Detection device and imaging device

Abstract

To provide a detection device and an image capture device capable of detecting light in a plurality of wavelength bands with the same sensor.SOLUTION: A detection device includes a light source emitting light including a first wavelength band and a second wavelength band, a first color filter that transmits light in the first wavelength band, a second color filter that transmits light in the second wavelength band, a first photodiode that receives light having transmitted the first color filter, and a second photodiode that receives light having transmitted the second color filter. In the detection device, the first color filters and the second color filters are arranged alternately on the substrate in the first direction.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present invention relates to a detection device and an imaging device. [Background technology]

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (for example, Patent Document 1). Among such optical sensors, sensors having a plurality of photodiodes using an organic semiconductor material as an active layer are known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2009-32005 A Summary of the Invention [Problem to be solved by the invention]

[0004] Optical sensors are required to detect not only the shape of a fingerprint of a detection object such as a finger or palm, but also various biological information of the detection object (for example, blood vessel images of a finger or palm, pulse waves, pulse rate, blood oxygen concentration, etc.) For this reason, there are cases where the same optical sensor is required to detect light of different wavelength bands according to the detection object.

[0005] An object of the present invention is to provide a detection device and an imaging device capable of detecting light in a plurality of wavelength bands with the same sensor. [Means for solving the problem]

[0006] A detection device of one embodiment of the present invention includes a light source that irradiates light including a first wavelength band and a second wavelength band, a first color filter that transmits light in the first wavelength band, a second color filter that transmits light in the second wavelength band, a first photodiode that receives light that has transmitted through the first color filter, and a second photodiode that receives light that has transmitted through the second color filter.

[0007] An imaging device according to one aspect of the present invention includes a detection device and an image processing unit that generates two-dimensional information based on detection signals from the first photodiode, the second photodiode, and the third photodiode. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view showing a detection device according to a first embodiment. [Diagram 2] FIG. 2 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. [Diagram 3] FIG. 3 is a circuit diagram showing the detection device. [Figure 4] FIG. 4 is a circuit diagram showing a plurality of partial detection areas. [Diagram 5] FIG. 5 is a cross-sectional view showing a schematic cross-sectional configuration of the sensor unit. [Figure 6] FIG. 6 is a timing waveform diagram showing an example of the operation of the detection device. [Figure 7] FIG. 7 is a timing waveform diagram showing an example of operation during the readout period in FIG. [Figure 8] FIG. 8 is a plan view of the optical filter layer. [Figure 9] FIG. 9 is a cross-sectional view showing a schematic cross-sectional configuration of the detection device. [Figure 10] FIG. 10 is an explanatory diagram for explaining the relationship between the driving of the sensor unit of the detection device and the lighting operation of the light source. [Figure 11] FIG. 11 is a cross-sectional view showing a schematic cross-sectional configuration of a detection device according to a first modified example. [Figure 12] FIG. 12 is a cross-sectional view showing a schematic cross-sectional configuration of a detection device according to a second modified example. [Figure 13] FIG. 13 is a plan view of a filter layer included in the detection device according to the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present disclosure is not limited by the contents described in the following embodiments. The components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the components described below can be appropriately combined. Note that the disclosure is merely an example, and those that a person skilled in the art can easily imagine appropriate modifications while maintaining the gist of the present disclosure are naturally included in the scope of the present disclosure. In addition, in order to make the explanation clearer, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment, but they are merely examples and do not limit the interpretation of the present disclosure. In addition, in this disclosure and each figure, elements similar to those described above with respect to the previously mentioned figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0010] In this specification and the claims, when expressing an aspect of arranging another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is arranged directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is arranged above a certain structure via yet another structure.

[0011] (First embodiment) Fig. 1 is a plan view showing a detection device according to a first embodiment. As shown in Fig. 1, the detection device 1 has a sensor substrate 21 (substrate), a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, and light sources 53 and 54. A plurality of light sources 53 are provided on the first light source substrate 51. A plurality of light sources 54 are provided on the second light source substrate 52.

[0012] The control board 121 is electrically connected to the sensor base material 21 via a flexible printed circuit board 71. The flexible printed circuit board 71 is provided with a detection circuit 48. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the light sources 53 and 54 to control the lighting or non-lighting of the light sources 53 and 54. The power supply circuit 123 supplies voltage signals such as a sensor power supply signal VDDSNS (see FIG. 4) to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. The power supply circuit 123 also supplies a power supply voltage to the light sources 53 and 54.

[0013] The sensor substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area in which a plurality of photodiodes PD (see FIG. 4) of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the end of the sensor substrate 21, and is an area in which the plurality of photodiodes PD are not provided.

[0014] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0015] In the following description, the first direction Dx is one direction in a plane parallel to the sensor substrate 21. The second direction Dy is one direction in a plane parallel to the sensor substrate 21 and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect the first direction Dx without being perpendicular to it. In addition, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the sensor substrate 21.

[0016] The multiple light sources 53 are provided on the first light source substrate 51 and arranged along the second direction Dy. The multiple light sources 54 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0017] The light sources 53 and 54 may be, for example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs). The light sources 53 and 54 each emit light L1 including a first wavelength band and a second wavelength band. The first wavelength band is, for example, a wavelength band that indicates red light, and the second wavelength band is a wavelength band that indicates infrared light.

[0018] Of the light L1 emitted from the light sources 53 and 54, light L1a in a first wavelength band (e.g., red light) is mainly reflected by the surface of a detection object such as a finger and enters the sensor unit 10. This allows the sensor unit 10 to detect a fingerprint by detecting the shape of the projections and recesses on the surface of a finger or the like. Of the light L1 emitted from the light sources 53 and 54, light L1b in a second wavelength band (e.g., infrared light) is mainly reflected inside the finger or passes through the finger or the like and enters the sensor unit 10. This allows the sensor unit 10 to detect information about a living body inside a finger or the like. The information about a living body is, for example, a pulse wave, a pulse, a blood vessel image, etc. of a finger or a palm. That is, the detection device 1 may be configured as a fingerprint detection device that detects a fingerprint, or a vein detection device that detects a blood vessel pattern such as a vein.

[0019] For example, the first wavelength band may have a wavelength of 500 nm or more and 600 nm or less, for example, about 550 nm, and the second wavelength band may have a wavelength of 780 nm or more and 950 nm or less, for example, about 850 nm. In this case, the light L1a of the first wavelength band is blue or green visible light, and the light L1b of the second wavelength band is infrared light. The sensor unit 10 can detect a fingerprint based on the light L1a of the first wavelength band emitted from the light sources 53 and 54. Alternatively, the light L1b of the second wavelength band emitted from the light sources 53 and 54 is reflected inside the detection object such as a finger or transmitted or absorbed by the finger or the like and enters the sensor unit 10. As a result, the sensor unit 10 can detect a pulse wave or a blood vessel image (blood vessel pattern) as information about the living body inside the finger or the like.

[0020] Alternatively, the first wavelength band may have a wavelength of 600 nm or more and 700 nm or less, for example, about 660 nm, and the second wavelength band may have a wavelength of 780 nm or more and 900 nm or less, for example, about 850 nm. In this case, based on the light L1a of the first wavelength band and the light L1b of the second wavelength band emitted from the light sources 53 and 54, the sensor unit 10 can detect information about the living body, such as a pulse wave, a pulse, and a blood vessel image, as well as blood oxygen saturation. In this way, the detection device 1 can detect various information about the living body by performing detection based on the light L1a of the first wavelength band and detection based on the light L1b of the second wavelength band.

[0021] The arrangement of the light sources 53, 54 shown in FIG. 1 is merely an example and can be changed as appropriate. The detection device 1 is provided with one type of light source 53, 54 as the light source. However, the present invention is not limited to this, and the light source may be of two or more types. In this case, for example, a plurality of light sources 53 and a plurality of light sources 54 may be arranged on each of the first light source substrate 51 and the second light source substrate 52. Furthermore, the number of light source substrates on which the light sources 53 and the light sources 54 are arranged may be one or three or more. Alternatively, it is sufficient that at least one or more light sources are arranged.

[0022] Fig. 2 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. As shown in Fig. 2, the detection device 1 further includes a detection control unit 11 and a detection unit 40. A part or all of the functions of the detection control unit 11 are included in a control circuit 122. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0023] The sensor unit 10 has a plurality of photodiodes PD. The photodiodes PD of the sensor unit 10 output an electric signal corresponding to the irradiated light as a detection signal Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection according to a gate drive signal Vgcl supplied from the gate line drive circuit 15.

[0024] The detection control unit 11 is a circuit that supplies control signals to the gate line driving circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control unit 11 supplies various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, to the gate line driving circuit 15. The detection control unit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control unit 11 also supplies various control signals to the light sources 53 and 54, and controls the lighting and non-lighting of each.

[0025] The gate line driving circuit 15 is a circuit that drives multiple gate lines GCL (see FIG. 3) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects multiple gate lines GCL and supplies a gate driving signal Vgcl to the selected gate lines GCL. In this way, the gate line driving circuit 15 selects multiple photodiodes PD connected to the gate lines GCL.

[0026] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL (see FIG. 3). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SGL to the detection circuit 48 based on a selection signal ASW supplied from the detection control unit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photodiode PD to the detection unit 40.

[0027] The detection unit 40 includes a detection circuit 48, a signal processing unit 44, a coordinate extraction unit 45, a storage unit 46, a detection timing control unit 47, an image processing unit 49, and an output processing unit 50. Based on a control signal supplied from the detection control unit 11, the detection timing control unit 47 controls the detection circuit 48, the signal processing unit 44, the coordinate extraction unit 45, and the image processing unit 49 so that they operate in synchronization with each other.

[0028] The detection circuit 48 is, for example, an analog front-end circuit (AFE). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal.

[0029] The signal processing unit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger is in contact with or close to the detection surface, the signal processing unit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing unit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body is, for example, an image of blood vessels in the finger or palm, a pulse wave, a pulse rate, a blood oxygen concentration, etc.

[0030] Furthermore, the signal processing unit 44 may acquire detection signals Vdet (information about a living body) simultaneously detected by a plurality of photodiodes PD and execute a process of averaging these. In this case, the detection unit 40 can suppress measurement errors caused by noise and relative positional deviation between the detection object such as a finger and the sensor unit 10, enabling stable detection.

[0031] The storage unit 46 temporarily stores the signal calculated by the signal processing unit 44. The storage unit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0032] The coordinate extraction unit 45 is a logic circuit that determines the detection coordinates of the unevenness of the surface of the finger or the like when the contact or proximity of the finger is detected in the signal processing unit 44. The coordinate extraction unit 45 is also a logic circuit that determines the detection coordinates of the blood vessels of the finger or the palm. The image processing unit 49 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or the palm. The coordinate extraction unit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates. The coordinate extraction unit 45 and the image processing unit 49 may not be included in the detection unit 40.

[0033] The output processing unit 50 functions as a processing unit that performs processing based on outputs from the multiple photodiodes PD. The output processing unit 50 may include the detection coordinates obtained by the coordinate extraction unit 45, the two-dimensional information generated by the image processing unit 49, and the like in the sensor output voltage Vo. Furthermore, the function of the output processing unit 50 may be integrated into another configuration (for example, the image processing unit 49, etc.).

[0034] Next, an example of the circuit configuration of the detection device 1 will be described. Fig. 3 is a circuit diagram showing the detection device. As shown in Fig. 3, the sensor unit 10 has a plurality of partial detection areas PAA arranged in a matrix. A photodiode PD is provided in each of the partial detection areas PAA.

[0035] The gate lines GCL extend in a first direction Dx and are connected to a plurality of partial detection areas PAA arranged in the first direction Dx. The plurality of gate lines GCL(1), GCL(2), ..., GCL(8) are arranged in a second direction Dy and are each connected to a gate line driving circuit 15. In the following description, when there is no need to distinguish between the plurality of gate lines GCL(1), GCL(2), ..., GCL(8), they are simply referred to as gate lines GCL. In addition, in FIG. 3, eight gate lines GCL are shown for ease of explanation, but this is merely an example, and M gate lines GCL (M is 8 or more, for example, M=256) may be arranged.

[0036] The signal line SGL extends in the second direction Dy and is connected to the photodiodes PD of the partial detection areas PAA arranged in the second direction Dy. The signal lines SGL(1), SGL(2), ..., SGL(12) are arranged in the first direction Dx and are each connected to the signal line selection circuit 16 and the reset circuit 17. In the following description, when it is not necessary to distinguish between the signal lines SGL(1), SGL(2), ..., SGL(12), they will simply be referred to as signal lines SGL.

[0037] For ease of understanding, 12 signal lines SGL are shown, but this is merely an example, and N signal lines SGL (N is 12 or more, for example, N=252) may be arranged. The resolution of the sensor is, for example, 508 dpi (dots per inch), and the number of cells is 252×256. In FIG. 3, the sensor unit 10 is provided between the signal line selection circuit 16 and the reset circuit 17. However, this is not limiting, and the signal line selection circuit 16 and the reset circuit 17 may be connected to the ends of the signal lines SGL in the same direction.

[0038] The gate line driving circuit 15 receives various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, from the control circuit 122 (see FIG. 1). The gate line driving circuit 15 sequentially selects the multiple gate lines GCL(1), GCL(2), ..., GCL(8) in a time-division manner based on the various control signals. The gate line driving circuit 15 supplies a gate driving signal Vgcl to the selected gate line GCL. As a result, the gate driving signal Vgcl is supplied to the multiple first switching elements Tr connected to the gate line GCL, and the multiple partial detection areas PAA arranged in the first direction Dx are selected as detection targets.

[0039] The signal line selection circuit 16 has a plurality of selection signal lines Lsel, a plurality of output signal lines Lout, and a third switching element TrS. The plurality of third switching elements TrS are provided corresponding to the plurality of signal lines SGL, respectively. The six signal lines SGL(1), SGL(2), ..., SGL(6) are connected to a common output signal line Lout1. The six signal lines SGL(7), SGL(8), ..., SGL(12) are connected to a common output signal line Lout2. The output signal lines Lout1, Lout2 are each connected to a detection circuit 48.

[0040] Here, the signal lines SGL(1), SGL(2), ..., SGL(6) are defined as a first signal line block, and the signal lines SGL(7), SGL(8), ..., SGL(12) are defined as a second signal line block. The multiple selection signal lines Lsel are each connected to the gate of the third switching element TrS included in one signal line block. Furthermore, one selection signal line Lsel is connected to the gate of the third switching element TrS of multiple signal line blocks.

[0041] The control circuit 122 (see FIG. 1) sequentially supplies the selection signal ASW to the selection signal line Lsel. As a result, the signal line selection circuit 16 sequentially selects the signal lines SGL in one signal line block in a time-division manner by the operation of the third switching element TrS. The signal line selection circuit 16 also selects one signal line SGL from each of the multiple signal line blocks. With this configuration, the detection device 1 can reduce the number of ICs (Integrated Circuits) including the detection circuit 48 or the number of IC terminals. The signal line selection circuit 16 may also bundle multiple signal lines SGL together and connect them to the detection circuit 48.

[0042] As shown in Fig. 3, the reset circuit 17 has a reference signal line Lvr, a reset signal line Lrst, and a fourth switching element TrR. The fourth switching element TrR is provided corresponding to the multiple signal lines SGL. The reference signal line Lvr is connected to one of the sources or drains of the multiple fourth switching elements TrR. The reset signal line Lrst is connected to the gates of the multiple fourth switching elements TrR.

[0043] The control circuit 122 supplies a reset signal RST2 to the reset signal line Lrst. This turns on the multiple fourth switching elements TrR, and the multiple signal lines SGL are electrically connected to the reference signal line Lvr. The power supply circuit 123 supplies a reference signal COM to the reference signal line Lvr. This causes the reference signal COM to be supplied to the capacitive elements Ca (see FIG. 4) included in the multiple partial detection areas PAA.

[0044] Fig. 4 is a circuit diagram showing a plurality of partial detection areas. Fig. 4 also shows the circuit configuration of a detection circuit 48. As shown in Fig. 4, the partial detection area PAA includes a photodiode PD, a capacitance element Ca, and a first switching element Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the photodiode PD, and is equivalently connected in parallel with the photodiode PD.

[0045] 4 shows two gate lines GCL(m) and GCL(m+1) arranged in the second direction Dy among the multiple gate lines GCL. Also, two signal lines SGL(n) and SGL(n+1) arranged in the first direction Dx among the multiple signal lines SGL. The partial detection area PAA is an area surrounded by the gate lines GCL and the signal lines SGL.

[0046] The first switching element Tr is provided corresponding to the photodiode PD. The first switching element Tr is configured with a thin film transistor, and in this example, is configured with an n-channel MOS (Metal Oxide Semiconductor) type TFT (Thin Film Transistor).

[0047] The gates of the first switching elements Tr belonging to the partial detection areas PAA aligned in the first direction Dx are connected to the gate line GCL. The sources of the first switching elements Tr belonging to the partial detection areas PAA aligned in the second direction Dy are connected to the signal line SGL. The drains of the first switching elements Tr are connected to the cathodes of the photodiodes PD and the capacitance elements Ca.

[0048] A sensor power supply signal VDDSNS is supplied to the anode of the photodiode PD from the power supply circuit 123. In addition, a reference signal COM that becomes the initial potential of the signal line SGL and the capacitance element Ca is supplied from the power supply circuit 123 to the signal line SGL and the capacitance element Ca.

[0049] When light is irradiated onto the partial detection area PAA, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitance element Ca. When the first switching element Tr is turned on, a current flows through the signal line SGL corresponding to the charge accumulated in the capacitance element Ca. The signal line SGL is connected to the detection circuit 48 via the third switching element TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the photodiode PD for each partial detection area PAA or for each block unit PAG.

[0050] In the detection circuit 48, the switch SSW is turned on during the readout period Pdet (see FIG. 6) and the detection circuit 48 is connected to the signal line SGL. The detection signal amplifier 42 of the detection circuit 48 converts the fluctuation of the current supplied from the signal line SGL into a fluctuation of the voltage and amplifies it. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier 42, and the signal line SGL is connected to the inverting input terminal (-). In the embodiment, a signal that is the same as the reference signal COM is input as the reference potential (Vref) voltage. The signal processor 44 (see FIG. 2) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. In addition, the detection signal amplifier 42 has a capacitance element Cb and a reset switch RSW. In the reset period Prst (see FIG. 6), the reset switch RSW is turned on and the charge of the capacitance element Cb is reset.

[0051] FIG. 5 is a cross-sectional view showing a schematic cross-sectional configuration of the sensor unit. As shown in FIG. 5, the sensor unit 10 includes a sensor substrate 21, a TFT layer 22, an organic insulating film 94, a lower electrode 23, a photodiode PD, an upper electrode 24, an optical filter layer 80, and a sealing film 96. The sensor substrate 21 is an insulating substrate, and for example, glass or a resin material is used. The sensor substrate 21 is not limited to a flat plate shape, and may have a curved surface. In this case, the sensor substrate 21 may be a film-shaped resin. The sensor substrate 21 has a first surface S1 and a second surface S2 opposite to the first surface. The TFT layer 22, the organic insulating film 94, the lower electrode 23, the photodiode PD, the upper electrode 24, the optical filter layer 80, and the sealing film 96 are laminated on the first surface S1 in this order. In this embodiment, a configuration in which light L1 is irradiated to the photodiode PD from the first surface S1 side will be described. However, the present invention is not limited to this, and the light L1 may be irradiated onto the photodiode PD from the second surface S2 side.

[0052] The TFT layer 22 is provided with circuits such as the gate line driving circuit 15 and the signal line selection circuit 16 described above. The TFT layer 22 is also provided with TFTs such as the first switching element Tr, and various wirings such as the gate line GCL and the signal line SGL. The sensor substrate 21 and the TFT layer 22 are a driving circuit board that drives a sensor for each predetermined detection area, and are also called a backplane or an array substrate.

[0053] The organic insulating film 94 is provided on the TFT layer 22. The organic insulating film 94 is a planarizing layer that planarizes unevenness formed by the first switching element Tr formed in the TFT layer 22 and various conductive layers.

[0054] The lower electrode 23 is provided on the organic insulating film 94, and is electrically connected to the first switching element Tr of the TFT layer 22 through a contact hole (not shown). The lower electrode 23 is a cathode of the photodiode PD, and is an electrode for reading out the detection signal Vdet. The lower electrode 23 is formed of a conductive material having light transmissivity, such as ITO (Indium Tin Oxide). Alternatively, the detection device 1 is a top-light-receiving type photosensor as described above, and the lower electrode 23 can be made of a metal material, such as silver (Ag). Alternatively, the lower electrode 23 may be made of a metal material, such as aluminum (Al), or an alloy material containing at least one of these metal materials.

[0055] The photodiode PD is provided on the lower electrode 23. The photodiode PD has an electron transport layer 33, an active layer 31, and a hole transport layer 32 on a lower electrode 35, which are laminated in this order in a direction perpendicular to the first surface S1 of the sensor substrate 21.

[0056] The characteristics (for example, voltage-current characteristics and resistance value) of the active layer 31 change according to the light irradiated thereto. An organic material is used as the material of the active layer 31. Specifically, the active layer 31 has a bulk heterostructure in which a p-type organic semiconductor and an n-type fullerene derivative (PCBM) which is an n-type organic semiconductor are mixed. For example, low molecular weight organic materials such as C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), and PDI (perylene derivative) can be used as the active layer 31.

[0057] The active layer 31 can be formed by a deposition type (dry process) using these low molecular weight organic materials. In this case, the active layer 31 may be, for example, a laminated film of CuPc and F16CuPc, or a laminated film of rubrene and C60. The active layer 31 can also be formed by a coating type (wet process). In this case, the active layer 31 is made of a material that combines the above-mentioned low molecular weight organic material and a polymer organic material. As the polymer organic material, for example, P3HT (poly(3-hexylthiophene)), F8BT (F8-alt-benzothiadiazole), etc. can be used. The active layer 31 can be a film in a state where P3HT and PCBM are mixed, or a film in a state where F8BT and PDI are mixed.

[0058] The upper electrode 24 is an anode of the photodiode PD and is an electrode for supplying a power supply signal VDDSNS to the photoelectric conversion layer. The upper electrode 24 and the lower electrode 23 face each other with the active layer 31 interposed therebetween. The upper electrode 24 is made of a conductive material having light transmission, such as ITO or IZO.

[0059] The electron transport layer 33 and the hole transport layer 32 are provided to facilitate the reaching of holes and electrons generated in the active layer 31 to the upper electrode 24 or the lower electrode 23. The electron transport layer 33 is provided between the lower electrode 23 and the active layer 31 in a direction perpendicular to the first surface S1 of the sensor substrate 21. The electron transport layer 33 is directly in contact with the upper surface of the lower electrode 23, and the active layer 31 is directly in contact with the upper surface of the electron transport layer 33. The material used for the electron transport layer 33 is ethoxylated polyethyleneimine (PEIE).

[0060] The hole transport layer 32 is provided between the active layer 31 and the upper electrode 24 in a direction perpendicular to the first surface S1 of the sensor substrate 21. The hole transport layer 32 is directly in contact with the active layer 31, and the upper electrode 24 is directly in contact with the hole transport layer 32. The hole transport layer 32 is a metal oxide layer. Tungsten oxide (WO3), molybdenum oxide, or the like is used as the metal oxide layer.

[0061] The optical filter layer 80 is provided on the upper electrode 24. The optical filter layer 80 selects light L1a in a first wavelength band or light L1b in a second wavelength band from the light L1, and transmits the light L1a in the first wavelength band or the light L1b in the second wavelength band to the photodiode PD. A detailed configuration of the optical filter layer 80 will be described later.

[0062] The sealing film 96 is provided to cover the optical filter layer 80. The photodiode PD is well sealed by the sealing film 96, and the intrusion of moisture from the upper surface side can be suppressed. If the optical filter layer 80 has a function as a sealing film, the sealing film 96 can be omitted. Alternatively, the sealing film 96 can be made thin.

[0063] Next, an operation example of the detection device 1 will be described. FIG. 6 is a timing waveform diagram showing an operation example of the detection device. As shown in FIG. 6, the detection device 1 has a reset period Prst, an exposure period Pex, and a readout period Pdet. The power supply circuit 123 supplies a sensor power supply signal VDDSNS to the anode of the photodiode PD over the reset period Prst, the exposure period Pex, and the readout period Pdet. The sensor power supply signal VDDSNS is a signal that applies a reverse bias between the anode and cathode of the photodiode PD. For example, a reference signal COM of substantially 0.75V is applied to the cathode of the photodiode PD, but by applying a sensor power supply signal VDDSNS of substantially -1.25V to the anode, the anode and cathode are reverse biased at substantially 2.0V. The control circuit 122 sets the reset signal RST2 to "H" and then supplies a start signal STV and a clock signal CK to the gate line driving circuit 15, and the reset period Prst begins. In the reset period Prst, the control circuit 122 supplies the reference signal COM to the reset circuit 17 and turns on the fourth switching element TrR for supplying a reset voltage by the reset signal RST2. As a result, the reference signal COM is supplied as a reset voltage to each signal line SGL. The reference signal COM is set to, for example, 0.75 V.

[0064] In the reset period Prst, the gate line driving circuit 15 sequentially selects the gate lines GCL based on the start signal STV, the clock signal CK, and the reset signal RST1. The gate line driving circuit 15 sequentially supplies the gate lines GCL with the gate driving signals Vgcl {Vgcl(1) to Vgcl(M)}. The gate driving signal Vgcl has a pulse-like waveform having a power supply voltage VDD, which is a high-level voltage, and a power supply voltage VSS, which is a low-level voltage. In FIG. 6, M (for example, M=256) gate lines GCL are provided, and the gate driving signals Vgcl(1), ..., Vgcl(M) are sequentially supplied to each gate line GCL, and the first switching elements Tr are sequentially turned on for each row, and a reset voltage is supplied. For example, the voltage of 0.75V of the reference signal COM is supplied as the reset voltage.

[0065] As a result, in the reset period Prst, the capacitance elements Ca in all the partial detection areas PAA are sequentially electrically connected to the signal line SGL and the reference signal COM is supplied. As a result, the capacitance of the capacitance elements Ca is reset. It is also possible to reset the capacitance of some of the capacitance elements Ca in the partial detection area PAA by partially selecting the gate lines and the signal lines SGL.

[0066] Examples of exposure timing include a gate line non-selection exposure control method and a constant exposure control method. In the gate line non-selection exposure control method, gate drive signals {Vgcl(1)-(M)} are sequentially supplied to all gate lines GCL connected to the photodiode PD to be detected, and a reset voltage is supplied to all photodiodes PD to be detected. After that, when all gate lines GCL connected to the photodiode PD to be detected are at a low voltage (the first switching element Tr is off), exposure starts, and exposure is performed during the exposure period Pex. When exposure ends, as described above, gate drive signals {Vgcl(1)-(M)} are sequentially supplied to the gate lines GCL connected to the photodiode PD to be detected, and reading is performed during the readout period Pdet. In the constant exposure control method, it is also possible to control exposure to be performed during the reset period Prst and readout period Pdet (constant exposure control). In this case, the exposure period Pex(1) starts after the gate drive signal Vgcl(1) is supplied to the gate lines GCL during the reset period Prst. Here, the exposure period Pex{(1)...(M)} is a period during which the photodiode PD charges the capacitance element Ca. The charge stored in the capacitance element Ca during the reset period Prst flows in the photodiode PD as a reverse current (from the cathode to the anode) due to light irradiation, and the potential difference of the capacitance element Ca decreases. Note that the actual exposure periods Pex(1), ..., Pex(M) in the partial detection area PAA corresponding to each gate line GCL have different start and end timings. The exposure periods Pex(1), ..., Pex(M) each start when the gate drive signal Vgcl changes from the high-level voltage of the power supply voltage VDD to the low-level voltage of the power supply voltage VSS during the reset period Prst. Also, the exposure periods Pex(1), ..., Pex(M) each end when the gate drive signal Vgcl changes from the power supply voltage VSS to the power supply voltage VDD during the readout period Pdet. The exposure time lengths of the exposure periods Pex(1), . . . , Pex(M) are equal.

[0067] In the gate line non-selection exposure control method, in the exposure periods Pex{(1)...(M)}, a current flows in each partial detection area PAA according to the light irradiated to the photodiode PD. As a result, a charge is accumulated in each capacitance element Ca.

[0068] Before the readout period Pdet starts, the control circuit 122 sets the reset signal RST2 to a low-level voltage. This stops the operation of the reset circuit 17. The reset signal may be set to a high-level voltage only during the reset period Prst. During the readout period Pdet, as in the reset period Prst, the gate line drive circuit 15 sequentially supplies gate drive signals Vgcl(1), ..., Vgcl(M) to the gate lines GCL.

[0069] Specifically, the gate line driving circuit 15 supplies a gate driving signal Vgcl(1) of a high-level voltage (power supply voltage VDD) to the gate line GCL(1) during a period V(1). The control circuit 122 sequentially supplies selection signals ASW1, ..., ASW6 to the signal line selection circuit 16 during the period in which the gate driving signal Vgcl(1) is at a high-level voltage (power supply voltage VDD). As a result, the signal lines SGL of the partial detection area PAA selected by the gate driving signal Vgcl(1) are sequentially or simultaneously connected to the detection circuit 48. As a result, the detection signal Vdet is supplied to the detection circuit 48 for each partial detection area PAA.

[0070] Similarly, the gate line driving circuit 15 supplies high-level voltage gate driving signals Vgcl(2), ..., Vgcl(M-1), Vgcl(M) to the gate lines GCL(2), ..., GCL(M-1), GCL(M) during periods V(2), ..., V(M-1), V(M). That is, the gate line driving circuit 15 supplies the gate driving signal Vgcl to the gate line GCL during each period V(1), V(2), ..., V(M-1), V(M). During each period in which each gate driving signal Vgcl is at a high level voltage, the signal line selection circuit 16 sequentially selects the signal lines SGL based on the selection signal ASW. The signal line selection circuit 16 sequentially connects each signal line SGL to one detection circuit 48. As a result, during the readout period Pdet, the detection device 1 can output the detection signals Vdet of all partial detection areas PAA to the detection circuit 48.

[0071] Fig. 7 is a timing waveform diagram showing an example of operation during the readout period in Fig. 6. Below, with reference to Fig. 7, an example of operation during the supply period Readout of one gate drive signal Vgcl(j) in Fig. 6 will be described. In Fig. 6, the first gate drive signal Vgcl(1) is given the symbol of the supply period Readout, but the same is true for the other gate drive signals Vgcl(2), ..., Vgcl(M). j is any natural number from 1 to M.

[0072] As shown in FIG. 7 and FIG. 4, the output voltage (V out) is reset to a reference potential (Vref) voltage in advance. The reference potential (Vref) voltage is a reset voltage, for example, 0.75V. Next, the gate drive signal Vgcl(j) goes high, the first switching element Tr of the row is turned on, and the signal line SGL of each row goes to a voltage according to the charge stored in the capacitance (capacitor element Ca) of the partial detection area PAA. After a period t1 has elapsed since the rising edge of the gate drive signal Vgcl(j), a period t2 occurs during which the selection signal ASW(k) goes high. When the selection signal ASW(k) goes high and the third switching element TrS is turned on, the output voltage (V out ) (see FIG. 4) changes to a voltage according to the charge accumulated in the capacitance (capacitor element Ca) of the partial detection area PAA (period t3). In the example of FIG. 7, this voltage drops from the reset voltage as in period t3. After that, when the switch SSW is turned on (period t4 when the SSW signal is at a high level), the charge accumulated in the capacitance (capacitor element Ca) of the partial detection area PAA moves to the capacitance (capacitor element Cb) of the detection signal amplifier 42 of the detection circuit 48, and the output voltage of the detection signal amplifier 42 becomes a voltage according to the charge accumulated in the capacitor element Cb. At this time, the inverting input section of the detection signal amplifier 42 becomes the imaginary short potential of the operational amplifier, so that it has returned to the reference potential (Vref). The output voltage of the detection signal amplifier 42 is read out by the A / D converter 43. In the example of Fig. 7, the waveforms of the selection signals ASW(k), ASW(k+1), ... corresponding to the signal lines SGL of each column become high to sequentially turn on the third switching elements TrS, and similar operations are sequentially performed to sequentially read out the charges accumulated in the capacitances (capacitive elements Ca) of the partial detection areas PAA connected to the corresponding gate lines GCL. Note that ASW(k), ASW(k+1), ... in Fig. 7 are, for example, any of ASW1 to ASW6 in Fig. 7.

[0073] Specifically, when a period t4 occurs during which the switch SSW is on, charge moves from the capacitance (capacitor element Ca) of the partial detection area PAA to the capacitance (capacitor element Cb) of the detection signal amplifier 42 of the detection circuit 48. At this time, the non-inverting input (+) of the detection signal amplifier 42 is biased to a reference potential (Vref) voltage (for example, 0.75 [V]). For this reason, an imaginary short between the inputs of the detection signal amplifier 42 causes the output voltage (V out ) also becomes the reference potential (Vref) voltage. The voltage of the capacitance element Cb becomes a voltage according to the charge accumulated in the capacitance (capacitance element Ca) of the partial detection area PAA where the third switching element TrS is turned on in response to the selection signal ASW(k). The output voltage of the detection signal amplifier 42 becomes the output voltage (V out ) becomes the reference potential (Vref) voltage, then becomes a voltage according to the capacitance of the capacitive element Cb, and this output voltage is read by the A / D conversion unit 43. Note that the voltage of the capacitive element Cb is, for example, the voltage between two electrodes provided in the capacitor that constitutes the capacitive element Cb.

[0074] The period t1 is, for example, 20 [μs], the period t2 is, for example, 60 [μs], the period t3 is, for example, 44.7 [μs], and the period t4 is, for example, 0.98 [μs].

[0075] 6 and 7 show an example in which the gate line driving circuit 15 selects the gate lines GCL individually, but the present invention is not limited to this. The gate line driving circuit 15 may simultaneously select a predetermined number of gate lines GCL (two or more) and sequentially supply the gate driving signal Vgcl to each of the predetermined number of gate lines GCL. The signal line selection circuit 16 may also simultaneously connect a predetermined number of signal lines SGL (two or more) to one detection circuit 48. Furthermore, the gate line driving circuit 15 may scan a plurality of gate lines GCL by thinning them out.

[0076] Next, the configuration of the optical filter layer 80 will be described. Fig. 8 is a plan view of the optical filter layer. As shown in Fig. 8, the optical filter layer 80 includes a first color filter 81, a second color filter 82, and a light-shielding layer 85. The first color filter 81 has a function of transmitting light L1a of a first wavelength band out of the light L1 from the light sources 53 and 54. The second color filter 82 has a function of transmitting light L1b of a second wavelength band out of the light L1 from the light sources 53 and 54.

[0077] The plurality of first color filters 81 and the plurality of second color filters 82 are arranged at intervals for each partial detection area PAA. The first color filters 81 and the second color filters 82 are alternately arranged along the first direction Dx. The plurality of first color filters 81 are arranged side by side in the second direction Dy. The plurality of second color filters 82 are arranged side by side in the second direction Dy.

[0078] The light-shielding layer 85 is provided between the first color filter 81 and the second color filter 82 adjacent to each other in the first direction Dx. The light-shielding layer 85 is provided between the first color filters 81 adjacent to each other in the second direction Dy and between the second color filters 82 adjacent to each other in the second direction Dy. In other words, the light-shielding layer 85 is provided between the adjacent partial detection areas PAA. The light-shielding layer 85 is provided so as to overlap the gate lines GCL and the signal lines SGL. However, in FIG. 8, the gate lines GCL and the signal lines SGL are shown at positions shifted from the light-shielding layer 85 in order to illustrate them.

[0079] In this embodiment, the photodiode PD has a first photodiode PD1 and a second photodiode PD2. The first photodiode PD1 is provided in an area overlapping with each of the first color filters 81, and receives light (light L1a of a first wavelength band) transmitted through the first color filter 81. The second photodiode PD2 is provided in an area overlapping with each of the second color filters 82, and receives light (light L1b of a second wavelength band) transmitted through the second color filter 82.

[0080] In the following description, the region overlapping with the first color filter 81 may be referred to as a first detection region PAA-R, and the region overlapping with the second color filter 82 may be referred to as a second detection region PAA-IR.

[0081] Fig. 9 is a cross-sectional view showing a schematic cross-sectional configuration of the detection device. Fig. 9 is a cross-sectional view taken along line IX-IX' in Fig. 8, for example. As shown in Fig. 9, the detection device 1 has a sensor substrate 21, a first switching element Tr, an organic insulating film 94, a lower electrode 23, an inorganic insulating film 95, a photodiode PD (only the active layer 31 is shown in Fig. 9), an upper electrode 24, an optical filter layer 80, and a sealing film 96.

[0082] In this specification, the direction perpendicular to the surface of the sensor substrate 21 from the sensor substrate 21 to the photodiode PD is referred to as the "upper side" or simply "upper". Also, the direction from the photodiode PD to the sensor substrate 21 is referred to as the "lower side" or simply "lower".

[0083] The light-shielding film 65 is provided on the sensor substrate 21. The light-shielding film 65 is provided between the semiconductor layer 61 and the sensor substrate 21. The light-shielding film 65 can suppress intrusion of light from the sensor substrate 21 side into the channel region of the semiconductor layer 61.

[0084] An undercoat film 91 is provided on the sensor substrate 21, covering the light-shielding film 65. The undercoat film 91 is formed of an inorganic insulating film such as a silicon nitride film or a silicon oxide film. Note that the configuration of the undercoat film 91 is not limited to a single layer film, and multiple layers of inorganic insulating films may be laminated.

[0085] The first switching element Tr (transistor) is provided on the sensor substrate 21. The first switching element Tr is provided corresponding to each of the multiple first photodiodes PD1 and the multiple second photodiodes PD2. Specifically, the first switching element Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64. The semiconductor layer 61 is provided on the undercoat film 91. The semiconductor layer 61 is made of, for example, polysilicon. However, the semiconductor layer 61 is not limited to this, and may be made of a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, low-temperature polysilicon, or the like.

[0086] The gate insulating film 92 is provided on the undercoat film 91 to cover the semiconductor layer 61. The gate insulating film 92 is an inorganic insulating film such as a silicon oxide film. The gate electrode 64 is provided on the gate insulating film 92. In the example shown in Fig. 9, the first switching element Tr has a top gate structure. However, the first switching element Tr is not limited to this, and may have a bottom gate structure or a dual gate structure in which the gate electrode 64 is provided on both the upper and lower sides of the semiconductor layer 61.

[0087] The interlayer insulating film 93 is provided on the gate insulating film 92, covering the gate electrode 64. The interlayer insulating film 93 has, for example, a laminated structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 93. The source electrode 62 is connected to the source region of the semiconductor layer 61 through a second contact hole CH2 provided in the gate insulating film 92 and the interlayer insulating film 93. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 through a third contact hole CH3 provided in the gate insulating film 92 and the interlayer insulating film 93.

[0088] The organic insulating film 94 covers the source electrode 62 and the drain electrode 63 of the first switching element Tr and is provided on the interlayer insulating film 93. The organic insulating film 94 is an organic planarizing film, and is superior in coverage of wiring steps and surface flatness compared to inorganic insulating materials formed by CVD or the like.

[0089] The lower electrode 23 and the inorganic insulating film 95 are provided on the organic insulating film 94. The photodiode PD is provided on the lower electrode 23. More specifically, the lower electrode 23 is provided on the organic insulating film 94, and is connected to the drain electrode 63 of the first switching element Tr at the bottom surface of a first contact hole CH1 formed in the organic insulating film 94. The lower electrode 23 is a cathode electrode of the photodiode PD. The multiple lower electrodes 23 are arranged at a distance for each partial detection area PAA (first photodiode PD1 and second photodiode PD2).

[0090] The inorganic insulating film 95 is provided to cover a part of the lower electrode 23. The inorganic insulating film 95 is made of a material such as a silicon nitride film or an aluminum oxide film. More specifically, the inorganic insulating film 95a is provided on the organic insulating film 94 between adjacent lower electrodes 23 and covers the outer edge of the lower electrode 23. The inorganic insulating film 95a insulates the lower electrodes 23 of adjacent photodiodes PD. The inorganic insulating film 95a overlaps with the source electrode 62 (signal line SGL) and is located below the light-shielding layer 85 of the optical filter layer 80.

[0091] The inorganic insulating film 95b is separated from the inorganic insulating film 95a, and is provided to cover the lower electrode 23 inside the first contact hole CH1.

[0092] Moreover, the photodiode PD has an area larger than that of the lower electrode 23 in a plan view. The photodiode PD (active layer 31) and the upper electrode 24 are provided continuously across a plurality of partial detection areas PAA. In other words, the first photodiode PD1 and the second photodiode PD2 are formed of a common organic semiconductor material and have the same sensitivity characteristics. The first photodiode PD1 and the second photodiode PD2 are sensitive to both the first wavelength band and the second wavelength band of the light L1 irradiated from the light sources 53 and 54.

[0093] The upper electrode 24 is provided on the first photodiode PD1 and the second photodiode PD2. The upper electrode 24 is an anode electrode of the photodiode PD, and is formed continuously across a plurality of partial detection areas PAA (photodiodes PD).

[0094] The optical filter layer 80 further has inorganic insulating films 86, 88, and an overcoat layer 87. The inorganic insulating film 86 is provided on the upper electrode 24. The first color filter 81, the second color filter 82, and the light-shielding layer 85 are provided on the inorganic insulating film 86. The light-shielding layer 85 is provided between the adjacent first color filter 81 and second color filter 82. The outer edge of the first color filter 81 and the outer edge of the second color filter 82 cover a part of the light-shielding layer 85.

[0095] The first color filter 81 and the second color filter 82 are made of resist materials corresponding to the first wavelength band and the second wavelength band, respectively, and are patterned for each partial detection area PAA by photolithography.

[0096] The overcoat layer 87 is provided to cover the first color filter 81, the second color filter 82, and the light-shielding layer 85. The overcoat layer 87 is formed so as to flatten steps formed by the first color filter 81, the second color filter 82, and the light-shielding layer 85. The inorganic insulating film 88 is provided on the overcoat layer 87.

[0097] The sealing film 96 is provided on the inorganic insulating film 88. The sealing film 96 is made of an inorganic film such as a silicon nitride film or an aluminum oxide film, or a resin film such as an acrylic film. The sealing film 96 is not limited to a single layer, and may be a laminated film of two or more layers combining the above-mentioned inorganic films and resin films. The photodiode PD is well sealed by the optical filter layer 80 and the sealing film 96, and the intrusion of moisture from the upper surface side can be suppressed.

[0098] With this configuration, in the first detection region PAA-R, the first photodiode PD1 receives light in a first wavelength band (e.g., red light) transmitted through the first color filter 81. In the second detection region PAA-IR, the second photodiode PD2 receives light in a second wavelength band (e.g., infrared light) transmitted through the second color filter 82. In addition, since a light-shielding layer 85 is provided between the adjacent first color filter 81 and second color filter 82, color mixing between the first photodiode PD1 and the second photodiode PD2 can be suppressed. That is, the light-shielding layer 85 suppresses the light in the first wavelength band (e.g., red light) transmitted through the first color filter 81 from entering the second photodiode PD2, and also suppresses the light in the second wavelength band (e.g., infrared light) transmitted through the second color filter 82 from entering the first photodiode PD1.

[0099] Fig. 10 is an explanatory diagram for explaining the relationship between the driving of the sensor unit of the detection device and the lighting operation of the light source. As shown in Fig. 10, during the exposure period Pex, the light sources 53 and 54 are turned on and irradiate light L1 including the first wavelength band and the second wavelength band. At this time, the light L1 is irradiated simultaneously to both the first detection area PAA-R (first color filter 81) and the second detection area PAA-IR (second color filter 82). The light L1 passes through the first color filter 81 and the second color filter 82, respectively, and is irradiated simultaneously to the first photodiode PD1 and the second photodiode PD2.

[0100] The gate line driving circuit 15 scans the gate line GCL and sequentially executes the readout period Pdet and the reset period Prst described above in Fig. 6 and Fig. 7. As a result, the first photodiode PD1 in the first detection area PAA-R outputs a detection signal Vdet(R) corresponding to the light L1a in the first wavelength band. The second photodiode PD2 in the second detection area PAA-IR outputs a detection signal Vdet(IR) corresponding to the light L1b in the second wavelength band.

[0101] The detection circuit 48 performs signal processing on each of the detection signal Vdet(R) received from the first photodiode PD1 and the detection signal Vdet(IR) received from the second photodiode PD2. The signal processing unit 44 performs calculations such as calculating the difference between the signal-processed detection signal Vdet(R) and the detection signal Vdet(IR), and the calculation results are stored in the storage unit 46 in sequence.

[0102] The light sources 53 and 54 are turned off during the readout period Pdet and the reset period Prst, and are turned on and off repeatedly in a time-division manner for each period. However, this is not limited to this, and the light sources 53 and 54 may be turned on continuously during the readout period Pdet and the reset period Prst.

[0103] Since the detection device 1 of this embodiment is provided with the first color filter 81 and the second color filter 82, the detection of the light L1a in the first wavelength band by the first photodiode PD1 and the detection of the light L1b in the second wavelength band by the second photodiode PD2 can be performed in the same period. That is, the irradiation of the light L1a in the first wavelength band and the irradiation of the light L1b in the second wavelength band can be performed simultaneously. Therefore, the decrease in the detection frame rate can be suppressed compared to the case where the detection of the light L1a in the first wavelength band and the detection of the light L1b in the second wavelength band are performed in a time-division manner.

[0104] As described above, the detection device 1 of this embodiment has light sources 53, 54 that irradiate light L1 including a first wavelength band and a second wavelength band, a first color filter 81 that transmits light L1a in the first wavelength band, a second color filter 82 that transmits light L1b in the second wavelength band, a first photodiode PD1 that receives the light L1 that has transmitted through the first color filter 81, and a second photodiode PD2 that receives the light L1 that has transmitted through the second color filter 82.

[0105] As a result, broadband light L1 including the first and second wavelength bands emitted from the multiple light sources 53, 54 is spatially separated into each wavelength band by the first color filter 81 and the second color filter 82. The first photodiode PD1 receives light in the first wavelength band (e.g., red light) that has passed through the first color filter 81. The second photodiode PD2 receives light in the second wavelength band (e.g., infrared light) that has passed through the second color filter 82.

[0106] That is, the detection device 1 can detect the detection signal Vdet corresponding to two or more different wavelength bands using the multiple light sources 53, 54 that irradiate the common light L1, and the first photodiode PD1 and the second photodiode PD2 that have the same sensitivity characteristics. In other words, it is not necessary to provide multiple types of light sources for each of the two or more different wavelength bands, and it is not necessary to provide multiple types of photodiodes PD having two or more different sensitivity characteristics.

[0107] (First Modification) Fig. 11 is a cross-sectional view showing a schematic cross-sectional configuration of a detection device according to a first modified example. As shown in Fig. 11, the detection device 1A according to the first modified example further includes a counter substrate 21A. The counter substrate 21A is provided above the multiple first photodiodes PD1 and the multiple second photodiodes PD2, and faces the sensor substrate 21.

[0108] The optical filter layer 80A is provided on a surface of the counter substrate 21A facing the sensor base material 21 (a surface facing the multiple first photodiodes PD1 and multiple second photodiodes PD2). The multiple first color filters 81, the multiple second color filters 82, and the light-shielding layer 85A are provided in direct contact with the surface of the counter substrate 21A facing the sensor base material 21. In addition, an overcoat layer 87 is provided to cover the multiple first color filters 81, the multiple second color filters 82, and the light-shielding layer 85A.

[0109] The detection device 1A of this embodiment is manufactured by bonding a sensor substrate 21, on which a plurality of switching elements Tr and photodiodes PD are formed, and a counter substrate 21A, on which an optical filter layer 80A is formed, via an adhesive layer 89A. A spacer PS is provided between the overcoat layer 87 and the inorganic insulating film 89. The spacer PS defines the distance between the substrates when the sensor substrate 21 side and the counter substrate 21A side are bonded together.

[0110] In other words, in a direction perpendicular to the sensor substrate 21, a plurality of first switching elements Tr, an organic insulating film 94, a lower electrode 23, a photodiode PD (a plurality of first photodiodes PD1 and a plurality of second photodiodes PD2), an upper electrode 24, an inorganic insulating film 89, an adhesive layer 89A, an optical filter layer (a first color filter 81A and a second color filter 82A), and a counter substrate 21A are stacked in this order.

[0111] The first color filters 81A, the second color filters 82A, and the light-shielding layer 85A are not limited to being provided directly on the counter substrate 21A, and may be provided on the counter substrate 21A via an insulating film.

[0112] In the detection device 1A of the first modified example, a plurality of first color filters 81A, a plurality of second color filters 82A, and a light-shielding layer 85A are formed on the opposing substrate 21A, so that damage to the photodiode PD can be suppressed compared to the case where the plurality of first color filters 81, the plurality of second color filters 82, and the light-shielding layer 85 are patterned on the photodiode PD.

[0113] Moreover, since the counter substrate 21A and the optical filter layer 80A are provided to cover the photodiode PD, it is possible to prevent moisture from entering from the upper surface side. That is, in the first modified example, at least the counter substrate 21A also functions as the sealing film 96 (see FIG. 9).

[0114] (Second Modification) Fig. 12 is a cross-sectional view showing a schematic cross-sectional configuration of a detection device according to Modification 2. As shown in Fig. 12, in a detection device 1B according to Modification 2, an optical filter layer 80B is provided between a sensor substrate 21 and a photodiode PD.

[0115] More specifically, the first color filters 81B and the second color filters 82B are provided on the first switching elements Tr (transistors). The first color filters 81B and the second color filters 82B are provided on the interlayer insulating film 93 in the same layer as the source electrode 62 and the drain electrode 63. The first color filters 81B and the second color filters 82B have openings in areas overlapping with the source electrode 62 and the drain electrode 63. The openings of the first color filters 81B and the second color filters 82B may be provided at least in areas overlapping with the first contact hole CH1.

[0116] The plurality of first photodiodes PD1 and the plurality of second photodiodes PD2 are provided on the plurality of first color filters 81B and the plurality of second color filters 82B with an organic insulating film 94 interposed therebetween.

[0117] A first inorganic insulating film 97A, a sealing resin 98, a second inorganic insulating film 97B, and a sealing film 96 are laminated in this order on the photodiode PD, thereby ensuring that the upper surface side of the photodiode PD is sealed satisfactorily.

[0118] The detection device 1B is a bottom-receiving type optical sensor in which light from the light sources 53 and 54 is irradiated from the second surface S2 (see FIG. 5) side of the sensor substrate 21. In the second modified example as well, the broadband light L1 including the first and second wavelength bands irradiated from the sensor substrate 21 side is spatially separated for each wavelength band by the first color filter 81B and the second color filter 82B. The first photodiode PD1 receives light in the first wavelength band (e.g., red light) that has passed through the first color filter 81B. The second photodiode PD2 receives light in the second wavelength band (e.g., infrared light) that has passed through the second color filter 82B.

[0119] In the second modified example, the optical filter layer 80B is provided between the sensor substrate 21 and the photodiode PD, thereby making it possible to achieve a thinner configuration compared to a configuration in which the optical filter layer 80B is provided separately on the second surface S2 side of the sensor substrate 21.

[0120] Second embodiment 13 is a plan view of a filter layer included in a detection device according to the second embodiment. As shown in FIG. 13, in a detection device 1C according to the second embodiment, an optical filter layer 80C includes a first color filter 81C, a second color filter 82C, and a third color filter 83C. The first color filter 81C transmits light L1a in a first wavelength band (e.g., red light). The second color filter 82C transmits light L1b in a second wavelength band (e.g., green light). The third color filter 83C transmits light in a third wavelength band (e.g., blue light). The first color filter 81C, the second color filter 82C, and the third color filter 83C are repeatedly arranged in this order along a first direction Dx.

[0121] The photodiode PD includes a first photodiode PD1, a second photodiode PD2, and a third photodiode PD3. The first photodiode PD1, the second photodiode PD2, and the third photodiode PD3 are repeatedly arranged in this order along the first direction Dx.

[0122] The first photodiode PD1 receives light (e.g., red light) transmitted through the first color filter 81C. The second photodiode PD2 receives light (e.g., green light) transmitted through the second color filter 82C. The third photodiode PD3 receives light (e.g., blue light) transmitted through the third color filter 83C.

[0123] In the second embodiment, light L1 emitted from light sources 53, 54, and 55 (light source 55 is not shown) is broadband light including light L1a in a first wavelength band, light L1b in a second wavelength band, and light L1c in a third wavelength band. The light L1 emitted from the light sources 53 and 54 is transmitted through the first color filter 81C, the second color filter 82C, and the third color filter 83C, respectively, and is simultaneously irradiated onto the first photodiode PD1, the second photodiode PD2, and the third photodiode PD3.

[0124] A detection unit 40 (see FIG. 2) including an image processing unit 49 generates two-dimensional information based on detection signals Vdet from the first photodiode PD1, the second photodiode PD2, and the third photodiode PD3. The detection device 1C of this embodiment is applied to an imaging device such as a color scanner.

[0125] Although the preferred embodiment of the present invention has been described above, the present invention is not limited to such an embodiment. The contents disclosed in the embodiment are merely examples, and various modifications are possible within the scope of the present invention. Appropriate modifications made within the scope of the present invention naturally belong to the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the gist of each of the above-mentioned embodiments and each modified example. [Explanation of symbols]

[0126] 1, 1A, 1B, 1C Detector 10 Sensor section 11 Detection control section 15 Gate line driving circuit 16 Signal line selection circuit 21 Sensor substrate 21A Opposite board 23 Lower electrode 24 Upper electrode 31 Active layer 32 Hole transport layer 33 Electron transport layer 40 Detection unit 48 Detection Circuit 80, 80A, 80B, 80C Optical filter layer 81, 81A, 81B, 81C First color filter 82, 82A, 82B, 82C Second color filter 83C 3rd color filter 94 Organic insulating film 95 Inorganic insulating film 96 Sealing film PD Photodiode PD1 First photodiode PD2 Second photodiode PD3 Third photodiode AA detection area GA Peripheral Areas

Claims

1. a light source that emits light including a first wavelength band and a second wavelength band; a first color filter that transmits light in the first wavelength band; a second color filter that transmits light in the second wavelength band; a first photodiode that receives light transmitted through the first color filter; a second photodiode that receives light transmitted through the second color filter; a plurality of transistors provided corresponding to the first photodiodes and the second photodiodes, the first color filters and the second color filters are provided on the transistors, The first photodiodes and the second photodiodes are provided on the first color filters and the second color filters via an organic insulating film. Detection device.

2. a substrate on which the first photodiode and the second photodiode are provided; The first color filters and the second color filters are alternately arranged on the substrate along a first direction. The detection device according to claim 1 .

3. The light emitted from the light source is transmitted through the first color filter and the second color filter, and is simultaneously irradiated onto the first photodiode and the second photodiode.

3. The detection device according to claim 1 or 2.

4. the first wavelength band is a wavelength band that indicates red, The second wavelength band is a wavelength band representing infrared light. The detection device according to any one of claims 1 to 3.

5. the light from the light source further comprises a third wavelength band; a third color filter that transmits light in the third wavelength band; a third photodiode that receives light transmitted through the third color filter; The detection device according to claim 1 .

6. The light emitted from the light source is transmitted through the first color filter, the second color filter, and the third color filter, and is simultaneously irradiated onto the first photodiode, the second photodiode, and the third photodiode.

6. The detection device according to claim 5.

7. the first wavelength band is a wavelength band that indicates red, The second wavelength band is a wavelength band that indicates green. The third wavelength band is a wavelength band that exhibits blue color.

7. The detection device according to claim 5 or 6.

8. A detection device according to any one of claims 5 to 7; an image processing unit that generates two-dimensional information based on detection signals from the first photodiode, the second photodiode, and the third photodiode; Imaging device.

Images