DEPOSITION MASK DEVICE, SUPPORT FOR DEPOSITION MASK DEVICE, METHOD FOR MANUFACTURING ... ORGANIC SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ORGANIC EL DISPLAY DEVICE, AND DEPOSITION METHOD

Abstract

To provide a vapor deposition mask device capable of enhancing bond strength between a resin mask and a support; a vapor deposition mask device support; a method for manufacturing the vapor deposition mask device; a method for manufacturing an organic semiconductor element; a method for manufacturing an organic EL display; and a vapor deposition method.SOLUTION: A vapor deposition mask device 10 includes: a resin mask 30 including a plurality of openings 31 corresponding to a pattern formed by vapor-deposition; and a support 40 bonded to the resin mask 30. A recessed part 42 is formed on a portion bonded to the resin mask 30 in the support 40, and a resin material 35 is arranged in the recessed part 42.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present embodiment relates to a deposition mask device, a support for the deposition mask device, a method for manufacturing the deposition mask device, a method for manufacturing an organic semiconductor element, a method for manufacturing an organic EL display device, and a deposition method. [Background technology]

[0002] Conventionally, metal masks have been used as deposition masks for manufacturing products using organic EL elements. Meanwhile, in recent years, there has been a demand for forming finer through openings in deposition masks. To form finer through openings, the deposition mask needs to be thinner. Under these circumstances, in order to make the deposition mask thinner, resin masks have been developed instead of metal masks.

[0003] Since deposition masks are very thin, ranging from a few μm to a few tens of μm, they are often fixed to a rigid frame before use. Metal frames are preferably used from the viewpoints of strength, dimensional stability, etc. Metal masks are made of metal, and can be fixed to a metal frame by welding. On the other hand, it is difficult to fix a resin mask to a metal frame, which is a different material, and the method of fixing the mask is an issue. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 6163376 Summary of the Invention [Problem to be solved by the invention]

[0005] Patent Document 1 discloses a technique in which a metal layer is provided on a part of a resin film, and the metal holding member and the film are spot-welded using the metal layer. However, in this case, the resin mask may be damaged in the process of providing the metal layer on the resin mask. In addition, while the presence of the metal holding member makes it easier to weld the resin film and the holding member, wrinkles may occur between the part of the resin film with the metal holding member and the part without the metal holding member.

[0006] The present disclosure provides a deposition mask device capable of increasing the bonding strength between a resin mask and a support, a support for the deposition mask device, a method for manufacturing the deposition mask device, a method for manufacturing an organic semiconductor element, a method for manufacturing an organic EL display device, and a deposition method. [Means for solving the problem]

[0007] The deposition mask apparatus according to this embodiment includes a resin mask having a plurality of openings corresponding to a pattern to be formed by deposition, and a support body joined to the resin mask, in which a recess is formed in a portion of the support body joined to the resin mask, and a resin material is disposed in the recess.

[0008] In the deposition mask apparatus according to the present embodiment, the resin mask may be bonded to the support by the resin material.

[0009] In the deposition mask apparatus according to the present embodiment, the resin material may be different from the material of the resin mask.

[0010] In the deposition mask apparatus according to the present embodiment, the resin material may be a part of the resin mask.

[0011] In the deposition mask apparatus according to the present embodiment, the resin material may be the same as the material of the resin mask.

[0012] In the deposition mask apparatus according to the present embodiment, an arithmetic mean height Sa of a portion of the support body joined to the resin mask may be 0.001 μm or more and 0.1 μm or less.

[0013] The support for the deposition mask apparatus according to the present embodiment is a support for the deposition mask apparatus to which a resin mask having a plurality of openings corresponding to a pattern to be formed by deposition is bonded, and a recess is formed in the portion to be bonded to the resin mask.

[0014] The method for manufacturing a deposition mask device according to this embodiment includes the steps of preparing a support, fixing a resin layer to the support, and forming a plurality of openings in the resin layer corresponding to a pattern to be formed by deposition. A recess is formed in a portion of the support that is joined to the resin layer, and a resin material is disposed in the recess.

[0015] In the method for manufacturing the deposition mask device according to the present embodiment, the step of fixing the resin layer to the support may include the step of joining the resin layer to the support by the resin material.

[0016] In the method for manufacturing the deposition mask device according to the present embodiment, the step of fixing the resin layer to the support may include a step of causing the resin material, which is a part of the resin layer, to flow into the recess.

[0017] In the manufacturing method of the deposition mask device according to the present embodiment, the process of fixing the resin layer to the support may include a first fixing process of fixing the resin layer and the support while applying tension to the resin layer, and a second fixing process of fixing the resin layer and the support while not applying tension to the resin layer.

[0018] The manufacturing method of an organic EL display device according to the present embodiment is a manufacturing method of an organic EL display device, and includes a step of forming a deposition pattern on a deposition target using the deposition mask device according to the present embodiment.

[0019] The vapor deposition method according to the present embodiment includes the steps of preparing a vapor deposition mask device according to the present embodiment, preparing a vapor deposition object, placing the vapor deposition object on the vapor deposition mask device, and depositing a vapor deposition material on the vapor deposition object placed on the vapor deposition mask device.

[0020] The manufacturing method of an organic EL display device according to the present embodiment is a manufacturing method of an organic EL display device, and includes a step of forming a deposition pattern on a deposition target using the deposition mask device manufactured by the manufacturing method of a deposition mask device according to the present embodiment.

[0021] The deposition method according to the present embodiment includes the steps of preparing a deposition mask device manufactured by the deposition mask device manufacturing method according to the present embodiment, preparing a deposition object, placing the deposition object on the deposition mask device, and depositing a deposition material on the deposition object placed on the deposition mask device.

[0022] The method for manufacturing an organic semiconductor element according to the present embodiment is a method for manufacturing an organic semiconductor element, and includes a step of forming a deposition pattern on a deposition target using the deposition mask device according to the present embodiment.

[0023] The manufacturing method of an organic semiconductor element according to the present embodiment is a manufacturing method of an organic semiconductor element, and includes a step of forming a deposition pattern on a deposition target using a deposition mask device manufactured by the manufacturing method of a deposition mask device according to the present embodiment. Effect of the Invention

[0024] According to this embodiment, the bonding strength between the resin mask and the support body can be increased. [Brief description of the drawings]

[0025] [Figure 1] FIG. 1 is a plan view showing a deposition mask device according to an embodiment. [Diagram 2]FIG. 2 is a cross-sectional view (a cross-sectional view taken along line II-II in FIG. 1) showing the deposition mask device according to one embodiment. [Diagram 3] 3(a)-(g) are plan views showing modified examples of the fine projections and recesses of the support. [Figure 4] 4(a) to 4(c) are cross-sectional views showing modified examples of the fine projections and recesses of the support. [Diagram 5] 5(a)-(h) are cross-sectional views showing a method for manufacturing a deposition mask device according to one embodiment. [Figure 6] FIG. 6 is a schematic diagram showing a deposition apparatus. [Figure 7] FIG. 7 is a schematic diagram showing an organic EL display device produced using the deposition mask device. [Figure 8] 8(a)-(h) are schematic diagrams showing a method for manufacturing an organic EL display device using a deposition mask device. [Figure 9] FIG. 9 is a partially enlarged cross-sectional view showing a modified example of the deposition mask device. [Figure 10] 10(a) and 10(b) are cross-sectional views showing some steps of a manufacturing method of a deposition mask device according to a modified example. [Figure 11] 11(a) and (b) are partially enlarged cross-sectional views showing a modified example of the deposition mask device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] Each embodiment will be described below with reference to the drawings. Each of the figures shown below is a schematic illustration. Therefore, the size and shape of each part are appropriately exaggerated to facilitate understanding. In addition, it is possible to carry out appropriate modifications within the scope of the technical idea. In each of the figures shown below, the same parts are given the same reference numerals, and some detailed explanations may be omitted. In addition, the numerical values ​​such as dimensions of each member and the material names described in this specification are examples of embodiments, and are not limited to these, and can be appropriately selected and used. In this specification, terms that specify shapes and geometric conditions, such as parallel, orthogonal, and vertical, are intended to include substantially the same state in addition to their strict meanings.

[0027] In this specification, the X direction and the Y direction are two directions parallel to each side of the deposition mask apparatus 10, and the X direction and the Y direction are perpendicular to each other. The Z direction is a direction perpendicular to both the X direction and the Y direction. Moreover, the terms "inner" and "inside" refer to the side facing the center of the deposition mask apparatus 10, and the terms "outer" and "outside" refer to the side away from the center of the deposition mask apparatus 10.

[0028] An embodiment will be described with reference to Figures 1 to 8. Figures 1 to 8 are diagrams showing this embodiment.

[0029] (Configuration of deposition mask device) The configuration of the deposition mask apparatus according to the present embodiment will be described with reference to FIGS.

[0030] 1 and 2, the deposition mask device 10 according to the present embodiment includes a resin mask 30 provided with a plurality of openings 31 corresponding to a pattern to be formed by deposition, and a support 40 joined to the resin mask 30. A recess 42 is formed in a portion of the support 40 that is joined to the resin mask 30, and a resin material 35 is disposed in the recess 42.

[0031] The deposition mask device 10 is used to simultaneously form deposition patterns for multiple screens, and one deposition mask device 10 can simultaneously form deposition patterns corresponding to multiple products. Here, the "opening" means a pattern to be produced using the deposition mask device 10. For example, when the deposition mask device 10 is used to form an organic layer in an organic EL display, the shape of the opening 31 is the shape of the organic layer. Furthermore, "one screen" is composed of a collection of openings 31 corresponding to one product, and when the one product is an organic EL display, a collection of organic layers required to form one organic EL display, that is, a collection of openings 31 that become the organic layer, becomes "one screen". The area that becomes one screen is also called "effective part". In addition, in the deposition mask device 10, in order to simultaneously form deposition patterns for multiple screens, the above-mentioned "one screen" is arranged in the resin mask 30 at a predetermined interval for multiple screens. In other words, the resin mask 30 is provided with the openings 31 required to form the multiple screens.

[0032] The resin mask 30 is provided on one surface (the surface on the positive side in the Z direction) of the support 40. The resin mask 30 has a rectangular shape with each side extending in the X direction and the Y direction. The resin mask 30 has a first surface 30a and a second surface 30b located on the opposite side to the first surface 30a. The first surface 30a is a surface facing the opposite side of the support 40 (the positive side in the Z direction), and the second surface 30b is a surface facing the support 40 side (the negative side in the Z direction).

[0033] The resin mask 30 is provided with openings 31 used to form multiple screens. Each opening 31 has a quadrilateral shape, specifically, a rectangular shape with each side extending in the X direction and the Y direction. The corners of the quadrilateral forming the opening 31 may be rounded.

[0034] The resin mask 30 includes an effective area 32 in which openings 31 are formed in a regular arrangement, and a peripheral area 33 surrounding the effective area 32. The peripheral area 33 is an area for supporting the effective area 32, and is not an area through which a deposition material 92 (see FIG. 6) intended to be deposited on a deposition target substrate 91 passes. On the other hand, in a deposition mask device 10 used for deposition of an organic light-emitting material, the effective area 32 is an area in the deposition mask device 10 that faces an area that becomes a display area of ​​the deposition target substrate 91 where the organic light-emitting material is deposited to form pixels. However, for various purposes, through holes and recesses may be formed in the peripheral area 33. Only the resin mask 30 exists in the effective area 32. That is, no metal layer that supports the resin mask 30 exists in the effective area 32. Although the resin mask 30 is made of a resin material, other materials such as a metal layer may exist in an area of ​​the resin mask 30 that does not contribute to bonding with the support 40, for example, for the purpose of forming an alignment mark. 1, each effective area 32 may have a substantially quadrangular outline in plan view, or more precisely, a substantially rectangular outline in plan view. Although not shown, each effective area 32 may have an outline of various shapes depending on the shape of the display area of ​​the deposition substrate 91. For example, each effective area 32 may have a circular outline.

[0035] 1, a plurality of effective areas 32 of the deposition mask device 10 are arranged at a predetermined interval along two directions perpendicular to each other. In the illustrated example, one effective area 32 corresponds to one organic EL display device. That is, the deposition mask device 10 according to the present embodiment enables multi-surface deposition. Moreover, the plurality of openings 31 formed in each effective area 32 may be arranged at a predetermined pitch along the X direction and the Y direction perpendicular to each other in the effective area 32.

[0036] The multiple openings 31 are aligned in the X and Y directions and may have the same shape. The length L1 of one side of each opening 31 (length in the X and Y directions) may be, for example, 5 μm or more and 120 μm or less. Specifically, the length L1 may be, for example, 100 μm or more and 120 μm or less in the case of low resolution (200 ppi), and may be, for example, 5 μm or more and 20 μm or less in the case of high resolution (1000 ppi or more and 3000 ppi or less). The pitch P1 of each opening 31 (center-to-center distance of the openings 31 in the X and Y directions) may be, for example, 6 μm or more and 400 μm or less. Specifically, the pitch P1 may be, for example, 110 μm or more and 400 μm or less in the case of low resolution (200 ppi), and may be, for example, 6 μm or more and 100 μm or less in the case of high resolution (1000 ppi or more and 3000 ppi).

[0037] In plan view, the minimum distance D1 between the support 40 and the opening 31 may be 1 mm or more. This allows a wide region for forming the deposition pattern while leaving a margin in the manufacturing process of the deposition mask device 10.

[0038] As shown in FIG. 2, the periphery of each opening 31 may be tapered. In this case, each opening 31 has a shape in which the opening area gradually increases from the first surface 30a side (positive side in the Z direction) toward the second surface 30b side (negative side in the Z direction). The periphery of each opening 31 is inclined with respect to the normal direction (Z direction) of the resin mask 30 in a cross-sectional view. The periphery of each opening 31 may be inclined linearly or curvedly inclined in a cross-sectional view. The length L1 of one side of each opening 31 and the pitch P1 of each opening 31 described above refer to the length measured on the side where the area of ​​each opening 31 is narrower (the first surface 30a side).

[0039] The resin mask 30 can be made of a conventionally known resin material, and the material is not particularly limited. The resin mask 30 is preferably made of a material that allows high-definition openings 31 to be formed by laser processing or the like, has a small dimensional change rate and moisture absorption rate due to heat or over time, and is lightweight. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyethylene terephthalate resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene-vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, and ionomer resin. Among the materials exemplified above, a resin material whose thermal expansion coefficient is 16 ppm / °C or less is preferable, a resin material whose moisture absorption rate is 1.0% or less is preferable, and a resin material that satisfies both of these conditions is particularly preferable. By using this resin material to make a resin mask, the dimensional accuracy of the opening 31 can be improved, and the dimensional change rate and moisture absorption rate due to heat and time can be reduced. In addition, it is preferable to use a resin material whose difference in thermal expansion coefficient with the material constituting the support 40 is 15 ppm / °C or less, and the difference may be 10 ppm / °C or less. This makes it possible to prevent wrinkles from occurring in the resin mask 30 due to the difference in thermal expansion coefficient with the support 40. The resin mask 30 may contain a filler other than the resin material. The filler may include pigments, particles of inorganic materials, etc.

[0040] The thickness T1 of the resin mask 30 is not particularly limited, but may be 1 μm or more and 25 μm or less, preferably 1 μm or more and 5 μm or less, and more preferably 1 μm or more and 3 μm or less. By setting the thickness T1 of the resin mask 30 within this range, the risk of defects such as pinholes and deformations can be reduced, and the occurrence of shadows can be effectively prevented. In particular, by setting the thickness T1 of the resin mask 30 to 1 μm or more and 5 μm or less, a high-definition pattern exceeding 1000 ppi can be formed.

[0041] Next, the support 40 will be described. The support 40 according to the present embodiment is a support for a deposition mask device to which the resin mask 30 having a plurality of openings 31 corresponding to a pattern to be formed by deposition is bonded. The support 40 has recesses 42 formed in the portion to be bonded to the resin mask 30.

[0042] The support 40 is provided on one surface (second surface 30b) of the resin mask 30. In this embodiment, the support 40 is bonded to the resin mask 30 by the resin material 35 arranged in the recess 42. The resin material 35 exists in the area where the support 40 and the resin mask 30 overlap in a plan view. From another perspective, the resin mask 30 located inside the support 40 exists as a free-standing membrane (free-standing thin film) without being supported by a metal layer or the like. In the illustrated example, the support 40 is bonded to the resin mask 30 without a metal layer that supports the resin mask 30.

[0043] The support 40 has a first surface 40a and a second surface 40b located on the opposite side of the first surface 40a. The first surface 40a faces the resin mask 30 (positive side in the Z direction), and the second surface 40b faces the opposite side of the resin mask 30 (negative side in the Z direction). The recess 42 is formed on the first surface 40a of the support 40. In this embodiment, fine irregularities including the recess 42 are formed on the first surface 40a of the support 40. In FIG. 1, the area of ​​the first surface 40a on which the fine irregularities are formed is shown by shading. The fine irregularities are formed on the entire first surface 40a of the support 40. However, this is not limited to this, and the fine irregularities may be formed on a part of the first surface 40a of the support 40. In this case, the fine irregularities may be formed on all or a part of the area of ​​the first surface 40a of the support 40 that is bonded to the resin mask 30.

[0044] As shown in FIG. 2, the fine irregularities include a plurality of recesses 42 and a plurality of protrusions 43, and are formed in a jagged shape in cross section. The resin material 35 is embedded in the recesses 42. That is, the resin material 35 is bonded to the support 40 by being cured in the recesses 42. The surface of the resin material 35 located on the opposite side of the support 40 is bonded to the second surface 30b of the resin mask 30. This allows the support 40 and the resin mask 30 to be bonded to each other using the resin material 35. In particular, the resin material 35 entering the recesses 42 increases the mechanical bond strength between the resin material 35 and the support 40, and can exert an anchor effect. This allows the bond between the support 40 and the resin mask 30 to be strong.

[0045] In this embodiment, the shape of the fine irregularities is formed in a jagged shape in a cross-sectional view, but the shape of the fine irregularities is not limited to this and can be selected appropriately.

[0046] For example, as shown in FIG. 3(a), the planar shape of each recess 42 may be circular, and the multiple recesses 42 may be arranged in a staggered pattern. As shown in FIG. 3(b), the planar shape of each recess 42 may be circular, and the multiple recesses 42 may be arranged in a lattice pattern. As shown in FIG. 3(c), the planar shape of each recess 42 may be triangular, and the multiple recesses 42 may be arranged in a staggered pattern. As shown in FIG. 3(d), the planar shape of each recess 42 may be triangular, and the multiple recesses 42 may be regularly arranged in a lattice pattern, and the triangles of adjacent recesses 42 may face opposite directions. As shown in FIG. 3(e), the planar shape of each recess 42 may be rectangular or square, and the multiple recesses 42 may be arranged in a staggered pattern. As shown in FIG. 3(f), the planar shape of each recess 42 may be star-shaped, and the multiple recesses 42 may be arranged in a staggered pattern. As shown in FIG. 3(g), the planar shape of each recess 42 may be pentagonal, and the multiple recesses 42 may be arranged in a staggered pattern. In addition, in FIGS. 3(a)-(g), the multiple recesses 42 are arranged regularly in plan view, but the present invention is not limited to this, and they may be arranged irregularly.

[0047] As shown in Fig. 4(a), the cross-sectional shape of each recess 42 may be a rectangle or a square. As shown in Fig. 4(b), the cross-sectional shape of each recess 42 may be a triangle, and the area of ​​the opening may become smaller from the first surface 40a to the second surface 40b. As shown in Fig. 4(c), the cross-sectional shape of each recess 42 may be a trapezoid, and the area of ​​the opening may become larger from the first surface 40a to the second surface 40b. Note that, although the multiple recesses 42 are regularly arranged in Figs. 4(a)-(c), the present invention is not limited to this, and they may be irregularly arranged.

[0048] The arithmetic mean height Sa of the portion (first surface 40a) of the support 40 that is bonded to the resin mask 30 may be 0.001 μm or more and 1 μm or less, and is preferably 0.001 μm or more and 0.1 μm or less. The "arithmetic mean height (Sa)" is a parameter obtained by expanding the arithmetic mean height (Ra) of a line to a surface, and is a value calculated by averaging the absolute values ​​of the heights of each point with respect to the average surface of the surface to be measured. The arithmetic mean height (Sa) can be calculated, for example, by measuring the surface of the support 40 using a shape analysis laser microscope and calculating it according to a method conforming to ISO 25178. By making the arithmetic mean height Sa of the portion of the support 40 that is bonded to the resin mask 30 0.001 μm or more, it is possible to easily exert an anchor effect that enhances the mechanical bond strength between the resin material 35 and the support 40. By setting the arithmetic mean height Sa of the portion of the support 40 that is joined to the resin mask 30 to 1 μm or less, the adhesive strength between the resin mask 30 and the support 40 can be improved by the anchor effect while maintaining the thickness necessary to function as a deposition mask.

[0049] The fine irregularities of the support 40 may be formed, for example, by roughening a flat (untreated) support 40. Examples of such roughening include a blasting method using sandblasting, a laser processing method, a microetching method, and a cutting method. The recesses 42 and the protrusions 43 of the support 40 are irregularly formed in a cross-sectional view, but the recesses 42 and the protrusions 43 may be regularly formed.

[0050] The resin mask 30 is composed of a separate member from the resin material 35. The resin mask 30 is bonded to the support 40 by the resin material 35. The resin material 35 may be a material different from that of the resin mask 30. Therefore, an interface F exists between the resin mask 30 and the resin material 35.

[0051] The resin material 35 may be, for example, a thermosetting, photosetting, or thermoplastic adhesive. The resin material 35 may be embedded in the recess 42 of the support 40 in advance. The resin material 35 embedded in the recess 42 may then be brought into contact with the resin mask 30, and the resin material 35 may then be cured. The method of joining the support 40 and the resin mask 30 may include, in addition to the adhesion method using the resin material 35, which is the adhesive described above, a welding method, a melting method, a pressure-sensitive adhesive method, a joining method using a thermoplastic resin, and a method using a polyimide precursor instead of an adhesive. As a result, even if the resin mask 30 is thinned to, for example, about 1 μm or more and 5 μm or less, the resin mask 30 itself is configured as a self-supporting membrane, so that the occurrence of wrinkles in the resin mask 30 that occurs when there is a metal layer supporting the resin mask can be suppressed. In this specification, the support 40 and the resin mask 30 being bonded together includes not only the case where the support 40 and the resin mask 30 are directly bonded together without any intervening member between them (see, for example, FIG. 9), but also the case where the support 40 and the resin mask 30 are bonded together through an intervening member (which may be a member containing a metal material or a member not containing a metal material), such as an adhesive which is a resin material 35, for the sole purpose of bonding the support 40 and the resin mask 30 together.

[0052] The resin material 35 may be the same as the material of the resin mask 30. In this case, the resin material 35 may be any of the various materials listed as the materials of the resin mask 30 described above. Methods for joining the support 40 and the resin mask 30 include, for example, a welding method, a melting method, a pressure-sensitive adhesive method, a joining method using a thermoplastic resin, and a method using a polyimide precursor instead of an adhesive. The resin material 35 may be embedded in the recess 42 of the support 40 in advance, and then the resin material 35 may be brought into contact with the resin mask 30 and cured. By making the resin material 35 the same as the material of the resin mask 30 in this way, the joining strength between the resin material 35 and the resin mask 30 can be further increased.

[0053] The support 40 may be a frame that supports the resin mask 30. The support 40 supports the resin mask 30 in a state where the resin mask 30 is pulled in the direction of its surface so that the resin mask 30 does not bend. The support 40 is a frame-shaped member having a substantially rectangular shape, and has a through hole 41 for exposing the openings 31 provided in the resin mask 30 to the deposition source side. That is, the multiple openings 31 are located inside the through hole 41 in a plan view. The outer periphery of the support 40 is larger than the outer periphery of the resin mask 30. However, without being limited thereto, the outer periphery of the support 40 may have a shape smaller than the outer periphery of the resin mask 30, and the outer periphery of the resin mask 30 and the outer periphery of the support 40 may have the same shape. There is no particular limitation on the material of the support 40, but a metal material with high rigidity, for example, SUS, Invar material, ceramic material, resin material, semiconductor material such as silicon, etc. can be used.

[0054] The thickness T2 of the support 40 is not particularly limited, but is preferably about 10 mm or more and 30 mm or less in terms of rigidity, etc. The width W1 between the outer peripheral end face of the through hole 41 of the support 40 and the outer peripheral end face of the support 40 is not particularly limited as long as the width is sufficient to fix the support 40 and the resin mask 30, and can be, for example, about 10 mm or more and 250 mm or less.

[0055] (Manufacturing method of deposition mask device) Next, a method for manufacturing the deposition mask device according to the present embodiment will be described with reference to Fig. 5(a)-(h). Fig. 5(a)-(h) are process diagrams for explaining the method for manufacturing the deposition mask device according to the present embodiment.

[0056] First, as shown in FIG. 5(a), a substrate 51 is prepared. The substrate 51 is for supporting a resin layer 30A described later. The surface of the substrate 51, particularly the surface on which the resin layer 30A described later is formed, preferably has a small surface roughness. For example, the surface roughness of the substrate 51 may be set to an arithmetic mean height Sa of 1 μm or less. The "arithmetic mean height (Sa)" is a parameter obtained by extending the arithmetic mean height (Ra) of a line to a surface, and is a value calculated by averaging the absolute values ​​of the heights of each point with respect to the average surface of the surface to be measured. The arithmetic mean height (Sa) can be calculated, for example, by measuring the surface of the substrate 51 using a shape analysis laser microscope and calculating by a method conforming to ISO 25178. Examples of materials for the substrate 51 include glass, resin, silicon, and metals such as SUS. In particular, it is desirable to use transparent glass, taking into consideration the flatness of the surface and peeling by a laser lift-off method described later. For example, the transparent glass may have a transmittance of 80% or more for light with a wavelength of 308 nm. The thickness of the substrate 51 may be, for example, not less than 0.1 mm and not more than 10 mm.

[0057] Next, as shown in FIG. 5(b), a resin layer 30A is formed on one surface of the substrate 51. This resin layer 30A is for producing the resin mask 30 of the deposition mask device 10 described above. Specifically, a resin solution such as a polyamic acid solution, which is a precursor of polyimide, is applied to the substantially entire surface of the substrate 51, and the resin layer 30A is obtained by heat-treating the applied solution. Alternatively, the resin layer 30A may be obtained by applying a resin solution such as a polyimide varnish, heating it, and drying it. Examples of a method for applying the resin solution include a spin coat method, a die coat method, a slit coat method, a dip coat method, and a spray coat method. The thickness of the applied resin solution may be, for example, 1 μm or more and 25 μm or less, preferably 1 μm or more and 5 μm or less, and more preferably 1 μm or more and 3 μm or less. The material of the resin layer 30A is not limited to polyimide, and a material with a small thermal expansion coefficient can be suitably used. The resin layer 30A may be formed by attaching a film-like material to the surface of the substrate 51. The resin layer 30A may have a single-layer structure, or may have a multi-layer structure in which a plurality of layers are laminated.

[0058] Next, as shown in FIG. 5(c), the substrate 51 is removed from the resin layer 30A to obtain the resin layer 30A. The method for removing the substrate 51 from the resin layer 30A may be a laser lift-off method, a peeling method, a water immersion method, or the like. When using the peeling method, the resin layer 30A may be formed larger than the substrate 51 to provide a portion that triggers peeling, or a physical notch may be provided at the end of the substrate 51 to provide a portion that triggers peeling. In addition, in order to improve the handleability of the resin layer 30A, a re-peelable film for reinforcement (not shown) may be attached to the surface of the resin layer 30A after the substrate 51 is removed. In addition, a release agent may be applied to the substrate 51 in advance to make it easier to remove from the resin layer 30A.

[0059] Next, as shown in Fig. 5(d), a frame-shaped support 40 is prepared. In the support 40, fine irregularities including recesses 42 and protrusions 43 are formed at least on the first surface 40a, which is the portion bonded to the resin mask 30. As described above, the recesses 42 and protrusions 43 of the support 40 may be formed by roughening the portion of the support 40 that is bonded to the resin layer 30A. Examples of such roughening include a blasting method using sandblasting, a laser processing method, a microetching method, and a cutting method.

[0060] 5(e), the resin material 35 is placed in the recess 42 of the support 40. As described above, the resin material 35 may be, for example, a thermosetting, photosetting, or thermoplastic adhesive. In this case, the resin material 35, which is an adhesive, may be applied to the first surface 40a of the support 40 so as to be poured into the recess 42. Thereafter, the excess portion of the resin material 35 may be scraped off with a spatula or the like, and the surface facing the resin layer 30A may be flattened.

[0061] Next, as shown in FIG. 5(f), the resin layer 30A is fixed to the support 40. As a result, the resin layer 30A is fixed to the first surface 40a of the support 40. Specifically, the resin layer 30A is joined to the support 40 by the resin material 35, which is an adhesive, in a stretched state. At this time, the outer periphery of the resin layer 30A is gripped by a plurality of grips 55, and the resin layer 30A is in a state of being pulled in the surface direction. In this state, the resin layer 30A is joined to the support 40 by the resin material 35 previously arranged in the recess 42. At this time, a pressing member 56 may be arranged at a position on the opposite side of the support 40 with respect to the resin layer 30A, and the support 40 may be pressed against the pressing member 56. This makes it easier to join the resin layer 30A to the support 40. Thereafter, the resin material 35 hardens, and the resin layer 30A and the support 40 are firmly fixed to each other via the resin material 35. The resin layer 30A and the support 40 may be fixed over the entire surface where they contact, or over a portion of the surface where they contact. The resin layer 30A may be fixed to the support 40 without being pulled. The resin material 35, which is an adhesive, is disposed in the recess 42 of the support 40 in advance, but this is not limited thereto. The disposition of the resin material 35 on the support 40 and the bonding of the resin layer 30A and the resin material 35 may be performed simultaneously (in the same process).

[0062] The method of joining the support 40 and the resin layer 30A includes, in addition to the adhesion method using the resin material 35, which is the adhesive described above, for example, a welding method, a melting method, an adhesion method, a thermocompression bonding method, a bonding method using a thermoplastic resin, and a method using a polyimide precursor instead of an adhesive. The welding method is a method of joining the support 40 and the resin layer 30A by melting the resin layer 30A and the resin material 35 with heat. The melting method is a method of joining the support 40 and the resin layer 30A using the resin material 35, which is a heat-welding film. The adhesion method is a method of joining the support 40 and the resin layer 30A using the resin material 35, which is an adhesive. The thermocompression bonding method is a method of thermocompression bonding the support 40, the resin material 35, and the resin mask 30 by temperature and heat. The bonding method is a method of joining the support 40 and the resin layer 30A using the resin material 35, which is a thermoplastic resin. The method of using a polyimide precursor instead of an adhesive is a method of bonding the support 40 and the resin layer 30A using a resin material 35, which is a polyimide precursor, instead of an adhesive.

[0063] In this embodiment, the support 40 is fixed to the surface (second surface 30b) of the resin layer 30A that was not in contact with the substrate 51. The first surface 30a of the resin layer 30A is the surface that was in contact with the substrate 51, and has a higher flatness than the second surface 30b. Therefore, by fixing the support 40 to the second surface 30b side of the resin layer 30A, the surface with higher flatness (first surface 30a) can be opposed to the deposition substrate 91 side. However, this is not limiting, and the support 40 may be fixed to the first surface 30a of the resin layer 30A.

[0064] In this manner, as shown in FIG. 5(g), an intermediate body (also called a deposition mask preparatory body) having the resin layer 30A and the support 40 fixed to the resin layer 30A is obtained.

[0065] When bonding the support 40 and the resin layer 30A (FIGS. 5(e) and 5(f)), a two-stage fixing operation may be performed. That is, first, the resin material 35 may be placed in the recess 42 of the support 40, and the resin layer 30A and the support 40 may be temporarily fixed (first fixing) in a state in which tension is applied to the resin layer 30A by the grip 55. Thereafter, the grip 55 may be removed from the resin layer 30A, and the resin layer 30A and the support 40 may be permanently fixed (second fixing) in a state in which tension is not applied to the resin layer 30A. This allows the jig for fixing the resin layer 30A and the support 40 (for example, the pressing member 56, a flat jig for thermocompression bonding, etc.) to the grip 55 during the permanent fixing operation to be prevented from interfering with the grip 55, and the operation of bonding the resin layer 30A and the support 40 can be performed smoothly.

[0066] Next, as shown in FIG. 5(h), the resin layer 30A is irradiated with laser light (see the arrow in FIG. 5(h)) from the support 40 side to form the openings 31 in the resin layer 30A corresponding to the pattern to be formed by deposition. For example, a KrF excimer laser with a wavelength of 248 nm or a YAG laser with a wavelength of 355 nm can be used as the laser. At this time, a protective film 57 may be attached to the surface of the resin layer 30A opposite to the support 40, and in this state, the openings 31 may be formed by irradiating the laser light from the support 40 side. In this case, a laser mask (not shown) corresponding to the pattern to be formed by deposition may be used, and a condenser lens may be installed between the laser mask and the resin layer 30A, to form the openings 31 by a laser processing method using a so-called reduced projection optical system. As described above, in the deposition mask device 10 in this embodiment, the effective area 32 of the resin mask 30 is configured as a free-standing membrane without being supported by a metal layer. As a result, the tension of the grip 55 is easily transmitted to the resin mask 30, so that the occurrence of wrinkles in the resin mask 30 is suppressed.

[0067] In this manner, a deposition mask device 10 (see Figures 1 and 2) is obtained, which includes a resin mask 30 provided with a plurality of openings 31 corresponding to the pattern to be formed by deposition, and a support 40 joined to the resin mask 30.

[0068] (Configuration of deposition device) Next, a deposition apparatus for depositing a deposition material on a deposition target using the above-described deposition mask device 10 will be described with reference to FIG.

[0069] As shown in FIG. 6, the deposition apparatus 80 has a deposition source (e.g., a crucible 81), a heater 82, and a deposition mask device 10 arranged therein. The deposition apparatus 80 further has an exhaust means (not shown) for creating a vacuum atmosphere inside the deposition apparatus 80. The crucible 81 contains a deposition material 92 such as an organic light-emitting material. The heater 82 heats the crucible 81 to evaporate the deposition material 92 under a vacuum atmosphere. The deposition mask device 10 is arranged to face the crucible 81. That is, the deposition mask device 10 is arranged in the deposition apparatus 80 so that the resin mask 30 faces a deposition target substrate (e.g., an organic EL substrate) 91, which is a deposition target to which the deposition material 92 is to be attached.

[0070] Fig. 7 is a cross-sectional view showing an organic EL display device 90 manufactured using the deposition apparatus 80 shown in Fig. 6. As shown in Fig. 7, the organic EL display device 90 includes a deposition target substrate (e.g., an organic EL substrate) 91 and pixels including a deposition material 92 provided in a pattern on the deposition target substrate 91.

[0071] When a color display using a plurality of colors is desired, deposition devices 80 each equipped with a deposition mask device 10 corresponding to each color are prepared, and the deposition substrate 91 is sequentially placed in each deposition device 80. In this way, for example, a red organic light-emitting material, a green organic light-emitting material, and a blue organic light-emitting material can be deposited on the deposition substrate 91 in that order.

[0072] (Manufacturing method for organic EL display device) Next, a method for manufacturing an organic EL display device according to the present embodiment will be described with reference to Fig. 8(a)-(c). In the method for manufacturing an organic EL display device according to the present embodiment, a deposition material 92 is deposited on a deposition target substrate 91, which is a deposition object, by a deposition method using the deposition mask device 10 described above, to form a deposition pattern.

[0073] First, as shown in FIG. 8(a), a deposition mask device 10 shown in FIGS. 1 and 2, a deposition device 80 including a crucible 81 containing a deposition material 92, and a heater 82 are prepared.

[0074] 8(b), the substrate 91 to be deposited is placed on the resin mask 30 of the deposition mask device 10. At this time, for example, an alignment mark (not shown) of the substrate 91 to be deposited and an alignment mark (not shown) of the deposition mask device 10 may be directly observed, and the substrate 91 to be deposited may be placed in the deposition mask device 10 while positioning the substrate 91 so that the alignment marks overlap each other.

[0075] Next, the deposition material 92 is deposited on the deposition substrate 91 placed on the resin mask 30 of the deposition mask device 10. At this time, for example, as shown in FIG. 8(c), the surface of the deposition substrate 91 opposite to the deposition mask device 10 is brought into close contact with the resin mask 30. Next, the heater 82 heats the crucible 81 to evaporate the deposition material 92. Then, the deposition material 92 that has evaporated from the crucible 81 and reached the deposition mask device 10 passes through the openings 31 of the resin mask 30 and adheres to the deposition substrate 91.

[0076] In this manner, the deposition material 92 is deposited on the deposition substrate 91 in a desired pattern corresponding to the positions of the openings 31 in the resin mask 30. That is, the deposition material 92 is formed in a shape corresponding to the multiple openings 31 in the resin mask 30. In this manner, an organic EL display device 90 is obtained that includes a deposition substrate (e.g., an organic EL substrate) 91 and pixels including the deposition material 92 provided in a pattern (see FIG. 7).

[0077] (Method of manufacturing an organic semiconductor element) Next, a method for manufacturing an organic semiconductor device according to the present embodiment will be described. The method for manufacturing an organic semiconductor device according to the present embodiment includes a step of forming a deposition pattern on a deposition target using the deposition mask device 10 described above, or a step of forming a deposition pattern on a deposition target using the deposition mask device 10 manufactured by the method for manufacturing the deposition mask device 10 described above. The step of forming a deposition pattern on a deposition target is not limited in any way, and examples of the method include physical vapor deposition methods such as reactive sputtering, vacuum deposition, ion plating, and electron beam deposition, and chemical vapor deposition methods such as thermal CVD, plasma CVD, and photo CVD.

[0078] The manufacturing method of an organic semiconductor device according to an embodiment having a step of forming a deposition pattern on a deposition target includes an electrode forming step of forming an electrode on a substrate, an organic layer forming step, a counter electrode forming step, a sealing layer forming step, and the like, and in each optional step, a deposition pattern may be formed on a substrate by a deposition method using a deposition mask device 10. For example, when a deposition method using a deposition mask device 10 is applied to each of the steps of forming light-emitting layers of R, G, and B colors of an organic EL device, a deposition pattern of each color light-emitting layer is formed on a substrate. Note that the manufacturing method of an organic semiconductor device according to the present embodiment is not limited to these steps, and can be applied to any conventionally known process of an organic semiconductor device using a deposition method.

[0079] The deposition mask device 10 may be the deposition mask device 10 according to the present embodiment described above, and detailed description thereof will be omitted here. The deposition mask device 10 according to the present embodiment described above can form an organic semiconductor element having a highly precise pattern. Examples of the organic semiconductor element manufactured by the manufacturing method according to the present embodiment include an organic layer, a light-emitting layer, and a cathode electrode of an organic EL element. In particular, the manufacturing method for an organic semiconductor element according to the present embodiment can be suitably used for manufacturing the R, G, and B light-emitting layers of an organic EL element, which require highly precise pattern accuracy.

[0080] Thus, according to this embodiment, the recess 42 is formed in the portion (first surface 40a) of the support 40 that is to be bonded to the resin mask 30, and the resin material 35 is disposed in the recess 42. The resin mask 30 is bonded to the support 40 by the resin material 35. Thus, the resin material 35 embedded in the recess 42 serves as an anchor. As a result, even if the resin mask 30 and the support 40 are made of different materials, the support 40 and the resin mask 30 can be firmly bonded to each other. By firmly bonding the support 40 and the resin mask 30, it is possible to prevent the support 40 and the resin mask 30 from shifting during handling or use. Therefore, it is possible to prevent wrinkles from occurring in the resin mask 30 and the position of the opening 31 from shifting. This makes it possible to flatten the resin mask 30 and to make the distance between the resin mask 30 and the deposition substrate 91 uniform during deposition. As a result, it is possible to form pixels of the organic EL display device 90 with high quality.

[0081] Furthermore, according to this embodiment, the support 40 and the resin mask 30 are firmly bonded to each other, so that the resin mask 30 made of resin can be used as a deposition mask. The resin mask 30 made of resin can be made thinner than a metal mask, so that the openings 31 can be formed finer.

[0082] Furthermore, according to this embodiment, the resin material 35 may be different from the material of the resin mask 30. In this way, by appropriately selecting the resin material 35, the support 40 and the resin mask 30 can be bonded more firmly. Alternatively, the resin material 35 may be the same as the material of the resin mask 30. In this case, the resin material 35 can be bonded more firmly to the resin mask 30.

[0083] According to the present embodiment, the deposition mask device 10 includes the resin mask 30 and the support 40 bonded to the resin mask 30. By configuring the resin mask 30 itself as a self-supporting membrane, it is possible to suppress the occurrence of wrinkles in the resin mask 30, which would occur if a metal layer were present to support the resin mask 30.

[0084] (Modification) Next, various modified examples of this embodiment will be described with reference to Figures 9 to 11. In each of the modified examples shown in Figures 9 to 11, the same parts as those in the embodiment shown in Figures 1 to 8 are denoted by the same reference numerals and detailed description thereof will be omitted.

[0085] (First modified example of deposition mask device) FIG. 9 is a partially enlarged cross-sectional view showing a vapor deposition mask device 10 according to a modified example. As shown in FIG. 9, in the vapor deposition mask device 10 according to this modified example, a recess 42 is formed in a portion of the support 40 that is bonded to the resin mask 30, and a resin material 30c is disposed in the recess 42. In this case, the resin material 30c is a part of the resin mask 30. That is, a portion of the second surface 30b of the resin mask 30 that contacts the support 40 is filled in the recess 42 as the resin material 30c. The resin material 30c and other portions of the resin mask 30 are integrally configured. Therefore, there is no interface between the resin material 30c and other portions of the resin mask 30. The resin material 30c may be present in all or part of the portion of the resin mask 30 that is bonded to the support 40. The resin material 30c is the same as the material of the resin mask 30, and is composed of various materials listed as the materials of the resin mask 30 described above. The other configurations of the vapor deposition mask device 10 can be the same as the configurations of the vapor deposition mask device 10 shown in FIG. 1 and FIG. 2.

[0086] Next, a method for manufacturing the deposition mask device 10 shown in Fig. 9 will be described. First, a resin layer 30A is prepared in the same manner as in the above-mentioned steps shown in Fig. 5(a)-(c). In addition, a support 40 having a recess 42 is prepared in the same manner as in the above-mentioned step shown in Fig. 5(d).

[0087] Next, the resin layer 30A is fixed to the support 40. At this time, as shown in FIG. 10(a), the resin layer 30A is disposed on the first surface 40a side of the support 40. Specifically, the resin layer 30A is brought into contact with the support 40 in a stretched state. At this time, the outer periphery of the resin layer 30A is gripped by a plurality of grips 55, and the resin layer 30A is in a state of being pulled in the planar direction.

[0088] Next, as shown in FIG. 10(b), while the resin layer 30A is in a stretched state, heat and pressure are applied to the resin layer 30A and the support 40 to melt a part of the resin layer 30A. In particular, the part of the resin layer 30A that contacts the support 40 is melted. As a result, a part of the resin layer 30A flows into the recess 42 in a molten state, and becomes the resin material 30c and is bonded to the support 40. At this time, a thermocompression jig 58 may be disposed at a position opposite the support 40 with respect to the resin layer 30A, and the resin layer 30A may be heated and melted by the thermocompression jig 58. Thereafter, the resin material 30c, which is a part of the resin layer 30A, is cured, and the resin layer 30A and the support 40 are firmly fixed via the resin material 30c. Note that, although heat and pressure are applied only to the part of the resin layer 30A that contacts the support 40, the present invention is not limited to this, and heat and pressure may be applied to the entire resin layer 30A. The resin layer 30A and the support 40 may be fixed over the entire contact surface thereof or over a part of the contact surface thereof. Furthermore, the resin layer 30A may be fixed to the support 40 without being pulled.

[0089] The method of bonding the support 40 and the resin layer 30A includes, for example, the above-mentioned thermocompression bonding method in which the support 40 and the resin material 30c, which is a part of the resin layer 30A, are thermocompressed by temperature and heat, as well as laser welding, ultrasonic welding, etc. The laser welding method is a method in which a part of the resin layer 30A is heated and melted by laser light, and the resin layer 30A is bonded to the support 40 by the melted resin material 30c. The ultrasonic welding method is a method in which a part of the resin layer 30A is heated and melted by ultrasonic waves, and the resin layer 30A is bonded to the support 40 by the melted resin material 30c.

[0090] When bonding the support 40 and the resin layer 30A (FIGS. 10(a) and 10(b)), a two-stage fixing operation may be performed in the same manner as described above. That is, first, a part of the resin layer 30A may be melted in a state where tension is applied to the resin layer 30A by the grip 55, and the resin layer 30A and the support 40 may be temporarily fixed (first fixing) by the molten resin material 30c. Thereafter, the grip 55 may be removed from the resin layer 30A, and the resin layer 30A and the support 40 may be permanently fixed (second fixing) in a state where tension is not applied to the resin layer 30A. This allows the jig (e.g., thermocompression jig 58, etc.) for fixing the resin layer 30A and the support 40 to not interfere with the grip 55 during the permanent fixing operation, and the operation of bonding the resin layer 30A and the support 40 to each other can be performed smoothly.

[0091] Thereafter, in the same manner as in the step shown in FIG. 5(h) described above, openings 31 corresponding to a pattern to be formed by deposition are formed in the resin layer 30A, thereby obtaining the deposition mask device 10 shown in FIG.

[0092] According to this modification, the resin material 30c, which is a part of the resin mask 30, is disposed in the recess 42 of the support 40, and the resin mask 30 is bonded to the support 40 by the resin material 30c. As a result, the resin material 30c embedded in the recess 42 serves as an anchor, and the support 40 and the resin mask 30 can be firmly bonded. By firmly bonding the support 40 and the resin mask 30, it is possible to suppress the support 40 and the resin mask 30 from shifting during handling or use. Therefore, it is possible to suppress the generation of wrinkles in the resin mask 30 and the shifting of the position of the opening 31. As a result, the resin mask 30 of the deposition mask device 10 can be flattened, and the distance between the resin mask 30 and the deposition substrate 91 during deposition can be made uniform. As a result, the pixels of the organic EL display device 90 can be formed with high quality.

[0093] Furthermore, according to this modification, since the resin material 30c is made up of a part of the resin mask 30, there is no risk of the resin material 30c peeling off from the resin mask 30, and the bonding strength between the support 40 and the resin mask 30 can be increased.

[0094] (Second modified example of deposition mask device) 11(a) and (b) are partially enlarged cross-sectional views showing a vapor deposition mask device 10 according to a modified example. As shown in Fig. 11(a) and (b), in the vapor deposition mask device 10 according to this modified example, a recess 44 is formed in a portion of the support 40 that is to be joined to the resin mask 30. Resin materials 35 and 30c are disposed in the recess 44. In this case, the recess 44 is formed in a groove shape.

[0095] In FIG. 11(a)(b), the recess 44 is provided on each side of the support 40, but the present invention is not limited thereto and may be provided on each side of the support 40 in a plurality of recesses. The recess 44 may be provided over the entire circumference of the support 40, which is annular in plan view. Alternatively, the recess 44 may be provided on a part of the circumference of the support 40. As shown in FIG. 11(a)(b), the cross-sectional shape of the recess 44 may be a trapezoidal shape whose width increases from the first surface 40a to the second surface 40b. In this case, the anchor effect of the resin materials 35 and 30c can be enhanced. However, the present invention is not limited thereto and the cross-sectional shape of the recess 44 may be a trapezoid whose width decreases from the first surface 40a to the second surface 40b. Alternatively, the cross-sectional shape of the recess 44 may be a rectangular shape, a semicircular shape, an elliptical shape, or the like. Such a recess 44 may be formed by, for example, a laser processing method, a wet etching method, or a cutting method. The maximum width W2 of the recess 44 may be, for example, 0.001 μm to 1 μm, and preferably 0.01 μm to 0.1 μm. The depth d1 of the recess 44 may be, for example, 0.001 μm to 0.3 μm, and preferably 0.01 μm to 0.1 μm.

[0096] As shown in FIG. 11(a), the resin material 35 embedded in the recess 44 may be composed of a separate member from the resin mask 30. In this case, the step of bonding the resin mask 30 (resin layer 30A) to the support 40 can be performed in the same manner as the steps shown in FIG. 5(e) and (f) described above. Also, as shown in FIG. 11(b), the resin material 30c embedded in the recess 44 may be a part of the resin mask 30. In this case, the step of bonding the resin mask 30 (resin layer 30A) to the support 40 can be performed in the same manner as the steps shown in FIG. 10(a) and (b) described above. In addition, in FIG. 11(a) and (b), other configurations of the deposition mask device 10 can be the same as the configurations of the deposition mask device 10 shown in FIG. 1, FIG. 2, or FIG. 9.

[0097] (Modification of the manufacturing method of the deposition mask device) Next, various modifications of the method for manufacturing the deposition mask device will be described.

[0098] In the above embodiment, an example has been described in which the steps of (i) removing the substrate 51 from the resin layer 30A (FIG. 5(c)), (ii) fixing the resin layer 30A to the support 40 (FIGS. 5(e)-(g)), and (iii) forming a plurality of openings 31 in the resin layer 30A (FIG. 5(h)) are performed in this order, but the present invention is not limited to this.

[0099] For example, (iii) the step of forming the plurality of openings 31 in the resin layer 30A, (i) the step of removing the substrate 51 from the resin layer 30A, and (ii) the step of fixing the resin layer 30A to the support 40 may be performed in this order. As a result, the openings 31 can be formed in a state in which the resin layer 30A is fixed to the support 40, and therefore waviness of the resin layer 30A is suppressed by the support 40, and the step of forming the openings 31 can be stably performed.

[0100] Alternatively, (iii) a step of forming a plurality of openings 31 in the resin layer 30A, (ii) a step of fixing the resin layer 30A to the support 40, and (i) a step of removing the substrate 51 from the resin layer 30A may be performed in this order. This makes it possible to protect the flat surface of the resin layer 30A (the surface in contact with the substrate 51) by the substrate 51 throughout the manufacturing process of the deposition mask device 10.

[0101] Also, (ii) the step of fixing the resin layer 30A to the support 40, (i) the step of removing the substrate 51 from the resin layer 30A, and (iii) the step of forming the plurality of openings 31 in the resin layer 30A may be performed in this order. This makes it possible to easily perform the fixing operation since waviness of the resin layer 30A is suppressed in the step of fixing the resin layer 30A to the support 40.

[0102] Also, (ii) the step of fixing the resin layer 30A to the support 40, (iii) the step of forming a plurality of openings 31 in the resin layer 30A, and (i) the step of removing the substrate 51 from the resin layer 30A may be performed in this order. This facilitates the step of fixing the resin layer 30A to the support 40, and also enables the step of forming the openings 31 to be stably performed.

[0103] It is also possible to combine the multiple components disclosed in the above embodiment and modified examples as necessary. Alternatively, some components may be deleted from all the components shown in the above embodiment and modified examples. [Explanation of symbols]

[0104] 10. Deposition mask device 30 Resin Mask 30A resin layer 30a 1st page 30b 2nd side 30c resin material 31 Opening 32 Effective Area 33 Surrounding Area 35 Resin materials 40 Support 40a Page 1 40b 2nd side 41 Through hole 42 Recess 43 Convex 44 Recess

Claims

1. a resin mask having a plurality of openings corresponding to a pattern to be formed by deposition; A support body joined to the resin mask, a recess is formed in a portion of the support body that is to be joined to the resin mask; A resin material that is a part of the resin mask is disposed in the recess, the support has an arithmetic mean height Sa of 0.001 μm or more and 0.1 μm or less of a portion bonded to the resin mask.

2. The deposition mask device according to claim 1 , wherein the resin material is the same as a material of the resin mask.

3. An evaporation mask device as described in claim 1 or 2, wherein the resin material and other parts of the resin mask are integrally formed, and no interface exists between the resin material and other parts of the resin mask.

4. Providing a support; fixing the resin layer to the support; forming a plurality of openings in the resin layer corresponding to a pattern to be formed by vapor deposition; a recess is formed in a portion of the support body that is to be joined to the resin layer, a resin material that is a part of the resin layer is disposed in the recess; the arithmetic mean height Sa of a portion of the support joined to the resin layer is 0.001 μm or more and 0.1 μm or less.

5. The method for manufacturing a deposition mask device according to claim 4 , wherein the step of fixing the resin layer to the support body includes a step of causing the resin material that is a part of the resin layer to flow into the recess.

6. The step of fixing the resin layer to the support includes: a first fixing step of fixing the resin layer and the support while applying tension to the resin layer; The method for manufacturing a deposition mask device according to claim 4 , further comprising: a second fixing step of fixing the resin layer and the support body in a state in which no tension is applied to the resin layer.

7. A method for manufacturing an organic electroluminescence display device, comprising the steps of: A method for manufacturing an organic electroluminescence display device, comprising a step of forming a deposition pattern on a deposition target by using the deposition mask device according to claim 1 .

8. A step of preparing a deposition mask apparatus according to any one of claims 1 to 3; preparing a deposition object; placing the deposition target on the deposition mask device; and depositing a deposition material onto the deposition target placed on the deposition mask device.

9. A method for manufacturing an organic electroluminescence display device, comprising the steps of: A method for manufacturing an organic electroluminescence display device, comprising: forming a deposition pattern on a deposition target by using the deposition mask device manufactured by the method for manufacturing a deposition mask device according to claim 4 .

10. preparing a deposition mask device manufactured by the method for manufacturing a deposition mask device according to any one of claims 4 to 6; preparing a deposition object; placing the deposition target on the deposition mask device; and depositing a deposition material onto the deposition target placed on the deposition mask device.

11. A method for manufacturing an organic semiconductor device, comprising the steps of: A method for manufacturing an organic semiconductor element, comprising a step of forming a deposition pattern on a deposition target by using the deposition mask device according to claim 1 .

12. A method for manufacturing an organic semiconductor device, comprising the steps of: A method for manufacturing an organic semiconductor element, comprising: forming a deposition pattern on a deposition target by using the deposition mask device manufactured by the method for manufacturing a deposition mask device according to claim 4 .

Images