SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

The present invention minimizes scratching of a surface of a substrate that is being polished and improves the polishing rate.　This substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, a nozzle 228 for supplying a polishing liquid to the periphery of the pad holder 226, and a pad rotation mechanism for rotating the pad holder 226. The pad holder 226 has a discharge hole 22a-2a formed in a central section of a holding surface 221-2c that holds the polishing pad 222, and a discharge path 221-2b that allows communication from the discharge hole 221-2a to outside of the pad holder 226.

Description

[Technical field]

[0001] The present application relates to a substrate processing apparatus and a substrate processing method. This application claims priority based on Japanese Patent Application No. 2021-2158, filed on January 8, 2021. The entire disclosure of Japanese Patent Application No. 2021-2158, including the specification, claims, drawings and abstract, is incorporated herein by reference in its entirety. [Background technology]

[0002] One type of substrate processing equipment used in semiconductor processing is the CMP (Chemical Mechanical Polishing) equipment. CMP equipment can be broadly categorized into "face-up type" (where the surface of the substrate to be polished faces upward) and "face-down type" (where the surface of the substrate to be polished faces downward) depending on the direction in which the surface of the substrate to be polished faces.

[0003] Patent Document 1 discloses that in a face-up polishing apparatus, a substrate is polished by rotating a polishing pad having a diameter smaller than that of the substrate and bringing it into contact with the substrate. This polishing apparatus is configured such that a circulation path is formed radially from the center of a polishing tool for holding the polishing pad, and a polishing liquid supplied to the center of the polishing tool is supplied to the substrate from the outer periphery of the polishing tool. This polishing apparatus is also configured such that a spiral groove formed in the polishing pad allows the polishing liquid supplied to the substrate from the outer periphery of the polishing tool to be collected in the center of the polishing tool. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 5919592 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the technique described in Patent Document 1 does not take into consideration preventing damage to the polished surface of the substrate and improving the polishing rate.

[0006] That is, because the polishing tool is a rotating part, a rotary joint (or a part having a function equivalent to that of a rotary joint: hereinafter simply referred to as a rotary joint) must be provided in order to supply the polishing liquid through the polishing tool. When the polishing liquid passes through the rotary joint, the abrasive grains contained in the polishing liquid wear down the internal parts of the rotary joint, and the particles resulting from the wear may get mixed in between the polishing pad and the substrate together with the polishing liquid, damaging the polished surface of the substrate.

[0007] On the other hand, when the polishing liquid is not supplied through the polishing tool, it becomes difficult to supply a sufficient amount of polishing liquid between the polishing surface of the polishing pad and the polished surface of the substrate. In this regard, as described in Patent Document 1, the polishing liquid can be circulated by using a polishing pad with a spiral groove and forming a circulation path in the polishing tool. However, in the method disclosed in Patent Document 1, since the polishing liquid is circulated through the polishing tool, fresh polishing liquid cannot necessarily be supplied between the polishing tool and the substrate. Therefore, in the method of Patent Document 1, fresh polishing liquid cannot be sufficiently supplied to the center of the polished surface of the substrate, and the polishing rate may decrease. In addition, when the polishing liquid is circulated, residues generated during polishing of the substrate may damage the polished surface of the substrate.

[0008] Therefore, an object of the present invention is to prevent the polished surface of a substrate from being damaged and to improve the polishing rate. [Means for solving the problem]

[0009] According to one embodiment, a substrate processing apparatus is disclosed that includes a table for supporting a substrate, a pad holder for holding a polishing pad for polishing a substrate supported on the table, a nozzle for supplying a polishing liquid around the pad holder, and a pad rotation mechanism for rotating the pad holder, wherein the pad holder has a discharge hole formed in the center of a holding surface that holds the polishing pad, and a discharge path communicating from the discharge hole to the outside of the pad holder. [Brief description of the drawings]

[0010] [Figure 1] 1 is a perspective view illustrating a schematic overall configuration of a substrate processing apparatus according to an embodiment; [Diagram 2] 1 is a plan view illustrating a schematic overall configuration of a substrate processing apparatus according to an embodiment; [Diagram 3] FIG. 1 is a perspective view showing a schematic diagram of a multi-axis arm according to one embodiment. [Figure 4] FIG. 2 is a perspective view showing a schematic diagram of a pad holder according to one embodiment; [Diagram 5] FIG. 2 is a cross-sectional view illustrating a pad holder according to one embodiment. [Figure 6] FIG. 2 is a plan view that illustrates a schematic view of a second holder body according to one embodiment. [Figure 7] FIG. 2 is a plan view illustrating a polishing pad according to one embodiment. [Figure 8] 1 is a flow chart of a substrate processing method according to an embodiment. [Figure 9] FIG. 2 is a cross-sectional view illustrating a pad holder according to one embodiment. [Figure 10] 10 is a plan view of the pad holder shown in FIG. 9 as viewed from above. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, identical or similar elements are given identical or similar reference symbols, and duplicated descriptions of identical or similar elements may be omitted in the description of each embodiment. Furthermore, features shown in each embodiment can be applied to other embodiments as long as they are not mutually inconsistent.

[0012] Fig. 1 is a perspective view that shows a schematic overall configuration of a substrate processing apparatus according to an embodiment. Fig. 2 is a plan view that shows a schematic overall configuration of a substrate processing apparatus according to an embodiment. The substrate processing apparatus 1000 shown in Figs. 1 and 2 includes a table 100, a multi-axis arm 200, support members 300A and 300B, a dresser 500, and a film thickness measuring device (end point detector) 600. Note that the multi-axis arm 200 is omitted in Fig. 1 for clarity of illustration.

[0013] The table 100 is a member for supporting the substrate WF to be processed so that the surface to be polished of the substrate WF faces upward in the vertical direction. In one embodiment, the table 100 has a support surface 100a for supporting the back surface of the substrate WF opposite the surface to be polished, and is configured to be rotatable by a driving mechanism such as a motor (not shown). A plurality of holes 102 are formed in the support surface 100a, and the table 100 is configured to be able to vacuum-suck the substrate WF through the holes 102. The substrate processing apparatus 1000 of this embodiment is a face-up type substrate processing apparatus that polishes the substrate WF with the surface to be polished of the substrate WF facing upward.

[0014] <Multi-axis arm> Fig. 3 is a perspective view showing a schematic diagram of a multi-axis arm according to an embodiment. As shown in Fig. 2 and Fig. 3, the multi-axis arm 200 is a member that holds a plurality of processing tools for performing various processes on the substrate WF supported by the table 100, and is disposed adjacent to the table 100. The multi-axis arm 200 of this embodiment is configured to hold a large-diameter polishing pad 222 for polishing the substrate WF, a cleaning tool 232 for cleaning the substrate WF, a small-diameter polishing pad 242 for finish-polishing the substrate WF, and an imaging member (camera) 252 for measuring the diameter of the substrate WF.

[0015] The multi-axis arm 200 includes an oscillating shaft 210 extending in a direction (height direction) perpendicular to the substrate WF, a rotational drive mechanism 212 such as a motor that rotates the oscillating shaft 210, and a first arm 220, a second arm 230, a third arm 240, and a fourth arm 250 that are supported by the oscillating shaft 210 and arranged radially around the oscillating shaft 210.

[0016] A rotating shaft 224 extending in the height direction is attached to the first arm 220, and a pad holder 226 is attached to the tip of the rotating shaft 224. A large-diameter polishing pad 222 is held by the pad holder 226. The multi-axis arm 200 includes a lifting mechanism 227 for lifting and lowering the pad holder 226 relative to the substrate WF. The lifting mechanism 227 can be realized by a known mechanism such as an air cylinder. The multi-axis arm 200 also includes a pad rotating mechanism 229 for rotating the pad holder 226. The pad rotating mechanism 229 can be realized by a known mechanism such as a motor, and can rotate the pad holder 226 by rotating the rotating shaft 224.

[0017] The multi-axis arm 200 includes nozzles 228 arranged around the pad holder 226. The nozzles 228 are configured to supply a polishing liquid (slurry) to the substrate WF. The nozzles 228 include a first nozzle 228-1 arranged on the swing path of the pad holder 226, and a second nozzle 228-2 arranged on the swing path of the pad holder 226 on the opposite side of the pad holder 226 to the first nozzle 228-1. The first nozzle 228-1 and the second nozzle 228-2 are each configured to supply a polishing liquid to the polished surface of the substrate WF.

[0018] A rotating shaft 234 extending in the height direction is attached to the second arm 230, and a cleaning tool holder 236 is attached to the tip of the rotating shaft 234. The cleaning tool holder 236 holds a cleaning tool 232. The multi-axis arm 200 includes a lifting mechanism 237 for lifting and lowering the cleaning tool holder 236 relative to the substrate WF. The lifting mechanism 237 can be realized by a known mechanism such as an air cylinder. The multi-axis arm 200 also includes a cleaning tool rotation mechanism 239 for rotating the cleaning tool holder 236. The cleaning tool rotation mechanism 239 can be realized by a known mechanism such as a motor, and can rotate the cleaning tool holder 236 by rotating the rotating shaft 234.

[0019] The multi-axis arm 200 includes atomizers 238 for supplying cleaning liquid to the periphery of the cleaning tool holder 236. The atomizers 238 are provided on both sides of the cleaning tool holder 236 in the swing direction of the cleaning tool holder 236, and are configured to spray the cleaning liquid onto the substrate WF.

[0020] A rotating shaft 244 extending in the height direction is attached to the third arm 240, and a pad holder 246 is attached to the tip of the rotating shaft 244. A small-diameter polishing pad 242 is held by the pad holder 246. The multi-axis arm 200 includes a lifting mechanism 247 for lifting and lowering the pad holder 246 relative to the substrate WF. The lifting mechanism 247 can be realized by a known mechanism such as an air cylinder. The multi-axis arm 200 also includes a pad rotating mechanism 249 for rotating the pad holder 246. The pad rotating mechanism 249 can be realized by a known mechanism such as a motor, and can rotate the pad holder 246 by rotating the rotating shaft 244. An imaging member 252 is held by the fourth arm 250.

[0021] The multi-axis arm 200 includes a nozzle 248 for supplying a polishing liquid around the pad holder 246. The nozzle 248 includes a first nozzle 248-1 disposed on the swing path of the pad holder 246, and a second nozzle 248-2 disposed on the swing path of the pad holder 246 on the opposite side of the pad holder 246 to the first nozzle 248-1. The first nozzle 248-1 and the second nozzle 248-2 are configured to supply a polishing liquid to the polished surface of the substrate WF.

[0022] As shown in FIG. 2, in this embodiment, the first arm 220, the second arm 230, the third arm 240, and the fourth arm 250 extend radially around the oscillating shaft 210, shifted by 90 degrees counterclockwise in a plan view. The rotary drive mechanism 212 can move any one of the large-diameter polishing pad 222, the cleaning tool 232, the small-diameter polishing pad 242, and the imaging member 252 onto the substrate WF by rotating the oscillating shaft 210. In addition, the rotary drive mechanism 212 can move the polishing pad 222 or the polishing pad 242 onto the dresser 500 by rotating the oscillating shaft 210. In addition, the rotary drive mechanism 212 has a function of a swing mechanism that swings the first arm 220, the second arm 230, the third arm 240, and the fourth arm 250 by alternately rotating and driving the oscillating shaft 210 clockwise and counterclockwise. Specifically, the rotary drive mechanism 212 can oscillate the polishing pad 222 (pad holder 226), the cleaning tool 232 (cleaning tool holder 236), or the polishing pad 242 (pad holder 246) relative to the substrate WF by alternately rotating and driving the swing shaft 210 clockwise and counterclockwise while the polishing pad 222, the cleaning tool 232, or the polishing pad 242 is positioned on the substrate WF. In this embodiment, an example is shown in which the polishing pad 222, the cleaning tool 232, or the polishing pad 242 is turned and oscillated in the radial direction of the substrate WF by the rotary drive mechanism 212, that is, reciprocated along an arc, but this is not limiting. For example, the swing mechanism can have a configuration that oscillates the polishing pad 222, the cleaning tool 232, or the polishing pad 242 linearly in the radial direction of the substrate, that is, reciprocated along a straight line.

[0023] The substrate processing apparatus 1000 is configured to polish the substrate WF, for example, when the polishing pad 222 is on the substrate WF, by rotating the table 100 and rotating the polishing pad 222, and by oscillating the polishing pad 222 with the rotary drive mechanism 212 while pressing the polishing pad 222 against the substrate WF with the lifting mechanism 227.

[0024] <Supporting member> As shown in FIG. 1 and FIG. 2, the substrate processing apparatus 1000 includes a first support member 300A disposed on the swing path of the polishing pad 222 on the outer side of the table 100, and a second support member 300B disposed on the swing path of the polishing pad 222 on the opposite side of the table 100 to the first support member 300A. The first support member 300A and the second support member 300B are line-symmetrical with respect to the substrate WF. Therefore, in the following, the first support member 300A and the second support member 300B are collectively referred to as the support member 300 as appropriate. In the following, as an example, the function of the support member 300 when the large-diameter polishing pad 222 is swung relative to the substrate WF is described, but the same applies to the cleaning tool 232 or the small-diameter polishing pad 242.

[0025] The support member 300 is a member for supporting the polishing pad 222 swung outwardly of the table 100 by the rotation of the swing shaft 210. That is, the substrate processing apparatus 1000 is configured to uniformly polish the polished surface of the substrate WF by swung (overhanging) the polishing pad 222 until it protrudes outwardly of the substrate WF when polishing the substrate WF. Here, if the polishing pad 222 is overhanging, the pressure of the polishing pad 222 may be concentrated on the peripheral portion of the substrate WF due to various factors such as the inclination of the pad holder 226, and the polished surface of the substrate WF may not be polished uniformly. Therefore, the substrate processing apparatus 1000 of this embodiment is provided with support members 300 on both sides of the table 100 for supporting the polishing pad 222 overhanging outwardly of the substrate WF.

[0026] The first support member 300A and the second support member 300B each have support surfaces 301a and 301b capable of supporting the entire polishing surface 222c of the polishing pad 222 that contacts the substrate WF. That is, since the support surfaces 301a and 301b each have an area larger than the area of ​​the polishing surface 222c of the polishing pad 222, even if the polishing pad 222 completely overhangs the outside of the substrate WF, the entire polishing surface 222c is supported by the support surfaces 301a and 301b. As a result, in this embodiment, when the polishing pad 222 oscillates above the substrate WF, the entire polishing surface of the polishing pad 222 is supported in contact with the substrate WF, and even when the polishing pad 222 oscillates to the outside of the table 100, the entire polishing surface is supported by the support member 300, so that the polishing pad 222 does not go beyond the area of ​​the polished surface of the substrate WF and the support surfaces 301a and 301b during oscillation.

[0027] <Film thickness measuring instrument> As shown in FIG. 1 and FIG. 2, the substrate processing apparatus 1000 includes a film thickness measuring instrument 600 for measuring a film thickness profile of the polished surface of the substrate WF while polishing the substrate WF. The film thickness measuring instrument 600 can be configured with various sensors such as an eddy current sensor or an optical sensor. As shown in FIG. 1, a rotating shaft 610 extending in the height direction is disposed adjacent to the table 100. The rotating shaft 610 can be rotated around its axis by a rotation drive mechanism such as a motor (not shown). A swing arm 620 is attached to the rotating shaft 610, and the film thickness measuring instrument 600 is attached to the tip of the swing arm 620. The film thickness measuring instrument 600 is configured to swing around the axis of the rotating shaft 610 by the rotation of the rotating shaft 610. Specifically, the film thickness measuring instrument 600 can be swung along the radial direction of the substrate WF by the rotation of the rotating shaft 610 while the substrate WF is being polished. The film thickness measuring instrument 600 is configured to oscillate to a position withdrawn from above the substrate WF when the polishing pad 222 is oscillating above the substrate WF, and to oscillate above the substrate WF when the polishing pad 222 is not oscillating above the substrate WF. That is, the film thickness measuring instrument 600 is configured to oscillate above the substrate WF at a timing that does not interfere with the polishing pad 222 oscillating above the substrate WF, and can measure the film thickness profile of the substrate WF polished by the polishing pad 222 over time. The film thickness measuring instrument 600 can detect the end point of polishing the substrate WF when the measured film thickness profile of the substrate WF becomes the desired film thickness profile.

[0028] <Dresser> As shown in FIG. 1 and FIG. 2, the dresser 500 is disposed in the rotation path of the polishing pads 222, 242 caused by the rotation of the swing shaft 210. The dresser 500 is a member for sharpening (dressing) the polishing pads 222, 242, with diamond particles or the like firmly electrolytically deposited on the surface. The dresser 500 is configured to rotate by a rotation drive mechanism such as a motor (not shown). Pure water can be supplied to the surface of the dresser 500 from a nozzle (not shown). The substrate processing apparatus 1000 rotates the dresser 500 while supplying pure water from the nozzle to the dresser 500, and rotates the polishing pads 222, 242 and swings them relative to the dresser 500 while pressing them against the dresser 500. As a result, the polishing pads 222, 242 are scraped off by the dresser 500, and the polished surfaces of the polishing pads 222, 242 are dressed.

[0029] <Pad holder> Fig. 4 is a perspective view showing a pad holder according to an embodiment. Fig. 5 is a cross-sectional view showing a pad holder according to an embodiment. The configuration of pad holder 226 will be described below, but pad holder 246 has a similar configuration.

[0030] 5, the pad holder 226 includes a plate-shaped first holder body 221-1 attached to the lower end of the rotating shaft 224, and a plate-shaped second holder body 221-2 provided below the first holder body 221-1. The pad holder 226 includes an airbag 223 sandwiched between the first holder body 221-1 and the second holder body 221-2. A flow path 224a communicating with the airbag 223 is formed in the rotating shaft 224 and the first holder body 221-1. The multi-axis arm 200 is capable of adjusting the pressing force of the polishing pad 222 against the substrate WF by supplying gas to the airbag 223 from a fluid source (not shown) through the flow path 224a.

[0031] The pad holder 226 (second holder body 221-2) has a discharge hole 221-2a formed in the center of a holding surface 221-2c that holds the polishing pad 222, and a discharge path 221-2b that communicates from the discharge hole 221-2a to the outside of the pad holder 226. The discharge path 221-2b is formed in the second holder body 221-2 so as to communicate between the discharge hole 221-2a and a side surface of the second holder body 221-2.

[0032] FIG. 6 is a plan view that shows a schematic diagram of the second holder body 221-2 according to an embodiment. As shown in FIG. 6, the discharge paths 221-2b extend radially from the discharge hole 221-2a and open at a plurality of locations (four locations in this embodiment) on the side surface of the second holder body 221-2. Also, as shown in FIG. 6, the discharge hole 221-2a is a round hole, and the discharge paths 221-2b extend from the discharge hole 221-2a in the tangential direction of the discharge hole 221-2a when the second holder body 221-2 is viewed in plan, and open at a plurality of locations on the side surface of the second holder body 221-2. Note that, although an example in which four discharge paths 221-2b are formed has been shown in this embodiment, the number of discharge paths 221-2b is arbitrary.

[0033] FIG. 7 is a plan view showing a polishing pad according to an embodiment. As shown in FIG. 5 and FIG. 7, the polishing pad 222 has a through hole 222b formed in the center of the polishing surface 222c that contacts the substrate WF. The through hole 222b has the same size and shape as the discharge hole 221-2a. The through hole 222b and the discharge hole 221-2a are connected to each other. The polishing surface 222c of the polishing pad 222 has a groove 222a that connects the through hole 222b and the side surface of the polishing pad 222. As shown in FIG. 7, the groove 222a includes a spiral groove that connects the through hole 222b and the side surface of the polishing pad 222.

[0034] The substrate processing apparatus 1000 of this embodiment does not supply the polishing liquid to the substrate WF via the pad holder 226, but supplies the polishing liquid by the nozzles 248 arranged around the pad holder 226. This eliminates the need to provide a rotary joint, and prevents particles resulting from wear of the internal parts of the rotary joint from mixing with the polishing liquid between the polishing pad 222 and the substrate WF and damaging the polished surface of the substrate WF.

[0035] On the other hand, when supplying the polishing liquid to the periphery of the pad holder 226, it is an issue to supply the polishing liquid sufficiently between the polishing surface of the polishing pad 222 and the surface to be polished of the substrate WF. In this regard, the substrate processing apparatus 1000 of this embodiment uses the polishing pad 222 in which the spiral groove 222a is formed, thereby making it easier to transfer the polishing liquid from the outside of the polishing pad 222 to the center. Here, if the polishing pad 222 in which the spiral groove 222a is simply formed is used, air will concentrate at the center of the polishing pad 222, increasing the pressure, and as a result, there is a risk that the transfer of the polishing liquid to the center of the polishing pad 222 will be insufficient.

[0036] In contrast, in this embodiment, a through hole 222b is formed in the center of the polishing pad 222, and a discharge hole 221-2a communicating with the through hole 222b and a discharge path 221-2b communicating between the discharge hole 221-2a and the outside of the pad holder 226 are formed in the second holder body 221-2. This allows air collected in the center of the polishing pad 222 to be discharged to the outside of the pad holder 226 via the through hole 222b, the discharge hole 221-2a, and the discharge path 221-2b. Therefore, it is possible to suppress an increase in pressure in the center of the polishing pad 222, and therefore it is possible to smoothly transport the polishing liquid toward the center of the polishing pad 222.

[0037] In addition, the discharge paths 221-2b extend radially from the discharge hole 221-2a, and centrifugal force acts on the discharge paths 221-2b, so that the polishing liquid transferred to the center of the polishing pad 222 can be discharged to the outside of the pad holder 226 via the through hole 222b, the discharge hole 221-2a, and the discharge paths 221-2b. Here, in this embodiment, the polishing liquid transferred to the center of the polishing pad 222 by the spiral groove 222a rises in a spiral shape through the discharge hole 221-2a. In this regard, as shown in FIG. 6, the discharge paths 221-2b extend radially in the tangential direction of the discharge hole 221-2a, so that the polishing liquid that has risen in a spiral shape through the discharge hole 221-2a can easily flow to the discharge paths 221-2b. As described above, the polishing liquid is discharged to the outside of the pad holder 226 by centrifugal force, so that the polishing liquid supplied to the periphery of the pad holder 226 can be more smoothly transferred to the center of the polishing pad 222. As a result, a sufficient amount of polishing liquid can be supplied between the substrate WF and the polishing pad 222, and the polishing rate of the substrate WF can be improved.

[0038] As described above, the substrate processing apparatus 1000 of this embodiment is configured to polish the substrate WF while swinging the pad holder 226 so that the polishing pad 222 is supported by the support member 300. The multi-axis arm 200 is configured to supply the polishing liquid from the nozzle 228 not only when the polishing pad 222 is in contact with the substrate WF, but also when the polishing pad 222 is in contact with the support member 300. Since the polishing liquid supplied from the nozzle 228 when the polishing pad 222 is in contact with the support member 300 is transferred to the center of the polishing pad 222 as described above, the polishing pad 222 is filled with the polishing liquid that has not been used for polishing the substrate WF. Therefore, as soon as the pad holder 226 is swung to bring the polishing pad 222 into contact with the substrate WF, the polishing process of the substrate WF is performed, so that the surface to be polished of the substrate WF can be polished uniformly and the polishing rate can be improved.

[0039] In this embodiment, the polishing pad 222 having the spiral groove 222a formed therein is attached to the pad holder 226, but the present invention is not limited to this. The polishing pad 222 may be any polishing pad that has a groove formed in the polishing surface 222c that connects the through hole 222b in the center of the polishing surface 222c to the side surface of the polishing pad 222 and is configured to transport the polishing liquid to the center of the polishing pad 222.

[0040] Fig. 9 is a cross-sectional view showing a pad holder according to an embodiment. Fig. 10 is a plan view showing the pad holder shown in Fig. 9 from above. The configuration of pad holder 226 according to an embodiment will be described below with reference to Figs. 9 and 10, but pad holder 246 may have a similar configuration.

[0041] The pad holder 226 shown in FIG. 9 has a structure similar to that of the pad holder 226 shown in FIG. 5. In the embodiment shown in FIG. 9, the substrate processing apparatus 1000 includes a polishing liquid recovery member 270. The polishing liquid recovery member 270 includes an annular portion 272 arranged to surround the second holder body 221-2 of the pad holder 226, and an extension portion 274 extending radially outward from the annular portion 272. The annular portion 272 defines an annular polishing liquid recovery passage 276 for receiving the polishing liquid discharged from the discharge passage 221-2b. The extension portion 274 also defines a polishing liquid recovery passage 278. The polishing liquid recovery passage 276 of the annular portion 272 communicates with the polishing liquid recovery passage 278, and the polishing liquid discharged from the discharge passage 221-2b is recovered through the polishing liquid recovery passage 276 and the polishing liquid recovery passage 278. The recovered polishing liquid is discharged outside the table 100 and discarded together with the polishing liquid that has flowed down from the table 100. The recovered polishing liquid may be reused after being subjected to an appropriate treatment, such as removal of residues.

[0042] The polishing liquid recovery member 270 is fixed to the first arm 220 so as not to come into contact with the pad holder 226. Therefore, the polishing liquid recovery member 270 does not rotate together with the pad holder 226, but oscillates together with the pad holder 226. However, it is preferable that the annular portion 272 of the polishing liquid recovery member 270 is disposed close to the pad holder 226 in order to efficiently recover the polishing liquid. When the polishing liquid recovery member 270 is provided around the pad holder 246, the polishing liquid recovery member 270 is fixed to the third arm 220.

[0043] <Flowchart> Next, the procedure of the substrate processing method according to this embodiment will be described. FIG. 8 is a flow chart of the substrate processing method according to one embodiment. As shown in FIG. 8, in the substrate processing method, first, the polishing pad 222 is attached to the pad holder 226 (attaching step S100). In the substrate processing method of this embodiment, as shown in FIG. 7, a polishing pad 222 is used in which a through hole 222b is formed in the center of the polishing surface 222c, and a spiral groove 222a that connects the through hole 222b and the side surface of the polishing pad 222 is formed in the polishing surface 222c. In addition, in the substrate processing method of this embodiment, as shown in FIG. 5, a pad holder 226 is used in which a discharge hole 221-2a is formed in the center of the holding surface 221-2c, and a discharge path 221-2b that connects the discharge hole 221-2a to the outside of the pad holder 226 is formed.

[0044] Next, in the substrate processing method, the substrate WF is placed on the table 100 (placement step S110). Next, in the substrate processing method, a polishing liquid is supplied from the nozzles 228 arranged around the pad holder 226 toward the surface to be polished of the substrate WF (supply step S120). The supply step S120 continues to supply the polishing liquid from the nozzles 228 while the following polishing process is being performed. Next, in the substrate processing method, the pad holder 226 is rotated using the pad rotation mechanism 229 (rotation step S130). Next, in the substrate processing method, the table 100 is rotated, and the polishing pad 222 is pressed against the substrate WF using the lifting mechanism 227 and the air bag 223 (pressing step S140).

[0045] Next, the substrate processing method includes swinging the pad holder 226 in the radial direction of the substrate using the rotation drive mechanism 212 (swinging step S150). The swinging step S150 swings the pad holder 226 between the substrate WF and the support member 300. Here, the supplying step S120 is configured to supply the polishing liquid to the swinging path of the pad holder 226. The supplying step S120 is configured to supply the polishing liquid to the polished surface of the substrate WF when the polishing pad 222 and the substrate WF are in contact with each other, and to supply the polishing liquid to the support member 300 when the polishing pad 222 swung to the outside of the table 100 by the swinging step S150 is supported by the support member 300. The polishing process of the substrate WF is performed in the above manner.

[0046] Next, the substrate processing method measures a film thickness profile on the polished surface of the substrate WF by the film thickness measuring device 600 while polishing the substrate WF (film thickness measurement step S160). Next, the substrate processing method determines whether the film thickness profile measured in the film thickness measurement step S160 is a desired film thickness profile (determination step S170). If the substrate processing method determines that the desired film thickness profile has not been obtained (determination step S170, No), it returns to the film thickness measurement step S160 and repeats the process. On the other hand, if the substrate processing method determines that the desired film thickness profile has been obtained (determination step S170, Yes), it ends the polishing process.

[0047] According to the substrate processing method of the present embodiment, there is no need to provide a rotary joint, since the polishing liquid is supplied from the nozzles 248 arranged around the pad holder 226. As a result, it is possible to suppress particles resulting from wear of the internal parts of the rotary joint from being mixed in between the polishing pad 222 and the substrate WF together with the polishing liquid, thereby preventing the polished surface of the substrate WF from being damaged.

[0048] Moreover, according to the substrate processing method of the present embodiment, the polishing pad 222 with the spiral groove 222a formed therein and the pad holder 226 with the discharge hole 221-2a and the discharge path 221-2b formed therein are used, so that the gas that gathers at the center of the polishing pad 222 can be discharged to the outside of the pad holder 226. Furthermore, the polishing liquid transferred to the center of the polishing pad 222 by the spiral groove 222a can be discharged from the discharge path 221-2b by the centrifugal force accompanying the rotation of the pad holder 226, so that the polishing liquid can be sequentially transferred to the center of the polishing pad 222. As a result, a sufficient amount of polishing liquid can be supplied between the substrate WF and the polishing pad 222, so that the polishing rate of the substrate WF can be improved. When the substrate processing apparatus 1000 shown in FIGS. 9 and 10 is used, the polishing liquid discharged from the discharge path 221-2b can be collected by the polishing liquid recovery member 270. Therefore, it is possible to prevent the polishing liquid used for polishing from being supplied again between the polishing pad 222 and the substrate WF, and the substrate WF can be polished with fresh polishing liquid.

[0049] Although several embodiments of the present invention have been described above, the above-mentioned embodiments of the present invention are intended to facilitate understanding of the present invention and do not limit the present invention. The present invention may be modified or improved without departing from the spirit thereof, and the present invention naturally includes equivalents thereof. Furthermore, any combination or omission of each component described in the claims and specification is possible within the scope of solving at least a part of the above-mentioned problems or achieving at least a part of the effects.

[0050] As one embodiment, the present application discloses a substrate processing apparatus including a table for supporting a substrate, a pad holder for holding a polishing pad for polishing a substrate supported on the table, a nozzle for supplying a polishing liquid around the pad holder, and a pad rotation mechanism for rotating the pad holder, wherein the pad holder has a discharge hole formed in the center of a holding surface that holds the polishing pad, and a discharge path communicating from the discharge hole to the outside of the pad holder.

[0051] Furthermore, as one embodiment, the present application discloses a substrate processing apparatus, wherein the discharge path is formed in the pad holder so as to communicate between the discharge hole and a side surface of the pad holder.

[0052] Furthermore, as one embodiment, the present application discloses a substrate processing apparatus, wherein the discharge paths are formed in the pad holder so as to extend radially from the discharge hole and open at a plurality of locations on a side surface of the pad holder.

[0053] Furthermore, the present application discloses, as one embodiment, a substrate processing apparatus in which the discharge hole is a circular hole, and the discharge path is formed in the pad holder so as to extend from the discharge hole in a tangential direction to the discharge hole when the pad holder is viewed in a plane, and to open to multiple locations on a side surface of the pad holder.

[0054] Furthermore, the present application discloses, as one embodiment, a substrate processing apparatus in which the pad holder is configured to hold a polishing pad having a through hole formed on the polishing surface that contacts the substrate supported on the table, the through hole communicating with the discharge hole, and a groove connecting the through hole and a side of the polishing pad formed on the polishing surface.

[0055] Furthermore, the present application discloses, as one embodiment, a substrate processing apparatus, in which the groove includes a spiral groove that communicates between the through hole and a side surface of the polishing pad.

[0056] Furthermore, the present application provides, as one embodiment, a method for manufacturing a substrate holding apparatus, comprising: A support member for supporting the polishing pad swung outwardly of the table by the swinging mechanism, and a substrate processing apparatus are also disclosed.

[0057] Furthermore, as one embodiment, the present application discloses a substrate processing apparatus, wherein the nozzle includes a first nozzle arranged in the swing path of the pad holder, and a second nozzle arranged in the swing path of the pad holder on the opposite side of the pad holder from the first nozzle.

[0058] Furthermore, as one embodiment, the present application discloses a substrate processing apparatus, wherein the support member includes a first support member arranged in the swing path of the pad holder outside the table, and a second support member arranged in the swing path of the pad holder on the opposite side of the table to the first support member.

[0059] Furthermore, the present application discloses, as one embodiment, a substrate processing apparatus including a polishing liquid recovery member for recovering the polishing liquid discharged from the discharge path, the polishing liquid recovery member including an annular portion arranged to surround the pad holder.

[0060] Furthermore, as one embodiment, the present application discloses a substrate processing method including an installation step of installing a substrate on a table; a supply step of supplying a polishing liquid to the substrate from nozzles arranged around a pad holder for holding a polishing pad, the pad holder having a drain hole formed in the center of a holding surface for holding the polishing pad and a drain path communicating from the drain hole to the outside of the pad holder; a rotation step of rotating the pad holder; and a pressing step of pressing the polishing pad held by the pad holder against the substrate.

[0061] Furthermore, the present application discloses, as one embodiment, a substrate processing method, which further includes an attachment step of attaching a polishing pad to the pad holder, the polishing pad having a through hole formed on its polishing surface that contacts the substrate placed on the table, the through hole communicating with the discharge hole, and a groove formed on its polishing surface that communicates with the through hole and a side surface of the polishing pad.

[0062] Furthermore, the present application discloses, as one embodiment, a substrate processing method, in which the groove includes a spiral groove that communicates between the through hole and a side surface of the polishing pad.

[0063] Furthermore, as one embodiment, the present application discloses a substrate processing method further including a swinging step of swinging the polishing pad in a radial direction of the substrate, and the supplying step includes a step of supplying a polishing liquid to the swinging path of the pad holder.

[0064] Furthermore, as one embodiment, the present application discloses a substrate processing method, in which the supply step is configured to supply a polishing liquid when the polishing pad oscillated outside the table by the oscillating step is supported by a support member arranged around the table.

[0065] Furthermore, the present application discloses, as one embodiment, a substrate processing method including a recovery step of recovering the polishing liquid discharged from the discharge path by a polishing liquid recovery member, the polishing liquid recovery member including an annular portion arranged to surround the pad holder. [Explanation of symbols]

[0066] 100 Tables 200 Multi-axis arm 221-1 First holder body 221-2 Second holder body 221-2a Drain hole 221-2b Exhaust channel 221-2c Holding surface 222 Polishing pad 222a Spiral groove 222b Through hole 222c polished surface 226 Pad Holder 227 Lifting Mechanism 228 Nozzle 228-1 No. 1 nozzle 228-2 Second Nozzle 229 Pad Rotation Mechanism 270 Polishing fluid recovery member 300 Support member 300A first support member 300B Second support member 301a,301b Support surface 1000 Substrate processing equipment WF board

Claims

1. a table for supporting the substrate; a pad holder for holding a polishing pad for polishing a substrate supported on the table; a nozzle for supplying a polishing liquid to the periphery of the pad holder; a pad rotating mechanism for rotating the pad holder; Including, the pad holder has a discharge hole formed in a central portion of a holding surface that holds the polishing pad, and a discharge path that communicates from the discharge hole to an outside of the pad holder, The discharge passage is formed in the pad holder so as to communicate the discharge hole with a side surface of the pad holder. Substrate processing equipment.

2. The discharge passages are formed in the pad holder so as to extend radially from the discharge hole and open at a plurality of locations on a side surface of the pad holder. The substrate processing apparatus according to claim 1 .

3. The discharge hole is a round hole, the discharge passage is formed in the pad holder so as to extend from the discharge hole in a tangential direction of the discharge hole when the pad holder is viewed in a plan view and to open at a plurality of points on a side surface of the pad holder. The substrate processing apparatus according to claim 1 .

4. the pad holder is configured to hold a polishing pad having a through hole communicating with the discharge hole formed on a polishing surface that contacts the substrate supported on the table, and a groove communicating with the through hole and a side surface of the polishing pad formed on the polishing surface; The substrate processing apparatus according to claim 1 .

5. The groove includes a spiral groove that communicates with the through hole and a side surface of the polishing pad. The substrate processing apparatus according to claim 4 .

6. a swing mechanism for swinging the pad holder in a radial direction of the substrate; a support member for supporting the polishing pad swung to the outside of the table by the swinging mechanism; Further comprising: The substrate processing apparatus according to claim 1 .

7. The nozzles include a first nozzle disposed in a swing path of the pad holder, and a second nozzle disposed in the swing path of the pad holder on a side opposite to the first nozzle across the pad holder. The substrate processing apparatus according to claim 6 .

8. the support member includes a first support member disposed on a swing path of the pad holder on an outer side of the table, and a second support member disposed on a swing path of the pad holder on an opposite side of the table to the first support member, The substrate processing apparatus according to claim 6 or 7.

9. a polishing liquid recovery member for recovering the polishing liquid discharged from the discharge path; the polishing liquid recovery member includes an annular portion disposed so as to surround the pad holder; The substrate processing apparatus according to claim 1 .

10. a table for supporting the substrate; a pad holder for holding a polishing pad for polishing a substrate supported on the table; a nozzle for supplying a polishing liquid to the periphery of the pad holder; a pad rotating mechanism for rotating the pad holder; Including, The pad holder has a discharge hole formed in a center portion of a holding surface that holds the polishing pad, and a discharge path that communicates from the discharge hole to the outside of the pad holder. a swing mechanism for swinging the pad holder in a radial direction of the substrate; a support member for supporting the polishing pad swung to the outside of the table by the swinging mechanism, The nozzles include a first nozzle disposed in a swing path of the pad holder, and a second nozzle disposed in the swing path of the pad holder on a side opposite to the first nozzle across the pad holder. Substrate processing equipment.

11. the pad holder is configured to hold a polishing pad having a through hole communicating with the discharge hole formed on a polishing surface that contacts the substrate supported on the table, and a groove communicating with the through hole and a side surface of the polishing pad formed on the polishing surface; The substrate processing apparatus according to claim 10 .

12. The groove includes a spiral groove that communicates with the through hole and a side surface of the polishing pad. The substrate processing apparatus of claim 11 .

13. The support member is a first support member disposed on the swing path of the pad holder on the outside of the table. and a second support member disposed on a swing path of the pad holder on the opposite side of the table to the first support member. The substrate processing apparatus according to claim 10 .

14. a polishing liquid recovery member for recovering the polishing liquid discharged from the discharge path; the polishing liquid recovery member includes an annular portion disposed so as to surround the pad holder; The substrate processing apparatus according to claim 10 .

15. a table for supporting the substrate; a pad holder for holding a polishing pad for polishing a substrate supported on the table; a nozzle for supplying a polishing liquid to the periphery of the pad holder; a pad rotating mechanism for rotating the pad holder; Including, The pad holder has a discharge hole formed in a center portion of a holding surface that holds the polishing pad, and a discharge path that communicates from the discharge hole to the outside of the pad holder. a swing mechanism for swinging the pad holder in a radial direction of the substrate; a support member for supporting the polishing pad swung to the outside of the table by the swinging mechanism, the support member includes a first support member disposed on a swing path of the pad holder on an outer side of the table, and a second support member disposed on a swing path of the pad holder on an opposite side of the table to the first support member, Substrate processing equipment.

16. the pad holder is configured to hold a polishing pad having a through hole communicating with the discharge hole formed on a polishing surface that contacts the substrate supported on the table, and a groove communicating with the through hole and a side surface of the polishing pad formed on the polishing surface; The substrate processing apparatus of claim 15 .

17. The groove includes a spiral groove that communicates with the through hole and a side surface of the polishing pad. The substrate processing apparatus of claim 16 .

18. a polishing liquid recovery member for recovering the polishing liquid discharged from the discharge path; the polishing liquid recovery member includes an annular portion disposed so as to surround the pad holder; The substrate processing apparatus according to claim 15 .

19. A substrate supporting device comprising: a table for supporting a substrate; a pad holder for holding a polishing pad for polishing a substrate supported on the table; a nozzle for supplying a polishing liquid to the periphery of the pad holder; a pad rotating mechanism for rotating the pad holder; Including, The pad holder has a discharge hole formed in a center portion of a holding surface that holds the polishing pad, and a discharge path that communicates from the discharge hole to the outside of the pad holder. a polishing liquid recovery member for recovering the polishing liquid discharged from the discharge path, the polishing liquid recovery member includes an annular portion disposed so as to surround the pad holder; Substrate processing equipment.

20. The pad holder is a polishing pad having a through hole formed on a polishing surface that contacts a substrate supported on the table, the through hole communicating with the discharge hole, and the through hole and the side surface of the polishing pad are A groove communicating with the polishing surface is configured to hold a polishing pad formed on the polishing surface. The substrate processing apparatus of claim 19 .

21. The groove includes a spiral groove that communicates with the through hole and a side surface of the polishing pad. The substrate processing apparatus of claim 20.

22. a placement step of placing the substrate on a table; a supply step of supplying a polishing liquid from nozzles arranged around a pad holder for holding a polishing pad, the pad holder having a discharge hole formed in a central portion of a holding surface for holding the polishing pad and a discharge path communicating from the discharge hole to an outside of the pad holder; a rotating step of rotating the pad holder; a pressing step of pressing a polishing pad held by the pad holder against the substrate; a collecting step of collecting the polishing liquid discharged from the discharge path by a polishing liquid collecting member, the polishing liquid collecting member including an annular portion arranged so as to surround the pad holder; A method for processing a substrate, comprising:

23. a polishing pad having a through hole communicating with the discharge hole formed on a polishing surface that contacts the substrate placed on the table, the polishing pad having a groove formed on the polishing surface that communicates with the through hole and a side surface of the polishing pad, the polishing pad further including a mounting step of mounting the polishing pad to the pad holder; The method of claim 22.

24. The groove includes a spiral groove that communicates with the through hole and a side surface of the polishing pad. The method of claim 23.

25. The polishing method further includes a step of swinging the polishing pad in a radial direction of the substrate, The supplying step includes a step of supplying a polishing liquid to a swing path of the pad holder. The method of processing a substrate according to any one of claims 22 to 24.

26. the supplying step is configured to supply the polishing liquid when the polishing pad swung to the outside of the table by the swinging step is supported by a support member arranged around the table. The method of claim 25.

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