Antenna structure and plasma generation device using same

By adopting an antenna structure composed of multi-antenna segments and capacitive components, an AC power supply generates an induction electric field and a magnetic field to induce plasma, solving the problems of stability and durability of traditional plasma generators, and achieving efficient and safe large-area plasma generation and maintenance.

JP7676424B2Active Publication Date: 2025-05-14EN2CORE TECH INC
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Patent Information

Application Number
JP2022549548
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-02-19
Filing Date
2021-02-19
Publication Date
2025-05-14
Estimated Expiration
2041-02-19

AI Technical Summary

Technical Problem

Under the influence of factors such as pressure, gas type, power supply, flow current and voltage, traditional inductively coupled plasma generators have problems such as poor stability and poor equipment durability, especially in large equipment.

Method used

An antenna structure consisting of multiple antenna segments and capacitive elements is adopted to generate an induced electric and magnetic field by applying an AC power supply, thereby inducing plasma. The antenna structure distributes voltage through capacitance elements to ensure that the voltage is evenly distributed under high frequency drive or high input current, reduces heat accumulation, and is cooled through the built-in cooling water flow channel.

Benefits of technology

It effectively reduces the voltage peak in the antenna structure, extends the plasma maintenance time, reduces energy loss, improves the generation and maintenance capabilities of large-area plasma, enhances the durability and safety of the equipment, and avoids equipment damage caused by heat accumulation.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The present invention relates to an antenna structure for applying an AC power source to induce plasma in a chamber, the antenna structure comprising: first and second antenna segments arranged on a first plane intersecting an imaginary central axis so as to have a first radius of curvature and a second radius of curvature based on the central axis; and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends a second length corresponding to the first length from the other end of the first capacitive load, and the sum of the first length and the second length is shorter than the circumference of a circle whose radius is the first radius of curvature or the second radius of curvature.
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Description

[Technical field]

[0001] The present invention relates to an antenna structure and a plasma generation device using the same, and more specifically, to a device that uses an antenna structure including a plurality of antenna segments and a plurality of capacitive elements to generate an induced electric field and an induced magnetic field to induce the generation of plasma. [Background technology]

[0002] Plasma-based technologies are used in a variety of industrial fields, including not only the technological fields of semiconductors, displays, and medical equipment, but also environmental technology fields such as air, water, and soil purification, and energy technology fields such as solar cells and hydrogen energy.

[0003] There are a wide variety of methods for generating such plasma, including direct current discharges such as corona discharge, glow discharge, and arc discharge, alternating current discharges such as capacitively coupled discharge and inductively coupled discharge, shock waves, and high-energy beams. Among these, the inductively coupled method, which is highly versatile due to its simple structure, is attracting attention.

[0004] Meanwhile, conventional inductively coupled plasma generators have problems such as unstable plasma control and impaired durability of the device due to factors such as internal / external pressure, type and properties of supplied gas, power applied to the device, current / voltage flowing through components, power consumption, etc. Furthermore, these problems become more serious as the volume and area of ​​the plasma generator become larger, and a solution to these problems is being sought. Summary of the Invention [Problem to be solved by the invention]

[0005] One problem to be solved by the present invention is to provide an antenna structure consisting of a plurality of segments and a capacitive element, and a plasma generation device using the same.

[0006] One problem to be solved by the present invention is to provide an antenna structure having a large volume or a large area for generating plasma over a wide area, and a plasma generation device using the same.

[0007] One problem that the present invention aims to solve is to provide an antenna structure having a voltage distribution structure in order to safely generate plasma at a high voltage formed in an inductor due to a high driving frequency or a large input current, and a plasma generation device using the same.

[0008] One problem to be solved by the present invention is to provide a plasma generating device that prevents the plasma generating device from being damaged by heat generated by induction of plasma.

[0009] One problem to be solved by the present invention is to provide a plasma generating device that effectively absorbs heat generated as plasma is induced by using cooling water.

[0010] The problems to be solved by the present invention are not limited to those mentioned above, and problems not mentioned will be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the accompanying drawings. [Means for solving the problem]

[0011] According to one aspect of the present specification, an antenna structure for applying an AC power source to induce plasma in a chamber can be provided, comprising first and second antenna segments arranged on a first plane intersecting a virtual central axis so as to have a first radius of curvature and a second radius of curvature with respect to the central axis, and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends a second length corresponding to the first length from the other end of the first capacitive load, and the sum of the first length and the second length is shorter than a circumference of a circle having a radius equal to the first radius of curvature or the second radius of curvature.

[0012] According to yet another aspect of the present specification, a plasma generation device for applying an AC power source to induce plasma in a chamber can be provided, comprising a first antenna structure arranged to have a first radius of curvature based on a virtual central axis, the first antenna structure including a plurality of first antenna segments having the first radius of curvature and at least one first capacitive load arranged between the plurality of first antenna segments so that the plurality of first antenna segments are electrically connected in series, the plurality of first antenna segments at least partially overlapping with a virtual first plane perpendicular to the central axis, each of the plurality of first antenna segments having a first length, and the sum of the lengths of the plurality of first antenna segments being shorter than a circumference whose radius is the first radius of curvature.

[0013] According to yet another aspect of the present specification, an antenna structure that is disposed outside a plasma generation unit and provides an induced electric field to induce plasma inside the plasma generation unit includes a first antenna that is formed along an outer wall surface of the plasma generation unit and induces an electric field, and a first cooling water flow path for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generation unit and is in surface contact with the plasma generation unit via the first inner diameter surface, the first antenna includes a first surface that defines contact with the first cooling water flow path and is parallel to the outer wall of the plasma generation unit and the first inner diameter surface, and the antenna structure can provide an antenna structure that absorbs heat from the plasma generation unit via the inner diameter surface and the first surface to prevent the temperature of the plasma generation unit from increasing due to the plasma.

[0014] The means for solving the problem of the present invention are not limited to the above-mentioned means, and the means for solving the problem of the present invention that are not mentioned will be clearly understood by a person having ordinary skill in the art to which the present invention belongs from this specification and the accompanying drawings. Effect of the Invention

[0015] According to the present invention, the plasma generating device can reduce the maximum voltage applied to the antenna by the capacitive element in the antenna structure when driven.

[0016] According to the present invention, in the plasma generating device, a high electromotive force is induced by the antenna structure when the device is driven, and the plasma can be maintained for a longer period of time.

[0017] According to the present invention, the plasma generator can reduce the voltage applied to the antenna structure when driven, thereby reducing the energy loss generated by the plasma.

[0018] According to the present invention, large area plasma induction can be used to perform large area displays or multiple semiconductor processes.

[0019] According to the present invention, it is possible to reduce the power consumption generated in the antenna structure in the plasma generating device.

[0020] According to the present invention, the potential difference between antennas in the antenna structure is reduced, making it possible to generate high density plasma more safely.

[0021] According to the present invention, even if the antenna structure is driven by a high-output high-frequency power source, damage to the chamber or the dielectric tube caused by the drive can be prevented.

[0022] According to the present invention, even if heat is generated by plasma, the effective heat absorption function of the antenna structure can prevent thermal damage to the plasma generating device.

[0023] The present invention allows the antenna structure to reduce the effects of parasitic capacitance while still performing an effective cooling function.

[0024] According to the present invention, arcing in a plasma generating device can be prevented while the antenna structure performs an effective cooling function.

[0025] The effects of the present invention are not limited to the effects described above. Effects not mentioned will be clearly understood by those having ordinary skill in the art to which the present invention pertains from the present specification and the accompanying drawings. [Brief description of the drawings]

[0026] [Figure 1] FIG. 1 is a diagram of a plasma system according to one embodiment of the present disclosure. [Diagram 2] FIG. 1 is a diagram of an implementation of a plasma system according to an embodiment of the present disclosure. [Diagram 3] FIG. 2 illustrates a plasma generating unit according to one embodiment of the present specification. [Figure 4] FIG. 2 is a diagram of an RF power source according to one embodiment of the present disclosure. [Figure 5-6]1A and 1B are diagrams relating to a method of arranging antenna segments according to one embodiment of the present disclosure. [Figure 7-10] FIG. 2 is a diagram of an antenna structure including an antenna segment and a capacitive element according to one embodiment of the present disclosure. [Figure 11] FIG. 2 is a diagram of an equivalent circuit of an antenna structure according to an embodiment of the present specification. [Figure 12] FIG. 11 is a graph showing voltage as a function of position within an antenna structure in accordance with an embodiment of the present disclosure. [Figure 13] FIG. 11 is a graph showing voltage as a function of position within an antenna structure including a capacitive element according to an embodiment of the present disclosure. [Figure 14] 1 is a diagram of an antenna structure having a square cross section according to one embodiment of the present disclosure. [Figure 15] 1 is a cross-sectional view of an antenna structure according to one embodiment of the present disclosure. [Figure 16] 1A-1C are diagrams of antenna structures having square and circular cross sections according to an embodiment of the present disclosure. [Figure 17-18] 1A and 1B are diagrams showing cross sections of an antenna structure having at least two different cross-sectional shapes according to an embodiment of the present specification. [Figure 19-22] 11A-11C are diagrams illustrating a method of connecting antennas having different cross sections within an antenna structure according to an embodiment of the present disclosure. [Diagram 23] FIG. 2 illustrates a heat transfer member according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] According to one aspect of the present specification, an antenna structure for applying an AC power source to induce plasma in a chamber can be provided, comprising first and second antenna segments arranged on a first plane intersecting a virtual central axis so as to have a first radius of curvature and a second radius of curvature with respect to the central axis, and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends a second length corresponding to the first length from the other end of the first capacitive load, and the sum of the first length and the second length is shorter than a circumference of a circle having a radius equal to the first radius of curvature or the second radius of curvature.

[0028] The above-mentioned objects, features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. However, the present invention can be modified in various ways and can have various embodiments, and the following will illustrate specific embodiments in the drawings and describe them in detail.

[0029] The examples described in this specification are intended to clearly explain the spirit of the present invention to those having ordinary skill in the art to which the present invention pertains, and the present invention is not limited to the examples described in this specification. The scope of the present invention should be interpreted as including amendments or modifications that do not depart from the spirit of the present invention.

[0030] The drawings attached to this specification are intended to easily explain the present invention, and the shapes shown in the drawings may be exaggerated as necessary to facilitate understanding of the present invention, and therefore the present invention is not limited by the drawings.

[0031] If it is determined that a detailed description of a known function or configuration related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, numbers (e.g., 1, 2, etc.) used in the description of this specification are merely identification symbols for distinguishing a certain component from other components.

[0032] In addition, the suffixes "unit," "module," and "section" used in the following description for components are given or used interchangeably solely for the ease of drafting the specification, and do not in themselves have any distinct meanings or roles.

[0033] According to one aspect of the present specification, an antenna structure for applying an AC power source to induce plasma in a chamber can be provided, comprising first and second antenna segments arranged on a first plane intersecting a virtual central axis so as to have a first radius of curvature and a second radius of curvature with respect to the central axis, and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends a second length corresponding to the first length from the other end of the first capacitive load, and the sum of the first length and the second length is shorter than a circumference of a circle having a radius equal to the first radius of curvature or the second radius of curvature.

[0034] Here, the first and second radii of curvature may be equal to each other, the first and second lengths may be equal to each other, and the first antenna segment and the second antenna segment may have the same inductance.

[0035] Also, here, the antenna structure may include a third antenna segment arranged on the first plane to have a third radius of curvature larger than the first radius of curvature, a fourth antenna segment arranged on the first plane to have a fourth radius of curvature larger than the second radius of curvature, and a second capacitive load electrically connecting the third and fourth antenna segments in series, wherein the third antenna segment extends from one end of the second capacitive load by a third length longer than the first length, and the fourth antenna segment extends from the other end of the second capacitive load by a fourth length longer than the second length.

[0036] Also, here, a line passing through the first and second capacitive loads may pass through the central axis.

[0037] In addition, a central angle of a sector formed by the first antenna segment as an arc may be equal to a central angle of a sector formed by the third antenna segment as an arc.

[0038] Here, the antenna structure may also include an inter-turn capacitive load electrically connecting the second antenna segment and the third antenna segment in series.

[0039] Also, here, the first and second capacitive loads and the inter-turn capacitive load may have the same capacitance.

[0040] Here, the antenna structure may include a fifth antenna segment having the first radius of curvature based on the central axis, a sixth antenna segment having the second radius of curvature, and a third capacitive load disposed between the fifth and sixth antenna segments and electrically connecting the fifth and sixth antenna segments in series, wherein the fifth antenna segment and the sixth antenna segment are disposed on a second plane intersecting the central axis, and the first plane and the second plane may be different planes from each other.

[0041] The antenna device may further include a first interlayer capacitive load that electrically connects the second antenna segment and the fifth antenna segment in series.

[0042] In addition, here, the antenna structure includes a seventh antenna segment having the first radius of curvature based on the central axis, an eighth antenna segment having the second radius of curvature, a fourth capacitive load arranged between the seventh and eighth antenna segments and electrically connecting the seventh and eighth antenna segments in series, and a second interlayer capacitive load electrically connecting the sixth antenna segment and the seventh antenna segment in series, wherein the seventh antenna segment and the eighth antenna segment are arranged on a third plane that intersects the central axis and is different from the first plane and the second plane, and the first interlayer capacitive load and the second interlayer capacitive load may have a predetermined angle based on the central axis.

[0043] Also, here, the first antenna segment may extend from one end to the other end, and the other end of the first antenna segment may be electrically connected to one end of the first capacitive load, and the second antenna segment may extend from one end to the other end, and the one end of the second antenna segment may be electrically connected to the other end of the first capacitive load.

[0044] In addition, here, when the AC power is applied to the antenna structure, a maximum voltage of the other end of the first antenna segment with respect to a reference node may correspond to a maximum voltage of the other end of the second antenna segment with respect to the reference node.

[0045] Further, here, when the AC power source is applied to the antenna structure, the voltage of the other end of the second antenna segment relative to one end of the second antenna segment may correspond to the voltage of the other end of the first antenna segment relative to one end of the first antenna segment.

[0046] In addition, here, when the AC power is applied to the antenna structure, the magnitude of the maximum voltage of the other end of the first antenna segment with respect to the reference node may correspond to the magnitude of the maximum voltage of one end of the second antenna segment with respect to the reference node.

[0047] In addition, at any time after the AC power is applied to the antenna structure, the voltage at the other end of the first antenna segment with respect to the reference node and the voltage at one end of the second antenna segment with respect to the reference node may have opposite signs to each other.

[0048] Here, the antenna structure includes a first point located between one end and the other end of the first antenna segment and a second point located between one end and the other end of the second antenna segment, and when the AC power source is applied to the antenna structure, a maximum voltage of the first point with respect to a reference node may correspond to a maximum voltage of the second point with respect to the reference node.

[0049] In addition, at any time after the AC power is applied to the antenna structure, the voltage of the other end of the first antenna segment with respect to the reference node and the voltage of the other end of the second antenna segment with respect to the reference node may correspond to each other.

[0050] In addition, the antenna structure may be configured in at least one of a flat plate shape that guides plasma to an upper portion or a lower portion and a tube shape that guides plasma to a center portion.

[0051] According to yet another aspect of the present specification, a plasma generation device for applying an AC power source to induce plasma in a chamber can be provided, comprising a first antenna structure arranged to have a first radius of curvature based on a virtual central axis, the first antenna structure including a plurality of first antenna segments having the first radius of curvature and at least one first capacitive load arranged between the plurality of first antenna segments so that the plurality of first antenna segments are electrically connected in series, the plurality of first antenna segments at least partially overlapping with a virtual first plane perpendicular to the central axis, each of the plurality of first antenna segments having a first length, and the sum of the lengths of the plurality of first antenna segments being shorter than a circumference whose radius is the first radius of curvature.

[0052] Here, the plasma generating device includes a second antenna structure arranged on the first plane to have a second radius of curvature greater than the first radius of curvature based on the central axis, and the second antenna structure includes a plurality of second antenna segments having the second radius of curvature and at least one second capacitive load arranged between the plurality of second antenna segments so that the plurality of second antenna segments are electrically connected in series, and each of the plurality of second antenna segments has a first length, and a sum of the lengths of the plurality of second antenna segments may be shorter than a circumference whose radius is the second radius of curvature.

[0053] Meanwhile, the first to eighth antenna segments described above may be interpreted as indicating any one of the antenna segments in the antenna structure, regardless of the order. For example, the first antenna segment and the second antenna segment may refer to antenna segments arranged on the same plane.

[0054] Furthermore, the series connection described above does not only refer to a direct connection between elements, but also includes an indirect connection between elements by including another element between the elements.

[0055] According to yet another aspect of the present specification, an antenna structure that is disposed outside a plasma generation unit and provides an induced electric field to induce plasma inside the plasma generation unit includes a first antenna that is formed along an outer wall surface of the plasma generation unit and induces an electric field, and a first cooling water flow path for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generation unit and is in surface contact with the plasma generation unit via the first inner diameter surface, the first antenna includes a first surface that defines contact with the first cooling water flow path and is parallel to the outer wall of the plasma generation unit and the first inner diameter surface, and the antenna structure can provide an antenna structure that absorbs heat from the plasma generation unit via the inner diameter surface and the first surface to prevent the temperature of the plasma generation unit from increasing due to the plasma.

[0056] Here, the first turn antenna may include a first outer diameter surface connected to the first inner diameter surface, and the first outer diameter surface may be bent in a direction away from the plasma generating portion along a vertical direction.

[0057] Further, here, the device may include a second antenna electrically connected to the first antenna and arranged to encase the first antenna, and a third antenna electrically connected to the second antenna and arranged to encase the second antenna, and the second antenna and the third antenna may be arranged such that the distance between the first antenna and the second antenna is longer than the distance between the second antenna and the third antenna.

[0058] Further, here, a second antenna is provided that is electrically connected to the first antenna, is arranged to enclose the first antenna, and has at least a second inner diameter surface and a second outer diameter surface, the second inner diameter surface is arranged closer to the plasma generation portion than the second outer diameter surface, and the second inner diameter surface of the second antenna may not be parallel to the first inner diameter surface of the first antenna.

[0059] Also, here, a second antenna may be provided that is electrically connected to the first antenna, is arranged on the same plane as the first antenna so as to enclose the first antenna, and is composed of at least a second inner diameter surface and a second outer diameter surface, the second inner diameter surface is arranged closer to the plasma generation portion than the second outer diameter surface, and the distance between the second inner diameter surface and the first outer diameter surface may increase as it moves away from the plane in the longitudinal direction of the plasma generation portion.

[0060] Also, here, a second antenna may be provided that is electrically connected to the first antenna and disposed so as to encase the first antenna, and a cross section of the second antenna may be different from a cross section of the first antenna.

[0061] Further, here, the device may include a second antenna electrically connected to the first antenna and arranged to wrap around the first antenna, and a connection portion connecting the first antenna and the second antenna, wherein the first antenna and the second antenna have different cross-sections, and the cross-section of one end of the connection portion corresponds to the cross-section of the first antenna, and the cross-section of the other end of the connection portion corresponds to the cross-section of the second antenna.

[0062] Here, the connection portion may include at least a portion of the end of the first antenna and at least a portion of the expanded end of the second antenna.

[0063] Here, the connection portion may include a capacitive element.

[0064] The antenna may further include a fastening portion coupled to the first antenna to provide a fastening force to the first antenna.

[0065] According to still another embodiment of the present specification, there is provided a plasma generation device comprising: a plasma generation unit including an internal space in which plasma is induced; and an antenna structure disposed outside the plasma generation unit and providing an induced electric field to induce plasma into the internal space of the plasma generation unit, wherein the antenna structure includes a first antenna formed along an outer wall surface of the plasma generation unit to induce an electric field, a first cooling water flow path for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generation unit and is in surface contact with the plasma generation unit via the first inner diameter surface, the first antenna includes a first surface that defines the first cooling water flow path and is parallel to the outer wall of the plasma generation unit and the first inner diameter surface, and the antenna structure absorbs heat from the plasma generation unit via the inner diameter surface and the first surface to prevent the temperature of the plasma generation unit from increasing due to the plasma.

[0066] Here, the plasma generating part may have a thickness of 0.5 mm or more and 30 mm or less.

[0067] Here, the diameter of the plasma generating part may be 10 mm or more and 300 mm or less.

[0068] In addition, here, the plasma generating device may further include a heat transfer member thermally coupled to the plasma generating unit and the antenna structure, respectively, the plasma generating unit and the antenna structure being arranged at a distance from each other, and the heat transfer member being arranged between the plasma generating unit and the antenna structure.

[0069] At least a part of the plasma generating portion may be made of at least one material selected from the group consisting of aluminum oxide, silicon nitride, silicon nitride, silicon dioxide, yttrium oxide, ceramic, silicon carbide, and combinations thereof.

[0070] In addition, an inner surface of the plasma generating portion that defines the internal space may be made of silicon carbide.

[0071] The present specification relates to an antenna structure and a plasma generation device using the same.

[0072] Here, plasma can be induced or generated in various ways in a state (phase) where a material is separated into negatively charged electrons and positively charged ions by application of high energy. Among them, inductively coupled plasma (ICP) is a plasma generated by forming an inductive electric field or a charged electric field in a specific space by supplying power to a coil or an antenna, and can generally be driven by a high frequency power source such as a radio frequency (RF). Meanwhile, in the following description, for convenience of explanation, it is assumed that the plasma generated by the plasma generating device is inductively coupled plasma, but the technical idea of ​​the present specification is not limited thereto.

[0073] Here, the antenna is an inductive element or load that forms an electric field or magnetic field around it when a voltage or current is applied, and may refer to a coil or inductor, etc., or may refer to an equivalent circuit realized by an element other than an inductive element.

[0074] Here, the antenna structure may refer to a structure including at least one antenna, and may further include at least one capacitive element or load, and may be realized in a form in which at least one antenna or capacitive element is connected or arranged in a specific manner.

[0075] On the other hand, the plasma generating device according to one embodiment of this specification can be widely used in various fields such as semiconductors, display processing, environment, and energy, and it has been made clear in advance that the plasma generating device described below is not limited to use in a specific field, but can be commonly used in fields where plasma is utilized.

[0076] An inductively coupled plasma system (ICP system) 10 according to one embodiment of the present disclosure will now be described with reference to FIGS.

[0077] 1 is a diagram of a plasma system 10 according to an embodiment of the present disclosure. The plasma system 10 can use an RF power source to supply RF power to an antenna structure to induce generation of inductively coupled plasma in a plasma generating section.

[0078] Referring to FIG. 1, a plasma system 10 may include a plasma generating device 100 including an antenna structure 1000 and a plasma generating portion 2000, and an RF power supply 200.

[0079] The plasma generating device 100 can generate plasma by receiving RF power from the RF power source 200. In particular, when RF power is supplied to the antenna structure 1000, a time-varying current flows, and based on this, an induced electric field can be generated in the plasma generating unit 2000 to induce plasma.

[0080] The antenna structure 1000 can be electrically connected to the RF power source 200. For example, the antenna structure 1000 may be connected to the RF power source 200 in series or parallel with a conductor, or may be connected in series or parallel with the RF power source 200 via an electrical element.

[0081] The antenna structure 1000 may be physically or electrically connected to the plasma generating unit 2000. The connection between the antenna structure 1000 and the plasma generating unit 2000 will be described in detail later.

[0082] The plasma generating unit 2000 may include a region in which plasma generation is induced. For example, the plasma generating unit 2000 may refer to a space in which plasma can be generated and maintained, such as a chamber or a tube.

[0083] FIG. 2 is a diagram of an example implementation of a plasma system 10 according to one embodiment of the present disclosure.

[0084] 2, the plasma system 10 can be realized in various ways depending on the way the plasma is used. Specifically, the positional relationship between the RF power source 200, the antenna structure 1000, and the plasma generating unit 2000 can be set depending on the way the plasma is used.

[0085] 2a, the plasma system 10 may generate plasma above or below the antenna structure 1000. For example, the antenna structure 1000 may be configured as a flat plate and disposed at the upper end of a plasma generating unit 2000, and the plasma generating unit 2000 may be provided in a chamber including a process object such as a semiconductor wafer, a silicon substrate, or a display, and may perform a semiconductor process or a display process using a process gas flowing into the plasma generating unit 2000 and an induced plasma. As another example, the antenna structure 1000 may be configured as a flat plate and disposed at the lower end of the plasma generating unit 2000, and the plasma generating unit 2000 may be provided in a chamber including a process object such as a semiconductor wafer, a silicon substrate, or a display, and may perform a semiconductor process or a display process using a process gas flowing into the plasma generating unit 2000 and an induced plasma.

[0086] 2b, the plasma system 10 may generate plasma at the center of the antenna structure 1000. For example, the antenna structure 1000 may be configured in a tube shape and provided in a form surrounding or winding the plasma generating unit 2000, and the plasma generating unit 2000 may be provided in a dielectric tube, and radicals may be generated using the process gas and plasma supplied to the plasma generating unit 2000, and the radicals may be provided to a separate process chamber.

[0087] On the other hand, the shape of the antenna structure 1000 is not limited to being flat or tubular as shown in FIG. 2, and it goes without saying that the antenna structure 1000 may be configured in a tubular shape in FIG. 2a and in a flat shape in FIG. 2b.

[0088] The plasma generating unit 2000 that can be used in the plasma system 10 will be specifically described below with reference to FIG.

[0089] FIG. 3 is a diagram illustrating a plasma generating unit 2000 according to one embodiment of the present disclosure.

[0090] The plasma generating unit 2000 may be configured in various shapes. For example, referring to Fig. 3, the plasma generating unit 2000 may be configured in a shape including an internal space in which plasma is induced. Specifically, the plasma generating unit 2000 may have a hollow cylindrical, ring, or tube shape.

[0091] The plasma generating unit 2000 may have a specific thickness t. For example, referring to FIG. 3, when the plasma generating unit 2000 is configured in a tube shape, the thickness t of the plasma generating unit 2000 may be determined to be within 0.5 mm to 30 mm. Here, when the thickness t of the plasma generating unit 2000 is less than 0.5 mm, by-products are easily generated inside the plasma generating unit 2000 by the antenna structure 1000, and physical durability may be weakened. Here, when the thickness t of the plasma generating unit 2000 exceeds 30 mm, the inductive coupling between the antenna structure 1000 arranged around the plasma generating unit 2000 and the plasma induced inside the plasma generating unit 2000 becomes weak, making it difficult to induce or maintain the plasma, and the cooling efficiency of the plasma generating unit 2000 by the antenna structure 1000 described later may be reduced. Therefore, the above-mentioned range of thickness t of the plasma generating unit 2000 may be critical in that when the antenna structure 1000 is electrically connected to the plasma generating unit 2000 as described below, the plasma can be stably guided and maintained inside the plasma generating unit 2000, thereby improving the durability of the plasma generating unit 2000.

[0092] The plasma generating unit 2000 may have a specific diameter d. For example, referring to FIG. 3, when the plasma generating unit 2000 has a tubular shape, the diameter d may be determined within a range of 10 mm to 300 mm. Here, the diameter d may refer to the diameter of the inner surface of the plasma generating unit 2000, the diameter of the outer surface, or the average diameter of the inner surface and the outer surface. Here, when the diameter d of the plasma generating unit 2000 is less than 10 mm, the shape of the plasma induced inside the plasma generating unit 2000 may be relatively large in surface area compared to the volume, resulting in energy loss. In addition, here, when the diameter d of the plasma generating unit 2000 exceeds 300 mm, the induction power density required for induction of plasma becomes very low, which may make it difficult to manufacture the antenna structure 1000 or the RF power source 200. Therefore, the above-mentioned range of the diameter d of the plasma generating unit 2000 may have a critical significance in that it makes it easier to manufacture the RF power source 200 and the antenna structure 1000 of the plasma system 10 and prevents plasma energy loss, thereby increasing the plasma induction efficiency.

[0093] The above mainly describes the case where the shape of the plasma generating part 2000 is a hollow cylinder or tube, but the technical idea of ​​this specification is not limited to this. For example, the plasma generating part 2000 may have a polygonal shape including an internal space in which plasma can be guided, and it goes without saying that the contents regarding the thickness t and diameter d described above can also be applied in this case.

[0094] The plasma generating unit 2000 may be made of various materials. For example, the plasma generating unit 2000 may be made of a non-conductive material. As another example, the plasma generating unit 2000 may be made of a material with high thermal conductivity. Specifically, the plasma generating unit 2000 may be made of aluminum nitride (AlN), aluminum oxide (Al2O3), silicon nitride (SiN), silicon nitride (Si3N4), silicon dioxide (SiO2), yttrium oxide (Y2O3), or silicon carbide (SiC).

[0095] Furthermore, the plasma generating unit 2000 may be made of a material that does not generate impurities (particles) by reacting with gases (e.g., NF3, Ar, CO2, CH4, NF3, O2, H2, etc.) flowing into the plasma generating unit 2000 for induction of plasma. For example, the plasma generating unit 2000 may be made of silicon carbide (SiC).

[0096] The RF power supply will be specifically described below with reference to FIG.

[0097] FIG. 4 is a diagram of an RF power supply 200 according to one embodiment of the present disclosure.

[0098] 4, the RF power source 200 may include an AC power source 210, a rectifier 220, an inverter 230, a controller 240, and a sensor module 250. The RF power source 200 may convert a first AC power source supplied from the AC power source 210 into a second AC power source and supply it to a load. For example, the RF power source 200 may convert the first AC power source used in general households or industries into a second AC power source having a frequency of several hundred kHz to several tens of MHz and a power of several kW or more and provide it to the antenna structure 1000.

[0099] Here, the load may include the antenna structure 1000 and the plasma generated by the antenna structure 1000 .

[0100] The rectifier 220 can convert the output of the AC power source 210 into DC power. For example, the rectifier 220 can convert the first AC power source supplied from the AC power source 210 into DC power source and apply it to both ends of the inverter 230.

[0101] The inverter 230 may receive the DC power from the rectifier 220 and supply the second AC power to the load. In this case, the inverter 230 may provide the second AC power to the load using a switching signal received from the controller 240. Here, the inverter 230 may include at least one switch element controlled by the switching signal, and the second AC power supplied from the inverter 230 to the load may have a driving frequency set based on the switching signal provided by the controller 240. To this end, the inverter 230 may be provided as a half-bridge type or a full-bridge type controlled by a pulse width modulation (PWM) method.

[0102] On the other hand, a capacitive element may be disposed between the rectifier 220 and the inverter 230. For example, the RF power supply 200 includes a capacitor connected in parallel with the rectifier 220 and the inverter 230, and the capacitor can discharge the AC component of the power supply applied to the inverter 230 to a ground node (GND).

[0103] The controller 240 may generate a switching signal by receiving sensing data from the sensor module 250. For example, the controller 240 may include an FPGA and may obtain data related to a resonant frequency of a load from the sensor module 250 to generate a switching signal.

[0104] The sensor module 250 can enable the controller 240 to obtain data related to the resonant frequency of the load or data related to the power supplied to the load. To this end, the sensor module 250 can sense the magnitude and phase of the current flowing through the load or the inverter 230, the magnitude and phase of the applied voltage, the magnitude of the relative potential or power, etc.

[0105] As described above, the RF power supply 200 can control the driving frequency of the second AC power supply provided to the load based on data related to the resonant frequency of the load. In other words, the RF power supply 200 can track the resonant frequency of the load that changes in response to plasma generation and set the driving frequency of the second AC power supply to be the same as the resonant frequency of the load. This can prevent unnecessary power consumption and improve the durability of the plasma system.

[0106] The configuration and arrangement of the antenna structure 1000 will be described below with reference to FIGS.

[0107] 5 and 6 are diagrams showing how antenna segments are arranged according to one embodiment of the present disclosure.

[0108] 5, the antenna structure 1000 may include multiple antenna segments. The antenna structure 1000 may be configured with multiple antenna segments depending on the intensity, density, or generation range of plasma required in the plasma application field. For example, the antenna structure 1000 may be arranged in a wide area to provide plasma in a wide range, and in this case, the antenna structure 1000 may be divided into multiple antenna segments to prevent the length of the antenna structure 1000 from becoming excessively long and increasing the electric potential at the antenna structure 1000.

[0109] In the following, for ease of explanation, the antenna segments are described as including first to fourth antenna segments 1110, 1120, 1130, and 1140, but the antenna structure 1000 can include m antenna segments (m is a natural number), and the following explanation can be applied commonly to each case.

[0110] The antenna segment may be provided as a portion of an antenna, an induction coil or inductor, a copper conductor, etc. The physical properties such as cross-sectional shape, cross-sectional area, thickness, width, etc. of the antenna segment may be determined based on the electrical properties required for the antenna structure 1000 or antenna segment, such as inductance, mutual inductance, parasitic inductance, capacitance, parasitic capacitance, resistance, or parasitic resistance.

[0111] In addition, for the sake of convenience in the following explanation, the antenna segment is assumed to have an arc shape, but the technical ideas of this specification are not limited to this, and in addition to an arc shape, the antenna segment can have specific graphical shapes such as a straight line, a curve, a broken line, a broken curve, a circle or a polygon, a doughnut, a solenoid, etc., and although it is generally configured in a three-dimensional solid shape, it goes without saying that it may also be configured in a two-dimensional shape such as a thin film or plating.

[0112] The antenna segments may be disposed in a first plane P1 at a certain distance from the central axis CA. Specifically, the antenna segments may be disposed in the first plane P1 and spaced a predetermined distance from the central axis CA.

[0113] Here, the central axis CA may refer to an imaginary axis. For example, the central axis CA may be understood as an imaginary straight line passing through the center of the plasma generated in the plasma system 10.

[0114] Here, the first plane P1 may refer to a virtual plane on which the antenna segments are arranged. For example, the first plane P1 may refer to a virtual plane perpendicular to the central axis CA. In yet another example, the first plane P1 may refer to a virtual plane intersecting the central axis CA. On the other hand, all of the antenna segments may be arranged on the first plane P1, or at least some of the antenna segments may be arranged on the first plane P1, and the other parts of the antenna segments may be arranged on a plane different from the first plane P1.

[0115] The antenna segments may have a particular curvature or a particular radius of curvature. For example, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be configured in an arc shape having a first radius of curvature RC1. In yet another example, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may have corresponding curvatures or radii of curvature. In yet another example, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may have different curvatures or radii of curvature.

[0116] Here, the radius of curvature or the curvature may be set based on the size of the antenna structure 1000. For example, the larger the size or volume of the antenna structure 1000, the larger the radius of curvature and the smaller the curvature.

[0117] The antenna segments may extend to a particular length. For example, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be arranged to extend to corresponding lengths or to extend to different lengths. Specifically, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may have the same first length or may have different lengths.

[0118] The total length of the antenna segments may be set to a preset value or less. For example, when the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged to have a first radius of curvature RC1 with respect to the central axis CA on the first plane P1 and extend a first length, the total length of the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be less than the length of a circumference having the first radius of curvature RC1 as its radius. In yet another example, when the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged so that at least a portion of them has a first radius of curvature RC1 and extends a first length with respect to the central axis CA on the first plane P1, and the other portion has a second radius of curvature RC2 and extends a second length, the total length of each of the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be smaller than the length of a circumference having a radius of the first radius of curvature RC1 or the second radius of curvature RC2. In this case, the first to fourth antenna segments 1110, 1120, 1130, and 1140 can be arranged so as not to be in physical contact with each other.

[0119] Meanwhile, an electric element may be disposed between the antenna segments. For example, a capacitive element may be disposed between the antenna segments, and the capacitive element may electrically connect the antenna segments. The arrangement of the electric element will be described in detail later.

[0120] The antenna segments included in the antenna structure 1000 may be arranged in a plurality of turns. Referring to Fig. 6, the antenna segments may be arranged in two turns on a first plane P1 based on a central axis CA. Specifically, the first turn may include first to fourth antenna segments 1110, 1120, 1130, and 1140, and the second turn may include fifth to eighth antenna segments 1210, 1220, 1230, and 1240. Here, the antenna segment of the first turn may have a first radius of curvature RC1, and the antenna segment of the second turn may have a second radius of curvature RC2 larger than the first radius of curvature RC1.

[0121] Each of the antenna segments of the second turn may be arranged to correspond to each of the antenna segments of the first turn. For example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged in the first to fourth quadrants of the first plane P1, respectively, the fifth to eighth antenna segments 1210, 1220, 1230, and 1240 can be arranged in the first to fourth quadrants of the first plane P1, respectively.

[0122] Here, the first antenna segment 1110 may be adjacent to the second antenna segment 1120 and the fourth antenna segment 1140 in the arc direction, and adjacent to the fifth antenna segment 1210 in the direction perpendicular to the central axis CA. The second antenna segment 1120 may be adjacent to the first antenna segment 1110 and the third antenna segment 1130 in the arc direction, and adjacent to the sixth antenna segment 1220 in the direction perpendicular to the central axis CA. The third antenna segment 1130 may be adjacent to the second antenna segment 1120 and the fourth antenna segment 1140 in the arc direction, and adjacent to the seventh antenna segment 1230 in the direction perpendicular to the central axis CA. The fourth antenna segment 1140 may be adjacent to the first antenna segment 1110 and the third antenna segment 1130 in the arc direction, and adjacent to the eighth antenna segment 1240 in the direction perpendicular to the central axis CA.

[0123] The antenna segment of the second turn can extend to a length longer than the antenna segment of the first turn. For example, when the first antenna segment 1110 is arranged to extend to a first length, the fifth antenna segment 1210 can extend to a second length longer than the first length. Here, the ratio of the second length to the first length can correspond to the ratio of the second radius of curvature RC2 of the fifth antenna segment 1110 to the first radius of curvature RC1 of the first antenna segment 1110. Also, here, the central angle of the first antenna segment 1110 extending to the corresponding first length with the central axis CA can correspond to the central angle of the fifth antenna segment 1210 extending to the second length with the central axis CA. Or, the central angle of the sector with the first antenna segment 1110 extending to the first length as an arc can correspond to the magnitude of the central angle of the sector with the fifth antenna segment 1210 extending to the second length as an arc. Alternatively, an extension line connecting one end of the first antenna segment 1110 and one end of the fifth antenna segment 1210 may coincide with the central axis CA.

[0124] Here, the central angle may be set according to the number of antenna segments arranged per turn. For example, when the number of antenna segments arranged per turn is x (x is a natural number), the central angle formed by each antenna segment with the central axis CA may be about 360 / x° or less. Specifically, referring again to FIG. 5, the antenna segments include a first antenna segment 1110 to a fourth antenna segment 1140, and in this case, the central angle formed by each antenna segment with the central axis CA may be less than or equal to about 90°.

[0125] The distance between the first turn and the second turn may be set based on the electrical properties of the antenna structure 1000. As an example, the distance between the first turn and the second turn may be set based on the parasitic capacitance that may occur between the antenna segments. For example, the distance between the first turn and the second turn may be set to a distance that minimizes the effect of the parasitic capacitance between the first antenna segment 1110 and the fifth antenna segment 1210 when power is applied to the antenna structure 1000. In yet another example, the distance between the first turn and the second turn may be set in consideration of the overall volume of the antenna structure 1000. For example, in order to reduce the width of the antenna structure 1000 within the manufacturing tolerance range, the distance between the first turn and the second turn may be set to about 1 mm or within a range of 0.5 mm to 3.5 mm. In this case, the distance between the first turn and the second turn may be set to a distance at which arcing between the turns does not occur when the plasma system 10 is driven at a specific driving frequency. In yet another example, the distance between the first turn and the second turn may be set taking into account the elasticity of the plasma generating section 2000. It goes without saying that the above-mentioned method for setting the distance between the first turn and the second turn can also be used to set the distance between turns in the antenna structure 1000, such as the distance between the second turn and the third turn.

[0126] The inductance of the second turn antenna segment may be set based on the inductance of the first turn antenna segment. For example, the inductance of the fifth antenna segment 1210 may correspond to the inductance of the first antenna segment 1110. In yet another example, the inductance of the fifth antenna segment 1210 may be set to be greater than the inductance of the first antenna segment 1110.

[0127] Alternatively, the antenna segments of the first and second turns may be arranged in different planes, for example, the antenna segment of the first turn may be arranged in a first plane P1, and the antenna segment of the second turn may be arranged in a plane parallel to the first plane P1 or at a certain angle to the first plane P1.

[0128] The first turn and the second turn may include the same number of antenna segments or different numbers of antenna segments. For example, the first turn may include four antenna segments 1110, 1120, 1130, and 1140, and the second turn may include only the fifth antenna segment 1210 and the seventh antenna segment 1230, which are arranged symmetrically with respect to the central axis CP.

[0129] In the above, for convenience of explanation, the antenna structure 1000 has been described based on being configured with two turns, but the technical idea of ​​this specification is not limited to this, and the antenna structure 1000 can be configured with n turns (n ​​is a natural number), and further, the antenna structure 1000 can include n turns each including m antenna segments. In this way, in the case of a multi-segment, multi-turn antenna structure 1000, the above-mentioned antenna segment arrangement method can be similarly applied. For example, when the antenna structure 1000 is configured with three turns each including six antenna segments, the first turn includes six antenna segments having a first radius of curvature RC1 and a first length, the second turn includes six antenna segments having a second radius of curvature RC2 and a second length, and the third turn includes six antenna segments having a third radius of curvature and a third length, and the total length of the antenna segments in each turn may be shorter than the circumference having a radius equal to the radius of curvature of the antenna segments in each turn.

[0130] A method for connecting the antenna segments in the antenna structure 1000 will be described below with reference to FIGS.

[0131] 7-10 are diagrams of an antenna structure 1000 including antenna segments and capacitive elements according to one embodiment of the present disclosure.

[0132] 7, the antenna structure 1000 is configured in a flat plate shape and can include an antenna segment, a first main capacitive element 1500, a second main capacitive element 1600, and an auxiliary capacitive element. The antenna structure 1000 can electrically or physically connect multiple antenna segments by including the auxiliary capacitive element, and can be connected to an RF power source 200 via the first main capacitive element 1500 and the second main capacitive element 1600.

[0133] Here, the auxiliary capacitive elements can include first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, 1723 that electrically or physically connect the antenna segments within a turn, and a first inter-turn capacitive element 1731 that electrically or physically connects different turns.

[0134] Here, the main capacitive elements 1500, 1600 and the auxiliary capacitive elements are elements represented as capacitors or equivalent circuits of capacitors, and may refer to elements having a certain capacitance or capacitive reactance. For example, the main capacitive elements 1500, 1600 and the auxiliary capacitive elements may include a ceramic capacitor having good high frequency characteristics, or a multi-layer ceramic capacitor (MLCC) in which a plurality of capacitors are connected in series and / or parallel, or a capacitor array.

[0135] The auxiliary capacitive element may electrically or physically connect multiple antenna segments. For example, referring again to FIG. 7, one end of the first auxiliary capacitive element 1711 may be connected to one end of the first antenna segment 1110, and the other end of the first auxiliary capacitive element 1711 may be connected to one end of the second antenna segment 1120. The first antenna segment 1110 may extend a first length from one end of the first auxiliary capacitive element 1711 with a first radius of curvature RC1, and the second antenna segment 1120 may extend a first length from the other end of the first auxiliary capacitive element 1711 with a first radius of curvature RC1.

[0136] In another example, the first antenna segment 1110 may extend a first length with a first radius of curvature RC1 from one end of the first auxiliary capacitive element 1711, and the second antenna segment 1120 may extend the first length with a second radius of curvature RC2 from the other end of the first auxiliary capacitive element 1711. In this case, the first radius of curvature RC1 and the second radius of curvature RC2 may be the same or different.

[0137] In yet another example, the first antenna segment 1110 may extend a first length with a first radius of curvature RC1 from one end of the first auxiliary capacitive element 1711, and the second antenna segment 1120 may extend a second length with the first radius of curvature RC1 from the other end of the first auxiliary capacitive element 1711. In this case, the first length and the second length may be the same or different.

[0138] The auxiliary capacitive elements may be disposed between the antenna segments. For example, referring again to FIG. 7, the first to third auxiliary capacitive elements 1711, 1712, and 1713 may be disposed between the first to fourth antenna segments 1110, 1120, 1130, and 1140 in the first turn of the antenna structure 1000. The first auxiliary capacitive element 1711 may be disposed between the first antenna segment 1110 and the second antenna segment 1120. The second auxiliary capacitive element 1712 may be disposed between the second antenna segment 1120 and the third antenna segment 1130. The third auxiliary capacitive element 1713 may be disposed between the third antenna segment 1130 and the fourth antenna segment 1140. The fourth to sixth auxiliary capacitive elements 1721, 1722, and 1723 may be disposed between the fifth to eighth antenna segments 1210, 1220, 1230, and 1240 in the second turn of the antenna structure 1000. The fourth auxiliary capacitive element 1721 may be disposed between the fifth antenna segment 1210 and the sixth antenna segment 1220. The fifth auxiliary capacitive element 1722 may be disposed between the sixth antenna segment 1220 and the seventh antenna segment 1230. The sixth auxiliary capacitive element 1723 may be disposed between the seventh antenna segment 1230 and the eighth antenna segment 1240.

[0139] Here, the first auxiliary capacitive element 1711 may be disposed adjacent to the second auxiliary capacitive element 1712 in the arc direction and adjacent to the fourth auxiliary capacitive element 1721 in the direction perpendicular to the central axis CA. The second auxiliary capacitive element 1712 may be disposed adjacent to the first auxiliary capacitive element 1711 and the third auxiliary capacitive element 1713 in the arc direction and adjacent to the fifth auxiliary capacitive element 1722 in the direction perpendicular to the central axis CA. The third auxiliary capacitive element 1713 may be disposed adjacent to the second auxiliary capacitive element 1712 in the arc direction and adjacent to the sixth auxiliary capacitive element 1723 in the direction perpendicular to the central axis CA.

[0140] The auxiliary capacitive element may be arranged to have a specific positional relationship with the antenna segment. For example, the first auxiliary capacitive element 1711 may be arranged to pass through a virtual line connecting the other end of the first antenna segment 1110 and one end of the second antenna segment 1120. In yet another example, the first auxiliary capacitive element 1711 may be connected to the first antenna segment 1110 and the second antenna segment 1120 via an electrical connection member such as a conductor, but may be arranged further away from the central axis CA compared to the antenna segment to which it is connected. In yet another example, the first auxiliary capacitive element 1711 may be arranged between the first turn and the second turn. Specifically, the first auxiliary capacitive element 1711 may be arranged at a distance from the central axis CA that is greater than the first radius of curvature RC1 and less than the second radius of curvature RC2.

[0141] Alternatively, the auxiliary capacitive elements may be arranged on a plane different from the plane on which the antenna segments are arranged. For example, at least one of the first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, and 1723 may be arranged at a preset distance from the first plane P1. Here, the preset distance may take into consideration the volume or size of the auxiliary capacitive element.

[0142] The auxiliary capacitive elements may be arranged to have a preset positional relationship between the antenna segments. For example, referring to FIG. 7 again, at least two of the first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, and 1723 may be arranged symmetrically with respect to the central axis CA. Specifically, the first auxiliary capacitive element 1711 and the third auxiliary capacitive element 1713 may be symmetric with respect to the central axis CA. In yet another example, the first turn auxiliary capacitive element and the second turn auxiliary capacitive element may be arranged at positions corresponding to each other. Specifically, an extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721 may coincide with the central axis CA. Alternatively, an extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721 may pass through the third auxiliary capacitive element 1713 and the sixth auxiliary capacitive element 1723. Alternatively, the extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721 and the extension line connecting the second auxiliary capacitive element 1712 and the fifth auxiliary capacitive element 1722 may be located at an intersecting or twisted position within a predetermined range from the central axis CA.

[0143] In a similar manner as described above, the first to fourth antenna segments 1110, 1120, 1130, and 1140 can be electrically connected via the first to third auxiliary capacitive elements 1711, 1712, and 1713. In addition, the fifth to eighth antenna segments 1210, 1220, 1230, and 1240 can be electrically connected via the fourth to sixth auxiliary capacitive elements 1721, 1722, and 1723.

[0144] The number of auxiliary capacitive elements may be set based on the number of layers, turns, and antenna segments of the antenna structure 1000. For example, referring again to Figure 7, if the antenna structure 1000 is composed of one layer including two turns with four antenna segments each, the antenna structure 1000 may include seven auxiliary capacitive elements.

[0145] On the other hand, the multiple turns constituting the antenna structure 1000 may each include a different number of antenna segments. As an example, referring to FIG 8, the antenna structure 1000 may include a first turn including first to fourth antenna segments 1110, 1120, 1130, and 1140 and a second turn including fifth to tenth antenna segments 1210, 1220, 1230, 1240, 1250, and 1260.

[0146] Here, each antenna segment in the antenna structure 1000 can have substantially the same length or different lengths. For example, both the antenna segment of the first turn and the antenna segment of the second turn can have the same length. In yet another example, each antenna segment of the first turn can have a first length, and each antenna segment of the second turn can have a second length shorter than the first length. In this case, the first length and the second length can be set based on the radius of curvature of each turn. In this case, the antenna segments constituting each turn of the antenna structure 1000 do not necessarily need to extend to the same length.

[0147] On the other hand, if the turns constituting the antenna structure 1000 each include a different number of antenna segments, each turn in the antenna structure 1000 may include a different number of auxiliary capacitive elements. As an example, referring again to FIG. 8, the first turn of the antenna structure 1000 may include first to third auxiliary capacitive elements 1711, 1712, and 1713, and the second turn may include fourth to eighth auxiliary capacitive elements 1721, 1722, 1723, 1724, and 1725.

[0148] Here, the auxiliary capacitive element included in the first turn and the auxiliary capacitive element included in the second turn of the antenna structure 1000 may have a preset positional relationship. Specifically, at least one of the auxiliary capacitive elements included in the first turn and at least one of the auxiliary capacitive elements included in the second turn may be located on a straight line. For example, referring to FIG. 8 again, the second auxiliary capacitive element 1712 of the first turn of the antenna structure 1000 and the sixth auxiliary capacitive element 1723 of the second turn may be disposed within a preset region from a straight line perpendicular to the central axis CA and passing through the center of the antenna structure (100). However, the positional relationship between the auxiliary capacitive elements in the antenna structure 1000 is not limited to the above case, and the auxiliary capacitive elements in the antenna structure 1000 may be disposed arbitrarily without any specific positional relationship between them.

[0149] Each of the layers constituting the antenna structure 1000 may include a different number of antenna segments and a different number of auxiliary capacitive elements. The number of antenna segments and auxiliary capacitive elements included in different layers may be set in a manner similar to the method for setting the number of antenna segments and auxiliary capacitive elements included in different turns described above.

[0150] The auxiliary capacitive element may be disposed between the turns and electrically or physically connect the antenna segments. For example, referring again to FIG. 7, the auxiliary capacitive element may be disposed between the first turn and the second turn and electrically connect the first turn and the second turn. Specifically, the first inter-turn capacitive element 1731 may connect the fourth antenna segment 1140 constituting the first turn and the fifth antenna segment 1210 constituting the second turn in series. In this case, the first inter-turn capacitive element 1731 may be connected to the antenna segments directly or via a separate connection part such as a conductor, and thus the antenna segment connected to the first inter-turn capacitive element 1731 may have a length shorter or longer than the other antenna segments. Although not shown, the first inter-turn capacitive element 1731 may connect the first antenna segment 1110 constituting the first turn and the eighth antenna segment 1240 constituting the second turn in series. At this time, the antenna structure 1000 can be wound from the inner turn to the outer turn in a counterclockwise direction based on the direction from the first plane P1 to the second plane P2.

[0151] Here, the inter-turn capacitive element may have a different shape from the other auxiliary capacitive elements or may have a separate connection portion to connect the turns. For example, one end and the other end of the first inter-turn capacitive element 1731 may be spaced apart from the central axis CA at different distances. Specifically, one end of the first inter-turn capacitive element 1731 connected to the fourth antenna segment 1140 of the first turn may be spaced apart from the central axis CA at a shorter distance than the other end of the first inter-turn capacitive element 1731 connected to the fifth antenna segment 1210 of the second turn. In yet another example, the first inter-turn capacitive element 1731 may include a first connection portion extending from one end of the first inter-turn capacitive element 1731 to the fourth antenna segment 1140 and a second connection portion extending from the other end of the first inter-turn capacitive element 1731 to the fifth antenna segment 1210. In this case, the first connection portion and the second connection portion may include straight or curved conductors and may be spaced apart from the central axis CA at different distances.

[0152] The inclusion of inter-turn capacitive elements in the antenna structure 1000 allows all of the antenna segments within the antenna structure 1000 to be electrically connected.

[0153] The main capacitive elements 1500, 1600 may physically or electrically connect the antenna segments to the RF power source 200. For example, referring again to Figure 7, the first main capacitive element 1500 may electrically connect the first antenna segment 1110 and a first terminal of the inverter 230, and the second main capacitive element 1600 may electrically connect the eighth antenna segment 1240 and a second terminal of the inverter 230.

[0154] Alternatively, different from what is shown in FIG. 7, the first main capacitive element 1500 can electrically connect the fourth antenna segment 1140 and a first terminal of the inverter 230, and the second main capacitive element 1600 can electrically connect the fifth antenna segment 1240 and a second terminal of the inverter 230.

[0155] On the other hand, when the antenna structure 1000 is realized with a first turn including the first to fourth antenna segments 1110, 1120, 1130, and 1140, either the first antenna segment 1110 or the fourth antenna segment 1140 can be electrically connected to a first terminal of the inverter 230 via a first main capacitive element 1500, and the other can be electrically connected to a second terminal of the inverter 230 via a second main capacitive element 1600.

[0156] The main capacitive elements 1500, 1600 may have a specific shape or a separate connection to connect the RF power source 200 and the antenna structure 1000. For example, the first main capacitive element 1500 may extend in a direction parallel to the central axis CA at one end of the first antenna segment 1110. Alternatively, the first main capacitive element 1500 may extend in a direction away from the central axis CA at one end of the first antenna segment 1110. Alternatively, the first main capacitive element 1500 may be disposed such that at least a portion of the first main capacitive element 1500 overlaps with the first inter-turn capacitive element 1731 and at least a portion of the antenna segment when viewed from a direction perpendicular to the first plane P1. The second main capacitive element 1600 may extend parallel to the first plane P1 at the other end of the eighth antenna segment 1240. Alternatively, the second primary capacitive element 1600 may extend in a direction parallel to the central axis CA at the other end of the eighth antenna segment 1240.

[0157] On the other hand, at least one of the first and second primary capacitive elements 1500 and 1600 may be omitted from the antenna structure 1000. In this case, the RF power source 200 may provide electrical elements corresponding to the primary capacitive elements 1500, 1600. Also, at least some of the auxiliary capacitive elements may be omitted.

[0158] Also, the primary capacitive elements 1500, 1600 and the auxiliary capacitive elements may be disposed at a certain distance from the antenna segment. For example, if the auxiliary capacitive element is large in size or volume, it may be connected to the antenna segment via a separate connection part such as a conductor or wire at a certain distance from the antenna segment.

[0159] The manner in which the primary capacitive elements 1500, 1600 and auxiliary capacitive elements are connected to the antenna segments can determine the direction in which current flows through the antenna structure 1000. For example, referring again to Figure 7, if the first primary capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series through the first inter-turn capacitive element 1731, and the second primary capacitive element 1600 is connected in series with the eighth antenna segment 1240, when power is applied to the antenna structure 1000, the first and second turns may pass current in the same direction (clockwise or counterclockwise). 6, in a case where the first main capacitive element 1500 is connected in series with the fourth antenna segment 1140, the first antenna segment 1110 and the eighth antenna segment 1210 are connected in series with the first inter-turn capacitive element 1731, and the second main capacitive element 1600 is connected in series with the fifth antenna segment 1210, when power is applied to the antenna structure 1000, currents may flow in the same direction (clockwise or counterclockwise) through the first and second turns. In this case, when currents flow in the same direction through the first and second turns, the strength of the induced electric field for plasma generation may be increased compared to when currents flow in different directions through the first and second turns, and the potential difference between the antenna segments may be reduced, thereby reducing the effect of parasitic capacitance.

[0160] The antenna structure 1000 can generate plasma when an AC signal having a variable driving frequency is applied from an RF power source 200 via the main capacitive elements 1500, 1600.

[0161] Here, the driving frequency of the AC signal applied to the antenna structure 1000 can be time-varying based on the resonant frequency of the load including the antenna structure 1000 and the plasma.

[0162] The auxiliary capacitive element may have a predetermined capacitance or capacity. For example, the capacitance of the auxiliary capacitive element may be set based on at least one of the driving frequency range of the RF power source 200, the resonant frequency that the antenna structure 1000 should have, the number of antenna segments, and the inductance of the antenna segments. Specifically, when the antenna structure 1000 has a resonant frequency f_r and the total inductance of the antenna inductance in the antenna structure 1000 is L_tot, the capacitance of the auxiliary capacitive element may be set so that the total capacitance C_tot of the main capacitive elements 1500, 1600 and the auxiliary capacitive element connected to the antenna segments satisfies the following formula (1):

[0163] JPEG0007676424000001.jpg21170

[0164] In this case, when the capacitance due to the series connection of the first main capacitive element 1500 and the second main capacitive element 1600 is equivalent to one auxiliary capacitive element, the capacitance C_a of each auxiliary capacitive element can be set to a value obtained by multiplying C_tot, which satisfies the above formula (1), by the number of antenna segments included in the antenna structure 1000. Alternatively, the capacitance C_a of each auxiliary capacitive element may be set to satisfy the following formula (2) when the resonant frequency of the antenna structure 1000 is set to f_r and the inductance of each antenna segment is L_a.

[0165] JPEG0007676424000002.jpg19170

[0166] Specifically, when each antenna segment in the antenna structure 1000 has an inductance of about 1 μH and the resonant frequency of the antenna structure 1000 is specified to be 5.03 MHz, the capacitance of each auxiliary capacitive element can be set to about 1 nF, or when each antenna segment in the antenna structure 1000 has an inductance of about 0.7 μH and the capacitance of each auxiliary capacitive element is set to about 3.32 nF, the antenna structure 1000 can be driven at a driving frequency of about 3.3 MHz while satisfying the resonant condition.

[0167] When the capacitance of the auxiliary capacitive element is set to satisfy the above-mentioned conditions, each antenna segment of the antenna structure 1000 has a certain range of potential values, and the potential difference between the antenna segments can be reduced. This reduces the electrostatic field caused by capacitive coupling, reduces the power consumption of the antenna structure 1000, and improves the durability of the plasma system 10 and the safety of the plasma. Since the auxiliary capacitive element is disposed between the antenna segments in the antenna structure 1000, the potential of each antenna segment will be described later.

[0168] The main capacitive elements 1500, 1600 may have a predetermined electric capacitance or capacitance. For example, the capacitance of the main capacitive elements 1500, 1600 may be set based on at least one of the driving frequency range of the RF power source 200, the resonant frequency that the antenna structure 1000 should have, the number of antenna segments, the inductance of the antenna segments, and the capacitance of each of the auxiliary capacitive elements. Specifically, when the capacitance of the first main capacitive element 1500 is C1, the capacitance of the second main capacitive element 1600 is C2, and the capacitance of each of the auxiliary capacitive elements is C_a, C1 and C2 may be set to satisfy a specific condition. More specifically, C1 and C2 may be set to satisfy the following formula (3).

[0169] JPEG0007676424000003.jpg16170

[0170] When the main capacitive elements 1500, 1600 satisfy the above equation (3), the maximum voltage applied to the antenna segments in the antenna structure 1000 can be reduced to improve the resonance effect and increase the stability and efficiency of the plasma system 10.

[0171] In the above, the main example has been described in which the antenna structure 1000 is configured with four antenna segments arranged in two turns, but the technical ideas of this specification are not limited to this. In the antenna structure 1000 configured with multiple turns, each of which has multiple antenna segments, the main capacitive elements 1500, 1600 and auxiliary capacitive elements can be arranged in the same manner as described above.

[0172] 9 and 10, the antenna structure 1000 is configured in a tubular shape and can include an antenna segment, a first primary capacitive element 1500, a second primary capacitive element 1600, and an auxiliary capacitive element.

[0173] In the following, unless otherwise specified, the contents described with reference to Figures 5 to 8 can be similarly applied, and duplicated contents will be omitted. For example, a tubular antenna structure may be understood as having multiple antenna structures arranged on different planes, but physically or electrically connected to each other.

[0174] The tubularly configured antenna structure 1000 includes antenna segments that can be arranged in multiple layers.

[0175] 9 again, the antenna segments may be arranged in two layers on a first plane P1 and a second plane P2 with respect to the central axis CA. Specifically, the first layer may include first to fourth antenna segments 1110, 1120, 1130, and 1140, and the second layer may include ninth to twelfth antenna segments 1310, 1320, 1330, and 1340. Here, the antenna segments in the first layer may have a first radius of curvature RC1, and the antenna segments in the second layer may have a radius of curvature corresponding to the first radius of curvature RC1.

[0176] Here, the second plane P2 may refer to a virtual plane that is perpendicular to the central axis CA or that meets the central axis CA at one point, or may refer to a plane that is parallel to the first plane P1.

[0177] The antenna segments in the second layer may be arranged to correspond to the antenna segments in the first layer. For example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged in the first to fourth quadrants of the first plane P1, respectively, the ninth to twelfth antenna segments 1310, 1320, 1330, and 1340 can be arranged in the first to fourth quadrants of the second plane P1, respectively.

[0178] The antenna segments of the second layer may extend to a length corresponding to the length of the antenna segments of the first layer. For example, when the first antenna segment 1110 is arranged to extend to a first length, the ninth antenna segment 1310 may extend to the first length. Here, the central angle that the first antenna segment 1110 extending to the first length makes with the central axis CA may correspond to the central angle that the ninth antenna segment 1310 extending to the first length makes with the central axis CA in the second plane P2.

[0179] The distance between the first layer and the second layer may be set based on the parasitic capacitance that may occur between the antenna segments. For example, the distance between the first layer and the second layer may be set to a distance that minimizes the effect of the parasitic capacitance between the first antenna segment 1110 and the ninth antenna segment 1310 when power is applied to the antenna structure 1000. Specifically, the distance between the first layer and the second layer may be set within a range of 0.5 mm to 1.5 mm. In this case, the distance between the first layer and the second layer may be set to a distance that prevents the occurrence of interlayer arc discharge when the plasma system 10 is driven at a specific driving frequency.

[0180] The inductance of the antenna segments in the second layer may be set based on the inductance of the antenna segments in the first layer. For example, the inductance of the ninth antenna segment 1310 may correspond to the inductance of the first antenna segment 1110. In yet another example, the inductance of the ninth antenna segment 1310 may be set to be greater than the inductance of the first antenna segment 1110.

[0181] The antenna structure 1000 configured in a tube shape can be disposed around the plasma generating unit 2000. For example, referring again to Fig. 9, the antenna segments may be disposed around the plasma generating unit 2000. Specifically, the first to fourth antenna segments 1110, 1120, 1130, 1140 and the ninth to twelfth antenna segments 1310, 1320, 1330, 1340 may be disposed so as to be in contact with the plasma generating unit 2000.

[0182] The antenna structure 1000 configured in a tube shape may include auxiliary capacitive elements. For example, referring again to FIG. 9, the first to third auxiliary capacitive elements 1711, 1712, and 1713 may be arranged between the first to fourth antenna segments 1110, 1120, 1130, and 1140 in the first layer of the antenna structure 1000. The first auxiliary capacitive element 1711 may be arranged between the first antenna segment 1110 and the second antenna segment 1120. The second auxiliary capacitive element 1712 may be arranged between the second antenna segment 1120 and the third antenna segment 1130. The third auxiliary capacitive element 1713 may be arranged between the third antenna segment 1130 and the fourth antenna segment 1140. The seventh to ninth auxiliary capacitive elements 1751, 1752, and 1753 may be arranged between the ninth to twelfth antenna segments 1310, 1320, 1330, and 1340 in the second layer of the antenna structure 1000. The seventh auxiliary capacitive element 1751 may be arranged between the ninth antenna segment 1310 and the tenth antenna segment 1320. The eighth auxiliary capacitive element 1752 may be arranged between the tenth antenna segment 1320 and the eleventh antenna segment 1330. The ninth auxiliary capacitive element 1753 may be arranged between the eleventh antenna segment 1330 and the twelfth antenna segment 1340.

[0183] Here, the seventh auxiliary capacitive element 1751 may be arranged so as to be adjacent to the eighth auxiliary capacitive element 1752 in the arc direction and adjacent to the first auxiliary capacitive element 1711 in the direction parallel to the central axis CA. The eighth auxiliary capacitive element 1752 may be arranged so as to be adjacent to the seventh auxiliary capacitive element 1751 and the ninth auxiliary capacitive element 1753 in the arc direction and adjacent to the second auxiliary capacitive element 1712 in the direction parallel to the central axis CA. The ninth auxiliary capacitive element 1753 may be arranged so as to be adjacent to the eighth auxiliary capacitive element 1752 in the arc direction and adjacent to the third auxiliary capacitive element 1713 in the direction parallel to the central axis CA.

[0184] The auxiliary capacitive elements may be arranged to have a predetermined positional relationship between the layers. For example, referring again to FIG. 9, at least two of the first to third auxiliary capacitive elements 1711, 1712, 1713 and the seventh to ninth auxiliary capacitive elements 1751, 1752, 1753 may be arranged on a virtual line parallel to the central axis CA. Specifically, a virtual extension line connecting the first auxiliary capacitive element 1711 and the seventh auxiliary capacitive element 1751 may be parallel to the central axis CA. In yet another example, the auxiliary capacitive elements of the first layer and the auxiliary capacitive elements of the second layer may be arranged at positions corresponding to each other. Specifically, a virtual extension line connecting any one of the first to third auxiliary capacitive elements 1711, 1712, 1713 and any one of the seventh to ninth auxiliary capacitive elements 1751, 1752, 1753, and a virtual extension line connecting any other one of the first to third auxiliary capacitive elements 1711, 1712, 1713 and any other one of the seventh to ninth auxiliary capacitive elements 1751, 1752, 1753 may be located at a position that intersects or twists on the central axis CA or within a predetermined region from the central axis CA.

[0185] The auxiliary capacitive element may be attached to or spaced apart from the plasma generating unit 2000. For example, referring again to FIG. 8, the first auxiliary capacitive element 1711 may be spaced apart from the central axis CA by a first radius of curvature RC1 and may be in contact with the plasma generating unit 2000. In yet another example, the first auxiliary capacitive element 1711 may be spaced apart from the central axis CA by a distance greater than the first radius of curvature RC1 and may not be in contact with the plasma generating unit 2000.

[0186] The auxiliary capacitive element disposed in the antenna structure 1000 configured in a tube shape may include an interlayer capacitive element. For example, referring again to FIG. 9, the first layer and the second layer may be electrically connected in series via the first interlayer capacitive element 1741. Specifically, the first interlayer capacitive element 1741 may connect the fourth antenna segment 1140 constituting the first layer and the ninth antenna segment 1310 constituting the second layer in series. Alternatively, different from that shown in FIG. 9, the first interlayer capacitive element 1741 may connect the first antenna segment 1110 constituting the first layer and the twelfth antenna segment 1340 constituting the second layer in series.

[0187] Here, the interlayer capacitive element may have a different shape or a different connection portion from other auxiliary capacitive elements to connect between layers. For example, one end and the other end of the first interlayer capacitive element 1741 may be located on different planes. Specifically, one end of the first interlayer capacitive element 1741 connected to the fourth antenna segment 1140 of the first layer may be located on the first plane P1, and the other end of the first interlayer capacitive element 1741 connected to the ninth antenna segment 1310 of the second layer may be located on the second plane P2. In yet another example, the first interlayer capacitive element 1741 may include a third connection portion extending from one end of the first interlayer capacitive element 1741 to the fourth antenna segment 1140 and a fourth connection portion extending from the other end of the first interlayer capacitive element 1741 to the ninth antenna segment 1310. At this time, the third connection part and the fourth connection part may include straight or curved conductors and may be attached to or spaced a certain distance from the plasma generating part 2000. At this time, the antenna segment connected to the first interlayer capacitive element 1741 may have a length shorter or longer than the other antenna segments.

[0188] The inclusion of inter-layer capacitive elements in the antenna structure 1000 allows all of the antenna segments within the antenna structure 1000 to be electrically connected.

[0189] The antenna structure 1000 configured in a tube shape can be physically or electrically connected to the RF power source 200 via the main capacitive elements 1500, 1600. For example, referring again to FIG. 9, the first antenna segment 1110 can be electrically connected to the first terminal of the inverter 230 via the first main capacitive element 1500, and the twelfth antenna segment 1340 can be electrically connected to the second terminal of the inverter 230 via the second main capacitive element 1600. Or, the fourth antenna segment 1140 can be electrically connected to the first terminal of the inverter 230 via the first main capacitive element 1500, and the ninth antenna segment 1310 can be electrically connected to the second terminal of the inverter 230 via the second main capacitive element 1600.

[0190] The direction of current flow in the antenna structure 1000 can be determined by the connection method of the main capacitive elements 1500, 1600 and the auxiliary capacitive elements to the antenna segments. For example, referring again to FIG. 9, if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the ninth antenna segment 1310 are connected in series through the first interlayer capacitive element 1741, and the second main capacitive element 1600 is connected in series with the twelfth antenna segment 1340, when power is applied to the antenna structure 1000, current may flow in the same direction (clockwise or counterclockwise) in the first layer and the second layer. In this case, when current flows in the same direction in the first layer and the second layer, the strength of the induced electric field for plasma generation may be increased compared to when current flows in different directions in the first layer and the second layer, and the potential difference between the antenna segments is reduced, thereby reducing the effect of parasitic capacitance.

[0191] The tubularly configured antenna structure 1000 can include antenna segments arranged in multiple turns and multiple layers.

[0192] Referring to FIG. 10, an antenna structure 1000 configured in a tube shape includes first to fourth antenna segments 1110, 1120, 1130, 1140 arranged in a first turn of a first layer, fifth to eighth antenna segments 1210, 1220, 1230, 1240 arranged in a second turn of the first layer, ninth to twelfth antenna segments 1310, 1320, 1330, 1340 arranged in a first turn of a second layer, thirteenth to sixteenth antenna segments 1410, 1420, 1430, 1440 arranged in a second turn of the second layer, primary capacitive elements 1500, 1600, and auxiliary capacitive elements.

[0193] The tubularly configured antenna structure 1000 shown in FIG. 10 may have antenna segments arranged in multiple turns and multiple layers in the same / similar manner as described in FIGS.

[0194] The auxiliary capacitive elements disposed in the above-mentioned multi-turn, multi-layer antenna structure 1000 may include inter-turn capacitive elements and inter-layer capacitive elements. For example, referring again to FIG. 10, the multi-turn, multi-layer antenna structure 1000 may include a first inter-turn capacitive element 1731 connecting turns in a first layer, a second inter-turn capacitive element 1733 connecting turns in a second layer, and a first inter-layer capacitive element 1741 connecting the first and second layers.

[0195] On the other hand, if the antenna segments are arranged in more than two layers in the antenna structure 1000, the antenna structure 1000 may include multiple inter-layer capacitive elements or inter-layer connections.

[0196] Here, the interlayer capacitive elements or interlayer connectors may be arranged to have a preset positional relationship with each other. For example, the interlayer capacitive elements may be arranged rotated at a predetermined angle with respect to the central axis CA. Specifically, the first interlayer capacitive element 1741 connecting the first and second layers may be arranged to have a predetermined angle with the second interlayer capacitive element (not shown) connecting the second and third layers with respect to the central axis CA.

[0197] In addition, the multiple interlayer capacitive elements or interlayer connection parts can connect the antenna segments such that the inter-turn connection area where the turns are connected to each other in each layer has a predetermined angle with respect to the central axis CA. For example, when the fourth antenna segment 1140 of the first turn and the fifth antenna segment 1210 of the second turn are connected via an auxiliary capacitive element in the first layer, the first interlayer capacitive element 1741 can connect the eighth antenna segment 1240 and the tenth antenna segment 1320, and the second inter-turn capacitive element 1733 can connect the ninth antenna segment 1310 and the fourteenth antenna segment 1420. In this case, since the inter-turn connection area is an area where two different turns are connected in each layer, the plasma generating unit 2000 does not come into contact with the antenna segment in the inter-turn connection area, and it may be difficult to obtain a cooling effect by the cooling water flowing in the antenna segment. However, as described above, by forming a predetermined angle at the inter-turn connection area where turns are connected to each other in multiple layers, the area where the plasma generating unit 2000 is not cooled can be distributed differently for each layer.

[0198] In a multi-turn, multi-layer antenna structure 1000, the direction of current flow through each turn on each layer can be determined by the manner in which the primary capacitive elements 1500, 1600 and auxiliary capacitive elements are connected to the antenna segments. For example, referring again to FIG. 10 , if the first primary capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, the eighth antenna segment 1240 and the ninth antenna segment 1310 are connected in series via the first inter-layer capacitive element 1741, the twelfth antenna segment 1340 and the thirteenth antenna segment 1410 are connected in series via the second inter-turn capacitive element 1733, and the second primary capacitive element 1600 is connected in series with the sixteenth antenna segment 1440, when power is applied to the antenna structure 1000, the first turn of the first layer, the second turn of the first layer, the first turn of the second layer, and the second turn of the second layer can carry current in the same direction (clockwise or counterclockwise). In yet another example, if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, the eighth antenna segment 1240 and the thirteenth antenna segment 1410 are connected in series via the first inter-layer capacitive element 1741, the sixteenth antenna segment 1440 and the ninth antenna segment 1310 are connected in series via the second inter-turn capacitive element 1733, and the second main capacitive element 1600 is connected in series with the twelfth antenna segment 1340, when power is applied to the antenna structure 1000, the first turn of the first layer, the second turn of the first layer, the first turn of the second layer, and the second turn of the second layer can carry current in the same direction (clockwise or counterclockwise).

[0199] As described above, when each turn of each layer carries current in the same direction, the strength of the induced electric field for plasma generation can be increased compared to when currents are carried in different directions, and the potential difference between the antenna segments can be reduced, reducing the effects of parasitic capacitance.

[0200] In the above, the main embodiment has been described in which the multi-turn, multi-layer antenna structure 1000 includes four antenna segments per turn, two turns per layer, and is configured in two layers in total. However, the technical ideas of this specification are not limited to this, and the antenna structure 1000 may include p antenna segments per turn, q turns per layer, and be configured in r layers in total (p, q, and r are natural numbers), and it goes without saying that the above content applies in the same / similar manner.

[0201] A case where power is applied to the antenna structure 1000 will be described below with reference to FIGS.

[0202] Meanwhile, for the sake of convenience in the following description, unless otherwise specified, it is assumed that the antenna structure 1000 includes a plurality of antenna segments and auxiliary capacitive elements extending in one direction along an arc from one end to the other end, as shown in Figures 7 to 10, but the technical idea of ​​this specification is not limited to this.

[0203] FIG. 11 is a diagram of an equivalent circuit of an antenna structure 1000 according to one embodiment of the present disclosure.

[0204] Referring to FIG. 11, an equivalent circuit of the antenna structure 1000 may include a circuit in which capacitors and inductors are alternately connected in series.

[0205] The voltage or potential difference at any node in the equivalent circuit of the antenna structure 1000 can be set based on an AC power source or AC signal applied to the antenna structure 1000 from the RF power source 200. For example, when the RF power source 200 applies an AC voltage having an amplitude V to the antenna structure 1000, the potential difference at one node in the antenna structure 1000 can oscillate with an amplitude equal to or less than V.

[0206] Hereinafter, when AC power is applied to the antenna structure 1000, voltages at different positions within the antenna structure 1000 depending on whether or not a capacitive element is present will be described.

[0207] Here, the position-specific voltage may refer to a voltage that is relative to a reference node at a position of an antenna segment in the antenna structure 1000. For example, the position-specific voltage may refer to a voltage that is relative to a reference node at one end, the other end, or a particular node between one end and the other end of each antenna segment at a certain point in time after AC power is applied to the antenna structure 1000.

[0208] Here, the reference node may refer to a point serving as a reference for calculating a voltage for each position. For example, the reference node may include a ground node, a first or second terminal, one or the other end of the RF power source 200, and a point in the antenna structure 1000. For convenience of explanation, the following description assumes that the reference node is one end of the RF power source 200, but the technical idea of ​​the present specification is not limited thereto and may be applied in the same or similar manner even if the reference node is set differently.

[0209] FIG. 12 is a graph showing electrical potential as a function of position within an antenna structure 1000 according to one embodiment of the present disclosure.

[0210] 12, when the antenna segments in the antenna structure 1000 are connected in series without a capacitive element, the antenna segments may have different ranges of voltages at any one time. For example, when the antenna segments are connected in series in the arrangement shown in FIG. 6, voltages of different magnitudes may be applied to the first and fifth antenna segments 1110 and 1210, which are adjacent to each other, as AC power is applied. In this case, the effect of the parasitic capacitance between the first and fifth antenna segments 1110 and 1210 becomes large, which may be undesirable for plasma guidance.

[0211] 12, if the antenna segments in the antenna structure 1000 are connected in series without a capacitive element, voltage distribution by the capacitive element is not possible, and the magnitude of the voltage applied to each of the antenna segments may become large. If the magnitude of the voltage applied to each antenna segment becomes large in this way, unnecessary power consumption occurs, and the plasma system 10 may become unstable.

[0212] FIG. 13 is a graph showing voltage as a function of position within an antenna structure 1000 including a capacitive element according to one embodiment of the present disclosure.

[0213] Referring to FIG. 13, the antenna structure 1000 may include a first node N1 to which the first main capacitive element 1500 and the first antenna segment 1110 are connected, a second node N2 to which the first antenna segment 1110 and the first auxiliary capacitive element 1711 are connected, a third node N3 to which the first auxiliary capacitive element 1711 and the second antenna segment 1120 are connected, a fourth node N4 to which the second antenna segment 1120 and the second auxiliary capacitive element 1712 are connected, a first point Pt1 indicating an arbitrary position within the first antenna segment 1110, and a second point Pt2 indicating an arbitrary position within the second antenna segment 1120.

[0214] Here, FIG. 13 is a graph showing the maximum voltage applied to the antenna segment when AC power is applied to the antenna structure 1000, and the illustrated sign may represent a phase difference. The voltage in FIG. 13 may represent a voltage at a point where a position in the antenna structure 1000 has a maximum voltage. Meanwhile, in an AC waveform, the maximum voltage is divided into a positive value and a negative value, and the graph in FIG. 13 may be interpreted as representing a voltage at a position in the antenna structure 1000 based on a point where the first node N1 has a negative maximum voltage. For example, the first node N1 and the second node N2 having the maximum voltages of -V' and +V' have a maximum voltage of only V', which is an absolute value, and may represent that AC voltages of opposite signs are applied to each other. In other words, it may represent that AC voltages having an amplitude of V' and a phase difference of half a period are applied to the first node N1 and the second node N2. In other words, when a voltage value of -V' is measured across the first node N1, a voltage value of +V' can be measured across the second node N2.

[0215] Referring again to FIG. 13, in the antenna structure 1000, the voltages of the nodes corresponding to each other may correspond to each other. For example, the voltages of the first node N1 and the third node N3 may correspond to each other. Or, the maximum voltages of the first node N1 and the third node N3 may correspond to each other. The voltages of the second node N2 and the fourth node N4 may correspond to each other. Or, the maximum voltages of the second node N2 and the fourth node N4 may correspond to each other. The voltage of one end of the first antenna segment 1110 and the voltage of one end of the second antenna segment 1120 may correspond to each other. The voltage of one end of the first auxiliary capacitive element 1711 and the voltage of one end of the second auxiliary capacitive element 1712 may correspond to each other. The voltage of one end of the first antenna segment 1110 and the voltage of one end of the fifth antenna segment 1210 or the ninth antenna segment 1310 adjacent to the first antenna segment 1110 may correspond to each other.

[0216] Meanwhile, the effective values ​​of the voltages of corresponding nodes may correspond to each other. For example, the effective values ​​of the voltages of the first node N1 and the third node N3, and the effective values ​​of the voltages of the second node N2 and the fourth node N4 may correspond to each other.

[0217] Here, when the voltages of multiple nodes correspond to each other or when multiple nodes have voltages that correspond to each other, it may mean that the multiple nodes have the same voltage or maximum voltage with respect to a reference node, or the difference between the voltages or maximum voltages that the multiple nodes have with respect to the reference node is within a preset range.

[0218] The antenna segments may include points corresponding to each other. For example, a first point Pt1 located between one end and the other end of the first antenna segment 1110 may correspond to a second point Pt1 located between one end and the other end of the second antenna segment 1120. Specifically, the distance by which the first point Pt1 in the first antenna segment 1110 is separated from one end of the first antenna segment 1110 and the distance by which the second point Pt2 is separated from one end of the second antenna segment 1120 may correspond to each other. In another example, the first point Pt1 in the first antenna segment 1110 may correspond to a third point (not shown) in the fifth antenna segment 1210. In this case, the angle between one end of the first antenna segment 1110, the central axis CA, and the first point Pt1 and the angle between one end of the fifth antenna segment 1210, the central axis CA, and the third point may correspond to each other. Specifically, an extension line connecting the first point Pt1 and the third point may cross or be twisted with respect to the central axis CA. In yet another example, the first point Pt1 in the first antenna segment 1110 may correspond to a fourth point (not shown) in the ninth antenna segment 1310. Specifically, an extension line connecting the first point Pt1 and the fourth point may be parallel to or twisted with respect to the central axis CA.

[0219] Corresponding points in the plurality of antenna segments may have corresponding voltages. Or, corresponding points in the plurality of antenna segments may have corresponding effective voltages. In this way, when the antenna segments are adjacent to each other, the effect of parasitic capacitance can be reduced by having corresponding voltages at corresponding points.

[0220] Here, "voltages of a plurality of points correspond to each other" or "a plurality of points have voltages corresponding to each other" may mean that the plurality of points have the same voltage or maximum voltage with respect to a reference node, or that the difference between the voltages or maximum voltages of the plurality of nodes with respect to the reference node is within a preset range. Also, "angles of a plurality of points corresponding to each other between one end of each antenna segment and the central axis CA" may mean that the plurality of points are at positions rotated by the same or different angles from one end of each antenna segment with respect to the central axis CA.

[0221] 13, the magnitude of the voltage at any point in the antenna segment may be smaller than the magnitude of the voltage at the node where the antenna segment and the capacitive element are connected. For example, the maximum voltage of the first point Pt1 and the second point Pt2 may be smaller than the second node N2 or the fourth node N4.

[0222] The voltages at any node or location in the antenna structure 1000 may have different phases or different signs at any time. For example, at one time, the voltages at the first node N1 and the third node N2 may have the same phase, and the first node N1 and the second node N2 may have voltages that are equal in magnitude but opposite in phase or sign to each other. In yet another example, the second node N2 and the third node N3 may have voltages that are equal in magnitude but opposite in phase or sign to each other.

[0223] For ease of explanation, the voltages at nodes and points have been described with reference to a particular antenna segment within the antenna structure 1000, but the technical ideas of this specification are not limited thereto and may be applied in the same / similar manner to each antenna segment within the antenna structure 1000.

[0224] The voltage at each position in the antenna structure 1000 may be reduced as the number of auxiliary capacitive elements included in the antenna structure 1000 increases. Alternatively, the voltage at each position in the antenna structure 1000 may be determined based on the inductance of the antenna segments included in the antenna structure 1000 or the capacitance of the auxiliary capacitive elements. Specifically, unlike that shown in FIG. 13, when an auxiliary capacitive element is disposed between the antenna segments, the magnitude of the voltage applied to each antenna segment is determined to correspond to each other, and the influence of the parasitic capacitance between adjacent antenna segments can be reduced. In addition, when an auxiliary capacitive element is disposed in the antenna structure 1000, the magnitude of the voltage applied to the antenna segments is reduced, the power consumption by the antenna structure 1000 is reduced, and the safety of the plasma system 10 can be improved.

[0225] The main capacitive elements 1500, 1600 can reduce the amplitude of the voltage applied to the antenna structure 1000. Alternatively, the main capacitive elements 1500, 1600 can lower the maximum amplitude of the voltage that can be applied to each antenna segment.

[0226] Alternatively, by connecting the main capacitive elements 1500, 1600 to the antenna segments, the maximum voltage of the nodes in the antenna structure 1000 with respect to the reference node may not be zero. For example, if the main capacitive elements 1500, 1600 are provided with a voltage drop with respect to the reference node, the first through fourth nodes N1, N2, N3, N4 may have a maximum voltage other than zero.

[0227] Alternatively, the main capacitive elements 1500, 1600 can apply voltages of the same amplitude to nodes in the antenna structure 1000. For example, the main capacitive elements 1500, 1600 can cause the first node N1 and the second node N2 to have voltages of the same amplitude relative to a reference node. In yet another example, the main capacitive elements 1500, 1600 can apply voltages of equal amplitude but different signs to the first node N1 and the second node N2. In this manner, the main capacitive elements 1500, 1600 can reduce the voltage or maximum voltage applied to the components in the antenna structure 1000, thereby improving the electrical durability of the antenna structure 1000.

[0228] Meanwhile, when the plasma system 10 is operated, an inductively coupled plasma is induced in the plasma generating unit 2000 by the antenna structure 1000, and the temperature may rise. Accordingly, the plasma generating unit 2000 may be damaged. To prevent this, the antenna structure 1000 includes a cooling water passage to absorb heat from the plasma generating unit 2000. At this time, the degree to which the antenna structure 1000 absorbs the heat generated in the plasma generating unit 2000 may vary depending on the structure and shape of the antenna structure 1000.

[0229] Below, with reference to Figures 14 and 15, we will explain the structure and shape of the antenna structure 1000 for efficiently absorbing heat generated in the plasma generating section 2000 as a result of induction of plasma when operating the plasma system 10 according to one embodiment of this specification.

[0230] FIG. 14 is a diagram of an antenna structure 1000 having a square cross section according to one embodiment of the present disclosure.

[0231] FIG. 15 is a diagram of cross section AA' of an antenna structure 1000 according to one embodiment of the present disclosure.

[0232] 14, the antenna structure 1000 may include a turn antenna, an antenna end, an inter-turn connection portion, and a fastening portion 3400. Specifically, the antenna structure 1000 may include first to third turn antennas 3110, 3120, 3130, first and second antenna ends 3310, 3320, first and second inter-turn connection portions 3210, 3220, and the fastening portion 3400.

[0233] The turn antenna may refer to an antenna that forms one turn in the antenna structure 1000. For example, as shown in FIG. 14, the turn antenna may include first to third turn antennas 3110, 3120, and 3130. Specifically, the first to third turn antennas 3110, 3120, and 3130 may be configured in a circular or annular shape having different radii of curvature based on a central axis CA. More specifically, the second turn antenna 3120 may be arranged so as to wrap around the first turn antenna 3110, and the third turn antenna 3130 may be arranged so as to wrap around the second turn antenna 3120. In this case, the first to third turn antennas 3110, 3120, and 3130 may be arranged on a horizontal axis HA perpendicular to the central axis CA. Alternatively, the first to third turn antennas 3110, 3120, and 3130 may be arranged at different distances from the horizontal axis HA.

[0234] The turn antenna may have a rectangular cross section, although the technical idea of ​​the present specification is not limited thereto, and the cross section of the turn antenna may be a polygon, a circle, an ellipse, or a figure formed of curves and straight lines, in addition to a rectangular shape.

[0235] The turn antenna may be physically or electrically connected to the RF power source 200 via the terminal antenna. For example, the first turn antenna 3110 may be physically or electrically connected to the first antenna terminal 3310, which may be physically or electrically connected to one end of the RF power source 200. Also, for example, the third turn antenna 3130 may be physically or electrically connected to the second antenna terminal 3320, which may be physically or electrically connected to the other end of the RF power source 200.

[0236] The turn antennas may be electrically or physically connected to other turn antennas via inter-turn connections. For example, the first turn antenna 3110 may be electrically or physically connected to one end of the first inter-turn connection portion 3210, and the second turn antenna 3120 may be electrically or physically connected to the other end of the first inter-turn connection portion 3210. Also, for example, the second turn antenna 3120 may be electrically or physically connected to one end of the second inter-turn connection portion 3220, and the third turn antenna 3130 may be electrically or physically connected to the other end of the second inter-turn connection portion 3220.

[0237] The antenna termination may provide a physical or electrical connection between the turn antenna and the RF power source 200 .

[0238] The antenna ends may include conductors extending in any direction. For example, referring again to FIG. 14, the first antenna end 3310 may extend in a direction parallel to the central axis CA, and the second antenna end 3320 may extend in a direction perpendicular to the central axis CA. However, the technical idea of ​​the present specification is not limited thereto, and the first and second antenna ends 3310, 3320 may extend in any direction depending on the inter-turn connection method, etc.

[0239] The turn-to-turn connections can be formed in various shapes. For example, the turn-to-turn connections can have a curved or straight shape. The turn-to-turn connections will be described in detail below.

[0240] The fastening part 3400 can prevent at least a part of the antenna structure 1000 from expanding or deforming. Specifically, the plasma generating part 2000 can expand or deform due to high-temperature thermal energy generated by induction of plasma, and thus the antenna structure 1000 in close contact with the plasma generating part 2000 can also expand or deform, and the fastening part 3400 can prevent such deformation of the antenna structure 1000. For example, referring to FIG. 14 again, the fastening part 3400 having elasticity can be coupled to the first turn antenna 3110 adjacent to the plasma generating part 2000. The antenna structure 1000 can be in close contact with the plasma generating part 2000 by including the fastening part 3400, and can maintain the close contact even when plasma is induced, thereby increasing the efficiency of cooling performed by the antenna structure 1000 described below.

[0241] Here, the fastening part 3400 can provide a fastening force equal to or greater than a preset value to the antenna structure 1000. For example, the fastening part 3400 can include a material having elasticity or resilience. Also, for example, the fastening part 3400 can include a metal having a length shorter than the length of the object to be fastened.

[0242] Meanwhile, the antenna structure 1000 can cool the plasma generating unit 2000 using cooling water. To this end, referring to Fig. 14, the turn antenna in the antenna structure 1000 has a preset shape and can include a cooling water flow path. Specifically, the first to third turn antennas 3110, 3120, and 3130 include first to third cooling water flow paths CFP_1, CFP_2, and CFP_3, respectively, and the first turn antenna 3110 can come into contact with the plasma generating unit 2000 and absorb heat generated in the plasma generating unit 2000 using the cooling water moving through the first to third cooling water flow paths CFP_1, CFP_2, and CFP_3.

[0243] Here, the cooling water may include a fluid having a temperature equal to or lower than a preset temperature.

[0244] The turn antenna may include an inner diameter surface and an outer diameter surface. For example, the first to third turn antennas 3110, 3120, 3130 may include first to third inner diameter surfaces 3111, 3121, 3131 and first to third outer diameter surfaces 3112, 3122, 3132, respectively. Here, the inner diameter surface and the outer diameter surface may be one of a plurality of surfaces forming the turn antenna. Here, the inner diameter surface and the outer diameter surface may mean the inner surface and the outer surface of the turn antenna surrounding the central axis CA. Here, they may mean the facing surfaces arranged in the direction away from the central axis CA in the turn antenna, and the inner diameter surface may be closer to the central axis CA of the antenna structure 1000 than the outer diameter surface. In this case, the cross-sectional shape of the turn antenna may be formed based on at least the inner diameter surface and the outer diameter surface. Meanwhile, the turn antenna may include an upper surface, a lower surface, etc. in addition to the inner diameter surface and the outer diameter surface.

[0245] The cooling water flow path can include surfaces corresponding to the inner diameter surface and the outer diameter surface of the turn antenna. For example, the first cooling water flow path CFP_1 can include a first surface S11 corresponding to the first inner diameter surface 3111 and a second surface S12 corresponding to the first outer diameter surface 3112. Here, the cross-sectional shape of the first cooling water flow path CFP_1 can be formed based on at least the first surface S11 and the second surface S12. As another example, the second cooling water flow path CFP_2 can include a third surface S21 corresponding to the second inner diameter surface 3121 and a fourth surface S22 corresponding to the second outer diameter surface 3122. Here, the cross-sectional shape of the second cooling water flow path CFP_2 can be formed based on at least the third surface S21 and the fourth surface S22. Meanwhile, the cooling water flow path can include an upper surface, a lower surface, etc. in addition to the surfaces corresponding to the inner diameter surface and the outer diameter surface.

[0246] In the above, the cooling water flow path can be interpreted as being defined by the inner surface of the turn antenna. For example, one surface of the cooling water flow path can be interpreted as being substantially the same as the inner surface of the turn antenna. Specifically, the first surface S11 and the second surface S12 of the first cooling water flow path CFP_1 can be interpreted as being the inner surface of the first turn antenna 3110, and the third surface S21 and the fourth surface S22 of the second cooling water flow path CFP_2 can be interpreted as being the inner surface of the second turn antenna 3120.

[0247] The antenna structure 1000 can absorb heat from the plasma generating unit 2000 via the inner diameter surface of the turn antenna that contacts the plasma generating unit 2000 and one surface of the cooling water flow path that corresponds to the inner diameter surface.

[0248] In order to improve the cooling efficiency or to make the heat conduction more active, the antenna structure 1000 may be in surface contact with the plasma generating unit 2000. For example, referring to FIG. 15 again, the first inner diameter surface 3111 of the first turn antenna 3110 is formed parallel to the outer wall or the central axis CA of the plasma generating unit 2000, and the first turn antenna 3110 may be in surface contact with the plasma generating unit 2000 through the first inner diameter surface 3111. At this time, the first surface S11 of the first cooling water flow path CFP_1 corresponding to the first inner diameter surface 3111 is parallel to the first inner diameter surface 3111 and the outer wall or the central axis CA of the plasma generating unit 2000, and the antenna structure 1000 may absorb heat from the plasma generating unit 2000 through the first inner diameter surface 3111 and the first surface S11.

[0249] The cross section of the antenna structure 1000 that enhances the cooling efficiency for the plasma generating part 2000 may be rectangular. For example, referring again to Fig. 15, the cross sections of the first to third turn antennas 3110, 3120, 3130 may be rectangular, and therefore the first to third inner diameter surfaces 3111, 3121, 3131 may be parallel to the first to third outer diameter surfaces 3112, 3122, 3132, respectively. In this case, the cross section of the cooling water flow path may also be rectangular.

[0250] Here, the first inner diameter surface 3111, the first surface S11, the second surface S12, and the first outer diameter surface 3112 may be parallel to one another. Therefore, the distance between the first inner diameter surface 3111 and the first surface S11 may be equal within a certain range from the horizontal axis HA, and the distance between the second surface S12 and the first outer diameter surface 3112 may also be equal within a certain range from the horizontal axis HA.

[0251] Here, the second inner diameter surface 3121 of the second turn antenna 3120 and the third surface S21 of the second cooling water flow path CFP_2 may be parallel to the first outer diameter surface 3112 of the first turn antenna 3110 and the second surface S12 of the first cooling water flow path CFP_1. Therefore, the distance between the second surface S12 and the third surface S21 may be equal within a certain range from the horizontal axis HA.

[0252] On the other hand, if the cross section of the antenna structure 1000 is rectangular, energy loss may occur due to parasitic capacitance between the turn antennas. For example, as shown in Fig. 15, if the first outer diameter surface 3112 of the first turn antenna 3110 and the second inner diameter surface 3121 of the second turn antenna 3120 are parallel to each other, energy loss may occur due to parasitic capacitance.

[0253] Energy loss due to parasitic capacitance between the turn antennas can vary depending on the turn distance between the turn antennas. For example, in FIG. 15, the effect of parasitic capacitance in the antenna structure 1000 can vary depending on the first turn distance TD_1 between the first turn antenna 3110 and the second turn antenna 3120 and the second turn distance TD_2 between the second turn antenna 3120 and the third turn antenna 3130.

[0254] Therefore, the antenna structure 1000 can reduce the influence of parasitic capacitance by setting the inter-turn distance between the turn antennas within a preset range. At this time, the preset range can be set in consideration of the influence of parasitic capacitance and the overall width of the antenna structure 1000. For example, the inter-turn distance may be set within a range of 0.5 mm to 3.5 mm.

[0255] The inter-turn distances may all be the same or different. For example, the first inter-turn distance TD_1 and the second inter-turn distance TD_2 may have the same value within a preset range. In yet another example, the first inter-turn distance TD_1 and the second inter-turn distance TD_2 may have different lengths. For example, the first inter-turn distance TD_1 may have a value larger or smaller than the second inter-turn distance TD_2.

[0256] The above describes a turn antenna having a square cross section in association with the antenna structure 1000 performing a cooling function, and the structure and shape of the antenna structure 1000 that reduces the effects of parasitic capacitance associated therewith.

[0257] Other embodiments of the structure and shape of the antenna structure 1000 that reduces the effect of parasitic capacitance while performing a cooling function will be described below with reference to FIGS.

[0258] FIG. 16 is a diagram of an antenna structure 1000 having a square cross section and a circular cross section according to one embodiment of the present disclosure.

[0259] 17 and 18 are diagrams of cross section AA' of an antenna structure 1000 having at least two different cross-sectional shapes according to one embodiment of the present disclosure.

[0260] 16 and 17, the antenna structure 1000 can include turn antennas having different shapes. For example, the antenna structure 1000 can include a first turn antenna 3110 having a square cross section and second and third turn antennas 3120, 3130 having circular cross sections.

[0261] In the following, unless otherwise stated, the contents regarding the antenna structure 1000 described above with reference to FIG. 14 can be similarly applied.

[0262] The antenna structure 1000 may include a turn antenna in surface contact with the plasma generating unit 2000. For example, the antenna structure 1000 may include a first turn antenna 3110 in surface contact with the plasma generating unit 2000 via a first inner diameter surface 3111.

[0263] The turn antennas in the antenna structure 1000 may have surfaces that are not parallel to each other to reduce the effect of parasitic capacitance between the turn antennas. For example, referring again to FIG. 17, the first inner diameter surface 3111 and the first outer diameter surface 3112 of the first turn antenna 3110 are parallel to the outer wall of the plasma generating section 2000, but the second inner diameter surface 3121 and the second outer diameter surface 3122 of the second turn antenna 3120 may not be parallel to the plasma generating section 2000 and the first inner diameter surface 3111.

[0264] The antenna structure 1000 may include turn antennas having different cross sections to reduce the effect of parasitic capacitance between the turn antennas. For example, referring again to FIG. 17, the antenna structure 1000 may include a first turn antenna 3110 having a rectangular cross section and a second turn antenna 3120 having a circular cross section. In this case, the first coolant flow path CFP_1 may have a rectangular cross section and the second coolant flow path CFP_2 may have a circular cross section corresponding to the first turn antenna 3110 and the second turn antenna 3120, respectively. However, the cross section of the turn antenna is not limited to a rectangular or circular shape, and may be a polygonal shape, a circular shape, an elliptical shape, or a figure shape consisting of curves and straight lines.

[0265] As mentioned above, the effect of parasitic capacitance may be reduced if the antenna structure 1000 includes turned antennas with non-parallel faces or different cross sections.

[0266] Turn antennas having different cross sections have the same inter-turn distance, but the distance between the faces of the turn antennas may not be constant. For example, referring to FIG. 17 again, the first to third turn antennas 3110, 3120, 3130 may be arranged such that the first inter-turn distance TD_1 and the second inter-turn distance TD_2 are equal based on the horizontal axis HA. Also, referring to FIG. 17 again, for example, the distance between the first outer diameter surface 3112 of the first turn antenna 3110 and the first inner diameter surface 3121 of the second turn antenna 3120 may not be constant. Specifically, the distance between the first turn antenna 3110 and the second turn antenna 3120 increases as they move away from each other in the direction parallel to the central axis CA or in the longitudinal direction of the plasma generating unit 2000 based on the horizontal axis HA in FIG. 17, and this may reduce the effect of the parasitic capacitance more than when the distance is constant. Alternatively, when the first turn antenna 3110 and the second turn antenna 3120 are arranged on the same plane, the distance between the first turn antenna 3110 and the second turn antenna 3120 increases as they move away from each other in a direction parallel to the central axis CA or in the longitudinal direction of the plasma generation section 2000 based on the plane, and the effect of parasitic capacitance can be reduced more than when the distance is constant.

[0267] Alternatively, the antenna structure 1000 may include turn antennas that include inner and outer radial surfaces with different shapes to reduce the effect of parasitic capacitance between the turn antennas.

[0268] 18, the first turn antenna 3110 in contact with the plasma generating unit 2000 may include a first inner diameter surface 3111 parallel to the outer wall of the plasma generating unit 2000 and a first outer diameter surface 3112 not parallel to the outer wall of the plasma generating unit 2000. Alternatively, the first turn antenna 3110 may include a first inner diameter surface 3111 parallel to the outer wall of the plasma generating unit 2000 and a first outer diameter surface 3112 curved in a direction away from the central axis CA along the vertical direction. In this case, the first turn antenna 3110 may have a cross section consisting of straight lines and curved lines. Specifically, the first turn antenna 3110 may have a cross section that is a combination of a rectangle and a semicircle, or a semicircle or a semiellipse.

[0269] The antenna structure 1000 including a turn antenna having the inner and outer diameter surfaces or cross sections as described above can efficiently cool the plasma generating section 2000 while effectively reducing energy loss due to parasitic capacitance inside.

[0270] In the above, the structure and shape of the antenna structure 1000 performing the cooling function have been described with a focus on the antenna structure 1000 having three turn antennas, but the technical idea of ​​this specification is not limited thereto and can be applied to the antenna structure 1000 having one or more turn antennas. Furthermore, it goes without saying that the technical idea of ​​this specification can be applied to the antenna structure 1000 having multiple layers, and can be applied to the antenna structure 1000 having the above-mentioned multiple antenna segments.

[0271] The inter-turn connection portion that connects the turn antennas in the antenna structure 1000 will be specifically described below with reference to Figs. 16 and 19 to 22.

[0272] 19 to 22 are diagrams relating to a method of connecting antennas having different cross sections in an antenna structure according to an embodiment of the present specification.

[0273] The inter-turn connection portion may refer to a portion where different turn antennas are connected to each other or a portion that connects different turn antennas. In the following, in order to describe an inter-turn connection portion that connects turn antennas having different cross sections among the inter-turn connection portions, a first inter-turn connection portion 3210 shown in FIG. 15 will be described as a representative example, but the technical idea of ​​the present specification is not limited thereto.

[0274] The first inter-turn connection portion 3210 may be formed to have a bend. For example, referring to Figures 16 and 19, the first turn antenna 3110 and the second turn antenna 3120 may be electrically or physically connected to each other in a bent state.

[0275] The first inter-turn connection portion 3210 may be formed linearly. For example, referring to Figures 20 and 21, the first turn antenna 3110 and the second turn antenna 3120 may be electrically or physically connected on the same straight line.

[0276] The first inter-turn connection part 3210 may include one end connected to the first turn antenna 3110 and the other end connected to the second turn antenna 3120. Here, the one end and the other end of the first inter-turn connection part 3210 may have different cross sections. Specifically, the cross section of one end of the first inter-turn connection part 3210 may have the cross section of the first turn antenna 3110, and the cross section of the other end of the first inter-turn connection part 3210 may have the cross section of the second turn antenna 3120. For example, the cross section of one end of the first inter-turn connection part 3210 may be rectangular, and the cross section of the other end of the first inter-turn connection part 3210 may be circular.

[0277] The first inter-turn connection portion 3210 can be formed by modifying the shape of at least one of the first turn antenna 3110 and the second turn antenna 3120 and connecting them.

[0278] As an example, referring again to FIG. 20, the first inter-turn connection 3210 may be formed by expanding or extending an end of the first turn antenna 3110 and coupling the second turn antenna 3120 thereto.

[0279] Here, the size and shape of the cross section of the first inter-turn connection part 3210 may change from one end to the other end. For example, the cross-sectional area of ​​the first inter-turn connection part 3210 may gradually increase and then decrease from one end to the other end. In yet another example, the cross-sectional area of ​​the first inter-turn connection part 3210 may change from a square shape to a square shape with rounded corners to a circle from one end to the other end.

[0280] As another example, referring again to FIG. 21, the first inter-turn connection 3210 may be formed by coupling an end of the second turn antenna 3120 to an end of the first turn antenna 3110 and expanding or extending the second turn antenna 3120.

[0281] When the first turn antenna 3110 and the second turn antenna 3120 are connected, the cross sections of the first turn antenna 3110 and the second turn antenna 3120 may be set to correspond to each other. For example, the width of the cross section of the first turn antenna 3110 may be set to be the same as or different from the width of the cross section of the second turn antenna 3120. Specifically, the width of the cross section of the first turn antenna 3110 may be larger than the width of the second turn antenna 3120 so that the second turn antenna 3120 can be easily inserted into the first turn antenna 3110. Alternatively, the width of the cross section of the first turn antenna 3110 and the width of the second turn antenna 3120 may be the same, but as shown in FIG. 20 and FIG. 21, any of the turn antennas may be connected to each other by expanding, expanding, contracting, or the like. The size of the cross section of each turn antenna may be set in consideration of the smooth flow of the cooling water.

[0282] The first inter-turn connection part 3210 may be provided in a modular form. For example, referring to FIG. 22, the first inter-turn connection part 3210 may include an insert part having a size corresponding to the cross-sectional size of each of the first turn antenna 3110 and the second turn antenna 3120. In this case, the first turn antenna 3110 and the second turn antenna 3120 are detachable from the first inter-turn connection part 3210. Also, for example, the first inter-turn connection part 3210 may electrically or physically connect the first turn antenna 3110 and the second turn antenna 3120, but may perform a specific function. Specifically, the first inter-turn connection part 3210 may include a capacitive element. In this case, the first inter-turn connection part 3210 may function as the inter-turn capacitive element described above.

[0283] Meanwhile, the shape of the cooling water flow path in the inter-turn connection portion can be deformed. For example, the cooling water flow path in the first inter-turn connection portion 3210 can be gradually narrowed. As yet another example, the cooling water flow path in the first inter-turn connection portion 3210 can be gradually widened. As yet another example, the cooling water flow path in the first inter-turn connection portion 3210 can be gradually widened and then narrowed. In this case, as the shape of the cooling water flow path is deformed, the flow rate of the cooling water can be changed.

[0284] Hereinafter, with reference to FIG. 23, another method for efficiently cooling the heat generated in the plasma generating unit 2000 by plasma induction will be described.

[0285] FIG. 23 is a diagram illustrating a heat transfer member 300 according to one embodiment of the present disclosure.

[0286] 23, the heat transfer member 300 can transfer heat between the antenna structure 1000 and the plasma generating unit 2000. For example, the heat transfer member 300 can absorb heat generated in the plasma generating unit 2000 in response to plasma induction and provide the heat to the antenna structure 1000.

[0287] The heat transfer member 300 may be made of a material with high thermal conductivity, for example, the heat transfer member 300 may be made of at least one of aluminum, gold, silver, tungsten, and / or copper.

[0288] The heat transfer member 300 may have various shapes. For example, the heat transfer member 300 may have a shape corresponding to the plasma generating unit 2000. Specifically, when the plasma generating unit 2000 has a hollow cylindrical shape, the heat transfer member 300 may also be configured in a hollow cylindrical shape. In another example, the heat transfer member 300 may have a shape for surface contact with the outer surface of the plasma generating unit 2000. Specifically, at least a portion of the heat transfer member 300 may be curved or flat. As another example, the heat transfer member 300 may be composed of a plurality of plates that are physically separated. Meanwhile, the shape of the heat transfer member 300 is not limited to the above-mentioned shape. The heat transfer member 300 may have any shape as long as it can be surface-contacted with the plasma generating unit 2000 or the antenna structure 1000 as described later.

[0289] The heat transfer member 300 may be disposed between the antenna structure 1000 and the plasma generating unit 2000. For example, the heat transfer member 300 may be disposed so as to encase the plasma generating unit 2000, and the antenna structure 1000 may be disposed so as to encase the heat transfer member 300. Specifically, the heat transfer member 300 may be disposed so as to be in surface contact with an outer wall of the plasma generating unit 2000 and in surface contact with the innermost turn antenna (e.g., the first turn antenna 3110) of the antenna structure 1000 based on the central axis CA.

[0290] As described above, the plasma generating unit 2000 and the antenna structure 1000 can be thermally coupled via the heat transfer member 300. At this time, since the heat transfer member 300 is made of a material with high thermal conductivity, the heat generated in the plasma generating unit 2000 in response to plasma induction can be transferred more quickly to the antenna structure 1000 via the heat transfer member 300, thereby improving the efficiency of plasma induction and maintenance and improving the durability of the plasma generating unit 2000.

[0291] The above mainly describes the case where the antenna structure 1000 is composed of multiple turn antennas, however, it goes without saying that the technical ideas of this specification are not limited to this and can be similarly applied to the case where the antenna structure 1000 is composed of a single turn antenna, composed of multiple layers of single turn antennas, composed of multiple antenna segments, etc.

[0292] The method according to the embodiment may be realized in the form of program instructions that can be executed via various computer means and recorded on a computer readable medium. The computer readable medium may include, alone or in combination, program instructions, data files, data structures, and the like. The program instructions recorded on the medium may be specially designed and configured for the embodiment, or may be known and available to those skilled in the art of computer software. Examples of computer readable recording media include magnetic media such as hard disks, floppy disks, and magnetic tapes, optical media such as CD-ROMs and DVDs, magneto-optical media such as floptical disks, and hardware devices specially configured to store and execute program instructions, such as ROM, RAM, and flash memory. Examples of program instructions include not only machine language code, such as produced by a compiler, but also high-level language code executable by a computer using an interpreter or the like. The above hardware devices may be configured to operate as one or more software modules to perform the operations of the embodiment, and vice versa.

[0293] Although the embodiments have been described above with reference to limited examples and drawings, those skilled in the art may make various modifications and variations from the above description, for example, the described techniques may be performed in an order different from that described, and / or the components of the described systems, structures, devices, circuits, etc. may be combined or combined in a manner different from that described, and replaced or substituted with other components or equivalents, and still achieve suitable results.

[0294] Accordingly, other configurations, embodiments, and equivalents are intended to fall within the scope of the following claims.

Claims

1. A plasma generating device, comprising: a chamber providing a space in which the plasma is induced; an antenna structure configured to receive RF power to induce a plasma in the chamber and disposed around an outer wall of the chamber; In the antenna structure, a first antenna disposed on a first plane perpendicular to an imaginary central axis of the chamber so as to have a first radius of curvature with respect to the imaginary central axis of the chamber; a second antenna disposed on the first plane so as to have a second radius of curvature with respect to the imaginary central axis of the chamber; a first inter-turn capacitor; a third antenna disposed on a second plane different from the first plane perpendicular to the imaginary central axis of the chamber so as to have the first radius of curvature with respect to the imaginary central axis of the chamber; a fourth antenna disposed on the second plane so as to have the second radius of curvature with respect to the imaginary central axis of the chamber; a second inter-turn capacitor; an interlayer capacitor; the first antenna includes a first antenna segment having the first radius of curvature and a second antenna segment having the first radius of curvature such that the first antenna forms a first turn disposed around the chamber and spaced a first distance from the imaginary central axis of the chamber; the second radius of curvature is greater than the first radius of curvature; the second antenna includes a third antenna segment having the second radius of curvature and a fourth antenna segment having the second radius of curvature such that the second antenna forms a second turn disposed around the chamber and spaced a second distance from the imaginary central axis of the chamber that is longer than the first distance; the first antenna segment is connected in series to the second antenna segment, the third antenna segment is connected in series to the fourth antenna segment, and the second antenna segment is electrically interposed between the first antenna segment and the third antenna segment, such that the first antenna and the second antenna form a first layer disposed on the first plane; the first inter-turn capacitor between the second antenna segment and the third antenna segment is configured to connect the second antenna segment and the third antenna segment in series such that the first turn having the first radius of curvature is connected in series to the second turn having the second radius of curvature via the first inter-turn capacitor; the third antenna includes a fifth antenna segment having the first radius of curvature and a sixth antenna segment having the first radius of curvature such that the third antenna forms a third turn disposed around the chamber and spaced apart from the imaginary central axis of the chamber by the first distance; the fourth antenna includes a seventh antenna segment having the second radius of curvature and an eighth antenna segment having the second radius of curvature such that the fourth antenna forms a fourth turn disposed around the chamber and spaced apart from the imaginary central axis of the chamber by the second distance; the fifth antenna segment is connected in series to the sixth antenna segment, the seventh antenna segment is connected in series to the eighth antenna segment, and the sixth antenna segment is electrically interposed between the fifth antenna segment and the seventh antenna segment, so that the third antenna and the fourth antenna form a second layer disposed on the second plane; the second inter-turn capacitor between the sixth antenna segment and the seventh antenna segment is configured to connect the sixth antenna segment and the seventh antenna segment in series such that the third turn having a first radius of curvature is connected in series to the fourth turn having the second radius of curvature via the second inter-turn capacitor; A plasma generating device, wherein the interlayer capacitor between the fifth antenna segment and the fourth antenna segment is configured to connect the fifth antenna segment and the fourth antenna segment in series so that the first layer is disposed on the first plane and the second layer is disposed on the second plane.

2. The plasma generation device according to claim 1 , wherein the first antenna segment to the eighth antenna segment have the same inductance.

3. a first intra-turn capacitor electrically connecting the first and second antenna segments in series; 2. The plasma generating apparatus of claim 1, further comprising: a second in-turn capacitor electrically connecting the third and fourth antenna segments in series.

4. 4. The plasma generation device according to claim 3, wherein a central angle of a sector formed by the first antenna segment as an arc is equal to a central angle of a sector formed by the third antenna segment as an arc.

5. 4. The plasma generating device of claim 3, wherein the first and second intra-turn capacitors, the first and second inter-turn capacitors, and the interlayer capacitor have the same capacitance.

6. the first antenna segment has a first end, the first end of the first antenna segment electrically connected to one end of the first intra-turn capacitor; The plasma generating device of claim 3 , wherein the second antenna segment has a second end, the second end of the second antenna segment being electrically connected to the other end of the first in-turn capacitor.

7. 7. The plasma generation device of claim 6, wherein when an AC power source is applied to the antenna structure, a maximum voltage of the first end of the first antenna segment relative to a reference node corresponds to a maximum voltage of a third end, different from the second end, of the second antenna segment relative to the reference node.

8. 7. The plasma generation device according to claim 6, wherein when an AC power source is applied to the antenna structure, a voltage from the second end of the second antenna segment to a third end of the second antenna segment that is different from the second end of the second antenna segment corresponds to a voltage from the first end of the first antenna segment to a fourth end of the first antenna segment that is different from the first end of the first antenna segment.

9. 7. The plasma generation device of claim 6, wherein when an AC power source is applied to the antenna structure, a maximum voltage magnitude of the first end of the first antenna segment relative to a reference node corresponds to a maximum voltage magnitude of the second end of the second antenna segment relative to the reference node.

10. 7. The plasma generating apparatus of claim 6, wherein at any time after AC power is applied to the antenna structure, the voltage at the first end of the first antenna segment relative to a reference node and the voltage at the second end of the second antenna segment relative to the reference node have opposite signs.

11. a first point located between the first end and a fourth end different from the first end of the first antenna segment; a second point located between the second end and a third end different from the second end of the second antenna segment; 7. The plasma generating device of claim 6, wherein when an AC power source is applied to the antenna structure, a maximum voltage of the first point with respect to a reference node corresponds to a maximum voltage of the second point with respect to the reference node.

12. 7. The plasma generating device of claim 6, wherein at any time after AC power is applied to the antenna structure, a voltage at the first end of the first antenna segment relative to a reference node and a voltage at the second end of the third antenna segment relative to the reference node correspond to each other.

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