Drop recipe creation method, pattern formation method, and semiconductor device manufacturing method

Abstract

To provide a creation method for a drop recipe capable of forming a more appropriate resin on a wafer.SOLUTION: A creation method for a drop recipe includes: acquiring a feature amount based on a pattern shape of a master template by measuring the pattern shape of the master template; setting a drip amount of a resist required for forming a transfer pattern part on a transfer destination wafer based on the feature amount of the master template; setting a drip amount of a resist required for forming a remaining film part of the resist on the transfer destination wafer; and creating a drop recipe based on the drip amount of the resist corresponding to the transfer pattern part and the drip amount of the resist corresponding to the remaining film part.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] An embodiment of the present invention relates to a drop recipe creating method, a pattern forming method, and a semiconductor device manufacturing method. [Background technology]

[0002] A pattern formation method using nanoimprinting is known as a method for forming a fine pattern on a substrate. In this method, resist is dropped onto a substrate based on a drop recipe, and then a template is pressed against the resist. The drop recipe is created based on design information for the concave-convex pattern formed on the template. Next, the resist is hardened by irradiating it with ultraviolet light, and then the template is separated from the resist, thereby forming a pattern corresponding to the template on the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-213130 ​​A Summary of the Invention [Problem to be solved by the invention]

[0004] Due to variations in each process in the manufacturing process of the template, the uneven shape finally formed on the template may deviate from an ideal shape corresponding to the design values. If a resin resist is formed on a substrate using such a template, there is a risk that a resin having an unintended thickness or shape will be formed on the substrate.

[0005] According to the disclosed embodiments, a drop recipe creating method, a pattern forming method, and a semiconductor device manufacturing method capable of forming a more suitable resin on a substrate are provided. [Means for solving the problem]

[0006] A drop recipe creation method of an embodiment is a method for creating a drop recipe used for imprinting, which measures the pattern shape of the template to obtain features based on the pattern shape of the template, sets the amount of resin to be dispensed required to form a transfer pattern portion on a substrate corresponding to the pattern shape of the template based on the features, sets the amount of resin to be dispensed required to form a remaining film portion of the resin on the substrate, and creates a drop recipe based on the amount of resin to be dispensed corresponding to the transfer pattern portion and the amount of resin to be dispensed corresponding to the remaining film portion. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a block diagram showing a schematic configuration of an imprint apparatus according to the first embodiment. [Diagram 2] FIG. 2 is a perspective view showing a perspective structure of the master template of the first embodiment. [Diagram 3] FIG. 3 is a cross-sectional view showing a cross-sectional structure of the master template of the first embodiment. [Figure 4] FIG. 4 is a perspective view showing a perspective structure of the destination substrate of the first embodiment. [Diagram 5] FIG. 5 is a flowchart showing the procedure of the imprint process according to the first embodiment. [Figure 6] 6(A) to (D) are cross-sectional views showing a part of the procedure of the imprint process of the first embodiment. [Figure 7] 7(A) to (C) are cross-sectional views showing a part of the procedure of the imprint process of the first embodiment. [Figure 8] 8A and 8B are cross-sectional views showing the cross-sectional structures of the master template and the destination substrate of the first embodiment, respectively. [Figure 9] FIG. 9 is a block diagram showing a schematic configuration of the imprint system according to the first embodiment. [Figure 10] FIG. 10 is a flowchart showing a procedure for creating a correction map in the first embodiment. [Figure 11]FIG. 11 is a diagram illustrating a shot area of ​​the master template according to the first embodiment. [Figure 12] 12A and 12B are cross-sectional views showing the actual cross-sectional shape and the ideal cross-sectional shape, respectively, of a convex portion of the master template of the first embodiment. [Figure 13] 13A and 13B are diagrams showing an example of a correction map according to the first embodiment. [Figure 14] FIG. 14 is a flowchart showing the procedure of the drop recipe creating method according to the first embodiment. [Figure 15] FIG. 15 is a flowchart showing the procedure of a drop recipe creating method according to the second embodiment. [Figure 16] 16(A) to 16(G) are cross-sectional views showing an example of a method for manufacturing a semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment will be described with reference to the drawings. In order to facilitate understanding of the description, the same components in the drawings are denoted by the same reference numerals as much as possible, and duplicated description will be omitted. First Embodiment (Schematic configuration of imprint device) The imprint apparatus 10 of this embodiment shown in FIG. 1 is an apparatus that executes an imprint process that uses a master template 20 to form a resist 40 on a destination substrate 30. The resist 40 is made of resin. A replica template is formed by performing an etching process or the like on the destination substrate 30 on which the resist 40 has been formed. The replica template is used to form a pattern portion on a silicon wafer or the like in the manufacturing process of a semiconductor device. By forming a plurality of replica templates from the master template 20, it is possible to improve the productivity of semiconductor devices.

[0009] As shown in FIG. 1, the imprint apparatus 10 includes a substrate stage 11, a template stage 12, a coating device 13, an irradiation unit 14, and a control device 15. The master template 20 and the destination substrate 30 are formed of a material capable of transmitting ultraviolet light, such as quartz glass. As shown in FIG. 2, a pattern portion 22 having an uneven shape as shown in FIG. 3 is formed in a predetermined shot region 21 on the surface of the master template 20 by, for example, electron beam lithography. The shape of the pattern portion 22 corresponds to the shape of the resist 40 to be formed on the destination substrate 30. In this embodiment, the shape of the pattern portion 22 corresponds to the pattern shape. As shown in FIG. 4, the destination substrate 30 has a mesa portion 31 formed thereon, which has a shape that protrudes more than other portions. The upper surface of the mesa portion 31 is a transfer surface 32 to which the pattern portion 22 of the master template 20 is transferred.

[0010] 1 holds the destination substrate 30 by vacuum suction force, electrostatic force, etc. The substrate stage 11 has a function of displacing the destination substrate 30 in the X direction and Y direction in the figure, a function of positioning the destination substrate 30, etc. The template stage 12 holds the master template 20 by vacuum suction force, electrostatic force, or the like. The template stage 12 has a function of displacing the master template 20 in the Z direction. This makes it possible to bring the pattern portion 22 of the master template 20 into contact with the resist 40 on the destination substrate 30 and to separate the master template 20 from the resist 40.

[0011] The coating device 13 is a device that coats the destination substrate 30 with the resist 40. The coating device 13 has a supply unit 130 and a dispenser 131. The supply unit 130 supplies the resist 40, which is an uncured resin, to the dispenser 131. The dispenser 131 has a plurality of nozzles, and drops the resist from these nozzles onto the destination substrate 30. The unit of the amount of resist dropped by the dispenser 131 is "drop," and the amount of resist per drop is approximately several picoliters.

[0012] During the imprint process, the irradiation unit 14 irradiates the resist 40 applied on the destination substrate 30 with ultraviolet light to harden the resist 40 . The control device 15 is mainly configured with a microcomputer having a CPU, a storage device 150, etc. A drop recipe 151 and the like are stored in the storage device 150. The drop recipe 151 indicates the drop position and drop amount of the resist 40 onto the destination substrate 30. The control device 15 controls the substrate stage 11, the template stage 12, the coating device 13, and the irradiation unit 14 based on the drop recipe 151 and the like.

[0013] Next, an example of the operation of the imprint apparatus 10 will be described. 5, the control device 15 first controls the template stage 12 to hold the master template 20 (step S10), and controls the substrate stage 11 to hold the destination substrate 30 (step S11). Note that, as shown in FIG. 6(A), a hard mask 50 is formed in a thin film on the transfer surface 32 of the destination substrate 30. The hard mask 50 is provided to prevent the destination substrate 30 made of quartz glass from being scraped when unnecessary resist 40 is removed from the destination substrate 30.

[0014] 5, the control device 15 reads the drop recipe 151 stored in the storage device 150 (step S12), and applies the resist 40 onto the destination substrate 30 based on the read drop recipe 151 (step S13). Specifically, the control device 15 controls the ejection of droplets from each nozzle of the dispenser 131 based on the drop recipe 151 while moving the destination substrate 30 in the X direction.

[0015] Next, the control device 15 further drives the substrate stage 11 to move the region of the destination substrate 30 where the resist 40 is applied to below the master template 20 as shown in Fig. 1 (step S14). Furthermore, the control device 15 drives the template stage 12 to bring the master template 20 closer to the destination substrate 30 and press the pattern portion 22 of the master template 20 against the resist 40 on the destination substrate 30 (step S15). As a result, as shown in Fig. 6(B), the resist 40 flows into and fills the irregularities of the pattern portion 22 of the master template 20 over time.

[0016] 5, the control device 15 drives the irradiation unit 14 to irradiate the resist 40 on the destination substrate 30 with ultraviolet light for a predetermined time, thereby hardening the resist 40 (step S16). Furthermore, the control device 15 drives the template stage 12 to separate the master template 20 from the destination substrate 30 (step S17). As a result, a resist 40 having a shape as shown in FIG. 6(C) is formed on the destination substrate 30. The resist 40 has a residual film portion 41 having a substantially constant film thickness and a pattern portion 42 formed to protrude from the residual film portion 41. In this embodiment, the pattern portion 42 corresponds to a transfer pattern portion.

[0017] After the resist 40 is formed on the destination substrate 30 in this manner, a process is performed to remove only the portion of the remaining resist film portion 41 where the resist pattern portion 42 is not formed. As a result, as shown in Fig. 6(D), only the resist pattern portion 42 remains on the transfer surface 32 of the destination substrate 30, and part of the hard mask 50 is exposed in the portion where the resist pattern portion 42 is not provided.

[0018] 7(A), the exposed hard mask 50 is cut and removed to expose a part of the transfer surface 32 of the destination substrate 30, and then an etching process is performed on the exposed part of the transfer surface 32 of the destination substrate 30. As a result, a recess is formed in the destination substrate 30 as shown in FIG. 7(B). Then, a process is performed to remove the remaining resist pattern portion 42 and the hard mask 50 from the destination substrate 30, so that convex portions remain in the portions where the resist pattern portion 42 was present, and concave portions remain in the portions where the resist pattern portion 42 was not present, as shown in FIG. 7(C). In this manner, a replica template is formed on the destination substrate 30.

[0019] When the replica template is formed through the above-mentioned process, if the pattern portion 22 of the master template 20 has an ideal shape based on design data or the like as shown in FIG. 8(A), the film thickness of the resist remaining film portion 41 is likely to be uniform, so that a more appropriate replica template can be manufactured. However, in reality, due to variations in processing accuracy when forming the pattern portion 22 on the master template 20, variations occur in the dimensions and the engraving depth of the pattern portion 22 of the master template 20. As a result, as shown in FIG. 8(B), the shape of the pattern portion 22 of the master template 20 may deviate from the ideal shape. In such a case, when the resist 40 is applied to the transfer destination substrate 30 using the drop recipe 151 corresponding to the ideal master template 20, a mismatch occurs between the shape of the actual pattern portion 22 of the master template 20 and the volume of the resist 40 applied to the transfer destination substrate 30. As a result, if the resist 40 having an unintended thickness or shape is formed on the transfer destination substrate 30, the forming accuracy of the replica template may be reduced.

[0020] Therefore, in this embodiment, the shape of the pattern portion 22 of the master template 20 is measured in advance, and then the drop recipe 151 is corrected according to the measurement results, thereby creating a more appropriate drop recipe 151 that corresponds to the actual shape of the pattern portion 22 of the master template 20. Hereinafter, a method for creating the drop recipe 151 of this embodiment will be specifically described.

[0021] (System Configuration) 9 shows a schematic configuration of the imprint system 1 of this embodiment. As shown in Fig. 9, the imprint system 1 includes a shape measuring device 60 in addition to the imprint apparatus 10 shown in Fig. 1.

[0022] The shape measuring device 60 is a device capable of measuring the shape of the pattern portion 22 of the master template 20 as shown in FIG. 3. The shape measuring device 60 is a device capable of measuring the shape using, for example, a CD-SAXS (critical dimension small angle X-ray scattering) method. The shape measuring device 60 using the CD-SAXS method is capable of three-dimensional dimensional measurement with an accuracy higher than 1 [nm], and can measure not only the surface shape but also the internal structure. In addition, this shape measuring device 60 is capable of obtaining average information in a predetermined region, for example, the average shape within a predetermined region.

[0023] (Drop recipe creation procedure) Next, a specific procedure for creating the drop recipe 151 will be described. In the following, an example will be described in which the convex portions 220 of the pattern portion 22 of the master template 20 shown in Fig. 3 have the same shape. That is, the height H of each of the convex portions 220 is the same, and the width W of each of the convex portions 220 is also the same.

[0024] 10, when creating a drop recipe 151, first, the shape of the shot region 21 of the master template 20 is measured by the shape measuring device 60 (step S20). Specifically, as shown by the two-dot chain line in FIG. 11, for example, the shot region 21 is divided into 16 regions PM 1 ~PM 16 Then, the divided area PM 1 ~PM 16 The shape of the convex portion 220 of the pattern portion 22 located in each of the divided regions PM 1 12(A) is measured by the shape measuring device 60, the shape measuring device 60 outputs a cross-sectional shape as shown by the solid line in FIG. 1 12A shows an average cross-sectional shape of the protrusion 220. The two-dot chain line shown in FIG. 12A shows an ideal cross-sectional shape of the protrusion 220. 1 ~PM 16 The shape of each of the divided regions PM is measured by the shape measuring device 60, and the measurement results of the cross-sectional shape as shown in FIG. 1 ~PM 16 The above can be obtained by each of the above.

[0025] 10, based on the measurement result of step S20, the feature amount of the pattern portion 22 of the master template 20 is calculated (step S21). 1 12A is obtained in step S20 as the average cross-sectional shape of the protrusion 220. In this case, the area of ​​the region shown by dotted hatching in FIG. 12A, that is, the actual cross-sectional area AM 1 The actual cross-sectional area AM of the protrusion 220 is calculated. 1 The width used in determining the width is set to the width of the ideal cross-sectional shape of the protrusion 220. The ideal cross-sectional shape is, for example, a cross-sectional shape based on design data. In step S21, each divided region PM 1 ~PM 16 The average cross-sectional area AM of the protrusion 2201 ~AM 16 In this embodiment, each divided region PM 1 ~PM 16 The cross-sectional area AM of the protrusion 220 1 ~AM 16 This information corresponds to the feature amount of the pattern portion 22 of the master template 20.

[0026] 10, a correction map M10 is created to correct the amount of resist 40 dispensed from the applicator 13 onto the destination substrate 30 (step S22). Specifically, if the ideal shape of the convex portion 220 of the master template 20 is as shown in FIG. 12(B), the area of ​​the region indicated by dotted hatching in FIG. 12(B), that is, the ideal cross-sectional area A of the convex portion 220, is 0 The value of can be obtained from the design data of the master template 20. 1 The correction value α of the amount of resist 40 dispensed corresponding to 1 "AM 1 / A 0 In other words, if n=1, 2, . . . , 16, the division region PM n Correction value α n Set.

[0027] α n =AM n / A 0 (f1) In this manner, the creation of the correction map M10 as shown in FIG. 1 ~PM 16 For each of the above, a correction value α 1 ~α 16 Each correction value α of the correction map M10 is determined. 1 ~α 16is set to, for example, the value shown in FIG. 13B. In areas where the correction value is set to "1.0", the basic drip amount is used as is. In areas where the correction value is smaller than "1.0", the drip amount is corrected to be smaller than the basic drip amount. In areas where the correction value is larger than "1.0", the drip amount is corrected to be larger than the basic drip amount.

[0028] After the correction map M10 is created in this manner, the drop recipe 151 is created in accordance with the procedure shown in FIG. Specifically, first, a basic dispensing amount Dpb of the resist 40 required for forming the resist pattern portion 42 on the transfer destination substrate 30 is calculated based on the design data of the master template 20 (step S30). Next, based on the basic dispensing amount Dpb of the resist pattern portion 42 calculated in step S30 and the correction map M10 obtained by the procedure shown in FIG. 1 ~PM 16 The drop amount Dp of the resist pattern portion 42 corresponding to each of 1 ~Dp 16 is calculated based on the following formula f2, for example (step S31), where n=1, 2, . . . , 16 in formula f2.

[0029] Dp n = α n ×Dpb (f2) In this embodiment, the pattern portion dropping amount Dp 1 ~Dp 16 corresponds to the amount of resin dispensed corresponding to the transfer pattern portion. On the other hand, such a pattern portion drop amount Dp 1 ~Dp 16 In parallel with the calculation of the amount Dr of the resist remaining film portion 41, the area of ​​the shot region 21 is calculated from the design data of the master template 20 (step S32). In addition, the thickness of the resist remaining film portion 41 is set (step S33). The thickness of the resist remaining film portion 41 is set arbitrarily.

[0030] After steps S32 and S33 are performed, the dropping amount Dr of the resist remaining film portion 41 is calculated based on the area of ​​the shot region 21 and the thickness of the resist remaining film portion 41 (step S34). The area of ​​the shot region 21 of the master template 20 is approximately equal to the area of ​​the mesa portion 31 of the destination substrate 30. Therefore, the dropping amount Dr of the resist remaining film portion 41 can be calculated by multiplying the area of ​​the shot region 21 by the thickness of the resist remaining film portion 41. In this embodiment, the dropping amount Dr of the remaining film portion corresponds to the dropping amount of resin corresponding to the remaining film portion.

[0031] In this way, the pattern portion drop amount Dp 1 ~Dp 16 After calculating the residual film portion dropping amount Dr and the remaining film portion dropping amount Dr, they are combined to create a drop recipe 151 (step S35). Next, this drop recipe 151 is stored in the storage device 150 of the control device 15 shown in FIG. 1, and then the imprint apparatus 10 is driven to imprint the resist 40 on the destination substrate 30 (step S36).

[0032] (effect) As described above, the method for creating the drop recipe 151 of this embodiment includes a measurement step S20 shown in Fig. 10, a drop amount calculation step S31 and S34 shown in Fig. 14, and a drop recipe creation step S35. The measurement step S20 is a step for measuring the shape of the master template 20 to obtain the cross-sectional area of ​​the convex portion 220, which is a feature amount of the master template 20. The drop amount calculation step S31 is a step for calculating the pattern portion drop amount Dp based on the cross-sectional area of ​​the convex portion 220 of the master template 20. 1 ~Dp 16 The dropping amount calculation step of step S34 is a step of calculating the remaining film portion dropping amount Dr. The drop recipe creation step of step S35 is a step of calculating the pattern portion dropping amount Dp 1 ~Dp 16and a process of creating a drop recipe 151 based on the remaining film portion dropping amount Dr. According to this method, it is possible to create a more appropriate drop recipe 151 that corresponds to the actual shape of the master template 20.

[0033] In the measurement process of step S20, a plurality of divided regions PM set in the shot region 21 of the master template 20 are 1 ~PM 16 In other words, the cross-sectional shapes of a plurality of points within the surface of the master template 20 on which the pattern portion 22 is formed are measured. According to this method, it is possible to obtain more appropriate feature amounts of the master template 20.

[0034] (Modification) In the measurement process of step S20, a plurality of divided regions PM set in the shot region 21 of the master template 20 are 1 ~PM 16 In other words, only one point within the surface of the master template 20 where the pattern portion 22 is formed may be measured.

[0035] <Second embodiment> Next, a second embodiment will be described, focusing on the differences from the first embodiment. 15, in the method for creating a drop recipe 151 of this embodiment, after imprinting the resist 40 on the destination substrate 30 in step S36, the shape of the resist pattern portion 42 of the destination substrate 30 on which the resist 40 is imprinted is measured by the shape measuring device 60 (step S40). Based on the measurement result, the cross-sectional area of ​​the convex portion 420 formed in the resist pattern portion 42 as shown in FIG. 8(B) is calculated (step S41). Each of steps S40 and S41 is the application of each of steps S20 and S21 shown in FIG. 10 to the destination substrate 30. That is, in steps S40 and S41, 16 divided regions PR are formed on the transfer surface 32 of the mesa portion 31 of the destination substrate 30. 1 ~PR16 are set in advance, and their divided regions PR 1 ~PR 16 The average cross-sectional area AR of the convex part 420 1 ~AR 16 In this embodiment, each divided region PR 1 ~PR 16 The cross-sectional area AR of the protrusion 420 1 ~AR 16 This information corresponds to the feature amount of the transfer pattern portion.

[0036] Following the process of step S41, it is determined whether or not the correction map M10 needs to be corrected (step S42). 1 ~AR 16 and the ideal cross-sectional area A of the convex portion 220 of the master template 20 0 Compared with the cross-sectional area AR 1 ~AR 16 Either of the ideal cross-sectional areas A 0 If the difference is equal to or greater than the predetermined value, it is determined that the correction map M10 needs to be corrected (step S42: YES). In this case, the correction map M10 is corrected (step S43). For example, the cross-sectional area AR 1 is the ideal cross-sectional area A 0 If the deviation is a predetermined value, the correction value α 1 When the correction map M10 is corrected in this manner, the corrected correction map M10 is used when the imprint process is performed thereafter. By using the corrected correction map M10, the pattern portion dropping amount Dp 1 ~Dp 16 will be corrected.

[0037] On the other hand, in the process of step S42, the cross-sectional area AR 1 ~AR 16 All of these have an ideal cross-sectional area A 0 If the deviation is not greater than the predetermined value, the correction map M10 is not corrected. That is, in this case, the same correction map M10 is used when the imprint process is performed thereafter.

[0038] Steps S44 to S46 are performed in parallel with steps S40 to S43. In step S44, the actual thickness of the resist remaining film portion 41 of the destination substrate 30 on which the resist 40 has been imprinted is measured. As indicated by the two-dot chain line in FIG. 9, the imprint system 1 of this embodiment further includes a film thickness measuring device 61 capable of measuring the thickness of the resist remaining film portion 41. The film thickness measuring device 61 is, for example, an optical film thickness meter. In step S44, for example, several hundred points on the resist remaining film portion 41 on the transfer surface 32 of the destination substrate 30 shown in FIG. 4 are measured by the film thickness measuring device 61, and the average of the measured values ​​is used as the actual thickness of the resist remaining film portion 41.

[0039] Following the process of step S44, it is determined whether or not the residual film portion dispensing amount Dr needs to be corrected (step S45). Specifically, the actual thickness of the resist residual film portion 41 obtained in the process of step S44 is compared with the set value of the thickness of the resist residual film portion 41 set in the process of step S33, and if the actual thickness of the resist residual film portion 41 deviates from the set value by a predetermined value or more, it is determined that the residual film portion dispensing amount Dr needs to be corrected (step S45: YES). In this case, the residual film portion dispensing amount Dr is corrected so that the deviation between the actual thickness of the resist residual film portion 41 and the set value becomes small (step S46). When the residual film portion dispensing amount Dr is corrected in this way, the corrected residual film portion dispensing amount Dr is used when the imprint process is performed thereafter.

[0040] On the other hand, in the process of step S45, if it is determined that it is not necessary to correct the remaining film portion dropping amount Dr (step S45: NO), the remaining film portion dropping amount Dr is not corrected. That is, in this case, the same remaining film portion dropping amount Dr is used when the imprint process is performed thereafter.

[0041] 15 is used for each of the successively molded destination substrates 30. Therefore, every time a destination substrate 30 is produced, the correction map M10 and the remaining film portion dropping amount Dr are feedback-corrected according to the shapes of the resist remaining film portion 41 and the resist pattern portion 42 of the destination substrate 30.

[0042] (effect) As described above, the method for creating the drop recipe 151 of this embodiment further includes a measurement step S40 and a correction step S43 shown in FIG. 15. The measurement step S40 is a step for measuring the resist pattern portion 42 formed on the destination substrate 30 to obtain the cross-sectional area of ​​the convex portion 420, which is a feature amount of the resist pattern portion 42. The correction step S43 is a step for correcting the correction map M10 based on the cross-sectional area of ​​the convex portion 420 of the resist pattern portion 42 to obtain the pattern portion dropping amount Dp 1 ~Dp 16 According to this method, the pattern portion dropping amount Dp is adjusted according to the shape of the resist pattern portion 42 of the transfer destination substrate 30 that is to be formed in sequence. 1 ~Dp 16 It is possible to perform feedback correction.

[0043] In the measurement process of step S40, a plurality of divided regions PR set on the transfer surface 32 of the transfer destination substrate 30 are 1 ~PR 16 By measuring the cross-sectional shapes of each of the resist patterns 42, the feature quantities of the resist pattern portion 42 are obtained. According to this method, it is possible to obtain more appropriate feature quantities of the resist pattern portion 42.

[0044] The method for creating a drop recipe 151 of this embodiment further includes a measurement step S44 and a correction step S46 shown in Fig. 15. The measurement step S44 is a step of acquiring the thickness, which is a characteristic amount of the resist remaining film portion 41, by measuring the resist remaining film portion 41 formed on the destination substrate 30. The correction step S46 is a step of correcting the remaining film portion dropping amount Dr based on the thickness of the resist remaining film portion 41. According to this method, it is possible to feedback correct the remaining film portion dropping amount Dr according to the thickness of the resist remaining film portion 41 of the destination substrate 30 that is successively molded.

[0045] In the measurement process of step S44, the thickness of the resist remaining film portion 41 is obtained by measuring a plurality of points on the transfer surface 32 of the destination substrate 30. According to this method, it is possible to obtain a more appropriate thickness of the resist remaining film portion 41. (First Modification) In the measurement step of step S40, a plurality of divided regions PM set on the transfer surface 32 of the transfer destination substrate 30 are 1 ~PM 16 In other words, only one point within the surface of the master template 20 where the pattern portion 22 is formed may be measured.

[0046] (Second Modification) In the measurement step of step S44, the thickness of the remaining resist film portion 41 at only one point on the transfer surface 32 of the destination substrate 30 may be measured. (Third Modification) In the correction process of step S43, the cross-sectional area AM of the convex portion 220 of the master template 20 calculated in the process of step S21 shown in FIG. 1 ~AM 16 The correction map M10 may be corrected by correcting the information on the cross-sectional area AR measured in the measurement process of step S40. 1 ~AR 16 Based on this, the cross-sectional area AM of the protrusion 220 of the master template 20 1 ~AM 16 Then, the cross section AM after correction is1 ~AM 16 The correction map M10 is corrected by performing the calculation of the above formula f1 again based on the information of In this modified example, the process of step S43 corresponds to the process of correcting the feature amount of the master template 20 based on the feature amount of the resist pattern portion 42.

[0047] <Other embodiments> The present disclosure is not limited to the above specific examples. For example, the measurement step S20 shown in FIG. 10 is not limited to a step of measuring the cross-sectional area of ​​the convex portion 220 as the feature amount of the master template 20, and may be a step of measuring, for example, the width, height, etc. of the convex portion 220.

[0048] Similarly, the measurement process of step S40 shown in Figure 15 is not limited to a process of measuring the cross-sectional area of ​​the convex portion 420 as a feature of the resist pattern portion 42 of the destination substrate 30, but may also be a process of measuring, for example, the width or height of the convex portion 420. The imprint apparatus 10 of the above embodiment is not limited to an apparatus that forms a pattern portion on a replica template using the master template 20, but may be an apparatus that forms a pattern portion on a silicon wafer or the like using the master template 20 or a replica template, for example.

[0049] The drop recipe creating method of the above embodiment can also be used when manufacturing semiconductor devices. Specifically, when manufacturing a semiconductor device, first, a film 110 to be processed is formed on a semiconductor substrate 100 as shown in FIG. 16(A), and then a resin 120 is dropped onto the film 110 to be processed as shown in FIG. 16(B). Then, a template 130 is made to face the semiconductor substrate 110 as shown in FIG. 16(C), and then a substrate stage (not shown) is raised, so that a concave-convex pattern 131 of the template 130 is brought into contact with the resin 120 on the substrate 100 as shown in FIG. 16(D). Then, while maintaining the state shown in FIG. 16(D), the resin 120 is cured by irradiating the resin 120 with ultraviolet light from a light source. Next, as shown in FIG. 16(E), a substrate stage (not shown) is lowered downward to separate the substrate 100 from the template 120, and then an etching process is performed on the substrate 100. In the etching process, the film 110 to be processed is etched using the resin 120 as a mask. Fig. 16(F) shows a schematic cross-sectional structure of the substrate 100 immediately after the etching process. Fig. 16(G) shows a schematic cross-sectional structure of the substrate 100 from which the resin 120 has been removed by ashing from the state shown in Fig. 16(F). Through these steps, a predetermined pattern is formed on the substrate 100.

[0050] In such a manufacturing method for a semiconductor device, a drop recipe is used in the step of dropping resin 120 onto the film to be processed 110 shown in Fig. 16(B). The method for creating this drop recipe can be applied to the method for creating the drop recipe in the above embodiment. Moreover, the method for creating the drop recipe in the above embodiment can be used not only for the manufacturing method for a semiconductor device but also for any pattern formation method.

[0051] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0052] 20: master template, 22: pattern portion, 30: transfer destination substrate, 40: resist (resin), 41: resist remaining film portion, 42: resist pattern portion (transfer pattern portion).

Claims

1. A method for creating a drop recipe for use in imprinting, comprising the steps of: A cross-sectional shape of a pattern portion of the template is measured. acquiring a feature amount of the pattern portion of the template based on the measured cross-sectional shape of the pattern portion and an ideal cross-sectional shape of the pattern portion acquired in advance; a dispensing amount of resin required to form a transfer pattern portion on a substrate corresponding to a pattern portion of the template based on the characteristic amount; A dripping amount of the resin required to form a residual film portion of the resin on the substrate is set; The drop recipe is created based on a dripping amount of the resin corresponding to the transfer pattern portion and a dripping amount of the resin corresponding to the remaining film portion. How to create drop recipes.

2. The measurement of the cross-sectional shape of the pattern portion of the template comprises: a surface of the template on which the pattern portion is formed is divided into a plurality of regions, and a cross-sectional shape of the pattern portion is measured for each of the plurality of regions; The acquisition of the feature amount of the template includes: The feature amount corresponding to each of the plurality of regions is obtained by using the cross-sectional shape of the pattern portion measured in each of the plurality of regions. The method for creating a drop recipe according to claim 1 .

3. after dropping the resin onto the substrate using the drop recipe, measuring a shape of the transfer pattern portion formed on the substrate using the template to obtain a feature amount of the transfer pattern portion; The amount of the resin to be dispensed corresponding to the transfer pattern portion is corrected based on the feature amount of the transfer pattern portion. The method for creating a drop recipe according to claim 1 or 2.

4. measuring a shape of a transfer pattern portion of the resin formed on the substrate by the template after dropping the resin onto the substrate using the drop recipe, thereby acquiring a feature amount of the transfer pattern portion; and correcting the feature amount of the template based on the feature amount of the transfer pattern portion. The method for creating a drop recipe according to claim 1 or 2.

5. The characteristic amount of the transfer pattern portion is acquired by measuring a cross-sectional shape of one or more points within a surface of the substrate on which the transfer pattern portion is formed. The method for creating a drop recipe according to claim 3 or 4.

6. measuring a shape of a residual film portion of the resin formed on the substrate by the template after dropping the resin onto the substrate using the drop recipe, thereby acquiring a feature amount of the residual film portion; The amount of the resin to be dropped corresponding to the remaining film portion is corrected based on the characteristic amount of the remaining film portion. The method for creating a drop recipe according to claim 1 or 2.

7. The characteristic amount of the residual film portion is acquired by measuring a cross-sectional shape of one or more points within a surface of the substrate on which the residual film portion is formed. The method for creating a drop recipe according to claim 6 .

8. The cross-sectional shape of the pattern portion is measured using a CD-SAXS method. The method for creating a drop recipe according to claim 1 or 2.

9. As the ideal cross-sectional shape of the pattern portion, a cross-sectional shape based on design data of the pattern portion is used. The method for creating a drop recipe according to claim 1 or 2.

10. The measurement of the cross-sectional shape of the pattern portion is performed by measuring an average cross-sectional shape of the pattern portion. The method for creating a drop recipe according to claim 1 or 2.

11. The feature amount of the pattern portion is acquired by acquiring a cross-sectional area of ​​a cross-sectional shape obtained by using a width of the ideal cross-sectional shape of the pattern portion in the measured cross-sectional shape of the pattern portion. The method for creating a drop recipe according to claim 1 or 2.

12. 1. A pattern forming method for imprinting a resin on a film to be processed based on a drop recipe, and processing the film to be processed based on a resin having a transfer pattern portion formed thereon, comprising: The drop recipe creation method according to any one of claims 1 to 11 is used as the drop recipe creation method. Pattern formation method.

13. 1. A method for manufacturing a semiconductor device, comprising the steps of: forming a processed film on a semiconductor substrate; imprinting on the processed film based on a drop recipe; and processing the processed film based on a resin having a transfer pattern portion formed thereon, The drop recipe creation method according to any one of claims 1 to 11 is used as the drop recipe creation method. A method for manufacturing a semiconductor device.

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