The invention relates to a secondary
etching deviation calculation method, a secondary
etching pattern and a production method thereof. The secondary
etching deviation calculation method comprises the following steps: receiving a secondary etching pattern; the secondary etching pattern comprises an
overlay calibration pattern obtained through the same
overlay and a defect control group; the defect secondary
exposure pattern is a pattern obtained after light-proof defects formed in primary
exposure are repaired through secondary
exposure; measuring the
overlay calibration pattern to obtain an alignment error, measuring the defect-free reference pattern to obtain a corresponding reference
size value, and then measuring the defect secondary exposure pattern to obtain a corresponding test
size value; the alignment error, the
reference dimension value and the test dimension value are dimension values after
photoresist removal; and obtaining a
mask secondary etching deviation value according to the alignment error, the reference
size value and the test size value. After the alignment error is eliminated, the accuracy of the secondary etching deviation value of the
mask is improved, and the success rate of secondary repair is improved.