Semiconductor Device

Abstract

To provide a semiconductor device with improved reliability.SOLUTION: A semiconductor device 100 includes: a semiconductor chip 2 having a bottom surface 2a having a first area and a side surface 2b; and an electrode 10 provided below the semiconductor chip, the electrode including a first portion having an upper surface 12a and a second portion 14, the electrode containing an electrically conductive material. The upper surface has a second area larger than the first area, and at least a part of the upper surface is in contact with the bottom surface 2a.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The embodiment of the present invention is a semiconductor device. Place Regarding. [Background technology]

[0002] Semiconductor devices such as metal oxide semiconductor field effect transistors (MOSFETs) are used for applications such as power conversion, etc. After being formed on a semiconductor wafer, such semiconductor devices are singulated into individual chips by a prescribed dicing process. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-096265 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a semiconductor device with improved quality. [Means for solving the problem]

[0005] The semiconductor device of the embodiment includes a semiconductor chip having a bottom surface having a first area and a side surface, and a , small an electrode including an electrically conductive material, the electrode including a first portion having a top surface at least a part of which is in contact with a bottom surface, and a second portion connected to an end of the first portion and disposed obliquely downward with respect to a semiconductor chip; The second area, which is the sum of the area of ​​the top surface of the first portion and the area of ​​the top surface of the second portion, is larger than the first area. And, it is equipped with. [Brief description of the drawings]

[0006] [Figure 1] 1 is a schematic cross-sectional view of a semiconductor device according to a first embodiment. [Diagram 2]2A to 2C are schematic cross-sectional views showing a manufacturing process of the semiconductor device according to the first embodiment. [Diagram 3] FIG. 11 is a schematic cross-sectional view of a semiconductor device according to a second embodiment. [Figure 4] 5A to 5C are schematic cross-sectional views showing a manufacturing process of the semiconductor device according to the second embodiment. [Diagram 5] FIG. 11 is a schematic cross-sectional view of a semiconductor device according to a third embodiment. [Figure 6] 10A to 10C are schematic cross-sectional views showing a manufacturing process of the semiconductor device according to the third embodiment. [Figure 7] FIG. 13 is a schematic cross-sectional view of a semiconductor device according to a fourth embodiment. [Figure 8] 10A to 10C are schematic cross-sectional views showing a manufacturing process of the semiconductor device according to the fourth embodiment. [Figure 9] FIG. 13 is a schematic cross-sectional view of a semiconductor device according to a fifth embodiment. [Figure 10] 13A to 13C are schematic cross-sectional views showing a manufacturing process of the semiconductor device according to the fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description, the same members are designated by the same reference numerals, and the description of members that have already been described will be omitted as appropriate.

[0008] In this specification, in order to indicate the positional relationship of parts, etc., the upward direction of the drawing is described as "upper" and the downward direction of the drawing is described as "lower." In this specification, the concepts of "upper" and "lower" are not necessarily terms that indicate a relationship with the direction of gravity.

[0009] (First embodiment) The semiconductor device of this embodiment includes a semiconductor chip having a bottom surface with a first area and a side surface, and an electrode provided below the semiconductor chip, having a second area larger than the first area, having a top surface at least a portion of which contacts the bottom surface, and including an electrically conductive material.

[0010] 1 is a schematic cross-sectional view of a semiconductor device 100 according to the present embodiment. The semiconductor device 100 according to the present embodiment is, for example, a MOSFET or an IGBT (Insulated Gate Bipolar Transistor).

[0011] The semiconductor chip 2 has a bottom surface 2a, a first side surface 2b (a side surface of a semiconductor chip, an example of a side surface), and a top surface 2c. The area of ​​the bottom surface 2a is a first area S1. The semiconductor chip 2 includes a semiconductor material. Here, the semiconductor material is, for example, Si (silicon), SiC (silicon carbide), GaAs (gallium arsenide), GaN (gallium nitride), etc., but is not limited thereto. For example, a MOSFET device or an IGBT device is formed on the top surface 2c. When a MOSFET device is formed, for example, a source electrode or a gate electrode of the MOSFET (not shown) is provided on the top surface 2c.

[0012] The electrode 10 is provided under the semiconductor chip 2 and contacts the bottom surface 2a. For example, when the semiconductor chip 2 is a MOSFET chip, the electrode 10 is a drain electrode of the MOSFET. The electrode 10 has a first portion 12 and a second portion 14. The first portion 12 contacts the bottom surface 2a. The first portion 12 has an upper surface 12a and a second side surface 12b (side surface of the electrode). The second portion 14 has an upper surface 14a. The second portion 14 is connected to an end of the first portion 12. The second portion 14 is provided obliquely downward with respect to the semiconductor chip 2. The sum of the area of ​​the upper surface 12a of the first portion 12 and the area of ​​the upper surface 14a of the second portion 14 is a second area S2 of the electrode 10. The second area S2 is larger than the first area S1. For example, the area of ​​the upper surface 12a of the first portion 12 is equal to the first area S1 of the bottom surface 2a of the semiconductor chip 2. The electrode 10 includes an electrically conductive material, such as, but not limited to, Cu (copper), Al (aluminum), Ni (nickel), Ag (silver), or Au (gold).

[0013] Here, an X direction, a Y direction perpendicular to the X direction, and a Z direction perpendicular to the X direction and Y direction are defined. The bottom surface 2a is provided parallel to the XY plane.

[0014] As a modified example of this embodiment, a structure in which a resin such as adhesive 52 described later is left (provided) in the area above the upper surface 14a of the second portion 14 so as to cover the first side surface 2b and the second side surface 12b (so as to contact the first side surface 2b, the second side surface 12b, and the upper surface 14a) may be used.

[0015] 2A to 2C are schematic cross-sectional views showing the manufacturing process of the semiconductor device 100 of this embodiment.

[0016] The method for manufacturing a semiconductor device of this embodiment includes forming a first trench in a semiconductor substrate having a first surface and a second surface, the first trench not penetrating the semiconductor substrate, removing a portion of the semiconductor substrate on the second surface side so as to expose the first trench to form a third surface of the semiconductor substrate, forming a film having an electrically conductive material on the third surface, and removing a portion of film 70 formed adjacent to the first trench, the width of which is narrower than the width of the first groove.

[0017] The semiconductor substrate 50 has a first surface 50a and a second surface 50b. For example, a MOSFET device or an IGBT device is formed on the first surface 50a. As described below, an electrode 10 is formed on the second surface 50b after grinding.

[0018] The semiconductor substrate 50 includes a semiconductor material, such as, but not limited to, Si (silicon), SiC (silicon carbide), GaAs (gallium arsenide), or GaN (gallium nitride).

[0019] A first groove 62 (an example of a groove) that does not penetrate the semiconductor substrate 50 is formed in the semiconductor substrate 50 from the side of the first surface 50a of the semiconductor substrate 50. The first groove 62 has a bottom 64. The first groove 62 has a width d1. The first groove 62 may be formed by blade dicing using a blade. The first groove 62 may be formed by laser dicing using a laser. The first groove 62 may be formed by plasma dicing. The plasma dicing is dicing that is performed by repeating, for example, isotropic etching using F (fluorine) radicals, formation of a protective film containing CF4 (carbon tetrafluoride) radicals, and anisotropic etching using F ions.

[0020] The first grooves 62 are formed parallel to the Y direction. However, the first grooves 62 may be formed in a lattice shape parallel to the X direction.

[0021] Next, the adhesive 52 is applied to the first surface 50a and the first groove 62 so as to fill up to the bottom 64 of the first groove 62. Note that, as the adhesive 52, for example, an acrylic adhesive, an epoxy adhesive, or a silicone adhesive can be preferably used.

[0022] Next, the semiconductor substrate 50 is fixed to the substrate 60 using an adhesive 52. The substrate 60 is a support substrate made of, for example, glass. The semiconductor substrate 50 is fixed onto the substrate 60 using the adhesive 52 so that the substrate surface of the substrate 60 is parallel to the first surface 50a and the second surface 50b (FIG. 2(a)).

[0023] Next, a portion of the semiconductor substrate 50 on the second surface 50b side is removed by, for example, grinding so as to expose the first groove 62 (FIG. 2(b)).

[0024] Next, a portion of the semiconductor substrate 50 is removed, for example, by wet etching, to form a third surface 50c on the semiconductor substrate 50. As a result, a portion of a third side surface 56 (a side surface of the adhesive, an example of a side surface) and an upper portion 54 of the adhesive 52 are exposed and protrude above the third surface 50c (FIG. 2(c)).

[0025] Next, a film 70 having an electrically conductive material is formed on the third surface 50c and the adhesive 52 by, for example, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), electrolytic plating, electroless plating, or the like. A convex portion 72 is formed on the upper portion 54 of the adhesive 52 (FIG. 2(d)).

[0026] Next, a second groove 74 having a width d2 narrower than the width d1 of the first groove 62 is formed in the film 70 on the adhesive 52 formed in the first groove 62 from the third surface 50c side by, for example, blade dicing or laser dicing. As a result, a part of the protrusion 72 of the film 70 formed adjacent to and above the first groove 62 is removed. The second portion 14 is formed from the protrusion 72. The part of the film 70 where the protrusion 72 was not formed becomes the first portion 12 (FIG. 2(e)).

[0027] Next, the first portion 12 is attached to a dicing tape (not shown) so that the first portion 12 is in contact with the dicing tape, and then the substrate 60 is peeled off. Next, the adhesive 52 is peeled off from the semiconductor substrate 50, thereby obtaining the semiconductor device 100 of this embodiment.

[0028] Next, the effects of this embodiment will be described.

[0029] Previously, the semiconductor substrate 50 and the film 70 were processed together using the same manufacturing process. However, for example, in the case of processing using blade dicing, there was a problem that the semiconductor substrate 50 cracked at the timing when the processing stage switched from cutting the semiconductor substrate 50 to cutting the film 70. In addition, in the case of processing using laser dicing, the electrically conductive material contained in the film 70 was sometimes attached to the first side surface 2b of the semiconductor chip 2. There was a problem that the attached electrically conductive material caused the electrode 10 provided on the bottom surface 2a of the semiconductor device and the electrode provided on the top surface 2c not shown in FIG. 1 to be electrically conductive. In particular, in a semiconductor device in which the electrode 10 is thick, the film 70 to be cut is thick, so that more electrically conductive material volatilizes when the film is cut 70. Therefore, the amount of electrically conductive material attached to the first side surface 2b also tends to increase. Therefore, such a problem became more serious.

[0030] Therefore, in the method for manufacturing a semiconductor device according to the present embodiment, a first groove 62 that does not penetrate a semiconductor substrate 50 is formed in the semiconductor substrate 50 from the first surface 50a side of the semiconductor substrate 50 having a first surface 50a and a second surface 50b. A part of the semiconductor substrate 50 on the second surface 50b side is removed so that the first groove 62 is exposed, thereby forming a third surface 50c of the semiconductor substrate 50. A part of the film 70 formed adjacent to the first groove 62 is removed by a width d2 narrower than the width d1 of the first groove 62.

[0031] In the method for manufacturing a semiconductor device according to the present embodiment, the dicing of the semiconductor substrate 50 and the dicing of the film 70 are performed in separate steps. This makes it possible to avoid the above-mentioned problems and provide a semiconductor device with improved quality.

[0032] Moreover, in the manufacturing method of the semiconductor device of this embodiment, the adhesive 52 is applied to the first groove 62 so as to fill the first groove 62 up to the bottom 64 of the first groove 62. The adhesive 52 is also applied to the first surface 50a. Then, a part of the semiconductor substrate 50 on the second surface 50b side is removed so as to expose the first groove 62 and the third side surface 56 of the adhesive 52. This manufacturing method is preferable for implementing a manufacturing method in which dicing of the semiconductor substrate 50 and dicing of the film 70 are performed in separate steps.

[0033] The semiconductor device of this embodiment comprises a semiconductor chip 2 having a bottom surface 2a with a first area S1 and a first side surface 2b, and an electrode 10 that is provided below the semiconductor chip 2, has a top surface 12a with a second area S2 larger than the first area S1, at least a portion of which contacts the bottom surface 2a, and contains an electrically conductive material.

[0034] For example, when the semiconductor substrate 50 and the film 70 are diced by blade dicing, the blade is unlikely to sharpen spontaneously during dicing of the film 70. This causes cracks and chipping in the semiconductor substrate 50, resulting in a problem of reduced mechanical strength and reliability. However, as described above, according to the semiconductor device of this embodiment, the dicing of the semiconductor substrate 50 and the dicing of the film 70 are performed in separate steps, making it possible to provide a high-quality semiconductor device.

[0035] Furthermore, when dicing the film 70 by laser dicing, unlike blade dicing, burrs are unlikely to occur on the film 70. Such burrs can be an obstacle when picking up the semiconductor device, for example, by a suction collet. However, with the semiconductor device of this embodiment, picking up is easy, so that the semiconductor device is unlikely to fall during pick-up, causing damage to the inside of the semiconductor device, or chip cracks, etc. As a result, it is possible to provide a high-quality semiconductor device.

[0036] Since the second area S2 of the top surface 12a of the electrode 10 is larger than the first area S1 of the bottom surface 2a of the semiconductor chip 2, the heat dissipation through the electrode 10 is improved. In addition, the second portion 14 provided diagonally downward with respect to the semiconductor chip 2 promotes heat dissipation from the second portion 14, further improving the heat dissipation of the semiconductor chip 2. This makes it possible to provide a high-quality semiconductor device.

[0037] According to the semiconductor device and the manufacturing method thereof of the present embodiment, it is possible to provide a high-quality semiconductor device.

[0038] Second embodiment The semiconductor device of this embodiment differs from the semiconductor device of the first embodiment in that the electrode has a first portion in contact with the bottom surface and a third portion connected to an end of the first portion in contact with the side surface. Here, description of the contents that overlap with the first embodiment will be omitted.

[0039] FIG. 3 is a schematic cross-sectional view of a semiconductor device 110 of this embodiment.

[0040] The electrode 10 has a first portion 12 in contact with the bottom surface 2a, and a third portion 16 connected to an end of the first portion 12 and in contact with the first side surface 2b. In addition, a first recess 18 is provided at the end of the first portion 12.

[0041] 4A to 4C are schematic cross-sectional views showing the manufacturing process of the semiconductor device 110 of this embodiment.

[0042] In this embodiment, the adhesive 52 is applied to the first surface 50a and the first groove 62 so as not to fill up to the bottom 64 of the first groove 62. Therefore, a gap 66 is formed at the bottom 64 of the first groove 62 (FIG. 4(a)).

[0043] Next, a portion of the semiconductor substrate 50 on the second surface 50b side is removed, for example, by grinding, so as to expose the first groove 62 (FIG. 4(b)). Next, a portion of the semiconductor substrate 50 is removed, for example, by wet etching, to form a third surface 50c on the semiconductor substrate 50. Here, a portion of the third side surface 56 and the upper portion 54 of the adhesive 52 are not exposed (FIG. 4(c)). It should be noted that the third surface 50c may be formed by grinding without performing wet etching.

[0044] Next, a film 70 having an electrically conductive material is formed on the third surface 50c and the adhesive 52 by, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), electrolytic plating, electroless plating, or the like. A second recess 76 is formed in the upper portion 54 of the adhesive 52 (FIG. 4(d)).

[0045] Next, a second groove 74 having a width d2 narrower than the width d1 of the first groove 62 is formed in the film 70 on the adhesive 52 formed in the first groove 62 from the third surface 50c side by, for example, blade dicing or laser dicing. As a result, a part of the second recess 76 of the film 70 formed adjacent to and above the first groove 62 is removed. The part of the film 70 formed so as to be in contact with the first groove 62 becomes the third portion 16. Also, a part of the second recess 76 becomes the first recess 18 (FIG. 4(e)).

[0046] Since the electrode 10 has a first portion 12 in contact with the bottom surface 2a and a third portion 16 connected to an end of the first portion 12 and in contact with the first side surface 2b, heat dissipation from the third portion 16 is promoted. This further improves the heat dissipation of the semiconductor chip 2. This makes it possible to provide a high-quality semiconductor device.

[0047] In the method for manufacturing the semiconductor device of this embodiment, the semiconductor substrate 50 has a first surface 50a and a second surface 50b. A first groove 62 is formed in the semiconductor substrate 50 from the first surface 50a side, and before a part of the semiconductor substrate 50 on the second surface 50b side is removed so as to expose the first groove 62, the adhesive 52 is applied to the first surface 50a and the first groove 62 so as not to fill the bottom of the first groove 62, and the semiconductor substrate 50 having the first groove 62 is fixed to the substrate 60, and a part of the semiconductor substrate 50 on the second surface 50b side is removed so as not to expose the side of the adhesive 54. This manufacturing method is preferable for implementing a manufacturing method in which the dicing of the semiconductor substrate 50 and the dicing of the film 70 are performed in separate steps.

[0048] The semiconductor device and the manufacturing method thereof according to the present embodiment also make it possible to provide a high-quality semiconductor device.

[0049] Third embodiment The semiconductor device of this embodiment differs from the first and second embodiments in that the electrodes are parallel to the bottom surface and protrude beyond the side surfaces. Here, description of the contents that overlap with the first and second embodiments will be omitted.

[0050] 5 is a schematic cross-sectional view of a semiconductor device 120 of this embodiment. The electrode 10 has a fourth portion 20 that is parallel to the bottom surface 2a of the semiconductor chip 2 and protrudes beyond the first side surface 2b of the semiconductor chip 2.

[0051] 6A to 6C are schematic cross-sectional views showing the manufacturing process of the semiconductor device 120 of this embodiment. After the adhesive 52 is applied so as to fill the first groove 62 up to the bottom 64, the semiconductor substrate 50 is fixed to the substrate 60 using the adhesive 52, as in the first embodiment (FIG. 6A).

[0052] Next, a portion of the semiconductor substrate 50 on the second surface 50b side is removed, for example, by grinding, so as to expose the first groove 62. Here, wet etching is not performed, and the process proceeds to the next step of the film 70, so that the height of the adhesive 52 in the first groove 62 in the Z direction and the height of the third surface 50c become equal (FIG. 6(b)).

[0053] Next, a film 70 having an electrically conductive material is formed on the third surface 50c and the adhesive 52 by, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), electrolytic plating, electroless plating, or the like. No convex portion 72 or second concave portion 76 is formed on the upper portion 54 of the adhesive 52 (FIG. 4(c)).

[0054] Next, a second groove 74 having a width d2 narrower than the width d1 of the first groove 62 is formed in the film 70 on the adhesive 52 formed in the first groove 62 from the third surface 50c side by, for example, blade dicing or laser dicing. This removes a part of the film 70 formed on the first groove 62, adjacent to the first groove 62. The film 70 on the adhesive 52 becomes the fourth portion 20 (FIG. 6(d)).

[0055] Since the electrode 10 has the fourth portion 20 that is parallel to the bottom surface 2a and protrudes beyond the first side surface 2b of the semiconductor chip, heat dissipation from the fourth portion 20 is promoted. This further improves the heat dissipation of the semiconductor chip 2. This makes it possible to provide a high-quality semiconductor device.

[0056] In the method for manufacturing a semiconductor device of this embodiment, a portion of the semiconductor substrate 50 on the second surface 50b side is removed so as not to expose the side surfaces of the first groove 62 and the adhesive 52. This manufacturing method is preferable for implementing a manufacturing method in which dicing of the semiconductor substrate 50 and dicing of the film 70 are performed in separate steps.

[0057] The semiconductor device and the manufacturing method thereof according to the present embodiment also make it possible to provide a high-quality semiconductor device.

[0058] (Fourth embodiment) The semiconductor device of this embodiment includes a semiconductor chip having a bottom surface with a first area, a side surface, and an electrode provided under the semiconductor chip, having a second area smaller than the first area, having a top surface at least a portion of which contacts the bottom surface, and containing an electrically conductive material. Here, descriptions of contents that overlap with the first to third embodiments will be omitted.

[0059] 7 is a schematic cross-sectional view of a semiconductor device 130 of this embodiment. The second area S2 of the upper surface 12a of the electrode 10 is smaller than the first area S1 of the bottom surface 2a of the semiconductor chip 2.

[0060] 8A to 8C are schematic cross-sectional views showing the manufacturing process of the semiconductor device 130 of this embodiment.

[0061] The method for manufacturing a semiconductor device of this embodiment includes forming a trench in a semiconductor substrate having a first surface and a second surface from the first surface side of the semiconductor substrate, removing a portion of the semiconductor substrate on the second surface side so as to expose the trench, thereby forming a third surface of the semiconductor substrate, forming a film having an electrically conductive material on the third surface, and removing a portion of film 70 formed adjacent to the trench, the width of which is wider than the width of the trench.

[0062] Similar to the first embodiment, adhesive 52 is applied to the first surface 50a and the first groove 62 so as to fill the first groove 62 up to the bottom 64, and then the semiconductor substrate 50 is fixed to the substrate 60 using adhesive 52 (FIG. 8(a)).

[0063] Next, a portion of the semiconductor substrate 50 on the second surface 50b side is removed, for example by grinding, so that the height of the adhesive 52 in the first groove 62 in the Z direction is equal to the height of the third surface 50c (FIG. 8(b)). After this, wet etching may be performed to expose the upper portion 54 of the adhesive 52.

[0064] Next, a film 70 having an electrically conductive material is formed on the third surface 50c and the adhesive 52 by, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), electrolytic plating, electroless plating, or the like. No convex portion 72 or second concave portion 76 is formed on the upper portion 54 of the adhesive 52 (FIG. 8(c)).

[0065] Next, a second groove 74 having a width d3 wider than the width d1 of the first groove 62 is formed on the adhesive 52 formed in the first groove 62 from the third surface 50c side by, for example, blade dicing or laser dicing (FIG. 8(d)). The film 70 remaining on the third surface 50c becomes the electrode 10.

[0066] In the method for manufacturing a semiconductor device according to the present embodiment, the dicing of the semiconductor substrate 50 and the dicing of the film 70 are also performed in separate steps. This makes it possible to avoid the above-mentioned problems and provide a semiconductor device with improved quality.

[0067] For example, when the semiconductor substrate 50 and the film 70 are diced by blade dicing, the blade is unlikely to sharpen spontaneously during dicing of the film 70. This causes cracks and chipping in the semiconductor substrate 50, resulting in a problem of reduced mechanical strength and reliability. However, as described above, according to the semiconductor device of this embodiment, the dicing of the semiconductor substrate 50 and the dicing of the film 70 are performed in separate steps, making it possible to provide a high-quality semiconductor device.

[0068] Furthermore, when dicing the film 70 by laser dicing, unlike blade dicing, burrs are unlikely to occur on the film 70. Such burrs can be an obstacle when picking up the semiconductor device, for example, by a suction collet. However, with the semiconductor device of this embodiment, picking up is easy, so that the semiconductor device is unlikely to fall during pick-up, causing damage to the inside of the semiconductor device, or chip cracking, etc. As a result, it is possible to provide a high-quality semiconductor device.

[0069] The second area S2 of the top surface 12a of the electrode 10 is smaller than the first area S1 of the bottom surface 2a of the semiconductor chip 2. This allows the amount of die bond agent to be reduced when the semiconductor device 100 is fixed to a pad or the like using a die bond agent or the like. This makes it difficult for the die bond agent to creep up onto the first side surface 2b of the semiconductor chip 2, resulting in a poor electrical connection between the electrode 10 and an electrode provided on the top surface 2c (not shown in FIG. 7).

[0070] The semiconductor device and the manufacturing method thereof according to the present embodiment also make it possible to provide a high-quality semiconductor device.

[0071] Fifth embodiment The semiconductor device of this embodiment differs from the fourth embodiment in that a third recess is provided at the end of the bottom surface of the semiconductor chip. Here, description of contents that overlap with the first to fourth embodiments will be omitted.

[0072] 9 is a schematic cross-sectional view of a semiconductor device 140 of this embodiment. A third recess 2d is provided at an end of a bottom surface 2a of the semiconductor chip.

[0073] 10 is a schematic cross-sectional view of a method for manufacturing a semiconductor device 140 of this embodiment. This embodiment differs from the fourth embodiment in that a third recess 2d is formed when a second groove 74 having a width d3 wider than the width d1 of the first groove 62 is formed on the adhesive 52 formed in the first groove 62 from the third surface 50c side by, for example, blade dicing or laser dicing (FIG. 8(d)).

[0074] The semiconductor device and the manufacturing method thereof according to the present embodiment also make it possible to provide a high-quality semiconductor device.

[0075] Although some embodiments and examples of the present invention have been described, these embodiments and examples are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0076] 2: Semiconductor chips 2a: Bottom 2b: First side (side of semiconductor chip, side) 2c:Top surface 2d: Third recess 10: Electrode 12: 1st part 12a:Top surface 12b: Second side (side of electrode) 14:Second part 14a:Top surface 16: 3rd part 18: First recess 20: 4th part 50: Semiconductor substrate 50a: Side 1 50b: 2nd side 50c: 3rd side 52: Adhesive 54: Top 56: Third side (adhesive side, side) 60: Substrate 62: 1st groove (groove) 64: Bottom 66 :Void 70: Membrane 72: Convex 74:Second groove 76: Second recess 100: Semiconductor device 110: Semiconductor device 120: Semiconductor device 130: Semiconductor device 140: Semiconductor device S1: 1st area S2: 2nd area

Claims

1. a semiconductor chip having a bottom surface with a first area and a side surface; an electrode including an electrically conductive material, the electrode having a first portion provided under the semiconductor chip and having an upper surface with at least a portion contacting the bottom surface, and a second portion connected to an end of the first portion and provided obliquely downward with respect to the semiconductor chip, the electrode having a second area, which is the sum of an area of ​​the upper surface of the first portion and an area of ​​the upper surface of the second portion, that is larger than the first area; A semiconductor device comprising:

2. The second portion is connected to both ends of the first portion. The semiconductor device according to claim 1.

3. the second portion is not provided above a bottom surface of the semiconductor chip; 3. The semiconductor device according to claim 1.

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