Photoresist Underlayer Composition

Abstract

To provide a photoresist underlayer composition.SOLUTION: A method of forming a pattern comprises: providing a photoresist underlayer over a substrate; forming a photoresist layer over the photoresist underlayer; patterning the photoresist layer; and transferring a pattern from the patterned photoresist layer to the photoresist underlayer. The photoresist underlayer is formed from a composition that comprises a polymer that has a specific repeating unit, or a compound represented by formula 1, and a solvent.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present invention relates to the manufacture of electronic devices, and more specifically to materials and compositions for use in semiconductor manufacturing. [Background technology]

[0002] The ongoing shrinking of feature sizes in integrated circuits requires the use of thin photoresist films for good pattern imaging. However, thin photoresist films often lack the etch resistance to withstand pattern transfer to the substrate. To address this issue, the semiconductor industry has switched to using multilayer lithography methods that transfer the resist image to a more robust carbon hardmask underlayer. A typical three-layer scheme consists of a carbon hardmask, a silicon-based antireflective coating (SiARC), and a photoimageable photoresist.

[0003] The pattern in the photoresist is first transferred to a SiARC, then to a hardmask, and finally to the desired substrate. One important criterion for a hardmask is that it must have sufficient etch resistance whatever the etching conditions used for successful pattern transfer. One method to fabricate carbon hardmasks is by chemical vapor deposition (CVD). Although this method produces highly etch-resistant films, it suffers from several drawbacks, including being a relatively slow (inefficient) and costly process. Therefore, the development of solution-processable "spin-on-carbon" (SOC) hardmasks is highly desirable.

[0004] Spin-on-carbon (SOC) compositions are often used to form resist underlayer films in the semiconductor industry, which are used as etch masks for lithography in the latest technology nodes for integrated circuit fabrication. An ideal SOC material should have certain specific characteristics: it should be castable onto a substrate by a spin-coating process; it should be thermally curable upon heating with low outgassing and sublimation; it should be soluble in common solvents for good spin-bowl compatibility; it should have a suitable n / k to work in combination with an anti-reflective coating layer to impart the low reflectivity required for photoresist imaging; it should adhere well to the underlayer, e.g., the substrate, to avoid delamination when immersed during standard cleaning processes, e.g., the SC-1 process using hydrogen peroxide / ammonium hydroxide baths; and / or it should have high thermal stability to avoid damage during subsequent processing steps. Additionally, SOC materials should have the ability to flow materials (called planarization, PL) over the complex topography designs in advanced nodes.

[0005] Thus, there remains a need for advanced photoresist underlayer films / materials that exhibit many of the above-mentioned properties, such as acceptable adhesion to the underlayer / substrate and acceptable planarization, to meet the ever-increasing design requirements in semiconductor manufacturing. [Prior art documents] [Non-patent literature]

[0006] [Non-Patent Document 1] McCutcheon's Emulsifiers and Detergents, North American Edition for the Year 2000 Summary of the Invention [Means for solving the problem]

[0007] A method of forming a pattern is provided, the method comprising: Providing a photoresist underlayer on a substrate; forming a photoresist layer over the photoresist underlayer; patterning a photoresist layer; Transferring a pattern from the patterned photoresist layer to an underlying photoresist layer; the photoresist underlayer comprises a solvent and a compound represented by formula 1 [ka] or Polymer having a repeating unit represented by formula 2 [ka] formed from a composition comprising In formulas 1 and 2, Ar1 and Ar2 independently represent an aromatic group; Each Y and each Y are independently -OH, -SH, -C(O)OH, -NH, -R A , -OR A , -C(O)OR A , -SR A , or -NHR A wherein y1 and y2 are independently an integer of 0 to 6; R A are independently substituted or unsubstituted C1-C 18 Alkyl, substituted or unsubstituted C3-C 12 Cycloalkyl, substituted or unsubstituted C3-C 12 Heterocycloalkyl, substituted or unsubstituted C 2~18 Alkenyl, substituted or unsubstituted C 3~8 Alkynyl, substituted or unsubstituted C6-C 14 Aryl, or substituted or unsubstituted C6-C 14 is heteroaryl; X1 and X2 are independently a single bond or a divalent linking group; X3 is a divalent linking group; Z1 and Z2 are independently -OR A, -C(O)OR A , -SR A , -NHR A , -OC(O)CR B =CH2, substituted or unsubstituted C 1~18 Alkyl group, substituted or unsubstituted C 1~18 Alkoxy group, substituted or unsubstituted C 3~12 Cycloalkyl group, substituted or unsubstituted C 3~12 Heterocycloalkyl group, substituted or unsubstituted C 3~12 Glycidyl group, substituted or unsubstituted C 2~18 Alkenyl group, substituted or unsubstituted C 5~12 Cycloalkenyl group, substituted or unsubstituted C 3~18 Alkynyl group, substituted or unsubstituted C 6~14 Aryl group, or substituted or unsubstituted C 3~44 Heteroaryl, R B is hydrogen, fluorine, or substituted or unsubstituted C 1~5 is alkyl; T1 and T2 are independently a divalent linking group; z1 and z2 are independently an integer from 0 to 6, or an integer from 0 to 3, and for compounds of formula 1, z1+y1 is at least 1 and z2+y2 is at least 1; t1 and t2 are each independently an integer of 0 to 6, or an integer of 0 to 3.

[0008] A photoresist underlayer composition as described above is also provided.

[0009] Also provided is a substrate comprising a layer of the above-described photoresist underlayer composition disposed on a substrate, and a photoresist layer disposed over the layer of photoresist underlayer composition. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in this description. In this regard, the exemplary embodiments may have different forms and should not be construed as being limited to the description set forth herein. Accordingly, exemplary embodiments are described below by referring to the figures only to describe aspects of the present description. As used herein, the term "and / or" encompasses all combinations of one or more of the associated listed items. A phrase such as "at least one of," when preceding a list of elements, modifies the entire list of elements and does not modify each individual element of the list.

[0011] As used herein, the terms "a," "an," and "the" do not denote limitations of quantity and should be construed to include both the singular and the plural, unless otherwise indicated herein or clearly contradicted by context. "Or" means "and / or," unless otherwise stated. All ranges disclosed herein are inclusive of the endpoints, which are independent and combinable with each other. The suffix "(s)" is intended to include both the singular and the plural of the term it modifies, thereby including at least one of that term. "Optional" or "optionally" means that the subsequently described event or circumstance may or may not occur, and that the description includes instances when the event occurs and instances when the event does not occur. The terms "first," "second," and the like, are used herein not to denote order, quantity, or importance, but rather to distinguish one element from another. When an element is said to be "on" another element, it may be in direct contact with the other element, or intervening elements may be present between them. In contrast, when an element is said to be "directly on" another element, there are no intervening elements present. It should be understood that the described components, elements, limitations and / or features of the embodiments can be combined in any suitable manner in the various embodiments.

[0012] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted to have a meaning consistent with their meaning in the context of the relevant technical field and this disclosure, and will be further understood not to be interpreted in an ideal or overly formal sense unless expressly defined in this specification.

[0013] As used herein, the term "hydrocarbon" refers to an organic compound or group having at least one carbon atom and at least one hydrogen atom, optionally containing an aromatic group and / or one or more heteroatoms, and may be optionally substituted with one or more substituents, where indicated; "alkyl group" refers to a straight or branched chain saturated hydrocarbon having the specified number of carbon atoms and which is monovalent; "alkylene group" refers to a divalent alkyl group; "hydroxyalkyl group" refers to an alkyl group substituted with at least one hydroxyl group (-OH); "alkoxy group" refers to "alkyl-O-"; and "carboxylic acid group" refers to a group of the formula "cycloalkyl group" refers to a monovalent group having one or more saturated rings in which all ring members are carbon; "cycloalkylene group" refers to a divalent cycloalkyl group; "alkenyl group" refers to a straight- or branched-chain monovalent hydrocarbon group having at least one carbon-carbon double bond; "alkenoxy group" refers to "alkenyl-O-"; "alkenylene group" refers to at least a divalent alkenyl group; "cycloalkenyl group" refers to a cycloalkyl group having at least one carbon-carbon double bond; and "alkynyl group" refers to a monovalent hydrocarbon group having at least one carbon-carbon triple bond.

[0014] The term "aromatic group" as used herein refers to the conventional concept of aromaticity as defined in the literature, particularly IUPAC19, and refers to a monocyclic or polycyclic aromatic ring or ring system containing carbon atoms in the ring, and optionally containing one or more heteroatoms independently selected from N, O, and S in place of carbon atoms in the ring. Exemplary aromatic groups can include aromatic ring systems having 1 to 6 aromatic rings, independently substituted or unsubstituted. When an aromatic group contains 2 to 6 aromatic rings, two or more of the aromatic rings can be linked by a single bond or a divalent linking group, or two or more of the aromatic rings can be fused aromatic rings. A polycyclic aromatic ring system contains at least one ring that is an aromatic hydrocarbyl group, and the other rings can be, for example, cycloalkyl, cycloalkenyl, aryl, heterocyclic, and / or heteroaryl. Preferred aromatic groups are aromatic groups containing 6 to 30 carbon atoms, 6 to 20 carbon atoms, or 6 to 12 carbon atoms. Exemplary aromatic groups include phenyl, biphenyl, triphenyl, triphenylene, tetraphenylene, naphthalene, anthracene, phenalene, phenanthrene, fluorene, pyrene, chrysene, perylene, and azulene. Examples of aromatic groups containing one or more heteroatoms include dibenzothiophene, dibenzofuran, furan, thiophene, benzofuran, benzothiophene, carbazole, indolocarbazole, pyridyl indole, pyrazole, imidazole, triazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, indole, benzimidazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, or xanthene.

[0015] As used herein, the term "aryl group" refers to a monovalent monocyclic or polycyclic aromatic group containing only carbon atoms in the aromatic ring, which may include groups having an aromatic ring fused to at least one cycloalkyl or heterocycloalkyl ring; an "arylene group" refers to an at least divalent aryl group; an "alkylaryl group" refers to an aryl group substituted with an alkyl group; an "arylalkyl group" refers to an alkyl group substituted with an aryl group; an "aryloxy group" refers to "aryl-O-"; and an "arylthio group" refers to "aryl-S-".

[0016] The prefix "hetero" means that the compound or group contains at least one ring atom that is a heteroatom (e.g., 1, 2, 3, or more than 4 heteroatoms) in place of a carbon atom, where each heteroatom is independently selected from N, O, S, Si, or P; a "heteroatom-containing group" refers to a substituent that contains at least one heteroatom; a "heteroalkyl group" refers to an alkyl group having 1 to 4 heteroatoms in place of carbon atoms; a "heterocycloalkyl group" refers to a cycloalkyl group having one or more N, O, or S atoms in place of carbon atoms; a "heterocycloalkylene group" refers to a heterocycloalkyl group having a valence of at least 2; a "heteroaryl group" refers to an aryl group having 1 to 3 separate or fused rings having one or more N, O, or S ring atoms in place of carbon atoms; and a "heteroarylene group" refers to a heteroaryl group having a valence of at least 2.

[0017] The symbol "*" represents a binding site (ie, a connection point).

[0018] "Substituted" or "substituent" means that at least one hydrogen atom on a group has been replaced with another group, provided that the normal valence of the designated atom is not exceeded. When the substituent is oxo (i.e., =O), two hydrogens on a carbon atom are replaced. Combinations of two or more substituents or variables are permitted. For example, the term "substituted" may refer to a referenced hydrocarbon moiety having two, three, or four of the same or different substituents. Exemplary groups that may be present in a "substituted" position include nitro (-NO2), cyano (-CN), hydroxyl (-OH), oxo (=O), amino (-NH2), mono- or di-(C 1~6 ) Alkylamino, alkanoyl (acyl, etc.) 2~6 alkanoyl group, etc.), formyl (-C(=O)H), carboxylic acid or its alkali metal salt or ammonium salt, C 2~6 Alkyl esters (-C(=O)O-alkyl or -OC(=O)-alkyl), C 7~13 Aryl esters (-C(=O)O-aryl or -OC(=O)-aryl), amides -(C(=O)NR2, where R is hydrogen or C 1~6 alkyl), carboxamide (-CH2C(=O)NR2, where R is hydrogen or C 1~6 alkyl), halogen, thiol (-SH), C 1~6 Alkylthio (-S-alkyl), thiocyano (-SCN), C 1~6 Alkyl, C 2~6 Alkenyl, C 2~6 Alkynyl, C 1~6 Haloalkyl, C 1~9 Alkoxy, C 1~6 Haloalkoxy, C 3~12 Cycloalkyl, C 5~18 Cycloalkenyl, C having at least one aromatic ring (e.g., phenyl, biphenyl, naphthyl, etc., each ring being substituted or unsubstituted aromatic). 6~12 Aryl, C having 1-3 separate or fused rings and 6-18 ring carbon atoms 7~19 Arylalkyl, arylalkoxy having 1-3 separate or fused rings and 6-18 ring carbon atoms, C 7~12Alkylaryl, C 4~12 Heterocycloalkyl, C 3~12 Heteroaryl, C 1~6 Alkylsulfonyl (-S(=O)2-alkyl), C 6~12 Examples of such radicals include, but are not limited to, arylsulfonyl (-S(=O)2-aryl), or tosyl (CH3C6H4SO2-). If a group is substituted, the indicated number of carbon atoms is the total number of carbon atoms in the group, excluding the carbon atoms of any substituents. For example, the group -CH2CH2CN is a C2 alkyl group substituted with a cyano group.

[0019] The terms "polymer" and "polymeric" as used herein refer to a polymer-based material that includes one or more repeat units, which may be the same or different from each other. Thus, the disclosed polymers and polymer-based materials of the present invention may be referred to herein as "polymers" or "copolymers". It should be further understood that the terms "polymer" and "polymeric" further include oligomers. As used herein, each of the one or more different repeat units is present at least twice in the polymer-based material. In other words, a polymer-based material that includes one repeat unit includes a first repeat unit that is present in two or more amounts, for example, the polymer-based material includes at least two different repeat units, for example, a first repeat unit and a second repeat unit, each of which is present in two or more amounts.

[0020] In this specification, unless otherwise defined, a "divalent linking group" is -O-, -S-, -Te-, -Se-, -C(O)-, -N(R N )-, -C(O)NR N -, -S(O)-, -S(O)2-, -C(S)-, -C(Te)-, -C(Se)-, substituted or unsubstituted C 1~30 Alkylene, substituted or unsubstituted C 3~30 Cycloalkylene, substituted or unsubstituted C 1~30 Heterocycloalkylene, substituted or unsubstituted C 6~30 Arylene, substituted or unsubstituted C 7~30Aryl alkylene, substituted or unsubstituted C 1~30 Heteroarylene, substituted or unsubstituted C 3~30 R refers to a divalent group containing one or more of: N is hydrogen, substituted or unsubstituted C 1~20 Alkyl, substituted or unsubstituted C 1~20 Heteroalkyl, substituted or unsubstituted C 6~30 Aryl, or substituted or unsubstituted C 4~30 More typically, the divalent linking group is -O-, -S-, -C(O)-, -N(R N )-, -S(O)-, -S(O)2-, substituted or unsubstituted C 1~30 Alkylene, substituted or unsubstituted C 3~30 Cycloalkylene, substituted or unsubstituted C 1~30 Heterocycloalkylene, substituted or unsubstituted C 6~30 Arylene, substituted or unsubstituted C 7~30 Aryl alkylene, substituted or unsubstituted C 1~30 Heteroarylene, substituted or unsubstituted C 3~30 The term "divalent linking group" in reference to X3, T1, and T2 also refers to one or more of the divalent linking groups expressly described and claimed herein.

[0021] Organic underlayer films can be used to protect the underlying substrate during various pattern transfer and etching processes. Often these films are cast and cured directly onto an inorganic substrate (e.g., TiN). In these cases, it is desirable for the underlayer film to adhere well enough to the substrate during all subsequent processing steps to protect the substrate from processing conditions that would otherwise be damaging. One commonly used processing step is a wet etch process known as SC-1, which involves immersing the substrate in a hydrogen peroxide / ammonium hydroxide bath. Underlayer films that are not well adhered to the substrate can delaminate while they are immersed, exposing the underlying inorganic substrate and causing damage.

[0022] If the underlayer or substrate contains varying pitches, varying line / space patterns, and / or varying trench depths, it is also desirable for the underlayer film to have sufficient planarizing properties to provide a relatively flat upper surface for the film, see Table 3 in PL evaluation below.

[0023] In one embodiment, a composition is provided that can be applied to an underlayer or substrate to form a film layer on the substrate, i.e., a photoresist underlayer. In one aspect, the photoresist underlayer composition comprises a compound of Formula 1 or a polymer comprising a repeat unit represented by Formula 2, and a solvent.

[0024] In one embodiment, a method of forming a pattern is provided, the method comprising: Providing a photoresist underlayer on a substrate; forming a photoresist layer over the photoresist underlayer; patterning a photoresist layer; Transferring a pattern from the patterned photoresist layer to an underlying photoresist layer; the photoresist underlayer comprises a solvent and a compound represented by formula 1 [ka] or Polymer having a repeating unit represented by formula 2 [ka] formed from a composition comprising In formulas 1 and 2, Ar1 and Ar2 independently represent an aromatic group; Each Y and each Y are independently -OH, -SH, -C(O)OH, -NH, -R A , -OR A , -C(O)OR A , -SR A , or -NHR Awherein y1 and y2 are independently an integer of 0 to 6; R A are independently substituted or unsubstituted C1-C 18 Alkyl, substituted or unsubstituted C3-C 12 Cycloalkyl, substituted or unsubstituted C3-C 12 Heterocycloalkyl, substituted or unsubstituted C 2~18 Alkenyl, substituted or unsubstituted C 3~8 Alkynyl, substituted or unsubstituted C6-C 14 Aryl, or substituted or unsubstituted C6-C 14 is heteroaryl; X1 and X2 are independently a single bond or a divalent linking group; X3 is a divalent linking group; Z1 and Z2 are independently -OR A , -C(O)OR A , -SR A , -NHR A , -OC(O)CR B =CH2, substituted or unsubstituted C 1~18 Alkyl group, substituted or unsubstituted C 1~18 Alkoxy group, substituted or unsubstituted C 3~12 Cycloalkyl group, substituted or unsubstituted C 3~12 Heterocycloalkyl group, substituted or unsubstituted C 3~12 Glycidyl group, substituted or unsubstituted C 2~18 Alkenyl group, substituted or unsubstituted C 5~12 Cycloalkenyl group, substituted or unsubstituted C 3~18 Alkynyl group, substituted or unsubstituted C 6~14 Aryl group, or substituted or unsubstituted C 3~44 Heteroaryl, R B is hydrogen, fluorine, or substituted or unsubstituted C 1~5 is alkyl; T1 and T2 are independently a divalent linking group; z1 and z2 are independently an integer from 0 to 6, or an integer from 0 to 3, and for compounds of formula 1, z1+y1 is at least 1 and z2+y2 is at least 1; t1 and t2 are each independently an integer of 0 to 6, or an integer of 0 to 3.

[0025] In one aspect, Ar1 and Ar2 are independently monocyclic or polycyclic aromatic groups. When the group is polycyclic, the rings can be fused (such as naphthyl, anthracenyl, pyrenyl, etc.), directly bonded (such as biphenyl), or bridged by a heteroatom (such as triphenylamino or diphenylene ether). In one embodiment, the polycyclic aromatic group can include a combination of fused and directly bonded rings (such as the bond of two naphthylenes).

[0026] In one aspect, Ar1 and Ar2 are independently an aromatic group having 5 to 20 ring carbons, or 5 to 16 ring carbons, and optionally containing 1 to 4 ring heteroatoms selected from N, O, or S.

[0027] It is further understood that any one or more ring carbons of Ar1 and Ar2 may be independently substituted as defined herein, for example, 1 to 10 ring carbons of Ar1 and Ar2 may be substituted with any substituent as defined herein.

[0028] In one aspect, a list of exemplary substituents includes, but is not limited to, substituted or unsubstituted C 1~10 Alkyl, substituted or unsubstituted C 1~10 Alkoxy, substituted or unsubstituted C 1~10 Haloalkyl, substituted or unsubstituted C 4~6 Cycloalkyl, substituted or unsubstituted C 3~5 Heterocycloalkyl, substituted or unsubstituted C 2~10 Alkenyl, substituted or unsubstituted C 2~10 Alkynyl, substituted or unsubstituted C 6~14 Aryl, substituted or unsubstituted C 6~18 Aryloxy, substituted or unsubstituted C 7~14 Aryl alkyl, substituted or unsubstituted C 7~14 Alkylaryl, substituted or unsubstituted C 3~14Heteroaryl, halogen, -CN, -NO2, -CO2R 4 (R 4 is H, -OH, or C 1~6 alkyl).

[0029] In one embodiment, Ar1 and Ar2 of formula 1 or 2 are independently an aromatic group of formula A or formula B, or Ar1 and Ar2 of formula 1 or 2 independently represent an aromatic group in which a group of formula A is directly bonded to the same or different group of formula A, or a group of formula B is directly bonded to the same or different group of formula B, or a group of formula A is directly bonded to a group of formula B. [ka] (In Formulas A and B, A is CR C or N and R C is hydrogen, substituted or unsubstituted C 1~10 Alkyl, substituted or unsubstituted C 1~10 Alkoxy, or substituted or unsubstituted C 6~12 Aryl, or substituted or unsubstituted C 6~12 is heteroaryl; Ring B represents a fused aromatic group having 1 to 4 aromatic rings; Each V and each W represents an optionally substituted ring carbon as defined herein, j is an integer from 0 to 6, and k is an integer from 0 to 2. Exemplary substituents for V and W include, but are not limited to, -OH, -SH, -C(O)OH, -NH2, -R A , -OR A , -C(O)OR A , -SR A , or -NHR A R A is as defined above.

[0030] In one embodiment, Ar1 and Ar2 in formulas 1 and 2 are independently substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthracenyl, substituted or unsubstituted pyrenyl, substituted or unsubstituted pyridinyl, substituted or unsubstituted quinolinyl, substituted or unsubstituted biphenylene, substituted or unsubstituted triphenylene, substituted or unsubstituted fluorenyl, or substituted or unsubstituted carbazolyl.

[0031] In one embodiment, Z1 and Z2 in formula 1 are independently represented by [ka] (In formula 1, * represents the point of attachment to X1 or X2, or, if X1 or X2 is a single bond, the point of attachment to a ring carbon of Ar1 or Ar2, respectively; R is hydrogen, substituted or unsubstituted C 1~22 Alkyl, substituted or unsubstituted C 3~14 Cycloalkyl, substituted or unsubstituted C 1~22 Heteroalkyl, substituted or unsubstituted C 2~14 Heterocycloalkyl, substituted or unsubstituted C 6~24 Aryl, or substituted or unsubstituted C 3~24 (heteroaryl).

[0032] In one aspect, the divalent linking group X3, and, if present, T1 and / or T2, are independently -O-, -S-, -C(O)-, -S(O)2-, substituted or unsubstituted C 1~8 Alkylene, substituted or unsubstituted C 3~10 Cycloalkylene, substituted or unsubstituted C 2~10 Heterocycloalkylene, substituted or unsubstituted C 6~14 Arylene, substituted or unsubstituted C 3~10 heteroarylene, or a combination thereof.

[0033] In one aspect, the divalent linking group X3, and, if present, the divalent linking groups T1 and / or T2, of the repeat unit of formula 2, are independently -O-, -S-, -C(O)-, or [ka] is a radical moiety of In these formulas: R D is a single bond, -C(O)-, -S(O)2-, substituted or unsubstituted C 1~6 Alkylene, substituted or unsubstituted C 3~14 Cycloalkylene, substituted or unsubstituted C 1~22 Heteroalkylene, substituted or unsubstituted C 6~24 Arylene, substituted or unsubstituted C 3~24 heteroarylene, or a combination thereof; R E is a substituted or unsubstituted C 1~6 Alkylene, substituted or unsubstituted C 3~14 Cycloalkylene, substituted or unsubstituted C 1~22 Heteroalkylene, substituted or unsubstituted C 6~24 Arylene, substituted or unsubstituted C 3~24 heteroarylene, or a combination thereof; W and W 1 are independently -O-, substituted or unsubstituted C 1~4 Alkylene, e.g. -CR j R k -, substituted or unsubstituted C 6~22 Arylene, or substituted or unsubstituted C 3~22 heteroarylene, or a combination thereof; R j and R k are independently hydrogen, substituted or unsubstituted C 1~18 Alkyl, substituted or unsubstituted C 6~22 Aryl, or substituted or unsubstituted C 3~22 is heteroaryl, Ar 4 and Ar 5 are independently substituted or unsubstituted C 6~14Arylene, or substituted or unsubstituted C 3~14 Heteroarylene, Z is absent, O, -S-, -C(O)-, substituted or unsubstituted C 1~4 is alkylene, m is 0, 1, or 2; n is 0 or 1; * represents the connection point of the divalent linking group.

[0034] In one embodiment, the photoresist underlayer composition further comprises a compound containing an epoxy group or a polymer containing an epoxy group.

[0035] In one embodiment, the compound containing an epoxy group can be represented by one of the following compounds: [ka] k is 1, 2, 3, or 4 and each h is 0, 1, or 2; T is a single bond, -O-, -S-, -C(O)-, substituted or unsubstituted C 1~4 Alkylene, or -NR 2 - and R 2 is H, substituted or unsubstituted C 1~4 Alkyl, or substituted or unsubstituted C 6~10 (aryl).

[0036] In one embodiment, the polymer having the repeat unit represented by formula 2 can include one or more additional repeat units derived from monomeric compounds known in the art, thus providing a copolymer of two or more, e.g., 3 to 6 or more, different repeat units including the repeat unit represented by formula 2.

[0037] A photoresist underlayer composition may comprise a compound of Formula 1 and one or more polymers. For example, the photoresist underlayer composition may further comprise one or more polymers selected from, for example, polyacrylates, polyvinyl ethers, polyesters, polynorbornenes, polyacetals, polyethylene glycols, polyamides, polyacrylamides, polyphenols, novolacs, styrenic polymers, polyvinyl alcohols, copolymers thereof, or combinations thereof, but is not limited by the above exemplary list.

[0038] The photoresist underlayer composition can include a polymer having repeating units represented by Formula 2 and one or more additional polymers. For example, the one or more polymers can be selected from polyacrylates, polyvinyl ethers, polyesters, polynorbornenes, polyacetals, polyethylene glycols, polyamides, polyacrylamides, polyphenols, novolacs, styrenic polymers, polyvinyl alcohols, copolymers thereof, or combinations thereof, but are not limited by the above exemplary list.

[0039] In one embodiment, the photoresist underlayer composition further comprises a polymer derived from a monomer of Formula 4. The polymer of Formula 4 comprises a side chain having a hydroxy group or a glycidyl group. [ka] (In the formula, L2 is a divalent linking group; J is a substituted or unsubstituted C1-C 10 Substituted or unsubstituted C3-C with alkyl group, hydroxy group or glycidyl group 10 Substituted or unsubstituted C having a cycloalkyl group, a hydroxyl group or a glycidyl group 6~24 Substituted or unsubstituted C having an aryl group, a hydroxy group or a glycidyl group 3~24 is a heteroaryl group; R Pis hydrogen, fluorine, or optionally substituted C 1~5 (It is alkyl).

[0040] In one embodiment, the photoresist underlayer composition further comprises a polymer comprising a repeat unit represented by formula 5: [ka] (In formula 5, Ring A represents an aromatic group; Y is a divalent linking group; and o is an integer from 1 to 8.

[0041] In one embodiment, the photoresist underlayer composition may further comprise one or more polymers having one or more of the following catechol repeat units: [ka] (In the above polymer, D is substituted or unsubstituted C 1~4 Alkylene, e.g. -CR D R E -, substituted or unsubstituted C 6~22 Arylene, or substituted or unsubstituted C 3~22 heteroarylene, or a combination thereof; R D and R E are independently hydrogen, substituted or unsubstituted C 1~18 Alkyl, substituted or unsubstituted C 6~22 Aryl, or substituted or unsubstituted C 3~22 is heteroaryl, where u is an integer from 0 to 3, v is an integer from 0 to 3, and u+v is 1 or more.

[0042] In one embodiment, the photoresist underlayer composition can include a copolymer having a repeat unit of Formula 2 and a repeat unit of Formula 5.

[0043] In one embodiment, the compound of formula 1 is represented by: [ka] .

[0044] In one embodiment, the polymer having a repeat unit of formula 2 is: [ka] or Represented by a repeating unit of formula 2, wherein: y1 and y2 are independently 0, 1, 2, or 3, y1+y2 is at least 1, and each Y1 and each Y2 are independently -OH, -SH, -C(O)OH, -NH2, R A , -OR A , -C(O)OR A , -SR A , or -NHR A and R A are independently substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C3-C6 heterocycloalkyl, or substituted or unsubstituted C6-C 14 is aryl; X3, T1, and T2 are independently an aromatic group having 1 to 3 aromatic rings, and / or [ka] Includes; W and W 1 are independently substituted or unsubstituted C 1~4 alkylene, -O-, or combinations thereof; Ar 4 and Ar 5 are independently substituted or unsubstituted C 6~14 Arylene or substituted or unsubstituted C 3~14 is heteroarylene; Z is absent, O, -S-, -C(O)-, substituted or unsubstituted C 1~4 is alkylene; m is 0, 1, or 2; n is 0 or 1; * represents the attachment point of a divalent linking group; t1 and t2 are independently 0, 1, or 2.

[0045] In one embodiment, X3, and, if present, T1 and / or T2, of the polymer having repeating units of formula 2 are divalent linking groups comprising an aromatic group. For example, the divalent aromatic group of X3 can comprise an aromatic ring system having 1 to 6, e.g., 1 to 3, aromatic rings that are independently substituted or unsubstituted. When the aromatic group comprises 2 to 6 aromatic rings, two or more of the aromatic rings can be linked by a single bond or a divalent linking group, or the two or more aromatic rings can be fused aromatic rings.

[0046] In one aspect, in a polymer having a repeat unit of formula 2, y1 and y2 are independently 0, 1, 2, or 3, and each Y1 and each Y2 are independently -OH, -SH, -C(O)OH, -NH2, -OR A , -C(O)OR A , -SR A , or -NHR A and R A are independently substituted or unsubstituted C1-C6 alkyl, substituted or unsubstituted C3-C6 heterocycloalkyl, or substituted or unsubstituted C6-C 14 It is aryl.

[0047] In one embodiment, in a polymer having a repeat unit of formula 2, at least one T1 and / or at least one T2, i.e., t1+t2 is 1 or greater (e.g., t1+t2 is an integer of 1, 2, or 3). T1 and T2 represent branches in the polymer having a repeat unit of formula 2, and each T1 or each T2 may be the same or different, depending on the presence of additives used in the preparation of the polymer.

[0048] As discussed above, compositions, such as resist underlayer compositions, can include a compound represented by Formula 1 (hereinafter "compound of Formula 1"). The compound of Formula 1 can be the only compound combined with solvent in the photoresist underlayer composition. In another embodiment, the compound of Formula 1 is present in the photoresist underlayer composition in an amount of 5 to 95% by weight, based on the total solids content of the composition. For example, the compound of Formula 1 is present in the photoresist underlayer composition in an amount of 20 to 80% by weight, 30 to 80% by weight, 40 to 80% by weight, or 50 to 75% by weight, based on the total solids content of the composition.

[0049] As discussed above, compositions, such as resist underlayer compositions, can include a polymer having a repeat unit represented by Formula 2 (hereinafter sometimes referred to as a "polymer of Formula 2"). The polymer of Formula 2 can be the only polymer combined with solvent in the photoresist underlayer composition. In another embodiment, the polymer of Formula 2 is present in the photoresist underlayer composition along with one or more additional polymers in an amount of 5 to 95% by weight, based on the total solids content of the composition. For example, the polymer of Formula 2 is present in the resist underlayer composition in an amount of 20 to 80% by weight, 30 to 80% by weight, 40 to 80% by weight, or 50 to 75% by weight, based on the total solids content of the composition.

[0050] In one embodiment, the polymer having the repeat unit of formula 2 has a weight average molecular weight (M) of 1,000 to 80,000 grams / mole (g / mol), 1,000 to 20,000 g / mol, or 1,000 to 8,000 g / mol. w ), or a number average molecular weight (M n ) may have a molecular weight (M w Or M n ) is suitably determined by gel permeation chromatography (GPC) using polystyrene standards.

[0051] In some embodiments, the photoresist underlayer composition may further include one or more hardeners to aid in hardening of the photoresist underlayer composition, for example, after the photoresist underlayer composition has been applied to the surface. A hardener is any component that causes hardening of the photoresist underlayer composition on the surface of a substrate. The amount of such hardener useful in the present composition may be, for example, 0-10 wt %, typically 0-3 wt %, based on the total solids content of the photoresist underlayer composition.

[0052] It may be beneficial to include an acid generator compound, such as a photoacid generator (PAG) and / or a thermal acid generator (TAG) compound or polymer, in the photoresist underlayer composition. Preferred hardeners are thermal acid generators (TAGs).

[0053] TAG compound is any compound that releases acid when exposed to heat.Exemplary thermal acid generators include, but are not limited to, amine-blocked strong acids, for example, amine-blocked sulfonic acids such as amine-blocked dodecylbenzenesulfonic acid.It will also be appreciated by those skilled in the art that certain photoacid generators can release acid when heated and can function as thermal acid generators.

[0054] In some embodiments, the photoresist underlayer composition does not include a photoacid generator or a thermal acid generator, and thus the photoresist underlayer composition may be substantially free of PAG or TAG compounds and / or PAG or TAG polymers.

[0055] The photoresist underlayer composition can include one or more optional additives including, for example, surfactants, antioxidants, and the like, or combinations thereof. When present, each optional additive can be used in the photoresist underlayer composition in small amounts, such as from 0.01 to 10 weight percent, based on the total solids content of the photoresist underlayer composition.

[0056] Exemplary surfactants include those that exhibit amphiphilic properties, meaning that they may be both hydrophilic and hydrophobic at the same time. Amphiphilic surfactants have a hydrophilic head group that has a strong affinity for water and a long hydrophobic tail that is organophilic and repels water. Suitable surfactants may be ionic (i.e., anionic, cationic) or nonionic. Further examples of surfactants include silicone surfactants, poly(alkylene oxide) surfactants, and fluorochemical surfactants. Suitable nonionic surfactants include, but are not limited to, octyl and nonyl phenol ethoxylates such as TRITON X-114, X-100, X-45, X-15, and branched secondary alcohol ethoxylates such as TERGITOL TMN-6 (The Dow Chemical Company, Midland, Mich. USA). Still further exemplary surfactants include alcohol (primary and secondary) ethoxylates, amine ethoxylates, glucosides, glucamines, polyethylene glycols, poly(ethylene glycol-co-propylene glycol), or other surfactants disclosed in (Non-Patent Document 1) published by Manufacturers Confectioners Publishing Co., Glen Rock, NJ. Non-ionic surfactants that are acetylenic diol derivatives may also be suitable. Such surfactants are commercially available from Air Products and Chemicals, Inc., Allentown, Pa., and sold under the trade names SURFYNOL and DYNOL. Additional suitable surfactants include other polymeric compounds such as triblock EO-PO-EO copolymers PLURONIC 25R2, L121, L123, L31, L81, L101, and P123 (BASF, Inc.).

[0057] The photoresist underlayer composition includes a solvent. The solvent component may be a single solvent or may include a mixture of two or more separate solvents. Preferably, each of the solvents may be miscible with each other. Suitable solvents include, for example, one or more oxyisobutyric acid esters, particularly methyl-2-hydroxyisobutyric acid, 2-hydroxyisobutyric acid, and ethyl lactate; one or more glycol ethers, particularly 2-methoxyethyl ether (diglyme), ethylene glycol monomethyl ether, and propylene glycol monomethyl ether; one or more solvents having both ether and hydroxyl moieties, particularly methoxybutanol, ethoxybutanol, methoxypropanol, and ethoxypropanol; one or more alkyl esters, particularly methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, and dipropylene glycol monomethyl ether acetate, as well as other solvents such as one or more dibasic esters; and / or one or more propylene carbonates and other solvents such as gamma butyrolactone.

[0058] The desired total solids content of the photoresist underlayer composition will depend on factors such as the desired final layer thickness. Typically, the total solids content of the photoresist underlayer composition can be from 0.1 to 20 weight percent, such as from 0.1 to 10 weight percent, more typically from 0.11 to 5 weight percent, based on the total weight of the coating composition.

[0059] The photoresist underlayer composition can be prepared according to known procedures. The photoresist underlayer composition can be used as is or can be purified or diluted before being coated onto a substrate. Purification can include, for example, one or more of centrifugation, filtration, distillation, decantation, evaporation, treatment with ion exchange beads, and the like.

[0060] The patterning method of the present invention includes applying a layer of a photoresist underlayer composition on a substrate; curing the applied photoresist underlayer composition to form a coated underlayer; and forming a photoresist layer on the coated underlayer. The method may further include exposing the photoresist layer to activating radiation in a patternwise manner; and developing the exposed photoresist layer to obtain a resist relief image. In some embodiments, the method may further include forming a silicon-containing layer, an organic antireflective coating layer, or a combination thereof on the coated underlayer before forming the photoresist layer. In some embodiments, the method may further include transferring a pattern to the silicon-containing layer, the organic antireflective coating layer, or a combination thereof after developing the exposed photoresist layer and before transferring the pattern to the coated underlayer.

[0061] A wide variety of substrates may be used in the patterning method, with electronic device substrates being typical. Suitable substrates include, for example, packaging substrates such as multichip modules, flat panel display substrates, integrated circuit substrates, substrates for light emitting diodes (LEDs) such as organic light emitting diodes (OLEDs), semiconductor wafers, polycrystalline silicon substrates, and the like. Suitable substrates may be in the form of wafers such as those used in the manufacture of integrated circuits, optical sensors, flat panel displays, optical integrated circuits, and LEDs. As used herein, the term "semiconductor wafer" is intended to encompass "electronic device substrates," "semiconductor substrates," "semiconductor devices," and various packages for various levels of interconnection, such as single chip wafers, multiple chip wafers, packages for various levels, or other assemblies requiring solder connections. Such substrates may be of any suitable size. A typical wafer substrate diameter is 200 mm to 300 mm, although wafers having smaller and larger diameters may be suitably used in accordance with the present invention. As used herein, the term "semiconductor substrate" includes any substrate having one or more semiconductor layers or structures that may optionally include active or operable portions of a semiconductor device. By semiconductor device is meant a semiconductor substrate upon which at least one microelectronic device has been or is being batch fabricated.

[0062] The substrate is typically composed of one or more of silicon, polysilicon, silicon oxide, silicon nitride, silicon oxynitride, silicon germanium, gallium arsenide, aluminum, sapphire, tungsten, titanium, titanium-tungsten, nickel, copper, and gold. The substrate may include one or more layers and patterned features. The layers may include, for example, aluminum, copper, molybdenum, tantalum, titanium, tungsten, alloys of such metals, nitrides or silicides, one or more conductive layers such as layers of doped amorphous silicon or doped polysilicon, one or more dielectric layers such as layers of silicon oxide, silicon nitride, silicon oxynitride, or metal oxides, semiconductor layers such as single crystal silicon, and combinations thereof. In some embodiments, the substrate comprises titanium nitride. The layers can be formed by a variety of techniques, such as chemical vapor deposition (CVD), such as plasma enhanced CVD (PECVD), low pressure CVD (LPCVD) or epitaxial growth, physical vapor deposition (PVD), such as sputtering or evaporation, or electroplating.

[0063] In certain patterning methods of the present invention, it may be desirable to provide one or more lithography layers, such as a hardmask layer, for example, a spin-on-carbon (SOC), amorphous carbon, or metal hardmask layer, a CVD layer such as a silicon nitride (SiN) layer, a silicon oxide (SiO) layer, or a silicon oxynitride (SiON) layer, an organic or inorganic BARC layer, or a combination thereof, on the upper layer of the substrate before forming the photoresist underlayer of the present invention. Such layers, together with the layer of the photoresist underlayer composition of the present invention and the photoresist layer, form a lithography material stack. Typical lithography stacks that can be used in the patterning methods of the present invention include, for example, the following: SOC layer / underlayer / photoresist layer; SOC layer / SiON layer / underlayer / photoresist layer; SOC layer / SiARC layer / underlayer / photoresist layer; SOC layer / metal hardmask layer / underlayer / photoresist layer; amorphous carbon layer / underlayer / photoresist layer; and amorphous carbon layer / SiON layer / underlayer / photoresist layer.

[0064] As used herein, a "photoresist underlayer" is understood to refer to one or more layers disposed between the substrate and the photoresist layer (i.e., "over the substrate"). Thus, a coated underlayer of the invention (i.e., a layer of a photoresist underlayer composition) can be used alone as a photoresist underlayer, or a coated underlayer of the invention (i.e., a layer of a photoresist underlayer composition) can be used in combination with other underlayers, such as those described herein.

[0065] The photoresist underlayer composition may be coated on the substrate by any suitable means, such as spin coating, slot die coating, doctor blading, curtain coating, roller coating, spray coating, dip coating, and the like. In the case of semiconductor wafers, spin coating is preferred. In a typical spin coating method, the composition is applied to a substrate spinning at a speed of 500 to 4000 revolutions per minute (rpm) for a period of 15 to 90 seconds to obtain a desired layer of condensation polymer on the substrate. It will be appreciated by those skilled in the art that the thickness of the coated layer may be adjusted by varying the spin speed as well as the solids content of the composition. An underlayer formed from a photoresist underlayer composition typically has a dry layer thickness of 1 to 50 nanometers (nm), more typically 1 to 10 nm.

[0066] The coated photoresist underlayer composition is optionally soft baked at a relatively low temperature to remove any solvent and other relatively volatile components. Typically, the substrate is baked at a temperature of 150° C. or less, preferably 60-125° C., more preferably 90-115° C. The baking time is typically 10 seconds to 10 minutes, preferably 30 seconds to 5 minutes, more preferably 6-90 seconds. When the substrate is a wafer, such a baking step may be performed by heating the wafer on a hot plate. Such a soft baking step may be performed as part of the curing of the coating layer, or may be omitted altogether.

[0067] The photoresist underlayer composition is cured sufficiently so that the photoresist underlayer film does not or only minimally intermix with another underlayer component or photoresist layer formed on the underlayer. The photoresist underlayer composition can be cured in an oxygen-containing atmosphere such as air, or in an inert atmosphere such as nitrogen, and under conditions such as heat sufficient to obtain a cured coating layer. This curing step is preferably carried out on a hotplate type apparatus, although oven curing can be used to obtain equivalent results. Typically, curing can be carried out at a temperature of 150° C. or higher, preferably 150 to 450° C. Curing times are typically 10 seconds to 10 minutes. Optionally, a ramp or multi-step curing process can be used. A ramp bake typically begins at a relatively low (e.g., ambient) temperature, and the temperature is increased at a constant or variable ramp rate to a higher target temperature.

[0068] After the applied photoresist underlayer composition is cured, a photoresist layer is formed on the photoresist underlayer. As mentioned above, other intervening layers can be provided between the photoresist underlayer and the overcoated photoresist layer. In some embodiments, the method can further include forming a silicon-containing layer, an organic antireflective coating layer, or a combination thereof on the coated underlayer before forming the photoresist layer.

[0069] A wide variety of photoresists may be suitably used in the method of the invention, typically positive tone materials. The specific photoresist used will depend on the exposure wavelength used and will usually include an acid-sensitive matrix polymer, a photoactive component such as a photoacid generator, a solvent, and optional additional components. Suitable photoresists are known to those skilled in the art and are commercially available, for example, from DuPont Electronics & Industrial in their UV™ and EPIC™ product lines of various photoresist materials. The photoresist may be applied to the substrate by known coating techniques such as those described above in connection with the underlayer composition, with spin coating being typical. Typical thicknesses for the photoresist layer are between 10 and 300 nm. The photoresist layer is typically then soft baked to minimize the solvent content in the layer, thereby forming a tack-free coating and improving adhesion of the layer to the substrate. The soft bake may be performed on a hot plate or in an oven, with a hot plate being typical. A typical soft bake is performed at a temperature of 70-150° C., and for a time of 30-90 seconds.

[0070] The photoresist layer is then exposed to activating radiation through a photomask to create a solubility differential between exposed and unexposed regions. Reference herein to exposing a photoresist composition to radiation activating for the composition indicates that the radiation can form a latent image in the photoresist composition. The photomask has optically transparent and optically opaque regions corresponding to areas of the resist layer that are exposed and not exposed, respectively, by activating radiation. The exposure wavelength is typically less than 400 nm, more typically less than 300 nm, such as 248 nm (KrF), 193 nm (ArF), or EUV wavelengths (e.g., 13.5 nm). In a preferred embodiment, the exposure wavelength is a 193 nm or EUV wavelength. The exposure energy is typically 10 to 100 millijoules per square centimeter (mJ / cm), depending, for example, on the exposure tool and the components of the photosensitive composition. 2 ).

[0071] Following exposure of the photoresist layer, a post-exposure bake (PEB) is typically performed. The PEB can be performed, for example, on a hot plate or in an oven. The PEB is typically performed at a temperature of 70-150° C. and for a time of 30-90 seconds. A latent image is thereby formed, defined by the boundaries between the regions where polarity has been switched and the regions where it has not been switched (corresponding to the exposed and unexposed regions, respectively). The photoresist layer is then developed to remove the exposed regions of the layer, leaving the unexposed regions forming a patterned photoresist layer. The developer is typically an aqueous alkaline developer, for example a tetraalkylammonium hydroxide solution, such as a tetramethylammonium hydroxide (TMAH) solution, typically a 0.26 normal (N) (2.38 wt %) TMAH solution. The developer can be applied by known techniques, for example, spin coating or paddle coating.

[0072] The pattern of the photoresist layer can be transferred to one or more underlayers, including the coated underlayer, and to the substrate by appropriate etching techniques, such as by plasma etching using appropriate gas species for each layer to be etched. Depending on the number of layers and materials involved, the pattern transfer can include multiple etching steps using different etching gases. The patterned photoresist layer, the coated underlayer, and other optional layers in the lithography stack can be removed after the pattern transfer to the substrate using conventional techniques. Optionally, one or more of the layers of the stack can be removed after the pattern transfer to the underlayer and before the pattern transfer to the substrate, or consumed during the pattern transfer to the underlayer and before the pattern transfer to the substrate. For example, the pattern transfer to one or more of a silicon-containing layer, an organic anti-reflective coating layer, etc. can be performed after the exposed photoresist layer is developed and before the pattern transfer to the coated underlayer. The substrate is then further processed according to methods known in the art to form an electronic device.

[0073] Also provided is a coated substrate comprising a layer of the inventive photoresist underlayer composition on a substrate and a photoresist layer disposed on the layer of photoresist underlayer composition.

[0074] Yet another aspect provides a layered article comprising a photoresist underlayer obtained from the photoresist underlayer composition of the present invention. In one embodiment, the layered article can include a substrate, a coated underlayer disposed on the substrate, and a photoresist layer disposed on the coated underlayer.

[0075] Photoresist underlayers prepared from the photoresist underlayer compositions of the present invention exhibit excellent planarization properties, and as a result, can be useful in a variety of semiconductor manufacturing processes.

[0076] The concepts of the present invention are further illustrated by the following examples, which are intended to be non-limiting. The compounds and reagents used herein are commercially available, except where procedures are given below. EXAMPLES

[0077] Synthesis Example 1: A-1 [ka] 2-2'dithiodianiline (5.2 g) and 4-ethynylphthalic anhydride (7.2 g) were mixed together in a 250 mL round bottom flask. Glacial acetic acid (100 mL) was added and the mixture was heated to reflux for 16 hours. The solution was cooled to room temperature and then filtered to remove a small amount of precipitate that had formed. The filtrate was then precipitated into 1 L of 1:1 methanol:water (v / v). The solid was collected by filtration, stirred in fresh 1:1 methanol:water (v / v) for 3 hours, then collected by filtration and dried in vacuum at 50° C. overnight to give 8.51 g of product A-1.

[0078] Synthesis Example 2: A-2 [ka] 2-2'dithiodianiline (5.0 g) and 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (8.5 g) were mixed together in a 250 mL round bottom flask. Glacial acetic acid (100 mL) was added and the mixture was heated to 60° C. for 70 minutes. 4-Ethynylphthalic anhydride (7.0 g) was then added and the temperature was increased to 125° C. for 18 hours. The solution was cooled to room temperature and then added to 1 L of isopropanol to obtain a precipitate. The solid was collected by filtration, dissolved in tetrahydrofuran (50 mL) and placed in 1 L of water to form a precipitate again. The solid was collected by filtration and dried under vacuum at 50° C. overnight to obtain 6.62 g of product A-2. Mw (by GPC): 2062 g / mol.

[0079] Synthesis Example 3: A-3 [ka] Bis(4-hydroxyphenyl) disulfide (6.0 g) and 1,4-benzenedimethanol (1.3 g) were dissolved in propylene glycol methyl ether (15 mL) in a 100 mL round bottom flask. Methanesulfonic acid (0.48 g) was then added and the solution was heated to 120° C. for 20 hours and then cooled to room temperature. The solution was precipitated by addition to 500 mL of 3:1 water:methanol (v / v) and the solid was collected by filtration. The solid was dissolved in tetrahydrofuran (15 mL) and added to 500 mL of 95:5 heptane:isopropanol (v / v) to obtain a precipitate. The solvent was decanted and the solid product was dried in vacuum at 50° C. overnight to give 3.4 g of product A-3. Mw (by GPC): 1402 g / mol.

[0080] Synthesis Example 4: A-4 [ka] A mixture of 4-4'-dithiodianiline (5.0 g), cardanol (12.0 g), and paraformaldehyde (2.4 g) was added to a 100 mL round bottom flask and the mixture was heated at 80° C. for 2.5 hours. The resulting solid reaction product was dissolved in dichloromethane (approximately 30 mL) and added to 500 mL of methanol to obtain a precipitate. The solid was collected by filtration and dried under vacuum at 50° C. overnight to obtain 10.1 g of product A-4.

[0081] Comparative Synthesis Example 1: X-1 [ka] Cystamine dihydrochloride (25.0 g) was dissolved in water (300 mL). Potassium hydroxide (20.3 g) was added and the solution was stirred for 10 minutes. The solution was extracted with dichloromethane (150 mL x 3). The organic extracts were combined and concentrated by rotary evaporation to give 7.2 g of cystamine. The isolated cystamine (7.2 g) was mixed with 4-ethynylphthalic anhydride (16.3 g) in a 500 mL round bottom flask. Glacial acetic acid (230 mL) was then added and the solution was heated to reflux for 16 hours and then cooled to room temperature. The solution was filtered to remove solids and the filtrate was added to 1.5 L of water to give a precipitate. The solids were collected by filtration and dried under vacuum to give 3.6 g of product X-1.

[0082] Comparative Synthesis Example 2: X-2 [ka] 2-2'(ethane-1,2-diyl)dianiline (4.9 g) and 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (8.9 g) were placed in a 250 mL round bottom flask. Glacial acetic acid (100 mL) was added and the mixture was heated to 60° C. for 70 minutes. 4-Ethynylphthalic anhydride (7.3 g) was then added and the temperature was raised to 125° C. for 18 hours. The solution was then cooled to room temperature and then added to 1 L of isopropanol, resulting in a precipitate. The solid was collected by filtration, dissolved in tetrahydrofuran (50 mL) and added to 1 L of water. The resulting solid was collected by filtration and dried overnight under vacuum at 50° C. to give 5.5 g of product X-2. Mw (by GPC): 1936 g / mol.

[0083] Thermal stability of aromatic and aliphatic disulfides:

[0084] [Table 1]

[0085] As can be seen from Table 1, material A-1, which has aromatic disulfide bonds, exhibited improved thermal stability (as determined by thermogravimetric analysis) over X-1, which contains aliphatic disulfide bonds.

[0086] Preparation of Underlayer Composition The underlayer composition formulations of Examples 1-6 and Comparative Examples 1-5 were prepared by mixing the components in Table 2 in the relative weight amounts (in grams) shown in parentheses.

[0087] [Table 2]

[0088] PGMEA: propylene glycol methyl ether acetate; GBL: gamma-butyrolactone, CHO: cyclohexanone; X-3 is 4,4'-ethylenedianiline [ka] and The X-4 is [ka] It is.

[0089] Compounds B1-B4 are shown below.

[0090] [Table 3]

[0091] Functional performance of the lower layer Each composition in Table 2 was spin-coated onto each 200 mm silicon wafer at 1500 rpm on an ACT-8 Clean Track (Tokyo Electron Co.) and then cured under the conditions listed in Table 3 to form a film. The initial film thickness was measured using a Therma-Wave OptiProbe™ metrology tool. PGMEA release agent was then applied to each film for 90 seconds, followed by a post-stripping bake at 105° C. for 60 seconds. Each film thickness was measured again to determine the amount of film thickness lost. The difference in film thickness before and after contact with the PGMEA release agent was measured to determine the percent of film thickness remaining on the wafer (% film remaining). This value indicates the degree of cross-linking of the polymer layer.

[0092] The photoresist underlayer compositions of the present invention were evaluated to determine planarization properties. Templates with 100 nm SiO2 film thickness were fabricated with various pitches and patterns using a die size of 1 cm x 1 cm. Each die started with a 100 nm isolated step pattern, followed by 2000 μm of unpatterned open area, followed by various line / space patterns covering trenches from 45 nm / 90 nm to 2 μm / 5 μm. The template coupons were baked at 150° C. for 60 seconds as a dehydration bake before coating the coupons with the present compositions. Each photoresist underlayer composition was coated onto the template coupons using a spin coater and a spin speed of 1500 rpm + / - 200 rpm. The target film thickness was 100 nm after curing, and the composition dilution was adjusted accordingly to obtain approximately the target film thickness after curing. The films were cured by placing the wafer on a hotplate at the conditions listed in Table 3. Planarization was assessed using a KLA Tencor P-7 stylus profilometer to measure the film height transition from the isolated step to the open trench and record the maximum absolute value of the slope of this transition. A lower number indicates a more gradual transition and therefore improved planarization.

[0093] [Table 4]

[0094] As shown by the data in Table 3, Examples 1, 2, 4, 5, and 6 have improved planarization values ​​compared to their respective comparative examples. Example 3 has improved planarization compared to Comparative Examples 1, 2, and 5.

[0095] The direct benefit of having aromatic disulfide bonds can be seen in the following: The films of Example 1 and Comparative Example 1 have very similar structures, except for the -SS- bond in Example 1 and the -CH2-CH2- bond in Comparative Example 1, but Example 1 shows a significant improvement in planarization from 87 to 214, respectively. The membranes of Example 2 and Comparative Example 2 are made with polymer (4.2 parts), A-2, and B-1, respectively, blended using a solvent system of PGMEA(91.0) / GBL(4.8)pGMA, while Example 3 shows a significant improvement in planarization of 118 vs. 270, respectively. The films of Examples 4 and 5, and Comparative Examples 3 and 4, are each made using the respective underlayer forming compositions of Table 2. In the absence of additive, the film of Comparative Example 3 has a maximum slope value of 134, but by incorporating an amine-based or phenol-based additive containing a disulfide bond, the maximum slope value is shown to decrease to 115 (Example 4) and 108 (Example 5). Furthermore, the addition of a similar amine additive without a disulfide bond (Comparative Example 4) results in no or little improvement in planarization. Finally, by replacing the benzoxazine of Comparative Example 5 with the disulfide bond of Example 6, the planarization shows an improvement from 169 to 108, respectively.

[0096] While the disclosure has been described in conjunction with what are presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but rather is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A pattern formation method comprising the steps of: Providing a photoresist underlayer on a substrate; forming a photoresist layer over the photoresist underlayer; patterning the photoresist layer; transferring a pattern from the patterned photoresist layer to the photoresist underlying layer; The photoresist underlayer comprises: A solvent; Formula 1: 【Chemistry 1】 (In formula 1, Ar1 and Ar2 independently represent an aromatic group; each Y 1 and each Y 2 is independently -OH, -SH, -NH 2 , -R A , -OR A , -C(O)OR A , -SR A , or -NHR A , and y 1 and y 2 are independently integers from 0 to 6; R A is independently substituted or unsubstituted C 1 -C 18 alkyl, substituted or unsubstituted C 3 -C 12 cycloalkyl, substituted or unsubstituted C 3 -C 12 heterocycloalkyl, substituted or unsubstituted C 2-18 alkenyl, substituted or unsubstituted C 3-8 alkynyl, substituted or unsubstituted C 6 -C 14 aryl, or substituted or unsubstituted C 6 -C 14 heteroaryl; X 1 and X 2 are independently a single bond or a divalent linking group; Z 1 and Z 2 are independently -OR A , -C(O)OR A , -SR A , -NHR A , -OC(O)CR B ═CH 2 , a substituted or unsubstituted C 1-18 alkyl group, a substituted or unsubstituted C 1-18 alkoxy group, a substituted or unsubstituted C 3-12 cycloalkyl group, a substituted or unsubstituted C 3-12 heterocycloalkyl group, a substituted or unsubstituted C 3-12 glycidyl group, a substituted or unsubstituted C 2-18 alkenyl group, a substituted or unsubstituted C 5-12 cycloalkenyl group, a substituted or unsubstituted C 3-18 alkynyl group, a substituted or unsubstituted C 6-14 aryl group, or a substituted or unsubstituted C 3-44 heteroaryl; and R B is hydrogen, fluorine, or a substituted or unsubstituted C 1-5 alkyl group; z 1 and z 2 are independently an integer from 0 to 6; z 1 +y 1 is at least 1, and z 2 +y 2 is at least 1. or Formula 2: 【Chemistry 2】 (In formula 2, Ar1 and Ar2 independently represent an aromatic group; each Y 1 and each Y 2 is independently -OH, -SH, -C(O)OH, -NH 2 , -R A , -OR A , -C(O)OR A , -SR A , or -NHR A ; y 1 and y 2 are independently integers from 0 to 6; R A is independently substituted or unsubstituted C 1 -C 18 alkyl, substituted or unsubstituted C 3 -C 12 cycloalkyl, substituted or unsubstituted C 3 -C 12 heterocycloalkyl, substituted or unsubstituted C 2-18 alkenyl, substituted or unsubstituted C 3-8 alkynyl, substituted or unsubstituted C 6 -C 14 aryl, or substituted or unsubstituted C 6 -C 14 heteroaryl; X 3 is a divalent linking group; T 1 and T 2 are independently a divalent linking group; t 1 and t 2 are independently an integer from 0 to 6. A polymer having a repeating unit represented by The method of claim 1, wherein the composition is formed from a composition comprising:

2. The method according to claim 1, wherein Ar1 and Ar2 are independently substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthracenyl, substituted or unsubstituted pyrenyl, substituted or unsubstituted pyridinyl, substituted or unsubstituted quinolinyl, substituted or unsubstituted biphenyl, substituted or unsubstituted fluorenyl, or substituted or unsubstituted carbazolyl.

3. Z in formula 1 １ and Z ２ but independently the following: 【Chemistry 3】 (In formula 1, * represents the point of attachment to X 1 or X 2 or, if X 1 or X 2 is a single bond, the point of attachment to a ring carbon of Ar1 or Ar2, respectively; R is hydrogen, substituted or unsubstituted C 1-22 alkyl, substituted or unsubstituted C 3-14 cycloalkyl, substituted or unsubstituted C 1-22 heteroalkyl, substituted or unsubstituted C 2-14 heterocycloalkyl, substituted or unsubstituted C 6-24 aryl, or substituted or unsubstituted C 3-24 heteroaryl. The method according to claim 1 or 2, wherein

4. The divalent linking group X of formula 2 ３、 T １ , and T ２ each independently represents a single bond, —O—, —S—, —C(O)—, or 【Chemistry 4】 is a radical moiety of In these formulas: R Ｄ is a single bond, or -C(O)-, -S(O) ２ -, substituted or unsubstituted C １～６ Alkylene, substituted or unsubstituted C ３～１４ Cycloalkylene, substituted or unsubstituted C １～２２ Heteroalkylene, substituted or unsubstituted C ６～２４ Arylene, or substituted or unsubstituted C ３～２４ Heteroarylene, R Ｅ is a substituted or unsubstituted C １～６ Alkylene, substituted or unsubstituted C ３～１４ Cycloalkylene, substituted or unsubstituted C １～２２ Heteroalkylene, substituted or unsubstituted C ６～２４ Arylene, or substituted or unsubstituted C ３～２４ Heteroarylene, W and W １ are independently substituted or unsubstituted C １～４ alkylene, -O-, or a combination thereof; Ar ４ and Ar ５ are independently substituted or unsubstituted C ６～１４ Arylene, or substituted or unsubstituted C ３～１４ Heteroarylene, Z is absent, O, —S—, —C(O)—, substituted or unsubstituted C １～４ is alkylene, m is 0, 1, or 2; n is 0 or 1; The method according to any one of claims 1 to 3, wherein * represents a point of attachment of a divalent linking group.

5. The method of any one of claims 1 to 4, wherein the photoresist underlayer composition further comprises a compound containing an epoxy group or a polymer containing an epoxy group.

6. the photoresist underlayer composition comprising: Formula 4: 【Chemistry 5】 (In the formula, L 2 is a divalent linking group; J is a substituted or unsubstituted C 1 -C 10 alkyl group having a hydroxy group or a glycidyl group, a substituted or unsubstituted C 3 -C 10 cycloalkyl group having a hydroxy group or a glycidyl group, a substituted or unsubstituted C 6-24 aryl group having a hydroxy group or a glycidyl group, or a substituted or unsubstituted C 3-24 heteroaryl group having a hydroxy group or a glycidyl group; R P is hydrogen, fluorine, or optionally substituted C 1-5 alkyl. or a polymer derived from a monomer of Formula 5: 【Chemistry 6】 (In formula 5, Ring A represents an aromatic group; Y is a divalent linking group; and o is an integer from 1 to 8. A polymer comprising a repeating unit represented by the formula: The method of any one of claims 1 to 5, further comprising:

7. The compound of formula 1 is as follows: 【Chemistry 7】 It is represented by: The polymer having a repeat unit of formula 2 is 【Chemistry 8】 or y １ and y ２ is independently 0, 1, 2, or 3; １ +y ２ is at least 1, and each Y １ And each Y ２ are independently -OH, -SH, -C(O)OH, -NH ２ , R Ａ , -OR Ａ , -C(O)OR Ａ , -SR Ａ , or -NHR Ａ and R Ａ are independently substituted or unsubstituted C １ ~C ６ Alkyl, substituted or unsubstituted C ３ ~C ６ Heterocycloalkyl, or substituted or unsubstituted C ６ ~C １４ is aryl; X ３ , T １ , and T ２ are independently an aromatic group having 1 to 3 aromatic rings and / or 【Chemistry 9】 Including, W and W １ are independently substituted or unsubstituted C １～４ alkylene, -O-, or a combination thereof; Ar ４ and Ar ５ are independently substituted or unsubstituted C ６～１４ Arylene, or substituted or unsubstituted C ３～１４ is heteroarylene; Z is absent, O, —S—, —C(O)—, substituted or unsubstituted C １～４ is alkylene; m is 0, 1, or 2 and n is 0 or 1; * represents a connection point of a divalent linking group; t １ and t ２ The method of any one of claims 1 to 6, wherein is independently 0, 1, or 2.

8. A solvent; Formula 1: 【Chemistry 10】 (In formula 1, Ar1 and Ar2 independently represent an aromatic group; each Y 1 and each Y 2 is independently -OH, -SH, -NH 2 , -R A , -OR A , -C(O)OR A , -SR A , or -NHR A , and y 1 and y 2 are independently integers from 0 to 6; R A is independently substituted or unsubstituted C 1 -C 18 alkyl, substituted or unsubstituted C 3 -C 12 cycloalkyl, substituted or unsubstituted C 3 -C 12 heterocycloalkyl, substituted or unsubstituted C 2-18 alkenyl, substituted or unsubstituted C 3-8 alkynyl, substituted or unsubstituted C 6 -C 14 aryl, or substituted or unsubstituted C 6 -C 14 heteroaryl; X 1 and X 2 are independently a single bond or a divalent linking group; Z 1 and Z 2 are independently -OR A , -C(O)OR A , -SR A , -NHR A , -OC(O)CR B ═CH 2 , a substituted or unsubstituted C 1-18 alkyl group, a substituted or unsubstituted C 1-18 alkoxy group, a substituted or unsubstituted C 3-12 cycloalkyl group, a substituted or unsubstituted C 3-12 heterocycloalkyl group, a substituted or unsubstituted C 3-12 glycidyl group, a substituted or unsubstituted C 2-18 alkenyl group, a substituted or unsubstituted C 5-12 cycloalkenyl group, a substituted or unsubstituted C 3-18 alkynyl group, a substituted or unsubstituted C 6-14 aryl group, or a substituted or unsubstituted C 3-44 heteroaryl; and R B is hydrogen, fluorine, or a substituted or unsubstituted C 1-5 alkyl group; z 1 and z 2 are independently an integer from 0 to 6, z 1 +y 1 is at least 1, and z 2 +y 2 is at least 1. or Formula 2: 【Chemistry 11】 (In formula 2, Ar1 and Ar2 independently represent an aromatic group; each Y 1 and each Y 2 is independently -OH, -SH, -C(O)OH, -NH 2 , -R A , -OR A , -C(O)OR A , -SR A , or -NHR A ; y 1 and y 2 are independently integers from 0 to 6; R A is independently substituted or unsubstituted C 1 -C 18 alkyl, substituted or unsubstituted C 3 -C 12 cycloalkyl, substituted or unsubstituted C 3 -C 12 heterocycloalkyl, substituted or unsubstituted C 2-18 alkenyl, substituted or unsubstituted C 3-8 alkynyl, substituted or unsubstituted C 6 -C 14 aryl, or substituted or unsubstituted C 6 -C 14 heteroaryl; X 3 is a divalent linking group; T 1 and T 2 are independently a divalent linking group; t 1 and t 2 are independently an integer from 0 to 6. A polymer having a repeating unit represented by A photoresist underlayer composition comprising:

9. 9. The photoresist underlayer composition of claim 8 further comprising a compound containing an epoxy group or a polymer containing an epoxy group.

10. Formula 4: 【Chemistry 12】 (In the formula, L 2 is a divalent linking group; J is a substituted or unsubstituted C 1 -C 10 alkyl group having a hydroxy group or a glycidyl group, a substituted or unsubstituted C 3 -C 10 cycloalkyl group having a hydroxy group or a glycidyl group, a substituted or unsubstituted C 6-24 aryl group having a hydroxy group or a glycidyl group, or a substituted or unsubstituted C 3-24 heteroaryl group having a hydroxy group or a glycidyl group; R P is hydrogen, fluorine, or optionally substituted C 1-5 alkyl. or a polymer derived from a monomer of Formula 5: A polymer containing a repeating unit represented by 【Chemistry 13】 (In formula 5, Ring A represents an aromatic group; Y is a divalent linking group; and o is an integer from 1 to 8. A polymer containing a repeating unit represented by The photoresist underlayer composition of claim 8 further comprising:

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