Optical device and method for forming an aperture structure having an aperture in which the optical device is disposed - Patents.com

Abstract

[0003] Embodiments described herein relate to methods for fabricating optical devices. The methods described herein enable fabricating one or more optical devices on a substrate with apertures surrounding each of the optical devices having a plurality of structures. One embodiment of the methods described herein includes disposing an aperture material layer on a surface of the substrate, disposing a structural material layer over the apertures and the surface of the substrate, disposing a hard mask over the apertures and the structural material layer, disposing a patterned photoresist over the hard mask, the patterned photoresist defining exposed hard mask portions, disposing the photoresist, removing the exposed hard mask portions to expose structural portions of the structural material layer, and removing the structural portions to form a plurality of structures between the apertures on a region of the surface of the substrate.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to optical devices. More particularly, embodiments described herein provide for the manufacture of one or more optical devices with an aperture surrounding each of the optical devices. [Background technology]

[0002] Optical systems can be used to manipulate the propagation of light through spatially varying structural parameters (e.g., shape, size, orientation) of the structures. One example of an optical device is a flat optical device. Flat optical devices in the visible and near infrared spectrum may require a transparent substrate with structures, such as nanostructures, disposed thereon. However, processing transparent substrates to form optical devices is complex and difficult as a new technology. For example, a beam impinging on one or more optical devices of an optical system may be larger in diameter than the desired optical device or may not be perfectly aligned with the desired optical device. Stray light from an impinging beam that is larger in diameter than the optical device may reduce the functionality and efficiency of the optical system and may optically interact with the substrate and undesired adjacent optical devices.

[0003] Thus, there is a need in the art for a method that allows for the fabrication of one or more optical devices with an aperture surrounding each of the optical devices. Summary of the Invention

[0004] In one embodiment, a method is provided that includes disposing an open hole material layer on a surface of a substrate, patterning the open hole material layer to form an open hole over an area of ​​the surface of the substrate corresponding to one of a first space defined by adjacent optical devices and a second space defined by one of the adjacent optical devices and a periphery of the substrate, disposing a structural material layer over the open hole and the surface of the substrate, disposing a hard mask over the open hole and the structural material layer, disposing a patterned photoresist over the hard mask, the patterned photoresist defining exposed hard mask portions, disposing the photoresist, removing the exposed hard mask portions to expose structural portions of the structural material layer, and removing the structural portions to form a plurality of structures between the open holes over the area of ​​the surface of the substrate.

[0005] In another embodiment, a method is provided that includes disposing a structural material layer on a surface of a substrate, disposing an open hole material layer on the structural material layer, patterning the open hole material layer to form openings over regions of the surface of the substrate corresponding to one of first spaces defined by adjacent optical devices and second spaces defined by one of the adjacent optical devices and a periphery of the substrate, disposing an organic planarization layer (OPL) over the openings and the structural material layer, disposing a patterned photoresist over the OPL, the patterned photoresist defining exposed OPL portions, disposing the photoresist, removing the exposed OPL portions to expose structural portions of the structural material layer, and removing the structural portions to form a plurality of structures between the openings over the regions of the surface of the substrate.

[0006] In yet another embodiment, a method is provided that includes disposing a structural material layer on a surface of a substrate, the structural material layer being disposed between regions of the surface of the substrate corresponding to one of a first space defined by adjacent optical devices and a second space defined by one of the adjacent optical devices and a periphery of the substrate, disposing a hardmask over the structural material layer, disposing a patterned photoresist over the hardmask, the patterned photoresist defining exposed hardmask portions, disposing the photoresist, removing the exposed hardmask portions to expose structural portions of the structural material layer, removing the structural portions to form a plurality of structures between the regions of the surface of the substrate, and forming openings over the regions.

[0007] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, can be had by reference to embodiments, some of which are illustrated in the accompanying drawings, which should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure, and therefore should not be considered as limiting its scope, since the present disclosure may admit of other equally effective embodiments. [Brief description of the drawings]

[0008] [Figure 1A] 1 is a top view of a substrate having one or more optical devices formed thereon, according to one embodiment. [Figure 1B] 1 is a cross-sectional view of one of the optical devices according to an embodiment; [Diagram 2] 1 is a flow diagram illustrating operations of a method for manufacturing an optical device, according to one embodiment. [Figure 3A-F] 1 is a schematic cross-sectional view of an optical device according to an embodiment; [Figure 4] 1 is a flow diagram illustrating operations of a method for manufacturing an optical device, according to one embodiment. [Figure 5A-E] 1 is a schematic cross-sectional view of an optical device according to an embodiment; [Figure 6]1 is a flow diagram illustrating operations of a method for manufacturing an optical device, according to one embodiment. [Figure 7A-G] 1 is a schematic cross-sectional view of an optical device according to an embodiment; [Figure 8A] 1 is a flow diagram illustrating operations of a method for manufacturing an optical device, according to one embodiment. [Figure 8B] 1 is a flow diagram illustrating operations of a method for manufacturing an optical device, according to one embodiment. [Figure 8C] 1 is a flow diagram illustrating operations of a method for manufacturing an optical device, according to one embodiment. [Figure 9A-E] 1 is a schematic cross-sectional view of an optical device according to an embodiment; [Fig. 9F-I] 1 is a schematic cross-sectional view of an optical device according to an embodiment; [Figure 9J-M] 1 is a schematic cross-sectional view of an optical device according to an embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] To facilitate understanding, the same reference numbers are used, where possible, to designate identical elements common to the figures. It is contemplated that elements disclosed in one embodiment can be beneficially utilized in other embodiments without specific recitation.

[0010] The embodiments described herein relate to methods of fabricating optical devices, such as metasurfaces. The methods described herein allow for the fabrication of one or more optical devices on a substrate with an aperture surrounding each of the optical devices having a plurality of structures, such as nanostructures, formed on the substrate. One embodiment of the method described herein includes disposing an aperture material layer on a surface of the substrate, disposing a structural material layer over the apertures and the substrate surface, disposing a hard mask over the apertures and the structural material layer, disposing a patterned photoresist over the hard mask, the patterned photoresist defining exposed hard mask portions, disposing the photoresist, removing the exposed hard mask portions to expose structural portions of the structural material layer, and removing the structural portions to form a plurality of structures between the apertures over a region of the substrate surface.

[0011] FIG. 1A is a top view of a substrate 101 having one or more optical devices 102a, 102b formed thereon. FIG. 1B is a cross-sectional view of the optical device 102a. Each of the optical devices 102a, 102b includes a plurality of structures 104 disposed on the substrate 101. In some embodiments, which can be combined with other embodiments described herein, the optical devices 102a, 102b are metasurfaces having structures 104 that are nanostructures in the form of nanoscale features formed (e.g., directly or indirectly) on or integrated with the surface 103 of the substrate 101. The nanostructures can be substantially crystalline, monocrystalline, polycrystalline, amorphous, or combinations thereof. In one example, each of the dimensions of the nanostructures has a dimension less than about 1000 nm, e.g., less than about 500 nm, less than about 200 nm, less than about 100 nm, or even less than about 20 nm. 1A and 1B show structure 104 in a lattice arrangement, other configurations are possible, and the lattice arrangement is not intended to limit the scope of the disclosure provided herein.

[0012] The substrate 101 can also be selected to transmit an appropriate amount of light of a desired wavelength or range of wavelengths, such as one or more wavelengths from about 100 to about 300 nanometers. In some embodiments, but not limited to, the substrate 101 is configured such that the substrate 101 transmits about 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, 95% or more, 99% or more of the IR to UV region of the light spectrum. The substrate 101 can be formed from any suitable material, provided that the substrate 101 can adequately transmit light of a desired wavelength or range of wavelengths and can function as a suitable support for an optical device. In some embodiments that can be combined with other embodiments described herein, the material of the substrate 101 has a relatively low refractive index compared to the refractive index of the structure 104. The choice of substrate can include substrates of any suitable material, including, but not limited to, amorphous dielectrics, non-amorphous dielectrics, crystalline dielectrics, silicon oxides, polymers, and combinations thereof. In some embodiments that can be combined with other embodiments described herein, the substrate 101 comprises a transparent material. In one embodiment, which can be combined with other embodiments described herein, the substrate 101 is transparent and has an absorption coefficient less than 0.001. Suitable examples may include oxides, sulfides, phosphides, tellurides, or combinations thereof. In one example, the substrate 101 is silicon (Si), silicon dioxide (SiO 2 ), sapphire, and high refractive index transparent material-containing materials.

[0013] Each of the one or more optical devices 102a, 102b has one or more structures 104 formed on or integrated with the surface 103 of the substrate 101. In an embodiment that can be combined with other embodiments described herein, the structures 104 can have the same dimensions, such as height and width. In another embodiment that can be combined with other embodiments described herein, at least one of the structures 104 can have at least one dimension, such as one of height and width, that is different from the dimensions of the additional structures 104. In an embodiment that can be combined with other embodiments described herein, the structures 104 can have the same refractive index. In another embodiment that can be combined with other embodiments described herein, at least one of the structures 104 can have a refractive index that is different from the refractive index of the additional structures 104.

[0014] In one embodiment, which can be combined with other embodiments described herein, the structural material, i.e., the material of the structure 104, is titanium dioxide (TiO 2 ), zinc oxide (ZnO), tin dioxide (SnO 2 ), aluminum doped zinc oxide (AZO), fluorine doped tin oxide (FTO), cadmium stannate (tin oxide) (CTO), and zinc stannate (tin oxide) (SnZnO 3 In another embodiment, which can be combined with other embodiments described herein, the structural material comprises a non-conductive non-crystalline material, such as a dielectric material. Dielectric materials can include amorphous dielectrics, non-amorphous dielectrics, and crystalline dielectrics. Examples of dielectric materials include, but are not limited to, a-Si containing materials, such as silicon nitride (Si 3 N 4 ), and amorphous silicon (a-Si).

[0015] The method of fabricating one or more optical devices 102a, 102b described herein includes forming apertures 105, shown in Figures 3B-3F, 5B-5E, 7B-7G, and 9E, 9H, 9I, 9L, and 9M, adjacent each peripheral structure 106 of the structure 104. In the embodiments described herein, the apertures 105 are formed over an area 108 corresponding to one of the spaces defined by the adjacent optical devices 102a, 102b and the space defined by one of the optical devices 102a, 102b and the periphery 101 of the substrate. structure In some embodiments, which may be combined with other embodiments described herein, an aperture is disposed. structure The aperture is opaque such that it does not transmit one or more wavelengths in the range of about 100 to about 3000 nanometers. structure The apertures prevent stray light (i.e., light in an impinging beam that is larger than the surface area defined by each of the peripheral structures 106 of the structure 104) from degrading the functionality and efficiency of the optical devices 102a, 102b. structure Material, i.e., aperture structure Materials include, but are not limited to, chromium (Cr), titanium nitride (TiN), a-Si, titanium (Ti), and aluminum (Al) containing materials.

[0016] Figure 2 is a flow diagram illustrating operations of a method 200 for fabricating the optical device 300 shown in Figures 3A-3F. In operation 201, as shown in Figure 3A, an open-pored material layer 302 is disposed on the surface 103 of a substrate 101. The open-pored material layer 302 can be disposed on the surface 103 using a liquid material injection casting process, a spin-on coating process, a liquid spray coating process, a dry powder coating process, a screen printing process, a doctor blade process, a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, a flowable chemical vapor deposition (FCVD) process, an atomic layer deposition (ALD) process, an evaporation process, or a sputtering process.

[0017] In operation 202, the perforated material layer 302 is patterned, as shown in FIG. 3B. Patterning the perforated material layer 302 forms perforations 105 over regions 108 corresponding to one of the spaces defined by adjacent optical devices 102a, 102b and the space defined by one of the optical devices 102a, 102b and the periphery 101 of the substrate. Patterning the perforated material layer 302 may include lithography or etching processes, such as ion implantation, ion etching, reactive ion etching (RIE), directional RIE, microblasting, waterjet cutting, laser etching, and selective wet chemical etching. The lithography process may include the use of alignment marks and / or features on the surface 103 of the substrate 101.

[0018] 3C, a layer of structural material 304 is disposed over the aperture 105 and the surface 103 of the substrate 101. The layer of structural material 304 may be disposed over the aperture 105 and the surface 103 using a liquid material injection casting process, a spin-on coating process, a liquid spray coating process, a dry powder coating process, a screen printing process, a doctor blading process, a PVD process, a CVD process, a PECVD process, an FCVD process, an ALD process, an evaporation process, or a sputtering process.

[0019] In operation 204, as shown in FIG. 3D, a hard mask 306 is disposed on the structural material layer 304. The hard mask 306 may be disposed on the structural material layer 304 using a liquid material injection casting process, a spin-on coating process, a liquid spray coating process, a dry powder coating process, a screen printing process, a doctor blade process, a PVD process, a CVD process, a PECVD process, an FCVD process, an ALD process, an evaporation process, or a sputtering process. In one embodiment, which may be combined with other embodiments described herein, the hard mask 306 is an opaque hard mask that is removed after the optical device 300 is formed. In another embodiment, the hard mask 306 is a transparent hard mask. The hard mask 306 may be formed of chromium (Cr), silver (Ag), Si 3 N 4、 SiO 2 , TiN, and carbon (C) containing materials.

[0020] In operation 205, as shown in FIG. 3D, a patterned photoresist 308 is disposed on the hard mask 306. The patterned photoresist 308 is formed by disposing a photoresist material on the hard mask 306 and performing a lithography process. The patterned photoresist 308 defines hard mask portions 312 (i.e., openings in the hard mask 306) of the hard mask 306. The hard mask portions 312 correspond to the structure pattern 310, resulting in the formation of the structure 104. The patterned photoresist 308 may be disposed on the hard mask 306 using a spin-on coating process. The photoresist material 308 may include, but is not limited to, a photosensitive polymer-containing material.

[0021] In operation 206, the hard mask portion 312 of the hard mask 306 is removed, as shown in FIG. 3E. Removal of the hard mask portion 312 exposes the negative structural portion 314 of the structural material layer 304. The negative structural portion 314 corresponds to the structural pattern 310, resulting in the formation of the structure 104. In operation 207, the negative structural portion 314 of the structural material layer 304 is removed to form the structure 104, as shown in FIG. 3E. In an embodiment, which can be combined with other embodiments described herein, the hard mask 306 has a lower etch rate than the structural material of the structural material layer 304. The hard mask portion 312 and the negative structural portion 314 can be removed by ion etching, RIE, or selective wet chemical etching.

[0022] In operation 208, the hard mask 306 and the patterned photoresist 308 are removed, as shown in FIG. 3F. Removing the hard mask 306 may include ion etching, RIE, or selective wet chemical etching. Removing the patterned photoresist 308 may include lithography or etching processes as described herein. The method 200 forms an optical device 300 with an aperture 105 disposed over an area 108 adjacent each peripheral structure 106 of the structure 104.

[0023] FIG. 4 is a flow diagram illustrating operations of a method 400 for manufacturing an optical device 500 as shown in FIGS. 5A-5E. In operation 401, a structural material layer 304 is disposed on the surface 103 of the substrate 101, as shown in FIG. 5A. The structural material layer 304 may be disposed on the surface 103 of the substrate 101 using one or more of the processes provided in operation 203 of the method 200. In operation 402, an open-hole material layer 302 is disposed on the surface 103 of the substrate 101, as shown in FIG. 5A. The open-hole material layer 302 may be disposed on the structural material layer 304 using one or more of the processes provided in operation 201 of the method 200. In operation 403, the open-hole material layer 302 is patterned, as shown in FIG. 5B. Patterning the open hole material layer 302 forms openings 105 over regions 108 that correspond to one of the spaces defined by adjacent optical devices 102a, 102b and the spaces defined by one of the optical devices 102a, 102b and the periphery 101 of the substrate. Patterning the open hole material layer 302 may include one or more of the processes provided in operation 202 of method 200.

[0024] In operation 404, an organic planarization layer (OPL) 502 is disposed over the structural material layer 304 and the aperture 105, as shown in FIG. 5C. The OPL 502 may include a photosensitive organic polymer that includes a photosensitive material that is configured to be chemically altered upon exposure to electromagnetic (EM) radiation and thus removed using a developing solvent. For example, the photosensitive organic polymer may be a polyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ether resin, a polyphenylene sulfide resin, or a benzocyclobutene (BCB). More generally, for example, the OPL 502 may include any organic polymer and a photoactive compound having a molecular structure that can attach to the molecular structure of the organic polymer. The OPL 502 may be disposed using a spin-on coating process.

[0025] In operation 405, as shown in FIG. 5C, a patterned photoresist 308 is disposed on the OPL 502. The patterned photoresist 308 is formed by disposing a photoresist material on the OPL 502 and performing a lithography process. The patterned photoresist 308 defines the OPL portions 504 of the OPL 502 (i.e., the openings of the OPL 502). The OPL portions 504 correspond to the structure pattern 310, resulting in the formation of the structures 104. The patterned photoresist 308 may be disposed on the OPL 502 using a spin-on coating process. The patterned photoresist 308 may include, but is not limited to, a photosensitive polymer-containing material.

[0026] In operation 406, OPL portions 504 of OPL 502 are removed, as shown in FIG. 5D. Removal of OPL portions 504 exposes negative structural portions 314 of structural material layer 304. Negative structural portions 314 correspond to structural pattern 310, resulting in the formation of structures 104. OPL portions 504 may be removed by RIE, wet etching, and lithography. In operation 407, negative structural portions 314 of structural material layer 304 are removed to form structures 104, as shown in FIG. 5D. Negative structural portions 314 may be removed by ion etching, RIE, or selective wet chemical etching.

[0027] In operation 408, the OPL 502 and the patterned photoresist 308 are removed, as shown in FIG. 5E. Removing the patterned photoresist 308 may include a lithography process or an etching process as described herein. The method 200 forms an optical device 500 having an aperture 105 disposed over an area 108 adjacent each peripheral structure 106 of the structure 104.

[0028] FIG 6 is a flow diagram illustrating operations of a method 600 for fabricating an optical device 700 as shown in FIGS. 7A-7G. In operation 601, a structural material layer 304 is disposed on the surface 103 of the substrate 101, as shown in FIG 6A. The structural material layer 304 may be disposed on the surface 103 of the substrate 101 using one or more of the processes provided in operation 203 of the method 200. In operation 602, a hard mask 306 is disposed on the structural material layer 304, as shown in FIG 7A. The hard mask 306 may be disposed on the structural material layer 304 using one or more of the processes provided in operation 204 of the method 200.

[0029] In operation 603, an open hole material layer 302 is disposed over the hard mask 306, as shown in FIG. 7A. The open hole material layer 302 may be disposed over the hard mask 306 using one or more of the processes provided in operation 201 of method 200. In one embodiment, which may be combined with other embodiments described herein, the structural material layer 304 is an a-Si-containing layer having a thickness of about 450 nm to about 1000 nm, and the hard mask 306 is a Si-containing layer having a thickness of about 10 nm to about 150 nm. 3 N 4 7B , the open hole material layer 302 is a Cr-containing layer having a thickness of about 10 nm to about 200 nm. In operation 604, the open hole material layer 302 is patterned, as shown in FIG. 7B . Patterning the open hole material layer 302 forms openings 105 over regions 108 corresponding to one of the spaces defined by adjacent optical devices 102a, 102b and the spaces defined by one of the optical devices 102a, 102b and the periphery 101 of the substrate. Patterning the open hole material layer 302 may include one or more of the processes provided in operation 202 of method 200.

[0030] In operation 605, OPL 502 is disposed over hard mask 306 and aperture 105, as shown in Figure 7C. In operation 606, patterned photoresist 308 is disposed over OPL 502, as shown in Figure 7D. Patterned photoresist 308 is formed by disposing a photoresist material over OPL 502 and performing a lithography process. Patterned photoresist 308 defines OPL portions 504 of OPL 502. OPL portions 504 correspond to structure pattern 310, resulting in the formation of structures 104.

[0031] In operation 607, OPL portions 504 of OPL 502 are removed, as shown in Figure 7D. Removal of OPL portions 504 exposes hard mask portions 312 of hard mask 306. In operation 608, hard mask portions 312 of hard mask 306 are removed, as shown in Figure 7D. Removal of hard mask portions 312 exposes negative structure portions 314 of structural material layer 304. Negative structure portions 314 correspond to structural pattern 310, resulting in the formation of structures 104. In operation 609, OPL 502 and patterned photoresist 308 are removed, as shown in Figure 7E. Removing patterned photoresist 308 may include a lithography process or an etching process as described herein.

[0032] In operation 610, the negative structural portions 314 of the structural material layer 304 are removed to form the structures 104, as shown in Figure 7F. In operation 611, the hard mask 306 is removed, as shown in Figure 7G. Removing the hard mask 306 may include using one or more of the processes provided in operation 204 of method 200. Method 200 forms an optical device 700 with apertures 105 disposed over regions 108 adjacent each peripheral structure 106 of the structure 104.

[0033] Figure 8A is a flow diagram illustrating operations of a method 800A for manufacturing the optical device 900A shown in Figures 9A-9E. In operation 801, a layer of structural material 304 is disposed on the surface 103 of the substrate 101, as shown in Figure 9A. The layer of structural material 304 may be disposed on the surface 103 of the substrate 101 using one or more of the processes provided in operation 203 of the method 200.

[0034] In operation 802, as shown in FIG. 9A, a hard mask 306 is disposed on the structural material layer 304. The hard mask 306 may be disposed on the structural material layer 304 using one or more of the processes provided in operation 204 of method 200. In operation 803, as shown in FIG. 9C, a patterned photoresist 308 is disposed on the hard mask 306. The patterned photoresist 308 is formed by disposing a photoresist material on the hard mask 306 and performing a lithography process. The patterned photoresist 308 defines a hard mask portion 312 of the hard mask 306. The hard mask portion 312 corresponds to the structural pattern 310, resulting in the formation of the structure 104.

[0035] In operation 804, hard mask portion 312 of hard mask 306 is removed, as shown in Figure 9D. In operation 805, negative structure portion 314 of structural material layer 304 is removed to form structure 104, as shown in Figure 9D. In operation 806, hard mask 306 and patterned photoresist 308 are removed, as shown in Figure 9E.

[0036] In operation 807, the substrate 101 is masked to expose regions 108 adjacent each peripheral structure 106 of the structure 104. Masking the substrate 101 may include placing a shadow mask over the structure 104 to expose the regions 108. In operation 808, an aperture 105 is placed over the region 108 adjacent each peripheral structure 106 of the structure 104, as shown in FIG.

[0037] FIG. 8B is a flow diagram illustrating operations of a method 800B for fabricating an optical device 900B shown in FIGS. 9A-9D and 9F-9I. Method 800B includes operations 801-806. In operation 809, a gap fill material 902 is disposed over the structure 104, as shown in FIG. 9F. The gap fill material 902 includes, but is not limited to, a polymer, an OPL, and a spin-on containing material. In operation 810, an aperture material layer 302 is disposed over the gap fill material 902 and the region 108, as shown in FIG. 9G. The aperture material layer 302 may be disposed over the gap fill material 902 and the region 108 using one or more of the processes provided in operation 201 of method 200. In operation 811, the aperture material layer 302 over the gap fill material 902 is removed to form an aperture 105 over the region 108, as shown in FIG. 9H. In operation 812, the gap fill material 902 is removed, as shown in FIG. 9I. The gap fill material 902 can be removed by solvent, wet etching, ashing, and RIE. Methods 800A and 800B form optical devices 900A, 900B with apertures 105 disposed over regions 108 adjacent to each peripheral structure 106 of the structure 104.

[0038] 8C is a flow diagram illustrating operations of a method 800C for fabricating the optical device 900C shown in FIGS. 9A-9D and 9J-9N. Method 800C includes operations 801-806. In operation 813, an encapsulation layer 904 is disposed over structure 104 and region 108, as shown in FIG. 9J. The encapsulation layer 904 is a Si 3 N 4 , SiO 2, low refractive index fluoropolymers, hydrogels, and photoresist-containing materials. The encapsulation layer 904 may be disposed by one or more of PVD, CVD, FCVD, and spin-on coating. In operation 814, an open hole material layer 302 is disposed on the encapsulation layer 904, as shown in FIG. 9K. The open hole material layer 302 may be disposed on the encapsulation layer 904 using one or more of the processes provided in operation 201 of method 200. In operation 815, a patterned etch layer 906 is disposed on the open hole material layer 302 corresponding to the region 108, exposing the portion 908 of the open hole material layer 302 on the structure 104, as shown in FIG. 9L. In operation 816, the portion 908 of the open hole material layer 302 on the structure 104 is removed to form the opening 105 on the region 108, as shown in FIG. 9M. In operation 817, the patterned etch layer 906 is removed, as shown in Figure 9N. The method 800C forms an optical device 900C with apertures 105 disposed over regions 108 adjacent each peripheral structure 106 of the structure 104.

[0039] In summary, the embodiments described herein relate to a method for manufacturing an optical device. The method described herein allows for the fabrication of one or more optical devices on a substrate with an aperture surrounding each of the optical devices having a plurality of structures. The aperture is disposed over an area corresponding to one of a space defined by adjacent optical devices and a space defined by one of the optical devices and a periphery of the substrate. The aperture is opaque such that one or more wavelengths are not transmitted. The aperture prevents stray light (i.e., light of an impinging beam larger than the surface area defined by each peripheral structure of the structure) from degrading the function and efficiency of the optical device.

[0040] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A method of forming an aperture structure having an optical device and an aperture in which the optical device is disposed, comprising: disposing a layer of open-pore structural material on a surface of a substrate; a first space defined by adjacent optical devices; and a second space defined by one of the adjacent optical devices and a periphery of the substrate. patterning the aperture structure material layer by removing the aperture structure material layer over areas of the surface of the substrate corresponding to one of disposing a layer of structural material over the open pore structure; disposing a hard mask over the layer of structural material; disposing a patterned photoresist over the hardmask, the patterned photoresist defining exposed hardmask portions; removing the exposed hard mask portions to expose structural portions of the structural material layer; and removing portions of the structure to form a plurality of structures in the apertures of the aperture structure; wherein the optical device is a metasurface having the plurality of structures, the plurality of structures being nanostructures in the form of nanoscale features formed on or integrated with a surface of the substrate. method.

2. 10. The method of claim 1, wherein the patterned photoresist and the hard mask are removed after the plurality of structures are formed.

3. The method of claim 2 , wherein removing the patterned photoresist comprises at least one of a lithography process or an etching process.

4. 2. The method of claim 1, wherein the open pore structure material layer comprises one or more of chromium (Cr), titanium nitride (TiN), amorphous silicon (a-Si), titanium (Ti), and aluminum (Al) containing materials.

5. 2. The method of claim 1, wherein the disposing of the open-pore structure material layer comprises one or more of a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, a flowable chemical vapor deposition (FCVD) process, and an atomic layer deposition (ALD) process.

6. 2. The method of claim 1, wherein patterning the open pore structure material layer comprises one or more of ion implantation, ion etching, reactive ion etching (RIE), directional RIE, microblasting, water jet cutting, laser etching, and selective wet chemical etching.

7. The hard mask is made of chromium (Cr), silver (Ag), silicon nitride (Si ３ N ４ ) 、 Silicon oxide (SiO ２ 5. The method of claim 1, wherein the insulating layer comprises one or more of TiN, TiN, and a carbon (C) containing material.

8. 10. The method of claim 1, wherein disposing the hard mask comprises one or more of a liquid material injection casting process, a spin-on coating process, a liquid spray coating process, a dry powder coating process, a screen printing process, a doctor blade process, a PVD process, a CVD process, a PECVD process, an FCVD process, and an ALD process.

9. The method of claim 1 , wherein the hard mask has a greater etch selectivity than the layer of structural material.

10. 1. A method of making an aperture structure having an optical device and an aperture in which the optical device is disposed, comprising: disposing a layer of structural material on a surface of a substrate; disposing an open-pore structural material layer over said structural material layer; a first space defined by adjacent optical devices; and a second space defined by one of the adjacent optical devices and a periphery of the substrate; patterning the layer of material over an area of ​​the surface of the substrate corresponding to one of the areas of the layer of material to form an aperture structure, the removed areas becoming the apertures; disposing an organic planarization layer (OPL) over the open hole structure; disposing a patterned photoresist over the OPL, the patterned photoresist defining an exposed portion of the OPL; removing the exposed OPL portion to expose a structural portion of the structural material layer; and removing portions of the structure to form a plurality of structures in the apertures of the aperture structure over an area of ​​the surface of the substrate; Including, The method, wherein the optical device is a metasurface having the plurality of structures, the plurality of structures being nanostructures in the form of nanoscale features formed on or integrated with a surface of the substrate.

11. The method of claim 10 , wherein a hard mask is disposed between the layer of structural material and the layer of open pore structural material.

12. The structural material layer is an amorphous silicon (a-Si) containing layer, and the hard mask is a silicon nitride (Si ３ N ４ 12. The method of claim 11, wherein the open pore structural material layer is a chromium (Cr) containing layer.

13. the a-Si-containing layer having a first thickness of about 450 nanometers (nm) to about 650 nm; ３ N ４ 13. The method of claim 12, wherein the containing layer has a second thickness of about 10 nm to about 200 nm and the Cr-containing layer has a third thickness of about 10 nm to about 200 nm.

14. The method of claim 10 , wherein the patterned photoresist and the OPL are removed after the plurality of structures are formed.

15. A method of making an aperture structure having an optical device and an aperture in which the optical device is disposed, comprising: disposing a layer of structural material on a surface of a substrate, the layer of structural material comprising: a first space defined by adjacent optical devices; and a second space defined by one of the adjacent optical devices and a periphery of the substrate; disposing a layer of structural material disposed between regions of the surface of the substrate corresponding to one of: disposing a hard mask over the layer of structural material; disposing a patterned photoresist over the hardmask, the patterned photoresist defining exposed hardmask portions; removing the exposed hard mask portions to expose structural portions of the structural material layer; removing portions of the structures to form a plurality of structures between the regions of the surface of the substrate; and forming an open pore structure over the region; the optical device is a metasurface having the plurality of structures, the plurality of structures being nanostructures in the form of nanoscale features formed on or integrated with a surface of the substrate; forming the open pore structure over the region; disposing an encapsulation layer over the plurality of structures and the region; disposing an open pore structural material layer over the encapsulation layer; disposing a patterned etch layer over the area to expose portions of the open pore structure material layer over the plurality of structures; removing portions of the open-pore structure material layer over the plurality of structures, the removed portions becoming the openings; and removing the patterned etch layer; A method comprising:

16. A method for making an aperture structure having an optical device and an aperture in which the optical device is disposed, comprising: disposing a layer of structural material on a surface of a substrate, the layer of structural material comprising: a first space defined by adjacent optical devices; and a second space defined by one of the adjacent optical devices and a periphery of the substrate; disposing a layer of structural material disposed between regions of the surface of the substrate corresponding to one of: disposing a hard mask over the layer of structural material; disposing a patterned photoresist over the hardmask, the patterned photoresist defining exposed hardmask portions; removing the exposed hard mask portions to expose structural portions of the structural material layer; removing portions of the structures to form a plurality of structures between the regions of the surface of the substrate; and forming an open pore structure over the region; the optical device is a metasurface having the plurality of structures, the plurality of structures being nanostructures in the form of nanoscale features formed on or integrated with a surface of the substrate; forming the open pore structure over the region; disposing a gap fill material over the plurality of structures between the regions; disposing a layer of open pore structural material over the gap fill material and the region; removing the open-pore structure material layer on the gap filling material, the removed portions becoming the open holes; and removing said gap filling material. A method comprising:

17. The encapsulation layer is made of silicon nitride (Si ３ N ４ ) 、 Silicon oxide (SiO ２ 20. The method of claim 15, wherein the material comprises one or more of a fluoropolymer, a hydrogel, and a photoresist-containing material.

18. 17. The method of claim 15 or 16, wherein forming the open hole structure over the region comprises masking the plurality of structures to expose the region.

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