Power amplifier and RF circuit module

Abstract

To provide a power amplification device and an RF circuit module, which suppress a harmonic wave, included in an amplification signal amplified by an amplifier, from entering into another device.SOLUTION: The power amplification device includes: a first member having a formed first circuit; a second member having a formed second circuit; and an inter-member connection conductor which electrically connects the first circuit and the second circuit. The second member is mounted on the first member. The second circuit includes a first amplifier which amplifies a radio frequency signal to output a first amplification signal. The first circuit includes a control circuit which controls the operation of the second circuit. The first member includes at least a part of a first termination circuit which is connected to the first amplifier through the inter-member connection conductor to attenuate the harmonic component of the first amplification signal.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present invention relates to a power amplifier device and an RF circuit module. [Background technology]

[0002] Conventionally, electronic devices for mobile communications, satellite communications, etc. have incorporated an RF (Radio Frequency) front-end unit that integrates the transmission and reception functions of high-frequency signals. The RF front-end unit is composed of a high-frequency amplifier, a control IC (Integrated Circuit) that controls the high-frequency amplifier, a switch IC, a duplexer, etc., mounted on a package substrate, and the whole is molded in resin.

[0003] The high-frequency amplifier is, for example, a monolithic microwave IC (MMIC) formed on a gallium arsenide (GaAs) substrate. The control IC and the switch IC are, for example, MMICs formed on a silicon (Si) substrate. These are individually mounted on the surface of a package substrate.

[0004] On the other hand, in order to reduce the size of the package substrate, Patent Document 1 discloses a structure in which a control IC and the like are stacked on a high-frequency amplifier and these are wire-bonded to electrodes on the package substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] US Patent Application Publication No. 2015 / 0303971 Summary of the Invention [Problem to be solved by the invention]

[0006] Patent Document 1 discloses a structure in which an HBT (Heterojunction Bipolar Transistor) die on which a high-frequency amplifier is formed and a Si die on which a control IC is formed are stacked and provided on a laminated substrate. Also, an output matching circuit and a band selection switch are stacked and provided on the laminated substrate at a position different from the positions at which the HBT die and the Si die are provided. The amplified signal amplified by the high-frequency amplifier is transmitted to the band selection switch through the output matching circuit.

[0007] However, in such a configuration, harmonics of the amplified signal may be radiated from the wiring that runs from the high-frequency amplifier to the output matching circuit. Since the radiated harmonics may enter other devices and become noise, a technology is required to suppress the intrusion of harmonics into other devices.

[0008] The present invention has been made in consideration of the above circumstances, and aims to provide a power amplifier device and an RF circuit module that suppresses harmonics contained in a signal amplified by an amplifier from being transmitted to other devices. [Means for solving the problem]

[0009] A power amplification device according to one aspect of the present invention comprises a first member having a first circuit formed therein, a second member having a second circuit formed therein, and an inter-member connecting conductor electrically connecting the first circuit and the second circuit, wherein the second member is mounted on the first member, the second circuit includes a first amplifier that amplifies a radio frequency signal and outputs a first amplified signal, and the first circuit includes a control circuit that controls the operation of the second circuit, and the first member is provided with at least a portion of a first termination circuit that is connected to the first amplifier via the inter-member connecting conductor and attenuates harmonic components of the first amplified signal. Effect of the Invention

[0010] According to the present invention, it is possible to provide a power amplifier and an RF circuit module that suppresses harmonics contained in a signal amplified by an amplifier from being transmitted to other devices. [Brief description of the drawings]

[0011] [Figure 1] Fig. 1(A) is a plan view of an RF circuit module 300. Fig. 1(B) is a cross-sectional view that illustrates a schematic configuration of a cross section taken along line II-II of the RF circuit module 300 illustrated in Fig. 1(A). [Diagram 2] 2A and 2B are diagrams showing the manufacturing process of the RF circuit module 300. [Diagram 3] FIG. 3 is a diagram showing two heat conduction paths, which are heat dissipation paths from the circuit elements formed in the second member 210 in the RF circuit module 300. As shown in FIG. [Figure 4] FIG. 4 is a diagram showing a method for manufacturing the PA circuit element 301. [Diagram 5] FIG. 5 is a diagram for explaining a method for manufacturing the second member 210 and a method for joining the second member 210 to the first member 110. As shown in FIG. [Figure 6] FIG. 6 is a circuit diagram of the power amplifier circuit 61. [Figure 7] FIG. 7 is a diagram for explaining the arrangement of the power amplifier circuit 61 in the power amplifier device 11. As shown in FIG. [Figure 8] FIG. 8 is a diagram showing an example of the layout of the first circuit 400 in the first member 110. As shown in FIG. [Figure 9] FIG. 9 is a diagram showing an example of the layout of electrodes provided on the negative side of the z axis of the first member 110 and the second member 210. In FIG. [Figure 10] FIG. 10 is a diagram showing an example of the layout of the second circuit 500 in the second member 210. As shown in FIG. [Figure 11] FIG. 11 is an enlarged view of the amplifier 501 and the heat spreader 131 and the surrounding area. [Figure 12] FIG. 12 is a cross-sectional view taken along line XII-XII shown in FIG. [Figure 13] FIG. 13 is a cross-sectional view taken along line XIIV-XIIV shown in FIG. [Figure 14] FIG. 14 is an enlarged view of the vicinity of termination circuit 411. [Figure 15] FIG. 15 is a cross-sectional view taken along line XV-XV shown in FIG. [Figure 16] FIG. 16 is a cross-sectional view taken along line XVI-XVI shown in FIG. [Figure 17] FIG. 17 is a circuit diagram of the power amplifier circuit 62. [Figure 18] FIG. 18 is a diagram showing an example of the layout of the first circuit 400 in the first member 110. As shown in FIG. [Figure 19] FIG. 19 is a diagram showing an example of the layout of electrodes provided on the negative side of the z axis of the first member 110 and the second member 210. In FIG. [Figure 20] FIG. 20 is a diagram showing an example of the layout of the second circuit 500 in the second member 210. As shown in FIG. [Figure 21] FIG. 21 is an enlarged view of the area around matching circuit 703 in FIG. [Figure 22] FIG. 22 is a cross-sectional view taken along line XXII-XXII shown in FIG. [Figure 23] FIG. 23 is an enlarged view of the vicinity of the termination circuit 701 in FIG. [Figure 24] FIG. 24 is a cross-sectional view taken along line XXIV-XXIV shown in FIG. [Diagram 25] FIG. 25 is a cross-sectional view taken along line XXV-XXV shown in FIG. [Figure 26] FIG. 26 is a diagram for explaining the arrangement of the power amplifier circuit 63 in the power amplifier device 13. As shown in FIG. [Figure 27] FIG. 27 is a diagram for explaining the arrangement of the power amplifier circuit 64 in the power amplifier device 14. As shown in FIG. [Figure 28] FIG. 28 is a diagram for explaining a matching circuit 441c which is a modified example of the matching circuit 441 in the power amplifier circuit 64. As shown in FIG. [Figure 29]FIG. 29 is a diagram for explaining the arrangement of the power amplifier circuit 65 in the power amplifier device 15. As shown in FIG. [Diagram 30] FIG. 30 is a diagram for explaining the arrangement of the power amplifier circuit 66 in the power amplifier device 16. As shown in FIG. [Diagram 31] FIG. 31 is a diagram for explaining a matching circuit 441c which is a modified example of the matching circuit 441 in the power amplifier circuit 66. As shown in FIG. [Diagram 32] FIG. 32 is a diagram for explaining the arrangement of the power amplifier circuit 67 in the power amplifier device 17. As shown in FIG. [Diagram 33] FIG. 33 is a diagram for explaining the arrangement of the power amplifier circuit 68 in the power amplifier device 18. As shown in FIG. [Diagram 34] FIG. 34 is a diagram for explaining the arrangement of the power amplifier circuit 69 in the power amplifier device 19. As shown in FIG. [Diagram 35] FIG. 35 is a diagram for explaining the arrangement of the power amplifier circuit 70 in the power amplifier device 20. As shown in FIG. [Diagram 36] FIG. 36 is a diagram for explaining the arrangement of the power amplifier circuit 71 in the power amplifier device 21. As shown in FIG. [Figure 37] FIG. 37 is a detailed diagram of the 90-degree phase shift circuit 444 and the output matching circuit 445 shown in FIG. [Figure 38] FIG. 38 is a diagram for explaining the arrangement of the power amplifier circuit 72 in the power amplifier device 22. As shown in FIG. [Figure 39] FIG. 39 is a diagram for explaining a modification of the arrangement of the power amplifier circuit 68 in the power amplifier device 12. In FIG. [Diagram 40] FIG. 40 is a diagram for explaining a modified example of the arrangement of the power amplifier circuit 71 in the power amplifier device 21. In FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. Note that the same elements are given the same reference numerals, and duplicated explanations will be omitted as much as possible.

[0013] [First embodiment] An overview of the RF circuit unit according to the first embodiment will be described. Fig. 1(A) is a plan view of an RF circuit module 300. Fig. 1(B) is a cross-sectional view that illustrates a schematic configuration of a cross section taken along line II-II of the RF circuit module 300 illustrated in Fig. 1(A).

[0014] 1A and 1B, an RF circuit module 300 includes a power amplifier 11 and a molded resin 313. The power amplifier 11 includes a power amplifier (PA) circuit element 301 and a module substrate 310. The PA circuit element 301 includes a first member 110, a second member 210, a first member-side electrode 113, a first conductor protrusion 116 (first member-side conductor protrusion portion), a second member-side electrode 213, a second conductor protrusion 216 (second member-side conductor protrusion portion), and an inter-member connection conductor (not shown). The first conductor protrusion 116 includes a conductor pillar 114 and a solder layer 115. The second conductor protrusion 216 includes a conductor pillar 214 and a solder layer 215.

[0015] Drawings may show an x-axis, a y-axis, and a z-axis. The x-axis, y-axis, and z-axis form a right-handed three-dimensional Cartesian coordinate system. Hereinafter, the direction of the z-axis arrow may be referred to as the z-axis + side, and the direction opposite to the arrow may be referred to as the z-axis - side, and the same applies to the other axes. The z-axis + side and z-axis - side may also be referred to as the "upper side" and "lower side", respectively.

[0016] The module substrate 310 is, for example, a printed circuit board (PCB) such as a glass substrate or an epoxy substrate, and has a rectangular parallelepiped shape. The module substrate 310 includes substrate side electrodes 311 and 312 for mounting components. The mold resin 313 is, for example, an epoxy resin.

[0017] The thermal conductivity of the first member 110 is greater than that of the second member 210. The thickness of the second member 210 is smaller than that of the first member 110. In this embodiment, the first member 110 is, for example, a member made of a simple semiconductor and has a rectangular parallelepiped shape. In detail, the first member 110 is manufactured by an integrated circuit process (hereinafter, sometimes referred to as a first integrated circuit process) using a semiconductor whose main component is a simple group IV element.

[0018] Here, the semiconductor mainly composed of a group IV element is, for example, a semiconductor mainly composed of Si (silicon). The first integrated circuit process is, for example, a complementary metal oxide semiconductor (CMOS) or a bipolar-CMOS (BiCMOS). That is, a circuit (hereinafter, sometimes referred to as a first circuit) is formed in the semiconductor mainly composed of Si (silicon) by the first integrated circuit process. The first member 110 may be manufactured by the first integrated circuit process using a semiconductor mainly composed of SiGe (silicon germanium), C (carbon) or SiC (silicon carbide).

[0019] In this embodiment, the second member 210 is, for example, a compound semiconductor member, and has a rectangular parallelepiped shape. In detail, the second member 210 is manufactured by an integrated circuit process (hereinafter, sometimes referred to as a second integrated circuit process) using a semiconductor mainly composed of a compound of a group III element and a group V element. The semiconductor is, for example, a semiconductor mainly composed of GaAs (gallium arsenide). The second integrated circuit process is, for example, a GaAs heterojunction bipolar transistor (HBT: Heterojunction Bipolar Transistor) or a GaAs pHEMT (Pseudo-morphic High Electron Mobility Transistor). That is, a circuit (hereinafter, sometimes referred to as a second circuit) is formed by a GaAs HBT or a GaAs pHEMT in the semiconductor mainly composed of GaAs. The second circuit includes, for example, an amplifier that amplifies an RF signal (radio frequency signal).

[0020] The second component 210 may be manufactured by a second integrated circuit process using a semiconductor material mainly composed of InP (indium phosphide) (e.g., an InP HBT or an InP pHEMT) or a second integrated circuit process using a semiconductor material mainly composed of GaN (gallium nitride) (e.g., a GaN HBT or a GaN HEMT).

[0021] The first circuit in the first member 110 and the second circuit in the second member 210 are electrically connected by an inter-member connection conductor (not shown) without passing through the module substrate 310. In this embodiment, one aspect of the inter-member connection conductor is, for example, a conductor formed in either one of the first member 110 or the second member 210.

[0022] 2(A) and 2(B) are diagrams showing the manufacturing process of the RF circuit module 300. Fig. 2(A) is a cross-sectional view showing the state immediately before the PA circuit element 301 is mounted on the module substrate 310. Fig. 2(B) is a cross-sectional view showing the state after the PA circuit element 301 has been mounted on the module substrate 310.

[0023] A method for forming the PA circuit element 301 will be described later. A first conductor projection 116 and a second conductor projection 216 are formed on the lower surface of the PA circuit element 301. The first conductor projection 116 and the second conductor projection 216 of the PA circuit element 301 are aligned with the board-side electrode 311 and the board-side electrode 312 of the module board 310, respectively, and heated and pressed, so that the solder layer 115 of the first conductor projection 116 and the solder layer 215 of the second conductor projection 216 of the PA circuit element 301 are connected to the board-side electrode 311 and the board-side electrode 312, respectively, as shown in FIG. 2(B).

[0024] 3 is a diagram showing two heat conduction paths, which are heat dissipation paths from the circuit elements formed on the second member 210 in the RF circuit module 300. In FIG. 3, dashed arrows indicate the two heat conduction paths. The first heat conduction path is formed by the second member side electrode 213 and the second conductor protrusion 216, and heat generated by the circuit elements is dissipated and exhausted to the board side electrode 312 and the module board 310 through this first heat conduction path. The second heat conduction path is a heat conduction path from the second member 210 to the first member 110, and heat generated by the circuit elements is dissipated and exhausted through the second heat conduction path.

[0025] Fig. 4 is a diagram showing a manufacturing method of PA circuit element 301. Steps S1 to S7 in Fig. 4 are cross-sectional views of PA circuit element 301 during the manufacturing process, and step S8 is a cross-sectional view of completed PA circuit element 301. Although actual manufacturing is performed in wafer units, Fig. 4 illustrates a single semiconductor device.

[0026] As shown in Fig. 4, first, a first member 110 is placed. Circuit elements and electrodes have already been formed on the first member 110 in a separate process. If necessary, a bonding layer may be formed on the surface of the first member 110 using a general semiconductor process. This bonding layer is a metal film such as an Au film, a polyimide (PI) film, an organic material film such as polybenzoxazole (PBO) or benzocyclobutene (BCB), or an insulator such as AlN, SiC, or diamond (step S1).

[0027] Next, the second member 210 is joined onto the first member 110. Circuit elements and electrodes have already been formed on the second member 210 in a separate process described below (step S2).

[0028] Next, by a general semiconductor process, the second member side electrode 213 is formed on the second member 210, and the first member side electrode 113 is formed on the first member 110. Also, an inter-member connection conductor (not shown) is formed to electrically connect the first member 110 and the second member 210. If there is no problem with the manufacturing process, the second member side electrode 213, the first member side electrode 113, and the inter-member connection conductor may be formed simultaneously (step S3).

[0029] Next, a resist film 119 is formed so as to have openings in areas where the first conductor projections 116 and the second conductor projections 216 (see FIGS. 2(A) and 2(B)) are to be formed. The first member side electrode 113 or the second member side electrode 213 is exposed from the openings of the resist film 119 (step S4).

[0030] Next, the conductor pillars 114 and 214 are deposited by plating on the first member side electrode 113 and the second member side electrode 213 exposed in the openings of the resist film 119. The conductor pillars 114 and 214 are made of, for example, Cu. The conductor pillars 114 and 214 have a thickness of, for example, 40 μm (step S5).

[0031] Next, solder layers 115 and 215 are deposited by plating on the conductor pillars 114 and 214, respectively, deposited in the openings of the resist film 119. The solder layers 115 and 215 are formed of, for example, a SnAg alloy. The solder layers 115 and 215 have a thickness of, for example, 30 μm. In this manner, the first conductor projection 116 and the second conductor projection 216 are formed (step S6).

[0032] Next, the resist film 119 is removed, and finally, the solder layers 115 and 215 are melted by a reflow process and then solidified (step S7), thereby completing the PA circuit element 301 (step S8).

[0033] A structure in which the conductor pillar 114 is formed of Cu in step S5 and the solder layer 115 is placed on the conductor pillar 114 in step S6, as in the first conductor protrusion 116, is called a "Cu pillar bump (CPB: Copper Pillar Bump)". Note that the first conductor protrusion 116 may have a structure in which solder is not placed on the upper surface, as in the case of an Au bump. A protrusion with such a structure is also called a "pillar". The first conductor protrusion 116 may have a structure in which a conductor pillar is erected on a pad. A conductor protrusion with such a structure is also called a "post". The first conductor protrusion 116 may be a ball bump formed by reflowing solder into a ball shape. In addition to these various structures, various structures including a conductor protruding from a substrate may be used as the conductor protrusion. The second conductor protrusion 216 may also have the same structure as the first conductor protrusion 116.

[0034] Fig. 5 is a diagram for explaining a method for manufacturing the second member 210 and a method for bonding the second member 210 to the first member 110. Fig. 5 shows perspective views of each process. Although the actual manufacturing is performed in wafer units, Fig. 5 illustrates a single semiconductor device.

[0035] 5, first, a release layer 212 is formed on a mother substrate 211, which is a compound semiconductor member, and a semiconductor thin film is formed by epitaxial growth on the surface on the z-axis negative side of this release layer 212. Then, a plurality of circuit elements and electrodes connected to the circuit elements are formed on this semiconductor thin film. This portion becomes the second member 210 (step S11).

[0036] Next, a process is performed to selectively etch only the peeling layer 212, so that the second member 210 (semiconductor thin film piece) is peeled off from the mother substrate 211 (step S12).

[0037] Next, the second member 210 is bonded to the first member 110. That is, the semiconductor thin film piece is transferred, that is, moved and fixed, from the mother substrate 211 to the first member 110. In this embodiment, the first member 110 and the second member 210 are bonded by van der Waals bonds or hydrogen bonds (step S13).

[0038] The first member 110 and the second member 210 may be bonded together by electrostatic force, covalent bonding, or eutectic alloy bonding. The first member 110 and the second member 210 may also be bonded together by eutectic formation using an Au film. Specifically, an Au film is formed on the first member 110 as a bonding layer in a separate process. The second member 210 is pressed against and adhered to the surface of the bonding layer, so that the Au of the bonding layer diffuses into the GaAs layer of the second member, and Au and GaAs form a eutectic. This bonds the first member 110 and the second member 210 together.

[0039] The formation of circuit elements and electrodes on the second member 210 may be performed not only by the step shown in step S11, but also by a process (photolithography and etching process) on the second member 210 after the second member 210 is bonded to the first member 110, as shown in step S14.

[0040] Hereinafter, the wiring formed after the second member 210 and the first member 110 are joined may be referred to as rewiring. Some rewirings electrically connect a first circuit in the first member 110 and a second circuit in the second member 210 without passing through the module substrate 310. Such rewiring is one aspect of an inter-member connection conductor.

[0041] The following method can be applied as the method of peeling and transferring the semiconductor thin film piece, for example. That is, in step S11 of FIG. 5, a support is attached to the z-axis negative side of the formed second member 210. Then, as shown in step S12 of FIG. 5, when the second member 210 (semiconductor thin film piece) is peeled off from the mother substrate 211, the second member 210 is peeled off from the mother substrate 211 while the second member 210 is supported by the support. Also, as shown in step S13 of FIG. 5, the bonding of the second member 210 to the first member 110 is performed while the second member 210 is supported by the support. After the second member 210 is bonded to the first member 110, the support is peeled off from the second member 210. In steps S11 to S13 of FIG. 5, the illustration of the support is omitted for the convenience of clearly showing the second member 210.

[0042] The RF circuit module 300 of this embodiment configured as above provides the following advantages.

[0043] (a) Since the first component 110 is flip-chip bonded (mounted face down) to the module substrate 310, no space is required for arranging wire-bonding pads and wires, so the overall size of the RF circuit module 300 can be reduced.

[0044] (b) The first member 110 has a first conductor projection 116 connected to the substrate-side electrode 311 of the module substrate 310, and the second member 210 has a second conductor projection 216 connected to the substrate-side electrode 312 of the module substrate 310, so that the first circuit formed in the first member 110 and the second circuit formed in the second member 210 are each electrically connected to the module substrate 310. In addition, the first circuit and the second circuit are electrically connected by the inter-member connecting conductor without passing through the module substrate 310, so that there is no need to form wiring for connecting the first circuit and the second circuit on the module substrate 310. As a result, the overall size of the RF circuit module 300 can be reduced.

[0045] (c) Since heat generated by amplifiers and the like included in the second circuit formed in the second member 210 can be dissipated and removed with high efficiency, it is possible to realize an RF circuit module 300 that is miniaturized without being restricted by heat dissipation performance, or an RF circuit module 300 that is compact yet has high heat dissipation performance.

[0046] [Power amplifier circuit] A power amplifier circuit according to a first embodiment will be described. Fig. 6 is a circuit diagram of a power amplifier circuit 61. As shown in Fig. 6, the power amplifier circuit 61 includes a first circuit 400, a second circuit 500, and a matching circuit 601 (first matching circuit). The first circuit 400 includes an amplifier control circuit 401 and a termination circuit 411 (first termination circuit). The second circuit 500 includes an amplifier 501 (first amplifier) ​​and a bias circuit 502. The bias circuit 502 includes a bias transistor 503, transistors 504 and 505, a resistive element 506, and a current source 507.

[0047] The power amplifier circuit 61 is a circuit that amplifies an input signal RFin (RF signal) inputted from an input terminal 31 and outputs an output signal RFout from an output terminal 32.

[0048] In this embodiment, the amplifier 501, the bias transistor 503, and the transistors 504 and 505 are described as being configured by bipolar transistors such as HBTs. Note that the amplifier 501, the bias transistor 503, and the transistors 504 and 505 may each be configured by other transistors such as a field effect transistor (MOSFET: Metal-oxide-semiconductor Field-Effect Transistor). In that case, the base, collector, and emitter may be read as the gate, drain, and source, respectively.

[0049] Amplifier 501 has a base connected to input terminal 31, a collector connected to power supply voltage supply node N2 that supplies power supply voltage Vcc1 and connected to output terminal 32 via matching circuit 601, and a grounded emitter. Amplifier 501 amplifies input signal RFin supplied via input terminal 31, and outputs an amplified signal (first amplified signal) after amplification.

[0050] The bias circuit 502 supplies a bias to the base of the amplifier 501 by a bias transistor 503 that is emitter-follower connected to the base of the amplifier 501. In detail, the bias transistor 503 has a collector connected to a power supply voltage supply node N1 that supplies a power supply voltage Vcc0, a base, and an emitter connected to the base of the amplifier 501 through a resistive element 506.

[0051] The transistors 504 and 505 and the current source 507 supply a bias having a predetermined voltage level to the base of the bias transistor 503. Specifically, the current source 507 is connected to the base of the bias transistor 503. The transistor 504 has a collector connected to the current source 507 and the base of the bias transistor 503, a base connected to the collector, and an emitter. Hereinafter, the connection between the collector and the base of a transistor may be referred to as a diode connection. The transistor 505 is diode-connected and has a collector connected to the emitter of the transistor 504 and a grounded emitter. Since each of the transistors 504 and 505 functions as a diode, a voltage drop of two diodes occurs in the path between the collector and emitter of the transistor 504 and the path between the collector and emitter of the transistor 505. In other words, the voltage of the collector and base of the transistor 504 when the ground is used as a reference is a voltage level equivalent to the voltage drop of two diodes. This voltage is supplied to the base of biasing transistor 503 .

[0052] The amplifier control circuit 401 controls the amplifying operation of the second circuit 500. In this embodiment, the amplifier control circuit 401 controls a power supply voltage Vcc1 applied to the collector of the amplifier 501. The amplifier control circuit 401 also controls a power supply voltage Vcc0 applied to the collector of the bias transistor 503 and a current Ib output by a current source 507. This controls the level of the bias supplied to the base of the amplifier 501.

[0053] The termination circuit 411 attenuates harmonic components that are integer multiples (e.g., two or more) of the fundamental frequency of the output signal RFout. In this embodiment, the termination circuit 411 is an LC series circuit having a capacitor 411a and an inductor 411b (first inductor). The capacitor 411a has a first end connected to the collector of the amplifier 501, and a second end. The inductor 411b has a first end connected to the second end of the capacitor 411a, and a second end grounded.

[0054] The matching circuit 601 adjusts the impedance of the fundamental wave of the output signal RFout when the amplifier 501 is viewed from the amplifier 501. In other words, the matching circuit 601 is provided between the amplifier 501 and the circuit at the rear stage, and matches the impedance between the amplifier 501 and the circuit at the rear stage. In this embodiment, the matching circuit 601 is provided between the collector of the amplifier 501 and the output terminal 32, and is an LC series circuit having a capacitor 601a and an inductor 601b. The capacitor 601a has a first end connected to the collector of the amplifier 501 and a second end. The inductor 601b has a first end connected to the second end of the capacitor 601a and a second end connected to the output terminal 32.

[0055] Fig. 7 is a diagram for explaining the arrangement of the power amplifier circuit 61 in the power amplifier device 11. Fig. 7 shows a schematic diagram of the arrangement of the power amplifier circuit 61 in a cross section of the power amplifier device 11.

[0056] 7, the amplifier control circuit 401 and the termination circuit 411 are provided in the first member 110. The amplifier 501 and the bias circuit 502 are provided in the second member 210. The input terminal 31, the output terminal 32, and the matching circuit 601 are provided on the module substrate 310, for example.

[0057] The termination circuit 411 is connected to the collector of the amplifier 501 through the inter-member connecting conductor 351a. The inter-member connecting conductor 351a is one embodiment of the inter-member connecting conductor. The base of the amplifier 501 is connected to the bias circuit 502 and is connected to the input terminal 31 through the second conductor protrusion 216. The emitter of the amplifier 501 is grounded on the module substrate 310 through the second conductor protrusion 216. The collector of the amplifier 501 is connected to the output terminal 32 through the second conductor protrusion 216 and the matching circuit 601.

[0058] Although the power amplifier circuit 61 has been described as including one amplifier 501, the present invention is not limited to this. The power amplifier circuit 61 may include a plurality of amplifiers 501. Specifically, for example, the power amplifier circuit 61 may be configured such that a first-stage amplifier is provided between the input terminal 31 and the amplifier 501.

[0059] Layout The layout of the power amplifying device according to the first embodiment will be described. Fig. 8 is a diagram showing an example of the layout of the first circuit 400 in the first member 110. Fig. 9 is a diagram showing an example of the layout of electrodes provided on the z-axis negative side of the first member 110 and the second member 210. Fig. 10 is a diagram showing an example of the layout of the second circuit 500 in the second member 210. Fig. 11 is an enlarged view of the vicinity of the amplifier 501 and the heat spreader 131. Figs. 8 to 11 are, for example, plan views of the first member 110 or the second member 210 when viewed from the z-axis negative side.

[0060] 8 to 11, capacitor 411a constituting termination circuit 411 in first circuit 400 is provided approximately in the center of first member 110 (see FIG. 8). Inductor 411b is provided on the negative y-axis side of capacitor 411a.

[0061] On the +y-axis side of the capacitor 411a, there is located a substantially rectangular region 252 to which the second member 210 is joined (see FIG. 8). On the +y-axis side and +x-axis side of the capacitor 411a, there is provided an amplifier control circuit 401 so as to partially overlap with the region 252. On the -x-axis side of the amplifier control circuit 401, there is provided a heat spreader 131. Details of the heat spreader 131 will be described later. The amplifier 501 is provided so as to partially overlap with the heat spreader 131 when the first member 110 is viewed in plan from the -z-axis side (see FIG. 11).

[0062] A plurality of first conductor protrusions 116 are provided on the inside of the edge of the first member 110 (see FIG. 9). The first member 110 may be configured to have one first conductor protrusion 116. A plurality of second conductor protrusions 216 are provided on the inside of the region 252. A second conductor protrusion 216a of the plurality of second conductor protrusions 216 is provided so as to overlap with the amplifier 501 when the first member 110 is viewed in plan from the z-axis negative side (see FIG. 11). The inter-member connection conductor 351a connects the collector of the amplifier 501 and a first end of the capacitor 411a. The second member 210 may be configured to have one second conductor protrusion 216.

[0063] A bias circuit 502 in a second circuit 500 is provided on the positive side of the x-axis of the second member 210 (see FIG. 10). An amplifier 501 is provided on the negative side of the bias circuit 502 on the x-axis.

[0064] In detail, transistors 504 and 505 are provided near the edge on the +x-axis side of the second member 210. A bias transistor 503 is provided on the -x-axis side of the transistors 504 and 505. A resistive element 506 is provided on the -x-axis side and -y-axis side of the bias transistor 503 so as to extend toward the -y-axis side.

[0065] An amplifier 501 is formed on the negative side of the x-axis of resistor element 506. Amplifier 501 includes a plurality of transistor elements aligned in the y-axis direction. Here, the transistor element located closest to the positive side of the y-axis is sometimes referred to as transistor element 501a.

[0066] Fig. 12 is a cross-sectional view taken along the cutting line XII-XII shown in Fig. 11. As shown in Fig. 11 and Fig. 12, the first member 110 includes a Si substrate 121, a first insulating film 122, a second insulating film 123, and a third insulating film 124, which are stacked in this order toward the negative side of the z axis.

[0067] An amplifier 501 is formed in the second member 210. An interlayer insulating film 224 is provided on the z-axis negative side of the amplifier 501. In detail, a transistor element (e.g., transistor element 501a) included in the amplifier 501 includes a collector layer 221C, a base layer 221B, and an emitter layer 221E, which are stacked in this order from the substrate 121 side.

[0068] More specifically, the collector layer 221C is bonded to the surface on the negative z-axis side of the first member 110. On the negative z-axis side of the collector layer 221C, a base layer 221B and a collector electrode 222C connected to the collector layer 221C are provided. On the negative z-axis side of the base layer 221B, an emitter layer 221E and a base electrode 222B connected to the base layer 221B are provided. On the negative z-axis side of the emitter layer 221E, an emitter electrode 222E connected to the emitter layer 221E is provided. On the negative z-axis side of the emitter electrode 222E, for example, an emitter wiring 223E is provided to electrically connect the emitter electrodes 222E of the transistor elements aligned in the y-axis direction.

[0069] The collector layer 221C, the base layer 221B, and the emitter layer 221E are formed of, for example, n-type GaAs, p-type GaAs, and n-type InGaP, respectively. These semiconductor layers may be formed of other compound semiconductors, for example, InP, GaN, SiGe, SiC, etc.

[0070] A first insulating film 225 is provided on the surface of the third insulating film 124 on the negative side of the z axis so as to cover the interlayer insulating film 224. An opening is provided in the interlayer insulating film 224 and the first insulating film 225 so as to communicate with the emitter wiring 223E from the negative side of the z axis. The emitter pad 213a is electrically connected to the emitter wiring 223E through the opening. The emitter pad 213a protrudes from the first insulating film 225 to the negative side of the z axis. The emitter pad 213a is one aspect of the second member side electrode 213 and is also a part of the rewiring.

[0071] A second insulating film 226 is provided on the surface of the first insulating film 225 on the negative side of the z axis. An opening is provided in the second insulating film 226 so as to communicate with the emitter pad 213a from the negative side of the z axis. A second conductor protrusion 216a is connected to the emitter pad 213a through the opening. The second conductor protrusion 216a protrudes from the second insulating film 226 on the negative side of the z axis.

[0072] In the first member 110, a heat spreader 131 is provided on the z-axis + side of the amplifier 501. The heat spreader 131 is formed by laminating a conductor layer and an insulator layer. In detail, the heat spreader 131 includes first member electrodes 132a and 132b extending substantially parallel to the xy plane, and rod-shaped first member vias 133a and 133b extending in the z-axis direction. The first member electrode 132a is formed on the surface of the second insulating film 123 on the z-axis - side. The first member electrode 132b is formed on the surface of the first insulating film 122 on the z-axis - side. The first member via 133a connects the first member electrode 132a and the first member electrode 132b. The first member via 133b protrudes from the first member electrode 132b to the z-axis + side.

[0073] Heat generated in the amplifier 501 is dissipated to the module substrate 310 (not shown in FIG. 12) through the emitter electrode 222E, the emitter wiring 223E, the emitter pad 213a, and the second conductor protrusion 216a, and is also dissipated to the substrate 121 through the third insulating film 124 and the heat spreader 131. Since the substrate 121 is made of Si, which has a high thermal conductivity, the heat from the amplifier 501 is dissipated well in the first member 110.

[0074] Fig. 13 is a cross-sectional view taken along line XIIV-XIIV shown in Fig. 11. As shown in Fig. 11 and Fig. 13, a first conductor protrusion 116a is provided on the y-axis + side of the amplifier 501. The first conductor protrusion 116a is connected to the first component electrode 132a of the heat spreader 131 through the first component side electrode 113a. The first component side electrode 113a is a part of the rewiring.

[0075] In detail, the first component side electrode 113a is connected to the first component electrode 132a of the heat spreader 131 through an opening provided in the first insulating film 225 and the third insulating film 124. The first conductor protrusion 116a is connected to the first component side electrode 113a through an opening provided in the second insulating film 226.

[0076] Of the heat generated in the amplifier 501, the heat conducted to the heat spreader 131 not only moves to the Si substrate 121 and is dissipated, but also moves to the module substrate 310 (not shown in FIG. 13) through the first component side electrode 113a and the first conductor protrusion 116a and is dissipated. In this way, by providing a path for efficiently conducting heat from the heat spreader 131 to the module substrate 310, the heat generated in the amplifier 501 can be effectively dissipated.

[0077] Fig. 14 is an enlarged view of the vicinity of the termination circuit 411. Fig. 15 is a cross-sectional view taken along the line XV-XV shown in Fig. 14. As shown in Fig. 14 and Fig. 15, the inter-member connection conductor 351a has a rewiring 351aa and a rewiring via 351ab, and is connected to the capacitor 411a.

[0078] In detail, the capacitor 411a has a metal-insulator-metal (MIM) structure formed by a first member metal wiring 132ca and a first member electrode 132cb extending parallel to the xy plane, and a second insulating film 123 filled between them.

[0079] More specifically, the first member metal wiring 132ca is formed on the surface of the z-axis negative side of the first insulating film 122, and has a rectangular shape when viewed from the z-axis positive side, and serves as the z-axis positive side electrode of the capacitor 411a. The first member electrode 132cb is formed on the z-axis negative side of the first member metal wiring 132ca, and has a rectangular shape when viewed from the z-axis positive side, and serves as the z-axis negative side electrode of the capacitor 411a, at a predetermined distance from the first member metal wiring 132ca. When viewed from the z-axis positive side, the outline of the first member electrode 132cb is located inside the outline of the first member metal wiring 132ca. The second insulating film 123 is filled around the first member metal wiring 132ca and the first member electrode 132cb.

[0080] A first member electrode 132cd having a rectangular shape when viewed from the z-axis + side is formed on the surface of the second insulating film 123 on the z-axis - side. A first member via 133ca connecting the first member electrode 132cd and the first member electrode 132cb is provided in an opening provided in the second insulating film 123.

[0081] A rewiring 351aa constituting an inter-member connection conductor 351a is provided on the z-axis negative surface of the first insulating film 225. A rewiring via 351ab connecting the rewiring 351aa and the first member electrode 132cd is provided in an opening provided in the third insulating film 124 and the first insulating film 225.

[0082] Fig. 16 is a cross-sectional view taken along line XVI-XVI shown in Fig. 14. As shown in Fig. 14 and Fig. 16, the inductor 411b is formed by a first member metal wiring 132ce. In detail, the first member metal wiring 132ce is formed on the surface of the first insulating film 122 on the negative side of the z-axis so as to wind in the xy plane.

[0083] A first member metal wiring 132cc extending in the y-axis direction is formed on the surface of the second insulating film 123 on the negative side of the z-axis when viewed in plan from the positive side of the z-axis. An opening is provided in the second insulating film 123 so as to communicate with the first member metal wiring 132ca from the negative side of the z-axis. A first member via 133cb connecting the first member metal wiring 132ca and the first member metal wiring 132cc is provided in the opening.

[0084] An opening is further provided in the second insulating film 123 so as to reach the vicinity of one end (first end) of the first member metal wiring 132ce from the z-axis negative side. A first member via 133cc that connects one end of the first member metal wiring 132ce and the first member metal wiring 132cc is provided in the opening.

[0085] The first member metal wiring 132ce is provided in a wound manner between one end of the first member metal wiring 132ce and the first member metal wiring 132ca.

[0086] [Second embodiment] A power amplifier device and a power amplifier circuit according to the second embodiment will be described. From the second embodiment onwards, a description of matters common to the first embodiment will be omitted, and only the differences will be described. In particular, similar effects due to similar configurations will not be mentioned in each embodiment.

[0087] Fig. 17 is a circuit diagram of a power amplifier circuit 62. As shown in Fig. 17, the power amplifier circuit 62 according to the second embodiment is different from the power amplifier circuit 61 according to the first embodiment in that it further includes an input-side matching circuit and that the frequency bands of the termination circuit, the output-side matching circuit, and the input-side matching circuit are changeable.

[0088] The power amplifier circuit 62 includes a first circuit 400, a second circuit 500, and inductors 651 (third inductor), 652 (fourth inductor), and 653 (fifth inductor). The first circuit 400 includes an amplifier control circuit 401, a switch control circuit 402, capacitors 421, 422, and 423, and switches 431, 432, 433, 434, 435, and 436. The second circuit 500 includes an amplifier 501 and a bias circuit 502.

[0089] The amplifier control circuit 401, the switch control circuit 402, the capacitors 421, 422, and 423, and the switches 431, 432, 433, 434, 435, and 436 are formed in the first member 110. The amplifier 501 and the bias circuit 502 are formed in the second member 210. The inductors 651, 652, and 653 are formed by rewiring, and will be described in detail later. The switches 431, 432, 433, 434, 435, and 436 are, for example, field effect transistors.

[0090] The termination circuit 701 (first termination circuit) is configured by the capacitor 421, the inductor 651, and the switches 431 and 432. The termination circuit 701 attenuates harmonic components that are an integer multiple (e.g., two or more times) of the frequency of the output signal RFout. In the termination circuit 701, the frequency of the harmonic components to be attenuated is switched by the switches 431 and 432.

[0091] In particular, capacitor 421 has a first end connected to the collector of amplifier 501, and a second end. Inductor 651 has a first end connected to the second end of capacitor 421, a center tap 651a, and a second end. Switch 431 has a first end connected to center tap 651a, and a second end connected to ground. Switch 432 has a first end connected to the second end of inductor 651, and a second end connected to ground.

[0092] The switches 431 and 432 operate based on signals B1 and B2 received from the switch control circuit 402, respectively. Specifically, each of the switches 431 and 432 switches between conduction and non-conduction between its first terminal and second terminal. In this embodiment, the switches 431 and 432 operate exclusively. Specifically, when the switch 431 is off (the first terminal and the second terminal are non-conductive), the switch 432 is on (the first terminal and the second terminal are conductive), which is a first state, and when the switch 431 is on, the switch 432 is off (the second state).

[0093] The resonant frequency of termination circuit 701 in the first state is smaller than the resonant frequency in the second state, so that the first state is suitable for attenuating low frequency components, while the second state is suitable for attenuating high frequency components.

[0094] In this embodiment, the switch control circuit 402 performs control to transition the termination circuit 701 to a first state when the frequency band to which the output signal RFout belongs is low, and to transition the termination circuit 701 to a second state when the frequency band to which the output signal RFout belongs is high. Note that the switch control circuit 402 may perform control to transition the termination circuit 701 to the second state when the frequency band to which the output signal RFout belongs is low, and to transition the termination circuit 701 to the first state when the frequency band to which the output signal RFout belongs is high.

[0095] Furthermore, termination circuit 701 may have a configuration in which the second end of inductor 651 is directly grounded without including switch 432. Even with such a configuration, it is possible to switch the frequency of the harmonic components to be attenuated.

[0096] Matching circuit 702 (first matching circuit) is configured by capacitor 422, inductor 652, and switches 433 and 434. Matching circuit 702 adjusts the impedance (hereinafter sometimes referred to as first impedance) for the fundamental wave of output signal RFout when amplifier 501 sees the circuit downstream of amplifier 501. In matching circuit 702, the first impedance is switched by switches 433 and 434.

[0097] In particular, capacitor 422 has a first end connected to the collector of amplifier 501, and a second end. Inductor 652 has a first end connected to the second end of capacitor 422, an intermediate tap 652a, and a second end. Switch 433 has a first end connected to intermediate tap 652a, and a second end connected to output terminal 32. Switch 434 has a first end connected to the second end of inductor 652, and a second end connected to output terminal 32.

[0098] The switches 433 and 434 operate based on signals B3 and B4, respectively, received from the switch control circuit 402. In this embodiment, the switches 433 and 434 operate exclusively. Specifically, when the switch 433 is off, the switch 434 is on, which is a third state, and when the switch 433 is on, the switch 434 is off, which is a fourth state.

[0099] In general, the impedance of the inductor 652 increases as the frequency increases, so that the first impedance when the matching circuit 702 is in the third state is greater than the first impedance when the matching circuit 702 is in the fourth state. In other words, the third state is suitable for impedance matching between the amplifier 501 and a subsequent circuit when the frequency band to which the output signal RFout belongs is low, whereas the fourth state is suitable for impedance matching between the amplifier 501 and a subsequent circuit when the frequency band to which the output signal RFout belongs is high.

[0100] In this embodiment, the switch control circuit 402 performs control to transition the matching circuit 702 to the third state when the frequency band to which the output signal RFout belongs is low, and to the fourth state when the frequency band to which the output signal RFout belongs is high. Note that the switch control circuit 402 may perform control to transition the matching circuit 702 to the fourth state when the frequency band to which the output signal RFout belongs is low, and to transition the matching circuit 702 to the third state when the frequency band to which the output signal RFout belongs is high.

[0101] Furthermore, the matching circuit 702 may have a configuration in which the second end of the inductor 652 and the output terminal 32 are directly connected to each other without including the switch 434. Even in such a configuration, it is possible to switch the first impedance.

[0102] Matching circuit 703 (second matching circuit) is configured by capacitor 423, inductor 653, and switches 435 and 436. Matching circuit 703 adjusts the impedance (hereinafter sometimes referred to as second impedance) for the fundamental wave of input signal RFin when amplifier 501 is seen from input terminal 31. In matching circuit 703, the second impedance is switched by switches 435 and 436.

[0103] In particular, switch 435 has a first end connected to input terminal 31 and a second end. Switch 436 has a first end connected to input terminal 31 and a second end. Inductor 653 has a first end connected to the second end of switch 436, a center tap 652a connected to the second end of switch 435, and a second end. Capacitor 423 has a first end connected to the second end of inductor 653 and a second end connected to the base of amplifier 501.

[0104] The switches 435 and 436 operate based on signals B5 and B6, respectively, received from the switch control circuit 402. In this embodiment, the switches 435 and 436 operate exclusively. Specifically, when the switch 435 is off, the switch 436 is on, which is a fifth state, and when the switch 435 is on, the switch 436 is off, which is a sixth state.

[0105] In general, the impedance of inductor 653 increases as the frequency increases, so the second impedance when matching circuit 703 is in the fifth state is greater than the second impedance when matching circuit 703 is in the sixth state. That is, the fifth state is suitable for impedance matching between amplifier 501 and a preceding circuit when the frequency band to which input signal RFin belongs is low, while the sixth state is suitable for impedance matching between amplifier 501 and a preceding circuit when the frequency band to which input signal RFin belongs is high.

[0106] In this embodiment, the switch control circuit 402 performs control to transition the matching circuit 703 to the fifth state when the frequency band to which the input signal RFin belongs is low, and to the sixth state when the frequency band to which the input signal RFin belongs is high. Note that the switch control circuit 402 may perform control to transition the matching circuit 703 to the sixth state when the frequency band to which the input signal RFin belongs is low, and to transition the matching circuit 703 to the fifth state when the frequency band to which the input signal RFin belongs is high.

[0107] Furthermore, matching circuit 703 may have a configuration in which input terminal 31 and the first end of inductor 653 are directly connected without including switch 436. Even in such a configuration, it is possible to switch the second impedance.

[0108] Layout The layout of the power amplifying device 12 according to the second embodiment will be described. Fig. 18 is a diagram showing an example of the layout of the first circuit 400 in the first member 110. Fig. 19 is a diagram showing an example of the layout of electrodes provided on the z-axis negative side of the first member 110 and the second member 210. Figs. 18 and 19 are plan views of the first member 110 or the second member 210 when viewed from the z-axis negative side, for example. For ease of understanding, Fig. 18 shows the position of the amplifier 501 in the second circuit 500. Fig. 19 shows the positions of the capacitors 421, 422, and 423.

[0109] 18 and 19, in the power amplifier device 12, the capacitor 421 in the first circuit 400 is provided on the negative x-axis side of the approximate center of the first member 110. An inductor 651 and switches 431 and 432 are provided on the negative y-axis side of the capacitor 421. The capacitor 423 is provided on the positive x-axis side of the approximate center of the first member 110. An inductor 653 and switches 435 and 436 are provided on the negative y-axis side of the capacitor 423. The capacitor 422 is provided on the positive y-axis side of the approximate center of the first member 110. An inductor 652 and switches 433 and 434 are provided on the negative x-axis side of the capacitor 422.

[0110] A switch control circuit 402 is provided on the +y-axis side of the capacitor 423 (see FIG. 18). A substantially rectangular region 253 to which the second member 210 is joined is located on the +y-axis side of the switch control circuit 402. An amplifier control circuit 401 is provided on the +y-axis side of the switch control circuit 402 so as to partially overlap with the region 253. A heat spreader 131 is provided on the -x-axis side of the amplifier control circuit 401. An amplifier 501 is provided so as to partially overlap with the heat spreader 131 when the first base material 110 is viewed in plan from the -z-axis side.

[0111] The switches 431 and 432 are connected to the switch control circuit 402 through the first member metal wirings 132ia and 132ib, respectively. Signals B1 and B2 are transmitted to the first member metal wirings 132ia and 132ib, respectively. The switches 433 and 434 are connected to the switch control circuit 402 through the first member metal wirings 132ic and 132id, respectively. Signals B3 and B4 are transmitted to the first member metal wirings 132ic and 132id, respectively. The switches 435 and 436 are connected to the switch control circuit 402 through the first member metal wirings 132ie and 132if, respectively. Signals B5 and B6 are transmitted to the first member metal wirings 132ie and 132if, respectively.

[0112] Inter-component connection conductor 351b connects the collector of amplifier 501 and a first end of capacitor 421 (see FIG. 19). Inter-component connection conductor 351c connects the collector of amplifier 501 and a first end of capacitor 422. Inter-component connection conductor 351d connects the base of amplifier 501 and a second end of capacitor 423. Inter-component connection conductors 351b, 351c, and 351d are one aspect of inter-component connection conductors.

[0113] The inductors 651, 652, and 653 are respectively formed by the rewirings 351e, 351f, and 351g. The rewirings 351e, 351f, and 351g will be described in detail later.

[0114] Fig. 20 is a diagram showing an example of the layout of the second circuit 500 in the second member 210. Fig. 20 can be viewed in the same way as Fig. 18. As shown in Fig. 20, the layout of the second circuit 500 is substantially the same as the layout of the second circuit 500 according to the first embodiment (see Fig. 10).

[0115] Fig. 21 is an enlarged view of the matching circuit 703 and its vicinity in Fig. 19. Fig. 22 is a cross-sectional view taken along the cutting line XXII-XXII shown in Fig. 21. As shown in Figs. 21 and 22, the inter-component connection conductor 351d has a rewiring 351da and a rewiring via 351db, and is connected to a first end of the capacitor 423. The shapes and arrangement of the rewiring 351da and the rewiring via 351db are similar to those of the rewiring 351aa and the rewiring via 351ab shown in Figs. 14 and 15, respectively.

[0116] The capacitor 423 has an MIM structure formed by a first member metal wiring 132da and a first member electrode 132db extending parallel to the xy plane, and a second insulating film 123 filled between them. The first member metal wiring 132da and the first member electrode 132db are similar to the first member metal wiring 132ca and the first member electrode 132cb shown in FIGS. 14 to 16, respectively.

[0117] Furthermore, the surrounding first component metal wiring 132dc, first component electrode 132dd, and first component vias 133da and 133db (see FIG. 22) are similar to the first component metal wiring 132cc, first component electrode 132cd, and first component vias 133ca and 133cb shown in FIGS. 14 and 15, respectively.

[0118] The first member via 133dc (see FIG. 21) connects the first member electrode metal wiring 132dc provided on the surface of the second insulating film 123 on the z-axis negative side, and the rewiring 351g that constitutes the inductor 653. The rewiring 351g is provided on the surface of the first insulating film 225 on the z-axis negative side, as will be described in detail later.

[0119] For each of the capacitors 421 and 422 , the structure and surrounding electrodes are similar to that of the capacitor 423 .

[0120] Fig. 23 is an enlarged view of the vicinity of the termination circuit 701 in Fig. 19. Fig. 24 is a cross-sectional view taken along the cutting line XXIV-XXIV shown in Fig. 23. As shown in Figs. 23 and 24, the rewiring 351e constituting the inductor 651 is provided so as to wind in the xy plane on the surface of the first insulating film 225 on the negative side of the z axis. The switch 431 is provided on the substrate 121, the first insulating film 122, and the second insulating film 123.

[0121] Fig. 25 is a cross-sectional view taken along line XXV-XXV shown in Fig. 23. As shown in Fig. 23 and Fig. 25, the center tap 651a of the inductor 651 is connected to the switch 431 through the rewiring via 351h, the first member metal wiring 132e, and the first member via 133e.

[0122] In detail, the first member metal wiring 132e is formed on the surface on the z-axis negative side of the second insulating film 123. The first member via 133e is provided in an opening provided in the first insulating film 122 and the second insulating film 123, and connects the first member metal wiring 132e and the first end of the switch 431. The rewiring via 351h is provided in an opening provided in the first insulating film 225 and the third insulating film 124, and connects the intermediate tap 651a and the first member metal wiring 132e.

[0123] For each of the inductors 652 and 653 , the structure and surrounding electrodes are similar to that of the inductor 651 .

[0124] [Third embodiment] A power amplifier device and a power amplifier circuit according to the third embodiment will be described. Fig. 26 is a diagram for explaining the arrangement of the power amplifier circuit 63 in the power amplifier device 13. Fig. 26 shows a schematic arrangement of the power amplifier circuit 63 in a cross section of the power amplifier device 13. As shown in Fig. 26, the power amplifier circuit 63 according to the third embodiment differs from the power amplifier circuit 61 according to the first embodiment in that the capacitance of the capacitor in the termination circuit is changeable.

[0125] Compared to the first circuit 400 in the power amplifier circuit 61 (see FIG. 7), the first circuit 400 in the power amplifier circuit 63 includes a termination circuit 412 instead of the termination circuit 411, and further includes a switch control circuit 402.

[0126] The termination circuit 412 includes capacitors 412aa and 412ab, an inductor 412b, and switches 412ca and 412cb.

[0127] The inductor 412b has a first end connected to the collector of the amplifier 501 in the second member 210 through the inter-member connecting conductor 351i, and a second end. The capacitor 412aa has a first end connected to the second end of the inductor 412b, and a second end. The switch 412ca has a first end connected to the second end of the capacitor 412aa, and a second end grounded. The capacitor 412ab has a first end connected to the second end of the inductor 412b, and a second end. The switch 412cb has a first end connected to the second end of the capacitor 412ab, and a second end grounded. The inter-member connecting conductor 351i is, for example, a wiring such as the inter-member connecting conductor 351a (see FIG. 9).

[0128] The switches 412ca and 412cb are similar to the switch 431 and operate based on signals B7 and B8, respectively, received from the switch control circuit 402. In this embodiment, the switch control circuit 402 controls the switches 412ca and 412cb so that the combined capacitance of the capacitors 412aa and 412ab becomes large when the frequency band to which the output signal RFout belongs is low. Specifically, the switch control circuit 402 turns on both the switches 412ca and 412cb.

[0129] On the other hand, the switch control circuit 402 controls the switches 412ca and 412cb so that the combined capacitance of the capacitors 412aa and 412ab becomes smaller when the frequency band to which the output signal RFout belongs is high. Specifically, the switch control circuit 402 turns on one of the switches 412ca and 412cb.

[0130] In addition, the switch control circuit 402 may be configured to control the switches 412ca and 412cb so that the combined capacitance of the capacitors 412aa and 412ab becomes small when the frequency band to which the output signal RFout belongs is low, and the combined capacitance becomes large when the frequency band to which the output signal RFout belongs is high.

[0131] Furthermore, although the termination circuit 412 has been described as including two pairs of the capacitor 412aa and the switch 412ca, the termination circuit 412 may include three or more such pairs.

[0132] Furthermore, termination circuit 412 may have a configuration in which an inductor is provided instead of a capacitor, and a capacitor is provided instead of an inductor.

[0133] Also, a configuration may be adopted in which a part of the termination circuit 412 is provided outside the first member 110. Specifically, for example, a configuration may be adopted in which an inductor (second inductor) such as a rewiring 351e (see FIG. 19) is provided as an inter-member connecting conductor 351i, so that a part of the inductor is provided outside the first member 110. Also, for example, a configuration may be adopted in which the inductor 412b is not provided, and the first end of the capacitor 412aa and the first end of the capacitor 412ab are connected to an inter-member connecting conductor 351i serving as an inductor (second inductor) such as a rewiring 351e, so that the entire inductor is provided outside the first member 110.

[0134] [Fourth embodiment] A power amplifier device and a power amplifier circuit according to a fourth embodiment will be described. Fig. 27 is a diagram for explaining the arrangement of the power amplifier circuit 64 in the power amplifier device 14. Fig. 27 illustrates a schematic arrangement of the power amplifier circuit 64 in a cross section of the power amplifier device 14. As shown in Fig. 27, the power amplifier device 14 according to the fourth embodiment differs from the power amplifier device 11 according to the first embodiment in that a matching circuit is provided in the first member 110.

[0135] Compared to the first circuit 400 in the power amplifier circuit 61 (see FIG. 7), the first circuit 400 in the power amplifier circuit 64 includes a termination circuit 411r instead of the termination circuit 411, and further includes a matching circuit 441.

[0136] 7, the termination circuit 411r is an LC series circuit, but the order of connection of the capacitors and inductors is different. That is, the inductor 411b in the termination circuit 411r has a first end connected to the collector of the amplifier 501 in the second member 210 through the inter-member connecting conductor 351i, and a second end. The capacitor 411a has a first end connected to the second end of the inductor 411b, and a second end grounded.

[0137] Matching circuit 441 is, for example, an LC series circuit similar to matching circuit 601 shown in FIG. 7, and includes a capacitor 441a and an inductor 441b.

[0138] The inductor 441b has a first end connected to the collector of the amplifier 501 in the second member 210 through the inter-member connecting conductor 351j, and a second end. The capacitor 441a has a first end connected to the second end of the inductor 441b, and a second end connected to the output terminal 32 of the module substrate 310 through the first conductor protrusion 116.

[0139] Note that a part of the matching circuit 441 may be provided outside the first member 110. Specifically, for example, an inductor such as a rewiring 351f (see FIG. 19) may be provided as the inter-member connecting conductor 351j, so that a part of the inductor is provided outside the first member 110. Also, for example, without providing the inductor 441b, the entire inductor may be provided outside the first member 110 by connecting a first end of the capacitor 441a to the inter-member connecting conductor 351j serving as an inductor such as the rewiring 351f.

[0140] Fig. 28 is a diagram for explaining a matching circuit 441c which is a modified example of matching circuit 441 in power amplifier circuit 64. As shown in Fig. 28, matching circuit 441c further includes an inductor 441d and has a different connection form in the rear stage of inductor 441b, compared to matching circuit 441 shown in Fig. 27.

[0141] Specifically, the capacitor 441a has a first end connected to the second end of the inductor 441b and a second end grounded. The inductor 441d has a first end connected to the second end of the inductor 441b and a second end connected to the output terminal 32 of the module substrate 310 through the first conductor protrusion 116.

[0142] [Fifth embodiment] A power amplifier device and a power amplifier circuit according to a fifth embodiment will be described. Fig. 29 is a diagram for explaining the arrangement of the power amplifier circuit 65 in the power amplifier device 15. Fig. 29 typically shows the arrangement of the power amplifier circuit 65 in a cross section of the power amplifier device 15. As shown in Fig. 29, the power amplifier circuit 65 according to the fifth embodiment differs from the power amplifier circuit 64 according to the fourth embodiment in that the capacitance of the capacitor in the matching circuit is changeable.

[0143] Compared to the first circuit 400 in the power amplifier circuit 64 (see FIG. 27), the first circuit 400 in the power amplifier circuit 65 includes a matching circuit 442 instead of the matching circuit 441, and further includes a switch control circuit 402. The matching circuit 442 includes capacitors 442a, 442b, 442c, and 442d, inductors 442e and 442f, and a switch 442g.

[0144] The matching circuit 442 adjusts the first impedance. The switch 442g switches the first impedance. In detail, the inductor 442e has a first end connected to the collector of the amplifier 501 in the second member 210 through the inter-member connecting conductor 351j, and a second end. The capacitor 442a has a first end connected to the second end of the inductor 442e, and a second end grounded. The inductor 442f has a first end connected to the second end of the inductor 442e, and a second end grounded. The capacitor 442b has a first end connected to the second end of the inductor 442f, and a second end. The switch 442g has a first end connected to the second end of the capacitor 442b, and a second end grounded. The capacitor 442c has a first end connected to the second end of the inductor 442f, and a second end grounded. The capacitor 442d has a first end connected to the second end of the inductor 442f and a second end connected to the output terminal 32 of the module substrate 310 through the first conductor protrusion 116.

[0145] The switch 442g is a switch similar to the switch 431, and operates based on a signal B9 received from the switch control circuit 402. In this embodiment, the switch control circuit 402 turns on the switch 442g when, for example, the frequency band to which the output signal RFout belongs is low. On the other hand, the switch control circuit 402 turns off the switch 442g when, for example, the frequency band to which the output signal RFout belongs is high.

[0146] The switch control circuit 402 may perform control to turn the switch 442g off when the frequency band to which the output signal RFout belongs is low, and to turn the switch 442g on when the frequency band to which the output signal RFout belongs is high.

[0147] Furthermore, matching circuit 442 may have a configuration in which an inductor is provided instead of a capacitor, and a capacitor is provided instead of an inductor.

[0148] [Sixth embodiment] A power amplifier device and a power amplifier circuit according to a sixth embodiment will be described. Fig. 30 is a diagram for explaining the arrangement of the power amplifier circuit 66 in the power amplifier device 16. Fig. 30 typically shows the arrangement of the power amplifier circuit 66 in a cross section of the power amplifier device 16. As shown in Fig. 30, the power amplifier circuit 66 according to the sixth embodiment differs from the power amplifier circuit 64 according to the fourth embodiment in that a termination circuit and a matching circuit are connected to the amplifier in the second member 210 through the same inter-member connecting conductor.

[0149] In this embodiment, the first member 110 is provided with a node N3 connected to the collector of the amplifier 501 in the second member 210 through the inter-member connecting conductor 351i. A first end of the inductor 411b in the termination circuit 411r is connected to the node N3. A first end of the inductor 441b in the matching circuit 441 is connected to the node N3.

[0150] For example, by providing an inductor (second inductor) such as rewiring 351e (see FIG. 19) as inter-component connecting conductor 351i, part of the inductor of termination circuit 411r can be shared with part of the inductor of matching circuit 441, thereby reducing the installation space for the inductor in first component 110 and making the size of power amplifier device 16 compact.

[0151] Alternatively, the first end of the capacitor 411a and the first end of the capacitor 441a may be connected to the inter-member connecting conductor 351i serving as an inductor such as the rewiring 351e without providing the inductor 411b and the inductor 441b. With this configuration, all of the inductors of the termination circuit 411r and all of the inductors of the matching circuit 441 can be shared, so that the installation space for the inductors in the first member 110 can be further reduced, and the size of the power amplifier device 16 can be further made compact.

[0152] Fig. 31 is a diagram for explaining a matching circuit 441c which is a modified example of the matching circuit 441 in the power amplifier circuit 66. As shown in Fig. 31, the matching circuit 441c has a configuration similar to that of the matching circuit 441c shown in Fig. 28. In this modification, a first end of an inductor 441b in the matching circuit 441c is connected to a node N3.

[0153] [Seventh embodiment] A power amplifier device and a power amplifier circuit according to a seventh embodiment will be described. Fig. 32 is a diagram for explaining the arrangement of the power amplifier circuit 67 in the power amplifier device 17. Fig. 32 shows a schematic arrangement of the power amplifier circuit 67 in a cross section of the power amplifier device 17. As shown in Fig. 32, the power amplifier circuit 67 according to the seventh embodiment differs from the power amplifier circuit 61 according to the first embodiment in that an input signal is amplified by a differential amplifier circuit.

[0154] Compared to the power amplifier circuit 61 (see FIG. 7), the power amplifier circuit 67 further includes a balun 602. Compared to the first circuit 400 in the power amplifier circuit 61 (see FIG. 7), the first circuit 400 in the power amplifier circuit 67 includes a termination circuit 411r instead of the termination circuit 411, and further includes a termination circuit 413 (second termination circuit). Compared to the second circuit 500 in the power amplifier circuit 61 (see FIG. 7), the second circuit 500 in the power amplifier circuit 67 further includes an amplifier 501c (second amplifier).

[0155] In this embodiment, the balun 602 is provided on the module substrate 310. In Fig. 32, the bias circuit 502 and the input terminal 31 are omitted. The amplifier control circuit 401 further controls the operation of the amplifier 501c. As a result, a bias is supplied to the base of the amplifier 501c in the same manner as the base of the amplifier 501.

[0156] For example, input signals RFin1 (first signal) and RFin2 (second signal) constituting balanced signals are respectively supplied to the base of amplifier 501 and the base of amplifier 501c. The input signals RFin1 and RFin2 are generated, for example, by splitting the input signal RFin, which is an unbalanced signal, into two signals whose phases differ by approximately 180° from each other by a balun.

[0157] The amplifier 501 amplifies the input signal RFin1 and outputs an amplified signal ARF1 (first amplified signal). The amplifier 501c has a base to which an input signal RFin2 is supplied, a collector connected to a power supply voltage supply node (not shown), the termination circuit 413 and the balun 602, and an emitter grounded via the second conductor protrusion 216. The amplifier 501c amplifies the input signal RFin2 and outputs an amplified signal ARF2 (second amplified signal).

[0158] Termination circuit 413 is an LC series circuit having a configuration similar to that of termination circuit 411r, and includes a capacitor 413a and an inductor 413b. Inductor 413b has a first end connected to the collector of amplifier 501c in second member 210 through inter-member connecting conductor 351m, and a second end. Capacitor 413a has a first end connected to the second end of inductor 413b, and a second end grounded. Inter-member connecting conductor 351m has a configuration similar to that of inter-member connecting conductor 351i, for example.

[0159] The balun 602 converts the amplified signal ARF1 from the amplifier 501 and the amplified signal ARF2 from the amplifier 501c into an output signal RFout (third amplified signal) which is an unbalanced signal. Specifically, the balun 602 combines the amplified signals ARF1 and ARF2 to generate the output signal RFout. The balun 602 outputs the output signal RFout to the output terminal 32 through the matching circuit 601.

[0160] In this embodiment, the balun 602 has an inductor 602a (primary winding) and an inductor 602b (secondary winding). The inductor 602a has a first end connected to the collector of the amplifier 501 through the second conductor protrusion 216 and a second end connected to the collector of the amplifier 501c through the second conductor protrusion 216. The inductor 602b is electromagnetically coupled to the inductor 602a and has a first end grounded and a second end connected to the matching circuit 601.

[0161] The matching circuit 601 adjusts a third impedance for the fundamental wave of the output signal RFout when the circuit following the balun 602 is seen from the balun 602 .

[0162] In this manner, by providing the large-sized balun 602 on the module substrate 310, the degree of freedom in the layout of the first member 110 and the second member 210 can be increased.

[0163] Furthermore, by providing the termination circuit 411r and the termination circuit 413 in the first member 110, which is away from the module substrate 310 to which the output signal RFout is transmitted, isolation can be ensured, thereby suppressing the intrusion of harmonic components into the output signal RFout.

[0164] [Eighth embodiment] A power amplifier device and a power amplifier circuit according to the eighth embodiment will be described. Fig. 33 is a diagram for explaining the arrangement of the power amplifier circuit 68 in the power amplifier device 18. Fig. 33 illustrates a schematic arrangement of the power amplifier circuit 68 in a cross section of the power amplifier device 18. As shown in Fig. 33, the power amplifier device 18 according to the eighth embodiment differs from the power amplifier device 17 according to the seventh embodiment in that a matching circuit is provided in the first member 110.

[0165] Compared to the power amplifier circuit 67 (see FIG. 32), the power amplifier circuit 68 includes a matching circuit 443 included in the first circuit 400 instead of the matching circuit 601. The matching circuit 443 includes capacitors 443aa, 443ab, and 443ac. The capacitor 443aa has a first end connected to the second end of the inductor 602b of the balun 602 on the module substrate 310 through the first conductor protrusion 116, and a second end grounded.

[0166] The capacitor 443ab has a first end connected to the first end of the capacitor 443aa and a second end grounded. The capacitor 443ac has a first end connected to the first end of the capacitor 443aa and a second end connected to the output terminal 32 of the module substrate 310 through the first conductor protrusion 116.

[0167] [Ninth embodiment] A power amplifier device and a power amplifier circuit according to a ninth embodiment will be described. Fig. 34 is a diagram for explaining the arrangement of the power amplifier circuit 69 in the power amplifier device 19. Fig. 34 shows a schematic arrangement of the power amplifier circuit 69 in a cross section of the power amplifier device 19. As shown in Fig. 34, the power amplifier circuit 69 according to the ninth embodiment differs from the power amplifier circuit 68 according to the eighth embodiment in that the capacitance of the capacitor in the matching circuit is changeable.

[0168] Compared to the first circuit 400 (see FIG. 33) in the power amplifier circuit 68, the first circuit 400 includes a matching circuit 443a (first matching circuit) instead of the matching circuit 443, and further includes a switch control circuit 402. Compared to the matching circuit 443 (see FIG. 33), the matching circuit 443a further includes switches 443ba and 443bb. The matching circuit 443a adjusts the third impedance like the matching circuit 443. The switches 443ba and 443bb switch the third impedance.

[0169] Specifically, the switch 443ba is connected to the second end of the inductor 602b of the balun 602 on the module substrate 310 through the first conductor protrusion 116, and has a first end connected to the first end of the capacitor 443ac and a second end connected to the first end of the capacitor 443aa. The switch 443bb has a first end connected to the first end of the switch 443ba and a second end connected to the first end of the capacitor 443ab.

[0170] The switches 443ba and 443bb are similar to the switch 431 and operate based on signals B10 and B11, respectively, received from the switch control circuit 402. In this embodiment, the switch control circuit 402 controls the switches 443ba and 443bb so that the combined capacitance of the capacitors 443aa and 443ab becomes large when the frequency band to which the output signal RFout belongs is low. Specifically, the switch control circuit 402 turns on both the switches 443ba and 443bb.

[0171] On the other hand, the switch control circuit 402 controls the switches 443ba and 443bb so that the combined capacitance of the capacitors 443aa and 443ab becomes smaller when the frequency band to which the output signal RFout belongs is high. Specifically, the switch control circuit 402 turns on one of the switches 443ba and 443bb.

[0172] In addition, the switch control circuit 402 may be configured to control the switches 443ba and 443bb so that the combined capacitance of the capacitors 443aa and 443ab becomes small when the frequency band to which the output signal RFout belongs is low, and the combined capacitance becomes large when the frequency band to which the output signal RFout belongs is high.

[0173] Furthermore, although the matching circuit 443a has been described as including two pairs of the capacitor 443aa and the switch 443ba, the matching circuit 443a may include three or more pairs.

[0174] [Tenth embodiment] A power amplifier device and a power amplifier circuit according to a tenth embodiment will be described. Fig. 35 is a diagram for explaining the arrangement of the power amplifier circuit 70 in the power amplifier device 20. Fig. 35 typically shows the arrangement of the power amplifier circuit 70 in a cross section of the power amplifier device 20. As shown in Fig. 35, the power amplifier circuit 70 according to the tenth embodiment differs from the power amplifier circuit 61 according to the first embodiment in that power is supplied to the amplifier 501 by an APT (Average Power Tracking) method or an ET (Envelope Tracking) method.

[0175] Compared to the power amplifier device 11 (see FIG. 7), the power amplifier device 20 further includes a power supply 751. Compared to the first circuit 400 in the power amplifier circuit 70 (see FIG. 7), the first circuit 400 in the power amplifier circuit 61 includes a termination circuit 411r instead of the termination circuit 411.

[0176] The power supply 751 applies a power supply voltage to the collector of the amplifier 501 according to, for example, the average power tracking (APT) method or the envelope tracking (ET) method.

[0177] In detail, a node N4 is provided on module substrate 310, which is connected to the collector of amplifier 501 via second conductor protrusion 216. An input side terminal of matching circuit 601, i.e., a first end of capacitor 601a (see FIG. 6), is connected to node N4. Power source 751 is provided, for example, outside module substrate 310, and is connected to node N4 in module substrate 310 via power supply terminal 33.

[0178] With this configuration, the power consumption of amplifier 501 can be reduced, allowing amplifier 501 to operate efficiently.

[0179] [Eleventh embodiment] A power amplifier device and a power amplifier circuit according to an eleventh embodiment will be described. Fig. 36 is a diagram for explaining the arrangement of the power amplifier circuit 71 in the power amplifier device 21. Fig. 37 is a diagram showing in detail the 90-degree phase shift circuit 444 and the output matching circuit 445 shown in Fig. 36. Figs. 36 and 37 typically show the arrangement of the power amplifier circuit 71 in a cross section of the power amplifier device 21. As shown in Figs. 36 and 37, the power amplifier circuit 71 according to the eleventh embodiment differs from the power amplifier circuit 61 according to the first embodiment in that amplification is performed by a Doherty amplifier.

[0180] Compared to the first circuit 400 (see FIG. 7) in the power amplifier circuit 61, the first circuit 400 in the power amplifier circuit 71 includes a termination circuit 411r instead of the termination circuit 411, and further includes a switch control circuit 402, a termination circuit 413 (second termination circuit), a 90-degree phase shift circuit 444, and an output matching circuit 445 (first matching circuit). Compared to the second circuit 500 (see FIG. 7) in the power amplifier circuit 71, the second circuit 500 in the power amplifier circuit 61 further includes an amplifier 501c (second amplifier).

[0181] 36, the bias circuit 502 and the input terminal 31 are omitted. In this embodiment, a distributor (not shown) is provided in front of the amplifier 501 and the amplifier 501c. The distributor distributes the input signal RFin into an input signal RFin3 (first signal) and an input signal RFin4 (second signal) whose phase is delayed by approximately 90 degrees with respect to the input signal RFin3.

[0182] The amplifier 501 is, for example, a peak amplifier, and is biased to class C. When the power level of the input signal RFin4 indicates a predetermined power level or higher, the amplifier 501 amplifies the input signal RFin4 and outputs an amplified signal ARF4 (a second amplified signal).

[0183] The amplifier control circuit 401 further controls the operation of the amplifier 501c. As a result, a bias is supplied to the base of the amplifier 501c in the same manner as the base of the amplifier 501. In this embodiment, the amplifier 501c is, for example, a carrier amplifier, and is biased to class A, class AB, or class B. That is, the amplifier 501 amplifies the input signal RFin3 and outputs an amplified signal ARF3 (first amplified signal) regardless of the power level of the input signal RFin3, such as a small instantaneous input power.

[0184] The 90-degree phase shift circuit 444 shifts the phase of the amplified signal ARF3. Specifically, the 90-degree phase shift circuit 444 delays the phase of the amplified signal ARF3 by approximately 90 degrees. This allows the phase of the amplified signal ARF3 and the phase of the amplified signal ARF4 to be aligned in the stage following the 90-degree phase shift circuit 444.

[0185] The output matching circuit 445 generates an output signal RFout (third amplified signal) by combining an amplified signal ARF4 supplied from the amplifier 501 through a node N5 and an input signal RFin3 supplied from the amplifier 501c through the 90 degree phase shift circuit 444 and node N5. The output matching circuit 445 also adjusts a fourth impedance for the fundamental wave of the output signal RFout when the amplifiers 501 and 501c are viewed from the amplifiers 501 and 501c. The output matching circuit 445 outputs the output signal RFout to the output terminal 32 through the first conductor protrusion 116.

[0186] In detail, the 90 degree phase shift circuit 444 includes capacitors 444aa, 444ab, 444ac, and 444ad, an inductor 444b, and switches 444ca and 444cb (see FIG. 37).

[0187] The capacitor 444aa in the 90-degree phase shift circuit 444 has a first end connected to the collector of the amplifier 501c in the second member 210 through the inter-member connecting conductor 351m, and a second end grounded through the first conductor protrusion 116. The capacitor 444ab has a first end connected to the first end of the capacitor 444aa, and a second end. The switch 444ca has a first end connected to the second end of the capacitor 444ab, and a second end connected to the second end of the capacitor 444aa.

[0188] The inductor 444b has a first end connected to the first end of the capacitor 444aa and a second end connected to a node N5.

[0189] The capacitor 444ac has a first end connected to the node N5 and a second end grounded through the first conductor protrusion 116. The capacitor 444ad has a first end connected to the node N5 and a second end. The switch 444cb has a first end connected to the second end of the capacitor 444ad and a second end connected to the second end of the capacitor 444ac.

[0190] The switches 444ca and 444cb are similar to the switch 431 and operate based on signals B12 and B13, respectively, received from the switch control circuit 402. In this embodiment, the switch control circuit 402 turns on the switches 444ca and 444cb when, for example, the frequency band to which the amplified signal ARF3 belongs is low. On the other hand, the switch control circuit 402 turns off the switches 444ca and 444cb when, for example, the frequency band to which the amplified signal ARF3 belongs is high.

[0191] The switch control circuit 402 may be configured to turn off the switches 444ca and 444cb when the frequency band to which the amplified signal ARF3 belongs is low, and to turn on the switches 444ca and 444cb when the frequency band to which the amplified signal ARF3 belongs is high.

[0192] The output matching circuit 445 includes capacitors 445aa, 445ab, 445ac, 445ad, 445ae, 445af, and 445ag, inductors 445ba and 445bb, and switches 445ca, 445cb, and 445cc (see FIG. 37).

[0193] The capacitor 445aa in the output matching circuit 445 has a first end connected to the node N5 and a second end grounded through the first conductor protrusion 116. The capacitor 445ab has a first end connected to the first end of the capacitor 445aa, and a second end. The switch 445ca has a first end connected to the second end of the capacitor 445ab, and a second end connected to the second end of the capacitor 445aa.

[0194] The inductor 445ba has a first end connected to the node N5, and a second end. The capacitor 445ac has a first end connected to the second end of the inductor 445ba and a second end grounded through the first conductor protrusion 116. The capacitor 445ad has a first end connected to the first end of the capacitor 445ac and a second end. The switch 445cb has a first end connected to the second end of the capacitor 445ad and a second end connected to the second end of the capacitor 445ac.

[0195] The inductor 445bb has a first end connected to the second end of the inductor 445ba, and a second end. The capacitor 445ae has a first end connected to the second end of the inductor 445bb, and a second end grounded through the first conductor protrusion 116. The capacitor 445af has a first end connected to the first end of the capacitor 445ae, and a second end. The switch 445cc has a first end connected to the second end of the capacitor 445af, and a second end connected to the second end of the capacitor 445ae.

[0196] The capacitor 445ag has a first end connected to the second end of the inductor 445bb, and a second end connected to the output terminal 32 of the module substrate 310 through the first conductor protrusion 116.

[0197] The switches 445ca, 445cb, and 445cc are similar to the switch 431 and operate based on signals B14, B15, and B17 received from the switch control circuit 402, respectively. In this embodiment, the switch control circuit 402 turns on the switches 445ca, 445cb, and 445cc when, for example, the frequency band to which the output signal RFout belongs is low. On the other hand, the switch control circuit 402 turns off the switches 445ca, 445cb, and 445cc when, for example, the frequency band to which the output signal RFout belongs is high.

[0198] The switch control circuit 402 may be configured to turn off the switches 445ca, 445cb, and 445cc when the frequency band to which the output signal RFout belongs is low, and to turn on the switches 445ca, 445cb, and 445cc when the frequency band to which the output signal RFout belongs is high.

[0199] [Twelfth embodiment] A power amplifier device and a power amplifier circuit according to a twelfth embodiment will be described. Fig. 38 is a diagram for explaining the arrangement of the power amplifier circuit 72 in the power amplifier device 22. Fig. 38 typically shows the arrangement of the power amplifier circuit 72 in a cross section of the power amplifier device 22. As shown in Fig. 38, the power amplifier circuit 72 according to the twelfth embodiment differs from the power amplifier circuit 65 according to the fifth embodiment in that a termination circuit 411r and a matching circuit 442 are grounded outside the first member 110.

[0200] In the second circuit 500 in the second member 210 , a node N 6 is provided between the emitter of the amplifier 501 and the second conductor protrusion 216 .

[0201] In the first circuit 400 in the first member 110, a second end of the capacitor 442a constituting the matching circuit 442 is grounded on the module substrate 310 through the first conductor protrusion 116. In addition, a second end of the capacitor 442c is grounded on the module substrate 310 through the first conductor protrusion 116.

[0202] A second end of the capacitor 411a constituting the termination circuit 411r is connected to the node N6 through the inter-component connecting conductor 351n. That is, the termination circuit 411r is grounded in the module substrate 310 through the inter-component connecting conductor 351n, the node N6, and the second conductor protrusion 216. The inter-component connecting conductor 351n has, for example, a similar configuration to the inter-component connecting conductor 351i.

[0203] For example, it is possible to arrange the termination circuit 411r and the matching circuit 442 to be grounded to a common ground provided in the first member 110. However, such an arrangement is not preferable because it increases the possibility that harmonics transmitted by the termination circuit 411r will be mixed into the matching circuit 442 through the common ground.

[0204] In contrast, the length of the path through the ground between the termination circuit 411r and the matching circuit 441 can be increased by a configuration in which the termination circuit 411r is grounded on the module substrate 310 through the inter-component connecting conductor 351n, the second component 210, and the second conductor protrusion 216, as in the power amplifier circuit 72. This makes it possible to prevent harmonics from being mixed into the matching circuit 442 through the ground from the termination circuit 411r, so that a high-quality output signal RFout with a low harmonic noise level can be supplied to a downstream circuit.

[0205] Although the configuration in which the amplifier 501 and the termination circuit 411r are grounded on the module substrate 310 through the common second conductor protrusion 216 has been described, the present invention is not limited to this. The amplifier 501 and the termination circuit 411r may be grounded on the module substrate 310 through separate second conductor protrusions 216.

[0206] Fig. 39 is a diagram for explaining a modified example of the layout of the power amplifier circuit 68 in the power amplifier device 18. Fig. 40 is a diagram for explaining a modified example of the layout of the power amplifier circuit 71 in the power amplifier device 21. As shown in Figs. 39 and 40, the method of grounding the termination circuit 411r in the power amplifier device 22 (see Fig. 38) is similarly applicable to the termination circuits 411r and 413 in the power amplifier device 18 (see Fig. 33) and the power amplifier device 21 (see Fig. 36).

[0207] In this case, in the second circuit 500 in the second member 210, a node N7 is provided between the emitter of the amplifier 501c and the second conductor protrusion 216.

[0208] A second end of the capacitor 413a constituting the termination circuit 413 is connected to the node N7 through the inter-component connection conductor 351p. That is, the termination circuit 413 is grounded in the module substrate 310 through the inter-component connection conductor 351p, the node N7, and the second conductor protrusion 216. The inter-component connection conductor 351p has, for example, a similar configuration to the inter-component connection conductor 351i.

[0209] Although the configuration in which the amplifier 501c and the termination circuit 413 are grounded on the module substrate 310 through the common second conductor protrusion 216 has been described, the present invention is not limited to this. The amplifier 501c and the termination circuit 413 may be grounded on the module substrate 310 through separate second conductor protrusions 216.

[0210] In the power amplifier devices 11 to 22, the first circuit 400 in the first member 110 and the second circuit 500 in the second member 210 are electrically connected by a conductor, for example, an inter-member connection conductor, formed on either the first member 110 or the second member 210, but the present invention is not limited to this. The first circuit 400 and the second circuit 500 may be electrically connected by a bump or wire bonding.

[0211] In addition, the layout of the power amplifier circuits 63 to 72 in the power amplifier devices 13 to 22 can be realized by appropriately combining each part of the layout of the power amplifier circuit 61 in the power amplifier device 11 and each part of the layout of the power amplifier circuit 62 in the power amplifier device 12.

[0212] Further, although the power amplifiers 11 to 22 are configured to include the module substrate 310 in the above embodiment, the present invention is not limited to this.

[0213] An exemplary embodiment of the present invention has been described above. The power amplifier devices 11 to 22 each include a first member 110 in which a first circuit 400 is formed, a second member 210 in which a second circuit 500 is formed, and an inter-member connection conductor that electrically connects the first circuit 400 and the second circuit 500. The second member 210 is mounted on the first member 110. The second circuit 500 includes an amplifier 501 that amplifies an RF signal and outputs an output signal RFout. The first circuit 400 includes an amplifier control circuit 401 that controls the operation of the second circuit 500. At least a part of a termination circuit 411 that is connected to the amplifier 501 through the inter-member connection conductor and attenuates harmonic components of the output signal RFout is formed in the first member 110.

[0214] For example, when the termination circuit 411 is provided in the second member 210, the termination circuit 411 and the transmission path of the output signal RFout are physically close to each other, and the possibility of the harmonic components being mixed into the transmission path increases. In contrast, by forming at least a part of the termination circuit 411 in the first member 110 separate from the second member 210 in which the amplifier 501 is provided, the termination circuit 411 can be separated from the transmission path of the output signal RFout. This can suppress the mixing of harmonic components into the transmission path of the output signal RFout, thereby suppressing the radiation of harmonic components from the transmission path and supplying the output signal RFout with the mixing of harmonic components suppressed to other devices such as a downstream circuit. Therefore, it is possible to suppress the mixing of harmonics contained in the amplified signal amplified by the amplifier into other devices.

[0215] In the power amplifier 11, the termination circuit 411 includes an inductor 411b formed in the first member 110.

[0216] In this manner, by forming the large-sized inductor 411b in the first component 110, most of the termination circuit 411 can be formed in the first component 110, so that most of the termination circuit 411 can be located away from the transmission path of the output signal RFout.

[0217] Furthermore, in the power amplifier 13, the termination circuit 701 includes a second inductor formed by an inter-member connecting conductor 351i such as the rewiring 351e.

[0218] With this configuration, the second inductor can be easily located away from the transmission path of the output signal RFout. In addition, since the inter-component connecting conductor 351i can have the function of an inductor, the space of the inter-component connecting conductor 351i can be effectively utilized, and the degree of freedom in layout can be improved.

[0219] Furthermore, in the power amplifying device 12, the termination circuit 701 includes switches 431 and 432 that switch the frequency of the harmonic components to be attenuated. Furthermore, in the power amplifying device 13, the termination circuit 412 includes switches 412ca and 412cb that switch the frequency of the harmonic components to be attenuated.

[0220] In general, the frequency band of harmonics that can be attenuated by a termination circuit is limited to a certain frequency range. With the above configuration, the frequency range of harmonics that can be effectively attenuated can be expanded by the switches 431 and 432 and the switches 412ca and 412cb, so that it is possible to provide the power amplifiers 12 and 13 that supply high-quality output signals RFout in which the inclusion of harmonic components is suppressed over a wide frequency band.

[0221] Moreover, in the power amplifier device 12, a part of a matching circuit 702 that adjusts a first impedance for a fundamental wave of the output signal RFout when the amplifier 501 is seen from the amplifier 501 to a circuit subsequent to the amplifier 501 is formed in the first component 110. The matching circuit 702 includes switches 433 and 434 that switch the first impedance. Moreover, in the power amplifier device 15, at least a part of a matching circuit 442 that adjusts the first impedance is formed in the first component 110. The matching circuit 442 includes a switch 442g that switches the first impedance.

[0222] In general, the frequency band in which a matching circuit can match the impedance between circuits is limited to a certain frequency range. With the above configuration, the frequency range in which the impedance between amplifier 501 and a circuit downstream of amplifier 501 can be effectively matched can be expanded by switches 433 and 434 and switch 442g, so that power amplifier device 15 can be operated efficiently over a wide frequency band.

[0223] In the power amplifier device 16, a part of the termination circuit 411r is formed in the first member 110. A part of a matching circuit 441 that adjusts a first impedance for a fundamental wave of the output signal RFout when a circuit downstream of the amplifier 501 is seen from the amplifier 501 is formed in the first member 110. The termination circuit 411r and the matching circuit 441 include a second inductor that is formed by an inter-member connecting conductor 351i such as the rewiring 351e and is connected to the amplifier 501.

[0224] With this configuration, part of the inductor of termination circuit 411r and part of the inductor of matching circuit 441 can be shared, so that the installation space for the inductor in first member 110 can be reduced and power amplifier device 16 can be made compact in size.

[0225] Moreover, in the power amplifier 17, the RF signal includes an input signal RFin1 and an input signal RFin2 that form a balanced signal. The amplifier 501 amplifies the input signal RFin1 and outputs an amplified signal ARF1. The second circuit 500 further includes an amplifier 501c that amplifies the input signal RFin2 and outputs an amplified signal ARF2. The amplifier control circuit 401 further controls the operation of the amplifier 501c. At least a part of a termination circuit 413 that is connected to the amplifier 501c through an inter-member connecting conductor 351m and attenuates harmonic components of the amplified signal ARF2 is formed in the first member 110.

[0226] In this way, even in the differential amplification configuration, the termination circuit 413 can be located away from the transmission path of the amplified signal ARF2 by forming at least a part of the termination circuit 413 in the first member 110 separate from the second member 210 in which the amplifier 501c is provided. This makes it possible to suppress the inclusion of harmonic components in the amplified signal ARF2.

[0227] The RF circuit module 300 also includes a power amplifier 17 and a module substrate 310 having a substrate-side electrode 312. The second member 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310, and is flip-chip bonded to the module substrate 310 by the second conductor protrusion 216. The module substrate 310 is provided with a balun 602 that converts amplified signals ARF1 and ARF2 supplied through the second conductor protrusion 216 into an output signal RFout, which is an unbalanced signal.

[0228] In this manner, by providing the large-sized balun 602 on the module substrate 310, there is no need to reserve space to place the balun in the second component 210 or the first component 110, and therefore the size of the second component 210 and the first component 110 can be reduced.

[0229] Moreover, in the power amplifier device 19, the first component 110 has a first conductor protrusion 116 connected to the substrate-side electrode 311 of the module substrate 310, and is flip-chip bonded to the module substrate 310 by the first conductor protrusion 116. The output signal RFout is supplied to the first component 110 from the balun 602 through the first conductor protrusion 116, and a matching circuit 443a is formed that adjusts a third impedance for the fundamental wave of the output signal RFout when viewed from the balun 602 to the circuit downstream of the balun 602. The matching circuit 443a includes switches 443ba and 443bb that switch the third impedance.

[0230] Generally, the frequency band in which a matching circuit can match the impedance between circuits is limited to a certain frequency range. With the above configuration, the frequency range in which the impedance between balun 602 and the circuit following balun 602 can be effectively matched can be expanded by switches 443ba and 443bb, so that power amplifier 19 can be operated efficiently over a wide frequency band.

[0231] In the power amplifying device 21, the RF signal includes the divided input signal RFin3 and the input signal RFin4 having a different phase from the input signal RFin3. The amplifier 501 amplifies the input signal RFin4 and outputs the amplified signal ARF4 when the power level of the input signal RFin4 indicates a predetermined power level or more. The second circuit 500 further includes an amplifier 501c that amplifies the input signal RFin3 and outputs the amplified signal ARF3. The amplifier control circuit 401 further controls the operation of the amplifier 501c. At least a part of the termination circuit 413 that is connected to the amplifier 501c through the inter-member connecting conductor 351m and attenuates the harmonic components of the amplified signal ARF3 is formed in the first member 110.

[0232] In this manner, even in the Doherty amplifier configuration, the termination circuit 413 can be located away from the transmission path of the amplified signal ARF3 by forming at least a part of the termination circuit 413 in the first member 110 separate from the second member 210 in which the amplifier 501c is provided. This makes it possible to suppress the intrusion of harmonic components into the amplified signal ARF3.

[0233] Furthermore, in the power amplifying device 21, the first circuit 400 includes a 90-degree phase shift circuit 444 that shifts the phase of the amplified signal ARF3. The 90-degree phase shift circuit 444 includes switches 444ca and 444cb that switch the amount of phase shift.

[0234] In general, the frequency range in which a phase shift circuit can shift the phase of a signal by 90 degrees is narrow. In other words, it is difficult to shift the phase of a signal by 90 degrees in a wide frequency band. With the above configuration, the switches 444ca and 444cb can switch the amount of phase shift of the amplified signal ARF3, so that the amount of shift can be switched according to the frequency of the amplified signal ARF3, and the phase of the amplified signal ARF3 can be shifted by, for example, 90 degrees in a wide frequency band.

[0235] In the power amplifier 21, an output matching circuit 445 is formed in the first member 110. The output matching circuit 445 generates an output signal RFout by combining the amplified signals ARF3 and ARF4, and adjusts a fourth impedance for the fundamental wave of the output signal RFout when the amplifiers 501 and 501c are viewed from the amplifiers 501 and 501c to the circuits subsequent to the amplifiers 501 and 501c. The output matching circuit 445 includes switches 445ca, 445cb, and 445cc that switch the fourth impedance.

[0236] In general, the frequency band in which a matching circuit can match the impedance between circuits is limited to a certain frequency range. With the above configuration, even in the Doherty amplifier configuration, the frequency range in which the impedance between the amplifiers 501 and 501c and the circuits subsequent to the amplifiers 501 and 501c can be effectively matched can be expanded by the switches 445ca, 445cb, and 445cc, so that the power amplifier device 21 can be operated efficiently over a wide frequency band.

[0237] The RF circuit module 300 also includes a power amplifier 22, and a module substrate 310 having a substrate-side electrode 312. The second member 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310. The amplifier 501 is grounded via the second conductor protrusion 216. The termination circuit 411r is grounded via the second member 210 and the second conductor protrusion 216.

[0238] For example, when the matching circuit is provided in the first member 110, it is possible to arrange the termination circuit 411r and the matching circuit to be grounded to a common ground provided in the first member 110. However, such an arrangement is not preferable because it increases the possibility that harmonics transmitted by the termination circuit 411r will be mixed into the matching circuit through the common ground. As described above, by the configuration in which the termination circuit 411r is grounded in the module substrate 310 through the second member 210 and the second conductor protrusion 216, the length of the path through the ground between the termination circuit 411r and the matching circuit can be increased. This makes it possible to suppress the mixing of harmonics from the termination circuit 411r into the matching circuit through the ground, so that a high-quality output signal RFout with a low harmonic noise level can be supplied to the downstream circuit. In addition, for example, the second conductor protrusion 216 can be shared between the ground path of the amplifier 501 and the ground path of the termination circuit 411r, so that the number of the second conductor protrusions 216 can be reduced.

[0239] The RF circuit module 300 also includes a power amplifier 18 and / or 21, and a module substrate 310 having a substrate-side electrode 312. The second member 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310. The amplifier 501c is grounded via the second conductor protrusion 216. The termination circuit 413 is grounded via the second member 210 and the second conductor protrusion 216.

[0240] For example, when the matching circuit is provided in the first member 110, it is possible to arrange the termination circuit 413 and the matching circuit to be grounded to a common ground provided in the first member 110. However, such an arrangement is not preferable because it increases the possibility that harmonics transmitted by the termination circuit 413 will be mixed into the matching circuit through the common ground. As described above, by the configuration in which the termination circuit 413 is grounded in the module substrate 310 through the second member 210 and the second conductor protrusion 216, the length of the path through the ground between the termination circuit 413 and the matching circuit can be increased. This makes it possible to suppress the mixing of harmonics from the termination circuit 413 into the matching circuit through the ground, so that a high-quality output signal RFout with a low harmonic noise level can be supplied to the downstream circuit. In addition, for example, the second conductor protrusion 216 can be shared between the ground path of the amplifier 501c and the ground path of the termination circuit 413, so that the number of the second conductor protrusions 216 can be reduced.

[0241] Moreover, the RF circuit module 300 includes one of the power amplifier devices 11 to 22, and a module substrate 310 having substrate-side electrodes 311 and 312. The first member 110 has a first conductor protrusion 116 connected to the substrate-side electrode 311 of the module substrate 310, and is flip-chip bonded to the module substrate 310 by the first conductor protrusion 116. The inter-component connection conductor is a conductor formed on either the first member 110 or the second member 210, and electrically connects the first circuit 400 and the second circuit 500 without passing through the module substrate 310. The second member 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310.

[0242] In this manner, the configuration in which the first member 110 is flip-chip bonded to the module substrate 310 eliminates the need for space for arranging pads and wires for wire bonding, and therefore the overall size of the power amplifiers 11 to 22 can be reduced. In addition, the configuration in which the first member 110 has the first conductor protrusion 116 connected to the substrate-side electrode 311 of the module substrate 310, and the second member 210 has the second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310, allows each of the first circuit 400 and the second circuit 500 to be electrically connected to the module substrate 310. In addition, the configuration in which the first circuit 400 and the second circuit 500 are electrically connected to each other by the inter-member connection conductor without passing through the module substrate 310 makes it unnecessary to form wiring for connecting the first circuit 400 and the second circuit 500 on the module substrate 310. This allows the overall size of the power amplifiers 11 to 22 to be reduced. Furthermore, heat generated by amplifier 501 and the like included in second circuit 500 formed in second member 210 can be conducted through two paths, that is, the heat dissipation path to first member 110 and the heat dissipation path to module substrate 310, and therefore heat can be dissipated and removed with high efficiency. This makes it possible to realize power amplifier devices 11-22 that are miniaturized without being restricted by heat dissipation properties, or power amplifier devices 11-22 that are compact but have high heat dissipation properties.

[0243] Moreover, the RF circuit module 300 includes any one of the power amplifier devices 11 to 22, and a module substrate 310 having 312. The second member 210 has one or more second conductor protrusions 216 connected to the substrate-side electrode 312 of the module substrate 310. A second conductor protrusion 216a of the one or more second conductor protrusions 216 is provided so as to overlap with the amplifier 501 when the second member 210 is viewed in plan from the z-axis negative side.

[0244] With this configuration, heat generated in amplifier 501 can be efficiently conducted to module substrate 310 via second conductor protrusion 216a and dissipated by module substrate 310, thereby effectively suppressing temperature rise in amplifier 501.

[0245] In the power amplifiers 11 to 22, the first member 110 is provided with a heat spreader 131 at a position overlapping with the amplifier 501 when the second member 210 is viewed in plan from the negative z-axis side.

[0246] With this configuration, heat generated in amplifier 501 can be efficiently conducted to heat spreader 131 and efficiently dissipated in heat spreader 131, so that a rise in temperature of amplifier 501 can be effectively suppressed.

[0247] Moreover, in the power amplifying device 12, the termination circuit 701 includes an inductor 651 having a first end connected to the amplifier 501, an intermediate tap 651a, and a second end grounded. The termination circuit 701 also includes a switch 431 having a first end connected to the intermediate tap 651a and a second end grounded, and switching between conduction and non-conduction between the first end and the second end.

[0248] With this configuration, the effective length of inductor 651 can be switched with a simple configuration using switch 431 connected to center tap 651a, so that switching of the inductance in termination circuit 701 can be easily realized.

[0249] Moreover, in the power amplifier device 12, the matching circuit 702 includes an inductor 652 having a first end connected to the amplifier 501, an intermediate tap 652a, and a second end connected to the output terminal 32. The matching circuit 702 also includes a switch 433 having a first end connected to the intermediate tap 652a and a second end connected to the output terminal 32, and switching between conduction and non-conduction between the first end and the second end.

[0250] With this configuration, the effective length of inductor 652 can be switched with a simple configuration using switch 433 connected to center tap 652a, so that switching of the inductance in matching circuit 702 can be easily realized.

[0251] Moreover, in the power amplifier device 12, at least a part of a matching circuit 703 that adjusts a second impedance for the fundamental wave of the input signal RFin when the amplifier 501 is viewed from the input terminal 31 is formed in the first member 110. The matching circuit 703 includes an inductor 653 having a first end connected to the input terminal 31, an intermediate tap 653a, and a second end connected to the amplifier 501. The matching circuit 703 also includes a switch 435 that has a first end connected to the input terminal 31 and a second end connected to the intermediate tap 653a and switches between conduction and non-conduction between the first end and the second end.

[0252] With this configuration, the effective length of inductor 653 can be switched with a simple configuration using switch 435 connected to center tap 653a, so that switching of the inductance in matching circuit 703 can be easily realized.

[0253] In the power amplifiers 11 to 22, the first member 110 is a member made of an elemental semiconductor, and the second member 210 is a member made of a compound semiconductor.

[0254] With this configuration, a high-performance amplifier 501 can be formed from a compound semiconductor in the second member 210. Moreover, since an elemental semiconductor suitable for forming a FET or the like can be used as the material in the first member 110, a switch or the like can be formed in the first member 110.

[0255] In the power amplifiers 11 to 22, the thermal conductivity of the first member 110 is greater than the thermal conductivity of the second member 210.

[0256] With this configuration, the second member 210, which has a low thermal conductivity, dissipates a small amount of heat generated in the amplifier 501, but by conducting the heat to the first member 110 through the inter-member connecting conductor, the heat can be dissipated by the first member 110. This makes it possible to effectively suppress a temperature rise in the amplifier 501.

[0257] In the power amplifying devices 11 to 22, the thickness of the second member 210 is smaller than the thickness of the first member 110.

[0258] In this manner, by using a configuration in which the thin second member 210 is mounted on the thick first member 110, the power amplifier devices 11 to 22 can have a small overall thickness even though they have a two-chip stack structure.

[0259] The above-described embodiments are intended to facilitate understanding of the present invention, and are not intended to limit the present invention. The present invention may be modified / improved without departing from the spirit thereof, and equivalents are also included in the present invention. That is, those in which a person skilled in the art appropriately changes the design of each embodiment are also included in the scope of the present invention as long as they have the characteristics of the present invention. For example, the elements and their arrangements, materials, conditions, shapes, sizes, etc. of each embodiment are not limited to those exemplified, and can be appropriately changed. In addition, each embodiment is an example, and it goes without saying that partial replacement or combination of the configurations shown in different embodiments is possible, and these are also included in the scope of the present invention as long as they include the characteristics of the present invention. [Explanation of symbols]

[0260] 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22...Power amplifier 31...Input terminal 32...Output terminal 33…Power supply terminal 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72...Power amplifier circuit 110…First member 111...adhesive layer 113...first member side electrode 114…Conductor pillar 115...Solder layer 116...First conductor projection 119...Resist film 121...Substrate 122...first insulating film 123...Second insulating film 124...Third insulating film 131…Heat spreader 132a, 132b, 132cb, 132cd, 132db, 132dd, 132de...first member electrodes 132ca, 132cc, 132ce, 132da, 132dc, 132e, 132ia, 132ib, 132ic, 132id, 132ie, 132if...First component metal wiring 133…First component via 210...Second member 211…Mother board 212...Peeling layer 213...Second member side electrode 213a…Emitter pad 214…Conductor pillar 215...Solder layer 216...Second conductor projection 221B…Base layer 221C…Collector layer 221E…Emitter layer 222B…Base electrode 222C…Collector electrode 222E…Emitter electrode 223E…Emitter wiring 224...Interlayer insulating film 225...First insulating film 226...Second insulating film 300...RF circuit module 301...PA circuit element 310...Module board 311...Substrate side electrode 312...Substrate side electrode 313…Mold resin 351a, 351b, 351c, 351d, 351i, 351j, 351k, 351m, 351n, 351p... Inter-component connecting conductors 351aa, 351da, 351e, 351f, 351g…Rewiring 351ab, 351db, 351h…Redistribution vias 400…1st circuit 401...Amplifier control circuit 402...Switch control circuit 411, 412, 413...Termination circuit 431, 432, 433, 434, 435, 436…Switches 441, 442, 443, 443a...matching circuit 444...90 degree phase shift circuit 445...Output matching circuit 500…Second circuit 501, 501c...Amplifier 501a...Transistor element 502...Bias circuit 503...Bias transistor 504, 505...Transistor 506…Resistance element 507...Current source 601...Matching circuit 602...Balan 651, 652, 653...Inductors 651a, 652a, 653a...Intermediate tap 701…Termination circuit 702, 703…matching circuit 751…Power supply

Claims

1. A module substrate having electrodes for mounting components; A first member having a first circuit formed therein; a second member having a second circuit formed therein; an inter-member connection conductor that electrically connects the first circuit and the second circuit without passing through the module substrate; the second member is mounted to the first member; the second circuit includes a first amplifier that amplifies the radio frequency signal and outputs a first amplified signal; the first circuit includes a control circuit that controls an operation of the second circuit; the first member is flip-chip bonded to the module substrate; the first member has a first-member-side conductor protrusion connected to the electrode of the module substrate, the second member has a second-member-side conductor protrusion connected to the electrode of the module substrate, At least a part of a first termination circuit is formed in the first member, the first termination circuit being connected to the first amplifier through the inter-member connection conductor and attenuating harmonic components of the first amplified signal. RF circuit module.

2. 2. The RF circuit module according to claim 1, the first termination circuit includes a first inductor formed in the first member; RF circuit module.

3. 3. The RF circuit module according to claim 1, the first termination circuit includes a second inductor formed by the inter-member connection conductor; RF circuit module.

4. 4. The RF circuit module according to claim 1, the first termination circuit includes a switch that switches the frequency of the harmonic component to be attenuated. RF circuit module.

5. 5. The RF circuit module according to claim 1, At least a part of a first matching circuit that adjusts an impedance for a fundamental wave of the first amplified signal when a circuit downstream of the first amplifier is viewed from the first amplifier is formed in the first member, the first matching circuit includes a switch that switches the impedance; RF circuit module.

6. 6. The RF circuit module according to claim 1, A part of the first termination circuit is formed in the first member, A part of a first matching circuit that adjusts impedance for a fundamental wave of the first amplified signal when a circuit downstream of the first amplifier is viewed from the first amplifier is formed in the first member, the first termination circuit and the first matching circuit include a second inductor formed by the inter-member connecting conductor and connected to the first amplifier; RF circuit module.

7. 4. The RF circuit module according to claim 1, the radio frequency signal includes a first signal and a second signal that constitute a balanced signal; the first amplifier amplifies the first signal and outputs the first amplified signal; the second circuit further includes a second amplifier that amplifies the second signal and outputs a second amplified signal; the control circuit further controls operation of the second amplifier; the first member is provided with at least a part of a second termination circuit that is connected to the second amplifier through the inter-member connection conductor and attenuates harmonic components of the second amplified signal; RF circuit module.

8. 4. The RF circuit module according to claim 1, the radio frequency signal includes a first signal and a second signal that is out of phase with the first signal; the first amplifier amplifies the second signal and outputs a second amplified signal when a power level of the second signal indicates a predetermined power level or higher; the second circuit further includes a second amplifier that amplifies the first signal and outputs the first amplified signal; the control circuit further controls operation of the second amplifier; the first member is provided with at least a part of a second termination circuit that is connected to the second amplifier through the inter-member connection conductor and attenuates harmonic components of the second amplified signal; RF circuit module.

9. 9. The RF circuit module according to claim 8, the first circuit includes a phase shift circuit that shifts a phase of the first amplified signal; the phase shift circuit includes a switch for switching the amount of phase shift. RF circuit module.

10. 10. The RF circuit module according to claim 8, a first matching circuit is formed in the first member to generate a third amplified signal by combining the first amplified signal and the second amplified signal, and to adjust impedance of a fundamental wave of the third amplified signal when a circuit downstream of the first amplifier and the second amplifier is viewed from the first amplifier and the second amplifier; the first matching circuit includes a switch that switches the impedance. RF circuit module.

11. The RF circuit module according to any one of claims 1 to 10, a heat spreader is provided on the first member at a position overlapping with the first amplifier when the second member is viewed in a plan view; RF circuit module.

12. The RF circuit module according to any one of claims 1 to 11, The first termination circuit comprises: a third inductor having a first end connected to the first amplifier, a center tap, and a second end connected to ground; a switch having a first end connected to a center tap of the third inductor and a second end grounded, the switch switching between conduction and non-conduction between the first end and the second end; RF circuit module.

13. The RF circuit module according to any one of claims 1 to 12, At least a part of a first matching circuit that adjusts an impedance for a fundamental wave of the first amplified signal when a circuit downstream of the first amplifier is viewed from the first amplifier is formed in the first member, The first matching circuit is a fourth inductor having a first end connected to the first amplifier, a center tap, and a second end connected to an output terminal; a switch having a first end connected to a center tap of the fourth inductor and a second end connected to the output terminal, the switch switching between conduction and non-conduction between the first end and the second end; RF circuit module.

14. The RF circuit module according to any one of claims 1 to 13, At least a part of a second matching circuit that adjusts an impedance of a fundamental wave of the radio frequency signal when the first amplifier is viewed from an input terminal is formed in the first member, The second matching circuit is a fifth inductor having a first end connected to the first amplifier, a center tap, and a second end connected to the input terminal; a switch having a first end connected to a center tap of the fifth inductor and a second end connected to the input terminal, the switch switching between conduction and non-conduction between the first end and the second end; RF circuit module.

15. 15. The RF circuit module according to claim 1, the first member is a single semiconductor member; The second member is a compound semiconductor member. RF circuit module.

16. 16. The RF circuit module according to claim 1, The thermal conductivity of the first member is greater than the thermal conductivity of the second member. RF circuit module.

17. 17. The RF circuit module according to claim 1, The thickness of the second member is smaller than the thickness of the first member. RF circuit module.

18. 8. The RF circuit module according to claim 7, a balun is provided on the module board to convert the first amplified signal and the second amplified signal supplied through the second member side conductor protrusion into a third amplified signal which is an unbalanced signal; RF circuit module.

19. 20. The RF circuit module according to claim 18, the first member is provided with the third amplified signal from the balun through the first member side conductor protrusion, and a first matching circuit is formed to adjust impedance for a fundamental wave of the third amplified signal when a circuit downstream of the balun is viewed from the balun; the first matching circuit includes a switch that switches the impedance; RF circuit module.

20. The RF circuit module according to any one of claims 7 to 10, the second amplifier is grounded through the second member side conductor protrusion, the second termination circuit is grounded through the second member and the second member side conductor protrusion. RF circuit module.

21. 18. The RF circuit module according to claim 1, the first amplifier is grounded through the second member side conductor protrusion, the first termination circuit is grounded through the second member and the second member side conductor protrusion portion; RF circuit module.

22. The RF circuit module according to any one of claims 1 to 17, the first member is flip-chip bonded to the module substrate by the first member side conductor protrusion, the inter-member connection conductor is a conductor formed on either the first member or the second member; RF circuit module.

23. The RF circuit module according to any one of claims 1 to 17, the second member has one or more second member side conductor projections, At least one of the one or more second-member-side conductor projections is provided so as to overlap with the first amplifier when the second member is seen in a plan view. RF circuit module.

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