Semiconductor Device

Abstract

To provide a liquid crystal display device suitable for a thin film transistor using an oxide semiconductor.SOLUTION: In a liquid crystal display device having a thin film transistor including an oxide semiconductor layer, a film having a function of attenuating light intensity of transmitting visible light is used for an interlayer film which at least covers the oxide semiconductor layer. As the film having the function of attenuating light intensity of the transmitting visible light, a colored layer can be used, or a chromatic translucent resin layer may be used. Alternatively, an interlayer film is formed to include a chromatic translucent resin layer and a light-shielding layer, and the light-shielding layer may be used as a film having a function of attenuating light intensity of transmitting visible light. One of a pixel electrode layer and a common electrode layer, formed on the upper side, has an opening pattern, and the other formed on the lower side is tabular.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a liquid crystal display device using an oxide semiconductor and a manufacturing method thereof. [Background technology]

[0002] As typified by liquid crystal display devices, thin film transistors formed on flat plates such as glass substrates They are made of amorphous silicon and polycrystalline silicon. Thin-film transistors using GaN have low field-effect mobility, but they are suitable for enlarging the area of ​​glass substrates. On the other hand, thin film transistors using polycrystalline silicon have a field effect mobility of Although it is expensive, it requires a crystallization process such as laser annealing, which is necessary for enlarging the area of ​​glass substrates. It has the characteristic that it is not necessarily suitable for all applications.

[0003] In response to this, thin-film transistors are being fabricated using oxide semiconductors, and they are being used in electronic devices and optical devices. For example, zinc oxide and In-GaAs films are used as oxide semiconductors. Thin-film transistors are fabricated using a-Zn-O oxide semiconductors, and used as switches for image display devices. Technologies used in switching elements and the like are disclosed in Patent Documents 1 and 2.

[0004] Thin film transistors with a channel formation region in an oxide semiconductor are made of amorphous silicon. The oxide semiconductor film has a higher field effect mobility than the thin film transistors that use the oxide semiconductor film. Film formation is possible at temperatures below 300℃ using methods such as sputtering, and polycrystalline silicon The manufacturing process is simpler than that of thin film transistors using

[0005] Oxide semiconductors are transparent semiconductors that transmit light with wavelengths in the visible light range, making them ideal for use in display device pixels. It is said that use of this material makes it possible to achieve a large aperture.

[0006] Using such oxide semiconductors, thin film transistors can be formed on glass substrates, plastic substrates, etc. It is expected that this technology will be applied to display devices. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2007-123861 A [Patent Document 2] JP 2007-96055 A Summary of the Invention [Problem to be solved by the invention]

[0008] Therefore, it is an object of the present invention to provide a liquid crystal display device suitable for thin film transistors using oxide semiconductors. The purpose is. [Means for solving the problem]

[0009] In a liquid crystal display device having a thin film transistor including an oxide semiconductor layer, The interlayer film covering the nitride semiconductor layer is a film that has the function of attenuating the light intensity of the visible light that passes through it. The film having the function of attenuating the light intensity of transmitted visible light is preferably made of a material other than an oxide semiconductor layer. A film with low optical transmittance for visible light. A film that has the function of attenuating the optical intensity of the visible light that passes through it. For example, a colored layer can be used, and a transparent resin layer having a chromatic color can be used. The interlayer film includes a transparent resin layer of a different color and a light-shielding layer, and has the function of attenuating the light intensity of the visible light that passes through. A light-shielding layer may be used as the film having the function.

[0010] When a colored layer of a chromatic light-transmitting resin layer is used as an interlayer film provided on a thin film transistor, The intensity of light incident on the semiconductor layer of a thin-film transistor is reduced without reducing the aperture ratio of the pixel. This can reduce the fluctuation in the electrical characteristics of thin film transistors caused by the photosensitivity of oxide semiconductors. The transparent resin layer of a chromatic color is preferably a color filter layer. When the color filter layer is provided on the opposing substrate side, the thin film transistor can be used as a It is difficult to accurately align the pixel area with the element substrate on which the resistor is formed, and this can result in a loss of image quality. However, since the interlayer film is formed directly on the element substrate as a color filter layer, more precise The formation area can be controlled, and it can also handle pixels with fine patterns. The same insulating layer serves as the color filter layer, simplifying the process and enabling the LCD display to be manufactured at a lower cost. It will be possible to create a display device.

[0011] In addition, as a technology to realize a wide viewing angle, an electric field roughly parallel to the substrate (i.e., horizontal direction) is used. This method controls the gradation by generating a current that moves the liquid crystal molecules in a plane parallel to the substrate. One such method is FFS (Fringe Field Switching) mode. The electrode configuration used in the conventional method can be applied.

[0012] In the horizontal electric field mode shown in the FFS mode, a flat first electrode layer (e.g. For example, a pixel electrode layer in which the voltage is controlled for each pixel, and an opening that overlaps the electrode A second electrode layer having a pattern (for example, a common electrode layer to which a common voltage is supplied to all pixels) is formed. The liquid crystal is controlled by applying an electric field between the pixel electrode layer and the common electrode layer. A horizontal electric field is applied to the liquid crystal, and the liquid crystal molecules can be controlled using this electric field. The viewing angle is widened because the crystal molecules can be controlled in a direction parallel to the substrate. This makes it possible to provide a liquid crystal display device with higher image quality.

[0013] Chromatic colors are colors other than achromatic colors such as black, gray, and white. The transparent resin layer of the chromatic color is a color filter. In order to function as a filter, it is made of a material that transmits only the colored light. As the chromatic colors, red, green, blue, etc. can be used. Also, cyan, magenta, etc. can be used. The term "transmitting only colored light" refers to transmitting only colored light. The light passing through the colored light-transmitting resin layer has a peak at the wavelength of the chromatic light. This is what we should do.

[0014] The colored transparent resin layer functions as a color filter layer. It is advisable to appropriately control the optimum film thickness, taking into consideration the relationship between the concentration and the light transmittance. In the case of laminating thin films, if at least one layer is a transparent resin layer of a chromatic color, it is called a color filter. It can function as a.

[0015] When the film thickness varies depending on the chromatic color or when there are irregularities due to thin film transistors Then, an insulating layer that transmits light with wavelengths in the visible light region (so-called colorless and transparent) is laminated, and the interlayer film surface is The interlayer film may be planarized. Increasing the planarization of the interlayer film will increase the surface area of ​​the pixel electrode layer and the common electrode layer formed thereon. The layer coverage is good and the gap (film thickness) of the liquid crystal layer can be made uniform, This improves the visibility of the liquid crystal display device, enabling higher image quality.

[0016] When a light-shielding layer (black matrix) is used as an interlayer film on a thin-film transistor, The optical layer can block the incidence of light on the semiconductor layer of the thin-film transistor, so the oxide semiconductor This has the effect of preventing and stabilizing the electrical characteristics of the thin film transistor from fluctuating due to the photosensitivity of the conductor. In addition, the light-shielding layer can also prevent light from leaking into adjacent pixels, resulting in higher contrast. This makes it possible to realize high-definition and high-reliability liquid crystal display devices. can be achieved.

[0017] Therefore, the element layer, the pixel electrode layer, the common electrode layer, and the interlayer film (the chromatic light-transmitting resin layer) are the same. The pixel electrode is formed on a substrate and sealed by the opposing substrate with a liquid crystal layer interposed therebetween. The pixel electrode layer and the common electrode layer are arranged to be laminated with an insulating film (or an interlayer film) interposed therebetween. Either the layer or the common electrode layer is formed on the lower side (the side farther from the liquid crystal layer) and is a flat plate. The other is formed on the upper side (closer to the liquid crystal layer) and has various opening patterns. In this specification, the shape of the liquid crystal layer is a shape including a bent portion and a branched comb shape. The electrode layer formed on the lower layer (closer to the daughter board) is called the first electrode layer, and the first electrode layer is flat. The electrode layer is a plate-shaped electrode. On the other hand, the electrode formed in the upper layer closer to the liquid crystal layer (farther from the element substrate) The electrode layer is called the second electrode layer, and the second electrode layer is an electrode layer having an opening pattern (slits). The pixel electrode layer and the common electrode layer are formed by a first flat plate-shaped The first electrode layer and the opening pattern (slits) of the second electrode layer are arranged to overlap each other.

[0018] In this specification, the opening pattern (slit) of the pixel electrode layer and the common electrode layer means In addition to patterns with openings in closed spaces, partially open comb-like patterns are also included. Let us assume that.

[0019] In this specification, a thin film transistor, a pixel electrode layer, a common electrode layer, and an interlayer film are formed. The substrate facing the element substrate with the liquid crystal layer interposed therebetween is called an element substrate (first substrate). This is called the facing substrate (second substrate).

[0020] The light-shielding layer can be formed on either the opposing substrate side or the element substrate side of the liquid crystal display device. The effect of improving contrast and stabilizing the thin film transistor can be improved. Region corresponding to the transistor (at least the region overlapping with the semiconductor layer of the thin film transistor) By forming the thin film transistor on the opposite substrate, it is possible to prevent the electrical characteristics of the thin film transistor from fluctuating due to the light incident on the opposite substrate. When the light-shielding layer is formed on the opposing substrate side, the thin-film transistor is The thin film transistor is formed in a region corresponding to the semiconductor layer of the thin film transistor. When the light-shielding layer is formed on the element substrate side, it is necessary to form the light-shielding layer on the thin film transistor (at least the thin film transistor). The light-shielding layer may be formed directly on the semiconductor layer of the transistor (the region covering the semiconductor layer) or via an insulating layer.

[0021] When a light-shielding layer is provided on the opposing substrate, the semiconductor layer of the thin-film transistor may be exposed to light-shielding wiring layers or In some cases, the polarizing layer can block both the light from the element substrate and the light from the opposing substrate. The light-shielding layer does not necessarily have to be formed so as to cover the thin film transistor.

[0022] In one embodiment of the invention disclosed in this specification, an oxide semiconductor layer overlapping with a gate electrode layer is A thin film transistor having a channel forming region, a flat first electrode layer, and an opening pattern. a second electrode layer for connecting the thin film transistor and the second electrode layer; a liquid crystal layer on the interlayer film, the first electrode layer, and the second electrode layer; Either the first electrode layer or the second electrode layer is electrically connected to the thin film transistor. the other is a pixel electrode layer, and the other is a common electrode layer, and the interlayer film is The light-transmitting resin layer is a chromatic color having a low light transmittance, and the chromatic color light-transmitting resin layer is The electrode layer is provided so as to overlap with the electrode layer and to cover the oxide semiconductor layer.

[0023] Another embodiment of the invention disclosed in this specification is a semiconductor device including an oxide semiconductor layer overlapping with a gate electrode layer. A thin film transistor having a channel forming region, a flat first electrode layer, and an opening pattern and a second electrode layer provided between the thin film transistor and the second electrode layer. an interlayer film, and a liquid crystal layer on the interlayer film, the first electrode layer, and the second electrode layer; Either the first electrode layer or the second electrode layer is electrically connected to the thin film transistor. the other is a pixel electrode layer connected to the oxide semiconductor layer; The light-shielding layer includes a light-transmitting resin layer of a chromatic color having a light transmittance lower than that of the oxide. The chromatic light-transmitting resin layer is provided so as to cover the semiconductor layer, and the chromatic light-transmitting resin layer overlaps the pixel electrode layer. It is designed to do so.

[0024] In this specification, the liquid crystal display device is a transmissive type that displays images by transmitting light from a light source. In the case of a liquid crystal display device (or a semi-transmissive liquid crystal display device), at least in the pixel region Therefore, the first substrate and the second substrate that are present in the pixel area through which light passes must be transparent. The substrate, pixel electrode layer, common electrode layer, other insulating films, conductive films, and other thin films included in the element layer are all This makes the film transparent to light in the visible light wavelength range.

[0025] The ordinal numbers such as 1st and 2nd are used for convenience and do not indicate the order of steps or stacking. In addition, the specific names used in this specification are not intended to identify the invention. This does not indicate the

[0026] In this specification, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Generally speaking, electro-optical devices, semiconductor circuits, and electronic devices are all semiconductor devices. Effect of the Invention

[0027] In a liquid crystal display device having a thin film transistor in which a channel is formed using an oxide semiconductor layer, At least the interlayer film covering the oxide semiconductor layer is made of a material that attenuates the light intensity of visible light passing through the interlayer film. By forming the thin film transistor with this structure, the operating characteristics of the thin film transistor can be stabilized without compromising the aperture ratio. It can be done.

[0028] Furthermore, the viewing angle characteristics can be improved, and a liquid crystal display device with higher image quality can be provided. [Brief description of the drawings]

[0029] [Figure 1] 1A and 1B are diagrams illustrating a liquid crystal display device. [Diagram 2] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Diagram 3] 1A and 1B are diagrams illustrating a liquid crystal display device. [Figure 4] 1A and 1B are diagrams illustrating a liquid crystal display device. [Diagram 5] 1A and 1B are diagrams illustrating a liquid crystal display device. [Figure 6] 1A and 1B are diagrams illustrating a liquid crystal display device. [Figure 7] 1A and 1B are diagrams illustrating a liquid crystal display device. [Figure 8] 2A to 2C are diagrams illustrating electrode layers of a liquid crystal display device. [Figure 9] 1A and 1B are diagrams illustrating a liquid crystal display device. [Figure 10] 1A and 1B are diagrams illustrating a liquid crystal display device. [Figure 11] 1A and 1B are diagrams illustrating a liquid crystal display device. [Figure 12] 1A and 1B are diagrams illustrating a liquid crystal display device. [Figure 13] FIG. 1 is an external view showing an example of a television device and a digital photo frame. [Figure 14] FIG. 1 is an external view showing an example of a gaming machine. [Figure 15] FIG. 1 is an external view showing an example of a mobile phone. [Figure 16] FIG. 2 is a diagram illustrating a liquid crystal display module. [Figure 17] 1A and 1B are diagrams illustrating a liquid crystal display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. It is understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should be interpreted as being limited to the following description of the embodiment. In the configuration described below, parts having the same parts or similar functions are not included. The same reference numerals are used in common between different drawings for the corresponding parts, and the repeated explanations will be omitted.

[0031] (Embodiment 1) The liquid crystal display device will be described with reference to FIG.

[0032] FIG. 1(A) is a plan view of a liquid crystal display device, showing one pixel. FIG. 1(B) is a plan view of a liquid crystal display device, showing one pixel. 1(A) is a cross-sectional view taken along line X1-X2.

[0033] In FIG. 1A, a plurality of source wiring layers (including the wiring layer 405a) are arranged in parallel to each other ( The gate wiring layers are arranged in a vertical direction and spaced apart from each other. The source electrode layer 401 extends in a direction substantially perpendicular to the source wiring layer (the left-right direction in the figure), The common wiring layer (common electrode layer) is arranged so as to be spaced apart from each other. The gate electrodes are arranged adjacent to the wiring layers and are aligned in a direction roughly parallel to the gate wiring layers. The source wiring layer and the source wiring layer are connected in a direction substantially perpendicular to each other (horizontal direction in the figure). A generally rectangular space is enclosed by the common wiring layer (common electrode layer) and the gate wiring layer. In this space, the pixel electrode layer and the common electrode layer of the liquid crystal display device are arranged. The thin film transistor 420 that drives the pixel electrode layer is located in the upper left corner of the figure. A plurality of thin film transistors are arranged in a matrix.

[0034] In the liquid crystal display device of FIG. 1, a second electrode layer electrically connected to the thin film transistor 420 446 functions as a pixel electrode layer, and a first electrode layer 447 electrically connected to a common wiring layer is It functions as a common electrode layer. As shown in FIG. The common electrode layer 409 also serves as a common wiring layer, and adjacent pixels are electrically connected by the common electrode layer 409. A capacitance is formed by the pixel electrode layer and the common electrode layer. can be operated in a floating state (electrically isolated state), but The flip potential is preferably near the common potential (the intermediate potential of the image signal sent as data). It may be set to a level where no car occurs.

[0035] An electric field is generated parallel to the substrate (i.e., in the horizontal direction), and the liquid crystal molecules are aligned in a plane parallel to the substrate. The method uses a pixel to control the gradation. The electrode configuration used in the FFS mode can be applied.

[0036] In the horizontal electric field mode shown in the FFS mode, a flat first electrode layer (e.g. For example, a pixel electrode layer in which the voltage is controlled for each pixel, and an opening pattern below the pixel electrode layer. A second electrode layer having an aperture pattern (for example, a common electrode layer to which a common voltage is supplied to all pixels) Therefore, on the first substrate 200, one side is a pixel electrode layer, and the other side is a common electrode layer. A first electrode layer and a second electrode layer are formed, and the pixel electrode layer and the common electrode layer are formed by an insulating film. The pixel electrode layer and the common electrode layer are arranged so as to be stacked with an insulating layer (or an interlayer insulating layer) interposed therebetween. One is formed downward and is flat, the other is formed upward and has various The first electrode layer 44 has an opening pattern and has a shape including bent portions and a branched comb shape. The second electrode layer 446 and the second electrode layer 447 are arranged in the same shape and do not overlap each other in order to generate an electric field between the electrodes. It shall be placed.

[0037] In this specification, the electrode layer formed in the lower layer farther from the liquid crystal layer (closer to the element substrate) is referred to as the first electrode layer. The first electrode layer is a flat electrode layer. The electrode layer formed on the upper layer (farther from the opening) is called the second electrode layer, and the second electrode layer is The pixel electrode layer and the common electrode layer are electrodes with turns (slits). In order to generate a magnetic field, a flat first electrode layer and an opening pattern (slits) on the second electrode layer are In addition, the pixel electrode layer and the common electrode layer are omitted in FIG. It is.

[0038] The liquid crystal is controlled by applying an electric field between the pixel electrode layer and the common electrode layer. The electric field is applied in the direction parallel to the substrate, and the liquid crystal molecules can be controlled by the electric field. The viewing angle is widened because the aligned liquid crystal molecules can be controlled in a direction parallel to the substrate.

[0039] Examples of the first electrode layer 447 and the second electrode layer 446 are shown in FIG. In this manner, the first electrode layers 447a to 447d and the second electrode layers 446a to 446d overlap each other. The first electrode layers 447a to 447d and the second electrode layers 446a to 447c are arranged such that An insulating film is formed between the first electrode layers 447a to 447d and the second electrode layers 447a to 447d. Then, two electrode layers 446a to 446d are formed.

[0040] As shown in the top views of FIGS. 8A to 8D, various The second electrode layers 446a to 446d are formed in various patterns. In A), the second electrode layer 446a on the first electrode layer 447a has a bent L-shape. In FIG. 8B, the second electrode layer 446b on the first electrode layer 447b has a concentric shape. In FIG. 8C, the second electrode layer 446c on the first electrode layer 447c has a comb-like shape. In FIG. 8D, the second electrode layer 44 on the first electrode layer 447d is 6d has a comb-like shape.

[0041] The thin film transistor 420 is an inverted staggered thin film transistor, and is formed on a substrate having an insulating surface. A gate electrode layer 401, a gate insulating layer 402, a semiconductor layer 40 3. n which functions as a source region or a drain region + Layers 404a, 404b, source electrode The first electrode layer 4 includes wiring layers 405a and 405b which function as a drain electrode layer. 47 is formed on the first substrate 441 in the same layer as the gate electrode layer 401, It is a flat electrode layer.

[0042] An insulating film 407 is provided to cover the thin film transistor 420 and to be in contact with the semiconductor layer 403. An interlayer film 413 is provided on the insulating film 407, and a second insulating film having an opening pattern is formed on the interlayer film 413. Therefore, the first electrode layer 447 and the second electrode layer 446 are formed. The gate insulating layer 402, the insulating film 407, and the interlayer film 413 are disposed so as to overlap each other. It is being done.

[0043] In the liquid crystal display device of FIG. 1, the interlayer film 413 has a function of attenuating the light intensity of the visible light passing therethrough. A chromatic light-transmitting resin layer 417 is used as a film for transmitting light. The visible light transmittance is lower than the visible light transmittance of the semiconductor layer 403 which is an oxide semiconductor layer.

[0044] As the interlayer film 413 provided on the thin film transistor 420, a chromatic light-transmitting resin layer 417 By using a colored layer, the semiconductor of the thin film transistor 420 can be increased without decreasing the aperture ratio of the pixel. The intensity of light incident on the layer 403 can be attenuated, and the thin film due to the photosensitivity of the oxide semiconductor can be This has the effect of preventing fluctuations in the electrical characteristics of the transistor 420 and stabilizing them. The light-transmitting resin layer 417 can function as a color filter layer. When a filter layer is provided on the opposing substrate, it is necessary to accurately Although it is difficult to align the pixel area and there is a risk of impairing image quality, the interlayer film is Since the pattern is formed directly on the element substrate, more precise control of the formation area is possible, and fine patterns can be formed. It can also be used for pixels. In addition, the interlayer film and the color filter layer can be made of the same insulating layer. Therefore, the process is simplified and the liquid crystal display device can be manufactured at a lower cost.

[0045] Chromatic colors are colors other than achromatic colors such as black, gray, and white, and the colored layer functions as a color filter. In order to achieve this, the material is made of a material that transmits only the light of that color. can be red, green, blue, etc. Also, cyan, magenta, yellow ( The term "transmitting only colored light" means that the colored layer is transparent. This means that the light that passes through has a peak at the wavelength of that chromatic light.

[0046] The chromatic transparent resin layer functions as a colored layer (color filter). It is advisable to appropriately control the film thickness to an optimum value, taking into consideration the relationship between the concentration of the color material and the light transmittance. When laminating multiple thin films, if at least one layer is a chromatic translucent resin layer, It can function as a filter.

[0047] The thickness of the transparent resin layer of the chromatic color may differ depending on the color of the chromatic color, and the thickness of the light-shielding layer, thin-film transistor, etc. When the surface has unevenness caused by the streaks, it transmits light with wavelengths in the visible light range (so-called colorless transparent). (e) An insulating layer may be laminated to flatten the surface of the interlayer film. The pixel electrode layer and the common electrode layer formed on the substrate have good coverage, and the gap (film thickness) of the liquid crystal layer is small. This makes it possible to make the display uniform, improving visibility and enabling higher image quality. become.

[0048] The chromatic light-transmitting resin layer 417 is made of a light-transmitting organic resin, a chromatic pigment, or a dye. The organic resin may be mixed with a pigment or a dye to be used. The resin may be a photosensitive or non-photosensitive resin. The use of such a resist mask is preferable because it reduces the number of resist masks required and simplifies the process. Since the contact hole formed in the interlayer film also has a curvature in its opening shape, It is also possible to improve the coverage of films such as electrode layers formed in the holes.

[0049] The method for forming the interlayer film 413 (chromatic light-transmitting resin layer 417) is not particularly limited. Depending on the application, spin coating, dip coating, spray coating, droplet ejection method (inkjet method, screen We use wet methods such as drift printing, offset printing, etc., and etching methods (draft printing, etc.) as necessary. The desired pattern may be obtained by etching (either light etching or wet etching).

[0050] A liquid crystal layer 444 is provided over the first electrode layer 447 and the second electrode layer 446. The semiconductor device is sealed with a second substrate 442 .

[0051] The first substrate 441 and the second substrate 442 are light-transmitting substrates, and the outer side (the liquid crystal layer 44 Polarizing plates 443a and 443b are provided on the opposite side to the polarizing plate 443a.

[0052] The first electrode layer 447 and the second electrode layer 446 are made of indium oxide containing tungsten oxide. Indium zinc oxide containing tungsten oxide, Indium oxide containing titanium oxide , indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO) , indium zinc oxide, indium tin oxide doped with silicon oxide, etc. Any conductive material can be used.

[0053] The first electrode layer 447 and the second electrode layer 446 are made of a conductive polymer. The conductive composition may be used to form the conductive film. The formed pixel electrode has a sheet resistance of 10,000 Ω / □ or less and is transparent at a wavelength of 550 nm. It is preferable that the resistance of the conductive polymer contained in the conductive composition is 70% or more. It is preferable that the resistivity is 0.1 Ω·cm or less.

[0054] As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or or a derivative thereof, or a copolymer of two or more of these.

[0055] The insulating film serving as a base film is a first substrate 441, a gate electrode layer 401, and a first electrode layer 447. The base film may be provided between the first substrate 441 and the second substrate 442. The function is selected from a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, and a silicon oxynitride film. The gate electrode layer 401 may have a laminate structure of one or more films. The materials are molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, etc. Using metal materials such as zinc and scandium, or alloy materials mainly composed of these, it is possible to form a single layer or The gate electrode layer 401 can be formed by stacking a conductive film having a light-shielding property. As a result, light from the backlight (light incident from the first substrate 441) is incident on the semiconductor layer 403. It is possible to prevent the radiation from entering the

[0056] For example, the gate electrode layer 401 may have a two-layer laminate structure of molybdenum on an aluminum layer. A two-layer structure with a layer of copper on top of a layer of molybdenum, or a two-layer structure with a layer of molybdenum on top of a layer of copper, or The structure is a two-layer structure with a titanium nitride layer or tantalum nitride layer laminated on a copper layer, and a titanium nitride layer and a molybdenum layer. It is preferable to use a two-layer structure in which a tongue layer is laminated with a butene layer. A layer of tungsten or tungsten nitride and an alloy of aluminum and silicon or aluminum Preferably, the titanium alloy is laminated with a titanium nitride or titanium layer.

[0057] The gate insulating layer 402 is formed by depositing silicon oxide using a plasma CVD method, a sputtering method, or the like. A silicon nitride layer, a silicon oxynitride layer, or a silicon nitride oxide layer is formed as a single layer or a stacked layer. The gate insulating layer 402 can be formed by using an organic silane gas. It is also possible to form a silicon oxide layer by the CVD method used in the past. is ethyl silicate (TEOS: chemical formula Si(OC2H5)4), tetramethylsilane (TM S: Chemical formula Si(CH3)4), tetramethylcyclotetrasiloxane (TMCTS), Octamethylcyclotetrasiloxane (OMCTS), Hexamethyldisilazane (HMD S), triethoxysilane (SiH(OC2H5)3), trisdimethylaminosilane ( Silicon-containing compounds such as SiH(N(CH3)2)3) can be used.

[0058] Before forming an oxide semiconductor film to be used as the semiconductor layer 403, argon gas was introduced into the preheater. Reverse sputtering is performed to generate plasma, and dust adhering to the surface of the gate insulating layer is removed. It is preferable that the argon atmosphere be replaced by nitrogen, helium, or the like. Alternatively, the treatment may be performed in an atmosphere in which oxygen, hydrogen, N2O, etc. are added to an argon atmosphere. It may be performed in an argon atmosphere to which Cl2, CF4, etc. have been added.

[0059] In this specification, the oxide semiconductor is InMO3(ZnO). m A thin film expressed as (m>0) The thin film transistor 420 is preferably made of InMO3(ZnO). m (m>0) A thin film containing M is formed and used as the semiconductor layer 403. a), iron (Fe), nickel (Ni), manganese (Mn) and cobalt (Co). It indicates one or more metallic elements selected from the group consisting of metal elements. For example, M can be Ga. In addition, the above metal elements other than Ga may be included, such as Ga and Ni or Ga and Fe. In addition, in the above oxide semiconductor, in addition to the metal element contained as M, F is contained as an impurity element. e, Ni and other transition metal elements, or oxides of said transition metals. For example, an In-Ga-Zn-O based non-single crystal film can be used as the oxide semiconductor layer.

[0060] InMO3(ZnO) m (m>0) In the film (layer), M is gallium (Ga). In this specification, this thin film is also called an In-Ga-Zn-O based non-single crystal film. The crystal structure of the a-Zn-O non-single crystal film is formed by sputtering and then heat treatment at 200°C. Even if the reaction is performed at temperatures of up to 500°C, typically 300 to 400°C, for 10 to 100 minutes, an amorphous structure is not obtained. The structure is observed by XRD (X-ray diffraction) analysis. The electrical properties of the thin film transistor are also At a port voltage of ±20V, the on / off ratio is 10 9 In this way, a mobility of 10 or more can be produced. In addition, a target with In2O3:Ga2O3:ZnO=1:1:1 The In-Ga-Zn-O non-single crystal film formed by sputtering has a wavelength of 450 nm or less. It has light sensitivity to

[0061] The semiconductor layer 403 and the n-type + layers 404a, 404 For b, an In-Ga-Zn-O based non-single crystal film can be used. + Layer 404a, 4 04b is an oxide semiconductor layer having a lower resistance than the semiconductor layer 403. For example, + layer 404a, 404b has n-type conductivity and has an activation energy (ΔE) of 0.01 eV or more and 0.1 eV or less. + The layers 404a and 404b are In-Ga-Zn-O based non-single crystal films. It is assumed that the amorphous component is at least + Layers 404a and 404b The amorphous structure may contain crystal grains (nanocrystals). + Layer 404a, 4 The crystal grains (nanocrystals) in 04b have a diameter of 1 nm to 10 nm, typically 2 nm to 4 nm. It is about m.

[0062] n + By providing layers 404a and 404b, wiring layers 405a and 405b, which are metal layers, are provided. The oxide semiconductor layer 403 is preferably bonded to the SiN layer 401 so as to form a Schottky junction. It also provides thermally stable operation compared to the conventional MOSFET. ), or absorb the carriers in the channel stably (drain side), or arrange a resistance component In order to avoid this at the interface with the line layer, + It is effective to provide a layer. This allows good mobility to be maintained even at a high drain voltage.

[0063] The first In-Ga-Zn-O-based non-single crystal film used as the semiconductor layer 403 is + layer 404 The deposition conditions for the second In-Ga-Zn-O-based non-single crystal film used as 404a and 404b are the same. For example, the oxygen gas flow rate under the film formation conditions of the second In-Ga-Zn-O-based non-single crystal film is The deposition conditions for the first In-Ga-Zn-O system non-single crystal film were determined based on the ratio of the amount of argon gas to the flow rate of the argon gas. The ratio of oxygen gas flow rate in the second In-Ga-Z The conditions for forming the nO-based non-single crystal film are as follows: under a rare gas (argon, helium, etc.) atmosphere (or or oxygen gas 10% or less, argon gas 90% or more), and the first In-Ga-Zn-O The deposition conditions for the non-single crystal film are as follows: under oxygen atmosphere (or oxygen gas flow rate is equal to argon gas flow rate). (equal to or greater than).

[0064] For example, the first In-Ga-Zn-O based non-single crystal film used as the semiconductor layer 403 has a diameter of An 8-inch oxide semiconductor target containing In, Ga, and Zn (In2O3:Ga2O 3:ZnO=1:1:1) was used, the distance between the substrate and the target was 170 mm, and the pressure The film is formed under 0.4 Pa, a direct current (DC) power supply of 0.5 kW, and an argon or oxygen atmosphere. A pulsed direct current (DC) power supply is preferable because it reduces dust and makes the film thickness distribution uniform. The thickness of the first In-Ga-Zn-O based non-single crystal film is preferably 5 nm to 200 nm. .

[0065] On the other hand, n +The second In-Ga-Zn-O based non-single crystal film used as the layers 404a and 404b The target used was In2O3:Ga2O3:ZnO=1:1:1, and the deposition conditions were The pressure was 0.4 Pa, the power was 500 W, the deposition temperature was room temperature, and the argon gas flow rate was The film is formed by sputtering with 40sccm of oxygen introduced. The size of the film is 1nm to 10nm immediately after the film is formed. In-Ga-Zn-O type non-single crystal film containing crystal grains may be formed. Get component ratio, deposition pressure (0.1 Pa to 2.0 Pa), power (250 W to 3000 W: 8 inches φ), temperature (room temperature to 100℃), reactive sputtering deposition conditions, etc. are adjusted appropriately. By this, the presence or absence of crystal grains, the density of crystal grains, and the diameter size can be adjusted in the range of 1 nm to 10 nm. The thickness of the second In-Ga-Zn-O based non-single crystal film is 5 nm to 20 nm. m. Of course, if the film contains crystal grains, the size of the crystal grains contained in the film will exceed the film thickness. The thickness of the second In-Ga-Zn-O based non-single crystal film is set to 5 nm.

[0066] There are two types of sputtering: RF sputtering, which uses a high-frequency power source for the sputtering power supply, and DC sputtering. There is also the pulsed DC sputtering method, which applies a pulsed bias. The DC sputtering method is mainly used for depositing insulating films, while the DC sputtering method is mainly used for depositing metal films. It is used in.

[0067] There are also multi-target sputtering devices that can accommodate multiple targets of different materials. The equipment can deposit layers of different materials in the same chamber, or multiple types of films in the same chamber. It is also possible to form a film by discharging two or more materials at the same time.

[0068] Also, a sputtering apparatus using a magnetron sputtering method equipped with a magnet mechanism inside the chamber and ECR sputtering using plasma generated by microwaves without glow discharge. There is a sputtering apparatus that uses this method.

[0069] In addition, in a film formation method using a sputtering method, a target material and a sputtering gas component are mixed during film formation. Reactive sputtering is a method of forming thin films of compounds by chemically reacting them with each other, and There is also a bias sputtering method in which a voltage is also applied to the substrate.

[0070] Semiconductor layer, n + In the process of fabricating the wiring layer, etching is used to process the thin film into the desired shape. The etching process uses dry etching or wet etching. It is possible.

[0071] The etching gas used in dry etching is a gas containing chlorine (chlorine-based gas, e.g. For example, chlorine (Cl2), boron chloride (BCl3), silicon chloride (SiCl4), carbon tetrachloride (CC l4) etc.) are preferred.

[0072] In addition, gases containing fluorine (fluorine-based gases, such as carbon tetrafluoride (CF4) and sulfur fluoride (SF 6), nitrogen fluoride (NF3), trifluoromethane (CHF3), etc.), hydrogen bromide (HBr ), oxygen (O2), and rare gases such as helium (He) and argon (Ar) Additive gases, etc. can be used.

[0073] The etching equipment used for dry etching is the reactive ion etching method (RIE Etching equipment using the ECR (Electron Cyclotron Re sonance) and ICP (Inductively Coupled Plasma) A dry etching apparatus using a high density plasma source such as I Compared to CP etching equipment, dry etching is easier to achieve uniform discharge over a wide area. The upper electrode of the device is grounded, and a 13.56MHz high-frequency power supply is connected to the lower electrode. In addition, a 3.2MHz low-frequency power source was connected to the lower electrode. Capacitively Coupled Plasma (CAP) mode etching equipment For example, the ECCP mode etching equipment can be used to etch 10th generation This also makes it possible to accommodate substrates larger than 3 m.

[0074] In order to etch the desired shape, the etching conditions (applied to the coil-shaped electrode) The amount of power supplied to the electrode on the substrate side, the amount of power applied to the electrode on the substrate side, the temperature of the electrode on the substrate side, etc. are appropriately adjusted.

[0075] The etching solution used for wet etching is a mixture of phosphoric acid, acetic acid, and nitric acid. Ammonia peroxide water (hydrogen peroxide:ammonia:water=5:2:2) can be used. In addition, ITO07N (manufactured by Kanto Chemical Co., Ltd.) may also be used.

[0076] In addition, the etching solution after wet etching is washed away together with the etched material. The waste etching solution containing the removed material is purified to remove the contained material. The indium, etc. contained in the oxide semiconductor layer may be reused from the waste liquid after the etching. By recovering and reusing materials, resources can be used more effectively and costs can be reduced. .

[0077] In order to etch the desired shape, the etching conditions (etching Adjust the etching conditions (liquid, etching time, temperature, etc.) as appropriate.

[0078] The material of the wiring layers 405a and 405b is selected from Al, Cr, Ta, Ti, Mo, and W. The above elements, or alloys containing the above elements, or alloy films of combinations of the above elements In addition, when heat treatment is performed at 200°C to 600°C, It is preferable to give the conductive film heat resistance so that it can withstand high temperatures. Aluminum alone has poor heat resistance and is easily corroded. However, due to problems such as heat resistance, it is formed in combination with a heat-resistant conductive material. Examples of heat-resistant conductive materials include titanium (Ti), tantalum (Ta), and tungsten (W). , Molybdenum (Mo), Chromium (Cr), Nd (Neodymium), Sc (Scandium) Selected elements or alloys containing the above elements or combinations of the above elements It is formed of a gold film or a nitride containing the above-mentioned elements as components.

[0079] Gate insulating layer 402, semiconductor layer 403, n + Layer 404a, 404b, wiring layer 405a, 4 05b may be formed continuously without being exposed to the atmosphere. By continuously forming the film, the film is not contaminated by atmospheric components or airborne contaminant impurity elements. Since it is possible to form each lamination interface, the variation in thin film transistor characteristics can be reduced. This can be done.

[0080] The semiconductor layer 403 is a semiconductor layer that is only partially etched and has a groove (concave portion). do.

[0081] Semiconductor layer 403, n +The layers 404a and 404b are heated at 200°C to 600°C, typically 300°C. For example, heat treatment at 350°C for 1 hour in a nitrogen atmosphere is recommended. This heat treatment causes the semiconductor layers 403, + In-G forming layers 404a and 404b This heat treatment (photo-annealing) causes rearrangement at the atomic level in a-Zn-O oxide semiconductors. The semiconductor layer 403, n + The movement of carriers in the layers 404a and 404b The above heat treatment is important because it can release the strain that inhibits the growth of the crystal. Conductor layer 403, n + There is no particular limitation as long as it is after the layers 404a and 404b are formed.

[0082] In addition, oxygen radical treatment may be performed on the exposed recesses of the semiconductor layer 403. The decalcification can be carried out under an atmosphere of O2, N2O, N2 containing oxygen, He, Ar, etc. It is also preferable to carry out the treatment under an atmosphere containing Cl2 and CF4. The radical treatment is preferably carried out without applying a bias voltage to the first substrate 441 side.

[0083] The structure of the thin film transistor formed in the liquid crystal display device is not particularly limited. The transistor may have a single gate structure in which one channel is formed, or two A double gate structure in which three gates are formed or a triple gate structure in which three gates are formed may be used. The transistors in the peripheral driver circuit area are also of single-gate structure, double-gate structure or A ripple gate structure may also be used.

[0084] Thin-film transistors are classified into top-gate type (e.g., staggered type, coplanar type), bottom-gate type, type (e.g., inverted staggered type, inverted coplanar type), or gate insulating films above and below the channel region In dual gate and other structures having two gate electrode layers arranged with a gap between them, This can also be applied.

[0085] In addition, an alignment film and optical films such as a polarizing plate, a retardation plate, and an anti-reflection film may be provided as appropriate. For example, circularly polarized light produced by a polarizing plate and a retardation plate may be used. A light source, a side light, etc. may also be used.

[0086] The insulating film 407 covering the thin film transistor 420 is an inorganic insulating film formed by a dry method or a wet method. For example, an organic insulating film obtained by a CVD method or a sputtering method can be used. Silicon nitride film, silicon oxide film, silicon oxynitride film, aluminum oxide film, tungsten oxide film, etc. In addition, acrylic, polyimide, benzocyclobutene, etc. can be used. In addition to the above organic materials, organic materials such as polyamide and epoxy can be used. Low dielectric constant materials (low-k materials), siloxane resins, PSG (phosphorus glass), BPSG (Phosphorus boron glass) and the like can be used.

[0087] Siloxane-based resin is a type of Si-OS formed using siloxane-based materials as starting materials. The siloxane resin corresponds to a resin containing an i bond. Alternatively, the organic group may have a fluoro group. The siloxane resin is applied to form a film, and is then baked to form an insulating film 407. It can be used as:

[0088] In addition, the insulating film 407 is formed by stacking a plurality of insulating films made of these materials. For example, a structure in which an organic resin film is laminated on an inorganic insulating film may be used.

[0089] As the liquid crystal material of the liquid crystal layer 444, various liquid crystals can be used. , Thermotropic liquid crystal, Low molecular weight liquid crystal, Polymer liquid crystal, Discotic liquid crystal, Ferroelectric liquid crystal, An antiferroelectric liquid crystal or the like may be appropriately selected and used.

[0090] In this specification, the liquid crystal display device is a transmissive type that displays images by transmitting light from a light source. In the case of a liquid crystal display device (or a semi-transmissive liquid crystal display device), at least in the pixel region Therefore, the first substrate and the second substrate that are present in the pixel area through which light passes must be transparent. The substrate, pixel electrode layer, common electrode layer, other insulating films, conductive films, and other thin films included in the element layer are all This makes the film transparent to light in the visible light wavelength range.

[0091] The first substrate 441 and the second substrate 442 are made of barium borosilicate glass or aluminoborosilicate glass. A glass substrate such as an acid glass substrate, a quartz substrate, a plastic substrate, or the like can be used.

[0092] Also, a resist having regions of multiple thicknesses (typically two types) formed by a multi-tone mask is used. By using a photomask, the number of resist masks can be reduced, simplifying the process and reducing costs. Cost reduction is possible.

[0093] To provide a liquid crystal display device with higher image quality by improving contrast and viewing angle characteristics. Moreover, the liquid crystal display device can be produced at lower cost and with higher productivity.

[0094] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0095] (Embodiment 2) Another embodiment of the liquid crystal display device is shown in FIG. 3. In detail, a flat first electrode formed on the lower layer The first electrode layer is used as a pixel electrode layer, and the second electrode layer having an opening pattern formed on the upper layer is used as a common electrode. The following shows an example of a liquid crystal display device using the same layer as in the first embodiment. Similar materials and manufacturing methods can be applied, and details of the same parts or parts having similar functions A detailed explanation will be omitted.

[0096] FIG. 3A is a plan view of a liquid crystal display device, showing one pixel. FIG. 3(A) is a cross-sectional view taken along line X1-X2 of FIG.

[0097] In FIG. 3A, a plurality of source wiring layers (including the wiring layer 405a) are arranged in parallel to each other ( The gate wiring layers are arranged in a vertical direction and spaced apart from each other. The source electrode layer 401 extends in a direction substantially perpendicular to the source wiring layer (the left-right direction in the figure), The common wiring layer 408 is a layer including a plurality of gate wiring layers. The gate electrodes are arranged adjacent to each other and are aligned in a direction substantially parallel to the gate wiring layer, i.e., The source wiring layer and the common wiring layer extend in a direction generally perpendicular to each other (horizontal direction in the figure). The line layer 408 and the gate wiring layer enclose a substantially rectangular space. A pixel electrode layer and a common electrode layer of a liquid crystal display device are disposed. The transistor 420 is located in the upper left corner of the figure. A plurality of the sensors are arranged in a matrix.

[0098] In the liquid crystal display device of FIG. 3, a first electrode layer electrically connected to the thin film transistor 420 447 functions as a pixel electrode layer, and a second electrode layer 446 electrically connected to a common wiring layer is The first electrode layer 447 functions as a common electrode layer. The thin film transistor 420 is electrically connected to the contact hole. The second electrode layer 446 is formed on the gate insulating layer 402, the insulating film 407, and the interlayer film 413. The pixel electrodes are electrically connected to the common wiring layer 408 through the contact holes. A capacitance is formed by the pole layer and the common electrode layer.

[0099] As the interlayer film 413 provided on the thin film transistor 420, a chromatic light-transmitting resin layer 417 By using a colored layer, the semiconductor of the thin film transistor 420 can be increased without decreasing the aperture ratio of the pixel. The intensity of light incident on the layer can be attenuated, and the thin film transistor can be made to function due to the photosensitivity of the oxide semiconductor. This prevents fluctuations in the electrical characteristics of the resistor and stabilizes them. The layer 417 can function as a color filter layer. When the thin film transistor is formed on the substrate side, the pixel region is accurately positioned with respect to the element substrate on which the thin film transistor is formed. Although alignment is difficult and there is a risk of image quality being impaired, the interlayer film is directly attached to the element as a color filter layer. Since it is formed on the substrate side, it is possible to control the formation area more precisely and it is also possible to handle fine pattern pixels. In addition, since the interlayer film and the color filter layer are both made of the same insulating layer, the process is simple. This simplifies the manufacturing process and enables the liquid crystal display device to be manufactured at lower cost.

[0100] To provide a liquid crystal display device with higher image quality by improving contrast and viewing angle characteristics. Moreover, the liquid crystal display device can be produced at lower cost and with higher productivity.

[0101] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0102] (Embodiment 3) Other forms of the liquid crystal display device are shown in Figs. 4 and 7. In detail, the first electrode layer is a thin film transistor. The configuration example shown is one in which the sensor is provided above the sensor. The same materials and manufacturing methods can be applied to the same parts or the same functions. A detailed description of the relevant parts will be omitted.

[0103] FIG. 4(A) and FIG. 7(A) are plan views of a liquid crystal display device, each showing one pixel. 4(B) and 7(B) are cross-sections taken along lines X1-X2 in FIG. 4(A) and FIG. 7(A), respectively. FIG.

[0104] In the plan views of FIG. 4(A) and FIG. 7(A), similarly to the second embodiment, a plurality of source wirings The layers (including the wiring layer 405a) are parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. The gate wiring layers (including the gate electrode layer 401) are arranged in a state in which the source wiring They extend in a direction substantially perpendicular to the layers (the left-right direction in the figure) and are arranged so as to be spaced apart from each other. The common wiring layer 408 is disposed adjacent to each of the multiple gate wiring layers. , a direction approximately parallel to the gate wiring layer, that is, a direction approximately perpendicular to the source wiring layer (the left and right in the figure) The source wiring layer, the common wiring layer 408, and the gate wiring layer are A substantially rectangular space is enclosed in the space, and the pixel electrode layer and the common electrode layer of the liquid crystal display device are disposed in the space. The thin film transistor 420 that drives the pixel electrode layer is located in the upper left corner of the figure. A plurality of pixel electrode layers and thin film transistors are arranged in a matrix. do.

[0105] In the liquid crystal display device of FIG. 4B and FIG. 7B, The flat first electrode layer 447 connected to the common wiring layer 408 functions as a pixel electrode layer. A second electrode layer 446 having an aperture pattern that connects the first and second electrodes functions as a common electrode layer.

[0106] In FIG. 4, the first electrode layer 447 is formed on the insulating film 407. An interlayer film 413 is laminated on the layer 447, and a second electrode layer 446 is formed on the interlayer film 413. In FIG. 4, a capacitance is formed by the first electrode layer and the common electrode layer. There are.

[0107] In FIG. 7, the first electrode layer 447 is formed on the interlayer film 413. An insulating film 416 is laminated on the insulating film 447, and a second electrode layer 446 is formed on the insulating film 416. In FIG. 7, a capacitance is formed by the first electrode layer and the common electrode layer. There are.

[0108] As the interlayer film 413 provided on the thin film transistor 420, a chromatic light-transmitting resin layer 417 By using a colored layer, the semiconductor of the thin film transistor 420 can be increased without decreasing the aperture ratio of the pixel. The intensity of light incident on the layer 403 can be attenuated, and the thin film due to the photosensitivity of the oxide semiconductor can be This has the effect of preventing fluctuations in the electrical characteristics of the transistor 420 and stabilizing them. The light-transmitting resin layer 417 can function as a color filter layer. When a filter layer is provided on the opposing substrate, it is necessary to accurately Although it is difficult to align the pixel area and there is a risk of impairing image quality, the interlayer film is Since the pattern is formed directly on the element substrate, more precise control of the formation area is possible, and fine patterns can be formed. It can also be used for pixels. In addition, the interlayer film and the color filter layer can be made of the same insulating layer. Therefore, the process is simplified and the liquid crystal display device can be manufactured at a lower cost.

[0109] To provide a liquid crystal display device with higher image quality by improving contrast and viewing angle characteristics. Moreover, the liquid crystal display device can be produced at lower cost and with higher productivity.

[0110] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0111] (Embodiment 4) A liquid crystal display device having a light-shielding layer (black matrix) will be described with reference to FIG.

[0112] The liquid crystal display device shown in FIG. 5 is the same as the liquid crystal display device shown in FIGS. 1(A) and 1(B) of the first embodiment. In this example, a light-shielding layer 414 is further formed on the second substrate 442 side, which is the opposing substrate. In addition, the same materials and manufacturing methods as those in the first embodiment can be applied to the same components. Detailed descriptions of identical parts or parts having similar functions will be omitted.

[0113] FIG. 5(A) is a plan view of a liquid crystal display device, and FIG. 5(B) is a cross-sectional view taken along line X1-X2 of FIG. 5(A). 5(A) shows only the element substrate side, and the opposing substrate side The description is omitted.

[0114] A light-shielding layer 414 is formed on the liquid crystal layer 444 side of the second substrate 442, and an insulating layer The light-shielding layer 414 is connected to the thin film transistor 42 via the liquid crystal layer 444. It is preferable to form the insulating layer 10 in a region corresponding to 0 (a region overlapping with the semiconductor layer of the thin film transistor). The light-shielding layer 414 is arranged to cover at least the upper portion of the semiconductor layer 403 of the thin film transistor 420. The first substrate 441 and the second substrate 442 are arranged as shown in FIG. The wire is then fixed in place.

[0115] The visible light transmittance of the light-shielding layer 414 is the same as that of the semiconductor layer 403, which is an oxide semiconductor layer. Lower than transmittance.

[0116] The light-shielding layer 414 is made of a material that reflects or absorbs light and has light-shielding properties. For example, An organic resin can be used, and a pigment is added to a resin material such as a photosensitive or non-photosensitive polyimide. The black resin, carbon black, titanium black, etc. may be mixed to form the color. Alternatively, a light-shielding metal film may be used, such as chromium, molybdenum, nickel, titanium, Cobalt, copper, tungsten, aluminum, or the like may be used.

[0117] The method for forming the light-shielding layer 414 is not particularly limited, and may be a deposition method, a sputtering method, a CVD method, or the like, depending on the material. Dry methods such as spin coating, dip coating, spray coating, and droplet ejection methods (inkjet printing) We use wet methods such as inkjet printing, screen printing, offset printing, etc., and etch as necessary. The desired pattern can be created by etching (dry or wet etching). good.

[0118] The insulating layer 415 is also made of organic resin such as acrylic or polyimide, and is formed by spin coating or various methods. It may be formed by a coating method such as a printing method.

[0119] In this way, by providing a light-shielding layer 414 on the opposing substrate side, the contrast can be improved and a thin film can be obtained. The light-shielding layer 414 can enhance the effect of stabilizing the thin film transistor 42. Since the incident light to the semiconductor layer 403 of the oxide semiconductor layer 403 can be blocked, the photosensitivity of the oxide semiconductor is improved. This prevents the electrical characteristics of the thin film transistor 420 from fluctuating due to the light-shielding layer, and makes the characteristics more stable. 414 can also prevent light leakage into adjacent pixels, resulting in higher contrast and This makes it possible to perform high-definition display, thereby achieving high-definition and high reliability in liquid crystal display devices. It is possible.

[0120] To provide a liquid crystal display device with higher image quality by improving contrast and viewing angle characteristics. Moreover, the liquid crystal display device can be produced at lower cost and with higher productivity.

[0121] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0122] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0123] (Embodiment 5) A liquid crystal display device having a light-shielding layer (black matrix) will be described with reference to FIG.

[0124] A colored layer that acts as a light-shielding layer is also used as a film that has the function of attenuating the light intensity of the transmitted visible light. The liquid crystal display device shown in FIG. 6 may be the same as that shown in FIGS. 1(A) and 1(B) of the first embodiment. In a liquid crystal display device, as a part of the interlayer film 413 on the first substrate 441 side which is an element substrate This is an example in which a light-shielding layer 414 is formed. Therefore, the same applies to the same parts as those in the first embodiment. Detailed descriptions of parts that have the same or similar functions and that can be made using materials and manufacturing methods The explanation will be omitted.

[0125] FIG. 6A is a plan view of the liquid crystal display device, and FIG. 6B is a cross-sectional view taken along line X1-X2 of FIG. 6A. 6(A) shows only the element substrate side, and the opposing substrate side The description is omitted.

[0126] The interlayer film 413 includes a light-shielding layer 414 and a chromatic light-transmitting resin layer 417. The light-shielding layer 414 is The first substrate 441 is disposed on the element substrate, and the thin film transistor 420 (at least The insulating film 407 is formed on the semiconductor layer of the thin film transistor (at least the region covering the semiconductor layer of the thin film transistor). On the other hand, the chromatic light-transmitting resin layer 417 functions as a light-shielding layer for the first The color filter layer is formed in an area overlapping the first electrode layer 447 and the second electrode layer 446. In the liquid crystal display device of FIG. 6B, a part of the second electrode layer 446 is a light-shielding layer. 414, on which a liquid crystal layer 444 is provided.

[0127] The visible light transmittance of the light-shielding layer 414 is the same as that of the semiconductor layer 403, which is an oxide semiconductor layer. Lower than transmittance.

[0128] Since the light-shielding layer 414 is used as an interlayer film, it is preferable to use a black organic resin. For example, photosensitive or non-photosensitive polyimide resin materials are coated with black pigment resin or carbon black. The light-shielding layer 414 may be formed by mixing lac, titanium black, etc. Depending on the application, spin coating, dip coating, spray coating, droplet ejection method (inkjet method, spin coating, Wet printing methods such as clean printing, offset printing, etc., or deposition, sputtering, CV Dry methods such as the D method are used, or etching methods (dry etching or wafer etching) are used as necessary. The desired pattern can then be formed by hot-dip etching.

[0129] A light-shielding layer may be further formed on the opposing substrate side of the liquid crystal display device. The effect of stabilizing the thin film transistor can be improved. The light-shielding layer is formed on the opposing substrate side. In this case, the area corresponding to the thin film transistor through the liquid crystal layer (at least the area of ​​the thin film transistor) If the insulating layer is formed in the thin-film transistor (the region overlapping the semiconductor layer), the insulating layer can be easily irradiated with light incident from the opposing substrate. Fluctuations in the electrical characteristics of the capacitor can be further prevented.

[0130] When a light-shielding layer is formed on the opposing substrate side, the semiconductor layer of the thin film transistor is covered with a light-shielding wiring layer or In some cases, the electrode layer can block both the light from the element substrate and the light from the opposing substrate. The light-shielding layer does not necessarily have to be formed to cover the thin film transistor.

[0131] The light-shielding layer may be laminated on or under a chromatic light-transmitting resin layer. An example of a laminated structure of light-transmitting resin layers of different colors is shown in FIG. 17. FIG. 17(A) and (B) show an element substrate. An element layer 203 is formed on a first substrate 200, and an interlayer film 209 is formed on the element layer 203. The interlayer film 209 is made up of chromatic light-transmitting resin layers 204a, 204b, 204c and A chromatic transparent resin layer 204a including light blocking layers 205a, 205b, 205c, and 205d. , 204b, and 204c are provided with light-shielding layers 205a, 205b, 205c, and 205d, respectively. In addition, in FIG. 17(A) and (B), the pixel electrode layer and the common electrode The layers are omitted.

[0132] A plurality of chromatic colors can be used. For example, in the liquid crystal display device shown in FIG. The light-transmitting resin layer 204a is red, the light-transmitting resin layer 204b is green, and the light-transmitting resin layer 204b is a chromatic color. The layer 204c is a blue colored layer, and a light-transmitting resin layer of a plurality of chromatic colors is used.

[0133] In Fig. 17(A) and (B), a thin film having a thickness smaller than that of the chromatic transparent resin layer is used as the light-shielding layer. This is an example in which a light-shielding layer is laminated above or below a chromatic light-transmitting resin layer. As the light shielding layer, a thin inorganic film (for example, a metal film) having a light shielding property is preferable.

[0134] FIG. 17A shows a structure in which thin light-shielding layers 205a, 205b, 205c, and 205 d are formed, and a chromatic transparent resin is formed on the light-shielding layers 205a, 205b, 205c, and 205d. The layers 204a, 204b, and 204c are laminated. Chromatic colored light-transmitting resin layers 204a, 204b, and 204c are formed on the substrate 03. Thin light-shielding layers 205a, 205b, and 205c are formed on the conductive resin layers 204a, 204b, and 204c. , 205d are laminated on the light-shielding layers 205a, 205b, 205c, and 205d. As shown in FIG. 17B, the element layer, the light-shielding layer, the photoresist layer, and the insulating film 211 are formed. The colored light-transmitting resin layers may be directly laminated, or insulating films may be provided above, below, and between each of them. The structure may be such that

[0135] The sealing materials 202a and 202b are typically of visible light curing, ultraviolet light curing or heat curing. It is preferable to use a curable resin. Representative examples include acrylic resin, epoxy resin, and amine resin. Resins and the like can be used. In addition, photopolymerization initiators (typically ultraviolet rays), heat curing agents, A filler and a coupling agent may be included.

[0136] By providing the light-shielding layer in this manner, the light-shielding layer can effectively prevent the thin film transistor from being damaged without reducing the aperture ratio of the pixel. The photosensitivity of the oxide semiconductor can block the incidence of light on the semiconductor layer 403 of the transistor. This has the effect of preventing and stabilizing the electrical characteristics of the thin film transistor from fluctuating due to light. The layers also prevent light from leaking into adjacent pixels, resulting in higher contrast and precision. This makes it possible to achieve high-definition and high reliability in liquid crystal display devices. It is possible.

[0137] Moreover, the chromatic light-transmitting resin layer 417 can function as a color filter layer. When the color filter layer is provided on the opposing substrate side, the element substrate on which the thin film transistor is formed is However, it is difficult to accurately align the pixel area with the interlayer film, which can cause image quality to deteriorate. The transparent resin layer 417 of a chromatic color is formed directly on the element substrate as a color filter layer. This allows for more precise control of the formation area, and can also accommodate fine pattern pixels. In addition, the interlayer film and the color filter layer are both made of the same insulating layer, which simplifies the process and reduces costs. This makes it possible to fabricate a liquid crystal display device in a simple manner.

[0138] To provide a liquid crystal display device with higher image quality by improving contrast and viewing angle characteristics. Moreover, the liquid crystal display device can be produced at lower cost and with higher productivity.

[0139] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0140] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0141] (Embodiment 6) In the first to fifth embodiments, other examples of thin film transistors that can be applied to liquid crystal displays are shown. Note that the same materials and manufacturing methods are used for the same components as those in the first to fifth embodiments. and detailed descriptions of identical parts or parts having similar functions will be omitted.

[0142] A thin-film transistor in which the source electrode layer, the drain electrode layer, and the semiconductor layer are in contact with each other without an n+ layer. An example of a liquid crystal display device having a transistor is shown in FIG.

[0143] FIG. 10(A) is a plan view of a liquid crystal display device, showing one pixel. FIG. 10(A) is a cross-sectional view taken along line V1-V2 in FIG.

[0144] In the plan view of FIG. 10A, similarly to the first embodiment, a plurality of source wiring layers (wiring layers 405a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. The gate wiring layers (including the gate electrode layer 401) are arranged substantially perpendicular to the source wiring layer. The common wiring extends in the direction of the wiring (the left and right direction in the figure) and is arranged so as to be spaced apart from each other. The line layer (common electrode layer) is disposed adjacent to each of the plurality of gate wiring layers, A direction roughly parallel to the gate wiring layer, that is, a direction roughly perpendicular to the source wiring layer (left and right in the figure) The source wiring layer, the common wiring layer (common electrode layer), and the gate wiring layer are Thus, a substantially rectangular space is enclosed, and in this space, the pixel electrode layer and the common electrode layer of the liquid crystal display device are A thin film transistor 422 that drives the pixel electrode layer is located at the upper left of the figure. The pixel electrode layer and the thin film transistor are arranged in a matrix. It is being done.

[0145] In the liquid crystal display device of FIG. 10, a second electrode electrically connected to the thin film transistor 422 The layer 446 functions as a pixel electrode layer, and the first electrode layer 447 is electrically connected to the common wiring layer. As shown in FIG. 10, the first electrode layer 447 functions as a common electrode layer. The common electrode layer 409 also serves as a common wiring layer, and adjacent pixels are electrically connected by the common electrode layer 409. A capacitance is formed by the pixel electrode layer and the common electrode layer.

[0146] A thin film transistor 422, an interlayer film 413 which is a chromatic light-transmitting resin layer, and a first electrode layer 44 7, and the first substrate 441 on which the second electrode layer 446 is provided and the second substrate 442 are liquid crystal. The crystal layer 444 is sandwiched and fixed therebetween.

[0147] The thin film transistor 422 includes a wiring layer 40 which functions as a source electrode layer and a drain electrode layer. In this configuration, 5a and 405b are in contact with the semiconductor layer 403 without an n+ layer therebetween.

[0148] As the interlayer film 413 provided on the thin film transistor 422, a chromatic light-transmitting resin layer 417 By using a colored layer, the semiconductor of the thin film transistor 422 can be easily formed without decreasing the aperture ratio of the pixel. A thin oxide semiconductor photosensitivity layer 403 can attenuate the intensity of light incident on the layer 403. This has the effect of preventing fluctuations in the electrical characteristics of the film transistor 422 and stabilizing them. The light-transmitting resin layer 417 of a different color can function as a color filter layer. When the filter layer is provided on the opposing substrate, it is necessary to precisely match the element substrate on which the thin film transistor is formed. Although it is difficult to align the pixel area properly and there is a risk of impairing image quality, Since the pattern is formed directly on the element substrate, the formation area can be controlled more precisely, and fine patterns can be formed. In addition, the interlayer film and the color filter layer can be made of the same insulating layer. This simplifies the manufacturing process and enables the liquid crystal display device to be manufactured at a lower cost.

[0149] By improving contrast and viewing angle characteristics and enabling high-speed response, higher image quality and performance are achieved. It is also possible to provide a liquid crystal display device which can be produced at a lower cost. It can be produced with good efficiency.

[0150] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0151] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0152] (Embodiment 7) In the first to fifth embodiments, another example of a thin film transistor applicable to a liquid crystal display device is as follows: This will be explained using FIG.

[0153] FIG. 9(A) is a plan view of a liquid crystal display device, showing one pixel. FIG. 9(B) shows 9(A) is a cross-sectional view taken along line Z1-Z2 of FIG.

[0154] In the plan view of FIG. 9A, similarly to the first embodiment, a plurality of source wiring layers (wiring layer 4 05a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. The gate wiring layers (including the gate electrode layer 401) are substantially perpendicular to the source wiring layers. The common wiring extends in the direction of the wiring (the left and right direction in the figure) and is arranged so as to be spaced apart from each other. The layer (common electrode layer) is disposed adjacent to each of the plurality of gate wiring layers. A direction approximately parallel to the source wiring layer, that is, a direction approximately perpendicular to the source wiring layer (the left-right direction in the figure) The source wiring layer, the common wiring layer (common electrode layer), and the gate wiring layer A substantially rectangular space is enclosed by the insulating film, and the pixel electrode layer and the common electrode layer of the liquid crystal display device are disposed in this space. The thin film transistor 421 that drives the pixel electrode layer is The pixel electrode layer and the thin film transistor are arranged in a matrix. is.

[0155] In the liquid crystal display device of FIG. 9, a second electrode layer electrically connected to the thin film transistor 421 446 functions as a pixel electrode layer, and a first electrode layer 447 electrically connected to a common wiring layer is It functions as a common electrode layer. As shown in FIG. The common electrode layer 409 also serves as a common wiring layer, and adjacent pixels are electrically connected by the common electrode layer 409. A capacitance is formed by the pixel electrode layer and the common electrode layer.

[0156] A thin film transistor 421, an interlayer film 413 which is a chromatic light-transmitting resin layer, and a first electrode layer 44 7, and the first substrate 441 on which the second electrode layer 446 is provided and the second substrate 442 are liquid crystal. The crystal layer 444 is sandwiched and fixed therebetween.

[0157] The thin film transistor 421 is a bottom-gate thin film transistor having an insulating surface. A gate electrode layer 401, a gate insulating layer 402, a source electrode layer 403, a gate insulating layer 404, a gate insulating layer 405, a gate insulating layer 406, a gate insulating layer 407, a gate insulating layer 408, a gate insulating layer 409, a gate insulating layer 410, a gate insulating layer 411, a gate insulating layer 412, a gate insulating layer 413, a gate insulating layer 414, a Wiring layers 405a and 405b functioning as source or drain electrode layers; n functioning as an in-region + The semiconductor layer 403 includes layers 404a and 404b. An insulating film 407 is provided to cover the thin film transistor 421 and to be in contact with the semiconductor layer 403. The semiconductor layer 403 and + The layers 404a and 404b are In-Ga-Zn-O based non-single crystal films. The thin film transistor 421 having such a structure has a mobility of 20 cm 2 / Vs or higher, The S value is less than 0.4V / dec. This enables high-speed operation. The drive circuit (source driver or gate driver) such as the pixel section is placed on the same substrate. It can be formed.

[0158] Before the semiconductor layer 403 is formed by sputtering, the gate insulating layer 402 and the wiring layer 4 Argon gas is introduced into 405a and 405b to generate plasma and perform reverse sputtering. It is preferable to remove any debris adhering to the surface.

[0159] Semiconductor layer 403 and n + The layers 404a and 404b are heated at 200° C. to 600° C., typically 30 It is recommended to perform heat treatment at 0°C to 500°C. For example, heat treatment at 350°C for 1 hour in a nitrogen atmosphere. The timing of this heat treatment is determined based on the semiconductor layer 403 and the n + layers 404a, 404 There is no particular limitation as long as the oxide semiconductor film used in b is formed after the formation of the oxide semiconductor film.

[0160] In addition, the semiconductor layer 403 may be subjected to oxygen radical treatment.

[0161] The thin film transistor 421 has a gate insulating layer in the entire region including the thin film transistor 421. A first substrate 441, which is a substrate having a gate insulating layer 402 and an insulating surface, on which the layer 402 is present. A gate electrode layer 401 is provided between the gate insulating layer 402 and the wiring layer 405a. , 405b, and n + Layers 404a and 404b are provided. 02, wiring layers 405a, 405b, and n + A semiconductor layer 403 is formed on the layers 404a and 404b. Although not shown, wiring layers 405a and 405b are provided on the gate insulating layer 402. In addition to the semiconductor layer 5b, a wiring layer is provided, and the wiring layer extends outward from the outer periphery of the semiconductor layer 403. .

[0162] As the interlayer film 413 provided on the thin film transistor 421, a chromatic light-transmitting resin layer 417 By using a colored layer, the semiconductor of the thin film transistor 421 can be increased without decreasing the aperture ratio of the pixel. The intensity of light incident on the layer 403 can be attenuated, and the thin film due to the photosensitivity of the oxide semiconductor can be This has the effect of preventing fluctuations in the electrical characteristics of the transistor 421 and stabilizing them. The light-transmitting resin layer 417 can function as a color filter layer. When a filter layer is provided on the opposing substrate, it is necessary to accurately Although it is difficult to align the pixel area and there is a risk of impairing image quality, the interlayer film is Since the pattern is formed directly on the element substrate, more precise control of the formation area is possible, and fine patterns can be formed. It can also be used for pixels. In addition, the interlayer film and the color filter layer can be made of the same insulating layer. Therefore, the process is simplified and the liquid crystal display device can be manufactured at a lower cost.

[0163] To provide a liquid crystal display device with higher image quality by improving contrast and viewing angle characteristics. Moreover, the liquid crystal display device can be produced at lower cost and with higher productivity.

[0164] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0165] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0166] (Embodiment 8) In the first to fifth embodiments, other examples of thin film transistors that can be applied to liquid crystal displays are shown. Note that the same materials and manufacturing methods are used for the same components as those in the first to fifth embodiments. and detailed descriptions of identical parts or parts having similar functions will be omitted.

[0167] The source electrode layer, the drain electrode layer and the semiconductor layer are + Thin film with no intervening layer An example of a liquid crystal display device having a transistor is shown in FIG.

[0168] FIG. 11(A) is a plan view of a liquid crystal display device, showing one pixel. FIG. 11(A) is a cross-sectional view taken along line Y1-Y2 in FIG.

[0169] In the plan view of FIG. 11A, similarly to the first embodiment, a plurality of source wiring layers (wiring layers 405a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. The gate wiring layers (including the gate electrode layer 401) are arranged substantially perpendicular to the source wiring layer. The common wiring extends in the direction of the wiring (the left and right direction in the figure) and is arranged so as to be spaced apart from each other. The line layer (common electrode layer) is disposed adjacent to each of the plurality of gate wiring layers, A direction roughly parallel to the gate wiring layer, that is, a direction roughly perpendicular to the source wiring layer (left and right in the figure) The source wiring layer, the common wiring layer (common electrode layer), and the gate wiring layer are Thus, a substantially rectangular space is enclosed, and in this space, the pixel electrode layer and the common electrode layer of the liquid crystal display device are A thin film transistor 423 that drives the pixel electrode layer is located at the upper left of the figure. The pixel electrode layer and the thin film transistor are arranged in a matrix. It is being done.

[0170] In the liquid crystal display device of FIG. 11, a second electrode electrically connected to the thin film transistor 423 The layer 446 functions as a pixel electrode layer, and the first electrode layer 447 is electrically connected to the common wiring layer. As shown in FIG. 11, the first electrode layer 447 functions as a common electrode layer. The common electrode layer 409 also serves as a common wiring layer, and adjacent pixels are electrically connected by the common electrode layer 409. A capacitance is formed by the pixel electrode layer and the common electrode layer.

[0171] A thin film transistor 423, an interlayer film 413 which is a chromatic light-transmitting resin layer, and a first electrode layer 44 7, and the first substrate 441 on which the second electrode layer 446 is provided and the second substrate 442 are liquid crystal. The crystal layer 444 is sandwiched and fixed therebetween.

[0172] The thin film transistor 423 has a gate insulating layer in the entire region including the thin film transistor 423. A first substrate 441, which is a substrate having a gate insulating layer 402 and an insulating surface, on which the layer 402 is present. A gate electrode layer 401 is provided between the gate insulating layer 402 and the wiring layer 405a. , 405b are provided. The gate insulating layer 402, the wiring layers 405a, 405b A semiconductor layer 403 is provided on the gate insulating layer 402. In addition to the wiring layers 455a and 455b, a wiring layer is provided. It extends outward.

[0173] As the interlayer film 413 provided on the thin film transistor 423, a chromatic light-transmitting resin layer 417 By using a colored layer, the semiconductor of the thin film transistor 423 can be easily formed without decreasing the aperture ratio of the pixel. The intensity of light incident on the layer 403 can be attenuated, and the thin film due to the photosensitivity of the oxide semiconductor can be This has the effect of preventing fluctuations in the electrical characteristics of the transistor 423 and stabilizing them. The light-transmitting resin layer 417 can function as a color filter layer. When a filter layer is provided on the opposing substrate, it is necessary to accurately Although it is difficult to align the pixel area and there is a risk of impairing image quality, the interlayer film is Since the pattern is formed directly on the element substrate, more precise control of the formation area is possible, and fine patterns can be formed. It can also be used for pixels. In addition, the interlayer film and the color filter layer can be made of the same insulating layer. Therefore, the process is simplified and the liquid crystal display device can be manufactured at a lower cost.

[0174] To provide a liquid crystal display device with higher image quality by improving contrast and viewing angle characteristics. Moreover, the liquid crystal display device can be produced at lower cost and with higher productivity.

[0175] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0176] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0177] (Embodiment 9) In the above-described embodiment, a liquid crystal material exhibiting a blue phase can be used for the liquid crystal layer. A liquid crystal display device using a liquid crystal layer exhibiting a blue phase will be described with reference to FIG.

[0178] 2A to 2D are cross-sectional views of a liquid crystal display device and its manufacturing process.

[0179] In FIG. 2A, an element layer 203 is formed on a first substrate 200 which is an element substrate. An interlayer film 209 is formed on the child layer 203 .

[0180] The interlayer film 209 is made up of the chromatic light-transmitting resin layers 204a, 204b, and 204c and the light-shielding layer 205. a, 205b, 205c, 205d, chromatic transparent resin layers 204a, 204b, The light-shielding layers 205a, 205b, 205c, and 205d are formed between the light-shielding layers 205a, 205b, 205c, and 205d. Note that the pixel electrode layer and the common electrode layer included in the structure are omitted in FIGS. For example, the pixel electrode layer and the common electrode layer can have the structures described in any of the embodiments 1 to 8. The in-plane electric field mode can be applied.

[0181] As shown in FIG. 2B, the first substrate 200 and the second substrate 201, which is an opposing substrate, are liquid crystal substrates. The liquid crystal layer 206 is sandwiched between the two and fixed with sealing materials 202a and 202b. As a method for forming the first substrate 200 and the second substrate 201, a dispenser method (dropping method) or a method for forming the first substrate 200 and the second substrate 201 may be used. A liquid crystal injection method can be used in which the above-mentioned components are bonded together and then liquid crystal is injected using capillary action.

[0182] The liquid crystal layer 206 can be made of a liquid crystal material exhibiting a blue phase. The material has a short response time of less than 1 msec, making it suitable for use in high-speed LCD displays. Performance improvement becomes possible.

[0183] The liquid crystal material exhibiting the blue phase includes liquid crystal and a chiral agent. The chiral agent causes the liquid crystal to have a helical structure. For example, 5% by weight or more of the chiral agent is used to orient the liquid crystal structure and produce a blue phase. A liquid crystal material in which the above are mixed may be used for the liquid crystal layer.

[0184] Liquid crystals include thermotropic liquid crystals, low molecular weight liquid crystals, polymeric liquid crystals, ferroelectric liquid crystals, antiferroelectric liquid crystals, etc. is used.

[0185] The chiral agent is a material that has good compatibility with the liquid crystal and has a strong twisting force. Either the R or S isomer is better, and a racemic mixture with a 50:50 ratio of R and S isomers should not be used. do not have.

[0186] The above liquid crystal material can exhibit a cholesteric phase, a cholesteric blue phase, a smectic phase, etc., depending on the conditions. It exhibits phases such as smectic blue, cubic, chiral nematic, and isotropic phases. .

[0187] The blue phases, cholesteric blue phase and smectic blue phase, have a helical pitch of 50 This is seen in liquid crystal materials that have a relatively short cholesteric or smectic phase of less than 0 nm. The liquid crystal material has a double twisted structure. It has an order smaller than the wavelength of visible light. The orientation order changes when a voltage is applied, resulting in optical modulation. Since the -phase is optically isotropic, it has no viewing angle dependence and does not require the formation of an alignment film. This allows for improved image quality and reduced costs. It also eliminates the need for rubbing the alignment film. Therefore, electrostatic damage caused by the rubbing process can be prevented, and the manufacturing process This reduces defects and damage to the liquid crystal display device during the manufacturing process. In particular, a thin film transistor using an oxide semiconductor layer can improve static Electrical influences cause the electrical characteristics of thin-film transistors to fluctuate significantly and deviate from the design range. Therefore, there is a risk that a liquid crystal display device having a thin film transistor using an oxide semiconductor layer may have a black matrix. It is more effective to use a liquid crystal material in the loose phase.

[0188] In addition, the blue phase is difficult to manifest only in a narrow temperature range. It is preferable to add a photocurable resin and a photopolymerization initiator to the material and perform a polymer stabilization treatment. The polymer stabilization process involves the use of a liquid crystal material that contains a liquid crystal, a chiral agent, a photocurable resin, and a photopolymerization initiator. The material is irradiated with light of a wavelength that reacts with the photocurable resin and the photopolymerization initiator. The stabilization treatment may be performed by irradiating the liquid crystal material exhibiting an isotropic phase with light, or by controlling the temperature to produce a blue phase. For example, the temperature of the liquid crystal layer may be controlled to produce a blue light. The polymer stabilization process is performed by irradiating the liquid crystal layer with light while the phase is expressed. However, the temperature is within +10°C, preferably +5°C, of ​​the phase transition temperature between the blue phase and the isotropic phase. The liquid crystal layer is irradiated with light in a state where the isotropic phase is expressed within a range of 100 nm to perform polymer stabilization treatment. The phase transition temperature between the blue phase and the isotropic phase is the temperature at which the blue phase transitions to the isotropic phase when the temperature is increased. The temperature at which the isotropic phase transition occurs when the temperature is lowered to the blue phase. For example, the liquid crystal layer is heated to the isotropic phase and then gradually cooled to undergo a phase transition to the blue phase. The liquid crystal can be irradiated with light while maintaining the temperature at which the blue phase appears. The layer was gradually heated to undergo a phase transition to the isotropic phase, and then heated at +1°C from the phase transition temperature between the blue phase and the isotropic phase. It can be irradiated with light at a temperature of 0°C or less, preferably +5°C or less (when the isotropic phase is expressed). In addition, ultraviolet curing resin (UV curing resin) is used as the photo-curing resin contained in the liquid crystal material. In this case, the liquid crystal layer may be irradiated with ultraviolet light. Within +10°C, preferably within +5°C, of ​​the phase transition temperature between the ruthenium phase and the isotropic phase (isotropic phase If the polymer is stabilised by irradiating it with light while the molecule is in the expressed state, the response speed will be less than 1 msec. It is short and capable of high-speed response.

[0189] The photocurable resin may be a monofunctional monomer such as an acrylate or methacrylate, or a diacrylate. Multifunctional monomers such as acrylate, triacrylate, dimethacrylate, and trimethacrylate The liquid crystal material may be either liquid crystal or non-liquid crystal. The photocurable resin is a resin having a wavelength that reacts with the photopolymerization initiator used. A resin that can be cured by light of this type can be selected, and typically, an ultraviolet curable resin can be used. .

[0190] The photopolymerization initiator may be a radical polymerization initiator that generates radicals by irradiation with light, and may be an acid. The compound may be an acid generator which generates an acid group or a base generator which generates a base.

[0191] Specifically, the liquid crystal materials were JC-1041XX (manufactured by Chisso Corporation) and 4-cyano- A mixture of 4'-pentylbiphenyl and ZLI- 4572 (manufactured by Merck Ltd.) can be used, and the photocurable resin is 2-ethylhexyl Acrylate, RM257 (Merck Co., Ltd.), Trimethylolpropane Triacrylate As a photopolymerization initiator, 2,2-dimethoxy-2-phenylacetate can be used. Tofenone can be used.

[0192] The liquid crystal layer 206 is made of a liquid crystal material including a liquid crystal, a chiral agent, a photocurable resin, and a photopolymerization initiator. and form it.

[0193] As shown in FIG. 2C, the liquid crystal layer 206 is irradiated with light 207 to perform a polymer stabilization process. The liquid crystal layer 208 is formed. The light 207 is incident on the photocurable resin contained in the liquid crystal layer 206 and the photopolymerization. The light has a wavelength that the polymerization initiator reacts to. The polymer stabilization process by this light irradiation causes the liquid crystal layer The temperature range in which 208 exhibits a blue phase can be broadly improved.

[0194] When using ultraviolet light curing resin as a sealant and forming the liquid crystal layer by the dropping method, The light irradiation step in the stabilization treatment may also harden the sealant.

[0195] As shown in FIG. 2, a liquid crystal display device is configured by forming a color filter layer and a light-shielding layer on an element substrate. In this case, the light irradiated from the opposing substrate side is absorbed and blocked by the color filter layer and the light-shielding layer. Since the liquid crystal layer is not cut off, the entire liquid crystal layer can be uniformly irradiated. This can prevent the liquid crystal from being disoriented due to unevenness in the liquid crystal orientation and the associated uneven display. Since the light-shielding layer shields the thin-film transistor from light, its electrical characteristics remain stable. .

[0196] As shown in FIG. 2D, a polarizing plate 2 is provided on the outer side of the first substrate 200 (the side opposite to the liquid crystal layer 208). 10a, a polarizing plate 210b is provided on the outer side of the second substrate 201 (opposite side to the liquid crystal layer 208). In addition to the polarizing plate, optical films such as a retardation plate and an anti-reflection film may be provided. For example, circular polarization using a polarizing plate and a retardation plate may be used. It can be completed.

[0197] In addition, when multiple liquid crystal display devices are manufactured using a large substrate (so-called multiple panel manufacturing), The cutting step can be carried out before the polymer stabilization treatment or before the provision of the polarizing plate. Considering the effect on the liquid crystal layer due to the force applied during the cutting process (such as alignment disorder due to the force applied during the cutting process), It is preferable to perform the treatment after bonding the first substrate and the second substrate together and before the polymer stabilization treatment.

[0198] Although not shown, a backlight, a sidelight, or the like may be used as the light source. The substrate is a first substrate 200, and the substrate is a second substrate 201. It is irradiated.

[0199] By improving contrast and viewing angle characteristics and enabling high-speed response, higher image quality and performance are achieved. It is also possible to provide a liquid crystal display device which can be produced at a lower cost. It can be produced with good efficiency.

[0200] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0201] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0202] (Embodiment 10) A thin film transistor is manufactured, and the thin film transistor is used in a pixel portion and further in a driver circuit. In addition, a liquid crystal display device having a display function can be manufactured by using a thin film transistor as a driving circuit. A part or the whole of the circuit is formed integrally on the same substrate as the pixel section to form a system on panel. It is possible.

[0203] A liquid crystal display device includes a liquid crystal element (also called a liquid crystal display element) as a display element.

[0204] A liquid crystal display device includes a panel in which a display element is sealed, and a control unit connected to the panel. Furthermore, the liquid crystal display device includes a module in which an IC including a controller is mounted. In the manufacturing process, a display element substrate corresponds to one form before the display element is completed. The child substrate includes a means for supplying a current to each of the plurality of pixels. Specifically, only the pixel electrodes of the display element may be formed, or the pixel electrodes may be formed. Even if the conductive film is formed after etching and before forming the pixel electrode, Good, and all forms apply.

[0205] In this specification, the liquid crystal display device refers to an image display device, a display device, or It also refers to a connector, such as FPC (Flexible Printed Circuit). printed circuit) or TAB (Tape Automated B onding tape or TCP (Tape Carrier Package) A module with a printed wiring board attached to the end of a TAB tape or TCP. or display element is mounted with IC (integrated circuit) by COG (Chip On Glass) method. The term "liquid crystal display device" also includes all modules in which a semiconductor integrated circuit (integrated circuit) is directly mounted.

[0206] The appearance and cross section of a liquid crystal display panel, which corresponds to one form of a liquid crystal display device, will be described with reference to FIG. 12(A1) and 12(A2) show an oxide semiconductor formed on a first substrate 4001. A highly reliable thin film transistor 4010, 4011 including a semiconductor film, and a liquid crystal The element 4013 is sealed between the second substrate 4006 and the panel 4007 by a sealant 4005. FIG. 12(B) is a cross-sectional view taken along line MN in FIG. 12(A1) and (A2). Equivalent.

[0207] A pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. In this manner, a sealant 4005 is provided. A second substrate 4006 is provided on the path 4004. The line driver circuit 4004 is made up of a first substrate 4001, a sealant 4005, and a second substrate 4006. The liquid crystal layer 4008 is sealed together with the insulating layer 4006 .

[0208] FIG. 12(A1) shows a structure surrounded by a sealant 4005 on a first substrate 4001. A single crystal semiconductor film or a polycrystalline semiconductor film is formed on a separately prepared substrate in a region different from the region. A signal line driver circuit 4003 formed by the signal line driver circuit 4003 is mounted. A part of the circuit is formed over a first substrate 4001 using a thin film transistor using an oxide semiconductor. In this example, a signal line driver circuit 4003b is formed on a first substrate 4001, and a signal line driver circuit 4003b is formed on a second substrate 4002. A signal line driver circuit 4003 formed of a single crystal semiconductor film or a polycrystalline semiconductor film on a substrate a is implemented.

[0209] The method of connecting the separately formed drive circuit is not particularly limited, and may be a COG method, A wire bonding method, a TAB method, or the like can be used. FIG. 12A shows an example of mounting a signal line driver circuit 4003 by the COG method. This is an example in which a signal line driver circuit 4003 is mounted by the TAB method.

[0210] A pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. In FIG. 12B, the thin film transistor included in the pixel portion 4002 is A transistor 4010 and a thin film transistor 4011 included in the scanning line driver circuit 4004 An insulating layer 4020 and an interlayer film are formed on the thin film transistors 4010 and 4011. 4021 is provided.

[0211] The thin film transistors 4010 and 4011 are formed using the oxide semiconductor film described in any of Embodiments 1 to 8 as a semiconductor. A highly reliable thin film transistor containing the conductive layer can be applied. The transistors 4010 and 4011 are n-channel thin film transistors.

[0212] In addition, a pixel electrode layer 4030 and a common electrode layer 4031 are provided on a first substrate 4001. The pixel electrode layer 4030 is electrically connected to the thin film transistor 4010. 4013 includes a pixel electrode layer 4030, a common electrode layer 4031, and a liquid crystal layer 4008. The first substrate 4001 and the second substrate 4006 are provided with polarizing plates 4032 and 4033 on the outer sides thereof, respectively. 33 is provided.

[0213] The first substrate 4001 and the second substrate 4006 are made of a transparent material such as glass or plastic. As for plastic, FRP (Fibreglass) can be used. SS-Reinforced Plastics) plate, PVF (Polyvinyl Fluoride) ) film, polyester film or acrylic resin film can be used. In addition, sheets with a structure in which aluminum foil is sandwiched between PVF film or polyester film are also available. A marker can also be used.

[0214] Also, 4035 is a columnar spacer obtained by selectively etching the insulating film. It is provided to control the thickness (cell gap) of the liquid crystal layer 4008. A spacer may be used. In addition, the liquid crystal display device using the liquid crystal layer 4008 has a liquid crystal layer 40 It is preferable that the film thickness (cell gap) of 08 is set to about 5 μm or more and 20 μm or less.

[0215] Although FIG. 12 shows an example of a transmissive liquid crystal display device, the present invention can also be applied to a semi-transmissive liquid crystal display device.

[0216] In addition, in the liquid crystal display device of FIG. 12, a polarizing plate is provided on the outer side (viewing side) of the substrate. Alternatively, the polarizing plate may be provided on the inner side of the substrate. In addition, a light-shielding layer that functions as a black matrix may be provided.

[0217] The interlayer film 4021 is a transparent resin layer of a chromatic color and functions as a color filter layer. In addition, a part of the interlayer film 4021 may be a light-shielding layer. A light-shielding layer 4034 is provided on the second substrate 4006 side so as to cover the upper portions of 4010 and 4011. By providing the light-shielding layer 4034, the contrast is further improved and the thin-film transistor This can enhance the effect of stabilizing the data.

[0218] As the interlayer film 4021 provided on the thin film transistor, a colored layer of a chromatic light-transmitting resin layer is used. This allows the amount of light incident on the semiconductor layer of the thin film transistor to be reduced without reducing the aperture ratio of the pixel. The intensity can be attenuated, and the electrical properties of thin film transistors are affected by the photosensitivity of oxide semiconductors. The effect of preventing the fluctuation of the color and stabilizing the color can be obtained. When the color filter layer is provided on the opposing substrate side, a thin It is difficult to accurately align the pixel area with the element substrate on which the film transistor is formed, which reduces image quality. However, the interlayer film is formed directly on the element substrate as a color filter layer, so This allows for more precise control of the formation area, and can also accommodate fine pattern pixels. The interlayer film and color filter layer are both made of the same insulating layer, simplifying the process and reducing costs. This makes it possible to fabricate a liquid crystal display device.

[0219] The thin film transistor may be covered with an insulating layer 4020 which functions as a protective film for the thin film transistor. Not limited to.

[0220] The protective film prevents the intrusion of contaminating impurities such as organic matter, metals, and water vapor suspended in the air. The protective film is a silicon oxide film formed by sputtering. , silicon nitride film, silicon oxynitride film, silicon nitride oxide film, aluminum oxide film, aluminum nitride The aluminum oxide film, the aluminum nitride film, or the aluminum nitride oxide film is a single layer or a laminated layer. That's good.

[0221] After forming the protective film, the semiconductor layer may be annealed (at 300° C. to 400° C.). stomach.

[0222] In addition, when a light-transmitting insulating layer is further formed as a planarizing insulating film, polyimide, acrylic By using heat-resistant organic materials such as benzocyclobutene, polyamide, and epoxy, In addition to the above organic materials, low-k materials and siloxane-based materials can be used. Resin, PSG (phosphorus glass), BPSG (borophosphorus glass), etc. can be used. Note that an insulating layer may be formed by stacking a plurality of insulating films made of these materials. stomach.

[0223] The method for forming the insulating layers to be laminated is not particularly limited, and may be a sputtering method, a SOG method, or the like, depending on the material. , spin coating, dip coating, spray coating, droplet ejection method (inkjet method, screen printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife When the insulating layer is formed using a material liquid, it is baked. The semiconductor layer may be annealed (at 200°C to 400°C) at the same time in the process. By combining the deposition process with the annealing of the semiconductor layer, it is possible to efficiently fabricate liquid crystal displays. It becomes.

[0224] The pixel electrode layer 4030 and the common electrode layer 4031 are made of indium oxide containing tungsten oxide. , indium zinc oxide with tungsten oxide, indium oxide with titanium oxide, Indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), Translucent materials such as indium zinc oxide and indium tin oxide doped with silicon oxide A conductive material may be used.

[0225] The pixel electrode layer 4030 and the common electrode layer 4031 are made of a conductive polymer. The conductive composition may be formed using a conductive material containing a conductive film.

[0226] A signal line driver circuit 4003 and a scanning line driver circuit 4004 or a pixel section 4 Various signals and potentials are applied to 002 via FPC4018.

[0227] In addition, since thin-film transistors are easily damaged by static electricity, etc., It is preferable to provide a protection circuit for protecting the driver circuit on the same substrate as the line. is preferably configured using a nonlinear element using an oxide semiconductor.

[0228] In FIG. 12, the connection terminal electrode 4015 is formed from the same conductive film as the pixel electrode layer 4030. The terminal electrode 4016 is a source electrode layer and a drain electrode layer of the thin film transistors 4010 and 4011. It is formed from the same conductive film as the electrode layer.

[0229] The connection terminal electrode 4015 is connected to a terminal of the FPC 4018 via an anisotropic conductive film 4019. The electrodes are electrically connected to each other.

[0230] In FIG. 12, a signal line driver circuit 4003 is formed separately and mounted on a first substrate 4001. However, the present invention is not limited to this configuration. Alternatively, only a part of the signal line driver circuit or a part of the scanning line driver circuit may be formed separately. It may be implemented as follows.

[0231] FIG. 16 shows an example of a liquid crystal display module constituting the liquid crystal display device disclosed in this specification. It shows.

[0232] FIG. 16 shows an example of a liquid crystal display module, in which an element substrate 2600 and an opposing substrate 2601 are sealed. The substrate 2602 is fixed to the substrate 2601 by a bonding material 2602, and a device layer 2603 including TFTs and the like is disposed between the substrate 2601 and the substrate 2602, and a surface layer including a liquid crystal layer is disposed between the substrate 2601 and the substrate 2602. The display element 2604 and the interlayer film 2605 including a transparent resin layer of a chromatic color that functions as a color filter. The interlayer film 2605 including the chromatic light-transmitting resin layer forming the display area is In the case of the RGB system, the effective A colored light-transmitting resin layer is provided corresponding to each pixel. On the outside of the lens 601, a polarizing plate 2606, a polarizing plate 2607, and a diffusion plate 2613 are arranged. The light source is composed of a cold cathode fluorescent lamp 2610 and a reflector 2611. The circuit board 2612 is a flexible A cable wiring board 2609 is connected to the wiring circuit section 2608 of the element substrate 2600, and the External circuits such as a control circuit and a power circuit are built in. Also, a white LED is used as a light source. A diode may be used. Also, a polarizing plate and a liquid crystal layer are laminated with a retardation plate between them. You may do so.

[0233] By the above steps, a liquid crystal display panel having high reliability as a liquid crystal display device can be manufactured. Cut.

[0234] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0235] (Embodiment 11) The liquid crystal display device disclosed in this specification can be applied to various electronic devices (including gaming machines). The electronic device can be, for example, a television device (television or television (also called digital receivers), computer monitors, digital cameras, digital video cameras, etc. digital photo frames, mobile phones (also called mobile phones or mobile phone devices), These include large game machines such as small game machines, portable information terminals, audio playback devices, and pachinko machines. can be.

[0236] FIG. 13A shows an example of a television device 9600. The display unit 9603 is incorporated in the housing 9601. In addition, the stand 9605 supports the housing 9601. This shows a configuration in which the above is supported.

[0237] The television device 9600 can be operated using an operation switch on the housing 9601 or a separate remote control. This can be done by the remote control operation device 9610. The channel and volume can be controlled by the 9609, and the display 9603 shows In addition, the remote control unit 9610 can control the video. A display portion 9607 for displaying information output from 9610 may be provided.

[0238] The television device 9600 includes a receiver and a modem. It can receive more general television broadcasts, and can also be connected to a modem via wired or wireless connection. By connecting to a network, communication can be one-way (sender to receiver) or two-way. It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0239] FIG. 13B shows an example of a digital photo frame 9700. The photo frame 9700 includes a display unit 9703 built into a housing 9701. The unit 9703 is capable of displaying various images, for example images captured by a digital camera. By displaying the image data, it can function like a normal photo frame.

[0240] The Digital Photo Frame 9700 is equipped with an operation unit, external connection terminals (USB terminal, US A terminal that can be connected to various cables such as B cable, etc., and a recording medium insertion section, etc. These components may be installed on the same surface as the display unit, but they may be installed on the side or back. It is preferable to have a digital photo frame with a built-in memory card because it improves the design. A memory that stores image data taken with a digital camera is inserted into the body insertion section. The captured image data can be displayed on the display portion 9703 .

[0241] The digital photo frame 9700 may also be configured to transmit and receive information wirelessly. It is also possible to wirelessly import and display desired image data.

[0242] FIG. 14(A) shows a portable gaming machine, which is composed of two housings, a housing 9881 and a housing 9891. The housing 9881 is connected to a connector 9893 so as to be openable and closable. A display unit 9883 is incorporated in the housing 9891. The portable gaming machine shown in FIG. 14(A) also includes a speaker unit 9884 and a recording medium insertion unit 988. 6, LED lamp 9890, input means (operation keys 9885, connection terminals 9887, sensors 9 888 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, Chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration 9889) equipped with a microphone, etc. Of course, the configuration of the portable gaming machine is not limited to the above, and may be at least as described in the present specification. It is sufficient if the liquid crystal display device disclosed in the above is included, and other auxiliary equipment is appropriately provided. The portable game machine shown in FIG. 14(A) can be configured as a game machine having a game data recorded on a recording medium. The function of reading out programs or data and displaying them on the display unit, as well as wireless communication with other portable gaming machines, The portable gaming machine shown in FIG. 14(A) has a function of communicating with the user and sharing information. The functions are not limited to these, and the device may have a variety of functions.

[0243] FIG. 14B shows an example of a slot machine 9900, which is a large-scale gaming machine. The machine 9900 has a display unit 9903 built into a housing 9901. The Machine 9900 also includes other operating means such as a start lever and stop switch, coin The slot machine 9900 is equipped with a slot slot, a speaker, etc. However, the present invention is not limited to the above, and may be configured to include at least the liquid crystal display device disclosed in the present specification. In addition, other auxiliary equipment may be provided as appropriate.

[0244] FIG. 15A shows an example of a mobile phone 1000. The mobile phone 1000 has a housing. In addition to the display unit 1002 incorporated in the 1001, the operation buttons 1003 and the external connection port 10 04, a speaker 1005, a microphone 1006, etc.

[0245] The mobile phone 1000 shown in FIG. 15A displays information by touching a display unit 1002 with a finger or the like. In addition, operations such as making a phone call or sending an e-mail can be performed by using the display. This can be done by touching 1002 with a finger or the like.

[0246] The screen of the display unit 1002 has three main modes. The first is a display mode that is mainly used for displaying images. The first mode is a display mode, the second is an input mode for inputting information such as characters, and the third mode is a display mode. This is a display + input mode that combines the display mode and the input mode.

[0247] For example, when making a call or composing an e-mail, the display unit 1002 is used for inputting characters. The main character input mode is to input characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002. I wish.

[0248] In addition, a sensor for detecting tilt, such as a gyro or an acceleration sensor, is installed inside the mobile phone 1000. By providing a detection device having the above configuration, the orientation of the mobile phone 1000 (portrait or landscape) can be determined and the display The screen display of the display unit 1002 can be automatically switched.

[0249] The screen mode can be changed by touching the display unit 1002 or by operating the housing 1001. This is done by operating the button 1003. Also, depending on the type of image displayed on the display unit 1002, For example, the image signal to be displayed on the display unit is a moving image. If it is data, the mode is switched to display mode, and if it is text data, the mode is switched to input mode.

[0250] In the input mode, the optical sensor of the display unit 1002 detects a signal and displays If there is no input by touch operation of the part 1002 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0251] The display unit 1002 can also function as an image sensor. By touching the palm or fingers to the sensor 02, the palm print, fingerprint, etc. can be captured and identity authentication can be performed. In addition, the display unit may be equipped with a backlight that emits near-infrared light or a sensor that emits near-infrared light. By using a scanning light source, it is also possible to image finger veins, palm veins, etc.

[0252] FIG. 15B is also an example of a mobile phone. The mobile phone in FIG. 15B has a housing 9411. A display device 9410 including a display portion 9412 and an operation button 9413 and a housing 9401 An operation button 9402, an external input terminal 9403, a microphone 9404, a speaker 9405, and The communication device 9400 includes a light emitting unit 9406 that emits light when an incoming call is received, and has a display function. The display device 9410 can be attached to and detached from the communication device 9400 having a telephone function in the two directions shown by the arrows. Therefore, the display device 9410 and the communication device 9400 can be attached to each other with their short axes facing each other. The display device 9410 and the communication device 9400 can be attached to each other with their long axes facing each other. When only the function is required, the display device 9410 is removed from the communication device 9400, and the display device The communication device 9400 and the display device 9410 may be used alone. Images or input information can be sent and received via wireless or wired communication, and each can be recharged with a rechargeable battery. Has Terry.

Claims

1. A transistor above a substrate; a first insulating film having a region covering the transistor; a coloring layer provided above the first insulating film and having a region overlapping with an oxide semiconductor layer including a channel formation region of the transistor; a chromatic resin layer provided above the first insulating film and having an area overlapping the colored layer; a pixel electrode provided above the colored layer and above the chromatic resin layer and electrically connected to the oxide semiconductor layer; a second insulating film below the oxide semiconductor layer; a first electrode provided under the second insulating film and having an area overlapping the pixel electrode; the first electrode does not have a region overlapping with the oxide semiconductor layer, the first insulating film has a region in contact with a top surface of the oxide semiconductor layer and a region in contact with a top surface of a second electrode functioning as one of a source electrode and a drain electrode of the transistor; the oxide semiconductor layer contains indium, gallium, and zinc; the oxide semiconductor layer has a crystal structure, the chromatic resin layer has a region having a lower light transmittance than the oxide semiconductor layer and a larger thickness than the colored layer.

2. A transistor above a substrate; a gate line electrically connected to the transistor; a first insulating film having a region covering the transistor; a coloring layer provided above the first insulating film and having a region overlapping with an oxide semiconductor layer including a channel formation region of the transistor; a chromatic resin layer provided above the first insulating film and having an area overlapping the colored layer; a pixel electrode provided above the colored layer and above the chromatic resin layer and electrically connected to the oxide semiconductor layer; a second insulating film below the oxide semiconductor layer; a first electrode provided under the second insulating film and having an area overlapping the pixel electrode; the first electrode does not have a region overlapping with the oxide semiconductor layer, the first insulating film has a region in contact with a top surface of the oxide semiconductor layer and a region in contact with a top surface of a second electrode functioning as one of a source electrode and a drain electrode of the transistor; the gate line has a first region overlapping the oxide semiconductor layer and a second region not overlapping the oxide semiconductor layer; the colored layer has a region overlapping with the second region, the oxide semiconductor layer contains indium, gallium, and zinc; the oxide semiconductor layer has a crystal structure, the chromatic resin layer has a region having a lower light transmittance than the oxide semiconductor layer and a larger thickness than the colored layer.

3. In claim 1 or 2, The semiconductor device, wherein the first insulating film comprises silicon oxide.

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