Molding apparatus, molding method, and flattening method

Abstract

To provide a molding device that achieves both improved filling properties and advanced molding in a device for molding a substrate.SOLUTION: A molding device includes a mechanism for applying a curable composition to a substrate having unevenness, a stamping / releasing mechanism that presses or separates a mold (superstrate) having a flat surface against / away from the curable composition on the substrate, and a curing mechanism for curing the curable composition by light irradiation, and further includes first supply means for supplying gas to curable composition application means, and second supply means for supplying a gas different from the gas to the stamping / releasing mechanism.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a molding apparatus and a molding method, and more particularly to an apparatus and a method for planarizing a substrate surface. [Background technology]

[0002] In the photolithography process for manufacturing semiconductor devices, it is necessary to shape the substrate surface to a high degree, in particular to shape (planarize) a flat surface without unevenness. For example, in extreme ultraviolet exposure technology (EUV), a photolithography technology that has attracted attention in recent years, the depth of focus at which the projected image is formed becomes shallower as the device becomes finer, so the unevenness of the substrate surface to which the photoresist is applied must be kept to 4 nm or less.

[0003] In addition, nanoimprint lithography (NIL), another photolithography technology, also requires a flatness on the same level as EUV in order to improve filling and line width accuracy.

[0004] In the semiconductor industry, the most common planarization technique is chemical mechanical polishing (CMP). Developed primarily for planarizing hard materials such as metals and dielectrics, CMP has several drawbacks. Applying CMP to soft materials such as organic compounds requires expensive and strict process control, making it difficult to put into practical use. In addition, in recesses larger than a few microns, there is a problem of denting due to polishing.

[0005] Another planarization technique is a planarization technique using inkjet technology, in which droplets of a polymerizable imprint material (curable composition) are dispensed between the surface of a substrate and a template, as described in Patent Document 1. The pattern of the droplets applied to the substrate is changed depending on the unevenness of the substrate surface, and the applied curable composition is brought into contact with the template. The curable composition is then solidified while in contact with the template.

[0006] The solidified curable composition and the underlying substrate are then released from the template to obtain a planarized substrate. The droplet pattern applied to the substrate surface by inkjet technology is adjusted to compensate for the effects of density variations in the amount of filling in the uneven pattern formed on the surface. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Patent No. 6495283 Summary of the Invention [Problem to be solved by the invention]

[0008] However, in the method of Patent Document 1, gas in the ambient atmosphere is easily entrained in the curable composition when it comes into contact with the template, which results in the formation of air bubbles in the formed film, which can lead to the problem of curing in a state where unfilled defects occur.

[0009] SUMMARY OF THE PRESENT EMBODIMENTS Accordingly, an object of the present invention is to provide a planarizing apparatus and a planarizing method that are capable of suppressing unfilled defects and achieving a high level of planarization even on uneven substrates. [Means for solving the problem]

[0010] In order to achieve the object, a molding apparatus according to one aspect of the present invention is a molding apparatus comprising: an applying means for applying a curable composition onto a substrate; a mold holding means for holding a mold to be brought into contact with the curable composition on the substrate; and a curing means for curing the curable composition, The curable composition is characterized by having a first supplying means for supplying a first gas that causes a decrease in viscosity of the curable composition to the curable composition, and a degassing means for degassing the first gas from the curable composition after it has been supplied by the first supplying means. Effect of the Invention

[0011] According to the present invention, it is possible to provide a planarizing apparatus that achieves both high filling ability and a high degree of planarization. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a diagram showing a planarization apparatus according to a first embodiment. [Diagram 2] 1 is an example of a condensable gas that can be used as the first gas according to an embodiment. [Diagram 3] 4 is a flowchart of a planarization method according to the first embodiment. [Figure 4] FIG. 1 is a diagram showing the relationship between condensable gas concentration and droplet spreading. [Diagram 5] FIG. 13 is a diagram showing a planarization apparatus according to a second embodiment. [Figure 6] 10 is a flowchart of a planarization method according to a second embodiment. [Figure 7] FIG. 13 is a diagram showing a planarization apparatus according to a third embodiment. [Figure 8] 13 is a flowchart of a planarization method according to a third embodiment. [Figure 9] FIG. 13 is a diagram showing a planarization apparatus according to a fourth and fifth embodiment. [Figure 10] 13 is a flowchart of a planarization method according to the fourth and fifth embodiments. [Figure 11] FIG. 13 is a diagram showing a planarizing apparatus according to a sixth embodiment. [Figure 12] 13 is a flowchart of a planarization method according to a sixth embodiment. [Figure 13] FIG. 13 is a diagram showing a planarization apparatus according to a seventh embodiment. [Figure 14] 13 is a flowchart of a planarization method according to a seventh embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0014] First Embodiment FIG. 1 is a diagram showing a planarization apparatus according to a first embodiment. This planarization apparatus is used in the manufacture of devices such as semiconductor devices, and is an apparatus for forming a flat surface pattern (typically a pattern of the curable composition) on a substrate, which is an object to be processed, by using a mold (superstrate) having a flat surface. Note that the planarization apparatus in this embodiment employs a photocuring method. In the following figures, the Z axis is taken parallel to the optical axis of an illumination system that irradiates the curable composition on the substrate with ultraviolet light, and the X axis and the Y axis are taken orthogonal to each other in a plane perpendicular to the Z axis. This planarization apparatus 1 includes an illumination system 2, a mold holding unit 3, a substrate stage 4, an application means 5, a first supply mechanism 6, and a second supply mechanism 7.

[0015] The illumination system 2 is an illumination means for irradiating ultraviolet light onto the superstrate 8, which transmits ultraviolet light, during the imprint process. Although not shown, the illumination system 2 is composed of a light source and an optical element for adjusting the ultraviolet light emitted from the light source to light suitable for imprinting. The superstrate 8 is a mold having a very flat surface on the side facing the substrate 10, which has projections and recesses. The material of the superstrate 8 is a material that can transmit ultraviolet light, such as quartz.

[0016] The mold holding unit 3 is a holding unit that attracts and holds the superstraight 8 by vacuum suction force or electrostatic force. This mold holding unit 3 includes a superstraight chuck 9 and a mold driving mechanism (not shown) that drives the mold holding unit 3 in the Z-axis direction to press the superstraight 8 against the ultraviolet-curable composition applied on the substrate 10. Note that the pressing and demolding operations in the flattening apparatus 1 may be realized by moving the superstraight 8 in the Z direction as described above, but may also be realized by moving the substrate stage 4 (substrate 10) in the Z direction, for example, or both may be moved.

[0017] The substrate stage 4 is a holding unit that holds the substrate 10 by, for example, vacuum suction and has a substrate chuck 11 that allows it to move within the XY plane. Here, the substrate 10 is a workpiece made of, for example, single crystal silicon, and a curable composition 12 formed by a superstrate 8 is applied to the workpiece surface.

[0018] The application means 5 is an application means that applies a curable composition 12 (uncured curable composition) onto the substrate 10. Here, the curable composition 12 is a photocurable composition that has the property of being cured by receiving ultraviolet light, and is appropriately selected depending on the manufacturing process of the semiconductor device, etc.

[0019] The application means 5 may be any means capable of applying the curable composition as a liquid onto the substrate 10, but is preferably a means using inkjet technology that ejects the curable composition as droplets from a ejection portion.

[0020] The first supply mechanism 6 is a supply means (supply section) that supplies a first gas that reduces the viscosity of the curable composition 12. This first supply mechanism 6 is in communication with the application means 5, and the curable composition 12 and the supplied gas are mixed in the application means 5. In addition, the first gas supplied from the first supply mechanism 6 dissolves in the curable composition 12, thereby reducing the viscosity of the curable composition 12 and improving the filling property. The first gas includes a condensable gas supply section 21 that supplies a condensable gas that has the property of being condensed and liquefied by the application of pressure (pressure increase).

[0021] The condensable gas is a gas having a boiling point of -10°C to 25°C at atmospheric pressure, or a gas having a vapor pressure of 0.1 to 0.4 MPa at 25°C. Here, as the condensable gas, HFE (hydrofluoroether) represented by HFE-245mc (CF3CF2OCH3) can be adopted. However, the gas adopted as the condensable gas is not limited thereto, and may be, for example, HFC (hydrofluorocarbon) represented by HFC-245fa (1,1,1,3,3 pentafluoropropane, CHF2CH2CF3). Representative condensable gases that can be used as the first gas of the present invention are shown in FIG. 2. In addition, the first supply mechanism 6 includes a valve 22 and a gas supply control unit 23 that controls the gas supply amount.

[0022] The applying means 5 may be of a cartridge type, or may be prepared in advance by mixing the condensable gas with the curable composition 12. The condensable gas supply unit 21 can correct the variation in the mixed amount caused by a change in pressure, temperature, or the like.

[0023] By mixing a condensable gas in the application means 5, it is possible to reduce the viscosity of the curable composition 12, which is usually difficult to apply by dispensing or requires a very high voltage. This widens the range of options for the curable composition, and it becomes possible to select a composition that has superior properties required for the curable composition, such as shrinkage rate and dry etching resistance.

[0024] The second supply mechanism 7 is a supply means (supply unit) that supplies a second gas toward the imprinting position after the curable composition 12 is applied onto the substrate 10, until the imprinting in which the superstrate 8 and the curable composition 12 on the substrate 10 are pressed against each other. The second gas preferably includes a permeable gas supply unit 31 that supplies a permeable gas having a property of dissolving or diffusing in at least one of the superstrate 8 and the substrate 10. Here, gases such as helium and hydrogen can be used as the permeable gas. However, when flammable hydrogen is used as the permeable gas, it is necessary to install a separate explosion-proof system in the imprinting apparatus 1 and to configure the imprinting apparatus 1 with care against fire. In addition, since the second gas does not affect the shrinkage of the pattern shape by being separated from the curable composition cured curable composition pattern, it is preferable that the second gas has a low solubility in the curable composition or a small volume ratio even if it dissolves. The second gas supplied from the second supply mechanism 6 may be air, nitrogen, or an inert gas. The second supply mechanism 7 includes a valve 32, a gas supply control unit 33 that controls the amount of gas supplied, and a gas supply nozzle 34. The first gas dissolved in the curable composition 12 is removed from the curable composition 12 by the second supply mechanism 7. In order to remove the first gas from the curable composition 12, a mechanism for reducing the pressure in the space between the curable composition on the substrate and the superstrate may be provided. A mechanism for heating the curable composition on the substrate may also be provided.

[0025] Next, a description will be given of the planarization process performed by the planarization apparatus 1. Fig. 3 shows a flowchart of the planarization method according to this embodiment.

[0026] First, a first gas is supplied from a first supply mechanism 6 to the curable composition 12 in the application means 5 of Fig. 1 (Step 1). The first gas dissolves in the curable composition 12 in the application means 5, and the viscosity decreases.

[0027] Next, the substrate 10 having projections and recesses is placed and fixed on the substrate stage 4 by a substrate conveying device (not shown), and the substrate stage 4 is then moved to the application position of the curable composition application means 5. Then, the curable composition 12 is applied onto the substrate 10 from the curable composition application means 5 (step 2). The amount of the curable composition 12 discharged from the curable composition application means 5 to each part of the substrate is adjusted based on the layout of projections and recesses of the substrate. The curable composition 12 discharged onto the substrate 10 spreads over the substrate, but the first gas dissolves in the curable composition application means 5 and the viscosity is reduced, so that the spread over the substrate is improved, and unfilled defects can be prevented. FIG. 4 is a diagram showing the relationship between the concentration of the condensable gas and the spread area of ​​droplets of the curable composition. In this way, the spread of the droplets is improved by the condensable gas.

[0028] Next, the substrate stage 4 is moved below the mold holding unit 3 by a substrate conveying device (not shown). Then, the second gas is supplied from the second supply mechanism 7 to the space between the curable composition 12 on the substrate 10 and the superstrate 8 (step 3). By supplying the second gas, the first gas dissolved in the curable composition 12 is degassed from the curable composition 12. The first gas has a high solubility in the curable composition 12, and if the first gas is cured while dissolved in the curable composition 12, the curable composition 12 is released from the cured curable composition pattern after the superstrate is released (step 6) described later, and the curable composition pattern shrinks, so that the flatness decreases. For this reason, it is desirable to degas the first gas from the curable composition 12 before the curable composition 12 is cured and while there is a space for the first gas to escape. At this time, the space between the curable composition on the substrate and the superstrate may be depressurized to promote the release of the first gas. The curable composition on the substrate may be heated to promote the release of the first gas.

[0029] Next, the superstrate 8 is imprinted onto the curable composition 12 on the substrate by a superstrate driving mechanism (not shown), thereby forming the curable composition 12 (Step 4). In this state, the illumination system 2 irradiates ultraviolet light from the upper surface (rear surface) of the superstrate 8, and the curable composition is cured by the ultraviolet light transmitted through the superstrate 8 (Step 5). Then, after the curable composition 12 is cured, the superstrate driving mechanism is driven again to separate the superstrate 8 from the substrate 10 (Step 6). At this time, the first gas is not degassed from the curable composition 12, so that the curable composition pattern does not shrink due to the degassing first gas, and flatness is maintained.

[0030] As described above, according to the present embodiment, it is possible to provide a planarizing apparatus and method that are advantageous in achieving both good filling properties and good flatness.

[0031] <Second embodiment> Next, a flattening apparatus according to a second embodiment will be described with reference to FIG. 5. FIG. 5 is a diagram showing a flattening apparatus according to a second embodiment. This flattening apparatus is used in the manufacture of device articles such as semiconductor devices, and is an apparatus for forming a flat surface pattern (typically a pattern of a cured product) on a substrate, which is an object to be processed, by molding the curable composition (typically an uncured curable composition) on the substrate using a mold (superstrate) having a flat surface. Note that the flattening apparatus here employs a photocuring method. In addition, in the following figures, the Z axis is taken parallel to the optical axis of the illumination system that irradiates the curable composition on the substrate with ultraviolet light, and the X axis and the Y axis are taken orthogonal to each other in a plane perpendicular to the Z axis. This flattening apparatus 1 includes an illumination system 2, a mold holding unit 3, a substrate stage 4, an application means 5, a first supply mechanism 6, and a second supply mechanism 7.

[0032] The illumination system 2 is an illumination means for irradiating the superstrate 8 with ultraviolet light during the imprint process. Although not shown, the illumination system 2 is composed of a light source and an optical element for adjusting the ultraviolet light emitted from the light source to light suitable for imprinting. The superstrate 8 is a mold having a very flat surface on the side facing the substrate 10 having projections and recesses. The material of the superstrate 8 is a material that can transmit ultraviolet light, such as quartz.

[0033] The mold holding unit 3 is a holding unit that attracts and holds the superstraight 8 by vacuum suction force or electrostatic force. This mold holding unit 3 includes a superstraight chuck 9 and a mold driving mechanism (not shown) that drives the mold holding unit 3 in the Z-axis direction to press the superstraight 8 against the ultraviolet-curable composition applied on the substrate 10. Note that the pressing and demolding operations in the flattening apparatus 1 may be realized by moving the superstraight 8 in the Z direction as described above, but may also be realized by moving the substrate stage 4 (substrate 10) in the Z direction, for example, or both may be moved.

[0034] The substrate stage 4 is a holding unit that holds the substrate 10 by, for example, vacuum suction and has a substrate chuck 11 that allows it to move within the XY plane. Here, the substrate 10 is a workpiece made of, for example, single crystal silicon, and a curable composition 12 formed by a superstrate 8 is applied to the workpiece surface.

[0035] The application means 5 is an application means that applies a curable composition 12 (uncured curable composition) onto the substrate 10. Here, the curable composition 12 is a photocurable composition that has the property of being cured by receiving ultraviolet light, and is appropriately selected depending on the manufacturing process of the semiconductor device, etc.

[0036] The first supply mechanism 6 is a supply means (supply section) that supplies a first gas that reduces the viscosity of the curable composition 12 in order to aerate the curable composition. This first supply mechanism 6 supplies the first gas toward the substrate 10 in the application step in which the curable composition 12 is applied onto the substrate 10. The first gas supplied from the first supply mechanism 6 dissolves in the curable composition 12, thereby reducing the viscosity of the curable composition 12 and improving the filling property. The first gas includes a condensable gas supply section 21 that supplies a condensable gas that has the property of condensing and liquefying when pressure is applied (pressure increase).

[0037] Here, the first gas may be the above-mentioned HFE, HFC, etc. Furthermore, the first supply mechanism 6 includes a valve 22, a gas supply control unit 23 that controls the amount of gas supplied, and a gas supply nozzle 24.

[0038] The second supply mechanism 7 is a supply means (supply unit) that supplies a second gas toward the imprinting position after the curable composition 12 is applied onto the substrate 10, until the imprinting where the superstrate 8 and the curable composition 12 on the substrate 10 are pressed against each other. The second supply mechanism 6 desirably includes a permeable gas supply unit 31 that supplies a permeable gas having a property of dissolving or diffusing in at least one of the superstrate 8, the curable composition 12, and the substrate 10. Here, gases such as helium and hydrogen can be used as the permeable gas. However, when flammable hydrogen is used as the permeable gas, it is necessary to install a separate explosion-proof system in the imprinting apparatus 1 and configure the imprinting apparatus 1 with care against fire. The second gas supplied from the second supply mechanism 6 may be air, nitrogen, or an inert gas. The second supply mechanism 7 includes a valve 32, a gas supply control unit 33 that controls the amount of gas supplied, and a gas supply nozzle 34. The first gas dissolved in the curable composition 12 is separated from the curable composition 12 by the second supply mechanism 7. A decompression mechanism may be provided to reduce the pressure in the space between the curable composition on the substrate and the superstrate in order to remove the first gas from the curable composition 12. A heating mechanism may be provided to heat the curable composition on the substrate.

[0039] (Flattening method) Next, a description will be given of the planarization process performed by the planarization apparatus 1. Fig. 6 shows a flowchart of the planarization method according to this embodiment.

[0040] First, a substrate 10 having projections and recesses is placed and fixed on a substrate stage 4 by a substrate transport device not shown in Fig. 5, and then the substrate stage 4 is moved to an application position of a curable composition application means 5. Then, a first gas is supplied from a first supply mechanism 6 to a space between the substrate 10 and a superstrate 8 (step 1).

[0041] Next, the curable composition 12 is applied onto the substrate 10 from the curable composition application means 5 (Step 2).

[0042] The amount of the curable composition 12 dispensed from the curable composition applying means 5 onto each portion of the substrate is adjusted based on the layout of the projections and recesses of the substrate. At this time, the viscosity of the curable composition 12 is reduced as the first gas dissolves. The reduced viscosity improves the spread of the curable composition 12 dispensed onto the substrate 10 over the substrate, making it possible to prevent unfilled defects.

[0043] Next, the substrate stage 4 is moved below the mold holding unit 3 by a substrate conveying device (not shown). Then, the second gas is supplied from the second supply mechanism 7 to the space between the curable composition 12 on the substrate 10 and the superstrate 8 (step 3). By supplying the second gas, the first gas dissolved in the curable composition 12 is degassed from the curable composition 12. The first gas has a high solubility in the curable composition 12, and if the first gas is cured while dissolved in the curable composition 12, the curable composition 12 is released from the cured curable composition pattern after the superstrate is released (step 6) described later, and the curable composition pattern shrinks, so that the flatness decreases. For this reason, it is desirable to degas the first gas from the curable composition 12 before the curable composition 12 is cured and while there is a space for the first gas to escape. At this time, the space between the curable composition on the substrate and the superstrate may be depressurized to promote the release of the first gas. The curable composition on the substrate may be heated to promote the release of the first gas.

[0044] Next, the superstrate 8 is imprinted onto the curable composition 12 on the substrate by a superstrate driving mechanism (not shown), thereby forming the curable composition 12 (Step 4). In this state, the illumination system 2 irradiates ultraviolet light from the upper surface (rear surface) of the superstrate 8, and the curable composition is cured by the ultraviolet light transmitted through the superstrate 8 (Step 5). Then, after the curable composition 12 is cured, the superstrate driving mechanism is driven again to separate the superstrate 8 from the substrate 10 (Step 6). At this time, the first gas is not degassed from the curable composition 12, so that the curable composition pattern does not shrink due to the degassing first gas, and flatness is maintained.

[0045] As described above, according to the present embodiment, it is possible to provide a planarizing apparatus and method that are advantageous in achieving both good filling properties and good flatness.

[0046] <Third embodiment> Next, a planarization apparatus according to a third embodiment will be described with reference to FIG. 7. FIG. 7 is a diagram showing a planarization apparatus according to a third embodiment. This planarization apparatus is used in the manufacture of device articles such as semiconductor devices, and is an apparatus for forming a flat surface pattern (typically a pattern of a cured product) on a substrate, which is an object to be processed, by molding the curable composition (typically an uncured curable composition) on the substrate using a mold (superstrate) having a flat surface. Note that the planarization apparatus in this embodiment employs a photocuring method. In addition, in the following figures, the Z axis is taken parallel to the optical axis of the illumination system that irradiates the curable composition on the substrate with ultraviolet light, and the X axis and the Y axis are taken perpendicular to each other in a plane perpendicular to the Z axis. This planarization apparatus 1 includes a deposition station 101, which is a processing area having a first supply means, a flattening station 102 having a processing area having a second supply means isolated from the deposition station 101, and an inter-station transport mechanism 103.

[0047] The application station 101 includes a substrate stage 4 , an application means 5 , and a first supply mechanism 6 .

[0048] The substrate stage 4 is a holding unit that holds the substrate 10 by, for example, vacuum suction and has a substrate chuck 11 that allows it to move within the XY plane. Here, the substrate 10 is a workpiece made of, for example, single crystal silicon, and a curable composition 12 formed by a superstrate 8 is applied to the workpiece surface.

[0049] The application means 5 is an application means that applies a curable composition 12 (uncured curable composition) onto the substrate 10. Here, the curable composition 12 is a photocurable composition that has the property of being cured by receiving ultraviolet light, and is appropriately selected depending on the manufacturing process of the semiconductor device, etc.

[0050] The first supply mechanism 6 is a supply means (supply section) that supplies a first gas that reduces the viscosity of the curable composition 12. This first supply mechanism 6 is in communication with the application means 5, and the curable composition 12 and the supplied gas are mixed in the application means 5. In addition, the first gas supplied from the first supply mechanism 6 dissolves in the curable composition 12, thereby reducing the viscosity of the curable composition 12 and improving the filling property. The first gas includes a condensable gas supply section 21 that supplies a condensable gas that has the property of being condensed and liquefied by the application of pressure (pressure increase).

[0051] Here, the condensable gas may be the above-mentioned HFE, HFC, etc. Furthermore, the first supply mechanism 6 includes a valve 22 and a gas supply control unit 23 that controls the amount of gas supplied.

[0052] The applying means 5 may be of a cartridge type, or may be prepared in advance by mixing the condensable gas with the curable composition 12. The condensable gas supply unit 21 can correct the variation in the mixed amount caused by a change in pressure, temperature, or the like.

[0053] By mixing a condensable gas in the application means 5, it is possible to reduce the viscosity of the curable composition 12, which is usually difficult to apply by dispensing or requires a very high voltage. This widens the range of options for the curable composition, and it becomes possible to select a composition that has superior properties required for the curable composition, such as shrinkage rate and dry etching resistance.

[0054] The flattening station 102 includes an illumination system 2, a mold holding unit 3, a substrate stage 4, and a second supply mechanism 7.

[0055] The illumination system 2 is an illumination means for irradiating the superstrate 8 with ultraviolet light during the imprint process. Although not shown, the illumination system 2 is composed of a light source and an optical element for adjusting the ultraviolet light emitted from the light source to light suitable for imprinting. The superstrate 8 is a mold having a very flat surface on the side facing the substrate 10 having projections and recesses. The material of the superstrate 8 is a material that can transmit ultraviolet light, such as quartz.

[0056] The mold holding unit 3 is a holding unit that attracts and holds the superstraight 8 by vacuum suction force or electrostatic force. This mold holding unit 3 includes a superstraight chuck 9 and a mold driving mechanism (not shown) that drives the mold holding unit 3 in the Z-axis direction to press the superstraight 8 against the ultraviolet-curable composition applied on the substrate 10. Note that the pressing and releasing operations in the flattening apparatus 1 may be realized by moving the superstraight 8 in the Z direction as described above, but may also be realized by moving the substrate stage 4 (substrate 10) in the Z direction, for example, or both may be moved.

[0057] The substrate stage 4 is a holding unit that holds the substrate 10 by, for example, vacuum suction and has a substrate chuck 11 that allows it to move within the XY plane. Here, the substrate 10 is a workpiece made of, for example, single crystal silicon, and a curable composition 12 formed by a superstrate 8 is applied to the workpiece surface.

[0058] The second supply mechanism 7 is a supply means (supply unit) that supplies a second gas toward the imprinting position after the curable composition 12 is applied onto the substrate 10, until the imprinting in which the superstrate 8 and the curable composition 12 on the substrate 10 are pressed against each other. The second gas preferably includes a permeable gas supply unit 31 that supplies a permeable gas having a property of dissolving or diffusing in at least one of the superstrate 8 and the substrate 10. Here, gases such as helium and hydrogen can be used as the permeable gas. However, when flammable hydrogen is used as the permeable gas, it is necessary to install a separate explosion-proof system in the imprinting apparatus 1 and to configure the imprinting apparatus 1 with care against fire. In addition, since the second gas does not affect the shrinkage of the pattern shape by being separated from the curable composition cured curable composition pattern, it is preferable that the second gas has a low solubility in the curable composition or a small volume ratio even if it dissolves. The second gas supplied from the second supply mechanism 6 may be air, nitrogen, or an inert gas. The second supply mechanism 7 includes a valve 32, a gas supply control unit 33 that controls the amount of gas supplied, and a gas supply nozzle 34. The second supply mechanism 7 causes the first gas dissolved in the curable composition 12 to be separated from the curable composition 12. In order to separate the first gas from the curable composition 12, a decompression mechanism that decompresses the space between the curable composition on the substrate and the superstrate may be attached. Also, a heating mechanism that heats the curable composition on the substrate may be attached.

[0059] Next, a description will be given of the planarization process performed by the planarization apparatus 1. Fig. 8 shows a flowchart of the planarization method according to this embodiment.

[0060] First, a first gas is supplied from a first supply mechanism 6 to the curable composition 12 in the application means 5 of the application station 101 in Fig. 7 (step 1). The first gas dissolves in the curable composition 12 in the application means 5, and the viscosity decreases.

[0061] Next, the substrate 10 having projections and recesses is placed and fixed on the substrate stage 4 of the application station 101 by a substrate transport device (not shown), and then the substrate stage 4 is moved to the application position of the curable composition application means 5. Then, the curable composition 12 is applied onto the substrate 10 from the curable composition application means 5 (step 2). The amount of the curable composition 12 discharged from the application means 5 to each part of the substrate is adjusted based on the layout of projections and recesses of the substrate. The curable composition 12 discharged onto the substrate 10 spreads over the substrate, but the first gas dissolves in the application means 5, reducing the viscosity, improving the spread over the substrate and preventing unfilled defects.

[0062] Next, the substrate 10 in the application station 101 is transferred to the flattening station 102 by the inter-station transport mechanism 103 (step 3). In the flattening station 102, the substrate stage 4 of the flattening station 102 is moved to below the mold holding unit 3 by a substrate transport device (not shown).

[0063] Thereafter, the second gas is supplied from the second supply mechanism 7 to the space between the curable composition 12 on the substrate 10 in the flattening station 102 and the superstrate 8 (step 4). By supplying the second gas, the first gas dissolved in the curable composition 12 is degassed from the curable composition 12. The first gas has a high solubility in the curable composition 12, and if the first gas is cured while dissolved in the curable composition 12, the curable composition 12 is released from the cured curable composition pattern after the superstrate is released (step 7) described later, and the curable composition pattern shrinks, resulting in a decrease in flatness. For this reason, it is desirable to degas the first gas from the curable composition 12 before the curing of the curable composition 12 while there is a space for the first gas to escape. At this time, the space between the curable composition on the substrate and the superstrate may be depressurized to promote the release of the first gas. The curable composition on the substrate may be heated to promote the release of the first gas.

[0064] Next, the superstrate 8 is imprinted onto the curable composition 12 on the substrate in the planarizing station 102 by a superstrate driving mechanism (not shown), thereby forming the curable composition 12 (step 5). In this state, the illumination system 2 irradiates ultraviolet light from the upper surface (rear surface) of the superstrate 8, and the curable composition is cured by the ultraviolet light transmitted through the superstrate 8 (step 6). Then, after the curable composition 12 is cured, the superstrate driving mechanism is driven again to separate the superstrate 8 from the substrate 10 (step 7). At this time, the first gas is not degassed from the curable composition 12, so that the curable composition pattern does not shrink and flatness is maintained.

[0065] As described above, according to this embodiment, by having the application station 101 and the flattening station 102, more rapid gas exchange is possible, and a flattening apparatus and method can be provided that are advantageous in achieving both filling ability and flatness.

[0066] <Fourth embodiment> Next, a flattening apparatus according to a fourth embodiment will be described with reference to FIG. 9. FIG. 9 is a diagram showing a flattening apparatus according to a fourth embodiment. This flattening apparatus is used in the manufacture of device articles such as semiconductor devices, and is an apparatus for forming a flat surface pattern (typically a pattern of the curable composition) on a substrate, which is an object to be processed, by molding the curable composition (typically an uncured curable composition) on the substrate using a mold (superstrate) having a flat surface. Note that the flattening apparatus here employs a photocuring method. In addition, in the following figures, the Z axis is taken parallel to the optical axis of the illumination system that irradiates the curable composition on the substrate with ultraviolet light, and the X axis and the Y axis are taken orthogonal to each other in a plane perpendicular to the Z axis. This flattening apparatus 1 includes an application station 101, a flattening station 102, and an inter-station transport mechanism 103.

[0067] The application station 101 includes a substrate stage 4 , an application means 5 , and a first supply mechanism 6 .

[0068] The substrate stage 4 is a holding unit that holds the substrate 10 by, for example, vacuum suction and has a substrate chuck 11 that allows it to move within the XY plane. Here, the substrate 10 is a workpiece made of, for example, single crystal silicon, and a curable composition 12 formed by a superstrate 8 is applied to the workpiece surface.

[0069] The application means 5 is an application means that applies a curable composition 12 (uncured curable composition) onto the substrate 10. Here, the curable composition 12 is a photocurable composition that has the property of being cured by receiving ultraviolet light, and is appropriately selected depending on the manufacturing process of the semiconductor device, etc.

[0070] The first supply mechanism 6 is a supply means (supply section) that supplies a first gas that reduces the viscosity of the curable composition 12. This first supply mechanism 6 supplies the first gas toward the substrate 10 in a applying step in which the curable composition 12 is applied onto the substrate 10. The first gas supplied from the first supply mechanism 6 dissolves in the curable composition 12, thereby reducing the viscosity of the curable composition 12 and improving the filling property. The first gas includes a condensable gas supply section 21 that supplies a condensable gas that has the property of condensing and liquefying when pressure is applied (pressure increase).

[0071] Here, the condensable gas may be the above-mentioned HFE, HFC, etc. Furthermore, the first supply mechanism 6 includes a valve 22, a gas supply control unit 23 that controls the amount of gas supplied, and a gas supply nozzle 24.

[0072] The flattening station 102 includes an illumination system 2, a mold holding unit 3, a substrate stage 4, and a second supply mechanism 7.

[0073] The illumination system 2 is an illumination means for irradiating the superstrate 8 with ultraviolet light during the imprint process. Although not shown, the illumination system 2 is composed of a light source and an optical element for adjusting the ultraviolet light emitted from the light source to light suitable for imprinting. The superstrate 8 is a mold having a very flat surface on the side facing the substrate 10 having projections and recesses. The material of the superstrate 8 is a material that can transmit ultraviolet light, such as quartz.

[0074] The mold holding unit 3 is a holding unit that attracts and holds the superstraight 8 by vacuum suction force or electrostatic force. This mold holding unit 3 includes a superstraight chuck 9 and a mold driving mechanism (not shown) that drives the mold holding unit 3 in the Z-axis direction to press the superstraight 8 against the ultraviolet-curable composition applied on the substrate 10. Note that the pressing and releasing operations in the flattening apparatus 1 may be realized by moving the superstraight 8 in the Z direction as described above, but may also be realized by moving the substrate stage 4 (substrate 10) in the Z direction, for example, or both may be moved.

[0075] The substrate stage 4 is a holding unit that holds the substrate 10 by, for example, vacuum suction and has a substrate chuck 11 that allows it to move within the XY plane. Here, the substrate 10 is a workpiece made of, for example, single crystal silicon, and a curable composition 12 formed by a superstrate 8 is applied to the workpiece surface.

[0076] The second supply mechanism 7 is a supply means (supply unit) that supplies a second gas toward the imprinting position after the curable composition 12 is applied onto the substrate 10, until the imprinting in which the superstrate 8 and the curable composition 12 on the substrate 10 are pressed against each other. The second gas preferably includes a permeable gas supply unit 31 that supplies a permeable gas having a property of dissolving or diffusing in at least one of the superstrate 8 and the substrate 10. Here, gases such as helium and hydrogen can be used as the permeable gas. However, when flammable hydrogen is used as the permeable gas, it is necessary to install a separate explosion-proof system in the imprinting apparatus 1 and to configure the imprinting apparatus 1 with care against fire. In addition, since the second gas does not affect the shrinkage of the pattern shape by being separated from the curable composition cured curable composition pattern, it is preferable that the second gas has a low solubility in the curable composition or a small volume ratio even if it dissolves. The second gas supplied from the second supply mechanism 6 may be air, nitrogen, or an inert gas. The second supply mechanism 7 includes a valve 32, a gas supply control unit 33 that controls the amount of gas supplied, and a gas supply nozzle 34. The second supply mechanism 7 causes the first gas dissolved in the curable composition 12 to be separated from the curable composition 12. In order to separate the first gas from the curable composition 12, a mechanism for reducing the pressure in the space between the curable composition on the substrate and the superstrate may be provided. A heating mechanism for heating the curable composition on the substrate may be provided.

[0077] Next, a description will be given of the planarization process performed by the planarization apparatus 1. Fig. 10 shows a flowchart of the planarization method according to this embodiment.

[0078] 9, a substrate 10 having projections and recesses is placed and fixed on a substrate stage 4 by a substrate transport device (not shown), and then the substrate stage 4 is moved to a deposition position of a curable composition deposition means 5. Then, a first gas is supplied from a first supply mechanism 6 to a space above the substrate 10 (step 1).

[0079] Next, the curable composition 12 is applied onto the substrate 10 from the application means 5 of the application station 101 (step 2). The amount of the curable composition 12 dispensed from the curable composition application means 5 onto each part of the substrate is adjusted based on the uneven layout of the substrate. At this time, the viscosity of the curable composition 12 decreases as the first gas dissolves. The reduced viscosity allows the curable composition 12 dispensed onto the substrate 10 to spread more easily over the substrate, preventing unfilled defects.

[0080] Next, the substrate 10 in the application station 101 is transferred to the flattening station 102 by the inter-station transport mechanism 103 (step 3). In the flattening station 102, the substrate stage 4 of the flattening station 102 is moved to below the mold holding unit 3 by a substrate transport device (not shown).

[0081] Thereafter, the second gas is supplied from the second supply mechanism 7 to the space between the curable composition 12 on the substrate 10 in the flattening station 102 and the superstrate 8 (step 4). By supplying the second gas, the first gas dissolved in the curable composition 12 is degassed from the curable composition 12. The first gas has a high solubility in the curable composition 12, and if the first gas is cured while still dissolved in the curable composition 12, the curable composition 12 is released from the cured curable composition pattern after the superstrate is released (step 7) described later, and the curable composition pattern shrinks, resulting in a decrease in flatness. For this reason, it is desirable to degas the first gas from the curable composition 12 before the curable composition 12 is cured and while there is a space for the first gas to escape. At this time, the space between the curable composition on the substrate and the superstrate may be depressurized to promote the release of the first gas. The curable composition on the substrate may be heated to promote the release of the first gas.

[0082] Next, the superstrate 8 is imprinted onto the curable composition 12 on the substrate in the planarizing station 102 by a superstrate driving mechanism (not shown), thereby forming the curable composition 12 (step 5). In this state, the illumination system 2 irradiates ultraviolet light from the upper surface (rear surface) of the superstrate 8, and the curable composition is cured by the ultraviolet light transmitted through the superstrate 8 (step 6). Then, after the curable composition 12 is cured, the superstrate driving mechanism is driven again to separate the superstrate 8 from the substrate 10 (step 7). At this time, the first gas is not degassed from the curable composition 12, so that the curable composition pattern does not shrink due to the degassed first gas, and flatness is maintained.

[0083] As described above, according to this embodiment, by having the application station 101 and the flattening station 102, more rapid gas exchange is possible, and a flattening apparatus and method can be provided that are advantageous in achieving both filling ability and flatness.

[0084] <Fifth embodiment> Next, a planarization apparatus according to a seventh embodiment will be described with reference to FIG. 9. This planarization apparatus is used in the manufacture of device articles such as semiconductor devices, and is an apparatus for forming a flat surface pattern (typically a pattern of the curable composition) on a substrate, which is an object to be processed, by molding the curable composition (typically an uncured curable composition) on the substrate using a mold (superstrate) having a flat surface. Note that the planarization apparatus in this embodiment employs a photocuring method. In the following figures, the Z axis is taken parallel to the optical axis of the illumination system that irradiates the curable composition on the substrate with ultraviolet light, and the X axis and the Y axis are taken perpendicular to each other in a plane perpendicular to the Z axis. This planarization apparatus 1 includes an application station 101, a planarization station 102, and an inter-station transport mechanism 103.

[0085] The application station 101 includes a substrate stage 4 , an application means 5 , and a first supply mechanism 6 .

[0086] The substrate stage 4 is a holding unit that holds the substrate 10 by, for example, vacuum suction and has a substrate chuck 11 that allows it to move within the XY plane. Here, the substrate 10 is a workpiece made of, for example, single crystal silicon, and a curable composition 12 formed by a superstrate 8 is applied to the workpiece surface.

[0087] The application means 5 is an application means that applies a curable composition 12 (uncured curable composition) onto the substrate 10. Here, the curable composition 12 is a photocurable composition that has the property of being cured by receiving ultraviolet light, and is appropriately selected depending on the manufacturing process of the semiconductor device, etc.

[0088] The first supply mechanism 6 supplies a first gas toward the substrate 10 in a applying step in which the curable composition 12 is applied onto the substrate 10. The first gas supplied from the first supply mechanism 6 may be clean dry air, an inert gas such as nitrogen, or the like. The first supply mechanism 6 also includes a valve 22, a gas supply control unit 23 that controls the amount of gas supplied, and a gas supply nozzle 24.

[0089] The flattening station 102 includes an illumination system 2, a mold holding unit 3, a substrate stage 4, and a second supply mechanism 7.

[0090] The illumination system 2 is an illumination means for irradiating the superstrate 8 with ultraviolet light during the imprint process. Although not shown, the illumination system 2 is composed of a light source and an optical element for adjusting the ultraviolet light emitted from the light source to light suitable for imprinting. The superstrate 8 is a mold having a very flat surface on the side facing the substrate 10 having projections and recesses. The material of the superstrate 8 is a material that can transmit ultraviolet light, such as quartz.

[0091] The mold holding unit 3 is a holding unit that attracts and holds the superstraight 8 by vacuum suction force or electrostatic force. This mold holding unit 3 includes a superstraight chuck 9 and a mold driving mechanism (not shown) that drives the mold holding unit 3 in the Z-axis direction to press the superstraight 8 against the ultraviolet-curable composition applied on the substrate 10. Note that the pressing and releasing operations in the flattening apparatus 1 may be realized by moving the superstraight 8 in the Z direction as described above, but may also be realized by moving the substrate stage 4 (substrate 10) in the Z direction, for example, or both may be moved.

[0092] The substrate stage 4 is a holding unit that holds the substrate 10 by, for example, vacuum suction and has a substrate chuck 11 that allows it to move within the XY plane. Here, the substrate 10 is a workpiece made of, for example, single crystal silicon, and a curable composition 12 formed by a superstrate 8 is applied to the workpiece surface.

[0093] The second supply mechanism 7 is a supply means (supply unit) that supplies a second gas toward the imprinting position after the curable composition 12 is applied onto the substrate 10, until the imprinting where the superstrate 8 and the curable composition 12 on the substrate 10 are pressed against each other. This second gas desirably includes a permeable gas supply unit 31 that supplies a permeable gas having a property of dissolving or diffusing in at least one of the superstrate 8 and the substrate 10. Here, gases such as helium and hydrogen can be used as the permeable gas. However, when flammable hydrogen is used as the permeable gas, it is necessary to separately install an explosion-proof system in the imprinting apparatus 1 and to configure the apparatus with caution against fire.

[0094] Next, a description will be given of the planarization process performed by the planarization apparatus 1. Fig. 10 shows a flowchart of the planarization method according to this embodiment.

[0095] 9, a substrate 10 having projections and recesses is placed and fixed on a substrate stage 4 by a substrate transport device (not shown), and then the substrate stage 4 is moved to a deposition position of a curable composition deposition means 5. Then, a first gas is supplied from a first supply mechanism 6 to a space above the substrate 10 (step 1).

[0096] Next, the curable composition 12 is applied onto the substrate 10 from the application means 5 of the application station 101 (step 2). The amount of the curable composition 12 discharged from the curable composition application means 5 onto each part of the substrate is adjusted based on the uneven layout of the substrate. At this time, by using clean dry air, nitrogen, or the like as the first gas, the amount of helium or hydrogen used as the second gas can be reduced.

[0097] Next, the substrate 10 in the application station 101 is transferred to the flattening station 102 by the inter-station transport mechanism 103 (step 3). In the flattening station 102, the substrate stage 4 of the flattening station 102 is moved to below the mold holding unit 3 by a substrate transport device (not shown).

[0098] Thereafter, a second gas is supplied from a second supply mechanism 7 to the space between the curable composition 12 on the substrate 10 and the superstrate 8 in the planarizing station 102 (step 4).

[0099] Next, the superstrate 8 is imprinted onto the curable composition 12 on the substrate in the planarizing station 102 by a superstrate driving mechanism (not shown), thereby forming the curable composition 12 (step 5). In this state, the illumination system 2 irradiates ultraviolet light from the upper surface (rear surface) of the superstrate 8, and the curable composition is cured by the ultraviolet light transmitted through the superstrate 8 (step 6). Then, after the curable composition 12 has cured, the superstrate driving mechanism is driven again to separate the superstrate 8 from the substrate 10 (step 7).

[0100] As described above, according to this embodiment, by providing the application station 101 and the planarizing station 102, more rapid gas exchange is possible, and a planarizing apparatus and method with good productivity can be provided.

[0101] Sixth Embodiment Next, a flattening apparatus according to the sixth embodiment will be described with reference to FIG. 11. FIG. 11 is a diagram showing a flattening apparatus according to the sixth embodiment. This flattening apparatus is used in the manufacture of device articles such as semiconductor devices, and is an apparatus for forming a flat surface pattern (typically a pattern of the curable composition) on a substrate, which is an object to be processed, by molding the curable composition (typically an uncured composition) on the substrate without using a flat mold. Note that the flattening apparatus here employs a photocuring method. In addition, in the following figures, the Z axis is taken parallel to the optical axis of the illumination system that irradiates the curable composition on the substrate with ultraviolet light, and the X axis and the Y axis are taken orthogonal to each other in a plane perpendicular to the Z axis. This flattening apparatus 1 includes an illumination system 2, a substrate stage 4, an application means 5, a first supply mechanism 6, and a second supply mechanism 7. Since molding is performed without using a flat mold, there is no mold holding unit 3 or superstrate 8 that is present in the flattening apparatus according to the first embodiment based on FIG. 1.

[0102] Next, a description will be given of the planarization process performed by the planarization apparatus 1. Fig. 12 shows a flowchart of the planarization method according to this embodiment.

[0103] First, a first gas is supplied from a first supply mechanism 6 to the curable composition 12 in the application means 5 of Fig. 11 (Step 1). The first gas dissolves in the curable composition 12 in the application means 5, and the viscosity decreases.

[0104] Next, the substrate 10 having projections and recesses is placed and fixed on the substrate stage 4 by a substrate transport device (not shown), and the substrate stage 4 is then moved to the application position of the curable composition application means 5. Then, the curable composition 12 is applied onto the substrate 10 from the curable composition application means 5 (step 2). The amount of the curable composition 12 dispensed from the curable composition application means 5 onto each part of the substrate is adjusted based on the layout of projections and recesses of the substrate. The curable composition 12 dispensed onto the substrate 10 spreads over the substrate, but the first gas dissolves in the curable composition application means 5, reducing the viscosity, improving the spread over the substrate and preventing unfilled defects.

[0105] Next, a second gas is supplied from the second supply mechanism 7 to the space above the curable composition 12 on the substrate 10 (step 3). By supplying the second gas, the first gas dissolved in the curable composition 12 is degassed from the curable composition 12. The first gas has high solubility in the curable composition 12, and if the first gas is cured while still dissolved in the curable composition 12, the first gas released from the curable composition pattern causes the curable composition pattern to shrink, resulting in a decrease in flatness. For this reason, it is desirable to degas the first gas from the curable composition 12 before the curable composition 12 is cured.

[0106] Next, the curable composition is cured by irradiating it with ultraviolet light from the illumination system 2 (step 4). At this time, the first gas is not degassed from the curable composition 12, so that the curable composition pattern does not shrink due to the degassing first gas, and flatness is maintained.

[0107] As described above, according to the present embodiment, it is possible to provide a planarizing apparatus and method that are advantageous in achieving both good filling properties and good flatness.

[0108] Seventh embodiment Next, a flattening apparatus according to the seventh embodiment will be described with reference to FIG. 13. FIG. 13 is a diagram showing a flattening apparatus according to the seventh embodiment. This flattening apparatus is used in the manufacture of device articles such as semiconductor devices, and is an apparatus for forming a flat surface pattern (typically a pattern of the curable composition) on a substrate, which is an object to be processed, by molding the curable composition (typically an uncured composition) on the substrate without using a flat mold. Note that the flattening apparatus here employs a photocuring method. In addition, in the following figures, the Z axis is taken parallel to the optical axis of the illumination system that irradiates the curable composition on the substrate with ultraviolet light, and the X axis and the Y axis are taken orthogonal to each other in a plane perpendicular to the Z axis. This flattening apparatus 1 includes an illumination system 2, a substrate stage 4, an application means 5, a first supply mechanism 6, and a second supply mechanism 7. Since molding is performed without using a flat mold, there is no mold holding unit 3 or superstrate 8 that is present in the flattening apparatus according to the second embodiment based on FIG. 5.

[0109] Next, a description will be given of the planarization process performed by the planarization apparatus 1. Fig. 14 shows a flowchart of the planarization method according to this embodiment.

[0110] First, a substrate 10 having projections and recesses is placed and fixed on a substrate stage 4 by a substrate transport device not shown in Fig. 12, and then the substrate stage 4 is moved to an application position of a curable composition application means 5. Then, a first gas is supplied from a first supply mechanism 6 to a space above the substrate 10 (step 1).

[0111] Next, the curable composition 12 is applied onto the substrate 10 from the curable composition application means 5 (Step 2). The amount of the curable composition 12 dispensed from the curable composition application means 5 onto each part of the substrate is adjusted based on the uneven layout of the substrate. At this time, the viscosity of the curable composition 12 decreases as the first gas dissolves. The reduced viscosity improves the spread of the curable composition 12 dispensed onto the substrate 10 on the substrate, and by providing a predetermined waiting time, a flat liquid surface of the curable composition is formed and unfilled defects can be prevented.

[0112] Next, a second gas is supplied from the second supply mechanism 7 to the space above the curable composition 12 on the substrate 10 (step 3). By supplying the second gas, the first gas dissolved in the curable composition 12 is degassed from the curable composition 12. The first gas has high solubility in the curable composition 12, and if the first gas is cured while still dissolved in the curable composition 12, the first gas released from the curable composition pattern causes the curable composition pattern to shrink, resulting in a decrease in flatness. For this reason, it is desirable to degas the first gas from the curable composition 12 before the curable composition 12 is cured.

[0113] Next, the curable composition is cured by irradiating it with ultraviolet light from the illumination system 2 (step 4). At this time, the first gas is not degassed from the curable composition 12, so that the curable composition pattern does not shrink due to the degassing first gas, and flatness is maintained.

[0114] As described above, according to the present embodiment, it is possible to provide a planarizing apparatus and method that are advantageous in achieving both good filling properties and good flatness. [Explanation of symbols]

[0115] 1 Flattening device 5. Means of Granting 6 First supply mechanism 7 Second supply mechanism 8 Super Straight (flat surface type) 10 Substrate with unevenness 12 Curable composition

Claims

1. An application means for applying a curable composition onto a substrate; A curing means for curing the curable composition; A molding apparatus having a first supplying means for supplying a first gas to the curable composition, the first gas causing a decrease in viscosity of the curable composition, and a degassing means for degassing the first gas from the curable composition after it has been supplied by the first supplying means; A molding apparatus comprising:

2. 2. The molding apparatus of claim 1, further comprising a mold holding means for holding a mold in contact with the curable composition on the substrate.

3. 3. The molding apparatus according to claim 2, wherein the mold has a flat surface and flattens the surface of the substrate.

4. The molding apparatus according to any one of claims 1 to 3, wherein the first gas contains at least one of a hydrofluoroether and a hydrofluoroether.

5. 3. The molding apparatus according to claim 2, wherein the first supplying means is a means for supplying a first gas to a space between the applied curable composition and the mold.

6. 5. The molding apparatus according to claim 1, wherein the first supplying means is a means for supplying the first gas to the curable composition before it is applied by the applying means.

7. 7. The molding apparatus according to claim 1, wherein the degassing means is a second supplying means for supplying a second gas that promotes degassing of the first gas from the curable composition.

8. 8. The molding apparatus according to claim 7, wherein the second gas is any one of an inert gas, hydrogen, and air.

9. 3. The molding apparatus according to claim 2, wherein the degassing means has a decompression mechanism for decompressing a space between the curable composition on the substrate and the mold.

10. 7. The molding apparatus according to claim 1, wherein the degassing means has a heating mechanism for heating the curable composition on the substrate.

11. 9. The molding apparatus according to claim 7, wherein the first supplying means and the second supplying means are provided in different processing areas separated from each other.

12. 12. A method for producing an article, comprising: a step of applying a curable composition onto a substrate using the molding apparatus according to claim 1; and a step of imprinting the curable composition on the substrate with a mold having a flat surface.

13. applying a curable composition onto a substrate; a curing step of curing the curable composition on the substrate; A method for molding a curable composition comprising the steps of: forming a film of the curable composition incorporating a first gas that causes a decrease in viscosity on a substrate; Allowing the first gas to escape from the curable composition prior to curing A molding method comprising the steps of:

14. The molding method according to claim 13, further comprising the step of aerating the first gas through the curable composition on the substrate to reduce viscosity.

15. The molding method according to claim 13, further comprising the step of applying the curable composition incorporating the first gas onto the substrate.

16. A planarization method using the molding method according to any one of claims 13 to 15, wherein the film of the curable composition is cured to form a flat surface.

17. The planarization method according to claim 16, further comprising the step of contacting the curable composition with a mold having a flat surface to obtain a film having a flat surface.

18. 17. The method for planarizing a substrate according to claim 16, further comprising the step of waiting until the curable composition on the substrate forms a flat surface without contacting a mold.

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