Substrate processing system and maintenance method

Abstract

A substrate processing system comprising a substrate processing device, a vacuum transport chamber, a transport mechanism, a suction mechanism, and a control unit. The substrate processing device includes a vacuum processing chamber in which vacuum processing is performed on a substrate. The vacuum transport chamber is connected to the vacuum processing chamber, and includes a transport opening that can be communicated with the vacuum processing chamber. The transport mechanism is disposed in the vacuum transport chamber to transport the substrate through the transport opening. The suction mechanism is disposed in the vacuum transport chamber adjacent to the transport mechanism, to suction a deposit on a component in the vacuum processing chamber through the transport opening. The control unit controls the transport mechanism and the suction mechanism.

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing system and a maintenance method. [Background technology]

[0002] There are substrate processing apparatuses in which substrates such as semiconductor wafers (hereinafter referred to as "wafers") are placed in a vacuum processing chamber in a vacuum state and various processes are performed to process the substrates. In such substrate processing apparatuses, when various processes are performed in the vacuum processing chamber, reaction products, fine particles, etc. accumulate and adhere to the inside of the vacuum processing chamber as adhesions. For this reason, the vacuum processing chamber is periodically opened to the atmosphere and cleaned. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2004-14969 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of highly efficiently cleaning the inside of a vacuum processing chamber without being exposed to the atmosphere. [Means for solving the problem]

[0005] A substrate processing system according to one aspect of the present disclosure includes a substrate processing apparatus, a vacuum transfer chamber, a transfer mechanism, a suction mechanism, and a controller. The substrate processing apparatus includes a vacuum processing chamber in which vacuum processing is performed on a substrate. The vacuum transfer chamber includes a transfer port that is connected to the vacuum processing chamber and can communicate with the vacuum processing chamber. The transfer mechanism is disposed in the vacuum transfer chamber and transfers the substrate via the transfer port. The suction mechanism is disposed in the vacuum transfer chamber adjacent to the transfer mechanism and sucks up adhesions on components in the vacuum processing chamber via the transfer port. The controller controls the transfer mechanism and the suction mechanism. Effect of the Invention

[0006] According to the present disclosure, it is possible to provide an advantage that the inside of a vacuum processing chamber can be cleaned with high efficiency without being exposed to the atmosphere. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic configuration diagram of a substrate processing system according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a diagram illustrating an example of a process module included in the substrate processing system according to the embodiment. [Diagram 3] FIG. 3 is a vertical cross-sectional view showing an example of an internal configuration of a vacuum transfer chamber according to the embodiment. [Figure 4] FIG. 4 is a diagram showing details of the suction mechanism according to the embodiment. [Diagram 5] FIG. 5 is a diagram showing an example of the arrangement of the suction port, the supply port, the irradiation unit, and the imaging unit according to the embodiment. [Figure 6] FIG. 6 is a diagram showing another example of the arrangement of the suction port, the supply port, the irradiation unit, and the imaging unit according to the embodiment. [Figure 7] FIG. 7 is a diagram showing a configuration of a head unit according to a modified example of the embodiment. [Figure 8] FIG. 8 is a flowchart showing an example of a processing operation of the substrate processing system according to the embodiment. [Figure 9A] FIG. 9A is a view for explaining an example of an operation performed when the edge ring is carried out from the processing vessel and the mounting table is cleaned. [Figure 9B] FIG. 9B is a view for explaining an example of an operation performed when the edge ring is carried out from the processing vessel and the mounting table is cleaned. [Figure 10] FIG. 10 is a flowchart showing an example of a process for cleaning the mounting table. [Figure 11A] FIG. 11A is a view for explaining an example of an operation performed when an edge ring is carried into a processing vessel. [Figure 11B] FIG. 11B is a view for explaining an example of an operation performed when the edge ring is carried into the processing vessel. [Figure 11C] FIG. 11C is a view for explaining an example of an operation performed when the edge ring is carried into the processing vessel. [Figure 11D] FIG. 11D is a view for explaining an example of an operation performed when the edge ring is carried into the processing vessel. [Figure 12] FIG. 12 is a flowchart illustrating an example of a process for correcting the position of the edge ring after insertion. [Figure 13] FIG. 13 is a diagram showing an example of an imaging position in the imaging section. [Figure 14] FIG. 14 is a diagram showing an example of an operation for cleaning a pedestal in a load lock module. [Figure 15] FIG. 15 is a diagram showing an example of an operation for cleaning the bottom surface of the vacuum transfer chamber. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of a substrate processing system and a maintenance method disclosed in the present application will be described in detail with reference to the drawings. Note that the same or corresponding parts in each drawing are denoted by the same reference numerals. Furthermore, the processing apparatus disclosed is not limited to the present embodiment.

[0009] However, in a substrate processing apparatus, cleaning the vacuum processing chamber by opening it to the atmosphere may cause downtime of the vacuum processing, which may result in reduced productivity. Therefore, there is a need for a method for efficiently cleaning the inside of the vacuum processing chamber without opening it to the atmosphere.

[0010] (Configuration Example of Substrate Processing System According to the Embodiment) FIG. 1 is a schematic configuration diagram of a substrate processing system 1 according to an embodiment.

[0011] The substrate processing system 1 includes a plurality of process modules PM (PM1 to PM5), a storage chamber ST, a vacuum transfer chamber 11, and a plurality of load lock modules (load lock chambers) LLM (LLM1, LLM2). The substrate processing system 1 also includes a normal pressure transfer chamber 12, a plurality of load ports LP (LP1 to LP4), and a controller 10.

[0012] In the example of FIG. 1, five process modules PM1 to PM5, two load lock modules LLM1 and LLM2, and four load ports LP1 to LP4 are shown. However, the numbers of process modules PM, load lock modules LLM, and load ports LP of the substrate processing system 1 are not limited to those shown in the figure. Hereinafter, unless there is a particular need to distinguish between them, the five process modules PM1 to PM5 are collectively referred to as process modules PM. Similarly, the two load lock modules LLM1 and LLM2 are collectively referred to as load lock modules LLM. Similarly, the four load ports LP1 to LP4 are collectively referred to as load ports LP.

[0013] The process module PM processes a semiconductor substrate, i.e., a wafer W, in a vacuum atmosphere. The process module PM is an example of a vacuum processing device. The process module PM performs processes such as etching and film formation. The process module PM includes a mounting stage that supports the wafer W and an edge ring ER that is disposed on the mounting stage to surround the wafer W.

[0014] The process module PM is connected to the vacuum transfer chamber 11 via an openable and closable gate valve G. The gate valve G is closed while processing of a wafer W is being performed in the process module PM. The gate valve G is opened when a processed wafer W is transferred out of the process module PM and when an unprocessed wafer W is transferred into the process module PM. The gate valve G is also opened when an edge ring ER is transferred in or out of the process module PM. The process module PM is provided with a gas supply unit for supplying a predetermined gas and an exhaust unit capable of vacuum drawing. Details of the process module PM will be described later.

[0015] The storage chamber ST stores the edge ring ER. Inside the storage chamber ST, a plurality of support stages are provided at a predetermined interval in the vertical direction. The support stage arranged on the upper stage of the plurality of support stages is a stage on which the edge ring ER to be replaced is placed. The edge ring ER to be replaced may be, for example, a new edge ring that is unused. The edge ring ER to be replaced may be a used edge ring that has been used but has a relatively small amount of wear. The support stage arranged on the lower stage of the plurality of support stages is a stage on which the used edge ring ER or the edge ring ER to be temporarily evacuated is placed. The support stage on the lower stage is empty. The storage chamber ST is provided with an exhaust mechanism, for example, a vacuum pump and a leak valve, and can switch the atmosphere in the storage chamber ST between the air (normal pressure) atmosphere and the vacuum (reduced pressure) atmosphere. The storage chamber ST is configured to be able to communicate with the vacuum transfer chamber 11 via a transfer port used for loading and unloading the edge ring ER. A gate valve G that can be opened and closed is provided at the transfer port.

[0016] The vacuum transfer chamber 11 has a gas supply unit (not shown) and an exhaust unit capable of vacuum drawing, and can maintain a vacuum atmosphere inside. The vacuum transfer chamber 11 is connected to the process module PM and the load lock module LLM. The vacuum transfer chamber 11 is configured to be able to communicate with the process module PM and the load lock module LLM via a transfer port used for loading and unloading the wafer W and edge ring ER. An openable and closable gate valve G is provided at the transfer port.

[0017] A transfer mechanism 15 for transferring a wafer W and an edge ring ER (hereinafter also referred to as a transfer object) is disposed in the vacuum transfer chamber 11. The transfer mechanism 15 transfers the wafer W between the process modules PM1 to PM5 and the load lock modules LLM1 and LLM2. For example, when transferring the wafer W from the load lock module LLM to the process module PM and performing vacuum processing on the wafer W in the process module PM, the transfer mechanism 15 takes out the wafer W from the load lock module LLM. Then, the transfer mechanism 15 transfers the wafer W taken out from the load lock module LLM from the vacuum transfer chamber 11 into the process module PM through the transfer port. Also, for example, when transferring the wafer W processed in the process module PM to the load lock module LLM, the transfer mechanism 15 takes out the wafer W from the process module PM through the transfer port. Then, the transfer mechanism 15 transfers the wafer W taken out from the process module PM from the vacuum transfer chamber 11 to the load lock module LLM through the transfer port. The transfer mechanism 15 also transfers the edge ring ER between the process modules PM1 to PM5 and the storage chamber ST. For example, when the edge ring ER is transferred from the process module PM to the storage chamber ST and stored in the storage chamber ST, the transfer mechanism 15 transfers the edge ring ER out of the process module PM through the transfer port. Then, the transfer mechanism 15 transfers the edge ring ER transferred out of the process module PM from the vacuum transfer chamber 11 to the storage chamber ST through the transfer port. Also, for example, when the edge ring ER that has been temporarily transferred out of the process module PM and retreated to the support table in the storage chamber ST is transferred again to be placed on the mounting table in the process module PM, or when a replacement edge ring ER is transferred from the storage chamber ST to the process module PM and placed on the mounting table in the process module PM, the transfer mechanism 15 takes out the edge ring ER from the storage chamber ST through the transfer port. Then, the transfer mechanism 15 carries the edge ring ER taken out of the storage chamber ST into the process module PM from the vacuum transfer chamber 11 through the transfer port.

[0018] Further, a suction mechanism 110 is disposed in the vacuum transfer chamber 11. The suction mechanism 110 sucks up adherent matter on the mounting table in a vacuum processing chamber (a processing vessel 30 described below) of the process module PM through a transfer port of the vacuum transfer chamber 11. The details of the suction mechanism 110 will be described later.

[0019] The load lock modules LLM are arranged side by side along two sides of the vacuum transfer chamber 11 where the process modules PM and the storage chamber ST are not arranged. The load lock modules LLM are configured to be able to communicate with the vacuum transfer chamber 11 through a gate valve G. The load lock modules LLM have a stage for placing a wafer W thereon and support pins for raising and lowering the wafer W. The support pins may have the same configuration as the first lifter pins and the second lifter pins in the process modules PM. The load lock module LLM includes an exhaust mechanism, for example, a vacuum pump and a leak valve, and can switch the atmosphere of the load lock module LLM between the air (normal pressure) atmosphere and a vacuum (reduced pressure) atmosphere.

[0020] The load lock module LLM is connected to an atmospheric pressure transfer chamber 12 on the side opposite to the side connected to the vacuum transfer chamber 11. The load lock module LLM and the atmospheric pressure transfer chamber 12 are configured to be able to communicate with each other through a gate valve G.

[0021] The atmospheric pressure transfer chamber 12 is maintained in an atmospheric (atmospheric pressure) atmosphere. In the example of FIG. 1, the atmospheric pressure transfer chamber 12 has a substantially rectangular shape when viewed from above. A plurality of load lock modules LLM are arranged side by side on one long side of the atmospheric pressure transfer chamber 12. A plurality of load ports LP are arranged side by side on the other long side of the atmospheric pressure transfer chamber 12. Each load port LP has a carrier in which a wafer W is accommodated. The atmospheric pressure transfer chamber 12 has a transfer mechanism such as an arm, and the transfer mechanism is configured to transfer the wafer W between the load lock modules LLM and the load ports LP.

[0022] 1 has been described as an example in which the storage chamber ST is configured to be able to communicate with the vacuum transfer chamber 11, but the location of the storage chamber ST is not limited thereto, and for example, the storage chamber ST may be provided adjacent to the atmospheric pressure transfer chamber 12. In this case, the edge ring ER is transferred in and out of the process module PM via the atmospheric pressure transfer chamber 12, the load lock module LLM, and the vacuum transfer chamber 11.

[0023] The operation of the substrate processing system 1 configured as above is generally controlled by a control unit 10. The control unit 10 is, for example, a computer including a program, a memory, a CPU, and the like, and controls each unit of the substrate processing system 1.

[0024] (Example of process module PM configuration) 2 is a diagram illustrating an example of a process module PM included in the substrate processing system 1 according to the embodiment. The process module PM illustrated in FIG 2 is a parallel plate type plasma processing apparatus.

[0025] The process module PM has a processing vessel 30 that is airtight and electrically grounded. The processing vessel 30 is an example of a vacuum processing chamber. The processing vessel 30 is cylindrical and made of, for example, aluminum with an anodized coating formed on the surface. The processing vessel 30 defines a processing space in which plasma is generated. A mounting table 31 that horizontally supports a wafer W is accommodated in the processing vessel 30.

[0026] The mounting table 31 has a generally cylindrical shape with the bottom surface facing in the vertical direction, and the upper surface serves as a mounting surface 36d. The mounting surface 36d of the mounting table 31 is slightly smaller in size than the wafer W. The mounting table 31 includes a base 33 and an electrostatic chuck 36.

[0027] The base 33 is made of a conductive metal such as aluminum. The base 33 functions as a lower electrode. The base 33 is supported by an insulating support 34, which is installed at the bottom of the processing vessel 30.

[0028] The electrostatic chuck 36 has a convex substrate placement portion formed in the upper center portion, and the upper surface of the substrate placement portion serves as a placement surface 36d on which the wafer W is placed. The electrostatic chuck 36 is provided in the center of the placement table 31 in a plan view. The electrostatic chuck 36 is an example of a first placement portion on which a substrate is placed. The electrostatic chuck 36 has an electrode 36a and an insulator 36b. The electrode 36a is provided inside the insulator 36b, and a DC power supply 42 is connected to the electrode 36a. The electrostatic chuck 36 is configured to attract the wafer W by Coulomb force when a DC voltage is applied from the DC power supply 42 to the electrode 36a. The electrostatic chuck 36 also has a heater 36c provided inside the insulator 36b. The heater 36c is supplied with power via a power supply mechanism described later to control the temperature of the wafer W.

[0029] In addition, an outer peripheral portion (an example of a second mounting portion) formed of an insulator 36b is provided around the mounting surface 36d of the mounting table 31 and is lower than the mounting surface 36d, and the upper surface of this outer peripheral portion is an ER mounting surface 36f on which an edge ring ER is mounted. An edge ring ER is disposed on the ER mounting surface 36f of the mounting table 31 so as to surround the wafer W mounted on the mounting surface 36d. The edge ring ER is formed of, for example, single crystal silicon. The electrostatic chuck 36 has a pair of electrodes 36g, 36h at a position overlapping the edge ring ER in a top view. The pair of electrodes 36g, 36h are provided inside the insulator 36b. The electrostatic chuck 36 is configured to attract the edge ring ER by Coulomb force when a DC voltage is applied to the pair of electrodes 36g, 36h from a DC power source (not shown). 1 shows a case where the pair of electrodes 36g, 36h are provided in the electrostatic chuck 36, but the pair of electrodes 36g, 36h may be provided in a ring-shaped dielectric body that is separate from the electrostatic chuck 36. In addition, in the example of Fig. 1, a case where the pair of electrodes 36g, 36h constitute bipolar electrodes is shown, but a monopolar electrode may be used instead of the pair of electrodes 36g, 36h. Furthermore, a cylindrical inner wall member 37 made of, for example, quartz is provided so as to surround the periphery of the mounting table 31 and the support table 34.

[0030] In addition, first lifter pins (not shown) are provided on the mounting table 31 so as to be movable up and down from the mounting surface 36d, and second lifter pins (not shown) are provided on the mounting table 31 so as to be movable up and down from the upper surface of the outer periphery of the mounting table 31. When the first lifter pins are raised, the wafer W is lifted from the mounting surface 36d. When the second lifter pins are raised, the edge ring ER is lifted from the upper surface of the outer periphery of the mounting table 31.

[0031] A power feed rod 50 is connected to the base 33. A first RF power supply 40a is connected to the power feed rod 50 via a first matching device 41a, and a second RF power supply 40b is connected to the power feed rod 50 via a second matching device 41b. The first RF power supply 40a is a power supply for generating plasma, and is configured to supply high-frequency power of a predetermined frequency from the first RF power supply 40a to the base 33 of the mounting table 31. The second RF power supply 40b is a power supply for attracting ions (for bias), and is configured to supply high-frequency power of a predetermined frequency lower than that of the first RF power supply 40a to the base 33 of the mounting table 31.

[0032] A flow path 33d is formed inside the base 33. One end of the flow path 33d is connected to a heat transfer fluid inlet pipe 33b, and the other end is connected to a heat transfer fluid outlet pipe 33c. The process module PM is configured to be able to control the temperature of the mounting table 31 by circulating a heat transfer fluid, such as a highly insulating and low-viscosity fluorine-based inert liquid or pure water, through the flow path 33d. The process module PM may be configured to be able to control the temperatures of the wafer W and the edge ring ER separately by providing separate flow paths inside the base 33 corresponding to the regions on which the wafer W and the edge ring ER are mounted, respectively. The process module PM may also be configured to be able to control the temperatures individually by supplying a heat transfer gas to the backside of the wafer W and the edge ring ER. For example, a gas supply pipe for supplying a heat transfer gas (backside gas) such as helium gas to the backside of the wafer W may be provided so as to penetrate the mounting table 31, etc. The gas supply pipe is connected to a gas supply source. With this configuration, the wafer W attracted and held on the upper surface of the mounting table 31 by the electrostatic chuck 36 is controlled to a predetermined temperature.

[0033] Meanwhile, a shower head 46 functioning as an upper electrode is provided above the mounting table 31 so as to face and be parallel to the mounting table 31. The shower head 46 and the mounting table 31 function as a pair of electrodes (upper electrode and lower electrode).

[0034] The shower head 46 is provided on the ceiling wall of the processing vessel 30. The shower head 46 includes a main body 46a and an upper top plate 46b serving as an electrode plate, and is supported on the upper part of the processing vessel 30 via an insulating member 47. The main body 46a is made of a conductive material, such as aluminum having an anodized coating formed on its surface, and is configured so that the upper top plate 46b can be detachably supported on its lower part.

[0035] A gas diffusion chamber 46c is provided inside the main body 46a, and a number of gas flow holes 46d are formed in the bottom of the main body 46a so as to be located below the gas diffusion chamber 46c. In addition, gas introduction holes 46e are provided in the upper top plate 46b so as to penetrate the upper top plate 46b in the thickness direction and overlap with the above-mentioned gas flow holes 46d. With this configuration, the process gas supplied to the gas diffusion chamber 46c is dispersed in a shower-like manner and supplied into the process vessel 30 through the gas flow holes 46d and the gas introduction holes 46e.

[0036] The body 46a is provided with a gas inlet 46g for introducing a processing gas into the gas diffusion chamber 46c. One end of a gas supply pipe 45a is connected to the gas inlet 46g. The other end of the gas supply pipe 45a is connected to a processing gas supply source 45 for supplying a processing gas. The gas supply pipe 45a is provided with a mass flow controller (MFC) 45b and an on-off valve V2 in this order from the upstream side. The processing gas for plasma etching is supplied from the processing gas supply source 45 to the gas diffusion chamber 46c through the gas supply pipe 45a, and is supplied from the gas diffusion chamber 46c to the processing vessel 30 in a shower-like dispersion manner through the gas flow hole 46d and the gas introduction hole 46e.

[0037] A variable DC power supply 48b is electrically connected to the shower head 46 serving as the upper electrode via a low-pass filter (LPF) 48a. The variable DC power supply 48b is configured so that power supply can be turned on and off by an on-off switch 48c. The current and voltage of the variable DC power supply 48b and the on-off of the on-off switch 48c are controlled by a control unit 10, which will be described later. As will be described later, when high frequency power is applied from the first RF power supply 40a and the second RF power supply 40b to the mounting table 31 to generate plasma in the processing space, the control unit 10 turns on the on-off switch 48c as necessary, and a predetermined DC voltage is applied to the shower head 46 serving as the upper electrode.

[0038] In addition, a cylindrical ground conductor 30a is provided so as to extend from the side wall of the processing vessel 30 to a position above the height position of the shower head 46. The cylindrical ground conductor 30a has a ceiling wall at its upper portion.

[0039] An exhaust port 81 is formed at the bottom of the processing vessel 30, and an exhaust device 83 is connected to the exhaust port 81 via an exhaust pipe 82. The exhaust device 83 has a vacuum pump, and is configured such that the inside of the processing vessel 30 can be depressurized to a predetermined vacuum level by operating the vacuum pump.

[0040] Meanwhile, a gate 84 used for loading and unloading the wafer W is provided on a side wall inside the processing vessel 30. The gate 84 is provided with a gate valve G for opening and closing the gate 84. As shown in Fig. 1, the gate 84 is airtightly connected to a transfer port of the vacuum transfer chamber 11 via the gate valve G, so that the wafer W can be loaded and unloaded from the vacuum transfer chamber 11 while maintaining a vacuum atmosphere.

[0041] A deposit shield 86 is provided along the inner wall surface on the inside of the side of the processing vessel 30. The deposit shield 86 prevents reaction products (deposits) generated by the etching process using plasma from adhering to the processing vessel 30. The deposit shield 86 is configured to be freely attached and detached.

[0042] The process module PM having the above configuration is connected to a controller 10 of the substrate processing system 1. The controller 10 controls each part of the process module PM.

[0043] In the process module PM, when various processes are performed in the processing vessel 30, which is a vacuum processing chamber, reaction products, fine particles, and the like are accumulated and adhere to the inside of the processing vessel 30 as adhesions, so that the inside of the processing vessel 30 is periodically cleaned. In the process module PM, when the processing vessel 30 is opened to the atmosphere for cleaning, a considerable amount of time (downtime) is required before the etching process for the wafer W is resumed, such as the time for opening to the atmosphere and the cleaning time, as well as the time for vacuuming the processing vessel 30 to reduce residual moisture in the processing vessel 30 and the time for adjusting the temperature in the processing vessel 30 after the start of vacuuming the processing vessel 30. As a result, the productivity of the process module PM may decrease. For this reason, from the viewpoint of reducing the downtime, it is preferable to clean the inside of the processing vessel 30 without opening to the atmosphere.

[0044] 1 and 2, in the substrate processing system 1 according to the embodiment, a suction mechanism 110 for cleaning the inside of the processing vessel 30 is disposed in the vacuum transfer chamber 11 connected to the processing vessel 30 in the process module PM, adjacent to the transfer mechanism 15 that transfers the wafer W to the processing vessel 30. The suction mechanism 110 sucks up the adhering matter of the object in the processing vessel 30 through a transfer port used for loading and unloading the wafer W by the transfer mechanism 15. This allows the adhering matter of the object in the processing vessel 30 to be sucked from the transfer system side that transfers the wafer W to the processing vessel 30, so that the inside of the processing vessel 30 can be cleaned with high efficiency without being exposed to the atmosphere.

[0045] (Example of configuration of suction mechanism 110) Next, the configuration of the suction mechanism 110 will be described in detail with reference to Figs. 1 and 3. Fig. 3 is a vertical cross-sectional view showing an example of the internal configuration of the vacuum transfer chamber 11 according to the embodiment. Fig. 3 shows a cross section near a connection (joint) between the vacuum transfer chamber 11 and the process module PM. Note that the process module PM is shown in a simplified form in each of the following figures. In the following, the configuration of the suction mechanism 110 will be appropriately described along the flow of cleaning the mounting table 31 as the target object in the processing vessel 30.

[0046] The vacuum transfer chamber 11 has a transfer port 11a and is configured to be able to communicate with a process module PM (processing container 30) via the transfer port 11a. The transfer port 11a communicates with the processing container 30 when a gate valve G provided at a gate 84 of the process module PM is opened. In the example of FIG. 3, the gate valve G of the process module PM is closed.

[0047] A transfer mechanism 15 is disposed in the vacuum transfer chamber 11. The transfer mechanism 15 has an arm portion 15a in which a plurality of arm elements are rotatably connected by a joint, and a fork portion 15b provided at the tip of the arm portion 15a. The arm portion 15a is supported by a support portion 15c. The support portion 15c is configured to be movable in the horizontal direction along a rail 15d (see FIG. 1, omitted in FIG. 3) arranged on the bottom surface of the vacuum transfer chamber 11 and to be able to move up and down in the vertical direction. The fork portion 15b holds the objects to be transferred, that is, the wafer W and the edge ring ER. The transfer mechanism 15 can extend and retract the arm portion 15a in the horizontal direction by bending the joint. The transfer mechanism 15 can move the fork portion 15b at the tip of the arm portion 15a in the vertical direction by raising and lowering the arm portion 15a by the support portion 15c. The transfer mechanism 15 holds the transfer object with the fork portion 15b, and when the gate valve G of the process module PM is opened, the arm portion 15a is extended and retracted to transfer (carry) the transfer object from the vacuum transfer chamber 11 to the processing vessel 30 through the transfer port 11a. The transfer mechanism 15 also extends and retracts the arm portion 15a to transfer (carry) the transfer object from the processing vessel 30 to the vacuum transfer chamber 11 through the transfer port 11a. The operation of the transfer mechanism 15 is generally controlled by the control unit 10.

[0048] The vacuum transfer chamber 11 also has a transfer port 11b and is configured to be able to communicate with the load lock module LLM via the transfer port 11b. The transfer port 11b communicates with the load lock module LLM when a gate valve G of the load lock module LLM is open. In the example of FIG. 3, the gate valve G of the load lock module LLM is closed.

[0049] When the gate valve G of the load lock module LLM is opened, the transfer mechanism 15 extends and retracts the arm section 15a to transfer (transfer) the transfer object from the load lock module LLM to the vacuum transfer chamber 11 through the transfer port 11b. In addition, the transfer mechanism 15 extends and retracts the arm section 15a to transfer (transfer) the transfer object from the vacuum transfer chamber 11 to the load lock module LLM through the transfer port 11b.

[0050] In the vacuum transfer chamber 11, a suction mechanism 110 that sucks up deposits on the mounting table 31 in the processing vessel 30 is disposed adjacent to the transfer mechanism 15. In the example of FIG. 1, two suction mechanisms 110 are disposed. In the example of FIG. 3, one of the two suction mechanisms 110 is not illustrated. The number of suction mechanisms 110 is not limited to two, and may be two or more, or may be one. In addition, the suction mechanism 110 may be provided on rails (not shown) disposed on the bottom surface of the vacuum transfer chamber 11, and may be configured to be movable on the rails.

[0051] 4 is a diagram showing details of the suction mechanism 110 according to the embodiment. The suction mechanism 110 has a robot arm 111, and a suction port 112, a supply port 113, an irradiation unit 114, and an imaging unit 115 provided at the tip of the robot arm 111.

[0052] The robot arm 111 is composed of an arm section 121 in which a plurality of arm elements are rotatably connected by joints, a support section 122 that supports the arm section 121, and a head section 123 provided at the tip of the arm section 121. The support section 122 is configured to be movable in the horizontal direction and to be able to move up and down. The robot arm 111 can extend and retract the arm section 121 in the horizontal direction by bending the joint. The robot arm 111 can move the head section 123 at the tip of the arm section 121 in the vertical direction by raising and lowering the arm section 121 using the support section 122. When the gate valve G of the process module PM is opened, the robot arm 111 can extend the arm section 121 and move the head section 123 close to the mounting table 31 through the transfer port 11a. The operation of the robot arm 111 is generally controlled by the control section 10.

[0053] A suction port 112, a supply port 113, an irradiation unit 114, and an image capturing unit 115 are provided on the bottom surface of the head unit 123. The positions of the suction port 112, the supply port 113, the irradiation unit 114, and the image capturing unit 115 will be described later.

[0054] The suction port 112 sucks up the deposits on the mounting table 31 as the head unit 123 approaches the mounting table 31. That is, the suction port 112 is connected to the exhaust device 131 via an exhaust pipe 131A that passes through the robot arm 111, and the exhaust pipe 131A is provided with an openable and closable valve 131B. The suction port 112 sucks up the deposits on the mounting table 31 by the exhaust operation of the exhaust device 131 by opening the valve 131B.

[0055] The supply port 113 supplies an inert gas to the mounting table 31 as the head unit 123 approaches the mounting table 31. The gas supplied from the supply port 113 is an inert gas, a gas that reacts with the adhesion to facilitate the suction of the adhesion on the mounting table 31, or a gas that reacts with the adhesion to gasify the adhesion. For example, Ar, N2, dry air, or the like is used as the inert gas. When the inert gas is used, the gas flow rate is appropriately set so as to blow off the adhesion attached to the mounting table 31. For example, nitrogen trifluoride gas (NF3), fluorine gas (F2), or the like is used as the gas that reacts with the adhesion to facilitate the suction of the adhesion from the mounting table 31, or the gas that reacts with the adhesion to gasify the adhesion. The suction port 112 sucks the adhesion together with the gas supplied from the supply port 113. The supply port 113 is connected to a gas supply source (not shown) via a pipe passing through the robot arm 111 , and supplies gas from the gas supply source to the mounting table 31 .

[0056] The irradiation unit 114 irradiates the mounting table 31 with plasma by the head unit 123 approaching the mounting table 31, and removes the attachment from the mounting table 31. The irradiation unit 114 can reduce the adhesive force of the attachment or gasify the attachment by reacting the attachment with ions or radicals in the plasma. The attachment with reduced adhesive force or the gasified attachment is detached from the mounting table 31 and sucked through the suction port 112. The irradiation unit 114 irradiates the mounting table 31 with plasma obtained by applying high-frequency power to a gas such as O2, O2 / Ar, or a fluorine-containing gas (CF4, etc.). The irradiation unit 114 may irradiate the mounting table 31 with a laser, or may irradiate the mounting table 31 with both plasma and laser. The laser may be a laser that heats the attachment and reduces the adhesive force of the attachment. The laser may be a laser with a wavelength that gasifies the attachment. For example, a semiconductor laser may be used with a wavelength of 808 nm, a laser spot area of ​​0.5 to 3 mm, and a laser power of 200 W. The irradiating unit 114 may irradiate the mounting table 31 with a laser in an environment in which a gas (e.g., ozone gas) having a function of reducing the adhesive force of the attached matter or a function of gasifying the attached matter is present.

[0057] The imaging unit 115 is, for example, an image sensor, and captures an image of the mounting table 31 as the head unit 123 approaches the mounting table 31. The imaging unit 115 may capture an image of the mounting table 31 while irradiating it with light as necessary. The operation of the imaging unit 115 is generally controlled by the control unit 10. The imaging unit 115 outputs the captured image obtained by capturing an image of the mounting table 31 to the control unit 10. The control unit 10 detects the presence or absence of an attachment on the mounting table 31 from the captured image. If an attachment is detected from the captured image, the control unit 10 controls the valve 131B to start suction of the attachment from the suction port 112.

[0058] Further, exhaust pipe 131A is provided with measuring instrument 132. Measuring instrument 132 measures the diameter and number of particles flowing in exhaust pipe 131A, and outputs information on the number for each predetermined particle size range and information on the total number of particles to control unit 10. When suction is performed from suction port 112, control unit 10 monitors whether the number for each predetermined particle size range and the total number of particles obtained from measuring instrument 132 are equal to or less than a predetermined threshold. When the number for each predetermined particle size range and the total number of particles are equal to or less than a predetermined threshold, control unit 10 controls valve 131B to stop suction from suction port 112.

[0059] FIG. 5 is a diagram showing an example of the arrangement of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 according to the embodiment. FIG. 5 shows a view of the head unit 123 of the robot arm 111 seen from the bottom. The head unit 123 is formed in a rectangular shape in which a pair of short sides are arranged to sandwich the arm unit 121 in a plan view. The suction port 112 is provided along each short side at a position inside the pair of short sides of the head unit 123. The supply port 113 is provided at a position adjacent to one of the two suction ports 112, and the irradiation unit 114 is provided at a position adjacent to the other of the two suction ports 112. The imaging unit 115 is provided at the center of the lower surface of the head unit 123.

[0060] The positions of the suction port 112, the supply port 113, the irradiation unit 114, and the image capturing unit 115 shown in FIG. 5 are merely examples, and are not limited thereto. For example, the suction port 112 may be provided at a position inside a pair of short sides of the head unit 123, and at a position surrounding the outer periphery of each of the supply port 113 and the irradiation unit 114, as shown in FIG. 6. FIG. 6 is a diagram showing another example of the arrangement of the suction port 112, the supply port 113, the irradiation unit 114, and the image capturing unit 115 according to the embodiment. In addition, in FIG. 5 and FIG. 6, the image capturing unit 115 is provided on the lower surface of the head unit 123, which is the same as the suction port 112, the supply port 113, and the irradiation unit 114, but may be provided on the side surface of the head unit 123.

[0061] 5 shows an example in which the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 are arranged on the lower surface of the head unit 123, but the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 may be further arranged on another surface of the tip of the robot arm 111. For example, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 may be further arranged on the side surface or upper surface of the tip of the robot arm 111. This allows the inside of the processing container 30 to be cleaned over a wide area.

[0062] The head unit 123 may be configured to be rotatable in the vertical direction or the horizontal direction. For example, as shown in FIG. 7, the head unit 123 may be fixed to the tip of the arm unit 121 via a rotation shaft 123a so as to be rotatable in the vertical direction, and the orientation of the head unit 123 may be changed to change the orientations of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115. FIG. 7 is a diagram showing the configuration of the head unit 123 according to a modified example of the embodiment. FIG. 7 shows a state in which the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 are provided on the side surface of the head unit 123. For example, the robot arm 111 changes the orientations of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 to the upward direction by rotating the head unit 123 upward via the rotation shaft 123a from the state shown in FIG. 7. Also, for example, the robot arm 111 rotates the head unit 123 downward from the state shown in FIG. 7 via the rotation shaft 123a, thereby changing the orientation of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 downward. With this configuration, it is possible to clean all parts of the inside of the processing vessel 30, such as the upper part, the side part, and the lower part. Note that in FIG. 7, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 are arranged in the vertical direction on the side of the head unit 123, but this is not limited to this and various arrangements may be used. Also, cleaning may be performed not only in the processing vessel 30 but also in the load lock module LLM and the vacuum transfer chamber 11.

[0063] Next, a specific processing operation by the substrate processing system 1 will be described with reference to Fig. 8. Fig. 8 is a flow chart showing an example of the processing operation of the substrate processing system 1 according to the embodiment. The processing operation shown in Fig. 8 is mainly executed according to the control by the control unit 10.

[0064] First, in a state where the edge ring ER is placed on the mounting table 31, dry cleaning is performed on the processing vessel 30 (step S101).

[0065] When the dry cleaning is completed, the edge ring ER is carried out from the processing vessel 30 by the transfer mechanism 15 (step S102).

[0066] Next, the mounting table 31 in the processing vessel 30 is cleaned by the suction mechanism 110 (step S103).

[0067] After the cleaning is completed, a replacement edge ring ER is carried into the processing vessel 30 (step S104).

[0068] After that, the position of the edge ring ER is corrected (step S105).

[0069] Next, an example of an operation for unloading the edge ring ER from the processing vessel 30 and cleaning the mounting table 31 will be described with reference to Figs. 9A, 9B, and 10. Figs. 9A and 9B are diagrams for explaining an example of an operation for unloading the edge ring ER from the processing vessel 30 and cleaning the mounting table 31. Fig. 10 is a flowchart showing an example of a process for cleaning the mounting table 31. Note that Fig. 10 corresponds to the process of step S103 in Fig. 8.

[0070] When the edge ring ER is carried out from the processing vessel 30, the gate valve G of the process module PM is opened. This allows the vacuum transfer chamber 11 and the process module PM (processing vessel 30) to communicate with each other via the transfer port 11a and the gate 84. When the vacuum transfer chamber 11 and the processing vessel 30 communicate with each other, the second lifter pins protrude from the mounting table 31, and the edge ring ER is placed above the mounting table 31. The transfer mechanism 15 moves the fork portion 15b at the tip of the arm portion 15a to a height corresponding to the gate 84 by the support portion 15c. The transfer mechanism 15 extends the arm portion 15a toward the transfer port 11a side, and moves the fork portion 15b below the edge ring ER via the transfer port 11a. When the second lifter pins are lowered, the transfer mechanism 15 receives the edge ring ER supported on the second lifter pins with the fork portion 15b, as shown in FIG. 9A. The transfer mechanism 15 retracts the arm 15a while holding the edge ring ER, and transfers the edge ring ER out of the processing vessel 30.

[0071] Next, the transport mechanism 15 moves the fork portion 15b holding the edge ring ER to a height corresponding to the vacant lower support stand of the storage chamber ST. The transport mechanism 15 rotates the arm portion 15a toward the storage chamber ST to move the edge ring ER above the vacant lower support stand. The transport mechanism 15 lowers the arm portion 15a to store the edge ring ER on the vacant lower support stand.

[0072] Next, the robot arm 111 moves the head 123 at the tip of the arm 121 to a height corresponding to the gate 84 by the support 122. As shown in FIG. 9B, the robot arm 111 extends the arm 121 toward the transfer opening 11a and moves the head 123 closer to the mounting table 31 through the transfer opening 11a. As shown in FIG. 10, the imaging unit 115 images the mounting table 31 from above and outputs the obtained captured image to the control unit 10 (step S111). That is, the imaging unit 115 outputs the captured image obtained by capturing the mounting surface 36d, the outer circumferential surface 36e, the ER mounting surface 36f, etc. of the electrostatic chuck 36 to the control unit. The control unit 10 detects the presence or absence of adhesion on the mounting table 31 by comparing the captured image with a reference image obtained by capturing an image of the mounting table 31 that has been cleaned or is new (step S112). When an attachment is detected from the captured image (step S113: Yes), the control unit 10 moves the suction port 112 to the position of the attachment and controls the valve 131B to start suction by the suction port 112. As a result, the attachment on the mounting table 31 (i.e., the attachment remaining on the mounting surface 36d, the outer peripheral surface 36e, the ER mounting surface 36f, etc. of the electrostatic chuck 36) is sucked by the suction port 112 (step S114). For example, when dry cleaning is performed with the edge ring ER mounted on the mounting table 31, reaction products are not completely removed from the outer peripheral surface of the electrostatic chuck 36 and remain as attachment. In such a case, the control unit 10 sucks, for example, the attachment remaining on the outer peripheral surface of the electrostatic chuck 36 through the suction port 112.

[0073] The suction port 112 may suck the deposits on the mounting table 31 in a state where an inert gas is supplied from the shower head 46 into the processing vessel 30 so that the pressure inside the processing vessel 30 and the vacuum transfer chamber 11 is maintained. Examples of the inert gas include Ar, N2, and dry air. The source of the inert gas is not limited to the shower head 46, and may be, for example, a purge port (not shown) that supplies gas when the processing vessel 30 is opened to the atmosphere. The suction port 112 may suck the deposits on the mounting table 31 in a state where an inert gas is supplied from a gas supply unit of the vacuum transfer chamber 11 into the vacuum transfer chamber 11. The suction port 112 may suck the deposits on the mounting table 31 in a state where an inert gas is supplied into both the processing vessel 30 and the vacuum transfer chamber 11.

[0074] When suction is performed from suction port 112, control unit 10 monitors whether the number of particles for each predetermined particle size range and the total number of particles obtained from measuring instrument 132 are equal to or less than a predetermined threshold. When the number of particles is equal to or less than the predetermined threshold, control unit 10 controls valve 131B to stop suction from suction port 112.

[0075] When the suction from the suction port 112 is stopped, the image capturing unit 115 captures the mounting table 31 from above again and outputs the captured image to the control unit 10 (step S115). The control unit 10 detects the presence or absence of adhesion on the mounting table 31 by comparing the captured image with a reference image obtained by capturing an image of a cleaned or new mounting table 31 in advance (step S116). If adhesion is detected again from the captured image (step S117: Yes), the control unit 10 controls the valve 131B to start suction by the suction port 112. At this time, the supply port 113 supplies gas to the mounting table 31 (step S118). The suction port 112 sucks the adhesion together with the gas supplied from the supply port 113. If the number of particles for each predetermined particle size division and the total number of particles obtained from the measuring device 132 are equal to or less than a threshold value, the control unit 10 controls the valve 131B to stop suction from the suction port 112.

[0076] When the suction from the suction port 112 is stopped, the image capturing unit 115 captures the mounting table 31 from above again and outputs the captured image to the control unit 10 (step S119). The control unit 10 detects the presence or absence of adhesion on the mounting table 31 by comparing the captured image with a reference image obtained by capturing an image of a cleaned or new mounting table 31 in advance (step S120). If the control unit 10 detects adhesion again from the captured image (step S121: Yes), it controls the valve 131B to start suction by the suction port 112. At this time, the irradiation unit 114 irradiates the mounting table 31 with plasma, laser, or both plasma and laser to remove the adhesion from the mounting table 31 (step S122). The suction port 112 sucks the adhesion removed from the mounting table 31. Note that the control unit 10 may irradiate the mounting table 31 with either or both of plasma and laser by the irradiation unit 114, and then suck up the deposits through the suction port 112. When the number of particles obtained from the measuring instrument 132 is equal to or less than a threshold value, the control unit 10 controls the valve 131B to stop suction from the suction port 112.

[0077] When the suction from the suction port 112 is stopped, the image capturing unit 115 captures an image of the mounting table 31 from above again and outputs the captured image to the control unit (step S123). The control unit 10 detects the presence or absence of adhesion on the mounting table 31 by comparing the captured image with a reference image obtained by capturing an image of the cleaning or new mounting table 31 in advance (step S124). If adhesion is detected again from the captured image (step S125: Yes), the control unit 10 notifies an operator of the substrate processing system 1 of an alert (step S126). The operator who has received the alert opens the processing container 30 to the atmosphere and performs maintenance including cleaning of the mounting table 31.

[0078] Moreover, if no attached matter is detected from the captured image (step S113: No, step S117: No, step S121: No, step S125: No), the control unit 10 ends the process of cleaning the mounting table 31. In this manner, the mounting table 31 is cleaned.

[0079] When cleaning of the mounting table 31 is completed, the robot arm 111 retracts the arm portion 121 and returns the suction port 112 , the supply port 113 , the irradiation portion 114 and the imaging portion 115 to their original positions within the vacuum transfer chamber 11 .

[0080] Next, an example of an operation for carrying a replacement edge ring ER into the processing vessel 30 will be described with reference to Figs. 11A to 11D. Figs. 11A to 11D are views for explaining an example of an operation for carrying the edge ring ER into the processing vessel 30. Fig. 12 is a flowchart showing an example of a process for correcting the position of the edge ring ER after carrying it in. Note that Fig. 12 corresponds to the process of step S105 in Fig. 8.

[0081] When carrying a replacement edge ring ER into the processing vessel 30, the transport mechanism 15 moves the fork portion 15b to a height corresponding to the upper support table on which the replacement edge ring ER is placed in the storage chamber ST. The transport mechanism 15 rotates the arm portion 15a toward the replacement edge ring ER and holds the replacement edge ring ER with the fork portion 15b. The transport mechanism 15 rotates the arm portion 15a toward the gate 84 while holding the replacement edge ring ER.

[0082] Next, the transfer mechanism 15 moves the fork portion 15b to a height corresponding to the gate 84. As indicated by the dashed line in FIG. 11A, the transfer mechanism 15 extends the arm portion 15a toward the transfer opening 11a, and carries the replacement edge ring ER above the mounting table 31 through the transfer opening 11a and the gate 84.

[0083] When the fork portion 15b holding the replacement edge ring ER reaches above the mounting table 31, a second lifter pin (not shown) protrudes from the mounting table 31, and the replacement edge ring ER is transferred from the fork portion 15b to the second lifter pin. When the replacement edge ring ER is transferred from the fork portion 15b to the second lifter pin, the transfer mechanism 15 contracts the arm portion 15a and returns the fork portion 15b to its original position in the vacuum transfer chamber 11. The second lifter pin supporting the replacement edge ring ER descends, and the replacement edge ring ER is placed on the outer periphery of the mounting table 31.

[0084] 11B, the robot arm 111 moves the head unit 123 to a height corresponding to the gate 84. The robot arm 111 extends the arm unit 121 toward the transfer opening 11a and moves the head unit 123 closer to the mounting table 31 via the transfer opening 11a and the gate 84. As shown in FIG. 12, the imaging unit 115 images the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 at each of a plurality of positions in the circumferential direction (step S131). For example, the imaging unit 115 sequentially images the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 at a plurality of imaging positions set at equal intervals in the circumferential direction of the mounting table 31.

[0085] FIG. 13 is a diagram showing an example of an imaging position in the imaging unit 115. FIG. 13 corresponds to a top view of the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 seen from above. In FIG. 13, the mounting surface 36d of the mounting table 31 is shown in a disk shape, and the replacement edge ring ER is shown in a ring shape around the mounting surface 36d. Four imaging positions P in the imaging unit 115 are set at equal intervals at an angle of 90 degrees with respect to the circumferential direction of the mounting table 31. The imaging positions may be set to three or less, or may be set to five or more with respect to the circumferential direction of the mounting table 31. The imaging unit 115 may also capture an image of the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 all at once.

[0086] Returning to FIG. 11B, the imaging unit 115 outputs captured images obtained by capturing images of the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 at each of a plurality of positions in the circumferential direction to the control unit 10. As shown in FIG. 12, the control unit 10 compares the captured image with a correction reference image obtained by capturing an image of the edge ring ER in a state without any misalignment in advance (step S132), and calculates the amount of misalignment between the gap width and the reference width for each of the plurality of positions in the circumferential direction (step S133). The reference width is, for example, the gap width measured in advance when the center of the replacement edge ring ER and the center of the electrostatic chuck 36 are aligned.

[0087] Next, the control unit 10 judges whether the calculated deviation amount is within the allowable value (step S134). If the calculated deviation amount is outside the allowable value (step S134: No), the control unit 10 controls the transport mechanism 15 to correct the position of the replacement edge ring ER by the calculated deviation amount (step S135). That is, when the second lifter pins (not shown) protrude from the mounting table 31 and the replacement edge ring ER is placed above the mounting table 31, the transport mechanism 15 moves the fork portion 15b to a height corresponding to the gate 84. Then, the transport mechanism 140 extends the arm portion 15a toward the transport opening 11a and moves the fork portion 15b below the replacement edge ring ER through the transport opening 11a. When the second lifter pins descend, the transport mechanism 15 receives the replacement edge ring ER supported on the second lifter pins with the fork portion 15b as shown in FIG. 11C. The transport mechanism 15 moves the arm portion 15a in the horizontal direction while holding the replacement edge ring ER so that the calculated amount of deviation becomes zero. When the replacement edge ring ER moves and the amount of deviation becomes zero, the second lifter pins protrude from the mounting table 31, and the replacement edge ring ER is handed over from the fork portion 15b to the second lifter pins. When the replacement edge ring ER is handed over from the fork portion 15b to the second lifter pins, the transport mechanism 15 contracts the arm portion 15a, and returns the fork portion 15b to its original position in the vacuum transport chamber 11. The second lifter pins supporting the replacement edge ring ER are lowered, and the replacement edge ring ER is placed on the outer periphery of the mounting table 31. After correcting the amount of misalignment, the control unit 10 may return the process to step S131 and image the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 using the imaging unit 115 to confirm that the amount of misalignment is within the tolerance (steps S131 to S134). If the amount of misalignment is outside the tolerance, the control unit 10 may again perform correction as described above so that the amount of misalignment of the replacement edge ring ER becomes zero (step S135).

[0088] On the other hand, if the calculated amount of deviation is within the allowable value (step S134: Yes), the control unit 10 ends the process, thereby completing the loading of the replacement edge ring ER into the processing vessel 30.

[0089] When the edge ring ER is completely carried into the processing vessel 30, the robot arm 111 moves the head unit 123 at the tip of the arm unit 121 to a height corresponding to the gate 84 by the support unit 122. As shown in FIG. 11D , the robot arm 111 extends the arm unit 121 toward the transfer opening 11a and moves the head unit 123 closer to the gate 84 through the transfer opening 11a. Thereafter, the robot arm 111, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 operate in the same order as when cleaning the mounting table 31 to clean the gate 84.

[0090] The above describes the operations performed when a replacement edge ring ER is transported into the processing vessel 30. However, the same operations are also performed when an edge ring ER that has been temporarily removed from the process module PM and stored on the support stand in the storage chamber ST is transported back into the processing vessel 30, not just a replacement edge ring ER.

[0091] (Modification) In the above embodiment, the case where the mounting table 31 is cleaned as the object in the processing vessel 30 has been described. However, the substrate processing system 1 may clean an object in the load lock module LLM. The object in the load lock module LLM may be, for example, a table on which a wafer W is placed. FIG. 14 is a diagram showing an example of an operation for cleaning a table in the load lock module LLM. The load lock module LLM has an opening 151a communicating with the vacuum transfer chamber 11 and an opening 151b communicating with the normal pressure transfer chamber 12. A gate valve G is attached to each of the opening 151a communicating with the vacuum transfer chamber 11 and the opening 151b communicating with the normal pressure transfer chamber 12. A table 150 on which a wafer W is placed is provided in the load lock module LLM. When cleaning the table 150 in the load lock module LLM, both the gate valve G on the vacuum transfer chamber 11 side and the gate valve G on the normal pressure transfer chamber 12 side are closed, and the load lock module LLM is evacuated to a vacuum. When the load lock module LLM is at a predetermined vacuum level, in other words, when the atmosphere of the load lock module LLM is switched to a vacuum atmosphere, the gate valve G on the vacuum transfer chamber 11 side is opened. As shown in FIG. 14, the transfer port 11b of the vacuum transfer chamber 11 is connected to the load lock module LLM by opening the gate valve G on the vacuum transfer chamber 11 side. The suction mechanism 110 sucks up the deposits on the stage 150 in the load lock module LLM through the transfer port 11b. That is, the robot arm 111, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 of the suction mechanism 110 operate in the same order as when cleaning the mounting stage 31 to clean the stage 150 in the load lock module LLM.

[0092] The substrate processing system 1 may also clean the bottom surface of the vacuum transfer chamber 11. FIG. 15 is a diagram showing an example of an operation for cleaning the bottom surface 11c of the vacuum transfer chamber 11. The vacuum transfer chamber 11 has a recessed portion 11d recessed from the bottom surface 11c of the vacuum transfer chamber 11. The suction mechanism 110 is disposed in the recessed portion 11d and sucks up the deposits on the bottom surface 11c of the vacuum transfer chamber 11. That is, the robot arm 111 of the suction mechanism 110 moves the head portion 123 to a height corresponding to the bottom surface 11c of the vacuum transfer chamber 11, as shown in FIG. 15. Thereafter, the robot arm 111, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 operate in the same order as when cleaning the mounting table 31 to clean the bottom surface 11c of the vacuum transfer chamber 11.

[0093] Thus, the substrate processing system (e.g., substrate processing system 1) according to the embodiment includes a substrate processing apparatus (e.g., process module PM), a vacuum transfer chamber (e.g., vacuum transfer chamber 11), a transfer mechanism (e.g., transfer mechanism 15), a suction mechanism (e.g., suction mechanism 110), and a controller (e.g., controller 10). The substrate processing apparatus includes a vacuum processing chamber (e.g., processing vessel 30) in which a vacuum process is performed on a substrate (e.g., wafer W). The vacuum transfer chamber includes a transfer port (e.g., transfer port 11a) that is connected to the vacuum processing chamber and can communicate with the vacuum processing chamber. The transfer mechanism is disposed in the vacuum transfer chamber and transfers the substrate through the transfer port. The suction mechanism is disposed in the vacuum transfer chamber and sucks up deposits on components (e.g., mounting table 31) in the vacuum processing chamber through the transfer port. The controller controls the transfer mechanism and the suction mechanism. This allows the substrate processing system to clean the inside of the vacuum transfer chamber with high efficiency without opening to the atmosphere.

[0094] The control unit also controls the suction mechanism to enter the vacuum processing chamber through the transfer port and suck up the deposits on the components in the vacuum processing chamber by the suction mechanism, thereby enabling the substrate processing system to clean the inside of the vacuum transfer chamber with high efficiency without exposing the inside of the vacuum transfer chamber to the atmosphere.

[0095] The suction mechanism also has an arm (e.g., robot arm 111) and a suction port (e.g., suction port 112) provided at the tip of the arm. The control unit controls the suction port provided at the tip of the arm to enter the vacuum processing chamber via the transfer port and suck up any attachments on the components in the vacuum processing chamber through the suction port. This allows the attachments to be sucked up by the suction port near the target object in the vacuum processing chamber.

[0096] Furthermore, the control unit controls the supply of an inert gas to one or both of the vacuum processing chamber and the vacuum transfer chamber when sucking the adhering matter, thereby making it possible to suck the adhering matter together with the inert gas through the suction port.

[0097] The suction mechanism further has a supply port (for example, supply port 113) provided at the tip of the arm. The supply port supplies gas toward the component in the vacuum processing chamber. This allows the inert gas to blow off any attached matter from the target object in the vacuum processing chamber, while the suction port sucks in the attached matter together with the inert gas.

[0098] The suction mechanism further includes an irradiation unit (e.g., irradiation unit 114) provided at the tip of the arm. The irradiation unit irradiates one or both of plasma and laser toward the component in the vacuum processing chamber. This allows the attachment removed from the target object in the vacuum processing chamber to be sucked by the suction port.

[0099] The suction mechanism further includes an imaging unit (e.g., imaging unit 115) provided at the tip of the arm. The imaging unit captures images of the components in the vacuum processing chamber. This makes it possible to obtain captured images that are used to detect the presence or absence of adhesion.

[0100] The substrate processing system further includes a valve (e.g., valve 131B) provided in an exhaust pipe (e.g., exhaust pipe 131A) connecting the suction port and an exhaust device (e.g., exhaust device 131), and a measuring device (e.g., measuring device 132) that measures the number of particles flowing through the exhaust pipe. When the number of particles measured by the measuring device is equal to or less than a predetermined threshold, the control unit controls the valve to stop suction from the suction port. This makes it possible to stop suction from the suction port at an appropriate timing.

[0101] The component is a mounting table (e.g., mounting table 31) having a first mounting portion (e.g., electrostatic chuck 36) on which a substrate is mounted, and a second mounting portion (e.g., outer periphery) that is annularly provided in an outer recess of the first mounting portion and on which an edge ring (e.g., edge ring ER) is mounted. The control unit controls the sucking of the attachments on the first mounting portion of the mounting table when the substrate is carried out by the transport mechanism. This makes it possible to clean the mounting portion of the mounting table that is exposed when the substrate is carried out.

[0102] In addition, the control unit controls the transport mechanism to suck up at least the deposits on the second mounting portion of the mounting table when the edge ring is carried out by the transport mechanism, thereby cleaning the outer circumferential surface of the mounting portion of the mounting table that is exposed when the edge ring is carried out.

[0103] Furthermore, after the transport mechanism transports the edge ring into the vacuum processing chamber through the transport port and places it on the second placement portion of the placement stage, the control unit causes an imaging unit (e.g., imaging unit 115) provided at the tip of the arm to capture images of the gap between the edge ring and the first placement portion of the placement stage at each of a plurality of positions in the circumferential direction, thereby making it possible to obtain captured images for correcting the position of the replacement edge ring placed on the second placement portion of the placement stage.

[0104] The control unit 10 also calculates the amount of deviation between the gap width and the reference width for each of a plurality of positions in the circumferential direction based on the captured images, and controls the transport mechanism based on the amount of deviation, thereby correcting the position of the replacement edge ring.

[0105] The substrate processing system further includes a load lock chamber (e.g., a load lock module LLM) connected to the vacuum transfer chamber and switching the atmosphere between a vacuum atmosphere and a normal pressure atmosphere. The vacuum transfer chamber has a transfer port (e.g., transfer port 11b) that can communicate with the load lock chamber. The control unit controls the suction mechanism to enter the load lock chamber through the transfer port while the atmosphere in the load lock chamber has been switched to a vacuum atmosphere, and to suck up any deposits on at least a platform on which a substrate is placed inside the load lock chamber. This allows the substrate processing system to clean the inside of the load lock chamber with high efficiency without opening it to the atmosphere.

[0106] The vacuum transfer chamber has a recess (e.g., recess 11d) recessed from the bottom surface (e.g., bottom surface 11c) of the vacuum transfer chamber, the suction mechanism is disposed in the recess, and the control unit sucks up deposits on the bottom surface of the vacuum transfer chamber. This allows the substrate processing system to clean the bottom surface of the vacuum transfer chamber with high efficiency without being exposed to the atmosphere.

[0107] (others) In the above embodiment, the case where the mounting table 31 is cleaned as the object in the processing vessel 30 has been described as an example, but the disclosed technology is not limited thereto. The substrate processing system 1 may clean a component other than the mounting table 31 as long as the component is located in the processing vessel 30. The control unit 10 may compare an image obtained by imaging the component in the processing vessel 30 by the imaging unit 115 with an image obtained by imaging a new component, and determine an abnormality of the component in the processing vessel 30 based on at least one of the surface condition, the shape, and the size. The control unit 10 may output a component replacement instruction when it is determined that an abnormality has occurred in the component in the processing vessel 30.

[0108] In the above embodiment, the edge ring ER is replaced as a consumable part, but the disclosed technology is not limited to this. The consumable part to be replaced may be the edge ring ER, a cover ring (not shown) disposed on the outer periphery of the edge ring ER, or any part that can be carried into and out of the processing vessel 30 by a transport mechanism such as a robot arm.

[0109] In the above embodiment, the imaging unit 115 may be configured to acquire a stereoscopic image. For example, a 3D scanner may be used as the imaging unit 115. The imaging unit 115 may detect an attached object by comparing the acquired stereoscopic image with a reference image.

[0110] In addition, in the above embodiment, the suction port 112 and the supply port 113 may be provided on the underside of the head portion 123 so that the direction in which the gas supplied from the supply port 113 is reflected on the mounting table 31 coincides with the direction in which the suction port 112 sucks in the adhesions.

[0111] In the above embodiment, dry ice may be supplied instead of or together with the gas through the supply port 113. In this case, any deposits on the mounting table 31 are removed by collision with the dry ice and are sucked by the suction port 112.

[0112] In the above embodiment, the supply port 113 may supply a chemical liquid instead of or together with the gas. In such a case, the deposits on the mounting table 31 are dissolved by the chemical liquid and are sucked together with the chemical liquid by the suction port 112. As the chemical liquid, for example, alcohol may be used.

[0113] In the above embodiment, the suction port 112 , the supply port 113 , the irradiation unit 114 and the image capturing unit 115 may be configured to be detachable from the lower surface of the head unit 123 .

[0114] In the above embodiment, the positions of the suction port 112, the supply port 113, the irradiation unit 114, and the image capturing unit 115 may be interchangeable.

[0115] In the above embodiment, when the vacuum transfer chamber 11 and the processing vessel 30 are communicated with each other to perform cleaning, the pressure in the vacuum transfer chamber 11 and the pressure in the processing vessel 30 may be adjusted so that the processing gas in the processing vessel 30 does not leak to the vacuum transfer chamber 11. For example, the pressure in the vacuum transfer chamber 11 may be made higher than the pressure in the processing vessel 30.

[0116] In the above embodiment, a self-propelled cleaning robot may be provided in the vacuum transfer chamber 11. The self-propelled cleaning robot may clean the inside of the vacuum transfer chamber 11, or may advance an arm equipped with a cleaning device from a self-propelled main body into the processing vessel 30, and clean the inside of the processing vessel 30 using the cleaning device.

[0117] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0118] 1. Substrate Processing System 10 Control section 11 Vacuum transfer chamber 11a, 11b Transport port 11c Bottom 11d Depression 15 Transport mechanism 30 Processing vessel 31 Placement table 36 Electrostatic Chuck 84 Gate 110 Suction mechanism 111 Robot Arm 112 Suction port 113 Supply Inlet 114 Irradiation unit 115 Imaging unit 131 Exhaust system 131A Exhaust pipe 132 Measuring Instruments ER Edge Ring LLM Load Lock Module PM Process Module W wafer

Claims

1. a substrate processing apparatus having a vacuum processing chamber in which processing is performed on a substrate; a vacuum transfer chamber connected to the vacuum processing chamber and having a transfer port capable of communicating with the vacuum processing chamber; a transfer mechanism disposed in the vacuum transfer chamber and configured to transfer at least a substrate through the transfer port; a suction mechanism that is disposed in the vacuum transfer chamber and that sucks up adhesions of components in the vacuum processing chamber through the transfer port; A control unit that controls the transport mechanism and the suction mechanism; A substrate processing system comprising:

2. 2. The substrate processing system according to claim 1, wherein the control unit controls the suction mechanism to enter the vacuum processing chamber through the transfer port and to suck up adhesions on components in the vacuum processing chamber using the suction mechanism.

3. The suction mechanism includes: An arm, A suction port provided at a tip of the arm; having 3. The substrate processing system of claim 1, wherein the control unit controls the suction port provided at the tip of the arm to enter the vacuum processing chamber through the transport port and suck up any adhering material on components in the vacuum processing chamber through the suction port.

4. The substrate processing system according to claim 3 , wherein the control unit performs control so as to supply an inert gas to one or both of the vacuum processing chamber and the vacuum transfer chamber when the deposit is sucked.

5. The suction mechanism includes: The apparatus further includes a supply port provided at a tip of the arm, 4. The substrate processing system according to claim 3, wherein the control unit controls a gas supply from the supply port toward the component in the vacuum processing chamber when deposits on the component in the vacuum processing chamber are sucked through the suction port.

6. The suction mechanism includes: The arm further includes an irradiation unit provided at a tip thereof, 4. The substrate processing system of claim 3, wherein the control unit controls the irradiation unit to irradiate one or both of plasma and laser toward the components in the vacuum processing chamber when adhering matter on the components in the vacuum processing chamber is sucked through the suction port.

7. The suction mechanism includes: The imaging unit is further provided at the tip of the arm, 4. The substrate processing system according to claim 3, wherein the control unit controls the imaging unit to capture an image of the component in the vacuum processing chamber, and controls the imaging unit to suck adhesions on the component through the suction port based on the image capture result.

8. a valve provided in an exhaust pipe connecting the suction port and an exhaust device; A measuring instrument for measuring the number of particles flowing in the exhaust pipe; and The substrate processing system according to claim 3 , wherein the control unit controls the valve to stop suction from the suction port when the number of particles measured by the measuring device is equal to or smaller than a predetermined threshold value.

9. the component is a mounting table having a first mounting portion on which a substrate is mounted, and a second mounting portion provided in an annular shape in an outer recess of the first mounting portion, the second mounting portion on which an edge ring is mounted, 4 . The substrate processing system according to claim 3 , wherein the control unit controls so as to suck adherent matter on a first placement part of the placement table when the substrate has been carried out by the transport mechanism.

10. 10 . The substrate processing system according to claim 9 , wherein the control unit performs control so as to suck at least adherent matter on a second placement part of the placement table when the edge ring has been carried out by the transport mechanism.

11. The substrate processing system of claim 10, wherein the control unit controls the transport mechanism to transport an edge ring into the vacuum processing chamber through the transport port and place it on a second mounting portion of the mounting table, and then controls an imaging unit provided at the tip of the arm to image the gap between the edge ring and the first mounting portion of the mounting table at each of a plurality of circumferential positions.

12. The substrate processing system of claim 11, wherein the control unit calculates a deviation amount between the width of the gap and a reference width for each of a plurality of circumferential positions based on an image obtained by capturing an image, and controls the transport mechanism based on the deviation amount.

13. A load lock chamber is connected to the vacuum transfer chamber and switches between a vacuum atmosphere and a normal pressure atmosphere. the vacuum transfer chamber has a transfer port that can communicate with the load lock chamber, 2. The substrate processing system according to claim 1, wherein the control unit controls the suction mechanism to enter the load lock chamber through the transfer port while the atmosphere in the load lock chamber is switched to a vacuum atmosphere, and to suck up any adhering matter on at least a platform on which a substrate is placed in the load lock chamber.

14. the vacuum transfer chamber has a recessed portion recessed from a bottom surface of the vacuum transfer chamber, The suction mechanism is disposed in the recess, The substrate processing system according to claim 1 , wherein the control unit performs control so as to suction any deposits on a bottom surface of the vacuum transfer chamber.

15. a substrate processing apparatus having a vacuum processing chamber in which processing is performed on a substrate; a vacuum transfer chamber connected to the vacuum processing chamber and having a transfer port capable of communicating with the vacuum processing chamber; a transfer mechanism that is disposed in the vacuum transfer chamber and transfers a substrate into and out of the vacuum transfer chamber via the transfer port; a suction mechanism that is disposed in the vacuum transfer chamber and sucks up adhesions of components in the vacuum processing chamber through the transfer port; A maintenance method for a substrate processing system comprising: inserting the suction mechanism into the vacuum processing chamber through the transfer port; sucking up any adhering matter on the components in the vacuum processing chamber by the suction mechanism; (c) a maintenance method;

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