings 80 of the shaping aperture array substrate 8 at a desired reduction ratio on the surface of the substrate 24. The reduction ratio is the reciprocal of the magnification, and is, for example, the ratio between the size (or pitch) of the electron beam formed by each of the multiple openings 80 of the shaping aperture array substrate 8 passing through a portion of the electron beam 30, and the size (or pitch) of the image formed on the surface of the substrate 24.

[0036] By using two stages of objective lenses, a high reduction ratio (for example, a magnification of about 1 / 200) can be achieved while also ensuring a distance (working distance) between the underside of the final lens (objective lens 17) and substrate 24 that allows the substrate 24 to move.

[0037] The electron beams (all of the multi-beams) that have passed through the limiting aperture member 14 are deflected in the same direction by a deflector (not shown) and irradiated onto the substrate 24. The deflector (not shown) may be disposed downstream of the blanking aperture array substrate 10, but disposing it downstream of the upper objective lens 16 has the advantage of reducing distortion and aberration. When the XY stage 22 moves continuously, the beam irradiation position is deflected so as to follow the movement of the XY stage 22. Also, the XY stage 22 moves and the drawing position changes each time, and the height of the substrate 24 surface irradiated with the multi-beams changes. Therefore, the defocus of the multi-beams is dynamically corrected (dynamic focus) during drawing by the electrostatic correction lens 54, the magnetic field correction lens 40, and the electrostatic correction lens 60 in the acceleration lens 50 described later.

[0038] The multiple beams irradiated at one time are ideally arranged at a pitch obtained by dividing the arrangement pitch of the multiple openings 80 in the shaping aperture array substrate 8 by the desired reduction ratio described above (i.e., multiplying by the magnification). This drawing device performs drawing operations using a raster scan method in which shot beams are continuously irradiated in sequence, and when drawing a desired pattern, the beams required according to the pattern are turned on by blanking control.

[0039] The electric field control electrode 70 generates an electric field of constant strength on the surface of the substrate 24 during drawing, and accelerates secondary electrons generated from the substrate 24 upstream. For example, the substrate 24 is set to earth potential, and a positive voltage Vs is applied to the electric field control electrode 70, and this applied voltage is kept constant during drawing. Since the secondary electrons have a negative charge, they are attracted from the substrate 24 toward the electric field control electrode 70. By keeping the applied voltage constant, the electric field strength becomes constant.

[0040] The electric field control electrode 70 has an opening through which the beam passes. In order to suppress beam aberration and distortion caused by the electric field generated by the electric field control electrode 70, the electric field control electrode 70 has an axially symmetric shape centered on the beam optical axis, and is preferably a circular ring-shaped flat plate as shown in Fig. 3A or a cylindrical shape as shown in Fig. 3B.

[0041] The location of the electric field control electrode 70 is not particularly limited as long as it can control the electric field on the surface of the substrate 24, but the electric field control is better the closer it is to the substrate 24. For example, the electric field control electrode 70 is placed at about the same height as the magnetic pole (pole piece) of the objective lens 17 or between the magnetic pole and the substrate 24, and is within the lens magnetic field of the objective lens 17 or downstream of the lens magnetic field. Fig. 3A shows an example in which the electric field control electrode 70 is placed at a height slightly downstream of the downstream magnetic pole 17a of the objective lens 17.

[0042] In order to obtain a sufficient imaging reduction ratio, the magnetic pole of the objective lens 17 is disposed close to the substrate 24. Therefore, by disposing the electric field control electrode 70 at approximately the same height as the magnetic pole of the objective lens 17 or between the magnetic pole and the substrate 24, in many cases, the objective lens 17 is disposed within 20 mm from the surface of the substrate 24.

[0043] 3C, a ground electrode 72 having the same potential as the substrate 24 may be provided downstream of the electric field control electrode 70. By providing the ground electrode 72, the region of the electric field extending from the electric field control electrode 70 to the substrate 24 can be limited to the vicinity of the beam optical axis. By limiting the electric field region, it is possible to suppress fluctuations in the beam position accompanying movement of the substrate 24. When the inner diameter of the downstream magnetic pole 17a of the objective lens 17 is small, the electric field control electrode 70 may be disposed upstream of the downstream magnetic pole 17a, and the downstream magnetic pole 17a may be given the function of the above-mentioned ground electrode 72.

[0044] A pattern for measuring the degree of misalignment due to resist charging is drawn by sequentially changing the applied voltage, the degree of misalignment is evaluated from the drawing result, and the applied voltage with the least degree of misalignment is selected, thereby determining the voltage Vs to be applied to the electric field control electrode 70. As a method for evaluating the degree of misalignment using a drawing pattern, the methods described in JP 2009-260250 A and JP 2021-180224 A can be used.

[0045] The applied voltage that minimizes the degree of positional deviation due to resist charging varies depending on the acceleration voltage of the electron beam, the configuration of the objective lens, the electric field control electrode 70 and the surrounding structure, and the like, but is usually about 10V to 200V.

[0046] The control unit C has a control computer 32 and a control circuit 34. The control computer 32 performs multiple stages of data conversion processing on the drawing data to generate shot data specific to the device, and outputs it to the control circuit 34. The shot data defines the dose and irradiation position coordinates of each shot. The control circuit 34 calculates the irradiation time by dividing the dose of each shot by the current density, and applies a deflection voltage to the corresponding blanker of the blanking aperture array substrate 10 so that the beam is turned on for the calculated irradiation time when the corresponding shot is performed.

[0047] The control computer 32 holds data on a relational expression that links the excitation amounts (applied voltage for the electrostatic correction lenses, and excitation current for the magnetic field correction lenses) of the electrostatic correction lenses 54, 60, and 40 in the acceleration lens 50, which will be described later, and calculates the excitation amount of each correction lens using this relational expression. The control circuit 34 controls the excitation amounts of the electrostatic correction lenses 54, 60 and the magnetic field correction lens 40 based on the calculation results.

[0048] During drawing, the control circuit 34 applies a constant voltage Vs to the electric field control electrode 70 to form a secondary electron lift-up electric field on the surface of the substrate 24 .

[0049] 4A, the acceleration lens 50 has a plurality of cylindrical or ring-shaped electrodes 51, 52, and 53. The same voltage (potential) as that of the shaping aperture array substrate 8 and the blanking aperture array substrate 10 is applied to the intermediate potential electrode 51 located on the upstream side. A ground potential is applied to the earth electrode 52 located on the downstream side. For example, when accelerating a negatively charged electron beam, −45 kV is applied to the intermediate potential electrode 51, and 0 V is applied to the earth electrode 52.

[0050] A voltage optimized to reduce aberration and distortion within a range in which the potential difference between adjacent electrodes does not exceed the discharge withstand voltage is applied to the multiple electrodes 53 located between the intermediate potential electrode 51 and the earth electrode 52. Normally, the intermediate potential electrode 51 and the earth electrode 52 are longer (in the beam travel direction) than the electrode 53.

[0051] In this embodiment, a part of the electrodes of the acceleration lens 50 is made to function as an electrostatic correction lens that corrects the imaging state of the multi-beams.

[0052] 4B, for example, the earth electrode 52 is divided into two in the cylindrical axis direction, and a correction voltage is applied to the upstream earth electrode 52 to operate it as an electrostatic correction lens 54. When not used to correct the imaging state of the multi-beams, an earth potential is applied.

[0053] Alternatively, as shown in FIG. 4C, a voltage for the acceleration lens and a correction voltage may be added and applied to at least one of the electrodes 53 to operate as an electrostatic correction lens 54.

[0054] The beam acceleration capability of the acceleration lens 50 is determined by the potential at the entrance and exit of the acceleration lens. In the configurations shown in Figures 4B and 4C, the most upstream entrance electrode potential and the most downstream exit electrode potential are the same as those in the configuration shown in Figure 4A, so even if a correction voltage is added to the applied voltage of some of the electrodes to operate as an electrostatic correction lens 54, the beam acceleration capability does not change.

[0055] In addition, a group of electrodes that generates rotationally symmetric electric field components, such as a configuration in which a cylindrical or ring-shaped electrode is divided (for example, into an 8-pole deflector) and voltages that generate a rotationally symmetric electric field (having focusing and acceleration effects), a deflection electric field, a multipole electric field, etc. are added and applied to this group of electrodes, is also considered to be one electrode that constitutes the acceleration lens.

[0056] When a correction voltage is applied to the electrode that operates as the electrostatic correction lens 54, the total lens effect (beam focusing force) of the acceleration lens and the electrostatic correction lens changes. As a result, the imaging height and magnification of the intermediate image IS1 change. Since the objective lens 17 in the subsequent stage reduces and images the intermediate image IS1, the change in imaging height caused by the intermediate image IS1 is reduced, and the change in imaging height of the beam array image IS2 on the surface of the substrate 24 becomes small. In other words, the electrostatic correction lens 54 has a certain degree of imaging height correction sensitivity, but the sensitivity is low. The change in magnification (magnification ratio) caused by the intermediate image IS1 is directly transmitted to the change in magnification of the beam array image IS2 regardless of the imaging magnification of the objective lens 17 in the subsequent stage, so the magnification correction sensitivity of the electrostatic correction lens 54 is high. Since the combination of the electrostatic lens and the electrostatic correction lens does not cause image rotation, the rotation correction sensitivity of the electrostatic correction lens 54 is extremely low.

[0057] As described above, the electrostatic correction lens 54, which also serves as an electrode for the acceleration lens 50, has high magnification correction sensitivity, low image height correction sensitivity, and extremely low rotation correction sensitivity.

[0058] An electrostatic lens placed in the magnetic field of an objective lens (magnetic lens) changes the energy of the beam inside the electrostatic lens, changing the focusing effect that the beam receives from the magnetic lens, thereby changing the imaging height. This change in focusing effect also causes a change in magnification. Rotation does not normally occur with an electrostatic lens alone, but when placed in the lens magnetic field, the rotation also changes due to the energy change through the magnetic lens action. Here, the magnetic field generated by the objective lens to focus the beam is extremely strong, so even a small change in energy due to a small change in the applied voltage of the electrostatic lens causes a large change in the focusing effect and rotation effect of the entire lens magnetic field.

[0059] Therefore, the image height correction sensitivity and magnification correction sensitivity of the electrostatic correction lens 60 with respect to the intermediate image IS1 are The positive sensitivity and rotation correction sensitivity are high. However, because the final stage objective lens 17 reduces and images the intermediate image IS1, the change in the height direction is reduced. As a result, the sensitivity is low, although it has a certain degree of sensitivity for image height correction for the beam array image IS2 on the surface of the substrate 24. However, the magnification change (magnification ratio) and rotation remain unchanged. Therefore, the electrostatic correction lens 60 arranged within the lens magnetic field of the objective lens 16 has low correction sensitivity for image height, but high correction sensitivity for magnification and rotation.

[0060] The magnetic field correction lens has the effect of rotating the beam image (rotation effect), and this effect occurs regardless of whether the position of the magnetic field correction lens in the optical axis direction is inside or outside the magnetic field of the objective lens. The rotation of the image is a simple addition of the rotation effect of the objective lens magnetic field and the rotation effect of the magnetic field of the magnetic field correction lens, and even if the two magnetic fields overlap, no synergistic effect (a rotation effect proportional to the product of the two magnetic fields) occurs.

[0061] When the magnetic field correction lens is placed inside the lens magnetic field, the sensitivity of the image height correction increases, and the magnification correction effect also increases accordingly. Because the focusing force of the lens magnetic field is proportional to the square of the axial magnetic flux density, when the magnetic field of the objective lens and the magnetic field of the magnetic field correction lens overlap in the optical axis direction, a synergistic effect (a focusing effect proportional to the product of the two magnetic fields) occurs, and a large change in focusing force is obtained for a small change in the magnetic field of the correction lens. On the other hand, when the magnetic field correction lens is placed outside the lens magnetic field, the change in focusing force becomes very small, and the correction sensitivity of the image height and magnification becomes very low.

[0062] Therefore, the magnetic field correction lens 40 arranged outside the lens magnetic field as in this embodiment has the characteristics that the correction sensitivity of the image height and magnification is very low, but the rotation correction sensitivity is high.

[0063] In this way, the electrostatic correction lens 54, which also serves as an electrode for the acceleration lens 50, the electrostatic correction lens 60, which is placed within the lens magnetic field of the objective lens 16, and the magnetic correction lens 40, which is placed upstream of the objective lenses 16 and 17 and outside the lens magnetic field, each have different correction characteristics (the ratios of the image height correction sensitivity, magnification correction sensitivity, and rotation correction sensitivity are different), so by setting the mutual relationship between the excitation amounts (applied voltage, excitation current) of these three correction lenses and controlling them in conjunction with an appropriate relational equation, the following imaging state can be corrected. The imaging height is changed in response to variations in the substrate surface height, without changing the magnification or rotating the microscope. The substrate surface height is kept constant, there is no rotation, and the imaging height remains unchanged, but the magnification is changed. The substrate surface height is kept constant, the imaging height and magnification are constant, and the rotation is changed.

[0064] Of the three types of image correction, the first type is used for focus correction (dynamic focus) during imaging to accommodate the unevenness of the sample surface, the second type can be used for fine adjustment of magnification, and the third type can be used for fine adjustment of rotation.

[0065] The relational equation for the linkage of the excitation amount in correcting the imaging state is different for each of the three adjustment patterns. The relational equation for the excitation amount can be adjusted with sufficient accuracy if it is a first-order or higher polynomial of the adjustment amount (imaging height, magnification, rotation). The coefficients of the polynomial are found by trajectory simulation. The coefficients may be calculated based on the dependence of the imaging height, magnification, and rotation on the excitation amount, which are actually measured.

[0066] Furthermore, according to this embodiment, as described above, the electric field control electrode 70 forms an electric field of constant strength on the substrate 24 during drawing in a direction that prevents secondary electrons from returning to the substrate 24, thereby suppressing changes in the amount of charge on the resist and improving drawing accuracy.

[0067] As in the configuration of a conventional correction lens (see, for example, JP 2013-197289 A), when an electrostatic correction lens is to be placed in the magnetic field of the objective lens 17 closer to the sample, there is a competition for space with the electric field control electrode 70, which may result in a problem that either the electric field control electrode 70 or the electrostatic correction lens cannot be placed. Or, even if it is possible to place them, the electric field control electrode 70 and the electrostatic correction lens are placed very close to each other, and the electric field of the electrostatic correction lens, which changes during drawing, reaches the substrate 24, making it impossible to maintain a constant intensity of the electric field during drawing, resulting in a problem of degrading drawing accuracy. Furthermore, during drawing operation, if the voltage (potential) of the electrode placed upstream of the electric field control electrode 70 and the electrostatic correction lens electrode in the magnetic field of the objective lens 17 becomes lower, secondary electrons from the substrate 24 are decelerated near the boundary between the two electrodes and remain in the vicinity of the beam orbit at a high density, and the Coulomb force from the secondary electrons that remain changes the beam orbit, resulting in a problem of degrading drawing accuracy. However, in this embodiment, all correction lenses are positioned upstream of the magnetic field of the final objective lens, so such a problem does not occur, and the electric field on the substrate 24 can be maintained at a constant strength during drawing, while the imaging state can be corrected by the focus correction lenses, thereby improving drawing accuracy.

[0068] In the above embodiment, the electric field control electrode 70 may be at earth potential, a negative voltage may be applied to the substrate 24, and the applied voltage may be kept constant during drawing to form an electric field for pulling up secondary electrons. The formed electric field attracts secondary electrons from the substrate 24 toward the electric field control electrode 70 (upstream direction).

[0069] Alternatively, a constant negative voltage may be applied to the substrate 24, and the downstream magnetic pole 17a of the objective lens 17 may be set to earth potential to function as an electric field control electrode.

[0070] The position of the magnetic field correction lens 40 is not limited to being located upstream of the objective lenses 16 and 17, outside the lens magnetic field, but may be located between the two stages of objective lenses 16 and 17, outside the lens magnetic field, as shown in FIG.

[0071] For example, when the excitation directions (directions of the focusing magnetic field) of the two objective lenses 16, 17 are opposite to each other, a location where the magnetic flux density becomes 0 is generated between the two lenses, and the magnetic field correction lens 40 is disposed in the vicinity of that location.

[0072] Even if the excitation direction of the two objective lenses 16, 17 is the same, there is often a region between them where the magnetic flux density is sufficiently attenuated (for example, a region where the axial magnetic flux density is 1 / 10 or less of the maximum value), so a magnetic field correction lens 40 is placed in that vicinity.

[0073] In the imaging device shown in FIG. 1, the electrostatic correction lens 60 is disposed within the lens magnetic field of the objective lens 16. However, as shown in FIG. 6, the electrostatic correction lens 60 may be omitted and a magnetic field correction lens 42 may be disposed within the lens magnetic field of the objective lens 16.

[0074] The magnetic field correction lens disposed in the magnetic field of the objective lens is an air-core circular coil or solenoid coil, and is preferably not surrounded by a magnetic material such as ferrite so as not to disturb the magnetic field of the objective lens.

[0075] The magnetic field correction lens 42 arranged within the magnetic field of the objective lens 16 has a certain degree of image height correction sensitivity because the amount of image height correction is reduced by the subsequent objective lens 17, but the sensitivity is low. The magnification correction effect is high and not affected by the subsequent lens. In addition, the magnetic field correction lens has high rotation correction sensitivity regardless of whether it is inside or outside the magnetic field of the objective lens. In this way, the magnetic field correction lens 42 arranged within the lens magnetic field of the objective lens 16 has low image height correction sensitivity and high magnification and rotation correction sensitivity.

[0076] Therefore, by controlling the excitation amounts of the electrostatic correction lens 54 and the magnetic field correction lenses 40, 42, each of which has different correction characteristics, in conjunction with each other based on a relational expression, it is possible to correct the imaging state in the same way as in the above embodiment.

[0077] In the imaging devices shown in Figures 1, 5, and 6, the number of electrostatic correction lenses and magnetic field correction lenses and their locations are different, but various combinations are possible for the configurations of the three correction lenses used and their locations.

[0078] 7, the imaging state of the multi-beams may be corrected using electrostatic correction lenses 60, 61, and 62 arranged in the lens magnetic field of the objective lens 16. In this example, the electrodes of the acceleration lens 50 are not used as electrostatic correction lenses.

[0079] The three correction lenses arranged within the lens magnetic field of the objective lens 16 may be two electrostatic correction lenses and one magnetic field correction lens, or one electrostatic correction lens and two magnetic field correction lenses, or three magnetic field correction lenses.

[0080] As shown in FIG. 8, electrostatic correction lenses 60, 61 arranged in the lens magnetic field of the objective lens 16 may be used, and one of the electrodes of the acceleration lens 50 may be operated as an electrostatic correction lens to correct the imaging state of the multi-beam.

[0081] In the imaging apparatus shown in FIG. 8, the two correction lenses arranged in the lens magnetic field of the objective lens 16 may be one electrostatic correction lens and one magnetic field correction lens, or may be two magnetic field correction lenses.

[0082] 9, the imaging state of the multi-beam may be corrected by using electrostatic correction lenses 60, 61 arranged in the lens magnetic field of the objective lens 16, and a magnetic field correction lens 40 arranged upstream outside (between the acceleration lens 50 and the limiting aperture member 14) of the lens magnetic fields of the objective lenses 16 and 17. In this example, the electrodes of the acceleration lens 50 are not used as electrostatic correction lenses.

[0083] In the imaging apparatus shown in FIG. 9, the two correction lenses arranged in the lens magnetic field of the objective lens 16 may be one electrostatic correction lens and one magnetic field correction lens, or may be two magnetic field correction lenses.

[0084] When each correction sensitivity of the correction lens in the objective lens magnetic field is examined in detail, the correction sensitivity, except for the rotation correction sensitivity of the magnetic field correction lens, depends on the objective lens magnetic field strength (magnetic flux density) at the correction lens position and the beam trajectory value (distance from the optical axis) at the correction lens position. In addition, the dependency differs depending on which correction sensitivity (imaging height correction sensitivity, magnification correction sensitivity, or rotation correction sensitivity). Therefore, even in the lens magnetic field of the same objective lens 16, if the positions of two or three correction lenses are shifted in the beam optical axis direction, the magnetic field strength and trajectory value at each position are different, and therefore different correction sensitivities can be obtained. As a result, in the drawing apparatus shown in Figures 7, 8, and 9, the excitation amount of each correction lens is linked and controlled based on the relational expression, so that the image formation state can be corrected similarly to the drawing apparatus in Figure 1.

[0085] In addition, when multiple electrostatic correction lenses are arranged in the objective lens magnetic field, if a potential difference occurs between adjacent electrostatic correction lenses, secondary electrons may remain near the boundary between the electrostatic correction lenses, and the beam position may become unstable due to the Coulomb force caused by the remaining secondary electrons. However, when arranged in the magnetic field of the upper objective lens 16 as in the drawing apparatus shown in Figures 7, 8, and 9, secondary electrons from the substrate 24 spread and scatter after passing through the magnetic field of the lower objective lens 17, and the amount of electrons reaching the magnetic field of the upper objective lens 16 is reduced, so that the beam position instability is small and often does not become a problem. If the beam position instability becomes a problem, some or all of the correction lenses may be magnetic field correction lenses as described above.

[0086] In the imaging device shown so far, a configuration using three correction lenses has been described, but the imaging state may be corrected using three or more correction lenses.

[0087] In addition, in the drawing device shown so far, a configuration using two-stage objective lenses has been described. However, even when three or more stages of objective lenses are used, the imaging state can be corrected while forming a constant electric field that lifts up secondary electrons during drawing, thereby improving drawing accuracy.

[0088] Although the present invention has been described in detail with reference to specific embodiments, it will be apparent to those skilled in the art that various modifications can be made without departing from the spirit and scope of the invention. [Explanation of symbols]

[0089] 2 Electron optical column 4 Electron source 6 Lighting Lens 8 Molded aperture array substrate 10 Blanking aperture array board 14 Limiting aperture member 16, 17 Objective lenses 20 Drawing room 22 XY Stage 24 Substrate 40 Magnetic field correction lens 50 Acceleration Lens 60 Electrostatic correction lens 70 Electric field control electrode

Claims

1. A plurality of blankers for blanking and deflecting each beam of the multi-charged particle beam; a limiting aperture member for blocking a beam deflected by the blanker to be in a beam-off state among the multi-charged particle beams; two or more stages of objective lenses, each of which is a magnetic lens, for focusing the multi-charged particle beam that has passed through the limiting aperture member onto a substrate; three or more correction lenses for correcting an imaging state of the multi-charged particle beam on the substrate; an electric field control electrode to which a positive constant voltage is applied with respect to the substrate, and which forms an electric field between the substrate and the electric field control electrode; an acceleration lens configured by an electrostatic lens having a plurality of electrodes and accelerating the multi-charged particle beam; Equipped with the two or more stages of objective lenses include a first objective lens and a second objective lens disposed most downstream in a traveling direction of the multi-charged particle beam, The three or more correction lenses are arranged upstream of the lens magnetic field of the second objective lens in the direction of propagation of the multi-charged particle beams, and include an electrostatic correction lens that also serves as an electrode of the acceleration lens.

2. A plurality of blankers for blanking and deflecting each beam of the multi-charged particle beam; a limiting aperture member for blocking a beam deflected by the blanker to be in a beam-off state among the multi-charged particle beams; two or more stages of objective lenses, each of which is a magnetic lens, for focusing the multi-charged particle beam that has passed through the limiting aperture member onto a substrate; three or more correction lenses for correcting an imaging state of the multi-charged particle beam on the substrate; an electric field control electrode to which a positive constant voltage is applied with respect to the substrate, and which forms an electric field between the substrate and the electric field control electrode; Equipped with the two or more stages of objective lenses include a first objective lens and a second objective lens disposed most downstream in a traveling direction of the multi-charged particle beam, The three or more correction lenses are arranged upstream of the lens magnetic field of the second objective lens in the direction of propagation of the multi-charged particle beams, and include an electrostatic correction lens or a magnetic field correction lens arranged within the lens magnetic field of the first objective lens.

3. 3. The multi-charged particle beam drawing apparatus according to claim 1, wherein the electric field control electrode is arranged within a lens magnetic field of the second objective lens or downstream of the lens magnetic field of the second objective lens in a traveling direction of the multi-charged particle beam.

4. 3. The multi-charged particle beam writing apparatus according to claim 1, wherein the three or more correction lenses include a magnetic field correction lens arranged outside a lens magnetic field of the two or more stages of objective lenses.

5. 5. The multi-charged particle beam drawing apparatus according to claim 4, wherein the magnetic field correction lens is arranged upstream of the lens magnetic fields of the two or more stages of objective lenses in a traveling direction of the multi-charged particle beam, or between the lens magnetic fields of the two or more stages of objective lenses.

6. 3. The multi-charged particle beam drawing apparatus according to claim 1, wherein a mutual relationship between the excitation amounts of the three or more correction lenses is set to correct an imaging state of the multi-charged particle beam.

7. 7. The multi-charged particle beam writing apparatus according to claim 6, wherein the correction of the imaging state is a correction for changing the imaging height without changing the magnification and without rotating the beam.

8. 7. The multi-charged particle beam writing apparatus according to claim 6, wherein the correction of the imaging state is a correction for changing a magnification without rotation and without changing an imaging height.

9. 7. The multi-charged particle beam writing apparatus according to claim 6, wherein the correction of the imaging state is a correction that changes a rotation while keeping the imaging height and magnification constant.

Images