Master plate, method for determining pattern on master plate, exposure method, and method for manufacturing article

Abstract

To provide an original plate capable of inhibiting convexoconcave in an inclination of a sidewall part of a resist used for forming a step shape on a multilayer film.SOLUTION: An original plate is provided with a pattern used for exposure of a photosensitive material disposed on an upper side of a multilayer film configured on a substrate. The pattern includes a main pattern and an auxiliary pattern disposed at a position separated from the main pattern by a predetermined interval. The auxiliary pattern inhibits convexoconcave in an inclination of a sidewall part of the main pattern formed on the photosensitive material.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to an original, a method for determining a pattern on an original, an exposure method, and a method for manufacturing an article. [Background technology]

[0002] In the manufacturing process of semiconductor devices, a step-like structure may be formed in a multilayer film formed by alternately stacking films having different dielectric constants. Patent Document 1 discloses a method for forming a step-like structure in a multilayer film by providing a resist on the multilayer film and alternately repeating etching of the multilayer film and reducing the width of the resist (trimming, slimming). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2014-36148 A Summary of the Invention [Problem to be solved by the invention]

[0004] It is preferable that the width of each step of the step shape formed in the multilayer film is not varied. Here, unevenness may occur in the slope of the sidewall of the resist, and this unevenness may cause the width of the exposed multilayer film to vary when the width of the resist is reduced. If the width of the exposed multilayer film varies, the width of the multilayer film to be etched when the multilayer film is repeatedly etched will vary, and the width of the step face of each step of the step shape will vary.

[0005] SUMMARY OF THE PRESENT DISCLOSURE An object of the present invention is to provide a master plate capable of suppressing unevenness in the slope of the sidewall portion of a resist used when forming a staircase shape in a multilayer film. [Means for solving the problem]

[0006] According to one aspect of the present invention for solving the above-mentioned problems, there is provided an original on which a pattern for use in exposing a photosensitive material arranged on an upper side of a multilayer film formed on a substrate is formed, the pattern having a main pattern and an auxiliary pattern arranged at a position spaced a predetermined distance from the main pattern, the auxiliary pattern is rectangular, and a length of a long side of one of the auxiliary patterns is equal to or longer than a length of a short side of a rectangular region in which the main pattern is arranged; The auxiliary pattern suppresses unevenness in the inclination of the sidewall portion of the main pattern formed on the photosensitive material.

[0007] Further objects or other aspects of the present invention will become apparent from the embodiments described below with reference to the drawings. Effect of the Invention

[0008] According to the present invention, it is possible to provide a master capable of suppressing unevenness in the slope of the sidewall portion of a resist used when forming a staircase shape in a multilayer film. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus in a first embodiment. [Diagram 2] 1A and 1B are schematic diagrams illustrating a step shape formed in a multilayer film. [Diagram 3] 1A and 1B are schematic diagrams illustrating a step shape formed in a multilayer film when the slope of the sidewall portion of the resist is uneven. [Figure 4] 2 is an example of a master in the first embodiment. [Diagram 5] This is a result of simulating the inclination of the sidewall of the resist. [Figure 6] 4 is an example of a method for determining a pattern of a reticle in the first embodiment. [Figure 7] 4 is another example of the master in the first embodiment. [Figure 8] 13 is an example of a mask pattern and a resist shape in the second embodiment. [Figure 9] 10 is a flowchart of a method for manufacturing an article in a third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that the following embodiment does not limit the invention according to the claims. Although the embodiment describes a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] In addition, in this specification and drawings, directions are basically indicated by an XYZ coordinate system in which the vertical direction is the Z axis and the horizontal plane perpendicular to the vertical direction is the XY plane, and the axes are mutually orthogonal. However, if an XYZ coordinate system is shown in each drawing, that coordinate system takes precedence.

[0012] A specific configuration will be described below for each embodiment.

[0013] First Embodiment 1 is a schematic diagram showing the configuration of an exposure apparatus 1 in this embodiment. In this embodiment, the exposure apparatus 1 is a projection exposure apparatus that exposes a pattern of an original (mask, reticle) onto a substrate via a projection optical system by a step-and-repeat method or a step-and-scan method.

[0014] The exposure apparatus 1 has an illumination optical system 12 that irradiates light, a projection optical system 14, an original stage 13 that holds an original 2, a stage 16 that is movable in the XY directions while holding a substrate 15, and a control unit 11. The original 2 has a pattern (e.g., a circuit pattern) to be transferred onto a surface of, for example, quartz glass, formed of chrome. The substrate 15 is, for example, single crystal silicon, and has a resist (photosensitive material) applied onto its surface. The control unit 11 controls each part within the exposure apparatus 1.

[0015] In the exposure apparatus 1, exposure light from a light source (not shown) passes through an illumination optical system 12 and illuminates an original 2 held on an original stage 13. The light transmitted through the original 2 is irradiated onto a substrate 15 via a projection optical system 14. At this time, light from a pattern formed on the original 2 forms an image on the surface of the substrate 15. The exposure apparatus 1 exposes a shot area on the substrate in this manner, and performs similar exposure on each of a plurality of shot areas.

[0016] Figure 2 is a schematic diagram of forming a step shape in a multilayer film. Figure 2(a) shows an example in which a multilayer film L is formed on a substrate 15, and a resist (photosensitive material) R is arranged on the +Z direction side of the multilayer film L. The multilayer film L is formed by alternately stacking a first film L1 and a second film L2, which have different dielectric constants. Also, the slope of the sidewall of the resist R arranged in Figure 2(a) is even.

[0017] First, as shown in Fig. 2(b), the resist R is trimmed to reduce its width. As a result, a portion of the multilayer film L on the +Z direction side is not covered by the resist R and is exposed. In this state, the multilayer film L is etched as shown in Fig. 2(c). At this time, the portion of the multilayer film L covered by the resist R is not etched because it is protected by the resist R. Therefore, only the exposed portion of the multilayer film L is etched, forming a one-step staircase shape.

[0018] Next, as shown in FIG. 2(d), the resist R is further trimmed. As a result, the width of the resist R is further reduced, and the exposed area of ​​the multilayer film L on the +Z direction side is increased. In this state, the multilayer film L is etched as shown in FIG. 2(e). As a result, only the exposed part of the multilayer film L is etched, and one more step shape is formed, and a step shape having three steps in height is formed in the multilayer film L. Finally, the resist R is removed as shown in FIG. 2(f). By this method, a step shape can be formed in the multilayer film L. Here, in the example of FIG. 2, the slope of the side wall part of the resist R arranged is not uneven, so that the variation in the width of the step surface of each step of the step shape can be reduced. Specifically, in FIG. 2(f), the widths V1 and V2 of the step surfaces can be made the same. Here, reducing the variation in the width of the step surface of each step of the step shape is the same as the width of the step surface of each step in the step shape being within a range (tolerance range) set by the user.

[0019] FIG. 3 is a schematic diagram showing how a step shape is formed in a multilayer film when the slope of the sidewall of the resist R is uneven. The slope of the sidewall of the resist R arranged in FIG. 3(a) is uneven. First, the width of the resist R is reduced by trimming it as shown in FIG. 3(b). As a result, a part of the +Z direction side of the multilayer film L is not covered by the resist R and is exposed. In this state, the multilayer film L is etched as shown in FIG. 3(c). At this time, the part of the multilayer film L covered by the resist R is not etched because it is protected by the resist R. Therefore, only the exposed part of the multilayer film L is etched, and a step shape of one step is formed.

[0020] Next, as shown in FIG. 3(d), the resist R is further trimmed. As a result, the width of the resist R is further reduced, and the exposed area of ​​the multilayer film L on the +Z direction side is increased. In this state, the multilayer film L is etched as shown in FIG. 3(e). As a result, only the exposed part of the multilayer film L is etched, and one more step shape is formed, and a step shape having three steps in height is formed in the multilayer film L. Finally, the resist R is removed as shown in FIG. 3(f). By this method, a step shape can be formed in the multilayer film L. Here, in the example of FIG. 3, the slope of the sidewall of the resist R arranged has unevenness, so the width of the step surface of each step of the step shape varies. Specifically, in FIG. 3(f), the widths V3 and V4 of the step surface cannot be made the same. In other words, as can be seen from FIG. 2 and FIG. 3, in order to reduce the variation in the width of the step surface of the step shape, it is necessary to suppress the unevenness in the slope of the sidewall of the resist R. In this embodiment, an original plate capable of suppressing the unevenness in the slope of the sidewall of the resist R is disclosed.

[0021] 4 is an example of the original plate 2 in this embodiment. The original plate 2 is provided with a main pattern 20 to be exposed on the resist R, and an auxiliary pattern 21 at a position spaced apart from the main pattern 20 by a distance 22 (a predetermined distance) and corresponding to the slope of the sidewall of the resist R. The auxiliary pattern 21 is provided for the purpose of suppressing unevenness in the slope of the sidewall of the resist R. A region 23 on the opposite side of the auxiliary pattern 21 to the distance 22 corresponds to the position of the slope of the sidewall of the resist R. By exposing the resist R using the original plate 2 in which the auxiliary pattern 21 and the distance 22 are appropriately set, unevenness in the slope of the sidewall of the resist R can be suppressed, and the slope of the sidewall of the resist R can be formed into a desired shape.

[0022] The pattern of the original 2 in this embodiment is determined based on information on the main pattern 20 and information on the desired inclination of the sidewall portion of the resist R. Furthermore, the pattern of the original 2 in this embodiment may be determined based on at least one of the exposure conditions, the exposure characteristics of the resist R, and the film thickness of the resist R in addition to the above information. Determining the pattern of the original 2 is specifically synonymous with determining the positional relationship between the main pattern 20 and the auxiliary pattern 21, or the shape of the auxiliary pattern 21, or the length of the interval 22. In other words, the auxiliary pattern 21 of the original 2 in this embodiment is provided at a position based on the above.

[0023] Here, the information on the main pattern 20 refers to, for example, the line width, transmittance, and position on the original 2 of the main pattern 20. Moreover, the exposure conditions refer to, for example, the wavelength of light from the light source, the wavelength characteristics of the light from the light source, the numerical aperture on the image plane side of the projection optical system 14, the light intensity distribution formed on the pupil plane of the projection optical system 14, the required exposure amount, focus, etc. Moreover, the exposure characteristics of the resist R refer to the degree of light absorption of the resist R, the photodecomposition speed of the resist R, and the refractive index of the resist R.

[0024] Here, a preferred example of the auxiliary pattern 21 in this embodiment will be described. For example, when the maximum thickness (length in the Z direction) t (nm) of the resist R is a thick film as shown in formula (1), the unevenness of the slope of the sidewall portion of the resist R can be suppressed by satisfying one or both of formulas (2) and (3).

[0025] By setting the ratio of the maximum thickness (length in the Z direction) t (nm) of the resist R to the width (length in the Y direction) w (nm) of the auxiliary pattern 21 as in formula (2), it is possible to suppress unevenness in the slope of the sidewall portion of the resist R. Specifically, it is sufficient that the width (length in the Y direction) w (nm) of the auxiliary pattern 21 relative to the maximum thickness (length in the Z direction) t (nm) of the resist R is 0.028 (2.8%) or less.

[0026] By setting the ratio of the maximum thickness (length in the Z direction) t (nm) of the resist R to the width (length in the Y direction) s (nm) of the gap 22 as shown in formula (3), it is possible to suppress unevenness in the slope of the sidewall of the resist R. Specifically, it is sufficient that the width (length in the Y direction) s (nm) of the gap 22 relative to the maximum thickness (length in the Z direction) t (nm) of the resist R is 0.028 (2.8%) or less. It is most preferable to satisfy both formulas (2) and (3), but even if only formula (3) is satisfied, the effect of suppressing unevenness in the slope of the sidewall of the resist R is high. t≧1000...Equation (1) w÷t≦0.028...Equation (2) s÷t≦0.028...Equation (3)

[0027] The maximum thickness (length in the Z direction) t (nm) of the resist R is determined according to the product to be manufactured. Therefore, by setting the auxiliary pattern 21 and the interval 22 of the master 2 so as to satisfy the above formula with the maximum thickness (length in the Z direction) t (nm) of the resist R as a reference, it is possible to further suppress unevenness in the slope of the sidewall portion of the resist R.

[0028] Fig. 5 shows the results of simulating the inclination of the sidewall of the resist R. Fig. 5(a) shows the results of simulating the inclination of the sidewall of the resist R when exposed using an original plate having only the main pattern 20 and no auxiliary pattern 21. Fig. 5(b) shows the results of simulating the inclination of the sidewall of the resist R when exposed using an original plate 2 having the main pattern 20, and the auxiliary pattern 21 and space 22 that satisfy formulas (1), (2), and (3). It can be seen that the inclination of the sidewall of the resist R shown in Fig. 5(b) is more effective at suppressing unevenness than the inclination of the sidewall of the resist R shown in Fig. 5(a).

[0029] 6 shows an example of a method for determining a pattern of the original 2 in this embodiment. First, the pattern of the original 2 is set (S100, pattern setting step). Specifically, the position of the auxiliary pattern 21 on the original 2 is set based on the position of the main pattern 20. This setting also sets the interval 22 and the area 23. In addition, in step S100, not only the position of the auxiliary pattern 21 on the original 2 but also the line width and transmittance of the auxiliary pattern 21 or the transmittance of the interval 22 may be set. Note that when step S100 is performed for the first time, the auxiliary pattern 21 and the interval 22 do not have to be set.

[0030] Next, an optical image is calculated (S110, image calculation step). The optical image in this embodiment is the light intensity distribution on the image plane when the original 2 is illuminated. In step S110, a simulation is performed by a computer or the like based on the pattern information of the original 2 set in step S100 (information on the main pattern 20, information on the auxiliary pattern 21, information on the interval 22, and information on the area 23), and the optical image is calculated. Here, in step S110, the optical image may be calculated based on the exposure conditions in addition to the pattern information of the original 2.

[0031] Next, the resist shape is calculated (S120, shape calculation step). In step S120, a simulation is performed by a computer or the like based on the optical image calculated in step S110 to calculate the shape of the resist R. Here, in step S120, the shape of the resist R may be calculated based on at least one of the exposure characteristics of the resist R and the film thickness of the resist R in addition to the optical image calculated in step S110.

[0032] Next, it is determined whether the resist shape calculated in step S120 is the desired resist shape (S130, determination step). The desired resist shape is the desired shape of the slope of the sidewall of the resist R. If the calculated resist shape is the desired resist shape in step S130, the pattern of the original 2 is determined (S140, pattern determination step), and the process ends. If the calculated resist shape is not the desired resist shape in step S130, the process returns to step S100, the pattern of the original 2 is set again, and the image calculation step of step S110 is performed again. Note that the pattern of the original 2 does not need to be determined by the method shown in FIG. 6, and it is not necessary to use all of the information used in the flowchart of FIG. 6, as long as the pattern of the original 2 that has the desired shape of the slope of the sidewall of the resist R can be determined. In addition, in step S130, even if the resist shape calculated in step S120 does not match the desired resist shape, it may be determined that the calculated resist shape is the desired resist shape as long as it is within the range of the deviation amount of the shape determined in advance by the user.

[0033] In addition, in the present embodiment, an example in which one main pattern 20 is provided on the original 2 has been described, but the number of main patterns provided on the original 2 is not particularly limited. FIG. 7 shows another example of the original 2 in the present embodiment. For example, as shown in FIG. 7(a), two main patterns 20 may be provided on the original 2, and auxiliary patterns 21 may be provided on both sides of each of the main patterns 20. Alternatively, as shown in FIG. 7(b), the auxiliary patterns 21 may be provided on one side of the main pattern 20, not on both sides. Furthermore, in the present embodiment, an example in which the auxiliary patterns 21 are provided at positions along the Y direction of the main pattern 20 has been described, but the auxiliary patterns 21 may be provided at positions along the X direction of the main pattern 20.

[0034] As described above, the master 2 of this embodiment has the auxiliary pattern 21 for suppressing unevenness in the slope of the sidewall of the resist R, which can suppress unevenness in the slope of the sidewall of the resist R. As a result, when a staircase shape is formed in the multilayer film L using the resist R exposed with the master 2, it is possible to reduce variations in the width of the step faces of each step of the staircase shape.

[0035] <Second embodiment> FIG. 8 shows an example of the pattern of the original and the resist shape in this embodiment. FIG. 8(a) shows an original 2a on which a main pattern 20a is provided and no auxiliary pattern is provided. FIG. 8(d) is a schematic diagram showing the shape of the resist R when exposed with the original 2a. FIG. 8(b) shows an original 2b on which a main pattern 20b and an auxiliary pattern 21b are provided. There is a gap 22b between the main pattern 20b and the auxiliary pattern 21b. FIG. 8(e) is a schematic diagram showing the shape of the resist R when exposed with the original 2b. FIG. 8(c) shows an original 2c on which a main pattern 20c and an auxiliary pattern 21c are provided. There is a gap 22c between the main pattern 20c and the auxiliary pattern 21c. FIG. 8(f) is a schematic diagram showing the shape of the resist R when exposed with the original 2b.

[0036] Here, the length A of the resist R1 in contact with the multilayer film L shown in Fig. 8(d) when exposed with the master 2a shown in Fig. 8(a) is different from the length B of the resist R2 in contact with the multilayer film L shown in Fig. 8(e) when exposed with the master 2b shown in Fig. 8(b). This is because the length in the Y direction of the resist R2 corresponding to the main pattern 20b becomes larger by providing the auxiliary pattern 21b.

[0037] In this embodiment, as shown in Fig. 8(c), an original 2c is used that has a main pattern 20c that takes into account (based on) the change in size of the resist (resist image) when an auxiliary pattern 21c is provided. As a result, the length A of contact with the multilayer film L of the resist R1 shown in Fig. 8(d) when exposed with the original 2a shown in Fig. 8(a) is the same as the length C of contact with the multilayer film L of the resist R3 shown in Fig. 8(f) when exposed with the original 2c shown in Fig. 8(c). As a result, the size of the main pattern 20 formed in the resist R can be made to be the desired size even if the auxiliary pattern 21 is provided.

[0038] <Third embodiment> The present embodiment is characterized in that an article is manufactured using the master described above.

[0039] 9 is a flowchart of a method for manufacturing an article in this embodiment. A material formation step (S210) is performed in which the above-mentioned master is used to form a resist R having an inclined sidewall on the upper side of the multilayer film L formed on the substrate 15. The master used in this step S210 has a main pattern 20 and an auxiliary pattern 21 arranged at a position spaced apart from the main pattern 20 by a distance 22 (a predetermined distance). In addition, the auxiliary pattern 21 suppresses unevenness of the sidewall of the resist R formed in step S210.

[0040] Next, a staircase forming step (S220) is performed in which a staircase shape is formed on the substrate 15 using the resist R formed in step S210, and a manufacturing step (S230) is performed in which an article is manufactured from the substrate 15 on which the staircase shape has been formed in the staircase forming step.

[0041] Products manufactured by this manufacturing method include, for example, semiconductor IC elements, liquid crystal display elements, color filters, MEMS, and the like.

[0042] In the staircase forming step, for example, a staircase shape is formed on the substrate by alternately repeating etching of the multilayer film L and reducing the width of the resist R. According to this manufacturing method, it is possible to manufacture an article of higher quality than before.

[0043] The disclosure of the present specification includes the following master, method for determining a pattern on a master, method for exposing, and method for manufacturing an article.

[0044] [Item 1] A master having a pattern formed thereon for use in exposing a photosensitive material disposed on an upper side of a multilayer film formed on a substrate, The pattern includes a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern, The original plate, wherein the auxiliary pattern suppresses unevenness in the inclination of a sidewall portion of the main pattern formed on the photosensitive material.

[0045] [Item 2] 2. The original plate according to item 1, wherein the auxiliary pattern is provided at a position based on information on the main pattern and information on a desired inclination.

[0046] [Item 3] The original plate described in item 2, characterized in that the auxiliary pattern is provided at a position based on at least one of the exposure conditions, the exposure characteristics of the photosensitive material, and the film thickness of the photosensitive material.

[0047] [Item 4] 4. The original plate according to any one of items 1 to 3, wherein the width of the predetermined interval is 2.8% or less of the maximum thickness of the photosensitive material.

[0048] [Item 5] 5. The original plate according to any one of items 1 to 4, wherein a width of the auxiliary pattern is 2.8% or less of a maximum thickness of the photosensitive material.

[0049] [Item 6] 6. The original plate according to any one of items 1 to 5, wherein the auxiliary patterns are provided on both sides of the main pattern.

[0050] [Item 7] 7. The original plate according to any one of items 1 to 6, wherein the main pattern is provided based on a change in size of the photosensitive material when the auxiliary pattern is provided.

[0051] [Item 8] an image calculating step of calculating an optical image which is a light intensity distribution on an image plane when an original plate having a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern is illuminated; a shape calculation step of calculating a shape of the photosensitive material when the photosensitive material is exposed by illuminating the original based on the optical image calculated in the image calculation step; a pattern determination step of determining a pattern of the original based on a result calculated in the shape calculation step; 13. A method for determining a pattern on an original, comprising:

[0052] [Item 9] a determining step of determining whether the shape of the photosensitive material calculated in the shape calculating step is a desired shape of the photosensitive material; When the shape of the photosensitive material is the desired shape of the photosensitive material, the pattern determination step is performed; 9. The method for determining a pattern of a reticle according to item 8, wherein, if the shape of the photosensitive material is not the desired shape of the photosensitive material, the image calculation step is performed again.

[0053] [Item 10] 10. The method for determining a pattern of an original according to item 8 or 9, wherein the image calculation step is performed based on at least one of information on the main pattern, information on the auxiliary pattern, information on a space between the main pattern and the auxiliary pattern, information on a region on the opposite side of the space across the auxiliary pattern, and exposure conditions.

[0054] [Item 11] 11. The method for determining a pattern on an original according to any one of items 8 to 10, wherein the shape calculation step is performed based on at least one of an exposure characteristic of the photosensitive material and a film thickness of the photosensitive material in addition to the optical image.

[0055] [Item 12] 10. The method for determining a pattern of an original according to item 9, wherein the desired shape of the photosensitive material is a shape in which unevenness in the slope of the sidewall portion of the main pattern formed on the photosensitive material is suppressed.

[0056] [Item 13] 1. An exposure method for exposing a photosensitive material disposed on an upper side of a multilayer film formed on a substrate, comprising the steps of: an exposure step of performing exposure using an original having a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern; The exposure method, wherein the auxiliary pattern suppresses unevenness in a slope of a sidewall portion of the main pattern formed on the photosensitive material by the exposure step.

[0057] [Item 14] a material forming step of forming a photosensitive material having a sloped sidewall portion on the upper side of the multilayer film formed on the substrate by using an original; a staircase forming step of forming a staircase shape on the substrate using the photosensitive material formed in the material forming step; a manufacturing step of manufacturing an article from the substrate on which the staircase shape is formed in the staircase forming step; having The original used in the material forming step has a main pattern and an auxiliary pattern arranged at a position spaced a predetermined distance from the main pattern. A method for producing an article.

[0058] [Item 15] 15. The method for manufacturing an article according to item 14, wherein the step of forming the staircase is performed by alternately repeating etching of the multilayer film and reducing the width of the photosensitive material.

[0059] [Item 16] Item 16. The method for manufacturing an article according to item 14 or 15, wherein a width of a step surface of each step in the staircase shape formed in the staircase forming step is within a range set by a user.

[0060] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention.

Claims

1. A master having a pattern formed thereon for use in exposing a photosensitive material disposed on an upper side of a multilayer film formed on a substrate, The pattern includes a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern, the auxiliary pattern is rectangular, and a length of a long side of one of the auxiliary patterns is equal to or longer than a length of a short side of a rectangular region in which the main pattern is arranged; The original plate, wherein the auxiliary pattern suppresses unevenness in the inclination of a sidewall portion of the main pattern formed on the photosensitive material.

2. 2. The original according to claim 1, wherein the auxiliary pattern is provided at a position based on information on the main pattern and information on a desired inclination of the sidewall portion.

3. 3. The original according to claim 2, wherein the auxiliary pattern is provided at a position based on at least one of an exposure condition, an exposure characteristic of the photosensitive material, and a film thickness of the photosensitive material.

4. 2. The original plate according to claim 1, wherein the width of the predetermined interval is 2.8% or less of the maximum thickness of the photosensitive material.

5. 2. The original according to claim 1, wherein a width of the auxiliary pattern is 2.8% or less of a maximum thickness of the photosensitive material.

6. The original according to claim 1 , wherein the auxiliary patterns are provided on both sides of the main pattern.

7. 2. The original according to claim 1, wherein the main pattern is provided based on a change in size of the photosensitive material when the auxiliary pattern is provided.

8. A master having a pattern formed thereon for use in exposing a photosensitive material disposed on an upper side of a multilayer film formed on a substrate, The pattern includes a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern, the auxiliary pattern is rectangular, and a length of a long side of one of the auxiliary patterns is equal to or longer than a length of a short side of a rectangular region in which the main pattern is arranged; a width of the predetermined interval being 2.8% or less of a maximum thickness of the photosensitive material;

9. A master having a pattern formed thereon for use in exposing a photosensitive material disposed on an upper side of a multilayer film formed on a substrate, The pattern includes a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern, the auxiliary pattern is rectangular, and a length of a long side of one of the auxiliary patterns is equal to or longer than a length of a short side of a rectangular region in which the main pattern is arranged; a width of the auxiliary pattern being 2.8% or less of a maximum thickness of the photosensitive material;

10. 1. An exposure method for exposing a photosensitive material disposed on an upper side of a multilayer film formed on a substrate, comprising the steps of: an exposure step of performing exposure using an original having a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern; the auxiliary pattern is rectangular, and a length of a long side of one of the auxiliary patterns is equal to or longer than a length of a short side of a rectangular region in which the main pattern is arranged; The exposure method, wherein the auxiliary pattern suppresses unevenness in a slope of a sidewall portion of the main pattern formed on the photosensitive material by the exposure step.

11. An exposure method for exposing a photosensitive material disposed on an upper side of a multilayer film formed on a substrate, comprising the steps of: an exposure step of performing exposure using an original having a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern; the auxiliary pattern is rectangular, and a length of a long side of one of the auxiliary patterns is equal to or longer than a length of a short side of a rectangular region in which the main pattern is arranged; An exposure method, characterized in that the width of the predetermined interval is 2.8% or less with respect to the maximum thickness of the photosensitive material.

12. An exposure method for exposing a photosensitive material disposed on an upper side of a multilayer film formed on a substrate, comprising the steps of: an exposure step of performing exposure using an original having a main pattern and an auxiliary pattern disposed at a position spaced a predetermined distance from the main pattern; the auxiliary pattern is rectangular, and a length of a long side of one of the auxiliary patterns is equal to or longer than a length of a short side of a rectangular region in which the main pattern is arranged; 13. An exposure method, comprising the steps of: forming a width of the auxiliary pattern that is equal to or smaller than 2.8% of a maximum thickness of the photosensitive material;

13. a material forming step of forming a photosensitive material having a sloped sidewall portion on the upper side of the multilayer film formed on the substrate by using an original; a staircase forming step of forming a staircase shape on the substrate using the photosensitive material formed in the material forming step; a manufacturing step of manufacturing an article from the substrate on which the staircase shape is formed in the staircase forming step; having the original used in the material forming step has a main pattern and an auxiliary pattern arranged at a position spaced a predetermined distance from the main pattern, the width of the predetermined interval is 2.8% or less of the maximum thickness of the photosensitive material; A method for producing an article.

14. The method for manufacturing an article according to claim 13, wherein the step of forming the staircase is performed by alternately repeating etching of the multilayer film and reducing the width of the photosensitive material.

15. The method for manufacturing an article according to claim 13, wherein a width of a step surface of each step in the staircase shape formed in the staircase forming step is within a range set by a user.

Images