Buffer chamber, substrate processing apparatus and substrate processing method

Abstract

To provide a device that processes a substrate.SOLUTION: A substrate processing device includes a batch processing tank that processes a substrate in a batch manner, a single wafer processing chamber that processes the substrate in a single wafer manner, and a buffer chamber that is disposed on a return path for the substrates returned between the batch processing tank and the single wafer processing chamber, and supplies a liquid to maintain the substrates in a wet state.SELECTED DRAWING: Figure 17

Description

[Technical field]

[0001] The present invention relates to a buffer chamber, a substrate processing apparatus, and a substrate processing method. [Background technology]

[0002] In order to manufacture semiconductor devices, desired patterns are formed on a substrate such as a wafer through various processes such as photography, etching, ashing, ion implantation, and thin film deposition. Various process liquids and process gases are used in each process, and particles and process by-products are generated during the process. In order to remove the thin films, particles, and process by-products from the substrate, a liquid treatment process is performed on the substrate before and after each process. In a typical liquid treatment process, the substrate is treated with chemicals and rinsing liquids, and then dried. The liquid treatment process can strip the SiN on the substrate.

[0003] Methods of treating substrates with treatment liquids such as chemicals and / or rinsing liquids can be divided into batch treatment methods in which multiple substrates are treated together in a vertical position, and single-wafer treatment methods in which horizontally oriented substrates are treated one by one.

[0004] In the batch processing method, which processes a plurality of substrates at once, the substrates are immersed vertically in a processing bath in which a chemical or rinsing solution flows underneath, and the substrates are processed. This allows for excellent mass productivity in substrate processing, and the processing quality between each substrate is uniform. However, in the batch processing method, since the substrates are immersed vertically, if the pattern formed on the substrate has a high aspect ratio, a pattern leaning phenomenon may occur in the pattern formed on the substrate during the process of lifting the substrate from the processing bath. In addition, if the substrates are exposed to the air at the same time and a drying process is not performed within a short time, water marks may occur in some of the substrates exposed to the air.

[0005] On the other hand, in the case of a single-wafer processing method in which substrates are processed one by one, chemical or rinse liquid is supplied to a single substrate rotating in a horizontal position to perform substrate processing. In addition, in the single-wafer processing method, the returned substrate maintains a horizontal position, so there is little risk of the above-mentioned pattern rinsing phenomenon occurring, and the substrate is processed one by one and then immediately dried or liquid processed, so there is little risk of the above-mentioned watermark occurring. However, in the case of the single-wafer processing method, the mass productivity of substrate processing is reduced, and the processing quality between each substrate is relatively uneven compared to the batch processing method. In addition, when the substrate is rotated and spin-dried, if the pattern formed on the substrate has a high aspect ratio, there is a risk of the rinsing phenomenon occurring, in which the pattern formed on the substrate collapses. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent Publication No. 10-2016-0147162 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a buffer chamber, a substrate processing apparatus, and a substrate processing method that can efficiently process substrates.

[0008] Another object of the present invention is to provide a buffer chamber, a substrate processing apparatus, and a substrate processing method that can improve mass productivity of substrate processing.

[0009] Another object of the present invention is to provide a buffer chamber, a substrate processing apparatus, and a substrate processing method that can further improve the uniformity of processing quality between substrates.

[0010] Another object of the present invention is to provide a substrate processing apparatus and method capable of minimizing the occurrence of a lining phenomenon in a pattern formed on a substrate.

[0011] Another object of the present invention is to provide a buffer chamber, a substrate processing apparatus, and a substrate processing method capable of efficiently processing a substrate on which a pattern having a high aspect ratio is formed.

[0012] Another object of the present invention is to provide a buffer chamber, a substrate processing apparatus, and a substrate processing method that can minimize drying of a patterned top surface of a substrate when the substrate is returned to a single wafer processing chamber after being processed in a batch manner.

[0013] Another object of the present invention is to provide a buffer chamber, a substrate processing apparatus, and a substrate processing method that can minimize contamination of a hand that returns substrates in the process of returning substrates processed in a batch manner to single wafer processing.

[0014] Another object of the present invention is to provide a buffer chamber, a substrate processing apparatus, and a substrate processing method that form a liquid film of a wetting liquid on substrates to prevent the upper surfaces of substrates processed in a batch manner from drying naturally, while cleaning the lower surfaces of the substrates, thereby minimizing contamination of the hands of a return robot that returns the substrates in the process of returning the substrates processed in a batch manner to a chamber that performs single-wafer processing.

[0015] The object of the present invention is not limited thereto, and other objects not mentioned herein will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0016] The present invention provides an apparatus for processing a substrate, the substrate processing apparatus including a batch processing tank for processing substrates in a batch manner, a single wafer processing chamber for processing the substrates in a single wafer manner, and a buffer chamber arranged on a return path of the substrate returned between the batch processing tank and the single wafer processing chamber and supplying a liquid so that the substrate is maintained in a wetting state.

[0017] According to an embodiment, the buffer chamber may include: a chuck for supporting and rotating the substrate; and a liquid supplier for supplying the liquid to the substrate supported and rotated by the chuck.

[0018] According to one embodiment, the liquid supply unit may include: a first liquid supply unit configured to supply a first liquid to an upper surface of the substrate supported by the chuck; and a second liquid supply unit configured to supply a second liquid to a lower surface of the substrate supported by the chuck.

[0019] According to an embodiment, the second liquid supply unit may be configured to supply the second liquid, which is a type of liquid having a higher volatility than the first liquid supplied by the first liquid supply unit.

[0020] According to one embodiment, the second liquid supply unit may be configured to supply the second liquid, which is isopropyl alcohol (IPA).

[0021] According to one embodiment, the first liquid supply unit may be configured to supply the first liquid which is water.

[0022] According to one embodiment, the apparatus further includes: a controller configured to control the buffer chamber, and the controller may control the buffer chamber such that the rotation speed of the chuck is between 300 RPM and 500 RPM while the liquid supply unit supplies the liquid.

[0023] According to one embodiment, the apparatus further includes: a controller configured to control the buffer chamber and the single wafer processing chamber, the controller being capable of controlling the buffer chamber and the single wafer processing chamber such that a processing time of the substrate in the buffer chamber is shorter than a processing time of the substrate in the single wafer processing chamber.

[0024] According to one embodiment, the apparatus further includes a position-changing processing tank disposed between the batch processing tank and the buffer chamber, and the liquid flowing through the position-changing processing tank may be the same type of liquid as the liquid supplied by the liquid supply unit.

[0025] According to one embodiment, the single wafer processing chamber includes: a single wafer liquid processing chamber for supplying a processing liquid to the substrate to process the substrate; and a single wafer drying chamber for drying the substrate, and the apparatus may further include: a return robot for returning the substrate between the single wafer liquid processing chamber, the single wafer drying chamber, and the buffer chamber.

[0026] According to one embodiment, the return robot may include a first hand, a second hand installed at a lower height than the first hand, and a third hand installed at a lower height than the second hand.

[0027] According to one embodiment, the apparatus further includes a controller configured to control the return robot, wherein the controller can control the return robot to use the first hand when returning the substrate that has been dried in the single-wafer drying chamber, to use the third hand when returning the substrate that has been wetted in the buffer chamber, and to use the second hand when returning the substrate from the single-wafer liquid processing chamber to the single-wafer drying chamber.

[0028] According to one embodiment, the device further includes a controller configured to control the buffer chamber, and the controller can control the buffer chamber so that the first liquid supply unit starts supplying the first liquid and the second liquid supply unit starts supplying the second liquid after a set time has elapsed.

[0029] The present invention also provides a buffer chamber, which may include a chuck for supporting and rotating a substrate, a first liquid supplying part configured to supply a first liquid to a first side of the substrate supported by the chuck, and a second liquid supplying part configured to supply a second liquid having a higher volatility than the first liquid to a second side of the substrate supported by the chuck, the second side being a side different from the first side.

[0030] According to one embodiment, the chuck can be controlled by a control unit to rotate at a speed between 300 RPM and 500 RPM.

[0031] According to one embodiment, the chamber includes: a processing cup for collecting the first liquid and the second liquid; and an elevator driver for raising and lowering the processing cup, the processing cup being composed of a plurality of cups and defining at least two or more collection paths for collecting different types of liquid, and the elevator driver is configured to raise and lower the processing cup so as to collect the first liquid through one of the collection paths and the second liquid through another of the collection paths.

[0032] The present invention also provides an apparatus for processing a substrate, the substrate processing apparatus including a first process processor for processing substrates in a batch manner, a second process processor for processing the substrates in a single wafer manner, and a controller, the first process processor including a batch processing tank for processing the substrates in a vertical position, the second process processor including a single wafer liquid processing chamber for supplying a processing liquid to the substrates being rotated to perform liquid processing on the substrates, a single wafer drying chamber for supplying a supercritical fluid to the substrates to perform a drying process on the substrates, a buffer chamber for supplying a liquid to the substrates so as to maintain a wetting state of the substrates, and a return robot for returning the substrates between the buffer chamber, the single wafer liquid processing chamber, and the single wafer drying chamber.

[0033] According to one embodiment, the first process processing unit further includes a posture change processing tank for changing the substrate from a vertical posture to a horizontal posture - the posture change processing tank has an accommodation space for containing a liquid, and a support member for supporting the substrate in a vertical posture is disposed in the accommodation space - and a posture change robot for changing the posture of the substrate from the vertical posture to a horizontal posture - the posture change robot has a hand and an arm for moving the hand - and the buffer chamber can be disposed at a position where the posture change robot can receive the substrate removed from the posture change processing tank.

[0034] According to one embodiment, the buffer chamber may include: a chuck for supporting and rotating the substrate; a first liquid supplying part configured to supply a first liquid to an upper surface of the substrate supported by the chuck; and a second liquid supplying part configured to supply a second liquid, which is more volatile than the first liquid, to a lower surface of the substrate supported by the chuck.

[0035] According to one embodiment, the apparatus includes: a plurality of the single wafer liquid processing chambers, the plurality of the single wafer liquid processing chambers being stacked on top of each other; and the buffer chamber may be installed at a higher position than the single wafer liquid processing chamber that is installed at the bottom among the plurality of the single wafer liquid processing chambers and at a lower position than the single wafer liquid processing chamber that is installed at the top among the plurality of the single wafer liquid processing chambers.

[0036] The present invention also provides a substrate processing method, the method including a batch processing step of performing a liquid processing on a plurality of substrates in a vertical position, a position changing step of changing a position of the substrates after the batch processing step from the vertical position to a horizontal position, a wetting step of supplying a wetting liquid to the substrates whose position has been changed to maintain a wetting state of the substrates, and a single-wafer processing step of performing the wetting step and processing on a single substrate in a horizontal position.

[0037] According to an embodiment, the wetting step may be performed by supplying the wetting liquid to the substrate supported and rotated by a chuck, the substrate being supported and rotated by the chuck.

[0038] According to an embodiment, the wetting step may be performed by supplying the wetting liquid to an upper surface of the substrate and supplying a cleaning liquid, which is a different type from the wetting liquid, to a lower surface of the substrate.

[0039] According to one embodiment, the cleaning liquid may be a liquid that is of a more volatile type than the wetting liquid.

[0040] According to one embodiment, the wetting liquid may be a water-containing liquid and the cleaning liquid may be an isopropyl alcohol (IPA)-containing liquid.

[0041] According to an embodiment, the supply of the cleaning liquid may be performed after a set time has elapsed since the supply of the wetting liquid was started.

[0042] According to one embodiment, the method further includes a returning step of returning the substrate on which the wetting step has been performed to a single wafer processing chamber in which a single wafer processing step is performed, and the returning step may be performed by returning the substrate to the single wafer processing chamber by a lowermost hand among the plurality of hands.

[0043] According to one embodiment, the time period during which the wetting step is performed may be shorter than the time period during which the single wafer processing step is performed.

[0044] The present invention also provides a method for processing a substrate, which may include supplying a first liquid to a first side of the substrate in a first chamber, supplying a second liquid having a higher volatility than the first liquid to a second side of the substrate to process the substrate, transporting the substrate from the first chamber while the second side of the substrate is supported by a hand of a returning robot, and transporting the substrate transported from the first chamber into a second chamber different from the first chamber.

[0045] According to an embodiment, the substrate may be rotated while the first liquid and the second liquid are supplied to the first surface.

[0046] According to an embodiment, when the returning robot returns the substrate, a liquid film of the first liquid may be formed on the first surface.

[0047] According to an embodiment, the first liquid may be a wetting liquid for wetting the upper surface of the substrate, and the second liquid may be an organic solvent for cleaning the lower surface of the substrate.

[0048] According to one embodiment, the first liquid may be deionized water and the second liquid may be isopropyl alcohol (IPA).

[0049] According to an embodiment, the first chamber may be a buffer chamber in which the substrate is temporarily stored, and the second chamber may be a single-wafer processing chamber in which the substrate is processed single-wafer.

[0050] According to an embodiment, the second chamber may be a single-wafer liquid processing chamber that processes the substrate by supplying an organic solvent to the first surface of the substrate.

[0051] According to an embodiment, the second chamber may be a single-wafer drying chamber that delivers a processing fluid in a supercritical state to the substrate to dry the substrate.

[0052] According to one embodiment, the substrate may be processed in a batch processing bath before being transferred into the first chamber.

[0053] According to an embodiment, after the substrate is processed in the batch-type processing bath, the substrate may be transferred into the first chamber with its orientation changed from a vertical orientation to a horizontal orientation.

[0054] According to an embodiment, the position change of the substrate may be performed while the substrate is immersed in a position change processing bath filled with the same type of liquid as the first liquid. Effect of the Invention

[0055] According to an embodiment of the present invention, substrates can be processed efficiently.

[0056] Moreover, according to an embodiment of the present invention, mass productivity of substrate processing can be improved.

[0057] Moreover, according to an embodiment of the present invention, the uniformity of the processing quality between substrates can be further improved.

[0058] Furthermore, according to an embodiment of the present invention, the risk of watermarks being generated on a substrate can be minimized.

[0059] Furthermore, according to an embodiment of the present invention, it is possible to minimize the occurrence of a lining phenomenon in a pattern formed on a substrate.

[0060] Furthermore, according to an embodiment of the present invention, a substrate on which a pattern having a high aspect ratio is formed can be efficiently processed.

[0061] In addition, according to an embodiment of the present invention, drying of the patterned top surface of the substrate can be minimized in the process of returning the substrate processed in a batch manner to the single wafer processing chamber.

[0062] Furthermore, according to an embodiment of the present invention, contamination of a hand returning a substrate during the process in which a substrate processed in a batch manner is returned to a single substrate processing apparatus can be minimized.

[0063] In addition, according to one embodiment of the present invention, a liquid film of a wetting liquid is formed on the substrate to prevent the upper surface of the substrate processed in a batch manner from drying naturally, and the lower surface of the substrate is cleaned to minimize contamination of the hands of a return robot that returns the substrate in the process of returning the substrate processed in a batch manner to a chamber that performs single-wafer processing.

[0064] The effects of the present invention are not limited to those described above, and effects not mentioned will be clearly understood by those having ordinary skill in the art to which the present invention pertains from this specification and the accompanying drawings. [Brief description of the drawings]

[0065] [Figure 1] 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention, viewed from above; [Diagram 2] 2 is a view showing one of the batch treatment vessels of FIG. 1. [Diagram 3] 2 is a drawing showing the appearance of the attitude-changing treatment tank of FIG. 1. [Figure 4] 2 is a diagram showing a schematic view of the posture-changing robot of FIG. 1. [Diagram 5] 5 is a drawing showing the hand of FIG. 4. [Figure 6] 2 is a diagram showing a schematic arrangement of a single-wafer liquid processing chamber and a buffer chamber in FIG. 1. [Figure 7] 7 is a schematic diagram of the buffer chamber of FIG. 6. [Figure 8] 2 is a diagram illustrating a first returning robot of FIG. 1. [Figure 9] 2 is a diagram showing a schematic view of the single-wafer liquid processing chamber of FIG. 1. [Figure 10] 2 is a diagram showing a schematic view of the single-wafer drying chamber of FIG. 1; [Figure 11] 2 is a flow chart illustrating a method for processing a substrate according to one embodiment of the present invention. [Figure 12] 12 is a diagram showing the posture change robot changing the posture of the substrate from a vertical posture to a horizontal posture in the second posture change step of FIG. 11 . [Figure 13] 12 is a diagram showing the posture change robot changing the posture of the substrate from a vertical posture to a horizontal posture in the second posture change step of FIG. 11. [Figure 14] 12 is a diagram showing the appearance of a posture-changing robot performing the first wetting step of FIG. 11. [Figure 15] 12 is a top view of the liquid supplying member supplying the wetting liquid in the first wetting stage of FIG. 11. [Figure 16] 12 is a side view of the liquid supplying member supplying the wetting liquid in the first wetting stage of FIG. 11. [Figure 17] 12 is a view showing a buffer chamber for performing the second wetting step of FIG. 11. [Figure 18] 18 is a graph showing an example of supply-on and supply-off times of a first liquid and a second liquid supplied to a substrate when a second wetting step of FIG. 17 is performed; [Figure 19] 18 is a graph showing another example of supply-on and supply-off times of the first and second liquids supplied to a substrate when the second wetting step of FIG. 17 is performed; [Figure 20] 13 is a view showing a hand according to another embodiment of the present invention; [Figure 21] 21 is a top view of the liquid supply member of FIG. 20 supplying a wetting liquid to a substrate. [Figure 22] 13 is a diagram showing a posture-changing robot according to another embodiment of the present invention. [Figure 23] 1 is a schematic view of a substrate processing apparatus according to another embodiment of the present invention, viewed from above; [Figure 24] 1 is a schematic view of a substrate processing apparatus according to another embodiment of the present invention, viewed from above; [Diagram 25] 1 is a schematic view of a substrate processing apparatus according to another embodiment of the present invention, viewed from above; [Figure 26] 18 is a graph showing another example of supply-on and supply-off times of the first and second liquids supplied to a substrate when the second wetting step of FIG. 17 is performed; [Figure 27] 18 is a graph showing another example of supply-on and supply-off times of the first and second liquids supplied to a substrate when the second wetting step of FIG. 17 is performed; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0066] Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily carry out the present invention. However, the present invention can be embodied in various different forms and is not limited to the embodiments described herein. In addition, in describing the preferred embodiments of the present invention in detail, detailed description of related known functions or configurations will be omitted if it is determined that such detailed description may unnecessarily obscure the gist of the present invention. Also, the same reference numerals are used throughout the drawings for parts having similar functions and functions.

[0067] To 'include' a certain element means that it does not exclude other elements, but may further include other elements, unless specifically stated to the contrary. Specifically, the terms "include" and "have" are intended to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the presence or possibility of addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0068] The singular expression includes the plural expression unless otherwise clearly intended in the context. Also, in the drawings, the shapes and sizes of elements may be exaggerated for clearer explanation.

[0069] Terms such as "first" and "second" may be used to describe various components, but the components should not be limited by the terms. The terms may be used to distinguish one component from another. For example, a first component may be named as a second component, and similarly, a second component may be named as a first component, without departing from the scope of the present invention.

[0070] When an element is referred to as being "coupled" or "connected" to another element, it should be understood that it may be directly coupled or connected to the other element, but there may also be other elements in between. Conversely, when an element is referred to as being "directly coupled" or "directly connected" to another element, it should be understood that there are no other elements in between. Other expressions describing the relationship between elements, such as "between" and "immediately between" or "adjacent to" and "directly adjacent to", should be interpreted in the same manner.

[0071] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention belongs. Terms, such as those commonly used and predefined, should be interpreted in a manner consistent with the meaning they have in the context of the relevant art, and should not be interpreted in an ideal or overly formal sense unless expressly defined in this application.

[0072] Furthermore, the components for returning the substrate W described below, for example, the return unit or return robot described below, may be referred to as a return module.

[0073] Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

[0074] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention viewed from above.

[0075] 1, a substrate processing apparatus 10 according to an embodiment of the present invention may include a first process processor 100, a second process processor 200, and a controller 600. The first process processor 100 and the second process processor 200 may be arranged along a first direction (X) when viewed from above. Hereinafter, a direction perpendicular to the first direction (X) when viewed from above is referred to as a second direction (Y), and a direction perpendicular to the first direction (X) and the second direction (Y) is referred to as a third direction (Z).

[0076] The first process processor 100 can perform liquid processing on a batch of multiple substrates W. For example, the first process processor 100 can perform cleaning processing on a batch of multiple substrates W. The first process processor 100 can simultaneously process a plurality of substrates W in a vertical position (a position in which the upper or lower surface of the substrate W is parallel to a direction perpendicular to the ground).

[0077] The first process processing section 100 may include a first load port unit 110 , an index chamber 120 , a return unit 130 , a batch processing section 140 , and an attitude changing section 150 .

[0078] The first load port unit 110 may include at least one load port. A transfer container F containing at least one substrate W may be placed in a load port of the first load port unit 110. The transfer container F may contain a plurality of substrates W. For example, the transfer container F may contain 25 substrates. The transfer container F may be called a cassette, a pod (FOD), a FOUP, or the like. The transfer container F may be loaded into the first load port unit 110 by a container return device. The substrates W contained in the transfer container F placed in the first load port unit 110 may be unprocessed substrates W. The unprocessed substrates W may be, for example, substrates W that have not been processed or substrates W that have been partially processed but require liquid processing.

[0079] Also, only the container F containing the unprocessed substrates W can be placed in the first load port unit 110. That is, the first load port unit 110 can only perform the role of loading the substrates W that require processing.

[0080] The index chamber 120 may be coupled with the first load port unit 110. The index chamber 120 and the first load port unit 110 may be arranged along a second direction (Y). The first index chamber 120 may include an index robot 122 and a posture changing unit 124. The index robot 122 may take out a substrate W that has not been processed or that requires processing from a container F seated in the first load port unit 110. The first return robot 122 may take out a substrate W from the container F and place the substrate W into a storage container (C) provided in the first index chamber 120. The first return robot 122 may have a placement hand that can simultaneously hold and return a plurality of substrates W (e.g., 25 substrates).

[0081] The storage container (C) may generally have a tub shape. The storage container (C) may have a storage space inside. A plurality of substrates W may be stored in the storage space of the storage container (C). For example, 50 substrates W may be stored in the storage space of the storage container (C). The storage container (C) may have a tub shape with at least two or more sides of the storage container (C) being open. A support member for supporting / holding the substrates W may be provided in the storage space of the storage container (C).

[0082] When the substrate W unloaded from the transfer container F is completely loaded into the storage container (C), the storage container (C) can be returned to the position changing unit 124 arranged in the index chamber 120 by a return means (e.g., a return rail or a linear motor guide, etc.) not shown. The position changing unit 124 can rotate the storage container (C). For example, the position changing unit 124 can rotate the storage container (C) so that the open part of the storage container (C) faces upward. When the storage container (C) is rotated so that the open part faces upward, the position of the substrate W stored in the storage container (C) can be changed from a horizontal position (a position in which the upper and lower surfaces of the substrate W are horizontal with the ground) to a vertical position. The horizontal position means a state in which the upper surface of the substrate W (e.g., a surface on which a pattern is formed) is aligned with the XY plane (i.e., the ground), and the vertical position can mean a state in which the upper surface of the substrate W is aligned with the XZ plane or the YZ plane (i.e., a plane perpendicular to the ground).

[0083] The return unit 130 may include a first return unit 132 that returns the substrate W between the index chamber 120 and the batch processing unit 140, and a second return unit 134 that returns the substrate W between the batch processing unit 140 and the orientation change unit 150 described later.

[0084] The first returning unit 132 may include a rail extending along a first direction (X) and a hand configured to return a plurality of substrates W at once. The first returning unit 132 may hold the substrates W whose attitudes have been changed by the attitude changing unit 124, and return the held substrates W to the batch processing unit 140. For example, the first returning unit 132 may return the substrates W whose attitudes have been changed by the attitude changing unit 124 to any one processing tank selected from the batch processing tanks 141-B1 to 143-B2 of the batch processing unit 140. For example, the first returning unit 132 may return the substrates W whose attitudes have been changed by the attitude changing unit 124 to the 1-1 batch processing tank 141-B1.

[0085] The second returning unit 134 may include a rail extending along the first direction (X) and a hand configured to return a plurality of substrates W at once. The second returning unit 134 may be configured to return the substrates W between the first batch processing unit 141, the second batch processing unit 142, and the third batch processing unit 143 of the batch processing unit 140. The second returning unit 134 may also be configured to return the substrates W between the batch processing unit 140 and the attitude changing unit 150.

[0086] In addition, the positions of the substrates W stored in the storage container (C) after their postures are changed by the posture changing unit 124 and the positions of the substrates W stored in the batch processing tank of the batch processing unit 140 can be arranged to be aligned along the first direction (X) when viewed from above.

[0087] Also, the substrates W stored in the batch processing tanks 141-B1 to 143-B2 of the batch processing unit 140 and the substrates W stored in the position changing processing tank 151 of the position changing unit 150 may be arranged to be aligned along the first direction (X) when viewed from above. Also, the substrates W stored in the batch processing tanks 141-B1 to 143-B2 of the batch processing unit 140 may be arranged to be aligned along the first direction (X) when viewed from above. That is, the support members 141-B1-6 of the batch processing tanks 141-B1 to 143-B2 and the support member 153 of the position changing processing tank 151 may be arranged to be aligned along the first direction (X) when viewed from above.

[0088] The batch processing unit 140 can perform liquid processing on a plurality of substrates W at once. The batch processing unit 140 can perform cleaning processing on a plurality of substrates W at once using a processing liquid. The batch processing unit 140 can perform liquid processing on a plurality of substrates W at once using a processing liquid. The processing liquid used in the batch processing unit 140 can be a chemical and / or a rinsing liquid. For example, the chemical can be a chemical having strong acid or strong base properties. Also, the rinsing liquid can be pure water. For example, the chemical can be appropriately selected from APM (Ammonia-Hydrogen Peroxide Mixture), HPM (Hydrochloricacid-Hydrogen Peroxide Mixture), FPM (Hydrofluoricacid-Hydrogen Peroxide Mixture), DHF (Diluted Hydrofluoric acid), DSP (Diluted Sulfuricacid Peroxide), a chemical for removing SiN, a chemical containing phosphoric acid, a chemical containing sulfuric acid, and the like. The rinsing liquid can be a liquid containing water. For example, the rinse liquid may be appropriately selected from pure water, ozone water, and the like.

[0089] The batch processing unit 140 can include a first batch processing unit 141, a second batch processing unit 142, and a third batch processing unit 143.

[0090] The first batch processing section 141 may include a first batch processing vessel 141-B1, a first batch processing vessel 141-B2, and a first placement return unit 141-TR.

[0091] In the 1-1 batch processing tank 141-B1, a plurality of substrates W can be simultaneously processed with a chemical such as DSP. In the 1-2 batch processing tank 141-B2, a plurality of substrates W can be simultaneously processed with a chemical such as DHF. However, the present invention is not limited to this, and the processing liquid used in the 1-1 batch processing tank 141-B1 and the 1-2 batch processing tank 141-B2 can be variously modified from the processing liquids described above.

[0092] The first placement return unit 141-TR may be configured to return the substrate W between the 1-1 batch processing bath 141-B1 and the 1-2 batch processing bath 141-B2.

[0093] The second batch processing section 142 may include a 2-1 batch processing vessel 142-B1, a 2-2 batch processing vessel 142-B2, and a second placement return unit 142-TR.

[0094] In the 2-1 batch processing bath 142-B1, a plurality of substrates W can be simultaneously processed with a chemical containing phosphoric acid. In the 2-2 batch processing bath 142-B2, a plurality of substrates W can be simultaneously processed with a rinsing liquid. However, the present invention is not limited to this, and the processing liquid used in the 2-1 batch processing bath 142-B1 and the 2-2 batch processing bath 142-B2 can be variously modified from the processing liquids described above.

[0095] The second placement and return unit 142-TR may be configured to be able to return the substrate W between the 2-1 batch processing vessel 141-B1 and the 2-2 batch processing vessel 142-B2.

[0096] The third batch processing section 143 can include a 3-1 batch processing vessel 142-B1, a 3-2 batch processing vessel 143-B2, and a third placement return unit 143-TR.

[0097] In the 3-1 batch processing tank 143-B1, a plurality of substrates W can be simultaneously processed with a chemical containing phosphoric acid. In the 3-2 batch processing tank 143-B2, a plurality of substrates W can be simultaneously processed with a rinsing liquid. However, the present invention is not limited to this, and the processing liquid used in the 3-1 batch processing tank 143-B1 and the 3-2 batch processing tank 143-B2 can be variously modified from the processing liquids described above.

[0098] The third placement and return unit 143-TR may be configured to return the substrate W between the 3-1 batch processing vessel 143-B1 and the 3-2 batch processing vessel 143-B2.

[0099] The batch processing tanks 141-B1 to 143-B2 have the same or similar structures except for the type of processing liquid (L) used, so the following description will focus on the 1-1 batch processing tank 141-B1 and will not repeat the description of the remaining batch processing tanks 141-B2 to 143-B2.

[0100] Figure 2 shows one of the batch processing vessels in Figure 1. For example, Figure 2 shows the 1-1st batch processing vessel 141-B1 among the batch processing vessels 141-B1 to 143-B2.

[0101] Referring to FIG. 2, the 1-1 batch processing vessel 141-B1 may include a processing vessel 141-B1-1, a heating member 141-B1-3, a supply line 141-B1-4, a recovery line 141-B1-5, and a support member 141-B1-6.

[0102] The treatment tank 141-B1-1 may have an accommodation space 141-B1-2 therein. The treatment tank 141-B1-1 may have a tub shape with an open top. The accommodation space 141-B1-2 of the treatment tank 141-B1-1 may accommodate (underflow) a treatment liquid (L). A heating member 141-B1-3 may be installed in the treatment tank 141-B1-1 to adjust the temperature of the treatment liquid (L) underflowing into the accommodation space 141-B1-2. The heating member 141-B1-3 may heat the temperature of the treatment liquid (L) underflowing into the accommodation space 141-B1-2 of the treatment tank 141-B1-1 to a set temperature based on the temperature of the treatment liquid (L) sensed by a temperature sensor (not shown).

[0103] The supply line 141-B1-4 can supply the processing liquid (L) to the accommodation space 141-B1-2. The recovery line 141-B1-5 can drain the processing liquid (L) from the accommodation space 141-B1-2. The supply line 141-B1-4 and the recovery line 141-B1-5 are each provided with a valve, and the liquid level of the processing liquid (L) supplied to the accommodation space 141-B1-2 (i.e., the amount of the processing liquid (L) flowing under the accommodation space 141-B1-2) can be adjusted to a set level based on the liquid level of the processing liquid (L) sensed by a liquid level sensor (not shown).

[0104] The support member 141-B1-6 is disposed in the receiving space 141-B1-2 and can support the substrate W. The support member 141-B1-6 can be configured to support a plurality of substrates W. For example, the support member 141-B1-6 can be configured to support 50 substrates W. The support member 141-B1-6 can be configured with a pair of rod-shaped bodies arranged facing each other, and each body can be formed with a support groove (not shown) in which the substrate W can be supported.

[0105] 1 again, the attitude changing unit 150 can change the attitude of the substrate W. The attitude changing unit 150 can change the attitude of the substrate W from a vertical attitude to a horizontal attitude. The attitude changing unit 150 can change the attitude of the substrate W so that the substrate W processed in a vertical attitude from the batch processing unit 140 can be post-processed in the single wafer processing chambers 230, 240 that process a single substrate W in a horizontal attitude. The attitude changing unit 150 can be disposed between the batch processing unit 140 and the second process processing unit 200.

[0106] The position change unit 150 may include a position change processing tank 151 and a position change robot 156. The position change processing tank 151 may be wider than the batch processing tanks 141-B1 to 143-B2 when viewed from above. For example, the position change processing tank 151 may be wider in a second direction (Y, one direction) than the batch processing tanks 141-B1 to 143-B2 when viewed from above. Also, the position change processing tank 151 may have the same width in a first direction (X, other direction) as the batch processing tanks 141-B1 to 143-B2 when viewed from above.

[0107] FIG. 3 is a diagram showing the appearance of the attitude changing processing tank of FIG.

[0108] Referring to FIG. 3, the position-changing treatment vessel 151 may include a treatment vessel 152 , a support member 153 , a supply line 154 , and a recovery line 155 .

[0109] The treatment tank 152 may have a tub shape with an open top. The treatment tank 152 may have a square tub shape with an open top. The treatment tank 152 may have storage spaces (A, B) inside which the treatment liquid (L) can be stored (underflow). The treatment liquid (L) that underflows in the treatment tank 152 may be a liquid containing water. The type of the treatment liquid (L) that underflows in the treatment tank 152 may be the same type of liquid as the wetting liquid sprayed in the buffer chamber 210 described below. For example, the treatment liquid (L) that underflows in the treatment tank 152 and the wetting liquid sprayed in the buffer chamber 210 may all be liquids containing water.

[0110] The support members 153 are disposed in the receiving spaces (A, B) and can support the substrates W. The support members (A, B) can be configured to support a plurality of substrates W. For example, the support member 153 can be configured to support 50 substrates W. The support member 153 can be configured with a pair of rod-shaped bodies disposed facing each other, and each body can be formed with a support groove (not shown) in which the substrate W can be supported.

[0111] The supply line 154 can supply the processing liquid (L) to the accommodation spaces (A, B). The recovery line 155 can drain the processing liquid (L) to the accommodation spaces (A, B). Valves are installed in each of the supply line 154 and the recovery line 155, and the liquid level of the processing liquid (L) supplied to the accommodation spaces (A, B) (i.e., the amount of processing liquid (L) flowing under the accommodation spaces (A, B)) can be adjusted to a set level based on the liquid level of the processing liquid (L) sensed by a liquid level sensor (not shown).

[0112] Furthermore, the accommodation space (A, B) may include a support area (A) and a position change area (B). The support area (A) may be an area where the support member 153 supports the substrate W. The position change area (B) may be an area where the position of the substrate W is changed by a position change robot 156 described later.

[0113] 1 again, the posture change robot 156 may be disposed on one side of the posture change treatment tank 151. The posture change robot 156 may be disposed between the posture change treatment tank 151 and a buffer chamber 210, which will be described later. The posture change robot 156 may include a hand 156-H and a joint unit 156-R. The hand 156-H may be coupled to the joint unit 156-R. The joint unit 156-R may change the position of the hand 156-H.

[0114] Figure 4 is a schematic diagram showing the posture change robot of Figure 1. Referring to Figure 4, the posture change robot 156 according to an embodiment of the present invention can change the posture of the substrate W from a vertical posture to a horizontal posture in the posture change processing bath 151, and return the substrate W that has been changed to the horizontal posture to the buffer chamber 210 of the second process processing unit 200. In addition, all of the posture change robots 156 can be articulated robots. The posture change robot 156 can be a 6-axis articulated robot.

[0115] The joint unit 156-R may be a multi-joint arm having at least two or more axes. For example, the joint unit 156-R may be a six-axis multi-joint arm. The joint unit 156-R may move the hand 156-H along at least one of a first direction (X), a second direction (Y), and a third direction (Z) to change the position of the hand 156-H. In addition, the joint unit 156-R may rotate the hand 156-H based on one axis of the first direction (X), the second direction (Y), and the third direction (Z).

[0116] The joint unit 156 -R of the posture-changing robot 156 can include a base 171 , a rotating body 172 , a first arm 173 , a second arm 174 , a third arm 175 , and a fourth arm 176 .

[0117] The base 171 may be coupled to a rotating body 172. The rotating body 172 may rotate with respect to the base 171. The rotating body 172 may rotate around a rotation axis that is perpendicular to the ground. The first arm 173 may be coupled to the rotating body 172. The first arm 173 may rotate around a rotation axis that is horizontal to the rotating body. The second arm 174 may be coupled to the first arm 173. The second arm 174 may rotate around a rotation axis that is horizontal to the first arm 173. The third arm 175 may be coupled to the second arm 174. The third arm 175 may rotate around a rotation axis that is in the length direction of the second arm 174 (or in the length direction of the third arm 175). The fourth arm 176 may rotate around a rotation axis that is perpendicular to the length direction of the third arm 175. In addition, the fourth arm 176 may rotate the hand 156-H. For example, the fourth arm 176 may have a rotation shaft (not shown) capable of rotating the hand 156-H. The hand 156-H may be rotated about a rotation axis perpendicular to the rotation axis of the fourth arm 176.

[0118] Fig. 5 is a view showing the hand of Fig. 4. Referring to Fig. 5, the hand 156-H of the posture change robot 156 may include a support body 161, a first guide part 162, a second guide part 163, a driving member 164, a chucking body 165, a fastening body 166, a vision member 167, and a liquid supply member 168.

[0119] The support body 161 may support a lower surface of the substrate W. The support body 161 may support the lower surface of the substrate W among an upper surface of the substrate W on which a pattern is formed and a lower surface of the substrate W on which a pattern is not formed. That is, the substrate W may be placed on the support body 161.

[0120] The support body 161 may be provided with a first guide part 162 and a second guide part 163. The first guide part 162 may be a support pad close to a fastening body 166 described later. The second guide part 163 may be a support pad far from the fastening body 166 described later. The first guide part 162 and the second guide part 163 may be provided in pairs. The first guide part 162 and the second guide part 163 may support the lower surface and / or the side surface of the substrate W. The first guide part 162 and the second guide part 163 may have a stepped shape on their upper surfaces. For example, the height of an inner region of the upper surface of the first guide part 162 that supports the lower surface of the substrate W may be lower than the height of an outer region that does not support the lower surface of the substrate W. Similarly, the height of an inner region of the upper surface of the second guide part 163 that supports the lower surface of the substrate W may be lower than the height of an outer region that does not support the lower surface of the substrate W. That is, the substrate W can be placed on the support body 161 via a first guide part 162 and a second guide part 163 installed on the support body 161. The substrate W being placed on the support body 161 should be interpreted as including not only the case where the substrate W is in direct contact with the support body 161, but also the case where the substrate W is placed on the first guide part 162 and the second guide part 163 installed on the support body 161.

[0121] The driving member 164 may be fastened to the fastening body 166. The driving member 164 may be a driver capable of moving the chucking body 165 in a lateral direction. The driving member 164 may be provided in a pair. For example, the driving member 164 may be provided to correspond to each of the pair of chucking bodies 165. The pair of driving members 164 may move the pair of chucking bodies 165 in a lateral direction. The chucking bodies 165 may be moved in a direction toward a side of the substrate W and in a direction away from the side of the substrate W. Thus, the chucking body 165 may chuck the substrate W placed on the support body 161. In other words, the support body 161 and the chucking body 165 may be bodies that grip the substrate W.

[0122] The fastening body 166 may be a body that connects the chucking body 165 and the support body 161 to the joint portion 156-R. The fastening body 166 may be a body that connects the chucking body 165 and the support body 161 to the fourth arm 176 of the joint portion 156-R. The fastening body 166 may be fastened to a rotating shaft of the fourth arm 176 of the joint portion 156-R.

[0123] Each of the support bodies 161 may be provided with a first guide portion 162 and a second guide portion 163. The first guide portion 162 may be a protrusion close to a fastening body 166 described below. The second guide portion 163 may be a protrusion relatively far from the fastening body 166 described below. The second guide portion 163 may be disposed farther from the fastening body 166 than the first guide portion 162. The first guide portion 162 and the second guide portion 163 may support sides of the substrate W. The first guide portion 162 and the second guide portion 163 support sides of the substrate W, and the distance between the two may be slightly smaller than the diameter of the substrate W.

[0124] The vision member 167 may capture an image of the substrate W and / or the support body 161. The captured image may be transmitted to a controller 600, which will be described later. The controller 600 may generate a control signal for controlling the operation of the attitude changing robot 156 based on the image captured by the vision member 167.

[0125] The liquid supply member 168 can supply a wetting liquid (WL) to the substrate W placed on the support body 161. The wetting liquid (WL) can include water. The wetting liquid (WL) supplied by the liquid supply member 168 can be the same type of liquid as the processing liquid (L) flowing under the accommodation spaces (A, B). In addition, the wetting liquid (WL) supplied by the liquid supply member 168 can be the same type of liquid as the wetting liquid (WL) supplied to the buffer chamber 210 described later.

[0126] The liquid supply member 168 may include a first nozzle 168a and a second nozzle 168b. At least one of the first nozzle 168a and the second nozzle 168b may be provided. A plurality of the first nozzle 168a and the second nozzle 168b may be provided. The first nozzle 168a may supply the wetting liquid (WL) to a first region of the substrate W placed on the support body 161. The second nozzle 168b may supply the wetting liquid (WL) to a second region of the substrate W placed on the support body 161. The first region and the second region may be different regions from each other. The first region and the second region may be edge regions of the substrate W as described below. The first region may be in contact with the first nozzle 168a, and the second region may be in contact with the second nozzle 168b.

[0127] The distance between the first region and the first nozzle 168a may be shorter than the distance between the second region and the second nozzle 168b. That is, the spraying distance of the wetting liquid (WL) supplied by the first nozzle 168a may be different from the spraying distance of the wetting liquid (WL) supplied by the second nozzle 168b. For example, the spraying distance of the wetting liquid (WL) supplied by the first nozzle 168a may be shorter than the spraying distance of the wetting liquid (WL) supplied by the second nozzle 168b.

[0128] Also, when viewed from above, the first nozzles 168a may be disposed between the second nozzles 168b. The second nozzles 168b may be disposed relatively closer to the chucking body 165, i.e., on the outside. The first nozzles 168a may be disposed relatively farther from the chucking body 165, i.e., on the inside.

[0129] The wetting liquid (WL) ejection directions of the first nozzle 168a and the second nozzle 168b may be different from each other. For example, when viewed from above, based on an imaginary baseline passing through the center of the substrate W and the center of the vision member 167, the first nozzle 168a may supply the wetting liquid (WL) in a direction parallel to this baseline, and the second nozzle 168b may supply the wetting liquid (WL) in a direction inclined to this baseline.

[0130] The diameters of the spray holes of the first nozzle 168a and the second nozzle 168b may be different from each other. For example, the diameter of the spray holes of the first nozzle 168a may be larger than the diameter of the spray holes of the second nozzle 168b. For example, the supply flow rates per unit time of the wetting liquid (WL) delivered to the first nozzle 168a and the second nozzle 168b may be equal to each other. Therefore, the spray distance of the wetting liquid (WL) sprayed from the first nozzle 168a may be shorter than the spray distance of the wetting liquid (WL) sprayed from the second nozzle 168b.

[0131] In addition, the first nozzle 168 a and the second body 168 b may be installed on the support body 161 .

[0132] 1 again, the second process processor 200 can process the substrate W processed in the first process processor 100. The second process processor 200 can process the substrate W processed in the first process processor 100, and can perform liquid processing or drying processing on the substrate W in a single wafer manner.

[0133] The second process processing section 200 may include a buffer chamber 210, a first return chamber 220, a single wafer liquid processing chamber 230, a drying chamber 240, a buffer section 250, a second return chamber 260, and a second load port unit 270. The single wafer liquid processing chamber 230 and the drying chamber 240 may all be referred to as single wafer processing chambers.

[0134] The buffer chamber 210 can temporarily store the substrates W. The buffer chamber 210 can be disposed on a return path of the substrates W, which are processed in the batch processing baths 141-B1 to 143-B2, and whose postures are changed by the posture changing robot 156 in the posture changing unit 150 and returned to the single wafer processing chambers 230 and 240. That is, the buffer chamber 210 can be disposed on a return path of the substrates W, which are returned between the batch processing baths 141-B1 to 143-B2 and the single wafer processing chambers 230 and 240.

[0135] The attitude changing robot 156 can change the attitude of the substrate W and transport the substrate W whose attitude has been changed into the buffer chamber 210. The buffer chamber 210 can temporarily store the substrate W and supply a wetting liquid to the substrate W so that the substrate W can maintain a wetting state. The buffer chamber 210 can supply a wetting liquid to the substrate W to form a liquid film. The substrate W on which the liquid film has been formed can be transported out of the buffer chamber 210 by a first returning robot 222 described below. The substrate W transported out of the buffer chamber 210 can be returned to the single wafer processing chambers 230, 240 by the first returning robot 222.

[0136] In addition, the buffer chamber 210 may be disposed at a higher position than the position changeable treatment tank 151. For example, if the position changeable treatment tank 151 is disposed on one layer, the buffer chamber 210 may be disposed on the second layer or on the 1.5th layer.

[0137] In addition, the buffer chamber 210 may be arranged in parallel with a single wafer liquid processing chamber 230 (described later) along the second direction (Y).

[0138] Also, a plurality of single wafer liquid processing chambers 230, which will be described later, may be provided. The single wafer liquid processing chambers 230 may be stacked on top of each other. For example, three single wafer liquid processing chambers may be provided and stacked on top of each other as shown in FIG. 6. The buffer chamber 210 may be installed at a higher position than the single wafer liquid processing chamber 230 installed at the bottom among the plurality of single wafer liquid processing chambers 230, and at a lower position than the single wafer liquid processing chamber 230 installed at the top among the plurality of single wafer liquid processing chambers 230. For example, the buffer chamber 210 may be installed at a height of about 1.5 or 2.5 layers. This is to allow the posture changing robot 156 to more easily load the substrate W into the buffer chamber 210.

[0139] Fig. 7 is a schematic diagram of the buffer chamber of Fig. 6. Referring to Fig. 7, the buffer chamber 210 may include a chuck 310, liquid supply units 320 and 330, a cup 340, a drain line 350, and an elevator driver 360.

[0140] The chuck 310 is capable of supporting and rotating the substrate W. The chuck 310 may include a chuck body 312, support pins 314, a rotating shaft 315, and a hollow motor 316.

[0141] The chuck body 312 may have a plate shape. When viewed from above, the chuck body 312 may have a through opening formed in a central region. At least a portion of a liquid supply shaft 326, which will be described later, may be inserted into the through opening formed in the chuck body 312. Support pins 314 may be installed on the chuck body 312. The support pins 314 may support and chuck the lower surface and / or side surface of the substrate W. The support pins 314 may be provided to be movable laterally by a pin moving mechanism (not shown).

[0142] The rotating shaft 315 may be coupled to the chuck body 312. The rotating shaft 315 may be a hollow shaft having a hollow space. The rotating shaft 315 may be coupled to the chuck body 312 to rotate the chuck body 312. The rotating shaft 315 may be coupled to the hollow motor 316 to be rotated by receiving power from the hollow motor 316. A liquid supply shaft 326, which will be described later, may be inserted into the hollow space of the rotating shaft 315.

[0143] The liquid supply units 320 and 330 can supply liquid to the substrate W. The liquid supply units 320 and 330 can supply a wetting liquid and a cleaning liquid to the substrate W. The liquid supply unit 320 can include a first liquid supply unit 320 and a second liquid supply unit 330. The first liquid supply unit 320 and the second liquid supply unit 330 can supply a wetting liquid or a cleaning liquid to the rotating substrate WN. For example, the first liquid supply unit 320 can be configured to supply a first liquid, which is water, as a wetting liquid to the upper surface of the rotating substrate W. Also, the second liquid supply unit 330 can be configured to supply a second liquid, which is isopropyl alcohol (IPA), as a cleaning liquid to the lower surface of the rotating substrate W.

[0144] The first liquid supplier 320 may be configured to supply a first liquid to an upper surface of the substrate W supported by the chuck 310. The first liquid supplier 320 may include a first nozzle 322 and a first liquid supply source 324.

[0145] The first nozzle 322 may supply a first liquid to an upper surface of the substrate W. The first liquid supply source 324 may store the first liquid and supply the first liquid to the first nozzle 322. The first nozzle 322, which receives the first liquid from the first liquid supply source 324, may eject the first liquid onto the substrate W. The first nozzle 322 may be provided to be movable in vertical and / or lateral directions by a nozzle moving mechanism (not shown).

[0146] The second liquid supply unit 330 may be configured to supply a second liquid to the lower surface of the substrate W supported by the chuck 310. The second liquid supply unit 330 may be configured to supply a second liquid (e.g., isopropyl alcohol as a cleaning liquid) that is a type of liquid that is more volatile than the first liquid (e.g., water as a wetting liquid) supplied by the first liquid supply unit 320.

[0147] The second liquid supply section 330 may include a second nozzle 332 , a second liquid supply line 333 , a second liquid supply source 334 , a cover 335 , a liquid supply shaft 336 , and a bearing 337 .

[0148] The second nozzle 332 may be configured to supply the second liquid to a lower surface of the substrate W rotating while being supported by the chuck 310. The second nozzle 332 may be configured to supply the second liquid to a lower surface of the substrate W rotating while being supported by the chuck 310. The second nozzle 332 may be connected to a second liquid supply line 333. The second liquid supply line 333 may be connected to a second liquid supply source 334. The second liquid supplied by the second liquid supply source 334 may be delivered to the second nozzle 332 through the second liquid supply line 333. The second liquid delivered to the second nozzle 332 through the second liquid supply line 333 may be supplied to a lower surface of the substrate W rotating while being supported by the chuck 310.

[0149] In addition, the cover 335 may cover the through opening formed in the central region of the above-mentioned chuck body 312. This can minimize the liquids supplied by the first liquid supply unit 320 and the second liquid supply unit 330 from flowing into the through opening formed in the chuck body 312. In addition, the above-mentioned second nozzle 332 may be installed in the cover 335.

[0150] The liquid supply shaft 336 may be at least partially inserted into a through-hole formed in the chuck body 312. A bearing 337 may be installed between the outer surface of the liquid supply shaft 336 and the chuck body 312. Thus, even if the rotating shaft 315 is rotated by the hollow motor 316, the liquid supply shaft 336 may be fixed without being rotated. That is, the liquid supply shaft 336 may be independent of the rotation of the rotating shaft 315. The above-mentioned second liquid supply line 333 may be provided in a hollow space of the liquid supply shaft 336. This has an advantage that the second liquid supply line 333 may be minimized from being damaged by the rotation of the chuck body 312, etc., or the second liquid supply line 333 may be exposed to the first liquid or the second liquid, resulting in damage to the second liquid supply line 333.

[0151] The cup 340 can collect the liquid supplied by the liquid supplying units 320 and 330. The cup 340 can be configured to separately collect the first liquid supplied by the first liquid supplying unit 320 and the second liquid supplied by the second liquid supplying unit 330. In addition, the cup 340 can prevent the liquid supplied by the liquid supplying units 320 and 330 from being scattered to the outside.

[0152] The cup 340 may include a first cup 341, a second cup 342, and a third cup 343. The first cup 341 may be an inner cup. The first cup 341 may define a first drain space 341a, a second drain space 341b, and a third drain space 341c. The first drain space 341a, the second drain space 341b, and the third drain space 341c may be spaces for collecting liquid that is supplied to the substrate W and splashed therefrom. For example, the first drain space 341a may be a space for collecting the first liquid that is supplied to the substrate W by the first liquid supply unit 320 and splashed therefrom. The second drain space 341b may be a space for collecting the second liquid that is supplied to the substrate W by the second liquid supply unit 330 and splashed therefrom. In addition, the third drain space 341c may be a space for collecting the remaining liquid that is supplied by the first liquid supply unit 320 and the second liquid supply unit 330 and scattered from the substrate W but has not yet been collected by the first drain space 341a and the second drain space 341b.

[0153] The first drain space 341a may be positioned adjacent to the chuck 310, the second drain space 341b may be positioned farther from the chuck 310 than the first drain space 341a, and the third drain space 341c may be positioned farther from the chuck 310 than the second drain space 341b.

[0154] In addition, the drain line 350 can discharge the liquid collected in the drain spaces 341a to 341c to the outside. The drain line 350 may include a first drain line 351 connected to the first drain space 341a, a second drain line 352 connected to the second drain space 341b, and a third drain line 353 connected to the third drain space 341c.

[0155] The second cup 342 may be a middle cup. The third cup 343 may be an outer cup. The first cup 341 may define a first recovery path D1 corresponding to the first drain space 341a. The first cup 341 and the second cup 342 may be combined with each other to define a second recovery path D2 corresponding to the second drain space 341b. The second liquid supplied by the second liquid supply unit 330 described above may be recovered through the second recovery path D2. The second cup 342 and the third cup 343 may be combined with each other to define a third recovery path D3. The first liquid supplied by the first liquid supply unit 320 described above may be recovered through the third recovery path D3.

[0156] The lift driver 360 can lift and lower the cup 340. The lift driver 360 can lift and lower the first cup 341, the second cup 342, and the third cup 343 independently of each other. The lift driver 360 can include a first lift driver 361 for lifting and lowering the first cup 341, a second lift driver 362 for lifting and lowering the second cup 342, and a third lift driver 363 for lifting and lowering the third cup 343. The lift driver 360 can adjust the heights of the cups 351, 352, and 353 to adjust the heights of the collection paths D1, D2, and D2 and the intervals between the collection paths D1 and D2.

[0157] 1 again, a first return chamber 220 may be disposed on one side of the buffer chamber 210 and the single wafer liquid processing chamber 230. The buffer chamber 210 described above may be disposed between the first return chamber 220 and the position changing unit 150. Also, the first return chamber 220 may be disposed between the buffer chamber 210 and a single wafer drying chamber 240, which will be described later. Also, the first return chamber 220 may be disposed between the single wafer liquid processing chamber 230 and the single wafer drying chamber 240, which will be described later.

[0158] The first return chamber 220 may include a first return robot 222 and a return rail 223. The first return robot 222 may move along the first return rail 223. The return rail 223 may have a length direction aligned with the second direction (Y). The first return robot 222 may move along the return rail 223.

[0159] Fig. 8 is a diagram illustrating the first return robot of Fig. 1. Referring to Fig. 8, the first return robot 222 may include a rail running part 222A, a hand driving part 222B, and a hand part 222C. The rail running part 222A may be provided to be slidable on the return rail 223 described above. The rail running part 222A may include a driving motor so that it can run along the return rail 223.

[0160] The hand driver 222B can rotate the hand unit 222C. The hand driver 222B can move the hand unit 222C in an up-down direction. The hand driver 222B can include a drive box 222B1 and a drive shaft 222B2. The drive box 222B1 can include a drive device that rotates the drive shaft 222B2 or moves the drive shaft 222B2 in an up-down direction. The drive shaft 222B2 can rotate the hand unit 222C 360 degrees. That is, the position of the hand unit 222C can be changed in the second direction (Y) by the rail traveling unit 222A, and the hand driver 222B can be rotated around the third direction (Z) or the height of the hand unit 222C can be changed in the third direction (Z).

[0161] The hand unit 222C may include a first hand 222C-A1, a first hand moving body 222C-A2, a second hand 222C-B1, a second hand moving body 222C-B2, a third hand 222C-C1, a third hand moving body 222C-C2, and a sliding body 222C-D.

[0162] The first hand 222C-A1 may be configured to support the lower surface of the substrate W. The first hand 222C-A1 may be installed at a higher height than the second hand 222C-B1 and the third hand 222C-C1. The first hand 222C-A1 may be coupled to a first hand moving body 222C-A2. The first hand moving body 222C-A2 may be slidably installed in a second sliding groove 222C-D2 formed in the sliding body 222C-D. The first hand 222C-A1 may be configured to be able to move forward and backward by the movement of the first hand moving body 222C-A2.

[0163] The second hand 222C-B1 may be configured to support the lower surface of the substrate W. The second hand 222C-B1 may be installed at a height higher than the third hand 222C-C1 and lower than the first hand 222C-A1. The second hand 222C-B1 may be coupled to a second hand moving body 222C-B2. The second hand moving body 222C-B2 may be slidably installed in a first sliding groove 222C-D1 formed in the sliding body 222C-D. The second hand 222C-B1 may be configured to be able to move forward and backward by the movement of the second hand moving body 222C-B2.

[0164] The third hand 222C-C1 may be configured to support a lower surface of the substrate W. The third hand 222C-C1 may be installed at a lower height than the first hand 222C-A1 and the second hand 222C-B1. The third hand 222C-C1 may be coupled to a third hand moving body 222C-C2. The third hand moving body 222C-C2 may be slidably installed on the opposite side to the first and second hand moving bodies in a first sliding groove 222C-D1 or a second sliding groove 222C-D2 formed in the sliding body 222C-D. Differently, the third hand moving body 222C-C2 may be slidably installed on the opposite side to the first and second hand moving bodies in a third sliding groove (not shown) which is a groove different from the first sliding groove 222C-D1 and the second sliding groove 222C-D2 formed in the sliding body 222C-D. The third hand 222C-C1 may be configured to be able to move forward and backward by the movement of the third hand moving body 222C-C2.

[0165] Referring again to FIG. 1, a single wafer processing chamber may be disposed on one side and the other side of the first return chamber 220. The single wafer processing chamber may include a single wafer liquid processing chamber 230 and a single wafer drying chamber 240. The single wafer liquid processing chamber 230 may be disposed on one side of the first return chamber 220. The single wafer drying chamber 240 may be disposed on the other side of the first return chamber 220. A plurality of the single wafer liquid processing chambers 230 and the single wafer drying chambers 240 may be provided. As described above, a plurality of the single wafer liquid processing chambers 230 may be provided and installed so as to be stacked on top of each other. A plurality of the single wafer drying chambers 240 may also be provided and installed so as to be stacked on top of each other. A number of the single wafer liquid processing chambers 230 and the single wafer drying chambers 240 (n is a natural number) may be provided.

[0166] FIG. 9 is a schematic diagram of the single wafer liquid processing chamber of FIG.

[0167] The single-wafer liquid processing chamber 230 rotates the substrate W in a horizontal position, and can process the substrate W by supplying a processing liquid to the rotating substrate W. In the single-wafer liquid processing chamber 230, the substrate W can be processed one by one. The processing liquid supplied to the single-wafer liquid processing chamber 230 can be an organic solvent. For example, the processing liquid supplied to the single-wafer liquid processing chamber 230 can be isopropyl alcohol (IPA). In the single-wafer liquid processing chamber 230, an organic solvent can be supplied to the rotating substrate W, and the substrate W can be rotated to perform a drying process. In contrast, in the single-wafer liquid processing chamber 9230, an organic solvent is supplied to the rotating substrate W, and the substrate W is returned to the drying chamber 240 described later in a state where it is wet with the organic solvent, and the substrate W can be dried from the drying chamber 240.

[0168] The single wafer liquid processing chamber 230 can include a housing 410 , a processing vessel 420 , a support unit 440 , a lift unit 460 , and a liquid supply unit 480 .

[0169] The housing 410 has a processing space 412 therein. The housing 410 may have a tub shape having a space therein. The processing vessel 420, the support unit 440, the lifting unit 460, and the liquid supply unit 480 may be provided in the internal space 412 of the housing 410. The housing 410 may have a square shape when viewed from the front cross section. However, the shape is not limited thereto, and the housing 410 may be modified into various shapes that can have the processing space 412.

[0170] The processing vessel 420 has a tub shape with an open top. The processing vessel 420 has an internal collecting tub 422 and an external collecting tub 426. The collecting tubs 422 and 426 collect different processing liquids from among the processing liquids used in the process. The internal collecting tub 422 is provided in a ring shape surrounding the substrate support unit 440, and the external collecting tub 426 is provided in a ring shape surrounding the internal collecting tub 426. An inner space 422A of the internal collecting tub 422 and the internal collecting tub 422 function as a first inlet 422A through which the processing liquid flows into the internal collecting tub 422. A space 426a between the internal collecting tub 422 and the external collecting tub 426 functions as a second inlet 426a through which the processing liquid flows into the external collecting tub 426. According to an example, the inlets 422a and 426a may be located at different heights. Recovery lines 422b, 426b are connected to the bottom of each of the recovery tubs 422, 426. The processing solutions flowing into each of the recovery tubs 422, 426 can be supplied to an external processing solution regeneration system (not shown) through the recovery lines 422b, 426b for reuse.

[0171] The supporting unit 440 supports the substrate W in the processing space 412. The supporting unit 440 supports and rotates the substrate W during processing. The supporting unit 440 includes a supporting plate 442, supporting pins 444, a chuck pin 446, and rotary driving members 448 and 449.

[0172] The support plate 442 is generally provided in a circular plate shape and has an upper surface and a lower surface. The lower surface has a smaller diameter than the upper surface. That is, the support plate 442 may have a shape in which the upper surface is wider and the lower surface is narrower. The upper surface and the lower surface are positioned so that their central axes coincide with each other. In addition, a heating means (not shown) may be provided on the support plate 442. The heating means provided on the support plate 442 may heat the substrate W placed on the support plate 442. The heating means may generate heat. The heat generated by the heating means may be hot or cold heat. The heat generated by the heating means may be transferred to the substrate W placed on the support plate 442. In addition, the heat transferred to the substrate W may heat the processing solution supplied to the substrate W. The heating means may be a heater and / or a cooling coil. However, the present invention is not limited thereto, and the heating means may be variously modified from a known device.

[0173] A plurality of support pins 444 are provided. The support pins 444 are arranged at predetermined intervals along the edge of the upper surface of the support plate 442 and protrude upward from the support plate 442. The support pins 444 are arranged so that they combine with each other to form an overall ring shape. The support pins 444 support the rear edge of the substrate W so that the substrate W is spaced a predetermined distance from the upper surface of the support plate 442.

[0174] A plurality of chuck pins 446 are provided. The chuck pins 446 are disposed at the center of the support plate 442 so as to be farther away from the support pins 444. The chuck pins 446 are provided so as to protrude upward from the upper surface of the support plate 442. The chuck pins 446 support the sides of the substrate W so that the substrate W does not move sideways from the normal position when the support plate 442 is rotated. The chuck pins 446 are provided so as to be able to linearly move between an outer position and an inner position along the radial direction of the support plate 442. The outer position is a position farther away from the center of the support plate 442 than the inner position. When the substrate W is loaded or unloaded from the support plate 442, the chuck pins 446 are positioned at the outer position, and when a process is performed on the substrate W, the chuck pins 446 are positioned at the inner position. The inner position is a position where the chuck pins 446 and the sides of the substrate W contact each other, and the outer position is a position where the chuck pins 446 and the substrate W are spaced apart from each other.

[0175] The rotary drive members 448, 449 rotate the support plate 442. The support plate 442 can rotate around its own central axis by the rotary drive members 448, 449. The rotary drive members 448, 449 include a support shaft 448 and a drive unit 449. The support shaft 448 has a barrel shape facing the fourth direction 16. The upper end of the support shaft 448 is fixedly coupled to the bottom surface of the support plate 442. According to an example, the support shaft 448 can be fixedly coupled to the center of the bottom surface of the support plate 442. The drive unit 449 provides a driving force for the support shaft 448 to rotate. The support shaft 448 is rotated by the drive unit 449, and the support plate 442 can rotate together with the support shaft 448.

[0176] The lifting unit 460 moves the processing vessel 420 linearly in the vertical direction. As the processing vessel 420 moves up and down, the relative height of the processing vessel 420 with respect to the support plate 442 is changed. When the substrate W is loaded or unloaded from the support plate 442, the lifting unit 460 lowers the processing vessel 420 so that the support plate 442 protrudes from the upper part of the processing vessel 420. Also, when a process is performed, the lifting unit 460 adjusts the height of the processing vessel 420 so that the processing liquid supplied to the substrate W can flow into the preset collection tubs 422 and 426 according to the type of processing liquid. The lifting unit 460 includes a bracket 462, a moving shaft 464, and a driving mechanism 466. The bracket 462 is fixedly installed on the outer wall of the processing vessel 420, and a moving shaft 464 that is moved up and down by the driving mechanism 466 is fixedly connected to the bracket 462. Alternatively, the lifting unit 460 can move the support plate 442 up and down.

[0177] The liquid supply unit 480 can supply a processing liquid to the substrate W. The processing liquid can be an organic solvent, a chemical or a rinsing liquid as described above. The organic solvent can be an isopropyl alcohol (IPA) liquid.

[0178] The liquid supply unit 480 may include a moving member 481 and a nozzle 489. The moving member 481 moves the nozzle 489 to a process position and a waiting position. The process position is a position where the nozzle 489 faces the substrate W supported by the supporting unit 440. According to an example, the process position is a position where the processing liquid is discharged onto the upper surface of the substrate W. The process position may also include a first supply position and a second supply position. The first supply position may be a position closer to the center of the substrate W than the second supply position, and the second supply position may be a position including an edge of the substrate. Alternatively, the second supply position may be an area adjacent to the edge of the substrate. The waiting position is defined as a position where the nozzle 489 leaves the process position. According to an example, the waiting position may be a position where the nozzle 489 waits before or after a process is performed on the substrate W.

[0179] The moving member 481 includes an arm 482, a support shaft 483, and a driver 484. The support shaft 483 is located at one side of the processing vessel 420. The support shaft 483 has a rod shape with its length direction facing the fourth direction. The support shaft 483 is provided to be rotatable by the driver 484. The support shaft 483 is provided to be capable of moving up and down. The arm 482 is connected to the upper end of the support shaft 483. The arm 482 is extended vertically from the support shaft 483. A nozzle 489 is connected to the end of the arm 482. The nozzle 489 can be swung together with the arm 482 by rotating the support shaft 483. The nozzle 489 can be swung to move to a process position and a standby position. Alternatively, the arm 482 can be provided to be capable of moving forward and backward with its length direction facing. When viewed from above, the path along which the nozzle 489 moves can be coincident with the central axis of the substrate W at the process position.

[0180] FIG. 10 is a schematic diagram of the single-wafer drying chamber of FIG.

[0181] A plurality of single-wafer drying chambers 240 may be provided. A plurality of single-wafer drying chambers 240 may be provided and stacked vertically. In the single-wafer drying chamber 240, the substrate W may be treated using a supercritical fluid. The single-wafer drying chamber 240 may be a supercritical chamber that dries one substrate W in a single-wafer manner. The single-wafer drying chamber 240 may be a supercritical chamber that dries the substrate W using a supercritical fluid.

[0182] The single-wafer drying chamber 240 can remove the processing liquid remaining on the substrate W by using a drying fluid (G) in a supercritical state. The single-wafer drying chamber 240 can be a supercritical chamber that uses a supercritical fluid to remove the processing liquid (e.g., a rinsing liquid or an organic solvent) remaining on the substrate W. For example, the single-wafer drying chamber 240 can perform a drying process that removes the organic solvent remaining on the substrate W by using carbon dioxide (CO2) in a supercritical state.

[0183] The single-wafer drying chamber 240 may include a body 510, a heating member 520, a fluid supply unit 530, a fluid exhaust unit 550, and a lifting member 560. The body 510 may have an internal space 518 in which the substrate W is processed. The body 510 may provide the internal space 518 in which the substrate W is processed. The body 510 may provide the internal space 518 in which the substrate W is dried by a drying fluid (G) in a supercritical state.

[0184] The body 510 may include an upper body 512 and a lower body 514. The upper body 512 and the lower body 514 may be combined with each other to form the internal space 518. The substrate W may be supported in the internal space 518. For example, the substrate W may be supported by a support member (not shown) in the internal space 518. The support member may be configured to support a lower surface of an edge region of the substrate W. Any one of the upper body 512 and the lower body 514 may be coupled to a lifting member 560 and moved in a vertical direction. For example, the lower body 514 may be coupled to the lifting member 560 and moved in a vertical direction by the lifting member 560. In this case, the internal space 518 of the body 510 may be selectively sealed. In the above example, the lower body 514 is coupled to the lifting member 560 and moved in a vertical direction, but the present invention is not limited thereto. For example, the upper body 512 may be coupled to the lifting member 560 and moved in a vertical direction.

[0185] The heating member 520 can heat the drying fluid (G) supplied to the internal space 518. The heating member 520 can increase the temperature of the internal space 518 of the body 510 to change the phase of the drying fluid (G) supplied to the internal space 518 into a supercritical state. In addition, the heating member 520 can increase the temperature of the internal space 518 of the body 510 to allow the drying fluid (G) supplied to the internal space 518 in a supercritical state to be maintained in the supercritical state.

[0186] Also, the heating member 520 may be embedded in the body 510. For example, the heating member 520 may be embedded in either the upper body 512 or the lower body 514. For example, the heating member 520 may be provided in the lower body 514. However, the present invention is not limited thereto, and the heating member 520 may be provided in various positions capable of increasing the temperature of the internal space 518. Also, the heating member 520 may be a heater. However, the present invention is not limited thereto, and the heating member 520 may be variously modified from a known device capable of increasing the temperature of the internal space 518.

[0187] The fluid supply unit 530 can supply a drying fluid (G) to the internal space 518 of the body 510. The drying fluid (G) supplied by the fluid supply unit 530 can include carbon dioxide (CO2). The fluid supply unit 530 can include a fluid supply source 531, a first supply line 533, a first supply valve 535, a second supply line 537, and a second supply valve 539.

[0188] The fluid supply source 531 may store and / or supply a drying fluid (G) to be supplied to the internal space 518 of the body 510. The fluid supply source 531 may supply the drying fluid (G) to a first supply line 533 and / or a second supply line 537. For example, a first supply valve 535 may be installed in the first supply line 533. Also, a second supply valve 539 may be installed in the second supply line 537. The first supply valve 535 and the second supply valve 539 may be on / off valves. The drying fluid (G) may flow selectively to the first supply line 533 or the second supply line 537 depending on whether the first supply valve 535 and the second supply valve 539 are on / off.

[0189] In the above example, the first supply line 533 and the second supply line 537 are connected to one fluid supply source 531, but the present invention is not limited to this. For example, a plurality of fluid supply sources 531 may be provided, the first supply line 533 may be connected to one of the plurality of fluid supply sources 531, and the second supply line 537 may be connected to another of the fluid supply sources 531.

[0190] Also, the first supply line 533 may be an upper supply line that supplies the drying gas to an upper portion of the internal space 518 of the body 510. For example, the first supply line 533 may supply the drying gas to the internal space 518 of the body 510 in a direction from top to bottom. For example, the first supply line 533 may be connected to the upper body 512. Also, the second supply line 537 may be a lower supply line that supplies the drying gas to a lower portion of the internal space 518 of the body 510. For example, the second supply line 537 may supply the drying gas to the internal space 518 of the body 510 in a direction from bottom to top. For example, the second supply line 537 may be connected to the lower body 514.

[0191] The fluid exhaust unit 550 can exhaust the drying fluid (G) from the internal space 518 of the body 510 .

[0192] 1 again, the substrate W processed in the single wafer processing chamber may be returned to the buffer unit 250 by the first return robot 222. The buffer unit 250 may be disposed between the first return chamber 220 and the second return chamber 260. The buffer unit 250 may be disposed between the single wafer processing chamber and the second load port unit 270.

[0193] The buffer unit 250 may provide a space for temporarily storing or storing the substrates W. For example, the buffer unit 250 may temporarily store the substrates W processed in the single-wafer liquid processing chamber 230 and / or the single-wafer drying chamber 240, which are single-wafer processing chambers. The buffer unit 250 may be a shelf in which a plurality of substrates W may be temporarily stored or stored.

[0194] The second return chamber 260 may be disposed between the buffer unit 250 and the second load port unit 270. A second return robot 262 may be provided in the second return chamber 260. The second return robot 262 may return the substrate W, which has been processed and stored in the buffer unit 250, to the transfer container F.

[0195] The hand of the second returning robot 262 may be a single-wafer hand that returns the substrates W one by one. The returning hand of the second returning robot 262 may be provided to be movable along the first direction (X), the second direction (Y), and the third direction (Z). In addition, the returning hand of the second returning robot 262 may be provided to be rotatable about the third direction (Z) as a rotation axis.

[0196] The second load port unit 270 may include at least one load port. A transfer container F capable of storing a plurality of substrates W may be placed in the load port of the second load port unit 270. For example, the transfer container F placed in the second load port unit 270 may store the substrates W which have been processed in the first process processing unit 100 and the second process processing unit 200. The transfer container F placed in the second load port unit 270 may store only the substrates W which have been processed in the first process processing unit 100 and the second process processing unit 200. That is, the second load port unit 270 may perform a function of unloading the processed substrates W from the substrate processing apparatus.

[0197] The above-mentioned second return robot 262 can carry the processed substrate W into a container F placed on a load port of the second load port unit 270. The container F can be returned to the outside of the substrate processing apparatus 10 by the above-mentioned article return device (e.g., OHT).

[0198] The controller 600 may control the substrate processing apparatus 10. For example, the controller 600 may control components of the substrate processing apparatus 10. For example, the controller 600 may control the substrate processing apparatus 10 so that the substrate processing apparatus 10 can perform a process of processing a substrate W.

[0199] For example, the controller 600 can control at least one of the first load port unit 110, the index chamber 120, the return unit 130, the batch processing unit 140, the attitude change unit 150, the buffer chamber 210, the first return chamber 220, the single wafer liquid processing chamber 230, the single wafer drying chamber 240, and the second return chamber 260, and the second load port unit 270.

[0200] The control device 600 may include a process controller implemented by a microprocessor (computer) that controls the substrate processing apparatus 10, a user interface implemented by a keyboard through which an operator inputs commands to manage the substrate processing apparatus 10 and a display that visualizes and displays the operating status of the substrate processing apparatus 10, and a storage unit that stores a control program for controlling the processing performed by the substrate processing apparatus 10 under the control of the process controller and a program for causing each component to execute processing according to various data and processing conditions, i.e., a processing recipe. The user interface and the storage unit may be connected to the process controller. The processing recipe may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

[0201] FIG. 11 is a flow chart illustrating a method of processing a substrate according to one embodiment of the present invention.

[0202] Referring to FIG. 11, a substrate processing method according to one embodiment of the present invention may include a substrate loading step (S10), a first position changing step (S20), a batch processing step (S30), a second position changing step (S40), a wetting step (S50), a single wafer processing step (S60), and a substrate unloading step (S70).

[0203] In the substrate loading step (S10), a substrate W that requires processing, i.e., an unprocessed substrate W, may be loaded into the substrate processing apparatus 10. In the substrate loading step (S10), a transfer container F may be placed in the first load port unit 110.

[0204] The substrate W stored in the transfer container F can be removed by the index robot 122 and returned to the storage container (C).

[0205] In the first position changing step (S20), the position of the substrate W can be changed from a horizontal position to a vertical position. In the first position changing step (S20), the position of the substrate W can be changed by rotating the storage container (C) about an axis in the first direction (X) by the position changing unit 124. The position changing unit 124 can have a rotation axis that can rotate the storage container (C) about an axis in the first direction (X). In the first position changing step (S20), the position of multiple substrates W can be changed at once.

[0206] The substrate W whose attitude has been changed to the vertical position can be returned to the first batch processing section 141 by the first returning unit 132 .

[0207] In the batch processing step (S30), liquid processing may be performed on a plurality of vertically oriented substrates W. In the batch processing step (S30), the substrates W may be returned to at least one batch processing tank 141-B1 to 143-B2, and liquid processing may be performed on the substrates W. The batch processing step (S30) may be performed in a manner in which the substrates W are pre-processed in the first batch processing unit 141 and post-processed in the second batch processing unit 142 or the third batch processing unit 143.

[0208] For example, the substrate W returned to the first batch processing unit 141 may be liquid-processed in the 1-1 batch processing tank 141-B1 and / or the 1-2 batch processing tank 141-B2. The substrate W liquid-processed in the 1-1 batch processing tank 141-B1 and / or the 1-2 batch processing tank 141-B2 may be returned to any one processing unit selected from the second batch processing unit 142 or the third batch processing unit 143 for processing. From the 1-1 batch processing tank 141-B1, the substrate W may be processed with a chemical such as DSP (an example of a first chemical), and from the 1-2 batch processing tank 141-B2, the substrate W may be processed with a chemical such as DHF (an example of a second chemical).

[0209] For example, when the substrate W is returned to the second batch processing unit 142, the substrate W can first be treated with a chemical containing phosphoric acid (an example of a third chemical liquid) in the 2-1 batch processing tank 142-B1, and then rinsed with a rinsing liquid containing water in the 2-2 batch processing tank 142-B2.

[0210] The rinsed substrates W can be returned to the attitude changing processing tank 151 by the second returning unit 134 .

[0211] The second position changing step (S40) may be performed by the position changing unit 150. The second position changing step (S40) may include a gripping step of gripping the substrate W and a rotating step of changing the position of the substrate W. In the second position changing step (S40), the position change of the substrates W may be performed one by one.

[0212] 12, in the gripping step of the second position changing step (S40), the hand 156-H may approach one of the substrates W supported in a vertical position by the support member 153. The hand 156-H may be moved so that the substrate W is positioned between the first guide portion 162 and the second guide portion 163. When the substrate W is positioned between the first guide portion 162 and the second guide portion 163, the chucking body 165 may move to the chucking position and grip the substrate W.

[0213] When the hand 156-H grips the substrate W, the substrate W can be moved in an upward direction so that the substrate W is released from the support grooves formed in the support member 153.

[0214] 13, in the rotation step of the second position changing step (S40), the substrate W may be moved linearly in one direction (e.g., horizontal direction) while rotating the substrate W based on one axis about which the fastening body 166 rotates, to change the position of the substrate W. That is, in the rotation step, the hand 156-H of the position changing robot 156 may be moved linearly in the horizontal direction while rotating based on one axis. In this case, the position of one end of the substrate W may be changed from a vertical position to a horizontal position while immersed in the processing liquid (L) while drawing an imaginary curve (e.g., a cut parabola). Also, the rotation of the substrate W may be performed in a direction in which one end of the substrate W moves away from the hand 156-H.

[0215] In addition, the difference between the time when the rotation of the substrate W is terminated and the time when the linear movement of the substrate W is terminated may be equal to or less than a set time. For example, the two times may be the same. That is, the rotation of the substrate W by the fastening body 166 may be terminated at the same time that the linear movement of the substrate W is terminated.

[0216] Also, the vision member 167 may not be immersed in the processing liquid (L) while the substrate W is gripped and rotated. That is, the vision member 167 may be installed at a position where it is not immersed in the processing liquid (L) flowing under the position changing processing bath 151. This can minimize the problem of the vision member 167 being damaged by the processing liquid (L).

[0217] When the posture of the substrate W is changed while immersed in the processing liquid (L), the substrate W may be damaged due to the resistance of the processing liquid (L). However, when the posture of the substrate W is changed by linear movement and rotation together while immersed in the processing liquid (L) as in the present invention, the resistance of the processing liquid (L) is prevented from being transmitted to the substrate W as much as possible. In addition, when the posture of the substrate W is changed by removing it from the processing liquid (L) (i.e., by exposing it to air), the wettability of the substrate W cannot be maintained and watermarks may be generated on the substrate W. However, the present invention changes the posture of the substrate W while immersed in the processing liquid (L), thereby minimizing such problems.

[0218] After the second position changing step (S40) is performed, a wetting step (S50) may be performed. The wetting step (S50) may be performed between the second position changing step (S40) and the single wafer processing step (S60). The wetting step (S50) may be performed by the position changing robot 156 and / or the buffer chamber 210. In the wetting step (S50), a wetting liquid may be sprayed onto the substrate W exposed to the outside after being removed from the processing liquid (L) to prevent the substrate W from drying naturally. The wetting liquid may be the same type of liquid as the processing liquid (L) flowing through the position changing processing bath 151 described above.

[0219] Also, the wetting step (S50) may include a first wetting step (S51) performed by the attitude changing robot 156 and a second wetting step (S52) performed by the buffer chamber 210.

[0220] The first wetting step (S51) may be performed by the position change robot 156. Referring to FIG. 14, when the position change of the substrate W is completed, the position change robot 156 may move the substrate W upward so as to move the substrate W out of the processing liquid (L) contained in the position change processing bath 152. When the substrate W moves out of the processing liquid (L), the liquid supply member 168 may supply the wetting liquid (WL). At this time, the wetting liquid (WL) may be supplied to a first region and a second region, which are edge regions of the substrate W, as shown in FIG. 15 and FIG. 16. The wetting liquid (WL) supplied to the edge region of the substrate W may flow along the upper surface of the substrate W to form a liquid film on the upper surface of the substrate W. If the wetting liquid (WL) flows along the edge region of the substrate W to form a liquid film in this manner, the splashing phenomenon of the wetting liquid (WL) is suppressed to the greatest extent possible, and the substrate W may be more efficiently processed.

[0221] The posture changing robot 156 can carry the substrate W, which is to be kept wetted with the wetting liquid (WL), into the buffer chamber 210.

[0222] The second wetting step (S52) may be performed by the buffer chamber 210. Referring to Fig. 17, the substrate W transferred into the buffer chamber 210 may be supported by the chuck 310. The substrate W supported by the chuck 310 may be supported and / or chucked by the support pins 314. The lift driver 360 may raise and lower the cup 340 to adjust the height of the first recovery path D1 and the height of the second recovery path D2.

[0223] Thereafter, the chuck 310 may rotate the substrate W. When the chuck 310 is rotated, the first liquid supply unit 320 may supply a first liquid (DIW, also referred to as a wetting liquid) to an upper surface of the substrate W. In addition, the second liquid supply unit 330 may supply a second liquid (IPA, also referred to as a cleaning liquid) to a lower surface of the substrate W. The first liquid (DIW) supplied to the substrate W and splashed thereon may be drained to the outside of the buffer chamber 210 through a first recovery path D1. In addition, the second liquid (IPA) may be drained to the outside of the buffer chamber 210 through a second recovery path D2.

[0224] The first liquid (DIW) may be supplied to the upper surface of the substrate W to form a liquid film on the substrate W. The second liquid (IPA) may be supplied to the lower surface of the substrate W to clean the lower surface of the substrate W. The reason for supplying the second liquid (IPA) from the buffer chamber 210 to the lower surface of the substrate W to clean the lower surface of the substrate W is to minimize contamination of the hand of the first return robot 222 that takes out the substrate W from the buffer chamber 210 and returns the substrate W to the single wafer processing chamber 230. In addition, the reason for forming a liquid film of the first liquid (DIW, wetting liquid) on the upper surface of the substrate W on which a pattern is formed is to prevent the upper surface of the substrate W from drying naturally during the process of returning the substrate W to the single wafer liquid processing chamber 230, which would result in the formation of watermarks, or the occurrence of a leaning phenomenon in the pattern formed on the substrate W.

[0225] In the second wetting step (S52), the controller 600 may control the operation of the hollow motor 316 so that the rotation speed of the chuck 310 is about 300 RPM to 500 RPM. If the rotation speed of the chuck 310 is too fast, a film of the wetting liquid cannot be properly formed on the upper surface of the substrate W. Therefore, according to an embodiment of the present invention, the rotation speed of the chuck 310 is adjusted to 300 RPM to 500 RPM. If the rotation speed of the chuck 310 is lower than 300 RPM, the first liquid supplied to the substrate W cannot be properly spread on the substrate W, and if the rotation speed of the chuck 310 is higher than 500 RPM, the first liquid is excessively scattered from the substrate W, and the first liquid cannot form a film on the substrate W.

[0226] Also, the second liquid supplied to the lower surface of the substrate W in the second wetting step (S52) may be a liquid having a higher volatility than the first liquid. In order to minimize contamination of the hand of the first return robot 222, it may be appropriate for the first return robot 222 to return the substrate W in a state in which the lower surface of the substrate W is cleaned but is as dry as possible. If the lower surface of the substrate W is cleaned using the same type of liquid as the first liquid (e.g., water), it may be difficult to properly dry the lower surface of the substrate W even if the rotation speed of the chuck 310 is increased to dry the lower surface of the substrate W, which may make it difficult to form a liquid film on the upper surface of the substrate W. In response to this, according to an embodiment of the present invention, the first liquid is supplied to the upper surface of the substrate W and the second liquid having a higher volatility is supplied to the lower surface of the substrate W, so that even if the rotation speed of the chuck 310 is the same, the upper surface of the substrate W maintains a wet state, but the lower portion of the substrate W is induced to evaporate quickly and dry.

[0227] In addition, as shown in FIG. 18, the supply of the first liquid and the second liquid can start at the same time, or as shown in FIG. 19, the supply of the first liquid can be started from the first liquid supply unit 320, and after a set time has elapsed, the supply of the second liquid can be started from the second liquid supply unit 330.

[0228] In addition, the controller 600 can control the buffer chamber 210, the single-wafer liquid processing chamber 230, and the single-wafer drying chamber 240 so that the processing time of the substrate W in the buffer chamber 210 is shorter than the processing time of the substrate W in the single-wafer liquid processing chamber 230 and / or the single-wafer drying chamber 240.

[0229] For example, the processing time of the substrate W in the buffer chamber 210 may be about 8 to 12 seconds, and the processing time of the substrate W in the single-wafer liquid processing chamber 230 may be about 60 to 70 seconds.

[0230] The single-wafer processing step (S60) may be performed on a single horizontally oriented substrate W. The single-wafer processing step (S60) may include a liquid processing step (S61) and a drying step (S62).

[0231] The liquid treatment step (S61) may be performed on the single-wafer liquid treatment chamber 230 when the substrate W temporarily stored in the buffer chamber 210 is returned to the single-wafer liquid treatment chamber 230. In the liquid treatment step (S40), an organic solvent such as IPA may be supplied onto the substrate W.

[0232] The drying step (S62) may dry the substrate W in a single wafer manner. The drying step (S62) may be performed in the drying chamber 240 if the substrate W that has been liquid-treated in the liquid treating step (S61) is returned to the drying chamber 240. In the drying step (S50), a processing fluid in a supercritical state (e.g., carbon dioxide in a supercritical state) may be supplied onto the substrate W to remove organic solvents, wetting liquids, processing liquids (L), etc. remaining on the substrate.

[0233] In some cases, the drying step (S50) may not be performed in the drying chamber 240, but may be performed by drying the substrate W by rotating the substrate W at a high speed in the single-wafer liquid processing chamber 230 (so-called spin drying).

[0234] In the substrate unloading step (S70) performed after the single wafer processing step (S60), the substrate W on which the single wafer processing step (S60) has been performed is returned to the buffer unit 250, and then can be returned to a transfer container F placed in the second load port unit 270 by a second return robot 262 of the second return chamber 260, and the transfer container F placed in the second load port unit 270 can be grasped by a return device such as an OHT to unload it from the substrate processing apparatus 10.

[0235] In addition, the substrate W may be returned from the buffer chamber 210 to the single wafer liquid processing chamber 230 by the third hand 222C-C1 of the hands of the first return robot 222. In addition, the substrate W may be returned from the single wafer liquid processing chamber 230 to the single wafer drying chamber 240 by the second hand 222C-B1 of the hands of the first return robot 222. In addition, the substrate W may be returned to the buffer unit 250 in the single wafer drying chamber 240 by the first hand 222C-A1. The hands of the first return robot 222 are installed at different heights, and the cleanliness may differ depending on the installed height. For example, a hand installed at a relatively high position may have excellent cleanliness. In accordance with the present invention, the substrate W that has completed processing in the single wafer drying chamber 240 is returned by the first hand 222C-A1, the substrate W that has undergone liquid processing in the single wafer liquid processing chamber 230 is returned by the second hand 222C-B1, and the substrate W before liquid processing in the single wafer liquid processing chamber 230 is returned by the third hand 222C-C1, thereby maintaining the cleanliness of the substrate W.

[0236] As described above, the substrate processing apparatus 10 according to an embodiment of the present invention may include both the batch processing unit 140 and the single wafer liquid processing chamber 230. This provides all the advantages of both the batch and single wafer liquid processing methods.

[0237] For example, the batch processing unit 140 can process a plurality of substrates W at once, so that mass productivity of the substrate W processing is excellent, and the processing uniformity between the substrates W is very high. In addition, when the pattern formed on the substrate W has a high aspect ratio, the single-wafer liquid processing chamber 230 can supply chemicals, rinse liquids, etc. to compensate for the portion that has not yet been processed (e.g., the portion that has not yet been etched) in the batch processing unit 140. In addition, the substrate (W, for example, a wafer) wetted with the organic solvent supplied in the single-wafer liquid processing chamber 230 or the buffer chamber 210 can be returned to the drying chamber 240, which supplies a supercritical fluid to dry the substrate W. The supercritical fluid has a high penetrating power into the space between the patterns formed on the substrate W, so that the substrate W can be dried without rotating the substrate W, thereby minimizing the occurrence of the above-mentioned pattern-rinsing phenomenon. In addition, the substrate processing apparatus 10 of the present invention can perform all of the single-wafer liquid processing method, the batch-type liquid processing method, and the method of drying the substrate W using a supercritical fluid, and can improve defects due to particles, falling and flow. In addition, since the number of substrates W that can be processed in the batch-type processing unit 140 is relatively large, a large number of liquid processing chambers are not required, which is advantageous in that the footprint of the substrate processing apparatus 10 can be reduced. In addition, by further providing the single-wafer liquid processing chamber 230 as described above, the problem of abnormal growth of SiO2 on the pattern on the substrate W that may occur when processing the substrate W using only the batch-type processing unit 140 can be eliminated.

[0238] Also, when the substrate processing apparatus 10 according to the embodiment of the present invention is equipped with both the batch processing unit 140 and the single wafer liquid processing chamber 230, it is necessary to change the attitude of the substrate W from a vertical attitude to a horizontal attitude. For this reason, the substrate processing apparatus 10 according to the embodiment of the present invention is equipped with an attitude changing robot 156 to change the attitude of the substrate W from a vertical attitude to a horizontal attitude. At this time, the attitude of the substrate W is changed while the substrate W is immersed in the processing liquid (L) so that the wettability of the substrate W can be maximized (otherwise, the substrate W may dry out and cause watermarks).

[0239] In the above example, the liquid supply member 168 is installed in the support body 161, but the present invention is not limited thereto. For example, as shown in FIG. 20, the liquid supply member 169 may be installed in the fastening body 166. The liquid supply member 169 may be a supply pipe in which a first nozzle 169a, a second nozzle 168b, and a third nozzle 168c are formed. The first nozzle 169a, the second nozzle 168b, and the third nozzle 168c may spray the wetting liquid (WL) toward the substrate W in a downwardly inclined direction. At least one of the first nozzle 169a, the second nozzle 168b, and the third nozzle 168c may be formed. For example, a plurality of the first nozzle 169a, the second nozzle 168b, and the third nozzle 168c may be formed. The first nozzles 169a may be disposed between the second nozzles 169b, and the second nozzles 169b may be disposed between the third nozzles 169c. The first nozzles 169a may be disposed relatively inward, and the third nozzles 169c may be disposed relatively outward. Also, as shown in FIG. 21, the diameters of the injection holes of the first nozzle 169a, the second nozzle 168b, and the third nozzle 168c may be different from each other. The diameter of the injection hole of the first nozzle 169a may be larger than that of the second nozzle 168b, and the diameter of the injection hole of the second nozzle 169b may be larger than that of the third nozzle 168c. Also, the supply flow rate of the wetting liquid (WL) per unit time delivered to the first nozzle 169a, the second nozzle 168b, and the third nozzle 168c may be the same. In this regard, the spray distance of the wetting liquid (WL) supplied from the first nozzle 169a, the second nozzle 168b, and the third nozzle 168c may be the shortest for the first nozzle 169a and the longest for the third nozzle 169c. In addition, the first nozzle 169a, the second nozzle 168b, and the third nozzle 168c may supply the wetting liquid (WL) to the edge region of the substrate W.

[0240] In the above example, the posture change robot 156 supplies the wetting liquid (WL) to the edge region of the substrate W, but the present invention is not limited to this. For example, as shown in Fig. 22, the liquid supply member 177 may be fastened to the third arm 175. The liquid supply member 177 may be provided rotatably about a rotation axis parallel to the direction in which the fourth arm 176 rotates, and may be configured to supply the wetting liquid (WL) to the central region of the substrate W placed on the hand 156-H.

[0241] In the above example, the buffer chamber 210 and the single wafer liquid processing chamber 230 have different liquid processing structures, but the present invention is not limited thereto. For example, the single wafer liquid processing chamber 230 may have the same liquid processing structure as the buffer chamber 210.

[0242] In the above example, the first liquid supply unit 320 of the buffer chamber 210 supplies water to the upper surface of the substrate W, but the present invention is not limited to this. For example, the first liquid supply unit 320 of the buffer chamber 210 may be configured to supply IPA in the same manner as the second liquid supply unit 330. In this case, when all liquid processing for the substrate W has been performed in the single-wafer liquid processing chamber 230, IPA may be supplied to the upper surface of the substrate W in the buffer chamber 210, and the substrate W may be immediately returned from the buffer chamber 210 to the single-wafer drying chamber 240.

[0243] 23 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present invention viewed from above. Referring to FIG. 23, the substrate processing apparatus 10A may include a loading / unloading unit T2, a single wafer processing unit T3, an interface unit T5, and a batch processing unit T6. The loading / unloading unit T2 has a loading platform T22 for loading containers F. The loading / unloading unit T2, the single wafer processing unit T3, the interface unit T5, and the batch processing unit T6 may be arranged in a row along a first direction (TX).

[0244] The loading / unloading section T2 has a first return area T23, which may be adjacent to the loading table T22. The first return device T24 can return the substrate W between the container F and the first buffer section T26.

[0245] The single wafer processing unit T3 has a second return area T31, which may be in contact with the first buffer unit T26. A second return device T32 may be installed in the second return area T31. The second return device T32 may transport the substrate TW from the first buffer unit T26 and into the second buffer unit T33. A single wafer liquid processing chamber T34 may be disposed on one side of the first return device T32, and a single wafer drying chamber T35 may be disposed on the other side.

[0246] The interface unit T5 may have a lot forming unit T51, a return unit T52, and a buffer chamber 210A. The buffer chamber 210A may have the same structure as the above-mentioned buffer chamber 210. The return unit T52 may return the substrate (TW) returned to the second buffer unit T33 to the lot forming unit T51, and may return the substrate (TW) processed in the batch processing unit T6 to the single wafer liquid processing chamber T34 of the single wafer processing unit T3.

[0247] The batch processing section T6 has a third return area T61, which is adjacent to the interface section T5. A third return device T62 is provided in the third return area T61, and can return the substrate (TW) between devices adjacent to the third return area T61. The third return device can return multiple substrates at once.

[0248] Adjacent to the batch type processing unit T6 may be a first chemical liquid tank T63, a first rinsing liquid tank T64, a second chemical liquid tank T65, a second rinsing liquid tank T66, a third chemical liquid tank T67, and a third rinsing liquid tank T68.

[0249] In the first chemical bath T63, DHF (dilute hydrofluoric acid) or BHF (a mixture of hydrofluoric acid and ammonium fluoride) can be used to remove native oxide films. In the first rinsing bath T64, deionized water can be used to process substrates TW. In the second chemical bath T65, an aqueous phosphoric acid solution can be used to selectively etch silicon nitride film out of silicon oxide film and silicon nitride film. In the second rinsing bath T66, deionized water can be used to process substrates TW. In the third chemical bath T67, SC1 (a mixture of ammonia, hydrogen peroxide, and water) can be used to process substrates TW, and in the third rinsing bath T68, deionized water can be used to process substrates TW.

[0250] The batch type processor T6 may include a first support member T71 and a first driving member T72, a second support member T73 and a second driving member T74, a third support member T75 and a third driving member T763, a fourth support member T811, and a fourth driving member T818, which return and support the substrate TW. A fifth support member T814 may be installed in the third rinsing liquid bath T68.

[0251] The substrate TW immersed in the third rinsing liquid bath T68 of the batch processing unit T6 may be removed by the return unit T52 and transferred to the buffer chamber 210A. In the buffer chamber 210A, a first liquid (water) may be supplied to an upper surface of the substrate TW, and a second liquid (IPA) may be supplied to a lower surface of the substrate TW. The return unit T52 may have the same or similar structure as the first return robot T222 described above.

[0252] 24 is a top view of a substrate processing apparatus according to another embodiment of the present invention. Referring to FIG. 24, the substrate processing apparatus (T10B) according to another embodiment of the present invention is different from the embodiment of FIG. 23 in that an input part T2A into which the substrate TW is input and an output part T2B from which the substrate TW is output are separated. The unprocessed substrate TW input to the input part T2A is returned to the lot (L) by a return mechanism T57 of the additional interface part T5, and after being processed in the batch processing part T6A, it can be input to the buffer chamber 210B by a return robot T58. The buffer chamber 210B can have the same or similar structure as the buffer chambers 210 and 210A described above.

[0253] Fig. 25 is a top view of a substrate processing apparatus according to another embodiment of the present invention. Referring to Fig. 25, the substrate processing apparatus T10C according to another embodiment of the present invention is different from the embodiment of Fig. 24 in that a plurality of buffer chambers 210C1 and 210C2 are provided. The substrate TW discharged from the batch processing unit T6 by the return robot T58 is returned to the first buffer chamber 210C1, and then can be transferred to the second buffer chamber 210C2 by the transfer rail T592 and the transfer hand T594. The substrate TW transferred to the second buffer chamber 210C2 can be transferred to the single wafer liquid processing chamber T34 by the transfer robot T68.

[0254] In the above example, the supply of the first liquid and the second liquid is started at the same time as shown in FIG. 18, or the supply of the first liquid is started and the supply of the second liquid is started after a set time has elapsed as shown in FIG. 19, but the present invention is not limited thereto. For example, the supply of the first liquid and the second liquid is started at the same time as shown in FIG. 26, but the supply of the second liquid may end earlier than the supply of the first liquid. Since the second liquid, which may be IPA, is sufficient to clean and dry the lower surface of the substrate W, the problem of the second liquid being wasted can be minimized by making the supply of the second liquid end earlier. Also, as shown in FIG. 27, the start of the supply of the second liquid may be delayed from the start of the supply of the first liquid, and the end of the supply of the second liquid may be earlier than the end of the supply of the first liquid. Similarly, since the second liquid, which may be IPA, is sufficient to clean the underside of the substrate W and then dry it, the problem of the second liquid being wasted can be minimized by making the end of the supply of the second liquid earlier and the start of the supply of the first liquid later.

[0255] The upper surface of the substrate W may be a patterned surface on which a pattern is formed and may be referred to as a first surface, and the lower surface of the substrate W may be a non-patterned surface on which no pattern is formed and may be referred to as a second surface.

[0256] The above detailed description is illustrative of the present invention. The above description is intended to illustrate preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations are possible within the scope of the inventive concept disclosed herein, within the scope of equivalents to the disclosed contents, and / or within the scope of the technology or knowledge of the art. The described embodiments are intended to illustrate the best conditions for embodying the technical ideas of the present invention, and various modifications are possible as required by specific application fields and uses of the present invention. Therefore, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. The appended claims should be construed to include other embodiments. [Explanation of symbols]

[0257] W substrate F Transfer container C. Storage container 10 Substrate processing equipment 100 First process processing section 110 No. 1 Load Port Unit 120 Index Chamber 122 Index Return Robot 124 Attitude Change Unit 130 Return Unit 132 First return unit 134 Second return unit 140 Batch Processing Unit 141 First batch processing section 141-B1 No. 1-1 batch processing tank 141-B1-1 Treatment tank 141-B1-2 Containment Space 141-B1-3 Heating material 141-B1-4 Supply Line 141-B1-5 Collection Line 141-B1-6 Support member 141-B2 1st and 2nd batch processing tank 141-TR 1st Placement Return Unit 142 Second batch processing section 142-B1 No. 2-1 batch processing tank 142-B2 No. 2-2 batch processing tank 142-TR 2nd Placement Return Unit 143 3rd batch processing section 143-B1 No. 3-1 batch processing tank 143-B2 No. 3-2 batch processing tank 143-TR 3rd Placement Return Unit 150 Posture change section 151 Posture change processing tank 152 Treatment tank A, B Storage space A Rotating Space B Support space 153 Support member 154 Supply Line 155 Collection Line 156 Posture-changing robot 156-H Hand 156-R Arm 200 Second process processing section 210 Buffer Chamber 220 First return chamber 222 First Return Robot 222A Rail running part 222B Hand drive unit 222B1 Drive box 222B2 Drive shaft 222C Hand part 222C-A1 1st Hand 222C-A2 1st hand moving body 222C-B1 2nd hand 222C-B2 2nd hand moving body 222C-C1 3rd hand 222C-C1 3rd hand moving body 222C-D Sliding Fuselage 222C-D1 First sliding groove 222C-D2 Second sliding groove 223 Return Rail 230 Single-wafer Liquid Processing Chamber 240 Single-wafer drying chamber 250 Buffer section 260 Second Return Chamber 262 Second Return Robot 270 No. 2 Load Port Unit 210 Buffer Chamber 310 Chuck 312 Chuck Body 314 Support pin 315 Rotating Shaft 316 Hollow Motor 320 1st liquid supply section 322 No. 1 nozzle 324 1st liquid supply source 330 2nd liquid supply section 332 No. 2 nozzle 333 Second liquid supply line 334 Second liquid supply source 335 Cover 336 Liquid supply shaft 337 Bearing 340 Cup 341 First Cup 341a First drain space 341b Second drain space 341c Third drain space 342 2nd Cup 343 3rd Cup 350 Drain line 351 First Drain Line 352 Second drain line 353 3rd Drain Line 360 Lifting drive 361 First lift drive 362 Second lift drive 363 3rd lift drive D1 First Recovery Route D2 Second Recovery Route D3 3rd Recovery Route 600 Controller

Claims

1. In an apparatus for processing a substrate: a batch processing tank for processing substrates in a batch manner; a single wafer processing chamber for processing the substrates in a single wafer manner; and a buffer chamber arranged on a return path of the substrate returned between the batch processing tank and the single wafer processing chamber, the buffer chamber supplying liquid so that the substrate can be maintained in a wet state; The buffer chamber comprises: a chuck for supporting and rotating the substrate; and a liquid supply unit that supplies the liquid to the substrate that is supported and rotated by the chuck; Substrate processing equipment.

2. The liquid supply comprises: a first liquid supplying unit configured to supply a first liquid to an upper surface of the substrate supported by the chuck; and The substrate processing apparatus of claim 1 , further comprising a second liquid supplying section configured to supply a second liquid to an underside of the substrate supported by the chuck.

3. The substrate processing apparatus according to claim 2 , wherein the second liquid supply unit is configured to supply the second liquid, which is a type of liquid having a higher volatility than the first liquid supplied by the first liquid supply unit.

4. The substrate processing apparatus of claim 3 , wherein the second liquid supply unit is configured to supply the second liquid, the second liquid being isopropyl alcohol (IPA).

5. The substrate processing apparatus of claim 4 , wherein the first liquid supply unit is configured to supply the first liquid, which is water.

6. The device comprises: and a controller configured to control the buffer chamber.

6. The substrate processing apparatus of claim 3, wherein the controller controls the buffer chamber so that the rotation speed of the chuck is between 300 RPM and 500 RPM while the liquid supply unit supplies the liquid.

7. The device comprises: a controller configured to control the buffer chamber and the single wafer processing chamber; 6. The substrate processing apparatus according to claim 3, wherein the controller controls the buffer chamber and the single wafer processing chamber so that a processing time of the substrate in the buffer chamber is shorter than a processing time of the substrate in the single wafer processing chamber.

8. The device comprises: The batch processing tank further includes a position-changing processing tank disposed between the batch processing tank and the buffer chamber, 6. The substrate processing apparatus of claim 1, wherein the liquid flowing through the bottom of the attitude-changing processing tank is the same type of liquid as the liquid supplied by the liquid supply unit.

9. The single wafer processing chamber comprises: a single-wafer liquid processing chamber for supplying a processing liquid to the substrate to process the substrate; and a single-wafer drying chamber for drying the substrate; The device comprises:

6. The substrate processing apparatus according to claim 1, further comprising a return robot that returns the substrate among the single-wafer liquid processing chamber, the single-wafer drying chamber, and the buffer chamber.

10. The return robot is The first hand, A second hand installed at a height lower than that of the first hand; and The substrate processing apparatus according to claim 9 , further comprising a third hand installed at a height lower than that of the second hand.

11. The device comprises: Further comprising a controller configured to control the return robot; 11. The substrate processing apparatus of claim 10, wherein the controller controls the return robot to use the first hand when returning the substrate that has been dried in the single-wafer drying chamber, to use the third hand when returning the substrate in a wet state in the buffer chamber, and to use the second hand when returning the substrate from the single-wafer liquid processing chamber to the single-wafer drying chamber.

12. The device comprises: and a controller configured to control the buffer chamber.

6. The substrate processing apparatus of claim 3, wherein the controller controls the buffer chamber so that the second liquid supply unit starts supplying the second liquid after a set time has elapsed since the first liquid supply unit started supplying the first liquid.

13. In the buffer chamber, a chuck for supporting and rotating the substrate; a first liquid supplying unit configured to supply a first liquid to a first surface of the substrate supported by the chuck; and a buffer chamber including a second liquid supplying portion configured to supply a second liquid, the second liquid being more volatile than the first liquid, to a second surface of the substrate supported by the chuck, the second surface being a surface different from the first surface.

14. 14. The buffer chamber of claim 13, wherein the chuck is controlled by a control unit to rotate at a speed between 300 RPM and 500 RPM.

15. The chamber comprises: a processing cup for collecting the first liquid and the second liquid; and a lifting drive for lifting and lowering the processing cup; The processing cup is configured with a plurality of cups and defines at least two or more collection paths for collecting different types of liquids from each other; 14. The buffer chamber of claim 13, wherein the lift driver is configured to lift the processing cup, and to recover the first liquid through one of the collection paths and the second liquid through the other of the collection paths.

16. In an apparatus for processing a substrate, a first process processing section for processing substrates in a batch manner; A second process processing unit that processes the substrate in a single-wafer manner; and A controller is included. The first process processing unit includes: a batch processing tank for processing the substrates in a vertical position; a position-changing processing tank for changing the substrate from a vertical position to a horizontal position, the position-changing processing tank having a storage space for storing a liquid, and a support member for supporting the substrate in a vertical position disposed in the storage space; and a posture changing robot that changes the posture of the substrate from the vertical posture to a horizontal posture, the posture changing robot having a hand and an arm that moves the hand; The second process processing unit includes: a single-wafer liquid processing chamber for supplying a processing liquid to the substrate being rotated to perform liquid processing on the substrate; a single-wafer drying chamber for supplying a supercritical fluid to the substrate to dry the substrate; a buffer chamber for supplying liquid to the substrate to maintain the substrate in a wetted state; and a return robot that returns the substrate between the buffer chamber, the single-wafer liquid processing chamber, and the single-wafer drying chamber; The buffer chamber comprises: The posture changing robot is disposed at a position where it can receive the substrate carried out from the posture changing treatment tank. Substrate processing equipment.

17. The buffer chamber comprises: a chuck for supporting and rotating the substrate; a first liquid supplying unit configured to supply a first liquid to an upper surface of the substrate supported by the chuck; and The substrate processing apparatus of claim 16 , further comprising a second liquid supplying section configured to supply a second liquid, the second liquid being more volatile than the first liquid, to an underside of the substrate supported by the chuck.

18. The device comprises: A plurality of the single-wafer liquid processing chambers are stacked on top of each other, 17. The substrate processing apparatus of claim 16, wherein the buffer chamber is installed at a higher position than the single-wafer liquid processing chamber installed at the bottom among the plurality of single-wafer liquid processing chambers and at a lower position than the single-wafer liquid processing chamber installed at the top among the plurality of single-wafer liquid processing chambers.

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