Blank mask and photomask using same

Abstract

SOLUTION: An embodiment relates to a blank mask including: a transparent substrate; and a light shielding film positioned on the transparent substrate. The light shielding film comprises a transition metal and at least one of oxygen and nitrogen. The Mtr value of the formula 1, Mtr=|Rsk|×Rku, of a surface of the light shielding film is 6 or less. In the formula 1, |Rsk| is the absolute value of the Rsk value. The Rsk value of the surface of the light shielding film is 1 or less.EFFECT: Such a blank mask and the like improve, when a resist is applied to a surface of a light shielding film, adhesion between the light shielding film and the resist film and allow, when the resist pattern is removed, effective removal of the resist pattern remaining on a surface of the light shielding film.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The embodiment relates to a blank mask and a photomask using the same. [Background technology]

[0002] The increasing integration of semiconductor devices and other devices requires finer circuit patterns, which increases the importance of lithography, a technique for developing circuit patterns on the surface of a wafer using a photomask.

[0003] In order to develop fine circuit patterns, the exposure light source used in the exposure process must have a shorter wavelength. Recent exposure light sources include the ArF excimer laser (wavelength 193 nm).

[0004] Meanwhile, photomasks include binary masks and phase shift masks.

[0005] A binary mask has a structure in which a light-shielding layer pattern is formed on a light-transmitting substrate. In the binary mask, on the surface on which the pattern is formed, the transparent portion not including the light-shielding layer transmits the exposure light, and the light-shielding portion including the light-shielding layer blocks the exposure light, thereby exposing the pattern on the resist film on the wafer surface. However, as the pattern becomes finer, the binary mask may cause problems in developing the fine pattern due to the diffraction of light that occurs at the edge of the transparent portion during the exposure process.

[0006] Phase shift masks include the Levenson type, the outrigger type, and the half-tone type. Among them, the half-tone type phase shift mask has a configuration in which a pattern formed of a semi-transmitting film is formed on a light-transmitting substrate. On the surface on which the pattern of the half-tone type phase shift mask is formed, the transmissive portion not including the semi-transmitting layer transmits the exposure light, and the semi-transmitting portion including the semi-transmitting layer transmits the attenuated exposure light. The attenuated exposure light has a phase difference compared to the exposure light that has passed through the transmissive portion. As a result, the diffracted light generated at the edge of the transmissive portion is offset by the exposure light that has passed through the semi-transmitting portion, and the phase shift mask can form a more elaborate fine pattern on the surface of the wafer. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Korean Patent No. 10-1593390 [Patent Document 2] Korean Patent Publication No. 10-2016-0031423 [Patent Document 3] Japanese Patent No. 6766676 Summary of the Invention [Problem to be solved by the invention]

[0008] An object of the embodiment is to provide a blank mask in which the adhesion between the light-shielding film and the resist film is improved when the resist is applied to the surface of the light-shielding film, and the applied resist film can be easily removed, and a photomask using the blank mask. [Means for solving the problem]

[0009] A blank mask according to an embodiment of the present specification includes a light-transmitting substrate and a light-shielding film located on the light-transmitting substrate.

[0010] The light-shielding film contains a transition metal and at least one of oxygen and nitrogen.

[0011] The surface of the light-shielding film has an Mtr ​​value of 6 or less as determined by the following formula 1.

[0012] [Formula 1] Mtr = |Rsk| × Rku

[0013] In the above formula 1, |Rsk| is the absolute value of the Rsk value.

[0014] The Rsk value may be 1 or less.

[0015] The Rsk value may be less than or equal to 0.1.

[0016] The Rsk value may be greater than or equal to -1.

[0017] The Rku value may be 6 or less.

[0018] The light-shielding film may have a Dw value of 0.01% or less as determined by the following formula 2:

[0019] [Formula 2] JPEG0007652872000001.jpg1577

[0020] In the formula 2, The Ds is the weight of the blank mask measured after applying a resist film to a thickness of 1300 Å on the light-shielding film, drying it, and then removing it.

[0021] The Do is the weight of the blank mask measured before the resist film is applied onto the light-shielding film.

[0022] The light-shielding film may include a first light-shielding layer and a second light-shielding layer located on the first light-shielding layer.

[0023] The combined nitrogen content and oxygen content of the second light-shielding layer may be 10 to 35 atomic %.

[0024] The transition metal may include at least one of Cr, Ta, Ti, and Hf.

[0025] The light-shielding film may be cooled by directly spraying cooling water onto the surface of the light-shielding film.

[0026] A photomask according to another embodiment of the present specification includes a light-transmitting substrate and a light-shielding pattern film located on the light-transmitting substrate.

[0027] The light-shielding pattern film contains a transition metal and at least one of oxygen and nitrogen.

[0028] The Mtr value of the following formula 1 on the upper surface of the light-shielding pattern film is 6 or less.

[0029] [Formula 1] Mtr = |Rsk| × Rku

[0030] In the above formula 1, |Rsk| is the absolute value of the Rsk value.

[0031] The Rsk value of the upper surface of the light-shielding pattern film is 1 or less.

[0032] A manufacturing method of a blank mask according to another embodiment of the present specification includes a preparation step of placing a light-transmitting substrate and a sputtering target in a sputtering chamber; a film-forming step of injecting an atmospheric gas into the sputtering chamber and applying power to the sputtering target to form a pre-heat-treated substrate having a light-shielding film formed on the light-transmitting substrate; a heat-treating step of subjecting the pre-heat-treated substrate to a heat treatment at 150 to 330°C for 5 to 30 minutes to form a pre-cooling substrate; and a cooling step of directly spraying cooling water onto the surface of the pre-cooling substrate facing the light-transmitting substrate and the surface of the light-shielding film side to cool the substrate, thereby manufacturing a blank mask.

[0033] The method for producing the blank mask may include a stabilization step of stabilizing the substrate that has been subjected to the heat treatment step and has not yet been cooled down at 30 to 50° C. for 1 to 5 minutes.

[0034] In the cooling step, the cooling water may have a temperature of 10 to 30°C.

[0035] In the cooling step, the cooling water can be sprayed onto the surface on the light-shielding film side at an angle of 30 to 75° and at a flow rate of 0.5 to 1.5 L / min.

[0036] The blank mask includes the light-transmitting substrate and the light-shielding film located on the light-transmitting substrate.

[0037] The light-shielding film contains a transition metal and at least one of oxygen and nitrogen.

[0038] The surface of the light-shielding film has an Mtr ​​value of 6 or less as determined by the following formula 1:

[0039] [Formula 1] Mtr = |Rsk| × Rku

[0040] In the above formula 1, |Rsk| is the absolute value of the Rsk value. Effect of the Invention

[0041] In the blank mask according to the embodiment, when a resist film is formed on the surface of the light-shielding film, the adhesion between the light-shielding film and the resist film is improved, and the resist pattern may be easily removed from the surface of the light-shielding film pattern. [Brief description of the drawings]

[0042] [Figure 1] FIG. 2 is a conceptual diagram illustrating a blank mask according to an embodiment of the present specification. [Diagram 2] FIG. 2 is a conceptual diagram illustrating a blank mask according to an embodiment of the present specification. [Diagram 3]FIG. 2 is a conceptual diagram illustrating a blank mask according to an embodiment of the present specification. [Figure 4] FIG. 2 is a conceptual diagram illustrating a blank mask according to an embodiment of the present specification. [Diagram 5] FIG. 13 is a conceptual diagram illustrating a photomask according to another embodiment of the present specification. [Figure 6] FIG. 2 is a conceptual diagram illustrating a measurement region of the Mtr value of a photomask. BEST MODE FOR CARRYING OUT THEINVENTION

[0043] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is not limited to the embodiments described herein, but may be practiced in various different forms.

[0044] As used herein, terms of degree such as "about," "substantially," and the like are used in a numerical or approximate sense when the tolerances of manufacturing and materials inherent in the referred meaning are given, and are used to prevent unscrupulous infringers from unfairly taking advantage of disclosures in which precise or absolute numerical values ​​are referred to to aid in the understanding of the embodiments.

[0045] Throughout this specification, the term "combinations thereof" in a Markush form phrase means a mixture or combination of one or more selected from the group of elements set forth in the Markush form phrase, including one or more selected from the group of elements.

[0046] Throughout this specification, the phrase "A and / or B" means "A, B, or A and B."

[0047] Throughout this specification, terms such as "first", "second" or "A", "B" are used to distinguish identical terms from one another, unless otherwise specified.

[0048] In this specification, the term "B is located on A" means that B can be located on A, or B can be located on A with another layer located therebetween, and is not to be interpreted as being limited to B being located in contact with the surface of A.

[0049] In this specification, the term "singular" is to be construed as including the singular or plural as the context requires, unless otherwise specified.

[0050] In this specification, room temperature is 20 to 25°C.

[0051] The Rsk value is a value evaluated in accordance with ISO_4287. The Rsk value indicates the symmetry (skewness) of the height of the surface profile of the object to be measured.

[0052] The Rku value is a value evaluated in accordance with ISO_4287. The Rku value indicates the degree of sharpness (kurtosis) of the surface profile of the measurement object.

[0053] The peak is a profile portion located above a reference line (meaning the average line of height in the surface profile) in the surface profile of the light-shielding film 20 .

[0054] The valley is a profile portion located below a reference line in the surface profile of the light-shielding film 20 .

[0055] Although the present specification describes a resist film as an example of a thin film formed on a light-shielding film, the features of the embodiment may be applied to any thin film that is formed on a light-shielding film and can be removed in a subsequent process. The thin film formed on a light-shielding film is not limited to a resist film.

[0056] As semiconductors become more highly integrated, there is a demand for finer circuit patterns to be formed on semiconductor wafers. As the line width of the patterns developed on the semiconductor wafers becomes smaller, problems related to the resolution of the photomasks used to develop the patterns also tend to increase.

[0057] Characteristics related to the attachment or removal of a resist film to a light-shielding film may be factors that affect the degradation of the resolution of a photomask. Specifically, depending on the adhesive strength between the applied resist film and the light-shielding film, a phenomenon may occur in which an edge portion of a developed resist pattern film falls off from the surface of the light-shielding film. In addition, after patterning the light-shielding film using the resist pattern as a mask, a problem may occur in which a part of the resist pattern remains on the surface of the light-shielding film pattern during the process of removing the resist pattern. Such a problem may cause particles to be generated during the exposure process of a semiconductor wafer.

[0058] The inventors of the embodiment confirmed that the adhesion between the light-shielding film and the resist film and the ease of removing the resist pattern can be improved by controlling the surface roughness characteristics of the light-shielding film, and thus completed the embodiment.

[0059] Hereinafter, the embodiment will be described in detail.

[0060] 1 to 4 are conceptual diagrams illustrating a blank mask according to an embodiment of the present disclosure, and an embodiment will be described with reference to FIGS.

[0061] To achieve the above object, a blank mask 100 according to an embodiment disclosed in the present specification includes a light-transmitting substrate 10 and a light-shielding film 20 disposed on the light-transmitting substrate 10 .

[0062] The material of the light-transmitting substrate 10 is not limited as long as it has light transmittance to the exposure light and can be applied to the photomask 200. Specifically, the transmittance of the light-transmitting substrate 10 to the exposure light with a wavelength of 193 nm may be 85% or more. The transmittance may be 87% or more. The transmittance may be 99.99% or less. Exemplarily, a synthetic quartz substrate may be applied as the light-transmitting substrate 10. In such a case, attenuation of the light passing through the light-transmitting substrate 10 can be suppressed.

[0063] In addition, the surface characteristics such as flatness and roughness of the light-transmitting substrate 10 can be adjusted to suppress the occurrence of optical distortion.

[0064] The light-shielding film 20 may be located on the front side of the light-transmitting substrate 10 .

[0065] The light-shielding film 20 may have a property of blocking a certain portion or more of the exposure light incident from the back side of the light-transmitting substrate 10. In addition, when a phase shifting film 30 or the like is located between the light-transmitting substrate 10 and the light-shielding film 20, the light-shielding film 20 can be used as an etching mask in a process of etching the phase shifting film 30 or the like according to a pattern shape.

[0066] Surface roughness characteristics of light-shielding film The Mtr value of the surface of the light-shielding film 20 as determined by the following formula 1 is 6 or less.

[0067] [Formula 1] Mtr = |Rsk| × Rku

[0068] In the above formula 1, |Rsk| is the absolute value of the Rsk value.

[0069] The light-shielding film 20 can be formed through a sputtering process or the like. In the sputtering process, sputtering particles are sporadically deposited on the surface of the film-forming target to form a film. When the light-shielding film 20 is formed through the sputtering process, the sputtering particles can be sporadically deposited on the surface of the film-forming target. This allows the surface of the light-shielding film 20 to have a shape with fine irregularities distributed thereon.

[0070] For the purpose of patterning the light-shielding film 20, a resist film 40 may be formed on the light-shielding film 20. A resist pattern (not shown) may be formed on the resist film 40 using an electron beam exposure device or the like. The resist pattern may be removed after the patterning of the light-shielding film is completed.

[0071] Factors that affect the characteristics related to the adhesion and removal of the light-shielding film 20 and the resist film 40 include the surface roughness characteristics of the light-shielding film 20 after the film formation is completed, the difference in surface energy between the light-shielding film 20 and the resist film 40, and the physical properties of a compound that is applied to the surface of the light-shielding film 20 before the application of the resist film 40. In particular, the embodiment can improve the adhesion and ease of removal between the resist film 40 and the light-shielding film 20 by controlling the surface roughness characteristics of the light-shielding film 20. In addition, a decrease in the resolution of the photomask 200 can be substantially suppressed.

[0072] Specifically, before the resist coating step, a step of surface treating the light-shielding film 20 with an adhesion improving substance such as HMDS (Hexamethyldisilazane) or other organic silane-based compounds can be applied in order to improve the adhesion between the light-shielding film 20 and the resist film 40. In the surface treatment step of the light-shielding film 20, depending on the distribution of roughness in the in-plane direction of the surface of the light-shielding film 20, some regions, particularly regions where many peaks are concentrated, may not be sufficiently coated with the adhesion improving substance. In addition, due to the difference in surface energy between the surface of the light-shielding film 20 and the resist film 40, the two thin films may not have sufficient adhesion.

[0073] In the process of removing the resist pattern after completing the patterning of the light-shielding film 20, a part of the resist pattern may not be removed. In particular, a part of the resist pattern may remain in an area where the valleys of the patterned light-shielding film are concentrated. The remaining part of the resist pattern may form particles, etc., and may be one of the causes of reducing the resolution of the photomask 200.

[0074] To solve the above problems, a method of simply reducing the size of the fine irregularities formed on the surface of the light-shielding film 20 using an etchant or the like can be considered. However, as the required line width tends to become finer, even the reduced irregularities can still cause problems related to the adhesion and removal of the resist film 40. That is, the surface characteristics of the light-shielding film need to be more precisely controlled.

[0075] Therefore, the inventors of the embodiment have confirmed that by controlling the Mtr value, which can reflect both the skewness and kurtosis characteristics of the surface of the light-shielding film 20, the resist film 40 can exhibit stable adhesion to the light-shielding film 20 even if there are fine irregularities on the surface of the light-shielding film 20, and the formation of resist residues can be effectively suppressed when the resist pattern is removed.

[0076] The Rsk value, Rku value, and Mtr value of the surface of the light-shielding film 20 can be controlled by the conditions of the sputtering process when the light-shielding film 20 is formed by sputtering, the atmospheric gas when the light-shielding film 20 is heat-treated, the conditions of the heat treatment process such as the rate of temperature change, the conditions of the cooling process, etc. A specific explanation of the means for controlling the Mtr value will be omitted as it will overlap with the contents below.

[0077] The method for measuring the Rsk value, the Rku value, and the Mtr value of the surface of the light-shielding film 20 is as follows.

[0078] The Rsk value, Rku value, and Mtr value of the surface of the light-shielding film 20 are measured in a central region of the surface of the light-shielding film 20. The central region of the surface of the light-shielding film 20 means a region that is located in the center (central part) of the surface of the light-shielding film 20 and is 1 μm wide and 1 μm long.

[0079] The Rsk value and Rku value in the central region are measured using a two-dimensional roughness measuring device. During the measurement, the scan speed is set to 0.5 Hz in non-contact mode. For example, the Rsk value and Rku value can be measured using Park System's XE-150 model, which is equipped with Park System's cantilever model PPP-NCHR as a probe.

[0080] The Mtr value of the surface of the light-shielding film 20 is calculated from the measured Rsk and Rku values.

[0081] The Mtr value of the surface of the light-shielding film 20 may be 6 or less. The Mtr value may be 4 or less. The Mtr value may be 1.5 or less. The Mtr value may be greater than 0. The Mtr value may be 0.5 or more. In such cases, adhesion of the resist film 40 to the light-shielding film 20 may be improved, and the formation of particles due to resist residues may be suppressed.

[0082] The Rsk value of the surface of the light-shielding film 20 may be 1 or less.

[0083] When the Rsk value of the surface of the light-shielding film 20 is controlled within a preset range, it is possible to suppress the formation of a region where peaks are densely packed, where the adhesion improving material is difficult to coat stably. This can lead to an improvement in the adhesion between the resist film 40 and the light-shielding film 20. In addition, valleys can be appropriately formed on the surface of the light-shielding film, so that the generation of resist residues can be effectively suppressed.

[0084] The Rsk value of the surface of the light-shielding film 20 may be 1 or less. The Rsk value may be 0.1 or less. The Rsk value may be -1 or more. The Rsk value may be -0.5 or more. In such cases, the resist film 40 or the resist pattern can be easily attached and removed from the light-shielding film 20.

[0085] The Rku value of the surface of the light-shielding film 20 may be 6 or less.

[0086] By controlling the Rku value of the surface of the light-shielding film 20, it is possible to improve the adhesion between the light-shielding film 20 and the resist film 40. Specifically, by controlling the kurtosis of the peak formed on the surface of the light-shielding film 20, it is possible to coat the adhesion improving substance with a sufficient thickness over the entire surface of the light-shielding film 20 on which fine irregularities are formed, and to maintain the coating thickness.

[0087] The Rku value of the surface of the light-shielding film 20 may be 6 or less. The Rku value may be 4 or less. The Rku value may be 3 or less. The Rku value may be 1 or more. The Rku value may be 2 or more. In such cases, the resist pattern on the surface of the light-shielding film 20 can be stably maintained according to the designed shape.

[0088] By controlling the Mtr value of the surface of the light-shielding film 20, the Rsk value and the Rku value can be adjusted at the same time. If only the Rsk value of the surface of the light-shielding film 20 is controlled, the adhesion improving material may not be sufficiently coated and maintained on the surface of the light-shielding film 20, and the resist pattern may not be stably attached to the surface of the light-shielding film 20. Also, if only the Rku value of the surface of the light-shielding film 20 is controlled within a range preset in the embodiment, peaks may be too dense on the surface of the light-shielding film 20, and the coating layer of the adhesion improving material may not be stably formed, or valleys may be too formed, and the resist pattern may not be easily removed. Therefore, by simultaneously adjusting the Rsk value and the Rku value of the surface of the light-shielding film 20, not only the adhesion between the light-shielding film 20 and the resist film 40 but also the ease of removing the resist pattern may be improved.

[0089] Ease of removing the light-shielding resist film The light-shielding film 20 may have a Dw value of the following formula 2 of 0.01% or less.

[0090] [Formula 2] JPEG0007652872000002.jpg1577

[0091] In the formula 2, Ds is the weight of the blank mask 100 measured after applying the resist film 40 to a thickness of 1300 Å on the light-shielding film 20, drying it, and then removing it.

[0092] The weight Do is the weight of the blank mask 100 measured before the resist film 40 is applied onto the light-shielding film 20 .

[0093] By controlling the Dw value of the light-shielding film 20 within a preset range, it is possible to suppress the formation of particles due to resist residues.

[0094] The method for measuring the Dw value of the light-shielding film 20 is as follows.

[0095] The Do value, which is the weight of the blank mask before the resist film is formed, is measured.

[0096] In measuring the Ds value, a resist solution is sprayed by spin coating to coat the resist solution on the light-shielding film 20. The coated resist solution is then dried at 140° C. for 620 seconds to form a resist film 40. The coated and dried resist film 40 is removed by dipping in an aqueous solution of peroxymonosulfuric acid (H2SO5) made by mixing sulfuric acid (H2SO4) and hydrogen peroxide (H2O2), and the Ds value is then measured.

[0097] The Dw value is calculated from the measured Do and Ds values.

[0098] As the resist, for example, Fuji's XFP255 model or XFP355 model can be applied.

[0099] The Dw value of the light-shielding film 20 may be 0.01% or less. The Dw value may be 0.006% or less. The Dw value may be 0.001% or more. The Dw value may be 0.002% or more. In such cases, degradation of the resolution of the photomask 200 due to resist residues can be suppressed.

[0100] Composition and thickness of the light-shielding film The light-shielding film 20 may contain a transition metal and at least one of oxygen and nitrogen.

[0101] The light-shielding film 20 may include a first light-shielding layer 21 and a second light-shielding layer 22 located on the first light-shielding layer 21 .

[0102] In the embodiment, the light-shielding film 20 can be helped to exhibit the desired extinction characteristics by controlling the content of each element contained in the second light-shielding layer 22. In addition, when the light-shielding film 20 is patterned, the side of the pattern of the light-shielding film 20 can be made to have a shape that is nearly perpendicular to the surface of the light-transmitting substrate. In addition, it can be helped that the resist pattern is stably attached and maintained on the surface of the light-shielding film 20 according to the designed shape.

[0103] The second light-shielding layer 22 may contain a transition metal and at least one of oxygen and nitrogen. The second light-shielding layer 22 may contain 50 to 80 at % of the transition metal. The second light-shielding layer 22 may contain 55 to 75 at % of the transition metal. The second light-shielding layer 22 may contain 60 to 70 at % of the transition metal.

[0104] The combined oxygen and nitrogen content of the second light-shielding layer 22 may be 10 to 35 at %. The combined oxygen and nitrogen content of the second light-shielding layer 22 may be 15 to 25 at %.

[0105] The second light-shielding layer 22 may contain nitrogen at 5 to 20 at %. The second light-shielding layer 22 may contain nitrogen at 7 to 13 at %.

[0106] In this case, the second light-shielding layer 22 can help the light-shielding film 20 to have excellent extinction properties. In addition, even if the upper part of the light-shielding film 20 is exposed to an etching gas for a long time during the etching process of the light-shielding film 20, the line width of the patterned light-shielding film can be maintained constant in the thickness direction. In addition, when a resist pattern is located on the surface of the second light-shielding layer 22, the resist pattern can be stably attached and maintained without deformation.

[0107] The first light-shielding layer 21 may contain a transition metal, oxygen, and nitrogen. The first light-shielding layer 21 may contain 30 to 60 at % of the transition metal. The first light-shielding layer 21 may contain 35 to 55 at % of the transition metal. The first light-shielding layer 21 may contain 40 to 50 at % of the transition metal.

[0108] The combined oxygen and nitrogen content of the first light-shielding layer 21 may be 40 to 70 at %. The combined oxygen and nitrogen content of the first light-shielding layer 21 may be 45 to 65 at %. The combined oxygen and nitrogen content of the first light-shielding layer 21 may be 50 to 60 at %.

[0109] The first light-shielding layer 21 may contain 20 to 40 at % of oxygen.The first light-shielding layer 21 may contain 23 to 33 at % of oxygen.The first light-shielding layer 21 may contain 25 to 30 at % of oxygen.

[0110] The first light-shielding layer 21 may contain nitrogen at 5 to 20 at %. The first light-shielding layer 21 may contain nitrogen at 7 to 17 at %. The first light-shielding layer 21 may contain nitrogen at 10 to 15 at %.

[0111] In this case, the first light-shielding layer 21 can help the light-shielding film 20 to have excellent light-extinguishing properties. Also, the first light-shielding layer 21 can suppress the generation of steps that may occur on the side surfaces of the light-shielding pattern film when the light-shielding film 20 is patterned.

[0112] The transition metal may include at least one of Cr, Ta, Ti, and Hf. The transition metal may be Cr.

[0113] The film thickness of the first light-shielding layer 21 may be 250 to 650 Å. The film thickness of the first light-shielding layer 21 may be 350 to 600 Å. The film thickness of the first light-shielding layer 21 may be 400 to 550 Å. In such cases, the first light-shielding layer 21 can help the light-shielding film 20 to effectively block the exposure light.

[0114] The second light-shielding layer 22 may have a thickness of 30 to 200 Å. The second light-shielding layer 22 may have a thickness of 30 to 100 Å. The second light-shielding layer 22 may have a thickness of 40 to 80 Å. In such cases, the second light-shielding layer 22 can improve the extinction characteristics of the light-shielding film 20 and help the line width of the light-shielding pattern film to have a more uniform value in the thickness direction.

[0115] The ratio of the thickness of the second light-shielding layer 22 to the thickness of the first light-shielding layer 21 may be 0.05 to 0.3. The thickness ratio may be 0.07 to 0.25. The thickness ratio may be 0.1 to 0.2. In such a case, the light-shielding film 20 can have excellent extinction properties. Furthermore, when the light-shielding film is patterned, the light-shielding pattern film can form a side surface nearly perpendicular to the surface of the light-transmitting substrate.

[0116] Optical properties of light-shielding film The light-shielding film 20 may have an optical density of 1.8 or more for light with a wavelength of 193 nm.The light-shielding film 20 may have an optical density of 1.9 or more for light with a wavelength of 193 nm.

[0117] The light-shielding film 20 may have a transmittance of 1.5% or less for light with a wavelength of 193 nm. The light-shielding film 20 may have a transmittance of 1.4% or less for light with a wavelength of 193 nm. The light-shielding film 20 may have a transmittance of 1.2% or less for light with a wavelength of 193 nm.

[0118] In such a case, the pattern including the light-shielding film 20 can effectively block the transmission of the exposure light.

[0119] A phase shift film 30 may be located between the light-transmitting substrate 10 and the light-shielding film 20. The thin film including the phase shift film 30 and the light-shielding film 20 may have an optical density of 3 or more for light with a wavelength of 193 nm. The thin film may have an optical density of 3.2 or more for light with a wavelength of 193 nm. In this case, the thin film can effectively suppress the transmission of the exposure light.

[0120] Other thin films Other thin films such as a phase shift film 30 and a hard mask film (not shown) may be used.

[0121] The phase shift film 30 may be located between the light-transmitting substrate 10 and the light-shielding film 20. The phase shift film 30 attenuates the intensity of the exposure light passing through the phase shift film 30 and adjusts the phase difference of the exposure light, thereby substantially suppressing diffracted light generated at the edge of the pattern.

[0122] The phase shift film 30 may have a phase difference of 170 to 190° with respect to light having a wavelength of 193 nm. The phase difference may be 175 to 185°. The phase shift film 30 may have a transmittance of 3 to 10% with respect to light having a wavelength of 193 nm. The transmittance may be 4 to 8%. In such cases, the resolution of the photomask 200 including the phase shift film 30 can be improved.

[0123] The phase shifter film 30 may include a transition metal and silicon. The phase shifter film 30 may include a transition metal, silicon, oxygen, and nitrogen. The transition metal may be molybdenum.

[0124] A hard mask (not shown) may be positioned on the light-shielding layer 20. The hard mask may function as an etching mask layer when pattern-etching the light-shielding layer 20. The hard mask may include silicon, nitrogen, and oxygen.

[0125] Photomask Fig. 5 is a conceptual diagram illustrating a photomask according to another embodiment of the present specification. Fig. 6 is a conceptual diagram illustrating a method for measuring the Mtr value on the surface of a light-shielding pattern film in a photomask. An embodiment will be described with reference to Figs. 5 and 6.

[0126] A photomask 200 according to another embodiment of the present specification includes a light-transmitting substrate 10 and a light-shielding pattern film 25 located on the light-transmitting substrate 10 .

[0127] The light-shielding pattern film 25 contains a transition metal and at least one of oxygen and nitrogen.

[0128] The Mtr value of the following formula 1 on the upper surface of the light-shielding pattern film 25 is 6 or less.

[0129] [Formula 1] Mtr = |Rsk| × Rku

[0130] In the above formula 1, |Rsk| is the absolute value of the Rsk value.

[0131] The method for measuring the Mtr value on the upper surface of the light-shielding pattern film 25 is the same as the method for measuring the Mtr value on the surface of the light-shielding film 20 using the blank mask 100. However, the measurement area A is set as an arbitrary area on the upper surface of the light-shielding pattern film 25 located in the photomask, and the Mtr value is measured.

[0132] The light-shielding pattern film 25 can be manufactured by patterning the light-shielding film of the blank mask 100 described above.

[0133] Descriptions of the surface roughness characteristics, ease of removal of the resist pattern film, composition, film thickness, optical characteristics, etc. of the light-shielding pattern film 25 will be omitted since they overlap with the description of the light-shielding film 20 of the blank mask 100.

[0134] Manufacturing method of light-shielding film A method for manufacturing the blank mask 100 according to an embodiment of the present disclosure may include the preparation steps of: placing an optically transparent substrate 10 and a sputtering target in a sputtering chamber.

[0135] A manufacturing method of the blank mask 100 according to one embodiment of the present specification may include a deposition step of injecting an atmospheric gas into a sputtering chamber and applying power to a sputtering target to form a pre-heat-treated substrate having a light-shielding film 20 deposited on a light-transmitting substrate 10.

[0136] A method for manufacturing the blank mask 100 according to an embodiment of the present specification may include a heat treatment step of heat treating the substrate before the heat treatment at 150 to 330° C. for 5 to 30 minutes to form a substrate before a cooling treatment.

[0137] The method for manufacturing the blank mask 100 according to an embodiment of the present specification may include a stabilization step of stabilizing the substrate before the cooling process at 30 to 50° C. for 1 to 5 minutes.

[0138] A method for manufacturing a blank mask 100 according to one embodiment of the present specification may include a cooling step of directly spraying cooling water onto the surface of the substrate on the light-transmitting substrate side and the surface of the substrate on the light-shielding film side before the cooling process to produce a blank mask.

[0139] A method for manufacturing the blank mask 100 according to an embodiment of the present disclosure may include a cleaning step of cleaning the blank mask with a cleaning solution.

[0140] The film forming step includes a first light-shielding layer forming process of forming a first light-shielding layer on a light-transmitting substrate, and a second light-shielding layer forming process of forming a second light-shielding layer on the first light-shielding layer.

[0141] In the preparation step, a target to be applied for forming the light-shielding film can be selected in consideration of the composition of the light-shielding film. The sputtering target may be one target containing a transition metal. The sputtering target may be two or more targets including one target containing a transition metal. The target containing a transition metal may contain 90 at% or more of the transition metal. The target containing a transition metal may contain 95 at% or more of the transition metal. The target containing a transition metal may contain 99 at% of the transition metal.

[0142] The transition metal may include at least one of Cr, Ta, Ti, and Hf. The transition metal may include Cr.

[0143] The light-transmitting substrate 10 disposed in the sputtering chamber will be omitted since it is the same as that described above.

[0144] In the step of forming the light-shielding film 20, different conditions for the film formation process may be applied when forming each layer included in the light-shielding film 20. In particular, in consideration of the surface roughness characteristics, extinction characteristics, and etching characteristics of the light-shielding film 20, conditions such as the composition of the atmospheric gas, the pressure in the chamber, the power applied to the sputtering target, the film formation time, and the rotation speed of the substrate may be applied differently for each layer.

[0145] The atmosphere gas may include an inert gas, a reactive gas, and a sputtering gas. The inert gas is a gas that does not include an element that constitutes the light-shielding film. The reactive gas is a gas that includes an element that constitutes the light-shielding film. The sputtering gas is a gas that is ionized in a plasma atmosphere and collides with a target. The inert gas may include helium. The reactive gas may include a gas that includes nitrogen. The nitrogen-containing gas may be, for example, N2, NO, NO2, N2O, N2O3, N2O4, N2O5, etc. The reactive gas may include a gas that includes oxygen. The oxygen-containing gas may be, for example, O2, CO2, etc. The reactive gas may include a gas that includes nitrogen and a gas that includes oxygen. The reactive gas may include a gas that includes both nitrogen and oxygen. The nitrogen-containing gas may be, for example, NO, NO2, N2O, N2O3, N2O4, N2O5, etc.

[0146] The sputtering gas may be argon (Ar) gas.

[0147] The power source for applying power to the sputtering target may be a DC power source or an RF power source.

[0148] In the process of forming the first light-shielding layer, the power applied to the sputtering target may be 1.5 to 2.5 kW, or 1.6 to 2 kW.

[0149] In the process of forming the first light-shielding layer, the ratio of the flow rate of the reactive gas to the flow rate of the inert gas in the atmospheric gas may be 1.5 to 3. The flow rate ratio may be 1.8 to 2.7. The flow rate ratio may be 2 to 2.5.

[0150] The ratio of the oxygen content to the nitrogen content contained in the reactive gas may be 1.5 to 4. The ratio of the oxygen content to the nitrogen content contained in the reactive gas may be 2 to 3. The ratio of the oxygen content to the nitrogen content contained in the reactive gas may be 2.2 to 2.7.

[0151] In this case, the first light-shielding layer can help the light-shielding film to have sufficient extinction properties, and by controlling the etching properties of the first light-shielding layer, it can help the side of the patterned light-shielding film to be formed in a shape nearly perpendicular to the light-transmitting substrate.

[0152] The process of forming the first light-shielding layer may be performed for 200 to 300 seconds. The process of forming the first light-shielding layer may be performed for 210 to 240 seconds. In this case, the first light-shielding layer can help the light-shielding film to have sufficient extinction properties.

[0153] In the process of forming the second light-shielding layer, the power applied to the sputtering target may be 1 to 2 kW. The power may be 1.2 to 1.7 kW. In such a case, it is possible to contribute to improving the adhesion of the resist pattern of the light-shielding film and the convenience of removal.

[0154] In the process of forming the second light-shielding layer, the ratio of the flow rate of the reactive gas to the flow rate of the inert gas in the atmospheric gas may be 0.3 to 0.8, or the flow rate ratio may be 0.4 to 0.6.

[0155] In the process of forming the second light-shielding layer, the ratio of the oxygen content to the nitrogen content contained in the reactive gas may be 0.3 or less, 0.1 or less, or 0.001 or more.

[0156] In this case, the shape of the resist pattern located on the surface of the second light-shielding layer can be stably maintained. In addition, it is possible to easily remove the resist pattern from the second light-shielding layer without leaving any residue. The etching rate of the second light-shielding layer is relatively low compared to the first light-shielding layer, and the side of the patterned light-shielding film can have a shape that is relatively close to perpendicular to the light-transmitting substrate.

[0157] The second light-shielding layer may be formed for 10 to 30 seconds. The second light-shielding layer may be formed for 15 to 25 seconds. In this case, it is possible to help the side surface of the light-shielding pattern film to have a shape close to a vertical profile.

[0158] In the heat treatment step, the pre-heat treatment substrate can be heat-treated to form a pre-cooling substrate, specifically, the pre-heat treatment substrate can be placed in a heat treatment chamber and then heat-treated.

[0159] In the heat treatment step, the atmospheric temperature may be 150 to 330° C. The atmospheric temperature may be 170 to 280° C. The atmospheric temperature may be 200 to 250° C. In such a case, it can help to control the surface roughness characteristics of the surface of the light-shielding film within a preset range, and excessive growth of particles in the light-shielding film 20 can be substantially suppressed.

[0160] In the heat treatment step, the heat treatment time may be 5 to 30 minutes. The heat treatment time may be 10 to 20 minutes. In such a case, the heat treatment step can control the surface roughness characteristics of the light-shielding film within an appropriate range.

[0161] The heat treatment step may be performed once. The heat treatment step may be performed two or more times.

[0162] When the heat treatment is performed again on the light-shielding film that has been subjected to the heat treatment, the atmospheric temperature may be 80 to 250° C. The atmospheric temperature may be 100 to 200° C. In such a case, excessive growth of particles in the light-shielding film caused by performing the heat treatment again can be effectively suppressed, and the light-shielding film can have excellent resist adhesion and ease of removal.

[0163] In the stabilization step, the substrate before the cooling process can be stabilized. If the substrate before the cooling process is cooled immediately, the substrate may be significantly damaged due to a sudden temperature change. In order to prevent this, the stabilization step may be necessary.

[0164] There may be various methods for stabilizing the substrate before the cooling process. As an example, the substrate before the cooling process may be taken out of the heat treatment chamber and left in the air for a predetermined time. As another example, the substrate before the cooling process may be taken out of the heat treatment chamber and stabilized at 30 to 50°C for 1 to 5 minutes. At this time, the substrate before the cooling process may be rotated at 20 to 50 rpm for 1 to 5 minutes. As yet another example, a gas that does not react with the blank mask may be sprayed onto the substrate before the cooling process at a flow rate of 5 to 10 L / min for 1 to 5 minutes. At this time, the gas that does not react with the blank mask may have a temperature of 20 to 40°C.

[0165] In the cooling step, the substrate before the cooling process can be cooled to manufacture a blank mask. In the cooling step, the substrate before the cooling process can be cooled by a water-cooling method. Specifically, the surface on the light-transmitting substrate side and the surface on the light-shielding film side can be directly sprayed with cooling water to cool them. It has been experimentally confirmed that when the cooling step is performed by directly spraying cooling water on the surface on the light-shielding film side, the Rsk value of the surface of the light-shielding film is higher and the Rku value is lower than those of the air-cooling method. This is believed to be because the sudden temperature change applied to the surface of the heated light-shielding film and the friction physically applied to the surface of the light-shielding film by the cooling water have an effective effect on the roughness characteristics of the surface of the light-shielding film, particularly the peak / valley distribution and the kurtosis of the peaks.

[0166] The temperature of the cooling water applied in the cooling step may be 10 to 30° C. In this case, roughness characteristics such as skewness and kurtosis of the fine irregularities on the surface of the light-shielding film can be effectively controlled.

[0167] The cooling water may be a fluid that does not induce chemical denaturation of the light-shielding film. The cooling water may be H2O.

[0168] One or more nozzles for spraying cooling water may be provided on the surface of the light-shielding film.One or more nozzles for spraying cooling water may be provided on each of the surface of the light-shielding film and the surface of the substrate.

[0169] When two or more nozzles are disposed on one surface of the blank mask, the angle formed between the nozzles when observed on the one surface may be 60° or more. For example, the angle formed between the nozzles may be 90°.

[0170] The nozzle may be disposed at a position spaced apart from the surface of the light-shielding film by 5 to 20 mm.The nozzle may be disposed at a position spaced apart from the surface of the light-shielding film and the surface of the substrate by 5 to 20 mm.

[0171] The nozzle may be installed at an angle of 30 to 75° with the surface on the light-shielding film side. The nozzle may be installed at an angle of 45 to 60° with the surface on the light-shielding film side. The nozzle may be installed at an angle of 30 to 75° with the surface of the substrate. The nozzle may be installed at an angle of 45 to 60° with the surface of the substrate. The nozzle may be installed so as to face a position away from the center of the blank mask to be cooled. As an example, the nozzle may be installed so as to face a position about 10 mm away from the center of the blank mask to be cooled. In this case, damage to the light-shielding film caused by the injection of cooling water can be minimized, and the surface roughness characteristics of the light-shielding film can be effectively controlled.

[0172] After completing the arrangement of the nozzles on the surface on the light-shielding film side and the surface on the light-transmitting substrate side, the roughness characteristics of the surface of the light-shielding film can be controlled by directly spraying cooling water through the nozzles.

[0173] The total flow rate of the cooling water sprayed onto the surface side of the light-shielding film may be 0.5 to 1.5 L / min. The total flow rate of the cooling water may be 0.8 to 1.2 L / min. In such a case, the kurtosis and skewness of the surface of the light-shielding film can be substantially controlled without damaging the blank mask.

[0174] The total flow rate of the cooling water sprayed onto the front surface side of the light-transmitting substrate may be 0.5 to 1.5 L / min. The total flow rate of the cooling water may be 0.8 to 1.2 L / min. In such a case, the temperature distribution in the thickness direction of the blank mask can be controlled to be relatively uniform.

[0175] The cooling time may be 2 to 15 minutes. The cooling time may be 3 to 10 minutes. In such a case, the resist pattern formed on the surface of the light-shielding film is stably maintained, which can contribute to removing the resist pattern without leaving any residue.

[0176] After the cooling step using the cooling water is completed, the blank mask is rotated to remove the cooling water present on the surface of the blank mask. Specifically, the blank mask is rotated at 1000 to 2000 rpm for 30 to 60 seconds, and then decelerated at a constant acceleration for 10 to 60 seconds to stop the rotation of the blank mask.

[0177] In the cleaning step, the blank mask can be cleaned with a cleaning solution. Through the cleaning step, residues on the surface of the light-shielding film can be removed. The cleaning step includes a cleaning solution spraying process of spraying a cleaning solution onto the blank mask, and a rinsing process of removing the cleaning solution present on the surface of the blank mask using a rinsing solution.

[0178] In the cleaning solution spraying process, the cleaning solution may be, for example, SC-1 (standard clean-1) solution. The SC-1 solution is a mixed solution of ammonia water, hydrogen peroxide and water. The SC-1 solution may contain 10 to 20 parts by weight of ammonia water, 10 to 20 parts by weight of hydrogen peroxide and 60 to 80 parts by weight of water. The cleaning solution spraying process may be performed for 60 to 600 seconds.

[0179] In the rinsing process, the cleaning liquid present on the surface of the blank mask can be removed by the rinsing liquid, which may be, for example, ozone water.

[0180] The blank mask manufactured by the above-mentioned manufacturing method includes a light-transmitting substrate and a light-shielding film located on the light-transmitting substrate.

[0181] The light-shielding film contains a transition metal and at least one of oxygen and nitrogen.

[0182] The Mtr value of the surface of the light-shielding film in formula 1 is 6 or less.

[0183] The light-shielding film was cooled by directly spraying cooling water onto the surface of the light-shielding film.

[0184] The description of the blank mask will be omitted since it overlaps with the above description.

[0185] Specific examples will be described in more detail below.

[0186] Manufacturing example: Light-shielding film formation Comparative Example 1: A light-transmitting substrate made of quartz, measuring 6 inches wide, 6 inches long, and 0.25 inches thick, was placed in the chamber of a DC sputtering device. A chromium target was placed in the chamber so that the T / S distance was 255 mm and the angle between the substrate and the target was 25°.

[0187] Thereafter, an atmospheric gas mixture of 19 volume percent Ar, 11 volume percent N, 36 volume percent CO, and 34 volume percent He was introduced into the chamber, and the power applied to the sputtering target was set to 1.85 kW to perform a sputtering process for 230 to 330 seconds to form a first light-shielding layer.

[0188] After completing the deposition of the first light-shielding layer, an atmospheric gas containing a mixture of 57 volume percent Ar and 43 volume percent N2 was introduced into the chamber, and a power of 1.5 kW was applied to the sputtering target to deposit a second light-shielding layer to produce a test specimen.

[0189] Example 1: After preparing a substrate before heat treatment under the same conditions as Comparative Example 1, the substrate before heat treatment was placed in a heat treatment chamber. Thereafter, the substrate before cooling treatment was prepared by applying an atmospheric temperature of 250° C. and performing heat treatment for 15 minutes. The substrate before cooling treatment was taken out of the heat treatment chamber and stabilized by rotating at 30 rpm for 2 minutes in an atmosphere of 40° C. The substrate before cooling treatment after the stabilization step was cooled by a water cooling method. Specifically, one nozzle was installed on the light-shielding film side of the substrate before cooling treatment after the stabilization step, and two nozzles were installed on the substrate side. Specifically, one nozzle was installed so that the angle between the nozzle and the surface of the light-shielding film was 60° and the direction of the nozzle was directed to a position about 10 mm away from the center of the substrate before cooling treatment. In addition, two nozzles were installed so that the angle between the nozzle and the surface of the light-transmitting substrate was 60° and the angle between the nozzles was 90° when observed on the upper surface of the light-transmitting substrate, and the angle between the nozzles was directed to a position about 10 mm away from the center of the substrate before cooling treatment.

[0190] Thereafter, cooling water was directly sprayed onto the substrate before cooling treatment through the nozzle for 5 minutes to produce a blank mask specimen. The amount of cooling water sprayed from the nozzle located on the light-shielding film was set to 1.1 L / min, and the amount of cooling water sprayed from each nozzle located on the substrate was set to 0.55 L / min. H2O at 25°C was used as the cooling water.

[0191] After the cooling treatment, the blank mask specimen was rotated at 1500 rpm for 40 seconds, and then decelerated at a constant rate for 15 seconds before being stopped.

[0192] Example 2: A substrate before heat treatment was manufactured under the same conditions as Comparative Example 1, and then the substrate before heat treatment was placed in a heat treatment chamber. Then, the ambient temperature was set to 200°C and heat treatment was performed for 15 minutes to manufacture a substrate before cooling treatment. The substrate before cooling treatment after heat treatment was stabilized in the same manner as in Example 1. The substrate before cooling treatment that had undergone the stabilization step was cooled by a water cooling method. The cooling treatment conditions were the same as in Example 1, except that H2O at 20°C was used as the cooling water.

[0193] Example 3: A substrate before heat treatment was manufactured under the same conditions as Comparative Example 1, and then the substrate before heat treatment was placed in a heat treatment chamber. Thereafter, a first heat treatment was performed for 15 minutes at an atmospheric temperature of 250°C. After the first heat treatment was completed, a second heat treatment was performed for 15 minutes at an atmospheric temperature of 150°C to manufacture a substrate before cooling treatment. The substrate before cooling treatment after the second heat treatment was stabilized under the same conditions as Example 1. The substrate before cooling treatment after the stabilization step was cooled using a water cooling method. The cooling treatment conditions were the same as Example 1.

[0194] Example 4: A substrate before heat treatment was manufactured under the same conditions as those of Comparative Example 1, and then the substrate before heat treatment was placed in a heat treatment chamber. Thereafter, the ambient temperature was set to 250°C and heat treatment was performed for 15 minutes to manufacture a substrate before cooling treatment. The substrate before cooling treatment after the heat treatment was stabilized under the same conditions as those of Example 1. The substrate before cooling treatment that had undergone the stabilization step was cooled using a water cooling method to manufacture a blank mask specimen. The cooling treatment conditions were the same as those of Example 1, except that H2O at 20°C was used as the cooling water.

[0195] Comparative Example 2: A substrate before heat treatment was manufactured under the same conditions as Comparative Example 1, and the substrate before heat treatment was placed in a heat treatment chamber. Then, the substrate before heat treatment was manufactured by performing heat treatment for 10 minutes at an ambient temperature of 250°C. The substrate before cooling treatment after the heat treatment was removed from the heat treatment chamber and stabilized by rotating at 30 rpm for 2 minutes in an ambient temperature of 40°C. The substrate before cooling treatment after the stabilization step was cooled by air cooling at an ambient temperature of 25°C for 5 minutes to manufacture a blank mask specimen. The gas used for the cooling treatment was air.

[0196] Comparative Example 3: A substrate before heat treatment was manufactured under the same conditions as Comparative Example 1, and the substrate before heat treatment was placed in a heat treatment chamber. Thereafter, a first heat treatment was performed for 15 minutes at an atmospheric temperature of 250°C. After the first heat treatment was completed, a second heat treatment was performed for 15 minutes at an atmospheric temperature of 350°C to manufacture a substrate before cooling treatment. The substrate before cooling treatment after the second heat treatment was stabilized under the same conditions as Example 1. The substrate before cooling treatment that had undergone the stabilization step was cooled under the same cooling treatment conditions as Comparative Example 2 to manufacture a blank mask specimen.

[0197] The heat treatment and cooling conditions for each of the examples and comparative examples are shown in Table 1 below.

[0198] Evaluation example: Surface roughness measurement The Rsk and Rku values ​​of the surface of the light-shielding films of Examples 1 to 4 and Comparative Examples 1 to 3 were measured in accordance with ISO_4287, and the Mtr values ​​were calculated from the Rsk and Rku values.

[0199] Specifically, the Rsk and Rku values ​​were measured in a region of 1 μm wide and 1 μm long in the center of the light-shielding film at a scan speed of 0.5 Hz in non-contact mode using Park System's XE-150 model, which uses Park System's cantilever model PPP-NCHR as a probe.

[0200] Thereafter, the Mtr value was calculated from the Rsk value and Rku value measured for each of the examples and comparative examples.

[0201] The measurement results for each of the examples and comparative examples are shown in Table 2 below.

[0202] Evaluation example: Measuring the amount of remaining resist For each of the examples and comparative examples, the Do value, which is the weight of a blank mask before a resist film is formed on the light-shielding film, was measured.

[0203] Then, for each example and comparative example, a resist solution was sprayed and coated on the light-shielding film by using a spin coating method, and the coated resist solution was dried at 140° C. for 620 seconds to form a resist film with a thickness of 1,300 Å.

[0204] The resist solution used was Fuji's XFP255 model.

[0205] The weight Ds value of the blank mask was measured after removing the resist film. The resist film was removed by dipping in a peroxymonosulfuric acid aqueous solution, which is a mixed solution of sulfuric acid and hydrogen peroxide.

[0206] The Dw value was calculated from the Ds and Do values ​​for each of the examples and comparative examples.

[0207] The measurement results for each of the examples and comparative examples are shown in Table 2 below.

[0208] [Table 1]

[0209] [Table 2]

[0210] In Table 2, Examples 1 to 4 showed Mtr values ​​of 6 or less, while Comparative Examples 1 to 3 showed Mtr values ​​of 7 or more.

[0211] With regard to the Dw value, Examples 1 to 4 showed values ​​of 0.01% or less, while Comparative Examples 1 to 3 showed values ​​exceeding 0.01%.

[0212] Although the preferred embodiments have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the embodiments defined in the appended claims also fall within the scope of the present invention. [Explanation of symbols]

[0213] 100 Blank Mask 10 Light-transparent substrate 20 Light-shielding film 21 1st light shielding layer 22 Second light shielding layer 25 Light-shielding pattern film 30 Phase inversion film 40 Resist film 200 Photomasks A Area where Rsk and Rku values ​​can be measured in the light-shielding film pattern of the photomask

Claims

1. A light-transmitting substrate and a light-shielding film located on the light-transmitting substrate, the light-shielding film contains a transition metal and at least one of oxygen and nitrogen, The transition metal includes Cr, the Mtr value of the surface of the light-shielding film as determined by the following formula 1 is 6 or less, the Rsk value of the surface of the light-shielding film is equal to or greater than -1 and equal to or less than 1; A blank mask, wherein the Rku value of the surface of the light-shielding film is 3 or less. [Formula 1] Mtr=|Rsk|×Rku In the above formula 1, The |Rsk| is the absolute value of the Rsk value.

2. The blank mask of claim 1 , wherein the Rsk value is less than or equal to 0.

1.

3. The blank mask according to claim 1 , wherein the light-shielding film has a Dw value of 0.01% or less as determined by the following formula 2: [Formula 2] In the formula 2, Ds is the weight of the blank mask measured after applying a resist film to a thickness of 1300 Å on the light-shielding film, drying the resist film, and removing the resist film; The weight Do is the weight of the blank mask measured before the resist film is applied onto the light-shielding film.

4. the light-shielding film includes a first light-shielding layer and a second light-shielding layer located on the first light-shielding layer, 2. The blank mask according to claim 1, wherein the combined nitrogen content and oxygen content of the second light-shielding layer is 10 to 35 atomic %.

5. A light-transmitting substrate and a light-shielding pattern film located on the light-transmitting substrate, the light-shielding pattern film contains a transition metal and at least one of oxygen and nitrogen, The transition metal includes Cr, the Mtr value of the upper surface of the light-shielding pattern film as determined by the following formula 1 is 6 or less, the Rsk value of the surface of the light-shielding pattern film is −1 or more and 1 or less; The photomask, wherein the Rku value of the surface of the light-shielding pattern film is 3 or less. [Formula 1] Mtr=|Rsk|×Rku In the above formula 1, The |Rsk| is the absolute value of the Rsk value.

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