Temperature measurement method

Abstract

To provide a temperature measurement with which it is possible to accurately measure the surface temperature of a substrate when irradiated with flash light.SOLUTION: When the surface of a semiconductor wafer held by a susceptor is irradiated with flash light from a flash lamp, the semiconductor wafer is rapidly warmed and vibrates. The radiant light radiated from the surface of the semiconductor wafer when irradiated with flash light is received by an upper radiation pyrometer, and received light intensity signal data outputted from the upper radiation pyrometer is converted to a frequency domain. Frequency components greater than or equal to a set value are reduced to zero in the frequency domain, and high-frequency components attributable to the vibration of the semiconductor wafer are thereby removed. The frequency domain data having had the high-frequency components removed is inverse-converted to the original time domain and temperature data is calculated on the basis of the obtained signal data, it is thereby made possible to accurately measure the surface temperature of the semiconductor wafer when irradiated with flash light.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present invention relates to a temperature measuring method for measuring the temperature of a thin precision electronic substrate (hereinafter simply referred to as "substrate") such as a semiconductor wafer, which changes when irradiated with a flash light from a flash lamp. [Background technology]

[0002] Flash lamp annealing (FLA), which heats semiconductor wafers in an extremely short time, has been attracting attention in the semiconductor device manufacturing process. Flash lamp annealing is a heat treatment technique that uses a xenon flash lamp (hereinafter, simply "flash lamp" means a xenon flash lamp) to irradiate the surface of a semiconductor wafer with a flash of light, thereby raising the temperature of only the surface of the semiconductor wafer in an extremely short time (several milliseconds or less).

[0003] The spectral distribution of radiation from a xenon flash lamp is in the ultraviolet to near infrared range, and has a shorter wavelength than conventional halogen lamps, which almost matches the fundamental absorption band of silicon semiconductor wafers. Therefore, when a semiconductor wafer is irradiated with flash light from a xenon flash lamp, there is little transmitted light, and it is possible to rapidly heat the semiconductor wafer. It has also been found that if the flash light is irradiated for an extremely short period of time, less than a few milliseconds, it is possible to selectively heat only the vicinity of the surface of the semiconductor wafer.

[0004] Such flash lamp annealing is used in processes that require heating for an extremely short time, such as activating impurities typically implanted in semiconductor wafers. By irradiating the surface of a semiconductor wafer into which impurities have been implanted by ion implantation with a flash light from a flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature for an extremely short time, and only the impurity activation can be performed without deep diffusion of the impurities.

[0005] Not only in flash lamp annealing, but in any heat treatment of semiconductor wafers, controlling the wafer temperature is important. In particular, in flash lamp annealing, only the vicinity of the surface of the semiconductor wafer is selectively heated, so it is important to measure the surface temperature of the semiconductor wafer W, which changes rapidly when irradiated with flash light. Since the device characteristics of the semiconductor wafer after irradiation with flash light are determined by the maximum temperature (peak temperature) reached on the wafer surface when irradiated with flash light, it is required to measure at least the maximum temperature reached. Patent Document 1 discloses a technology for accurately determining the emissivity of the surface of a semiconductor wafer and measuring the surface temperature of the semiconductor wafer when irradiated with flash light using a radiation thermometer. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2017-9450 A Summary of the Invention [Problem to be solved by the invention]

[0007] However, in flash lamp annealing, the surface of the semiconductor wafer is instantaneously irradiated with a flash light having extremely high energy, so that the surface temperature of the semiconductor wafer rises rapidly in an instant, while the backside temperature does not rise so much, and a temperature gradient occurs from the front side to the back side. As a result, a sudden thermal expansion occurs only near the front side of the semiconductor wafer, and the semiconductor wafer is suddenly deformed so that the upper surface becomes convex and warps. As a result, a phenomenon in which the semiconductor wafer vibrates on the susceptor that supports the semiconductor wafer has been confirmed. When the semiconductor wafer, which is the object of temperature measurement, vibrates, the intensity of the light received by the radiation thermometer varies, making it difficult to accurately measure the surface temperature of the semiconductor wafer when irradiated with flash light.

[0008] The present invention has been made in view of the above problems, and has a first object to provide a temperature measuring method capable of accurately measuring the surface temperature of a substrate when irradiated with flash light.

[0009] A second object of the present invention is to provide a temperature measuring method capable of accurately measuring the maximum temperature reached on the surface of a substrate when irradiated with flash light. [Means for solving the problem]

[0010] In order to solve the above problem, the invention of claim 1 provides a temperature measurement method for measuring a temperature of a substrate that changes due to irradiation with flash light, the method comprising: an irradiation step of irradiating a surface of the substrate with flash light from a flash lamp; a light receiving step of receiving, by a radiation thermometer, light radiated from the surface of the substrate during a measurement period including a predetermined period after the flash lamp starts to emit light; a conversion step of converting a signal output from the radiation thermometer into a frequency domain; a elimination step of reducing frequency components equal to or higher than a predetermined value in the frequency domain to zero; and an inverse conversion step of inversely converting the frequency domain into a time domain after the elimination step.

[0011] The invention of claim 2 provides a temperature measuring method for measuring a temperature of a substrate that changes due to irradiation with flash light, the method comprising: an irradiation step of irradiating a surface of the substrate with flash light from a flash lamp; a light receiving step of receiving, by a radiation thermometer, radiation light radiated from the surface of the substrate during a measurement period including a predetermined period after the start of emission of the flash lamp; and a temperature measuring step of measuring a temperature of the substrate that changes due to irradiation with flash light. Light receiving intensity signal data After the flash lamp starts emitting light, data of Set shift time and a phase adjustment step of shifting the phase by only one phase.

[0012] The invention of claim 3 provides the temperature measuring method according to claim 2, further comprising: Light receiving intensity signal dataa transformation step of transforming the frequency component having a predetermined value or more in the frequency domain into zero, and an inverse transformation step of transforming the frequency domain into a time domain after the inverse transformation step. Effect of the Invention

[0013] According to the invention of claim 1, the signal output from the radiation thermometer that receives the radiation emitted from the surface of the substrate is converted into the frequency domain, frequency components above a predetermined value in the frequency domain are set to zero, and the frequency domain is inversely converted into the time domain, so that high frequency components resulting from the vibration of the substrate can be removed and the surface temperature of the substrate when irradiated with flash light can be accurately measured.

[0014] According to the invention of claims 2 and 3, a radiation thermometer that receives radiation emitted from a surface of a substrate outputs Light receiving intensity signal data After the flash lamp starts emitting light, data of Set shift time Since the temperature is shifted by only the amount of the flash light, the maximum temperature reached on the surface of the substrate during flash light irradiation can be measured accurately. [Brief description of the drawings]

[0015] [Figure 1] 1 is a vertical cross-sectional view showing a configuration of a heat treatment apparatus for carrying out a temperature measuring method according to the present invention; [Diagram 2] FIG. 2 is a perspective view showing the overall appearance of a holding portion. [Diagram 3] FIG. [Figure 4] FIG. 2 is a cross-sectional view of a susceptor. [Diagram 5] FIG. [Figure 6] FIG. [Figure 7] FIG. 2 is a plan view showing an arrangement of a plurality of halogen lamps. [Figure 8] 4 is a flowchart showing a procedure for measuring the surface temperature of a semiconductor wafer according to the first embodiment. [Figure 9]FIG. 13 is a diagram showing an example of received light intensity signal data output from the upper radiation thermometer. [Figure 10] 10 is a diagram showing the result of converting the received light intensity signal data of FIG. 9 into a frequency domain. [Figure 11] FIG. 11 is a diagram showing the result of inversely transforming the frequency domain of FIG. 10 from which high frequency components have been cut, into the time domain. [Figure 12] 10 is a flowchart showing a procedure for measuring the surface temperature of a semiconductor wafer according to a second embodiment. [Figure 13] FIG. 13 is a diagram showing a phase shift in received light intensity signal data. [Figure 14] FIG. 13 is a diagram showing received light intensity signal data after a phase shift. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

[0017] First Embodiment Fig. 1 is a vertical cross-sectional view showing the configuration of a heat treatment apparatus 1 for carrying out a temperature measurement method according to the present invention. The heat treatment apparatus 1 in Fig. 1 is a flash lamp annealing apparatus that heats a disk-shaped semiconductor wafer W as a substrate by irradiating the semiconductor wafer W with flash light. The size of the semiconductor wafer W to be treated is not particularly limited, but is, for example, φ300 mm or φ450 mm (φ300 mm in this embodiment). In Fig. 1 and the subsequent figures, the dimensions and number of each part are exaggerated or simplified as necessary for ease of understanding.

[0018] The heat treatment apparatus 1 includes a chamber 6 that accommodates a semiconductor wafer W, a flash heating unit 5 that incorporates a plurality of flash lamps FL, and a halogen heating unit 4 that incorporates a plurality of halogen lamps HL. The flash heating unit 5 is provided on the upper side of the chamber 6, and the halogen heating unit 4 is provided on the lower side. The heat treatment apparatus 1 also includes, inside the chamber 6, a holding unit 7 that holds the semiconductor wafer W in a horizontal position, and a transfer mechanism 10 that transfers the semiconductor wafer W between the holding unit 7 and the outside of the apparatus. The heat treatment apparatus 1 also includes a control unit 3 that controls the respective operating mechanisms provided in the halogen heating unit 4, the flash heating unit 5, and the chamber 6 to perform heat treatment of the semiconductor wafer W.

[0019] The chamber 6 is configured by mounting quartz chamber windows on the top and bottom of a cylindrical chamber side portion 61. The chamber side portion 61 has a roughly cylindrical shape with openings at the top and bottom, with an upper chamber window 63 mounted and closed at the upper opening, and a lower chamber window 64 mounted and closed at the lower opening. The upper chamber window 63 constituting the ceiling of the chamber 6 is a disk-shaped member made of quartz, and functions as a quartz window that transmits the flash light emitted from the flash heating unit 5 into the chamber 6. The lower chamber window 64 constituting the floor of the chamber 6 is also a disk-shaped member made of quartz, and functions as a quartz window that transmits the light from the halogen heating unit 4 into the chamber 6.

[0020] In addition, a reflective ring 68 is attached to the upper part of the inner wall surface of the chamber side part 61, and a reflective ring 69 is attached to the lower part. Both of the reflective rings 68, 69 are formed in an annular shape. The upper reflective ring 68 is attached by fitting it from the upper side of the chamber side part 61. On the other hand, the lower reflective ring 69 is attached by fitting it from the lower side of the chamber side part 61 and fastening it with screws (not shown). In other words, both of the reflective rings 68, 69 are detachably attached to the chamber side part 61. The inner space of the chamber 6, i.e., the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side part 61, and the reflective rings 68, 69, is defined as a heat treatment space 65.

[0021] By mounting the reflecting rings 68, 69 on the chamber side portion 61, a recess 62 is formed on the inner wall surface of the chamber 6. That is, the recess 62 is formed by a central portion of the inner wall surface of the chamber side portion 61 where the reflecting rings 68, 69 are not mounted, the lower end surface of the reflecting ring 68, and the upper end surface of the reflecting ring 69. The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6, and surrounds the holder 7 that holds the semiconductor wafer W. The chamber side portion 61 and the reflecting rings 68, 69 are formed from a metal material (e.g., stainless steel) that has excellent strength and heat resistance.

[0022] Further, a transfer opening (furnace port) 66 for carrying a semiconductor wafer W into and out of the chamber 6 is formed in the chamber side portion 61. The transfer opening 66 can be opened and closed by a gate valve 185. The transfer opening 66 is connected in communication with the outer circumferential surface of the recess 62. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W can be carried into and out of the heat treatment space 65 through the transfer opening 66 and the recess 62. Furthermore, when the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the chamber 6 becomes an airtight space.

[0023] Further, through holes 61a and 61b are formed in the chamber side 61. The through hole 61a is a cylindrical hole for guiding infrared light radiated from the upper surface of the semiconductor wafer W held by the susceptor 74 to the infrared sensor 29 of the upper radiation thermometer 25, which will be described later. On the other hand, the through hole 61b is a cylindrical hole for guiding infrared light radiated from the lower surface of the semiconductor wafer W to the infrared sensor 24 of the lower radiation thermometer 20. The through holes 61a and 61b are provided at an incline with respect to the horizontal direction so that the axis of the through hole 61a intersects with the main surface of the semiconductor wafer W held by the susceptor 74. A transparent window 26 made of a calcium fluoride material that transmits infrared light in a wavelength range that can be measured by the upper radiation thermometer 25 is attached to the end of the through hole 61a facing the heat treatment space 65. Further, at the end of the through hole 61b facing the heat treatment space 65, a transparent window 21 made of a barium fluoride material that transmits infrared light in the wavelength range that the lower radiation thermometer 20 can measure is attached.

[0024] Further, a gas supply hole 81 is formed in the upper part of the inner wall of the chamber 6 to supply a processing gas to the heat treatment space 65. The gas supply hole 81 is formed at a position above the recessed portion 62, and may be provided in the reflecting ring 68. The gas supply hole 81 is connected to a gas supply pipe 83 through a buffer space 82 formed in an annular shape inside the side wall of the chamber 6. The gas supply pipe 83 is connected to a processing gas supply source 85. A valve 84 is inserted in the middle of the gas supply pipe 83. When the valve 84 is opened, the processing gas is supplied from the processing gas supply source 85 to the buffer space 82. The processing gas that has flowed into the buffer space 82 flows in a spreading manner in the buffer space 82, which has a smaller fluid resistance than the gas supply hole 81, and is supplied from the gas supply hole 81 to the heat treatment space 65. As the processing gas, for example, an inert gas such as nitrogen (N2), a reactive gas such as hydrogen (H2) or ammonia (NH3), or a mixed gas of these gases can be used (nitrogen gas in this embodiment).

[0025] On the other hand, a gas exhaust hole 86 is formed in the lower part of the inner wall of the chamber 6 to exhaust the gas in the heat treatment space 65. The gas exhaust hole 86 is formed at a position lower than the recessed portion 62, and may be provided in the reflecting ring 69. The gas exhaust hole 86 is connected to a gas exhaust pipe 88 through a buffer space 87 formed in an annular shape inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to an exhaust unit 190. A valve 89 is inserted in the middle of the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is exhausted from the gas exhaust hole 86 through the buffer space 87 to the gas exhaust pipe 88. The gas supply hole 81 and the gas exhaust hole 86 may be provided in a plurality of holes along the circumferential direction of the chamber 6, or may be slit-shaped. The process gas supply source 85 and the exhaust unit 190 may be mechanisms provided in the heat treatment apparatus 1, or may be utilities of a factory in which the heat treatment apparatus 1 is installed.

[0026] A gas exhaust pipe 191 for discharging gas from within the heat treatment space 65 is also connected to the tip of the transfer opening 66. The gas exhaust pipe 191 is connected to an exhaust unit 190 via a valve 192. By opening the valve 192, the gas from within the chamber 6 is exhausted via the transfer opening 66.

[0027] 2 is a perspective view showing the overall appearance of the holder 7. The holder 7 is configured to include a base ring 71, a connecting portion 72, and a susceptor 74. The base ring 71, the connecting portion 72, and the susceptor 74 are all made of quartz. That is, the entire holder 7 is made of quartz.

[0028] The base ring 71 is an arc-shaped quartz member with a portion missing from the annular shape. This missing portion is provided to prevent interference between the base ring 71 and a transfer arm 11 of the transfer mechanism 10, which will be described later. The base ring 71 is placed on the bottom surface of the recess 62, and is supported by the wall surface of the chamber 6 (see FIG. 1). A plurality of connecting portions 72 (four in this embodiment) are erected on the upper surface of the base ring 71 along the circumferential direction of the annular shape. The connecting portions 72 are also quartz members, and are fixed to the base ring 71 by welding.

[0029] The susceptor 74 is supported by four connecting portions 72 provided on the base ring 71. FIG. 3 is a plan view of the susceptor 74. FIG. 4 is a cross-sectional view of the susceptor 74. The susceptor 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular flat member made of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. In other words, the holding plate 75 has a larger planar size than the semiconductor wafer W.

[0030] A guide ring 76 is installed on the periphery of the upper surface of the holding plate 75. The guide ring 76 is an annular member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, when the diameter of the semiconductor wafer W is φ300 mm, the inner diameter of the guide ring 76 is φ320 mm. The inner circumference of the guide ring 76 is a tapered surface that widens from the holding plate 75 upward. The guide ring 76 is made of quartz, similar to the holding plate 75. The guide ring 76 may be fused to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 by a separately processed pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integrated member.

[0031] The area of ​​the upper surface of the holding plate 75 inside the guide ring 76 is a flat holding surface 75a that holds the semiconductor wafer W. A plurality of substrate support pins 77 are provided on the holding surface 75a of the holding plate 75. In this embodiment, a total of 12 substrate support pins 77 are provided at 30° intervals along a circumference concentric with the outer circumferential circle of the holding surface 75a (the inner circumferential circle of the guide ring 76). The diameter of the circle on which the 12 substrate support pins 77 are arranged (the distance between the opposing substrate support pins 77) is smaller than the diameter of the semiconductor wafer W, and is φ270 mm to φ280 mm (φ270 mm in this embodiment) if the diameter of the semiconductor wafer W is φ300 mm. Each substrate support pin 77 is made of quartz. The substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be processed integrally with the holding plate 75.

[0032] Returning to FIG. 2, four connecting parts 72 erected on the base ring 71 and the peripheral part of the holding plate 75 of the susceptor 74 are fixed by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting parts 72. The base ring 71 of the holding part 7 is supported on the wall surface of the chamber 6, and the holding part 7 is attached to the chamber 6. When the holding part 7 is attached to the chamber 6, the holding plate 75 of the susceptor 74 is in a horizontal position (a position in which the normal line coincides with the vertical direction). That is, the holding surface 75a of the holding plate 75 is a horizontal plane.

[0033] The semiconductor wafer W carried into the chamber 6 is placed and held in a horizontal position on the susceptor 74 of the holder 7 attached to the chamber 6. At this time, the semiconductor wafer W is supported by twelve substrate support pins 77 standing on a holding plate 75 and held on the susceptor 74. More precisely, the upper ends of the twelve substrate support pins 77 contact the lower surface of the semiconductor wafer W to support the semiconductor wafer W. The heights of the twelve substrate support pins 77 (the distance from the upper ends of the substrate support pins 77 to the holding surface 75a of the holding plate 75) are uniform, so that the twelve substrate support pins 77 can support the semiconductor wafer W in a horizontal position.

[0034] Furthermore, the semiconductor wafer W is supported by a plurality of substrate support pins 77 at a predetermined distance from the holding surface 75a of the holding plate 75. The thickness of the guide ring 76 is greater than the height of the substrate support pins 77. Therefore, the guide ring 76 prevents the semiconductor wafer W supported by the plurality of substrate support pins 77 from shifting in the horizontal direction.

[0035] 2 and 3, an opening 78 is formed in the holding plate 75 of the susceptor 74, penetrating vertically. The opening 78 is provided so that the lower radiation thermometer 20 can receive radiation light (infrared light) emitted from the lower surface of the semiconductor wafer W. That is, the lower radiation thermometer 20 receives light emitted from the lower surface of the semiconductor wafer W through the opening 78 and a transparent window 21 attached to the through hole 61b of the chamber side part 61, and measures the temperature of the semiconductor wafer W. Furthermore, the holding plate 75 of the susceptor 74 is provided with four through holes 79 through which lift pins 12 of the transfer mechanism 10, which will be described later, pass to transfer the semiconductor wafer W.

[0036] FIG. 5 is a plan view of the transfer mechanism 10. FIG. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arms 11 are formed in an arc shape that is aligned with the generally annular recess 62. Two lift pins 12 are provided upright on each of the transfer arms 11. The transfer arms 11 and the lift pins 12 are made of quartz. Each transfer arm 11 is rotatable by a horizontal movement mechanism 13. The horizontal movement mechanism 13 horizontally moves the pair of transfer arms 11 between a transfer operation position (solid line position in FIG. 5) where the semiconductor wafer W is transferred to the holder 7 and a retracted position (double-dashed line position in FIG. 5) where the pair of transfer arms 11 do not overlap the semiconductor wafer W held by the holder 7 in a plan view. The horizontal movement mechanism 13 may be a mechanism that rotates each transfer arm 11 using an individual motor, or a mechanism that uses a link mechanism to rotate a pair of transfer arms 11 in unison using a single motor.

[0037] The pair of transfer arms 11 are raised and lowered together with the horizontal movement mechanism 13 by the lifting mechanism 14. When the lifting mechanism 14 raises the pair of transfer arms 11 to the transfer operation position, the total of four lift pins 12 pass through the through holes 79 (see FIGS. 2 and 3) formed in the susceptor 74, and the upper ends of the lift pins 12 protrude from the upper surface of the susceptor 74. On the other hand, when the lifting mechanism 14 lowers the pair of transfer arms 11 to the transfer operation position to remove the lift pins 12 from the through holes 79, and the horizontal movement mechanism 13 moves the pair of transfer arms 11 to open them, each transfer arm 11 moves to a retracted position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holder 7. Since the base ring 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arms 11 is inside the recess 62. In addition, an exhaust mechanism (not shown) is provided near the location where the drive part of the transfer mechanism 10 (horizontal movement mechanism 13 and lifting mechanism 14) is located, and is configured to exhaust the atmosphere around the drive part of the transfer mechanism 10 to the outside of the chamber 6.

[0038] Returning to FIG. 1, the flash heating unit 5 provided above the chamber 6 is configured to include a light source consisting of multiple (30 in this embodiment) xenon flash lamps FL inside a housing 51, and a reflector 52 provided to cover the light source from above. A lamp light emission window 53 is attached to the bottom of the housing 51 of the flash heating unit 5. The lamp light emission window 53 forming the floor of the flash heating unit 5 is a plate-shaped quartz window made of quartz. By installing the flash heating unit 5 above the chamber 6, the lamp light emission window 53 faces the upper chamber window 63. The flash lamps FL irradiate flash light from above the chamber 6 through the lamp light emission window 53 and the upper chamber window 63 into the heat treatment space 65.

[0039] The multiple flash lamps FL are rod-shaped lamps each having a long cylindrical shape, and are arranged in a plane such that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holder 7 (i.e., along the horizontal direction). Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

[0040] The xenon flash lamp FL comprises a rod-shaped glass tube (discharge tube) filled with xenon gas and having an anode and a cathode connected to a capacitor at both ends, and a trigger electrode attached to the outer periphery of the glass tube. Since xenon gas is an electrical insulator, electricity does not flow through the glass tube under normal conditions even if an electric charge is stored in the capacitor. However, when a high voltage is applied to the trigger electrode to break down the insulation, the electricity stored in the capacitor flows instantly through the glass tube, and light is emitted by the excitation of the xenon atoms or molecules at that time. In such a xenon flash lamp FL, the electrostatic energy stored in the capacitor in advance is converted into an extremely short light pulse of 0.1 to 100 milliseconds, so that it has the characteristic of being able to irradiate extremely strong light compared to a light source that is continuously lit such as a halogen lamp HL. In other words, the flash lamp FL is a pulsed light-emitting lamp that emits light instantaneously for an extremely short time of less than one second. The light emission time of the flash lamps FL can be adjusted by the coil constant of the lamp power supply that supplies power to the flash lamps FL.

[0041] Moreover, the reflector 52 is provided above the multiple flash lamps FL so as to cover them entirely. The basic function of the reflector 52 is to reflect the flash light emitted from the multiple flash lamps FL toward the heat treatment space 65. The reflector 52 is made of an aluminum alloy plate, and its surface (the surface facing the flash lamps FL) is roughened by blasting.

[0042] The halogen heating unit 4 provided below the chamber 6 has a plurality of halogen lamps HL (40 in this embodiment) built inside the housing 41. The halogen heating unit 4 heats the semiconductor wafer W by irradiating light from the plurality of halogen lamps HL into a heat treatment space 65 from below the chamber 6 through a lower chamber window 64.

[0043] FIG. 7 is a plan view showing the arrangement of a plurality of halogen lamps HL. 40 halogen lamps HL are arranged in two tiers, upper and lower. 20 halogen lamps HL are arranged in the upper tier close to the holder 7, and 20 halogen lamps HL are also arranged in the lower tier farther from the holder 7 than the upper tier. Each halogen lamp HL is a rod-shaped lamp having a long cylindrical shape. The 20 halogen lamps HL in both the upper and lower tiers are arranged so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holder 7 (i.e., along the horizontal direction). Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper and lower tiers is a horizontal plane.

[0044] 7, the halogen lamps HL are arranged at a higher density in the region facing the periphery of the semiconductor wafer W held by the holder 7 in both the upper and lower tiers than in the region facing the center of the semiconductor wafer W. That is, in both the upper and lower tiers, the arrangement pitch of the halogen lamps HL is shorter in the periphery of the lamp arrangement than in the center. This makes it possible to irradiate a greater amount of light to the periphery of the semiconductor wafer W, which is prone to temperature drop during heating by light irradiation from the halogen heating unit 4.

[0045] The lamp group consisting of the halogen lamps HL in the upper row and the lamp group consisting of the halogen lamps HL in the lower row are arranged to intersect in a lattice pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of the 20 halogen lamps HL arranged in the upper row and the longitudinal direction of the 20 halogen lamps HL arranged in the lower row are perpendicular to each other.

[0046] The halogen lamp HL is a filament type light source that emits light by passing electricity through a filament disposed inside a glass tube, which becomes incandescent. A gas consisting of an inert gas such as nitrogen or argon with a small amount of halogen elements (iodine, bromine, etc.) is sealed inside the glass tube. By introducing halogen elements, it is possible to set the temperature of the filament at a high temperature while suppressing filament breakage. Therefore, the halogen lamp HL has the characteristics of having a longer life than a normal incandescent light bulb and being able to continuously irradiate strong light. In other words, the halogen lamp HL is a continuous lighting lamp that emits light continuously for at least one second or more. In addition, since the halogen lamp HL is a rod-shaped lamp, it has a long life, and by arranging the halogen lamp HL along the horizontal direction, the radiation efficiency to the semiconductor wafer W above is excellent.

[0047] Also, a reflector 43 is provided below the two-tiered halogen lamps HL within the housing 41 of the halogen heating unit 4 (FIG. 1). The reflector 43 reflects the light emitted from the multiple halogen lamps HL toward the heat treatment space 65.

[0048] As shown in FIG. 1, the chamber 6 is provided with two radiation thermometers (pyrometers in this embodiment), an upper radiation thermometer 25 and a lower radiation thermometer 20. The upper radiation thermometer 25 is installed diagonally above the semiconductor wafer W held on the susceptor 74, and receives infrared light radiated from the upper surface of the semiconductor wafer W to measure the temperature of the upper surface. The infrared sensor 29 of the upper radiation thermometer 25 is equipped with an InSb (indium antimony) optical element so as to be able to respond to a sudden temperature change of the upper surface of the semiconductor wafer W at the moment when the flash light is irradiated. On the other hand, the lower radiation thermometer 20 is installed diagonally below the semiconductor wafer W held on the susceptor 74, and receives infrared light radiated from the lower surface of the semiconductor wafer W to measure the temperature of the lower surface.

[0049] The control unit 3 controls the various operating mechanisms provided in the heat treatment device 1. The hardware configuration of the control unit 3 is similar to that of a general computer. That is, the control unit 3 includes a CPU, which is a circuit that performs various arithmetic processing, a ROM, which is a read-only memory that stores basic programs, a RAM, which is a readable and writable memory that stores various information, and a magnetic disk that stores control software, data, and the like. The CPU of the control unit 3 executes a predetermined processing program, and thereby the processing in the heat treatment device 1 proceeds.

[0050] In addition to the above configuration, the heat treatment apparatus 1 is provided with various cooling structures to prevent an excessive temperature rise in the halogen heating unit 4, the flash heating unit 5, and the chamber 6 due to the thermal energy generated from the halogen lamps HL and the flash lamps FL during the heat treatment of the semiconductor wafer W. For example, a water-cooling pipe (not shown) is provided in the wall of the chamber 6. The halogen heating unit 4 and the flash heating unit 5 are also of an air-cooled structure that forms a gas flow inside to remove heat. Air is also supplied to the gap between the upper chamber window 63 and the lamp light emission window 53 to cool the flash heating unit 5 and the upper chamber window 63.

[0051] Next, a description will be given of the processing operation in the heat treatment apparatus 1. First, a description will be given of the heat treatment operation on a normal semiconductor wafer (product wafer) W that will become a product. The processing procedure for the semiconductor wafer W described below progresses as the control unit 3 controls each operating mechanism of the heat treatment apparatus 1.

[0052] First, prior to processing of the semiconductor wafer W, the valve 84 for supplying air is opened, and the exhaust valve 89 is also opened to start supplying and exhausting air to and from the chamber 6. When the valve 84 is opened, nitrogen gas is supplied to the heat treatment space 65 from the gas supply hole 81. When the valve 89 is opened, the gas in the chamber 6 is exhausted from the gas exhaust hole 86. As a result, the nitrogen gas supplied from the upper part of the heat treatment space 65 in the chamber 6 flows downward and is exhausted from the lower part of the heat treatment space 65.

[0053] Furthermore, by opening the valve 192, the gas in the chamber 6 is also exhausted from the transfer opening 66. Furthermore, the atmosphere around the drive unit of the transfer mechanism 10 is also exhausted by an exhaust mechanism (not shown). Note that, during the heat treatment of the semiconductor wafer W in the heat treatment apparatus 1, nitrogen gas is continuously supplied to the heat treatment space 65, and the supply amount is appropriately changed depending on the treatment process.

[0054] Next, the gate valve 185 is opened to open the transport opening 66, and the semiconductor wafer W to be treated is carried into the heat treatment space 65 in the chamber 6 through the transport opening 66 by a transport robot outside the apparatus. At this time, there is a risk that the atmosphere outside the apparatus may be drawn in with the carrying in of the semiconductor wafer W, but since nitrogen gas is continuously supplied to the chamber 6, the nitrogen gas flows out from the transport opening 66, making it possible to minimize the entrainment of such external atmosphere.

[0055] The semiconductor wafer W carried in by the transport robot advances to a position directly above the holder 7 and stops there. Then, the pair of transfer arms 11 of the transfer mechanism 10 move horizontally from the retreated position to the transfer operation position and rise, causing the lift pins 12 to pass through the through holes 79 and protrude from the upper surface of the holding plate 75 of the susceptor 74 to receive the semiconductor wafer W. At this time, the lift pins 12 rise to a position above the upper ends of the substrate support pins 77.

[0056] After the semiconductor wafer W is placed on the lift pins 12, the transport robot leaves the heat treatment space 65, and the transport opening 66 is closed by the gate valve 185. Then, the pair of transfer arms 11 descend, and the semiconductor wafer W is transferred from the transfer mechanism 10 to the susceptor 74 of the holder 7 and held from below in a horizontal position. The semiconductor wafer W is supported by a plurality of substrate support pins 77 erected on the holding plate 75 and held by the susceptor 74. The semiconductor wafer W is held by the holder 7 with the front surface, which is the surface to be processed, as the upper surface. A predetermined gap is formed between the back surface (the main surface opposite to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75. The pair of transfer arms 11 that descend to below the susceptor 74 are retreated to a retreat position, that is, inside the recess 62, by the horizontal movement mechanism 13.

[0057] After the semiconductor wafer W is held from below in a horizontal position by the susceptor 74 of the holder 7 made of quartz, the 40 halogen lamps HL of the halogen heating unit 4 are turned on all at once to start preheating (assisted heating). Halogen light emitted from the halogen lamps HL passes through the lower chamber window 64 and the susceptor 74, both made of quartz, and is irradiated onto the underside of the semiconductor wafer W. The semiconductor wafer W is preheated by being irradiated with light from the halogen lamps HL, and its temperature rises. Note that the transfer arm 11 of the transfer mechanism 10 is retracted inside the recess 62, and does not interfere with heating by the halogen lamps HL.

[0058] The temperature of the semiconductor wafer W, which is heated by the light irradiation from the halogen lamps HL, is measured by the lower radiation thermometer 20. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The control unit 3 controls the output of the halogen lamps HL while monitoring whether the temperature of the semiconductor wafer W, which is heated by the light irradiation from the halogen lamps HL, has reached a predetermined preheating temperature T1. That is, the control unit 3 feedback-controls the output of the halogen lamps HL based on the measurement value by the lower radiation thermometer 20 so that the temperature of the semiconductor wafer W becomes the preheating temperature T1.

[0059] After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preheating temperature T1. Specifically, when the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamps HL to maintain the temperature of the semiconductor wafer W at approximately the preheating temperature T1.

[0060] By performing such preheating with the halogen lamps HL, the temperature of the entire semiconductor wafer W is uniformly raised to the preheating temperature T1. During the preheating stage with the halogen lamps HL, the temperature of the peripheral portion of the semiconductor wafer W, where heat dissipation is more likely to occur, tends to be lower than that of the central portion, but the arrangement density of the halogen lamps HL in the halogen heating unit 4 is higher in the region facing the peripheral portion than in the region facing the central portion of the semiconductor wafer W. As a result, a greater amount of light is irradiated to the peripheral portion of the semiconductor wafer W, where heat dissipation is more likely to occur, and the in-plane temperature distribution of the semiconductor wafer W during the preheating stage can be made uniform.

[0061] When a predetermined time has elapsed since the temperature of the semiconductor wafer W reached the preheating temperature T1, the flash lamps FL of the flash heating unit 5 irradiate the surface of the semiconductor wafer W held on the susceptor 74 with flash light. At this time, part of the flash light emitted from the flash lamps FL heads directly into the chamber 6, and the other part heads into the chamber 6 after being reflected by the reflector 52, and the semiconductor wafer W is flash-heated by the irradiation of these flash lights.

[0062] Flash heating is performed by irradiating a flash of light (flash of light) from the flash lamps FL, and can raise the surface temperature of the semiconductor wafer W in a short time. That is, the flash of light irradiated from the flash lamps FL is an extremely short and strong flash of light with an irradiation time of about 0.1 to 100 milliseconds, in which electrostatic energy previously stored in a capacitor is converted into an extremely short light pulse. The surface temperature of the semiconductor wafer W flash-heated by the irradiation of the flash light from the flash lamps FL instantaneously rises to a processing temperature T2 of 1000°C or higher and then rapidly drops.

[0063] After the flash heating process is completed, the halogen lamps HL are turned off after a predetermined time has elapsed. This causes the temperature of the semiconductor wafer W to rapidly drop from the preheating temperature T1. The temperature of the semiconductor wafer W during the temperature drop is measured by the lower radiation thermometer 20, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors whether the temperature of the semiconductor wafer W has dropped to a predetermined temperature based on the measurement result of the lower radiation thermometer 20. Then, after the temperature of the semiconductor wafer W has dropped to a predetermined temperature or lower, the pair of transfer arms 11 of the transfer mechanism 10 again move horizontally from the retreat position to the transfer operation position and rise, so that the lift pins 12 protrude from the upper surface of the susceptor 74 and receive the semiconductor wafer W after the heat treatment from the susceptor 74. Next, the transfer opening 66 that was closed by the gate valve 185 is opened, and the semiconductor wafer W placed on the lift pins 12 is carried out of the chamber 6 by a transfer robot outside the apparatus, completing the heat treatment of the semiconductor wafer W.

[0064] The surface temperature of the semiconductor wafer W, which rises and falls rapidly during flash light irradiation, is measured by the upper radiation thermometer 25. However, during flash light irradiation, only the vicinity of the surface of the semiconductor wafer W rises in temperature rapidly and undergoes thermal expansion, causing the semiconductor wafer W to vibrate on the susceptor 74. As a result, the intensity of the light radiated from the surface of the semiconductor wafer W and received by the upper radiation thermometer 25 varies, making it difficult to measure the surface temperature. Therefore, in the first embodiment, the surface temperature of the semiconductor wafer W during flash light irradiation is measured as follows.

[0065] 8 is a flowchart showing the procedure for measuring the surface temperature of a semiconductor wafer W in the first embodiment. First, the upper radiation thermometer 25 receives radiant light (infrared light) emitted from the surface of the semiconductor wafer W during flash light irradiation (step S11). The upper radiation thermometer 25 receives radiant light from the surface of the semiconductor wafer W during a measurement period that includes at least a predetermined period after the flash lamps FL start to emit light. For example, the upper radiation thermometer 25 receives radiant light from the surface of the semiconductor wafer W during the measurement period, which is set to be the period immediately before the flash lamps FL start to emit light until a predetermined time has passed after the flash lamps FL start to emit light.

[0066] The infrared sensor 29 of the upper radiation thermometer 25 outputs a signal according to the intensity of the received radiation. FIG. 9 is a diagram showing an example of the received light intensity signal data output from the upper radiation thermometer 25. During flash light irradiation, the surface temperature of the semiconductor wafer W increases monotonically, reaches a peak temperature, and then decreases monotonically. Therefore, the received light intensity signal data output from the upper radiation thermometer 25 should also increase monotonically and then decrease monotonically in response to the flash light. However, as shown in FIG. 9, the received light intensity signal output from the upper radiation thermometer 25 actually shows a decreasing tendency overall while repeating relatively small increases and decreases. Such small fluctuations in the received light intensity signal are caused by the vibration of the semiconductor wafer W. In other words, the received light intensity signal data output from the upper radiation thermometer 25 includes a signal indicating a change in the surface temperature of the semiconductor wafer W and a signal caused by the vibration of the semiconductor wafer W that are overlapped.

[0067] In the first embodiment, the light receiving intensity signal data output from the upper radiation thermometer 25 is converted into the frequency domain (step S12). The calculation process after step S12 is executed by, for example, the control unit 3. The frequency domain indicates what frequency components a signal has. The control unit 3 converts the light receiving intensity signal data output from the upper radiation thermometer 25 into the frequency domain using, for example, a Fourier transform.

[0068] FIG. 10 is a diagram showing the result of converting the light receiving intensity signal data of FIG. 9 into the frequency domain. In FIG. 10, the horizontal axis indicates frequency, and the vertical axis indicates amplitude. As shown in FIG. 10, when the light receiving intensity signal data output from the upper radiation thermometer 25 is converted into the frequency domain, peaks appear in both the relatively low frequency range and the relatively high frequency range. The change in the surface temperature of the semiconductor wafer W when irradiated with flash light simply increases and then decreases monotonically, and the frequency is relatively low. Therefore, the low frequency component of the two peaks is derived from the change in the surface temperature of the semiconductor wafer W when irradiated with flash light. On the other hand, the frequency of the vibration of the semiconductor wafer W is relatively high compared to the frequency of the change in the surface temperature. Therefore, the high frequency component of the two peaks is derived from the vibration of the semiconductor wafer W.

[0069] Next, in the frequency domain of Fig. 10, high frequency components equal to or greater than a preset value are cut (step S13). Specifically, in the frequency domain data shown in Fig. 10, the control unit 3 sets frequency components equal to or greater than a preset value SF to zero, while leaving frequency components below the preset value SF as they are. This makes it possible to remove high frequency components originating from vibrations of the semiconductor wafer W.

[0070] Next, the frequency domain of FIG. 10 from which the high frequency components have been removed is inversely transformed back to the original time domain (step S14). The time domain represents how a signal changes over time. The light receiving intensity signal data output from the upper radiation thermometer 25 shown in FIG. 9 is also time domain data. The control unit 3 inversely transforms the frequency domain back to the time domain using, for example, an inverse Fourier transform.

[0071] Fig. 11 is a diagram showing the result of inversely transforming the frequency domain of Fig. 10, from which high frequency components have been removed, into the time domain. As is clear from comparing Fig. 11 with Fig. 9, small fluctuations in the signal indicating vibration of the semiconductor wafer W have been removed from the signal data shown in Fig. 11. In other words, the intensity signal data shown in Fig. 11 is a signal that indicates almost purely the change in the surface temperature of the semiconductor wafer W when irradiated with flash light.

[0072] Next, the intensity signal data shown in Fig. 11 is converted into temperature data (step S15). The control unit 3 performs a predetermined arithmetic process on the intensity signal data shown in Fig. 11 to obtain temperature data. The obtained temperature data indicates how the surface temperature of the semiconductor wafer W changes over time, and shows approximately the same change as the intensity signal data of Fig. 11. In this manner, the surface temperature of the semiconductor wafer W that changes due to flash light irradiation is measured.

[0073] In the first embodiment, the radiation emitted from the surface of the semiconductor wafer W during flash light irradiation is received by the upper radiation thermometer 25, and the received light intensity signal data output from the upper radiation thermometer 25 is converted into the frequency domain. Then, in the frequency domain, frequency components equal to or higher than a set value SF are set to zero to remove high-frequency components derived from vibration of the semiconductor wafer W. The frequency domain data from which the high-frequency components have been removed is inversely converted back to the original time domain, thereby obtaining signal data that indicates only the change in the surface temperature of the semiconductor wafer W, with the effects of vibration of the semiconductor wafer W eliminated. Temperature data is calculated based on this signal data, so that the surface temperature of the semiconductor wafer W during flash light irradiation can be accurately measured.

[0074] In the first embodiment, the set value SF, which is a threshold value for removing high-frequency components derived from vibrations of the semiconductor wafer W, may be set in advance based on multiple experiments conducted in advance. Specifically, a plurality of semiconductor wafers W are subjected to heat treatment using the same recipe, and the set value SF is adjusted so that the temperature data of the surface temperature of the semiconductor wafer W obtained by cutting out high-frequency components equal to or higher than the set value SF as described above approaches the temperature change of the actual surface temperature, and the set value SF is set in the control unit 3.

[0075] <Second embodiment> Next, a second embodiment of the present invention will be described. The configuration of the heat treatment apparatus 1 of the second embodiment is the same as that of the first embodiment. The processing procedure of the semiconductor wafer W in the second embodiment is also the same as that of the first embodiment. In the first embodiment, high frequency components derived from vibration of the semiconductor wafer W are removed from the received light intensity signal data output from the upper pyrometer 25, whereas in the second embodiment, the phase of the received light intensity signal data is shifted.

[0076] 12 is a flow chart showing the procedure for measuring the surface temperature of a semiconductor wafer W in the second embodiment. First, as in the first embodiment, the upper radiation thermometer 25 receives the radiant light (infrared light) emitted from the surface of the semiconductor wafer W during flash light irradiation (step S21). The upper radiation thermometer 25 receives the radiant light from the surface of the semiconductor wafer W during a measurement period that includes at least a predetermined period after the flash lamps FL start to emit light.

[0077] The infrared sensor 29 of the upper radiation thermometer 25 outputs a signal according to the intensity of the received radiation. The received light intensity signal data output from the upper radiation thermometer 25 is similar to that shown in Fig. 9. That is, the received light intensity signal data output from the upper radiation thermometer 25 includes a signal indicating a change in the surface temperature of the semiconductor wafer W and a signal caused by vibration of the semiconductor wafer W superimposed thereon.

[0078] In the second embodiment, the phase of the received light intensity signal data output from the upper pyrometer 25 is shifted after the start of emission of the flash lamps FL (step S22). The calculation process after step S22 is executed by the control unit 3, for example.

[0079] 13 is a diagram showing a phase shift in the received light intensity signal data. The control unit 3 shifts the data after time tf, which is the start of light emission of the flash lamp FL, in the direction going back in time by a preset shift time SS in the received light intensity signal data output from the upper radiation thermometer 25. The control unit 3 leaves the data before time tf as it is without shifting it.

[0080] Fig. 14 is a diagram showing received light intensity signal data after a phase shift. In the received light intensity signal data output from the upper pyrometer 25, the data after time tf, when the flash lamps FL start to emit light, is shifted by the shift time SS to obtain the intensity signal data shown in Fig. 14. Although small fluctuations in the signal due to vibrations of the semiconductor wafer W remain in the intensity signal data after the phase shift shown in Fig. 14, the maximum attained intensity of the signal data can be obtained accurately.

[0081] Next, the intensity signal data shown in Fig. 14 is converted into temperature data (step S23). The control unit 3 performs a predetermined arithmetic process on the intensity signal data shown in Fig. 14 to obtain temperature data. The obtained temperature data shows almost the same changes as the intensity signal data in Fig. 14. Although the obtained temperature data includes the influence of vibration of the semiconductor wafer W, the maximum temperature reached (peak temperature) on the surface of the semiconductor wafer W can be obtained from the temperature data.

[0082] In the second embodiment, the light emitted from the surface of the semiconductor wafer W during flash light irradiation is received by the upper radiation thermometer 25, and the phase of the received light intensity signal data output from the upper radiation thermometer 25 is shifted by a shift time SS from the start of light emission of the flash lamps FL. Although the signal data after the phase shift is still affected by the vibration of the semiconductor wafer W, a signal indicating the maximum temperature reached on the surface of the semiconductor wafer W is obtained. By calculating temperature data based on the signal data after the phase shift, the maximum temperature reached on the surface of the semiconductor wafer W during flash light irradiation can be accurately measured.

[0083] The shift time SS in the second embodiment may be set in advance based on multiple experiments carried out in advance. Specifically, a plurality of semiconductor wafers W are subjected to heat treatment using the same recipe, and the shift time SS is adjusted so that the maximum temperature of the semiconductor wafer W obtained by shifting the phase by the shift time SS as described above approaches the actual maximum temperature, and the shift time SS is set in the control unit 3.

[0084] <Modification> Although the embodiment of the present invention has been described above, various modifications can be made to the present invention without departing from the spirit of the present invention. For example, in the first embodiment, high-frequency components derived from the vibration of the semiconductor wafer W are removed from the light-receiving intensity signal data output from the upper pyrometer 25, and in the second embodiment, the phase of the light-receiving intensity signal data is shifted, but both of these may be performed. In this case, the high-frequency components may be removed before the phase is shifted, or the high-frequency components may be removed after the phase is shifted. By performing both the removal of the high-frequency components and the phase shift, the surface temperature of the semiconductor wafer W during flash light irradiation can be measured more accurately.

[0085] In addition, in the first embodiment, the light receiving intensity signal data output from the upper radiation thermometer 25 is converted into the frequency domain using a Fourier transform. However, this is not limited to this, and the light receiving intensity signal data may be converted into the frequency domain using, for example, a wavelet transform or the like.

[0086] In addition, the calculation process from step S12 onwards in the first embodiment and the calculation process from step S22 onwards in the second embodiment are not limited to being executed by the control unit 3, and may be executed, for example, by a dedicated controller attached to the upper radiation thermometer 25.

[0087] In the above embodiment, the flash heating unit 5 is provided with 30 flash lamps FL, but this is not limited to this and the number of flash lamps FL can be any number. The flash lamps FL are not limited to xenon flash lamps and may be krypton flash lamps. The number of halogen lamps HL provided in the halogen heating unit 4 is not limited to 40 and can be any number.

[0088] In the above embodiment, a filament-type halogen lamp HL is used as a continuously lit lamp that emits light continuously for one second or more to perform a heat treatment to maintain the substrate at a predetermined temperature. However, this is not limited to this, and the heat treatment may be performed using a discharge-type arc lamp (e.g., a xenon arc lamp) or an LED lamp as a continuously lit lamp instead of the halogen lamp HL. [Explanation of symbols]

[0089] 1 Heat treatment equipment 3. Control Unit 4 Halogen heating section 5 Flash heating section 6 Chambers 7 Holding part 10 Transfer mechanism 20 Lower radiation thermometer 25 Upper radiation thermometer 63 Upper chamber window 64 Lower chamber window 65 Heat Treatment Space 74 Susceptor FL Flash lamp HL Halogen Lamp W Semiconductor wafer

Claims

1. A temperature measuring method for measuring a temperature of a substrate that changes due to irradiation with a flash light, comprising the steps of: an irradiation step of irradiating a surface of the substrate with a flash light from a flash lamp; a light receiving step of receiving, by a radiation thermometer, radiation light emitted from the surface of the substrate during a measurement period including a predetermined period after the flash lamp starts to emit light; A conversion step of converting a signal output from the radiation thermometer into a frequency domain; a removal step of reducing frequency components having a predetermined value or more in the frequency domain to zero; an inverse transform step of inversely transforming the frequency domain into a time domain after the removal step; A temperature measuring method comprising:

2. A temperature measuring method for measuring a temperature of a substrate that changes due to irradiation with a flash light, comprising the steps of: an irradiation step of irradiating a surface of the substrate with a flash light from a flash lamp; a light receiving step of receiving, by a radiation thermometer, radiation light emitted from the surface of the substrate during a measurement period including a predetermined period after the flash lamp starts to emit light; a phase adjustment step of shifting data from the start of emission of the flash lamp by a set shift time with respect to received light intensity signal data output from the radiation thermometer; A temperature measuring method comprising:

3. 3. The temperature measuring method according to claim 2, A conversion step of converting the received light intensity signal data output from the radiation thermometer into a frequency domain; a removal step of reducing frequency components having a predetermined value or more in the frequency domain to zero; an inverse transform step of inversely transforming the frequency domain into a time domain after the removal step; The temperature measuring method further comprising:

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