Semiconductor Device

Abstract

To provide a new display device.SOLUTION: A transistor includes a first gate electrode layer, a first insulating layer on the first gate electrode layer, an oxide semiconductor layer on the first insulating layer, a source electrode and a drain electrode on the oxide semiconductor layer, a second insulating layer on the source electrode, the drain electrode, and the oxide semiconductor layer, and a second gate electrode on the second insulating layer. A capacitive element includes a first electrode, a second electrode, and an insulating layer arranged on a same layer as the second insulating layer. The first electrode includes a conductive layer arranged on the same layer as the second gate electrode. The second electrode includes an oxide semiconductor layer arranged on the same layer as the oxide semiconductor layer. The capacitive element includes a third electrode which is electrically connected to first wiring arranged on the same layer as the first gate electrode via an insulating layer arranged on the same layer as the first insulating layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a semiconductor device. and electronic devices. [Background technology]

[0002] A transistor (field-effect transistor) is made using a semiconductor layer formed on a substrate with an insulating surface. The technology that makes up the field-effect transistor (FET) or thin-film transistor (TFT) is attracting attention. The transistor is used in power devices such as integrated circuits (ICs) and image display devices (display devices). Silicon is widely used as a semiconductor layer for transistors. Representative semiconductor materials are widely known, but oxide semiconductors are also used as other materials. Technology is in the spotlight.

[0003] For example, amorphous oxides containing In, Zn, Ga, Sn, etc. are used as oxide semiconductors. A technique for fabricating a transistor using self-aligned transistors has been disclosed (see Patent Document 1). A technique for manufacturing a transistor having a top gate structure using an oxide semiconductor layer is disclosed. (See Patent Document 2.) In order to increase the field effect mobility, the electric field of the upper and lower gate electrodes is By using the above-mentioned method, a transistor having a structure in which the oxide semiconductor layer in which the channel is formed is electrically surrounded is fabricated. A technique for doing this has been disclosed (see Patent Document 3).

[0004] In addition, a base insulating layer of the oxide semiconductor layer in which a channel is formed is heated to release oxygen. By using an insulating layer to reduce oxygen vacancies in the oxide semiconductor layer, the threshold voltage during long-term use can be reduced. A technology to create transistors with improved electrical reliability, such as small voltage shifts has been disclosed (see Patent Document 4). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2006-165529 A [Patent Document 2] JP 2009-278115 A [Patent Document 3] JP 2014-241404 A [Patent Document 4] JP 2012-009836 A Summary of the Invention [Problem to be solved by the invention]

[0006] A transistor including an oxide semiconductor layer is expected to be applied to a display device. The capacitive element that constitutes the pixel circuit of the device has a large electrostatic capacitance (hereinafter referred to as capacitance) in a small area. If the capacitance for holding the data voltage becomes smaller, the charge injection Charge Injection, Feedthrough This is to avoid the problem of the influence of

[0007] In order to obtain a large capacitance in a small area, a thin gate insulating film is sandwiched between the gate electrode and the semiconductor layer. The capacitor element that forms the capacitance is called MOS (Metal-Oxide-Semiconductor). uctor) capacitance (or MIS (Metal-Isulator-Semicon However, MOS capacitors can only hold low voltages near 0V. When the pixel is held in a pixel, the capacitance is small, making it difficult to hold the data voltage for low gradations.

[0008] One aspect of the present invention is a novel configuration that can obtain a large capacity even with a small area. Another object of the present invention is to provide a display device or the like that can maintain a low voltage. A display with a new configuration that can obtain a large capacity even when performing gradation display by holding the display One of the objectives is to provide an apparatus, etc.

[0009] Note that the problems of one embodiment of the present invention are not limited to the problems listed above. However, this does not preclude the existence of other problems. The other problems are described below. Problems not mentioned in this section are problems that a person skilled in the art would be able to solve by reading the specification or can be derived from drawings and other descriptions, and can be appropriately extracted from these descriptions. In addition, one aspect of the present invention is to achieve at least one of the above-listed and / or other objects. This is to solve one problem. [Means for solving the problem]

[0010] One embodiment of the present invention is a semiconductor device including a first wiring, a first transistor, a first capacitor, and a light-emitting element. The first wiring functions as a current supply line for supplying a current to the light emitting element. The first transistor has a first gate electrode and a first insulating film on the first gate electrode. an insulating layer, an oxide semiconductor layer on the first insulating layer, and a source electrode and a drain electrode on the oxide semiconductor layer; a source electrode, a drain electrode, and a second insulating layer on the oxide semiconductor layer; and a second gate electrode on the second insulating layer. The first capacitance element has a first electrode and a second an insulating layer provided on the same layer as the second insulating layer between the first electrode and the second electrode; , the first electrode has a conductive layer provided in the same layer as the second gate electrode, and the second The electrode includes an oxide semiconductor layer provided in the same layer as the oxide semiconductor layer, and the first capacitor includes , electrically connected to the first wiring via an insulating layer provided in the same layer as the first insulating layer. A display device having a third electrode layer, the third electrode layer being provided in the same layer as the first gate electrode. It is.

[0011] In one embodiment of the present invention, the second gate electrode and the first electrode are made of oxygen, In, and Z. A display device having n and M, where M is Al, Ga, Y, or Sn, is preferred.

[0012] In one embodiment of the present invention, the second gate electrode and the first electrode are made of an oxide semiconductor and A display device having a higher carrier density than the second electrode is preferred.

[0013] In one embodiment of the present invention, the thickness of the second insulating layer is greater than the thickness of the first insulating layer. The device is preferred.

[0014] In one embodiment of the present invention, the pixel includes a second transistor, a second capacitor, and a liquid crystal element. The liquid crystal element has a reflective electrode having an opening, and the light emitting region of the light emitting element is A display device having an area that overlaps with the area in which the aperture is provided is preferred.

[0015] Other aspects of the present invention will be described in the following embodiments and As shown in the drawings. Effect of the Invention

[0016] One aspect of the present invention is a novel configuration that can obtain a large capacity even with a small area. Alternatively, one embodiment of the present invention can provide a display device or the like that maintains a low voltage and A display device having a novel configuration that can obtain a large capacity even when performing a scaled display is provided. can be provided. [Brief description of the drawings]

[0017] [Figure 1] 1A and 1B are a circuit diagram and a timing chart illustrating a display device of one embodiment of the present invention. [Diagram 2] 1A and 1B are cross-sectional views and graphs illustrating a display device of one embodiment of the present invention. [Diagram 3] 1A and 1B are a top view and a cross-sectional view illustrating a display device of one embodiment of the present invention. [Figure 4] 1A and 1B are a cross-sectional view and a circuit diagram illustrating a display device of one embodiment of the present invention. [Diagram 5] FIG. 1 is a circuit diagram illustrating a display device of one embodiment of the present invention. [Figure 6] FIG. 1 is a circuit diagram illustrating a display device of one embodiment of the present invention. [Figure 7] FIG. 1 is a top view illustrating a display device according to one embodiment of the present invention. [Figure 8] 1A and 1B are schematic diagrams illustrating a display device according to one embodiment of the present invention. [Figure 9] FIG. 1 is a cross-sectional view illustrating a display device according to one embodiment of the present invention. [Figure 10] FIG. 1 is a circuit diagram illustrating a display device of one embodiment of the present invention. [Figure 11] FIG. 1 is a circuit diagram illustrating a display device of one embodiment of the present invention. [Figure 12] 1A and 1B are a circuit diagram and a cross-sectional schematic diagram illustrating a display device of one embodiment of the present invention. [Figure 13] 1 shows a configuration example of a display device according to an embodiment. [Figure 14] 1 shows a configuration example of a display device according to an embodiment. [Figure 15] 1 shows a configuration example of a display device according to an embodiment. [Figure 16] 3 shows a configuration example of a touch panel according to an embodiment. [Figure 17] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 18]1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 19] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 20] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 21] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 22] 1 is an electronic device according to an embodiment. [Diagram 23] 1 is an electronic device according to an embodiment. [Figure 24] 1 is an electronic device according to an embodiment. [Diagram 25] 1 is an electronic device according to an embodiment. [Figure 26] 1 is an electronic device according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0019] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatching pattern is the same and no particular symbol is attached. .

[0020] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0021] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0022] A transistor is a type of semiconductor device that controls the amplification of current or voltage and the conduction or non-conduction of electricity. In this specification, the transistor can realize a switching operation that controls the , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT: Thin Film Transistor ).

[0023] In addition, the functions of "source" and "drain" may differ when using transistors with different polarities. In some cases, such as when the direction of the current changes during circuit operation, the two may be interchanged. Therefore, in this specification, the terms "source" and "drain" may be used interchangeably. It is possible.

[0024] (Embodiment 1) In this embodiment, a structure example of a display device according to one embodiment of the present invention will be described.

[0025] [Example of circuit diagram] FIG. 1A is a circuit diagram of a pixel included in a display device.

[0026] The pixel PIX includes a transistor M1, a transistor M2, a transistor M3, and a capacitor The pixel PIX includes a scanning line GL, a signal line SL, a current The pixel PIX is connected to the supply line ANODE, the wiring V0, and the common wiring CATHODE. The transistors M1, M2 and M3 correspond to sub-pixels of a pixel that performs color display. Although the following description will be given assuming that the transistor is an n-channel type, it may be a p-channel type. stomach.

[0027] The scanning line GL is a wiring that supplies a scanning signal to the pixel. The signal line SL is a signal that controls the conductive state of the pixel. The current supply line ANODE and the common line CATHODE are the wiring that supplies the light to the light-emitting elements. This is a wiring for passing a current to the child EL. The wiring V0 is a wiring to which a constant voltage is applied.

[0028] The capacitance element MC is composed of a transistor with gate electrodes provided above and below an oxide semiconductor layer. The capacitor element MC is made of a metal material located below the oxide semiconductor layer. The gate electrode formed on the oxide semiconductor layer is called a first gate electrode (also called a bottom gate electrode). The gate electrode made of a metal oxide material on the upper side of the first gate electrode (top gate Metal oxide materials are materials that contain metal elements and oxygen. do.

[0029] The capacitance element MC includes a second gate electrode, an insulating layer provided in contact with the second electrode, and an oxide The first electrode of the capacitance element MC is a semiconductor layer. The gate electrode of the second capacitor element MC is connected to the gate electrode of the transistor M3. The source and drain electrodes are connected to the source electrode of the transistor M3. The first gate electrode is connected to the current supply line ANODE, in other words, the source of the transistor M3. The input terminal of the power supply 14 is connected to the other of the source or drain.

[0030] The transistors M1, M2, and M3 are single-gate transistors. However, like the capacitor element MC, the upper and lower portions of the oxide semiconductor layer The transistor may have a structure in which a gate electrode is provided on the capacitance element MC. An example of a configuration applicable to the modules M1, M2, and M3 will be described later.

[0031] The gate electrode of the transistor M1 is connected to the scan line GL. Either the source or the drain of the transistor M1 is connected to the signal line SL. The other drain is connected to the gate electrode of the transistor M3 and one electrode of the capacitance element MC. is connected to.

[0032] The gate electrode of the transistor M2 is connected to the scanning line GL. Either the source or the drain of the transistor M2 is connected to the wiring V0. The other of the drains is one of the source or drain of the transistor M3 and the other of the capacitance element MC. and one electrode of the light-emitting element EL.

[0033] The gate electrode of the transistor M3 is connected to the other of the source or drain of the transistor M1. and one electrode of the capacitance element MC. One of the terminals is connected to the other of the source or drain of the transistor M2 and the other terminal of the capacitance element MC. The source or drain of the transistor M3 is connected to one electrode of the light-emitting element EL. The other end of the drain is connected to a current supply line ANODE.

[0034] One electrode of the light-emitting element EL is connected to the other of the source or drain of the transistor M2. The transistor M3 is connected to the source or drain of the transistor M3 and the other electrode of the capacitance element MC. The other electrode of the light-emitting element EL is connected to a common wiring CATHODE.

[0035] FIG. 1B shows a timing chart for explaining a simple operation of FIG. 1A. In Figure 1(B), the mth scanning line GL_m is selected during one scanning period (P SCAN )of The voltage V V applied to the current supply line ANODE is also shown. ANODE and the power supply of the wiring V0 13, and the image signal on the signal line SL.

[0036] As shown in FIG. 1B, in one scanning selection period, the image signal of the signal line SL is (m-1). The signal DATA_m-1 in the th row is switched to the signal DATA_m in the mth row. During this time, the current Voltage V applied to the supply line ANODE ANODE In order to pass current through the light-emitting element EL, the wiring V The voltage is higher than the voltage of O.

[0037] In the configurations shown in Figures 1(A) and (B), the first gate electrode is formed of a conductive layer made of a metal material. The second gate electrode can be formed of a conductive layer made of a metal oxide material. The conductive layer made of the conductive material can supply oxygen to the insulating layer on which the film is formed during the film formation. The insulating layer to which the oxygen is supplied can be released to the semiconductor layer having an oxide semiconductor by heating. Therefore, a conductive layer made of a metal oxide material can be used for the second gate electrode. This improves the reliability of the transistors M1, M2, and M3.

[0038] In the configurations of FIGS. 1(A) and 1(B), as described above, the reliability of the transistors M1, M2, and M3 is By reducing oxygen vacancies in a semiconductor layer having an oxide semiconductor, the threshold voltage shift can be reduced. On the other hand, when the transistor functions as a MOS capacitor, In addition, if the threshold voltage of the transistor is close to 0V, the capacitance is small when maintaining a low voltage. , it becomes difficult to hold the low gradation data voltage.

[0039] FIG. 2A shows a circuit diagram of a first transistor that functions as a MOS capacitor. The voltages of the gate electrode, the second gate electrode, the electrodes functioning as the source and the drain are respectively These are represented as "Vb", "Vg" and "Vs", respectively. FIG. 2(B) shows the second gate electrode The horizontal axis represents the voltage between the gate and source electrodes (Vg-Vs), and the horizontal axis represents the capacitance element MC The vertical axis indicates the capacity of the battery.

[0040] As shown in FIG. 2B, a transistor with a threshold voltage of about 0V is called M In the case of an OS capacitance, Vb applied to the first gate electrode and Vb applied to the source electrode are at the same potential. In the case of Vb-Vs=0, when a low voltage is applied to the second gate electrode, the capacitance is small. stomach.

[0041] On the other hand, as shown in FIG. 2B, the threshold voltage of a transistor is close to 0V. Even if the capacitor is a MOS capacitor, the Vb applied to the first gate electrode is applied to the source electrode. If Vb is set to a value greater than Vs (Vb-Vs>0), the threshold voltage of the transistor is set to negative. Specifically, as shown in Fig. 1(A) and (B), the wiring VO The voltage V applied to the current supply line ANODE is higher than the voltage ANODE to the first gate electrode Therefore, even if a low voltage is applied to the second gate electrode, However, the capacity to be held can be increased.

[0042] In the configurations of FIGS. 1A and 1B, the second gate electrode and the oxide semiconductor layer The insulating layer is formed by heating the oxide semiconductor layer to release oxygen and reduce oxygen vacancies in the oxide semiconductor layer. The thickness of the insulating layer between the gate electrode and the oxide semiconductor layer in the first embodiment is thinner than that of the insulating layer between the gate electrode and the oxide semiconductor layer in the first embodiment. The child MC can have a large capacity in a small area.

[0043] In FIG. 1A, the transistors M1, M2, and M3 are each configured as a single gate structure. As described above, as shown in FIG. 3A, the pixel PIX_A has a first gate electrode and a second gate electrode. The transistor may have gate electrodes and the gate electrodes may be connected to each other. The transistors M1, M2, and M3 are gated above and below the oxide semiconductor layer, similar to the capacitance element MC. The transistor has a structure in which a gate electrode is provided.

[0044] In FIG. 1A, the first gate electrode of the capacitance element MC is connected to the current supply line ANODE. However, it is possible to provide a voltage that can shift the threshold voltage of the transistor negatively. As long as the wiring can be made to be as long as it is possible, other configurations may be used. For example, the pixel PIX_B shown in FIG. In this way, the first gate electrode is connected to a wiring V1 different from the current supply line ANODE. The wiring V1 can also be connected to the voltage supply line V0, just like the current supply line ANODE. It is preferable to apply a voltage higher than

[0045] In FIG. 2A, the transistors M1, M2, and M3 are connected to each other by two gate electrodes. However, a configuration in which different signals are applied to the first gate electrode and the second gate electrode is adopted. For example, as shown in FIG. 4A, a pixel PIX_C may have transistors M1 and The first gate electrode of M2 is connected to the scanning line GL, and the second gate electrode is connected to the wiring V0. With this configuration, the first transistor M1 and the first transistor M2 The gate electrode and the scanning line GL made of a metal material can be arranged in the same layer. Therefore, the first gate electrode is formed of a conductive layer made of a metal material, and the second gate Even if the electrode is formed of a conductive layer made of a metal oxide material, the scanning line GL This avoids the problem of high resistance. Also, to reduce the resistance of the scanning line GL, In addition, the manufacturing cost can be reduced by the amount of extra wiring made of metal material.

[0046] In FIG. 2(A), the current supply line ANODE is parallel to the signal line SL and the wiring V0. In the configuration shown in FIG. 4B, the pixels PI Like X_D, the current supply line ANODE is arranged in a direction parallel to the scanning line GL. It is also possible.

[0047] [Transistor configuration example] Here, the transistors M1, M2, and M3 and the transistor applicable to the capacitance element MC An example of the configuration of a MOS capacitor will be described with reference to FIGS.

[0048] 5A, 5B, and 5C show examples of a semiconductor device including a transistor. The transistors shown in (A), (B), and (C) have a structure in which gate electrodes are provided above and below a semiconductor layer. It is made of.

[0049] 5A is a top view of a transistor 100, and FIG. 5B is a dot-dash diagram of FIG. 5A. 5(C) is a cross-sectional view taken along the dashed line Y1-Y2 in FIG. 5(A). In FIG. 5(A), components such as an insulating layer 110 are omitted for clarity. In the top view of the transistor, the same structure as in FIG. 5( As in A), some of the components may be omitted. The two directions are called the channel length (L) direction, and the dashed line Y1-Y2 direction is called the channel width (W) direction. This may be the case.

[0050] The transistor 100 shown in FIGS. 5A, 5B, and 5C includes a conductive layer formed on a substrate 102. layer 106, an insulating layer 104 on the conductive layer 106, and an oxide semiconductor layer 108 on the insulating layer 104. an insulating layer 110 on the oxide semiconductor layer 108; and a metal oxide layer 112 on the insulating layer 110. an insulating layer 116 on the insulating layer 104, the oxide semiconductor layer 108, and the metal oxide layer 112; The oxide semiconductor layer 108 has a channel region 108i in contact with the insulating layer 110. A source region 108s contacting the insulating layer 116 and a drain region 108s contacting the insulating layer 116 are also shown. 08d and.

[0051] The transistor 100 is also connected to the source via an opening 141 a provided in the insulating layer 116. A conductive layer 120a electrically connected to the space region 108s and an opening provided in the insulating layer 116 and a conductive layer 120b electrically connected to the drain region 108d via a gate insulating layer 141b. It is okay to do so.

[0052] The conductive layer 106 has a function as a first gate electrode and is made of a metal material. The metal oxide layer 112 functions as a second gate electrode and is made of a metal oxide material. The insulating layer 104 functions as a first gate insulating layer, and the insulating layer 110 has a function as a second gate insulating layer.

[0053] The insulating layer 116 contains either nitrogen or hydrogen or both. By configuring 16 to have either nitrogen or hydrogen or both, an oxide semiconductor Nitrogen or hydrogen or both are supplied to the dielectric layer 108 and the metal oxide layer 112. It is possible.

[0054] The insulating layer 116 may be, for example, a nitride insulating layer. Silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, etc. The hydrogen concentration in the insulating layer 116 is 1×10 22 atoms / cm 3 More preferably, it is equal to or greater than this.

[0055] The metal oxide layer 112 also has a function of supplying oxygen to the insulating layer 110. The insulating layer 110 is provided with a function of supplying oxygen to the insulating layer 110. By having the insulating layer 110 have an excess oxygen region, the oxidation By supplying the excess oxygen into the semiconductor layer 108, more specifically into the channel region 108i, Therefore, a highly reliable semiconductor device can be provided.

[0056] The insulating layer 110 is formed by using a single layer or a stacked layer of an oxide insulating layer or a nitride insulating layer. The insulating layer 110 may be made of, for example, silicon oxide, silicon oxynitride, or silicon nitride. Silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide or G It is sufficient to use a-Zn oxide or the like, and the film can be provided as a single layer or a multilayer.

[0057] The insulating layer 110 formed above the oxide semiconductor layer 108 contains excess oxygen. This makes it possible to selectively supply excess oxygen only to the channel region 108i. Alternatively, the channel region 108i, the source region 108s, and the drain region 108d may be over-doped. After the excess oxygen is supplied, the carrier density of the source region 108s and the drain region 108d is The degree can be selectively increased.

[0058] The metal oxide layer 112 is formed by absorbing nitrogen or hydrogen or both from the insulating layer 116. In other words, the metal oxide layer 112 is oxidized. It also functions as an oxide conductor (OC). Therefore, the metal oxide layer 112 has a higher carrier density than the oxide semiconductor layer 108.

[0059] The source region 108s and the drain region 108d of the oxide semiconductor layer 108, Each of the metal oxide layers 112 may contain an element that forms an oxygen deficiency. Representative elements that form oxygen vacancies are hydrogen, boron, carbon, nitrogen, fluorine, and phosphorus. , sulfur, chlorine, and rare gases. Representative examples of rare gas elements include helium, These include neon, argon, krypton, and xenon.

[0060] When an impurity element is added to an oxide semiconductor layer, a bond between a metal element and oxygen in the oxide semiconductor layer is formed. Alternatively, an impurity element is added to the oxide semiconductor layer, and oxygen vacancies are formed. Then, oxygen that has been bonded to a metal element in the oxide semiconductor layer is bonded to an impurity element, and the metal element As a result, oxygen is released from the oxide semiconductor layer, forming oxygen vacancies. The carrier density increases and the conductivity becomes higher.

[0061] In the transistor 100, the side edge of the insulating layer 110 and the side edge of the metal oxide layer 112 In other words, in the transistor 100, the insulating layer The upper end of the metal oxide layer 110 is generally aligned with the lower end of the metal oxide layer 112. The above structure can be obtained by processing the insulating layer 110 using the oxide layer 112 as a mask. do.

[0062] The oxide semiconductor layer 108 and the metal oxide layer 112 are made of In-M-Zn oxide (M is Al, The oxide semiconductor layer 108 and the oxide semiconductor layer 109 are formed of an oxide semiconductor such as Ga, Y, or Sn. For the metal oxide layer 112, In-Ga oxide or In-Zn oxide may be used. In particular, the oxide semiconductor layer 108 and the metal oxide layer 112 are made of oxides having the same constituent elements. Forming it from a semiconductor is preferable since it allows reducing the manufacturing cost.

[0063] When the oxide semiconductor layer 108 and the metal oxide layer 112 are In-M-Zn oxide, In -The number of atoms of the metal element in the sputtering target used to deposit the M-Zn oxide film The ratio preferably satisfies In≧M, Zn≧M. The atomic ratio of the metal elements in the mixture is In:M:Zn=1:1:1, In:M:Zn=1:1 :1.2, In:M:Zn=2:1:1.5, In:M:Zn=2:1:2.3, In: M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1 In:M:Zn=5:1:7, for example. and the metal oxide layer 112 have the atomic ratios of 1:1, 1:1, 1:1, 1:1, 1:1, 1:1, 1:1, The atomic ratio of the metal elements in the mixture can vary by about ±40%. When the atomic ratio of In:Ga:Zn=4:2:4.1 is used as a target for deposition, In this case, the atomic ratio of the oxide semiconductor layer to be formed is approximately In:Ga:Zn=4:2:3. There are cases.

[0064] The channel region 108i is an oxide semiconductor layer having a low impurity concentration and a low density of defect states. By using such a material, a transistor having better electrical characteristics can be manufactured. Here, a high-purity pure silicon has a low impurity concentration and a low defect level density (few oxygen vacancies). Alternatively, they are called pure or substantially pure. A highly intrinsic or substantially highly purified intrinsic oxide semiconductor has a small carrier generation source; Therefore, the carrier density can be reduced in the oxide semiconductor layer. The transistor in which the junction region is formed has electrical characteristics in which the threshold voltage is positive (normal Also known as off-state characteristics.) Also, high purity intrinsic or substantially high purity intrinsic Since the oxide semiconductor layer has a low density of defect states, the oxide semiconductor layer may also have a low density of trap states. In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer has a significantly reduced off-state current. Therefore, a channel region is formed in the oxide semiconductor layer. Such a transistor may have small fluctuations in electrical characteristics and become a highly reliable transistor. do.

[0065] On the other hand, the source region 108s, the drain region 108d, and the metal oxide layer 112 are insulating. The source region 108s, the drain region 108d, and the metal oxide layer 1 12 contacts the insulating layer 116, the source region 108s and the drain region 108s are Hydrogen and / or nitrogen are added to the region 108d and the metal oxide layer 112. This increases the carrier density.

[0066] The carrier density of an oxide semiconductor layer will be described below.

[0067] The factors that affect the carrier density of the oxide semiconductor layer include the oxygen in the oxide semiconductor layer. Examples of the causes include vacancies (Vo) and impurities in the oxide semiconductor layer.

[0068] When the number of oxygen vacancies in the oxide semiconductor layer increases, hydrogen bonds to the oxygen vacancies (this state is called V O When the oxide semiconductor layer is heated to 1000 V, the density of defect states increases. When the amount of the impurities is large, the density of defect states due to the impurities is high. By controlling the density of defect states in the oxide semiconductor layer, the carrier density in the oxide semiconductor layer can be controlled. do.

[0069] As shown in FIG. 5C, the oxide semiconductor layer 108 functions as a first gate electrode. The conductive layer 106 and the metal oxide layer 112 functioning as the second gate electrode are opposed to each other. The gate electrodes are sandwiched between two conductive layers or oxide semiconductor layers that function as gate electrodes. It is being done.

[0070] The structure of FIG. 5C allows the transistor 100 to function as a transistor. In this case, the oxide semiconductor layer 108 included in the transistor 100 is used as a first gate electrode. The electric field generated by the scanning signal of the conductive layer 106 functioning as the second gate electrode is generated. The metal oxide layer 112 can be electrically surrounded by an electric field due to a constant voltage.

[0071] Although not shown in FIG. 5C, the transistor 100 has a first gate electrode and an opening in the insulating layer 110 and the insulating layer 104 for connecting the second gate electrode to the By having such a structure, the transistor 100 may have a structure including The oxide semiconductor layer 108 is disposed between the conductive layer 106 serving as a first gate electrode and the conductive layer 106 serving as a second gate electrode. The metal oxide layer 112 acts as a gate electrode for the It is possible.

[0072] In addition, by using the configuration of FIG. 5C, the transistor 100 can function as a MOS capacitor. In this case, the threshold voltage of the transistor is mastered to the conductive layer 106 functioning as the first gate electrode. The MOS capacitor can be provided with a voltage that causes an inverse shift between the oxide semiconductor layer 108 and the The gate electrode is made up of an insulating layer 110 and a metal oxide layer 112 which functions as a second gate electrode. It can be achieved.

[0073] When the transistor 100 functions as a MOS capacitor, as shown in the cross-sectional view of FIG. A capacitance is formed by the oxide semiconductor layer 108, the insulating layer 110, and the metal oxide layer 112. In other words, a MOS capacitor corresponding to the capacitance element MC in the circuit diagram of FIG. In addition, in FIG. 6(A) and FIG. 6(B), "Vg", "Vs", and "V b” shows the corresponding voltages in the circuit diagram and cross-sectional view, as in Fig. 2(A).

[0074] In the configurations of FIGS. 6A and 6B, the voltage Vg applied to the conductive layer 106 is a transistor. A voltage is applied to the insulating layer 110 constituting the MOS capacitor so as to shift the threshold voltage of the capacitor in the negative direction. The thickness 110t of the insulating layer 104 is smaller than the thickness 104t of the insulating layer 104. A metal oxide layer 112 is provided between the insulating layer 110 and the metal oxide layer 112. Even when forming a capacitor, a high capacitance can be ensured, and a large capacitance can be achieved in a small area. It can be said that:

[0075] [Top view configuration example] Next, in FIG. 7, the circuit configuration of the pixel PIX_D in FIG. 4(B) is shown, excluding the configuration of the light emitting element, etc. FIG. 8 shows an example of an applicable top view. 1 illustrates how layers and semiconductor layers are separated into layers and connected via openings. 9A is a cross-sectional view taken along the dotted line P1-P2 in FIG. 7, and FIG. 9B is a cross-sectional view taken along the dotted line P1-P2 in FIG. FIG. 10 is a cross-sectional view of the transistor arrangement in the top view of FIG. FIG. 1 is a circuit diagram showing an arrangement of a plurality of pixels in which the same voltage is applied.

[0076] In the top view of FIG. 7, the scanning line GL, the signal line SL, the wiring V0, and the current supply line ANODE a transistor M1, a transistor M2, a transistor M3, a capacitance element MC, In the layer structure of the conductive layer, the metal oxide layer, and the oxide semiconductor layer, Layers and the like are not shown in the figure.

[0077] The layer structure of the conductive layer, metal oxide layer, and oxide semiconductor layer constituting each wiring in FIG. The structure can be understood from FIG. 8 and FIG. 9. A first gate electrode is provided on the substrate SUB. Next, a conductive layer 151, a conductive layer 152, and a conductive layer 153 are provided. The oxide semiconductor layer 161 and the oxide semiconductor layer 162 are formed by way of the insulating layer 154 which functions as a gate insulating layer. Next, an insulating layer 163 is formed, which functions as a second gate insulating layer. The metal oxide layer 171, the metal oxide layer 172, and the Then, a part of the oxide semiconductor layer 161 and a metal oxide layer 173 are formed. A part of the oxide semiconductor layer 162, the metal oxide layer 171, the metal oxide layer 172, and the gold The metal oxide layer 173 is selectively formed on the insulating layer 174, which selectively increases the carrier density in the metal oxide layer 173 to increase the electrical conductivity. Conductive layers that function as source and drain electrodes of transistors or various wirings. 181, conductive layer 182, conductive layer 183, conductive layer 184, and conductive layer 185 are provided. Next, insulating layers 186, 187 and 188, which function as interlayer insulating layers, are formed. In addition, the insulating layer 186, the insulating layer 187, and the insulating layer 188 are provided with a conductive layer 1 85. This opening 190 will later form a pixel electrode. , which are openings for connection to the light-emitting element provided thereon.

[0078] In addition, in Figs. 7 and 8, the squares marked with crosses represent openings formed in the insulating layer. The openings allow the conductive layer, metal oxide layer, and oxide layer to pass through each layer as shown by the arrows in Figure 8. 8 shows a conductive layer 151 which becomes the scanning line GL, a current supply line A A conductive layer 152 which becomes a NODE, a conductive layer 181 which becomes a wiring V0, and a conductive layer 1 which becomes a signal line SL. 82 is shown.

[0079] As can be seen from the diagrams of FIGS. 7, 8 and 9, transistors M1, M2 and M3 In this case, the first gate electrode and the second gate electrode are connected to each other. This increases the amount of current flowing through the transistor compared to when the gate electrodes are not connected to each other. It can be done.

[0080] As can be seen from FIGS. 7, 8 and 9, the metal oxide forming the capacitance element MC A current supply line ANODE is disposed below the layer 171, the insulating layer 163, and the oxide semiconductor layer 161. In this configuration, the conductive layer 152 is provided with The voltage of the current supply line ANODE shifts the threshold voltage of the transistor negatively and is insulated. Since the thickness of the layer 163 is smaller than the thickness of the insulating layer 154, a high capacitance can be ensured. Therefore, it is possible to achieve a large capacity in a small area.

[0081] The conductive layer 152 connected to the current supply line ANODE and the conductive layer 151 serving as the scanning line GL are The light-shielding layer is made of a metal material having light-shielding and electrical conductivity. Therefore, it is possible to reduce the fluctuation of the electrical characteristics of the MOS capacitance and the transistor. do.

[0082] FIG. 10 shows a circuit diagram of a 2×2 pixel PIX_ UL, pixel PIX_UR, pixel PIX_LL and pixel PIX_LR In FIG. 10, the matrix is ​​arranged in two rows (m rows, (m+1 rows), n columns, and (n+1) columns. In FIG. 10, the mth scanning line GL_m and the (m+1)th scanning line GL_m are shown. line GL_m+1, the n-th signal line SL_n, and the (n+1)-th signal line SL_n+1. , the wiring V0, and the current supply line ANODE are illustrated.

[0083] As shown in FIG. 10, the pixel PIX_UL and the pixel PIX_UR are arranged with the wiring V0 in between. The transistors M1, M2, M3 and the capacitance element MC that make up the pixel are arranged symmetrically. The same applies to the pixels PIX_LL and PIX_LR. The wiring V0 is sandwiched between transistors M1, M2, and M3 and a capacitance element MC are arranged symmetrically and connected to the same wiring V0.

[0084] As shown in FIG. 10, the pixels PIX_UL and PIX_LL are supplied with current. The pixel is made up of transistors M1, M2, and M3 and a capacitance element MC, which are arranged on either side of the line ANODE. The pixels PIX_ are arranged symmetrically and connected to the same current supply line ANODE. Similarly, the UR and the pixel PIX_LR are connected to the current supply line ANODE. The transistors M1, M2, M3 and the capacitance element MC are arranged symmetrically, and the same current supply line AN It is configured to connect to ODE.

[0085] By arranging the elements and wiring as shown in FIG. 10, The number of wirings, etc. that are arranged can be reduced. The configuration of FIG. 10 improves pixel resolution. This is preferable in designing because the area of ​​the pixel can be reduced by the amount of the reduction in the number of wirings, etc.

[0086] [Variations] A circuit configuration that can be applied to one embodiment of the present invention includes transistors M1 and M2 in FIG. For example, the pixel configuration may have two or less pixel elements as shown in FIG. The present invention is also applicable to pixel configurations having transistors.

[0087] The pixel configuration of the pixel PIX_E shown in FIG. 11A includes a transistor M1 and a transistor M3, a capacitance element MC, and a light-emitting element EL. This corresponds to a circuit configuration in which resistor M2 is omitted.

[0088] In the configuration shown in FIG. 11(A), a transistor is used as a MOS capacitor. In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. A voltage is applied to negatively shift the threshold voltage of the transistor, and the second gate electrode, a metal In a MOS capacitor that is composed of an oxide layer, an insulating layer, and an oxide semiconductor layer, The capacitance when a voltage is applied can be increased. The insulating layer between the first gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer. Since a high capacity can be ensured, a large capacity can be achieved in a small area.

[0089] A circuit configuration that can be applied to one embodiment of the present invention is not limited to the pixel configuration in FIG. For example, as shown in FIG. 11B, a pixel configuration having four or more transistors is applicable.

[0090] The pixel configuration of the pixel PIX_F shown in FIG. 11A includes a transistor M1 and a transistor M2, a transistor M3, a transistor M4, a transistor M5, and a capacitive element MC The pixel configuration includes a signal line SL, a current supply line ANOD, and a light emitting element EL. E, wiring V0, common wiring CATHODE, and scanning lines GL1, GL2, and GL3. It works like this.

[0091] In the configuration shown in FIG. 11B, a transistor is used as a MOS capacitor. In the element MC, the voltage of the current supply line ANODE is applied to the first gate electrode. A voltage is applied to negatively shift the threshold voltage of the transistor, and the second gate electrode, a metal In a MOS capacitor that is composed of an oxide layer, an insulating layer, and an oxide semiconductor layer, The capacitance when a voltage is applied can be increased. The insulating layer between the first gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer. Since a high capacity can be ensured, a large capacity can be achieved in a small area.

[0092] In addition, the circuit configuration that can be applied to one embodiment of the present invention is not limited to a pixel configuration having a light-emitting element. The present invention can also be applied to a pixel having a liquid crystal element and a light-emitting element.

[0093] The pixel configuration of the pixel PIX_G shown in FIG. 12A as an example is a transistor M1 and , a transistor M2, a transistor M3, a capacitive element MC, a transistor M6, and a capacitor The pixel configuration includes a signal line SL_LC, Signal line SL_EL, current supply line ANODE, wiring V0, scanning line GL_EL, scanning line GL_ It operates by LC, common wiring CATHODE.

[0094] In the pixel PIX_G, the video signal applied to the gate electrode of the transistor M3 is The pixel P is supplied from the signal line SL_EL by controlling the scanning signal supplied to the line GL_EL. In IX_G, a video signal is applied to one electrode of the liquid crystal element LC via the scanning line GL_LC That is, the pixel PIX The gradation display of the liquid crystal element LC and the light-emitting element EL can be controlled separately for each of the pixel regions _G. In this configuration, unlike backlight control in which multiple pixels are lit uniformly, The light emission of the light-emitting element EL according to the image can be controlled at the smallest unit, such as the pixel level. Therefore, it is possible to suppress excess light emission. This makes it possible to reduce power consumption.

[0095] In addition, in the configuration of pixel PIX_G, the liquid crystal element LC has a reflective electrode that utilizes external light. The intensity of the reflected light can be adjusted by the liquid crystal layer to display gradations. A display device having G can improve visibility outdoors.

[0096] In addition, in the configuration of pixel PIX_G, the intensity of the light emitted by the light-emitting element EL is adjusted to display gradations. Therefore, a display device having pixel PIX_G has low visibility indoors where the intensity of external light is low. can be improved.

[0097] In addition, the liquid crystal element LC is controlled outdoors to display the image, or the light emitting element EL is controlled indoors. The configuration for controlling and displaying the image can be achieved by providing a sensor capable of measuring the illuminance on the display device. good.

[0098] In the configuration shown in FIG. 12(A), the transistor functions as a MOS capacitor. In the capacitance elements MC and MC1, the voltage of the current supply line ANODE is applied to the first gate electrode. Then, a voltage is applied to negatively shift the threshold voltage of the transistor, and a second gate voltage is applied. A MOS capacitor composed of a metal oxide layer as a pole, an insulating layer, and an oxide semiconductor layer. The capacitance can be increased when a low voltage is applied. The insulating layer between the oxide semiconductor layer and the first gate electrode is thicker than the insulating layer between the oxide semiconductor layer and the first gate electrode. Since the film thickness is thin and high capacity can be secured, a large capacity can be achieved in a small area. .

[0099] A display device having the pixel PIX_G shown in FIG. 12A is a display device having a cross-sectional view shown in FIG. As shown in the figure, the light-emitting element EL and the liquid crystal element LC can be provided in an overlapping manner. A layer 191 having a transistor is provided between the light-emitting element EL and the liquid crystal element LC. The transistor-containing layer 191 includes a transistor M1, a transistor M2, and a , a transistor M3, a capacitance element MC, a transistor M6, and a capacitance element MC1. The liquid crystal element LC in FIG. REF ) can be reflected by electrode 1 92. The electrode 192 is for receiving light (L EL 193 opening for transmitting will be established.

[0100] The cross-sectional schematic diagram shown in FIG. 12B is applied to the pixel PIX_G described in FIG. 12A. The display device is configured to switch between the light emitting element EL and the liquid crystal element LC according to the illuminance. For example, when the illuminance is high, the liquid crystal element LC is driven to obtain a desired gray scale. When the illuminance is low, the light-emitting element EL is driven to obtain a desired gradation. With this configuration, a display device with low power consumption and excellent visibility can be obtained.

[0101] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0102] (Embodiment 2) In this embodiment, a cross-sectional structure example of a display device according to one embodiment of the present invention will be described.

[0103] [Example of the configuration of the display device] FIG. 13 is a schematic top view of a display device 10 to be described below. The display device 10 has a pixel unit 11, a scanning line driving circuit 12, a signal line driving circuit 13, a terminal portion 15, a plurality of wirings 16a, and It has a plurality of wirings 16b and the like.

[0104] [Cross-sectional configuration example 1] 14 is a schematic cross-sectional view of the display device 10. FIG. 14 is a cross-sectional view of the display device 10 taken along the cutting line A1 in FIG. Corresponds to the cross section along -A2.

[0105] The display device 10 includes a first substrate 201 and a second substrate 202 bonded together by an adhesive layer 220. It has a combined configuration.

[0106] On the first substrate 201, the terminal portion 15, the wiring 16b, and the transistors constituting the signal line driving circuit 13 are arranged. A transistor 252, a transistor 251 constituting a pixel unit 11, a transistor 252, a capacitor A capacitor 253, a light emitting element 254, etc. are provided on the first substrate 201. A layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, a spacer 215, etc. are provided. There are.

[0107] On the first substrate 201 side of the second substrate 202, an insulating layer 221, a light-shielding layer 231, a coloring layer 2 32, structure 230a, structure 230b, etc. are provided.

[0108] A light-emitting element 254 is provided on the insulating layer 213. The light-emitting element 254 has a first electrode The pixel electrode 225 functions as a pixel electrode, an EL layer 222, and a second electrode 223. Between the electrode 225 and the EL layer 222, an optical adjustment layer 224 is provided. is provided to cover the ends of the pixel electrode 225 and the optical adjustment layer 224 .

[0109] The transistor 251 is the same as the transistor M1 or M2 described in FIG. 1(A) of the first embodiment. The transistor 252 is a transistor that functions as M1 or M2. The transistor functions as the transistor M3 described in FIG.

[0110] The transistors 251, 252, and 255 each have a conductive layer 2 serving as a first gate electrode. 75, and a conductive layer 272 that functions as a second gate electrode. The semiconductor in which the channel is formed is sandwiched between two gate electrodes. This corresponds to the conductive layer 106 functioning as the first gate electrode described in FIG. 2 of the first embodiment. The conductive layer 272 functions as the second gate electrode described in FIG. 2 of the first embodiment. 1 corresponds to the metal oxide layer 112.

[0111] The conductive layer 275 serves as an electrode that can repair oxygen vacancies in the semiconductor layer 271 by releasing oxygen. This makes it possible to stabilize the electrical characteristics of the transistor.

[0112] In addition, in a transistor connected to a light emitting element such as the transistor 252, two gates It is preferable to electrically connect the two electrodes to each other so that the same signal is applied to them. Such transistors have enhanced field effect mobility compared to other transistors. This makes it possible to increase the on-current. As a result, it is possible to realize a circuit capable of high-speed operation. It can be made.

[0113] The capacitor 253 is formed by a part of the conductive layer 275, a part of the insulating layer 211, and a part of the semiconductor layer 271. As shown in FIG. 14, the insulating layer 217 is formed of a part of the conductive layer 274. It may be composed of a part of the conductive layer 273 and a part of the conductive layer 274 .

[0114] FIG. 14 shows an example in which the light emitting element 254 is a light emitting element having a top emission structure. The light emitted from the light emitting element 254 is emitted to the second substrate 202 side. By this, a transistor, a capacitor, and a Since circuits, wiring, etc. can be arranged, the aperture ratio of the pixel portion 11 can be increased.

[0115] The second substrate 202 has a colored layer 23 on the side of the first substrate 201 that overlaps the light emitting element 254. In addition, in the portion where the colored layer 232 is not provided, a light-shielding layer 231 is provided. The light-shielding layer 231 may be provided so as to overlap the signal line driving circuit 13 as shown in FIG. Alternatively, the colored layer 232 and the light-shielding layer 231 may be covered with a light-transmitting An overcoat layer may be provided.

[0116] In addition, on the side of the first substrate 201 of the second substrate 202, in the region inside the adhesive layer 220, A structure 230a is provided, and a structure 230b is provided in an area outside the adhesive layer 220. The structures 230a and 230b are formed by insulating layers at the ends of the second substrate 202. When a crack occurs in the second substrate 221 or the second substrate 202, the function of suppressing the progression of the crack is provided. In FIG. 14, the structures 230a and 230b are the same as the light-shielding layer 231. The following is an example of a laminated structure of a layer made of the same film as the colored layer 232a. By using a laminated structure of two or more layers in this way, the progression of cracks can be further suppressed. In this embodiment, the adhesive layer 220 is sandwiched between structures 230 on both sides. Although the configuration in which the structure 230a and the structure 230b are arranged is shown, either one may be sufficient. If there is no risk of racking (for example, if the rigidity of the second substrate 202 is high), The structure 230a and the construction 230b may not be provided.

[0117] The spacer 215 is disposed on the insulating layer 214. The spacer 215 is a first substrate. The gap space is controlled so that the distance between the first substrate 201 and the second substrate 202 does not become shorter than necessary. The spacer 215 has a function as a spacer. The angle is preferably 45 degrees or more and 120 degrees or less, and more preferably 60 degrees or more and 100 degrees or less. More preferably, the angle is between 75 degrees and 90 degrees. This makes it easier to form a region where the thickness of the EL layer 222 is thin on the side surface of the spacer 215. Therefore, a current flows between adjacent light emitting elements via the EL layer 222. In particular, when the pixel section 11 has high resolution, the phenomenon of the emission of light can be suppressed. In this case, the distance between adjacent light emitting elements is small, so that the spacer 215 having such a shape is used. It is effective to provide the EL layer 222 between the optical elements. This is particularly effective when the

[0118] The spacer 215 serves as a shielding mass when forming the EL layer 222, the second electrode 223, etc. When using a mask, a mask gap is provided to prevent the mask from scratching the surface to be formed. It may also have a function as a separator.

[0119] The spacers 215 are preferably provided so as to overlap the wiring that crosses the scan lines.

[0120] FIG. 14 shows an example of a display device 10 using a color filter method. As the layer 232, one of red (R), green (G), and blue (B) is applied. In addition, a white (W) sub-pixel may be used to express one color. By applying the yellow (Y) sub-pixel, color reproducibility can be improved and power consumption can be reduced. preferable.

[0121] In the light-emitting element 254, a microcavity is formed by the colored layer 232 and the optical adjustment layer 224. The combination of structures allows the display device 10 to emit light with high color purity. The thickness of the optical adjustment layer 224 may be different depending on the color of each subpixel. In some cases, the optical adjustment layer may not be provided.

[0122] In addition, an EL layer that emits white light is applied as the EL layer 222 included in the light emitting element 254. By applying such a light-emitting element 254, the EL layer 222 is provided in each subpixel. Since there is no need to paint the pixels separately, costs can be reduced and yields can be improved. In addition, by providing optical adjustment layers with different thicknesses for each subpixel, The EL layer 222 may be painted separately for each sub-pixel. In this case, optical adjustment is performed. Either the layer or the colored layer, or both of them may be omitted. In each subpixel, at least the light-emitting layer of the EL layer 222 is formed by coating, and the other layers are It may be formed without applying different colors.

[0123] FIG. 14 shows an example in which an FPC 242 is provided to electrically connect to the terminal portion 15. Therefore, the display device 10 shown in Fig. 14 can also be called a display module. Furthermore, a display device in which an FPC or the like is not provided can also be called a display panel.

[0124] The terminal portion 15 is electrically connected to the FPC 242 via the connection layer 243 .

[0125] In FIG. 14, the terminal portion 15 is made of the wiring 16b and a conductive film made of the same conductive film as the pixel electrode 225. In this manner, the terminal portion 15 is formed by stacking a plurality of conductive layers. The layered structure not only reduces electrical resistance but also increases mechanical strength. This is preferable because

[0126] The insulating layers 211 and 221 are made of a material that is difficult for impurities such as water and hydrogen to diffuse into. In other words, it is preferable that the insulating layer 211 and the insulating layer 221 function as a barrier film. With such a configuration, the first substrate 201 and the second substrate 202 can be Even if a material having moisture permeability is used, the light emitting element 254 and the transistors may be exposed to moisture. This effectively prevents impurities from entering through the display, resulting in a highly reliable display device. This makes it possible to realize this position.

[0127] In FIG. 14, a hollow seal having a space 250 between a first substrate 201 and a second substrate 202 is shown. For example, the space 250 is filled with an inert gas such as nitrogen or a rare gas. The space 250 may be filled with a liquid crystal material or a fluid material such as oil. Alternatively, the space 250 may be depressurized. However, the present invention is not limited to this, and may be a solid seal filled with resin or the like.

[0128] [Cross-sectional configuration example 2] FIG. 15 shows a configuration suitable for bending the pixel section 11 and the signal line driving circuit 13. 1 shows a configuration example of a display device.

[0129] In the display device 10 shown in FIG. 15, a first substrate 201 and a second substrate 202 are sealed with a sealing material 260. Therefore, an example of a bonded solid sealing structure is shown.

[0130] Also, a bonding layer 261 is provided on the first substrate 201, and an insulating layer 216 is provided on the bonding layer 261. Transistors, light emitting elements, etc. are provided on the insulating layer 216. As with 21, a material that is resistant to the diffusion of impurities such as water and hydrogen can be used.

[0131] In addition, an adhesive layer 262 is provided between the second substrate 202 and the insulating layer 221 .

[0132] As shown in FIG. 15, the insulating layer 213 is disposed closer to the pixel section 11 and the signal line driving circuit 13 than the pixel section 11 and the signal line driving circuit 13. An opening is provided on the outer periphery of the first substrate 201. For example, the insulating layer 213 may be When a resin material is used, an opening is provided to surround the pixel section 11 and the signal line driving circuit 13. With such a configuration, the vicinity of the side surface of the insulating layer 213 that is in contact with the outside and Since the pixel section 11 and the signal line driving circuit 13 are not continuous, the insulating layer It is possible to suppress the diffusion of impurities such as water and hydrogen through 213.

[0133] As shown in FIG. 15, a solid sealing structure is formed between the first substrate 201 and the second substrate 202. Therefore, it is easy to keep the distance between the first substrate 201 and the second substrate 202 uniform. A flexible substrate can be suitably used as the pixel portion 11. In this case, the scanning line driving circuit 12 and the signal line driving circuit 13 are folded in part or in whole. For example, the display device 10 can be attached to a curved surface, or the pixel portion of the display device 10 can be By folding the device, electronic devices of various shapes can be realized. [Variations] An example of a touch panel having a touch sensor will be described below.

[0134] FIG. 16 shows a touch panel in which an on-cell type touch sensor is applied to the configuration shown in FIG. An example of the rule is shown below.

[0135] A conductive layer 291 and a conductive layer 292 are provided on the outer surface of the second substrate 202. An insulating layer 294 is provided over the insulating layer 294. A conductive layer 293 is provided over the insulating layer 294. The conductive layer 293 is disposed so as to sandwich the conductive layer 291 via an opening provided in the insulating layer 294. The insulating layer 294 and the substrate 296 are electrically connected to the two conductive layers 292 that are formed on the substrate 296. are attached together by an adhesive layer 295.

[0136] The capacitance formed between the conductive layer 291 and the conductive layer 292 changes when a detection object approaches. This makes it possible to detect the approach or contact of a detection target. By arranging a number of conductive layers 291 and a number of conductive layers 292 in a lattice pattern, position information is obtained. It is possible.

[0137] A terminal portion 299 is provided in an area close to the outer periphery of the second substrate 202. 99 is electrically connected to the FPC 297 via a connection layer 298 .

[0138] Here, the substrate 296 is also used as a substrate that is directly touched by a sensing object such as a finger or a stylus. In that case, a protective layer (ceramic coat, etc.) may be provided on the substrate 296. The protective layer is preferably made of, for example, silicon oxide, aluminum oxide, yttrium oxide, Inorganic insulating materials such as yttria-stabilized zirconia (YSZ) can be used. Alternatively, the substrate 296 may be made of tempered glass. The tempered glass may be made by ion exchange or air-cooling tempering. The material is subjected to physical or chemical treatment and compressive stress is applied to the surface. The touch sensor can be provided on one side of the tempered glass, and the opposite side can be used as a display for, for example, an electronic device. By placing it on the outermost surface of the device and using it as a touch surface, the thickness of the entire device can be reduced. can.

[0139] As the touch sensor, for example, a capacitive touch sensor can be used. There are two types of capacitive touch sensors: surface capacitive touch sensors and projected capacitive touch sensors. There are self-capacitance and mutual capacitance methods. When using the mutual capacitance method, multiple points can be detected simultaneously. In the following, a projected capacitive touch sensor is used. This section explains what happens when

[0140] However, the present invention is not limited to this, and may be adapted to detect the approach or contact of a detection object such as a finger or stylus. Various sensors that can be used for the measurement of the temperature and humidity can also be applied.

[0141] Here, wiring and the like constituting a touch sensor are formed on the outer surface of the second substrate 202. Although the configuration of a so-called on-cell type touch panel has been shown, the present invention is not limited to this. Applies to out-cell type touch panels and in-cell type touch panels. By using an on-cell or in-cell touch panel configuration, Even if a touch panel function is added to the display panel, the thickness can be reduced.

[0142] The above is a description of the cross-sectional configuration example.

[0143] [About each component] Each of the above components will be described below.

[0144] 〔substrate〕 A material having a flat surface can be used for the substrate of the display device. The substrate from which the light is extracted is made of a material that transmits the light. For example, glass, quartz, ceramic, etc. Materials such as tantalum, sapphire, and organic resins can be used.

[0145] By using a thin substrate, the display device can be made lighter and thinner. In addition, by using a substrate that is thick enough to provide flexibility, a flexible display device can be realized. Cut.

[0146] Examples of glass include non-alkali glass, barium borosilicate glass, and aluminophore glass. Usable materials include silicate glass.

[0147] Examples of materials having flexibility and transparency to visible light include materials having flexibility. Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient, such as polyamide-imide. Resin, polyimide resin, PET, etc. can be suitably used. Uses substrates impregnated with resin or substrates with inorganic fillers mixed into organic resin to reduce the coefficient of thermal expansion Since the substrate using such a material is light in weight, the surface using the substrate can be The display device can also be made lightweight.

[0148] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the above substrate, a metal substrate can be used. Metal substrates have high thermal conductivity and are suitable for sealing substrates. Heat can be easily conducted across the entire plate, preventing localized temperature increases in the display device. ,preferable.

[0149] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys and stainless steel are preferably used. It is possible.

[0150] In addition, the surface of the metal substrate is oxidized or an insulating film is formed on the surface to perform insulation treatment. For example, a coating method such as spin coating or dipping, an electrodeposition method, or the like may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in air or heating it, an oxide film is formed on the surface of the substrate by anodizing, etc. This is also fine.

[0151] A hard coat layer (e.g., , silicon nitride layer, etc.) or a layer of material capable of dispersing pressure (e.g. aramid resin layer, etc.) In order to prevent the deterioration of the life of the light emitting element due to moisture, etc., Alternatively, an insulating film with low water permeability may be laminated on a flexible substrate. Uses inorganic insulating materials such as silicon, silicon oxide nitride, aluminum oxide, and aluminum nitride. There can be.

[0152] The substrate may be formed by laminating a plurality of layers. In particular, the substrate may have a glass layer. By this, the barrier properties against water and oxygen can be improved, and a highly reliable display device can be obtained. For example, a substrate having a glass layer, an adhesive layer, and an organic resin layer laminated thereon from the side closer to the light emitting element is used. By providing such an organic resin layer, the glass layer is prevented from breaking or cracking. The composite material of such glass material and organic resin can suppress the generation of the heat and improve the mechanical strength. By applying this composite material to the substrate, it becomes possible to create a highly reliable flexible display device. It is possible.

[0153] [Transistor] The transistor in the display device has a conductive layer functioning as a gate electrode and a back gate A conductive layer functioning as an electrode, a semiconductor layer, a conductive layer functioning as a source electrode, and a drain electrode. The semiconductor device has a conductive layer that functions as a gate electrode and an insulating layer that functions as a gate insulating layer.

[0154] That is, in the transistor included in the display device of one embodiment of the present invention, gate voltages are provided above and below the channel. This is a structure in which electrodes are provided.

[0155] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0156] As a semiconductor material used for a transistor, for example, an oxide semiconductor is used for a semiconductor layer. In particular, oxide semiconductors with a larger band gap than silicon can be used. It is preferable that the semiconductor has a wider band gap and a lower carrier density than silicon. A conductive material is preferable because it can reduce the current in the off state of the transistor.

[0157] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) are included. nothing.

[0158] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal portions. It is preferable to use an oxide semiconductor layer that is not subject to the above-mentioned conditions.

[0159] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor layer due to stress is suppressed. Such oxide semiconductors are suitable for use in flexible display devices that are used in a curved state. It is possible.

[0160] In addition, by using such a crystalline oxide semiconductor for the semiconductor layer, This suppresses fluctuations in the capacitance, thereby achieving a highly reliable transistor.

[0161] In addition, a transistor using an oxide semiconductor having a larger band gap than silicon is Due to its low off-state current, the charge stored in the capacitor connected in series with the transistor can be discharged for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the grayscale of the image displayed in each display area. As a result, a display device with extremely reduced power consumption can be realized. The drive mode can be switched between a high frame frequency and a low frame frequency. In the drive mode that operates at a low frame frequency, By writing image data once and then extending the interval until the next image data is written, This makes it possible to reduce the power consumption required for writing image data during that time.

[0162] [Conductive Layer] In addition to the gates, sources, and drains of transistors, various wiring and Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and titanium alloys. Aluminum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or thallium Examples of the metals include tin and tin oxide, and alloys containing tin as the main component. Films containing the materials can be used as single layers or as multilayer structures. For example, silicon A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film laminated on a titanium film, A two-layer structure in which an aluminum film is laminated on a stainless steel film, and a copper-magnesium-aluminum alloy Two-layer structure with copper film laminated on gold film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure in which a copper film is laminated on top of a titanium film or titanium nitride film is laminated on top of that with an aluminum film. A titanium or copper film is laminated on the copper film, and a titanium or titanium nitride film is formed on the copper film. Layer structure, molybdenum film or molybdenum nitride film, and aluminum film or A three-layer structure in which a copper film is laminated and a molybdenum film or molybdenum nitride film is further formed on top of the copper film. Incidentally, oxides such as indium oxide, tin oxide, and zinc oxide may also be used. In addition, the use of copper containing manganese is preferable because it improves the controllability of the shape by etching. .

[0163] In addition, the light-transmitting Examples of materials having this property include indium oxide, indium tin oxide, and indium zinc oxide. , zinc oxide, zinc oxide doped with gallium, or other conductive oxides, or graphene. Or gold, silver, platinum, magnesium, nickel, tungsten, chromium Metallic materials such as molybdenum, iron, cobalt, copper, palladium, or titanium, or the metals An alloy material containing the metal can be used. Alternatively, a nitride of the metal material (e.g., nitride Titanium) may be used. Metal materials, alloy materials (or their nitrides) may be used. In the case where the conductive layer is a conductive layer, the conductive layer may be thin enough to have light-transmitting properties. For example, a silver-magnesium alloy and indium tin oxide can be used. It is preferable to use a laminated film or the like since the electrical conductivity can be increased.

[0164] [Insulating layer] Examples of insulating materials that can be used for each insulating layer, overcoat, spacer, etc. include For example, resins such as acrylic and epoxy resins, and resins having siloxane bonds such as silicone resins. Others: silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide Alternatively, inorganic insulating materials such as ammonium nitrate may be used.

[0165] In addition, it is preferable that the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and thus prevents a decrease in the reliability of the device. Can be controlled.

[0166] Insulating films with low water permeability include silicon nitride films and silicon oxynitride films, which are made of nitrogen and silicon. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0167] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×1 0 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 d ay)] below.

[0168] [Adhesive layer, sealing material] Adhesive layers and sealing materials include photo-curable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, and heat curable adhesives. Various curing adhesives such as curable adhesives and anaerobic adhesives can be used. Examples of resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, and polyimide resins. Fat, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) Resins, EVA (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc. A material with low moisture permeability is preferable. A two-part mixed resin may also be used. A card or the like may also be used.

[0169] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture can be prevented from adsorbing to the functional element. This is preferable because it is possible to suppress the intrusion of foreign matter and improve the reliability of the display panel.

[0170] In addition, by mixing a filler having a high refractive index or a light scattering material into the resin, a light emitting element can be formed. For example, titanium oxide, barium oxide, Zeolite, zirconium, etc. can be used.

[0171] [Light-emitting element] The light-emitting element may be a self-emitting element that is illuminated by a current or a voltage. The category includes devices whose light intensity can be controlled. For example, light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0172] The light-emitting elements are top emission type, bottom emission type, and dual emission type. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0173] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. high hole transporting material, hole blocking material, high electron transporting material, electron injection The material contains a highly conductive material or a bipolar material (a material with high electron transport and hole transport properties). The insulating layer may further include a layer containing the insulating layer.

[0174] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. Each of the layers constituting the EL layer may be formed by deposition (including vacuum deposition). The insulating layer can be formed by a method such as a transfer method, a printing method, an ink-jet method, or a coating method.

[0175] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are These molecules recombine and the luminescent material contained in the EL layer emits light.

[0176] When a white-emitting light-emitting element is used as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. For example, the light emitted by two or more luminescent materials may be of complementary colors. By selecting a light-emitting material so as to satisfy the above relationship, white light can be obtained. For example, Luminescent substances that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that emit light containing two or more of the spectral components of R, G, and B, It is preferable that the spectrum of the light emitted from the light emitting element is in the visible light region. A luminescent element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm). It is preferable to use a material having a peak in the yellow wavelength region. The tor is preferably a material that also has spectral components in the green and red wavelength regions. .

[0177] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably laminated. The layers may be stacked in contact with each other or separated by an area that does not contain any luminescent material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (e.g., host material, assist material) as the phosphorescent layer, and both of the emitting layers A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. In addition, the driving voltage is reduced.

[0178] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer interposed therebetween to form a tandem element.

[0179] The conductive film that transmits visible light is, for example, indium oxide or indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium-doped In addition, gold, silver, platinum, magnesium, nickel, etc. can be used. tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Metallic materials such as tantalum, alloys containing these metallic materials, or nitrides of these metallic materials (e.g., nitrides) Titanium dioxide, etc. can also be used by forming it thin enough to have light transmission properties. A laminated film of the above materials can be used as the conductive layer. For example, an alloy of silver and magnesium It is preferable to use a laminated film of ITO and ITO because it can increase the conductivity. Lafene and the like may also be used.

[0180] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above-mentioned metal materials and alloys may be used. Tungsten, neodymium, germanium, etc. may be added. Aluminum alloys such as tungsten alloys, aluminum-nickel alloys, and aluminum-neodymium alloys Alloys containing palladium (aluminum alloys), silver and copper alloys, silver, palladium and copper alloys, An alloy containing silver, such as an alloy of silver and magnesium, can be used. An alloy containing silver and copper can be The heat resistance is high, which is preferable. Furthermore, the metal film or oxide semiconductor film in contact with the aluminum alloy film is By laminating the metal film, oxidation of the aluminum alloy film can be suppressed. Examples of the material for the oxide semiconductor film include titanium and titanium oxide. A light-transmitting conductive film and a film made of a metal material may be laminated. For example, a laminate of silver and ITO may be used. A laminated film of a silver-magnesium alloy and ITO, etc., can be used.

[0181] The conductive layers may be formed by evaporation or sputtering. Using a discharge method such as the inkjet method, a printing method such as the screen printing method, or a plating method It can be formed.

[0182] In addition, the above-mentioned light-emitting layer, the substance having a high hole-injecting property, the substance having a high hole-transporting property, the The layer including a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, or the like is These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, and polymers). For example, by using quantum dots in the light-emitting layer, It can also function as such.

[0183] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. , materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0184] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples of such materials include resin materials.

[0185] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, oxide semiconductors, and a plurality of In addition, the light-shielding layer may be made of a material of the coloring layer. For example, a laminated film containing a film containing a certain color may be used as a colored layer that transmits light of a certain color. A laminated structure of a film containing a material and a film containing a material used for a colored layer that transmits light of a different color is used. By using the same material for the colored layer and the light-shielding layer, the equipment can be standardized and the manufacturing process can be simplified. This is preferable because it simplifies the process.

[0186] [Connection Layer] The connection layer that connects the FPC or IC to the terminals is made of anisotropic conductive film (ACF). Anisotropic Conductive Film (ACP) and Anisotropic Conductive Paste (ACP) Anisotropic Conductive Paste) can be used. do.

[0187] The above is a description of each component.

[0188] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0189] (Embodiment 3) In this embodiment mode, an example of a manufacturing method of a display device using a flexible substrate will be described. do.

[0190] Here, the display element, the circuit, the wiring, the electrodes, the insulating layer, and the optical components such as the colored layer and the light-shielding layer are The layers that contain the optical components are collectively called the element layer. For example, the element layer may be a layer that contains a light-emitting element. In addition to the light-emitting element, wiring electrically connected to the light-emitting element, transistors used in pixels and circuits, The semiconductor device may include an element such as a capacitor.

[0191] In addition, in this case, when the light emitting device is completed (the manufacturing process is completed), the element layer is supported. A member that supports the substrate and has flexibility is called a substrate. This also includes extremely thin films, etc., with a thickness of 10 nm or more and 300 μm or less.

[0192] Representative methods for forming an element layer on a substrate having a flexible insulating surface include There are two methods as follows. One is to form an element layer directly on a flexible substrate. The other method is to form an element layer on a support substrate that is different from the flexible substrate. After that, the element layer is peeled off from the support base material, and the element layer is transferred to the substrate. Although not described in detail, in addition to the above two methods, a device layer is formed on a non-flexible substrate. Alternatively, the substrate may be made flexible by thinning it by polishing or the like.

[0193] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since the process is simplified. If the element layer is formed in a state where the plate is fixed to the supporting substrate, the transfer within and between the devices becomes difficult. This is preferable because it is easier.

[0194] In addition, when a method is used in which an element layer is formed on a supporting base material and then transferred to a substrate, the supporting base material is first A release layer and an insulating layer are laminated on the supporting substrate, and an element layer is formed on the insulating layer. The element layer is then transferred to the substrate. It is only necessary to select a material that causes peeling at the interface between the release layer and the insulating layer or within the release layer. In this method, a material having high heat resistance is used for the support substrate and the peeling layer, and thus the element layer is formed. This allows the upper limit of the temperature required for forming the element layer to be increased, resulting in a more reliable element. This is preferable because an element layer having the above structure can be formed.

[0195] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and a layer containing the metal material A layer containing an oxide is laminated and used. In addition, silicon oxide, silicon nitride, etc. are used as an insulating layer on the peeling layer. It is preferable to use a multi-layer structure including silicon, silicon oxynitride, silicon nitride oxide, etc. In this specification, an oxynitride is a material containing more oxygen than nitrogen as a component. Nitrogen oxide refers to a material that has a high nitrogen content compared to oxygen in its composition. Refers to the material.

[0196] The element layer and the support substrate can be peeled off by applying a mechanical force or by etching the peeling layer. Examples include etching the surface or allowing a liquid to penetrate the peeled interface. Alternatively, the difference in thermal expansion between the two layers that form the peel interface can be utilized to heat or cool the material. The peeling may be performed by

[0197] When peeling begins, a starting point for peeling is first formed, and the peeling progresses from that starting point. The starting point of peeling is preferably a point where a part of the insulating layer or the peeling layer is locally heated by laser light or the like. and by physically cutting or penetrating a part of the insulating layer or peeling layer with a sharp object. It can be formed.

[0198] In addition, when peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peeling layer.

[0199] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. By doing so, it is possible to peel off the glass and the organic resin at the interface. The above organic resins can also be used as the substrate.

[0200] Alternatively, a heat generating layer is provided between a supporting substrate and an insulating layer made of an organic resin, and the heat generating layer is heated. The heat generating layer may be formed by applying a current to the heat generating layer and the insulating layer. Materials that generate heat when current flows through them, materials that generate heat when light is absorbed, and materials that generate heat when a magnetic field is applied. For example, the heat generating layer can be made of various materials such as The material to be used can be selected from the group consisting of semiconductors, metals, and insulators.

[0201] A more specific example of the manufacturing method will be described below. By changing the layer formed as the peeled layer, the flexible input / output device according to one embodiment of the present invention can be obtained. Force devices can also be made.

[0202] First, an island-shaped release layer 303 is formed on a fabrication substrate 301, and a layer to be peeled 3 is formed on the release layer 303. Separately from this, an island-shaped peeling layer 321 is formed on the production substrate 321 (FIG. 17(A)). A layer 323 is formed, and a layer to be peeled 325 is formed on the peeling layer 323 (FIG. 17(B)).

[0203] Here, an example of forming an island-shaped release layer is shown, but the present invention is not limited to this. When peeling the layer to be peeled off from the substrate, the interface between the substrate and the peeling layer, and the interface between the peeling layer and the layer to be peeled off In this embodiment, a material is selected that allows peeling to occur in the peeling layer. The following shows an example where peeling occurs at the interface of the peeling layer. However, this is not limited to this, depending on the structure. In addition, when the layer to be peeled has a laminated structure, The layer is specifically referred to as the first layer.

[0204] For example, when the peeling layer has a laminated structure of a tungsten film and a tungsten oxide film, Peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, A part of the peeling layer (here, the tungsten oxide film) may remain on the peeled layer side. The remaining release layer may then be removed.

[0205] For example, when the peeling layer has a laminated structure of a tungsten film and a tungsten oxide film, Peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, A part of the peeling layer (here, the tungsten oxide film) may remain on the peeled layer side. The remaining release layer may then be removed.

[0206] The substrate used must be heat-resistant enough to withstand the processing temperatures during the manufacturing process. The substrate to be fabricated may be, for example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, or the like. A laminated substrate, a metal substrate, a resin substrate, a plastic substrate, etc. can be used.

[0207] When a glass substrate is used as the substrate, an oxide film is provided between the substrate and the peeling layer as a base film. Forming insulating films such as silicon film, silicon oxynitride film, silicon nitride film, silicon nitride oxide film, etc. This is preferable because it is possible to prevent contamination from the glass substrate.

[0208] The release layer is made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, Zirconium, Zinc, Ruthenium, Rhodium, Palladium, Osmium, Iridium , an element selected from silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the silicon-containing layer may be amorphous, microcrystalline, or polycrystalline. Also usable are aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, and indium oxide. Indium, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. A high melting point semiconductor such as tungsten, titanium, or molybdenum may be used for the peeling layer. Use of a metal material is preferable because it increases the degree of freedom in the process of forming the peeled layer.

[0209] The peeling layer can be formed by, for example, a sputtering method, a plasma CVD method, or a coating method (spin coating). The peeling layer can be formed by a method such as a printing method, a droplet ejection method, a dispensing method, etc. is, for example, 10 nm or more and 200 nm or less, preferably 20 nm or more and 100 nm or less.

[0210] When the peeling layer has a single layer structure, it is preferably a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten and tungsten oxide. A layer containing an oxynitride, a layer containing an oxide or oxynitride of molybdenum, or a layer containing a tungsten oxide or nitride. Alternatively, a layer containing an oxide or oxynitride of a mixture of fluorine and molybdenum may be formed. A mixture of tungsten and molybdenum is, for example, a mixture of tungsten and molybdenum. Correct.

[0211] In addition, a layer including tungsten and a layer including a tungsten oxide may be used as the peeling layer. When forming a structure, a layer containing tungsten is formed, and an insulating layer formed of oxide is formed on the layer. By forming a film, a tungsten oxide-containing film is formed at the interface between the tungsten layer and the insulating film. Alternatively, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment. Treatment, oxygen plasma treatment, nitrous oxide (N 2 O) Plasma treatment, ozone water, etc., have strong oxidizing power A layer containing tungsten oxide may be formed by treating with a solution or the like. Treatment and heating may be carried out using oxygen, nitrogen, or nitrous oxide, either alone or in combination with other gases. The above plasma treatment or heat treatment may be performed under a mixed gas atmosphere. By changing the temperature, it is possible to control the adhesion between the release layer and the insulating film that will be formed later. be.

[0212] In addition, if peeling can be performed at the interface between the preparation substrate and the layer to be peeled off, a peeling layer may not be provided. For example, glass is used as the substrate, and polyimide, polyester, or polyimide is placed in contact with the glass. Next, an organic resin such as polyolefin, polyamide, polycarbonate, or acrylic is formed. By performing laser irradiation or heat treatment, the adhesion between the formation substrate and the organic resin is improved. Then, insulating films and transistors are formed on the organic resin. Laser irradiation is performed at a higher energy density, or heat treatment is performed at a higher temperature than the previous heat treatment. By carrying out this process, it is possible to separate the organic resin from the substrate at its interface. Separation may also be achieved by allowing a liquid to permeate the interface between the substrate and the organic resin.

[0213] In this method, insulating films and transistors are formed on organic resins that have low heat resistance, so In the manufacturing process, the substrate cannot be exposed to high temperatures. Since the capacitor does not require a high-temperature fabrication process, it can be suitably formed on an organic resin.

[0214] The organic resin may be used as a substrate for constituting a device, or the organic resin may be removed. Alternatively, another substrate may be attached to the exposed surface of the layer to be peeled using an adhesive. Another substrate (support film) may be attached to the resin using an adhesive.

[0215] Alternatively, a metal layer is provided between the substrate and the organic resin, and a current is passed through the metal layer to form the metal The layer may be heated to effect peeling at the interface between the metal layer and the organic resin.

[0216] The insulating layer (first layer) formed in contact with the peeling layer is a silicon nitride film or a silicon oxynitride film. The insulating film may be formed in a single layer or multiple layers using a silicon oxide film, a silicon nitride oxide film, or the like. However, the present invention is not limited to this, and an optimum material can be selected depending on the material used for the release layer. This can be done.

[0217] The insulating layer is formed by using a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, it is possible to form a thin film at a temperature of 250°C or higher and 400°C or higher by plasma CVD. By forming the film at a temperature of 0.4 ° C. or less, a dense film with extremely high moisture resistance can be obtained. The thickness of the insulating layer is 10 nm to 3000 nm, and further 200 nm to 1500 nm. Below is preferred.

[0218] Next, the fabrication substrate 301 and the fabrication substrate 321 are placed so that the surfaces on which the peeled layers are formed face each other. The adhesive layer 307 is then cured (FIG. 17( C).

[0219] The bonding of the preparation substrate 301 and the preparation substrate 321 is preferably performed under a reduced pressure atmosphere. It is.

[0220] In addition, FIG. 17C shows a case where the peeling layer 303 and the peeling layer 323 have different sizes. However, a release layer of the same size may be used as shown in FIG. 17(D).

[0221] The adhesive layer 307 is connected to the release layer 303, the layer to be peeled 305, the layer to be peeled 325, and the release layer 323. The end of the adhesive layer 307 is placed on the release layer 303 or the release layer 323. It is preferable that the edge of the first strip is located inside the edge of the first strip. This can prevent the fabrication substrate 301 and the fabrication substrate 321 from being strongly attached to each other, and the subsequent peeling process can be performed without using the adhesive. This can prevent the yield from decreasing.

[0222] The adhesive layer 307 may be made of, for example, a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various types of curing adhesives such as curing adhesives and anaerobic adhesives can be used. Adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide, etc. Examples include amide resin, imide resin, PVC resin, PVB resin, and EVA resin. A material with low moisture permeability, such as epoxy resin, is preferable. The adhesive is applied only to the desired area. It is preferable to use a material with low fluidity so that the adhesive sheet can be used. Alternatively, a sheet or film type adhesive may be used. For example, OCA (optica A clear adhesive film can be preferably used.

[0223] The adhesive may have tackiness before bonding, and may be tacky when heated or irradiated with light after bonding. The adhesiveness may be exhibited by

[0224] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. Adsorbent materials may be used. Desiccants may be included to prevent the ingress of moisture from the atmosphere. This is preferable because it can suppress deterioration of the elements and improve the reliability of the device.

[0225] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 18(A) and 18(B)).

[0226] The preparation substrate 301 and the preparation substrate 321 may be peeled off from either one of them. In this case, the substrate may be peeled off from a substrate on which a large release layer is formed, or from a substrate on which a small release layer is formed. It may be peeled off from the substrate. In this case, it may be peeled off from the substrate on which the element is formed, or from the other substrate. Here, an example is shown in which the formation substrate 301 is peeled off first.

[0227] The laser beam is focused on the adhesive layer 307 in a cured state, the layer to be peeled 305, and the peeling layer 303, which are overlapped with each other. The area is irradiated (see arrow P1 in FIG. 18(A)).

[0228] By removing a part of the first layer, a starting point of peeling can be formed (encircled by a dotted line in FIG. 18(B)). At this time, not only the first layer but also other layers of the layer to be peeled 305 and the peeling layer 3 03. A portion of the adhesive layer 307 may be removed.

[0229] The laser light is preferably applied from the substrate side on which the peeling layer to be peeled is provided. When the laser beam is irradiated to the region where the peeled layer 305 and the peeling layer 323 overlap, By forming cracks only in the layer 305 to be peeled out of the layer 325 to be peeled, the substrate can be selectively fabricated. The plate 301 and the release layer 303 can be peeled off (see the area surrounded by the dotted line in FIG. 18(B)). Here, an example is shown in which a part of each layer constituting the layer to be peeled 305 is removed.

[0230] Then, the layer to be peeled 305 and the preparation substrate 301 are separated from each other from the formed peeling starting point (FIG. 18(C)(D)). As a result, the peeled layer 305 is removed from the preparation substrate 301 to the preparation substrate 321. can be transposed to

[0231] For example, from the starting point of peeling, physical force (peel-off by hand or tool, roller The layer to be peeled 305 and the preparation substrate 301 are separated by a process such as a process of rotating the substrate to separate the layer to be peeled off. That's good.

[0232] In addition, a liquid such as water is permeated into the interface between the peeling layer 303 and the layer to be peeled 305 to form the fabricated substrate 3 The liquid may be separated from the peeling layer 303 and the peeled layer 305 by capillary action. By penetrating between the separation layers 305, separation can be easily achieved. Static electricity can adversely affect the functional elements contained in the peeled layer 305 (semiconductor elements can be electrostatically It can suppress damage caused by the power being blown away by the enemy.

[0233] Next, the exposed peeled layer 305 and the substrate 331 are bonded together using an adhesive layer 333. The adhesive layer 333 is cured (FIG. 19(A)).

[0234] The layer to be peeled 305 and the substrate 331 are preferably bonded together under a reduced pressure atmosphere. .

[0235] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 19B and 19C).

[0236] The laser beam is focused on the adhesive layer 333 in a cured state, the layer to be peeled 325, and the peeling layer 323, which are overlapped with each other. The area is irradiated (see arrow P2 in FIG. 19(B)). This forms the starting point of peeling (see the area surrounded by the dotted line in Figure 19(C). Here is an example of removing a part of each layer that constitutes 325.) In this case, not only the first layer but also Other layers of the layer to be peeled 325, or parts of the peeling layer 323 and adhesive layer 333 may be removed.

[0237] It is preferable that the laser light is irradiated from the formation substrate 321 side on which the peeling layer 323 is provided. .

[0238] Then, the layer to be peeled 325 and the preparation substrate 321 are separated from each other from the formed peel starting point (FIG. 19(D)). As a result, the layer to be peeled 305 and the layer to be peeled 325 are transferred to the substrate 331. It is possible.

[0239] Thereafter, a substrate may be further attached to the layer 325 to be peeled.

[0240] The exposed peeled layer 325 and the substrate 341 are bonded together with an adhesive layer 343. 43 is cured (FIG. 20(A)). In this step, an opening is provided in advance in the substrate 341. The following shows an example of this.

[0241] In this manner, the layer to be peeled off can be sandwiched between the pair of flexible substrates.

[0242] Thereafter, as shown in FIG. 20(B), unnecessary ends of the substrates 331 and 341 are cut off. At this time, the end portions of the layer to be peeled 305 and the layer to be peeled 325 may be removed at the same time. It may be cut.

[0243] By the above method, a flexible device can be manufactured. By using the configuration exemplified in the above embodiment, a display device having flexibility can be manufactured. can.

[0244] In the above-described method for manufacturing a light-emitting device according to one embodiment of the present invention, After bonding a pair of substrates having the above-mentioned structure, a starting point for peeling is formed by irradiating the substrate with laser light. The peeling layer and the layer to be peeled are then put into a state where they can be easily peeled from each other, and then the peeling is performed. This can improve the yield of the peeling process.

[0245] In addition, after a pair of substrates on which a peeled layer is formed are bonded together in advance, After peeling, a substrate constituting a device to be manufactured can be attached to the peeled layer. Therefore, when bonding the layers to be peeled together, the substrates to be manufactured have low flexibility. This allows for more precise alignment than when bonding flexible substrates together. It can be improved.

[0246] As shown in FIG. 21A, the end of the region 351 to be peeled of the layer 305 is It is preferable that the edge of the peeling layer 303 is located inside the edge of the peeling layer 303. This improves the yield of the peeling process. In addition, when there are a plurality of regions 351, as shown in FIG. As shown in FIG. 21(C), a peeling layer 303 may be provided for each region 351. A plurality of regions 351 may be provided on one release layer 303 .

[0247] The above is a description of the method for manufacturing a flexible display device.

[0248] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0249] (Embodiment 4) In this embodiment, examples of electronic devices to which the display device of one embodiment of the present invention can be applied will be described. do.

[0250] Using the display device of one embodiment of the present invention, an electronic device or a lighting device can be manufactured. By using such a display device, it is possible to obtain a large capacity even with a small area. By using the display device of one embodiment of the present invention, a low voltage can be maintained. Even when performing gray scale display using a large capacity, electronic devices and lighting devices can be used. It can be made.

[0251] Examples of electronic devices include television sets, desktop or notebook computers, etc. Personal computers, computer monitors, digital cameras, digital videos Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples include live video games, pachinko machines, and other large game machines.

[0252] The electronic device or lighting device according to one embodiment of the present invention can be used for interior or exterior walls of a house or building, Or, it can be incorporated along curved surfaces in the interior or exterior of a vehicle.

[0253] The electronic device of one embodiment of the present invention may include a secondary battery and may be powered by non-contact power transmission. It is preferable that the secondary battery can be charged.

[0254] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include radical batteries, lead-acid batteries, secondary air batteries, nickel-zinc batteries, and silver-zinc batteries. do.

[0255] The electronic device according to one embodiment of the present invention may include an antenna. By doing so, it is possible to display images and information on the display unit. And if a secondary battery is included, the antenna may be used for contactless power transmission.

[0256] The electronic device according to one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation Numbers, distance, light, liquids, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared rays) It may have.

[0257] The electronic device according to one embodiment of the present invention can have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, running various software (programs) a function to read out a program or data recorded on a recording medium; It can have functions etc.

[0258] Furthermore, in an electronic device having a plurality of display units, one of the display units is used mainly for displaying image information. and another display section mainly displays text information, or multiple displays It can have a function for displaying a stereoscopic image by displaying an image taking into account parallax. Furthermore, in electronic devices having an image receiving unit, the function of taking still or moving images, The function of automatically or manually correcting the captured image, and the function of storing the captured image on a recording medium (external or electronic) It can have functions such as storing the captured image on a computer (built into the device) and displaying the captured image on the display unit. Note that the functions of the electronic device of one embodiment of the present invention are not limited to those described above, and various functions can be used. may have the following structure:

[0259] 22(A), (B), (C), (D), and (E) show electronic devices having a curved display unit 7000. The display unit 7000 has a curved display surface, and the display unit 7000 is arranged to display a curved display surface. The display unit 7000 may be flexible.

[0260] The display unit 7000 is manufactured using the display device or the like according to one embodiment of the present invention. This reduces power consumption and provides a highly reliable electronic device with a curved display. can.

[0261] An example of a mobile phone is shown in FIG. 22(A) and (B). Mobile phone 71 shown in FIG. 22(A) The mobile phone 7110 shown in FIG. 22B includes a housing 7101 and a display unit 7102. 000, operation button 7103, external connection port 7104, speaker 7105, microphone 71 06, etc. The mobile phone 7110 shown in FIG. 22(B) further includes a camera 7107. Yes.

[0262] Each mobile phone has a touch sensor on the display unit 7000. All operations, such as inputting text, can be performed by touching the display 7000 with a finger or a stylus. It can be done.

[0263] In addition, the operation button 7103 can be used to turn the power on and off, and to display the display unit 7000. For example, from the email composition screen, you can change the type of image displayed on the You can then switch to the main menu screen.

[0264] In addition, a detection device such as a gyro sensor or an acceleration sensor may be provided inside the mobile phone. The orientation of the mobile phone (portrait or landscape) is then determined and the orientation of the screen display of the display unit 7000 is automatically adjusted. The screen orientation can be dynamically changed. By touching 7000, operating the operation button 7103, or using the microphone 7106 This can also be done by inputting, etc.

[0265] An example of a portable information terminal is shown in FIG. 22(C) and (D). The portable information terminal shown in FIG. 22(C) The portable information terminal 7200 and the portable information terminal 7210 shown in FIG. 22D each include a housing 7201 and It has a display unit 7000. In addition, it has operation buttons, an external connection port, a speaker, a microphone, an The display unit 7000 may have an antenna, a camera, a battery, etc. The mobile information terminal is operated by touching the display unit 7000 with a finger or a stylus. This can be done.

[0266] The portable information terminal exemplified in this embodiment is, for example, a telephone, a notebook, an information viewing device, etc. Specifically, as a smartphone, The portable information terminal exemplified in this embodiment can be, for example, a mobile phone, E-mail, viewing and writing text, playing music, internet communication, computer games, etc. The various applications can be executed.

[0267] The portable information terminal 7200 and the portable information terminal 7210 are configured to display text and image information on a plurality of devices. For example, as shown in Figure 22(C) and (D), three operation buttons can be displayed on the screen. A button 7202 can be displayed on one side, and rectangular information 7203 can be displayed on the other side. FIG. 22(C) shows an example in which information is displayed on the upper side of the mobile information terminal, and FIG. 22(D) Here is an example of how information is displayed on the side of a mobile information terminal. Also, when the mobile information terminal has three or more sides, The information may be displayed on the

[0268] An example of such information is notifications from social networking services (SNS). , display notifying you of incoming e-mails or telephone calls, subject of e-mails or sender name , date and time, time, battery level, antenna reception strength, etc. Or, the information is displayed Instead of information, operation buttons, icons, etc. may be displayed at the position where the information is displayed.

[0269] For example, the user of the portable information terminal 7200 may carry the portable information terminal 7200 in a breast pocket of a garment. When the item is stored, the display (information 7203 in this example) can be confirmed.

[0270] Specifically, the telephone number or name of the caller of the incoming call is input to the mobile information terminal 7200. The user takes the mobile information terminal 7200 out of his / her pocket and You can check the display and decide whether or not to answer the call without taking it out.

[0271] FIG. 22E shows an example of a television device. The television device 7300 has a housing 7 A display unit 7000 is built into the housing 301. This shows a configuration that supports 301.

[0272] The television device 7300 shown in FIG. 22E is operated by an operation switch provided in the housing 7301. This can be done by a separate remote control 7311 or the display unit 70. The display unit 7000 may be provided with a touch sensor, and the operation can be performed by touching the display unit 7000 with a finger or the like. The remote control unit 7311 may display information to be output from the remote control unit 7311. The remote control 7311 may have a display unit that displays the operation keys or touch panel. The channel and volume can be controlled by the touch panel, and the display 7000 displays You can control the image that is displayed.

[0273] The television device 7300 includes a receiver and a modem. The receiver can receive general television broadcasts. It can also receive TV broadcasts by wire or by modem. By connecting to a wireless communication network, one-way (sender to receiver) or It is also possible to communicate information in both directions (between sender and receiver, or between receivers). be.

[0274] FIG. 22(F) shows an example of a lighting device having a curved light-emitting portion.

[0275] The light-emitting portion of the lighting device illustrated in FIG. 22F is formed using the display device or the like according to one embodiment of the present invention. According to one aspect of the present invention, a light emitting device having a curved light emitting portion and reduced power consumption is manufactured. A highly reliable lighting device can be provided.

[0276] The light-emitting portion 7411 of the lighting device 7400 shown in FIG. 22(F) has two convexly curved Therefore, the light emitting parts are arranged symmetrically around the lighting device 7400. It can illuminate in all directions.

[0277] Furthermore, the light-emitting unit of the lighting device 7400 may be flexible. The light emitting surface of the light emitting part can be freely adjusted according to the purpose. The structure may be bendable.

[0278] The lighting device 7400 includes a base 7401 having an operation switch 7403 and a It has a light emitting portion that is supported.

[0279] In this embodiment, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing having the above may be fixed to a ceiling or hung from the ceiling. The light-emitting surface can be curved, so a specific area can be illuminated by curving the light-emitting surface in a concave shape. It can be used to illuminate a small area, or the light-emitting surface can be curved convexly to illuminate an entire room.

[0280] 23(A) to 23(I) show a flexible, bendable display unit 70. 1 shows an example of a portable information terminal having a USB 3.01.

[0281] The display portion 7001 is manufactured using a display device or the like according to one embodiment of the present invention. The display device can be bent to a diameter of 0.01 mm or more and 150 mm or less. The display unit 7001 may be provided with a touch sensor, and when the display unit 7001 is touched with a finger or the like, According to one aspect of the present invention, a flexible display device can be used to operate a mobile information terminal. It is possible to provide an electronic device having a highly reliable electronic device.

[0282] 23(A) and (B) are perspective views showing an example of a portable information terminal. 00 includes a housing 7501, a display unit 7001, a drawer member 7502, an operation button 7503, etc. has.

[0283] The portable information terminal 7500 has a flexible display unit wound in a roll shape in a housing 7501. The display unit 7001 can be pulled out using a pull-out member 7502. do.

[0284] In addition, the portable information terminal 7500 can receive video signals using a built-in control unit. The image can be displayed on the display unit 7001. The battery is built in. Also, the housing 7501 is equipped with a terminal for connecting a connector, The image signal and power may be directly supplied from the outside via wires.

[0285] In addition, the operation button 7503 can be used to turn the power on and off and to switch the displayed image. In addition, in FIG. 23(A) and (B), the mobile information terminal 7500 In the example shown, the operation buttons 7503 are arranged on the front surface of the mobile information terminal 7500. It may be placed on the same surface (front surface) as the display surface or on the back surface.

[0286] FIG. 23B shows a portable information terminal 7500 with the display portion 7001 pulled out. In this state, an image can be displayed on the display unit 7001. FIG. 23(A) shows a state in which the display unit 7001 is rolled up, and FIG. 23(B) shows a state in which the display unit 7001 is pulled out. The portable information terminal 7500 may display differently depending on the state. For example, as shown in FIG. In the state of (A), the rolled-up portion of the display unit 7001 is hidden. This allows the power consumption of the portable information terminal 7500 to be reduced.

[0287] When the display unit 7001 is pulled out, the display surface of the display unit 7001 is made flat. To fix the display unit 7001 in place, a reinforcing frame may be provided on the side of the display unit 7001 .

[0288] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is outputted.

[0289] An example of a foldable portable information terminal is shown in FIG. 23(C) to FIG. 23(E). In Fig. 23(C) it is shown in an unfolded state, and in Fig. 23(D) it is shown in an unfolded or folded state. In the middle of changing from one state to the other, in Figure 23(E), the mobile phone is in a folded state. The portable information terminal 7600 is highly portable when folded. When unfolded, the large, seamless display area provides excellent visibility.

[0290] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending the two housings 7601 via the hinge 7602, The terminal 7600 can be reversibly transformed from an unfolded state to a folded state.

[0291] 23(F) and (G) show an example of a foldable portable information terminal. In FIG. 23(G), the display unit 7001 is folded inward. The mobile information terminal 7650 is folded so that the 7001 faces outward. The terminal 7650 has a display portion 7001 and a non-display portion 7651. When not in use, the display unit 7001 can be folded inward. This can prevent the surface from getting dirty or scratched.

[0292] FIG. 23H shows an example of a flexible portable information terminal. The device has a housing 7701 and a display unit 7001. , 7703b, speakers 7704a, 7704b as audio output means, and an external connection port 7 The portable information terminal 7700 may have a display 705, a microphone 7706, and the like. The battery 7709 may be mounted on the display unit 7 It may be placed overlapping with 001.

[0293] The housing 7701, the display portion 7001, and the battery 7709 are flexible. The portable information terminal 7700 can be bent into a desired shape and can also be twisted. For example, the display portion 7001 of the portable information terminal 7700 is Alternatively, the portable information terminal 7700 can be folded so that the front and rear faces are facing outward. The display unit 7701 and the display unit 7702 may be wound in a roll. Since the mobile information terminal 7700 can freely change shape, even if it is dropped, The advantage of this structure is that it is less likely to be damaged even if an external force is applied thereto unintentionally.

[0294] In addition, since the portable information terminal 7700 is lightweight, the upper part of the housing 7701 can be held with a clip or the like. Do not hang it from a wall or use it by fixing the housing 7701 to a wall with a magnet, etc. It can be conveniently used in a variety of situations.

[0295] FIG. 23I shows an example of a wristwatch-type portable information terminal. The device includes a keyboard 7801, a display unit 7001, an input / output terminal 7802, and an operation button 7803. The handheld terminal 7801 functions as a housing. The battery 7805 may be mounted on the display unit 70. 01 or band 7801, etc.

[0296] The band 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.

[0297] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It supports various functions such as auto-start, silent mode and power saving mode. For example, the operating system built into the portable information terminal 7800 can be Depending on the system, the functions of the operation buttons 7803 can be freely set.

[0298] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can start the application.

[0299] In addition, the portable information terminal 7800 can perform short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, You can also make calls using Lee.

[0300] The portable information terminal 7800 may also have an input / output terminal 7802. If the device has an 802, it can directly exchange data with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the portable information terminal shown in the example is performed by non-contact power transmission without going through the input / output terminal. You may go.

[0301] FIG. 24(A) shows the exterior of the automobile 7900. FIG. 24(B) shows the driver's seat of the automobile 7900. The automobile 7900 includes a body 7901, wheels 7902, a windshield 7903, and a It also has lights 7904 and fog lights 7905.

[0302] The display device of one embodiment of the present invention can be used for a display portion of an automobile 7900, for example. For example, the display devices of one embodiment of the present invention are used in the display portions 7910 to 7917 in FIG. A location can be provided.

[0303] The display portion 7910 and the display portion 7911 are provided on a windshield of the automobile. In one embodiment of the present invention, an electrode of a display device is formed using a light-transmitting conductive material. As a result, a so-called see-through display device can be obtained, in which the opposite side can be seen through. If the display device is in a see-through state, it will not obstruct the view when driving the car 7900. Therefore, the display device of one embodiment of the present invention is installed on the windshield of the automobile 7900. In addition, when a transistor or the like is provided in the display device, an organic semiconductor A light-transmitting organic transistor using a material or a transistor using an oxide semiconductor It is preferable to use a transistor having the following structure.

[0304] The display unit 7912 is provided on the pillar. The display unit 7913 is provided on the dashboard. For example, an image from an imaging means provided on the vehicle body is displayed on the display unit 7912. By extending the display, it is possible to compensate for the visibility obstructed by the pillar. The 913 can complement the view blocked by the dashboard, and the display 7914 This can complement the view blocked by the door. By projecting an image from the imaging means, blind spots can be compensated for and safety can be increased. In addition, by projecting images that complement the invisible parts, safety checks can be performed more naturally and without discomfort. This can be done.

[0305] The display unit 7917 is provided on the handle. 6, or display 7917 displays navigation information, speedometer, tachometer, driving It can provide a variety of information, such as distance traveled, fuel amount, gear status, air conditioning settings, and more. In addition, the display items and layout displayed on the display can be customized to suit the user's preferences. The above information can be displayed on the display units 7910 to 7914. can also be displayed.

[0306] Note that the display portions 7910 to 7917 can also be used as lighting devices.

[0307] The display unit to which the display device according to one embodiment of the present invention is applied may be flat. The display device of one embodiment may have a configuration that does not have a curved surface and is not flexible.

[0308] Figure 24 (C) and (D) show digital signage. The digital signage includes a housing 8000, a display unit 8001, and a screen. It also has an LED lamp, operation keys (power switch, or operation It may have a variety of functions, including a power switch, connection terminals, various sensors, a microphone, etc.

[0309] Figure 24(D) shows a digital signage mounted on a cylindrical pillar.

[0310] The larger the display unit 8001 is, the more information can be displayed at one time. The wider the display unit 8001 is, the more easily it will catch people's attention, and the more effective it will be for advertising, for example. can.

[0311] By applying a touch panel to the display unit 8001, images or videos can be displayed on the display unit 8001. It is preferable because it not only displays information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0312] The portable game machine shown in FIG. 24E includes a housing 8101, a housing 8102, a display portion 8103, and a display unit 8104. , a display unit 8104, a microphone 8105, a speaker 8106, an operation key 8107, Includes Tyrus 8108 etc.

[0313] The portable game machine shown in FIG. 24(E) has two display units (display unit 8103 and display unit 810 Note that the number of display units included in the electronic device of one embodiment of the present invention is not limited to two. If an electronic device has multiple display units, at least one At least one display portion may include the display device of one embodiment of the present invention.

[0314] FIG. 24F shows a notebook personal computer, which includes a housing 8111 and a display unit 811 2, a keyboard 8113, a pointing device 8114, etc.

[0315] The display device of one embodiment of the present invention can be applied to the display portion 8112.

[0316] FIG. 25(A) shows the appearance of the camera 8400 with the viewfinder 8500 attached. show.

[0317] The camera 8400 includes a housing 8401, a display unit 8402, an operation button 8403, and a shutter. The camera 8400 has a button 8404 and the like. The camera 8400 also has a detachable lens 8406. It is attached.

[0318] Here, the camera 8400 is a camera in which the lens 8406 is removed from the housing 8401 and replaced. However, the lens 8406 and the housing may be integrated together.

[0319] The camera 8400 can capture an image by pressing the shutter button 8404. In addition, the display portion 8402 has a function as a touch panel. It is also possible to capture an image by doing so.

[0320] The housing 8401 of the camera 8400 has a mount having electrodes, and a viewfinder 850 In addition to 0, strobe devices etc. can also be connected.

[0321] The finder 8500 includes a housing 8501, a display unit 8502, a button 8503, and the like. .

[0322] The housing 8501 has a mount that engages with the mount of the camera 8400, The mount can be attached to the camera 8400. The mount also includes an electrode The image received from the camera 8400 through the electrode is displayed on the display unit 8502. It is possible to do so.

[0323] The button 8503 functions as a power button. The 8502 display can be switched on and off.

[0324] The display unit 8402 of the camera 8400 and the display unit 8502 of the finder 8500 are The display device according to one embodiment of the present invention can be applied.

[0325] In FIG. 25(A), the camera 8400 and the finder 8500 are separate electronic devices. However, these are configured to be detachable. The camera may also have a built-in viewfinder with a display device such as a digital camera.

[0326] FIG. 25(B) shows the appearance of the head mounted display 8200.

[0327] The head mounted display 8200 includes a mounting part 8201, a lens 8202, and a main body 82 8203, a display unit 8204, a cable 8205, etc. It has a built-in 8206 battery.

[0328] A cable 8205 supplies power from a battery 8206 to the main body 8203. 03 is equipped with a wireless receiver and the like, and image information such as image data received is displayed on a display unit 8204. In addition, the camera installed in the main body 8203 can record the movement of the user's eyeballs and eyelids. The system captures the user's gaze and calculates the coordinates of the user's gaze based on that information. It can be used as an input means.

[0329] Furthermore, the mounting unit 8201 may be provided with a plurality of electrodes at positions that come into contact with the user. The main body 8203 detects the current flowing through the electrodes in response to the movement of the user's eyeball, The device may have a function of recognizing the user's viewpoint. Also, the device may have a function of detecting the current flowing through the electrode. By doing so, the mounting unit 820 may have a function of monitoring the pulse of the user. The sensor 1 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor. The device may have a function of displaying the user's biological information on the display unit 8204. The image displayed on the display unit 8204 is changed according to the movement of the part. Good too.

[0330] The display device of one embodiment of the present invention can be applied to the display portion 8204.

[0331] 25(C) and (D) show the external appearance of the head mounted display 8300. .

[0332] The head mounted display 8300 includes a housing 8301, two display units 8302, and an operation It has a button 8303 and a band-like fastener 8304 .

[0333] The head mounted display 8300 is the same as the head mounted display 8200. In addition to the functions it has, it has two displays.

[0334] By having two displays 8302, the user can see one display per eye. This allows high-resolution images to be displayed even when performing 3D display using parallax. The display portion 8302 is a circular arc with the user's eye as its center. This ensures that the distance from the user's eyes to the display surface is constant. This allows users to see more natural images. Even if the image changes depending on the viewing angle, the image is displayed in the normal direction to the display surface. Because the user's eyes are located in the vicinity, the effect can be virtually ignored, resulting in a more realistic appearance. It is possible to display images with

[0335] The operation button 8303 has a function such as a power button. The display may have a button.

[0336] As shown in FIG. 25(E), a lens is provided between the display unit 8302 and the position of the user's eyes. The lens 8305 allows the user to magnify the display portion 8302. This increases the sense of realism, as shown in Figure 25(E). , and may have a dial 8306 that changes the position of the lens for diopter adjustment.

[0337] The display device of one embodiment of the present invention can be applied to the display portion 8302. Since such a display device has extremely high definition, it is possible to use a lens 8305 as shown in FIG. 25(E). Even when the image is enlarged, the pixels are not visible to the user, providing a more realistic image. It is possible.

[0338] 26(A) to 26(C) show an example in which one display unit 8302 is included. By adopting such a configuration, the number of parts can be reduced.

[0339] The display unit 8302 has two areas, one for the right eye and one for the left eye, each of which is displayed on the left and right sides. Images can be displayed side-by-side, allowing stereoscopic images to be displayed using binocular parallax. It is possible.

[0340] In addition, even if a single image that can be viewed by both eyes is displayed across the entire area of ​​the display unit 8302, This makes it possible to display a panoramic image across both ends of the field of view, It makes the reality even more real.

[0341] As shown in FIG. 26C, a lens 8305 may be provided. Two images may be displayed side by side, or one image may be displayed on the display unit 8302 and the other image may be displayed on the lens. The same image may be viewed with both eyes via the lens 8305.

[0342] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0343] GL scanline SL signal line V0 Wiring ANODE current supply line M1 Transistor M2 Transistor M3 Transistor M4 Transistor M5 Transistor MC Capacitor EL light emitting element CATHODE Common wiring 100 transistors 102 Substrate 104 Insulating layer 106 Conductive layer 108 Oxide semiconductor layer 110 Insulating layer 110t Film Thickness 104t Film thickness 112 Metal oxide layer 116 Insulating Layer 108i Channel Area 108s Source Area 108d Drain region 141a aperture 141b Aperture 120a Conductive layer 120b conductive layer PIX PIX_A Pixel PIX_B Pixel PIX_C Pixel PIX_D Pixel PIX_E Pixel PIX_F Pixel PIX_UL Pixel PIX_UR pixel PIX_LL Pixel PIX_LR Pixel SUB board 151 Conductive layer 152 Conductive layer 153 Conductive Layer 154 Insulating Layer 161 Oxide semiconductor layer 162 Oxide semiconductor layer 163 Insulating Layer 171 Metal oxide layer 172 Metal oxide layer 173 Metal oxide layer 174 Insulating Layer 181 Conductive Layer 182 Conductive Layer 183 Conductive Layer 184 Conductive Layer 185 Conductive Layer 186 Insulating Layer 187 Insulating Layer 188 Insulating Layer 190 Aperture GL_LC scanline GL_EL scanline SL_LC signal line SL_EL signal line M6 Transistor LC Liquid Crystal Device 191 layers 192 Electrode 193 Aperture 10 Display device 11 Pixel section 12 Scanning line driving circuit 13 Signal line driver circuit 15 Terminal section 16a Wiring 16b Wiring GL1 scan line GL2 scan line GL3 Scanline V1 wiring 201 Substrate 202 Substrate 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Spacer 216 Insulating Layer 217 Insulating Layer 218 Insulating Layer 220 Adhesive layer 221 Insulating layer 222 EL layer 223 Electrode 224 Optical adjustment layer 225 Pixel electrode 230a Structure 230b Structure 231 Light blocking layer 232 Colored layer 242 FPC 243 Connection Layer 250 space 251 Transistor 252 Transistor 253 Capacitive element 254 Light emitting element 255 transistors 260 Encapsulating material 261 Adhesive layer 262 Adhesive layer 271 Semiconductor Layer 272 Conductive Layer 273 Conductive Layer 274 Conductive Layer 275 Conductive Layer 276 Insulating Layer 291 Conductive Layer 292 Conductive Layer 293 Conductive Layer 294 Insulating Layer 295 Adhesive layer 296 Board 297 FPC 298 Connection Layer 299 Terminal section 301 Preparation Board 303 Peeling layer 305 Peeling layer 307 Adhesive layer 321 Preparation Substrate 323 Peeling layer 325 Peeling layer 331 Substrate 333 Adhesive layer 341 Substrate 343 Adhesive layer 351 areas 7000 Display 7001 Display section 7100 Mobile Phone 7101 Case 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7107 Camera 7110 Mobile phone 7200 Portable Information Terminal 7201 Case 7202 Operation button 7203 Information 7210 Portable Information Terminal 7300 Television Equipment 7301 Case 7303 Stand 7311 Remote control device 7400 Lighting Equipment 7401 Daibu 7403 Operation switch 7411 Light emitting part 7500 Mobile Information Terminal 7501 Case 7502 Materials 7503 Operation button 7600 Mobile Information Terminal 7601 Case 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Portable Information Terminal 7701 Case 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 Band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 7900 Automobiles 7901 Body 7902 Wheel 7903 Windshield 7904 Light 7905 Fog Lamp 7910 Display section 7911 Display section 7912 Display section 7913 Display section 7914 Display section 7915 Display section 7916 Display section 7917 Display section 8000 Chassis 8001 Display section 8003 Speaker 8101 Case 8102 Case 8103 Display section 8104 Display section 8105 Microphone 8106 Speaker 8107 Operation key 8108 Stylus 8111 Case 8112 Display section 8113 Keyboard 8114 Pointing Device 8200 Head Mounted Display 8201 Mounting part 8202 Lens 8203 Main unit 8204 Display section 8205 Cable 8206 Battery 8300 Head Mounted Display 8301 Case 8302 Display section 8303 Operation button 8304 Fixtures 8305 Lens 8306 Dial 8400 Camera 8401 Case 8402 Display section 8403 Operation button 8404 Shutter button 8406 Lens 8500 Finder 8501 Case 8502 Display section 8503 Button

Claims

1. A pixel includes first to third transistors, a light-emitting element, a signal line, a scanning line, a wiring, and a current supply line, An image signal is input to the signal line, a gate of the first transistor electrically connected to the scan line; a potential corresponding to the image signal is input to a gate of the second transistor via the first transistor; the second transistor has a function of controlling a current supplied to the light emitting element from the current supply line in accordance with the potential; one of a source and a drain of the third transistor is electrically connected to the wiring; the other of the source and the drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element, a first conductive layer having a region disposed on a substrate and functioning as the current supply line; a second conductive layer having an area disposed on the substrate and functioning as the scanning line; a first semiconductor layer having a region disposed above the second conductive layer and having a channel formation region of the first transistor; a second semiconductor layer having a region disposed above the first conductive layer and having a channel formation region of the second transistor and a channel formation region of the third transistor; a third conductive layer having a region disposed above the second semiconductor layer and functioning as a gate of the second transistor; a fourth conductive layer having an area disposed above the first conductive layer and electrically connected to the first conductive layer; a fifth conductive layer having an area disposed above the fourth conductive layer and electrically connected to the fourth conductive layer; a sixth conductive layer having a region disposed above the second semiconductor layer and electrically connected to the second semiconductor layer; a seventh conductive layer having a function as the signal line; an eighth conductive layer having a region disposed above the second semiconductor layer and functioning as the wiring; having each of the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer has a region in contact with an upper surface of a first insulating layer; the sixth conductive layer is electrically connected to a pixel electrode of the light-emitting element; the first conductive layer has a region overlapping with the third conductive layer via the second semiconductor layer; Semiconductor device.

2. A pixel includes first to third transistors, a light-emitting element, a signal line, a scanning line, a wiring, and a current supply line, An image signal is input to the signal line, a gate of the first transistor electrically connected to the scan line; a potential corresponding to the image signal is input to a gate of the second transistor via the first transistor; the second transistor has a function of controlling a current supplied to the light emitting element from the current supply line in accordance with the potential; one of a source and a drain of the third transistor is electrically connected to the wiring; the other of the source and the drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element, a first conductive layer having a region disposed on a substrate and functioning as the current supply line; a second conductive layer having an area disposed on the substrate and functioning as the scanning line; a first semiconductor layer having a region disposed above the second conductive layer and having a channel formation region of the first transistor; a second semiconductor layer having a region disposed above the first conductive layer and having a channel formation region of the second transistor and a channel formation region of the third transistor; a third conductive layer having a region disposed above the second semiconductor layer and functioning as a gate of the second transistor; a fourth conductive layer having an area disposed above the first conductive layer and electrically connected to the first conductive layer; a fifth conductive layer having an area disposed above the fourth conductive layer and electrically connected to the fourth conductive layer; a sixth conductive layer having a region disposed above the second semiconductor layer and electrically connected to the second semiconductor layer; a seventh conductive layer having a function as the signal line; an eighth conductive layer having a region disposed above the second semiconductor layer and functioning as the wiring; having each of the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer has a region in contact with an upper surface of a first insulating layer; the sixth conductive layer is electrically connected to a pixel electrode of the light-emitting element; a channel formation region of the first transistor does not overlap with the first conductive layer; the first conductive layer has a region overlapping with the third conductive layer via the second semiconductor layer; Semiconductor device.

3. A pixel includes first to third transistors, a light-emitting element, a signal line, a scanning line, a wiring, and a current supply line, An image signal is input to the signal line, The gate of the first transistor is always electrically connected to the scanning line, a potential corresponding to the image signal is input to a gate of the second transistor via the first transistor; the second transistor has a function of controlling a current supplied to the light emitting element from the current supply line in accordance with the potential; one of a source and a drain of the third transistor is always electrically connected to the wiring; The other of the source and the drain of the third transistor is always electrically connected to a pixel electrode of the light-emitting element, a first conductive layer having a region disposed on a substrate and functioning as the current supply line; a second conductive layer having an area disposed on the substrate and functioning as the scanning line; a first semiconductor layer having a region disposed above the second conductive layer and having a channel formation region of the first transistor; a second semiconductor layer having a region disposed above the first conductive layer and having a channel formation region of the second transistor and a channel formation region of the third transistor; a third conductive layer having a region disposed above the second semiconductor layer and functioning as a gate of the second transistor; a fourth conductive layer having a region disposed above the first conductive layer and always in electrical contact with the first conductive layer; a fifth conductive layer having a region disposed above the fourth conductive layer and always in electrical contact with the fourth conductive layer; a sixth conductive layer having a region disposed above the second semiconductor layer and always in electrical contact with the second semiconductor layer; a seventh conductive layer having a function as the signal line; an eighth conductive layer having a region disposed above the second semiconductor layer and functioning as the wiring; having each of the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer has a region in contact with an upper surface of a first insulating layer; the sixth conductive layer is always electrically connected to a pixel electrode of the light-emitting element, the first conductive layer has a region overlapping with the third conductive layer via the second semiconductor layer; Semiconductor device.

4. A pixel includes first to third transistors, a light-emitting element, a signal line, a scanning line, a wiring, and a current supply line, An image signal is input to the signal line, The gate of the first transistor is always electrically connected to the scanning line, a potential corresponding to the image signal is input to a gate of the second transistor via the first transistor; the second transistor has a function of controlling a current supplied to the light emitting element from the current supply line in accordance with the potential; one of a source and a drain of the third transistor is always electrically connected to the wiring; The other of the source and the drain of the third transistor is always electrically connected to a pixel electrode of the light-emitting element, a first conductive layer having a region disposed on a substrate and functioning as the current supply line; a second conductive layer having an area disposed on the substrate and functioning as the scanning line; a first semiconductor layer having a region disposed above the second conductive layer and having a channel formation region of the first transistor; a second semiconductor layer having a region disposed above the first conductive layer and having a channel formation region of the second transistor and a channel formation region of the third transistor; a third conductive layer having a region disposed above the second semiconductor layer and functioning as a gate of the second transistor; a fourth conductive layer having a region disposed above the first conductive layer and always in electrical contact with the first conductive layer; a fifth conductive layer having a region disposed above the fourth conductive layer and always in electrical contact with the fourth conductive layer; a sixth conductive layer having a region disposed above the second semiconductor layer and always in electrical contact with the second semiconductor layer; a seventh conductive layer having a function as the signal line; an eighth conductive layer having a region disposed above the second semiconductor layer and functioning as the wiring; having each of the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer has a region in contact with an upper surface of a first insulating layer; the sixth conductive layer is always electrically connected to a pixel electrode of the light-emitting element, a channel formation region of the first transistor does not overlap with the first conductive layer; the first conductive layer has a region overlapping with the third conductive layer via the second semiconductor layer; Semiconductor device.

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