Wafer chamfering device and wafer chamfering method

Abstract

The invention relates to a wafer chamfering device and a wafer chamfering method. In one aspect, there is provided an apparatus for chamfering a wafer, comprising: a grinding wheel having a grinding portion; the first feeding unit is used for generating first relative motion in the radial direction of the wafer between the grinding wheel and the wafer so as to chamfer at least a first edge of the wafer in a manner of removing a material of the wafer in the radial direction of the wafer through the grinding part; and the second feeding unit is used for generating second relative motion between the grinding wheel and the wafer in the thickness direction of the wafer, so that the second edge of the wafer is chamfered in a manner of removing the material of the wafer in the thickness direction of the wafer through the grinding part. Therefore, different wafer edge chamfer shapes can be obtained through a single grinding wheel.

Description

Technical Field

[0001] The present disclosure relates to the field of grinding technology, and in particular, to a wafer chamfering device and a wafer chamfering method. Background Art

[0002] As an important step in the semiconductor manufacturing process, wafer component edge shaping involves trimming and processing the wafer edge through grinding to obtain chamfers to improve the flatness and edge quality of the wafer, thereby improving the overall yield and product performance.

[0003] In wafer edge shaping, in order to process the wafer edge to a target shape, it is often necessary to customize a grinding wheel corresponding to the target edge shape.

[0004] However, the customization cycle of grinding wheels is long, and in most cases, the first version of customized grinding wheels can only meet the processing requirements of the target edge morphology after adjustment and correction in terms of size and accuracy. The design, manufacturing, adjustment and correction of customized grinding wheels lead to a long production cycle, which reduces the efficiency of wafer grinding.

[0005] In addition, the customized grinding wheel corresponds to a single, specific target edge morphology. Therefore, once the edge morphology requirements change, the grinding wheel needs to be re-customized, which has poor flexibility and high production costs. Summary of the invention

[0006] This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.

[0007] The object of the present disclosure is to provide a wafer chamfering device and a wafer chamfering method which can obtain different wafer edge chamfer morphologies through a single grinding wheel.

[0008] In order to achieve the above object, according to one aspect of the present disclosure, there is provided a device for chamfering a wafer, comprising: A grinding wheel, the grinding wheel having a grinding portion; a first feeding unit, the first feeding unit being used to cause a first relative movement between the grinding wheel and the wafer in a radial direction of the wafer, so as to chamfer at least a first edge of the wafer by removing material of the wafer along the radial direction of the wafer through the grinding part; The second feeding unit is used to generate a second relative movement between the grinding wheel and the wafer in the thickness direction of the wafer, so as to chamfer the second edge of the wafer by removing material of the wafer along the thickness direction of the wafer through the grinding part.

[0009] In some embodiments, the first feeding unit and the second feeding unit may be used to adjust the chamfer morphology of the wafer by controlling the first relative motion and the second relative motion, respectively.

[0010] In some embodiments, the first feeding unit and the second feeding unit may be used to adjust the chamfer angle and the chamfer width of the wafer by controlling the first relative motion and the second relative motion, respectively.

[0011] In some embodiments, the grinding part may be used to sequentially chamfer a first edge and a second edge of the wafer.

[0012] In some embodiments, the grinding portion may include a first grinding surface and a second grinding surface, and the first grinding surface and the second grinding surface are used to chamfer the first edge and the second edge, respectively.

[0013] In some embodiments, the grinding portion may be a U-shaped inner groove of a grinding wheel, and the first grinding surface and the second grinding surface may be respectively located on two sides of a center plane of the U-shaped inner groove.

[0014] In some embodiments, the first grinding surface and the second grinding surface may be straight inclined surfaces or curved surfaces.

[0015] In some embodiments, a driving unit may be further included, and the driving unit may be used to rotate at least one of the grinding wheel and the wafer around its central axis, so that the grinding part chamfers the wafer.

[0016] In some embodiments, the drive unit may be used to rotate the grinding wheel about its central axis.

[0017] According to another aspect of the present disclosure, there is also provided a method for chamfering a wafer, comprising: Produce a first relative movement between the grinding wheel and the wafer in a radial direction of the wafer to chamfer at least a first edge of the wafer by removing material of the wafer along the radial direction of the wafer through the grinding portion of the grinding wheel; and A second relative movement is generated between the grinding wheel and the wafer in the thickness direction of the wafer, so that the second edge of the wafer is chamfered in a manner that the grinding part removes material of the wafer along the thickness direction of the wafer.

[0018] In some embodiments, when the grinding portion of the grinding wheel is a curved surface, the method may further include: Determine the initial radius of curvature of the surface; determining a target radius of curvature of a target chamfer of the wafer; Determining the number of times the grinding portion where the curved surface corresponding to the target curvature radius is located is used according to the change rule of the initial curvature radius and the curvature radius of the curved surface with the number of times of use; and The grinding portion that has been used the above number of times is selected and chamfered.

[0019] In some implementations, when there are multiple wafers, the method may further include: After the first edges of all wafers are chamfered, the second edges of all wafers are chamfered.

[0020] According to the above technical solution, the first relative motion and the second relative motion between the grinding wheel and the wafer are controlled by the first feeding unit and the second feeding unit respectively, and the wafer can be chamfered by removing the material of the wafer along the radial direction and the thickness direction of the wafer by the grinding part. In addition, different first relative motions and second relative motions can be obtained by different configurations of the first feeding unit and the second feeding unit, so as to obtain different first edge and second edge chamfer morphologies of the wafer. Thus, different wafer edge chamfer morphologies can be obtained by a single grinding wheel, which reduces the production cost caused by customizing multiple grinding wheels according to different wafer edge chamfer morphology requirements, and the chamfering of wafer edges with different morphologies can be completed by a single grinding wheel, thereby improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The features and advantages of the embodiments of the present disclosure will become more easily understood through the following description with reference to the accompanying drawings. The drawings are not drawn to scale and some features may be enlarged or reduced to show details of specific parts. In the drawings: Figure 1 It is a schematic structural diagram of a wafer chamfering device according to an embodiment of the present disclosure.

[0022] Figure 2 The figure schematically shows the situation in which the grinding wheel grinds the wafer when the wafer chamfering device is in working state.

[0023] Figure 3 A first relative motion and a second relative motion mode are schematically shown.

[0024] Figure 4 Another first relative movement and a second relative movement pattern are schematically shown.

[0025] Figure 5 The diagram schematically shows the parameters of different wafer chamfer morphologies.

[0026] Figure 6 is a schematic structural diagram of a grinding wheel according to an embodiment of the present disclosure.

[0027] Figure 7 is a schematic structural diagram of a grinding wheel according to another embodiment of the present disclosure.

[0028] Figure 8 is a schematic structural diagram of a grinding wheel according to yet another embodiment of the present disclosure.

[0029] Fig. 9 The present invention is a flowchart of a wafer chamfering method according to an embodiment of the present invention.

[0030] In the drawings, the same or corresponding technical features, parts or components are represented by the same or corresponding reference numerals. DETAILED DESCRIPTION

[0031] The present disclosure is described in detail below with reference to the accompanying drawings by means of exemplary embodiments. It should be noted that the following detailed description of the present disclosure is only for illustrative purposes and is by no means a limitation of the present disclosure.

[0032] It should be noted that, for the sake of clarity, not all features of a specific implementation are described and illustrated in the specification and drawings. Furthermore, in order to avoid unnecessary details that obscure the technical solution focused on by the present disclosure, only the device structures and parts closely related to the technical solution of the present disclosure are described and illustrated in the specification and drawings, while other details that are not closely related to the technical content of the present disclosure and are known to those skilled in the art are omitted.

[0033] In the present disclosure, although the present disclosure has been described with reference to exemplary embodiments, it should be understood that the present disclosure is not limited to the specific embodiments described and shown in detail herein. Those skilled in the art may make various changes to the exemplary embodiments without departing from the scope defined by the claims of the present disclosure.

[0034] Below, refer to Figures 1 to 4 , an apparatus 1 for chamfering a wafer 2 according to an embodiment of the present disclosure is described.

[0035] First, refer to Figure 1 The wafer chamfering device 1 includes a grinding wheel 10 , a first feeding unit 20 and a second feeding unit 30 .

[0036] The grinding wheel 10 has a grinding portion 100, such as Figure 2 As shown, the wafer 2 is chamfered by contacting the grinding unit 100 .

[0037] The first feeding unit 20 is used to generate a first relative movement between the grinding wheel 10 and the wafer 2 in the radial direction of the wafer 2, so as to chamfer at least the first edge 2a of the wafer 2 by removing the material of the wafer 2 along the radial direction of the wafer 2 through the grinding part 100. The radial direction of the wafer 2 refers to any direction extending outward from the geometric center point of the wafer 2 along a straight line passing through the center of the surface of the wafer 2 to the edge of the wafer 2.

[0038] In the first relative movement in the radial direction of the wafer 2 caused by the first feeding unit 20 between the grinding wheel 10 and the wafer 2, the first feeding unit 20 is first responsible for bringing the grinding portion 100 of the grinding wheel 10 close to the predetermined processing position of at least the first edge 2a of the wafer 2, ensuring that the grinding portion 100 and at least the first edge 2a of the wafer 2 maintain an appropriate distance before contact occurs, so as to avoid accidental collision or damage; then, the grinding portion 100 begins to contact at least the first edge 2a of the wafer 2; subsequently, under the first relative movement controlled by the first feeding unit 20, the wafer grinding portion 100 maintains contact with at least the first edge 2a of the wafer 2, and moves relative to the wafer 2 in its radial direction, so as to remove material from at least the first edge 2a of the wafer 2 in the radial direction of the wafer 2, thereby chamfering at least the first edge 2a of the wafer 2.

[0039] The second feeding unit 30 is used to make the grinding wheel 10 and the wafer 2 generate a second relative movement in the thickness direction of the wafer 2, so as to chamfer the second edge 2b of the wafer 2 by removing the material of the wafer 2 along the thickness direction of the wafer 2 through the grinding part 100. The thickness direction of the wafer 2 refers to the direction perpendicular to the surface of the wafer 2, from one surface of the wafer 2 to the other opposite surface. The first edge is the edge area portion close to the end of one surface of the wafer 2, and the second edge is the edge area portion close to the end of the other opposite surface of the wafer 2.

[0040] Similar to the first feeding unit 20, in the second relative movement in the thickness direction of the wafer 2 caused by the second feeding unit 30, the grinding wheel 10 and the wafer 2 are subjected to the second chamfering of the second edge 2a of the wafer 2 by the grinding part 100 approaching, starting to contact and moving along the thickness direction in the contact state relative to the second edge 2b of the wafer 2.

[0041] It should be noted that the first relative movement and the second relative movement are independent of each other, but at the same time, the first relative movement and the second relative movement can also be coordinated with each other to meet the chamfering requirements of the wafer 2 .

[0042] Specifically, during the first relative movement, at least the first edge 2a of the wafer 2 is chamfered by removing the material of the wafer 2 along the radial direction of the wafer 2 by the grinding unit 100, including the following two situations: the first edge 2a is chamfered alone in the above manner during the first relative movement, and the first edge 2a and the second edge 2b are chamfered together in the above manner during the first relative movement. The following describes the chamfering process of the wafer 2 by the wafer chamfering device 1 through two exemplary first relative movement and second relative movement modes in the working state of the wafer chamfering device 1.

[0043] In the case where the first edge 2a is chamfered separately during the first relative movement, as shown in FIG. Figure 3 As shown in (a), (b), and (c) in sequence, under the action of the first feeding unit 20, a first relative movement occurs between the grinding wheel 10 and the wafer 2, and the first edge 2a approaches the grinding part 100 and contacts the grinding part 100, while the second edge 2b does not contact the grinding part 100, so that the first edge 2a can be chamfered by removing the material of the wafer 2 by the grinding part 100. Subsequently, for example, under the action of the second feeding unit 20, a second relative movement occurs between the grinding wheel 10 and the wafer 2, so that the second edge 2b approaches the grinding part 100 and contacts the grinding part 100, so that the second edge 2b can also be chamfered by removing the material of the wafer 2 by the grinding part 100.

[0044] In the case where the first edge 2a and the second edge 2b are chamfered together during the first relative movement, as shown in FIG. Figure 4 As shown in (a), (b), and (c) in sequence, the chamfering method of the first edge 2a is the same as the case where the first edge 2a is chamfered separately during the first relative movement. After the first edge 2a is chamfered, for example, the second edge 2b can be brought close to the grinding part 100 and begin to contact the grinding part 100 by any of the first relative movement and the second relative movement, and then the second edge 2b is chamfered by removing the material of the wafer 2 by the grinding part 100 by means of the first relative movement, or the first relative movement and the second relative movement.

[0045] See also Figures 1 to 4 It is easy to understand that when the second edge 2b of the wafer 2 is chamfered under the action of the second feeding unit 30, the first edge 2a of the wafer 2 will not undergo chamfering. Therefore, based on the specific chamfering morphology of the first edge 2a, the chamfering morphology of the second edge 2b can be changed, or in other words, the chamfering morphology of the second edge 2b and the first edge 2a can be independent of each other or not constrained by a specific corresponding relationship, thereby enabling the overall chamfering morphology of the wafer 2 to be different. Different from this, this cannot be achieved in the existing wafer chamfering device, because when the second edge 2b is chamfered, the first edge 2a must undergo chamfering, that is, the chamfering morphology of the second edge 2b and the first edge 2a will be constrained by a specific corresponding relationship.

[0046] It can be understood that, according to different configurations of the first feeding unit 20 and the second feeding unit 30, when the wafer chamfering device 1 is in a working state, there are different first relative motion and second relative motion modes between the wafer 2 and the grinding part 100, that is, the grinding part 100 has different chamfering modes for the wafer 2.

[0047] In this way, even for a certain structure of the grinding portion 100 of the grinding wheel 10 , a variety of different chamfer morphologies of the wafer 2 can be obtained through different configurations of the first feeding unit 20 and the second feeding unit 30 .

[0048] In some embodiments, the first feeding unit 20 and the second feeding unit 30 are respectively used to adjust the chamfer morphology of the wafer 2 by controlling the first relative motion and the second relative motion.

[0049] It is conceivable that the first feeding unit 20 and the second feeding unit 30 are used to adjust the chamfering angle and the chamfering width of the wafer 2 by controlling the first relative motion and the second relative motion, respectively.

[0050] Reference Figure 5 In (a), when the target chamfer morphology of the wafer 2 is a T-shaped chamfer and the morphology of the grinding part 100 corresponds to the above-mentioned T-shaped target chamfer morphology, the chamfer morphology of the first edge 2a is characterized by the first edge chamfer angle Ang1, the first edge chamfer radial width A1, and the first edge chamfer thickness direction width B1, and the chamfer morphology of the second edge 2b is characterized by the second edge chamfer angle Ang2, the second edge chamfer radial width A2, and the second edge chamfer thickness direction width B2. Among them, the first edge chamfer angle Ang1 and the second edge chamfer angle Ang2 are respectively the angles formed by the chamfer bevel of the first edge 2a and the chamfer bevel of the second edge 2b and the surface of the wafer 2, the first edge chamfer radial surface width A1 and the second edge chamfer radial surface width A2 are respectively the widths of the chamfer bevel of the first edge 2a and the chamfer bevel of the second edge 2b in the radial direction of the wafer 2, and the first edge chamfer thickness direction surface width B1 and the second edge chamfer thickness direction surface width B2 are respectively the widths of the chamfer bevel of the first edge 2a and the chamfer bevel of the second edge 2b in the thickness direction of the wafer 2. In addition, the surface width BC is the width of the circumferential end surface of the edge of the wafer 2 in the thickness direction of the wafer 2.

[0051] For example, it is assumed that according to the original first relative motion and second relative motion modes, the first edge 2a of the wafer 2 is chamfered only by the first relative motion through the grinding unit 100. If additional changes are made, on the basis of keeping the above-mentioned first relative motion unchanged, by adjusting the first feeding unit 20 and the second feeding unit 30, the first relative motion and the second relative motion for further chamfering the first edge 1a are successively added. Compared with the original first relative motion and the second relative motion modes, the first edge 2a of the wafer 2 is chamfered only by the first relative motion through the grinding unit 100. Figure 3 , Figure 4 It can be seen that the chamfering of the wafer 2 is as follows: the first edge chamfer angle Ang1 remains unchanged, the first edge chamfer radial width A1 and the first edge chamfer thickness direction width B1 both increase, and the surface width BC decreases.

[0052] Reference Figure 5 In (b), when the target chamfer morphology of the wafer 2 is an R-type chamfer and the morphology of the grinding part 100 corresponds to the above-mentioned R-type target chamfer morphology, the chamfer morphology of the first edge 2a is characterized by the first edge chamfer angle Ang1, the first edge chamfer radial width A1, the first edge chamfer thickness direction width B1, and the first edge chamfer curvature radius R1, and the chamfer morphology of the second edge 2b is characterized by the second edge chamfer angle Ang2, the second edge chamfer radial width A2, the second edge chamfer thickness direction width B2, and the second edge chamfer curvature radius R2. Among them, the first edge chamfer angle Ang1 and the second edge chamfer angle Ang2 are respectively the angles formed by the chamfered surface of the first edge 2a and the chamfered surface of the second edge 2b closest to the surface of the wafer 2 and the surface of the wafer 2, the first edge chamfer radial surface width A1 and the second edge chamfer radial surface width A2 are respectively the widths of the chamfered surface of the first edge 2a and the chamfered surface of the second edge 2b in the radial direction of the wafer 2, and the first edge chamfer thickness direction surface width B1 and the second edge chamfer thickness direction surface width B2 are respectively the widths of the chamfered surface of the first edge 2a and the chamfered surface of the second edge 2b in the thickness direction of the wafer 2. The first edge chamfer curvature radius R1 and the second edge chamfer curvature radius R2 are respectively the curvature radii of the chamfered surface of the first edge 2a and the chamfered surface of the second edge 2b. In addition, the surface width BC is the width of the circumferential end surface of the edge of the wafer 2 in the thickness direction of the wafer 2.

[0053] Exemplarily, it is assumed that according to the original first relative motion and second relative motion modes, the first edge 2a of the wafer 2 is chamfered only by the first relative motion through the grinding unit 100. If additional changes are made, on the basis of keeping the above-mentioned first relative motion unchanged, the first relative motion and the second relative motion for further chamfering the first edge 1a are successively added, and compared with the original first relative motion and second relative motion modes, the chamfering of the wafer 2 is as follows: the first edge chamfering angle Ang1, the first edge chamfering radial surface width A1 and the first edge chamfering thickness direction surface width B1 are increased, and the surface width BC is reduced.

[0054] It is easy to understand that in the above example, the first feeding unit 20 and the second feeding unit 30 are adjusted to control the first relative motion and the second relative motion to achieve the chamfer morphology control of the first edge 2a of the wafer 2. The above method can also achieve the chamfer morphology control of the second edge 2b of the wafer 2.

[0055] In the above manner, the first feeding unit 20 and the second feeding unit 30 can adjust the chamfer angle and chamfer width of the first edge 2a and the second edge 2b of the wafer 2 by respectively controlling the first relative movement and the second relative movement, that is, adjust the chamfer morphology of the wafer 2.

[0056] It should be noted that the above-mentioned control of the chamfer morphology of the wafer 2 is based on the morphology of the grinding part 100. For example, when the grinding part 100 is a straight inclined surface with an inclination angle of θ, the above-mentioned method can obtain an edge chamfer angle within the range of θ±0.5°.

[0057] In some embodiments, the grinding part 100 is used to sequentially chamfer the first edge 2 a and the second edge 2 b of the wafer 2 .

[0058] In this way, the chamfering process can be made simpler, which facilitates more accurate control of the chamfering process and improves the chamfering efficiency.

[0059] In some embodiments, the grinding part 100 includes a first grinding surface 100a and a second grinding surface 100b, and the first grinding surface 100a and the second grinding surface 100b are used to chamfer the first edge 2a and the second edge 2b, respectively.

[0060] In this way, different grinding surfaces are used to chamfer the first edge 2a and the second edge 2b of the wafer 2, so as to achieve different chamfering requirements for the first edge 2a and the second edge 2b, and avoid the first edge 2a and the second edge 2b being ground at the same position of the grinding part 100, which may lead to a decrease in the reliability of the chamfering process.

[0061] In some embodiments, reference Figures 6 to 8 The grinding part 100 is a U-shaped inner groove of the grinding wheel 10, and the first grinding surface 100a and the second grinding surface 100b are respectively located on both sides of the center plane 100c of the U-shaped inner groove. The center plane 100c is a plane that is equidistant from the inner groove wall on the first grinding surface 100a side and the inner groove wall on the second grinding surface 100b side of the U-shaped inner groove.

[0062] In this way, the upper edge 1a and the lower edge 1b of the wafer 1 can be chamfered successively by sequentially contacting the first grinding surface 100a and the second grinding surface 100b respectively.

[0063] Furthermore, by placing the first grinding surface 100a and the second grinding surface 100b on both sides of the central plane 100c, it is possible to better avoid using the first grinding surface 100a to chamfer the second edge 2b and the second grinding surface 100b to chamfer the first edge 2a.

[0064] In some embodiments, the first grinding surface 100a and the second grinding surface 100b are straight inclined surfaces or curved surfaces.

[0065] like Figure 6As shown, when the first grinding surface 100a and the second grinding surface 100b are both straight inclined surfaces, it is possible to process the wafer 2 to obtain a T-shaped chamfer, for example.

[0066] like Figure 7 As shown, when the first grinding surface 100a and the second grinding surface 100b are both straight inclined surfaces, it is possible to process the wafer 2 to obtain an R-shaped chamfer, for example.

[0067] like Figure 8 As shown, when one of the first grinding surface 100 a and the second grinding surface 100 b is a straight inclined surface and the other is a curved surface, it is possible to obtain an asymmetric chamfer on the wafer 2 , for example.

[0068] In some embodiments, a driving unit is further included, and the driving unit is used to rotate at least one of the grinding wheel 10 and the wafer 2 around its own central axis, so that the grinding part 100 chamfers the wafer 2. In this way, the chamfering of the edge of the wafer 2 can be completed by the relative rotation of the grinding wheel 10 and the wafer 2. For example, different relative rotation speeds of the grinding wheel 10 and the wafer 2 can be selected according to different chamfering requirements corresponding to different materials of the wafer 2.

[0069] It is conceivable that the drive unit is used to rotate the grinding wheel 10 around its own central axis. For example, the chamfering of the edge of the non-rotating wafer 2 can be completed by the rotation of the grinding wheel 10. In this way, the rotation speed of the grinding wheel 10 around its own central axis is controlled by the drive unit, that is, the relative rotation speed of the grinding wheel 10 and the wafer 2 can be controlled, thereby controlling the chamfering process.

[0070] According to another aspect of the present disclosure, a method for chamfering a wafer is also proposed, comprising: Produce a first relative movement between the grinding wheel 10 and the wafer 2 in the radial direction of the wafer 2 to chamfer at least a first edge 2a of the wafer 2 by removing material of the wafer 2 along the radial direction of the wafer 2 through the grinding portion 100 of the grinding wheel 10; and A second relative movement is generated between the grinding wheel 10 and the wafer 2 in the thickness direction of the wafer 2 , so that the second edge 2 b of the wafer 2 is chamfered by removing material of the wafer 2 along the thickness direction of the wafer 2 through the grinding unit 100 .

[0071] For example, Fig. 9 As shown, according to the above method, the wafer 2 can be chamfered according to the following steps: By causing a first relative motion and an optional second relative motion between the grinding wheel 10 and the wafer 2, the first edge 2a of the wafer 2 is chamfered in a manner that the grinding portion 100 of the grinding wheel 10 removes material of the wafer 2 along the radial direction of the wafer 2 and the optional thickness direction, so as to obtain a first edge chamfer radial width A1, a first edge chamfer thickness direction width B1 and a first edge chamfer angle Ang1 of the wafer 2 within a target range; Produce a second relative movement between the grinding wheel 10 and the wafer 2 to position the second edge 2 b of the wafer 2 so as to chamfer the second edge 2 b of the wafer 2 in the next step; and By generating a first relative motion and a second relative motion between the grinding wheel 10 and the wafer 2, the second edge 2b of the wafer 2 is chamfered in a manner that the grinding portion 100 of the grinding wheel 10 removes material from the wafer 2 along the radial direction and the thickness direction of the wafer 2, so as to obtain the second edge chamfer radial surface width A2, the second edge chamfer thickness direction surface width B2 and the second edge chamfer angle Ang2 of the wafer 2 within the target range, thereby obtaining the surface width BC of the wafer 2 within the target range.

[0072] In some embodiments, when the grinding portion 100 of the grinding wheel 10 is a curved surface, the method further comprises: Determine the initial radius of curvature of the surface; Determining a target radius of curvature of a target chamfer of wafer 2; Determine the number of times the grinding part 100 where the curved surface corresponding to the target curvature radius is located according to the change rule of the initial curvature radius and the curvature radius of the curved surface with the number of times of use; and The grinding unit 100 that has been used the above number of times is selected for chamfering.

[0073] Specifically, the life of the grinding part 100 of the grinding wheel 10 can be quantitatively characterized by the number of uses. After processing a number of wafers 2, the grinding part 100 cannot process the wafer 2 again without reshaping. For the curved surface configuration grinding part 100, during its life cycle, the radius of curvature of the grinding part 100 gradually increases with the advancement of the life cycle, that is, the increase in the number of uses. Therefore, it is possible to summarize and statistically obtain a curve graph of the change of the radius of curvature of the grinding part 100 with the advancement of the life cycle. Subsequently, according to the radius of curvature of the desired chamfered morphology of the wafer 2, the life stage of the grinding part 100 with the corresponding radius of curvature can be determined in the above curve graph, and the grinding part 100 with the number of uses corresponding to the life stage is selected for chamfering.

[0074] In this way, the chamfer size deviation caused by the wear of the grinding part 100 during use can be avoided, so that the chamfer morphology parameters have better consistency.

[0075] It is understandable that, in the above-mentioned embodiment, the life of the grinding portion 100 of the grinding wheel 10 can also be quantitatively characterized by the working time.

[0076] In some implementations, when there are multiple wafers, the method further includes: After the first edges 2 a of all wafers 2 are chamfered, the second edges 2 b of all wafers 2 are chamfered.

[0077] In this way, after the first edges 2a of all wafers 2 are chamfered, the second edges 2b of all wafers 2 are chamfered uniformly, so that the chamfering morphology data obtained for all wafers 2 in this batch can be more consistent and stable.

[0078] In the present disclosure, although the present disclosure has been described with reference to exemplary embodiments, it should be understood that the present disclosure is not limited to the specific embodiments described and shown in detail herein. Those skilled in the art may make various changes to the exemplary embodiments without departing from the scope defined by the claims of the present disclosure.

[0079] The features mentioned and / or shown in the above description of the exemplary embodiments of the present disclosure may be combined in the same or similar manner into one or more other embodiments, combined with the features in other embodiments or substituted for the corresponding features in other embodiments. The technical solutions obtained by these combinations or substitutions shall also be deemed to be included in the protection scope of the present disclosure.

Claims

1. A device for chamfering a wafer, characterized in that: The device comprises: a grinding wheel having a grinding portion; a first feeding unit, the first feeding unit being used to cause a first relative movement between the grinding wheel and the wafer in a radial direction of the wafer, so as to chamfer at least a first edge of the wafer by removing material of the wafer along the radial direction of the wafer through the grinding portion; A second feeding unit is used to generate a second relative movement between the grinding wheel and the wafer in the thickness direction of the wafer, so as to chamfer the second edge of the wafer by removing material of the wafer along the thickness direction of the wafer through the grinding part.

2. The device for chamfering a wafer according to claim 1, characterized in that: The first feeding unit and the second feeding unit are used to adjust the chamfer morphology of the wafer by controlling the first relative movement and the second relative movement, respectively.

3. The device for chamfering a wafer according to claim 2, characterized in that: The first feeding unit and the second feeding unit are used to adjust the chamfering angle and chamfering width of the wafer by controlling the first relative movement and the second relative movement, respectively.

4. The device for chamfering a wafer according to claim 1, characterized in that: The grinding part is used to chamfer the first edge and the second edge of the wafer in sequence.

5. The device for chamfering a wafer according to claim 4, characterized in that: The grinding portion includes a first grinding surface and a second grinding surface, and the first grinding surface and the second grinding surface are used to chamfer the first edge and the second edge respectively.

6. The device for chamfering a wafer according to claim 5, characterized in that: The grinding portion is a U-shaped inner groove of the grinding wheel, and the first grinding surface and the second grinding surface are respectively located on two sides of a central plane of the U-shaped inner groove.

7. The device for chamfering a wafer according to claim 6, characterized in that: The first grinding surface and the second grinding surface are straight inclined surfaces or curved surfaces.

8. The device for chamfering a wafer according to claim 1, characterized in that: The device further includes a driving unit, which is used to rotate at least one of the grinding wheel and the wafer around its central axis, so that the grinding part chamfers the wafer.

9. The device for chamfering a wafer according to claim 8, characterized in that: The driving unit is used to rotate the grinding wheel around its central axis.

10. A method for chamfering a wafer, characterized in that: The method comprises: Produce a first relative movement between the grinding wheel and the wafer in a radial direction of the wafer to chamfer at least a first edge of the wafer by removing material of the wafer along the radial direction of the wafer through the grinding portion of the grinding wheel; and A second relative movement is generated between the grinding wheel and the wafer in the thickness direction of the wafer, so that the second edge of the wafer is chamfered in a manner that the grinding part removes material of the wafer along the thickness direction of the wafer.

11. The method for chamfering a wafer according to claim 10, characterized in that: In the case where the grinding portion of the grinding wheel is a curved surface, the method further comprises: determining an initial radius of curvature of the curved surface; Determining a target radius of curvature of a target chamfer of the wafer; Determining the number of times the grinding portion where the curved surface corresponding to the target curvature radius is located is used according to the change rule of the initial curvature radius and the curvature radius of the curved surface with the number of times of use; and The grinding portion that has been used the number of times is selected for chamfering.

12. The method for chamfering a wafer according to claim 10, characterized in that: In the case where there are multiple wafers, the method includes: After the first edges of all the wafers are chamfered, the second edges of all the wafers are chamfered.

Images