Semiconductor device, temperature correction system, and alarm system

Abstract

[Problem] To provide a semiconductor apparatus in which it is possible to monitor the actual temperature of each semiconductor chip while driving a device. [Solution] A semiconductor apparatus of the present disclosure is provided with a semiconductor chip, a plurality of pad electrodes formed in the semiconductor chip, and an impedance element electrically connected between at least two of the plurality of pad electrodes. The semiconductor apparatus is configured such that the temperature of the semiconductor chip can be measured by providing, from outside the semiconductor chip, a certain electric signal between the at least two pad electrodes having the impedance element connected therebetween.

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device, a temperature correction system, and an alarm system. [Background technology]

[0002] Some semiconductor devices are equipped with a temperature sensor inside the device to measure the temperature inside the device. In this type of semiconductor device, the temperature measured by the temperature sensor may vary due to manufacturing variations, etc. In order to correct this individual device variation, the device temperature is measured by contacting a thermocouple with a pad electrode, and the temperature measured by the temperature sensor is corrected based on the measurement result (for example, see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-134318 A Summary of the Invention [Problem to be solved by the invention]

[0004] The problem with the above-mentioned temperature correction is temperature variation within the wafer surface. For this reason, it is necessary to measure the temperature for each semiconductor chip and perform temperature correction of the temperature sensor for each semiconductor chip. However, the conventional technology described in Patent Document 1, that is, the conventional technology of measuring the temperature within the wafer surface by contacting a thermocouple with a pad electrode, is unable to grasp the actual temperature for each semiconductor chip while the device is operating.

[0005] Therefore, the present disclosure aims to provide a semiconductor device that can grasp the actual temperature on a semiconductor chip basis while the device is operating, a temperature correction system for the semiconductor device, and an alarm system using the temperature correction system. [Means for solving the problem]

[0006] In order to achieve the above object, the semiconductor device of the present disclosure comprises: Semiconductor chips, A plurality of pad electrodes formed in a semiconductor chip; and and an impedance element electrically connected between at least two of the pad electrodes. A constant electrical signal is applied from outside the semiconductor chip between at least two pad electrodes to which an impedance element is connected, thereby making it possible to measure the temperature of the semiconductor chip.

[0007] In order to achieve the above object, the temperature correction system of the present disclosure comprises: A semiconductor device having a semiconductor chip equipped with a temperature sensor; A temperature measuring unit for measuring the temperature of the semiconductor chip; and A temperature correction unit that corrects the temperature measured by the temperature sensor. The semiconductor device includes a plurality of pad electrodes formed in a semiconductor chip, and an impedance element electrically connected between at least two of the plurality of pad electrodes, the temperature measuring unit measures the temperature of the semiconductor chip by applying a constant electric signal from outside the semiconductor chip between at least two pad electrodes to which the impedance element is connected; The temperature correction section corrects the temperature measured by the temperature sensor based on the temperature of the semiconductor chip measured by the temperature measurement section.

[0008] In order to achieve the above object, the alarm system of the present disclosure comprises: A semiconductor device having a semiconductor chip equipped with a temperature sensor; a temperature measuring unit for measuring the temperature of the semiconductor chip; A temperature correction unit that corrects the temperature measured by the temperature sensor; and Alarm section, And, The semiconductor device includes a plurality of pad electrodes formed in a semiconductor chip, and an impedance element electrically connected between at least two of the plurality of pad electrodes, the temperature measuring unit measures the temperature of the semiconductor chip by applying a constant electric signal from outside the semiconductor chip between at least two pad electrodes to which the impedance element is connected; The temperature correction unit corrects the temperature measured by the temperature sensor based on the temperature of the semiconductor chip measured by the temperature measurement unit; The alarm unit issues an alarm when it detects that the temperature corrected by the temperature correction unit exceeds a predetermined reference temperature. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a system configuration diagram showing an outline of a basic configuration of a CMOS image sensor, which is an example of a semiconductor device according to the present disclosure. [Diagram 2] FIG. 2 is a circuit diagram showing an example of a circuit configuration of a pixel. [Diagram 3] FIG. 3A is a diagram showing an example of the actual temperature at the site of each semiconductor chip in a wafer, and FIG. 3B is an explanatory diagram of measurement of the wafer in-plane temperature by a thermocouple. [Figure 4] FIG. 4A is a diagram showing the relationship between a semiconductor chip to be measured on a wafer and a probe needle in a semiconductor device according to the first embodiment of the present disclosure, and FIG. 4B is a diagram showing a configuration in which a constant electrical signal is applied through the probe needle between two pad electrodes to which a resistive element is connected to measure temperature. [Diagram 5] FIG. 5A is a circuit diagram showing a configuration example of temperature measurement according to the first embodiment, and FIG. 5B is a diagram showing an example of the relationship between the temperature and the value of a current flowing through a resistance element. [Figure 6] FIG. 6A is a circuit diagram showing an example of a configuration for temperature measurement according to a second embodiment, and FIG. 6B is a circuit diagram showing an example of a configuration for temperature measurement according to a third embodiment. [Figure 7] FIG. 7 is a diagram illustrating an example of an arrangement structure of pad electrodes according to the fourth embodiment. [Figure 8]FIG. 8 is a diagram illustrating an example of an arrangement structure of pad electrodes according to the fifth embodiment. [Figure 9] FIG. 9 is a diagram illustrating an example of an arrangement structure of pad electrodes according to the sixth embodiment. [Figure 10] FIG. 10 is a diagram showing an example of an arrangement structure of pad electrodes according to the seventh embodiment. [Figure 11] FIG. 11 is a diagram showing an example of an arrangement structure of pad electrodes according to the eighth embodiment. [Figure 12] FIG. 12 is a diagram showing an example of an arrangement structure of pad electrodes according to the ninth embodiment. [Figure 13] FIG. 13A is a diagram showing an arrangement of pad electrodes according to an application example (part 1), and FIG. 13B is a diagram showing an arrangement of pad electrodes according to an application example (part 2). [Figure 14] FIG. 14 is a diagram showing other locations of the pad electrodes for temperature measurement. [Figure 15] FIG. 15 is an exploded perspective view showing a stacked semiconductor chip structure. [Figure 16] FIG. 16 is a system configuration diagram showing an example of a system configuration of a temperature correction system according to the second embodiment of the present disclosure. [Figure 17] FIG. 17 is a system configuration diagram showing an example of a system configuration of an alarm system according to the third embodiment of the present disclosure. [Figure 18] FIG. 18 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology according to the present disclosure can be applied. [Figure 19] FIG. 19 is a diagram showing an example of the installation positions of imaging devices in a mobile object control system. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, a form for carrying out the technology according to the present disclosure (hereinafter, referred to as "embodiment") will be described in detail with reference to the drawings. The technology according to the present disclosure is not limited to the embodiment, and various numerical values ​​in the embodiment are merely examples. In the following description, the same reference numerals will be used for the same elements or elements having the same functions, and duplicated description will be omitted. The description will be given in the following order. 1. General description of the semiconductor device, temperature correction system, and alarm system of the present disclosure 2. Semiconductor device to which the technology of the present disclosure is applied (example of imaging device) 2-1.Example of CMOS image sensor configuration 2-2. Example of pixel configuration 2-3. Chip structure 2-4. Measuring wafer surface temperature using thermocouples 3. First embodiment (example of semiconductor device) 3-1. Example 1 (Example of measuring temperature by applying a constant voltage to a resistive element) 3-2. Example 2 (Example of measuring temperature by passing a constant current through a resistive element) 3-3. Example 3 (Modification of Example 1: Example in which a reference resistance element is provided in the measurement system) 3-4. Example 4 (Example of the arrangement of pad electrodes to which resistor elements are connected) 3-5. Fifth embodiment (modification of the fourth embodiment: an example in which the size of two pad electrodes to which a resistive element is connected is larger than the size of the other pad electrodes) 3-6. Sixth embodiment (modification of the fourth embodiment: an example in which the size of two pad electrodes to which a resistive element is connected is smaller than the size of the other pad electrodes) 3-7. Example 7 (Modification of Example 4: Example in which two pad electrodes to which a resistive element is connected are arranged with another pad electrode sandwiched therebetween) 3-8. Example 8 (Modification of Example 4: Example in which each of the two pad electrodes to which the resistance element is connected is configured with a plurality of pad electrodes) 3-9. Example 9 (Modification of Example 8: Example in which the number of pad electrodes to which the resistance element is connected is set to three) 3-10. Example 10 (Application of two pad electrodes) 3-11. Modification of the first embodiment 3-12.Stacked semiconductor chip structure 4. Second embodiment (example of temperature correction system) 5. Third embodiment (example of alarm system) 6. Application Examples of the Technology Disclosed Herein (Application Examples to Mobile Objects) 7. Configurations that the present disclosure can take

[0011] <General Description of Semiconductor Device, Temperature Correction System, and Alarm System of the Present Disclosure> In the semiconductor device, temperature correction system, and alarm system of the present disclosure, the impedance element may be configured to be an element having temperature dependency, preferably a resistive element.

[0012] Furthermore, in the semiconductor device of the present disclosure including the above-mentioned preferred configuration, the semiconductor chip may be configured to include a temperature sensor mounted thereon for measuring the temperature inside the device.

[0013] In the semiconductor device of the present disclosure including the above-mentioned preferred configuration, the size of at least two pad electrodes connected to the impedance element may be larger than the size of the other pad electrodes, or the size of at least two pad electrodes connected to the impedance element may be smaller than the size of the other pad electrodes.

[0014] Furthermore, in the semiconductor device of the present disclosure including the above-mentioned preferred configuration, at least two pad electrodes connected to an impedance element may be configured to sandwich another pad electrode, or at least two pad electrodes connected to an impedance element may be configured to be composed of a plurality of pad electrodes adjacent to each other and electrically connected to each other.

[0015] In addition, in the semiconductor device of the present disclosure including the above-mentioned preferred configuration, the number of pad electrodes to which the impedance element is connected may be 3 or more, and the wiring electrically connecting the three or more pad electrodes and the impedance element may be configured to have the same conductor length, conductor material, wire diameter, and electrical resistance.

[0016] Furthermore, in the semiconductor device of the present disclosure including the above-mentioned preferred configuration, the semiconductor device may be configured as an imaging device having a semiconductor chip with a stacked structure in which a first semiconductor chip and a second semiconductor chip are stacked and electrically connected to each other. At this time, the first semiconductor chip may be configured to have a pixel array section in which pixels are arranged, and the second semiconductor chip may be configured to have a peripheral circuit section of the pixel array section. And, regarding the impedance element, at least two pad electrodes provided on the first semiconductor chip and connected to the impedance element may be configured to be provided on the second semiconductor chip.

[0017] In the temperature correction system and alarm system of the present disclosure, which include the preferred configurations described above, the temperature measurement unit can be configured to apply a constant voltage to a resistive element and calculate the temperature of the semiconductor chip from the current value flowing through the resistive element, or to pass a constant current through the resistive element and calculate the temperature of the semiconductor chip from the voltage value across the resistive element.

[0018] <Semiconductor device to which the technology according to the present disclosure is applied> An example of a semiconductor device to which the technology according to the present disclosure is applied is an imaging device. Here, a CMOS (Complementary Metal Oxide Semiconductor) image sensor, which is a type of XY address type imaging device, is taken as an example of the imaging device to be described. The CMOS image sensor is an image sensor that is manufactured by applying or partially using a CMOS process.

[0019] [Example of CMOS image sensor configuration] FIG. 1 is a system configuration diagram showing an outline of a basic configuration of a CMOS image sensor, which is an example of a semiconductor device according to the present disclosure.

[0020] The CMOS image sensor 1 according to this example has a configuration in which a pixel array section 11 and a peripheral circuit section of the pixel array section 11 are integrated on a semiconductor chip (semiconductor substrate) 10. In the pixel array section 11, pixels 20 including photoelectric conversion elements that generate photocharges of an amount corresponding to the amount of incident light are arranged two-dimensionally in row and column directions, that is, in a matrix. Here, the row direction refers to the arrangement direction of the pixels 20 in a pixel row, that is, the direction along the pixel row (so-called horizontal direction), and the column direction refers to the arrangement direction of the pixels 20 in a pixel column, that is, the direction along the pixel column (so-called vertical direction).

[0021] The peripheral circuit section of the pixel array section 11 is composed of various circuit sections, such as a row selection section 12, a column processing section 13, a logic circuit section 14, and a timing control section 15. The functions of the row selection section 12, the column processing section 13, the logic circuit section 14, and the timing control section 15 will be described below.

[0022] The row selection unit 12 is composed of a shift register, an address decoder, etc., and controls scanning of pixel rows and addresses of pixel rows when selecting each pixel 20 in the pixel array unit 11. Although the specific configuration of the row selection unit 12 is not shown in the figure, the row selection unit 12 is generally configured to have two scanning systems, a read scanning system and a sweep scanning system.

[0023] The readout scanning system sequentially selects and scans the pixels 20 in the pixel array unit 11 row by row to read out pixel signals from the pixels 20. The pixel signals read out from the pixels 20 are analog signals. The sweep scanning system performs sweep scanning on the readout row to be read out scanned by the readout scanning system, prior to the readout scanning by the shutter speed.

[0024] The sweep-out scanning by this sweep-out scanning system sweeps out unnecessary charges from the photoelectric conversion units of the pixels 20 in the readout row, thereby resetting the photoelectric conversion units. Then, by sweeping out (resetting) the unnecessary charges by this sweep-out scanning system, a so-called electronic shutter operation is performed. Here, the electronic shutter operation refers to the operation of discarding the photoelectric charges in the photoelectric conversion units and starting a new exposure (starting the accumulation of photoelectric charges).

[0025] The pixel signals read out from each pixel 20 in the pixel row selected by the row selection unit 12 are supplied for each pixel column to a column processing unit 13. The column processing unit 13 is configured to include, for example, an analog-to-digital converter (ADC) that converts the analog pixel signals output from the pixels 20 into digital pixel signals.

[0026] As the analog-digital converter in the column processing unit 13, for example, a single-slope analog-digital converter, which is an example of a reference signal comparison type analog-digital converter, can be used. However, the analog-digital converter is not limited to the single-slope analog-digital converter, and a successive approximation type analog-digital converter, a delta-sigma modulation type (ΔΣ modulation type) analog-digital converter, etc. can be used.

[0027] The logic circuit unit 14 has, for example, a calculation processing function and the like, and executes predetermined signal processing on pixel signals read out from each pixel 20 of the pixel array unit 11 through the column processing unit 13, and outputs the processed signal.

[0028] The timing control unit 15 generates various timing signals, clock signals, control signals, etc., and controls the driving of the row selection unit 12, the column processing unit 13, the logic circuit unit 14, etc. based on these generated signals.

[0029] An imaging device represented by the CMOS image sensor 1 having the above configuration is equipped with a temperature sensor 16 inside the device in order to measure the temperature inside the device. The temperature sensor 16 is configured to generate the temperature inside the device using, for example, a technique similar to that of a well-known bandgap voltage reference circuit.

[0030] The temperature sensor 16 for measuring the temperature inside the device is preferably formed within the region in which the peripheral circuitry of the pixel array section 11 is formed. In the CMOS image sensor 1, the part in the peripheral circuitry that becomes hot during device operation is considered to be, for example, the column processing section 13. Therefore, in this example, the temperature sensor 16 is formed within the region in which the column processing section 13 is formed.

[0031] [Pixel circuit configuration example] 2 is a circuit diagram showing an example of a circuit configuration of the pixel 20. The pixel 20 has, for example, a photodiode 21 as a photoelectric conversion element (light receiving element). The pixel 20 has a pixel configuration including a transfer transistor 22, a reset transistor 23, an amplification transistor 24, and a selection transistor 25 in addition to the photodiode 21.

[0032] In this embodiment, for example, N-channel MOS field effect transistors (FETs) are used as the four transistors, namely, the transfer transistor 22, the reset transistor 23, the amplifying transistor 24, and the selection transistor 25. However, the combinations of the conductivity types of the four transistors 22 to 25 illustrated here are merely examples, and are not limited to these combinations.

[0033] The pixel 20 is supplied with a transfer signal TRG, a reset signal RST, and a selection signal SEL from the row selection unit 12 described above as appropriate.

[0034] The photodiode 21 has an anode electrode connected to a low potential power supply (for example, ground), and photoelectrically converts received light into photocharges (here, photoelectrons) with an amount of charge corresponding to the amount of light, and accumulates the photocharges. The cathode electrode of the photodiode 21 is electrically connected to the gate electrode of the amplification transistor 24 via the transfer transistor 22. Here, the region electrically connected to the gate electrode of the amplification transistor 24 is a floating diffusion (floating diffusion region / impurity diffusion region) FD. The floating diffusion FD is a charge-voltage converter that converts charge into voltage.

[0035] A high level (e.g., V DD A transfer signal TRG in which a signal level (signal level) becomes active is provided from the row selection unit 12. Then, the transfer transistor 22 becomes conductive in response to the transfer signal TRG, and transfers the photoelectric charge that has been photoelectrically converted by the photodiode 21 and accumulated in the photodiode 21 to the floating diffusion FD.

[0036] The reset transistor 23 is connected to the high-potential power supply voltage V DD A reset signal RST, which is active at a high level, is applied to the gate electrode of the reset transistor 23 from the row selection unit 12. In response to the reset signal RST, the reset transistor 23 becomes conductive and transfers the charge of the floating diffusion FD to a voltage V DD Reset the floating diffusion FD by dumping it into the node.

[0037] The gate electrode of the amplifier transistor 24 is connected to the floating diffusion FD, and the drain electrode is connected to the high-potential power supply voltage V DDThe amplification transistor 24 serves as an input section of a source follower that reads out a signal obtained by photoelectric conversion in the photodiode 21. That is, the source electrode of the amplification transistor 24 is connected to the vertical signal line VSL via the selection transistor 25. The amplification transistor 24 and a current source I connected to one end of the vertical signal line VSL configure a source follower that converts the voltage of the floating diffusion FD into the potential of the vertical signal line VSL.

[0038] The selection transistor 25 has a drain electrode connected to the source electrode of the amplification transistor 24 and a source electrode connected to the vertical signal line VSL. A selection signal SEL, which becomes active at a high level, is provided to a gate electrode of the selection transistor 25 from the row selection unit 12. Then, the selection transistor 25 becomes conductive in response to the selection signal SEL, sets the pixel 20 to a selected state, and transmits a signal output from the amplification transistor 24 to the vertical signal line VSL.

[0039] In this example, the pixel circuit of the pixel 20 is configured as a 4Tr configuration consisting of four transistors (Tr), that is, a transfer transistor 22, a reset transistor 23, an amplification transistor 24, and a selection transistor 25, but the present invention is not limited to this. For example, the selection transistor 25 can be omitted and a 3Tr configuration can be used in which the amplification transistor 24 has the function of the selection transistor 25, or a 5Tr or more configuration can be used in which the number of transistors is increased as necessary.

[0040] [About semiconductor chip structure] The semiconductor chip structure of the above-mentioned CMOS image sensor 1 is a so-called flat structure, as is clear from Fig. 1. The flat structure is a chip structure in which the peripheral circuit section of the pixel array section 11, i.e., the row selection section 12, the column processing section 13, the logic circuit section 14, the timing control section 15, etc., are formed on the same semiconductor chip (semiconductor substrate) 10 as the pixel array section 11 in which the pixels 20 are arranged.

[0041] The semiconductor chip structure of the CMOS image sensor 1 is not limited to a flat structure, but may be a so-called stacked structure. The stacked structure is a chip structure in which a peripheral circuit section of the pixel array section 11 is formed on at least one semiconductor substrate different from the semiconductor substrate on which the pixel array section 11 is formed. According to this stacked structure, the first-layer semiconductor substrate only needs to have a size (area) large enough to form the pixel array section 11, so that the size of the first-layer semiconductor substrate and, in turn, the size of the entire chip can be reduced. Furthermore, since a process suitable for manufacturing the pixels 20 can be applied to the first-layer semiconductor substrate and a process suitable for manufacturing the circuit section can be applied to the other semiconductor substrates, there is also an advantage that the process can be optimized when manufacturing the CMOS image sensor 1.

[0042] [Measuring wafer surface temperature using thermocouples] Incidentally, an example of the use of an imaging device typified by a CMOS image sensor is an in-vehicle image sensor that is mounted on a vehicle and captures images outside the vehicle, etc. However, the in-vehicle image sensor is only one example, and the use is not limited to in-vehicle use.

[0043] In-vehicle image sensors are equipped with a temperature sensor (thermometer) inside the device as a safety feature to stop the system function when it reaches an upper limit temperature. In particular, in high temperature ranges, a high measurement accuracy of ±1 degree is required for the temperature sensor. Therefore, in order to correct the individual variation of devices, for example, as shown in FIG. 3A, a wafer 102 on which semiconductor chips 101 are arranged is contacted with a thermocouple 103 as shown in FIG. 3B to measure the temperature of the device, and the temperature measured by the temperature sensor is corrected based on the measurement result.

[0044] The problem with this temperature correction is the temperature variation within the wafer surface. For this reason, it is necessary to measure the temperature for each semiconductor chip and correct the temperature measured by the temperature sensor for each semiconductor chip. However, in the conventional technology of measuring the temperature within the wafer surface by contacting a thermocouple with the pad electrode described above, it is not possible to grasp the actual temperature for each semiconductor chip while driving the device. As a result, the difference between the set temperature and the actual temperature of the wafer prober becomes a temperature correction error, which is a problem in achieving an accuracy of ±1 degree, especially in the high temperature range. Note that FIG. 3A shows the actual temperatures (e.g., 123 degrees, 125 degrees, and 127 degrees) of each semiconductor chip 101 in the wafer 102 when the set temperature of the wafer prober is, for example, 125 degrees.

[0045] First Embodiment An imaging device which is an example of a semiconductor device according to the first embodiment of the present disclosure, specifically, a CMOS image sensor 1 incorporating a temperature sensor 16 for measuring the temperature inside the device, makes it possible to grasp (measure) the actual temperature on a semiconductor chip basis (hereinafter sometimes simply abbreviated as "chip basis") while the device is operating.

[0046] In order to enable the actual temperature to be grasped on a chip-by-chip basis, the CMOS image sensor 1 according to this embodiment is configured such that an impedance element is electrically connected between at least two of the multiple pad electrodes formed in the semiconductor chip 10. When measuring the actual temperature of the semiconductor chip 10, a constant electric signal (a constant voltage or a constant current) is applied from outside the semiconductor chip 10 between the at least two pad electrodes to which the impedance element is connected.

[0047] As shown in Fig. 4A, an element having temperature dependency, for example, a resistor element 31, can be used as an impedance element mounted in the semiconductor chip 10. Then, as shown in Fig. 4B, in each semiconductor chip 10 in the wafer 102, a pad electrode 32 to which the resistor element 31 is connected is _1 ,32 _2 In between, probe needle 33 (33 _1 ,33_2 ) to apply a constant electrical signal (constant voltage or constant current). As a result, since the resistance element 31 has temperature dependency, it is possible to measure a current or voltage proportional to the actual temperature for each semiconductor chip 10 in the wafer 102 on a chip-by-chip basis.

[0048] Although a resistor element is used as an example of an element to be mounted inside the semiconductor chip 10 for temperature measurement, the element is not limited to a resistor element, and an impedance element such as a diode may be used instead. _3 Includes 33 probe needles _3 A clock, voltage, etc. are provided through this.

[0049] As described above, it is possible to measure the actual temperature on a chip-by-chip basis while driving the device by applying a constant electric signal (constant voltage or constant current) from outside the semiconductor chip 10 to, for example, the resistor element 31 mounted inside the semiconductor chip 10 for temperature measurement and measuring the current or voltage proportional to the actual temperature of the semiconductor chip 10. In addition, by using the resistor element 31 mounted inside the semiconductor chip 10 as a sensor, it is possible to measure the actual temperature of the semiconductor chip 10 even in the assembled product as the CMOS image sensor 1.

[0050] A specific embodiment will be described below in which a resistive element 31 is mounted as an impedance element within the semiconductor chip 10 and the actual temperature of the semiconductor chip 10 is measured on a chip-by-chip basis.

[0051] [Example 1] Example 1 is an example in which a constant voltage is applied to the resistive element 31 to measure the actual temperature of the semiconductor chip 10. An example of a configuration for temperature measurement according to Example 1 is shown in Fig. 5A. Also, an example of the relationship between the value of the current flowing through the resistive element 31 and the temperature TJ is shown in Fig. 5B. However, the relationship in Fig. 5B, in which the current value decreases as the temperature TJ increases, is merely an example, and the present invention is not limited to this relationship.

[0052] As shown in FIG. 5A, in the temperature measurement according to the first embodiment, the pad electrode 32 to which the resistance element 31 is connected _1 ,32 _2 A constant voltage Vin is applied between the resistor element 31 and the resistor 32. meas is measured by the ammeter 42. As a result, the ammeter 42 measures a current value I meas This current value I meas reflects the properties of the resistive material of the resistive element 31.

[0053] As described above, in the temperature measurement according to the first embodiment, a constant voltage V in By applying a current I meas The measured current value I meas From this, it is possible to calculate the temperature inside the semiconductor chip 10. The calculated temperature can then be used as a correction temperature for the temperature measured by the temperature sensor 16 (see FIG. 1) mounted on the semiconductor chip 10 of the CMOS image sensor 1.

[0054] [Example 2] The second embodiment is an example in which the actual temperature of the semiconductor chip 10 is measured by passing a constant current through the resistance element 31. An example of the configuration for temperature measurement according to the second embodiment is shown in FIG.

[0055] As shown in FIG. 6A, in the temperature measurement according to the second embodiment, a current is applied from the current source 43 to the pad electrode 32. _1 A constant current I force flows through the resistor element 31 and the pad electrode 32 _1 ,32 _2 The voltage value between both ends of the resistor element 31 is measured by a voltmeter 44 connected between the resistor element 31 and the resistor 31. As a result, the voltmeter 44 measures a voltage value V meas This voltage value V meas reflects the properties of the resistive material of the resistive element 31.

[0056] As described above, in the temperature measurement according to the second embodiment, a constant current I force By passing a current through the resistor element 31, a voltage value V that reflects the properties of the resistance material of the resistor element 31, which has temperature dependency, is generated. meas The measured voltage value V meas From this, it is possible to calculate the temperature inside the semiconductor chip 10. The calculated temperature can then be used as a correction temperature for the temperature measured by the temperature sensor 16.

[0057] [Example 3] Example 3 is a modification of Example 1, and is an example in which a reference resistance element is provided in the measurement system. An example of the configuration for temperature measurement according to Example 3 is shown in FIG.

[0058] As shown in FIG. 6B, in the temperature measurement according to the third embodiment, the ammeter 42 and the pad electrode 32 in the measurement system according to the first embodiment are _1 Considering the presence of a resistance component 45 of the measurement system between the pad electrode 32 and _1 ,32 _2 The reference resistor element 46 is connected between the pad electrode 32 and the measurement system 32. The reference resistor element 46 is connected between the pad electrode 32 and the measurement system 32 because the measurement accuracy decreases when the influence of the resistance component 45 of the measurement system outside the semiconductor chip 10 becomes large. _1 ,32 _2 is inserted in between.

[0059] In the case of temperature measurement according to the third embodiment having the above configuration, the current value I reflecting the properties of the resistance material of the resistance element 31 having temperature dependency is basically the same as in the case of temperature measurement according to the first embodiment. meas Measure the current value I meas From this, it is possible to calculate the temperature inside the semiconductor chip 10. In particular, in the temperature measurement according to the third embodiment, by inserting the reference resistive element 46, it is possible to calculate the resistance value of the resistive component 45 of the measurement system and perform measurement taking into account the presence of the resistive component 45.

[0060] [Example 4] Example 4 is an example of the layout structure of pad electrodes to which the resistive element 31 is connected. An example of the layout structure of pad electrodes according to Example 4 is shown in FIG.

[0061] 7, in the semiconductor chip 10 of the CMOS image sensor 1, pad electrode groups 17A and 17B consisting of a set of pad electrodes used for inputting and outputting various signals are provided at, for example, both ends in the row direction. The pad electrodes of these pad electrode groups 17A and 17B can be used as pad electrodes to which a resistance element 31 is connected. In this example, two electrodes A and B at the ends of the pad electrode group 17A are used as two pad electrodes 32 to which a resistance element 31 is connected. _1 ,32 _2 I try to use it as such.

[0062] In the pad electrode arrangement structure according to the fourth embodiment, two pad electrodes 32 _1 ,32 _2 However, the pad electrodes of the pad electrode group 17A may be used, and the pad electrodes of the pad electrode group 17B may be used, and are not limited to the pad electrodes at the ends of the pad electrode groups 17A and 17B, but may be intermediate pad electrodes. Also, the number of pad electrodes to which the resistance element 31 is connected is two, but is not limited to two as long as the pad electrodes are electrically connected to each other, and the number of pad electrodes is arbitrary.

[0063] [Example 5] Example 5 is a modification of Example 4, in which the size of two pad electrodes to which a resistive element is connected is larger than the size of the other pad electrodes. An example of the arrangement of pad electrodes according to Example 5 is shown in FIG.

[0064] As shown in FIG. 8, in the pad electrode arrangement structure according to the fifth embodiment, the two pad electrodes 32 to which the resistor element 31 is connected are _1 ,32 _2 The size of the pad electrode 32 to which a clock or the like is applied from outside the chip is set to be smaller than that of the pad electrode 32 in the pad electrode group 17A. _3 The size of the configuration is set larger than that of the

[0065] In this manner, the two pad electrodes 32 to which the resistor element 31 is connected _1 ,32 _2 By enlarging the size of the pad electrodes 32 to be larger than the size of the other pad electrodes, the two pad electrodes 32 _1 ,32 _2 The resistance value of the pad electrode can be made lower than the resistance values ​​of the other pad electrodes.

[0066] [Example 6] Example 6 is a modification of Example 4, and is an example in which the size of two pad electrodes to which the resistive element 31 is connected is smaller than the size of the other pad electrodes. An example of the arrangement structure of the pad electrodes according to Example 6 is shown in FIG.

[0067] As shown in FIG. 9, in the pad electrode arrangement structure according to the sixth embodiment, the two pad electrodes 32 to which the resistor element 31 is connected are _1 ,32 _2 The size of the pad electrode 32 to which a clock or the like is applied from outside the chip is set to be smaller than that of the pad electrode 32 in the pad electrode group 17A. _3 The size of the configuration is set smaller than that of the

[0068] In this manner, the two pad electrodes 32 to which the resistor element 31 is connected _1 ,32 _2 By reducing the size of the pad electrodes 32 in the formation region of the pad electrode group 17A, the size of the pad electrodes 32 in the formation region of the pad electrode group 17A is reduced compared to the size of the other pad electrodes. _1 ,32 _2 The area occupied by the

[0069] [Example 7] Example 7 is a modification of Example 4, and is an example in which two pad electrodes to which a resistive element is connected are arranged with another pad electrode sandwiched therebetween. An example of the arrangement structure of the pad electrodes according to Example 7 is shown in FIG.

[0070] As shown in FIG. 10, in the arrangement of the pad electrodes according to the seventh embodiment, the two pad electrodes 32 to which the resistor element 31 is connected are_1 ,32 _2 , and the other pad electrodes in the pad electrode group 17A, for example, the two pad electrodes 32 _4 ,32 _5 The structure is arranged with the above in between.

[0071] In this manner, the two pad electrodes 32 to which the resistor element 31 is connected _1 ,32 _2 By arranging the pad electrodes 32 and 33 between other pad electrodes in the pad electrode group 17A, _1 ,32 _2 Since the distance between the two pad electrodes 32 can be increased, it is possible to measure the temperature over a wider area than when the pad electrodes 32 are provided adjacent to each other. _1 ,32 _2 Although the number of pad electrodes sandwiched between the pads is two, this is merely an example and the number is not limited to two.

[0072] [Example 8] Example 8 is a modification of Example 4, and is an example in which each of two pad electrodes to which a resistance element is connected is configured with a plurality of pad electrodes. An example of the arrangement structure of the pad electrodes according to Example 8 is shown in FIG.

[0073] As shown in FIG. 11, in the pad electrode arrangement structure according to the eighth embodiment, the two pad electrodes 32 to which the resistor element 31 is connected are _1 ,32 _2 Each of these is configured to be adjacent to and electrically connected to one another in the pad electrode group 17A.

[0074] In this example, in the pad electrode group 17A, adjacent pad electrodes 32 _1 and pad electrode 32 _4 are electrically connected to each other, and the resistor element 31 is connected to two pad electrodes (32 _1 ,32 _2 ) is used as one of the pad electrodes 32 adjacent to each other. _2 and pad electrode 32 _5and is electrically connected to be used as the other of the two pad electrodes to which the resistance element 31 is connected.

[0075] In this example, each of the two pad electrodes to which the resistive element 31 is connected is configured to consist of two pad electrodes that are adjacent to each other and electrically connected to each other in the pad electrode group 17A, but this is not limited to this and the number of pad electrodes is arbitrary.

[0076] In this manner, the two pad electrodes 32 to which the resistor element 31 is connected _1 ,32 _2 By configuring each of the pad electrodes 32 as a plurality of pad electrodes, it is equivalent to enlarging the size of each electrode. _1 ,32 _2 The resistance value of each of the resistor elements 31 and 32 can be made lower than that of the resistor element 31 composed of one pad electrode. Also, by increasing the number of pad electrodes, it is possible to offset the influence of the resistance of the conductors other than the resistor element 31, thereby improving the accuracy of the temperature measurement.

[0077] [Example 9] Example 9 is a modification of Example 8, in which the number of pad electrodes to which the resistance elements are connected is set to 3 or more. An example of the arrangement of pad electrodes according to Example 9 is shown in FIG.

[0078] As shown in FIG. 12, in the arrangement of the pad electrodes according to the ninth embodiment, the number of pad electrodes to which the resistance element 31 is connected is set to three or more. For example, the number of pad electrodes 32 _1 , pad electrode 32 _2 , and pad electrode 32 _6 It is composed of three parts:

[0079] Three or more, for example, three pad electrodes 32 _1 , pad electrode 32 _2 , and pad electrode 32 _6 The wiring that electrically connects the resistor element 31 to the resistor element 32 is, for example, a meander wiring, and the like, and the conductor length (L _1 ,L _2 ,L_3 ), the conductor material, wire diameter, and electrical resistance should be the same (for example, the conductor length should be L _1 =L _2 =L _3 Here, the term "equal" includes not only strictly equal but also substantially equal, and various variations that occur during design or manufacturing are allowed.

[0080] In this way, the three pad electrodes 32 _1 , pad electrode 32 _2 , and pad electrode 32 _6 In the above, by making the conductor length, conductor material, wire diameter, and electrical resistance of the wiring electrically connected to the resistance element 31 equal, the influence of the conductor resistance can be canceled, thereby improving the accuracy of temperature measurement.

[0081] [Example 10] The tenth embodiment is an application example of two pad electrodes to which a resistive element is connected. In the first to ninth embodiments, the two pad electrodes 32 to which the resistive element 31 is connected are _1 ,32 _2 Regarding the above, a case has been described in which the pad electrode is used exclusively for measuring the temperature of the semiconductor chip 10 of the CMOS image sensor 1 in order to improve the measurement accuracy of the temperature sensor 16.

[0082] In the tenth embodiment, two pad electrodes 32 _1 ,32 _2 An application example other than the pad electrode dedicated to temperature measurement will be described below. The layout structure of the pad electrodes according to the application example (1) is shown in FIG. 13A, and the layout structure of the pad electrodes according to the application example (2) is shown in FIG.

[0083] The application example (part 1) shown in FIG. 13A includes a resistor element 31 and two pad electrodes 32. _1 ,32 _2 This is an example of using the above-mentioned as an overheating detector. _1 ,32 _2The wiring connecting the resistor element 31 and the analog-to-digital converter 50 (50) provided in the column processing section 13 (see FIG. 1) in the semiconductor chip 10 is connected to the _1 ,50 _2 ) and an analog-to-digital converter 50 _1 ,50 _2 In the above, two pad electrodes 32 _1 ,32 _2 By processing the voltage across the resistive element 31 when a current is passed through it, overheating within the semiconductor chip 10 can be detected.

[0084] The application example (part 2) shown in FIG. 13B has two pad electrodes 32 _1 ,32 _2 and a switch 52 between the resistor element 31 _1 ,52 _2 This is an example in which a resistor element 31 for measuring temperature is connected to two pad electrodes 32. _1 ,32 _2 52 switch elements, for example CMOS switches _1 ,52 _2 By electrically isolating the two pad electrodes 32 _1 ,32 _2 During normal driving, the two pad electrodes 32 _1 ,32 _2 If these are treated as power supplies and grounds (GND), the power supply impedance will decrease, leading to improved imaging characteristics of the CMOS image sensor 1.

[0085] [Modification of the first embodiment] Although the technology according to the present disclosure has been described above based on the preferred embodiment, the technology according to the present disclosure is not limited to the embodiment. The configuration and structure of the imaging device described in the first embodiment are merely examples and can be modified as appropriate.

[0086] For example, in the first embodiment, the two pad electrodes 32 for temperature measurement to which the resistance element 31 is connected _1 ,32 _2Of the pad electrode groups 17A and 17B, the two pad electrodes A and B at the lower end of the pad electrode group 17A are used as the temperature measurement pad, but the number and arrangement of the pad electrodes for temperature measurement are not particularly limited. For example, as shown in Fig. 14, the pad electrode at the upper end X of the pad electrode group 17A may be used, or each of the pad electrodes at the upper end Y / lower end Z of the pad electrode group 17B may be used, or a combination of these may be used.

[0087] [Stacked semiconductor chip structure] The semiconductor chip structure of the CMOS image sensor 1 may be a flat structure or a stacked structure. Here, a case where the semiconductor chip structure of the CMOS image sensor 1 is a stacked structure will be described. Fig. 15 is an exploded perspective view showing the stacked semiconductor chip structure.

[0088] As shown in Fig. 15, the semiconductor chip 10 of the CMOS image sensor 1 has a stacked structure in which, for example, a first semiconductor chip 10A and a second semiconductor chip 10B are stacked. In Fig. 15, the first semiconductor chip 10A is the upper chip, and the second semiconductor chip 10B is the lower chip. The first semiconductor chip 10A has a pixel array section 11 in which pixels 20 are arranged in a matrix, and the second semiconductor chip 10B has a peripheral circuit section of the pixel array section 11. Here, the stacked structure is made up of two semiconductor chips, the first semiconductor chip 10A and the second semiconductor chip 10B, but it is also possible to have a stacked structure of three or more semiconductor chips.

[0089] In this embodiment, in addition to the pad electrode groups 17A and 17B provided at both ends in the row direction of the semiconductor chip 10, pad electrode groups 17C and 17D are also provided at both ends in the column direction. _1 and the pad electrode group 17A on the lower chip side _2 The pad electrode group 17B is made up of the pad electrode group 17B on the upper chip side. _1 and the pad electrode group 17B on the lower chip side_2 Similarly, the pad electrode group 17C is composed of the pad electrode group 17C on the upper chip side. _1 and the pad electrode group 17C on the lower chip side _2 The pad electrode group 17D is made up of the pad electrode group 17D on the upper chip side. _1 and pad electrode group 17D on the lower chip side _2 It consists of:

[0090] In the above-described laminated structure, the resistive element 31 for measuring the temperature is provided on the first semiconductor chip 10A, which is the upper chip. _1 ,32 _2 are provided on the second semiconductor chip 10B, which is the lower chip. Specifically, two pad electrodes 32 _1 ,32 _2 As the pad electrode group 17D on the lower chip side _2 Two pad electrodes A and B are used at the ends.

[0091] The resistor element 31 and the two pad electrodes 32 _1 ,32 _2 The first semiconductor chip 10A and the second semiconductor chip 10B are electrically connected to each other by a connection portion 10C that electrically connects the first semiconductor chip 10A and the second semiconductor chip 10B. In FIG. 15, the resistor element 31 and the two pad electrodes 32 _1 ,32 _2 As the connection part 10C for electrically connecting the above, a connection method using a through chip via (TCV) 53 is illustrated. However, the connection method of the connection part 10C illustrated here is merely an example and is not limited to this. Another preferable connection method is metal-metal bonding including Cu-Cu bonding.

[0092] As described above, in the semiconductor chip 10 having a stacked structure in which the first semiconductor chip 10A and the second semiconductor chip 10B are stacked, by providing the resistive element 31 in the first semiconductor chip 10A, a pixel array section 11 in which the pixels 20 are arranged in a matrix is ​​formed, and the temperature of the first semiconductor chip 10A can be measured.

[0093] <Second embodiment> The temperature correction system according to the second embodiment of the present disclosure is a system that corrects the temperature measured by the temperature sensor 16 mounted on the semiconductor chip 10 of the semiconductor device according to the first embodiment having the above configuration, i.e., the CMOS image sensor 1. An example of the system configuration of the temperature correction system according to the second embodiment of the present disclosure is shown in FIG.

[0094] The temperature correction system according to the second embodiment of the present disclosure is configured to include a temperature measurement unit 60 in addition to the CMOS image sensor 1 configured as described above in which the temperature sensor 16 is mounted on the semiconductor chip 10.

[0095] The temperature measuring unit 60 is a pad electrode 32 to which the resistive element 31 is connected in the semiconductor chip 10. _1 ,32 _2 The actual temperature of the semiconductor chip 10 is measured by applying a constant electrical signal (constant voltage or constant current) between the resistor 31 and the temperature measuring unit 60 and measuring a current or voltage proportional to the actual temperature of the semiconductor chip 10. For example, the temperature measuring unit 60 calculates the actual temperature of the semiconductor chip 10 from the value of a current flowing through the resistor 31 when a constant voltage is applied to the resistor 31, or calculates the actual temperature of the semiconductor chip 10 from the voltage value across the resistor 31 when a constant current is passed through the resistor 31.

[0096] In the CMOS image sensor 1, temperature information measured by the temperature sensor 16 is supplied to the logic circuit unit 14 via an analog-digital converter 50 provided in the column processing unit 13. As the analog-digital converter 50, a single-slope analog-digital converter, which is an example of a reference signal comparison type analog-digital converter, a successive approximation type analog-digital converter, a delta-sigma modulation type (ΔΣ modulation type) analog-digital converter, or the like can be used.

[0097] Here, a case is illustrated in which a single-slope analog-digital converter is used as the analog-digital converter 50. The single-slope analog-digital converter 50 includes, for example, a reference signal generating unit 501, a comparator 502, and a counter 503.

[0098] The reference signal generating unit 501 is formed of, for example, a digital-to-analog conversion (DAC) circuit, and generates a so-called ramp wave reference signal whose level (voltage) monotonically decreases over time as a reference signal for analog-to-digital conversion.

[0099] The comparator 502 receives an analog pixel signal read from the pixel 20 as a comparison input, receives a reference signal generated by the reference signal generating unit 501 as a reference input, and compares the two signals. When the reference signal is greater than the pixel signal, the output of the comparator 502 goes to a first state (e.g., high level), for example, and when the reference signal is equal to or less than the pixel signal, the output goes to a second state (e.g., low level). As a result, the comparator 502 outputs a pulse signal having a pulse width corresponding to the magnitude of the signal level of the pixel signal as a comparison result.

[0100] The counter 503 receives a clock signal from the timing control unit 15 at the same timing as the start of supplying the reference signal to the comparator 502. The counter 503 performs a counting operation in synchronization with the clock signal to measure the period of the pulse width of the output pulse of the comparator 502, that is, the period from the start of the comparison operation to the end of the comparison operation. The count result (count value) of the comparator 502 becomes a digital value obtained by digitizing the analog pixel signal.

[0101] The temperature information measured by the temperature sensor 16 is supplied to the logic circuit unit 14 via the single-slope analog-to-digital converter 50 having the above-mentioned configuration. The logic circuit unit 14 is made up of a signal processing unit 141, a temperature correction unit 142, etc.

[0102] The signal processing unit 141 performs a predetermined signal processing on the pixel signals read from each pixel 20 of the pixel array unit 11 through the column processing unit 13, and outputs the pixel signals to the pad electrodes 32. _13 Output through.

[0103] The temperature correction unit 142 corrects for individual device variations by correcting the temperature measured by the temperature sensor 16, which is provided through a single-slope analog-to-digital converter 50. During this temperature correction, it is necessary to measure the temperature for each semiconductor chip 10 and perform temperature correction of the temperature sensor for each semiconductor chip 10 in order to avoid being affected by temperature variations within the wafer surface.

[0104] Therefore, in the present temperature correction system, the temperature measuring unit 60 measures the temperature of the pad electrode 32 to which the resistance element 31 is connected. _1 ,32 _2 The actual temperature of the semiconductor chip 10 is measured by applying a constant electric signal (constant voltage or constant current) between the pad electrodes 32 and measuring the current or voltage proportional to the actual temperature of the semiconductor chip 10. _11 The signal is provided to the temperature correction unit 142 via

[0105] The temperature correction section 142 corrects the temperature measured by the temperature sensor 16 based on the temperature of the semiconductor chip 10 measured by the temperature measurement section 60. The temperature information measured by the temperature sensor 16 and corrected by the temperature correction section 142 is transmitted to the pad electrode 32. _12 The output is sent to the outside of the semiconductor chip 10 via the

[0106] In this manner, the actual temperature is measured for each semiconductor chip 10 using the impedance element (in this example, the resistance element 31) provided for each semiconductor chip 10, and this is reflected in the correction of the temperature measured by the temperature sensor 16, so that the temperature correction of the temperature sensor 16 can be performed for each semiconductor chip 10 without being affected by temperature variations within the wafer surface.

[0107] <Third embodiment> The alarm system according to the third embodiment of the present disclosure is a system that issues an alarm when the temperature measured by the temperature sensor 16 mounted on the semiconductor chip 10 of the semiconductor device according to the first embodiment having the above configuration, i.e., the CMOS image sensor 1, is abnormal. An example of the system configuration of the alarm system according to the third embodiment of the present disclosure is shown in Fig. 17.

[0108] The alarm system according to the third embodiment of the present disclosure is configured to include a CMOS image sensor 1 equipped with the temperature compensation system according to the second embodiment, which has a temperature measurement unit 60 outside the semiconductor chip 10 and a temperature compensation unit 142 inside the semiconductor chip 10, as well as an alarm unit 70 that detects when the compensated temperature measured by the temperature sensor 16 exceeds a predetermined reference temperature and issues an alarm.

[0109] When the temperature measured by the temperature sensor 16 mounted on the semiconductor chip 10 is abnormal, the alarm unit 70 detects, for example, the temperature measured by the temperature sensor 16 and corrected by the temperature correction unit 142, and outputs a signal to the pad electrode 32. _12 When it detects that the temperature information output through the temperature sensor exceeds a predetermined reference temperature (for example, the upper limit temperature of the system), it issues an alarm to inform the user of the occurrence of an abnormality. Examples of methods for issuing an alarm include a visual method (an alarm displayed on a display), an auditory method (an alarm sound), or a combination of both.

[0110] In this way, in the CMOS image sensor 1 equipped with the temperature sensor 16 on the semiconductor chip 10, an alarm is issued when the temperature measured by the temperature sensor 16 is abnormal, and the occurrence of the abnormality can be dealt with promptly, for example by stopping the operation of the system. This makes it possible to protect the circuit elements on the semiconductor chip 10 from thermal destruction caused by temperature. It is also possible to discover an abnormality in the temperature sensor 16 itself. The temperature measurement unit 60 outside the semiconductor chip 10 is used to correct the measurement value of the temperature sensor 16 when adjusting the individual semiconductor chip 10 before shipment.

[0111] <Application examples of the technology disclosed herein> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as an imaging device mounted on any type of moving object such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, a construction machine, or an agricultural machine (tractor).

[0112] [Application to moving objects] FIG. 18 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology according to the present disclosure can be applied.

[0113] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 1021, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0114] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0115] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0116] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0117] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0118] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0119] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform functions such as ADAS (Advanced Driver Assistance System) including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, and vehicle lane departure warning. It is possible to perform cooperative control aimed at realizing the functions of the autonomous vehicle stability system.

[0120] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0121] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0122] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 18, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0123] FIG. 19 is a diagram showing an example of the installation position of the imaging unit 12031.

[0124] In FIG. 19, a vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as an imaging unit 12031.

[0125] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0126] 19 shows an example of the imaging ranges of the imaging units 12101 to 12104. An imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and an imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0127] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0128] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0129] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0130] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0131] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. In the technology according to the present disclosure, for example, the CMOS image sensor according to the first embodiment in which the temperature sensor 16 is mounted on the semiconductor chip 10 can be used as the imaging unit 12031 from among the configurations described above.

[0132] The CMOS image sensor mounted on a vehicle is provided with a temperature sensor 16 inside the device as a safety feature to stop the function when the system reaches an upper limit temperature. Particularly in high temperature ranges, a high measurement accuracy of ±1 degree is required for the temperature sensor 16. Therefore, by providing the temperature correction system according to the second embodiment, the high measurement accuracy of the temperature sensor 16 can be maintained. Furthermore, by providing the alarm according to the third embodiment, an alarm can be issued to maintain safety performance when an abnormality occurs, such as when the system reaches an upper limit temperature.

[0133] <Configurations that the present disclosure can take> The present disclosure may also be configured as follows.

[0134] <A. Semiconductor Device> [A-1] Semiconductor chip, A plurality of pad electrodes formed in a semiconductor chip; and an impedance element electrically connected between at least two of the plurality of pad electrodes; A semiconductor device configured to be able to measure the temperature of a semiconductor chip by applying a constant electrical signal from outside the semiconductor chip between at least two pad electrodes to which an impedance element is connected. [A-2] The impedance element is an element that has temperature dependence. The semiconductor device according to the above [A-1]. [A-3] The impedance element is a resistive element. The semiconductor device according to the above [A-2]. [A-4] The semiconductor chip is equipped with a temperature sensor that measures the temperature inside the device. The semiconductor device according to any one of [A-1] to [A-3] above. [A-5] The size of at least two pad electrodes to which the impedance element is connected is larger than the size of the other pad electrodes; The semiconductor device according to any one of [A-1] to [A-4] above. [A-6] The size of at least two pad electrodes to which the impedance element is connected is smaller than the size of the other pad electrodes; The semiconductor device according to any one of [A-1] to [A-4] above. [A-7] At least two pad electrodes to which an impedance element is connected are provided with another pad electrode therebetween; The semiconductor device according to any one of [A-1] to [A-4] above. [A-8] At least two pad electrodes to which the impedance element is connected each include a plurality of pad electrodes electrically connected to each other; The semiconductor device according to any one of [A-1] to [A-4] above. [A-9] The number of pad electrodes to which the impedance element is connected is three or more, The wiring electrically connecting the three or more pad electrodes and the impedance element is wiring having the same conductor length, conductor material, wire diameter, and electrical resistance. The semiconductor device according to any one of [A-1] to [A-4] above. [A-10] The semiconductor device is an imaging device having a semiconductor chip with a stacked structure in which a first semiconductor chip and a second semiconductor chip are stacked and electrically connected to each other, A pixel array section in which pixels are arranged is formed on the first semiconductor chip, A peripheral circuit section of a pixel array section is formed on the second semiconductor chip, The impedance element is provided on the first semiconductor chip, at least two pad electrodes to which the impedance element is connected are provided on the second semiconductor chip; The semiconductor device according to any one of [A-1] to [A-9] above.

[0135] B. Temperature Compensation System [B-1] A semiconductor device having a semiconductor chip equipped with a temperature sensor, A temperature measuring unit for measuring the temperature of the semiconductor chip; and a temperature correction unit that corrects the temperature measured by the temperature sensor; Equipped with The semiconductor device includes a plurality of pad electrodes formed in a semiconductor chip, and an impedance element electrically connected between at least two of the plurality of pad electrodes, the temperature measuring unit measures the temperature of the semiconductor chip by applying a constant electric signal from outside the semiconductor chip between at least two pad electrodes to which the impedance element is connected; The temperature correction unit corrects the temperature measured by the temperature sensor based on the temperature of the semiconductor chip measured by the temperature measurement unit. Temperature compensation system. [B-2] The impedance element is an element that has temperature dependence. The temperature compensation system described in [B-1] above. [B-3] The impedance element is a resistive element. The temperature compensation system described in [B-2] above. [B-4] The temperature measurement unit applies a constant voltage to the resistive element and calculates the temperature of the semiconductor chip from the current flowing through the resistive element. The temperature compensation system described in [B-3] above. [B-5] The temperature measurement unit passes a constant current through the resistive element and calculates the temperature of the semiconductor chip from the voltage value across the resistive element. The temperature compensation system described in [B-3] above.

[0136] C. Alarm System [C-1] A semiconductor device having a semiconductor chip equipped with a temperature sensor, a temperature measuring unit for measuring the temperature of the semiconductor chip; A temperature correction unit that corrects the temperature measured by the temperature sensor; and Alarm section, Equipped with The semiconductor device includes a plurality of pad electrodes formed in a semiconductor chip, and an impedance element electrically connected between at least two of the plurality of pad electrodes, the temperature measuring unit measures the temperature of the semiconductor chip by applying a constant electric signal from outside the semiconductor chip between at least two pad electrodes to which the impedance element is connected; The temperature correction unit corrects the temperature measured by the temperature sensor based on the temperature of the semiconductor chip measured by the temperature measurement unit; The alarm unit issues an alarm when it detects that the temperature corrected by the temperature correction unit exceeds a predetermined reference temperature. Alarm system. [C-2] The impedance element is an element that has temperature dependence. The alarm system according to [C-1] above. [C-3] The impedance element is a resistive element. The alarm system according to [C-2] above. [C-4] The impedance element is a resistive element. The alarm system according to [C-3] above. [C-5] The temperature measurement unit applies a constant voltage to the resistive element and calculates the temperature of the semiconductor chip from the current flowing through the resistive element. The alarm system described in [C-4] above. [C-6] The temperature measurement unit passes a constant current through the resistive element and calculates the temperature of the semiconductor chip from the voltage value across the resistive element. The alarm system described in [C-4] above. [Explanation of symbols]

[0137] 1···CMOS image sensor, 10···semiconductor chip (semiconductor substrate), 11···pixel array section, 12···row selection section, 13···column processing section, 14···logic circuit section, 15···timing control section, 16···temperature sensor, 20···pixel, 21···photodiode, 22···transfer transistor, 23···reset transistor, 24···amplification transistor, 25···selection transistor, 31···resistance element, 32 _1 ~32 _6 ...Pad electrode, 33 (33 _1 ,33 _2 )···Probe needle, 50···Analog-to-digital converter, 60···Temperature measurement unit, 70···Alarm unit

Claims

1. Semiconductor chips, A plurality of pad electrodes formed in a semiconductor chip; and an impedance element electrically connected between at least two of the plurality of pad electrodes; Equipped with A constant electric signal is applied from outside the semiconductor chip between at least two pad electrodes to which an impedance element is connected, thereby making it possible to measure the temperature of the semiconductor chip; The semiconductor chip is equipped with a temperature sensor that measures the temperature inside the device. Semiconductor device.

2. The impedance element is an element that has temperature dependency. The semiconductor device according to claim 1 .

3. The impedance element is a resistive element. The semiconductor device according to claim 2 .

4. The size of at least two pad electrodes to which the impedance element is connected is larger than the size of the other pad electrodes; The semiconductor device according to claim 1 .

5. The size of at least two pad electrodes to which the impedance element is connected is smaller than the size of the other pad electrodes. The semiconductor device according to claim 1 .

6. At least two pad electrodes to which the impedance element is connected are provided with another pad electrode therebetween. The semiconductor device according to claim 1 .

7. Each of the at least two pad electrodes to which the impedance element is connected is made up of a plurality of pad electrodes adjacent to each other and electrically connected to each other. The semiconductor device according to claim 1 .

8. The number of pad electrodes to which the impedance elements are connected is three or more, The wiring electrically connecting the three or more pad electrodes and the impedance element is wiring having the same conductor length, conductor material, wire diameter, and electrical resistance. The semiconductor device according to claim 1 .

9. The semiconductor device is an imaging device having a semiconductor chip with a stacked structure in which a first semiconductor chip and a second semiconductor chip are stacked and electrically connected to each other, A pixel array section in which pixels are arranged is formed on the first semiconductor chip, A peripheral circuit section of a pixel array section is formed on the second semiconductor chip, The impedance element is provided on the first semiconductor chip, at least two pad electrodes to which the impedance element is connected are provided on the second semiconductor chip; The semiconductor device according to claim 1 .

10. A semiconductor device having a semiconductor chip equipped with a temperature sensor; A temperature measuring unit for measuring the temperature of the semiconductor chip; and a temperature correction unit that corrects the temperature measured by the temperature sensor; Equipped with The semiconductor device includes a plurality of pad electrodes formed in a semiconductor chip, and an impedance element electrically connected between at least two of the plurality of pad electrodes, the temperature measuring unit measures the temperature of the semiconductor chip by applying a constant electric signal from outside the semiconductor chip between at least two pad electrodes to which the impedance element is connected; The temperature correction unit corrects the temperature measured by the temperature sensor based on the temperature of the semiconductor chip measured by the temperature measurement unit. Temperature compensation system.

11. The impedance element is an element that has temperature dependency. The temperature compensation system of claim 10.

12. The impedance element is a resistive element.

12. The temperature compensation system of claim 11.

13. The temperature measurement unit applies a constant voltage to the resistance element and calculates the temperature of the semiconductor chip from the value of the current flowing through the resistance element.

13. The temperature compensation system of claim 12.

14. The temperature measurement unit passes a constant current through the resistance element and calculates the temperature of the semiconductor chip from the voltage value across the resistance element.

13. The temperature compensation system of claim 12.

15. A semiconductor device having a semiconductor chip equipped with a temperature sensor; a temperature measuring unit for measuring the temperature of the semiconductor chip; A temperature correction unit that corrects the temperature measured by the temperature sensor; and Alarm section, Equipped with The semiconductor device includes a plurality of pad electrodes formed in a semiconductor chip, and an impedance element electrically connected between at least two of the plurality of pad electrodes, the temperature measuring unit measures the temperature of the semiconductor chip by applying a constant electric signal from outside the semiconductor chip between at least two pad electrodes to which the impedance element is connected; The temperature correction unit corrects the temperature measured by the temperature sensor based on the temperature of the semiconductor chip measured by the temperature measurement unit; The alarm unit issues an alarm when it detects that the temperature corrected by the temperature correction unit exceeds a predetermined reference temperature. Alarm system.

16. The impedance element is an element that has temperature dependency.

16. An alarm system according to claim 15.

17. The impedance element is a resistive element.

17. An alarm system according to claim 16.

18. The temperature measurement unit applies a constant voltage to the resistance element and calculates the temperature of the semiconductor chip from the value of the current flowing through the resistance element.

18. An alarm system according to claim 17.

19. The temperature measurement unit passes a constant current through the resistance element and calculates the temperature of the semiconductor chip from the voltage value across the resistance element.

18. An alarm system according to claim 17.

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