Long-wave infrared thermal sensor for integration into track systems.

Abstract

Disclosed herein are various embodiments of systems and methods for monitoring thermal characteristics of substrates, substrate processes, and / or substrate processing module components. More specifically, the present disclosure provides various embodiments of thermal imaging sensors within various substrate processing modules of a substrate processing system (e.g., a liquid distribution module, a bake module or combined bake module, an interface block, a wafer inspection system (WIS) module, a plating distribution module, or another processing module). By disposing thermal imaging sensors at various locations within the substrate processing system, the present disclosure enables thermal data to be remotely collected from the substrate surface, the liquid dispensed onto the substrate surface, the processing space surrounding the substrate, or components contained within the substrate processing module (e.g., a liquid distribution nozzle, a spin chuck, a spin coat cup, a cooling arm, a WIS component, a heating component, etc.).

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to and the benefit of the filing date of U.S. Provisional Patent Application No. 62 / 987,782, filed March 10, 2021, the entirety of which is incorporated herein by reference.

[0002] The present disclosure relates to the processing of substrates. In particular, the present disclosure provides various embodiments of systems and methods for monitoring thermal characteristics of substrates, substrate processing and / or substrate processing module components. In one embodiment, the systems and methods disclosed herein may be utilized when processing semiconductor substrates. [Background technology]

[0003] Conventional substrate processing systems utilize photolithography processes that include coating, exposing, developing and baking steps. The materials and processes utilized in these steps can all affect film thickness on the substrate, critical dimension targets, line roughness, uniformity, etc. As feature sizes in substrate processing continue to shrink, the technological challenges to forming structures on the substrate increase.

[0004] In a substrate processing system, there are many processes and steps that can benefit from real-time temperature monitoring of the substrate, the temperature of chemicals being dispensed onto the substrate (a wafer in one example) or the effects of chemical reactions occurring on the substrate. In conventional substrate processing systems, thermal monitoring has historically utilized contact probes, such as thermocouples. Unfortunately, contact-based thermal monitoring probes limit the range of thermal monitoring that can be used within a substrate processing system. Summary of the Invention [Problem to be solved by the invention]

[0005] Infrared thermography or thermal imaging is utilized in other fields (security, building construction / inspection, etc.) to remotely determine the temperature of an object by monitoring the infrared radiation emitted by the object. Thermal imaging sensors, typically covering the 8-15um wavelength range, can obtain completely passive thermal images of objects at temperatures only slightly above room temperature based solely on thermal radiation and without the need for illumination. It would therefore be desirable to incorporate thermal imaging sensors within substrate processing systems to provide remote thermal monitoring of substrates, substrate processing and substrate processing module components. [Means for solving the problem]

[0006] Various embodiments of systems and methods for monitoring thermal characteristics of substrates, substrate processing, and / or substrate processing module components are disclosed herein. More specifically, the present disclosure provides various embodiments of thermal image sensors in various substrate processing modules of a substrate processing system (e.g., liquid distribution module, bake module or combined bake module, interface block, wafer inspection system (WIS) module, plating distribution module, or another processing module). By placing thermal image sensors at various locations in the substrate processing system, the present disclosure allows thermal data to be collected remotely from the substrate surface, the liquid dispensed on the substrate surface, the processing space surrounding the substrate, or components contained within the substrate processing module (e.g., liquid distribution nozzle, spin chuck, spin coat cup, cooling arm, WIS component, heating component, etc.).

[0007] According to one embodiment, the systems provided herein generally include at least one process module for processing substrates, a thermal imaging sensor disposed within the at least one process module for acquiring thermal data from the substrate, a liquid dispensed on the substrate, or a component contained within the at least one process module, and a controller coupled to receive thermal data from the thermal imaging sensor and configured to process the thermal data for fault detection monitoring, process control, substrate evaluation, equipment evaluation, process evaluation, or life prediction.

[0008] In an alternative embodiment, a system may be further described in which at least one processing module is a liquid distribution module and a thermal imaging sensor is positioned at or near the ceiling of the liquid distribution module such that the field of view (FOV) of the thermal imaging sensor encompasses the substrate and / or one or more surrounding components.

[0009] In an alternative embodiment, a system may be further described in which at least one processing module is a liquid dispensing module and a thermal imaging sensor is mounted on a nozzle scan arm contained within the liquid dispensing module or on a side wall of the liquid dispensing module such that the field of view (FOV) of the thermal imaging sensor encompasses the nozzles and / or the liquid dispensed by the nozzles.

[0010] In another alternative embodiment, a system may be further described in which the at least one processing module is a bake module including a bake chamber, and the thermal imaging sensor is positioned at or near the ceiling of the bake module such that the field of view (FOV) of the thermal imaging sensor encompasses a cooling arm configured to retrieve the substrate from the bake chamber and transport the substrate to a cooling chamber.

[0011] In another alternative embodiment, a system may be further described, wherein at least one processing module is an interface block (IFB).

[0012] In another alternative embodiment, a system may be further described in which at least one processing module is a wafer inspection (WIS) module including a camera system for acquiring images of the substrate during inspection processing, and a thermal imaging sensor is positioned on a ceiling or sidewall of the WIS module such that the field of view (FOV) of the thermal imaging sensor encompasses the camera system and / or the substrate.

[0013] In another alternative embodiment, a system may be further described in which at least one processing module includes a thermal grid that is planar to the top surface of the substrate, and a thermal image sensor is positioned on the ceiling of the at least one processing module and centered above the substrate.

[0014] In another alternative embodiment, a system may be further described in which at least one processing module includes a plating distribution module including a plating chemical distribution assembly and a heater, and a thermal imaging sensor is positioned within the plating distribution module such that a field of view (FOV) of the thermal imaging sensor encompasses the plating chemical distribution assembly, the heater and / or the substrate.

[0015] A more detailed understanding of the present invention and its advantages can be obtained by reference to the following description in conjunction with the accompanying drawings, in which like reference numerals indicate like features, and in which it should be noted, however, that the accompanying drawings depict only exemplary embodiments of the disclosed concepts and therefore should not be considered as limiting the scope of application, as the disclosed concepts may be applied to other equally effective embodiments. [Brief description of the drawings]

[0016] [Figure 1] A side view of a liquid distribution module that includes a thermal imaging sensor to monitor the temperature of a substrate placed within the liquid distribution module, a processing step or chemical reaction occurring within the liquid distribution module, or components contained within the liquid distribution module. [Diagram 2] FIG. 1 is a side view of a liquid dispensing module in which a thermal imaging sensor is mounted on the dispense arm assembly to monitor the temperature of the dispense arm assembly or the liquid dispensed by the dispense arm assembly. [Diagram 3] FIG. 13 is a side view of a composite bake module in which a thermal imaging sensor is included to monitor the temperature of a cooling arm used to transport substrates from the bake chamber to the cool down chamber. [Figure 4]13 is a graph showing heat retained in a cooling arm when transferring a substrate from a bake chamber to a cooling chamber. [Diagram 5] FIG. 1 is a block diagram of an interface block (IFB) and a lithography tool that includes a thermal imaging sensor to monitor the temperature of the IFB or a substrate disposed within the IFB. [Figure 6] FIG. 1 is a side view of a wafer inspection system (WIS) that includes a thermal imaging sensor to monitor the temperature of one or more WIS components. [Figure 7] FIG. 1 is a side view of a substrate processing module with a thermal imaging sensor coupled to the ceiling of the module. [Figure 8A] 8 is a front perspective view of the substrate processing system shown in FIG. 7 illustrating how a thermal image sensor may be positioned to obtain a two-dimensional (2D) thermal grid image of the substrate surface. [Figure 8B] FIG. 1 is a top view of a 2D thermal grid image of a substantially flat substrate surface. [Figure 8C] FIG. 1 is a top view of a 2D thermal grid image of a non-flat substrate surface. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] Various embodiments of systems and methods for monitoring thermal characteristics of substrates, substrate processing and / or substrate processing module components are disclosed herein. More specifically, the present disclosure provides various embodiments of thermal image sensors in various substrate processing modules of a substrate processing system (e.g., liquid distribution module, bake module or combined bake module, interface block, WIS module, plating distribution module or another processing module). By placing thermal image sensors at various locations in the substrate processing system, the present disclosure allows thermal data to be collected remotely from the substrate surface, the liquid dispensed on the substrate surface, the processing space surrounding the substrate or components contained within the substrate processing module (e.g., liquid distribution nozzle, spin chuck, spin coat cup, cooling arm, WIS component, heating component, etc.).

[0018] Unlike conventional substrate processing systems that use contact-based temperature (such as thermocouples), the present disclosure provides thermal imaging sensors in various substrate processing modules of the substrate processing system (e.g., liquid distribution module, bake module or combined bake module, interface block, WIS module, plating distribution module, or another processing module). By placing thermal imaging sensors at various locations in the substrate processing system, the present disclosure allows thermal data to be collected remotely from the substrate surface, the liquid dispensed on the substrate surface, the processing space surrounding the substrate, or members contained within the substrate processing module (e.g., liquid distribution nozzle, spin chuck, spin coat cup, cooling arm, WIS member, heating member, etc.).

[0019] The substrate, in one exemplary embodiment, is a semiconductor wafer and is generally formed to include a base layer of silicon. Silicon is highly transparent to wavelengths associated with long wave infrared (LWIR). In addition, dispensed liquids and / or additive layers introduced in various substrate processing modules have absorptive and emissive properties at wavelengths associated with LWIR. As a result, LWIR sensors (or cameras) can be used for thermal monitoring of processes performed on substrates (or wafers) and product wafers.

[0020] In some implementations, a thermal imaging sensor suitable for use in the substrate processing modules disclosed herein may include an LWIR sensor having a spectral range of about 8-14 μm. One example of a suitable LWIR sensor is an LWIR micro thermal camera module provided by FLIR Systems, Inc., known as Lepton. The FLIR Lepton module is an LWIR camera that provides non-contact temperature data at every pixel of a 2D thermal image. Given the small form factor (approximately 10×12×7 mm), the LWIR camera can be easily integrated into a variety of substrate processing modules. However, it should be noted that the thermal imaging sensors disclosed herein are not limited to LWIR cameras and may be alternatively implemented in other embodiments.

[0021] The thermal data collected by the thermal imaging sensor may be provided to various controllers for controlling one or more components contained within the substrate processing module and / or one or more substrate processing steps performed within the substrate processing module. For example, the thermal data may be provided to various controllers used for fault detection monitoring, feedback and / or feedforward process control, component life monitoring and / or calibration.

[0022] It will be appreciated that the thermal monitoring techniques described herein may be utilized in a variety of substrate processing modules and / or systems. Examples of substrate processing modules in which the thermal monitoring techniques described herein may be implemented are shown in Figures 1-3 and 5-7. However, it will be appreciated that the concepts may be utilized in other substrate processing modules.

[0023] In some embodiments (see Figs. 1-2), a thermal imaging sensor can be incorporated into a liquid distribution module (e.g., coating module, developing module, backside scrubber module, etc.) to monitor the temperature of the substrate surface, the liquid applied to the substrate surface, or components included in the liquid distribution module (e.g., liquid distribution nozzle, spin chuck, spin coat cup, etc.). In other embodiments (see Fig. 3), a thermal imaging sensor can be incorporated into a bake module (or combined bake module) to monitor the temperature of components included therein (e.g., cooling arm used to transport substrates from bake chamber to cool chamber, etc.). In yet other embodiments (see Fig. 5), a thermal imaging sensor can be provided in an interface block (IFB) or interface section used to transport substrates between substrate processing modules. In a further embodiment (see Fig. 6), a thermal imaging sensor can be provided in a wafer inspection system (WIS) module to monitor the temperature of one or more WIS module components (e.g., lamps, cameras, or other components, etc.). In yet another embodiment, a thermal imaging sensor can be incorporated into the plating distribution module to monitor the temperature of the dispensed plating chemicals, the substrate temperature changes induced by the dispensed plating chemicals, the in-situ heater or the substrate temperature changes induced by the in-situ heater. In one embodiment, the plating distribution module can be an electroless plating module.

[0024] It will be appreciated that the substrate processing modules shown and described herein are merely exemplary embodiments of modules to which the thermal monitoring techniques described herein may be applied. Thus, the thermal monitoring techniques disclosed herein may be applied to other embodiments of liquid distribution modules, bake modules, interface blocks, WIS modules, plating distribution modules (e.g., electroless modules) and / or other types of substrate processing modules. It should be noted that the substrate processing modules shown and described herein may be standalone units or may be integrated into a larger substrate processing system. For example, one or more of the substrate processing modules shown and described herein may be integrated into a larger substrate processing system that includes modules for coating, exposing, developing, baking, plating, inspection, etc.

[0025] First embodiment - Thermal imaging sensor integrated within a liquid distribution module 1 illustrates an exemplary liquid dispensing module 10 (e.g., a coating module, a developing module, a spin-coating module, etc.) in which liquid is applied to a substrate for processing purposes. It will be appreciated that the liquid dispensing module 10 illustrated in FIG. 1 is only one example of a substrate processing module to which the thermal monitoring techniques described herein may be applied. Thus, the techniques disclosed herein may be applied to other liquid dispensing modules and / or other processing units.

[0026] Substrates are coated with various processing fluids in a liquid distribution module 10. As shown in FIG. 1, the liquid distribution module 10 includes a processing chamber defined by a chamber wall 12. A spin chuck 14 disposed inside the chamber wall 12 provides support for a substrate, which in some embodiments may be a semiconductor wafer (W). More specifically, the spin chuck 14 has a horizontal upper surface on which the substrate is supported during processing. Suction ports (not shown) may be provided on the horizontal upper surface of the spin chuck 14 to secure the substrate to the spin chuck by suction. The spin chuck 14 and the substrate supported by the spin chuck 14 may be rotated at variable angular velocities by a drive mechanism 16, which may be a stepper motor or the like. The drive mechanism 16 may operate at various angular velocities to apply liquid materials and to flow the liquid materials onto the substrate.

[0027] The nozzle 18 is adapted to dispense one or more liquids onto the substrate at a specified rate to apply one or more layers or films onto the upper surface of the substrate. Exemplary layers or films that may be applied to the substrate surface include, but are not limited to, a topcoat (TC) barrier layer, a topcoat antireflective (TARC) layer, a bottom antireflective (BARC) layer, an imaging layer (e.g., photoresist), and a sacrificial and barrier layer (hard mask) for etch stop. The nozzle 18 is coupled to a liquid supply unit (not shown) via a liquid supply line 20. In some embodiments, the nozzle 18 may be attached to the tip of a nozzle scan arm 22 through a nozzle holder. The nozzle scan arm 22 may be attached to the top end of a vertical support member 26 that is horizontally movable in one direction (e.g., the Y direction) on a guide rail 28. Although not shown in FIG. 1, a drive mechanism (not shown) may be coupled to the nozzle scan arm 22, the vertical support member 26, or the guide rail 28 to move the nozzle 18 in the Y direction. Other mechanisms (again not shown) may be used to move the nozzle 18 in the Z direction and / or the X direction.

[0028] The cup (CP) is provided to capture and collect most of the liquid material expelled from the substrate by the centrifugal forces generated during rotation by the spin chuck 14. The spin chuck 14 supports and rotates (i.e. spins) the substrate about its central normal axis relative to the stationary cup. The liquid material expelled from the substrate and collected by the cup is exhausted via exhaust line 15 and an exhaust unit (not shown). In some embodiments, an exhaust line 17 and an exhaust unit (not shown), such as a vacuum pump or other negative pressure generating device, may also be used to remove gaseous species (including, but not limited to, vapors expelled from the substrate layer during processing) from the processing space inside the cup.

[0029] The spin chuck 14 and the drive mechanism 16 are disposed within the opening of the cup (CP). As shown in FIG. 1, the substrate may be delivered to the spin chuck 14 by a processing arm 11, which may be used to move the substrate into and out of the liquid distribution module 10. In some embodiments, a lifting mechanism, such as an air cylinder and an up-down guide unit, may be used to lift the drive mechanism 16 and / or the spin chuck 14 upward to receive the substrate delivered by the processing arm 11. Alternatively, the cup (CP) may be configured to move up and down, or to separate and expand to allow the substrate to be disposed on the spin chuck 14.

[0030] 1, a thermal imaging sensor 30 is incorporated into the liquid dispensing module 10 to monitor the temperature of the substrate, the liquid dispensed on the substrate, or components contained within the liquid dispensing module (e.g., spin chuck 14, cup (CP), nozzle 18, etc.). In some embodiments, the thermal imaging sensor 30 may be coupled to the ceiling of the liquid dispensing module 10 or near the ceiling on a sidewall of the liquid dispensing module 10 (as shown in FIG. 1) such that the field of view (FOV) of the thermal imaging sensor 30 encompasses the substrate and / or surrounding components (e.g., spin chuck 14, cup (CP), nozzle 18, etc.).

[0031] As shown in FIG. 1, the thermal data collected by the thermal image sensor 30 is provided to a controller 32 for further processing. It will be appreciated that a variety of different controllers may be used to implement the controller 32 depending on the application. In some applications, the controller 32 processes the thermal data collected by the thermal image sensor 30 and may use the processed data for fault detection monitoring. In other embodiments, the controller 32 may use the processed data as input variables for feedback and / or feedforward process control. In still other embodiments, the processed data generated by the controller 32 may be used to monitor or predict the life of a process module component. Depending on the application, the embodiment shown in FIG. 1 may be applied to a coating module, a developing module, a backside scrubber module, and / or any combination thereof.

[0032] In a first application of the embodiment shown in Figure 1, a thermal imaging sensor 30 can be used in a coating module to monitor the evaporative cooling effect of a solvent applied to a substrate (e.g., a wafer) as a means to determine the coating endpoint and / or ensure a consistent coating evaporation history. As the solvent evaporates (e.g., from a resist film applied to the wafer), the heat required to induce evaporation creates an evaporative cooling effect on the wafer (and film). By positioning the thermal imaging sensor 30 so that the sensor's FOV encompasses the wafer surface, the evaporative cooling effect provided by solvent evaporation from the coated wafer can be monitored.

[0033] In a first application of the embodiment shown in FIG. 1, the thermal image sensor 30 collects thermal data from the wafer surface, and the controller 32 processes the thermal data to monitor the evaporative cooling effect of solvent evaporation from the wafer surface. In some cases, the controller 32 can process the thermal data to detect evaporative cooling differences between wafers, which can be flagged by fault detection controls. In other cases, the controller 32 can process the thermal data to detect evaporative cooling differences between modules, which can be used to adjust or optimize process parameters (e.g., airflow, exhaust, chemical temperature, etc.) for matching / repeatable between modules. In yet another case, the controller 32 can process the thermal data to detect a metric associated with the end of the evaporative cooling thermal history (e.g., the wafer temperature starts trending back toward the ambient temperature of the module). This metric can be used as a process endpoint metric and can be used by another (e.g., a film thickness controller) as a way to proceed to the next step of the process recipe consistently from wafer to wafer. As discussed above, the thermal data is associated with the wafer surface. However, bare silicon has a high transmittance of LWIR light. Thus, depending on the particular wafer (wafer thickness, amount, types and thicknesses of layers formed on the wafer, etc.), the light emission may also be associated with materials below the wafer surface (e.g., backside chemical temperatures and / or temperature changes of the vacuum chuck due to spinning dynamics).

[0034] In a second application of the embodiment shown in FIG. 1, the thermal imaging sensor 30 can be used in a coating or developing module to monitor the temperature of the dispensed liquid on the wafer (e.g., resist consumption, edge bead removal, resist, developing, etc. solution reduction) and / or the temperature change of the wafer induced by the dispensed liquid. Some dispensed liquids are thermally controlled and thermally monitored in conventional processing systems, where it is not always clear how the wafer will be affected by the thermal mass of the dispensed liquid on the wafer surface, regardless of temperature control. Furthermore, because not all liquid is dispensed at the center of the wafer, it is difficult to predict the local temperature effect of the dispensed liquid on the wafer surface, regardless of the amount dispensed. However, by positioning the thermal imaging sensor 30 such that the sensor FOV encompasses the wafer surface, the temperature effect of the dispensed liquid across the wafer can be monitored for defect detection purposes and / or within wafer-to-wafer and wafer processing control.

[0035] In a second application of the embodiment shown in FIG. 1, thermal image sensor 30 collects thermal data from the wafer surface and controller 32 processes the thermal data to monitor the temperature of the dispensed liquid on the wafer or the temperature change induced on the wafer by the dispensed liquid. Optionally, controller 32 can process the thermal data to determine an average temperature of the dispensed liquid or an average wafer temperature change induced by the dispensed liquid. Optionally, a film thickness (FT) average controller (for coating processes) or a critical dimension (CD) average controller (for development processes) can use the average temperature of the dispensed liquid or the average wafer temperature change induced by the dispensed liquid as an input variable for feedback or feedforward process control.

[0036] In other cases, the controller 32 can process the thermal data to determine the dispensed liquid across-wafer temperature difference or dispensed liquid induced across-wafer temperature difference. In some cases, the FT uniformity controller (for coat processes) or CD uniformity controller (for develop processes) can use the dispensed liquid across-wafer temperature difference or dispensed liquid induced across-wafer temperature difference as an input variable for feedback or feedforward process control. For example, the input variables can be used to modify multiple potential control knobs to mitigate the effects of dispensed liquid temperature across-wafer difference or dispensed liquid induced across-wafer temperature difference.

[0037] In other cases, the thermal data processed by the controller 32 can be used for fault detection monitoring, including but not limited to early diagnosis of thermal controller drift / failure (especially during development processing) and detection of poor / incomplete puddle formation. For example, incomplete puddle formation may manifest as a discernible temperature difference between areas of the substrate with puddle coverage (temperature of the puddle) versus areas without puddle coverage (temperature of the underlying substrate).

[0038] In a third application of the embodiment shown in FIG. 1, the thermal imaging sensor 30 can be used in a coating or developing module to monitor the temperature of the spin chuck 14 (and / or drive mechanism 16). Although the drive mechanism 16 is thermally controlled and thermally monitored in conventional processing systems, the nature of the connection between the spin motor contained within the drive mechanism 16 and the spin chuck 14 results in a delay in the thermal control and monitoring of the spin chuck 14. In mass production, this thermal control delay typically means that there is a thermal difference in spin chuck temperature throughout lot processing, especially when starting from a long idle state. However, by positioning the thermal imaging sensor 30 such that the sensor's FOV encompasses the spin chuck 14, the temperature of the spin chuck 14 (and / or drive mechanism 16) can be monitored for fault detection monitoring and / or process control.

[0039] In a third application of the embodiment shown in FIG. 1, the thermal image sensor 30 collects thermal data from the spin chuck 14 (e.g., immediately prior to wafer delivery) and the controller 32 processes the thermal data to monitor the temperature of the spin chuck 14. In some cases, the controller 32 can be a FT mean / uniformity controller (for coating processes) or a CD mean / uniformity controller (for developing processes) that uses the spin chuck temperature as an input variable for feedback or feedforward process control. For example, because the spin chuck 14 is smaller than the wafer, differences in contact area with the heat sink often induce thermal differences across the wafer. By feeding the spin chuck temperature to a FT or CD uniformity controller, the temperature differences across the wafer can be mitigated.

[0040] In other cases, the spin chuck temperature provided to the controller 32 can be used for fault detection monitoring. Fault detection monitoring can include, but is not limited to, early diagnosis of spin motor failure, detection of liquid on the spin chuck 14, or identification of a worn or damaged spin chuck 14. For example, an impending spin motor failure can be predicted by detecting an increased thermal trend in the spin chuck temperature (which may occur, for example, if spin motor friction increases due to bearing or grease problems). In addition, liquid on the spin chuck 14 (and / or subassembly regions) can be detected by observing the temperature difference on the spin chuck 14 relative to the rest of the assembly (e.g., due to the evaporative cooling effect of liquid). Finally, a worn or damaged spin chuck can be identified by monitoring the temperature of the spin chuck region of the wafer during wafer processing and analyzing the spin chuck thermal pattern induced across the wafer.

[0041] In a fourth application of the embodiment shown in Figure 1, the thermal imaging sensor 30 can be used in a coating module to monitor the temperature of the cup (CP). The cup temperature (CP) is not typically monitored or controlled, but has been found to affect edge coat uniformity for some films. By positioning the thermal imaging sensor 30 so that the sensor's FOV encompasses the cup (CP), the cup temperature can be monitored for fault detection monitoring and / or process control.

[0042] In a fourth application of the embodiment shown in FIG. 1, the thermal image sensor 30 collects thermal data from the cup (e.g., immediately prior to wafer delivery) and the controller 32 processes the thermal data to monitor the temperature of the cup (CP). In some cases, the controller 32 can be a FT uniformity controller that uses the cup temperature as an input variable for feedback or feedforward process control. For example, the cup temperature can be used by the FT uniformity controller to change a number of potential control knobs to mitigate the effects of cup temperature differences. In other cases, the cup temperature provided to the controller 32 can be used for fault detection monitoring. Fault detection monitoring includes, but is not limited to, identifying chemical drop issues (e.g., if chemicals are dropped onto the cup during arm movement), identifying differences in cup types, and identifying accumulation of chemical residues in the cup.

[0043] In a fifth application of the embodiment shown in FIG. 1, the thermal imaging sensor 30 can be used in the developer module to monitor the temperature of the developer paddle to understand the thermal profile of the developer paddle process over time by location. The temperature of the developer paddle is affected by many factors, including but not limited to, the chuck temperature, the temperature of the chemicals, the temperature of the incoming wafer, and the temperature of the air. Since the development rate is also highly dependent on temperature, the ability to monitor the thermal profile of the developer paddle process over time (and cumulatively) by location can be used to optimize or control the development process. By positioning the thermal imaging sensor 30 such that the FOV of the sensor encompasses the wafer surface, the temperature of the developer paddle can be monitored for feedback and / or feedforward process control.

[0044] In a fifth application of the embodiment shown in FIG. 1, the thermal image sensor 30 collects thermal data from the wafer surface during the developer puddle process, and the controller 32 processes the thermal data to monitor the temperature of the developer puddle. In some cases, the controller 32 can process the thermal data to determine an average accumulated temperature of the developer puddle, which can be used for feedback and / or feedforward process control. For example, the average accumulated temperature of the developer puddle can be fed back to another controller to modify one or more process parameters (e.g., developer time, temperature, or dispense conditions) used during puddle formation. In one example of feedforward control, the average accumulated temperature of the developer puddle can be used to dispense additional thermally controlled developer solution in localized regions of the wafer to improve the thermal uniformity of the puddle. In another example of feedforward control, a localized thermal heating method (e.g., absorption-based heating method) can be used to make the accumulated temperature across the wafer (puddle) more uniform.

[0045] In a sixth application of the embodiment shown in FIG. 1, the thermal imaging sensor 30 can be used in various liquid dispensing modules to monitor the temperature of endothermic or exothermic chemical reactions on the wafer and understand the thermal profile of a single wafer's endothermic or exothermic chemical reactions over time, location by location (e.g., for cleaning). The dynamic temperature of the wafer / chemical is affected by many things, including but not limited to the chemical dispensing method and process, the local concentration of reactive chemicals, chuck temperature, chemical temperature, the incoming wafer temperature, and air temperature. Since chemical reaction rates are also highly temperature dependent, the ability to monitor the thermal profile of a single wafer's endothermic or exothermic chemical reactions over time (and cumulative) can be used to optimize or control chemical processing. By placing the thermal imaging sensor 30 such that the sensor's FOV encompasses the wafer surface, the wafer / chemical reaction temperature can be monitored for feedback and / or feedforward process control.

[0046] In a sixth application of the embodiment shown in FIG. 1, the thermal image sensor 30 collects thermal data from the wafer surface during wafer processing, and the controller 32 processes the thermal data to monitor the temperature of a chemical reaction occurring on the wafer. In some cases, the controller 32 can process the thermal data to determine a local or average accumulated temperature of the wafer, which can be used for feedback and / or feedforward process control. For example, the local or average accumulated temperature of the wafer can be fed back to another controller to modify one or more process parameters (e.g., chemical reaction process time, temperature, concentration, or mixture ratio) used during wafer processing. In one example of feedforward control, the local or average accumulated temperature of the wafer can be used to distribute additional reactive chemicals in a localized region of the wafer to increase chemical reactivity in the localized region. In another example of feedforward control, a localized thermal heating method (e.g., an absorption-based heating method) can be used to make the accumulated temperature across the wafer more uniform.

[0047] In a seventh application of the embodiment shown in Figure 1, the thermal imaging sensor 30 can be used in a backside scrubber module to monitor the temperature of the wafer to understand the wafer conditions associated with the backside scrubber process and / or to understand the condition of the backside scrubber brushes. The backside scrubber brushes locally heat the wafer due to friction induced by brushing. By positioning the thermal imaging sensor 30 so that the FOV of the sensor encompasses the wafer surface, the localized heating induced on the wafer by the backside scrubber process can be monitored.

[0048] In a seventh application of the embodiment shown in FIG. 1, the thermal image sensor 30 collects thermal data from the wafer surface during backside scrubbing, and the controller 32 processes the thermal data to monitor the temperature of the wafer during backside scrubbing. Optionally, the controller 32 can use the wafer temperature monitored during backside scrubbing as a metric of the degree of defect mitigation. For example, as defects are removed, friction induced by brushing is reduced, reducing localized heating associated with such friction. Optionally, the controller 32 can monitor the average heating induced between wafers as a metric of brush life. As the brush wears, frictional heating is reduced, which should be observable in the wafer-to-wafer signal. By monitoring the average heating induced between wafers, the controller 32 can predict the life of the backside scrubber brush.

[0049] 1, thermal imaging sensor 30 is positioned at or near the ceiling of liquid distribution module 10 to monitor the temperature of a substrate disposed within the liquid distribution module, a processing step or chemical reaction occurring within the liquid distribution module, or a component contained within the liquid distribution module. However, it will be recognized that thermal imaging sensor 30 is not strictly limited to the location shown in FIG. 1 or the temperature monitoring and control techniques described above.

[0050] 2 illustrates another embodiment of a liquid dispensing module 10 (e.g., a coating module, a developing module, a spin-coating module, etc.) to which the thermal monitoring techniques described herein may be applied. In some embodiments, the thermal imaging sensor 30 may be mounted on the nozzle scan arm 22 (as shown in FIG. 2) or coupled to a sidewall of the liquid dispensing module 10 such that the field of view (FOV) of the thermal imaging sensor 30 encompasses the nozzle 18 and / or the liquid dispensed by the nozzle 18. This allows the thermal imaging sensor 30 and controller 32 to monitor the temperature of the nozzle 18 or the liquid dispensed by the nozzle.

[0051] 2 allows the point-of-use (POU) temperature of the dispensed liquid (i.e., the temperature of the liquid at the nozzle 18 as the liquid is dispensed onto the wafer) and the condition of the dispense nozzle (e.g., suckback height) to be readily determined. In some cases, the POU temperature monitored by the thermal image sensor 30 and controller 32 can be provided as an input variable for feedback or feedforward process control to an FT average or uniformity controller (for coating processes) or a CD average or uniformity controller (for developing processes). In other cases, the condition of the dispense nozzle (e.g., suckback height) can be readily determined via the thermal monitoring provided by the thermal image sensor 30 and controller 32, since the position of the liquid in the nozzle 18 will be seen as a thermal differential relative to the air below the liquid position.

[0052] Second embodiment - Thermal imaging sensor integrated in the baking module Figure 3 illustrates an exemplary combined bake module 40 that may be configured to perform both bake and chill processes. It will be appreciated that the combined bake module 40 illustrated in Figure 3 is only one example of a substrate processing module to which the thermal monitoring and control techniques described herein may be applied. Thus, the techniques disclosed herein may be applied to other bake modules and / or other processing modules.

[0053] The composite bake module 40 shown in FIG. 3 includes a bake chamber 42 and a cooling chamber 50 disposed within and bounded by one or more exterior walls 48. The bake chamber 42 shown in FIG. 3 includes a bake plate 44 and a bake chamber lid 46 that forms part of the bake chamber 42. One or more heaters (not shown) can be embedded within the bake plate 44 to generate heat that can be used to thermally process (or bake) a substrate mounted on an upper surface of the bake plate 44. Additionally, one or more temperature sensors (not shown) can be embedded within the bake plate 44 to measure the temperature of the bake plate 44. In some embodiments, the bake plate 44 can include a number of through holes into which lift pins (not shown) can be inserted and used to lift a substrate (e.g., a wafer W) or lower a substrate onto the upper surface of the bake plate 44.

[0054] A number of different bake processes (e.g., post-exposure bake, post-develop bake, post-apply bake, post-electrostatic exposure bake, etc.) can be performed in the bake chamber 42 of the combined bake module 40 to thermally treat (or bake) one or more layers or films previously applied or deposited on a substrate (e.g., wafer W). Typical layers or films include, but are not limited to, topcoat (TC) barrier layers, topcoat antireflective (TARC) layers, bottom antireflective (BARC) layers, imaging layers (e.g., photoresist), as well as sacrificial and barrier layers (hardmasks) for etch stops. After the substrate is thermally treated, a cooling arm 52 can retrieve the substrate from the top surface of the bake plate 44 and transport the substrate to the cooling chamber 50 to perform a cooling process.

[0055] 3 includes a cooling arm 52 configured to pick up a substrate from an upper surface of the bake plate 44 and transfer the substrate to the cooling chamber 50. In some embodiments, the cooling arm 52 may be coupled to a linear guide 54, which allows the cooling arm to move in a linear direction (e.g., X direction) for picking up and transferring the substrate. The cooling chamber 50 and / or the cooling arm 52 may perform a cooling process on a substrate that has been heat treated or baked in the bake chamber 42.

[0056] Cooling can be accomplished in a variety of different ways. In some embodiments, the cooling arm 52 can include a cooling mechanism (not shown) to reduce the temperature of the wafer. For example, the cooling arm 52 can have process cooling water flowing through it to remove heat from the wafer. In other embodiments, cooling can be achieved via active temperature controlled (Peltier) cooling plates. These cooling plates can be provided as separate units.

[0057] Due to throughput constraints of the substrate processing system, only a limited time may be allowed for the cooling process, so there is often heat retention in the cooling arm 52 from the previous wafer cooling process (especially when operating at full volume production), which affects the thermal history of the next wafer processed in the composite bake module 40 (see, e.g., FIG. 4).

[0058] To overcome this problem, a thermal imaging sensor 30 is incorporated into the composite baking module 40 to monitor the temperature of the cooling arm 52. In some embodiments, the thermal imaging sensor 30 can be coupled near the ceiling of the composite baking module 40 or on a sidewall of the composite baking module 40 (e.g., as shown in FIG. 3 ) such that the field of view (FOV) of the thermal imaging sensor 30 encompasses the cooling arm 52.

[0059] Although the thermal imaging sensor 30 is disposed within the cooling chamber 50, it will be appreciated that the sensor may be disposed elsewhere within the composite bake module, so long as the sensor FOV encompasses the cooling arm 52. For example, the thermal imaging sensor 30 may be disposed within the bake chamber 42 instead of the cooling chamber 50. As shown in FIG. 3, instead of the composite bake module 40, the thermal imaging sensor 30 may be incorporated within a bake module that includes a bake chamber but does not include a cooling chamber. In such an embodiment, the thermal imaging sensor may be disposed at or near the ceiling of the bake module, such that the sensor FOV encompasses an arm (which may be a conventional arm or alternatively a cooling arm) configured to acquire the substrate from the bake chamber.

[0060] In a second embodiment shown in FIG. 3, the thermal image sensor 30 collects thermal data from the cooling arm 52 before, during or after wafer transfer, and the controller 32 processes the thermal data to monitor the temperature of the cooling arm 52. In some cases, the controller 32 can utilize the cooling arm temperature for feed-forward or feedback process control. For example, having accurate knowledge of the cooling arm temperature and / or wafer temperature at a comparable instant in the wafer processing history of the composite bake module 40 (e.g., when the cooling arm begins its transition to bake processing), can allow the controller 32 to adjust the bake profile (e.g., ramp rate, steady state temperature or steady state time) to ensure that subsequently processed wafers see a comparable total accumulated thermal history, regardless of the temperature of the cooling arm 52 at the start of that wafer's cool-down process.

[0061] Third embodiment - Thermal image sensor integrated in the interface block (IFB) 5 illustrates an exemplary interface block (IFB) 60 that may be used to transport substrates to other processing modules, such as, for example, a lithography tool 70. It will be appreciated that the interface block 60 illustrated in FIG. 5 is only one example of a substrate processing module to which the thermal monitoring and control techniques described herein may be applied. Thus, the techniques disclosed herein may be applied to other interface blocks and / or other processing modules. The interface block (IFB) 60 may include an interface cooling plate 62 as illustrated in FIG. 5.

[0062] In a third embodiment shown in Figure 5, a thermal image sensor 30 can be used in an interface block (IFB) 60 to monitor the temperature of the IFB 60 or a substrate (e.g., wafer, W) placed within the IFB. Typically, the temperature of the IFB is not monitored or controlled, but has been found to affect lithography tool overlay control. By placing the thermal image sensor 30 within the IFB 60, the temperature of the IFB 60 or a substrate placed within the IFB can be monitored for feedback and / or feedforward process control.

[0063] In a third embodiment shown in FIG. 5, the thermal image sensor 30 collects thermal data from the IFB or a substrate placed in the IFB before the substrate is transferred to the lithography tool 70, and the controller 32 processes the thermal data to monitor the temperature of the IFB 60 or the substrate. In some cases, the controller 32 can utilize the IFB temperature for feedback process control. For example, the controller 32 can provide the IFB temperature to the cooling plate controller 64 before the substrate is transferred to the lithography tool 70 to adjust the temperature of the cooling plate 62 or the cooling time associated with the current cooling process. Such feedback process control can be used to account for thermal differences in the IFB temperature over time.

[0064] In other cases, controller 32 can utilize the substrate temperature for feed-forward process control. For example, controller 32 can provide the substrate temperature to lithography tool overlay controller 72 at the moment of IFB / lithography tool exchange. Such feed-forward process control can enable lithography tool 70 to account for and / or correct for the actual substrate temperature, thus accounting for unexpected delays in the IFB / lithography tool exchange that negate the repeatability of thermal induced by the last cooling process.

[0065] Fourth embodiment - Thermal imaging sensor integrated in a wafer inspection system (WIS) FIG. 6 illustrates an exemplary wafer inspection system (WIS) module 80 that may be configured to perform an inspection process on a substrate (or wafer). In some embodiments, the WIS module 80 may be integrated within a substrate processing system to inspect the substrate as it is processed within the substrate processing system. In other embodiments, the WIS module 80 may be a stand-alone module located outside of the substrate processing system. It will be appreciated that the WIS module 80 illustrated in FIG. 6 is only one example of a substrate processing module to which the thermal monitoring and control techniques described herein may be applied. Thus, the techniques disclosed herein may be applied to other inspection modules and / or other processing modules.

[0066] Wafer inspection system (WIS) modules are often used to inspect substrates (such as semiconductor wafers) during or after one or more processing steps (e.g., coating, baking, developing, etc.) are being performed in a substrate processing system. For example, a WIS module can determine the film thickness (FT) of a layer applied to a surface of a wafer after the wafer has been baked to harden or solidify the layer. In another example, a WIS module can determine the critical dimension (CD) of a structure formed on a wafer after the wafer has been developed to form the structure.

[0067] As shown in FIG. 6, the WIS module 80 is bounded by an exterior wall 82 and includes a support structure 84 for supporting a substrate (e.g., a wafer, W) while the substrate is placed in the WIS module for inspection. A camera system 86 is disposed within the WIS module 80 to acquire images of the substrate. In some embodiments, as shown in FIG. 6, the camera system 86 may be coupled to an interior surface of the exterior wall 82 and centered above the substrate such that the field of view (FOV) of the camera system 86 captures the entire top surface of the substrate. However, it will be appreciated that the camera location shown in FIG. 6 is merely an example, and that in other embodiments, the camera system 86 may instead be located within the WIS module 80. Additionally, mirrors or other optics may be utilized to direct images to a camera system that may be located elsewhere in the WIS module. For example, a mirror may be placed at the camera location of FIG. 6 to direct images onto a camera that is positioned in a plane parallel to the plane of the substrate of FIG. 6.

[0068] The camera system 86 may generally include a light source (or lamp) and a light receiving sensor (or camera). However, it should be noted that a variety of camera systems may be utilized, including, but not limited to, a charge-coupled device (CCD) image sensor camera, a complementary metal oxide semiconductor (CMOS) image sensor camera, an N-type metal oxide semiconductor (NMOS) image sensor camera, an indium gallium arsenide (InGaAs) image sensor camera, an indium antimony (InSb) image sensor camera, and the like.

[0069] The light sources included within the camera system 86 may typically be light sources having a visible spectrum or may be longer wavelength light sources. For example, visible spectrum, near infrared (NIR), short wave infrared (SWIR), and mid wave infrared (MIR) light sources represent exemplary light sources that may be used within the camera system 86 to illuminate the surface of the substrate.

[0070] A light receiving sensor (e.g., CCD, CMOS, NMOS, etc.) of the camera system 86 detects light reflected from the surface of the substrate and converts the detected light into a line scan or matrix of raw red, green, blue (RGB) values. The RGB values ​​output from the camera system 86 are provided to a WIS controller 88 for further processing. In some embodiments, the WIS controller 88 can apply a common model to the RGB values ​​to convert the detected color differences on the substrate into film thickness (FT) or critical dimension (CD) values.

[0071] In some cases, the RGB values ​​provided by the camera system 86 to the WIS controller 88 may depend on or be affected by, among other things, the temperature of one or more components (e.g., light source, light receiving sensor) of the camera system 86. Due to this temperature dependency, colors or color differences detected by the camera system 86 on the substrate may be erroneously interpreted as FT or CD values ​​or differences.

[0072] To overcome this problem, a thermal imaging sensor 30 is included within the WIS module 80 to monitor the temperature of the members of the camera system 86 and / or the temperature of a substrate placed within the WIS module 80. The temperature within the WIS module is not typically monitored or controlled, but has been found to affect the color or color difference detected by the camera system 86 on the substrate.

[0073] In some embodiments, the thermal imaging sensor 30 may be coupled to a ceiling or an interior sidewall of the WIS module 80 (e.g., as shown in FIG. 3 ) such that the field of view (FOV) of the thermal imaging sensor 30 encompasses the camera system 86. In some embodiments, the thermal imaging sensor 30 may additionally or alternatively be positioned such that the sensor FOV encompasses the substrate. By positioning the thermal imaging sensor 30 within the WIS module 80 such that the sensor FOV encompasses the camera system 86 and / or the substrate, the temperature of the components of the camera system 86 and / or the substrate can be monitored and used for WIS calibration purposes.

[0074] In a fourth embodiment shown in FIG. 6, the thermal image sensor 30 collects thermal data from a member of the camera system 86 or a substrate disposed in the WIS module 80 during an inspection process, and the controller 32 processes the thermal data to monitor the temperature of the member of the camera system 86 and / or the temperature of the substrate. In some embodiments, the controller 32 can provide the temperature of the member of the camera system 86 and / or the temperature of the substrate directly to the WIS controller 88. In other embodiments, the controller 32 can process the thermal data to determine correction values ​​(e.g., lamp temperature correction values, camera temperature correction values, substrate temperature correction values, etc.) that can be provided to the WIS controller 88. The WIS controller 88 can adjust the RGB values ​​provided by the camera system 86 using the temperature or correction values ​​provided by the controller 32. In doing so, the WIS controller 88 can calibrate the FT / CD values ​​generated by the WIS controller 88 to account for variations in the member of the camera system 86 or substrate temperature.

[0075] Fifth embodiment - Thermal imaging sensor integrated within a substrate processing module Figure 7 illustrates a generic substrate processing module 90 that may be configured to perform a process (such as a coating process, a developing process, a baking process, an exposure process, a chill process, a plating process, a deposition process, an etching process, or any of a variety of substrate processes). It will be appreciated that the generic substrate processing module 90 illustrated in Figure 7 is but one example of a substrate processing module to which the thermal monitoring techniques described herein may be applied.

[0076] 7 is bounded by an exterior wall 92 and includes a support structure 94 for supporting a substrate (e.g., a wafer, W) that is disposed within the processing module. Depending on the process being performed within the substrate processing module 90, the support structure 94 may be a spin chuck, a heat plate, a cooling plate, an etching chuck, a deposition chuck, etc.

[0077] In a fifth embodiment shown in Figure 7, the thermal image sensor 30 is incorporated into a substrate processing module 90 and is coupled to the ceiling of the module such that the thermal image sensor 30 is parallel to the plane of the substrate (or wafer, W) and centered above the center of the substrate. Thermal radiation reflects from most surfaces. By positioning the thermal image sensor 30 as shown in Figure 7, the thermal image sensor 30 can observe the thermal radiation reflected from the surface of the substrate to detect height variations in the substrate surface.

[0078] 8A-C are conceptual diagrams that can be used to explain how the thermal image sensor 30 shown in FIG. 7 can be used to detect height variations on a substrate surface. For example, as shown in FIG. 8A, a thermal grid 96 can be created in the same plane as the thermal image sensor 30 or in a plane parallel to the thermal image sensor such that the thermal grid is parallel to the plane of the top surface of the substrate. The temperature of the thermal grid 96 can be any temperature different from the ambient temperature within the substrate processing module 90. Thermal radiation generated by the thermal grid 96 is reflected from the surface of the substrate (W) and collected by the thermal image sensor 30 as a thermal reflective grid 98.

[0079] By creating a thermal grid 96 that is planar relative to the top surface of the substrate (whose temperature is distinguishable from the ambient temperature), the thermal image sensor 30 and controller 32 can observe the nature of the deformation of this grid when the substrate surface is not flat. Figure 8B shows an exemplary thermal reflective grid 98 that may be observed from a flat substrate surface. Figure 8C shows an exemplary thermal reflective grid 98 that represents how the thermal grid 96 may be deformed in a reflective grid image when the substrate surface is not flat. The rough wafer shape may be extracted based on the deformation of the thermal grid 96 observed by the thermal image sensor 30.

[0080] Sixth embodiment - Thermal imaging sensor integrated in plating distribution module In a sixth embodiment, the thermal imaging sensor 30 can be incorporated into a plating distribution module to monitor significantly elevated temperatures (e.g., about 55° C.) of the dispensed plating chemicals, the substrate temperature in response to the dispensed plating chemicals, the temperature of the in-situ heater and / or the substrate temperature changes induced by the in-situ heater. In one technique, the plating distribution module is an electroless plating module. By positioning the thermal imaging sensor 30 such that the sensor FOV encompasses the plating chemical distribution assembly, the in-situ heater and / or the substrate, the thermal data collected by the thermal imaging sensor 30 can be used for fault detection monitoring and process control.

[0081] In a sixth embodiment, the thermal imaging sensor 30 collects thermal data from the plating chemical distribution assembly, the in-situ heater and / or the substrate, and the controller 32 processes the thermal data to monitor the temperature of the dispensed plating chemicals, the substrate temperature change induced by the dispensed plating chemicals, the temperature of the in-situ heater or the substrate temperature change induced by the in-situ heater. In some embodiments, given the nature of the electroless plating module, for wafer temperature monitoring during in-situ heater processing, the thermal imaging sensor 30 can collect thermal data from underneath the substrate.

[0082] In some cases, the temperature of the dispensed plating chemicals, the temperature of the dispensed plating chemicals induced substrate temperature change, the temperature of the in-situ heater or the in-situ heater induced substrate temperature change detected by the thermal image sensor 30 may be provided to the controller 32 and used as input variables for fault detection monitoring and / or process control. For example, the controller 32 may be a plating process controller related to average plating volume. When implemented as a plating process controller, the controller 32 may use the temperature of the dispensed plating chemicals, the temperature of the in-situ heater or the in-situ heater induced substrate temperature change as input variables in a feedback or feedforward control process.

[0083] In some cases, controller 32 may be a across-wafer plating uniformity controller. When implemented as an across-wafer plating uniformity controller, controller 32 may use the temperature of the dispensed plating chemistry, the dispensed plating chemistry induced substrate temperature change, the in-situ heater temperature or the in-situ heater induced substrate temperature change as input variables in a feedback or feedforward control to modify multiple potential control knobs to mitigate the effects of across-wafer differences.

[0084] In other cases, the thermal data processed by the controller 32 can be used for fault detection monitoring, including but not limited to early diagnosis of thermal controller drift / failure and poor / incomplete paddle formation. For example, incomplete paddle formation may manifest as a discernible temperature difference between areas of the substrate with plating paddle coverage versus areas without paddle coverage (the temperature of the underlying substrate).

[0085] It is noted that the controller described herein can be implemented in a variety of ways. In one example, the controller 32 shown in FIGS. 1-3 and 5-7 can be a computer. In another embodiment, the controller 32 can include one or more programmable integrated circuits programmed to provide the functionality described herein. For example, one or more processors (e.g., microprocessors, microcontrollers, central processing units, etc.), programmable logic devices (e.g., complex programmable logic devices (CPLDs), field programmable gate arrays (FPGAs), etc.) and / or other programmable integrated circuits can be programmed with software or other programming instructions to implement the functionality described herein for the controller 32. It is further noted that the software or other programming instructions can be stored in one or more non-transitory computer-readable media (e.g., memory storage devices, flash memory, dynamic random access memory (DRAM), reprogrammable storage devices, hard drives, floppy disks, DVDs, CD-ROMs, etc.) and that the software or other programming instructions, when executed by the programmable integrated circuit, cause the programmable integrated circuit to perform the processes, functions and / or capabilities described herein. Other variations may also be implemented.

[0086] It will be appreciated that embodiments of the methods disclosed herein may be utilized before, during, or after a wide range of substrates are processed in a processing module, such as a liquid distribution module, bake module (or combined bake module), WIS module, IFB, plating distribution module, or another processing module. The substrate may be any substrate for which patterning of the substrate is desired. For example, in one embodiment, the substrate may be a semiconductor substrate having one or more semiconductor processing layers formed thereon (all of which together may constitute the substrate). Thus, in one embodiment, the substrate may be a semiconductor substrate that has been subjected to multiple semiconductor processing steps resulting in various structures and layers, all of which are known in the substrate processing art and which may be considered part of the substrate. For example, in one embodiment, the substrate may be a semiconductor wafer having one or more semiconductor processing layers formed thereon.

[0087] Further modifications and alternative embodiments of the present invention will become apparent to those skilled in the art in view of the description herein. Therefore, the description herein should be interpreted as illustrative only and for the purpose of teaching those skilled in the art how to practice the present invention. It should be understood that the forms and methods of the present invention shown and described herein should be interpreted as presently preferred embodiments. Equivalent techniques may be used in place of those illustrated and described herein, and certain features of the present invention may be utilized independently of the use of other features, all of which will become apparent to those skilled in the art after having the benefit of the description herein of the present invention.

Claims

1. 1. A system comprising: at least one processing module for processing a substrate; a thermal image sensor disposed within the at least one processing module to acquire thermal data from the substrate, a liquid dispensed on the substrate, or a component contained within the at least one processing module; a controller coupled to receive the thermal data from the thermal imaging sensor, the controller configured to process the thermal data for fault detection monitoring, process control, board evaluation, equipment evaluation, process evaluation, or life prediction; having the at least one treatment module is a liquid distribution module; the thermal imaging sensor is positioned at or near the ceiling of the liquid distribution module such that a field of view (FOV) of the thermal imaging sensor encompasses the substrate and / or one or more surrounding members; the thermal imaging sensor obtains the thermal data from a spin chuck contained within the liquid dispensing module; the controller processes the thermal data to monitor a temperature of the spin chuck; the controller uses the temperature of the spin chuck as an input variable for feedback or feedforward process control; The system wherein the controller uses the temperature of the spin chuck to predict impending spin motor failure, or to detect liquid on the spin chuck, or to identify a worn or damaged spin chuck.

2. A system comprising: at least one processing module for processing a substrate; a thermal image sensor disposed within the at least one processing module to acquire thermal data from the substrate, a liquid dispensed on the substrate, or a component contained within the at least one processing module; a controller coupled to receive the thermal data from the thermal imaging sensor, the controller configured to process the thermal data for fault detection monitoring, process control, board evaluation, equipment evaluation, process evaluation, or life prediction; having the at least one treatment module is a liquid distribution module; the thermal imaging sensor is positioned at or near the ceiling of the liquid distribution module such that a field of view (FOV) of the thermal imaging sensor encompasses the substrate and / or one or more surrounding members; the thermal imaging sensor acquiring the thermal data from a cup contained within the liquid dispensing module; the controller processes the thermal data to monitor the temperature of the cup; the controller using the temperature of the cup as an input variable for feedback or feedforward process control; The system, wherein the controller uses the temperature of the cup to detect chemical drop problems, or differences in cup type, or accumulation of chemical residue in the cup.

3. A system comprising: at least one processing module for processing a substrate; a thermal image sensor disposed within the at least one processing module to acquire thermal data from the substrate, a liquid dispensed on the substrate, or a component contained within the at least one processing module; a controller coupled to receive the thermal data from the thermal imaging sensor, the controller configured to process the thermal data for fault detection monitoring, process control, board evaluation, equipment evaluation, process evaluation, or life prediction; having the at least one treatment module is a liquid distribution module; the thermal imaging sensor is positioned at or near the ceiling of the liquid distribution module such that a field of view (FOV) of the thermal imaging sensor encompasses the substrate and / or one or more surrounding members; the thermal image sensor collecting the thermal data from a surface of the substrate during a develop puddle process; The controller processes the thermal data to monitor a temperature of a developer puddle dispensed over the surface of the substrate.

4. A system comprising: at least one processing module for processing a substrate; a thermal image sensor disposed within the at least one processing module to acquire thermal data from the substrate, a liquid dispensed on the substrate, or a component contained within the at least one processing module; a controller coupled to receive the thermal data from the thermal imaging sensor, the controller configured to process the thermal data for fault detection monitoring, process control, board evaluation, equipment evaluation, process evaluation, or life prediction; having the at least one treatment module is a liquid distribution module; the thermal imaging sensor is positioned at or near the ceiling of the liquid distribution module such that a field of view (FOV) of the thermal imaging sensor encompasses the substrate and / or one or more surrounding members; the thermal imaging sensor collects the thermal data from a front surface of the substrate during a backside scrubber (BST) process; The controller processes the thermal data to monitor the temperature of the substrate during the backside scrubbing process.

5. 4. The system of claim 3, wherein the controller processes the thermal data to determine an average accumulated temperature of the developer puddle for use in feedback and / or feedforward process control.

6. The system of claim 4 , wherein the controller uses the temperature of the substrate as a metric of an extent of defect mitigation.

7. 5. The system of claim 4, wherein the controller uses the temperature of the substrate to monitor an average wafer-to-wafer induced temperature and uses the average wafer-to-wafer induced temperature as a metric for backside scrubber brush life.

Images