High temperature vacuum sealing

Abstract

A gas distribution assembly and a processing chamber including the gas distribution assembly are described. The gas distribution assembly includes a gas distribution plate, a lid, and a primary O-ring. The primary O-ring is positioned between purge channels on a first contact surface of the gas distribution plate and a second contact surface. A method of sealing a processing chamber using the disclosed gas distribution assembly is also described.

Description

[Technical field]

[0001]

[0001] Embodiments of the present disclosure relate generally to an apparatus and method for vacuum sealing a processing chamber. More specifically, embodiments of the present disclosure are directed to an apparatus and method that reduces oxygen transmission to enable high temperature vacuum sealing. [Background technology]

[0002]

[0002] During semiconductor manufacturing, processing chambers often require high temperature vacuum seals, ultra-high purity environments, and low molecular oxygen content during processing. Processing chamber components are connected with O-rings to prevent metal-to-metal contact and form a seal. The seal formed is mostly fluidly tight, but may allow some atmospheric gases to pass through. Gas permeation is temperature sensitive, with higher temperatures increasing the permeability. Because processing chambers often operate at elevated temperatures, the gas permeability of the O-rings is significantly increased.

[0003] In conventional processing chambers, double seals with full differential pumping are often used with high temperature vacuum assemblies. The application of double seals is limited where space constraints exist. Furthermore, incorporating double seals also typically has longer lead times and increased costs for custom O-rings. Thus, there is a need in the art for an apparatus and method for sealing a processing chamber environment from the migration of ambient gas species. Summary of the Invention

[0004]

[0004] One or more embodiments of the present disclosure are directed to a gas distribution assembly including a gas distribution plate, a lid, and a primary O-ring. The gas distribution plate has a front surface and a back surface defining a thickness. The gas distribution plate includes a plurality of apertures extending through a thickness of the gas distribution plate. The gas distribution plate has a sealing region at an outer periphery. The sealing region has a first contact surface and a second contact surface, the first contact surface including a purge channel formed therein. The lid has a front surface and a back surface defining a thickness. The front surface of the lid is positioned adjacent the back surface of the gas distribution plate. The lid includes a purge gas line inlet having an opening at the front surface and a purge gas line outlet having an opening at the front surface. The inlet opening and the outlet opening are aligned with the purge channel of the first contact surface. The primary O-ring is positioned between the purge channel of the first contact surface and the second contact surface.

[0005]

[0005] A further embodiment of the present disclosure is directed to a processing chamber comprising a chamber body having a sidewall and a bottom defining a processing space. A substrate support is within the processing space and has a support surface. A gas distribution assembly comprising a gas distribution plate, a lid, and a primary O-ring defines the processing space. The gas distribution plate has a front surface facing the support surface of the substrate support, and a back surface, the front surface and the back surface defining a thickness. The gas distribution plate includes a plurality of apertures extending through a thickness of the gas distribution plate. The gas distribution plate has a sealing region at an outer periphery, the sealing region having a first contact surface and a second contact surface. The first contact surface includes a purge channel formed therein. The lid has a front surface and a back surface defining a thickness. The front surface of the lid is positioned adjacent the back surface of the gas distribution plate. The lid includes a purge gas line inlet having an opening at the front surface, and a purge gas line exhaust having an opening at the front surface. The inlet opening and the outlet opening are aligned with the purge channel of the first interface surface, and a primary O-ring is positioned between the purge channel of the first interface surface and the second interface surface.

[0006]

[0006] A further embodiment of the present disclosure is directed to a method of sealing a processing chamber. The pressure of a purge gas line is measured downstream of a purge gas line outlet aligned with a purge channel in a gas distribution assembly including a gas distribution plate and a lid separated by a primary O-ring. A purge gas line is in fluid communication with the purge channel and the purge gas line inlet. Each of the purge gas line inlet and the purge gas line outlet are aligned with the purge channel. A flow of inert gas is provided to the purge channel such that there is substantially no pressure difference between the gas distribution plate and the purge channel.

[0007]

[0007] In order that the above-mentioned features of the present disclosure may be understood in detail, a more detailed description of the present disclosure, briefly summarized above, will be obtained by referring to the embodiments. Some embodiments are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure, and therefore should not be considered as limiting the scope of the present disclosure, which may admit of other equally effective embodiments. [Brief description of the drawings]

[0008] [Figure 1]

[0008] FIG. 1 is a cross-sectional isometric view of a processing chamber in accordance with one or more embodiments of the present disclosure. [Diagram 2]

[0009] FIG. 2 illustrates a cross-sectional view of a processing chamber in accordance with one or more embodiments of the present disclosure. [Diagram 3]

[0010] FIG. 2 is an exploded cross-sectional view of a processing station in accordance with one or more embodiments of the present disclosure. [Figure 4]

[0011] FIG. 1 is a schematic diagram of a processing platform in accordance with one or more embodiments of the present disclosure. [Diagram 5]

[0012] 1 is a cross-sectional schematic view of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 6]

[0013] FIG. 6 is a partial cross-sectional schematic view of an area similar to area VI of FIG. 5. [Figure 7]

[0014] 7 is a partial cross-sectional exploded schematic view of a gas distribution assembly in an area similar to that of FIG. 6. FIG. [Figure 8]

[0015] FIG. 6 is a partial cross-sectional schematic view of an area similar to area VIII of FIG. 5. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009]

[0016] Before describing certain example embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of construction or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0010]

[0017] The term "substrate" as used herein and in the appended claims refers to a surface or a portion of a surface upon which a process acts. Those skilled in the art will also understand that a reference to a substrate may also refer to only a portion of the substrate, unless the context clearly indicates otherwise. Additionally, a reference to depositing on a substrate may refer to both a bare substrate and a substrate having one or more films or features deposited or formed thereon.

[0011]

[0018] As used herein, "substrate" refers to any substrate or any material surface formed on a substrate on which a film treatment is performed during a manufacturing process. For example, substrate surfaces on which treatment may be performed include materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. Substrates may be exposed to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, e-beam cure, and / or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, in the present disclosure, any of the disclosed film processing steps may be performed on an underlayer formed on the substrate, as disclosed in more detail below, and the term "substrate surface" is intended to include such underlayers, as the context indicates. Thus, for example, when a film / layer or partial film / layer is being deposited on a substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0012]

[0019] As used in this specification and the appended claims, the terms "precursor," "reactant," "reactive gas," and the like are used interchangeably and refer to any gas species that can react with the substrate surface or with a film formed on the substrate surface.

[0013]

[0020] One or more embodiments of the present disclosure advantageously provide techniques that enable high temperature vacuum sealing. Some embodiments provide apparatus and methods for efficiently removing gaseous species that outgas from O-rings and minimizing or eliminating the adverse effects of atmospheric molecular oxygen (O2) in the processing environment.

[0014]

[0021] Some embodiments of the present disclosure are directed to a gas distribution assembly having a pump-purge channel with a single seal (O-ring). In some embodiments, the channel is continuously purged with an inert gas (e.g., Ar, N2) to maintain equal pressure in the chamber and in the channel. In other words, the pressure difference (ΔP) between the channel and the processing chamber is minimized. In some embodiments, the pressure difference is substantially zero (ΔP=0). The zero pressure difference prevents the inert gas or purge gas (e.g., Ar, N2) from flowing into the reaction space of the chamber.

[0015]

[0022] In some embodiments, a pressure transducer is used to control the pressure in the purge channel relative to the pressure in the process chamber. In some embodiments, the gas distribution assembly includes two or more purge gas channels or the process chamber includes two or more gas distribution assemblies with purge gas channels. In some embodiments, each purge channel pressure is individually controlled with respect to the ambient gas pressure. In some embodiments, purge gas (e.g., Ar, N2) diffusion into the gas channels in the chamber or showerhead is substantially zero because the purge channels are continuously purged and evacuated. In some embodiments, a pulse purge mechanism is used to remove or eliminate contamination due to O-ring defects or trapped gas.

[0016]

[0023] Some embodiments of the present disclosure use less space to incorporate a purge channel mechanism than a conventional double-seal processing chamber. In some embodiments, the processing chamber is isolated from the atmosphere without a double-seal configuration, as will be understood by those skilled in the art. In some embodiments, high temperature induced O-ring outgassing is purged from the system without entering the process cavity. In some embodiments, the O-ring material is not directly exposed to process chemicals. Some embodiments prevent O-ring defect migration and / or chemical by-products from entering the chamber. Some embodiments provide a gas distribution assembly with improved manufacturing lead time over conventional double-seal systems. In some embodiments, oxygen (O2) content in the chamber is reduced.

[0017]

[0024] The present disclosure provides a gas distribution assembly for use with single wafer or multi-wafer (also referred to as batch) processing chambers. Figures 1 and 2 show a processing chamber 100 in accordance with one or more embodiments of the present disclosure. Figure 1 shows the processing chamber 100 shown as a cross-sectional isometric view in accordance with one or more embodiments of the present disclosure. Figure 2 shows the processing chamber 100 in cross-section in accordance with one or more embodiments of the present disclosure. Accordingly, some embodiments of the present disclosure are directed to a processing chamber 100 including a substrate support 200 and a top plate 300.

[0018]

[0025] The processing chamber 100 includes a housing 102 having walls 104 and a bottom 106. The housing 102, together with a top plate 300, defines a processing space 109, also referred to as an interior space.

[0019]

[0026] The illustrated processing chamber 100 includes multiple processing stations 110. The processing stations 110 are located in the interior space 109 of the housing 102 and are positioned in a circular arrangement around the axis of rotation 211 of the substrate support 200. Each processing station 110 includes a gas distribution plate 112 (also referred to as a gas injector) having a front surface 114. In some embodiments, the front surfaces 114 of each of the gas injectors 112 are substantially coplanar. The processing stations 110 are defined as an area in which processing can occur. For example, in some embodiments, the processing stations 110 are defined as an area bounded by a support surface 231 of a heater 230 and the front surface 114 of the gas injector 112, as described below. In the illustrated embodiment, the heater 230 acts as a substrate support surface and forms part of the substrate support 200.

[0020]

[0027] The processing station 110 may be configured to perform any suitable process and provide any suitable process conditions. The type of gas distribution plate 112 used will depend, for example, on the type of process being performed and the type of showerhead or gas injector. For example, a processing station 110 configured to operate as an atomic layer deposition apparatus may have a showerhead or vortex type gas injector. In contrast, a processing station 110 configured to operate as a plasma station may have one or more electrodes and / or a ground plate configuration that generates a plasma while allowing plasma gas to flow toward the wafer. The embodiment shown in FIG. 2 has a different type of processing station 110 (processing station 110a) on the left side of the figure than on the right side of the figure (processing station 110b). Suitable processing stations 110 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCP, ICP, parallel plate CCP, UV exposure, laser processing, pump chamber, annealing station, and metrology station.

[0021]

[0028] FIG. 3 illustrates an exploded view of a gas distribution assembly 105 for use in a processing station 110 or processing chamber according to one or more embodiments of the present disclosure. Those skilled in the art will appreciate that the embodiment illustrated in FIG. 3 is a general schematic view and omits details (e.g., gas channels). The illustrated gas distribution assembly 105 includes three main components: a gas distribution plate 112, a lid 180, and an optional spacer 330. The spacer 330 is also referred to as a pump / purge spacer, an insert, or a pump / purge insert. In some embodiments, the spacer 330 is connected or in fluid communication with a vacuum (exhaust). In some embodiments, the spacer 330 is connected or in fluid communication with a purge gas source.

[0022]

[0029] The size of the openings 310 in the top plate 300 may be uniform or different. Different size / shape gas injectors 112 may be used with pump / purge spacers 330 appropriately shaped for transfer from the openings 310 to the gas distribution plate 112. For example, as shown, pump / purge spacer 330 includes a top 331 and a bottom 333 with sidewalls 335. When inserted into opening 310 in top plate 300, ledge 334 is configured to be positioned in opening 310.

[0023]

[0030] The pump / purge spacer 330 includes an opening 339 through which the gas distribution plate 112 can be inserted. The gas distribution plate 112 shown has a flange 342 that can contact a ledge formed by the back surface 332 adjacent the top 331 of the pump / purge spacer 330. The diameter or width of the gas distribution plate 112 can be any suitable size that can fit within the opening 339 of the pump / purge spacer 330. This allows various types of gas injectors 112 to be used within the same opening 310 in the top plate 300.

[0024]

[0031] 4 illustrates a processing platform 400 according to one or more embodiments of the present disclosure. The embodiment illustrated in FIG. 4 merely represents one possible configuration and should not be construed as limiting the scope of the present disclosure. For example, in some embodiments, the processing platform 400 has one or more of a different number of processing chambers 100, buffer stations 420, and / or robot 430 configurations than the embodiment illustrated.

[0025]

[0032] The exemplary processing platform 400 includes a central transfer station 410 having multiple sides 411, 412, 413, 414. The transfer station 410 shown has a first side 411, a second side 412, a third side 413, and a fourth side 414. Although four sides are shown here, one of ordinary skill in the art will appreciate that the transfer station 410 may have any suitable number of sides depending, for example, on the overall configuration of the processing platform 400. In some embodiments, the transfer station 410 has three sides, four sides, five sides, six sides, seven sides, or eight sides.

[0026]

[0033] The transfer station 410 has a robot 430 positioned therein. The robot 430 can be any suitable robot capable of moving a wafer during processing. In some embodiments, the robot 430 has a first arm 431 and a second arm 432. The first arm 431 and the second arm 432 can move independently of the other arm. The first arm 431 and the second arm 432 can move in the xy plane and / or along the z axis. In some embodiments, the robot 430 includes a third arm (not shown) or a fourth arm (not shown). Each of the arms can move independently of the other arm.

[0027]

[0034] The embodiment shown includes six processing chambers 100, two connected to each of the second 412, third 413 and fourth 414 sides of the central transfer station 410. Each of the processing chambers 100 can be configured to perform a different process.

[0028]

[0035] The processing platform 400 may also include one or more buffer stations 420 connected to a first side 411 of the central transfer station 410. The buffer stations 420 may perform the same or different functions. For example, a buffer station may hold a cassette of wafers that are processed and returned to the original cassette. Or, one of the buffer stations may hold unprocessed wafers that are moved to the other buffer station after being processed. In some embodiments, one or more of the buffer stations are configured to pre-process, pre-heat, or clean wafers before and / or after processing.

[0029]

[0036] The processing platform 400 may also include one or more slit valves 418 between the central transfer station 410 and any of the processing chambers 100. The slit valves 418 may be opened or closed to isolate the interior space within the processing chambers 100 from the environment within the central transfer station 410. For example, if a processing chamber generates plasma during processing, it may be useful to close the slit valve of that processing chamber to prevent stray plasma from damaging a robot in the transfer station.

[0030]

[0037] The processing platform 400 may be connected to a factory interface 450 to allow for loading of wafers or cassettes of wafers onto the processing platform 400. A robot 455 in the factory interface 450 may be used to move wafers or cassettes to and from the buffer station. A robot 430 in the central transfer station 410 may move wafers or cassettes within the processing platform 400. In some embodiments, the factory interface 450 is a transfer station of another cluster tool (i.e., another multiple chamber processing platform).

[0031]

[0038] A controller 495 may be provided and coupled to the various components of the processing platform 400 to control their operation. The controller 495 may be a single controller that controls the entire processing platform 400, or multiple controllers that control individual portions of the processing platform 400. For example, the processing platform 400 of some embodiments includes separate controllers for one or more of the individual processing chambers 100, the central transfer station 410, the factory interface 450, and / or the robot 430.

[0032]

[0039] In some embodiments, the processing chamber 100 further comprises a controller 495 coupled to the plurality of substantially coplanar support surfaces 231 configured to control one or both of the first temperature or the second temperature. In one or more embodiments, the controller 495 controls the rate of movement of the substrate support 200 (FIG. 2).

[0033]

[0040] In some embodiments, the controller 495 includes a central processing unit (CPU) 496, memory 497, and support circuits 498. The controller 495 may control the processing platform 400 directly or through computers (or controllers) associated with particular processing chambers and / or support system components.

[0034]

[0041] The controller 495 may be one of any form of general-purpose computer processor that may be used in an industrial environment to control various chambers and sub-processors. The memory 497 or computer readable medium of the controller 495 may be one or more of readily available memories such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, optical storage media (e.g., compact disk or digital video disk), flash drive, or any other form of digital storage, local or remote. The memory 497 may hold a set of instructions operable by the processor (CPU 496) to control parameters and components of the processing platform 400.

[0035]

[0042] The support circuits 498 are coupled to the CPU 496 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. One or more processes may be stored in the memory 498 as software routines that, when executed or invoked by the processor, cause the processor to control the operation of the processing platform 400 or individual processing chambers in the manner described herein. The software routines may also be stored and / or executed by a second CPU (not shown) located remotely from the hardware controlled by the CPU 496.

[0036]

[0043] Some or all of the processes and methods of the present disclosure may also be performed in hardware. Thus, the processes may be implemented in software and executed using a computer system in hardware (e.g., an application specific integrated circuit or other type of hardware implementation) or a combination of software and hardware. The software routines, when executed by a processor, transform a general-purpose computer into a special-purpose computer (controller) that controls the operation of the chamber so that processing is performed.

[0037]

[0044] In some embodiments, the controller 495 has one or more configurations for performing individual or sub-processes to carry out the methods. The controller 495 may be connected to and configured to operate intermediate components to carry out the functions of the methods. For example, the controller 495 may be connected to and configured to control one or more of gas valves, actuators, motors, slit valves, vacuum controls, or other components.

[0038]

[0045] In one or more embodiments, the process chamber 100 further includes at least one wafer on a support surface. In some embodiments, the first emissivity and first temperature and / or the second emissivity and second temperature provide steady state temperatures for the wafer in the first station and the second station.

[0039]

[0046] Figures 5-8 illustrate one or more embodiments of the gas distribution assembly 105. Figure 5 illustrates a cross-sectional schematic of a processing chamber 100 having the gas distribution assembly 105. Figure 6 illustrates a cross-sectional schematic of the gas distribution assembly 105 similar to that of region VI of Figure 5. Figure 7 illustrates an exploded view of the gas distribution assembly 105 of Figure 6. Figure 8 illustrates a cross-sectional schematic of the gas distribution assembly 105 similar to that of region VIII of Figure 5.

[0040]

[0047] In some embodiments, the gas distribution assembly 105 comprises a gas distribution plate 112 having a lid 180. The gas distribution plate 105 has a front surface 114 and a back surface 115 that define a thickness of the gas distribution plate 112. In the embodiment shown, the peripheral region of the gas distribution plate 112 has surface features and contact surfaces described below and is not considered part of the back surface 115. The back surface 115 is a surface of the gas distribution plate 112 and another component may contact and provide a flow path for gas to pass through the thickness of the gas distribution plate 112 through a plurality of apertures 133 that extend through the thickness.

[0041]

[0048] In the embodiment shown, the gas distribution plate 112 includes a plurality of channels 130 formed in the back surface 115. Each of the plurality of channels 130 extends a distance toward the front surface 114 to a channel bottom 131, and an aperture 133 is positioned within the channel 130 such that the aperture 133 extends from the channel bottom 131 to the front surface 114 of the gas distribution plate 112.

[0042]

[0049] In the embodiment shown, the gas distribution plate 112 has a sealing region 135 at its periphery. The sealing region 135 in some embodiments extends beyond the back surface 115 and is not part of the back surface 115. The sealing region 135 in some embodiments has one or more contact surfaces configured to be positioned adjacent to or in contact with an adjacent component. In some embodiments, the sealing region 135 has a first contact surface 136 and a second contact surface 137.

[0043]

[0050] In some embodiments, the first contact surface 136 includes a purge channel 140 formed therein. The purge channel 140 has a width Wp measured from the center of the gas distribution plate toward the outer edge of the gas distribution plate and a depth Dp measured from the contact surface into the body of the gas distribution plate. The width Wp of the purge channel 140 can be any suitable width. In some embodiments, the width Wp of the purge channel 140 is in the range of about 0.1 mm to about 50 mm, or in the range of about 0.5 mm to about 25 mm, or in the range of about 1 mm to about 10 mm. In some embodiments, the depth Dp of the purge channel 140 is in the range of about 0.1 mm to about 10 mm, or in the range of about 0.5 mm to about 5 mm.

[0044]

[0051] The purge channels 140 extend around the perimeter of the back surface 115 of the gas distribution plate 112. The boundary of the back surface 115 in some embodiments is the area of ​​the gas distribution plate 112 within the perimeter of the purge channels 140. In some embodiments, the width and / or depth of the purge channels 140 vary along the length of the channel, such that the purge channels are wider in some areas and deeper in other areas. In some embodiments, the width and / or depth of the purge channels remain substantially the same along their length (perimeter measured at the center width of the channel). When used in this manner, the term "substantially the same" means that the width of the channel at any location is within ±10%, ±5%, ±2%, or ±1% of the average width of the channel.

[0045]

[0052] The gas distribution assembly 105 includes a lid 180. The lid 180 has a back surface 181 and a front surface 182. The lid 180 is configured such that the front surface 182 is positioned adjacent to the back surface 115 of the gas distribution plate 112. In some embodiments, the lid 180 directly contacts the gas distribution plate 112. In some embodiments, the lid 180 contacts the gas distribution plate via one or more O-rings.

[0046]

[0053] The lid 180 of some embodiments includes a purge gas line 190 having one or more openings 191 in a front surface 182 of the lid 180. In some embodiments, the openings 191 of the purge gas line 190 extend around the periphery of the front surface 182, separating the front surface 182 from the contact surface outside the periphery of the purge gas line openings 191. The purge gas line 190 has a purge gas line inlet 192 (shown in FIG. 8 ) and a purge gas line outlet 193 (shown in FIGS. 6 and 7 ). The purge gas line inlet 192 and outlet 193 each have an opening 191 in the front surface 182. In some embodiments, the openings 191 of the inlet 192 and the openings 191 of the outlet 193 align with the purge channels 140 formed in the first contact surface 136 of the gas distribution plate 112.

[0047]

[0054] In some embodiments, the primary O-ring 150 is positioned between the purge channel 140 of the first contact surface 136 and the second contact surface 137. In some embodiments, the primary O-ring 150 is positioned in a primary O-ring recess 151 in the first contact surface 136 of the gas distribution plate 112. The depth of the primary O-ring recess 151 can vary based on, for example, the particular O-ring 150 or lid geometry used. Any suitable material known to one of ordinary skill in the art can be used for the primary O-ring 150.

[0048]

[0055] 6 and 7, a secondary O-ring 155 is positioned between the back surface 115 of the gas distribution plate 112 and the front surface 182 of the lid 180. In some embodiments, as shown, the secondary O-ring 155 is positioned on the opposite side of the purge channels 190 from the primary O-ring 150. In other words, in some embodiments, the secondary O-ring 155 is positioned within the periphery of the primary O-ring 150 or within the periphery of the purge channels 190. The secondary O-ring 155 in some embodiments isolates the isolation O-ring channels between the channels of the gas distribution plate.

[0049]

[0056] The secondary O-ring 155 of some embodiments isolates adjacent channels 130 formed in the back surface 115 of the gas distribution plate 112. In some embodiments, the secondary O-ring 155 is positioned within a recess 184 formed in one or both of the back surface 115 of the gas distribution plate 112 or the front surface 182 of the lid 180. The illustrated embodiment shows the secondary O-ring 155 positioned within the recess 184 in the front surface 182 of the lid 180. The secondary O-ring 155 of some embodiments aligns with the outer edge 138 of the outermost channel 130a. The secondary O-ring 155 of some embodiments separates the gas flow path from the lid 180 through the gas distribution plate 112 to the processing chamber from the purge channel 190.

[0050]

[0057] In some embodiments, there is a secondary O-ring 155 positioned between each of the channels 130 in the back surface 115 of the gas distribution plate 112. In some embodiments, the secondary O-ring 155 aligns with the partitions that separate adjacent channels. In some embodiments, the channels 130 form one or more intertwined spiral paths, the recesses 184 have a complementary shape, and the secondary O-ring 155 extends along the recesses 184.

[0051]

[0058] Some embodiments of the gas distribution plate 112 further include a spacer ring 330 between the gas distribution plate 112 and the opening 310 of the top plate 300. The spacer ring 330 has an inner surface 337, an outer surface 338, and a back surface 332. The inner surface 337 is positioned adjacent to the outer surface 141 of the gas distribution plate 112. As shown in FIG. 7 , in some embodiments, the back surface 332 of the spacer ring 330 is positioned adjacent to the third contact surface 143 in the sealing region 135 of the gas distribution plate 112.

[0052]

[0059] 5 and 8, the gas distribution plate 112 of some embodiments further comprises a spacer ring 330 purge gas line 336 that extends through the gas distribution plate 112 from the back surface of the sealing area 135 to the third contact surface 143. In some embodiments, the spacer ring purge gas line 336 includes a spacer ring purge gas line inlet 336a having an opening 341 on the back surface of the sealing area 135 of the gas distribution plate 112 and a spacer ring purge gas line outlet 336b having an opening 341 on the back surface of the sealing area 135 of the gas distribution plate 112. In some embodiments, the inlet opening 341 and the outlet opening 341 are aligned with the spacer ring purge channel 371. In some embodiments, the spacer ring purge channel 371 is formed in the third contact surface 143 of the gas distribution plate 112, as shown in FIG. 7, the spacer ring purge channel 371 is formed in the back surface 332 of the spacer ring 330. In some embodiments, a spacer ring purge channel O-ring 372 is within the spacer ring purge channel 371.

[0053]

[0060] As shown in Figures 5 and 8, some embodiments of the gas distribution assembly 105 further include a pressure transducer 390 in communication with the purge gas line inlet 192. In some embodiments, the pressure transducer 390 is in fluid communication with the purge gas line inlet 192 such that the purge gas 391 flowing through the line 392 can be controlled to maintain a pressure differential. In some embodiments, the pressure transducer 390 simultaneously controls the flow of purge gas to both the purge gas line inlet 192 and the spacer ring purge gas line inlet 336a. In some embodiments, there is a separate pressure transducer for the spacer ring purge gas line 336a that is different from the purge gas line inlet 192. In some embodiments, a pressure gauge 393 is in the purge gas line upstream of the inlet 192. In some embodiments, there is a pressure gauge 393 location in the purge gas line outlet 193. In some embodiments, a pressure transducer 390 is in communication with one or more of the purge gas line inlets 192 of the spacer ring purge gas line inlet 336a. In some embodiments, a pressure transducer 390 is in communication with one or both of the purge gas line inlet 192 or the spacer ring purge gas line inlet 336a. In some embodiments, a pressure gauge 393 is positioned in one or both of the purge gas line exhaust 193 or the spacer ring gas line exhaust 336b.

[0054]

[0061] Some embodiments of the gas distribution assembly 105 include a controller 495, as shown in FIG. 4. The controller 495 of some embodiments is configured to control the pressure transducer 390 based on measurements from the pressure gauge 393 to provide a flow of inert gas to the purge gas line inlet 192 sufficient to maintain substantially no pressure difference between the gas distribution plate 112 and the purge channel 140. In some embodiments, the controller 495 is configured to control the pressure transducer 390 based on measurements from the pressure gauge 393 to provide a flow of inert gas to one or both of the purge gas line inlet 192 or the spacer ring gas line inlet 336a sufficient to maintain substantially no pressure difference between the gas distribution plate 112 and the purge channel 140 or between the gas distribution plate 112 and the spacer ring purge channel 371.

[0055]

[0062] One or more embodiments of the present disclosure are directed to a method of sealing a processing chamber. The pressure in the purge gas line is measured at any suitable location along the flow path of the purge gas. In some embodiments, the pressure is measured upstream of the purge gas line inlet, within the purge gas line channel, or downstream of the purge gas line outlet. A flow of inert gas is provided to the purge channel such that there is substantially no pressure difference between the gas distribution plate (or process pressure) and the purge channel.

[0056]

[0063] The processes may generally be stored in memory as software routines that, when executed by a processor, cause the processing chamber to perform the processes of the present disclosure. The software routines may be stored and / or executed by a second processor (not shown) that is remote from the hardware controlled by the processor. Some or all of the methods of the present disclosure may also be performed in hardware. Thus, the processes may be implemented in software and executed using a computer system in hardware (e.g., an application specific integrated circuit or other type of hardware implementation) or a combination of software and hardware. The software routines, when executed by a processor, transform a general-purpose computer into a special-purpose computer (controller) that controls the operation of the chamber so that the processes are performed.

[0057]

[0064] In some embodiments, the controller 495 has one or more configurations for performing individual or sub-processes to carry out the methods. The controller 495 may be connected to and configured to operate intermediate components to carry out the functions of the methods. For example, the controller 495 may be connected to and configured to control one or more of gas valves, actuators, motors, slit valves, vacuum controls, etc.

[0058]

[0065] The controller 495 in some embodiments has one or more configurations selected from configurations for measuring pressure in one or both of the gas distribution plate 112 channels 130 or the spacer ring purge gas channels 371, configurations for activating a pressure transducer 390 to flow purge gas to the purge gas line 190 or the spacer ring purge gas line 336, and configurations for controlling the flow of purge gas in response to readings from pressure gauges in one or both of the purge gas outlet lines or channels in the gas distribution plate.

[0059]

[0066] Throughout this specification, references to "one embodiment," "a particular embodiment," "one or more embodiments," or "an embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of the disclosure. Thus, the appearances of "in one or more embodiments," "in a particular embodiment," "in one embodiment," or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment of the disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0060]

[0067] Although the disclosure of this specification has been described with reference to specific embodiments, those skilled in the art will understand that the described embodiments are merely illustrative of the principles and applications of the present disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the method and apparatus of the present disclosure without departing from the spirit and scope of the present disclosure. Thus, the present disclosure is intended to include modifications and variations that come within the scope of the appended claims and their equivalents.

Claims

1. 1. A gas distribution assembly comprising: a gas distribution plate having a front surface and a back surface defining a thickness, the gas distribution plate including a plurality of apertures extending through the thickness of the gas distribution plate and having a sealing area at an outer periphery, the sealing area having a first contact surface with a purge channel formed therein, and a second contact surface; a lid having a front surface and a back surface defining a thickness, the front surface of the lid being positioned adjacent the back surface of the gas distribution plate, the lid including a purge gas line inlet having an opening on the front surface and a purge gas line exhaust having an opening on the front surface, the purge gas line inlet opening and the purge gas line exhaust opening being aligned with the purge channel of the first interface; a primary O-ring positioned between the purge channel of the first contact surface and the second contact surface; a spacer ring having an inner surface and a back surface, the inner surface adjacent an outer surface of the gas distribution plate and the back surface adjacent a third contact surface in the sealing region of the gas distribution plate; a spacer ring purge gas line extending through the gas distribution plate from a back surface of the sealing area to the third contact surface, the spacer ring purge gas line including a spacer ring purge gas line inlet having an opening at the third contact surface of the gas distribution plate and a spacer ring purge gas line outlet having an opening at the third contact surface of the gas distribution plate, the opening of the spacer ring purge gas line inlet and the opening of the spacer ring purge gas line outlet being aligned with a spacer ring purge channel; Equipped with The gas distribution assembly, wherein the sealing region seals the gas distribution plate and the lid, the second contact surface is located on an outer periphery of the first contact surface, and the purge gas is an inert gas.

2. The gas distribution assembly of claim 1 , wherein the primary O-ring is positioned in a primary O-ring recess in the first contact surface.

3. The gas distribution assembly of claim 1 , further comprising a secondary O-ring between the back surface of the gas distribution plate and the front surface of the lid.

4. The gas distribution assembly of claim 3 , wherein the secondary O-ring is on an opposite side of the purge channel from the primary O-ring.

5. The gas distribution assembly of claim 3 , wherein the secondary O-ring is in a recess formed in one or both of the back surface of the gas distribution plate or the front surface of the lid.

6. The gas distribution assembly of claim 1 , further comprising a pressure transducer in communication with the purge gas line inlet.

7. The gas distribution assembly of claim 6 , further comprising a pressure gauge positioned at the purge gas line outlet.

8. 8. The gas distribution assembly of claim 7, further comprising: a controller configured to control the pressure transducer based on measurements from the pressure gauge to provide a flow of inert gas to the purge gas line inlet sufficient to maintain no pressure differential between gas through the gas distribution plate and gas in the purge channel.

9. The gas distribution assembly of claim 8 , wherein the spacer ring purge channel is formed in one or both of the third contact surface or the back surface of the spacer ring.

10. 10. The gas distribution assembly of claim 9, further comprising a pressure transducer in communication with one or both of the purge gas line inlet or the spacer ring purge gas line inlet.

11. The gas distribution assembly of claim 10 , further comprising a pressure gauge positioned at one or both of the purge gas line outlet or the spacer ring purge gas line outlet.

12. 12. The gas distribution assembly of claim 11, further comprising a controller configured to control the pressure transducer based on measurements from the pressure gauge to provide a flow of inert gas to one or both of the purge gas line inlets or spacer ring purge gas line inlets sufficient to maintain no pressure differential between gas passing through the gas distribution plate and gas in the purge channels or between gas passing through the gas distribution plate and gas in the spacer ring purge channels.

13. 2. The gas distribution assembly of claim 1, wherein the gas distribution plate comprises a plurality of channels formed in the back surface, each of the plurality of channels extending a distance toward the front surface to a channel bottom, and the apertures are positioned within the channels so as to extend from the channel bottom to the front surface of the gas distribution plate.

14. A processing chamber comprising: a chamber body having a sidewall and a bottom defining a processing space; a substrate support in the processing space having a support surface; 10. A gas distribution assembly comprising: a gas distribution plate, a lid, a primary O-ring, a spacer ring, and a spacer ring purge gas line, the gas distribution plate having a front side facing the support surface of the substrate support, the front side and the back side defining a thickness, the gas distribution plate including a plurality of apertures extending through the thickness of the gas distribution plate and having a sealing region at an outer periphery, the sealing region having a first contact surface with a purge channel formed therein, and a second contact surface, the lid having a front side and a back side defining a thickness, the front side of the lid is positioned adjacent the back side of the gas distribution plate, the lid including a purge gas line inlet having an opening on the front side and a purge gas line exhaust having an opening on the front side, the openings of the purge gas line inlet and the openings of the purge gas line exhaust are aligned with the purge channels of the first contact surface, the primary O-ring is configured to seal the purge channels of the first contact surface against the first contact surface. a spacer ring having an inner surface and a back surface, the inner surface adjacent an outer surface of the gas distribution plate and the back surface adjacent a third contact surface of the sealing region of the gas distribution plate, the spacer ring purge gas line extending through the gas distribution plate from the back surface of the sealing region to the third contact surface, the spacer ring purge gas line including a spacer ring purge gas line inlet having an opening at the third contact surface of the gas distribution plate and a spacer ring purge gas line outlet having an opening at the third contact surface of the gas distribution plate, the opening of the spacer ring purge gas line inlet and the opening of the spacer ring purge gas line outlet align with a spacer ring purge channel, the sealing region seals the gas distribution plate and the lid, the second contact surface is located on an outer periphery of the first contact surface, and the purge gas is an inert gas. A processing chamber comprising:

15. 15. The process chamber of claim 14, further comprising a pressure transducer in communication with one or both of the purge gas line inlet or spacer ring purge gas line inlet, a pressure gauge positioned at one or both of the purge gas line exhaust or spacer ring purge gas line exhaust, and a controller, wherein the pressure transducer, the pressure gauge, and the controller are configured such that the controller controls the pressure transducer based on measurements from the pressure gauge to provide a flow of inert gas into one or both of the purge gas line inlet or spacer ring purge gas line inlet sufficient to maintain no pressure difference between gas passing through the gas distribution plate and gas in the purge channel or between gas passing through the gas distribution plate and gas in the spacer ring purge channel.

16. 15. A method of sealing a processing chamber according to claim 14, comprising the steps of: measuring a pressure in a purge gas line downstream of a purge gas line outlet aligned with a purge channel in a gas distribution assembly including a gas distribution plate and a lid separated by a primary O-ring, the purge gas line being in fluid communication with the purge channel and a purge gas line inlet, the purge gas line inlet and the purge gas line outlet each aligned with the purge channel; providing a flow of inert gas to the purge channels such that there is no pressure differential between gas through the gas distribution plate and gas in the purge channels.

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