Surface emitting laser device and its manufacturing method

Abstract

To provide a surface emitting laser device in which internal stress is reduced and reliability is improved, and to provide a manufacturing method thereof.SOLUTION: A surface emitting laser device Z1 includes a first reflective layer 11, an active light emitting layer 12, a second reflective layer 13, and a current limiting layer 14. The active light-emitting layer is located between the first reflective layer and the second reflective layer for generating a laser beam. The current limiting layer is located above or below the active light emitting layer. The current limiting layer is a semiconductor layer, and an energy band gap of the current limiting layer is greater than the energy band gap of the active light emitting layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a surface emitting laser device and a method for manufacturing the same, and more particularly to a vertical cavity chamber surface emitting laser device and a method for manufacturing the same. [Background technology]

[0002] In existing vertical cavity chamber surface emitting lasers, a high resistance oxide layer or an ion implantation region is usually formed in the top Bragg reflector by ion implantation or wet oxidation processes to limit the current flow area, but the cost of forming the current limiting oxide layer or ion implantation region by ion implantation or thermal oxidation processes is high and the hole size is not easily controlled.

[0003] In addition, there is a large difference in lattice mismatch and thermal expansion coefficient between the oxide layer and the semiconductor material forming the top Bragg reflector, which makes the vertical cavity chamber surface emitting laser prone to destruction due to internal stress after annealing, which reduces the manufacturing yield. The internal stress of the components also reduces the component life and reduces the optical output characteristics and reliability. Summary of the Invention [Problem to be solved by the invention]

[0004] The technical problem to be solved by the present invention is to provide a surface-emitting laser device and a manufacturing method thereof to make up for the deficiencies in the existing technology, thereby reducing the internal stress of the surface-emitting laser device and improving the reliability of the surface-emitting laser device. [Means for solving the problem]

[0005] In order to solve the above technical problems, a surface emitting laser device is provided as a technical solution adopted in the present invention. The surface emitting laser device includes a first reflective layer, an active light emitting layer, a second reflective layer, and a current limiting layer. The active light emitting layer is located between the first reflective layer and the second reflective layer and generates a laser beam. The current limiting layer is located above or below the active light emitting layer. The current limiting layer is a semiconductor layer, and its energy band gap is larger than that of the active light emitting layer.

[0006] In order to solve the above technical problems, a surface emitting laser device is provided as a technical solution adopted in the present invention. The surface emitting laser device includes a first reflecting layer, an active light emitting layer, a second reflecting layer, and a current limiting layer. The active light emitting layer is located between the first reflecting layer and the second reflecting layer and generates a laser beam. The current limiting layer is located in the first reflecting layer or the second reflecting layer and includes at least one doped semiconductor layer. When the current limiting layer is located in the first reflecting layer, the doped semiconductor layer and the first reflecting layer have opposite conductivity types. When the current limiting layer is located in the second reflecting layer, the doped semiconductor layer and the second reflecting layer have opposite conductivity types.

[0007] In order to solve the above-mentioned technical problems, the present invention provides a method for manufacturing a surface emitting laser device, which includes the steps of forming a first reflective layer, forming an active light emitting layer on the first reflective layer, forming a current limiting layer, and forming a second reflective layer, where the current limiting layer defines a boundary hole, and the material of the current limiting layer is an intrinsic semiconductor or a doped semiconductor. Effect of the Invention

[0008] One beneficial effect of the present invention is that in the surface-emitting laser device and its manufacturing method, the technical solution in which the current limiting layer is a semiconductor layer and the energy band gap of the current limiting layer is larger than the energy band gap of the active light-emitting layer reduces the internal stress of the surface-emitting laser device, thereby improving the reliability of the surface-emitting laser device.

[0009] In order to better understand the characteristics and technical contents of the present invention, please refer to the following detailed description of the present invention and the accompanying drawings, which do not limit the protection scope of the present invention in any way. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional view of a surface-emitting laser device according to a first embodiment of the present invention. [Diagram 2] 4 is a schematic cross-sectional view of a surface-emitting laser device according to a second embodiment of the present invention. FIG. [Diagram 3] FIG. 11 is a schematic cross-sectional view of a surface-emitting laser device according to a third embodiment of the present invention. [Figure 4] FIG. 11 is a schematic cross-sectional view of a surface-emitting laser device according to a fourth embodiment of the present invention. [Diagram 5] FIG. 11 is a schematic cross-sectional view of a surface-emitting laser device according to a fifth embodiment of the present invention. [Figure 6] 4 is a flowchart of a method for manufacturing a surface-emitting laser device according to an embodiment of the present invention. [Figure 7] FIG. 2 is a schematic diagram of the surface emitting laser device according to the embodiment of the present invention at step S10. [Figure 8] FIG. 2 is a schematic diagram of the surface emitting laser device according to the embodiment of the present invention at step S20. [Figure 9] FIG. 2 is a schematic diagram of the surface emitting laser device according to the embodiment of the present invention at step S30. [Figure 10] FIG. 2 is a schematic diagram of the surface emitting laser device according to the embodiment of the present invention at step S30. [Figure 11] FIG. 2 is a schematic diagram of the surface emitting laser device according to the embodiment of the present invention at step S40. [Figure 12] FIG. 2 is a schematic diagram of the surface emitting laser device according to the embodiment of the present invention at step S50. [Figure 13] 1 is a schematic diagram of a surface-emitting laser device according to another embodiment of the present invention at step S40. [Figure 14]1 is a schematic diagram of a surface-emitting laser device according to another embodiment of the present invention at step S50. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] [First embodiment] 1 and 2, an embodiment of the present invention provides a surface-emitting laser device Z1. In the embodiment of the present invention, the surface-emitting laser device Z1 is a vertical chamber surface-emitting laser device. The surface-emitting laser device Z1 includes a first reflective layer 11, an active light-emitting layer 12, a second reflective layer 13, and a current-limiting layer 14. Specifically, in this embodiment, the surface-emitting laser device Z1 also includes a base 10. The first reflective layer 11, the active light-emitting layer 12, the second reflective layer 13, and the current-limiting layer 14 are all disposed on the base 10, and the active light-emitting layer 12 is located between the first reflective layer 11 and the second reflective layer 13.

[0012] The base 10 can be an insulating base or a semiconductor base. The insulating base is, for example, sapphire, and the semiconductor base is, for example, silicon, germanium, silicon carbide, or a III-V group semiconductor. The III-V group semiconductor is, for example, gallium arsenide (GaAs), indium phosphate (InP), aluminum nitride (AlN), indium nitride (InN), or gallium nitride (GaN). The base 10 also has an epitaxial surface 10a and a bottom surface 10b opposite to the epitaxial surface 10a.

[0013] The first reflective layer 11, the active light-emitting layer 12, and the second reflective layer 13 are located in succession on the epitaxial surface 10a of the substrate 10. In this embodiment, the first reflective layer 11, the active light-emitting layer 12, and the second reflective layer 13 have the same cross-sectional width as the active light-emitting layer 12.

[0014] The first reflective layer 11 and the second reflective layer 13 may be a distributed Bragg reflector (DBR) formed by alternately stacking two types of thin films having different refractive indices, and reflect and resonate a light beam of a predetermined wavelength. In this embodiment, the material constituting the first reflective layer 11 and the second reflective layer 13 is a doped III-V compound semiconductor, and the first reflective layer 11 and the second reflective layer 13 have different conductivity types.

[0015] The active light emitting layer 12 is formed on the first reflecting layer 11 and serves to generate a laser beam L. In detail, the active light emitting layer 12 is located between the first reflecting layer 11 and the second reflecting layer 13, and is excited by electric power to generate an initial light flux. The initial light flux generated by the active light emitting layer 12 is reflected and resonated between the first reflecting layer 11 and the second reflecting layer 13 to amplify the gain, and finally emerges from the second reflecting layer 13 to generate a laser beam L.

[0016] The active light emitting layer 12 includes multiple film layers for forming multiple quantum wells. Specifically, trap layers and barrier layers (not shown) are alternately stacked, and neither is doped. The materials of the trap layers and barrier layers are determined according to the wavelength of the laser beam L to be generated. For example, if the laser beam L to be generated is red, the material of the trap layer can be indium gallium phosphide (InGaP). If the laser beam L to be generated is near-infrared light, the material of the trap layer can be indium gallium arsenide phosphide (InGaAsP) or indium gallium aluminum arsenide (InGaAlAs). If a blue or green laser beam L is generated, the trap layer can be indium gallium nitride (InxGa(1-x)N). However, the present invention is not limited by the above examples.

[0017] Please refer to FIG. 1. The surface emitting laser device Z1 also includes a current limiting layer 14. And the current limiting layer 14 can be located above or below the active light emitting layer 12. The current limiting layer 14 has a boundary hole 14H, which defines a current channel. It should be noted that as long as the current limiting layer 14 can define a current passing area, its position is not limited in the present invention. In this embodiment, the current limiting layer 14 is located in the second reflective layer 13 and connected to the active light emitting layer 12. As shown in FIG. 2, specifically, in this embodiment, a part of the second reflective layer 13 is filled in the boundary hole 14H and connected to the active light emitting layer 12. Since the second reflective layer 13 is a doped semiconductor material and has high conductivity, the part filled in the boundary hole 14H allows the current to pass.

[0018] In certain embodiments, the current limiting layer 14 is Intrinsic Semiconductor Layer and the higher electrical resistance prevents the passage of electric current. In addition, the material constituting the current limiting layer 14 can be selected as a semiconductor material that does not absorb the laser beam L. In other words, the semiconductor material constituting the current limiting layer 14 allows the laser beam L to pass through.

[0019] It is necessary to explain that when the wavelength of the laser beam L is λ (unit: nanometer) and the energy band gap of the semiconductor material constituting the current limiting layer 14 is Eg, the energy band gap Eg and the wavelength of the laser beam L have a relational expression of Eg>(1240 / λ). The laser beam L generated by the surface emitting laser device Z1 of the embodiment of the present invention is near infrared light, blue light, or green light. For example, when the laser beam L is near infrared light and the wavelength λ is 1550 nm, the energy band gap of the current limiting layer 14 should be greater than 0.8 eV. When the wavelength λ of the laser beam L is 950 nm, the energy band gap of the current limiting layer 14 should be greater than 1.3 eV. Furthermore, when the laser beam L is blue light or green light and the wavelength λ is 440 nm to 540 nm, the energy band gap of the current limiting layer 14 should be greater than 2.3 eV.

[0020] In this way, it is possible to prevent a decrease in the light-emitting efficiency of the surface-emitting laser device Z1 due to the current limiting layer 14 absorbing the laser beam L. In a specific embodiment, the energy band gap of the semiconductor material constituting the current limiting layer 14 is larger than the energy band gap of the semiconductor material constituting the trapping layer.

[0021] In addition, in this embodiment, the crystal lattice constant of the material of the current limiting layer 14 and the crystal lattice constant of the material of the active light emitting layer 12 are matched with each other, which can reduce interface defects. In a better embodiment, the lattice mismatch between the material of the current limiting layer 14 and the material of the active light emitting layer 12 is less than 0.1%. Furthermore, since the current limiting layer 14 in this embodiment is located in the second reflective layer 13, the lattice mismatch between the material of the current limiting layer 14 and the material of the second reflective layer 13 is less than 0.1%.

[0022] In other words, the energy band gap (Eg) and the crystal lattice constant must be considered together when selecting a material for the current limiting layer 14. Thus, the energy band gap (Eg) of the current limiting layer 14 is larger than the energy band gap of the active light emitting layer.

[0023] In a particular embodiment, the material constituting the current limiting layer 14 is a III-V compound semiconductor, which contains at least one of aluminum, indium, and gallium atoms, and is represented as AlxInyGazN, AlxInyGazP, or AlxInyGazAs, where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1. Examples include aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), gallium nitride (GaN), aluminum nitride (AlN), aluminum indium phosphide (AlInP), indium gallium phosphide (InGaP), aluminum gallium phosphide (AlGaAs), aluminum arsenide (AlAs), and aluminum indium gallium arsenide (AlInGaAs).

[0024] It should be noted that the aluminum composition (x), the indium composition (y), and the gallium composition (z) affect the energy band gap of the current limiting layer 14. When the aluminum composition (x) or the gallium composition (z) is large, the energy band gap of the current limiting layer 14 is large. When the indium composition (y) is large, the energy band gap of the current limiting layer 14 is small. Based on this, the energy band gap of the current limiting layer 14 can be adapted to actual requirements by controlling the aluminum composition (x), the indium composition (y), and the gallium composition (z).

[0025] For example, when the semiconductor material of the trapping layer is indium gallium nitride, the material of the current limiting layer 14 can be aluminum gallium nitride, indium gallium nitride (InGaN), or gallium nitride (GaN). When the material constituting the trapping layer is gallium arsenide or indium gallium arsenide (InGaAs), the material of the current limiting layer 14 can be aluminum gallium arsenide (AlxGazAs), aluminum arsenide (AlAs), or indium gallium phosphide (InGaP). In particular, when the material of the current limiting layer 14 is aluminum gallium arsenide (AlAs), the material of the current limiting layer 14 can be aluminum gallium arsenide (AlGaP). x Ga zIn the case where the active light emitting layer 12 and the second reflective layer 13 are both luminescent layers, the aluminum composition (x) can be controlled to tailor the energy band gap to the above requirements, and the lattice constant can be mutually matched with the active light emitting layer 12 and the second reflective layer 13 .

[0026] Compared with the conventional oxide layer, the current limiting layer 14 of this embodiment has a small degree of lattice mismatch between the active light emitting layer 12 and the second reflecting layer 13, so that the internal stress of the surface emitting laser device Z1 can be reduced and the reliability of the surface emitting laser device Z1 can be improved. In this embodiment, the total thickness of the current limiting layer 14 is 10 nm to 1000 nm. Since the current limiting layer 14, the active light emitting layer 12 and the second reflecting layer 13 are all made of semiconductor materials, the difference in thermal expansion coefficient is small. This can prevent the surface emitting laser element Z1 from cracking due to the difference in thermal expansion coefficient after annealing, and improve the processing yield.

[0027] In this embodiment, the current limiting layer 14 is located in the second reflective layer 13, and the second reflective layer 13 is a highly doped semiconductor material. Therefore, in a more preferred embodiment, the total thickness of the current limiting layer 14 is at least 30 nm, so that it is possible to prevent impurities in the second reflective layer 13 from diffusing into the current limiting layer 14 and affecting its polarity, thereby allowing current to pass directly through it and losing its current limiting ability, when the surface-emitting laser device Z1 is subjected to a heat treatment.

[0028] 1, the surface-emitting laser device Z1 according to the embodiment of the present invention further includes a first electrode layer 15 and a second electrode layer 16. The first electrode layer 15 is electrically connected to the first reflective layer 11, and the second electrode layer 16 is electrically connected to the second reflective layer 13. In the embodiment of FIG. 1, the first electrode layer 15 and the second electrode layer 16 are respectively located on different sides of the base 10, but in other embodiments, the first electrode layer 15 and the second electrode layer 16 may be located on the same side of the base 10.

[0029] More specifically, in this embodiment, the first electrode layer 15 is disposed on the bottom surface 10b of the base 10. The second electrode layer 16 is located on the second reflective layer 13 and is electrically connected to the second reflective layer 13. A current path is defined between the first electrode layer 15 and the second electrode layer 16 through the active light-emitting layer 12. The first electrode layer 15 and the second electrode layer 16 can be a single metal layer, an alloy layer, or a laminate layer composed of different metal materials.

[0030] 1, the second electrode layer 16 has an opening 16H that defines the light-emitting area A1, and the opening 16H corresponds to the boundary hole 14H of the current limiting layer 14, allowing the laser beam L generated by the active light-emitting layer 12 to exit from the opening 16H. In a particular embodiment, the second electrode layer 16 has an annular portion, but the present invention does not limit the shape of the second electrode layer 16 in plan view. The material of the second electrode layer 16 may be gold, tungsten, germanium, palladium, titanium, or any combination thereof.

[0031] In addition, the surface-emitting laser device Z1 of this embodiment further includes a current propagation layer 17 and a protective layer 18. The current propagation layer 17 is located on the second reflective layer 13 and is electrically connected to the second electrode layer 16. In a specific embodiment, the material of the current propagation layer 17 is a conductive material, which is used to uniformly distribute the current injected from the second reflective layer 13 to the active light-emitting layer 12. In addition, the material of the current propagation layer 17 is a material through which the laser beam L can pass, and can be avoided from excessively sacrificing the light-emitting efficiency of the surface-emitting laser device Z1. For example, when the wavelength of the laser beam L is 950 nm to 1550 nm, the material of the current propagation layer 17 can be a highly doped semiconductor material, such as highly doped indium phosphide, but the present invention is not limited thereto.

[0032] The protective layer 18 covers the current propagation layer 17 and the light emitting area A1 to prevent moisture from entering the surface emitting laser device Z1 and affecting the light emission characteristics or life of the surface emitting laser device Z1. In a specific embodiment, the protective layer 18 may be made of a moisture-resistant material such as silicon nitride, aluminum oxide, or a combination thereof, and the present invention is not limited to these examples. In this embodiment, the second electrode layer 16 is disposed on the protective layer 18 and connected to the second reflective layer 13 through the protective layer 18 and the current propagation layer 17, but the present invention is not limited thereto. In another embodiment, the current propagation layer 17 may be omitted.

[0033] At least a part of the current limiting layer 14 is located in the current path defined by the first electrode layer 15 and the second electrode layer 16. In this way, when a bias is applied to the surface-emitting laser device Z1 by the first electrode layer 15 and the second electrode layer 16, the current bypasses the current limiting layer 14 and passes through the boundary hole 14H because the electric resistance of the current limiting layer 14 is high. This increases the current density injected into the active light-emitting layer 12, improving the light-emitting efficiency of the surface-emitting laser device Z1.

[0034] [Second embodiment] Please refer to FIG. 2. FIG. 2 is a schematic cross-sectional view of a surface-emitting laser device Z2 according to a second embodiment of the present invention. In the surface-emitting laser device Z2 of this embodiment, the same parts as those in the surface-emitting laser device Z1 of the first embodiment are numbered similarly, and similar parts are omitted. In the surface-emitting laser device Z2 of this embodiment, the current limiting layer 14 is disposed in the second reflective layer 13, but is not connected to the active light-emitting layer 12. It is noteworthy that in this embodiment, the position of the current limiting layer 14 is set to be close to the active light-emitting layer 12 and far from the second electrode layer 16. In this way, the current injected into the active light-emitting layer 12 through the boundary hole 14H is concentrated, and the light-emitting efficiency of the surface-emitting laser device Z2 is improved.

[0035] Therefore, when the surface-emitting laser device Z1 is biased, the current only passes through the boundary hole 14H of the current limiting layer 14. Thus, although the current limiting layer 14 can limit the current, and its semiconductor energy band gap can meet the requirements mentioned above, and its crystal lattice constant can match with the active light-emitting layer 12 and the second reflective layer 13, the present invention does not limit the position of the current limiting layer 14 in the second reflective layer 13.

[0036] In this embodiment, the current limiting layer 14 is Intrinsic Semiconductor Layer Or it can be a doped semiconductor layer. When the current limiting layer 14 is a doped semiconductor layer, the current limiting layer 14 has an opposite conductivity type to that of the second reflective layer 13. For example, when the second reflective layer 13 is P-type, the current limiting layer 14 is N-type, and when the second reflective layer 13 is N-type, the current limiting layer 14 is P-type.

[0037] The current limiting layer 14 can divide the second reflective layer 13 into an upper and lower portion. The lower portion is located between the active light emitting layer 12 and the current limiting layer 14, and the upper portion is located between the current limiting layer 14 and the second electrode layer 16. A PN junction is formed between the current limiting layer 14 and the lower portion of the second reflective layer 13, and another PN junction is formed between the current limiting layer 14 and the upper portion of the second reflective layer 13.

[0038] Under this circumstance, the current limiting layer 14 and the lower part of the second reflective layer 13 can jointly form a Zener diode, which not only defines the area through which the current passes, but also provides electrostatic protection for the surface-emitting laser device Z2. Specifically, when a bias is applied to the surface-emitting laser device Z1 through the first electrode layer 15 and the second electrode layer 16, a reverse bias is also applied to the Zener diode, but it does not break down. Therefore, the Zener diode is not conducted, and the current bypasses the current limiting layer 14 and passes only through the boundary hole 14H, increasing the current density to the active light-emitting layer 12.

[0039] However, when electrostatic discharge occurs, the Zener diode conducts regardless of whether the electrostatic current is positive or negative. Since the resistance of the Zener diode when it conducts is much lower than the resistance of the second reflective layer 13 in the boundary hole 14H, most of the electrostatic current passes through the current limiting layer 14 and does not pass through the boundary hole 14H. The area occupancy rate of the current limiting layer 14 in a plan view is larger than the area occupancy rate of the boundary hole 14H in a plan view. When the Zener diode conducts, the electrostatic current flowing through the active light-emitting layer 12 is dispersed and the current density is reduced, so that damage to the active light-emitting layer 12 can be prevented. Therefore, when the material of the current limiting layer 14 is a doped semiconductor and forms a Zener diode together with the second reflective layer 13, it can not only clearly define the current channel, but also provide electrostatic discharge protection for the surface-emitting laser device Z1 and increase its reliability.

[0040] In another embodiment, the current limiting layer 14 is Intrinsic Semiconductor Layer Or it may include a doped semiconductor layer. Intrinsic Semiconductor Layer is located between the doped semiconductor layer and the bottom of the second reflective layer 13, the above-mentioned effect can also be achieved.

[0041] [Third embodiment] Please refer to Fig. 3. Fig. 3 is a cross-sectional view of a surface-emitting laser device according to a third embodiment of the present invention. In the surface-emitting laser device Z3 of this embodiment, the same elements as those in the surface-emitting laser device Z1 of the first embodiment are assigned the same numbers, and the same parts will not be described repeatedly.

[0042] In the surface-emitting laser device Z3 of this embodiment, the current limiting layer 14 is located between the active light-emitting layer 12 and the second reflective layer 13, but the current limiting layer 14 is not located within the second reflective layer 13. In particular, the surface-emitting laser device Z3 of this embodiment further includes a current injection layer 19, which is located between the current limiting layer 14 and the second electrode layer 16. In this embodiment, a part of the current injection layer 19 is filled in the boundary hole 14H of the current limiting layer 14.

[0043] In addition, in this embodiment, the material constituting the current injection layer 19 is a doped semiconductor material, and the current injection layer 19 and the first reflective layer 11 have opposite conductivity types. In a specific embodiment, the semiconductor material constituting the current injection layer 19 may be the same as the semiconductor material of the current limiting layer 14, but the invention is not limited thereto. The current limiting layer 14 is Intrinsic Semiconductor Layer If the current limiting layer 14 is a doped semiconductor layer, its conductivity type is opposite to that of the current injection layer 19.

[0044] In another embodiment, the current limiting layer 14 is not connected to the active light emitting layer 12, but can be embedded in the current injection layer 19. When the current limiting layer 14 includes a doped semiconductor layer, the doped semiconductor layer and the current injection layer 19 have opposite conductivity types. In this way, the current limiting layer 14 and the current injection layer 19 can jointly form a Zener diode, which can provide electrostatic protection for the surface emitting laser device Z3.

[0045] The second electrode layer 16 can be electrically connected to the current injection layer 19 via the current propagation layer 17. When a bias is applied to the surface-emitting laser device Z3, a current passes through the current injection layer 19, passes through the boundary hole 14H of the current limiting layer 14, and flows into the active light-emitting layer 12.

[0046] Moreover, in this embodiment, the second reflective layer 13 is disposed on the current propagation layer 17 together with the second electrode layer 16. Furthermore, the second reflective layer 13 is located within the opening 16H defined by the second electrode layer 16. In other words, the second electrode layer 16 in this embodiment surrounds the second reflective layer 13. It is noteworthy that in this embodiment, the material constituting the second reflective layer 13 can include a semiconductor material, an insulating material, or a combination thereof. The present invention is not limited to whether the semiconductor material is an intrinsic semiconductor material or a doped semiconductor material. For example, the semiconductor material can be, for example, silicon, indium gallium aluminum arsenide (InGaAlAs), indium gallium arsenide phosphide (InGaAsP), indium phosphide (InP), indium aluminum arsenide (InAlAs), aluminum gallium arsenide (AlGaAs), aluminum gallium nitride (AlGaN), etc., and can be selected according to the wavelength of the laser beam L. The insulating material can be an oxide or a nitride, such as silicon oxide, titanium oxide, aluminum oxide, etc., the present invention is not limited thereto. For example, there are a number of pairs of film layers that can constitute the second reflective layer 13, and each pair of film layers can be a titanium oxide layer and a silicon oxide layer, a silicon layer and an aluminum oxide layer, or a titanium oxide layer and an aluminum oxide layer, which is determined according to the wavelength of the laser beam L to be generated, the present invention is not limited thereto.

[0047] [Fourth embodiment] Please refer to FIG. 4. FIG. 4 is a schematic cross-sectional view of a surface-emitting laser device according to the fourth embodiment of the present invention. The same components of the surface-emitting laser device Z4 of this embodiment and the surface-emitting laser device Z1 of the first embodiment are given the same numbers, and the same parts will not be described repeatedly. The current limiting layer 14 is located between the active light-emitting layer 12 and the first reflective layer 11. Specifically, in this embodiment, the current limiting layer 14 is embedded in the first reflective layer 11 and connected to the active light-emitting layer 12. In addition, the current limiting layer 14 is Intrinsic Semiconductor Layer and the energy band gap is greater than 0.8 eV and less than 1.4 eV, or greater than 2.3 eV.

[0048] [Fifth embodiment] Please refer to FIG. 5. FIG. 5 is a schematic cross-sectional view of a surface-emitting laser device according to a fifth embodiment of the present invention. The same parts of the surface-emitting laser device Z5 of this embodiment and the surface-emitting laser device Z3 of the third embodiment are given the same numbers, and the same parts will not be described repeatedly. In this embodiment, the current-limiting layer 14 is embedded in the first reflective layer 11, but is not connected to the active light-emitting layer 12. In a more preferred embodiment, the position of the current-limiting structure 14 is closer to the active light-emitting layer 12 and farther from the base 10.

[0049] In addition, the current limiting layer 14 of this embodiment is Intrinsic Semiconductor Layer , a doped semiconductor layer, or a combination thereof. If the current limiting layer 14 is a doped semiconductor layer, the current limiting layer 14 has an opposite conductivity type to that of the first reflective layer 11. For example, if the first reflective layer 11 is N-type, the current limiting layer 14 is P-type. If the first reflective layer 11 is P-type, the current limiting layer 14 is N-type.

[0050] The current limiting layer 14 can divide the first reflective layer 11 into an upper part and a lower part. The upper part is located between the current limiting layer 14 and the active light emitting layer 12, and the lower part is located between the base 10 and the current limiting layer 14. This forms two PN junctions between the current limiting layer 14 and the first reflective layer 11. Furthermore, the current limiting layer 14 and the upper part of the first reflective layer 11 can jointly form a Zener diode, which not only defines an area through which current flows, but also provides electrostatic protection for the surface emitting laser device Z5.

[0051] When a bias is applied to the surface-emitting laser device Z5 through the first electrode layer 15 and the second electrode layer 16, a reverse bias voltage is applied to the Zener diode, but punch-through does not occur. Therefore, the Zener diode does not conduct, and the current bypasses the current limiting layer 14 and passes only through the boundary hole 14H. This increases the current injection density to the active light-emitting layer 12.

[0052] However, when electrostatic discharge occurs, whether the electrostatic current is positive or negative, the Zener diode is conductive, and most of the electrostatic current passes through the current limiting layer 14 and does not pass through the boundary hole 14H. As described above, the area occupancy rate of the current limiting layer 14 in a plan view is larger than the area occupancy rate of the boundary hole 14H in a plan view. When the Zener diode is conductive, the electrostatic current flowing through the active light-emitting layer 12 is dispersed and the current density is reduced. This can prevent damage to the active light-emitting layer 12. Therefore, when the material of the current limiting layer 14 is a doped semiconductor and forms a Zener diode together with the first reflective layer 11, it can not only define a current channel but also provide electrostatic discharge protection for the surface-emitting laser device Z5 and improve reliability.

[0053] In another embodiment, the current limiting layer 14 is Intrinsic Semiconductor Layer or a doped semiconductor layer, Intrinsic Semiconductor Layer may be located between the doped semiconductor layer and the top of the first reflective layer 11 to achieve the above-mentioned effects.

[0054] Please refer to Fig. 6. Fig. 6 is a flow chart of a method for manufacturing a surface emitting laser device according to an embodiment of the present invention. In step S10, a first reflective layer is formed. In step S20, an active light emitting layer is formed on the first reflective layer. In step S30, a current limiting layer is formed on the active light emitting layer. Here, the current limiting layer defines a boundary hole, and the current limiting layer: Intrinsic Semiconductor Layer Alternatively, the semiconductor layer may include a doped semiconductor layer. In step S40, a second reflective layer is formed. In step S50, a first electrode layer and a second electrode layer are formed.

[0055] It should be noted that the manufacturing method of the surface-emitting laser device provided by the embodiment of the present invention can be used to manufacture the surface-emitting laser devices Z1-Z5 in the first to third embodiments. With reference to Fig. 5 to Fig. 10, an example of manufacturing the surface-emitting laser device Z1 of the first embodiment will be described.

[0056] As shown in Fig. 7, a first reflective layer 11 is formed on the base 10. More specifically, the first reflective layer 11 is formed on the epitaxial surface 10a of the base 10. The material of the base 10 is as described above and will not be repeated here. The base 10 may have the same conductivity type as the first reflective layer 11.

[0057] 8, the active light-emitting layer 12 is formed on the first reflective layer 11. The active light-emitting layer 12 can be formed by alternately forming multiple trap layers and multiple barrier layers on the first reflective layer 11. In a specific embodiment, the first reflective layer 11 and the active light-emitting layer 12 can be formed on the epitaxial surface 10a of the base 10 by chemical vapor deposition.

[0058] 9 and 10, detailed steps of forming the current limiting layer 14 on the active light emitting layer 12 are shown. Specifically, an initial semiconductor layer 14A is first formed on the active light emitting layer. The initial semiconductor layer 14A is Intrinsic Semiconductor Layer , a doped semiconductor layer, or a combination thereof. Then, referring to FIG. 10, in this embodiment, a boundary hole 14H may be formed in the initial semiconductor layer 14A to expose a portion of the active light emitting layer 12. Furthermore, the boundary hole 14H may be formed in the initial semiconductor layer 14A through an etching process.

[0059] 11, a second reflective layer 13 is formed on the current limiting layer 14 and the active light-emitting layer 12. Specifically, when the second reflective layer 13 is formed, a part of the second reflective layer 13 is filled in the boundary hole 14H and connected to the active light-emitting layer 12.

[0060] 12, the surface-emitting laser device Z1 of the first embodiment of the present invention can be manufactured by forming a first electrode layer 15 on the bottom surface 10b of the base 10 and forming a second electrode layer 16 on the second reflective layer 13. In this embodiment, before forming the second electrode layer 16, the current propagation layer 17 and the protective layer 18 may be formed first.

[0061] In manufacturing the surface-emitting laser device Z2 of the second embodiment, a part of the second reflective layer 13 may be formed on the active light-emitting layer 12 first, and then the current limiting layer 14 may be formed to have the boundary hole 14H. Next, another part of the second reflective layer 13 is formed on the current limiting layer 14.

[0062] Referring to Fig. 13, this step follows the step of Fig. 10. The manufacturing method of the embodiment of the present invention further includes a step of forming a current injection layer 19 on the current limiting layer 14. In this embodiment, the step of forming the current injection layer 19 is performed before the step of forming the second reflective layer 13. As shown in Fig. 13, the current injection layer 19 is formed in the boundary hole 14H of the current limiting layer 14 and is connected to the active light emitting layer 12. Then, a current propagation layer 17 and a second reflective layer 13 are formed on the current injection layer 19.

[0063] Referring to FIG. 14, the first electrode layer 15 is formed on the bottom surface 10b of the substrate 10, and the second electrode layer 16 is formed on the current propagation layer 17, so that the second electrode layer 16 is electrically connected to the current injection layer 19. The second electrode layer 16 has an opening 16H corresponding to the boundary hole 14H, and is disposed so as to surround the second reflective layer 13. In other words, the second reflective layer 13 is located within the opening 16H defined by the second electrode layer 16. In a specific embodiment, after the current propagation layer 17 is formed, the second reflective layer 13 can be formed first, and then the second electrode layer 16 can be formed. In another embodiment, the steps of forming the second reflective layer 13 and the second electrode layer 16 can be interchanged. By performing the above steps, the surface-emitting laser device Z3 of the third embodiment can be manufactured.

[0064] It should be noted that, in manufacturing the surface-emitting laser device Z4 of the fourth embodiment, the step (S30) of forming the current limiting layer 14 can also be performed before the step (S20) of forming the active light-emitting layer 12. In manufacturing the surface-emitting laser device Z5 of the fifth embodiment, the lower part of the first reflective layer 11 may be formed first, and then the current limiting layer 14 having the boundary hole 14H may be formed. After that, the upper part of the first reflective layer 11 is regrown on the current limiting layer 14.

[0065] [Beneficial Effects of the Embodiments] One beneficial effect of the present invention is that in the surface-emitting laser device and the manufacturing method thereof provided by the present invention, the current limiting layer 14 is a semiconductor layer, and through the technical solution in which the energy band gap is 0.8 eV or more and 1.4 eV or less, or 2.3 eV or more, the internal stress of the surface-emitting laser devices Z1 to Z5 can be reduced, and the surface-emitting laser devices Z1 to Z5 can have better light-emitting efficiency and high reliability.

[0066] More specifically, the first reflective layer 11, the current limiting layer 14, the active light emitting layer 12, and the second reflective layer 13 are all made of semiconductor materials, so that the difference in thermal expansion coefficient is small. This makes it possible to prevent the surface emitting laser devices Z1-Z5 from bursting due to the difference in thermal expansion coefficient after annealing, thereby increasing the manufacturing yield. In addition, by appropriately selecting the semiconductor material of the current limiting layer 14, it is possible to provide a low lattice mismatch between the current limiting layer 14 and the active light emitting layer 12, or between the current limiting layer 14 and the second reflective layer 13, or between the current injection layer 19, thereby reducing the internal stress of the surface emitting laser devices Z1-Z5. This allows the surface emitting laser devices Z1-Z5 to have even higher reliability.

[0067] In the surface-emitting laser devices Z1 to Z5 according to the embodiments of the present invention, since there is no need to use an oxide layer, the step of lateral oxidation can be omitted in the manufacturing process of the surface-emitting laser devices Z1 to Z5. Furthermore, there is no need to form lateral grooves in the surface-emitting laser devices Z1 to Z5 according to the embodiments of the present invention. This further simplifies the manufacturing process of the surface-emitting laser devices Z1 to Z5 and reduces the manufacturing cost. In addition, when performing lateral oxidation, it is possible to prevent the inside of the surface-emitting laser devices Z1 to Z5 from being invaded by water vapor, which would affect the light output characteristics. Therefore, the surface-emitting laser devices Z1-Z5 according to the embodiments of the present invention can have even higher reliability.

[0068] Furthermore, when the current limiting layer 14 forms a Zener diode together with the first reflective layer 11 or the second reflective layer 13, it not only limits the current path but also provides electrostatic discharge protection for the surface emitting laser devices Z1 to Z5.

[0069] The contents disclosed above are merely preferred possible embodiments of the present invention, and do not limit the scope of the claims of the present invention. Therefore, all equivalent technical modifications made based on the contents of the specification and accompanying drawings of the present invention are intended to be included in the scope of the claims of the present invention. [Explanation of symbols]

[0070] Z1-Z5: Surface emitting laser device L: Laser beam 10: Bass 10a: Epitaxial surface 10b: Bottom 11: First reflective layer 12: Active light-emitting layer 13: Second reflective layer 14: Current limiting layer 14H: Boundary Hole 15: First electrode layer 16: Second electrode layer 16H: Opening A1: Light-emitting area 17: Current propagation layer 18:Protective layer 19: Current injection layer 14A: Initial semiconductor layer S10~S50: Step

Claims

1. 1. A surface emitting laser device comprising a first reflective layer, an active light emitting layer, a second reflective layer and a current limiting layer, the active light-emitting layer is located between the first reflective layer and the second reflective layer and configured to generate a laser beam; the current limiting layer is located above or below the active light emitting layer, the current limiting layer is a semiconductor layer, and the energy band gap of the current limiting layer is greater than 0.8 eV and less than 1.4 eV, or greater than 2.3 eV; the current limiting layer is located in the second reflective layer or in the first reflective layer, and when the current limiting layer is located in the second reflective layer, it is not connected to the active light emitting layer, and the current limiting layer is an intrinsic semiconductor layer or has an opposite conductivity type to the second reflective layer; when the current limiting layer is located in the first reflective layer, it is located in the first reflective layer, it is not connected to the active light emitting layer, and the current limiting layer is an intrinsic semiconductor layer or has an opposite conductivity type to the first reflective layer; A surface emitting laser device comprising:

2. 2. The surface-emitting laser device of claim 1, wherein the current limiting layer is located within the second reflective layer, and a lattice mismatch between a material constituting the second reflective layer and the semiconductor layer is less than 0.1%, the thickness of the current limiting layer is at least 30 nm, and the material constituting the current limiting layer is aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), gallium nitride (GaN), aluminum nitride (AlN), indium aluminum phosphide (AlInP), indium gallium phosphide (InGaP), aluminum gallium phosphide (AlGaP), or aluminum gallium arsenide (AlGaAs).

3. 2. The surface emitting laser device according to claim 1, wherein the active light emitting layer is formed by alternately stacking a plurality of trap layers and a plurality of barrier layers, and an energy band gap of the trap layers is smaller than an energy band gap of the current limiting layer.

4. Further comprising a current injection layer; 2. The surface-emitting laser device of claim 1, wherein a portion of the current injection layer is filled in a boundary hole of the current limiting layer, the second reflective layer is located above the current injection layer, the current limiting layer is located within the current injection layer, and the current limiting layer is an intrinsic semiconductor layer or has an opposite conductivity type to that of the current injection layer.

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