Semiconductor device, display device, photoelectric conversion device, electronic device, lighting device, mobile object, wearable device, and method for manufacturing semiconductor device

Abstract

To provide a technique advantageous for accurate management of the surface shape of a lens.SOLUTION: A semiconductor device includes a pixel region in which a plurality of pixels are arranged on a substrate, and a monitor region. In the pixel region, a plurality of lenses are arranged on a ground layer so as not to expose the ground layer. In the monitor region, a plurality of lenses for monitoring are arranged on the ground layer. The plurality of lenses for monitoring include a lens pair for monitoring arranged between two lenses for monitoring adjacent to each other so as not to expose the ground layer, and a lens pair for monitoring in which an exposed part where the ground layer is exposed is arranged between the two lenses for monitoring adjacent to each other.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a semiconductor device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a moving object, a wearable device, and a method for manufacturing a semiconductor device. [Background technology]

[0002] In a semiconductor device in which a plurality of pixels each including a photoelectric conversion element and a light emitting element are arranged, a microlens array may be provided to improve sensitivity and light emission efficiency. Patent Document 1 discloses a solid-state imaging device using a gapless structure in which no lens is formed between the lenses of the microlens array (gaps) in order to suppress a decrease in sensitivity due to miniaturization of pixels. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-253464 A Summary of the Invention [Problem to be solved by the invention]

[0004] When there are gaps between the lenses of a microlens array, the process control of the lens surface shape can be easily performed by measuring the lens surface shape using an atomic force microscope (AFM) etc. with the gap as a reference point. On the other hand, in the case of a gapless structure, since there is no gap between the lenses, it is not possible to set a reference point, and therefore it is not possible to measure the lens height using an AFM.

[0005] An object of the present invention is to provide a technique that is advantageous for controlling the surface shape of a lens with high precision. [Means for solving the problem]

[0006] In view of the above problems, a semiconductor device according to an embodiment of the present invention is a semiconductor device including a pixel region in which a plurality of pixels are arranged on a substrate, and a monitor region, wherein the pixel region includes a plurality of lenses arranged on an underlayer so as not to expose the underlayer, and the monitor region includes a plurality of monitor lenses arranged on the underlayer, the plurality of monitor lenses including a monitor lens pair arranged between two adjacent monitor lenses so as not to expose the underlayer, and a monitor lens pair in which an exposed portion where the underlayer is exposed is arranged between two adjacent monitor lenses. the plurality of lenses include a first lens, a second lens, a third lens, and a fourth lens arranged adjacent to each other, and the base layer is not exposed in a portion surrounded by the first lens, the second lens, the third lens, and the fourth lens. It is characterized by: Effect of the Invention

[0007] According to the present invention, it is possible to provide a technique that is advantageous for controlling the surface shape of a lens with high precision. [Brief description of the drawings]

[0008] [Figure 1] 1 is a diagram showing a configuration example of a semiconductor device according to an embodiment of the present invention; [Diagram 2] 1A and 1B are a plan view and a cross-sectional view showing a configuration example of a pixel region of a semiconductor device of a comparative example. [Diagram 3] 2A and 2B are a plan view and a cross-sectional view showing a configuration example of a pixel region of the semiconductor device in FIG. [Figure 4] 2 is a plan view showing a configuration example of a monitor region of the semiconductor device of FIG. 1; [Diagram 5] 5 is a cross-sectional view showing a configuration example of a monitor region of the semiconductor device of FIG. 4. [Figure 6] 2 is a plan view showing a configuration example of a monitor region of the semiconductor device of FIG. 1; [Figure 7] 7 is a cross-sectional view showing a configuration example of a monitor region of the semiconductor device of FIG. 6. [Figure 8] 2 is a plan view showing a configuration example of a monitor region of the semiconductor device of FIG. 1; [Figure 9] 9 is a cross-sectional view showing a configuration example of a monitor region of the semiconductor device of FIG. 8. [Figure 10] 2 is a plan view showing a configuration example of a pixel region of the semiconductor device in FIG. 1; [Figure 11]11 is a cross-sectional view showing a configuration example of a pixel region of the semiconductor device in FIG. [Figure 12] 2 is a plan view showing a configuration example of a monitor region of the semiconductor device of FIG. 1; [Figure 13] 13 is a cross-sectional view showing a configuration example of a monitor region of the semiconductor device of FIG. 12. [Figure 14] 2 is a cross-sectional view showing a configuration example of a pixel of the semiconductor device in FIG. [Figure 15] FIG. 1 is a diagram showing an example of an image forming apparatus using the semiconductor device of the present embodiment. [Figure 16] FIG. 1 is a diagram showing an example of a display device using the semiconductor device of this embodiment. [Figure 17] FIG. 1 is a diagram showing an example of a photoelectric conversion device using the semiconductor device of this embodiment. [Figure 18] 1A to 1C are diagrams illustrating examples of electronic devices using a semiconductor device of this embodiment. [Figure 19] FIG. 1 is a diagram showing an example of a display device using the semiconductor device of this embodiment. [Figure 20] 1 is a diagram showing an example of a lighting device using the semiconductor device of this embodiment; [Figure 21] FIG. 1 is a diagram showing an example of a moving object using the semiconductor device of the present embodiment. [Figure 22] FIG. 1 is a diagram showing an example of a wearable device using the semiconductor device of the present embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] A semiconductor device according to an embodiment of the present disclosure will be described with reference to Figs. 1 to 13. Fig. 1 is a plan view showing a configuration example of a semiconductor device 101 according to the present embodiment. Fig. 1 shows the semiconductor device 101 formed on a substrate 100 using a semiconductor wafer. For the sake of explanation, Fig. 1 shows two semiconductor devices 101 formed on the substrate 100. However, in reality, more semiconductor devices 101 may be provided on one substrate 100. For example, a semiconductor wafer such as silicon may be used as the substrate 100.

[0011] Each of the semiconductor devices 101 may include a pixel region 104 in which a plurality of pixels are arranged, and a peripheral region 103. The plurality of pixels arranged in the pixel region 104 may include, for example, a photoelectric conversion element. Each of the plurality of pixels arranged in the pixel region 104 may include a photoelectric conversion element, or at least some of the plurality of pixels may include a photoelectric conversion element. When the pixels arranged in the pixel region 104 include a photoelectric conversion element, the semiconductor device 101 may also be called a photoelectric conversion device. In addition, the plurality of pixels arranged in the pixel region 104 may include, for example, a light-emitting element. Each of the plurality of pixels arranged in the pixel region 104 may include a light-emitting element, or at least some of the plurality of pixels may include a light-emitting element. When the pixels arranged in the pixel region 104 include a light-emitting element, the semiconductor device 101 may also be called a light-emitting device. Hereinafter, the description will be given assuming that the pixels arranged in the pixel region 104 include a light-emitting element. The semiconductor device 101 may be, for example, a device using self-luminous elements such as organic electroluminescence (EL) elements, inorganic EL elements, light-emitting diodes, etc. as light-emitting elements in pixels. Also, for example, the semiconductor device 101 may be a so-called liquid crystal display device using liquid crystal elements or the like in pixels.

[0012] The semiconductor device 101 may further include a dummy pixel region 105 in which dummy pixels are arranged on the substrate 100 so as to be adjacent to the pixel region 104. The dummy pixels arranged in the dummy pixel region 105 may not include a light-emitting element. For example, the dummy pixels may include a light-emitting element but may not have a configuration that causes the light-emitting element to emit light. For example, the dummy pixels may have the same configuration as the pixels arranged in the pixel region 104, but may be configured not to be used as pixels that emit light in the semiconductor device 101. In contrast to the dummy pixel region 105 in which such dummy pixels are arranged, the pixel region 104 may also be called an effective pixel region.

[0013] A driving circuit for driving pixels arranged in the pixel region 104 and the like may be arranged in the peripheral region 103. A signal processing circuit for processing signals output from the pixel region 104 may also be arranged in the peripheral region 103. For example, the peripheral region 103 may also be provided with terminals (pads) for connection to an external circuit arranged outside the semiconductor device 101.

[0014] In this embodiment, a monitor region 106 is further arranged in the peripheral region 103 of the semiconductor device 101. A monitor lens for managing the surface shape of a lens (microlens) arranged in the pixel region 104 is arranged in the monitor region 106. For example, a plurality of lenses can be arranged in the pixel region 104 so as to correspond to each of a plurality of pixels. In this embodiment, the shape of the lens arranged in the pixel region 104 can be managed by the monitor lens arranged in the monitor region 106 provided separately from the pixel region 104. Therefore, even if the monitor lens is damaged when measuring the shape of the monitor lens, the possibility of damaging the lens arranged in the pixel region 104 is very small. In other words, in the manufacturing process of the semiconductor device 101, by arranging the monitor lens for managing the shape of the lens in the monitor region 106 outside the pixel region 104, the influence on the image (picture, character, etc.) displayed in the pixel region 104 is very small. In addition, although details will be described later, if a gapless structure in which no lens is formed (gap) between the lenses of the microlens array is adopted in the pixel region 104, it may be difficult to measure the shape of the lens itself. Therefore, in this embodiment, the monitor region 106 is provided.

[0015] The monitor region 106 may be disposed in the dummy pixel region 105. In other words, a part of the dummy pixel region 105 may be the monitor region 106. When the monitor region 106 is disposed in the dummy pixel region 105 adjacent to the pixel region 104, the following advantages are obtained compared to when the monitor region 106 is distant from the pixel region 104. Since the dummy pixel region 105 is close to the pixel region 104, the structure between the substrate 100 and the base layer on which the monitor lens is disposed is often similar to the structure between the substrate 100 and the base layer on which the lens of the pixel region 104 is disposed. Therefore, the focus position during exposure and the degree of reflection of the exposure light from the base structure when patterning the monitor lens itself or a pattern for forming the monitor lens using a photolithography process or the like are close to the conditions in the pixel region 104. Therefore, a monitor lens having a shape closer to the lens formed in the pixel region 104 can be formed in the monitor region 106. In a display device, the pixels in the monitor region 106 are pixels that do not contribute to display. The pixels in the monitor region 106 do not emit light based on display data. The pixels in the monitor region 106 may have a configuration similar to that of the pixels in the pixel region 104, but are configured not to contribute to display, for example, because no display data is input. On the other hand, when display data is input to the pixels in the monitor region 106, a part of the pixel circuit or a part of the pixel configuration is missing, so that the pixels do not contribute to display. In an imaging device, the pixels in the monitor region 106 are pixels that do not contribute to imaging. Examples of pixels that do not contribute to imaging are similar to those described for the display device.

[0016] Next, as a comparative example to this embodiment, a description will be given of lenses and a process control method for the lens shape when gaps where no lenses are formed are provided between the lenses of the lens array in the pixel region 104. Following the comparative example, a description will be given of lenses with a gapless structure where no gaps where lenses are formed are provided between the lenses, issues in performing process control of the lens shape, and further of process control of the lens shape realized by this embodiment.

[0017] 2(a) and 2(b) are a plan view and a cross-sectional view for explaining a pixel 201 arranged in a pixel region 104 of a semiconductor device 101 of a comparative example. FIG. 2(a) shows a planar structure of a lens 202 of a comparative example, in which there is a gap between two adjacent lenses 202. FIG. 2(a) shows a part of the pixel region 104, in which a plurality of pixels 201 are arranged in a two-dimensional array at a predetermined pitch. Furthermore, a plurality of lenses 202 are arranged at a predetermined pitch so that one lens 202 corresponds to one pixel 201. It can also be said that a lens array (microlens array) is arranged in the pixel region 104. In the configuration shown in FIG. 2(a), the pixel 201 is hexagonal, but is not limited thereto. In a plan view, the pixel 201 may be rectangular, such as a square or a rectangle, or may be polygonal. Here, in this specification, the plan view refers to the field of view with respect to the surface of the substrate 100 shown in Fig. 2(a) on which the pixels 201 including the lenses 202 and the like are formed. The pitch (spacing) at which the lenses 202 are arranged can be defined, for example, as the distance between the apexes of the lenses 202. For example, in the plan view, the geometric center of gravity of the shape of the lenses 202 defined by the outer edge of each lens 202 is set to be the center of the lens 202. The pitch (spacing) at which the lenses 202 are arranged may be defined as the distance between the centers of the lenses 202 in this plan view.

[0018] Fig. 2(b) is a cross-sectional view taken along line A-A' in Fig. 2(a). In the configuration shown in Fig. 2(b), the pixel 201 disposed in the pixel region 104 may include a structure 301, a lower electrode 302, an insulating layer 303, an organic layer 304 including a light-emitting layer, an upper electrode 305, a protective layer 306, a planarizing layer 307, a color filter layer 308, and an underlayer 309.

[0019] The structure 301 may include switching elements, such as transistors for driving the pixels 201, formed on the substrate 100, and conductors, such as an insulating layer, a wiring pattern layer, and a contact plug. The structure 301 may have, for example, an insulating film containing silicon oxide or the like, and a wiring pattern containing copper, aluminum, or the like as a main component.

[0020] A lower electrode 302 is disposed on the structure 301. In this specification, "on" refers to the direction from the substrate 100 (structure 301) toward the lens 202. The lower electrode 302 can function as an anode or cathode of the light-emitting element included in the pixel 201. The lower electrode 302 may also have a role as a reflective layer for light emitted from a light-emitting layer provided in the organic layer 304. For this reason, the lower electrode 302 may be made of a metal such as aluminum or silver having a high reflectivity, or an alloy thereof.

[0021] The insulating layer 303 may be formed so as to cover the end of the lower electrode 302. The insulating layer 303 may also be called a pixel separation film or a bank. The insulating layer 303 may be made of a so-called silicon oxide-based material such as silicon nitride, silicon oxynitride, or silicon oxide. The light-emitting position of each pixel 201 may be defined by the arrangement of the lower electrode 302 and the lower electrode 302 exposed in an opening provided in the insulating layer 303.

[0022] An organic layer 304 is disposed so as to cover the lower electrode 302 and the insulating layer 303. The organic layer 304 may be composed of a plurality of layers including a light-emitting layer. The plurality of layers may include a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc.

[0023] An upper electrode 305 is disposed on the organic layer 304. The upper electrode 305 can function as a cathode or an anode of a light-emitting element included in the pixel 201. The upper electrode 305 is a conductive layer having translucency that transmits light emitted from a light-emitting layer provided in the organic layer 304. The upper electrode 305 can be made of a transparent conductive material such as an alloy mainly composed of silver or magnesium, or indium tin oxide (ITO). The organic layer 304 and the upper electrode 305 may be shared by a plurality of pixels 201 as shown in FIG. 2(b).

[0024] A protective layer 306 is disposed on the upper electrode 305. The protective layer 306 is disposed to suppress the diffusion of moisture from the outside of the semiconductor device 101 and impurities from the color filter layer 308, etc., into the organic layer 304 and the structure 301. The protective layer 306 may be made of, for example, silicon nitride, silicon oxide, aluminum oxide, or the like.

[0025] A planarization layer 307 is disposed on the protective layer 306. The planarization layer 307 is a layer for planarizing the unevenness of the upper surface of the protective layer 306. For example, an organic material may be used for the planarization layer 307. For example, a resin that can be spin-coated may be used for the planarization layer 307. The planarization layer 307 may not be provided when the unevenness of the upper surface of the protective layer 306 is not large or when the unevenness of the upper surface of the protective layer 306 can be planarized using a polishing process or the like.

[0026] A color filter layer 308 is disposed on the planarization layer 307. The color filter layer 308 may include a plurality of types of filters that transmit (or absorb) light in a specific frequency band. For example, in the pixel region 104, filters that transmit primary colors may be disposed such that each pixel 201 corresponds to a filter of one color. As shown in FIG. 2(b), the color filter layer 308 may have three types of filters, for example, a filter 308B that transmits blue light, a filter 308G that transmits green light, and a filter 308R that transmits red light.

[0027] The lens 202 is disposed on the color filter layer 308 via the base layer 309. The base layer 309 can be a planarizing layer that flattens the surface of the layer below the base layer 309 (for example, the upper surface of the color filter layer 308). The base layer 309 may be made of the same material as the planarizing layer 307. Furthermore, the base layer 309 may not be provided when the upper surface of the color filter layer 308 does not have large irregularities.

[0028] Next, a description will be given of process control of the shape of lens 202. In lens 202, the upper surface of underlayer 309 is set as a reference point, and the difference between the height of the reference point and the height of the apex (vertex) of lens 202 is defined as height H1 of lens 202. For example, by scanning the surface including lens 202 and underlayer 309 using an atomic force microscope (AFM), height H1 of lens 202 can be measured and process control can be performed.

[0029] In process control, for example, the lens 202 in the pixel region 104 may be directly measured. Also, as described above, in order to suppress the influence of damage when measuring the shape of the lens 202, the lens 202 arranged in the dummy pixel region 105 may be measured. Also, for example, the shape of a monitor lens formed in the monitor region 106 arranged in the peripheral region 103 using a mask pattern similar to that of the lens 202 may be measured.

[0030] Next, a problem in performing process control of the lens shape when a gapless structure in which there is no gap between two adjacent lenses is used in the pixel region 104 will be described. FIGS. 3(a) and 3(b) are a plan view and a cross-sectional view for explaining a pixel 201 arranged in the pixel region 104 of the semiconductor device 101 of this embodiment. FIG. 3(a) shows a planar structure of the lens 212 of this embodiment in which there is no gap between two adjacent lenses 212. Specifically, FIG. 3(a) shows a part of the pixel region 104, in which a plurality of pixels 201 are arranged in a two-dimensional array at a predetermined pitch in the pixel region 104. Furthermore, a plurality of lenses 212 are arranged on the underlayer 309 at a predetermined pitch so that one lens 212 corresponds to one pixel 201 and the underlayer 309 is not exposed. Each lens 212 is in contact with the adjacent lens 212, and in a plan view, there is no area in the gap between the lenses 212 where the underlayer 309 under the lens is exposed. Here, the pitch (spacing) at which the lenses 212 are arranged can be defined, for example, as the distance between the apexes of the respective lenses 212. Also, for example, the geometric center of gravity position in a plan view of the shape of the lens 212, the outer edge of which is defined as the valley between adjacent lenses 212, is set to be the center of the lens 212. The pitch (spacing) at which the lenses 212 are arranged may be defined as the distance between the centers of the lenses 212 in this plan view.

[0031] Fig. 3(b) is a cross-sectional view taken along line B-B' in Fig. 3(a). The configuration between the lens 212 and the substrate 100 (structure 301) may be the same as that described above with reference to Fig. 2(b), and therefore will not be described here.

[0032] Here, the process control of the shape of the lens 212 will be considered. In the lens 212, the upper surface of the underlayer 309 is set as a reference point, and the difference between the height of the reference point and the height of the apex of the lens 212 is defined as the height H2 of the lens 212. For example, in the process control of the shape of the lens 212, the surface of the lens 212 is scanned using an AFM as described above to measure the unevenness of the lens 212. In this case, since the underlayer 309 is not exposed on the surface to be measured, the upper surface of the underlayer 309 cannot be set as the reference point. If the reference point for the height when the lens 212 is measured is a point P that is a valley part of the adjacent lenses 212, the difference between the height of the point P and the height of the apex of the lens 212 is H2' as shown in FIG. 3(b). In this case, H2 ≠ H2', and a value different from the actual height H2 of the lens 212 is measured. 3(a) and 3(b), if the lenses 212 are arranged so that the base layer 309 is not exposed between the adjacent lenses 212, there is a problem that the height H2 of the lenses 212 cannot be accurately measured. As pixels become finer and more highly integrated, a gapless structure is likely to be adopted, and in order to achieve higher resolution display in the semiconductor device 101, process control of the shape of the lenses 212 may become more important.

[0033] Next, a configuration of this embodiment will be described that addresses the problem that the height H2 of the lens 212 cannot be accurately measured using an AFM when a gapless structure of the lens 212 is adopted in the pixel region 104. Figures 4 and 5 are a plan view and a cross-sectional view explaining the monitor lens 222 arranged in the monitor region 106 of the semiconductor device 101 of this embodiment. Fig. 4 shows a part of the monitor region 106, and Fig. 5 is a cross-sectional view taken along the line CC' shown in Fig. 4.

[0034] In the monitor region 106, a plurality of monitor lenses 222 are arranged on the base layer 309. The plurality of monitor lenses 222 include a pair of monitor lenses (e.g., a pair of monitor lenses 222a and 222b) arranged so that the base layer 309 is not exposed between two adjacent monitor lenses 222, and a pair of monitor lenses (e.g., a pair of monitor lenses 222a and 222c) arranged with an exposed portion 319 where the base layer 309 is exposed between two adjacent monitor lenses 222. That is, in a plan view, the plurality of monitor lenses 222 and the plurality of exposed portions 319 are two-dimensionally arranged in the monitor region 106. Also, in the monitor region 106, a part of the base layer 309 below the monitor lenses 222 is exposed.

[0035] In this embodiment, the height of the monitor lens 222 can be measured in the process control of the shape of the lens 212. The shape of the monitor lens 222 can be measured by, for example, using an AFM to scan the unevenness of the surface including the monitor lens 222 and the exposed portion 319 in the monitor region 106. In this case, unlike the lens 212 in the pixel region 104, the exposed portion 319 is provided, so that the exposed portion 319 can be used as a reference point for the height in the AFM measurement. The difference between the height of this reference point and the height of the top of the monitor lens 222 is the height H3 of the monitor lens 222 as shown in FIG. 5, and the height of the monitor lens 222 can be accurately measured.

[0036] The monitor lens 222 is disposed to monitor the shape of the lens 212 in the pixel region 104. Therefore, if the monitor lens 222 has the same shape as the lens 212, the accuracy of process control can be improved. Therefore, the mask pattern for forming the monitor lens 222 may include the same mask pattern as the mask pattern for forming the plurality of lenses 212 disposed in the pixel region 104. For example, the mask pattern for forming the monitor lens 222 may be the same as a part of the mask pattern for forming the plurality of lenses 212 disposed in the pixel region 104. Therefore, for example, the interval at which two adjacent monitor lenses among the plurality of monitor lenses 222 are disposed so that the base layer 309 is not exposed (for example, the interval between the monitor lens 222a and the monitor lens 222b) are disposed may be the same as the pitch at which the plurality of lenses 212 disposed in the pixel region 104 are disposed. Also, for example, in the monitor region 106, as shown in FIG. 5, the configuration from the structure 301 to the base layer 309 may be the same as that of the pixel region 104. That is, the pixel 201 in which the lens 212 is disposed and the monitor pixel 201' in which the monitor lens 222 is disposed may have the same configuration. By making the configuration of the substrate 100 (structure 301) more similar to that of the pixel region 104 than that of the monitor lens 222, the conditions of the photolithography process for forming the monitor lens 222 become equivalent to those of the lens 212, and the monitor lens 222 having a shape close to that of the lens 212 may be formed. However, this is not limited to this, and in the monitor region 106, at least a part of the configuration from the structure 301 to the underlayer 309 (for example, a part of the configuration of the structure 301, etc.) may be different from that of the pixel region 104. Also, for example, in the monitor region 106, components of the pixel 201 such as the lower electrode 302, the organic layer 304, and the upper electrode 305 may not be formed. Here, the interval at which the monitor lenses 222 are disposed may be, for example, the distance between the tops of the monitor lenses 222. Also, for example, the center of monitor lens 222 is set to be the geometric center of gravity in a plan view of the shape of lens 212, the outer edge of which is defined as the valley between adjacent monitor lenses in each monitor lens 222.The interval at which the monitor lenses 222 are arranged may be the distance between the centers of the monitor lenses 222 in this plan view.

[0037] As described above, the monitor lens 222 may have a shape similar to that of the lens 212. However, the monitor lens 222 is disposed at a position away from the lens 212 disposed in the pixel region 104. In addition, the exposed portion 319 is disposed in the monitor region 106. Due to the influence of these factors, even if the monitor lens 222 is formed using the same mask pattern as that of the lens 212, the monitor lens 222 may not have exactly the same shape as the lens 212. Here, the influence of the exposed portion 319 may include the optical influence of the exposure light from the exposed portion 319 when the monitor lens 222 is exposed to light, the influence of the difference in stress between adjacent lenses caused by the non-uniformity of the shape of the monitor lens 222, and the like. However, the correlation between the shapes of the lens 212 and the monitor lens 222 is obtained in advance by using a measurement method other than the AFM during prototyping, etc. For example, by acquiring the cross-sectional shapes of the lens 212 and the monitoring lens 222 in advance using a transmission electron microscope (TEM), it becomes possible to use the monitoring lens 222 for monitoring the shape of the lens 212.

[0038] Next, a method for manufacturing the semiconductor device 101 of this embodiment will be described. In this embodiment, the multiple monitor lenses 222 arranged in the monitor region 106 can be formed simultaneously with the multiple lenses 212 arranged in the pixel region 104. Here, a case where the monitor lenses 222 are manufactured simultaneously with the lenses 212 by a gradation exposure method will be described. In addition, a case where an area gradation mask is used will be described as an example of the gradation exposure method. The area gradation mask is a method of creating a gradation in the exposure light by changing the density of a minute light-shielding part that is not resolved by an exposure device, or by changing the area of ​​a minute light-shielding part. However, other masks such as a halftone mask may be used as the gradation exposure method. In addition, the monitor lenses 222 and the lenses 212 do not necessarily need to be manufactured by the gradation exposure method, and may be manufactured by using, for example, a reflow method or an etch-back method.

[0039] First, the steps up to forming the base layer 309 shown in FIG. 3(b) and FIG. 5 can be formed using a known semiconductor process. After the base layer 309 is formed, a lens material layer (photosensitive material layer) using a photosensitive organic material is formed on the base layer 309 across the pixel region 104 and the peripheral region 103. For example, a photosensitive resin is applied as the lens material layer using a spin coating method. Here, it is also possible to omit the base layer 309 and flatten the upper surface of the color filter layer 308 using the lens material layer. In that case, it can be said that the color filter layer 308 is used instead of the base layer 309 as the base layer on which the lens 212 and the monitor lens 222 are arranged.

[0040] After forming the lens material layer, an arbitrary portion of the lens material layer is exposed to light using an area conversion mask, and then developed and baked. Through the above steps, the lens 212 is formed in the pixel region 104, and the monitor lens 222 is formed in the monitor region 106. After the lens 212 and the monitor lens 222 are formed, the shape and height of the lens 212 are monitored by measuring the monitor lens 222 formed in the monitor region 106 using an AFM or the like. If the shape including the height H3 of the monitor lens 222 is a desired value, the process of manufacturing the semiconductor device 101 proceeds to the next process (step). On the other hand, if the shape including the height H3 of the monitor lens 222 is not a desired value, the lens 212 and the monitor lens 222 may be removed from the substrate 100 (structure 301). In that case, the lens 212 and the monitor lens 222 may be formed again (rework), and the shape of the monitor lens 222 may be measured.

[0041] 6 and 7 are a plan view and a cross-sectional view showing a modified example of the monitor region 106 of the semiconductor device 101 shown in the above-mentioned Figures 4 and 5. Fig. 6 shows a part of the monitor region 106, and Fig. 7 is a cross-sectional view taken along the line D-D' shown in Fig. 6.

[0042] 6 and 7, the multiple monitor lenses 222 also include a monitor lens pair (e.g., a pair of monitor lenses 222a and 222b) arranged so that base layer 309 is not exposed between two adjacent monitor lenses 222, and a monitor lens pair (e.g., a pair of monitor lenses 222a and 222c) in which exposed portion 319 where base layer 309 is exposed is arranged between two adjacent monitor lenses 222. Furthermore, in the configuration shown in Fig. 6 and 7, in addition to the configuration described above using Fig. 4 and Fig. 5, the multiple monitor lenses 222 include monitor lens 222d that is not in contact with exposed portion 319.

[0043] 6 and 7, as described above, the mask pattern for forming the monitor lens 222 can be formed using the same mask pattern as the mask pattern for forming the plurality of lenses 212 arranged in the pixel region 104. That is, the interval between two adjacent monitor lenses among the plurality of monitor lenses 222 arranged so that the base layer 309 is not exposed (for example, the interval between the monitor lens 222a and the monitor lens 222b) can be the same as the pitch at which the plurality of lenses 212 arranged in the pixel region 104 are arranged. Therefore, in FIG. 7, the outline of the lens 212 arranged in the pixel region 104 is shown by using the dashed line 213, and as shown by the dashed line 213, the height of the lens 212 is H2.

[0044] The monitor lens 222a in contact with the exposed portion 319 may not have the same shape as the lens 212 even when, for example, the mask pattern is the same as that of the lens 212 during exposure, due to the influence of the adjacent exposed portion 319. As described above, the influence of the arrangement of the exposed portion 319 may include the optical influence of the exposure light from the exposed portion 319 when exposing the monitor lens 222, and the influence of the difference in stress between adjacent lenses due to the non-uniformity of the shape of the monitor lens 222. As a result, for example, the height of the monitor lens 222a may be lower than that of the lens 212. That is, as shown in FIG. 7, the relationship between the height H3 of the monitor lens 222a and the height H2 of the lens 212 may be H3 < H2.

[0045] On the other hand, the monitor lens 222d is not in contact with the exposed portion 319 and is formed at a position separated from the exposed portion 319 to some extent. Also, the monitor lens 222d is in contact with other monitor lenses 222 over its entire circumference. Therefore, similar to the lenses 212 arranged in a two-dimensional array, continuity occurs in the monitor lenses 222 for the monitor lens 222d. Therefore, the monitor lens 222d is less likely to be affected by the exposed portion 319 compared to the monitor lens 222a and can be formed in a shape closer to the lens 212 than the monitor lens 222a. As a result, the relationship between the height H3 of the monitor lens 222a, the height H4 of the monitor lens 222d, and the height H2 of the lens 212 may be H3 < H4 < H2. Also, for example, H4 ≈ H2 may hold.

[0046] Thus, when measuring the shape of the monitor lens 222, the monitor lens 222d not in contact with the exposed portion 319 is used as the measurement target. As a result, the monitor lens 222 having a shape closer to the lens 212 formed in the pixel region 104 is monitored. As a result, it becomes possible to perform process control of the surface shape of the lens 212 with higher accuracy.

[0047] Figures 8 and 9 are a plan view and a cross-sectional view showing a modification of monitor region 106 of semiconductor device 101 shown in the above-mentioned Figures 6 and 7. Figure 8 shows a part of monitor region 106, and Figure 9 is a cross-sectional view taken along the line E-E' shown in Figure 8.

[0048] 8 and 9, the multiple monitor lenses 222 include a monitor lens pair (e.g., a pair of monitor lenses 222a and 222b) arranged so that base layer 309 is not exposed between two adjacent monitor lenses 222, and a monitor lens pair (e.g., a pair of monitor lenses 222a and 222e) in which exposed portion 319 where base layer 309 is exposed is arranged between two adjacent monitor lenses 222. The multiple monitor lenses 222 also include monitor lens 222d that is not in contact with exposed portion 319.

[0049] 4 to 7, the interval between two of the plurality of monitor lenses 222 that are adjacent to each other through exposed portion 319 (for example, the interval between monitor lens 222a and monitor lens 222c) is wider than the pitch at which the plurality of lenses 212 arranged in pixel region 104 are arranged. The monitor region 106 can be said to be an area having a configuration in which some of the plurality of lenses 212 arranged at a predetermined pitch in pixel region 104 as monitor lenses 222 are not formed. On the other hand, in the configurations shown in FIGS. 8 and 9, the interval between two of the plurality of monitor lenses 222 that are adjacent to each other through exposed portion 319 (for example, the interval between monitor lens 222a and monitor lens 222e) can be the same as the pitch at which the plurality of lenses 212 arranged in pixel region 104 are arranged.

[0050] More specifically, two of the multiple monitor lenses 222 adjacent to each other via the exposed portion 319 include monitor lenses 222a and 222d that are in contact with one of the multiple monitor lenses 222, and monitor lens 222e that is not in contact with the other monitor lenses of the multiple monitor lenses 222. In this case, the diameter of monitor lens 222e is smaller than the diameter of two adjacent monitor lenses (e.g., monitor lenses 222a and 222d) that are arranged so that the base layer 309 is not exposed among the multiple monitor lenses 222 in a plan view. Thereby, exposed portion 319 that exposes the base layer 309 is arranged in the monitor region 106, and it becomes possible to set a reference point of height in AFM measurement. Monitor lens 222e can be formed using a mask pattern different from that of monitor lenses 222 other than monitor lens 222e. Here, the diameter of monitor lens 222e can be defined by the length of a line that passes through the top of monitor lens 222e and connects the outer edges of monitor lens 222e in a plan view. The diameter of two adjacent monitor lenses (e.g., monitor lenses 222a and 222d) that are arranged so as not to expose underlayer 309 can be defined as the distance between monitor lens 222a and monitor lens 222d. This is because 1 / 2 of the distance between monitor lens 222a and monitor lens 222d can correspond to the radius of monitor lens 222a and 222d.

[0051] 9, similarly to Fig. 7, the outline of the lens 212 disposed in the pixel region 104 is shown by using a dashed line 213. As shown by the dashed line 213, the height of the lens 212 is H2.

[0052] Since the lens 222a for monitor is in contact with the exposed portion 319, it can have a shape different from that of the lens 212 due to the influence of the exposed portion 319 as described above. However, compared with the configuration shown in FIG. 7, the exposed portion 319 is small, and in FIG. 7, there is a lens 222e for monitor in a part of the portion where the exposed portion 319 is arranged. As a result, the influence of the exposed portion 319 on the lens 222a for monitor is reduced, and the lens 222a for monitor shown in FIG. 9 can have a shape closer to the lens 212 than the lens 222a for monitor shown in FIG. 7. If the height of the lens 222a for monitor shown in FIG. 9 is H5, the relationship between the height H3 of the lens 222a for monitor shown in FIG. 7 and the height H2 of the lens 212 can be H3 < H5 < H2.

[0053] Also, as described above, the lens 222d for monitor is not in contact with the exposed portion 319, and the influence received from the exposed portion 319 is further reduced. Therefore, the lens 222d for monitor is less likely to be affected by the exposed portion 319 compared with the configuration shown in FIG. 7 and can be formed in a shape closer to the lens 212. If the height of the lens 222d for monitor in the configurations shown in FIGS. 8 and 9 is the height H6, the relationship between the height H6, the height H4 of the lens 222d for monitor shown in FIGS. 6 and 7, and the height H2 of the lens 212 can be H4 < H6 < H2. Also, for example, H4 < H6 ≒ H2 can be established.

[0054] In this way, in the monitor region 106, a plurality of lenses 222 for monitor are arranged at the same pitch as the pitch at which a plurality of lenses 212 arranged in the pixel region 104 are arranged. In this case, by forming some of the lenses 222 for monitor smaller than the other lenses 222 for monitor, an exposed portion 319 where the underlying layer 309 is exposed is provided. As a result, the lens 222 for monitor having a shape closer to the lens 212 formed in the pixel region 104 is monitored. As a result, process management of the surface shape of the lens 212 can be performed with higher accuracy.

[0055] 8 and 9 show an example in which the monitor lens 222e is formed in the same lens shape as the other monitor lenses 222 by using a gradation exposure method or the like. However, the present invention is not limited to this. For example, after forming the lens material layer, the mask in the portion in which the monitor lens 222e is formed may not have a gradation. In this case, for example, the monitor lens 222e may be disposed in the monitor region 106 of the semiconductor device 101 as a mesa-shaped resin layer instead of a lens-shaped one. Since the mesa-shaped monitor lens 222e is not gradation-exposed compared to the top of the lens shape, the height from the base layer 309 of the monitor lenses 222a and 222d formed in a lens shape may be higher than that of the monitor lenses 222a and 222d formed in a lens shape. Also, for example, the mesa-shaped monitor lens 222e may have a flatter top than the monitor lenses 222a and 222d formed in a lens shape. Furthermore, for example, the mesa-shaped or lens-shaped monitor lens 222e may be used to monitor the shape of the lens 212. As described above, by acquiring the correlation between the shapes of the lens 212 and the monitor lens 222e in advance during prototyping or the like, the monitor lens 222e can be used to monitor the shape of the lens 212. The mesa-shaped monitor lens 222e is likely to have a flat top, and therefore the height from the exposed portion 319 may be more accurately and easily measured than the lens-shaped monitor lens 222 whose top (apex) may be point-like. Also, for example, a mesa-shaped resin layer that is not in contact with the multiple monitor lenses 222 and has a flat top may be disposed in the monitor region 106 in addition to the monitor lens 222. The mesa-shaped resin layer may be surrounded by the exposed portion 319 in a plan view. The mesa-shaped resin layer may be higher in height from the base layer 309 than the lens-shaped monitor lens 222, similar to the case where the monitor lens 222e is formed in a mesa shape. The mesa-shaped resin layer may be larger in plan view than each of the monitor lenses 222. Furthermore, only one mesa-shaped resin layer may be disposed in the monitor region 106, or multiple mesa-shaped resin layers may be disposed.Furthermore, for example, in the above description, a plurality of monitor lenses 222 are patterned from the lens material layer in the monitor region 106, but when forming the monitor region 106, each monitor lens 222 may not be patterned, and an integrated mesa-shaped resin layer may be formed from the lens material layer in the monitor region 106. Even in this case, an exposed portion 319 where the base layer 309 is exposed is arranged in a part of the monitor region 106. As described above, by obtaining the correlation between the shapes of the lens 212 and the mesa-shaped resin layer in advance during prototyping, etc., it becomes possible to use the mesa-shaped resin layer for monitoring the shape of the lens 212.

[0056] In each of the above-mentioned embodiments, the pixel 201 arranged in the pixel region 104 of the semiconductor device 101 has been described as including a light-emitting element. However, as described above, a plurality of pixels 201 arranged in the pixel region 104 may include a photoelectric conversion element. The configuration in this case will be described with reference to Figs. 10 to 13. Descriptions of configurations that may be similar to the above-mentioned configurations will be omitted as appropriate.

[0057] 10 and 11 are a plan view and a cross-sectional view for explaining a pixel 201 including a photoelectric conversion element arranged in a pixel region 104 of a semiconductor device 101 of this embodiment. FIG. 10 shows a planar structure of a lens 212 of this embodiment in which there is no gap between two adjacent lenses 212. Specifically, FIG. 10 shows a part of the pixel region 104, and a plurality of pixels 201 are arranged in a two-dimensional array at a predetermined pitch in the pixel region 104. Furthermore, a plurality of lenses 212 are arranged on the underlayer 406 at a predetermined pitch so that one lens 212 corresponds to one pixel 201 and the underlayer 406 is not exposed. Each lens 212 is in contact with the adjacent lens 212, and there is no area where the underlayer 309 under the lens is exposed in the gap between the lenses 212 in a plan view. In the configuration shown in FIG. 10, the shape of the pixel 201 in a plan view is rectangular, but is not limited thereto, and may be a polygon such as a hexagon.

[0058] Fig. 11 is a cross-sectional view taken along the line F-F' in Fig. 10. In the configuration shown in Fig. 11, a pixel 201 disposed in a pixel region 104 may include a substrate 100, a structure 402, a protective layer 403, a planarization layer 404, a color filter layer 405, and an underlayer 406. A lens 212 is provided on the underlayer 406.

[0059] A photoelectric conversion element 407 is arranged in the pixel region 104 on the substrate 100. The photoelectric conversion element 407 generates a signal according to the amount of light incident on the photoelectric conversion element 407.

[0060] A structure 402 is disposed on the substrate 100. The structure 402 may include a conductor such as an insulating layer, a wiring pattern layer, or a contact plug. The structure 301 may have, for example, an insulating film containing silicon oxide or the like, or a wiring pattern containing copper, aluminum, or the like as a main component. The wiring pattern layer may be formed by stacking a plurality of layers.

[0061] A protective layer 403 is disposed on the structure 402. The protective layer 403 is disposed to suppress the diffusion of moisture from the outside of the semiconductor device 101 and impurities from the color filter layer 405, etc., into the structure 402 and the substrate 100. The protective layer 403 may be made of, for example, a silicon nitride nitride film.

[0062] A planarization layer 404 is disposed on the protective layer 403. The planarization layer 404 is a layer for planarizing the unevenness of the upper surface of the protective layer 403. As with the above-mentioned planarization layer 307, the planarization layer 404 may be made of, for example, an organic material. For example, the planarization layer 404 may be made of a resin that can be spin-coated. The planarization layer 404 may not be provided when the unevenness of the upper surface of the protective layer 403 is not large, or when the unevenness of the upper surface of the protective layer 403 can be planarized using a polishing process or the like.

[0063] A color filter layer 405 is disposed on the planarization layer 404. The color filter layer 405 may include a plurality of types of filters that transmit (or absorb) light in a specific frequency band. For example, the color filter layer 405 may be disposed such that one filter corresponds to each pixel 201 in the pixel region 104. The main configuration of the color filter layer 405 may be similar to that of the color filter layer 308.

[0064] The lens 202 is disposed on the color filter layer 405 via a base layer 406. The base layer 406 can be a planarizing layer that flattens the surface of the layer below the base layer 406 (for example, the upper surface of the color filter layer 405). The base layer 406 may be made of the same material as the planarizing layer 404. Furthermore, the base layer 406 may not be provided when the upper surface of the color filter layer 405 is not significantly uneven. In that case, the color filter layer 405 can function as a base layer for the lens 212.

[0065] In the lens 212, the upper surface of the underlayer 406 is set as a reference point, and the difference between the height of the reference point and the height of the apex of the lens 212 is defined as the height H7 of the lens 212. In the process control of the shape of the lens 212, the surface of the lens 212 is scanned using an AFM to measure the unevenness of the lens 212, as described above. In this case, even in the case shown in FIG. 11, the upper surface of the underlayer 406 cannot be set as the reference point because the underlayer 406 is not exposed on the surface to be measured. If the reference point for the height of the lens 212 when it is measured is a point Q that is a valley part of the adjacent lenses 212, the difference between the height of the point Q and the height of the apex of the lens 212 is H7' as shown in FIG. 11. In this case, H7 ≠ H7', and a value different from the actual height H7 of the lens 212 is measured.

[0066] Therefore, as in the above-described embodiments, a monitor region 106 is provided in the peripheral region 103 of the semiconductor device 101, and the shape of the monitor lens 222 is monitored, thereby performing process control of the shape of the lens 212. Figs. 12 and 13 are a plan view and a cross-sectional view explaining the monitor lens 222 disposed in the monitor region 106 of the semiconductor device 101 of this embodiment. Fig. 12 shows a part of the monitor region 106, and Fig. 13 is a cross-sectional view taken along the line G-G'-G'' shown in Fig. 12.

[0067] In the monitor area 106, a plurality of monitor lenses 222 are arranged on the base layer 406. The plurality of monitor lenses 222 include a pair of monitor lenses (e.g., a pair of monitor lenses 222a and 222b) arranged so that the base layer 406 is not exposed between two adjacent monitor lenses 222, and a pair of monitor lenses (e.g., a pair of monitor lenses 222a and 222c) arranged with an exposed portion 416 where the base layer 406 is exposed between two adjacent monitor lenses 222. That is, in a plan view, the plurality of monitor lenses 222 and the plurality of exposed portions 416 are two-dimensionally arranged in the monitor area 106. Also, in the monitor area 106, a part of the base layer 406 below the monitor lenses 222 is exposed.

[0068] In this embodiment, the height of the monitor lens 222 can be measured in the process control of the shape of the lens 212. The shape of the monitor lens 222 can be measured by, for example, using an AFM to scan the unevenness of the surface including the monitor lens 222 and the exposed portion 416 in the monitor region 106. In this case, unlike the lens 212 in the pixel region 104, the exposed portion 416 is provided, so that the exposed portion 416 can be used as a reference point for the height in the AFM measurement. The difference between the height of this reference point and the height of the top of the monitor lens 222 is the height H8 of the monitor lens 222 as shown in FIG. 13, and the height of the monitor lens 222 can be accurately measured.

[0069] In this way, even when the photoelectric conversion element 407 is disposed in the pixel 201 disposed in the pixel region 104 of the semiconductor device 101, it is possible to perform process control of the surface shape of the lens 212 with high accuracy. Furthermore, even when the photoelectric conversion element 407 is disposed in the pixel 201, the lens 212 and the monitor lens 222 can be formed in the same manner as when a light-emitting element is disposed in the pixel 201.

[0070] 12 and 13, the configuration from the structure 301 to the underlayer 309 shown in the above-mentioned Figures 4 and 5 is replaced with a configuration from the substrate 100 to the underlayer 406. However, this is not limited to this, and the arrangement and shape of the monitor lens 222 shown in the above-mentioned Figures 6 to 9 may be combined with the configuration from the substrate 100 to the underlayer 406 shown in Figures 10 to 13.

[0071] That is, when the lens 212 is arranged in the pixel region 104 of the semiconductor device 101, regardless of the configuration of the pixel 201, by arranging the above-mentioned monitor lens 222, it becomes possible to perform process control of the shape of the lens 212 with high precision. As a result, in the semiconductor device 101 in which a light-emitting element is arranged in the pixel region 104, for example, high definition of a displayed image is realized. Similarly, in the semiconductor device 101 in which a photoelectric conversion element is arranged in the pixel region 104, for example, high definition of an image obtained by imaging is realized.

[0072] Here, application examples of the semiconductor device 101 of this embodiment, in which the pixels 201 arranged in the pixel region 104 include light-emitting elements and function as a light-emitting device as described above, to an image forming device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described with reference to Figs. 14(a), 14(b) to 22(a), 22(b). As described above, the pixel 201 arranged in the pixel region 104 of the semiconductor device 101 is described as having a light-emitting element, for example, an organic light-emitting element such as an organic EL element. First, details of each component arranged in the pixel region 104 of the semiconductor device 101 will be shown, and then application examples will be described.

[0073] Structure of organic light-emitting device The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of acrylic resin or the like. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0074] substrate Examples of the substrate (corresponding to the above-mentioned substrate 100) include quartz, glass, silicon wafer, resin, and metal. Furthermore, the substrate may have switching elements such as transistors and wiring patterns, and an insulating layer thereon. The insulating layer may be made of any material as long as it allows contact holes to be formed so that a wiring pattern can be formed between the first electrode and the substrate, and insulation from wiring patterns that are not connected can be ensured. For example, the insulating layer may be made of a resin such as polyimide, silicon oxide, silicon nitride, or the like.

[0075] electrode A pair of electrodes (corresponding to the above-mentioned lower electrode 302 and upper electrode 305) can be used as the electrodes. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with the higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0076] A material having a large work function may be selected as the material for the anode. For example, a metal such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, or tungsten, a mixture containing these metals, or an alloy of these metals, or a metal oxide such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), or indium zinc oxide may be used. Also, a conductive polymer such as polyaniline, polypyrrole, or polythiophene may be used as the material for the anode.

[0077] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0078] When the electrode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or an alloy thereof, or a laminate of these may be used. The above materials may function as a reflective film without serving as an electrode. When a transparent electrode is used as the electrode, a transparent conductive layer of oxide such as indium tin oxide (ITO) or indium zinc oxide may be used, but is not limited to these. Photolithography technology may be used to form the electrode.

[0079] On the other hand, a material with a small work function may be selected as the material for the cathode. For example, an alkali metal such as lithium, an alkaline earth metal such as calcium, an aluminum, titanium, manganese, silver, lead, chromium, or a mixture containing these metals may be used. Alternatively, an alloy combining these metals may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, zinc-silver, or the like may be used. Metal oxides such as indium tin oxide (ITO) may also be used. One of these electrode materials may be used alone, or two or more may be used in combination. The cathode may have a single layer structure or a multilayer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce the aggregation of silver. As long as the aggregation of silver can be reduced, the ratio of the alloy is not important. For example, silver:other metal may be 1:1, 3:1, or the like.

[0080] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but when a direct current or alternating current sputtering method or the like is used, the coverage of the formed film is good and the resistance of the cathode can be reduced.

[0081] Pixel Isolation Layer The pixel separation layer (corresponding to the insulating layer 303 described above) may be formed of so-called silicon oxides such as silicon nitride (SiN), silicon oxynitride (SiON), and silicon oxide (SiO) formed by chemical vapor deposition (CVD). In order to increase the resistance in the in-plane direction of the organic compound layer, the thickness of the organic compound layer, particularly the hole transport layer, may be thinly formed on the sidewall of the pixel separation layer. Specifically, the thickness of the organic compound layer on the sidewall can be thinned by increasing the taper angle of the sidewall of the pixel separation layer or the thickness of the pixel separation layer to increase vignetting during deposition.

[0082] On the other hand, the sidewall taper angle and film thickness of the pixel separation layer can be adjusted to such an extent that no voids are formed in the protective layer formed thereon. By preventing voids from being formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration in reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0083] According to this embodiment, even if the taper angle of the sidewall of the pixel separation layer is not steep, it is possible to effectively suppress charge leakage to adjacent pixels. As a result of this study, it was found that the charge leakage can be sufficiently reduced if the taper angle is in the range of 60 degrees or more and 90 degrees or less. The thickness of the pixel separation layer may be 10 nm or more to 150 nm or less. The same effect can be obtained even if the pixel electrode is composed only of a pixel electrode without a pixel separation layer. However, in this case, the thickness of the pixel electrode is half or less than that of the organic layer, or the pixel electrode end is forward tapered to less than 60 degrees, thereby reducing short circuits in the organic light-emitting element.

[0084] In addition, even when the first electrode is a cathode and the second electrode is an anode, a wide color gamut and low-voltage operation are possible by forming an electron transport material and a charge transport layer, and also by forming a light-emitting layer on the charge transport layer.

[0085] organic compound layer The organic compound layer (corresponding to the above-mentioned organic layer 304) may be formed as a single layer or as multiple layers. When the organic compound layer has multiple layers, it may be called a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, or the like, depending on its function. The organic compound layer is mainly composed of an organic compound, but may contain inorganic atoms or inorganic compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0086] protective layer A protective layer (corresponding to the protective layer 306 described above) may be provided on the cathode. For example, by bonding glass provided with a moisture absorbent on the cathode, it is possible to reduce the intrusion of moisture and the like into the organic compound layer and reduce the occurrence of display defects. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the intrusion of moisture and the like into the organic compound layer. For example, after forming the cathode, the cathode may be transported to another chamber without breaking the vacuum, and silicon nitride having a thickness of 2 μm may be formed by a CVD method to form a protective layer. After forming the protective layer by the CVD method, a protective layer may be provided by an atomic deposition (ALD) method. The material of the protective layer by the ALD method is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by a CVD method on the protective layer formed by the ALD method. The protective layer formed by the ALD method may have a smaller thickness than the protective layer formed by the CVD method. Specifically, the thickness of the protective layer formed by the ALD method may be 50% or less, or even 10% or less, of the thickness of the protective layer formed by the CVD method.

[0087] Color Filters A color filter (corresponding to the above-mentioned color filter layer 308) may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate, and the substrate on which the color filter is formed may be bonded to the substrate on which the organic light-emitting element is provided. Also, for example, a color filter may be patterned on the above-mentioned protective layer using photolithography technology. The color filter may be made of a polymer.

[0088] planarization layer A planarization layer (corresponding to the planarization layer 307 described above) may be disposed between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing unevenness in the layers below the planarization layer. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, which may be either a low molecular weight or a high molecular weight. In consideration of reducing unevenness, a high molecular weight organic compound may be used for the planarization layer.

[0089] The planarization layers may be provided above and below the color filter (the planarization layer provided above the color filter corresponds to the above-mentioned base layer 309). In this case, the constituent materials of the planarization layers may be the same or different. Specifically, examples of the material for the planarization layer include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0090] Micro Lenses The organic light-emitting device may have an optical member such as a microlens (corresponding to the above-mentioned lenses 202 and 212) on the light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device and control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the tangent and the hemisphere are the vertices of the microlens. The vertex of the microlens can be determined in the same manner in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the tangent and the semicircle are the vertices (tops) of the microlens.

[0091] It is also possible to define the midpoint of the microlens. In the cross section of the microlens, a line segment is imaginary from a point where an arc shape ends to a point where another arc shape ends, and the midpoint of the line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0092] The microlens has a first surface having a convex portion and a second surface opposite to the first surface. The second surface can be disposed closer to the functional layer (light-emitting layer) than the first surface. To adopt such a configuration, it is necessary to form the microlens on the light-emitting device. When the functional layer is an organic layer, a process that becomes high temperature may be avoided in the manufacturing process of the microlens. In addition, when adopting a configuration in which the second surface is disposed closer to the functional layer than the first surface, the glass transition temperatures of all the organic compounds that constitute the organic layer may be 100°C or higher, and it is suitable that the glass transition temperatures are, for example, 130°C or higher.

[0093] Opposing substrate A counter substrate may be disposed on the planarization layer. The counter substrate is called a counter substrate because it is disposed at a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is the first substrate, the counter substrate may be the second substrate.

[0094] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting element according to an embodiment of the present disclosure may be formed by the method described below.

[0095] The organic compound layer constituting the organic light-emitting element according to the embodiment of the present disclosure can be formed by a dry process such as a vacuum deposition method, an ionization deposition method, a sputtering method, a plasma method, etc. Alternatively to the dry process, a wet process can be used in which a layer is formed by dissolving the compound in an appropriate solvent and applying a known coating method (e.g., spin coating, dipping, casting, the Langmuir-Blodgett (LB) method, an inkjet method, etc.).

[0096] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur, and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining with an appropriate binder resin.

[0097] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0098] These binder resins may be used alone as homopolymers or copolymers, or in combination of two or more. If necessary, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination.

[0099] Pixel circuit The light emitting device may have a pixel circuit connected to the light emitting element. The pixel circuit may be an active matrix type that controls the light emission of the first light emitting element and the second light emitting element independently. The active matrix type circuit may be a voltage programming circuit or a current programming circuit. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light emitting element, a transistor that controls the light emission luminance of the light emitting element, a transistor that controls the light emission timing, a capacitance that holds the gate voltage of the transistor that controls the light emission luminance, and a transistor for connecting to GND without going through the light emitting element.

[0100] The light-emitting device has a display region and a peripheral region disposed around the display region. The display region has a pixel circuit, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be smaller than the mobility of a transistor constituting the display control circuit.

[0101] The slope of the current-voltage characteristic of the transistor that constitutes the pixel circuit may be smaller than the slope of the current-voltage characteristic of the transistor that constitutes the display control circuit. The slope of the current-voltage characteristic can be measured by the so-called Vg-Ig characteristic.

[0102] The transistors that make up the pixel circuit are transistors that are connected to a light-emitting element, such as the first light-emitting element.

[0103] Pixels The organic light emitting device includes a plurality of pixels. Each pixel includes sub-pixels (corresponding to pixel 201 described above) that emit different colors. The sub-pixels may each emit, for example, RGB colors.

[0104] A pixel has an area that emits light, also called a pixel aperture. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0105] The spacing between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0106] The pixels may have a known arrangement in plan view. For example, they may be a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in plan view may be any known shape. For example, they may be a rectangle, a quadrangle such as a diamond, or a hexagon. Of course, if the shape is not an exact shape but is close to a rectangle, it is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0107] Uses of the organic light-emitting device according to the embodiment of the present disclosure The organic light-emitting device according to the embodiment of the present disclosure can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0108] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and displays the input image on the display unit.

[0109] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of the touch panel function may be an infrared type, a capacitance type, a resistive film type, or an electromagnetic induction type, and is not particularly limited. The display device may be used in the display unit of a multifunction printer.

[0110] Next, further explanation will be given with reference to the drawings. Fig. 14(a) is an example of a pixel which is a component of the pixel region 104 described above. The pixel has a sub-pixel 810 (corresponding to the pixel 201 described above). The sub-pixels are divided into 810R, 810G, and 810B according to their light emission. The emission colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted by a color filter or the like. Each subpixel has a first electrode, a reflective electrode 802 (corresponding to the above-mentioned lower electrode 302), on an interlayer insulating layer 801 (corresponding to a part of the structure 301), an insulating layer 803 (corresponding to the above-mentioned insulating layer 303) covering the edge of the reflective electrode 802, an organic compound layer 804 (corresponding to the above-mentioned organic layer 304) covering the first electrode and the insulating layer, a second electrode, a transparent electrode 805 (corresponding to the above-mentioned upper electrode 305), a protective layer 806 (corresponding to the above-mentioned protective layer 306 and planarization layer 307), and a color filter 807 (corresponding to the above-mentioned color filter layer 308).

[0111] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0112] The insulating layer 803 may be called a bank or a pixel separation film. The insulating layer 803 covers the edge of the first electrode and is disposed so as to surround the first electrode. The portion of the first electrode where the insulating layer 803 is not disposed contacts the organic compound layer 804 and becomes a light-emitting region.

[0113] The organic compound layer 804 has a hole injection layer 841 , a hole transport layer 842 , a first light emitting layer 843 , a second light emitting layer 844 , and an electron transport layer 845 .

[0114] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0115] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as being a single layer, it may be a multi-layer. Each layer may be an inorganic compound layer and an organic compound layer.

[0116] The color filters 807 are divided into 807R, 807G, and 807B according to their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be disposed on the color filters. The color filters may be formed on a protective layer 806. The color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0117] The display device 800 (corresponding to the above-mentioned semiconductor device 101) in FIG. 14(b) shows an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 such as glass or silicon is provided with an insulating layer 812 on the substrate. An active element such as a TFT 818 is provided on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are provided. The TFT 818 is also composed of a semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on the upper part of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and a source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0118] The method of electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Fig. 14(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0119] 14(b) shows the organic compound layer as one layer, the organic compound layer 822 may be a multi-layer structure. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0120] In the display device 800 of FIG. 14(b), transistors are used as switching elements, but other switching elements may be used instead.

[0121] The transistors used in the display device 800 of Fig. 14(b) are not limited to transistors using single crystal silicon wafers, but may be thin film transistors having an active layer on an insulating surface of a substrate. Examples of the active layer include single crystal silicon, amorphous silicon, non-single crystal silicon such as microcrystalline silicon, and non-single crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin film transistors are also called TFT elements.

[0122] The transistors included in the display device 800 of Fig. 14(b) may be formed in a substrate such as a silicon substrate. Here, "formed in a substrate" means that the substrate itself, such as a silicon substrate, is processed to produce the transistors. In other words, having a transistor in a substrate can be seen as the substrate and the transistor being integrally formed.

[0123] The organic light-emitting element according to this embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element, and by providing the organic light-emitting element on a plurality of surfaces, an image can be displayed based on the respective light emission brightnesses. Here, the switching element according to this embodiment is not limited to a TFT, and may be a transistor formed of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a silicon substrate. On a substrate may also be within the substrate. Whether to provide a transistor within the substrate or to use a TFT is selected according to the size of the display unit, and if the size is, for example, about 0.5 inches, the organic light-emitting element may be provided on a silicon substrate.

[0124] 15(a) to 15(c) are schematic diagrams showing an example of an image forming apparatus using the semiconductor device 101 of this embodiment. An image forming apparatus 926 shown in Fig. 15(a) includes a photoconductor 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transfer unit 932, a transport unit 933 (a transport roller in the configuration of Fig. 15(a)), and a fixing unit 935.

[0125] Light 929 is irradiated from an exposure light source 928, and an electrostatic latent image is formed on the surface of the photoconductor 927. The semiconductor device 101 can be applied to this exposure light source 928. The developing unit 931 contains toner or the like as a developer, and can function as a developing device that applies the developer to the exposed photoconductor 927. The charging unit 930 charges the photoconductor 927. The transfer unit 932 transfers the developed image to a recording medium 934. The transport unit 933 transports the recording medium 934. The recording medium 934 can be, for example, paper or film. The fixing unit 935 fixes the image formed on the recording medium.

[0126] 15(b) and 15(c) are schematic diagrams showing a state in which a plurality of light-emitting sections 936 are arranged on an elongated substrate along the longitudinal direction of an exposure light source 928. The semiconductor device 101 can be applied to the light-emitting section 936. That is, a plurality of pixels 201 arranged in the pixel region 104 are arranged along the longitudinal direction of the substrate. The direction 937 is parallel to the axis of the photoconductor 927. This column direction is the same as the axial direction of the photoconductor 927 when it rotates. This direction 937 can also be called the long axis direction of the photoconductor 927.

[0127] FIG. 15(b) shows a form in which the light-emitting units 936 are arranged along the long axis direction of the photoconductor 927. FIG. 15(c) shows a modified example of the arrangement of the light-emitting units 936 shown in FIG. 15(b), in which the light-emitting units 936 are arranged alternately in the column direction in the first and second columns. The light-emitting units 936 are arranged at different positions in the row direction in the first and second columns. In the first column, a plurality of light-emitting units 936 are arranged at intervals, and in the second column, the light-emitting units 936 are arranged at positions corresponding to the gaps between the light-emitting units 936 in the first column. In addition, a plurality of light-emitting units 936 are arranged at intervals in the row direction. The arrangement of the light-emitting units 936 shown in FIG. 15(c) can be rephrased as, for example, a state in which the light-emitting units 936 are arranged in a lattice pattern, a state in which the light-emitting units 936 are arranged in a staggered pattern, or a checkerboard pattern.

[0128] FIG. 16 is a schematic diagram showing an example of a display device using the semiconductor device 101 of this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPC1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. An active element such as a transistor is arranged on the circuit board 1007. The battery 1008 does not need to be arranged if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be arranged at this position. The semiconductor device 101 can be applied to the display panel 1005. The pixel 201 arranged in the pixel region 104 of the semiconductor device 101 functioning as the display panel 1005 is connected to an active element such as a transistor arranged on the circuit board 1007 and operates.

[0129] The display device 1000 shown in Fig. 16 may be used as a display unit of a photoelectric conversion device (which may also be called an imaging device) having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device, or may be a display unit disposed within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0130] FIG. 17 is a schematic diagram showing an example of a photoelectric conversion device using the semiconductor device 101 of this embodiment. The photoelectric conversion device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The semiconductor device 101 of this embodiment can be applied to the viewfinder 1101 and the rear display 1102, which are display units. In this case, the pixel region 104 of the semiconductor device 101 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, and the possibility that the subject will be blocked by an obstruction.

[0131] Since the timing suitable for capturing an image is often short, it is better to display information as soon as possible. Therefore, a semiconductor device 101 in which pixels 201 including light-emitting elements using an organic light-emitting material such as an organic EL element are arranged in a pixel region 104 may be used in a viewfinder 1101 or a rear display 1102. This is because organic light-emitting materials have a fast response speed. A semiconductor device 101 using an organic light-emitting material is more suitable than a liquid crystal display device for these devices, which require a high display speed.

[0132] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has a plurality of lenses, and forms an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focal points of the plurality of lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0133] The semiconductor device 101 may be applied to a display unit of an electronic device. In this case, the semiconductor device 101 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0134] FIG. 18 is a schematic diagram showing an example of an electronic device using the semiconductor device 101 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint and performs unlocking or the like. A portable device having a communication unit can also be called a communication device. The semiconductor device 101 of this embodiment can be applied to the display unit 1201.

[0135] 19(a) and 19(b) are schematic diagrams showing an example of a display device using the semiconductor device 101 of this embodiment. FIG. 19(a) shows a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The semiconductor device 101 of this embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 19(a). For example, the lower side of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0136] FIG. 19(b) is a schematic diagram showing another example of a display device using the semiconductor device 101 of this embodiment. The display device 1310 of FIG. 19(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The semiconductor device 101 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be one display unit without a joint. The first display unit 1311 and the second display unit 1312 can be separated at the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit may display one image.

[0137] FIG. 20 is a schematic diagram showing an example of a lighting device using the semiconductor device 101 of this embodiment. The lighting device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405. The semiconductor device 101 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion section 1405 can effectively diffuse the light of the light source, such as for lighting up, and deliver the light to a wide range. If necessary, a cover may be provided on the outermost part. The lighting device 1400 may have both the optical film 1404 and the light diffusion section 1405, or only one of them.

[0138] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white light, daylight white light, or any other color from blue to red. It may have a dimming circuit that dims the light. The lighting device 1400 may have a power supply circuit connected to the pixel region 104 of the semiconductor device 101 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage to DC voltage. Moreover, white has a color temperature of 4200K, and daylight white has a color temperature of 5000K. Moreover, the lighting device 1400 may have a color filter. Moreover, the lighting device 1400 may have a heat dissipation unit. The heat dissipation unit dissipates heat inside the device to the outside of the device, and examples of the heat dissipation unit include metals with high specific heat and liquid silicon.

[0139] FIG. 21 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the semiconductor device 101 of this embodiment. The automobile 1500 may have a tail lamp 1501, and may be configured to turn on the tail lamp 1501 when braking or the like is performed. The semiconductor device 101 of this embodiment may be used as a head lamp as a vehicle lamp. An automobile is an example of a moving body, and the moving body may be a ship, a drone, an aircraft, a railroad car, an industrial robot, or the like. The moving body may have a machine body and a lamp provided thereon. The lamp may indicate the current position of the machine body.

[0140] The semiconductor device 101 of this embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the semiconductor device 101 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, and may be made of polycarbonate or the like. The protective member may be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0141] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. The semiconductor device 101 of this embodiment may be used for the transparent display. In this case, the constituent materials of the electrodes and the like of the semiconductor device 101 are made of transparent materials.

[0142] 22(a) and 22(b), a further application example of the semiconductor device 101 of the present embodiment will be described. The semiconductor device 101 can be applied to a system that can be worn as a wearable device, such as smart glasses, a head mounted display (HMD), or a smart contact lens. An image capturing and displaying device used in such an application example has an image capturing device capable of photoelectrically converting visible light, and a light emitting device capable of emitting visible light.

[0143] 22(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, the semiconductor device 101 of this embodiment is provided on the back side of the lens 1601.

[0144] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the imaging device 1602 and the semiconductor device 101 according to each embodiment. The control device 1603 also controls the operations of the imaging device 1602 and the semiconductor device 101. The lens 1601 is formed with an optical system for focusing light on the imaging device 1602.

[0145] FIG. 22(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and the control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a semiconductor device 101. The lens 1611 is formed with an imaging device in the control device 1612 and an optical system for projecting light emitted from the semiconductor device 101, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the imaging device and the semiconductor device 101, and controls the operation of the imaging device and the semiconductor device 101. The control device 1612 may have a line of sight detection unit that detects the line of sight of the wearer. Infrared light may be used to detect the line of sight. The infrared light emission unit emits infrared light toward the eyeball of a user gazing at a display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction unit that reduces the amount of light from the infrared light emitting unit to the display unit in a plan view, degradation of image quality is reduced.

[0146] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0147] More specifically, a gaze detection process based on the pupil-corneal reflex method is performed. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0148] The semiconductor device 101 according to the embodiment of the present disclosure may have an imaging device having a light receiving element, and may control a display image based on user's line of sight information from the imaging device.

[0149] Specifically, the semiconductor device 101 determines a first field of view area to which the user gazes and a second field of view area other than the first field of view area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the semiconductor device 101, or may be received from an external control device. In the display area of ​​the semiconductor device 101, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0150] The display area includes a first display area and a second display area different from the first display area, and an area having a high priority is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the semiconductor device 101, or may be determined by an external control device and received. The resolution of the area having a high priority may be controlled to be higher than the resolution of areas other than the area having a high priority. In other words, the resolution of an area having a relatively low priority may be lowered.

[0151] AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from an image of the eyeball, using an image of the eyeball and the direction in which the eyeball in the image was actually looking as teacher data. The AI ​​program may be included in the semiconductor device 101, the imaging device, or an external device. If included in an external device, it is transmitted to the semiconductor device 101 via communication.

[0152] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0153] The disclosure of this specification includes the following semiconductor device, display device, photoelectric conversion device, electronic device, lighting device, mobile object, wearable device, and method for manufacturing a semiconductor device.

[0154] (Item 1) A semiconductor device including a pixel region in which a plurality of pixels are arranged on a substrate, and a monitor region, a plurality of lenses are disposed on the base layer in the pixel region so as not to expose the base layer; a plurality of monitor lenses are disposed on the base layer in the monitor area; The semiconductor device is characterized in that the plurality of monitor lenses include a monitor lens pair arranged so that the base layer is not exposed between two adjacent monitor lenses, and a monitor lens pair in which an exposed portion where the base layer is exposed is arranged between two adjacent monitor lenses.

[0155] (Item 2) the lenses in the pixel region are arranged at a predetermined pitch; The semiconductor device described in item 1, characterized in that the interval between two adjacent monitor lenses among the plurality of monitor lenses, which are arranged so as not to expose the base layer, is the same as the predetermined pitch.

[0156] (Item 3) 3. The semiconductor device according to item 2, wherein the interval at which two of the plurality of monitor lenses adjacent to each other via the exposed portion are arranged is wider than the predetermined pitch.

[0157] (Item 4) 3. The semiconductor device according to item 2, wherein the interval at which two adjacent monitor lenses among the plurality of monitor lenses are arranged with the exposed portion interposed therebetween is the same as the predetermined pitch.

[0158] (Item 5) two monitor lenses adjacent to each other via the exposed portion among the plurality of monitor lenses include a first monitor lens in contact with any one of the plurality of monitor lenses, and a second monitor lens not in contact with any other monitor lens among the plurality of monitor lenses; The semiconductor device described in item 4, wherein the diameter of the second monitor lens is smaller than the diameters of two adjacent monitor lenses among the plurality of monitor lenses that are arranged so as not to expose the base layer in a planar view.

[0159] (Item 6) 6. The semiconductor device according to item 5, wherein the second monitor lens is higher from the base layer than the first monitor lens.

[0160] (Item 7) 7. The semiconductor device according to item 5 or 6, wherein the second monitor lens has a flatter top than the first monitor lens.

[0161] (Item 8) a resin layer having a flat top and not in contact with the plurality of monitor lenses is disposed in the monitor region; 8. The semiconductor device according to claim 1, wherein the resin layer is made of the same material as the lenses.

[0162] (Item 9) 9. The semiconductor device according to any one of items 1 to 8, wherein the plurality of monitor lenses include a monitor lens that is not in contact with the exposed portion.

[0163] (Item 10) The pixel region further includes a dummy pixel region in which a dummy pixel is disposed on the substrate so as to be adjacent to the pixel region, 10. The semiconductor device according to any one of items 1 to 9, wherein the monitor region is disposed in the dummy pixel region.

[0164] (Item 11) 11. The semiconductor device according to any one of items 1 to 10, wherein a color filter layer is disposed between the substrate and the plurality of monitor lenses.

[0165] (Item 12) Item 12. The semiconductor device according to item 11, wherein the underlayer includes the color filter layer.

[0166] (Item 13) 12. The semiconductor device according to any one of items 1 to 11, wherein the underlayer includes a planarization layer for planarizing a surface of a layer below the underlayer.

[0167] (Item 14) 14. The semiconductor device according to any one of items 1 to 13, wherein at least a portion of the plurality of pixels includes a photoelectric conversion element.

[0168] (Item 15) 14. The semiconductor device according to any one of items 1 to 13, wherein at least a portion of the plurality of pixels includes a light emitting element.

[0169] (Item 16) 16. A display device comprising: the semiconductor device according to item 15; and an active element connected to the semiconductor device.

[0170] (Item 17) The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, Item 16. A photoelectric conversion device, comprising: the display unit for displaying an image captured by the imaging element; and the semiconductor device according to item 15.

[0171] (Item 18) A display device having a housing and a communication unit provided in the housing for communicating with an external device, 16. An electronic device, wherein the display unit comprises the semiconductor device according to item 15.

[0172] (Item 19) A lighting device having a light source and at least one of a light diffusion unit and an optical film, Item 16. A lighting device, wherein the light source has the semiconductor device according to item 15.

[0173] (Item 20) A moving body having a body and a lighting device provided on the body, The lighting device is a moving object having the semiconductor device according to item 15.

[0174] (Item 20) A wearable device having a display device for displaying an image, A wearable device characterized in that the display device has the semiconductor device described in item 15.

[0175] (Item 22) A method for manufacturing a semiconductor device including a pixel region in which a plurality of pixels are arranged on a substrate, and a monitor region, comprising the steps of: a plurality of lenses are disposed on a base layer in the pixel region so as not to expose the base layer; a plurality of monitor lenses are disposed on the base layer in the monitor area; The manufacturing method includes a step of forming the plurality of monitor lenses, a mask pattern for forming the plurality of monitor lenses includes the same mask pattern as a mask pattern for forming the plurality of lenses, A manufacturing method characterized in that the multiple monitor lenses include a pair of monitor lenses arranged so that the base layer is not exposed between two adjacent monitor lenses, and a pair of monitor lenses in which an exposed portion where the base layer is exposed is arranged between two adjacent monitor lenses.

[0176] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0177] 100: substrate, 104: pixel region, 106: monitor region, 201: pixel, 212: lens, 222: monitor lens, 309: underlayer, 319: exposed portion

Claims

1. A semiconductor device including a pixel region in which a plurality of pixels are arranged on a substrate, and a monitor region, a plurality of lenses are disposed on the base layer in the pixel region so as not to expose the base layer; a plurality of monitor lenses are disposed on the base layer in the monitor area; the plurality of monitor lenses include a monitor lens pair arranged such that the base layer is not exposed between two adjacent monitor lenses, and a monitor lens pair in which an exposed portion where the base layer is exposed is arranged between two adjacent monitor lenses, the plurality of lenses include a first lens, a second lens, a third lens, and a fourth lens arranged adjacent to one another; 13. A semiconductor device comprising: a semiconductor device including: a first lens, a second lens, a third lens, and a fourth lens; a first base layer that is not exposed in a portion surrounded by the first lens, the second lens, the third lens, and the fourth lens;

2. the lenses in the pixel region are arranged at a predetermined pitch; 2. The semiconductor device according to claim 1, wherein the interval between two adjacent monitor lenses among the plurality of monitor lenses so that the base layer is not exposed is the same as the predetermined pitch.

3. 3. The semiconductor device according to claim 2, wherein an interval between two adjacent monitor lenses across the exposed portion among the plurality of monitor lenses is wider than the predetermined pitch.

4. 3. The semiconductor device according to claim 2, wherein the interval at which two adjacent monitor lenses of the plurality of monitor lenses are arranged with the exposed portion interposed therebetween is the same as the predetermined pitch.

5. two monitor lenses adjacent to each other via the exposed portion among the plurality of monitor lenses include a first monitor lens in contact with any one of the plurality of monitor lenses, and a second monitor lens not in contact with any other monitor lens among the plurality of monitor lenses; 5. The semiconductor device according to claim 4, wherein the diameter of the second monitor lens is smaller than the diameters of two adjacent monitor lenses among the plurality of monitor lenses that are arranged so as not to expose the base layer, in a planar view.

6. 6. The semiconductor device according to claim 5, wherein the second monitor lens is higher from the base layer than the first monitor lens.

7. 6. The semiconductor device according to claim 5, wherein the second monitor lens has a flatter top than the first monitor lens.

8. a resin layer having a flat top and not in contact with the plurality of monitor lenses is disposed in the monitor region; 2. The semiconductor device according to claim 1, wherein the resin layer is made of the same material as the lenses.

9. 2. The semiconductor device according to claim 1, wherein the plurality of monitor lenses include a monitor lens that is not in contact with the exposed portion.

10. The pixel region further includes a dummy pixel region in which a dummy pixel is disposed on the substrate so as to be adjacent to the pixel region, 2. The semiconductor device according to claim 1, wherein the monitor region is disposed in the dummy pixel region.

11. 2. The semiconductor device according to claim 1, further comprising a color filter layer disposed between said substrate and said plurality of monitor lenses.

12. The semiconductor device according to claim 11 , wherein the underlayer includes the color filter layer.

13. 2. The semiconductor device according to claim 1, wherein the underlayer includes a planarization layer for planarizing a surface of a layer below the underlayer.

14. A semiconductor device including a pixel region in which a plurality of pixels are arranged on a substrate, and a monitor region, a plurality of lenses are disposed on the base layer in the pixel region so as not to expose the base layer; a plurality of monitor lenses are disposed on the base layer in the monitor area; the plurality of monitor lenses include a monitor lens pair arranged such that the base layer is not exposed between two adjacent monitor lenses, and a monitor lens pair in which an exposed portion where the base layer is exposed is arranged between two adjacent monitor lenses, the plurality of monitor lenses include a first monitor lens, and a second monitor lens, a third monitor lens, a fourth monitor lens, and a fifth monitor lens arranged so as to surround the first monitor lens; a second monitor lens, a third monitor lens, a fourth monitor lens, and a fifth monitor lens, the second monitor lens, the third monitor lens, and the ...;

15. The plurality of lenses in the pixel region are arranged at a predetermined pitch, 15. The semiconductor device according to claim 14, wherein the interval between two adjacent monitor lenses among the plurality of monitor lenses so that the base layer is not exposed is the same as the predetermined pitch.

16. A semiconductor device as described in Claim 15, characterized in that the spacing between two adjacent monitor lenses among the plurality of monitor lenses via the exposed portion is wider than the specified pitch.

17. A semiconductor device as described in Claim 15, characterized in that the spacing between two adjacent monitor lenses among the plurality of monitor lenses via the exposed portion is the same as the specified pitch.

18. Two monitor lenses among the plurality of monitor lenses that are adjacent to each other via the exposed portions include a sixth monitor lens that contacts any one of the plurality of monitor lenses, and a seventh monitor lens that is not in contact with any other monitor lens among the plurality of monitor lenses, 18. The semiconductor device according to claim 17, wherein the diameter of the seventh monitor lens is smaller than the diameters of two adjacent monitor lenses among the plurality of monitor lenses that are arranged so as not to expose the base layer, in a planar view.

19. The semiconductor device described in Claim 18, characterized in that the seventh monitor lens has a height from the base layer greater than that of the sixth monitor lens.

20. The semiconductor device according to claim 18, wherein the seventh monitor lens has a flatter top than the sixth monitor lens.

21. A resin layer having a flat top and not in contact with the plurality of monitor lenses is disposed in the monitor region; 15. The semiconductor device according to claim 14, wherein the resin layer is made of the same material as the plurality of lenses.

22. The pixel region further includes a dummy pixel region in which a dummy pixel is arranged on the substrate adjacent to the pixel region, 15. The semiconductor device according to claim 14, wherein the monitor region is disposed in the dummy pixel region.

23. A semiconductor device described in any one of claims 1 to 22, characterized in that in the pixel region, the base layer is not exposed between two adjacent lenses among the plurality of lenses.

24. A semiconductor device described in any one of claims 1 to 22, characterized in that in the pixel region, the base layer is not exposed between the multiple lenses.

25. 23. The semiconductor device according to claim 1, wherein at least a part of the plurality of pixels includes a photoelectric conversion element.

26. 23. The semiconductor device according to claim 1, wherein at least a part of the plurality of pixels includes a light emitting element.

27. 27. A display device comprising: the semiconductor device according to claim 26; and an active element connected to the semiconductor device.

28. The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, 27. A photoelectric conversion device, comprising: said display section for displaying an image captured by said imaging element; and said display section comprising the semiconductor device according to claim 26.

29. A display device having a housing and a communication unit provided in the housing for communicating with an external device, 27. An electronic device, wherein the display section comprises the semiconductor device according to claim 26.

30. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 27. An illumination device, wherein the light source comprises the semiconductor device according to claim 26.

31. A moving body having a body and a lighting device provided on the body, 27. A moving object, wherein the lighting device comprises the semiconductor device according to claim 26.

32. A wearable device having a display device for displaying an image, 27. A wearable device, wherein the display device comprises the semiconductor device according to claim 26.

33. A method for manufacturing a semiconductor device including a pixel region in which a plurality of pixels are arranged on a substrate, and a monitor region, comprising the steps of: a plurality of lenses are disposed on a base layer in the pixel region so as not to expose the base layer; a plurality of monitor lenses are disposed on the base layer in the monitor area; The manufacturing method includes a step of forming the plurality of monitor lenses, a mask pattern for forming the plurality of monitor lenses includes the same mask pattern as a mask pattern for forming the plurality of lenses, the plurality of monitor lenses include a monitor lens pair arranged such that the base layer is not exposed between two adjacent monitor lenses, and a monitor lens pair in which an exposed portion where the base layer is exposed is arranged between two adjacent monitor lenses, the plurality of lenses include a first lens, a second lens, a third lens, and a fourth lens arranged adjacent to one another; The manufacturing method, characterized in that the base layer is not exposed in a portion surrounded by the first lens, the second lens, the third lens, and the fourth lens.

34. A method for manufacturing a semiconductor device including a pixel region in which a plurality of pixels are arranged on a substrate, and a monitor region, comprising: a plurality of lenses are disposed on a base layer in the pixel region so as not to expose the base layer; a plurality of monitor lenses are disposed on the base layer in the monitor area; The manufacturing method includes a step of forming the plurality of monitor lenses, a mask pattern for forming the plurality of monitor lenses includes the same mask pattern as a mask pattern for forming the plurality of lenses, the plurality of monitor lenses include a monitor lens pair arranged such that the base layer is not exposed between two adjacent monitor lenses, and a monitor lens pair in which an exposed portion where the base layer is exposed is arranged between two adjacent monitor lenses, the plurality of monitor lenses include a first monitor lens, and a second monitor lens, a third monitor lens, a fourth monitor lens, and a fifth monitor lens arranged so as to surround the first monitor lens; a second monitor lens arranged on a first surface of the second substrate and a fifth monitor lens arranged on a second surface of the second substrate;

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