Peeling device

Abstract

To provide a peeling device capable of efficiently peeling a wafer from an ingot on which a peeling layer is formed while suppressing enlargement of the device size.SOLUTION: A peeling device 40 includes an ingot holding unit 41 that holds an SiC ingot 1 with a wafer 20 to be generated facing upward, an ultrasonic wave oscillation unit 60 arranged to face the SiC ingot 1 held by the ingot holding unit 41 and oscillating ultrasonic waves, and a liquid supply unit 50 that supplies a liquid 51 between the wafer 20 to be generated and the ultrasonic oscillation unit 60, and the ultrasonic oscillation unit 60 includes an ultrasonic transducer, and a case member 61 having a bottom surface 64 formed to have an area equal to or greater than the area to which ultrasonic waves are to be applied, and the case member 61 is formed integrally with the end surface of the ultrasonic transducer.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present invention relates to a peeling device. [Background technology]

[0002] Wafers on which devices are formed are generally produced by thinly slicing a cylindrical ingot with a wire saw, and polishing the front and back surfaces of the wafer after slicing.

[0003] However, when wafers are produced by the above-mentioned method, a large part of the ingot (70% to 80% of the volume) is lost due to removal, which is uneconomical.

[0004] In particular, ingots made of SiC (SiC ingots), which have been attracting attention in recent years as a power device, have a high hardness and are difficult to cut with a wire saw, which means that cutting takes a long time and productivity is low.

[0005] Therefore, the applicants have proposed a technology in which a laser beam having a wavelength that is transparent to a single crystal SiC ingot is focused and irradiated to the inside of the SiC ingot, thereby forming a delamination layer on the surface to be cut, and a technology in which ultrasonic waves are applied to the SiC ingot on which the delamination layer has been formed, thereby separating and generating wafers from the delamination layer (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2016-111143 A [Patent Document 2] JP 2019-102513 A Summary of the Invention [Problem to be solved by the invention]

[0007] In order to apply ultrasonic waves to a SiC ingot, an ultrasonic wave applying means is required that has an end face with an area equal to or larger than the area to be irradiated with ultrasonic waves. Therefore, currently, an end face with the desired area is formed by bonding a vibration plate to an ultrasonic vibrator.

[0008] However, it became clear that the adhesive that bonds the ultrasonic transducer to the vibration plate peels off over long periods of use, causing fluctuations in characteristics and making it impossible to produce wafers efficiently.

[0009] The present invention has been made in consideration of the above-mentioned circumstances, and an object of the present invention is to provide a delamination apparatus that can efficiently produce wafers from an ingot while suppressing characteristic variations. [Means for solving the problem]

[0010] In order to solve the above problems and achieve the object, the delamination apparatus of the present invention is a delamination apparatus that delaminates a wafer to be produced from an ingot on which a delamination layer has been formed by irradiating a laser beam having a wavelength that is transparent to the ingot with the focal point positioned at a depth corresponding to the thickness of the wafer to be produced, and includes an ingot holding unit that holds the ingot with the wafer to be produced facing up, an ultrasonic oscillation unit that is disposed so as to face the ingot held in the ingot holding unit and that oscillates ultrasonic waves, and a liquid supply unit that supplies liquid between the wafer to be produced and the ultrasonic oscillation unit, the ultrasonic oscillation unit including an ultrasonic vibrator and a case member having a bottom surface formed to have an area equal to or greater than an area to which ultrasonic waves are to be applied, The case member has a plate-shaped bottom surface portion having the bottom surface, and the bottom surface portion is integrated with a metal block that is fixed to the piezoelectric element of the ultrasonic transducer by a bolt, The case member is characterized in that it is formed integrally with the end face of the ultrasonic transducer.

[0011] In the above-described peeling device, the case member may include any one of stainless steel, titanium, and aluminum. Effect of the Invention

[0012] The present invention has an effect of making it possible to efficiently produce wafers from an ingot while suppressing fluctuations in characteristics. [Brief description of the drawings]

[0013] [Figure 1] FIG. 1 is a plan view of a SiC ingot to be processed by the peeling apparatus according to the first embodiment. [Diagram 2] FIG. 2 is a side view of the SiC ingot shown in FIG. [Diagram 3] FIG. 3 is a perspective view of a wafer manufactured by the delamination apparatus according to the first embodiment. [Figure 4] FIG. 4 is a plan view of the SiC ingot shown in FIG. 1 in a state where a peeling layer is formed. [Diagram 5] FIG. 5 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 6 is a perspective view showing a state in which a peeling layer is formed on the SiC ingot shown in FIG. [Figure 7] FIG. 7 is a side view showing a state in which a peeling layer is formed on the SiC ingot shown in FIG. [Figure 8] FIG. 8 is a side view showing an example of the configuration of the peeling device according to the first embodiment. [Figure 9] FIG. 9 is a side cross-sectional view of the ultrasonic oscillation unit of the delamination apparatus shown in FIG. [Figure 10] FIG. 10 is a side view showing an example of the configuration of a peeling device according to the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiment. Furthermore, the components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the configurations described below can be appropriately combined. Furthermore, various omissions, substitutions, or modifications of the configurations can be made without departing from the gist of the present invention.

[0015] [Embodiment 1] A delamination apparatus according to a first embodiment of the present invention will be described with reference to the drawings. First, a SiC ingot, which is an ingot to be processed by the delamination apparatus according to the first embodiment, will be described. FIG. 1 is a plan view of the SiC ingot to be processed by the delamination apparatus according to the first embodiment. FIG. 2 is a side view of the SiC ingot shown in FIG. 1. FIG. 3 is a perspective view of a wafer manufactured by the delamination apparatus according to the first embodiment. FIG. 4 is a plan view of a state in which a delamination layer is formed on the SiC ingot shown in FIG. 1. FIG. 5 is a cross-sectional view taken along the line VV in FIG. 4. FIG. 6 is a perspective view showing a state in which a delamination layer is formed on the SiC ingot shown in FIG. 1. FIG. 7 is a side view showing a state in which a delamination layer is formed on the SiC ingot shown in FIG. 6.

[0016] (SiC ingot) 1 and 2 is made of SiC (silicon carbide) and is formed into a cylindrical shape as a whole in the first embodiment. In the first embodiment, the SiC ingot 1 is a hexagonal single crystal SiC ingot.

[0017] 1 and 2, the SiC ingot 1 has a first surface 2 which is a circular end face, a circular second surface 3 on the reverse side of the first surface 2, and a peripheral surface 4 which is continuous with the outer edge of the first surface 2 and the outer edge of the second surface 3. The SiC ingot 1 also has a first orientation flat 5 which indicates a crystal orientation on the peripheral surface 4, and a second orientation flat 6 which is perpendicular to the first orientation flat 5. The length of the first orientation flat 5 is longer than the length of the second orientation flat 6.

[0018] The SiC ingot 1 has a c-axis 9 inclined at an off angle α in an inclination direction 8 toward the second orientation flat 6 with respect to a perpendicular line 7 of the first surface 2, and a c-plane 10 perpendicular to the c-axis 9. The c-plane 10 is inclined at an off angle α with respect to the first surface 2 of the SiC ingot 1. The inclination direction 8 of the c-axis 9 from the perpendicular line 7 is perpendicular to the extension direction of the second orientation flat 6 and is parallel to the first orientation flat 5. The c-planes 10 are set in the SiC ingot 1 at the molecular level of the SiC ingot 1. In the first embodiment, the off angle α is set to 1°, 4°, or 6°, but in the present invention, the off angle α can be freely set within a range of, for example, 1° to 6° to manufacture the SiC ingot 1.

[0019] Moreover, the first surface 2 of the SiC ingot 1 is ground by a grinding device, and then polished by a polishing device to form the first surface 2 into a mirror surface. A portion of the SiC ingot 1 on the first surface 2 side is peeled off, and the peeled portion is generated into a wafer 20 shown in FIG.

[0020] The wafer 20 shown in FIG. 3 is manufactured by peeling off a portion of the SiC ingot 1 and performing grinding, polishing, and the like on the surface 21 peeled off from the SiC ingot 1. After the wafer 20 is peeled off from the SiC ingot 1, a device is formed on the surface. In the first embodiment, the device is a MOSFET (Metal-oxide-semiconductor Field-effect Transistor), a MEMS (Micro Electro Mechanical Systems), or an SBD (Schottky Barrier Diode), but in the present invention, the device is not limited to a MOSFET, a MEMS, or an SBD. Note that the same parts of the wafer 20 as those of the SiC ingot 1 are denoted by the same reference numerals and description thereof will be omitted.

[0021] After the delamination layer 23 shown in Fig. 4 and Fig. 5 is formed on the SiC ingot 1 shown in Fig. 1 and Fig. 2, a part of the SiC ingot 1, i.e., the wafer 20 to be produced, is separated and delaminated starting from the delamination layer 23. The delamination layer 23 is formed by the laser processing device 30 (shown in Fig. 6 and Fig. 7) with the second surface 3 side of the SiC ingot 1 held by suction on a holding table 31 of the laser processing device 30. The laser processing device 30 positions a focal point 33 of a pulsed laser beam 32 (shown in Fig. 7) having a wavelength that is transparent to the SiC ingot 1 at a depth 35 (shown in Fig. 5 and Fig. 7) corresponding to the thickness 22 (shown in Fig. 3) of the wafer 20 to be produced from the first surface 2 of the SiC ingot 1, and irradiates the pulsed laser beam 32 along the second orientation flat 6 to form the delamination layer 23 inside the SiC ingot 1.

[0022] When the SiC ingot 1 is irradiated with a pulsed laser beam 32 having a wavelength that is transparent to the SiC ingot 1, as shown in Fig. 5, the SiC is separated into Si (silicon) and C (carbon) by the irradiation of the pulsed laser beam 32, and the next irradiated pulsed laser beam 32 is absorbed by the previously formed C, and the SiC is separated into Si and C in a chain reaction, forming a modified portion 24 inside the SiC ingot 1 along the X-axis direction, and a crack 25 extending from the modified portion 24 along the c-plane 10 is generated. In this way, when the SiC ingot 1 is irradiated with a pulsed laser beam 32 having a wavelength that is transparent to the SiC ingot 1, a peeling layer 23 including the modified portion 24 and the crack 25 formed from the modified portion 24 along the c-plane 10 is formed.

[0023] When forming the peeling layer 23, the laser processing apparatus 30 irradiates the laser beam 32 along the entire length of the SiC ingot 1 in a direction parallel to the second orientation flat 6, and then indexes the SiC ingot 1 and the laser beam irradiation unit 36 ​​that irradiates the laser beam 32 relatively along the first orientation flat 5.

[0024] The laser processing device 30 again positions the focal point 33 at the desired depth from the first surface 2, and irradiates the SiC ingot 1 with the pulsed laser beam 32 along the second orientation flat 6 to form a peeling layer 23 inside the SiC ingot 1. The laser processing device 30 repeats the operation of irradiating the laser beam 32 along the second orientation flat 6 and the operation of relatively indexing the laser beam irradiation unit along the first orientation flat 5.

[0025] As a result, in the SiC ingot 1, a peeled layer 23 having a lower strength than other parts including modified parts 24 where SiC is separated into Si and C and cracks 25 is formed at a depth 35 corresponding to the thickness 22 of the wafer 20 from the first surface 2 for each index feed movement distance 26. In the SiC ingot 1, a peeled layer 23 is formed at a depth 35 corresponding to the thickness 22 of the wafer 20 from the first surface 2 over the entire length in the direction parallel to the first orientation flat 5 for each index feed movement distance.

[0026] (Peeling device) Next, the delamination apparatus will be described. Fig. 8 is a side view showing a configuration example of the delamination apparatus according to the first embodiment. Fig. 9 is a side cross-sectional view of an ultrasonic oscillation unit of the delamination apparatus shown in Fig. 8. The delamination apparatus 40 according to the first embodiment is a delamination apparatus that delaminates the wafer 20 to be produced shown in Fig. 4 from the SiC ingot 1 on which the delamination layer 23 shown in Figs. 4 and 5 is formed.

[0027] The delamination apparatus 40 is an apparatus for delaminating the wafer 20 to be produced from the SiC ingot 1 on which a delamination layer 23 has been formed by irradiating the SiC ingot 1 with a laser beam 32, with a focal point 33 of the laser beam 32 having a wavelength that is transparent to the SiC ingot 1 positioned at a depth 35 corresponding to the thickness 22 of the wafer 20 to be produced. As shown in FIG. 8 , the delamination apparatus 40 includes an ingot holding unit 41, a liquid supply unit 50, an ultrasonic oscillation unit 60, and a control unit 100.

[0028] The ingot holding unit 41 holds the SiC ingot 1 with the wafer 20 to be produced facing up. The ingot holding unit 41 is formed in a thick disk shape. The upper surface of the ingot holding unit 41 is a holding surface 42 parallel to the horizontal direction, and the second surface 3 of the SiC ingot 1 is placed on the holding surface 42 to hold the SiC ingot 1 with the first surface 2 facing upward. In the first embodiment, the ingot holding unit 41 suction-holds the second surface 3 of the SiC ingot 1 on the holding surface 42 (i.e., vacuum-fixes it). The ingot holding unit 41 is rotated around its axis by the rotary drive source 43 while holding the SiC ingot 1 on the holding surface 42.

[0029] The liquid supply unit 50 supplies liquid 51 (shown in FIG. 8) between the wafer 20 to be produced and the ultrasonic oscillation unit 60. The liquid supply unit 50 is a pipe that supplies liquid 51 from a liquid supply source from the lower end, and in the first embodiment, supplies liquid 51 onto the first surface 2 of the SiC ingot 1 held by the ingot holding unit 41. In the first embodiment, the liquid supply unit 50 is provided so as to be freely raised and lowered by a lifting mechanism (not shown).

[0030] The ultrasonic oscillation unit 60 is disposed so as to face the SiC ingot 1 held by the ingot holding unit 41, and oscillates ultrasonic waves. As shown in FIG. 9, the ultrasonic oscillation unit 60 includes a case member 61 and an ultrasonic transducer 70.

[0031] The case member 61 includes a box-shaped case body 62 with an opening at the top and a flat plate-shaped lid 63. The case body 62 is made of metal and integrally includes a disk-shaped bottom portion 65 having a bottom surface 64 facing the first surface 2 of the SiC ingot 1 held by the ingot holding unit 41, and a cylindrical portion 66 standing upright from the outer edge of the bottom portion 65. In addition, in the present invention, the case member 61 may be configured such that, for example, six ultrasonic vibrators 70 are used and the bottom portion 65 is configured in an elliptical shape. In the present invention, if the bottom portion 65 of the case member 61 is configured in a square or rectangular shape, the distance from the ultrasonic vibrator 70 to the case member 61 may change depending on the location, which may affect the peelability. Therefore, it is preferable that the bottom portion 65 is configured in a disk or elliptical shape in order to make the distance from the ultrasonic vibrator 70 to the bottom portion 65 of the case member 61 as equal as possible.

[0032] A bottom surface 64 of a bottom surface portion 65 of the case body 62 is formed to have an area equal to or greater than the area of ​​the first surface 2 of the SiC ingot 1 to which the ultrasonic oscillation unit 60 wishes to apply ultrasonic waves. That is, the case member 61 has a bottom surface 64 having an area equal to or greater than the area of ​​the first surface 2 of the SiC ingot 1 to which the ultrasonic oscillation unit 60 wishes to apply ultrasonic waves.

[0033] In the present invention, having an area equal to or greater than the area of ​​the first surface 2 of the SiC ingot 1 to which ultrasonic waves are to be applied means that the area of ​​the bottom surface 64 of the case body 62 is greater than or equal to 50% and less than or equal to 150% of the area of ​​the first surface 2 of the SiC ingot 1 held in the ingot holding unit 41 to which ultrasonic waves are to be applied.

[0034] If the area of ​​the bottom surface 64 is less than 50% of the area of ​​the first surface 2, it is possible to peel the wafer 20 to be produced from the SiC ingot 1 by oscillating the ultrasonic oscillation unit 60 in the X-axis direction, but the time required to peel the wafer 20 from the SiC ingot 1 increases. If the area of ​​the bottom surface 64 exceeds 150% of the area of ​​the first surface 2, the entire peeling device 40 becomes too large, which is undesirable, and it becomes difficult for the liquid supply unit 50 to supply liquid between the wafer 20 to be produced from the SiC ingot 1 and the bottom surface 64 of the ultrasonic oscillation unit 60. In the first embodiment, the area of ​​the bottom surface 64 is 80% of the area of ​​the first surface 2.

[0035] The lid body 63 is formed in a disk shape with an outer diameter equal to the outer diameter of the bottom surface 64. The lid body 63 has an outer edge fixed to the outer edge of the cylindrical portion 66, and closes the opening of the case main body 62.

[0036] The ultrasonic transducer 70 oscillates ultrasonic waves. In the first embodiment, the ultrasonic oscillation unit 60 includes a plurality of ultrasonic transducers 70. The plurality of ultrasonic transducers 70 are housed in the case member 61, arranged at intervals from each other, and fixed to the bottom surface portion 65 of the case main body 62.

[0037] The ultrasonic transducer 70 includes an annular piezoelectric element 71, a cylindrical first metal block 72, a second metal block 73, and a fixing bolt 75.

[0038] In the first embodiment, the ultrasonic transducer 70 includes two piezoelectric elements 71. The two piezoelectric elements 71 are stacked on top of each other in the axial direction. The piezoelectric element 71 is made of lead zirconate titanate, which expands and contracts in the thickness direction when AC power is applied.

[0039] The first metal block 72 is made of metal and is placed on one of the piezoelectric elements 71. The second metal block 73 is made of metal and is placed on the other of the piezoelectric elements 71. The second metal block 73 is formed in a truncated cone shape whose outer shape becomes larger as it moves away from the other of the piezoelectric elements 71. The second metal block 73 has an end face 731 placed on the other of the piezoelectric elements 71, on which a screw hole 732 into which a bolt 75 screws is opened.

[0040] The bolt 75 is passed through the inside of the first metal block 72, one piezo element 71, and the other piezo element 71, and is screwed into the screw hole 732 of the second metal block 73. When the bolt 75 is screwed into the screw hole 732, the first metal block 72, one piezo element 71, the other piezo element 71, and the second metal block 73 are fixed to one another.

[0041] In the first embodiment, the first metal block 72, one piezoelectric element 71, the other piezoelectric element 71, and the second metal block 73 fixed by the bolt 75 are arranged in a position where they are coaxial with each other. In the first embodiment, the ultrasonic transducer 70 is provided with electrodes 74 between the piezoelectric elements 71 and between the other piezoelectric element 71 and the second metal block 73 for applying AC power to the piezoelectric elements 71. The electrodes 74 are electrically connected to an AC power source (not shown) that supplies AC power. When AC power is applied to the electrodes and the piezoelectric elements 71 expand and contract, the ultrasonic oscillation unit 60 as a whole, that is, the bottom surface 64 in particular, vibrates (so-called ultrasonic vibration) at a frequency of 20 kHz or more and 200 kHz and an amplitude of several μm to several tens of μm.

[0042] In the first embodiment, the ultrasonic oscillation unit 60 has the same metal material constituting the case member 61 and the metal blocks 72 and 73. When the piezoelectric element 71 expands and contracts to generate ultrasonic vibrations, a material with a smaller specific gravity is more likely to vibrate, so the case member 61 and the metal blocks 72 and 73 are made of the same metal material.

[0043] In the first embodiment, the metal constituting the case member 61 and the metal blocks 72 and 73 is stainless steel, titanium alloy, or aluminum alloy. That is, the case member 61 and the metal blocks 72 and 73 include any of stainless steel, titanium, and aluminum. If the metal constituting the case member 61 and the metal blocks 72 and 73 is an aluminum alloy, it is preferable that the metal be extra-super duralumin (specified as A7075 by the Japanese Industrial Standards) in order to prevent damage caused by cavitation.

[0044] In the present invention, the metal constituting the case member 61 and the metal blocks 72 and 73 is preferably stainless steel, which has a higher specific gravity than aluminum alloys such as super duralumin, because the increased weight reduces the characteristic fluctuation due to the load and makes it easier to follow and control the resonance frequency by the AC power source. The ultrasonic oscillation unit 60 in the present invention weighs 1.4 kg when made of aluminum alloy, while stainless steel with the same external shape weighs 1.8 kg.

[0045] In addition, in the first embodiment, the bottom surface portion 65 of the case member 61 is formed integrally with an end face 733 (indicated by a dotted line in FIG. 9) on the side away from the piezoelectric element 71 of the second metal block 73 of each ultrasonic transducer 70. That is, in the first embodiment, the ultrasonic oscillation unit 60 is integral with the bottom surface portion 65 of the case member 61 and the second metal block 73. The integral bottom surface portion 65 of the case member 61 and the second metal block 73 are manufactured by machining a block of metal.

[0046] In the first embodiment, the ultrasonic oscillation unit 60 is moved by the moving unit 67 along the holding surface of the ingot holding unit 41, and is raised and lowered in a direction intersecting the holding surface (orthogonal in the first embodiment).

[0047] The control unit 100 controls the above-mentioned components of the peeling apparatus 40 to cause the peeling apparatus 40 to perform processing operations on the SiC ingot 1. The control unit 100 is a computer having an arithmetic processing device having a microprocessor such as a CPU (central processing unit), a storage device having a memory such as a ROM (read only memory) or a RAM (random access memory), and an input / output interface device. The arithmetic processing device of the control unit 100 performs arithmetic processing according to a computer program stored in the storage device, and outputs control signals for controlling the peeling apparatus 40 to the above-mentioned components of the peeling apparatus 40 via the input / output interface device.

[0048] The control unit 100 is connected to a display unit (not shown) configured with a liquid crystal display device or the like for displaying the status and images of the machining operation, and an input unit (not shown) used by an operator to register machining content information, etc. The input unit is configured with at least one of a touch panel provided on the display unit and an external input device such as a keyboard.

[0049] In the peeling apparatus 40 of embodiment 1, the second surface 3 of the SiC ingot 1 having the peeling layer 23 formed thereon is placed on the holding surface 42 of the ingot holding unit 41, the control unit 100 receives processing content information via the input unit and stores it in a memory device, and when the control unit 100 receives an instruction to start processing from an operator, the processing operation is started.

[0050] In the processing operation, since the peeling device 40 has the liquid supply unit 50 and the ultrasonic oscillation unit 60 integrated therewith, the liquid supply unit 50 and the ultrasonic oscillation unit 60 are lowered to approach the first surface 2 of the SiC ingot 1 held by the ingot holding unit 41. The peeling device 40 supplies liquid 51 from the liquid supply unit 50 to the first surface 2 of the SiC ingot 1 held by the ingot holding unit 41, and immerses the bottom surface 64 of the case member 61 in the liquid 51 on the first surface 2 of the SiC ingot 1.

[0051] The peeling device 40 rotates the ingot holding unit 41 around its axis by the rotary drive source 43 and moves the ultrasonic oscillator unit 60 back and forth along the holding surface 42, while applying AC power to the piezoelectric elements 71 of the ultrasonic oscillators 70 of the ultrasonic oscillator unit 60 for a predetermined time to ultrasonically vibrate the bottom surface 64. The peeling device 40 transmits the ultrasonic vibration of the bottom surface 64 to the first surface 2 of the SiC ingot 1 through the liquid 51, and applies ultrasonic waves to the first surface 2 of the ingot holding unit 41. Then, ultrasonic waves from the ultrasonic oscillator unit 60 stimulate the peeling layer 23, and the SiC ingot 1 is divided starting from the peeling layer 23, and the wafer 20 to be produced is separated from the SiC ingot 1. The peeling device 40 applies AC power to the piezoelectric elements 71 of the ultrasonic oscillators 70 of the ultrasonic oscillator unit 60 for a predetermined time, and then ends the processing operation. In the present invention, the delamination device 40 may end the processing operation when it detects the delamination of the wafer 20 from the SiC ingot 1.

[0052] The wafer 20 to be produced, separated from the SiC ingot 1, is adsorbed by an adsorption mechanism (not shown) and peeled off from the SiC ingot 1, and a surface 21 peeled off from the SiC ingot 1 is subjected to grinding, polishing, and the like.

[0053] As described above, the delamination apparatus 40 according to the first embodiment includes the ultrasonic oscillation unit 60 in which the second metal block 73 of the ultrasonic vibrator 70 and the bottom surface portion 65 of the case member 61 functioning as a vibration plate are integrated, and therefore peeling of the adhesive or the like that fixes the ultrasonic vibrator 70 to the bottom surface portion 65 does not occur, and fluctuations in the characteristics (frequency, amplitude) of the ultrasonic vibrator 70 can be suppressed. As a result, the delamination apparatus 40 according to the first embodiment has the effect of being able to efficiently produce the wafer 20 from the SiC ingot 1 while suppressing fluctuations in the characteristics of the ultrasonic vibrator 70.

[0054] Furthermore, in the delamination device 40 according to embodiment 1, since there is almost no change in the characteristics of the ultrasonic transducer 70 over time, the change in load during ultrasonic vibration can be suppressed, stable operation can be achieved with a phase difference of 0%, and power efficiency is improved (for example, from 50% in the conventional case to nearly 100%).

[0055] [Embodiment 2] A peeling device according to a second embodiment of the present invention will be described with reference to the drawings. Fig. 10 is a side view showing a configuration example of a peeling device according to a second embodiment. In Fig. 10, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0056] A peeling device 40-2 according to the second embodiment shown in FIG. 10 is the same as that of the first embodiment, except that the area of ​​the bottom surface 64 is 120% of the area of ​​the first surface 2.

[0057] The peeling apparatus 40-2 of embodiment 2 includes an ultrasonic oscillation unit 60 in which the second metal block 73 of the ultrasonic vibrator 70 and the bottom portion 65 of the case member 61 that functions as a vibration plate are integrated, and thus, similar to embodiment 1, it has the effect of being able to efficiently produce a wafer 20 from a SiC ingot 1 while suppressing fluctuations in the characteristics of the ultrasonic vibrator 70.

[0058] Next, the inventors of the present invention confirmed the effects of the separation apparatuses 40, 40-2 according to the above-mentioned embodiment 1 and embodiment 2 by checking the occurrence of peeling between the second metal block 73 and the bottom surface portion 65 of the case member 61 when the wafers 20 were separated from the same SiC ingot 1 in each of the comparative example, the present invention 1, and the present invention 2. The results are shown in Table 1.

[0059] [Table 1]

[0060] In the comparative example in Table 1, the second metal block 73 of the ultrasonic transducer 70 of the delamination device 40 according to the first embodiment and the bottom portion 65 of the case member 61 were formed separately and fixed together with an adhesive.

[0061] Product 1 of the present invention in Table 1 is the peeling device 40 according to the first embodiment, and product 2 of the present invention in Table 2 is the peeling device 40-2 according to the second embodiment.

[0062] Table 1 shows the occurrence of peeling between the second metal block 73 and the bottom surface 65 of the case member 61 when wafers 20 were produced from SiC ingot 1 having an outer diameter of 4 inches in the comparative example, present invention product 1, and present invention product 2. In the confirmation shown in Table 1, the frequency, current value, and application time of the AC power applied to the piezoelectric element 71 of the comparative example, present invention product 1, and present invention product 2 were the same.

[0063] According to Table 1, in the comparative example, peeling occurred after driving the ultrasonic transducer 70 for 1000 hours. In contrast to this comparative example, in the present invention products 1 and 2, peeling did not occur even after driving the ultrasonic transducer 70 for 1000 hours.

[0064] Therefore, according to Table 1, it is clear that by providing an ultrasonic oscillation unit 60 in which the second metal block 73 of the ultrasonic transducer 70 and the bottom portion 65 of the case member 61 that functions as a vibration plate are integrated, peeling between the ultrasonic transducer 70 and the bottom portion 65 can be suppressed.

[0065] The present invention is not limited to the above embodiment. In other words, various modifications can be made without departing from the gist of the present invention. For example, in the present invention, the delamination devices 40, 40-2 may have a delamination means (means for suction-holding and transporting the wafer 20) for delaminating the wafer 20 separated from the SiC ingot 1 by applying ultrasonic vibration. [Explanation of symbols]

[0066] 1. SiC ingot (ingot) 20 wafers 22 Thickness 23 Peeling layer 32 Laser Beam 33 Focus point 35 Depth 40,40-2 Peeling device 41 Ingot Holding Unit 50 Liquid Supply Unit 51 Liquid 60 Ultrasonic Oscillation Unit 61 Case material 64 Bottom 70 Ultrasonic transducer 733 End face

Claims

1. A delamination apparatus for delaminating a wafer to be produced from an ingot on which a delamination layer has been formed by irradiating the ingot with a laser beam, the delamination apparatus positioning a focal point of the laser beam having a wavelength that is transparent to the ingot at a depth corresponding to a thickness of the wafer to be produced, the delamination apparatus comprising: an ingot holding unit for holding an ingot with a wafer to be produced facing up; an ultrasonic oscillation unit that is disposed so as to face the ingot held by the ingot holding unit and that oscillates ultrasonic waves; A liquid supply unit that supplies liquid between the wafer to be produced and the ultrasonic oscillation unit, The ultrasonic oscillation unit includes: An ultrasonic transducer; and a case member having a bottom surface formed to have an area equal to or greater than the area to which ultrasonic waves are to be applied; The case member has a plate-shaped bottom surface portion having the bottom surface, and the bottom surface portion is integrated with a metal block which is fixed to the piezoelectric element of the ultrasonic transducer by a bolt, thereby forming the case member integrally with the end surface of the ultrasonic transducer.

2. 2. The removal device according to claim 1, wherein the case member includes any one of stainless steel, titanium, and aluminum.

Images