Power Card

Abstract

To provide a power card which suppresses generation of a temperature difference among a plurality of switches.SOLUTION: A power card has a high-side switch, a low-side switch, a coating resin 600, and a connection terminal 500. The high-side switch and the low-side switch are aligned in a y direction, The switch and the partial connection terminal 500 are coated with the coating resin. The power card is provided in an opposite part 731 so as to be aligned in a z direction. The opposite part 731 has an internal space extending in an x direction. In the internal space, a coolant flows in the x direction.SELECTED DRAWING: Figure 17

Description

[Technical field]

[0001] The disclosure herein relates to a power card for a chiller. [Background technology]

[0002] As disclosed in Patent Document 1, a semiconductor module is known that has two IGBTs and a sealing resin body that covers the IGBTs. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-67813 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the configuration shown in Patent Document 1, there is a risk that a temperature difference will occur between the two IGBTs (switches).

[0005] An object of the present disclosure is to provide a power card in which the occurrence of temperature differences among multiple switches is suppressed. [Means for solving the problem]

[0006] According to one embodiment of the present disclosure, a power card is provided in a cooling section (730) in which a refrigerant flows in an internal space extending in a horizontal direction, the power cards being arranged in a vertical direction perpendicular to the horizontal direction, The semiconductor device has a first electrode (141a), a second electrode (141b), and a first control electrode (141c) for controlling the electrical conduction state between the first electrode and the second electrode. , two A first switch (141); The semiconductor device includes a third electrode (151a), a fourth electrode (151b), and a second control electrode (151c) for controlling the electrical conduction state between the third electrode and the fourth electrode. , two A second switch (151); Two A first conductive portion (471) connected to the first electrode; a third conductive portion (472) connected to the two third electrodes; and a first insulating plate (430) having a first inner surface (430e) mounted thereon; Two A second conductive portion (310, 441) connected to the second electrode; a second insulating plate (460) having a second inner surface (460e) on which a portion of each of fourth conductive parts (320, 442) connected to the two fourth electrodes is mounted; Connecting the second conductive part and the third conductive part , one A relay conductive portion (330); Two First switch, Two a resin portion (600) that covers the second switch, the first conductive portion, the second conductive portion, the third conductive portion, the fourth conductive portion, and the relay conductive portion; Two First switch and Two a plurality of external connection terminals (500) electrically connected to the second switches, each of which is partially exposed from the resin portion; the two first switches are electrically connected in parallel by a first conductive portion and a second conductive portion; the two second switches are electrically connected in parallel by the third conductive portion and the fourth conductive portion; two first switches connected in parallel and two second switches connected in parallel are electrically connected in series by one relay conductive portion; The two first switches are lined up horizontally, Two second switches are arranged horizontally, In the vertical direction perpendicular to the horizontal and vertical directions Two First switch and Two The second switch is next to one relay conductive portion is located between two first switches and two second switches in the vertical direction; One The relay conductive portion extends laterally rather than vertically, All lateral positions of one relay conductive part are between the lateral positions of the geometric centers of the two first switches; A vertical projection area of ​​one relay conductive portion is located on two of the first switches and the second conductive portion, and on two of the second switches and the fourth conductive portion, respectively.

[0007] According to this, the resin portion (600) is covered with First switch (141) and second switch (151) The occurrence of a difference in heat exchange efficiency between each of the components and the refrigerant is suppressed. First switch (141) and second switch (151) This suppresses the occurrence of temperature differences.

[0008] It should be noted that the reference numbers in parentheses above merely indicate the corresponding relationship with the configurations described in the embodiments described below, and do not in any way limit the technical scope. [Brief description of the drawings]

[0009] [Figure 1] FIG. 2 is a circuit diagram showing an in-vehicle system. [Diagram 2] FIG. [Diagram 3] FIG. [Figure 4] FIG. 2 is a side view of the power card. [Diagram 5] FIG. 2 is a plan view of a power card. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI shown in FIG. [Figure 7] FIG. 6 is a cross-sectional view taken along line VII-VII shown in FIG. [Figure 8] FIG. 4 is an inner view of the first conductive plate. [Figure 9] FIG. 4 is an inner view of the second conductive plate. [Figure 10] 11 is a plan view showing a state in which a semiconductor chip and solder are provided on a second conductive plate. FIG. [Figure 11] 13 is a plan view showing a state in which a terminal block and a connection terminal are provided on a second conductive plate. FIG. [Figure 12] FIG. 2 is a plan view showing a state in which the first conductive plate is provided on the second conductive plate. [Figure 13] FIG. 4 is a cross-sectional view for explaining a current path. [Figure 14] FIG. 4 is a cross-sectional view for explaining a current path. [Figure 15] FIG. 4 is a plan view for explaining a current path. [Figure 16] FIG. 4 is a perspective view for explaining a current path. [Figure 17] FIG. 2 is a perspective view showing a power module. [Figure 18] FIG. 2 is a plan view of the power module. [Figure 19] FIG. 2 is a side view of the power module. [Figure 20] FIG. 2 is a perspective view showing a state in which a phase bus bar, a P bus bar, and an N bus bar are connected to three semiconductor modules. [Figure 21]1 is a top view showing a state in which a phase bus bar, a P bus bar, and an N bus bar are connected to three semiconductor modules. FIG. [Figure 22] 1 is a side view showing a state in which a phase bus bar, a P bus bar, and an N bus bar are connected to a semiconductor module. [Figure 23] 1 is a side view showing a state in which a phase bus bar, a P bus bar, and an N bus bar are connected to a semiconductor module. [Figure 24] 13 is an external view showing a modified example of the first conductive plate. FIG. [Diagram 25] 13 is an external view showing a modified example of the second conductive plate. FIG. [Figure 26] FIG. 13 is a cross-sectional view showing a modified example of the power card. [Figure 27] FIG. 13 is a cross-sectional view showing a modified example of the power card. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, several embodiments for carrying out the present disclosure will be described with reference to the drawings. In each embodiment, the same reference numerals may be used to designate parts corresponding to matters described in the preceding embodiment, and duplicated descriptions may be omitted. In each embodiment, when only a part of the configuration is described, the other embodiment described previously may be applied to the other parts of the configuration.

[0011] It is possible to combine parts of each embodiment that are specifically indicated as being possible to combine with each other. In addition, even if it is not specifically indicated that the combination is possible, it is also possible to partially combine embodiments with each other, embodiments with variations, and variations with each other, as long as there is no particular problem with the combination.

[0012] (First embodiment) <In-vehicle systems> First, an in-vehicle system 10 will be described with reference to Fig. 1. The in-vehicle system 10 constitutes a system for an electric vehicle. The in-vehicle system 10 has a battery 20, a power conversion unit 30, and a motor 40.

[0013] The in-vehicle system 10 also has multiple ECUs (not shown). These multiple ECUs transmit and receive signals to each other via bus wiring. The multiple ECUs cooperate to control the electric vehicle. The power running and regeneration of the motor 40 are controlled according to the SOC of the battery 20 by the control of the multiple ECUs. SOC is an abbreviation for state of charge. ECU is an abbreviation for electronic control unit.

[0014] The battery 20 has a plurality of secondary batteries. These secondary batteries are connected in series to form a battery stack. The SOC of this battery stack corresponds to the SOC of the battery 20. As the secondary batteries, lithium ion secondary batteries, nickel hydride secondary batteries, organic radical batteries, etc. can be used.

[0015] The power conversion device 50 included in the power conversion unit 30 performs power conversion between the battery 20 and the motor 40. The power conversion device 50 converts DC power of the battery 20 into AC power. The power conversion device 50 converts AC power generated by power generation (regeneration) of the motor 40 into DC power.

[0016] The motor 40 is connected to an axle of an electric vehicle (not shown). The rotational energy of the motor 40 is transmitted to the running wheels of the electric vehicle via the axle. Conversely, the rotational energy of the running wheels is transmitted to the motor 40 via the axle. In the drawings, the motor 40 is represented as MG.

[0017] The motor 40 is powered by AC power supplied from the power conversion device 50. This provides a propulsive force to the running wheels. The motor 40 also regenerates power using the rotational energy transmitted from the running wheels. The AC power generated by this regeneration is converted into DC power by the power conversion device 50. This DC power is supplied to the battery 20. This DC power is also supplied to various electrical loads mounted on the electric vehicle.

[0018] <Power conversion device> Next, the power conversion device 50 will be described. The power conversion device 50 includes an inverter. The inverter converts DC power from the battery 20 into AC power. This AC power is supplied to the motor 40. The inverter also converts AC power generated by the motor 40 into DC power. This DC power is supplied to the battery 20 and various electrical loads.

[0019] 1, the power conversion device 50 includes a P bus bar 101 and an N bus bar 102. A battery 20 is connected to the P bus bar 101 and the N bus bar 102. The P bus bar 101 is connected to the positive electrode of the battery 20. The N bus bar 102 is connected to the negative electrode of the battery 20.

[0020] The power conversion device 50 also includes a U-phase bus bar 103, a V-phase bus bar 104, and a W-phase bus bar 105. The motor 40 is connected to these three phase bus bars. In Fig. 1, the connection points of conductive members such as these various bus bars are indicated by white circles. These connection points are electrically connected by, for example, bolts or welding.

[0021] The power conversion device 50 includes a smoothing capacitor 110, a power card 120, and a control board .

[0022] The smoothing capacitor 110 has two electrodes. One of the two electrodes is connected to a P bus bar 101. The other of the two electrodes is connected to an N bus bar 102.

[0023] The power card 120 includes a U-phase semiconductor module 121 to a W-phase semiconductor module 123. Each of the U-phase semiconductor module 121 to W-phase semiconductor module 123 has a high-side switch 141 and a high-side diode 142. In addition, each of these three semiconductor modules has a low-side switch 151 and a low-side diode 152.

[0024] The U-phase semiconductor module 121 to the W-phase semiconductor module 123 have the same configuration. Of these three semiconductor modules, only the U-phase semiconductor module 121 is shown in detail in FIG.

[0025] In this embodiment, n-channel MOSFETs are used as the high-side switch 141 and the low-side switch 151.

[0026] The cathode of the high-side diode 142 is connected to the drain 141a of the high-side switch 141. The anode of the high-side diode 142 is connected to the source 141b of the high-side switch 141. As a result, the high-side diode 142 is connected in inverse parallel to the high-side switch 141. The drain 141a and source 141b of the high-side switch 141 correspond to a first electrode and a second electrode.

[0027] The cathode of the low-side diode 152 is connected to the drain 151a of the low-side switch 151. The anode of the low-side diode 152 is connected to the source 151b of the low-side switch 151. This connects the low-side diode 152 in inverse parallel to the low-side switch 151. The drain 151a and source 151b of the low-side switch 151 correspond to a third electrode and a fourth electrode.

[0028] Each of the U-phase to W-phase semiconductor modules 121 to 123 of this embodiment has two high-side switches 141 and two low-side switches 151. Also, each of the U-phase to W-phase semiconductor modules 121 to 123 has two high-side diodes 142 and two low-side diodes 152.

[0029] The drains 141a of the two high-side switches 141 are connected to each other, and the sources 141b are connected to each other, so that the two high-side switches 141 are connected in parallel.

[0030] The drains 151a of the two low-side switches 151 are connected to each other, and the sources 151b are connected to each other, so that the two low-side switches 151 are connected in parallel.

[0031] The sources 141b of the two high-side switches 141 connected in parallel are connected to the drains 151a of the two low-side switches 151 connected in parallel. As a result, the two high-side switches 141 connected in parallel and the two low-side switches 151 connected in parallel are connected in series.

[0032] 1, the drains 141a of the two high-side switches 141 connected in parallel are connected to the P bus bar 101. The sources 151b of the two low-side switches 151 connected in parallel are connected to the N bus bar 102. As a result, the two high-side switches 141 connected in parallel and the two low-side switches 151 connected in parallel are connected in series in that order from the P bus bar 101 to the N bus bar 102.

[0033] A midpoint between high-side switch 141 and low-side switch 151 included in U-phase semiconductor module 121 is connected to the U-phase stator coil of motor 40 via U-phase bus bar 103. A midpoint between high-side switch 141 and low-side switch 151 included in V-phase semiconductor module 122 is connected to the V-phase stator coil via V-phase bus bar 104. A midpoint between high-side switch 141 and low-side switch 151 included in W-phase semiconductor module 123 is connected to the W-phase stator coil via W-phase bus bar 105. In this way, battery 20 and motor 40 are connected via the three-phase semiconductor modules.

[0034] Gate 141c of high-side switch 141 and gate 151c of low-side switch 151 included in each of U-phase semiconductor module 121 to W-phase semiconductor module 123 are connected to control board 130. This connects the three-phase semiconductor modules to control board 130. Gate 141c of high-side switch 141 corresponds to a first control electrode. Gate 151c of low-side switch 151 corresponds to a second control electrode.

[0035] Furthermore, each of the U-phase semiconductor module 121 to the W-phase semiconductor module 123 has a temperature sensor 160. This temperature sensor 160 is also connected to the control board .

[0036] The control board 130 includes a gate driver. One of the multiple ECUs is included in the control board 130 or another board. In the drawings, the control board 130 is indicated as CB.

[0037] An ECU electrically connected to the gate driver generates a control signal for controlling the high-side switch 141 and the low-side switch 151 to a conducting state or a cut-off state. The ECU generates a pulse signal as the control signal. The ECU adjusts the on-duty ratio and frequency of this pulse signal. The on-duty ratio and frequency are determined based on the outputs of a current sensor and a rotation angle sensor (not shown), the target torque of the motor 40, the SOC of the battery 20, etc.

[0038] The control signal generated by the ECU is amplified by the gate driver. This amplified control signal is input to the gate 141c of the high-side switch 141 and the gate 151c of the low-side switch 151.

[0039] When the motor 40 is powered, the ECU performs PWM control of the switches of the three-phase semiconductor modules using control signals, thereby causing the power conversion device 50 to generate a three-phase AC current.

[0040] When the motor 40 generates power (regenerates electricity), the ECU, for example, stops outputting a control signal. This causes AC power generated by the power generation to pass through diodes provided in the three-phase semiconductor module. As a result, the AC power is converted into DC power.

[0041] <Power Card> Next, a description will be given of the configuration of the power card 120. That is, the configurations of the U-phase semiconductor module 121 to the W-phase semiconductor module 123 will be described.

[0042] In the following, the three mutually orthogonal directions are referred to as the x-direction, y-direction, and z-direction. In the drawings, the description of "direction" is omitted, and the directions are simply written as x, y, and z. The x-direction corresponds to the horizontal direction. The y-direction corresponds to the vertical direction. The z-direction corresponds to the height direction.

[0043] 2, the power card 120 has a semiconductor chip 200, a terminal block 300, a conductive plate 400, and a connection terminal 500. The power card 120 has a coating resin 600 as shown in FIGS.

[0044] The semiconductor chip 200 has semiconductor elements such as the switches and diodes described above formed thereon. The terminal block 300 and the conductive plate 400 function to electrically connect the semiconductor elements. The connection terminals 500 function to electrically connect the semiconductor elements to the various bus bars and the control board 130. The coating resin 600 functions to cover and protect the semiconductor chip 200, the terminal block 300, the conductive plate 400, and the connection terminals 500, and to integrally connect them together. The connection terminals 500 correspond to external connection terminals. The coating resin 600 corresponds to the resin portion.

[0045] <Semiconductor chip> The semiconductor chip 200 has a first semiconductor chip 210 and a second semiconductor chip 220. The first semiconductor chip 210 and the second semiconductor chip 220 are formed of a semiconductor such as Si or a wide-gap semiconductor such as SiC. The materials forming the first semiconductor chip 210 and the second semiconductor chip 220 may be the same or different.

[0046] A high-side switch 141 and a high-side diode 142 are formed on the first semiconductor chip 210. The high-side diode 142 may be a parasitic diode of the high-side switch 141, or may be a separate diode.

[0047] A low-side switch 151 and a low-side diode 152 are formed on the second semiconductor chip 220. The low-side diode 152 may be a parasitic diode of the low-side switch 151, or may be a separate diode.

[0048] As shown in Figures 6 and 7, the first semiconductor chip 210 and the second semiconductor chip 220 each have a flat plate shape with a thin thickness in the z direction. The first semiconductor chip 210 and the second semiconductor chip 220 each have a front surface 200a and a back surface 200b aligned in the z direction. As shown in Figure 2, a source electrode 201 is formed on the front surface 200a. Although not shown, a drain electrode is formed on the back surface 200b. In addition, a gate electrode 203 and a sensor electrode 204 are formed on the front surface 200a.

[0049] The back surface 200b of the first semiconductor chip 210 corresponds to the first main surface. The front surface 200a of the first semiconductor chip 210 corresponds to the second main surface. The back surface 200b of the second semiconductor chip 220 corresponds to the third main surface. The front surface 200a of the second semiconductor chip 220 corresponds to the fourth main surface.

[0050] In this embodiment, the sensor electrode 204 is formed only on the second semiconductor chip 220 out of the first semiconductor chip 210 and the second semiconductor chip 220. The temperature sensor 160 is formed on the second semiconductor chip 220.

[0051] The high-side switch 141 and the high-side diode 142 have a vertical structure in which a current flows between the source electrode 201 and the drain electrode of the first semiconductor chip 210. The low-side switch 151 and the low-side diode 152 have a vertical structure in which a current flows between the source electrode 201 and the drain electrode of the second semiconductor chip 220.

[0052] The semiconductor chip 200 has two first semiconductor chips 210 and two second semiconductor chips 220. A terminal block 300 and a conductive plate 400 are electrically connected to each of the two first semiconductor chips 210 and the two second semiconductor chips 220.

[0053] <Terminal block> The terminal block 300 includes a first terminal block 310, a second terminal block 320, and a third terminal block 330.

[0054] The first terminal block 310, the second terminal block 320, and the third terminal block 330 each have a rectangular parallelepiped shape. The shape of a plane perpendicular to the z direction of these three blocks is rectangular. The first terminal block 310 and the second terminal block 320 have shapes with no significant difference in length between the x direction and the y direction. The third terminal block 330 has a shape that extends further in the x direction than in the y direction.

[0055] Each of the first terminal block 310, the second terminal block 320, and the third terminal block 330 has a flat shape with a small thickness in the z direction. As shown in Figures 6 and 7, these three blocks have a first end surface 300a and a second end surface 300b aligned in the z direction.

[0056] The terminal block 300 has two first terminal blocks 310. The second end faces 300b of the two first terminal blocks 310 are individually connected to the two first semiconductor chips 210. The first end faces 300a of the two first terminal blocks 310 are connected to a first conductive plate 410 described below.

[0057] The terminal block 300 has two second terminal blocks 320. The second end faces 300b of the two second terminal blocks 320 are respectively connected to the two second semiconductor chips 220. The first end faces 300a of the two second terminal blocks 320 are connected to the first conductive plate 410.

[0058] The terminal block 300 has one third terminal block 330. A second end surface 300b side of the third terminal block 330 is connected to a second conductive plate 420 described below. A first end surface 300a side of the third terminal block 330 is connected to a first conductive plate 410.

[0059] <Conductive plate> The conductive plate 400 includes a first conductive plate 410 and a second conductive plate 420 .

[0060] Each of the first conductive plate 410 and the second conductive plate 420 has a flat shape with a small thickness in the z direction. The first conductive plate 410 and the second conductive plate 420 are spaced apart in the z direction. The semiconductor chip 200 and the terminal block 300 are provided between these two plates.

[0061] <First conductive plate> As shown in Figs. 6 to 8, the first conductive plate 410 has a first insulating plate 430, a first current-carrying portion 440, and a first heat dissipation portion 450. The first insulating plate 430 is formed from a material such as resin or ceramic. The first current-carrying portion 440 and the first heat dissipation portion 450 are formed from a conductive metal material such as copper. In this embodiment, the first current-carrying portion 440 and the first heat dissipation portion 450 are formed from the same material. Note that the material forming the first heat dissipation portion 450 does not need to be conductive.

[0062] The first insulating plate 430 has a flat plate shape with a small thickness in the z direction. The first insulating plate 430 has a first left side surface 430a and a first right side surface 430b aligned in the x direction, a first upper side surface 430c and a first lower side surface 430d aligned in the y direction, and a first inner surface 430e and a first outer surface 430f aligned in the z direction.

[0063] A first current-carrying portion 440 is provided on the first inner surface 430e. A first heat dissipation portion 450 is provided on the first outer surface 430f.

[0064] 8, first current conducting portion 440 has first upper current conducting portion 441 and first lower current conducting portion 442. First upper current conducting portion 441 and first lower current conducting portion 442 have different shapes in a plane perpendicular to the z direction.

[0065] The first upper current-carrying portion 441 has a rectangular shape that is longer in the x direction than in the y direction. The first upper current-carrying portion 441 is located on the first upper surface 430c side in the y direction.

[0066] The first lower electric current portion 442 has a base portion 443, a first folded portion 444, and a second folded portion 445. The base portion 443 has a rectangular shape that is longer in the x direction than in the y direction. The length of the base portion 443 in the y direction is shorter than that of the first upper electric current portion 441. The base portion 443 is located on the first lower side surface 430d side in the y direction. The base portion 443 and the first upper electric current portion 441 are arranged side by side and spaced apart in the y direction.

[0067] The first folded portion 444 is integrally connected to the end portion on the first left side surface 430a side of the two ends spaced apart from each other in the x direction of the base portion 443. The first folded portion 444 extends in the y direction from the base portion 443 toward the first upper surface 430c side.

[0068] The second folded portion 445 is integrally connected to the end portion on the first right side surface 430b side of the two ends spaced apart from each other in the x direction of the base portion 443. The second folded portion 445 extends in the y direction from the base portion 443 toward the first upper surface 430c side.

[0069] The first folded portion 444 and the second folded portion 445 are arranged side by side and spaced apart in the x-direction. The first upper conductive portion 441 is located between the first folded portion 444 and the second folded portion 445.

[0070] The first heat dissipation portion 450 is aligned in the z direction with the first current conducting portion 440. The first heat dissipation portion 450 has the same shape in a plane perpendicular to the z direction as the first current conducting portion 440. Therefore, a description thereof will be omitted.

[0071] <Second conductive plate> 6, 7, and 9, the second conductive plate 420 has a second insulating plate 460, a second current-carrying portion 470, and a second heat dissipation portion 480. The second insulating plate 460 is formed from a material such as resin or ceramic. The second current-carrying portion 470 and the second heat dissipation portion 480 are formed from a metal material having electrical conductivity, such as copper. The material from which the second heat dissipation portion 480 is formed does not have to be electrically conductive.

[0072] In this embodiment, the first insulating plate 430 and the second insulating plate 460 are made of the same material. The first current conducting portion 440 and the second current conducting portion 470 are made of the same material. The first heat dissipation portion 450 and the second heat dissipation portion 480 are made of the same material.

[0073] The second insulating plate 460 has a flat plate shape with a small thickness in the z direction. The second insulating plate 460 has a second left side surface 460a and a second right side surface 460b aligned in the x direction, a second upper side surface 460c and a second lower side surface 460d aligned in the y direction, and a second inner surface 460e and a second outer surface 460f aligned in the z direction.

[0074] A second current-carrying portion 470 is provided on the second inner surface 460e. A second heat dissipation portion 480 is provided on the second outer surface 460f.

[0075] 9, the second electric current conducting portion 470 has a second upper electric current conducting portion 471 and a second lower electric current conducting portion 472. The shape of the second upper electric current conducting portion 471 and the second lower electric current conducting portion 472 in a plane perpendicular to the z direction is a rectangle that is longer in the x direction than in the y direction. The second lower electric current conducting portion 472 is longer in the y direction than the second upper electric current conducting portion 471.

[0076] The second upper current-carrying portion 471 is located on the second upper side surface 460c side. The second lower current-carrying portion 472 is located on the second lower side surface 460d side. The second upper current-carrying portion 471 and the second lower current-carrying portion 472 are arranged side by side and spaced apart in the y direction.

[0077] Second heat dissipation portion 480 is aligned in the z direction with second current conducting portion 470. Second heat dissipation portion 480 has the same shape in a plane perpendicular to the z direction as second current conducting portion 470. Therefore, a description thereof will be omitted.

[0078] <Connection terminal> 2, the connection terminal 500 has a drain terminal 510, a source terminal 520, a midpoint terminal 530, a gate terminal 540, and a sensor terminal 550. These terminals are manufactured by pressing a conductive metal material such as copper. The drain terminal 510 corresponds to a positive terminal. The source terminal 520 corresponds to a negative terminal.

[0079] The drain terminal 510, the source terminal 520, and the midpoint terminal 530 each extend in the y direction. However, in this embodiment, a part of the source terminal 520 is bent. Due to this bending, the positions in the z direction of two ends located at both ends of the extension direction of the source terminal 520 are different. Conversely, a configuration can be adopted in which the positions in the z direction of two ends located at both ends of the extension direction of these terminals are different by bending a part of each of the drain terminal 510 and the midpoint terminal 530.

[0080] The gate terminal 540 and the sensor terminal 550 each extend in the y direction, and are bent to extend in the z direction.

[0081] In this embodiment, the connection terminal 500 has two drain terminals 510, two source terminals 520, and two midpoint terminals 530. The connection terminal 500 has four gate terminals 540 and two sensor terminals 550.

[0082] 2, the various terminals described above are arranged in the y direction on the second upper side 460c side and the second lower side 460d side of the second insulating plate 460. Two drain terminals 510, two source terminals 520, and two gate terminals 540 are arranged on the second upper side 460c side. Two midpoint terminals 530, two gate terminals 540, and two sensor terminals 550 are arranged on the second lower side 460d side.

[0083] For ease of notation, the gate terminal 540 arranged on the second upper side surface 460c side will be referred to as a first gate terminal 541. The gate terminal 540 arranged on the second lower side surface 460d side will be referred to as a second gate terminal 542. The first gate terminal 541 corresponds to the first control terminal. The second gate terminal 542 corresponds to the second control terminal.

[0084] <Distribution arrangement> 5 and 12, a reference plane BS that passes through the center of the semiconductor module and is perpendicular to the x-direction is indicated by a two-dot chain line. The various terminals are evenly distributed and arranged in a first distribution space and a second distribution space that are separated by this reference plane BS. The various terminals are also arranged symmetrically with respect to the reference plane BS.

[0085] On the second upper side surface 460c side, the drain terminals 510, the source terminals 520, and the first gate terminals 541 are distributed to the first distribution space and the second distribution space, one by one. These six terminals are arranged in a line at a distance in the x direction.

[0086] A source terminal 520 is located at each end of these six terminals spaced apart in the x-direction. Two drain terminals 510 and two first gate terminals 541 are located between these two source terminals 520. Two first gate terminals 541 are located between the two drain terminals 510.

[0087] On the second lower side surface 460d side, the midpoint terminals 530, the second gate terminals 542, and the sensor terminals 550 are distributed to the first distribution space and the second distribution space, one by one. These six terminals are arranged in a line at a distance in the x direction.

[0088] A midpoint terminal 530 is located at each end of these six terminals spaced apart in the x-direction. Two sensor terminals 550 and two second gate terminals 542 are located between these two midpoint terminals 530. Two second gate terminals 542 are located between the two sensor terminals 550.

[0089] It is also possible to adopt a configuration in which the two second gate terminals 542 arranged adjacent to each other in the x direction and the two sensor terminals 550 arranged adjacent to each other in the x direction are arranged adjacent to each other in the x direction. It is also possible to adopt a configuration in which the second gate terminals 542 and the sensor terminals 550 are arranged adjacent to each other alternately in the x direction.

[0090] <Connection form> 6 and 7, the first conductive plate 410 and the second conductive plate 420 are disposed apart in the z direction with the first inner surface 430e and the second inner surface 460e facing each other in the z direction. The first semiconductor chip 210 and the second semiconductor chip 220 are provided between the first current-carrying portion 440 formed on the first inner surface 430e and the second current-carrying portion 470 formed on the second inner surface 460e. Additionally, the first terminal block 310, the second terminal block 320, and the third terminal block 330 are provided between these two conductive portions.

[0091] Between these two conductive parts, ends of two drain terminals 510 and two source terminals 520 are provided. Two first gate terminals 541, two second gate terminals 542, two midpoint terminals 530, and two sensor terminals 550 are provided outside between the two conductive parts.

[0092] 10, two first semiconductor chips 210 are provided on the second upper conductive portion 471 of the second conductive plate 420. These two first semiconductor chips 210 are arranged side by side and spaced apart in the x direction. The gate electrode 203 is provided on the second upper side surface 460c side in the y direction.

[0093] 2 in a sheet shape. This connects the drains 141a of the high-side switches 141 of the two first semiconductor chips 210 to each other. The second upper conductive portion 471 corresponds to the first conductive portion.

[0094] Two second semiconductor chips 220 are provided on the second lower current-carrying portion 472 of the second conductive plate 420. These two second semiconductor chips 220 are arranged side by side and spaced apart in the x direction. The gate electrode 203 and the sensor electrode 204 are provided on the second lower side surface 460d side in the y direction.

[0095] With the above-described arrangement, the first semiconductor chip 210 and the second semiconductor chip 220 are arranged side by side with a gap in the y direction. The second semiconductor chip 220 located on the second left side surface 460a side in the x direction and the first semiconductor chip 210 located on the second left side surface 460a side are arranged to face each other in the y direction. The second semiconductor chip 220 located on the second right side surface 460b side in the x direction and the first semiconductor chip 210 located on the second right side surface 460b side are arranged to face each other in the y direction. The positions in the x direction of the first semiconductor chip 210 and the second semiconductor chip 220 arranged to face each other in the y direction are equal.

[0096] 2 in a sheet shape. This connects the drains of the low-side switches 151 of the two second semiconductor chips 220 to each other. The second lower conductive portion 472 corresponds to the third conductive portion.

[0097] 10, solder 170 is provided on each of source electrodes 201 of first semiconductor chip 210 and second semiconductor chip 220 mounted on second conductive plate 420. Solder 170 is also provided at two locations spaced apart in the x direction on the second upper side surface 460c side of second upper current conducting portion 471. Solder 170 is provided at two locations spaced apart in the x direction on the second upper side surface 460c side of second lower current conducting portion 472. Solder 170 is provided at one location on the second lower side surface 460d side of second lower current conducting portion 472.

[0098] 11, the second end faces 300b of the two first terminal blocks 310 are individually provided on the solder 170 provided on the source electrodes 201 of the two first semiconductor chips 210. In this way, the first semiconductor chips 210 and the first terminal blocks 310 are electrically connected to each other.

[0099] The second end faces 300b of the two second terminal blocks 320 are individually provided on the solder 170 provided on the source electrodes 201 of the two second semiconductor chips 220. In this way, the second semiconductor chips 220 and the second terminal blocks 320 are electrically connected to each other.

[0100] Then, ends of two drain terminals 510 are individually provided on two solders 170 provided on the second upper surface 460c side of the second upper current-carrying portion 471. In this way, the two drain terminals 510 are electrically connected to the second upper current-carrying portion 471.

[0101] The second end face 300b side of the third terminal block 330 is provided on the solder 170 provided on the second upper side surface 460c side of the second lower current-carrying portion 472. In this way, the third terminal block 330 is electrically connected to the second lower current-carrying portion 472.

[0102] Ends of two midpoint terminals 530 are individually provided on two solders 170 provided on the second lower surface 460d side of the second lower current-carrying portion 472. In this way, the two midpoint terminals 530 are electrically connected to the second lower current-carrying portion 472.

[0103] 11, two first gate terminals 541 are provided on the second upper side surface 460c side. Ends of these two first gate terminals 541 are individually connected to the gate electrodes 203 of the two first semiconductor chips 210 via wires (not shown).

[0104] Two second gate terminals 542 and two sensor terminals 550 are provided on the second lower side surface 460d side. Ends of these two second gate terminals 542 are individually connected to the gate electrodes 203 of the two second semiconductor chips 220 via wires not shown. Ends of the two sensor terminals 550 are individually connected to the sensor electrodes 204 of the two second semiconductor chips 220 via wires not shown. Alternatively, ends of the two sensor terminals 550 are connected to one of the sensor electrodes 204 of the two second semiconductor chips 220 via wires not shown.

[0105] Solder 170 is provided on the first end surface 300a of each of the first terminal block 310, the second terminal block 320, and the third terminal block 330. Additionally, solder 170 is provided on the end of the source terminal 520 as shown in FIG.

[0106] 12, a first conductive plate 410 is provided above the second conductive plate 420. In this manner, a first upper conductive portion 441 of the first conductive plate 410 is connected to the solder 170 provided on the first end surface 300a of the first terminal block 310. This connects the sources 141b of the high-side switches 141 of the two first semiconductor chips 210 to each other. The first terminal block 310 and the first upper conductive portion 441 correspond to a second conductive portion.

[0107] Also, the first upper conductive portion 441 is connected to the solder 170 provided on the first end surface 300a of the third terminal block 330. This electrically connects the first upper conductive portion 441 and the second lower conductive portion 472 via the third terminal block 330. The third terminal block 330 corresponds to the relay conductive portion.

[0108] Furthermore, the base 443 of the first lower conductive part 442 is connected to the solder 170 provided on the first end surface 300a of the second terminal block 320. At the same time, the first folded part 444 and the second folded part 445 extending from the base 443 are connected to the solder 170 provided on the ends of the two source terminals 520. This connects the sources 151b of the low-side switches 151 of the two second semiconductor chips 220 to each other. At the same time, the source 151b of the second semiconductor chip 220 is electrically connected to the source terminal 520. The second terminal block 320 and the first lower conductive part 442 correspond to a fourth conductive part.

[0109] <Electrical path> 13 to 16. The drain terminal 510 and the third terminal block 330 are electrically connected via the second upper current conducting portion 471, the two first semiconductor chips 210, and the first upper current conducting portion 441. The third terminal block 330 and the source terminal 520 are electrically connected via the second lower current conducting portion 472, the two second semiconductor chips 220, the second terminal block 320, and the first lower current conducting portion 442. The third terminal block 330 and the midpoint terminal 530 are electrically connected via the second lower current conducting portion 472.

[0110] 13, the conducting and blocking states of the high-side switch 141 and the low-side switch 151 are controlled so that a current flows from the drain terminal 510 to the midpoint terminal 530. In this case, the current flows in the y direction from the drain terminal 510 to the midpoint terminal 530 via the second upper conducting part 471, the first upper conducting part 441, and the second lower conducting part 472.

[0111] 14, the conductive and cut-off states of high-side switch 141 and low-side switch 151 are controlled so that a current flows from midpoint terminal 530 to source terminal 520. In this case, the current flows in the y direction from midpoint terminal 530 to source terminal 520 via second lower conductive part 472 and first lower conductive part 442.

[0112] As shown in FIGS. 15 and 16, the direction of current flow from the drain terminal 510 to the midpoint terminal 530 and the direction of current flow from the midpoint terminal 530 to the source terminal 520 are opposite to each other in the y direction.

[0113] A current flowing from the drain terminal 510 to the midpoint terminal 530 flows through the first upper current portion 441. A current flowing from the midpoint terminal 530 to the source terminal 520 flows through the first folded portion 444 and the second folded portion 445 of the first lower current portion 442. As described above, the first upper current portion 441 is located between the first folded portion 444 and the second folded portion 445 in the x-direction.

[0114] In this manner, first upper conductive part 441 and first folded part 444, through which current flows in opposite directions, are arranged adjacent to each other in the x direction. First upper conductive part 441 and second folded part 445, through which current flows in opposite directions, are arranged adjacent to each other in the x direction.

[0115] The current flowing from the drain terminal 510 to the midpoint terminal 530 flows individually through the two drain terminals 510 and the two first semiconductor chips 210 aligned in the x direction. These two current paths flowing in the same direction in the y direction are adjacent to each other in the x direction.

[0116] A current flowing from the drain terminal 510 to the midpoint terminal 530 naturally flows through the drain terminal 510. A current flowing from the midpoint terminal 530 to the source terminal 520 naturally flows through the source terminal 520. The drain terminal 510 and the source terminal 520, through which currents flow in opposite directions, are arranged next to each other in the x direction.

[0117] Second upper conductive part 471 to which drain terminal 510 is connected, and first folded part 444 and second folded part 445 to which source terminal 520 is connected are aligned in the z direction. Second upper conductive part 471 and first folded part 444, through which currents flow in opposite directions, are aligned in the z direction. Second upper conductive part 471 and second folded part 445, through which currents flow in opposite directions, are aligned in the z direction.

[0118] In Fig. 13 to Fig. 16, the symbols are omitted as appropriate to clearly indicate the current paths indicated by the arrows. Fig. 13 corresponds to the cross-sectional view shown in Fig. 6. Fig. 14 corresponds to the cross-sectional view shown in Fig. 7. Fig. 15 shows the overlapping areas in the top view shown in Fig. 12 with dashed lines. Fig. 15 omits the illustration of first heat dissipation section 450. Fig. 15 also shows the current paths on the second conductive plate 420 side with dashed lines, and the current paths on the first conductive plate 410 side with solid lines. Fig. 16 shows the internal structure of power card 120 in a see-through manner.

[0119] <Switch control> Switch control is not performed so that a current flows from the drain terminal 510 to the source terminal 520 between the first semiconductor chip 210 and the second semiconductor chip 220 of the same phase that are electrically connected in series. The high-side switch 141 and the low-side switch 151 of the same phase are not controlled to be in a conducting state at the same time.

[0120] In practice, at least one of the high-side switch 141 and the low-side switch 151 is controlled to be in a cut-off state. By carrying out such control, as described above, a current flows from the drain terminal 510 to the midpoint terminal 530. A current flows from the midpoint terminal 530 to the source terminal 520.

[0121] When the high-side switch 141 is controlled to be in a conducting state and the low-side switch 151 is controlled to be in a cut-off state, a current flows between the drain terminal 510 and the midpoint terminal 530. When the source terminal 520 has a higher potential than the midpoint terminal 530 due to an electromotive force generated by the motor 40 or the like, a current flows from the source terminal 520 to the midpoint terminal 530 via the low-side diode 152. When the source terminal 520 has a lower potential than the midpoint terminal 530, no current flows to the source terminal 520.

[0122] When the high-side switch 141 is controlled to be in a cut-off state and the low-side switch 151 is controlled to be in a conducting state, a current flows between the midpoint terminal 530 and the source terminal 520. When the midpoint terminal 530 has a higher potential than the drain terminal 510 due to an electromotive force generated by the motor 40 or the like, a current flows from the midpoint terminal 530 to the drain terminal 510 via the high-side diode 142. When the midpoint terminal 530 has a higher potential than the drain terminal 510, no current flows to the drain terminal 510.

[0123] When the high-side switch 141 is in an OFF state and the low-side switch 151 is in an OFF state, a current flows through at least one of the high-side diode 142 and the low-side diode 152. When the current flows through the high-side diode 142, the current flows from the midpoint terminal 530 to the drain terminal 510. When the current flows through the low-side diode 152, the current flows from the source terminal 520 to the midpoint terminal 530. When the current flows through both the high-side diode 142 and the low-side diode 152, the current flows from the source terminal 520 to each of the midpoint terminal 530 and the drain terminal 510.

[0124] <Overlap of folded parts> Second upper current conducting portion 471 has a length in the x direction longer than first upper current conducting portion 441. Both ends in the x direction of second upper current conducting portion 471 do not overlap with first upper current conducting portion 441 in the z direction. The non-overlapping region of second upper current conducting portion 471 with first upper current conducting portion 441 is also a non-connection region of second upper current conducting portion 471 between drain terminal 510 and first semiconductor chip 210.

[0125] As described above, the first upper conductive part 441 is located between the first folded part 444 and the second folded part 445 in the x direction. The end of the second upper conductive part 471 on the second left side surface 460a side among both ends in the x direction overlaps with a part of the first folded part 444 in the z direction. The end of the second upper conductive part 471 on the second right side surface 460b side among both ends in the x direction overlaps with a part of the second folded part 445 in the z direction. In other words, a part of the projection area of ​​each of the first folded part 444 and the second folded part 445 in the z direction is located in the non-overlapping area of ​​the second upper conductive part 471 with the first upper conductive part 441. In FIG. 15, the area where the projection area and the non-overlapping area overlap in the z direction is surrounded by a two-dot chain line and is indicated by oblique hatching as an overlapping area OA. An end of the source terminal 520 is located in this overlapping area OA. An end of the source terminal 520 is located between the second conductive plate 420 and the first conductive plate 410 in the z-direction.

[0126] <Extension of the 3rd terminal block> As described above, the third terminal block 330 has a shape that extends in the x direction. Parts of the projection area of ​​the third terminal block 330 in the y direction are located on each of the two first semiconductor chips 210 and the two first terminal blocks 310. Parts of the projection area of ​​the third terminal block 330 in the y direction are located on each of the two second semiconductor chips 220 and the two second terminal blocks 320.

[0127] More specifically, a part of a projection area in the y direction of the connection part of the third terminal block 330 with the first upper current conducting part 441 is located at each of the connection parts of the two first terminal blocks 310 with the first upper current conducting part 441. A part of a projection area in the y direction of the connection part of the third terminal block 330 with the second lower current conducting part 472 is located at each of the connection parts of the drain electrodes of the two second semiconductor chips 220 with the second lower current conducting part 472.

[0128] This prevents the extension of the conductive path length between the two first terminal blocks 310 and the one third terminal block 330 in the first upper conductive portion 441. This prevents the extension of the conductive path length between the one third terminal block 330 and the two second semiconductor chips 220 in the second lower conductive portion 472.

[0129] <Bending of terminals> As described above, the drain terminal 510 is connected to the second upper conductive portion 471 of the second conductive plate 420. The midpoint terminal 530 is connected to the second lower conductive portion 472 of the second conductive plate 420. The midpoint terminal 530 is connected to the first lower conductive portion 442 of the first conductive plate 410.

[0130] Because the conductive plates connected in this manner are different, the z-direction positions of the ends of the drain terminal 510 and the midpoint terminal 530 connected to the second conductive plate 420 are different from the end of the source terminal 520 connected to the first conductive plate 410.

[0131] In contrast, as described above, a portion of the source terminal 520 is bent, so that the end of the source terminal 520 connected to the first conductive plate 410 differs from the position of the tip side thereof in the z direction.

[0132] 6 and 7, the tip side of the source terminal 520 is located on the second conductive plate 420 side in the z direction. The distance in the z direction between the tip side of the source terminal 520 and the first conductive plate 410 is equal to the distance in the z direction between the first conductive plate 410 and the second conductive plate 420. As a result, the positions of the tip sides of the drain terminal 510 and the midpoint terminal 530 in the z direction are equal to each other.

[0133] <Coating resin> The coating resin 600 is made of, for example, an epoxy resin, and is formed by, for example, a transfer molding method.

[0134] 3 to 5, coating resin 600 has a flat shape with a small thickness in the z direction. Coating resin 600 has a rectangular parallelepiped shape with six sides. Coating resin 600 has left surface 600a and right surface 600b spaced apart from each other in the x direction, top surface 600c and bottom surface 600d spaced apart from each other in the y direction, and first heat dissipation surface 600e and second heat dissipation surface 600f spaced apart from each other in the z direction.

[0135] As described above, the coating resin 600 covers the semiconductor chip 200, the terminal block 300, the conductive plate 400, and the connection terminals 500.

[0136] 6 and 7, the first semiconductor chip 210 and the first terminal block 310 are located on the upper surface 600c side in the y direction. The second semiconductor chip 220 and the second terminal block 320 are located on the lower surface 600d side in the y direction. The third terminal block 330 is located between them in the y direction. The high-side switch 141 corresponds to the first switch. The low-side switch 151 corresponds to the second switch.

[0137] The first conductive plate 410 is located on the first heat dissipation surface 600e side in the z direction. The second conductive plate 420 is located on the second heat dissipation surface 600f side in the z direction. The first inner surface 430e side of the first conductive plate 410 is covered with the coating resin 600. The second inner surface 460e side of the second conductive plate 420 is covered with the coating resin 600. The first semiconductor chip 210 and the second semiconductor chip 220 provided between the first heat dissipation surface 600e and the second heat dissipation surface 600f, and the first terminal block 310 to the third terminal block 330 are each covered with the coating resin 600.

[0138] The first outer surface 430f side of the first conductive plate 410 is also covered with the coating resin 600. However, a part of the first heat dissipation section 450 provided on the first outer surface 430f is exposed from the coating resin 600. The surface of the first heat dissipation section 450 exposed from the coating resin 600 (first exposed surface 450a) is flush with the first heat dissipation surface 600e. Note that the first exposed surface 450a does not have to be flush with the first heat dissipation surface 600e.

[0139] The second outer surface 460f side of the second conductive plate 420 is also covered with the coating resin 600. However, a part of the second heat dissipation portion 480 provided on the second outer surface 460f is exposed from the coating resin 600. The surface of the second heat dissipation portion 480 exposed from the coating resin 600 (the second exposed surface 480a) is flush with the second heat dissipation surface 600f. Note that the second exposed surface 480a does not have to be flush with the second heat dissipation surface 600f.

[0140] The coating resin 600 covers the connection portions of the drain terminal 510, the source terminal 520, and the midpoint terminal 530 with the conductive plate 400. The coating resin 600 covers the connection portions of the sensor terminal 550, the first gate terminal 541, and the second gate terminal 542 with the semiconductor chip 200. The tip sides of these various terminals are exposed from the coating resin 600.

[0141] The tip side of each of the drain terminal 510, the source terminal 520, and the first gate terminal 541 is exposed from the upper surface 600c. The tip side of the drain terminal 510 and the source terminal 520 extends in the y direction in a manner away from the upper surface 600c. The tip side of the first gate terminal 541 extends in the y direction in a manner away from the upper surface 600c, and is bent to extend in the z direction from the second heat dissipation surface 600f toward the first heat dissipation surface 600e. As shown in FIG. 4, the bent portion of the first gate terminal 541 is located closer to the upper surface 600c in the y direction than the tip ends of the drain terminal 510 and the source terminal 520.

[0142] The tip side of each of the midpoint terminal 530, the second gate terminal 542, and the sensor terminal 550 is exposed from the lower surface 600d. The tip side of the midpoint terminal 530 extends in the y direction in a manner away from the lower surface 600d. The tip sides of each of the second gate terminal 542 and the sensor terminal 550 extend in the y direction in a manner away from the lower surface 600d, and are bent and extend in the z direction in a direction from the second heat dissipation surface 600f toward the first heat dissipation surface 600e. The bent portions of each of the second gate terminal 542 and the sensor terminal 550 are located closer to the lower surface 600d in the y direction than the extreme ends of each of the midpoint terminal 530 and the sensor terminal 550.

[0143] <Cooler> The power conversion unit 30 has a cooler 60 shown in Figures 17 to 19 in addition to the power conversion device 50. The cooler 60 serves to cool each of the U-phase semiconductor module 121 to W-phase semiconductor module 123 described thus far.

[0144] 17, the cooler 60 has a supply pipe 710, a discharge pipe 720, and a cooling section 730. The supply pipe 710 and the discharge pipe 720 are connected via the cooling section 730. A refrigerant is supplied to the supply pipe 710. This refrigerant flows from the supply pipe 710 to the discharge pipe 720 through the internal space of the cooling section 730.

[0145] The supply pipe 710 and the discharge pipe 720 each extend in the z direction. The supply pipe 710 and the discharge pipe 720 are spaced apart in the x direction. The cooling section 730 has a flat shape with a small thickness in the z direction.

[0146] <Cooling section> Specifically, cooling unit 730 has opposing portion 731, first arm portion 732, and second arm portion 733. First arm portion 732 and second arm portion 733 are connected to opposing portion 731. Each of these three components has a hollow (internal space) through which the refrigerant flows. The hollows of each of these three components are connected to each other.

[0147] Supply pipe 710 is connected to first arm portion 732. Discharge pipe 720 is connected to second arm portion 733. Due to this configuration, the refrigerant supplied from supply pipe 710 flows to opposing portion 731 via first arm portion 732. The refrigerant that has flowed to opposing portion 731 flows to discharge pipe 720 via second arm portion 733. The flow direction of the refrigerant is indicated by solid arrows in FIG.

[0148] The facing portion 731 has a first side surface 731a and a second side surface 731b spaced apart from each other in the x direction, a third side surface 731c and a fourth side surface 731d spaced apart from each other in the y direction, and an outer surface 731e and an inner surface 731f spaced apart from each other in the z direction.

[0149] The first arm 732 and the second arm 733 are each connected to a fourth side surface 731d of the opposing portion 731. The first arm 732 and the second arm 733 are spaced apart in the x direction. In the x direction, the first arm 732 is located closer to the first side surface 731a than the second arm 733. The second arm 733 is located closer to the second side surface 731b than the first arm 732.

[0150] The first arm 732 and the second arm 733 each extend in the y direction away from the fourth side surface 731d. The first arm 732 and the second arm 733 each have an upper outer surface 730a and a lower inner surface 730b aligned in the z direction. The supply pipe 710 is connected to the lower inner surface 730b on the tip side of the first arm 732. The discharge pipe 720 is connected to the lower inner surface 730b on the tip side of the second arm 733.

[0151] For ease of notation, the opposing portion 731 side of each of the first arm portion 732 and the second arm portion 733 will be referred to as an extension portion 734. The tip side of each of the first arm portion 732 and the second arm portion 733 will be referred to as a pipe connecting portion 735.

[0152] <x-position of supply pipe and exhaust pipe> For example, as shown in Fig. 18, the length of extension 734 in the x direction is constant at L1. In contrast, the length of pipe connecting part 735 in the x direction is indefinite. The portion of pipe connecting part 735 where supply pipe 710 and discharge pipe 720 are connected forms a circle in a plane perpendicular to the z direction. In Fig. 18, supply pipe 710 and discharge pipe 720 are indicated by dashed lines.

[0153] The outer diameters of the supply pipe 710 and the discharge pipe 720 are longer than the length in the x direction of the extension 734. Therefore, the maximum length L2 in the x direction of the pipe connecting part 735 is longer than the maximum length L1 in the x direction of the extension 734.

[0154] Due to the relationship between the lengths in the x direction and the respective shapes of extension portion 734 and pipe connecting portion 735, all of extension portion 734 is located in a part of the projection area in the y direction of pipe connecting portion 735. In this embodiment, fourth side surface 731d is located in non-overlapping area NOA that does not overlap with extension portion 734 in the projection area in the y direction of pipe connecting portion 735. In Fig. 18, the area between pipe connecting portion 735 and fourth side surface 731d in non-overlapping area NOA is shown surrounded by a two-dot chain line.

[0155] Naturally, the fourth side surface 731d where the non-overlapping area NOA of the pipe connecting portion 735 is located is located between the first side surface 731a and the second side surface 731b in the x direction. The extension portion 734 connected to the pipe connecting portion 735 extends in the y direction from the fourth side surface 731d. Due to this configuration, the position of the pipe connecting portion 735 of each of the first arm portion 732 and the second arm portion 733 in the x direction is between the first side surface 731a and the second side surface 731b.

[0156] <Enclosed area> Due to the configuration described above, an enclosed area EA is defined by the opposing portion 731, the first arm portion 732, and the second arm portion 733 of the cooling portion 730, as shown in FIG.

[0157] The enclosed area EA is defined in the y direction by the fourth side surface 731d and an imaginary straight line VSL connecting the tip of the first arm portion 732 and the tip of the second arm portion 733. The enclosed area EA is defined in the x direction by the inner surface of the first arm portion 732 facing the second arm portion 733 and the inner surface of the second arm portion 733 facing the first arm portion 732. In Fig. 18, the enclosed area EA is indicated by oblique hatching. The imaginary straight line VSL is indicated by a two-dot chain line.

[0158] <Power module> Cooler 60 is housed together with power converter 50 in a housing 70 manufactured by, for example, aluminum die casting. Then, facing portion 731 of cooling unit 730 is disposed facing wall portion 810 of housing 70 while being spaced apart from it in the z direction, as shown in FIG.

[0159] A gap is formed (defined) between an inner surface 731f of the facing portion 731 and a mounting surface 810a of the wall portion 810. A U-phase semiconductor module 121, a V-phase semiconductor module 122, and a W-phase semiconductor module 123 are provided in this gap. Coating resin 600 for these multiple semiconductor modules is provided in the gap between the facing portion 731 and the wall portion 810. These multiple semiconductor modules and the cooler 60 are included in the power module 80.

[0160] The U-phase semiconductor module 121, the V-phase semiconductor module 122, and the W-phase semiconductor module 123 are lined up in order from the first side surface 731a side to the second side surface 731b side in the x direction.

[0161] 19 is applied to the facing portion 731 of the cooling portion 730. The multiple semiconductor modules are sandwiched between the facing portion 731 and the wall portion 810 by this biasing force.

[0162] Although not shown, a heat transfer member such as grease is provided between the inner surface 731f of the facing portion 731 and the first exposed surface 450a and the first heat dissipation surface 600e of the semiconductor module. Similarly, a heat transfer member such as grease is provided between the second exposed surface 480a and the second heat dissipation surface 600f of the semiconductor module and the mounting surface 810a of the wall portion 810. With this configuration, the semiconductor module can actively conduct heat to the cooler 60 and the wall portion 810. However, the above-mentioned heat transfer member does not have to be provided on the first heat dissipation surface 600e and the second heat dissipation surface 600f. In addition, the heat transfer member may not be provided at all.

[0163] Due to the above-described connection configuration, the U-phase semiconductor module 121, the V-phase semiconductor module 122, and the W-phase semiconductor module 123 each exchange heat with the refrigerant flowing mainly inside the facing portion 731 in the x-direction.

[0164] Note that the wall portion 810 on which the semiconductor module is provided does not have to be a part of the housing 70. The semiconductor module may be provided on the wall portion 810 that is separate from the housing 70. A circulation path through which the coolant flows may be formed inside the wall portion 810.

[0165] 17 and 18, the upper surface 600c side and the lower surface 600d side of the coating resin 600 are provided outside the gap. Accordingly, the tip sides of the drain terminal 510, the source terminal 520, and the first gate terminal 541 exposed from the upper surface 600c are provided outside the gap. The tip sides of the midpoint terminal 530, the second gate terminal 542, and the sensor terminal 550 exposed from the lower surface 600d are provided outside the gap. The tips of the terminals protruding from the lower surface 600d are aligned with the enclosed area EA in the z direction.

[0166] 18, the first gate terminal 541 extends in the y direction away from the upper surface 600c, then bends and extends in the z direction away from the wall portion 810. The second gate terminal 542 and the sensor terminal 550 extend in the y direction away from the lower surface 600d, then bends and extends in the z direction away from the wall portion 810. Part of the tips of the second gate terminal 542 and the sensor terminal 550 are provided in the enclosed area EA.

[0167] Although not shown, the control board 130 is provided above the multiple semiconductor modules in the z direction. A cooling unit 730 is located between the control board 130 and the multiple semiconductor modules. A multiple number of through holes are formed in the control board 130, penetrating in the z direction. The first gate terminal 541, the second gate terminal 542, and the sensor terminal 550 are passed through the multiple through holes, respectively. These terminals are then connected to the control board 130 by solder or the like.

[0168] <PバスバとNバスバ> As described above, the P bus bar 101 is connected to the drain terminal 510. The N bus bar 102 is connected to the source terminal 520. The P bus bar 101 and the N bus bar 102 are manufactured by pressing a flat plate of copper or the like. As shown in Figures 20 to 22, the P bus bar 101 and the N bus bar 102 each have a main plate 106 and a leg portion 107.

[0169] The main plate 106 has a long shape that is biased in the x direction. After extending in the y direction, the main plate 106 is bent and extends in the z direction. The main plate 106 is bent into an L shape in a plane perpendicular to the x direction. An electrode of a smoothing capacitor 110 is connected to a portion of the main plate 106 extending in the y direction. A plurality of legs 107 are integrally connected to a portion of the main plate 106 extending in the z direction.

[0170] Each of the multiple foot portions 107 extends from the main plate 106 in the z direction, then bends and extends in the y direction away from the main plate 106. The foot portions 107 are bent into an L shape in a plane perpendicular to the x direction. The multiple foot portions 107 are arranged in a line at intervals in the x direction. In this embodiment, six foot portions 107 are integrally connected to the main plate 106.

[0171] 20 to 22, the main plate 106 of the P bus bar 101 and the main plate 106 of the N bus bar 102 are arranged overlapping in the z direction and the y direction. A thin insulating sheet is interposed between these two main plates 106. The P bus bar 101 and the N bus bar 102 are each lined up with the U-phase semiconductor module 121 to the W-phase semiconductor module 123 in the y direction.

[0172] With the two main plates 106 overlapped in this manner, the legs 107 of the P bus bar 101 and the legs 107 of the N bus bar 102 are lined up at a distance in the x direction. The two legs 107 of the P bus bar 101 are located between the two legs 107 of the N bus bar 102. Three sets of four legs 107 are configured in this manner. These three sets of four legs 107 are lined up in the x direction.

[0173] 21, a portion of leg 107 of P bus bar 101 extending in the y direction is disposed opposite in the z direction to drain terminal 510. In this opposed state, leg 107 of P bus bar 101 and drain terminal 510 are joined.

[0174] A portion of the leg 107 of the N bus bar 102 extending in the y direction is disposed opposite in the z direction to the source terminal 520. In this opposed state, the leg 107 of the N bus bar 102 and the source terminal 520 are joined.

[0175] As described above, the first gate terminal 541 extends in the y direction from the upper surface 600c of the coating resin 600, and then bends and extends in the z direction. The bent portion of the first gate terminal 541 is located closer to the upper surface 600c in the y direction than the extreme ends of the drain terminal 510 and the source terminal 520.

[0176] The portion of the first gate terminal 541 extending in the z direction is aligned with but spaced apart from the main plates 106 of the P bus bar 101 and the N bus bar 102 in the y direction. This prevents interference between the first gate terminal 541 and the main plate 106. The distance between the first gate terminal 541 and the main plate 106 is determined so as to ensure insulation between them.

[0177] 23, foot 107 may extend in the z direction from main board 106, bend and extend in the y direction away from main board 106, and then bend again to extend in the z direction. Drain terminal 510 and source terminal 520 may extend in the y direction from upper surface 600c, and then bend and extend in the z direction. A portion of foot 107 extending in the z direction from the bent portion again may be joined to portions of drain terminal 510 and source terminal 520 extending in the z direction in a state of being disposed opposite each other in the y direction.

[0178] <Phase bus bar> As described above, U-phase bus bar 103, V-phase bus bar 104, and W-phase bus bar 105 are individually connected to midpoint terminals 530 of U-phase semiconductor module 121, V-phase semiconductor module 122, and W-phase semiconductor module 123, respectively. These three phase bus bars are manufactured by pressing a flat plate made of copper or the like. As shown in Figs. 20 to 22, U-phase bus bar 103 to W-phase bus bar 105 each have a long plate 108 and a connection end 109.

[0179] The long plate 108 has a long shape that is biased in the y direction. After extending in the y direction, the long plate 108 is bent and extends in the z direction. The long plate 108 is bent into an L shape in a plane perpendicular to the x direction. A stator coil of the motor 40 is connected to a portion of the long plate 108 extending in the y direction. A plurality of connection ends 109 are integrally connected to a portion of the long plate 108 extending in the z direction.

[0180] Each of the multiple connection ends 109 extends from the long plate 108 in the z direction, then bends and extends in the y direction away from the long plate 108. The connection ends 109 are bent into an L shape in a plane perpendicular to the x direction. The multiple connection ends 109 are lined up in the x direction and spaced apart from each other. In this embodiment, two connection ends 109 are integrally connected to the long plate 108.

[0181] 20 to 22, the long plates 108 of U-phase bus bar 103 to W-phase bus bar 105 are arranged side by side with a space in the x direction. U-phase bus bar 103 is lined up with U-phase semiconductor module 121 in the y direction. V-phase bus bar 104 is lined up with V-phase semiconductor module 122 in the y direction. W-phase bus bar 105 is lined up with W-phase semiconductor module 123 in the y direction.

[0182] The two connection ends 109 connected to the three long plates 108 are also spaced apart from each other in the x direction, making a total of six connection ends 109 spaced apart from each other in the x direction.

[0183] 21 , a portion extending in the y direction of one of the two connection ends 109 connected to the long plate 108 is disposed opposite one of the two midpoint terminals 530 in the z direction. A portion extending in the y direction of the other of the two connection ends 109 connected to the long plate 108 is disposed opposite the other of the two midpoint terminals 530 in the z direction. In this opposed state, the two connection ends 109 and the two midpoint terminals 530 are individually joined.

[0184] With connection end portion 109 joined to midpoint terminal 530 in this manner, a portion of each of U-phase bus bar 103 to W-phase bus bar 105 is provided in the above-described enclosed area EA.

[0185] As described above, the second gate terminal 542 and the sensor terminal 550 extend in the y direction from the lower surface 600d of the coating resin 600, and then bend and extend in the z direction. The bent portions of the second gate terminal 542 and the sensor terminal 550 are located closer to the lower surface 600d in the y direction than the tip end of the midpoint terminal 530.

[0186] The portions of the second gate terminal 542 and the sensor terminal 550 extending in the z direction are aligned with but spaced apart from the long plate 108 in the y direction, thereby preventing interference between the second gate terminal 542 and the sensor terminal 550 and the long plate 108. The distances between the second gate terminal 542 and the sensor terminal 550 and the long plate 108 are determined so as to ensure insulation between them.

[0187] 23, connection end 109 may extend in the z direction from long plate 108, bend and extend in the y direction away from long plate 108, and then bend again and extend in the z direction. Midpoint terminal 530 may extend in the y direction from lower surface 600d, and then bend and extend in the z direction. A portion of connection end 109 extending in the z direction from the bent portion again and a portion of midpoint terminal 530 extending in the z direction may be joined in a state of being disposed opposite each other in the y direction.

[0188] <Action and effect> As described above, each of U-phase semiconductor module 121 to W-phase semiconductor module 123 has first semiconductor chip 210 and second semiconductor chip 220 spaced apart from each other in the y direction. First semiconductor chip 210 and second semiconductor chip 220 spaced apart from each other in the y direction mainly exchange heat with a coolant flowing inside facing portion 731 in the x direction.

[0189] In this manner, the arrangement direction of first semiconductor chip 210 on which high-side switch 141 is formed and second semiconductor chip 220 on which low-side switch 151 is formed intersects with the flow direction of the coolant that cools them and flows inside facing portion 731. The arrangement direction of electrically connected high-side switch 141 and low-side switch 151 intersects with the flow direction of the coolant that cools them.

[0190] This suppresses a difference from occurring between the amount of heat exchange between high-side switch 141 and the refrigerant flowing through opposing portion 731, and the amount of heat exchange between low-side switch 151 and the refrigerant flowing through opposing portion 731. This suppresses a difference from occurring between the amount of heat exchange between first semiconductor chip 210 and second semiconductor chip 220, which are covered and protected by covering resin 600 and arranged spaced apart in the y direction, and the refrigerant flowing through opposing portion 731.

[0191] Two drain terminals 510 are distributed between the first and second distribution spaces, and two source terminals 520 are distributed between the first and second distribution spaces. The first gate terminal 541 is located between the drain terminal 510 and the source terminal 520 in the first distribution space and the drain terminal 510 and the source terminal 520 in the second distribution space.

[0192] According to this, electromagnetic noises emitted from the drain terminal 510 arranged in the first distribution space and the drain terminal 510 arranged in the second distribution space are easily cancelled between the two. Similarly, electromagnetic noises emitted from the source terminal 520 arranged in the first distribution space and the source terminal 520 arranged in the second distribution space are easily cancelled between the two. Therefore, the electromagnetic noises emitted from these terminals are prevented from acting on the first gate terminal 541 located between the terminal provided in the first distribution space and the terminal provided in the second distribution space.

[0193] As described above, the two drain terminals 510 are evenly distributed between the first and second distribution spaces, and the two source terminals 520 are evenly distributed between the first and second distribution spaces.

[0194] This effectively prevents electromagnetic noise emitted from the drain terminal 510 from acting on the first gate terminal 541, compared to a configuration in which the multiple drain terminals 510 are distributed and arranged unevenly to either the first distribution space or the second distribution space. It effectively prevents electromagnetic noise emitted from the source terminal 520 from acting on the first gate terminal 541, compared to a configuration in which the multiple source terminals 520 are distributed and arranged unevenly to either the first distribution space or the second distribution space.

[0195] Two midpoint terminals 530 are distributed to the first distribution space and the second distribution space. The second gate terminal 542 is located between the midpoint terminal 530 provided in the first distribution space and the midpoint terminal 530 provided in the second distribution space.

[0196] This makes it easier for electromagnetic noises emitted from the midpoint terminal 530 arranged in the first distribution space and the midpoint terminal 530 arranged in the second distribution space to be cancelled out between them. The electromagnetic noises emitted from these terminals are prevented from acting on the second gate terminal 542 located between the midpoint terminal 530 provided in the first distribution space and the midpoint terminal 530 provided in the second distribution space.

[0197] In addition, the sensor terminal 550 is also located between the midpoint terminal 530 provided in the first distribution space and the midpoint terminal 530 provided in the second distribution space. This prevents electromagnetic noise generated from the midpoint terminal 530 provided in the first distribution space and the midpoint terminal 530 provided in the second distribution space from acting on the sensor terminal 550.

[0198] As described above, the two midpoint terminals 530 are evenly distributed and arranged in the first distribution space and the second distribution space. This effectively prevents electromagnetic noise generated from the midpoint terminals 530 from acting on the second gate terminal 542 and the sensor terminal 550, compared to a configuration in which the multiple midpoint terminals 530 are unevenly distributed and arranged in either the first distribution space or the second distribution space.

[0199] A portion of each of the first folded portion 444 and the second folded portion 445 of the first lower conductive portion 442 overlaps with the second upper conductive portion 471 in the z direction in an overlapping area OA shown in Fig. 15. A portion of each of the first folded portion 444 and the second folded portion 445 is aligned with the second upper conductive portion 471 in the z direction with the coating resin 600 interposed therebetween.

[0200] This increases the negative mutual inductance between the first lower current conducting part 442 and the second upper current conducting part 471. This prevents an increase in inductance between the first lower current conducting part 442 and the second upper current conducting part 471.

[0201] The first current-carrying part 440 through which a current flows and the first heat dissipation part 450 having electrical conductivity are arranged in the z-direction via the first insulating plate 430. This allows an eddy current to flow in the first heat dissipation part 450. This suppresses an increase in inductance of the first current-carrying part 440.

[0202] The second current-carrying part 470 through which a current flows and the second heat dissipation part 480 having electrical conductivity are arranged in the z-direction via the second insulating plate 460. This allows an eddy current to flow in the second heat dissipation part 480. This suppresses an increase in inductance of the second current-carrying part 470.

[0203] Two current paths for currents flowing in the same direction in the y direction from the drain terminal 510 toward the second semiconductor chip 220 are adjacent to each other in the x direction. This makes it easier for electromagnetic noises emitted from the two current paths to be canceled out between the two current paths.

[0204] An end of the source terminal 520 is connected to the first conductive plate 410. A portion of the source terminal 520 is located between the second conductive plate 420 and the first conductive plate 410 in the z direction.

[0205] This suppresses an increase in the size of the power card 120 compared to, for example, a configuration in which the source terminal 520 is connected to a portion of the second conductive plate 420 that does not face the first conductive plate 410 in the z direction.

[0206] In the comparative example, relay members for electrically connecting the first conductive plate 410 and the source terminal 520 are required between the two conductive plates and on the first conductive plate 410. In the present embodiment, these relay members are not required, which prevents an increase in the number of parts.

[0207] An enclosed area EA defined by opposing portion 731, first arm portion 732, and second arm portion 733 of cooling portion 730 and the tip sides of multiple terminals protruding from lower surface 600d of coating resin 600 are aligned in the z direction.

[0208] This makes it easier for the air located in the enclosed area EA to be cooled by the refrigerant flowing through the hollow spaces of the three components of the cooling unit 730. This air makes it easier for the tip sides of the multiple terminals protruding from the lower surface 600d to be cooled.

[0209] Second gate terminal 542 and a portion of sensor terminal 550 are located in enclosed area EA. Also, portions of U-phase bus bar 103 to W-phase bus bar 105 are located in enclosed area EA. This makes it easier for the air located in enclosed area EA to lower the temperatures of second gate terminal 542, sensor terminal 550, and U-phase bus bar 103 to W-phase bus bar 105.

[0210] (First Modification) In the present embodiment, the first heat dissipation section 450 and the first current conducting section 440 have the same shape in a plane perpendicular to the z direction. However, the first heat dissipation section 450 and the first current conducting section 440 may have different shapes in a plane perpendicular to the z direction.

[0211] First heat dissipation section 450 may have a larger area in a plane perpendicular to the z direction than first current conducting section 440. A configuration in which the area of ​​first heat dissipation section 450 on the first current conducting section 440 side is increased can be employed.

[0212] 24, the first heat dissipation portion 450 may be formed over the entire first outer surface 430f of the first insulating plate 430. The first heat dissipation portion 450 may be a solid pattern. This makes it easier for eddy currents to flow in the first heat dissipation portion 450. An increase in inductance of the first current-carrying portion 440 is effectively suppressed.

[0213] (Second Modification) In the present embodiment, the second heat dissipation section 480 and the second current conducting section 470 have the same shape in a plane perpendicular to the z direction. However, the second heat dissipation section 480 and the second current conducting section 470 may have different shapes in a plane perpendicular to the z direction.

[0214] Second heat dissipation section 480 may have a larger area in a plane perpendicular to the z direction than second current conducting section 470. A configuration in which the area of ​​second heat dissipation section 480 on the second current conducting section 470 side is increased can be employed.

[0215] 25, the second heat dissipation portion 480 may be formed over the entire second outer surface 460f of the second insulating plate 460. The second heat dissipation portion 480 may be a solid pattern. This makes it easier for eddy currents to flow in the second heat dissipation portion 480. An increase in inductance of the second current-carrying portion 470 is effectively suppressed.

[0216] (Third Modification) In the present embodiment, an example has been shown in which the first upper conductive portion 441 of the first conductive plate 410 and the second lower conductive portion 472 of the second conductive plate 420 are electrically connected via the third terminal block 330. However, the third terminal block 330 may be omitted by adopting the configurations shown in Figs. 26 and 27, for example. The cross-sectional view shown in Fig. 26 corresponds to a cross-section taken along line VI-VI shown in Fig. 6. The cross-sectional view shown in Fig. 27 corresponds to a cross-section taken along line VII-VII shown in Fig. 6.

[0217] 26 and 27, the second conductive plate 420 has a common current conducting portion 473 in which the second upper current conducting portion 471 and the second lower current conducting portion 472 are integrally connected, instead of the second upper current conducting portion 471 and the second lower current conducting portion 472. The source electrode 201 of the first semiconductor chip 210 is connected to the common current conducting portion 473 via the first terminal block 310. The drain electrode of the first semiconductor chip 210 is connected to the first upper current conducting portion 441.

[0218] By employing such a configuration, first semiconductor chip 210 and second semiconductor chip 220 can be electrically connected without using third terminal block 330. Third terminal block 330 can be omitted.

[0219] 8, first upper current portion 441 extends toward first upper side surface 430c in the y direction. Drain terminal 510 is connected to a portion of first upper current portion 441 aligned in the x direction with the end portions of first folded portion 444 and second folded portion 445 on the first upper side surface 430c side.

[0220] In this modification, a part of the common electric current portion 473 is located in the projection area in the z direction of each of the first folded back portion 444 and the second folded back portion 445 of the first lower electric current portion 442. As in the present embodiment, the first heat dissipation portion 450 is aligned with the first electric current portion 440 in the z direction, and the second heat dissipation portion 480 is aligned with the second electric current portion 470 in the z direction. Note that, naturally, a configuration in which the configurations shown in Figs. 26 and 27 are upside down can also be adopted.

[0221] The first upper conductive portion 441 corresponds to a first conductive portion. The first terminal block 310 and the common conductive portion 473 correspond to a second conductive portion. The second terminal block 320 and the first lower conductive portion 442 correspond to a third conductive portion.

[0222] (Fourth Modification) In this embodiment, an example has been shown in which the power card 120 has two each of the first semiconductor chips 210 and the second semiconductor chips 220. However, the number of each of the first semiconductor chips 210 and the second semiconductor chips 220 that the power card 120 has is not limited. The power card 120 may have one each of the first semiconductor chips 210 and the second semiconductor chips 220, or three or more. One power card 120 may have multiple semiconductor chips of the same type or different types lined up in the y direction.

[0223] The power card 120 may have one high-side switch 141 and one low-side switch 151, or three or more high-side switches 141 and one low-side switch 151. One power card 120 may have a plurality of switches of the same type or different types lined up in the y direction.

[0224] (Fifth Modification) In this embodiment, an example has been shown in which the power card 120 has the temperature sensor 160. However, the power card 120 does not have to have the temperature sensor 160. In this modified example, the power card 120 does not have the sensor terminal 550.

[0225] In the present embodiment, an example has been shown in which the temperature sensor 160 is formed in the second semiconductor chip 220. However, the temperature sensor 160 does not have to be formed in the second semiconductor chip 220. The temperature sensor 160 may be formed in the first semiconductor chip 210. The temperature sensor 160 may be formed separately from each of the first semiconductor chip 210 and the second semiconductor chip 220.

[0226] It is also possible to employ a configuration in which the power card 120 has a physical quantity sensor that detects a physical quantity different from the temperature sensor 160. The different physical quantity may be, for example, a current or a voltage.

[0227] (Sixth Modification) In this embodiment, an example has been shown in which the power card 120 has two midpoint terminals 530. However, the power card 120 may have one midpoint terminal 530.

[0228] (Seventh Modification) In this embodiment, an example has been shown in which the power card 120 has two source terminals 520. However, the power card 120 may have one source terminal 520.

[0229] (Eighth Modification) In this embodiment, an example has been shown in which the power card 120 has two drain terminals 510. However, the power card 120 may have one drain terminal 510.

[0230] (Ninth Variation) In the present embodiment, an example has been shown in which two drain terminals 510 and two first gate terminals 541 are located between two source terminals 520, and two first gate terminals 541 are located between two drain terminals 510. However, a configuration in which two source terminals 520 and two first gate terminals 541 are located between two drain terminals 510, and two first gate terminals 541 are located between two source terminals 520, may also be adopted.

[0231] (Other variations) In this embodiment, an example has been shown in which n-channel MOSFETs are used as the switches provided in each of the U-phase semiconductor modules 121 to W-phase semiconductor modules 123. However, there is no particular limitation on the type of switch provided in each of these three-phase semiconductor modules. For example, IGBTs can be used as these switches. The types of switches provided in each of the three-phase semiconductor modules may be the same or different.

[0232] In this embodiment, an example has been shown in which the high-side switch 141 and the high-side diode 142 are formed on the first semiconductor chip 210. However, the high-side switch 141 and the high-side diode 142 may be formed on separate semiconductor chips.

[0233] In this embodiment, an example has been shown in which the low-side switch 151 and the low-side diode 152 are formed on the second semiconductor chip 220. However, the low-side switch 151 and the low-side diode 152 may each be formed on a different semiconductor chip.

[0234] In the present embodiment, an example has been shown in which an inverter is included in the power conversion device 50. However, the power conversion device 50 may include a converter in addition to the inverter.

[0235] In the present embodiment, an example has been shown in which the power conversion unit 30 is included in the on-board system 10 for an electric vehicle. However, the application of the power conversion unit 30 is not particularly limited to the above example. For example, a configuration in which the power conversion unit 30 is included in a hybrid system equipped with a motor and an internal combustion engine may also be adopted.

[0236] In the present embodiment, an example has been shown in which one motor 40 is connected to the power conversion unit 30. However, it is also possible to adopt a configuration in which a plurality of motors 40 are connected to the power conversion unit 30. In this case, the power conversion unit 30 has a plurality of three-phase semiconductor modules for forming an inverter.

[0237] Although the present disclosure has been described based on the embodiment, it is understood that the present disclosure is not limited to the embodiment or structure. The present disclosure also includes various modifications and modifications within the equivalent range. In addition, although various combinations and forms are shown in the present disclosure, other combinations and forms including only one element, more than one element, or less than one element are also within the scope and concept of the present disclosure. [Explanation of symbols]

[0238] 141...high-side switch, 141a...drain, 141b...source, 141c...gate, 151...low-side switch, 151a...drain, 151b...source, 151c...gate, 160...temperature sensor, 200a...front surface, 200b...back surface, 210...first semiconductor chip, 220...second semiconductor chip, 310...first terminal block, 320...second terminal block, 330...third terminal block, 430...first insulating plate, 430e...first inner surface, 430f...first outer surface, 441...first upper conductive portion, 442...first lower conductive portion, 450...first heat dissipation portion, 460...second insulating plate, 460e...second inner surface, 460f...second outer surface, 471...second upper conductive portion, 472...second lower conductive portion, 473...common conductive portion, 480...second heat dissipation portion, 500...connection terminal, 510...drain terminal, 520...source terminal, 530...midpoint terminal, 541...first gate terminal, 542...second gate terminal, 550...sensor terminal, 600...coating resin, 600c...upper surface, 600d...lower surface, 730...cooling portion, 731...facing portion, 732...first arm portion, 733...second arm portion

Claims

1. A power card is provided in a cooling section (730) in which a refrigerant flows in an internal space extending in a horizontal direction, the power cards being arranged in a vertical direction perpendicular to the horizontal direction, Two first switches (141) each having a first electrode (141a), a second electrode (141b), and a first control electrode (141c) for controlling a current flow state between the first electrode and the second electrode; Two second switches (151) each having a third electrode (151a), a fourth electrode (151b), and a second control electrode (151c) for controlling a current flow state between the third electrode and the fourth electrode; a first insulating plate (430) having a first conductive portion (471) connected to the two first electrodes and a third conductive portion (472) connected to the two third electrodes mounted on a first inner surface (430e); a second insulating plate (460) having a second inner surface (460e) on which a portion of each of a second conductive portion (310, 441) connected to the two second electrodes and a fourth conductive portion (320, 442) connected to the two fourth electrodes is mounted; One relay conductive portion (330) that connects the second conductive portion and the third conductive portion; a resin portion (600) that covers the two first switches, the two second switches, the first conductive portion, the second conductive portion, the third conductive portion, the fourth conductive portion, and the relay conductive portion; a plurality of external connection terminals (500) electrically connected to the two first switches and the two second switches, respectively, and partially exposed from the resin portion; the two first switches are electrically connected in parallel by the first conductive portion and the second conductive portion; the two second switches are electrically connected in parallel by the third conductive portion and the fourth conductive portion; two of the first switches connected in parallel and two of the second switches connected in parallel are electrically connected in series by one of the relay conductive parts; Two of the first switches are arranged side by side in the horizontal direction, Two of the second switches are arranged side by side in the horizontal direction, two of the first switches and two of the second switches are arranged in a vertical direction perpendicular to the horizontal direction and the height direction, one relay conductive portion is located between two of the first switches and two of the second switches in the vertical direction, One of the relay conductive portions extends in the horizontal direction further than in the vertical direction, all of the lateral positions of one of the relay conductive parts are between the lateral positions of the geometric centers of two of the first switches; A power card in which the vertical projection area of ​​one of the relay conductive parts is located at two of the first switches and the second conductive part, and two of the second switches and the fourth conductive part, respectively.

2. The resin portion has an upper surface (600c) and a lower surface (600d) spaced apart in the vertical direction, the first switch is located on the upper surface side in the vertical direction, the second switch is located on the lower surface side in the vertical direction, 2. The power card according to claim 1, wherein the tips of the plurality of external connection terminals protrude from the upper surface and the lower surface.

3. The plurality of external connection terminals include a positive terminal (510) electrically connected to the first electrode, a negative terminal (520) electrically connected to the fourth electrode, a midpoint terminal (530) electrically connected to each of the second electrode and the third electrode, a first control terminal (541) electrically connected to the first control electrode, and a second control terminal (542) electrically connected to the second control electrode; a tip end of each of the positive terminal, the negative terminal, and the first control terminal protrudes from the upper surface; 3. The power card according to claim 2, wherein a tip of each of the midpoint terminal and the second control terminal protrudes from the lower surface.

4. At least one of the positive electrode terminal and the negative electrode terminal has a tip that branches into multiple parts, a plurality of branched ends of at least one of the positive electrode terminal and the negative electrode terminal are distributed and arranged on a first distribution space side and a second distribution space side that are divided by a reference plane perpendicular to the lateral direction; 4. The power card according to claim 3, wherein the first control terminal is located, in the lateral direction, between an end of at least one of the positive terminal and the negative terminal provided on the first distribution space side and an end of at least one of the positive terminal and the negative terminal provided on the second distribution space side.

5. The positive electrode terminal and the negative electrode terminal each have a tip that branches into multiple parts, The branched ends of the positive electrode terminal are arranged in a distributed manner on the first distribution space side and the second distribution space side, 5. The power card according to claim 4, wherein the branched ends of the negative electrode terminal are distributed and arranged on the first distribution space side and the second distribution space side.

6. 6. The power card according to claim 5, wherein at least one of the ends of the plurality of positive electrode terminals and the ends of the plurality of negative electrode terminals are evenly distributed and arranged on the first distribution space side and the second distribution space side.

7. 7. The power card according to claim 5 or 6, wherein all of a plurality of ends included in one of the positive electrode terminal and the negative electrode terminal are located between an end of the other of the positive electrode terminal and the negative electrode terminal distributed on the first distribution space side and an end of the other of the positive electrode terminal and the negative electrode terminal distributed on the second distribution space side in the lateral direction.

8. The tip of the midpoint terminal is branched into multiple parts, 8. The power card according to claim 3, wherein the second control terminal is located between the tips of the plurality of midpoint terminals in the horizontal direction.

9. 9. The power card according to claim 8, wherein the tips of the plurality of midpoint terminals are equally distributed in the lateral direction via the second control terminal.

10. A sensor (160) for detecting physical quantities of the first switch and the second switch; 10. The power card according to claim 8 or 9, wherein a tip of a sensor terminal (550) of the sensor protrudes from the lower surface and is located between tips of a plurality of the midpoint terminals in the lateral direction.

11. a first semiconductor chip (210) including the first switch, the first electrode being formed on a first main surface (200b) and the second electrode being formed on a second main surface (200a) on the rear side of the first main surface; A power card as claimed in any one of claims 1 to 10, further comprising: a second semiconductor chip (220) including the second switch, the third electrode being formed on a third main surface (200b) and the fourth electrode being formed on a fourth main surface (200a) on the back side of the third main surface.

12. The power card according to claim 11 , wherein a part of the first conductive portion is located in a projection area of ​​the fourth conductive portion in the height direction.

13. A first heat dissipation portion (450) mounted on a first outer surface (430f) on the back side of the first inner surface of the first insulating plate and aligned with each of the first conductive portion and the third conductive portion in the height direction; A power card as described in claim 11 or claim 12, further comprising: a second heat dissipation portion (480) mounted on a second outer surface (460f) on the back side of the second inner surface of the second insulating plate and aligned with each of the second conductive portion and the fourth conductive portion in the height direction.

14. 14. The power card according to claim 13, wherein some of the plurality of external connection terminals are located between the first insulating plate and the second insulating plate.

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