Semiconductor processing chamber and method for cleaning same - Patents.com

Abstract

The processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and the substrate support may at least partially define a processing space. The pumping liner may define an interior space fluidly connected to the processing space through a plurality of apertures in the pumping liner arranged circumferentially around the processing space. The processing chamber may further include a flow control mechanism operable to direct fluid flow from the interior space of the pumping liner into the processing space through a subset of the plurality of apertures in the pumping liner during fluid distribution from the gas distribution member to the processing space.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 879,720, filed July 29, 2019, the entire contents of which are incorporated herein by reference in their entirety for all purposes.

[0002]

[0002] The present technology relates to semiconductor processing and equipment. More specifically, the present technology relates to semiconductor processing chambers and methods for cleaning the same. [Background technology]

[0003]

[0003] Integrated circuits are made possible by processes that form intricately patterned layers of materials on a substrate surface. As device sizes continue to shrink in next generation devices, uniformity of processing conditions continues to become more important, and chamber design and system setup can play a critical role in the quality of the devices produced. Thus, there is a need for systems and methods that can be used to produce high quality devices and structures. Summary of the Invention

[0004] According to one aspect, the processing chamber may include a gas distribution member and a substrate support positioned below the gas distribution member. The gas distribution member and the substrate support may at least partially define a processing space. The gas distribution member may provide fluid access into the processing space. The processing chamber may further include a pumping liner disposed radially outward from the substrate support. The pumping liner may define a plurality of apertures disposed circumferentially around the processing space and an interior space that may be fluidly connected with the processing space through the plurality of apertures. The pumping liner may further define a gas inlet disposed radially outward from the plurality of apertures. The gas inlet may provide fluid access into the interior space of the pumping liner. The processing chamber may further include a flow control mechanism. The flow control mechanism may be operable to direct a fluid flow through the gas inlet into the interior space and thereafter into the processing space through a subset of the plurality of apertures of the pumping liner during fluid distribution from the gas distribution member to the processing space.

[0005] In some embodiments, the flow control mechanism may include a first choke plate and a second choke plate disposed within the pumping liner. The first choke plate and the second choke plate may divide an interior space of the pumping liner into a first space and a second space. The first space may be fluidly connected to the processing space through one half of the plurality of apertures. The second space may be fluidly connected to the processing chamber through the other half of the plurality of apertures. The flow control mechanism may be operable to direct a fluid flow from the first space through the processing space into the second space.

[0006] In some embodiments, the flow control mechanism can include a valve disposed downstream of the gas outlet and upstream of the exhaust, the valve can be operable to close to prevent fluid flow from an interior volume of the processing chamber or pumping liner through the gas outlet to the exhaust.

[0007] In some embodiments, the gas outlet can be a first gas outlet. The valve can be a first valve. The flow control mechanism can further include a second gas outlet and a second valve disposed downstream of the second gas outlet and upstream of the exhaust port. The gas inlet can be the first gas inlet. The pumping liner can further define a second gas inlet. The second valve can be operable to close during fluid distribution from the gas distribution member to the processing space to direct fluid flow through the second gas inlet into the interior space and thereafter through another subset of the plurality of apertures into the processing space.

[0008]

[0008] In some embodiments, the flow control mechanism may be operable to create a pressure difference between the pressure inside a first duct connecting the first gas outlet to the exhaust and the pressure inside a second duct connecting the second gas outlet to the exhaust.

[0009] In some embodiments, the pumping liner may include a first internal baffle and a second internal baffle diametrically opposed to one another. In some embodiments, the first baffle may be disposed between the gas inlet and the plurality of apertures.

[0010] In some embodiments, the pumping liner may include a first portion defining a first laterally extending portion of the pumping liner's interior space. The gas inlet may be disposed on an upper surface of the first portion. The pumping liner may further include a second portion defining a second laterally extending portion of the pumping liner's interior space. The first laterally extending portion and the second laterally extending portion may be diametrically opposed to one another. The pumping liner may further include a third portion defining a first toroidal shaped portion of the pumping liner's interior space. The first toroidal shaped portion may be disposed between the first laterally extending portion and the second laterally extending portion. The pumping liner may further include a fourth portion defining a second toroidal shaped portion of the pumping liner's interior space. The first toroidal shaped volume portion and the second toroidal shaped volume portion may be diametrically opposed to one another.

[0011] In some embodiments, the gas inlet may be a first gas inlet. The pumping liner may further define a second gas inlet disposed on an upper surface of the second portion. The flow control mechanism may be further operable to direct fluid flow through the second gas inlet into the interior volume of the pumping liner and thereafter through another subset of the plurality of apertures in the pumping liner into the processing volume during fluid distribution from the gas distribution member into the processing volume.

[0012] In some embodiments, the processing chamber may further include an annular gap around the substrate support to provide fluid access from a lower portion of the processing chamber to the processing space and the interior space of the pumping liner. In some embodiments, each aperture of the plurality of apertures may be disposed at an equal distance from two adjacent apertures of the plurality of apertures.

[0013] According to another aspect, a method for cleaning a processing chamber may include flowing a first gas through a gas distribution member of the processing chamber into a processing space at least partially defined by the gas distribution member of the processing chamber and the substrate support. The method may further include flowing a second gas through a gas inlet of a pumping liner of the processing chamber into an interior space of the pumping liner. The pumping liner may be disposed radially outward from the substrate support. The interior space may be fluidly connected to the processing space through a plurality of apertures of the pumping liner disposed circumferentially around the processing space. The method may further include flowing a portion of the second gas from the interior space of the pumping liner into the processing space through a first subset of apertures of the plurality of apertures while maintaining a flow of the first gas in the processing space. The method may further include flowing a portion of the second gas from the processing space into the interior space of the pumping liner through a second subset of apertures of the plurality of apertures.

[0014] In some embodiments, the interior space of the pumping liner may include a first space and a second space separated by a pair of choke plates. Flowing the second gas into the interior space of the pumping liner through the gas inlet of the pumping liner may include flowing the second gas into the first space through the gas inlet of the pumping liner. Flowing a portion of the second gas from the interior space of the pumping liner into the processing space may include flowing a portion of the second gas from the first space into the processing space. The portion of the second gas may be distributed throughout the processing space. Flowing a portion of the second gas from the processing space into the interior space of the pumping liner may include flowing a portion of the second gas from the processing space into the second space.

[0015] In some embodiments, the first gas can be distributed throughout the processing space with a substantially uniform concentration. In some embodiments, the first gas can be flowed at a first flow rate. The second gas can be flowed at a second flow rate that is greater than the first flow rate.

[0016] In some embodiments, the gas inlet may be a first gas inlet, and the method may further include ceasing to flow the second gas through the first gas inlet of the pumping liner into the interior volume of the pumping liner. The method may further include flowing the third gas through the second gas inlet of the pumping liner into the interior volume of the pumping liner. The method may further include flowing a portion of the third gas from the interior volume of the pumping liner into the process volume through the apertures of the second subset of the plurality of apertures. The method may further include flowing a portion of the third gas from the process volume into the interior volume of the pumping liner through the apertures of the first subset of the plurality of apertures.

[0017] In some embodiments, the method may further include flowing a third gas in an upward direction through an annular gap surrounding the substrate support toward the processing space.

[0018]

[0018] According to another aspect, a deposition method may include flowing a first gas through a gas distribution member of a processing chamber into a processing space defined at least in part by a substrate support of the processing chamber supporting a semiconductor substrate thereon and the gas distribution member. The deposition method may further include flowing the second gas through a gas inlet of a pumping liner of the processing chamber into an interior space of the pumping liner. The pumping liner may be disposed radially outward from the substrate support. The interior space of the pumping liner may be fluidly connected to the processing space through a plurality of apertures of the pumping liner disposed circumferentially around the processing space. The first gas may be flowed at a first flow rate. The second gas may be flowed at a second flow rate less than the first flow rate such that the flow of the second gas into the processing space may be substantially prevented while the first gas may be flowed from the processing space into the interior space of the pumping liner through the plurality of apertures. The pressure difference between two peripheral positions inside the processing space may be less than 0.1 Torr.

[0019] In some embodiments, the gas inlet may be a first gas inlet, and the deposition method may further include flowing a third gas into the interior space of the pumping liner through a second gas inlet of the pumping liner. The first gas inlet and the second gas inlet may be diametrically opposed to one another. The third gas may be flowed at a third flow rate less than the first flow rate, such that flow of the third gas into the processing space may be substantially prevented. The flow of the first gas, the flow of the second gas, and the flow of the third gas may collectively produce an axially symmetric pressure profile within the processing space about a central axis of the processing space.

[0020] In some embodiments, the deposition method may further include flowing a third gas in an upward direction through an annular gap surrounding the substrate support toward the processing space.

[0021]

[0021] The techniques of the present invention may provide numerous advantages over conventional systems and techniques. For example, the techniques of the present invention may clean a processing chamber significantly faster than conventional in-situ cleaning methods, thereby improving manufacturing throughput. The techniques of the present invention may also clean a processing chamber substantially uniformly. These and other embodiments, together with their many advantages and features, may be more fully described in the following description and accompanying drawings.

[0022] A further understanding of the nature and advantages of the disclosed techniques may be realized by reference to the remaining portions of the specification and the drawings. [Brief description of the drawings]

[0023] [Figure 1] 1 shows a schematic cross-sectional view of an exemplary processing chamber in accordance with an embodiment of the present technique. [Diagram 2]

[0024] 2 illustrates a schematic representation of selected chamber components of the processing chamber of FIG. 1; [Diagram 3]

[0025] 2A and 2B are schematic diagrams illustrating a right perspective view of one or more flow spaces defined by selected chamber components of the processing chamber of FIG. 1; [Figure 4]

[0026] 1 illustrates exemplary steps of a method for cleaning chamber parts of a processing chamber, in accordance with an embodiment of the present technique. [Figure 5A-5B]

[0027] 5 illustrates a schematic representation of a flow space of a processing chamber during which one or more steps of the method of FIG. 4 may be carried out. [Figure 6A-6B]

[0028] 1A and 1B are schematic diagrams illustrating a left perspective view and a partial top view, respectively, of a flow space of a processing chamber incorporating a flow control mechanism according to an embodiment of the present technique; [Figure 7]

[0029] 1 illustrates a schematic pressure profile within a processing volume of a processing chamber in accordance with an embodiment of the present technique. [Figure 8]

[0030] 1 illustrates a schematic diagram of a flow space of a processing chamber in accordance with an embodiment of the present technique. [Figure 9]

[0031] 1 illustrates exemplary steps of a method for cleaning chamber parts of a processing chamber, in accordance with an embodiment of the present technique. [Figure 10A-10B]

[0032] 10 shows a schematic representation of a flow space of a processing chamber during which one or more steps of the method of FIG. 9 may be carried out. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024]

[0033] Some drawings are included as schematics. It should be understood that the drawings are for illustrative purposes and should not be considered to scale unless expressly stated to be to scale. Furthermore, as schematics, the drawings are provided to aid in understanding and may not include all aspects or information compared to a realistic depiction and may include material that is emphasized for illustrative purposes.

[0025]

[0034] In the accompanying drawings, similar components and / or features may have the same reference numbers. Furthermore, various components of the same type may be distinguished according to the reference numbers, with a letter distinguishing between the similar components. If only a first reference number is used in this specification, the description is applicable to any of the similar components having the same first reference number, regardless of the letter.

[0026]

[0035] During the manufacture of semiconductor devices, a wafer may be delivered into a processing space of a semiconductor processing chamber to perform one or more deposition processes, such as one or more chemical vapor deposition processes. During deposition, materials deposited on the wafer, e.g., one or more deposition gases, may also be deposited on surfaces of various chamber parts exposed to the deposition gases. Thus, the processing chamber may be cleaned from time to time. Conventional chamber designs may utilize in-situ cleaning methods, in which a cleaning gas may be delivered into the processing chamber in a manner similar to the way that a deposition gas may be delivered into the processing space. Thus, the in-situ cleaning gas may clean the various chamber parts that define the processing space and chamber parts upstream of the processing space. However, such in-situ cleaning may not adequately clean the various processing chamber parts downstream of the processing space, or it may take a significant amount of time before the downstream parts are adequately cleaned, which may reduce manufacturing throughput.

[0027]

[0036] The inventive technique overcomes these problems by utilizing an ex-situ cleaning gas that may be delivered through a bypass gas inlet of a pumping liner of the processing chamber. The ex-situ cleaning gas may be delivered simultaneously with the in-situ cleaning gas. The inventive technique further utilizes one or more flow control mechanisms to regulate the flow of the ex-situ cleaning gas so that the ex-situ cleaning gas may effectively clean the processing space and various chamber parts downstream of the processing space. By performing an ex-situ clean instead of or in addition to an in-situ clean, the entire processing chamber may be efficiently cleaned, improving manufacturing throughput.

[0028]

[0037] Although the remaining disclosure routinely identifies various fluid flows for cleaning a processing chamber utilizing the disclosed technology, the technology should not be considered limited to only cleaning processes. The technology can be utilized for other processes, including but not limited to deposition, etching, etc., where a controlled and / or uniform fluid flow may be beneficial. Additionally, while an exemplary semiconductor processing chamber is described to aid in understanding the technology of the present invention, the technology should not be considered limited to cleaning only parts of a semiconductor processing chamber or to the exemplary chamber described. It should be understood that the technology of the present invention can be utilized for any type of processing chamber.

[0029]

[0038] FIG. 1 shows a schematic cross-sectional view of an exemplary processing chamber 100 according to an embodiment of the present technique. The processing chamber 100 may include a gas distribution member or showerhead 102 and a substrate support 104 positioned below the gas distribution member 102. The gas distribution member 102 and the substrate support 104 may at least partially define a processing space 106. The gas distribution member 102 may include a number of apertures configured to provide fluid access into the processing space 106. An upper part of the substrate support 104 may be or include a heater that may be configured to support and heat a substrate or wafer that may be placed on an upper surface of the substrate support 104 during processing. The processing chamber 100 may further include a pumping liner 110 disposed radially outward from the substrate support 104. The pumping liner 110 may define a number of apertures 112 disposed circumferentially around the processing space 106. The pumping liner 110 may further define an interior space 114 that may be in fluid communication with the processing space 106 via the apertures 112 .

[0030]

[0039] In some implementations, the substrate support 104 may be housed within a bottom bowl 120. A gap 122, which may be annular, may be formed between the substrate support 104 and the bottom bowl 120 to allow the substrate support 104 to move up and down within the bottom bowl 120. A purge gas, which may include an inert gas such as argon, nitrogen, etc., may be flowed into the gap 122 in an upward direction toward the processing space 106 to limit or prevent processing gases, such as deposition gases, which may be delivered from the gas distribution member 102 into the processing space 106, from flowing downward from below the top surface of the substrate support 104 and through the gap 122 into the lower portion of the processing chamber 100.

[0031]

[0040] In some embodiments, the purge gas may be delivered into the purge space 126 through a purge inlet 128 at the bottom of the processing chamber 100. A purge baffle 130 may be disposed adjacent to the purge inlet 128 to deflect the flow of the purge gas and facilitate distribution of the purge gas throughout the purge space 126. In some embodiments, the processing chamber 100 may include a single purge inlet 128 and a single purge baffle 130. In some embodiments, the processing chamber 100 may include multiple purge inlets 128 and a corresponding number of purge baffles 130. The purge gas may then flow through a number of purge equalizer holes 124 defined in the bottom bowl 120 into the gap 122 and upward toward the processing space 106. The purge gas and the processing gas may then combine at the periphery of the processing space 106 and be removed by the pumping liner 110 through the openings 112. In some embodiments, the purge equalizer holes 124 may have a common size. In some embodiments, the purge equalizer holes 124 may have a variety of sizes. For example, depending on the location of the purge equalizer holes 124 relative to the purge inlet 128, the purge equalizer holes 124 closer to the purge inlet 128 may have a smaller diameter than the purge equalizer holes 124 further from the purge inlet 128. By distributing the purge gas throughout the purge space 126 and flowing the purge gas through appropriately sized purge equalizer holes 124, an azimuthally uniform purge gas flow may be achieved. This may further promote a uniform deposition profile on the wafer.

[0032]

[0041] 2 shows a schematic perspective cross-sectional view of a portion of selected components of the processing chamber 100 to better illustrate the configuration of selected components. As shown, the apertures 112 of the pumping liner 110 may be circumferentially disposed around the inner circumference of the pumping liner 110 and may be spaced apart from each other at equal distances. Purge gas may flow upward through the gaps 122 and mix with the process gas near the edge or periphery of the substrate support 104, and flow from the processing volume 106 (not shown in FIG. 2) through the apertures 112 into the interior volume 114 of the pumping liner 110.

[0033]

[0042] FIG. 3 is a schematic illustration of a right perspective view of one or more flow spaces defined by selected chamber components of the processing chamber 100 of FIG. 1. It should be noted that the flow spaces illustrated in FIG. 3 and other subsequent flow space illustrations may represent only the interior spaces or shapes of the various chamber components that define the one or more flow spaces. Thus, for each chamber component described herein, the interior spaces or shapes may be the same, but the exterior shapes or forms may vary from embodiment to embodiment depending on how the chamber component may be integrated into the processing chamber 100 and / or combined with other chamber components and various other considerations. Additionally, for purposes of discussion, a particular chamber component may be described by reference to a flow space illustration, even if the actual chamber component is not shown in the flow space illustration.

[0034]

[0043] 3, the flow space may include a process space 106 defined by a bottom surface of the gas distribution member 102 and a top surface of the substrate support 104, and an interior space 114 of the pumping liner 110 may be fluidly connected to the process space 106 via apertures 112 in the pumping liner 110. The flow space may further include one or more foreline spaces 140 in fluid communication with and downstream of the interior space 114 of the pumping liner 110. In some embodiments, a first foreline space 140a may be connected to a first laterally extending space portion 116a of the interior space 114 of the pumping liner 110, and a second foreline space 140b may be connected to a second laterally extending space portion 116b of the interior space 114 of the pumping liner 110. The flow space may further include an exhaust space 142 in fluid communication with and downstream of the first and second foreline spaces 140a, 140b. Each of the foreline spaces 140a, 140b may be defined by a foreline connected to a gas outlet of the pumping liner 110. The exhaust space 142 may be defined by an exhaust duct that may direct a fluid flow toward the exhaust of the processing chamber 100.

[0035]

[0044] The internal space 114 of the pumping liner 110 may include a first transversely extending space portion 116a and a second transversely extending space portion 116b. The internal space 114 of the pumping liner 110 may further include two toroidal shaped space portions 118a, 118b, or a first toroidal shaped space portion 118a and a second toroidal shaped space portion 118b. The two toroidal shaped space portions 118a, 118b may be disposed between the two transversely extending space portions 116a, 116b, respectively. The two transversely extending space portions 116a, 116b may be diametrically opposed to each other. Also, the toroidal shaped space portions 118a, 118b may be diametrically opposed to each other.

[0036]

[0045] In some embodiments, the laterally extending space portions 116a, 116b may be defined by two liner portions of the pumping liner 110 that may be laterally extending, and the toroidal shaped space portions 118a, 118b may be defined by two liner portions of the pumping liner 110 that may each have a toroidal shape. However, as already mentioned above, the individual liner portions that define the toroidal shaped or laterally extending space portions 116a, 116b, 118a, 118b may not have corresponding or similar external shapes or configurations in some embodiments.

[0037]

[0046] 3, the interior space 114 of the pumping liner 110 may have an axis of symmetry passing through the center of each of the two toroidal-shaped space portions 118a, 118b and another axis of symmetry passing through the center of each of the two laterally extending space portions 116a, 116b. The laterally extending space portions 116a, 116b may be larger than the toroidal-shaped space portions 118a, 118b because the corresponding liner portions may be sized and shaped to allow the pumping liner 110 to be supported by other chamber components and / or to define one or more gas inlets and gas outlets for upstream and / or downstream fluid connection with other flow spaces of the processing chamber 100.

[0038]

[0047] To promote a uniform fluid flow profile within the processing volume 106 and to minimize any effects that the non-axisymmetric shaped interior space 114 of the pumping liner 110, or the gas inlets and outlets of the liner portions defining the laterally extending space portions 116a, 116b, may have on the fluid flow profile within the processing volume 106, in some embodiments, the pumping liner 110 may include a pair of curved baffles disposed within the liner portions defining the laterally extending space portions 116a, 116b. The two baffles are shown in FIG. 3 as two gaps 117a, 117b since there may be no fluid flow through the baffles.

[0039]

[0048] During deposition, a process gas, such as a single gas or a mixture of gases, may be flowed from the gas distribution member 102 into the process volume 106. Excess process gas may then be flowed through the apertures 112 in the pumping liner 110 into the interior volume 114 of the pumping liner 110 and then downstream through the foreline volumes 140a, 140b and various other downstream flow volumes toward the exhaust of the processing chamber 100. Deposition may occur on surfaces of various chamber components exposed to the flow of process gas.

[0040]

[0049] Upon completion of one or more deposition processes, the processing chamber 100 may be cleaned by flowing a cleaning gas into the various flow spaces to remove any materials deposited on the various chamber component surfaces. The cleaning gas may include a single gas or a mixture of gases. In some embodiments, the cleaning gas may include plasma effluents that may be generated in a remote plasma source or unit coupled to the processing chamber 100 and then flowed into the processing chamber 100. In some embodiments, the plasma effluents may be generated locally within the processing chamber 100, such as a capacitively coupled plasma generated inside the processing chamber 100. During cleaning of the processing chamber 100, a purge gas may continue to be flowed into the processing chamber 100 from the bottom of the processing chamber 100 through the annular gap 122 described above with reference to FIG. 1 to limit or prevent the cleaning gas from flowing below the substrate support 104.

[0041]

[0050] In some embodiments, the cleaning gas may be flowed into the processing chamber 100 in a manner similar to how the processing gas may be flowed into the processing chamber 100 during a deposition process. Specifically, the cleaning gas may be flowed into the processing space 106 through the gas distribution member 102, which may then be flowed into the interior space 114 of the pumping liner 110 through various downstream flow spaces toward the exhaust of the processing chamber 100. Thus, the same components and / or surfaces exposed to the processing gas may also be exposed to the cleaning gas and therefore cleaned by the cleaning gas. Cleaning the processing chamber 100 by flowing the cleaning gas into the processing space 106 through the gas distribution member 102 as described above may also be referred to as in-situ cleaning. The in-situ cleaning gas may effectively clean various chamber parts upstream of the processing space 106. However, the time associated with an in-situ cleaning cycle to adequately clean the chamber parts downstream of the processing space 106 may be long and may affect manufacturing throughput.

[0042]

[0051] In some embodiments, ex-situ cleaning may be utilized to shorten cleaning time or cleaning cycle. As shown in FIG. 3, in some embodiments, the flow space may further include a bypass space 144 in fluid communication with the interior space 114 of the pumping liner 110. The bypass space 144 may be defined by a bypass duct connected to a bypass gas inlet, or simply a gas inlet, of the pumping liner 110. The gas inlet may be disposed on an upper surface of a liner portion defining one of the laterally extending space portions 116a, 116b. The bypass space 144 and the gas inlet or bypass inlet of the pumping liner 110 may allow cleaning gas to be delivered into the interior space 114 of the pumping liner 110 or various other flow spaces (described in more detail below) to clean the processing chamber 100 while bypassing the gas distribution member 102. The cleaning gas delivered through the bypass space 144 may include a single gas or a mixture of gases and may include plasma effluents. Plasma effluents may be generated using a remote plasma source or unit and then provided into the processing chamber 100 through the bypass space 144 and the gas inlet of the pumping liner 110 to clean the processing chamber 100. Cleaning the processing chamber 100 by flowing a cleaning gas into the processing chamber 100 through the bypass gas inlet of the pumping liner 110 may also be referred to as ex-situ cleaning.

[0043]

[0052] FIG. 4 illustrates exemplary steps of a method 400 utilizing ex-situ cleaning to clean chamber components downstream of the process space 106. FIGS. 5A and 5B illustrate the method 400 in a schematic manner. In particular, similar to FIG. 3, FIGS. 5A and 5B illustrate flow spaces defined by various chamber components in a schematic manner. FIG. 5A illustrates a front view of the flow space illustrated in FIG. 3 during which one or more steps of the downstream cleaning method 400 may be performed. FIG. 5B illustrates the same front view as FIG. 5A during which one or more other steps of the downstream cleaning method 400 may be performed. A portion of the purge gas flow space or the annular gap 122 illustrated in FIG. 1 is also illustrated in FIGS. 5A and 5B. The various steps of the method 400 may be performed in any order, removed or modified.

[0044]

[0053] The method 400 may begin by flowing a first or in-situ cleaning gas 150 into the processing space 106 through the gas distribution member 102 in step 405, flowing a second gas 152 through the gap 122 surrounding the substrate support 104 in an upward direction toward the processing space 106 in step 410, and flowing a third or ex-situ cleaning gas 154 from the bypass space 144 into the interior space 114 of the pumping liner 110 through a bypass gas inlet of the pumping liner 110 in step 415.

[0045]

[0054] The first gas flow 150 may be or may include a cleaning gas flow or, more specifically, an in-situ cleaning gas flow for performing in-situ cleaning of various chamber parts. The first gas flow 150 may be continuously delivered into the processing space 106 through the gas distribution member 102. Thus, ex-situ cleaning and in-situ cleaning may be performed simultaneously in the method 400. In some embodiments, even if in-situ cleaning is not performed, the first gas flow 150 may still be maintained by flowing an inert gas through the gas distribution member 102 into the processing space 106 to prevent any of the third gas flow 154 delivered through the bypass space 144 from entering the chamber space upstream of the gas distribution member 102.

[0046]

[0055] A second gas flow 152, which may be or include a purge gas flow and may be similar or the same as the purge gas flow delivered during deposition, may also be maintained to prevent either the first gas flow 150 or the third gas flow 154 from entering the lower portion of the processing chamber 100. The third gas flow 154 may be or include a cleaning gas flow or, more specifically, an ex-situ cleaning gas flow for performing ex-situ cleaning of various chamber parts. The third gas flow 154 may continue to be delivered from the bypass space 144 into the interior space 114 of the pumping liner 110 via a bypass gas inlet of the pumping liner 110.

[0047]

[0056] 5A, the first, second, and third gases 150, 152, 154 may be flowed simultaneously, with most or substantially all of the third gas 154 simply passing through the laterally extending space portion 116a of the interior space 114 of the pumping liner 110 and entering the first foreline space 140a below the first laterally extending space portion 116 of the interior space 114 of the pumping liner 110. The third gas flow 154 may then enter the exhaust space 142 and flow toward the exhaust of the processing chamber 100. Thus, the third gas flow 154 may clean various ducts defining the first foreline space 140a and the exhaust space 142, as well as other downstream chamber components. However, because the third gas flow 154 may substantially bypass the entire interior space 114 of the pumping liner 110 and the second foreline space 140b, the pumping liner 110 and the duct defining the second foreline space 140b may not be cleaned.

[0048]

[0057] To clean the pumping liner 110, in some embodiments, the processing chamber 100 may include a flow control mechanism, such as a valve 160, disposed along the foreline act to regulate the flow of the third gas flow 154. The valve 160 may be configured to open or close to permit or prevent the third gas flow 154 through the first foreline space 140a. This may then force the third gas flow 154 to flow through the interior space 114 of the pumping liner 110 and the second foreline space 140b. Thus, in step 420, the valve 160 may be closed. As shown in FIG. 5B, the third gas flow 154 into the first foreline space 140a may then be prevented, and the third gas flow 154 may be forced to enter the interior space 114 of the pumping liner 110 and flow through the second foreline space 140b toward the exhaust, cleaning the pumping liner 110, the foreline duct defining the second foreline space 140b, and other downstream chamber components.

[0049]

[0058] In some implementations, instead of or in addition to the valve 160, other devices or mechanisms may be implemented to direct the third gas flow 154 toward the interior space 114 and the second foreline space 140b. For example, a pressure difference between the two foreline spaces 140a, 140b may be created to direct the third gas flow 154 through the interior space 114 of the pumping liner 110 to the second foreline space 140b. Specifically, the mechanism may be implemented to increase the pressure within the first foreline space 140a such that the pressure within the first foreline space 140a may be greater than the pressure within the second foreline space 140b. For example, another gas flow may be created along a duct defining the first foreline space 140a to direct a gas flow into the second foreline space 140b, thereby increasing the pressure therein. The pressure differential may force the third gas flow 154 to flow through the interior space 114 of the pumping liner 110 and the second foreline space 140b to clean the pumping liner 110, the ducts defining the second foreline space 140b, and various other downstream chamber components. In some embodiments, a pressure differential of at least about 0.5 torr, at least about 1 torr, at least about 1.5 torr, at least about 2 torr, at least about 2.5 torr, at least about 3 torr, at least about 3.5 torr, at least about 4 torr, or more may be created and / or maintained.

[0050]

[0059] By performing the steps of the method 400, various chamber parts downstream of the processing space 106, such as the pumping liner 110, downstream ducts, etc., can be cleaned by the ex-situ cleaning gas flow 154. During ex-situ cleaning, a portion of the third gas flow 154 can enter the processing space 106 from the inner space 114 through the apertures 112 of the pumping liner 110 depending on the mechanism implemented for directing the flow of the third gas 154 into the inner space 114 of the pumping liner 110. Thus, a portion of the chamber parts defining the processing space 106 can also be cleaned by the third gas flow 154. However, the concentration of the third gas flow 154 inside the processing space 106 may be low, and the third gas flow 154 may not be distributed throughout the processing space 106.

[0051]

[0060] For example, when the valve 160 may be closed, the flow of the first gas flow 150 and the second gas flow 152 from the processing volume 106 toward the interior volume 114 of the pumping liner 110 may cause a very small amount of the third gas 154 to flow into the processing volume 106 through a small number of apertures 112 in the pumping liner 110. Furthermore, the third gas flow 154 may only reach the peripheral region of the processing volume 106 near the bypass space 144, and may not reach the central region of the processing volume 106 or the peripheral region of the processing volume 106 further away from the bypass space 144.

[0052]

[0061] When a pressure difference between the first foreline space 140a and the second foreline space 140b can be created by increasing the pressure within the first foreline space 140a, the third gas 154 can be flowed into the processing space 106 through the multiple apertures 112 of the pumping liner 110 and distributed within the processing space 106 at a higher concentration. However, the distribution of the third gas 154 within the processing space 106 may not be uniform. For example, the concentration of the third gas 154 in a region of the processing space 106 near the baffle of the pumping liner 110 may be lower than other regions of the processing space 106. Thus, the various chamber parts defining the processing space 106 may not be uniformly cleaned by the ex-situ cleaning gas 154 and may require a very long cleaning time to reliably remove all materials deposited on the various chamber parts, which may reduce manufacturing throughput.

[0053]

[0062] FIG. 6A shows a schematic left perspective view of the flow space of the processing chamber 100 incorporating a flow control mechanism that can increase the third gas flow 154 into the processing space 106. FIG. 6B shows a partial plan view of the flow space of the processing chamber 100 incorporating a flow control mechanism. As shown, the flow control mechanism can include a pair of choke plates 170a, 170b, or a first choke plate 170a and a second choke plate 170b. Each of the choke plates 170a, 170b can be disposed in the center of one of the toroidal shaped space portions 118a, 118b of the inner space 114 of the pumping liner 110. Thus, the inner space 114 can be divided into two smaller spaces or two sub-spaces, for example, a first substrate space 115a and a second sub-space 115b. The first subspace 115a may include the first transversely extending space portion 116 and a portion, e.g., half, of each of the first and second toroidal shaped space portions 118a, 118b. The second subspace 115b may include the second transversely extending space portion 116b and a remaining portion, e.g., half, of each of the first and second toroidal shaped space portions 118a, 118b. The choke plates 170a, 170b may be oriented perpendicular to the baffles of the pumping liner 110. In particular, the baffles may extend in a circumferential direction, as shown by the extension of the flow gaps 117a, 177b created by the baffles in Figures 6A and 6B, whereas the choke plates 170a, 170b may extend in a radial direction and thus be perpendicular to the baffles.

[0054]

[0063] The choke plates 170a, 170b may directly block or prevent fluid flow from the first subvolume 115a to the second subvolume 115b or vice versa. Fluid access from the first subvolume 115a to the second subvolume 115b or vice versa may be established via the apertures 112 in the pumping liner 110 and the processing space 106. In particular, half of the apertures 112 may provide fluid access between the first subvolume 115a and the processing space 106, and the other half of the apertures 112 may provide fluid access between the second subvolume 115b and the processing space 106. By preventing direct fluid flow from the first subvolume 115a to the second subvolume 115b or vice versa, the ex-situ cleaning gas 154 can be forced into the processing volume 106 after entering the first subvolume 115a, and then forced from the processing volume 106 into the second subvolume 115b, as shown in FIG. 6B.

[0055]

[0064] Thus, when the various steps of the method 400, i.e., flowing the first gas flow 150, the second gas flow 152, and the third gas flow 154, and closing the valve 160, can be performed, the third gas 154 can enter the first laterally extending space portion 116a and the half of the toroidal space portion 118a, 118b to clean half of the pumping liner 110, and then enter the processing space 106 through the half of the aperture 112 to clean the chamber parts, such as the gas distribution member 102 and the substrate support 104, which define the processing space 106. The third gas flow 154 can then enter the other half of the toroidal space portion 118a, 118b and the second laterally extending space portion 116b to clean the other half of the pumping liner 110.

[0056]

[0065] As shown in Figures 6A and 6B, the choke plates 170a, 170b may be placed in the center of the toroidal shaped space portions 118a, 118b, so as to divide the apertures 112 of the pumping liner 110 into an equal number of apertures 112 for establishing fluid access between the first subvolume 115a and the processing space 106 and for establishing fluid access between the second subvolume 115b and the processing space 106. Thus, the apertures 112 may be symmetrically distributed on either side of each of the choke plates 170a, 170b to facilitate equal flow distribution. The choke plates 170a, 170b may also bisect each of the toroidal shaped space portions 118a, 118b. Such an equal division may facilitate creating and / or maintaining a uniform flow profile inside the processing space 106 during deposition and / or cleaning processes. By placing the choke plates 170a, 170b in the center of the toroidal shaped space portions 118a, 118b, the third gas flow 154 can be forced to flow through all of the apertures 112 establishing fluid access between the first subvolume 115a and the processing space 106, and through all of the apertures 112 establishing fluid access between the processing space 106 and the second subvolume 115b, and the third gas 154 can be distributed throughout the processing space 106.

[0057]

[0066] Furthermore, the concentration of the third gas 154 within the processing space 106 may be significantly higher by incorporating the choke plates 170a, 170b within the pumping liner 110, and the concentration of the third gas 154 may be substantially uniform throughout the processing space 106, as compared to the concentration of the third gas flow 154 within the processing space 106 when the choke plates 170a, 170b are not utilized. In some embodiments, the concentration of the third gas 154 within the pumping liner 110 and / or processing space 106 may be about 104 ppm or more, about 105 ppm or more, about 106 ppm or more, or more. Thus, effective cleaning of the pumping liner 110 and various chamber components defining the processing space 106 may be efficiently achieved.

[0058]

[0067] Due to the presence of the choke plates 170a, 170b, in some embodiments, there may be no first gas flow 150 or no second gas flow 152 in the first sub-volume 115a of the pumping liner 110 when the first gas 150 may be flowed. Thus, the mass fraction of the third gas 154 in the first sub-volume 115a of the pumping liner 110 may be at least about 90%, at least about 95%, or up to 100% when the various steps of the method 400 may be performed. The mass fraction of the third gas 154 in the second sub-volume 115b may be at least about 60%, at least about 65%, at least about 70%, at least about 75%, at least about 80%, at least about 85%, at least about 90%, at least about 95%, or higher. Although the mass fraction of the third gas 154 in the second sub-volume 115b may be lower than the mass fraction of the third gas 154 in the first sub-volume 115a due to the presence of the first gas flow 150 and / or the second gas flow 152 in the second sub-volume 115b, the concentration of the third gas 154 in the second sub-volume 115b of the pumping liner 110 may nevertheless be very high, and may be about 104 ppm or more, about 105 ppm or more, about 106 ppm or more, or more, to be effectively cleaned. Thus, by incorporating the choke plates 170a, 170b in the pumping liner 110, effective and efficient cleaning of various chamber components defining the process space 106 and other downstream chamber components, such as, for example, the pumping liner 110, the ducts defining the foreline spaces 140a, 140b, the exhaust space 142, etc., may be achieved.

[0059]

[0068] In some implementations, the choke plates 170a, 170b can be separate components that can be placed in the interior space 114 of the pumping liner 110. In some implementations, the pumping liner 110 can be made by assembling an upper portion having a downward opening and a lower portion having an upward opening that matches the downward opening of the upper portion. The choke plates 170a, 170b can be placed inside or incorporated into one of the upper or lower portions prior to assembly. In some implementations, the pumping liner 110 can be made by assembling together a left portion or half and a right portion or half. The left portion can define a first laterally extending space portion 116a and a respective half of the toroidal shaped space portions 118a, 118b, and the right portion can define a second laterally extending space portion 116b and a respective half of the toroidal shaped space portions 118a, 118b. At least one of the left or right sections may include a closed end that defines one half of the toroidal shaped volume 118a, 118b. Thus, when the left and right sections may be assembled, the toroidal shaped volume 118a, 118b may be divided by a closed end that may effectively function as the choke plates 170a, 170b described above. Various other ways of incorporating the choke plates 170a, 170b into the pumping liner 110 may be implemented.

[0060]

[0069] The choke plates 170a, 170b may have a thickness ranging between about 0.2 mm and about 4 mm, between about 0.5 mm and about 3.5 mm, between about 1 mm and about 3 mm, between about 1.5 mm and about 2.5 mm. The thickness of each of the choke plates 170a, 170b may be about 0.5 mm, about 1 mm, about 1.5 mm, about 2 mm, about 2.5 mm, about 3 mm, about 3.5 mm, or about 4 mm. The choke plates 170a, 170b may be made of the same material as the pumping liner 110, which may include aluminum, alumina, and any other suitable chamber component material, depending on the particular application. Although two choke plates 170a, 170b are described as examples, more than two choke plates 170 may be utilized based on various other considerations. Furthermore, depending on the application and various other considerations, two or more choke plates may be placed in any other location in addition to or instead of the center of the toroidal shaped space portions 118a, 118b to regulate gas flow.

[0061]

[0070] The first gas 150, or in-situ cleaning gas, may be a single gas or a mixture of gases and / or may include plasma effluents having radicals of the in-situ cleaning gas. In some embodiments, the plasma may be generated in a remote plasma source or unit coupled to the processing chamber 100 and then flowed into the processing space 106 of the processing chamber 100. In some embodiments, the plasma effluents may be generated locally in the processing chamber 100, such as a capacitively coupled plasma generated within the processing space 106. As discussed above, in some embodiments, the processing space 106 may be cleaned by the third gas 154, or an ex-situ cleaning gas, so the first gas 150 may not be a cleaning gas that may actively react with materials deposited on the chamber components. The first gas 150 may include one or more inert gases, such as nitrogen or a noble gas, to prevent the ex-situ cleaning gas 154 from flowing back into upstream components of the processing chamber 100.

[0062]

[0071] The second gas 152 may include a single gas or a mixture of gases that may be inert and non-reactive with respect to the material deposited on the chamber parts or other gases delivered into the process chamber 100. The second gas 152 may be or include nitrogen, one or more noble gases, such as helium, neon, argon, krypton, xenon, and radon. The third gas 154, or ex-situ cleaning gas, may be a single gas or a mixture of gases and / or may include plasma effluents having radicals of the ex-situ cleaning gas. The plasma may be generated in a remote plasma source or unit and then flowed into the process chamber 100 through the bypass space 144. In some implementations, the third gas 154 may include oxygen or oxygen radicals, although any other suitable cleaning gas may be utilized depending on the material deposition to be removed from the various chamber parts.

[0063]

[0072] During various processes described herein, including deposition, in situ cleaning, and / or ex situ cleaning, the operating pressure of the processing chamber 100 may be maintained between about 1 torr and about 10 torr, or at about 2 torr, about 4 torr, about 6 torr, about 8 torr, or about 10 torr. In some embodiments, the operating pressure may be maintained at generally the same or similar levels during different processes. In some embodiments, the operating pressure may vary from process to process.

[0064]

[0073] Depending on the process, the flow rates of the various gas flows, e.g., first gas flow 150, second gas flow 152, and / or third gas flow 154, may vary from process to process. During ex-situ cleaning, second gas flow 152 may be maintained at a higher level than first gas flow 150, and third gas flow 154 may be maintained at a higher level than second gas flow 152.

[0065]

[0074] In some embodiments, during ex situ cleaning, the first gas flow 150 can be maintained at a level of about 200 sccm or more, about 300 sccm or more, about 400 sccm or more, about 500 sccm or more, about 600 sccm or more, about 700 sccm or more, about 800 sccm or more, about 900 sccm or more, about 1000 sccm or more, about 1100 sccm or more, about 1200 sccm or more, about 1300 sccm or more, about 1400 sccm or more, about 1500 sccm or more, or higher.

[0066]

[0075] In some embodiments, during ex situ cleaning, the second gas flow 152 can be maintained at a level of about 1500 sccm or more, about 2000 sccm or more, about 2500 sccm or more, about 3000 sccm or more, about 3500 sccm or more, about 4000 sccm or more, or higher. The third gas flow 154 can be maintained at a level of about 4000 sccm or more, about 4500 sccm or more, about 5000 sccm or more, about 5500 sccm or more, about 6000 sccm or more, about 6500 sccm or more, about 7000 sccm or more, about 7500 sccm or more, about 8000 sccm or more, or higher.

[0067]

[0076] In some embodiments, during ex-situ cleaning, the ratio of the flow rate of the first gas 150 to the flow rate of the third gas 154 can range between 1:5 and 1:15, or can be about 1:5, about 1:6, about 1:7, about 1:8, about 1:9, about 1:10, about 1:11, about 1:12, about 1:13, about 1:14, about 1:15, or less. The ratio of the flow rate of the second gas 152 to the flow rate of the third gas 154 can range between 1:2 and 1:5, or can be about 1:2, about 1:3, about 1:4, about 1:5, or less.

[0068]

[0077] During deposition, the flow of the third gas 154 may be continuously maintained to prevent deposition gas from flowing into the bypass space 144 and other chamber spaces upstream of the bypass space 144. The valve 160 may be opened during deposition so that substantially all of the third gas flow 154 may flow from the bypass space 144 through a small area of ​​the first laterally extending space portion 116a of the interior space 114 of the pumping liner 110 and then into the first foreline space 140a. Substantially zero or a very limited amount of the third gas flow 154 may flow over the baffle or into the space of the pumping liner 110 behind the baffle or into the processing space 106. However, the third gas flow 154 may be maintained at a relatively low level compared to during ex-situ cleaning to limit any amount of the third gas 154 that may be present in the processing space 106 and to limit any effect it may have on the pressure and flow profile of the deposition gas in the processing space 106.

[0069]

[0078] In some embodiments, during deposition, the third gas flow 154 may be about 600 sccm or less, about 500 sccm or less, about 400 sccm or less, about 300 sccm or less, about 200 sccm or less, about 100 sccm or less, about 75 sccm or less, about 50 sccm or less, or less, while effectively limiting or preventing deposition gas from entering the bypass space 144 and other chamber spaces upstream of the bypass space 144. The ratio of the flow rate of the third gas 154 to the flow rate of the first gas 150 may range between 1:5 and 1:100, or may be about 1:5, about 1:8, about 1:10, about 1:20, about 1:30, about 1:40, about 1:50, about 1:60, about 1:80, about 1:100, or less. The ratio of the flow rate of the third gas 154 to the flow rate of the second gas 152 can range between 1:2 and 1:50, or can be about 1:2, about 1:4, about 1:8, about 1:10, about 1:15, about 1:20, about 1:30, about 1:40, about 1:50, or less. By maintaining the third gas flow 154 at a relatively low level, the concentration of the third gas 154 in the process space 106, if any, can be less than 4 ppm, less than 3 ppm, less than 2 ppm, less than 1 ppm, less than 0.5 ppm, less than 0.1 ppm, or less.

[0070]

[0079] In some embodiments, depending on the flow rates of the first gas 150, the second gas 152, and / or the third gas 154, small or minimal pressure skew may be observed within the processing space 106 along a direction perpendicular to the orientation of the choke plates 170a, 170b. In other words, the pressure profile may not be perfectly concentric or axisymmetric within the processing space 106 around the central axis of the processing space 106.

[0071]

[0080] 7 shows schematic pressure profiles within the process space 106 for different flow rates of the third gas 154. For example, when the third gas 154 can be flowed at 500 sccm, a pressure skew or pressure difference of about 0.001 torr or less can be observed at two peripheral locations of the process space 106 along a direction perpendicular to the orientation of the choke plates 170a, 170b. When the third gas 154 can be flowed at 100 sccm, a pressure skew or pressure difference of about 0.0002 torr or less can be observed at the same two peripheral locations along a direction perpendicular to the orientation of the choke plates 170a, 170b. Depending on the particular application, such pressure difference may be negligible.

[0072]

[0081] To eliminate any pressure skew that may be created by the third gas flow 154, two bypass flows may be created as shown in Figure 8. As discussed above, the pumping liner 110 includes a bypass gas inlet or a first bypass gas inlet for providing fluid access from the bypass space 144 or a first bypass space 144a shown in Figure 8 into the first laterally extending space portion 116a of the pumping liner 110. In the embodiment shown in Figure 8, the pumping liner 110 may further include a second bypass gas inlet for providing fluid access from the second bypass space 144b into the second laterally extending space portion 116b. The third gas 154 may be simultaneously flowed through the first bypass space 144a into the first laterally extending space portion 116a and through the second bypass space 144b into the second laterally extending space portion 116b at a common flow rate, such as any of the ranges or levels of flow rates for the third gas flow 154 discussed above. The parallel flows 154a, 154b of the third gas 154 may facilitate creating and / or maintaining a concentric or axially symmetric pressure profile in the processing space 106 during deposition.

[0073]

[0082] FIG. 9 illustrates exemplary steps of a method 900 utilizing ex-situ cleaning to clean a process space 100. FIGs. 10A and 10B illustrate the method 900 in a schematic manner. In particular, FIGs. 10A and 10B illustrate a flow space defined by various chamber components. FIG. 10A illustrates a right perspective view of the flow space during which one or more steps of the method 900 may be performed. FIG. 10B illustrates the same perspective view of FIG. 10B during which one or more other steps of the method 900 may be performed. The various steps of the method 900 may be performed in any order, removed, or modified.

[0074]

[0083] The method 900 may begin by flowing a first or in-situ cleaning gas through the gas distribution member 102 into the processing space 106 in step 905, flowing a second gas 152 through the gap 122 surrounding the substrate support 104 in an upward direction toward the processing space 106 in step 910, and flowing a third or ex-situ cleaning gas from the first and second bypass spaces 144a, 144b into the interior space 114 of the pumping liner 110 through the first and second bypass inlets, respectively, in step 915. The first, second, and third gas flows in the method 900 may be the same as the first, second, and third gases 150, 152, and 154, respectively, flowed during the method 400 described above. The flow rates of the first gas 150, the second gas 152, and the third gas 154 may be maintained at any of the flow rates discussed above. Furthermore, the operating pressure of the processing chamber 100 may be maintained at any pressure level or range discussed above.

[0075]

[0084] In step 920, a valve 160b disposed along the foreline defining the second foreline space 140b may be closed to prevent flow through the second foreline space 140b. The valve 160b may be equivalent, the same, or similar to the valve 160a disposed along the foreline defining the first foreline space 140a. For purposes of explanation, the valves 160a and 160b may be referred to as the first foreline valve 160a and the second foreline valve 160b, respectively.

[0076]

[0085] In step 925, the flow of the third gas or ex-situ cleaning gas from the first bypass space 144a into the interior space 114, more specifically the first subspace 115a, through the first bypass gas inlet of the pumping liner 110 may be stopped, for example, by closing a valve located upstream of the first bypass gas inlet and which may be configured to control the flow of ex-situ cleaning gas into the first bypass space 144a. In step 925, the flow of ex-situ cleaning gas from the second bypass space 144b into the second subspace 115b through the second bypass gas inlet of the pumping liner 110 may be maintained.

[0077]

[0086] Upon completion of step 925, the gas or fluid flow as shown in FIG. 10A may be achieved. Specifically, ex-situ cleaning gas may flow from the second bypass volume 144b into the second sub-volume 115b. With the valve 160b closed and the choke plates 170a, 170b present, the ex-situ cleaning gas may then enter the process volume 106 through half of the apertures 112 of the pumping liner 110 and then into the first sub-volume 115a through the other half of the apertures 112 of the pumping liner 110. The ex-situ cleaning gas may then flow to the exhaust through the first foreline volume 140a and the exhaust volume 142. The flow of ex-situ cleaning gas through the various flow spaces as shown in Figure 10A can clean the pumping liner 110, the chamber parts defining the processing space 106, such as the gas distribution member 102 and the substrate support 104, and various other downstream ducts and chamber parts exposed to the ex-situ cleaning gas flow. The flow of ex-situ cleaning gas as shown in Figure 10A can be maintained until the various chamber parts can be sufficiently cleaned.

[0078]

[0087] In step 930, the flow of ex-situ cleaning gas may be resumed from the first bypass space 144a through the first bypass gas inlet of the pumping liner 110 into the interior space 114, or more specifically into the first subspace 115a. In step 935, the second foreline valve 160b may be opened, and in step 940, the first foreline valve 160a may be closed to prevent fluid flow through the first foreline space 140a.

[0079]

[0088] In step 945, the flow of ex-situ cleaning gas from the second bypass space 144b into the interior space 114, more specifically the second sub-space 115b, through the second bypass gas inlet of the pumping liner 110 may be stopped, for example, by closing a valve located upstream of the second bypass gas inlet and which may be configured to control the flow of ex-situ cleaning gas into the second bypass space 144b. In step 945, the flow of ex-situ cleaning gas from the first bypass space 144a into the first sub-space 115a through the first bypass gas inlet of the pumping liner 110 may be maintained.

[0080]

[0089] Upon completion of step 945, the gas or fluid flow as shown in FIG. 10B may be achieved. Specifically, ex-situ cleaning gas may flow from the first bypass volume 144a into the first sub-volume 115a. With the valve 160a closed and the choke plates 170a, 170b present, the ex-situ cleaning gas may then enter the process volume 106 through half of the apertures 112 of the pumping liner 110 and then into the second sub-volume 115b through the other half of the apertures 112 of the pumping liner 110. The ex-situ cleaning gas may then flow to the exhaust through the second foreline volume 140b and the exhaust volume 142. The flow of ex-situ cleaning gas through the various flow spaces as shown in Figure 10B can further clean the pumping liner 110, the chamber parts defining the processing space 106, such as the gas distribution member 102 and the substrate support 104, and various other downstream ducts and chamber parts exposed to the ex-situ cleaning gas flow. The flow of ex-situ cleaning gas as shown in Figure 10B can be maintained until the various chamber parts can be sufficiently cleaned.

[0081]

[0090] Once the processing chamber 100 has been cleaned by performing some or all of steps 905 through 945, the flow of ex-situ cleaning gas may be resumed in step 950 from the first bypass space 144b through the second bypass gas inlet of the pumping liner 110 into the interior space 114, or more specifically into the first subspace 115a. In step 955, the first foreline valve 160a may be opened. The flow rates of the ex-situ cleaning gas and the first and second gases may be adjusted to appropriate levels as discussed above for performing a deposition process, or other appropriate levels for various other processes.

[0082]

[0091] By performing one or more steps of the method 900, chamber parts downstream of the processing space 106 and chamber parts defining the processing space 106, such as the gas distribution member 102 and the substrate support 104, can be cleaned using ex-situ cleaning gas delivered through a bypass inlet of the pumping liner 110. The ex-situ cleaning can be delivered simultaneously with the in-situ cleaning. Thus, the chamber parts defining the processing space 106, the chamber parts upstream of the processing space 106, and the chamber parts downstream of the processing space 106 can be cleaned simultaneously. The entire processing chamber 100 can be cleaned more efficiently compared to utilizing in-situ cleaning alone, thereby improving manufacturing throughput.

[0083]

[0092] In the above description, for purposes of explanation, numerous details are presented in order to facilitate an understanding of various embodiments of the present technology. However, it will be apparent to one of ordinary skill in the art that certain embodiments may be practiced without some of these details or with additional details.

[0084]

[0093] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the present technology. Thus, the above description should not be considered as limiting the scope of the present technology. Additionally, while a method or process may be described sequentially or in steps, it should be understood that the operations may be performed simultaneously or in a different order than described.

[0085]

[0094] Where a range of values ​​is provided, it is to be understood that each intervening value between the upper and lower limits of that range is specifically disclosed to the smallest unit of the lower limit, unless the context clearly indicates otherwise. Any narrower ranges between any stated or unstated intervening value in a stated range, as well as any other stated or intervening value in that stated range, are also encompassed. The upper and lower limits of these smaller ranges may be individually included or excluded from the range, and each range in which either, neither or both limits are included in the smaller ranges is also encompassed within the scope of the technology, subject to any specifically excluded limits in the stated range. Where one or both limits are included in a stated range, ranges excluding either or both of those inclusive limits are also included.

[0086]

[0095] As used in the specification and claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a precursor" includes a plurality of such precursors, reference to "the layer" includes a reference to one or more layers and equivalents known to those skilled in the art, and so forth.

[0087]

[0096] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. A processing chamber comprising: A gas distribution member; a substrate support positioned below the gas distribution member, the gas distribution member and the substrate support at least partially defining a processing space, the gas distribution member providing fluid access into the processing space; a pumping liner disposed radially outward from the substrate support, the pumping liner defining a first laterally extending liner portion, a second laterally extending liner portion, a first toroidal shaped liner portion, and a second toroidal shaped liner portion; the pumping liner defines a plurality of apertures circumferentially disposed about the processing space and an interior space fluidly connected with the processing space via the plurality of apertures; the pumping liner interior volume includes a first laterally extending volume portion, a second laterally extending volume portion, a first toroidal shaped volume portion, and a second toroidal shaped volume portion; the first transversely extending spatial portion and the second transversely extending spatial portion are in fluid communication with the first toroidal shaped spatial portion and the second toroidal shaped spatial portion, respectively, within the pumping liner; the pumping liner further defines a gas inlet disposed radially outward from the plurality of apertures; the gas inlet providing fluid access into the interior space of the pumping liner; A pumping liner; a flow control mechanism operable during fluid distribution from the gas distribution member into the processing volume to direct fluid flow through the gas inlet into the interior volume and thereafter through a subset of the plurality of apertures in the pumping liner into the processing volume; a processing chamber comprising:

2. 2. The processing chamber of claim 1, wherein the flow control mechanism comprises a first choke plate and a second choke plate disposed within the pumping liner, the first choke plate and the second choke plate dividing the interior space of the pumping liner into a first space and a second space, the first space being fluidly connected to the processing space through half of the plurality of apertures, and the second space being fluidly connected to the processing chamber through the other half of the plurality of apertures, and the flow control mechanism is operable to direct a fluid flow from the first space through the processing space and into the second space.

3. 2. The processing chamber of claim 1, wherein the flow control mechanism includes a valve disposed downstream of a gas outlet and upstream of an exhaust, the valve operable to close to prevent fluid flow from the processing chamber or the interior space of the pumping liner through the gas outlet to the exhaust.

4. 4. The processing chamber of claim 3, wherein the gas outlet is a first gas outlet, the valve is a first valve, the flow control mechanism further comprises a second gas outlet and a second valve disposed downstream of the second gas outlet and upstream of the exhaust, the gas inlet is a first gas inlet, the pumping liner further defines a second gas inlet, and the second valve is operable to close during fluid distribution from the gas distribution member to the processing space to direct fluid flow through the second gas inlet into the interior space and thereafter through another subset of the plurality of apertures into the processing space.

5. 2. The processing chamber of claim 1, wherein the pumping liner includes a first internal baffle and a second internal baffle diametrically opposed to one another, the first internal baffle being disposed between the gas inlet and the plurality of apertures.

6. The pumping liner comprises: a first laterally extending liner portion defining the first laterally extending space portion of the interior volume of the pumping liner, the gas inlet being disposed on an upper surface of the first laterally extending liner portion; a second transversely extending liner portion defining a second transversely extending spatial portion of the interior volume of the pumping liner, the first transversely extending spatial portion and the second transversely extending spatial portion being diametrically opposed to one another; a first toroidal shaped liner portion defining the first toroidal shaped volume of the pumping liner interior volume, the first toroidal shaped volume being disposed between the first transversely extending volume portion and the second transversely extending volume portion; a second toroidal shaped liner portion defining the second toroidal shaped volume of the interior volume of the pumping liner, the first toroidal shaped volume portion and the second toroidal shaped volume portion being diametrically opposed to one another; The processing chamber of claim 1 , comprising:

7. 7. The processing chamber of claim 6, wherein the gas inlet is a first gas inlet, the pumping liner further defines a second gas inlet disposed on an upper surface of the second laterally extending liner portion, and the flow control mechanism is further operable during fluid distribution from the gas distribution member into the processing space to direct fluid flow through the second gas inlet into the interior space of the pumping liner and thereafter into the processing space through another subset of the plurality of apertures in the pumping liner.

8. 10. The processing chamber of claim 1, further comprising an annular gap around the substrate support providing fluid access from a lower portion of the processing chamber to the processing space and the interior space of the pumping liner.

9. 1. A method for cleaning a processing chamber, comprising: flowing a first gas through a gas distribution member of a processing chamber into a processing space of the processing chamber defined at least in part by the gas distribution member and a substrate support; flowing a second gas through a gas inlet of a pumping liner of the processing chamber into an interior volume of the pumping liner, the pumping liner being disposed radially outward from the substrate support, the interior volume being fluidly connected to the processing volume through a plurality of apertures in the pumping liner disposed circumferentially around the processing volume; flowing a portion of the second gas from the interior volume of the pumping liner through a first subset of apertures of the plurality of apertures into the processing volume while maintaining the flow of the first gas within the processing volume; flowing the portion of the second gas from the process volume through a second subset of the plurality of apertures into the interior volume of the pumping liner; A method comprising:

10. the internal space of the pumping liner includes a first space and a second space separated by a pair of choke plates; flowing the second gas through the gas inlet of the pumping liner and into the interior volume of the pumping liner includes flowing the second gas through the gas inlet of the pumping liner and into the first volume; flowing the portion of the second gas from the interior volume of the pumping liner into the processing volume includes flowing the portion of the second gas from the first volume into the processing volume, wherein the portion of the second gas is distributed throughout the processing volume; flowing the portion of the second gas from the processing volume into the interior volume of the pumping liner comprises flowing the portion of the second gas from the processing volume into the second volume.

10. The method of claim 9.

11. 10. The method of claim 9, wherein the first gas is distributed throughout the processing space with a uniform concentration, the first gas being flowed at a first flow rate and the second gas being flowed at a second flow rate that is greater than the first flow rate.

12. the gas inlet is a first gas inlet; ceasing flow of the second gas into the interior volume of the pumping liner through the first gas inlet of the pumping liner; flowing a third gas into the interior volume of the pumping liner through a second gas inlet of the pumping liner; flowing a portion of the third gas from the interior volume of the pumping liner through the second subset of apertures of the plurality of apertures into the process volume; flowing the portion of the third gas from the process volume through the first subset of the plurality of apertures into the interior volume of the pumping liner; The method of claim 9 further comprising:

13. 10. The method of claim 9, further comprising flowing a third gas in an upward direction through an annular gap surrounding the substrate support toward the processing space.

14. 1. A deposition method comprising the steps of: flowing a first gas through a gas distribution member of a processing chamber into a processing space defined at least in part by a substrate support of the processing chamber supporting a semiconductor substrate thereon and the gas distribution member; flowing a second gas through a gas inlet of a pumping liner of the processing chamber into an interior volume of the pumping liner, the pumping liner being disposed radially outward from the substrate support, the interior volume of the pumping liner being fluidly connected to the processing volume through a plurality of apertures disposed circumferentially around the processing volume, the first gas being flowed at a first flow rate and the second gas being flowed at a second flow rate less than the first flow rate such that the flow of the second gas into the processing volume is prevented while the first gas is flowed from the processing volume through the plurality of apertures into the interior volume of the pumping liner, a pressure difference between two peripheral locations within the processing volume being less than 0.1 torr. and

15. the gas inlet is a first gas inlet, the deposition method further comprising: flowing a third gas through a second gas inlet of the pumping liner into the interior volume of the pumping liner, the first gas inlet and the second gas inlet being diametrically opposed to one another, the third gas being flowed at a third flow rate less than the first flow rate such that the flow of the third gas into the processing volume is prevented, the flow of the first gas, the flow of the second gas, and the flow of the third gas collectively producing an axially symmetric pressure profile within the processing volume about a central axis of the processing volume; flowing the third gas in an upward direction toward the processing space through an annular gap surrounding the substrate support; 15. The method of claim 14, comprising:

16. A processing chamber comprising: A gas distribution member; a substrate support positioned below the gas distribution member, the gas distribution member and the substrate support at least partially defining a processing space, the gas distribution member providing fluid access into the processing space; a pumping liner disposed radially outward from the substrate support, the pumping liner defines a plurality of apertures circumferentially disposed about the processing space and an interior space fluidly connected with the processing space via the plurality of apertures; the pumping liner further defines a gas inlet disposed radially outward from the plurality of apertures, the gas inlet providing fluid access into the interior space of the pumping liner. A pumping liner; a flow control mechanism operable during fluid distribution from the gas distribution member into the processing volume to direct fluid flow through the gas inlet into the interior volume and thereafter through a subset of the plurality of apertures in the pumping liner into the processing volume; Including, the flow control mechanism includes a valve disposed downstream of the gas outlet and upstream of the exhaust, the valve operable to close to prevent fluid flow from the interior volume of the processing chamber or the pumping liner through the gas outlet to the exhaust; a first valve, the flow control mechanism further comprising a second gas outlet and a second valve disposed downstream of the second gas outlet and upstream of the exhaust, the gas inlet being a first gas inlet, the pumping liner further defining a second gas inlet, the second valve being operable to close to direct fluid flow through the second gas inlet into the interior space and thereafter through another subset of the plurality of apertures into the processing space during fluid distribution from the gas distribution member to the processing space.

17. A processing chamber comprising: A gas distribution member; a substrate support positioned below the gas distribution member, the gas distribution member and the substrate support at least partially defining a processing space, the gas distribution member providing fluid access into the processing space; a pumping liner disposed radially outward from the substrate support, the pumping liner defines a plurality of apertures circumferentially disposed about the processing space and an interior space fluidly connected with the processing space via the plurality of apertures; the pumping liner further defines a gas inlet disposed radially outward from the plurality of apertures, the gas inlet providing fluid access into the interior space of the pumping liner. A pumping liner; a flow control mechanism operable during fluid distribution from the gas distribution member into the processing volume to direct fluid flow through the gas inlet into the interior volume and thereafter through a subset of the plurality of apertures in the pumping liner into the processing volume; Including, A processing chamber, wherein the pumping liner includes a first internal baffle and a second internal baffle diametrically opposed to one another, the first internal baffle being disposed between the gas inlet and the plurality of apertures.

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