Copper particles

Abstract

To provide a copper fine particle that has excellent oxidation resistance and suppresses oxidation even when held at calcination temperature in an oxygen-containing atmosphere and yet causes sintering.SOLUTION: A copper fine particle has a particle diameter of 10 to 100 nm, has a surface coating, and, after held in an oxygen-containing atmosphere at a temperature of 400°C for 1 hour, has a particle diameter exceeding 100 nm while maintaining the state of copper.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to nano-sized copper fine particles having a particle size of 10 to 100 nm, and in particular to copper fine particles having excellent oxidation resistance and sinterability. [Background technology]

[0002] Currently, various types of fine particles are used for various purposes. For example, fine particles such as metal fine particles, oxide fine particles, nitride fine particles, and carbide fine particles are used in electrical insulating materials such as various electrical insulating parts, cutting tools, machining materials, functional materials such as sensors, sintered materials, electrode materials for fuel cells, and catalysts. Furthermore, touch panels that are used in combination with a display device such as a liquid crystal display device and a touch panel are becoming widespread in tablet computers, smartphones, etc. As a touch panel, a touch panel having electrodes made of metal has been proposed. For example, in the touch panel of Patent Document 1, the touch panel electrodes are made of conductive ink, and a silver ink composition is exemplified as the conductive ink.

[0003] Furthermore, in touch panels that require flexibility, the substrate is also required to be flexible, and general-purpose resins such as PET (polyethylene terephthalate) and PE (polyethylene) are required to be used. When general-purpose resins such as PET and PE are used for the substrate, the heat resistance is lower than when glass or ceramics is used for the substrate, and therefore it is necessary to form the electrodes at a lower temperature. For example, Patent Document 2 describes a copper particulate material that sinters and exhibits electrical conductivity when heated at a temperature of 150°C or less in a nitrogen atmosphere. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2016-71629 A [Patent Document 2] JP 2016-14181 A Summary of the Invention [Problem to be solved by the invention]

[0005] Copper is known to be easily oxidized, and it is necessary to consider the oxidation resistance of copper. Patent Document 2 takes into consideration storage stability in air. Copper microparticles are heated and sintered, and in Patent Document 2, they are sintered in a nitrogen atmosphere. When sintering in a nitrogen atmosphere, the nitrogen concentration needs to be high to prevent oxygen from being included. In this case, it is necessary to use nitrogen gas with high purity, which increases costs, but Patent Document 2 does not take into consideration the inclusion of oxygen in the nitrogen atmosphere. Patent Document 2 does not take into consideration oxidation when held at the sintering temperature in an oxygen-containing atmosphere. Thus, at present, there are no copper microparticles that take into consideration the oxidation resistance and sinterability when held at the sintering temperature in an oxygen-containing atmosphere.

[0006] The object of the present invention is to solve the problems associated with the prior art described above, and to provide copper microparticles that have excellent oxidation resistance, are inhibited from oxidation even when held at a firing temperature in an oxygen-containing atmosphere, and yet undergo sintering. [Means for solving the problem]

[0007] In order to achieve the above-mentioned object, the present invention provides copper microparticles having a particle diameter of 10 to 100 nm, having a surface coating, and having a particle diameter exceeding 100 nm while maintaining the copper state after being held in an oxygen-containing atmosphere at a temperature of 400°C for 1 hour. The particle size is preferably 10 to 90 nm. When the surface coating is fired at 350° C. in a nitrogen atmosphere with an oxygen concentration of 3 ppm, 60% by mass or more of the surface coating is preferably removed. For example, the surface coating is composed of organic substances produced by the thermal decomposition of organic acids. The organic acid is preferably composed of only C, O and H. The organic acid is preferably at least one of L-ascorbic acid, formic acid, glutaric acid, succinic acid, oxalic acid, DL-tartaric acid, lactose monohydrate, maltose monohydrate, maleic acid, D-mannitol, citric acid, malic acid and malonic acid. Among these, the organic acid is, for example, citric acid. When the fine particles were pressed at 127 MPa for 1 minute to produce a pellet, the pellet was kept in an oxygen-containing atmosphere at 300°C for 1 hour, and the volume resistivity was 4.0×10 -5 It is preferable that the resistivity is Ωcm or less. The oxygen-containing atmosphere is preferably a nitrogen atmosphere with an oxygen concentration of 3 ppm to 100 ppm. Effect of the Invention

[0008] According to the present invention, it is possible to obtain copper fine particles which are excellent in oxidation resistance, and which are inhibited from being oxidized even when held at a firing temperature in an oxygen-containing atmosphere, and which are sintered. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic diagram showing an example of a fine particle production apparatus used in the copper fine particle production method of the present invention. FIG. [Diagram 2] 1 is a schematic diagram showing copper fine particles of the present invention. [Diagram 3] (a) is a schematic diagram showing copper microparticles of the present invention after being held in a nitrogen atmosphere with an oxygen concentration of 3 ppm at a temperature of 400°C for 1 hour, and (b) is a schematic diagram showing copper microparticles of the present invention after being held in a nitrogen atmosphere with an oxygen concentration of 100 ppm at a temperature of 400°C for 1 hour. [Figure 4] FIG. 2 is a schematic diagram showing copper particulates of Conventional Example 1. [Diagram 5] (a) is a schematic diagram showing the copper microparticles of Conventional Example 1 after being held in a nitrogen atmosphere with an oxygen concentration of 3 ppm at a temperature of 400°C for 1 hour, and (b) is a schematic diagram showing the copper microparticles of Conventional Example 1 after being held in a nitrogen atmosphere with an oxygen concentration of 100 ppm at a temperature of 400°C for 1 hour. [Figure 6]1 is a graph showing the results of analysis of the crystal structures of the copper microparticles of the present invention and the copper microparticles of Conventional Example 1 by X-ray diffraction method. [Figure 7] This is a graph showing the results of crystal structure analysis by X-ray diffraction of copper microparticles of the present invention after being held in a nitrogen atmosphere with an oxygen concentration of 3 ppm at a temperature of 400°C for 1 hour, and copper microparticles of the present invention after being held in a nitrogen atmosphere with an oxygen concentration of 100 ppm at a temperature of 400°C for 1 hour. [Figure 8] 1 is a graph showing the removal rate of surface coating of copper microparticles of the present invention and copper microparticles of Conventional Example 1 in a nitrogen atmosphere with an oxygen concentration of 3 ppm. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The copper microparticles and the method for producing the copper microparticles of the present invention will be described in detail below with reference to the preferred embodiments shown in the accompanying drawings. Hereinafter, an example of the method for producing copper fine particles of the present invention will be described. Fig. 1 is a schematic diagram showing an example of a fine particle production apparatus used in the copper fine particle production method of the present invention. A fine particle production apparatus 10 shown in Fig. 1 (hereinafter simply referred to as production apparatus 10) is used for producing copper fine particles.

[0011] The manufacturing apparatus 10 comprises a plasma torch 12 that generates thermal plasma, a material supply device 14 that supplies raw powder of copper fine particles into the plasma torch 12, a chamber 16 that functions as a cooling tank for generating primary copper fine particles 15, an acid supply section 17, a cyclone 19 that removes coarse particles having a particle size equal to or larger than an arbitrarily specified particle size from the primary copper fine particles 15, and a recovery section 20 that recovers secondary copper fine particles 18 having a desired particle size classified by the cyclone 19. The primary copper fine particles 15 before the organic acid is supplied are in the middle of the production of the copper fine particles of the present invention, and the secondary copper fine particles 18 correspond to the copper fine particles of the present invention. For example, various devices disclosed in JP-A-2007-138287 can be used for the material supply device 14, chamber 16, cyclone 19, and recovery section 20. The primary copper particles 15 are also simply referred to as primary particles 15.

[0012] In this embodiment, copper powder is used as a raw material powder for producing copper microparticles. The copper powder has an average particle size appropriately set so that it can be easily evaporated in a thermal plasma flame. The average particle size is measured using a laser diffraction method and is, for example, 100 μm or less, preferably 10 μm or less, and more preferably 5 μm or less.

[0013] The plasma torch 12 is composed of a quartz tube 12a and a high-frequency oscillation coil 12b surrounding the outside of the quartz tube 12a. A supply pipe 14a (described later) is provided in the center of the upper part of the plasma torch 12 for supplying raw powder of copper fine particles into the plasma torch 12. A plasma gas supply port 12c is formed in the peripheral part (on the same circumference) of the supply pipe 14a, and the plasma gas supply port 12c is ring-shaped.

[0014] The plasma gas supply source 22 supplies plasma gas into the plasma torch 12, and has, for example, a first gas supply unit 22a and a second gas supply unit 22b. The first gas supply unit 22a and the second gas supply unit 22b are connected to the plasma gas supply port 12c via a pipe 22c. The first gas supply unit 22a and the second gas supply unit 22b are each provided with a supply amount adjustment unit such as a valve for adjusting the supply amount, although not shown. The plasma gas is supplied into the plasma torch 12 from the plasma gas supply source 22 through the ring-shaped plasma gas supply port 12c in the directions indicated by the arrows P and S.

[0015] For example, a mixed gas of hydrogen gas and argon gas is used as the plasma gas. In this case, hydrogen gas is stored in the first gas supply unit 22a, and argon gas is stored in the second gas supply unit 22b. Hydrogen gas is supplied from the first gas supply unit 22a of the plasma gas supply source 22, and argon gas is supplied from the second gas supply unit 22b through the plasma gas supply port 12c via the pipe 22c, and is supplied into the plasma torch 12 from the directions indicated by the arrows P and S. Note that only argon gas may be supplied in the direction indicated by the arrow P. When a high-frequency voltage is applied to the high-frequency oscillation coil 12 b , a thermal plasma flame 24 is generated in the plasma torch 12 .

[0016] The temperature of the thermal plasma flame 24 must be higher than the boiling point of the raw material powder. On the other hand, the higher the temperature of the thermal plasma flame 24, the easier it is for the raw material powder to become in a gaseous state, so this is preferable, but the temperature is not particularly limited. For example, the temperature of the thermal plasma flame 24 can be set to 6000°C, and theoretically it is thought to reach about 10000°C. The pressure atmosphere in the plasma torch 12 is preferably equal to or lower than atmospheric pressure. Here, the pressure atmosphere equal to or lower than atmospheric pressure is not particularly limited, but is, for example, 0.5 to 100 kPa.

[0017] The outside of the quartz tube 12a is surrounded by a concentric tube (not shown), and cooling water is circulated between this tube and the quartz tube 12a to water-cool the quartz tube 12a and prevent the quartz tube 12a from becoming too hot due to the thermal plasma flame 24 generated in the plasma torch 12.

[0018] The material supply device 14 is connected to the upper part of the plasma torch 12 via a supply pipe 14a. The material supply device 14 supplies raw material powder, for example, in the form of powder, into a thermal plasma flame 24 in the plasma torch 12. As the material supplying device 14 that supplies copper powder in the form of powder as the raw material powder, for example, the one disclosed in JP 2007-138287 A can be used as described above. In this case, the material supplying device 14 has, for example, a storage tank (not shown) that stores copper powder, a screw feeder (not shown) that transports a fixed amount of copper powder, a dispersing section (not shown) that disperses the copper powder transported by the screw feeder into a state of primary particles before it is finally spread, and a carrier gas supply source (not shown).

[0019] Copper powder is supplied together with carrier gas under extrusion pressure from a carrier gas supply source through a supply tube 14a into a hot plasma flame 24 in the plasma torch 12. The configuration of the material supply device 14 is not particularly limited as long as it can prevent the copper powder from agglomerating and can disperse the copper powder into the plasma torch 12 while maintaining the copper powder in a dispersed state. For the carrier gas, an inert gas such as argon gas is used. The flow rate of the carrier gas can be controlled using a flow meter such as a float type flow meter. The flow rate value of the carrier gas refers to the scale value of the flow meter.

[0020] The chamber 16 is provided adjacent to and below the plasma torch 12, and is connected to a gas supply device 28. Primary copper particles 15 are generated in the chamber 16. The chamber 16 also functions as a cooling tank.

[0021] The gas supply device 28 supplies a cooling gas into the chamber 16. The gas supply device 28 has a first gas supply source 28a and a pipe 28c, and further has a pressure applying means (not shown) such as a compressor or a blower that applies an extrusion pressure to the cooling gas to be supplied into the chamber 16. Also, a pressure control valve 28d is provided to control the amount of gas supplied from the first gas supply source 28a. For example, argon gas is stored in the first gas supply source 28a. In this case, the cooling gas is argon gas.

[0022] The gas supply device 28 supplies argon gas as a cooling gas in the direction of arrow Q at an angle of, for example, 45° toward the tail of the thermal plasma flame 24, i.e., the end of the thermal plasma flame 24 opposite the plasma gas supply port 12c, i.e., the terminal end of the thermal plasma flame 24, and also supplies the above-mentioned cooling gas from above to below along the inner wall 16a of the chamber 16, i.e., in the direction of arrow R shown in FIG. 1.

[0023] The copper powder that has been put into a gaseous state by the thermal plasma flame 24 is quenched by the cooling gas supplied from the gas supply device 28 into the chamber 16, to obtain primary copper particles 15. In addition to this, the above-mentioned cooling gas has an additional effect of contributing to the classification of the primary particles 15 in the cyclone 19. The cooling gas is, for example, argon gas. If the copper primary particles 15 collide with each other immediately after generation and form aggregates, resulting in non-uniform particle sizes, this will cause a decrease in quality. However, the mixed gas supplied as a cooling gas in the direction of arrow Q toward the tail (end) of the thermal plasma flame dilutes the primary particles 15, preventing the particles from colliding with each other and agglomerating. In addition, the mixed gas supplied as a cooling gas in the direction of arrow R prevents the primary particles 15 from adhering to the inner wall 16a of the chamber 16 during the recovery process of the primary particles 15, improving the yield of the generated primary particles 15.

[0024] Hydrogen gas may be added to the argon gas used as the cooling gas. In this case, a second gas supply source (not shown) and a pressure control valve (not shown) for controlling the amount of gas supply are further provided, and hydrogen gas is stored in the second gas supply source. For example, a predetermined amount of hydrogen gas may be supplied from at least one of the arrows Q and R.

[0025] The acid supplying section 17 supplies an organic acid to the primary copper particles 15 obtained by quenching with a cooling gas. The organic acid is supplied to a temperature range higher than the decomposition temperature of the organic acid, which is generated by quenching a thermal plasma having a temperature of about 10,000°C, and is thermally decomposed, and precipitates on the primary particles 15 as an organic substance containing hydrocarbons (CnHm) and carboxyl groups (-COOH) or hydroxyl groups (-OH) that impart hydrophilicity and acidity. As a result, copper particles having acidic properties are obtained. The configuration of the acid supplying unit 17 is not particularly limited as long as it can provide an organic acid to the primary copper particles 15. For example, an aqueous solution of an organic acid is used, and the acid supplying unit 17 sprays the aqueous solution of an organic acid into the chamber 16. The acid supply unit 17 has a container (not shown) for storing an aqueous solution of an organic acid (not shown), and a spray gas supply unit (not shown) for turning the aqueous solution of an organic acid in the container into droplets. In the spray gas supply unit, the aqueous solution is turned into droplets using a spray gas, and the dropletized aqueous solution of an organic acid AQ is supplied to the primary copper particles 15 in the chamber 16.

[0026] In the case of an aqueous solution of an organic acid, for example, pure water is used as the solvent. The organic acid is preferably water-soluble and has a low boiling point, and is preferably composed only of C, O, and H. Examples of organic acids include L-ascorbic acid (C6H8O6), formic acid (CHO), glutaric acid (C5H8O4), succinic acid (C4H6O4), oxalic acid (C2H2O4), DL-tartaric acid (C4H6O6), lactose monohydrate, maltose monohydrate, maleic acid (C4H4O4), D-mannitol (C6H 14 Examples of the organic acids that can be used include carboxylic acid (C6H8O7), citric acid (C6H8O7), malic acid (C4H6O5), and malonic acid (C3H4O4). It is preferable to use at least one of the above organic acids. The spray gas for turning the aqueous solution of the organic acid into droplets is, for example, argon gas, but is not limited to argon gas and may be an inert gas such as nitrogen gas.

[0027] 1, the chamber 16 is provided with a cyclone 19 for classifying the primary copper particles 15 to which the organic acid has been supplied into a desired particle size. The cyclone 19 includes an inlet pipe 19a for supplying the primary copper particles 15 from the chamber 16, a cylindrical outer cylinder 19b connected to the inlet pipe 19a and located at the top of the cyclone 19, a truncated cone section 19c that continues downward from the bottom of the outer cylinder 19b and has a gradually decreasing diameter, a coarse particle recovery chamber 19d connected to the bottom of the truncated cone section 19c for recovering coarse particles having a particle size equal to or larger than the desired particle size, and an inner pipe 19e connected to a recovery section 20 described later and protruding from the outer cylinder 19b.

[0028] An airflow containing primary fine particles 15 is blown from the inlet pipe 19a of the cyclone 19 along the inner circumferential wall of the outer cylinder 19b, and as a result, this airflow flows from the inner circumferential wall of the outer cylinder 19b toward the truncated cone portion 19c as shown by the arrow T in Figure 1, forming a downward swirling flow. When the descending swirling flow reverses and becomes an ascending flow, the coarse particles cannot join the ascending flow due to the balance between centrifugal force and drag, and so they descend along the side surface of the truncated cone portion 19c and are collected in the coarse particle collection chamber 19d. Fine particles that are more affected by drag than centrifugal force are discharged from the inner pipe 19e to the outside of the system together with the ascending flow on the inner wall of the truncated cone portion 19c.

[0029] Also, a negative pressure (suction force) is generated through the inner tube 19e from the collection section 20, which will be described later in detail. By this negative pressure (suction force), the copper fine particles separated from the above-mentioned swirling air current are sucked in as indicated by the symbol U, and are sent to the collection section 20 through the inner tube 19e.

[0030] A collection section 20 for collecting secondary fine particles (copper fine particles) 18 having a desired nanometer-order particle diameter is provided on the extension of inner tube 19e, which is the outlet of the airflow in cyclone 19. Collection section 20 includes collection chamber 20a, filter 20b provided in collection chamber 20a, and vacuum pump 30 connected via a tube provided below collection chamber 20a. Fine particles sent from cyclone 19 are sucked by vacuum pump 30 and drawn into collection chamber 20a, where they are collected while remaining on the surface of filter 20b. In addition, the number of cyclones used in the above-mentioned manufacturing apparatus 10 is not limited to one, and may be two or more.

[0031] Next, an example of a method for producing copper particulates using the above-mentioned production apparatus 10 will be described. First, for example, copper powder having an average particle size of 5 μm or less is charged into the material supply device 14 as raw powder of copper fine particles. For example, argon gas and hydrogen gas are used as the plasma gas, and a high-frequency voltage is applied to the high-frequency oscillation coil 12 b to generate a thermal plasma flame 24 in the plasma torch 12 . In addition, a cooling gas, for example, argon gas, is supplied from the gas supply device 28 to the tail of the thermal plasma flame 24, i.e., the end of the thermal plasma flame 24, in the direction of the arrow Q. At this time, argon gas is also supplied as a cooling gas in the direction of the arrow R. Next, the copper powder is gas-transported using, for example, argon gas as a carrier gas, and is supplied into the thermal plasma flame 24 in the plasma torch 12 via the supply pipe 14a. The supplied copper powder evaporates in the thermal plasma flame 24 and becomes a gas phase state, and is quenched by a cooling gas to generate primary copper particles 15 (copper particles). Furthermore, an aqueous solution of an organic acid in the form of liquid droplets is sprayed onto the primary copper particles 15 by the acid supply unit 17.

[0032] The primary copper particles 15 obtained in the chamber 16 are blown together with the airflow from the inlet pipe 19a of the cyclone 19 along the inner peripheral wall of the outer cylinder 19b, and the airflow flows along the inner peripheral wall of the outer cylinder 19b as indicated by the arrow T in Fig. 1, forming a swirling flow and descending. When the descending swirling flow reverses and becomes an ascending flow, the balance between the centrifugal force and the drag force prevents the coarse particles from joining the ascending flow, and they descend along the side of the truncated cone portion 19c and are collected in the coarse particle collection chamber 19d. The fine particles that are more affected by the drag force than the centrifugal force are discharged from the inner wall of the truncated cone portion 19c together with the ascending flow outside the system.

[0033] The discharged secondary fine particles (copper fine particles) 18 are sucked in the direction indicated by the symbol U in Fig. 1 by the negative pressure (suction force) from the collection section 20 by the vacuum pump 30, sent to the collection section 20 through the inner pipe 19e, and collected by the filter 20b of the collection section 20. At this time, the internal pressure in the cyclone 19 is preferably equal to or lower than atmospheric pressure. In addition, the particle diameter of the secondary fine particles (copper fine particles) 18 is specified to be any particle diameter on the order of nanometers depending on the purpose. In this way, copper fine particles having acidic properties can be easily and reliably obtained by simply subjecting copper powder to plasma treatment and then spraying an aqueous solution of an organic acid, for example. Although the primary copper particles are formed using a thermal plasma flame, the primary copper particles can be formed using a gas phase method. Therefore, as long as the method is a gas phase method, it is not limited to using a thermal plasma flame, and a manufacturing method in which the primary copper particles are formed by a flame method may be used. Moreover, the copper microparticles produced by the method for producing copper microparticles of this embodiment have a narrow particle size distribution, that is, have a uniform particle size, and are almost free of coarse particles of 1 μm or more.

[0034] Here, the flame method is a method of synthesizing fine particles by using a flame as a heat source and passing a copper-containing raw material through the flame. In the flame method, the copper-containing raw material is supplied to the flame, and a cooling gas is supplied to the flame to lower the temperature of the flame and suppress the growth of the copper particles, thereby obtaining primary copper fine particles 15. Furthermore, an organic acid is supplied to the primary fine particles 15 to produce copper fine particles. The cooling gas and organic acid may be the same as those used in the thermal plasma flame described above.

[0035] Next, the copper fine particles will be described. Fig. 2 is a schematic diagram showing copper microparticles of the present invention. Fig. 3(a) is a schematic diagram showing copper microparticles of the present invention after being held in a nitrogen atmosphere with an oxygen concentration of 3 ppm at a temperature of 400°C for 1 hour, and Fig. 3(b) is a schematic diagram showing copper microparticles of the present invention after being held in a nitrogen atmosphere with an oxygen concentration of 100 ppm at a temperature of 400°C for 1 hour. The copper fine particles have a particle diameter of 10 to 100 nm, have a surface coating, and after being held in an oxygen-containing atmosphere at a temperature of 400°C for 1 hour, the particle diameter exceeds 100 nm while maintaining the copper state. The above-mentioned particle diameter of 10 to 100 nm refers to a state in which the temperature corresponding to the firing temperature is not held, that is, a state in which there is no thermal history, and refers to a particle diameter in a state before being held in an oxygen-containing atmosphere at a temperature of 400°C for 1 hour. The above-mentioned particle diameter of 10 to 100 nm is preferably 10 to 90 nm. Furthermore, maintaining the copper state refers to a state in which the copper is not oxidized, and refers to the color of copper being maintained even after being held in an oxygen-containing atmosphere at a temperature of 400°C for 1 hour. The firing temperature refers to the temperature in a firing furnace.

[0036] The surface coating is composed of organic matter containing hydrocarbons (CnHm) and carboxyl groups (-COOH) or hydroxyl groups (-OH) that provide hydrophilic and acidic properties, which are produced by the thermal decomposition of organic acids. For example, the surface coating is composed of organic matter produced by the thermal decomposition of citric acid. The surface state of the fine particles can be examined, for example, by using an FT-IR (Fourier transform infrared spectrophotometer).

[0037] The copper fine particles have a form, for example, as shown in FIG. 2, and a particle diameter, for example, of 80 nm, before being held in an oxygen-containing atmosphere at a temperature of 400° C. for one hour. The above-mentioned oxygen-containing atmosphere is a nitrogen atmosphere with an oxygen concentration of 3 ppm to 100 ppm. If the nitrogen atmosphere has an oxygen concentration of 3 ppm to 100 ppm, there is no need to use nitrogen gas with high purity, and for example, nitrogen gas obtained using a commercial nitrogen gas generator can be used for the oxygen-containing atmosphere. The copper microparticles of the present invention are called nanoparticles, and the above-mentioned particle diameter is an average particle diameter measured using the BET method. The copper microparticles of the present invention are produced, for example, by the above-mentioned production method and obtained in a particle state. The copper microparticles of the present invention are not in a state of being dispersed in a solvent or the like, but exist as copper microparticles alone. Therefore, the combination with the solvent is not particularly limited, and the degree of freedom in selecting the solvent is high.

[0038] As described above, the copper microparticles have a particle diameter of 80 nm in the example shown in Fig. 2. After being held in an oxygen-containing atmosphere, for example, a nitrogen gas atmosphere with an oxygen concentration of 3 ppm at a temperature of 400°C for 1 hour, particle growth occurs due to sintering, as shown in Fig. 3(a), and the particle diameter is 118 nm. In addition, after being held for 1 hour in an oxygen-containing atmosphere, for example, a nitrogen gas atmosphere with an oxygen concentration of 100 ppm at a temperature of 400°C, particle growth occurs due to sintering as shown in Figure 3(b), and the particle diameter is 120 nm. Although not shown, the copper fine particles in Figures 3(a) and 3(b) do not turn black and have the color of copper. Thus, the copper fine particles of the present invention have excellent oxidation resistance, and even when held in an oxygen-containing atmosphere at a sintering temperature, they maintain their copper state without oxidation, and sintering occurs, allowing the particles to grow to 100 nm or more.

[0039] The copper fine particles of the present invention can be produced by using the above-mentioned production apparatus 10 and by using citric acid as the organic acid. Specifically, the copper microparticles were produced under the following conditions: plasma gas: argon gas 200 liters / min, hydrogen gas 5 liters / min, carrier gas: argon gas 5 liters / min, quenching gas: argon gas 150 liters / min, internal pressure: 40 kPa. The above-mentioned citric acid is prepared by using pure water as a solvent to prepare an aqueous solution containing citric acid (citric acid concentration 15 W / W%), which is sprayed onto the primary copper particles using argon gas as the spray gas.

[0040] Here, Fig. 4 is a schematic diagram showing the copper microparticles of Conventional Example 1. Fig. 5(a) is a schematic diagram showing the copper microparticles of Conventional Example 1 after being held in a nitrogen atmosphere with an oxygen concentration of 3 ppm at a temperature of 400°C for 1 hour, and Fig. 5(b) is a schematic diagram showing the copper microparticles of Conventional Example 1 after being held in a nitrogen atmosphere with an oxygen concentration of 100 ppm at a temperature of 400°C for 1 hour.

[0041] The copper microparticles of Conventional Example 1 shown in FIG. 4 have a particle diameter of 19 nm. For example, after being held in a nitrogen gas atmosphere with an oxygen concentration of 3 ppm at a temperature of 400° C. for 1 hour, no particle growth is observed as shown in FIG. 5(a), and the particle diameter is 21 nm. Also, for example, after being held in a nitrogen gas atmosphere with an oxygen concentration of 100 ppm at a temperature of 400° C. for 1 hour, no particle growth is observed as shown in FIG. 5(b), and the particle diameter is 22 nm. Thus, in the copper microparticles of Conventional Example 1, when held in an oxygen-containing atmosphere at a sintering temperature, particle growth by sintering cannot occur while maintaining high oxidation resistance. The copper microparticles of Conventional Example 1 can be produced by the same production method as the copper microparticle production method of the present invention, except that the cooling gas is a mixed gas of argon gas and methane gas.

[0042] Table 1 below shows the volume resistivity of pellets made from the copper microparticles of the present invention after they were held in a nitrogen atmosphere with oxygen concentrations of 3 ppm and 100 ppm at a temperature of 300°C for 1 hour. The pellets were made by pressing at 127 MPa for 1 minute using a press. The volume resistivity was measured using a 4-terminal 4-probe method.

[0043] [Table 1]

[0044] As described above, the copper fine particles of the present invention grow as particles and do not oxidize, and can be suitably used for conductors such as conductive wiring, etc. On the other hand, the copper fine particles of Conventional Example 1 do not oxidize, but do not grow as particles, and are not suitable for conductors such as conductive wiring, etc.

[0045] Fig. 6 is a graph showing the results of analysis of crystal structures by X-ray diffraction for the copper microparticles of the present invention and the copper microparticles of Conventional Example 1. Fig. 7 is a graph showing the results of analysis of crystal structures by X-ray diffraction for the copper microparticles of the present invention after being held in a nitrogen atmosphere with an oxygen concentration of 3 ppm at a temperature of 400°C for 1 hour, and the copper microparticles of the present invention after being held in a nitrogen atmosphere with an oxygen concentration of 100 ppm at a temperature of 400°C for 1 hour. 6, reference numeral 50 is a graph showing the results of analysis of the crystal structure of the copper microparticles of the present invention by X-ray diffraction, and reference numeral 51 is a graph showing the results of analysis of the crystal structure of the copper microparticles of Conventional Example 1 by X-ray diffraction. As shown in FIG. 6, the copper particulates of the present invention and Conventional Example 1 have the same diffraction peak position. In addition, numeral 55 in Figure 7 is a graph showing the results of analysis of the crystal structure of copper microparticles of the present invention by X-ray diffraction method after being held in a nitrogen atmosphere with an oxygen concentration of 3 ppm at a temperature of 400°C for 1 hour, and numeral 56 is a graph showing the results of analysis of the crystal structure of copper microparticles of the present invention by X-ray diffraction method after being held in a nitrogen atmosphere with an oxygen concentration of 100 ppm at a temperature of 400°C for 1 hour. In both a nitrogen atmosphere with an oxygen concentration of 3 ppm and a nitrogen atmosphere with an oxygen concentration of 100 ppm, oxidation is suppressed and the copper state is maintained even after being held at a temperature of 400° C. for 1 hour, demonstrating excellent oxidation resistance. This means that the copper fine particles can be sintered without using a reducing gas such as hydrogen, making it easy to control the atmosphere in which the copper fine particles are sintered.

[0046] FIG. 8 is a graph showing the removal ratio of the surface coating at each temperature of the copper microparticles of the present invention and the copper microparticles of Conventional Example 1 in a nitrogen atmosphere with an oxygen concentration of 3 ppm. In FIG. 8, reference numeral 60 indicates the copper microparticles of the present invention, and reference numeral 61 indicates the copper microparticles of Conventional Example 1. FIG. 8 was obtained based on the results obtained by simultaneous differential thermal analysis-thermogravimetry (TG-DTA). As shown in FIG. 8, the copper microparticles of the present invention (reference numeral 60) have the largest amount of surface coating removed, which suggests that there is little organic matter in the contact area of ​​the copper microparticles, and the particles grow when held at a temperature of 400° C. for 1 hour. As shown in FIG. 8, when the surface coating is baked in a nitrogen atmosphere with an oxygen concentration of 3 ppm, 60 mass % or more of the surface coating is removed at 350° C.

[0047] The copper microparticles of the present invention can be used as a conductor such as conductive wiring, but are not limited thereto. For example, when preparing a conductor such as conductive wiring, the copper microparticles can be mixed with copper particles having a particle diameter of the order of μm to function as an auxiliary agent for sintering the copper particles. In addition to conductors such as conductive wiring, the copper microparticles can also be used for things that require electrical conductivity, such as bonding between semiconductor elements, between semiconductor elements and various electronic devices, and between semiconductor elements and wiring layers.

[0048] The present invention is basically configured as described above. Although the method for producing copper microparticles and the copper microparticles of the present invention have been described in detail above, the present invention is not limited to the above-mentioned embodiments, and various improvements or modifications may be made without departing from the spirit and scope of the present invention. [Explanation of symbols]

[0049] 10 Fine particle manufacturing equipment 12 Plasma Torch 14 Material feeding device 15 Primary fine particles 16 Chamber 17 Acid supply section 18 Secondary fine particles 19. Cyclone 20 Collection Department 22 Plasma gas supply source 22a First gas supply unit 22b Second gas supply section 24 Hot Plasma Flame 28 Gas supply equipment 28a First gas supply source 30 Vacuum Pump AQ aqueous solution

Claims

1. The particle size is 10 to 100 nm, the surface is coated with a substance, and the particle has an acidic property. After being held in a nitrogen atmosphere with an oxygen concentration of 3 ppm to 100 ppm at a temperature of 400° C. for 1 hour, the particle size exceeds 100 nm while maintaining the copper state, the surface coating is composed of an organic substance containing a carboxyl group or a hydroxyl group formed by thermal decomposition and precipitation of an organic acid, The copper fine particles, wherein the particle size is an average particle size measured using a BET method.

2. 2. The copper microparticles according to claim 1, wherein the particle diameter is 10 to 90 nm.

3. The copper particulate material according to claim 1 or 2, wherein 60 mass % or more of the surface coating is removed at 350° C. when the surface coating is fired in a nitrogen atmosphere having an oxygen concentration of 3 ppm.

4. The organic acid is at least one of L-ascorbic acid, formic acid, glutaric acid, succinic acid, oxalic acid, DL-tartaric acid, lactose monohydrate, maltose monohydrate, maleic acid, D-mannitol, citric acid, malic acid, and malonic acid. The copper fine particles according to claim 1.

5. The copper particulate according to claim 1 , wherein the organic acid is citric acid.

6. When the copper fine particles are pressed at 127 MPa for 1 minute to produce a pellet, the pellet is held in a nitrogen atmosphere having an oxygen concentration of 3 ppm to 100 ppm at a temperature of 300°C for 1 hour, and the volume resistivity is 4.0 x 10 －５ The copper fine particles according to any one of claims 1 to 5, wherein the resistivity is 0.1 to 0.5 Ωcm or less.

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