Electromagnetic wave attenuator and electronic device

Abstract

To provide an electromagnetic wave attenuation body and an electronic device that can stably attenuate an electromagnetic wave.SOLUTION: The electromagnetic wave attenuation body according to an embodiment includes a laminate member. The laminate member includes: a base body having a first surface with irregularities; a first conductive member containing Cu; and a first layer. The first layer is located between the first surface and the first conductive member. The first layer contains Cr and Ti.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present invention relate to an electromagnetic wave attenuator and an electronic device. [Background technology]

[0002] For example, electromagnetic wave attenuators such as electromagnetic shielding sheets have been proposed. There are electronic devices that include electromagnetic wave attenuators and semiconductor elements. wave It is desirable for the attenuator to stably attenuate electromagnetic waves. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-38807 A Summary of the Invention [Problem to be solved by the invention]

[0004] Advantageous Effects of Invention An embodiment of the present invention provides an electromagnetic wave attenuator and an electronic device capable of stably attenuating electromagnetic waves. [Means for solving the problem]

[0005] According to an embodiment of the present invention, an electromagnetic wave attenuator includes a laminated member. The laminated member includes a base having a first surface including projections and recesses, a first conductive member including Cu, and a first layer. The first layer is provided between the first surface and the first conductive member. The first layer includes Cr and Ti. [Brief description of the drawings]

[0006] [Figure 1] 1(a) and 1(b) are schematic cross-sectional views illustrating an electromagnetic wave attenuation body according to the first embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view illustrating the electromagnetic wave attenuation body according to the first embodiment. [Diagram 3]FIG. 3 is a schematic cross-sectional view illustrating the electromagnetic wave attenuation body according to the first embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view illustrating an electromagnetic wave attenuation body according to an embodiment. [Diagram 5] 5(a) to 5(d) are schematic views illustrating an electronic device according to the second embodiment. [Figure 6] 6(a) to 6(d) are schematic cross-sectional views illustrating a part of the electronic device according to the second embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view illustrating the electronic device according to the second embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating the electronic device according to the second embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view illustrating the electronic device according to the second embodiment. [Figure 10] FIG. 10 is a schematic cross-sectional view illustrating the electronic device according to the second embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view illustrating the electronic device according to the second embodiment. [Figure 12] FIG. 12 is a schematic cross-sectional view illustrating the electronic device according to the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) 1(a) and 1(b) are schematic cross-sectional views illustrating an electromagnetic wave attenuation body according to the first embodiment. Fig. 1(a) is an enlarged view of a portion of Fig. 1(b). As shown in Fig. 1(a) and Fig. 1(b), an electromagnetic wave attenuator 10 according to an embodiment includes a laminated member 10MA. As described below, the laminated member 10MA may include a first planar portion 10p and a side portion. Fig. 1(a) and Fig. 1(b) illustrate the first planar portion 10p.

[0009] The laminated member 10MA includes a base body 10s, a first conductive member 10C, and a first layer 15. The base body 10s includes a first surface 10f. The first surface 10f includes projections and recesses 10dp.

[0010] The first conductive member 10C contains Cu. The first layer 15 is provided between the base 10s (first surface 10f) and the first conductive member 10C. The first layer 15 contains Cr and Ti. The first layer 15 contains, for example, an alloy containing Cr and Ti.

[0011] 1, for example, the first conductive member 10C may be used while being grounded. For example, electromagnetic waves are incident on the first conductive member 10C. The electromagnetic waves incident on the first conductive member 10C are attenuated by the first conductive member 10C. The electromagnetic wave attenuator 10 can be used, for example, as an electromagnetic wave shield.

[0012] The electromagnetic wave attenuator 10 according to the embodiment can stably attenuate electromagnetic waves.

[0013] For example, a first layer 15 is provided in contact with the first surface 10f including the irregularities 10dp. A first conductive member 10C is provided in contact with the first layer 15. The electromagnetic wave attenuator 10 (for example, the first conductive member 10C) functions as, for example, an electromagnetic shield layer. The first conductive member 10C containing Cu attenuates the incident electromagnetic wave.

[0014] In the reference example, the first conductive member 10C is provided in contact with the base body 10s. In the reference example, the first conductive member 10C is easily peeled off from the base body 10s. In the reference example, it may be difficult to stably attenuate electromagnetic waves.

[0015] In the embodiment, the unevenness 10dp is provided on the first surface 10f of the base 10s. The first layer 15 is provided so as to contact the unevenness 10dp. The first conductive member 10C is provided so as to contact the first layer 15. In FIG. 1(a), the unevenness 10dp on the first surface 10f is omitted.

[0016] By providing the irregularities 10dp on the first surface 10f, the area where the base 10s and the first layer 15 contact each other becomes larger than when no irregularities are provided, making it easier to obtain high adhesion.

[0017] The first layer 15 includes Cr and Ti. The first layer 15 including Cr and Ti is provided between the base body 10s and the first conductive member 10C. The first layer 15 including Cr and Ti has high adhesion to the base body 10s. The first layer 15 including Cr and Ti has high adhesion to the first conductive member 10C. The first layer 15 functions, for example, as a base layer that improves adhesion.

[0018] In the embodiment, the first layer 15 containing Cr and Ti is provided, thereby making it possible to suppress peeling. According to the embodiment, it is possible to provide an electromagnetic wave attenuator capable of stably attenuating electromagnetic waves.

[0019] 1(a) and 1(b), a first direction D1 from the base 10s to the first conductive member 10C is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0020] 1B, the unevenness 10dp includes a recess 10fd and a protrusion 10fp. The height (or depth) of the unevenness 10dp is defined as a height 10H. The height 10H corresponds to the distance in the first direction D1 between the recess 10fd and the protrusion 10fp.

[0021] 1(a), the thickness of the first layer 15 is defined as a thickness t15. The thickness t15 corresponds to the length of the first layer 15 along the first direction D1.

[0022] In the embodiment, the height 10H of the irregularities 10dp is greater than the thickness t15 of the first layer 15. The first layer 15 is aligned along the first surface 10f including the irregularities 10dp. High adhesion is easily obtained by the thin first layer 15 aligned along the irregularities 10dp.

[0023] In one example, the height 10H of the irregularities 10dp is 1 μm or more and 100 μm or less. In one example, the thickness t15 of the first layer 15 is 1 nm or more and 30 nm or less. Such irregularities 10dp and the first layer 15 make it easy to obtain high adhesion.

[0024] 1(b), the substrate 10s includes, for example, a plurality of particles 17 and a resin 18. The resin 18 is provided around the plurality of particles 17. The plurality of particles 17 includes, for example, a first element including at least one selected from the group consisting of silicon and aluminum, and oxygen. In one example, the plurality of particles 17 includes silicon oxide (for example, SiO2). The resin 18 may include, for example, at least one selected from the group consisting of epoxy and polyimide.

[0025] By providing the plurality of particles 17, high mechanical stability can be obtained in the base body 10s, and high insulation properties and high stability can be obtained.

[0026] When the base 10s includes a plurality of particles 17, by providing the first layer 15 (underlayer) including Cr and Ti, particularly high adhesion is easily obtained.

[0027] When the substrate 10s includes a plurality of particles 17, the elements included in the first layer 15 Based on It is considered that the Cr contained in the first layer 15 easily diffuses into the substrate 10s. For example, the Cr contained in the first layer 15 easily diffuses into the substrate 10s. For example, the Cr easily bonds with a plurality of particles (e.g., silicon oxide particles) contained in the substrate 10s. This is considered to result in high adhesion.

[0028] For example, Cr contained in the first layer 15 diffuses into the plurality of particles 17 and is likely to bond with the plurality of particles 17. For example, Cr is present in a spread manner from the first layer 15 to the plurality of particles 17. This provides high adhesion. The concentration of Cr inside the plurality of particles 17 may be higher than the concentration of Cr in the resin 18.

[0029] In the embodiment, at least one diameter Dm1 (see FIG. 1(b)) of the plurality of particles 17 is, for example, 1 nm or more and 100 μm or less. The average diameter Dm1 of the plurality of particles 17 is, for example, 10 nm or more and 100 μm or less.

[0030] 1(a) and 1(b), the laminate member 10MA may include a second layer 16. The second layer 16 includes Cr and Ti. The second layer 16 includes, for example, an alloy including Cr and Ti. A first conductive member 10C is provided between the first layer 15 and the second layer 16.

[0031] The second layer 16 functions as, for example, a protective layer. The second layer 16 has high adhesion to the first conductive member 10C. The second layer 16 suppresses deterioration of the first conductive member 10C. By providing the second layer 16, a stable first conductive member 10C can be obtained.

[0032] The second layer 16 has a thickness t16 (see FIG. 1(a)). The thickness t16 may be, for example, not less than 1 nm and not more than 30 nm. The first conductive member 10C has a thickness t10C (see FIG. 1(a)). The thickness t10C is, for example, not less than 0.5 μm and not more than 100 μm.

[0033] FIG. 2 is a schematic cross-sectional view illustrating the electromagnetic wave attenuation body according to the first embodiment. As shown in Fig. 2, in an electromagnetic wave attenuator 10A according to the embodiment, a first conductive member 10C includes a first laminate 10M. Other configurations of the electromagnetic wave attenuator 10A may be similar to those of the electromagnetic wave attenuator 10. In Fig. 2, the irregularities 10dp of the first surface 10f are omitted.

[0034] The first stacked body 10M includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 11N. The plurality of first non-magnetic layers 11N include Cu. One of the plurality of first magnetic layers 11 is between one of the plurality of first non-magnetic layers 11N and another one of the plurality of first non-magnetic layers 11N. One of the plurality of first non-magnetic layers 11N is between one of the plurality of first magnetic layers 11 and another one of the plurality of first magnetic layers 11. For example, the first magnetic layers 11 and the first non-magnetic layers 11N are alternately provided. The direction from one of the plurality of first non-magnetic layers 11N to another one of the plurality of first non-magnetic layers 11N is along the first direction D1.

[0035] Such a first laminate 10M can more effectively attenuate electromagnetic waves, particularly those in a frequency range of 100 MHz or less.

[0036] One of the multiple first nonmagnetic layers 11N is in contact with one of the multiple first magnetic layers 11 and another of the multiple first magnetic layers 11.

[0037] The multiple first magnetic layers 11 include, for example, at least one selected from the group consisting of Fe, Ni, and Co. The multiple first magnetic layers 11 may further include at least one selected from the group consisting of Cu, Mo, and Cr. The multiple first magnetic layers 11 are, for example, soft magnetic layers. In one example, the multiple first magnetic layers 11 are, for example, NiFeCuMo layers. Good soft magnetic properties are obtained.

[0038] In the first stacked body 10M, the number of the multiple first magnetic layers 11 may be the same as the number of the multiple first non-magnetic layers 11N, or may be greater by 1 or less by 1. For example, the number of the multiple first magnetic layers 11 is, for example, 2 or more and 200 or less. The number of the multiple first non-magnetic layers 11N is, for example, 2 or more and 200 or less.

[0039] The thickness t11 of each of the first magnetic layers 11 is, for example, not less than 20 nm and not more than 1000 nm. The thickness t11N of each of the first non-magnetic layers 11N is, for example, not less than 20 nm and not more than 1000 nm. The thickness t10M of the first stack 10M is, for example, not less than 200 nm and not more than 100 μm.

[0040] FIG. 3 is a schematic cross-sectional view illustrating the electromagnetic wave attenuation body according to the first embodiment. As shown in Fig. 3, in an electromagnetic wave attenuator 10B according to the embodiment, a first conductive member 10C includes a second laminate 20M. The rest of the configuration of the electromagnetic wave attenuator 10B may be similar to that of the electromagnetic wave attenuator 10A. In Fig. 3, the irregularities 10dp of the first surface 10f are omitted.

[0041] The second stacked body 20M includes a plurality of second magnetic layers 12 and a plurality of second non-magnetic layers 12N. At least one of the plurality of second non-magnetic layers 12N includes at least one selected from the group consisting of Ta, Ti, W, Mo, Nb, and Hf. At least one of the plurality of second non-magnetic layers 12N may further include at least one selected from the group consisting of Cu, Al, Ni, Cr, Mn, Mo, Zr, and Si. For example, at least one of the plurality of second non-magnetic layers 12N includes Cr and Ti. For example, at least one of the plurality of second non-magnetic layers 12N includes Ta.

[0042] One of the plurality of second magnetic layers 12 is between one of the plurality of second non-magnetic layers 12N and another one of the plurality of second non-magnetic layers 12N. 2 and another one of the plurality of second magnetic layers 12. For example, the second magnetic layers 12 and the second non-magnetic layers 12N are provided alternately. The direction from one of the plurality of second non-magnetic layers 12N to another one of the plurality of second non-magnetic layers 12N is along the first direction D1.

[0043] Such a second laminate 20M can more effectively attenuate electromagnetic waves, for example, electromagnetic waves in a frequency range of 60 MHz or less.

[0044] One of the multiple second nonmagnetic layers 12N is in contact with one of the multiple second magnetic layers 12 and another of the multiple second magnetic layers 12.

[0045] The second magnetic layers 12 include, for example, at least one selected from the group consisting of Fe, Ni, and Co. The second magnetic layers 12 may further include at least one selected from the group consisting of Cu, Mo, and Cr. The second magnetic layers 12 are, for example, soft magnetic layers. In one example, the second magnetic layers 12 are, for example, NiFeCuMo layers. Good soft magnetic properties are obtained.

[0046] In the second stacked body 20M, the number of the multiple second magnetic layers 12 may be the same as the number of the multiple second non-magnetic layers 12N, or may be greater than or equal to 1, or may be smaller than or equal to 1. For example, the number of the multiple second magnetic layers 12 is, for example, 2 or more and 200 or less. The number of the multiple second non-magnetic layers 12N is, for example, 2 or more and 200 or less.

[0047] The thickness t12 of each of the second magnetic layers 12 is, for example, not less than 10 nm and not more than 500 nm. The thickness t12N of each of the second non-magnetic layers 12N is, for example, not less than 1 nm and not more than 100 nm. The thickness t20M of the second stack 20M is, for example, not less than 200 nm and not more than 100 μm.

[0048] 3, the first stack 10M is provided between the first layer 15 and the second stack 20M. In an embodiment, the second stack 20M may be provided between the first layer 15 and the first stack 10M.

[0049] In the embodiment, as described below, each of the multiple magnetic layers may have an uneven shape. In the following, a case where each of the multiple first magnetic layers 11 has an uneven shape will be described. The following description may also be applied to the multiple second magnetic layers 12. Each of the multiple second magnetic layers 12 may have an uneven shape.

[0050] FIG. 4 is a schematic cross-sectional view illustrating an electromagnetic wave attenuation body according to an embodiment. 4, each of the multiple first magnetic layers 11 has an uneven shape. The multiple first non-magnetic layers 11N are aligned along the uneven shapes of the multiple first magnetic layers 11.

[0051] One of the multiple first magnetic layers 11 includes a first magnetic layer surface 11fa. The first magnetic layer surface 11fa faces one of the multiple first non-magnetic layers 11N. The first magnetic layer surface 11fa includes a first top portion 11pp, a second top portion 11pq, and a first bottom portion 11dp. A direction that intersects with the first direction D1 is defined as an intersecting direction De2. The intersecting direction De2 is, for example, the X-axis direction.

[0052] The position of the first bottom 11dp in the cross direction De2 is between the position of the first top 11pp in the cross direction De2 and the position of the second top 11pq in the cross direction De2. At least a part of one of the multiple first nonmagnetic layers 11N is between the first top 11pp and the second top 11pq in the cross direction De2. The distance along the first direction D1 between the first top 11pp and the first bottom 11dp is, for example, 10 nm or more. The distance corresponds to the height (depth) of the unevenness.

[0053] It is believed that by providing such an uneven shape, for example, the magnetostatic interaction of magnetization between one of the multiple first magnetic layers 11 and another of the multiple first magnetic layers 11 can be made greater.

[0054] Second embodiment The second embodiment relates to an electronic device. The electronic device according to the embodiment includes the electromagnetic wave attenuator according to the first embodiment and an arbitrary electronic element. The electromagnetic wave attenuator according to the first embodiment is, for example, the electromagnetic wave attenuator 10, the electromagnetic wave attenuator 10A, or the electromagnetic wave attenuator 10B.

[0055] 5(a) to 5(d) are schematic views illustrating an electronic device according to the second embodiment. Fig. 5(a) is a perspective view. Fig. 5(b) is a cross-sectional view taken along line A1-A2 in Fig. 5(a). Fig. 5(c) is a cross-sectional view taken along line B1-B2 in Fig. 5(a). Fig. 5(d) is a plan view seen from the direction of arrow AA in Fig. 5(a). Figs. 1 to 3 correspond to the cross-section taken along line C1-C2 in Fig. 5(b).

[0056] As shown in Fig. 5(a), an electronic device 110 according to the embodiment includes an electronic element 50 and an electromagnetic wave attenuator (in this example, an electromagnetic wave attenuator 10). In this example, a substrate 60 is further provided. The electromagnetic wave attenuator 10 covers at least a portion of the electronic element 50. The electronic element 50 is, for example, a semiconductor element.

[0057] As shown in FIG. 5(b), in this example, the electronic element 50 includes a semiconductor chip 50c, an insulating portion 50i, and a wiring 50w. In this example, an electrode 50e, a substrate connection portion 50f, and a connection portion 58 are provided on a substrate 60. The wiring 50w electrically connects a part of the semiconductor chip 50c to the electrode 50e. The substrate connection portion 50f electrically connects the electrode 50e to the connection portion 58. The substrate connection portion 50f penetrates the substrate 60. The connection portion 58 functions as an input / output portion of the semiconductor chip 50c. The connection portion 58 may be, for example, a terminal. An insulating portion 50i is provided around the semiconductor chip 50c. The insulating portion 50i includes, for example, at least one of resin and ceramic. The insulating portion 50i protects the semiconductor chip 50c.

[0058] The electronic element 50 includes, for example, at least one of an arithmetic circuit, a control circuit, a memory circuit, a switching circuit, a signal processing circuit, and a high-frequency circuit.

[0059] The base 10s of the electromagnetic wave attenuator 10 (see FIG. 1) may be, for example, at least a part of the electronic element 50. The base 10s of the electromagnetic wave attenuator 10 may be, for example, at least a part of the insulating part 50i.

[0060] As illustrated in Fig. 5(b), in this example, the electromagnetic wave attenuator 10 is electrically connected to a terminal 50t provided on the substrate 60. The electromagnetic wave attenuator 10 is set to one potential (e.g., ground potential) via the terminal 50t. The electromagnetic wave attenuator 10 attenuates, for example, electromagnetic waves radiated from the electronic element 50. The electromagnetic wave attenuator 10 functions, for example, as a shield.

[0061] 5(a) to 5(c), the laminated member 10MA of the electromagnetic wave attenuating body 10 includes a first planar portion 10p and a first side surface portion 10a. In this example, the laminated member 10MA includes first to fourth side surface portions 10a to 10d. The direction from the electronic element 50 to the first planar portion 10p is along a first direction D1 (e.g., the Z-axis direction).

[0062] As shown in FIGS. 5(b) and 5(c), the electronic element 50 is located between the first planar portion 10p and the substrate 60 in the first direction D1.

[0063] As shown in FIGS. 5(c) and 5(d), the electronic element 50 is located between the first side surface portion 10a and the third side surface portion 10c in the X-axis direction.

[0064] As shown in FIGS. 5(b) and 5(d), the electronic element 50 is located between the second side surface portion 10b and the fourth side surface portion 10d in the Y-axis direction.

[0065] By using the electromagnetic wave attenuator 10A or 10B, it is possible to effectively attenuate electromagnetic waves in a low frequency range of, for example, 100 MHz or less, and to provide an electronic device capable of improving the attenuation characteristics of electromagnetic waves.

[0066] For example, it is possible to prevent electromagnetic waves generated in the electronic element 50 from being emitted to the outside. For example, it is possible to prevent electromagnetic waves from the outside from reaching the electronic element 50. It becomes easier to obtain stable operation of the electronic element 50.

[0067] The first planar portion 10p may, for example, be substantially quadrilateral (including a parallelogram, a rectangle, or a square).

[0068] 6(a) to 6(d) are schematic cross-sectional views illustrating a part of the electronic device according to the second embodiment. 6(a), the first side surface portion 10a of the electromagnetic wave attenuator 10 includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 11N. The stacking direction of the plurality of first magnetic layers 11 and the plurality of first non-magnetic layers 11N in the first side surface portion 10a is the second direction D2.

[0069] 6(b), the second side surface portion 10b of the electromagnetic wave attenuator 10 includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 11N. The stacking direction of the plurality of first magnetic layers 11 and the plurality of first non-magnetic layers 11N in the second side surface portion 10b is a third direction D3.

[0070] 6(c), the third side surface portion 10c of the electromagnetic wave attenuator 10 includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 11N. The stacking direction of the plurality of first magnetic layers 11 and the plurality of first non-magnetic layers 11N in the third side surface portion 10c is the second direction D2.

[0071] 6(d), the fourth side surface portion 10d of the electromagnetic wave attenuator 10 includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 11N. The stacking direction of the plurality of first magnetic layers 11 and the plurality of first non-magnetic layers 11N in the fourth side surface portion 10d is the third direction D3.

[0072] The first magnetic layer 11 included in each of the first to fourth side surface portions 10a to 10d may be continuous with the first magnetic layer 11 included in the first planar portion 10p. The first non-magnetic layer 11N included in each of the first to fourth side surface portions 10a to 10d may be continuous with the first non-magnetic layer 11N included in the first planar portion 10p.

[0073] Thus, the electronic device 110 according to the embodiment includes the electromagnetic wave attenuator 10 according to the first embodiment and the electronic element 50. For example, the direction from the electronic element 50 to the electromagnetic wave attenuator 10 is a first direction D1.

[0074] 7 to 12 are schematic cross-sectional views illustrating the electronic device according to the second embodiment. As shown in FIG. 7, an electronic device 111 according to the embodiment includes an electromagnetic wave attenuator 10 and a plurality of electronic elements (electronic elements 51, 51B, 52, 53, 53B, and 53C, etc.).

[0075] An electronic element is provided between a plurality of regions of the electromagnetic wave attenuator 10. An insulating region (insulating portions 41 and 42, etc.) may be provided between the electronic element and one of the plurality of regions of the electromagnetic wave attenuator 10. A resin portion (resin portions 51I, 52I, 53I, etc.) may be provided between the electronic element and the insulating region (insulating portions 41 and 42, etc.). A connection member (connecting members 51N, 52N, 53N, etc.) may be provided to each of the plurality of electronic elements. For example, the electronic element and the connection portion 58 may be electrically connected by the connection member.

[0076] 8, a connection member 51N may be embedded in a substrate 55. In the electronic device 112, an electromagnetic wave attenuator 10 is provided between a plurality of electronic elements. For example, an electromagnetic wave generated from one of the plurality of electronic elements is prevented from being incident on another of the plurality of electronic elements.

[0077] 9, a mounting member 220 may be provided. The mounting member 220 includes a substrate 55 and an electromagnetic wave attenuator 10. Electronic elements (electronic elements 51 and 51B) are provided between the mounting member 220 and another electromagnetic wave attenuator 10.

[0078] 10, an electromagnetic wave attenuation body 10 may be provided on a side surface of an electronic element 51. The side surface intersects with the XY plane.

[0079] As in an electronic device 115 shown in FIG. 11, the electromagnetic wave attenuator 10 may be provided so as to continuously surround a plurality of electronic elements (electronic elements 51 and 52).

[0080] 12, one of the plurality of electronic elements (electronic element 51) is provided between the plurality of regions of the electromagnetic wave attenuation body 10. Another of the plurality of electronic elements (electronic element 52) ​​does not have to be provided between the plurality of regions of the electromagnetic wave attenuation body 10.

[0081] Electronic devices 111 to 116 also provide electronic devices capable of improving the attenuation characteristics of electromagnetic waves.

[0082] The embodiments may be applied, for example, to electromagnetic wave attenuators for EMC (ElectroMagnetic Compatibility) and electronic devices.

[0083] The embodiment may include the following configurations (e.g., technical solutions).

[0084] (Configuration 1) A substrate including a first surface including projections and recesses; A first conductive member containing Cu; a first layer provided between the first surface and the first conductive member and including Cr and Ti; An electromagnetic wave attenuator comprising a laminated member including:

[0085] (Configuration 2) 2. The electromagnetic wave attenuation body according to claim 1, wherein the base includes a plurality of particles and a resin surrounding the plurality of particles.

[0086] (Configuration 3) 3. The electromagnetic wave attenuation body according to configuration 2, wherein the plurality of particles include a first element including at least one selected from the group consisting of silicon and aluminum, and oxygen.

[0087] (Configuration 4) 3. The electromagnetic wave attenuation body according to claim 2, wherein the plurality of particles include silicon oxide.

[0088] (Configuration 5) 5. The electromagnetic wave attenuator according to any one of configurations 2 to 4, wherein at least one of the plurality of particles has a diameter of 1 nm or more and 100 μm or less.

[0089] (Configuration 6) 6. The electromagnetic wave attenuator according to any one of configurations 2 to 5, wherein the resin includes at least one selected from the group consisting of epoxy and polyimide.

[0090] (Configuration 7) 7. The electromagnetic wave attenuator according to any one of configurations 1 to 6, wherein the height of the projections and recesses is greater than the thickness of the first layer.

[0091] (Configuration 8) 8. The electromagnetic wave attenuation body according to configuration 7, wherein the height is not less than 1 μm and not more than 100 μm.

[0092] (Configuration 9) 9. The electromagnetic wave attenuator according to any one of configurations 1 to 8, wherein the first layer has a thickness of 1 nm or more and 30 nm or less.

[0093] (Configuration 10) The laminate member further includes a second layer including Cr and Ti; 10. The electromagnetic wave attenuation body according to any one of configurations 1 to 9, wherein the first conductive member is between the first layer and the second layer.

[0094] (Configuration 11) 11. The electromagnetic wave attenuator according to configuration 10, wherein the second layer has a thickness of 1 nm or more and 30 nm or less.

[0095] (Configuration 12) the first conductive member includes a first laminate, the first stack includes a plurality of first magnetic layers and a plurality of first non-magnetic layers containing Cu; The electromagnetic wave attenuator according to any one of configurations 1 to 11, wherein one of the plurality of first magnetic layers is between one of the plurality of first non-magnetic layers and another of the plurality of first non-magnetic layers.

[0096] (Configuration 13) 13. The electromagnetic wave attenuation body of claim 12, wherein the one of the plurality of first non-magnetic layers is in contact with the one of the plurality of first magnetic layers and the other one of the plurality of first magnetic layers.

[0097] (Configuration 14) 14. The electromagnetic wave attenuator according to claim 12, wherein the first magnetic layers include at least one selected from the group consisting of Fe, Ni, and Co.

[0098] (Configuration 15) 15. The electromagnetic wave attenuator according to configuration 14, wherein the plurality of first magnetic layers further includes at least one selected from the group consisting of Cu, Mo, and Cr.

[0099] (Configuration 16) the one of the plurality of first magnetic layers includes a first magnetic layer surface facing the one of the plurality of first non-magnetic layers; the first magnetic layer surface includes a first top portion, a second top portion, and a first bottom portion; a position of the first bottom in a cross direction crossing a direction from the one of the plurality of first nonmagnetic layers to the other one of the plurality of first nonmagnetic layers is between a position of the first top in the cross direction and a position of the second top in the cross direction, 16. The electromagnetic wave attenuator according to any one of configurations 12 to 15, wherein at least a portion of the one of the plurality of first nonmagnetic layers is between the first apex and the second apex in the intersecting direction.

[0100] (Configuration 17) the first conductive member further includes a second laminate, the second stack includes a plurality of second magnetic layers and a plurality of second non-magnetic layers, one of the plurality of second magnetic layers is between one of the plurality of second non-magnetic layers and another one of the plurality of second non-magnetic layers; 17. The electromagnetic wave attenuator according to any one of configurations 12 to 16, wherein the plurality of second nonmagnetic layers include at least one selected from the group consisting of Ta, Ti, W, Mo, Nb, and Hf.

[0101] (Configuration 18) 18. The electromagnetic wave attenuator according to configuration 17, wherein at least one of the plurality of second nonmagnetic layers further includes at least one selected from the group consisting of Cu, Al, Ni, Cr, Mn, Mo, Zr, and Si.

[0102] (Configuration 19) The laminated member includes a first planar portion and a first side portion, In the first planar portion, a direction from the base to the first conductive member is along a first direction, In the first side portion, a direction from the base to the first conductive member is along a second direction, 19. The electromagnetic wave attenuator according to any one of configurations 1 to 18, wherein the second direction intersects with the first direction.

[0103] (Configuration 20) An electromagnetic wave attenuator according to any one of configurations 1 to 19, An electronic element; An electronic device comprising:

[0104] According to the embodiment, it is possible to provide an electromagnetic wave attenuator and an electronic device capable of stably attenuating electromagnetic waves.

[0105] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element, such as the laminate, magnetic layer, and non-magnetic layer, included in the electromagnetic wave attenuator are included in the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain the same effects by appropriately selecting them from the known range.

[0106] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0107] In addition, all electromagnetic wave attenuators and electronic devices that can be implemented by a person skilled in the art by making appropriate design modifications based on the electromagnetic wave attenuators and electronic devices described above as embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0108] In addition, within the scope of the concept of the present invention, a person skilled in the art may think of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0109] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0110] 10, 10A, 10B...electromagnetic wave attenuator, 10C...first conductive member, 10H...height, 10M...first laminate, 10MA...laminated member, 10a-10d...first to fourth side portions, 10dp...unevenness, 10f...first surface, 10fd...concave portion, 10dp...convex portion, 10p...first planar portion, 10s...base, 11...first magnetic layer, 11N...first non-magnetic layer, 11dp...first bottom portion, 11fa...first magnetic layer surface, 11pp...first top portion, 11pq...second top portion, 12...second magnetic layer, 12N...second non-magnetic layer, 15...first layer, 16...second layer, 17...particles, 18...resin, 20M...second laminate, 41, 42...insulating portion, 50...electronic element, 50c...semiconductor chip, 50e...electrode, 50f...substrate connection portion, 50i...insulating portion, 50t...terminal, 50w...wiring, 51, 51B, 52, 53, 53B, 53C...electronic element, 51I, 52I, 53I...resin portion, 51N, 52N, 53N...connecting member, 55...substrate, 58...connecting portion, 60...substrate, 110-116...electronic device, 220...mounting member, AA...arrow, D1-D3...first to third directions, De2...crossing direction, Dm1...diameter, t10C, t10M, t11, t11N, t12, t12N, t15, t16, t20M...thickness

Claims

1. A substrate including a first surface including projections and recesses; A first conductive member containing Cu; a first layer provided between the first surface and the first conductive member and including Cr and Ti; A laminate member including: The height of the projections and recesses is greater than the thickness of the first layer, The laminate member further includes a second layer including Cr and Ti; the first conductive member is between the first layer and the second layer; The substrate includes a plurality of particles and a resin surrounding the plurality of particles, The irregularities are formed along the plurality of particles, The thickness of the first conductive member is 0.5 μm or more and 100 μm or less, the first conductive member includes a first laminate, the first stack includes a plurality of first magnetic layers and a plurality of first non-magnetic layers including Cu; one of the plurality of first magnetic layers is between one of the plurality of first non-magnetic layers and another one of the plurality of first non-magnetic layers; the one of the plurality of first magnetic layers includes a first magnetic layer surface facing the one of the plurality of first non-magnetic layers; the first magnetic layer surface includes a first top portion, a second top portion, and a first bottom portion; a position of the first bottom in a cross direction crossing a direction from the one of the plurality of first nonmagnetic layers to the other one of the plurality of first nonmagnetic layers is between a position of the first top in the cross direction and a position of the second top in the cross direction, An electromagnetic wave attenuator, wherein at least a portion of the one of the plurality of first nonmagnetic layers is between the first apex and the second apex in the intersecting direction.

2. 2. The electromagnetic wave attenuation body according to claim 1, wherein the plurality of particles include a first element including at least one selected from the group consisting of silicon and aluminum, and oxygen.

3. The electromagnetic wave attenuation body according to claim 1 , wherein the plurality of particles includes silicon oxide.

4. the first conductive member further includes a second laminate, the second stack includes a plurality of second magnetic layers and a plurality of second non-magnetic layers, one of the plurality of second magnetic layers is between one of the plurality of second non-magnetic layers and another one of the plurality of second non-magnetic layers; 4. The electromagnetic wave attenuator according to claim 1, wherein the second non-magnetic layers include at least one selected from the group consisting of Ta, Ti, W, Mo, Nb and Hf.

5. An electromagnetic wave attenuator according to any one of claims 1 to 4, An electronic element; An electronic device comprising:

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