Holding device for electrostatically holding a component, including a substrate joined by diffusion bonding, and method for manufacturing same

Abstract

To provide a holding apparatus for electrostatically holding a semiconductor wafer, which is improved in geometric and thermal stability.SOLUTION: A holding apparatus 100, which is adapted for electrostatically holding in particular a wafer, includes: an electrically insulating base body 10 including a first pair of base body plates 11, 12 which are connected to one another in a planar manner via a joining connection; and an electrode device 20 with at least one electrode layer 21, which generates an electrostatic holding force and is arranged to extend parallel to an extension of the base body plates 11, 12 along the joining connection. The joining connection includes a diffusion bond connection 13. The at least one electrode layer 21 is connected in a planar manner to the respectively adjacent base body plates 11, 12, and has a contact section 22 which is arranged for electrically contacting the at least one electrode layer 21.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a holding device for electrostatically holding a component, in particular a semiconductor wafer. The present invention also relates to a method for manufacturing the holding device. Applications of the present invention can be used in providing an apparatus or tool for holding a component, in particular a semiconductor wafer, such as for example a silicon wafer, by electrostatic forces. [Background technology]

[0002] Reference is made herein to the following prior art which represents the technical background of the present invention: [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent No. 7,092,231 B2 [Patent Document 2] U.S. Patent No. 6,864,957 B2 [Patent Document 3] US Patent Application Publication No. 2015 / 0348816A1 [Patent Document 4] U.S. Patent No. 5,998,049A [Patent Document 5] US Patent Application Publication No. 2011 / 0288648A1 [Patent Document 6] US Patent Application Publication No. 2011 / 0288648A1 [Patent Document 7] European Patent No. 76467B1 [Non-patent literature]

[0004] [Non-Patent Document 1] OM Akselsenin "J. of Material Science" 27 (1992), 569 - 579. [Non-Patent Document 2] Dunbar P. Birne IIIin "J. of the American Ceram. S." C-33 - C-35 (2) (1986). [Non-Patent Document 3] Thomas J. Moore in "Material Science and Engineering" B 176. 60 - 64 (2011). [Non-Patent Document 4] Michael C. Halbig et al. Presentation "Diffusion Bonding of Silicon Carbide Ceramics Using Titanium Intermediate layer" NASA, 22.01.2006 (http: / / ntrs.nasa.gov / archive / nasa / casi.ntrs.nasa.gov / 20060051742.pdf)

[0005] An electrostatic holding device, also called an electrostatic clamping device, electrostatic clamp (ESC) or electrostatic chuck, generally comprises a plate-shaped substrate for holding a part and an electrode device for generating an electrostatic holding force, or in terms of range, an electrostatic clamping pressure (see Patent Documents 1 and 2). The substrate can be constructed, for example, integrally from a plate or in multiple layers from multiple substrate plates. The electrode device can include, for example, two thin semicircular electrode layers embedded between the substrate plates and separated from each other by an insulating region. When a voltage is applied to the electrode layers, the parts on the substrate are attracted and held in place according to Coulomb's law.

[0006] For example, electrostatic clamping is used to position semiconductor wafers, especially silicon wafers, during various processing steps of chip manufacturing, such as lithographic exposure, 3D wafer bonding, optical inspection and / or other manufacturing steps. In this application, the substrate is typically provided with protruding burls on at least one surface, the end faces of which extend into the support surface of the held component (burl support surface).

[0007] When processing semiconductor wafers, extremely strict demands are placed on the precision of the positioning of the semiconductor wafer. Lithographic exposure of the semiconductor wafer produces line widths of 10 nm or a few tens of nm. The required positioning precision is then a few nm. Another challenge is 3D wafer bonding, where two or more wafers are glued and contacted. Metal solders, such as Cu-based, are used for the contact. Very small distances are required between the solder contacts. In addition to high positioning precision, high temperature stability, typically in the range of 250 °C to 500 °C, is also required to be able to solder the contacts between the wafers.

[0008] Due in particular to the above requirements, electrostatic clamps with high geometric and thermal stability are of interest. The base plates are therefore typically made of ceramic materials, such as for example silicon nitride, aluminium nitride or aluminium oxide. These combine particularly good electrical properties, in particular high power handling, high specific electrical resistivity and high dielectric constant, with favourable thermal and mechanical properties. The thermal properties are the thermal conductivity, which must be as high as possible, and the thermal expansion, which must be as low as possible, so that high precision is guaranteed in the lateral holding of the semiconductor wafer even in the case of temperature fluctuations. The mechanical properties are bending strength, hardness and fracture toughness.

[0009] However, the use of ceramic materials can lead to difficulties in the manufacture and operation of the clamp. To manufacture a multi-layer electrostatic clamp with several base plates, and in particular to connect the base plates to each other and to the electrode device, joining methods such as adhesive bonding (see, for example, US Pat. No. 5,399,633), anodic bonding, or sintering of a conductive layer with a non-conductive layer are used.

[0010] Adhesive bonding can be disadvantageous because it guarantees permanent geometric stability only to a limited extent if the adhesive continues to polymerize after curing. Furthermore, adhesive clamps have limited thermal stability. Therefore, adhesive clamps have limited suitability for many wafer holding applications.

[0011] The disadvantages of anodic bonding can be attributed to the limited number of suitable materials and the heat treatment conditions of the process. A glass layer between the bonding partners is usually used for anodic bonding, but it is thermally insulating, which significantly impairs the necessary heat flow in the device. In addition, the precision of the device deteriorates over time because glass is relatively soft and does not resist abrasion by the semiconductor wafer very well, and conductive glass is problematic compared to ceramic materials when used as an electrode.

[0012] For example, when conductive and non-conductive layers are sintered together, a wire mesh made of tungsten or molybdenum is sintered to a ceramic, or silicon nitride is doped, for example, with molybdenum silicide or titanium nitride to make it conductive (see US Pat. No. 5,399,313). The clamps are then made from different layers of conductive and non-conductive silicon nitride. These parts are produced by combining doped and non-doped powders in a hot press, but the manufacturing precision of the clamps is severely limited due to the shrinkage that occurs during sintering, which cannot be determined in advance. This drawback is also the case for devices with wire mesh.

[0013] The multi-layer construction of conventional clamps with several base plates leads to long and almost completely continuous process chains with high costs, limited yields, high consumption and high costs due to rework and long delivery times in production. If the burrs are made of soft dielectric materials (such as glass), they are less wear-resistant than ceramic burrs. In this case, applying additional wear protection layers increases the manufacturing effort and requires regular cycle renewal.

[0014] The problems mentioned may occur not only in holding devices for holding semiconductor wafers, but also in other applications, for example in holding devices for holding glass plates.

[0015] Another commonly known joining method for producing high strength joints is diffusion bonding, in which plates, disks or other ceramic parts are connected to each other in a uniaxial hot press under pressure and heat (see, for example, US Pat. No. 5,333,311; 2003 / 010,331). Depending on the diffusivity of the materials, different surface qualities, temperatures and pressures can be used. Diffusion bonding of materials with low intrinsic diffusion (see, for example, US Pat. No. 5,333,311; 2003 / 010,331) can be supported by intermediate layers (diffusion bonding layers) (see, for example, US Pat. No. 5,333,311; 2003 / 010,331). Up to now, the application of diffusion bonding has been limited to the connection of simple unstructured surfaces with very high planarity to the joining partners. Summary of the Invention [Problem to be solved by the invention]

[0016] The object of the present invention is to provide an improved holding device for electrostatically holding components, in particular semiconductor wafers, in which the drawbacks of the prior art are avoided. In particular, the holding device should be able to be manufactured using simplified methods, have improved geometric and thermal stability, and be able to hold components with high precision and / or withstand use at high temperatures, in particular above 350° C. Furthermore, it is an object of the present invention to provide an improved method for manufacturing an electrostatic holding device, in which the drawbacks of the prior art are avoided. In particular, the method is characterized by a simplified manufacture of the holding device, which allows high precision, reproducibility and stability of the clamp design, and / or by insensitivity to high temperatures. [Means for solving the problem]

[0017] These objects are achieved by an electrostatic holding device and a method for manufacturing an electrostatic holding device with the features of the independent claims. Advantageous embodiments and applications of the invention result from the dependent claims.

[0018] According to a first general aspect of the invention, the above object is achieved by an electrostatic holding device for electrostatically holding components, in particular components of semiconductor wafers, such as silicon wafers, comprising an electrically insulating multi-layer substrate and an electrode device. The substrate comprises at least two electrically insulating substrate plates (first pair of substrate plates), which are connected to each other on the surface by a joint connection. The substrate plates are two parts extending in a main plane, preferably having a flat surface at least on the side facing each other. The direction along the extension parallel to the main plane is also called the transverse direction, and the direction perpendicular thereto is also called the thickness direction. The substrate plates are also called disks, layers or sheets. They can each be made in a single part from a single material or from multiple materials. Furthermore, the substrate plates can be made of the same or different materials and have the same or different thicknesses. In particular, one of the substrate plates can be thicker than the other substrate plates and form a carrier plate (or base plate), while the other substrate plates can be of a correspondingly thinner thickness and form a dielectric to set the dielectric properties of the holding device. On the opposing faces, the base plates can likewise have planar surfaces or alternatively structured surfaces, for example comprising protruding burls whose end faces span the burl support surfaces or recesses for forming temper lines, for example cooling channels.

[0019] The electrode arrangement comprises at least one, in particular single or multi-layer electrode layer, which is configured to generate an electrostatic holding force and which preferably extends parallel to the preferably planar extension of the base plate, i.e. parallel to the main surface of the base plate along the lateral extension of the joint connection. The at least one electrode layer is preferably at least one planar continuous (uninterrupted) layer made of a conductive material, in particular a conductive material with high electrical conductivity, such that a voltage is applied to the electrode layer relative to ground potential, to a further potential of the electrode layer and / or to the potential of the component supported by the holding device, allowing undelayed generation of the holding force. The specific electrical resistivity (see below) of at least one insulating region in the lateral direction between the base plate and possibly the electrode layer is preferably greater than 10 3More than 10 Ωcm, particularly preferably 10 12 Larger than Ωcm, especially 10 15 Ωcm or more, and at the same time the specific electrical resistance of the at least one electrode layer is preferably less than 10 Ωcm, particularly preferably less than 0.1 Ωcm, in particular less than 0.01 Ωcm. The thickness of the at least one electrode layer is preferably selected in the range of 30 nm to 3000 nm, particularly preferably in the range of 100 nm to 1000 nm. The at least one electrode layer extends laterally over the entire connection surface of the base plate or over a part of the surface of the joint connection (connection surface). In the latter case, the at least one electrode layer can have a distance, for example, to the edge of the connection surface. The part between the base plates, where the joined base is free of an electrode layer, is also called the insulating region.

[0020] According to the invention, the bonding connection is a diffusion bonding connection, in which at least one electrode layer is planarly connected to the adjacent substrate plate. If at least one electrode layer is formed such that there is an insulating region between the substrate plates, the substrate plates are preferably connected to each other directly or via an insulating intermediate layer of the insulating region via a diffusion bonding connection. Both substrate plates are preferably connected to each other without interruption over the entire surface via a diffusion bonding connection. A diffusion bonding connection is a bonding connection, in which a substance from one of the bonding partners, i.e. from at least one electrode layer, substrate plate and / or insulating intermediate layer, is diffused into the respective other bonding partner, i.e. into the adjacent substrate plate, such as at least one electrode layer and / or insulating intermediate layer. Diffusion involves material transport at temperatures below the melting point of the bonding partners. The diffusion profile of the substance of the adjacent bonding partners is provided perpendicular to the lateral extension of the bonding connection formed by diffusion bonding. The bonding partners are firmly connected to each other by the diffused substance, in particular by interatomic forces between them and the bonding partners.

[0021] Furthermore, according to the invention, the at least one electrode layer each has at least one contact portion arranged for electrical contact with the at least one electrode layer, the contact portion comprising at least one layer of electrically conductive material, preferably the material of the electrode layer, extending parallel to the extension of the base plate along the lateral extension of the joining connection.

[0022] Advantageously, different variants for providing the contacts are possible, which can be implemented individually or in combination. In all cases, the contact with the connecting wires is obtained, for example, by soldering and / or by using conductive silver or conductive adhesive.

[0023] According to a first variant, contacts for electrical contact of at least one electrode layer can be arranged on the outer edge of the base plate. In this case, the contacts preferably have the shape of conductor strips (conductor paths) which are connected on the one hand to the planar electrode layer and form an interface on the other hand at the edge of the base plate for connecting a connecting line (cable, wire). The contacts extend from the electrode layer to the edge of the base plate through an insulating area. Alternatively, at least one planar electrode layer can extend to the edge of the base plate. In this case, the edge part of the electrode layer can form the contacts. The contacts at the edge of the base are preferably exposed laterally, so that connecting lines for connecting to a voltage source can be connected laterally.

[0024] According to a second variant, at least one of the base plates can be provided with a recess or a hole at its edge. In this case, the electrode layer in the region of the hole or recess, particularly at a distance from the edge of the base plate, can form a contact. The contact is made through the hole or recess perpendicular to the transverse direction of the base.

[0025] According to a third variant, one of the base plates carrying the electrode layer can at least partially protrude above the other base plate, in which part of the electrode layer is exposed as a contact for contacting the electrode layer.

[0026] According to a second general aspect of the invention, the above object is achieved by a method for manufacturing a holding device adapted to electrostatically hold a component, in particular a semiconductor wafer. Preferably, this method is used for manufacturing a holding device according to the above first general aspect of the invention. The method according to the invention comprises the steps of providing two base plates, manufacturing at least one layer of at least one electrically conductive material for forming at least one electrode layer with at least one contact on at least one of the base plates, and joining the base plates with at least one electrode layer arranged between the base plates by diffusion bonding. According to the invention, the joining connection is produced by pressing the base plates in a mutual arrangement, in which the at least one electrode layer with the contact is located between the base plates and the contact is arranged on the edge of the base plate. The joining connection is a diffusion bonding connection, in which at least the at least one electrode layer with the contact is planarly connected with the respective adjacent base plate. After the base plates are joined, the at least one electrode layer is preferably contacted by connecting a contact belonging to the at least one electrode layer to a connection line for connection to a voltage source.

[0027] The substrate plate is pressed against the binding partners at a temperature and pressure selected such that the substrate plate does not melt or soften, does not deform, and does not allow material diffusion from one binding partner to the other. Pressing is usually performed at a temperature higher than room temperature, and is therefore also called hot pressing. The temperature and pressure are selected depending on the material properties of the joining partners. The temperature during hot pressing is preferably in the range of 270°C to 2000°C, particularly preferably in the range of 1100°C to 1500°C, while the pressing pressure is preferably 50 bar to 2000 bar, particularly preferably 150 bar to 500 bar.

[0028] Advantageously, according to the invention, a multi-layer electrostatic clamp is created with at least one bonding electrode. The device is preferably used for electrostatic positioning of semiconductor wafers in the manufacture of semiconductor components, in particular microchips, for example in lithography processes or wafer bonding processes. The provision of a diffusion bonded connection has the special advantage that the holding device has a geometrically, mechanically and thermally extremely stable structure and that the at least one electrode layer is firmly integrated. A tight bond is formed from the substrate plate and the electrode layer of the bonding partners, the at least one electrode layer advantageously fulfilling the double function as both an electrode and a diffusion bonding layer (diffusion support layer, interdiffusion layer). The use of diffusion bonding layers for diffusion bonding of ceramics is known per se. However, the inventors have surprisingly discovered that the diffusion bonding layer can be electrically conductive and can furthermore be used as an electrode of the bonded electrostatic clamp.

[0029] Another advantage of the present invention is that different variations of the electrode device are available depending on the particular application of the invention. Thus, the electrode device can be constructed as a monopolar electrode device with a single electrode layer, or as a bipolar electrode device with two electrode layers, or as a multipolar electrode device with three or more electrode layers.

[0030] According to a particularly preferred embodiment of the invention, the electrode device comprises at least two electrode layers which extend parallel to the extension of the base plate along the lateral extension of the bonded connection and are spaced apart from each other by at least one insulating region. The electrode layers each have at least one contact arranged to contact the respective electrode layer. In at least one insulating region, the base plate has a diffusion bonded connection, either directly or via an insulating intermediate layer. The distance between the electrode layers in the lateral direction (width of the insulating region) is preferably selected in the range of 0.5 mm to 5 mm. The diffusion bonded connection in the at least one insulating region advantageously forms an electrically insulating material composite, so that leakage currents between the electrode layers can be suppressed even if high voltages, for example 3 kV, are applied to them.

[0031] Regarding the method, the at least two electrode layers of this embodiment are manufactured on at least one of the substrate plates and arranged such that at least one insulating region is arranged between the at least two electrode layers of the joined substrates. All electrode layers can be manufactured on one of the substrate plates such that the electrode layers form the desired electrode arrangement of the electrode device, or on both substrate plates such that the electrode layers are aligned with each other. During hot pressing, the substrate plates are joined by diffusion bonding such that the substrate plates are connected directly or via an insulating intermediate layer, especially in at least one insulating region.

[0032] In bipolar or multipolar electrode arrangements, undesired charging of the held parts can be advantageously avoided.Furthermore, it has surprisingly been found that stable diffusion bonded connections can also be produced in the case of dissimilar bonding partners, where different materials, for example electrode layer / substrate plate and substrate plate / substrate plate and optionally substrate plate / intermediate layer, alternate laterally along the bonding junction.

[0033] An insulating interlayer in at least one insulating region can be advantageous to improve the planarity of the mutually facing surfaces of the joining partners. In the insulating region, the insulating interlayer can compensate for height differences with adjacent electrode layers. The insulating interlayer can be, for example, SiO 2 From oxide or oxynitride glass, silicon nitride, silicon oxide aluminum nitride (SiAlON), yttrium oxide, aluminum oxide, rare earth oxide (La 2 O 3 From Lu 2 O 3 ), oxides of the second main group (MgO, CaO, SrO, BaO) or mixtures of the above. The thickness of the insulating intermediate layer is preferably equal to the thickness of the laterally adjacent layers of conductive material intended to form the electrode layers. The insulating intermediate layer can be produced, for example, by lithographic processes, in particular by means of a mask, by sputtering.

[0034] Alternatively, the intermediate layer of at least one insulating region is not necessarily required. As a further particular advantage, the inventors have discovered that a stable diffusion bonded connection can also be created if the electrode layer protrudes above the surface of the respective base plate by only a part or all of its thickness, thus introducing a small step into the mutually facing surfaces of the bonding partners. Again, the bonding result is thermally, mechanically and electrically stable, even in the areas without electrode layers.

[0035] The at least two electrode layers between the substrate plates are preferably arranged in a common plane. According to a first variant, the at least two electrode layers are produced from at least one planar precursor layer on at least one substrate plate. In a first step, the at least one precursor layer is deposited by a deposition process, and in a further step, the at least one planar precursor layer is structured to form at least two electrode layers and insulating regions. The structuring is preferably carried out using a lithographic process, in particular using a mask, for example a photoresist, a photographic film or a hard mask, for example by vacuum deposition or electrolytic deposition. By using a mask, the electrode path structure and the conductor path structure can be constructed. In a lithographic process, the insulating regions are preferably generated after exposure via an etching step. According to a second variant, the at least two electrode layers are applied in a structured manner by a physical or chemical deposition process.

[0036] According to a further preferred embodiment of the invention, the substrate plates each comprise a ceramic material. Ceramic materials have proven to be particularly advantageous for the formation of diffusion bonded connections, which allows a flat, possibly polished surface of the binding partner and an effective diffusion of foreign atoms. At the same time, they have good electrical and mechanical properties for use in electrostatic holding devices. Particularly preferably, the substrate plates each comprise at least one of silicon nitride, silicon carbide, aluminum oxide silicon nitride (SiAlON), aluminum oxide, oxynitride glass, aluminum nitride, silicates, aluminosilicates, or a mixture of at least two of these ceramic materials. At least one ceramic material of the substrate plates may be a glass ceramic, for example under the trademark Zerodur.

[0037] Each electrode layer preferably comprises a metal, a metal alloy, a semiconductor material or a conductive ceramic. Particularly preferred examples are chromium, silver, gold, platinum, nickel, cobalt, iron, vanadium, tantalum, aluminum, titanium, tungsten, molybdenum, manganese, an alloy of at least two of these materials, or a stack of two or more layers of these metals or their alloys, such as AgCuTi alloys, molybdenum-manganese alloys, tin-gold alloys, eutectic gold-silicon alloys, such as Au94Si6, silicon, metal nitrides, in particular titanium nitride (TiN, Ti), such as Incusil or Ticusil®. 2 N, Ti 3 N 4 ), chromium nitride (CrN), metal carbides, metal silicides, especially molybdenum silicide (MoSi 2 ), or nitrogen (N)-doped silicon carbide. Titanium is Ti 3 S 5 It is particularly preferred because it advantageously has favorable interdiffusion properties, such as forming strong bonds with Si-based ceramics.

[0038] Advantageously, there are various possibilities for arranging at least one electrode layer on at least one substrate plate. According to a first variant, at least one electrode layer is arranged on the substrate plates joined along a joint connection between the substrate plates. The atoms of the at least one electrode layer are arranged diffusely on two adjacent substrate plates and the atoms of the substrate plate are arranged diffusely on the at least one electrode layer. In this embodiment, the method comprises depositing a layer for the at least one electrode layer on one or both substrate plates, after which a diffusion-bonded connection is formed in hot pressing. The advantage of this embodiment is the simplified procedure for the manufacture of the at least one electrode layer.

[0039] According to a second alternative variant, the at least one electrode layer is embedded along the bonded connection of the interface formed by one of the substrate plates. The atoms of the at least one electrode layer are diffusely arranged in the respective adjacent substrate plate to which the diffusion bonded connection is made. In this embodiment, after depositing a layer of the at least one electrode layer on a portion of one or respectively both substrate plates, a thermal diffusion process is carried out to implant the deposited atoms into the associated substrate plate. Subsequently, prior to bonding by diffusion bonding, the protruding areas of the deposited layer are preferably removed so that the at least one electrode layer is embedded in one of the substrate plates.

[0040] The holding device is not limited to a configuration with a two-layer substrate. According to an embodiment of the invention that is particularly preferred for use in holding semiconductor wafers, the substrate comprises at least two further substrate plates (a second pair of substrate plates), between which at least one further electrode layer of the electrode device is arranged and has a bonding connection like the first pair of substrate plates. Also, according to one of the above variants, the at least one further electrode layer has contacts that are arranged on the edge of the substrate for electrical contact with the at least one further electrode layer. The first pair of substrate plates and the second pair of substrate plates are connected to each other in a planar manner. The bonding connection can also include a diffusion bonded connection or another type of connection. In the completed holding device, the substrate plates of the first and second pairs form a tightly bonded plate stack.

[0041] This embodiment with at least four base plates provides an advantage in using the holding device by providing a first pair of base plates for electrostatically holding the part and a second pair of base plates for electrostatically holding the holding device to the tool carrier of the machine. Electrodes in the two pairs of base plates can be energized independently of each other to position or release the part or to fix or release the holding device to the tool carrier. Advantageously, a temperature control conduit, in particular a cooling circuit, can be provided in at least one of the first and second pairs of interconnected base plates. [Brief description of the drawings]

[0042] Further details and advantages of the invention are explained below with reference to the accompanying drawings. [Figure 1] 1 is a schematic diagram of an embodiment of a holding device according to the invention; [Diagram 2] 1 is a schematic diagram of an embodiment of a holding device according to the invention; [Diagram 3] 1 is a schematic diagram of an embodiment of a holding device according to the invention; [Figure 4] FIG. 2 is a photographic cross-sectional view of a substrate of an electrostatic holding device according to one embodiment of the present invention. [Diagram 5] 4 is a schematic diagram of another embodiment of a holding device according to the invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0043] A preferred embodiment of the invention is described below by way of example with reference to the features of an electrostatic holding device for silicon wafers, which are shown diagrammatically (not to scale). The implementation of the invention is not limited to this application and the exemplary features of the holding device. Other applications of the holding device are possible, for example when holding glass plates with metal coatings or exposure masks. The design of the substrate, in particular the electrodes, the materials and dimensions of the holding device and its parts can be adapted in particular to the specific requirements of the respective application. In most examples, the contacts are shown at the edge of the substrate. Alternatively, they can also be arranged at a distance from the edge, as mentioned above. Deviating from the figures, the substrate can have further substrate plates which perform further functions. In practical applications of the holding device, for example the handling of semiconductor wafers, the substrate is usually provided with burls on one or both sides, as illustrated in FIG. 5 on one of the body surfaces. Details of the specific shape and control of the electrodes along the joint connections of the substrate plates are not described, since they are known per se from conventional holding devices and can be selected depending on the specific task of the holding device. Finally, the figures do not show a to-scale drawing of the retaining device, but in particular the provision of an electrode arrangement along the joint between the base plates of the base.

[0044] The structure of the substrate of the holding device can be selected as known per se from conventional holding devices (electrostatic clamps). The holding device can be configured, for example, as a monopolar (FIG. 1 or 2) or bipolar holding device (FIG. 3 or 5). Details of the temperature control of the holding device and the application of the electric voltage for generating the electrostatic holding force are not described, since these are known per se from conventional holding devices. The holding device can comprise further components as known per se from conventional electrostatic clamps.

[0045] FIG. 1 shows a first embodiment of a holding device 100 (monopolar clamp) in a cross section perpendicular to the thickness direction (FIG. 1A) and perpendicular to the lateral extension of the holding device 100 (FIG. 1B). The holding device 100 comprises a base 10, for example made of silicon nitride, with a pair of base plates 11, 12. An electrode device 20 with a monopolar pole is arranged between the base plates 11, 12. In this embodiment, the electrode device 20 consists of a single circular electrode layer 21 with contacts 22 that run parallel to the extension of the base plates along a diffusion bonded connection 13. The base plates 11, 12 are connected to each other in planar fashion by the diffusion bonded connection 13. The holding device 100 is manufactured as described below with reference to the embodiment of FIG. 3.

[0046] In practical applications, the upper substrate plate 11 has a thickness of, for example, 4 mm, and the lower substrate plate 12 has a thickness of 4 mm. The diameter of the circular substrate plates 11, 12 is generally selected in the range of 150 mm to 400 mm, for example 330 mm or 400 mm in the embodiment shown. The electrode layer 21 with the contacts 22 is, for example, made of titanium and has a thickness of, for example, 500 nm. The diameter of the electrode layer 21 (for example 300 mm) is smaller than the diameter of the substrate plates 11, 12, so that an annular insulating area 14 is formed at its edge. Figure 4 shows a photographic cross-section of an example of a substrate with the upper and lower substrate plates 11, 12 and the electrode layer 21 between them.

[0047] The contacts 22 extend as conductor paths as interruptions of the insulating regions 14 from the electrode layer 21 to the edges of the base plates 11, 12. In order to clarify that the contacts 22 are located at the edges for the connection of connecting lines, the contacts 22 are shown in FIG. 1 as protruding beyond the edges of the base plates 11, 12. In practice, protrusions are not absolutely necessary, but other forms of exposure for contacting are possible. In particular, alternatively, it is possible to use a part of the electrode layer 21 as contact 22A, which part of the electrode layer 21 is contacted through the hole 12A of the base plate 12, for example with conductive silver or conductive glue and / or wire connection.

[0048] By application of the holding device 100 for holding a component (not shown), one of the base plates, e.g. the upper base plate 11, is provided for receiving the component and the other base plate, e.g. the lower base plate 12, is rigidly connected to a tool carrier (not shown). The electrode layer 21 is connected via contacts 22 and connecting lines (not shown) to a switchable voltage source for applying a holding voltage to the electrode layer 21.

[0049] FIG. 2 shows a variant of the embodiment of FIG. 1, in which the holding device 100 in the form of a monopolar clamp has a circular electrode layer 21A with a contact 22A and further an annular electrode layer 21B with a contact 22B. FIG. 2, like FIG. 1B, is a cross-sectional view of the substrate perpendicular to the lateral extension of the holding device 100 and along the diffusion-bonded connection between the substrate plates, so that only one of the substrate plates 11 is shown. The annular electrode layer 21B is arranged for connection to ground potential and is used for electric field shielding. It forms an annular electrode surrounding the circular electrode layer 21A, except for the interruption where the contact 22A of the circular electrode layer 21A extends towards the outer edge of the substrate plate. The annular electrode layer 21B and the circular electrode layer 21A are electrically insulated from each other by an insulating region 14. Furthermore, the holding device 100 of FIG. 2 can be constructed as described above with reference to the other figures.

[0050] The base plates of the holding device 100 according to Fig. 2 are connected to one another in planar fashion by diffusion bonded connections. The diffusion bonded connections are present directly between the electrode layers 21A, 21B with their contacts 22A, 22B and adjacent base plates and in the insulating regions 14 between the base plates. The holding device 100 is manufactured as described below with reference to the embodiment of Fig. 3.

[0051] FIG. 3 shows a further embodiment of the invention, in which a holding device 100 in the form of a bipolar clamp is provided with two semicircular electrode layers 21A, 21B with contacts 22A, 22B, respectively, and further with two semiannular electrode layers 21C, 21D with contacts 22C, 22D, respectively. FIG. 3A shows a cross-section of the substrate 10 perpendicular to the lateral extension of the holding device 100, and FIG. 3B shows a cross-section of the substrate 10 perpendicular to its thickness direction and along the diffusion bonded connection between the substrate plates 11, 12. FIG. 3B further shows the semiconductor wafer 1 carried by the holding device 100. In a variant of the bipolar clamp, instead of the two semicircular electrode layers 21A, 21B, three or more electrode layers can be provided, for example each in the form of a segment of a circle and each provided with a contact, and / or the outer annular electrode layer can be omitted.

[0052] According to Fig. 3, the semicircular electrode layers 21A, 21B are each connected to a switchable voltage source 30 via one of the contacts 22A, 22B. In the illustrated example, the voltage source 30 is a DC voltage source, which can apply positive and negative potentials of a DC voltage to the semicircular electrode layers 21A, 21B for electrostatic fixing of the semiconductor wafer 1. The semiannular electrode layers 21C, 21D are arranged for electric field shielding for connection to a ground potential. They surround the semicircular electrode layers 21A, 21B, except for an interruption for implementing the contacts 22A, 22B towards the outer edge of the base plate 11, 12. Furthermore, the holding device 100 of Fig. 3 can be constructed as described above with reference to the other figures.

[0053] The holding device 100 is manufactured as follows: first, two planar ceramic plates are manufactured, the surface of each plate being polished with the aim of forming a diffusion-bonded connection. The other surface in each case can also be provided with a polished surface or with structures for forming burrs or tempering medium conduits (see FIG. 5). The ceramic plates are produced in a manner known per se, for example by hot pressing or by a prior forming such as cold isostatic or uniaxial pressing, followed by sintering, gas pressure sintering and optionally followed by hot isostatic post-compression or by deposition of ceramic materials from the gas phase (CVD, chemical vapor deposition). For glass-ceramic materials, melting, nucleation and crystallization can also be used.

[0054] This is followed by a structured deposition of a layer of conductive material on one of the polished surfaces with the desired shape of the electrode layer. The deposition step is preferably carried out using lithographic processes known per se. For example, in a first substep, one polished surface of the ceramic plate is masked with the desired shape of the electrode layer, and in a second substep, the ceramic plate is coated with a metal layer, for example by vacuum deposition. After structuring the mask in further substeps, a structured layer of conductive material is obtained, for example in the shape of the electrode layer and the contacts according to FIG. 3. As an alternative to the described lithographic structuring, a layer of conductive material is first applied planarly to one of the substrate plates and subsequently coated with a photoresist. The photoresist is exposed and structured in the desired shape of the electrode layer. Subsequent etching results in the layer of conductive material laterally taking on the desired structure.

[0055] If an insulating interlayer is formed as a laterally diffusion supporting and / or planarizing layer between the electrode layers, the masking, deposition and structuring steps are repeated with the insulating interlayer material.

[0056] The diffusion bonded connection is produced by placing ceramic plates with polished surfaces facing and in contact with each other, one of which has a structured layer of conductive material, in a uniaxial hot press and applying a defined pressing pressure at a defined temperature. Alternatively, so-called discharge plasma-assisted hot pressing can be used, which advantageously allows very rapid heating. As known per se from diffusion bonding, the temperature and the pressing pressure are selected taking into account the materials used. The temperature and the pressing pressure are preferably selected in the following ranges: The pressing time of the hot press, which typically includes the heating phase, the holding time and the cooling phase, is, for example, from 0.5 h to 30 h, preferably from 8 h to 12 h.

[0057] During hot pressing, atoms of the layer of conductive material, or in insulating areas one of the substrate plates, diffuse into the adjacent substrate plate. If an insulating interlayer is formed in the insulating area, their atoms diffuse into the adjacent substrate plate. The atoms of the adjacent bonding partners create a diffusion profile, so that the bonding partners are firmly bonded to each other. In the above example, a diffusion profile of titanium atoms is created in the adjacent ceramic of the adjacent substrate plate.

[0058] Finally, the composite of substrate plates is subjected to a post-treatment, which involves thinning one of the substrate plates, which serves as a carrier for the part to be held, and contacting it via contacts to the two electrode layers. Thinning one of the substrate plates serves to form a dielectric layer by the substrate plate. The electrostatic clamping pressure of the holding device depends, inter alia, on the voltage, on the distance of the electrodes from the burl support surface and on the dielectric properties of the material composition at this distance. The holding force of the holding device is therefore set by the thickness of the dielectric layer. Thinning is carried out by removal methods known per se, such as, for example, grinding, lapping, polishing. As a result, the holding device is obtained as a part with integrated conductive layers separated and contacted by electrically insulating areas.

[0059] Optionally, in a variant of the described method, after the formation of the laterally structured layer of conductive material and before the formation of the diffusion bonded connection, the conductive material can be embedded in the supporting substrate plate by thermal diffusion. The substrate plate with the structured layer of conductive material is heated to a temperature below the melting temperature of the conductive material, for example in the range of 500°C to 1400°C, preferably up to 1000°C. The atoms of the conductive material are embedded in the relevant substrate plate, and the deposited conductive material is at least partially embedded in the substrate plate. Residues of the deposited conductive material protruding beyond the surface of the substrate plate can then be removed.

[0060] In a particular example, the holding device is manufactured using the method described below. Two silicon nitride disks with a size of φ = 100 mm × 5.1 mm are lapped to a global flatness of 10 μm. The surface is then polished using a diamond suspension, typically with a grain size of 1 μm to 3 μm, a flatness of a few μm to less than 1 μm, and a roughness (RMS) of less than 15 nm. Afterwards, the parts are cleaned. Using a mask (adhesive film), two crescent-shaped titanium layers (500 nm thick) are coated (see Figure 3). The two parts are diffusion bonded in a hot press with the following parameters: heating rate: 10 K / min, temperature: 1350 °C, pressing pressure: 400 bar, holding time 3 hours, air: nitrogen. After hot pressing, one of the disks is thinned to a thickness of 0.3 mm and contacted with an electrode.

[0061] The electrostatic effect of the holding device thus produced was tested by placing a test part on the holding device and measuring it interferometrically. The test part consists of a 2 inch silicon wafer with a bar structure. The bars are 500 μm in diameter and 10 μm high. They are spaced 7 mm apart. The initial thickness of the wafer is 275 μm. The curvature of the silicon wafer was measured interferometrically as a measure of the clamping pressure while the voltage on the electrodes was gradually increased to 2000 V. The clamping pressure increases with voltage and reaches about 80 mbar in the test example.

[0062] Figure 5 shows an embodiment of a holding device 100 according to the invention with a base 10 consisting of two pairs of base plates 11, 12 and 15, 16. The first and second pairs of base plates 11, 12 and 15, 16 are respectively joined and assembled by a diffusion bonded connection as described above with reference to Figures 1 to 3. Electrode layers 21A, 21B and 23A, 23B with contacts 22A, 22B and 24A, 24B are respectively arranged between the base plates 11, 12 and 15, 16 along the lateral extension of the diffusion bonded connection. The contacts 22A, 22B and 24A, 24B are each connected to a separately switchable voltage source (not shown).

[0063] A first pair of base plates 11, 12 is provided for receiving the component 1 to be held under the action of electrostatic holding forces generated by the electrode layers 21A, 21B. A second pair of base plates 15, 16 secures the holding device 100 to a diagrammatically shown tool carrier 40 under the influence of electrostatic holding forces generated by the electrode layers 24A, 24B. One of the base plates (e.g. 12) is provided with a temperature control conduit 17 for receiving a temperature control medium and preferably for cooling the holding device 100.

[0064] The features of the invention disclosed in the above description, in the drawings and in the claims can be important both individually and in combination or subcombination for the implementation of the invention in its various configurations.

Claims

1. A holding device (100) adapted to electrostatically hold a part (1), in particular a wafer, comprising: an electrically insulating base (10) comprising a first pair of base plates (11, 12) connected to one another in a planar manner via bonded connections; an electrode device (20) comprising at least one electrode layer (21, 21A, 21B, 21C, 21D) for generating an electrostatic holding force and arranged to extend parallel to the extension of said base plate (11, 12) along the joining connection; Including, the bonding connections include diffusion bonding connections (13), the at least one electrode layer (21, 21A, 21B, 21C, 21D) being planarly connected to the respective adjacent base plate (11, 12), and said at least one electrode layer (21, 21A, 21B, 21C, 21D) having contacts (22, 22A, 22B, 22C, 22D) arranged for electrical contact of said at least one electrode layer (21, 21A, 21B, 21C, 21D), - said electrode device (20) comprises at least two electrode layers (21, 21A, 21B, 21C, 21D) extending parallel to the extension of said base plate (11, 12) along said diffusion bonded connection (13) and arranged separated from each other by at least one insulating region (14); - said base plates (11, 12) are connected in said at least one insulating region (14) by said diffusion bonded connection, either directly or via an insulating intermediate layer, said at least one electrode layer (21, 21A, 21B, 21C, 21D) being arranged between said substrate plates (11, 12) and atoms of said at least one electrode layer (21, 21A, 21B, 21C, 21D) being diffused and arranged on two adjacent substrate plates (11, 12); Retaining device (100).

2. - said base plates (11, 12) each comprise a ceramic material; The retention device of claim 1 .

3. said substrate plates (11, 12) each comprise at least one of silicon nitride, silicon carbide, aluminum oxide silicon nitride (SiAlON), aluminum oxide, titanium oxide, zirconium oxide, yttrium oxide, oxynitride glass, aluminum nitride, sapphire, aluminates, in particular YAG (yttrium alumina garnet), silicates, aluminosilicates, in particular cordierite, and glass ceramics, or composites thereof; 3. The retaining device of claim 2.

4. - each of said electrode layers (21, 21A, 21B, 21C, 21D) comprises a metal, a metal alloy, a semiconductor material, or a conductive ceramic; A holding device according to any one of claims 1 to 3.

5. the electrode layers (21, 21A, 21B, 21C, 21D) are made of any of the following metals: chromium, aluminum, titanium, tungsten, molybdenum, silicon, manganese, vanadium, cobalt, nickel, gold, silver, AgCuTi alloys, molybdenum-manganese alloys, tin-gold alloys, eutectic gold-silicon alloys, metal nitrides, titanium nitride, in particular TiN, Ti ２ N, Ti ３ N ４ , chromium nitride, metal silicides, particularly molybdenum silicide, and carbides such as silicon carbide doped with nitrogen (N); 5. The retaining device of claim 4.

6. - said substrate (10) comprises a second pair of substrate plates (15, 16) between which at least one further electrode layer (23) of said electrode device (20) is arranged, said substrate (10) having a joint connection similar to that of the first pair of substrate plates (11, 12); - said at least one further electrode layer (23) has a contact portion (24) arranged in electrical contact with said at least one further electrode layer (23), and, the first pair of base plates (11, 12) and the second pair of base plates (15, 16) are connected to one another in a planar manner via diffusion bonded connections to form a plate stack; A holding device according to any one of claims 1 to 5.

7. at least one of the interconnected base plates of said first and second pairs of base plates (11, 12, 15, 16) is provided with a temperature control conduit (17); 7. The retaining device of claim 6.

8. A method for manufacturing a component (1), in particular a holding device (100) adapted to electrostatically hold a semiconductor wafer, comprising the following steps: - provision of two base plates (11, 12), - providing at least one of said base plates (11, 12) with at least one electrode layer (21, 21A, 21B, 21C, 21D), said at least one electrode layer (21, 21A, 21B, 21C, 21D) having contact portions (22, 22A, 22B, 22C, 22D), - pressing the base plates (11, 12) in mutual arrangement, in which the at least one electrode layer (21, 21A, 21B, 21C, 21D) with the contact portions (22, 22A, 22B, 22C, 22D) is arranged between the base plates (11, 12) and a bonding connection is formed, comprising a diffusion bonding connection (13) in which the at least one electrode layer (21, 21A, 21B, 21C, 21D) and the contact portions (22, 22A, 22B, 22C, 22D) are connected in a planar manner to the adjacent base plates (11, 12), Including, at least two electrode layers (21, 21A, 21B, 21C, 21D) are provided on at least one of said base plates (11, 12), said at least two electrode layers (21, 21A, 21B, 21C, 21D) being arranged separated from each other by at least one insulating area (14); - said base plates (11, 12) are connected in said at least one insulating region (14) by said diffusion bonded connection (13), either directly or via an insulating intermediate layer, said at least one electrode layer (21, 21A, 21B, 21C, 21D) being arranged between said substrate plates (11, 12) and atoms of said at least one electrode layer (21, 21A, 21B, 21C, 21D) being diffused and arranged on two adjacent substrate plates (11, 12); method.

9. Providing at least two electrode layers (21, 21A, 21B, 21C, 21D) on at least one of the base plates (11, 12) comprises the steps of: - the production of at least one planar precursor layer on at least one of said substrate plates (11, 12), and, - structuring said at least one planar precursor layer to form said at least two electrode layers (21, 21A, 21B, 21C, 21D) and said insulating regions (14), The method of claim 8 , comprising:

10. Further steps, contacting said at least one electrode layer (21, 21A, 21B, 21C, 21D) by connecting the associated contact (22, 22A, 22B, 22C, 22D) to a connecting line, 10. The method of claim 8 or 9, comprising:

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