Semiconductor Module

Abstract

The present invention reduces inductance by shortening a wiring path. A semiconductor module (1) comprises: a first circuit board (52) to which one end of a P terminal is electrically connected; a second circuit board (53) to which one end of an M terminal is electrically connected; a third circuit board (54) to which one end of an N terminal is electrically connected; a first semiconductor element (6a) disposed on the upper surface of the first circuit board; a second semiconductor element (6b) disposed on the upper surface of the second circuit board; a first metal wiring board (7) that connects the first semiconductor element to the second circuit board; and a second metal wiring board (9) that connects the second semiconductor element (6b) to the third circuit board. The first metal wiring board is equipped with: a first joint portion that is rectangular in plan view and is joined to the upper surface of a main electrode on the upper side of the first semiconductor element; a second joint portion that is rectangular in plan view and is joined to the upper surface of the second circuit board; and a first coupling portion that couples the first joint portion and the second joint portion. The first joint portion and the second joint portion are arranged so that one side of the first joint portion and one side of the second joint portion face each other in plan view. The first coupling portion couples the side of the first joint portion and the side of the second joint portion which face each other. The second metal wiring board is equipped with: a third joint portion that is rectangular in plan view and is joined to the upper surface of a main electrode on the upper side of the second semiconductor element; a fourth joint portion that is rectangular in plan view and is joined to the upper surface of the third circuit board; and a second coupling portion that couples the third joint portion and the fourth joint portion. The third joint portion and the fourth joint portion are arranged so that one side of the third joint portion and one side of the fourth joint portion face each other in plan view. The second coupling portion couples the side of the third joint portion and the side of the fourth joint portion which face each other.

Description

[Technical field]

[0001] The present invention relates to a semiconductor module. [Background technology]

[0002] 2. Description of the Related Art Semiconductor modules have substrates on which semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), FWDs (Free Wheeling Diodes), etc. are provided, and are used in inverter devices and the like.

[0003] In this type of semiconductor module, as shown in Patent Documents 1-3, for example, four semiconductor chips are arranged in the center of a resin case formed in a frame shape. The four semiconductor chips are arranged on an insulating substrate (which may be called a laminated substrate). A metal wiring plate (which may be called a lead frame) for wiring is arranged on the upper surface electrodes of each semiconductor chip. The metal wiring plate is formed into a predetermined shape, for example, by pressing a metal plate. One end of each metal wiring plate is electrically connected to a circuit pattern on the insulating substrate arranged in the center of the module. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2016 / 174899 [Patent Document 2] International Publication No. 2020 / 071102 [Patent Document 3] International Publication No. 2016 / 084622 Summary of the Invention [Problem to be solved by the invention]

[0005] In the above-mentioned Patent Documents 1 to 3, the main terminals for external connection are arranged on the outer periphery of the resin case. In this case, depending on the shape of the metal wiring board, the current path through which the main current flows may become long, which may cause a problem that the inductance of the entire module becomes large.

[0006] The present invention has been made in view of the above-mentioned points, and an object of the present invention is to provide a semiconductor module capable of reducing inductance by shortening wiring paths. [Means for solving the problem]

[0007] A semiconductor module according to one aspect of the present invention includes a first circuit plate to which one end of a P terminal is electrically connected, a second circuit plate to which one end of an M terminal is electrically connected, a third circuit plate to which one end of an N terminal is electrically connected, a first semiconductor element arranged on an upper surface of the first circuit plate, a second semiconductor element arranged on an upper surface of the second circuit plate, a first metal wiring plate connecting the first semiconductor element and the second circuit plate, and a second metal wiring plate connecting the second semiconductor element and the third circuit plate, wherein the first metal wiring plate has a first bonding portion having a rectangular shape in a plan view joined to an upper surface of a main electrode on the upper surface side of the first semiconductor element, a second bonding portion having a rectangular shape in a plan view joined to an upper surface of the second circuit plate, and a first bonding portion having a rectangular shape in a plan view joined to an upper surface of the second circuit plate. and a first connecting portion connecting the second bonding portion, the first bonding portion and the second bonding portion being arranged so that one side of each of the first bonding portion and the second bonding portion face each other in a planar view, and the first connecting portion connecting the opposing one side of the first bonding portion and one side of the second bonding portion, the second metal wiring plate comprising a third bonding portion having a rectangular shape in a planar view joined to an upper surface of a main electrode on the upper surface side of the second semiconductor element, a fourth bonding portion having a rectangular shape in a planar view joined to an upper surface of the third circuit board, and a second connecting portion connecting the third bonding portion and the fourth bonding portion, the third bonding portion and the fourth bonding portion being arranged so that one side of each of the third bonding portion and the fourth bonding portion face each other in a planar view, and the second connecting portion connecting the opposing one side of the third bonding portion and one side of the fourth bonding portion. Effect of the Invention

[0008] According to the present invention, it is possible to reduce the inductance by shortening the wiring path. [Brief description of the drawings]

[0009] [Figure 1] 1 is a plan view of a semiconductor device according to an embodiment of the present invention; [Diagram 2] FIG. 2 is a plan view in which the sealing resin in FIG. 1 is omitted. [Diagram 3] FIG. 3 is a partial enlarged view of one phase of FIG. 2. [Figure 4] 4 is a cross-sectional view of the semiconductor device shown in FIG. 3 taken along line XX. [Diagram 5] 4 is a cross-sectional view of the semiconductor device shown in FIG. 3 taken along line YY. [Figure 6] 2 is an equivalent circuit diagram for one phase of the semiconductor device according to the present embodiment. FIG. [Figure 7] FIG. 2 is a plan view of a metal wiring board (first metal wiring board) according to the present embodiment. [Figure 8] 5 is a partial enlarged view focusing on a metal wiring board (first metal wiring board) in FIG. 4. FIG. [Figure 9] FIG. 11 is a plan view of another metal wiring board (second metal wiring board) according to the present embodiment. [Figure 10] 6 is a partial enlarged view focusing on a metal wiring board (second metal wiring board) in FIG. 5. FIG. [Figure 11] FIG. 4 is a plan view of FIG. 3, focusing on the periphery of the metal wiring board. [Figure 12] FIG. 13 is a plan view of a metal wiring board according to a modified example. [Figure 13] 1 is a schematic plan view showing an example of a vehicle to which a semiconductor device of the present invention is applied; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] A semiconductor device to which the present invention can be applied will be described below. FIG. 1 is a plan view of a semiconductor device according to this embodiment as viewed from above. FIG. 2 is a plan view in which the sealing resin in FIG. 1 is omitted. FIG. 3 is a partial enlarged view focusing on one phase of FIG. 2. FIG. 4 is a cross-sectional view of the semiconductor device shown in FIG. 3 taken along line XX. FIG. 5 is a cross-sectional view of the semiconductor device shown in FIG. 3 taken along line YY. FIG. 6 is an equivalent circuit diagram of one phase of the semiconductor device according to this embodiment. Note that some components (such as bonding materials and bosses of a metal wiring board) are omitted in FIGS. 4 and 5 for convenience of illustration.

[0011] In the following figures, the longitudinal direction of the semiconductor device (cooler) is defined as the X direction, the short side direction of the semiconductor as the Y direction, and the height direction (thickness direction of the substrate) as the Z direction. The longitudinal direction of the semiconductor device indicates the direction in which multiple wiring boards (or multiple phases) are arranged. The illustrated X, Y, and Z axes are mutually orthogonal and form a right-handed system. In some cases, the X direction may be called the left-right direction, the Y direction as the front-back direction, and the Z direction as the up-down direction. Furthermore, the +Z direction may be called the up direction, and the -Z direction as the down direction. Furthermore, the position on the +Z side may be called the high position, and the position on the -Z side may be called the low position. These directions (front-back, left-right, up-down directions) and heights are terms used for convenience of explanation, and the corresponding relationship with each of the XYZ directions may change depending on the mounting posture of the semiconductor device. For example, the heat dissipation surface side (cooler side) of the semiconductor device is referred to as the bottom side, and the opposite side is referred to as the top side. In this specification, plan view means the case where the top or bottom of the semiconductor device is viewed from the Z direction. In this specification, facing means an arrangement facing each other, and may be not only a 180° relationship but also a relationship of 170° or more and 190° including manufacturing variations. Parallel means not only a 0° relationship between two lines but also a relationship of -10° or more and 10° or less including manufacturing variations. Vertical means not only a 90° relationship between two lines but also a 80° or more and 100° or less including manufacturing variations. The same length, width, and thickness may be within a range of ±10% including manufacturing variations. In addition, the aspect ratios and the size relationships between each member in each drawing are merely schematic diagrams and do not necessarily match. For convenience of explanation, it is assumed that the size relationships between each member are exaggerated.

[0012] A semiconductor device 100 according to this embodiment is applied to a power conversion device such as an inverter for an industrial or vehicle-mounted motor. As shown in Fig. 1 to Fig. 5, the semiconductor device 100 is configured by disposing a semiconductor module 1 on the upper surface of a cooler 10. Note that the cooler 10 may have any configuration relative to the semiconductor module 1.

[0013] The cooler 10 dissipates heat from the semiconductor module 1 to the outside, and is formed in a rectangular shape when viewed from above. The cooler 10 may be formed of a metal with good heat dissipation properties, such as aluminum, an aluminum alloy, copper, or a copper alloy. The cooler 10 includes a top plate 11, a bottom plate 12, and a plurality of fins 13 disposed between the top plate 11 and the bottom plate 12. The top plate 11, the bottom plate 12, and the plurality of fins 13 are integrated by being joined by brazing or the like.

[0014] The semiconductor module 1 includes a plurality of semiconductor units 2 (three in this embodiment), a case 3 that houses the plurality of semiconductor units 2, and a sealing resin 4 that is injected into the case 3.

[0015] The semiconductor unit 2 includes a laminated substrate 5 and semiconductor elements 6a, 6b arranged on the laminated substrate 5. In this embodiment, three semiconductor units 2 are arranged side by side in the X direction. The three semiconductor units 2 constitute, for example, a U phase, a V phase, and a W phase from the negative side in the X direction, and together form a three-phase inverter circuit. The semiconductor units 2 may be called power cells.

[0016] The laminated substrate 5 is, for example, a DCB (Direct Copper Bonding) substrate, an AMB (Active Metal Brazing) substrate, or a metal-based substrate. The laminated substrate 5 is configured by laminating an insulating plate 50, a heat sink 51, and a plurality of circuit boards 52-54, and is formed into a rectangular shape as a whole in a plan view.

[0017] Specifically, the insulating plate 50 is formed of a plate-like body having an upper surface and a lower surface, and has, for example, a rectangular shape in a plan view that is long in the X direction. The insulating plate 50 is made of, for example, aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ) and zirconium oxide (ZrO 2 ) may be formed from a ceramic material.

[0018] The insulating plate 50 may be made of, for example, a thermosetting resin such as an epoxy resin or a polyimide resin, or a composite material in which a thermosetting resin is filled with glass or a ceramic material. The insulating plate 50 is preferably made of a material that is flexible and contains, for example, a thermosetting resin. The insulating plate 50 may be called an insulating layer or an insulating film.

[0019] The heat sink 51 has a predetermined thickness in the Z direction and a rectangular shape in plan view that is long in the Y direction. The heat sink 51 is formed of a metal plate with good thermal conductivity, such as copper or aluminum. The heat sink 51 is disposed on the lower surface of the insulating plate 50. The lower surface of the heat sink 51 is a surface to be attached to the cooler 10 to which the semiconductor module 1 is attached, and also functions as a heat dissipation surface (heat dissipation area) for dissipating heat from the semiconductor module 1. The heat sink 51 is bonded to the upper surface of the cooler 10 via a bonding material (not shown) such as solder. The heat sink 51 may be disposed on the upper surface of the cooler 10 via a thermal conductive material such as thermal grease or thermal compound.

[0020] The multiple circuit boards 52-54 (three in this embodiment) each have a predetermined thickness and are formed in the shape of an electrically independent island (e.g., rectangular in plan view). The three circuit boards 52-54 are arranged at predetermined locations on the upper surface of the insulating plate 50. The shape, number, arrangement, etc. of the circuit boards 52-54 are not limited to these and can be changed as appropriate. These circuit boards 52-54 may be formed from a metal plate with good thermal conductivity, such as copper or aluminum. The circuit boards 52-54 may also be called a wiring board, a circuit layer, a circuit pattern, or a wiring pattern.

[0021] Specifically, circuit board 52 (first circuit board) has a rectangular shape in plan view that is long in the Y direction. Circuit board 52 is disposed on the upper surface of insulating plate 50, offset toward the positive side in the X direction.

[0022] Circuit board 53 (second circuit board) has a rectangular shape in plan view that is long in the Y direction. The length of circuit board 53 in the Y direction is slightly shorter than the length of circuit board 52 in the Y direction. Circuit board 53 is disposed on the upper surface of insulating plate 50, biased toward the negative side in the X direction. That is, circuit boards 52, 53 are disposed side by side in the X direction on the upper surface of insulating plate 50, with circuit board 52 located on the positive side in the X direction and circuit board 53 located on the negative side in the X direction. In addition, the side of circuit board 52 on the negative side in the X direction and the opposing side of circuit board 53 on the positive side in the X direction may be parallel to each other with a predetermined gap therebetween.

[0023] Circuit board 54 (third circuit board) has a rectangular shape in a plan view that is long in the X direction. The length of circuit board 54 in the X direction is approximately the same as the length of circuit board 53 in the X direction. On the upper surface of insulating plate 50, a space is provided at a position on the negative side of circuit board 53 in the Y direction, the space being equal to the width of circuit board 53 in the Y direction, which is shorter than circuit board 54. The above-mentioned circuit board 54 is disposed in the space on insulating plate 50. That is, circuit boards 53, 54 are disposed side by side in the Y direction on the upper surface of insulating plate 50, with circuit board 53 located on the positive side of the Y direction and circuit board 54 located on the negative side of the Y direction. The length (width) of circuit board 54 in the Y direction corresponds to the difference between the lengths of circuit boards 52, 53 in the Y direction. The negative side edge of circuit board 53 in the Y direction and the positive side edge of the opposing circuit board 54 in the Y direction may be parallel to each other with a predetermined gap therebetween.

[0024] These circuit boards 52-54 form part of the wiring path for the main current flowing within the module (main current wiring path).

[0025] The semiconductor element 6a is disposed on the upper surface of the circuit board 52 via a bonding material S such as solder (see FIG. 8). The side of the circuit board 52 on the negative side in the X direction and the side of the semiconductor element 6 on the negative side in the X direction may be arranged parallel to each other with a predetermined gap therebetween. The semiconductor element 6 is disposed on the upper surface of the circuit board 53 via a bonding material S such as solder (see FIG. 10). The side of the circuit board 53 on the positive side in the X direction and the side of the semiconductor element 6 on the positive side in the X direction may be arranged parallel to each other with a predetermined gap therebetween. The side of the circuit board 53 on the negative side in the Y direction and the side of the semiconductor element 6b on the negative side in the Y direction may be arranged parallel to each other with a predetermined gap therebetween. The bonding material S may be any material having electrical conductivity, and may be, for example, solder or a sintered metal material. The semiconductor elements 6a and 6b are formed in a rectangular shape in a plan view by a semiconductor substrate such as silicon (Si).

[0026] In addition, the semiconductor elements 6a and 6b may be composed of wide band gap semiconductor elements (which may also be called wide gap semiconductor elements) formed from a wide band gap semiconductor substrate such as silicon carbide (SiC), gallium nitride (GaN), diamond, etc., in addition to the above-mentioned silicon.

[0027] The semiconductor elements 6a and 6b may be switching elements such as an insulated gate bipolar transistor (IGBT) or a metal oxide semiconductor field effect transistor (power MOSFET). Furthermore, a diode such as a free wheeling diode (FWD) may also be used.

[0028] In this embodiment, the semiconductor elements 6a and 6b are configured by RC (Reverse Conducting)-IGBT elements that integrate the functions of an IGBT (Insulated Gate Bipolar Transistor) element and an FWD (Free Wheeling Diode) element (see FIG. 6, for example).

[0029] The semiconductor elements 6a and 6b are not limited to this, and may be configured by combining the above-mentioned switching elements, diodes, etc. For example, an IGBT element and an FWD element may be configured separately. Also, as the semiconductor element 6, an RB (Reverse Blocking)-IGBT or the like having a sufficient withstand voltage against reverse bias may be used.

[0030] Also, the shape, number, and location of the semiconductor elements 6a and 6b can be changed as appropriate. For example, in this embodiment, two semiconductor elements (one semiconductor element 6a and one semiconductor element 6b) are arranged for each phase. The two semiconductor elements 6a and 6b are connected in series. Also, as shown in FIG. 6, of the two semiconductor elements 6, the semiconductor element 6a (first semiconductor element) arranged on the upper surface of the circuit board 52 (first circuit board) may constitute the upper arm, and the semiconductor element 6b (second semiconductor element) arranged on the upper surface of the other circuit board 53 (second circuit board) may constitute the lower arm. That is, the circuit board 52 constitutes a part of the main current path of the upper arm, and the circuit board 53 constitutes a part of the main current path of the lower arm. As described above, the semiconductor elements 6a and the semiconductor elements 6b may be arranged one by one for each phase. By arranging each one, the wiring path can be further shortened and the inductance can be reduced. Also, the semiconductor elements 6a and the semiconductor elements 6b may be arranged in plural and in the same number. By connecting multiple semiconductor elements 6a in parallel and multiple semiconductor elements 6b in parallel, the module can be made large-capacity. Also, by making the number of semiconductor elements 6a and the number of semiconductor elements 6b the same, the current imbalance between the upper arm and the lower arm can be suppressed.

[0031] The semiconductor element 6a (6b) thus configured is rectangular in plan view, has an upper surface and a lower surface on the XY plane, and an electrode is formed on each surface. For example, a main electrode 60a (60b) and a control electrode 61a (61b) are formed on the upper surface of the semiconductor element 6a (6b), and a main electrode (not shown) is also formed on the lower surface of the semiconductor element 6a (6b). The main electrode 60a (60b) on the upper surface and the main electrode on the lower surface are electrodes through which a main current flows, and are formed in a rectangular shape in plan view having an area that represents most of the upper surface of the semiconductor element 6a (6b). On the other hand, the control electrode 61a (61b) is formed in a rectangular shape in plan view that is sufficiently smaller than the main electrode 60a (60b). For example, in this embodiment, five control electrodes 61a (61b) are formed for one semiconductor element 6a (6b). On the upper surface of the semiconductor element 6a (6b), a main electrode 60a (60b) is formed on one side (the side on the -Y side), and a control electrode 61a (61b) is arranged offset to the other side (the side on the +Y side) that is the opposite side. Note that the arrangement of the electrodes is not limited to this and can be changed as appropriate.

[0032] For example, if the semiconductor elements 6a and 6b are IGBT elements, the main electrode on the upper surface side may be called an emitter electrode, and the main electrode on the lower surface side may be called a collector electrode. Also, if the semiconductor elements 6a and 6b are MOSFET elements, the main electrode on the upper surface side may be called a source electrode, and the main electrode on the lower surface side may be called a drain electrode.

[0033] The control electrodes 61a and 61b may include a gate electrode. The gate electrode is an electrode for controlling a gate for turning on and off a main current. The control electrodes 61a and 61b may include an auxiliary electrode. For example, the auxiliary electrode may be an auxiliary source electrode or an auxiliary emitter electrode that is electrically connected to the main electrode on the upper surface side and serves as a reference potential for the gate potential. The auxiliary electrode may also be a temperature sense electrode that measures the temperature of the semiconductor element. Such electrodes (main electrode 60a and control electrode 61a) formed on the upper surface of the semiconductor element 6a and electrodes (main electrode 60b and control electrode 61b) formed on the upper surface of the semiconductor element 6b may be generally called upper surface electrodes, and the electrodes (main electrodes) formed on the lower surfaces of the semiconductor elements 6a and 6b may be called lower surface electrodes.

[0034] In addition, the semiconductor elements 6a and 6b in this embodiment may be so-called vertical switching elements in which functional elements such as transistors are formed in the thickness direction of a semiconductor substrate, or may be horizontal switching elements in which these functional elements are formed in the planar direction.

[0035] The main electrode on the lower surface of the semiconductor element 6a is joined to the upper surface of the circuit board 52 (first circuit board) via a bonding material S (see FIG. 8). The main electrode on the lower surface of the semiconductor element 6b is joined to the upper surface of the circuit board 53 (second circuit board) via a bonding material S (see FIG. 10). The main electrode 60 on the upper surface of the semiconductor element 6a and the upper surface of the circuit board 53 (second circuit board) are electrically connected by a metal wiring board 7 (first metal wiring board). The main electrode 60 on the upper surface of the semiconductor element 6b (second semiconductor element) and the upper surface of the circuit board 54 (third circuit board) are electrically connected by metal wiring boards 7 and 9. The metal wiring boards 7 and 9 constitute a main current wiring member and function as a part of the path (main current path) of the main current flowing in the semiconductor module 1.

[0036] The metal wiring boards 7 and 9 are formed of a plate-like body having an upper surface and a lower surface. The thickness of the metal wiring board 7 may be 0.1 mm or more and 2.5 mm or less. The metal wiring boards 7 and 9 are formed of metals such as copper, copper alloy, aluminum alloy, iron alloy, etc. The metal wiring board 7 is formed into a predetermined shape, for example, by press processing. The surfaces of the metal wiring boards 7 and 9 may be plated to prevent oxidation and corrosion. Plating can improve adhesion with the resin (a coating layer interposed between the metal wiring board and the sealing resin 4). The shapes of the metal wiring boards 7 and 9 shown below are merely examples and can be changed as appropriate. The metal wiring boards 7 and 9 may also be called lead frames. Hereinafter, the metal wiring boards 7 and 9 will be described separately, but the corresponding configurations are assumed to be common.

[0037] The metal wiring board 7 according to this embodiment has a crank shape in plan view and a crank shape bent multiple times in side view. Specifically, the metal wiring board 7 includes a first joint portion 70, a second joint portion 71, and a connecting portion 72. The first joint portion 70 is connected to the upper surface (main electrode 60) of the semiconductor element 6a via a bonding material S (see FIG. 8, for example). The second joint portion 71 is connected to the upper surface of another wiring board (circuit board 53) via a bonding material S. The bonding material S may be any material having electrical conductivity, and may be, for example, solder or a sintered metal material. The connecting portion 72 (first connecting portion) connects the first joint portion 70 and the second joint portion 71.

[0038] One end of the metal wiring board 7 is connected to the semiconductor element 6 a on the upper arm side, and the other end of the metal wiring board 7 is connected to the upper surface of the circuit board 53 .

[0039] The metal wiring board 9 according to the present embodiment has a crank shape in plan view and a crank shape bent multiple times in side view. Specifically, the metal wiring board 9 includes a third joint 90, a fourth joint 91, and a connecting portion 92. The third joint 90 is connected to the upper surface (main electrode 60) of the semiconductor element 6b via a bonding material S (see FIG. 10, for example). The fourth joint 91 is connected to the upper surface of another wiring board (circuit board 54) via a bonding material S. The bonding material S may be any material having electrical conductivity, and may be, for example, solder or a sintered metal material. The connecting portion 92 (second connecting portion) connects the third joint 90 and the fourth joint 91.

[0040] Moreover, one end of the metal wiring board 9 is connected to the semiconductor element 6b on the lower arm side, and the other end of the metal wiring board 9 is connected to the upper surface of the circuit board 54. The detailed structures of the metal wiring boards 7 and 9 will be described later.

[0041] The shapes, numbers, arrangements, etc. of the metal wiring boards 7 and 9 described above are merely examples, and can be changed as appropriate without being limited thereto. Although details will be described later, in this embodiment, the above-mentioned semiconductor elements 6a and 6b, the metal wiring boards 7 and 9, and main terminals, etc., which will be described later, may form an inverter circuit, for example, as shown in FIG. 6.

[0042] The laminated substrate 5, the semiconductor elements 6a, 6b, and the metal wiring boards 7, 9 are surrounded by the case 3. The case 3 has a rectangular ring-shaped cylinder or frame shape in a plan view. The case 3 is formed of, for example, a thermoplastic resin. Examples of the thermoplastic resin include polyphenylene sulfide (PPS) resin, polybutylene terephthalate (PBT) resin, polybutylene succinate (PBS) resin, polyamide (PA) resin, polyether ether ketone (PEEK) resin, and acrylonitrile butadiene styrene (ABS) resin. The resin may contain an inorganic filler to improve strength and / or functionality. The case 3 is formed by injection molding using such a thermoplastic resin.

[0043] The case 3 is formed in a rectangular frame shape having an opening 3a in the center. More specifically, the case 3 has a pair of side walls 30 facing each other in the X direction and a pair of side walls 31 facing each other in the Y direction, and is formed in a rectangular frame shape by connecting the respective ends. The pair of side walls 31 are longer than the pair of side walls 30.

[0044] The pair of side walls 31 are connected by two partition walls 32 extending in the Y direction. This divides the inner space of the case 3 into three spaces aligned in the X direction. A semiconductor unit 2 and metal wiring boards 7, 9 are housed in each space. That is, the three semiconductor units 2 and metal wiring boards 7, 9 are housed in a space defined by the frame-shaped case 3. The lower end of the case 3 is adhered to the upper surface of the cooler 10 (top plate 11) via an adhesive. The adhesive is preferably, for example, an epoxy-based or silicone-based adhesive.

[0045] The case 3 is provided with main terminals (P terminal 80, N terminal 81, M terminal 82) for external connection and a control terminal 83 for control. Of a pair of side walls 31 facing each other in the short side direction (Y direction) of the case 3, the side wall 31 located on the negative side in the Y direction has recesses 33 and 34 that are rectangular in plan view.

[0046] A P terminal 80 (terminal portion 80a described later) is arranged in recess 33. One P terminal 80 is arranged for each phase. An end portion of P terminal 80 (a tip portion of plate-shaped portion 80b described later) is connected to circuit board 52.

[0047] The P terminal 80 is formed by integrally molding or connecting a terminal portion 80a and a plate-shaped portion 80b. The terminal portion 80a is formed of a square nut of a predetermined thickness. A screw hole 80c is formed in the center of the terminal portion 80a, penetrating in the thickness direction. The terminal portion 80a is provided on one end (base end) side of the plate-shaped portion 80b.

[0048] The plate-shaped portion 80b has a flat plate shape having an upper surface and a lower surface. The plate-shaped portion 80b has an elongated shape that is long in the Y direction in a plan view. The other end (tip) of the plate-shaped portion 80b is electrically connected to the upper surface of the circuit board 52.

[0049] Similarly, N terminals 81 (terminal portions 81a described later) are arranged in the recesses 34. One N terminal 81 is arranged for each phase. An end portion (a tip end of a plate-shaped portion 81b) of the N terminal 81 is connected to the circuit board 54.

[0050] The N terminal 81 is formed by integrally molding or connecting a terminal portion 81a and a plate-shaped portion 81b. The terminal portion 81a is formed of a square nut with a predetermined thickness. A screw hole 81c is formed in the center of the terminal portion 81a, penetrating in the thickness direction. The terminal portion 81a is provided on one end (base end) side of the plate-shaped portion 81b.

[0051] The plate-shaped portion 81b has a flat plate shape having an upper surface and a lower surface. The plate-shaped portion 81b has an elongated shape that is long in the Y direction in a plan view. The other end (tip) of the plate-shaped portion 81b is joined to the upper surface of the circuit board 54 via a joining material (not shown).

[0052] Of a pair of side walls 31 facing each other in the short side direction (Y direction) of case 3, the side wall 31 on the positive side in the Y direction has a recess 35 having a rectangular shape in a plan view. M terminals 82 (terminal portions 82a described below) are arranged in recess 35. One M terminal 82 is arranged for each phase. An end portion of M terminal 82 (a tip end of plate-shaped portion 82b) is connected to circuit board 53.

[0053] The M terminal 82 is formed by integrally molding or connecting a terminal portion 82a and a plate-shaped portion 82b. The terminal portion 82a is formed of a square nut with a predetermined thickness. A screw hole 82c is formed in the center of the terminal portion 82a, penetrating in the thickness direction. The terminal portion 82a is provided on one end (base end) side of the plate-shaped portion 82b.

[0054] The plate-shaped portion 82b has a flat plate shape having an upper surface and a lower surface. The plate-shaped portion 82b has an elongated shape that is long in the Y direction in a plan view. The other end (tip) of the plate-shaped portion 82b is joined to the upper surface of the circuit board 53 via a joining material (not shown).

[0055] The P terminal 80, N terminal 81, and M terminal 82 described above correspond to P, N, and M in FIG. 6. As shown in FIG. 6, the P terminal 80 is electrically connected to the collector electrode (main electrode on the lower surface side) of the semiconductor element 6a (first semiconductor element) constituting the upper arm. The M terminal 82 is electrically connected to the emitter electrode (main electrode on the upper surface side) of the semiconductor element 6a and the collector electrode (main electrode on the lower surface side) of the semiconductor element 6b (second semiconductor element) constituting the lower arm. The N terminal 81 is electrically connected to the emitter electrode (main electrode on the upper surface side) of the semiconductor element 6b. The P terminal 80 may be called a positive terminal (input terminal), the N terminal 81 may be called a negative terminal (input terminal), and the M terminal 82 may be called an intermediate terminal (output terminal). These terminals constitute a metal wiring plate through which a main current flows. One end of the P terminal 80, the N terminal 81, and the M terminal 82 constitute main terminals that can be connected to an external conductor. As described above, one end of each of the P terminal 80, N terminal 81, and M terminal 82 is electrically connected to a predetermined wiring board.

[0056] The ends of the main terminals (P terminal 80, N terminal 81, M terminal 82) may be joined to a predetermined circuit board by laser joining or ultrasonic joining. The ends of the main terminals may be joined to a predetermined circuit board via a joining material. A metal block of a predetermined thickness may be interposed between the ends of the main terminals and the predetermined circuit board. Furthermore, the ends of the main terminals and the predetermined circuit board may be electrically connected to each other by a bonding wire. In other words, it is only necessary that the ends of the main terminals and the predetermined circuit board are electrically connected to each other, and other configurations may be interposed between the ends of the main terminals and the predetermined circuit board.

[0057] These main terminals are formed of a metal material such as copper, copper alloy, aluminum alloy, or iron alloy. Furthermore, a plating film may be formed on the surface of these main terminals. Such a plating film may be, for example, nickel, nickel alloy, tin, or tin alloy. The shape, location, number, and other factors of these terminals are not limited to those described above and can be changed as appropriate.

[0058] A pair of pillars 36 protruding vertically in the Z direction are formed on the upper surface of the side wall on the positive side in the Y direction. The pillars 36 have an elongated shape that is long in the X direction in a plan view along the opening 3a. Two pillars 36 are arranged per phase, and are lined up in the X direction. A step 31a that is one step lower than the upper surface of the side wall 31 is formed on the inside of the pillars 36 (negative side in the Y direction) so as to fit along the opening 3a.

[0059] A plurality of control terminals 83 are embedded in the pillar portion 36. Five control terminals 83 are embedded in each pillar portion 36. One end of the control terminals 83 protrudes from the upper surface of the pillar portion 36 and extends upward in the Z direction. The other end of the control terminal 83 is exposed on the upper surface of the step portion 31a. Five control terminals 83 are arranged per semiconductor element 6, and ten per phase. These control terminals 83 are provided corresponding to the control electrodes 61. Note that the number of control terminals 83 arranged is not limited to this and can be changed as appropriate.

[0060] The control terminal 83 is formed from a metal material such as copper, a copper alloy, an aluminum alloy, or an iron alloy. The control terminal 83 is integrally molded (insert molded) so as to be embedded in the case 3. The control terminal 83 may have a plating film formed on its surface. Such a plating film may be, for example, nickel, a nickel alloy, tin, or a tin alloy. The shape, arrangement, and other aspects of the control terminal 83 are not limited to those described above and can be changed as appropriate.

[0061] Further, a positioning pin 37 extending along the Z direction is provided on the upper surface of the sidewall 30. The positioning pin 37 is provided on the upper surface of the sidewall 30 on the negative side in the X direction, adjacent to the negative side in the X direction of the column portion 36. The positioning pin 37 is also provided on the upper surface of the sidewall 30 on the positive side in the X direction, adjacent to the positive side in the X direction of the column portion 36.

[0062] Furthermore, a plurality of through holes 38 are formed along the outer periphery of the case 3. The through holes 38 penetrate to the cooler 10.

[0063] The corresponding control electrode 61a (61b) and the control terminal 83 are electrically connected by a wiring member W. A conductor wire (bonding wire) is used for the wiring member W. The conductor wire may be made of any one of gold, copper, aluminum, gold alloy, copper alloy, and aluminum alloy, or a combination thereof. It is also possible to use a member other than the conductor wire as the wiring member. For example, a ribbon may be used as the wiring member.

[0064] The internal space defined by the case 3 is filled with sealing resin 4. The sealing resin 4 may be filled up to the upper surface of the case 3 up to the upper end of the case 3. This seals the various components (the three semiconductor units 2, the metal wiring board 7, the terminals, the wiring member W, etc.) arranged inside the case 3.

[0065] The sealing resin 4 may be made of, for example, a thermosetting resin. The sealing resin 4 preferably contains at least one of an epoxy resin, a silicon resin, a phenol resin, and a melamine resin. For example, an epoxy resin mixed with an inorganic filler is suitable for the sealing resin 4 in terms of insulation, heat resistance, and heat dissipation.

[0066] Incidentally, in the semiconductor device 100, a reduction in inductance of the entire module is required from the viewpoint of switching responsiveness. Also, it is assumed that the main wiring functioning as a part of the main current path of the module is formed by a metal wiring plate 7 such as a lead frame.

[0067] In this case, the shape of the metal wiring boards 7 and 9 may affect the length of the main current path of the entire module. In addition, the shape of the metal wiring boards 7 and 9 may also affect the arrangement of the metal wiring boards 7 and 9 when the module is assembled. More specifically, since current tends to flow through the shortest path in the metal wiring board 7, the shape and arrangement of the metal wiring boards 7 and 9 may affect the length of the main current path of the entire module.

[0068] More specifically, when the metal wiring boards 7, 9 are joined, the metal wiring boards 7, 9 are placed on the laminated substrate 5 or the semiconductor elements 6a, 6b in advance. At this time, if the center of gravity of the metal wiring boards 7, 9 is shifted due to the shape of the metal wiring boards 7, 9, the metal wiring boards 7, 9 may be joined on the laminated substrate 5 or the semiconductor elements 6a, 6b in a tilted state. In other words, the stability of the metal wiring boards 7, 9 as a single unit is greatly affected by their postures at the time of joining. The postures of the metal wiring boards 7, 9 at the time of joining not only affect the mechanical strength of the joint portion, but may also affect the output characteristics during operation.

[0069] In this way, the shape of the metal wiring boards 7 and 9 is considered to be one of the important factors that affect not only the electrical characteristics of the entire module but also the mechanical strength.

[0070] The present inventors have therefore focused on the shapes of the metal wiring boards 7 and 9 and the layout of the main current paths (main terminals and wiring patterns) of the entire module, and arrived at the present invention. The specific configuration will be described in detail below.

[0071] First, a detailed structure of the metal wiring board according to the present embodiment will be described with reference to FIG. 3 and FIG. 7 to FIG. 10. FIG. 7 is a plan view of the metal wiring board (first metal wiring board) according to the present embodiment. FIG. 8 is a partial enlarged view focusing on the metal wiring board (first metal wiring board) of FIG. 4. FIG. 9 is a plan view of another metal wiring board (second metal wiring board) according to the present embodiment. FIG. 10 is a partial enlarged view focusing on the metal wiring board (second metal wiring board) of FIG. 5. Note that in FIG. 7 and FIG. 8, the metal wiring board 7 (first metal wiring board) located on the upper arm side (right side of FIG. 3) will be described as an example. In FIG. 9 and FIG. 10, the metal wiring board 9 (second metal wiring board) located on the lower arm side (left side of FIG. 3) will be described as an example.

[0072] 3, 7, and 8, the metal wiring board 7 includes a first joint portion 70, a second joint portion 71, and a connecting portion 72. The connecting portion 72 further includes a first rising portion 72a, a second rising portion 72b, and a horizontal portion 72c.

[0073] The first bonding portion 70 is formed in a rectangular shape smaller than the main electrode 60a of the semiconductor element 6a in a plan view. For example, the first bonding portion 70 has a rectangular shape with a long side in the Y direction and a short side in the X direction. The first bonding portion 70 has an upper surface and a lower surface on the XY plane and includes a plate-like portion having a thickness in the Z direction. The first bonding portion 70 is bonded to the center of the width direction of one side in the X direction of the main electrode 60a on the upper surface side. That is, the side in the X direction of the first bonding portion 70 is formed including the center line in the X direction of the main electrode 60a on the upper surface side. More preferably, the center line Cx in the X direction of the first bonding portion 70 is within a range of 10% of the length in the X direction of the main electrode 60a from the center line in the X direction of the main electrode 60a on the upper surface side. More preferably, the center line in the X direction of the main electrode 60a on the upper surface side and the center line Cx in the X direction of the first bonding portion 70 coincide with each other. The first joint 70 is joined to the center in the width direction of one side in the Y direction of the main electrode 60a on the upper surface side. That is, the side in the Y direction of the first joint 70 is formed including the center line in the Y direction of the main electrode 60a on the upper surface side. More preferably, the center line C1 in the Y direction of the first joint 70 is within a range of 10% of the length in the Y direction of the main electrode 60a from the center line in the Y direction of the main electrode 60a on the upper surface side. Even more preferably, the center line in the Y direction of the main electrode 60a on the upper surface side and the center line C1 in the Y direction of the first joint 70 coincide with each other.

[0074] Furthermore, a plurality of bosses 70a (four in this embodiment) protruding downward are formed on the lower surface of the first bonding portion 70. The bosses 70a are disposed at the four corners of the first bonding portion 70. Furthermore, recesses 70b are formed on the upper surface of the first bonding portion 70 at locations directly above the bosses 70a. The first bonding portion 70 is disposed opposite the upper surface electrode (main electrode 60a) of the semiconductor element 6 in the Z direction and is bonded to the upper surface electrode (main electrode 60a) of the semiconductor element 6 via a bonding material S.

[0075] The upper surface of the first bonding portion 70 may have a roughened surface that is rougher than other portions. Such a roughened surface can be formed by intentionally roughening the surface with, for example, a solvent, a laser, a mold, etc. This roughened surface improves adhesion to the resin as an anchor effect.

[0076] 7, the second joint portion 71 is formed in a rectangular shape having a short side in the X direction and a long side in the Y direction in a plan view. The second joint portion 71 has an upper surface and a lower surface on the XY plane and includes a plate-like portion having a thickness in the Z direction.

[0077] Additionally, a plurality of (two in this embodiment) bosses 71a protruding downward are formed on the lower surface of the second joint portion 71. Two bosses 71a are arranged side by side along the longitudinal direction of the second joint portion 71. Additionally, a recess 71b is formed on the upper surface of the second joint portion 71 at a location directly above the boss 71a. The second joint portion 71 is arranged facing the upper surface of the circuit board 53 in the Z direction and is joined via a bonding material S.

[0078] The first bonding portion 70 and the second bonding portion 71 are arranged so that parts of them face each other in the X direction in a plan view. That is, one side of the first bonding portion 70 and one side of the second bonding portion 71 are arranged parallel to each other with a predetermined distance between them. Furthermore, one side of the first bonding portion 70 and one side of the second bonding portion 71 are arranged so that they face each other obliquely in a plan view. For example, as shown in FIG. 7, the long side of the first bonding portion 70 and the long side of the second bonding portion 71 are arranged parallel to each other with a predetermined distance between them, and part of them face each other.

[0079] The connecting portion 72 (first connecting portion) connects the first joint portion 70 and the second joint portion 71 described above. The connecting portion 72 includes a plate-like portion formed in a gate shape or an arch shape in a side view. Specifically, the connecting portion 72 includes a first rising portion 72a rising upward from one side of the first joint portion 70, a second rising portion 72b rising upward from one side of the second joint portion 71, and a horizontal portion 72c connecting an upper end of the first rising portion 72a and an upper end of the second rising portion 72b. The first rising portion 72a constitutes one end portion of the connecting portion 72, and the second rising portion 72b constitutes the other end portion of the connecting portion 72.

[0080] The first rising portion 72a rises perpendicularly to the first joint 70 from one side of the first joint 70 (for example, one side facing the second joint 71). The first rising portion 72a has a main surface on the YZ plane parallel to the one side of the first joint 70, a side surface on the ZX plane, and includes a plate-like portion having a width in the Y direction and a thickness in the X direction (see FIGS. 7 and 8). The width of the first rising portion 72a is smaller than the width of the first joint 70 to which it is connected (the length of the one side of the first joint 70). The thickness of the first rising portion 72a may be approximately the same as the thickness of the first joint 70. For example, the thickness of the first rising portion 72a may be 80% or more and 120% or less of the thickness of the first joint 70.

[0081] Further, the first rising portion 72a is connected to the center in the width direction of one side of the first joint portion 70. That is, the first rising portion 72a is formed including the center in the width direction of one side of the first joint portion 70. More preferably, the center line C2 in the width direction of the first rising portion 72a is within a range of 10% of the width of one side of the first joint portion 70 from the center line C1 in the width direction of one side of the first joint portion 70. More preferably, as shown in FIG. 7, the center line C2 in the width direction of the first rising portion 72a and the center line C1 in the width direction of one side of the first joint portion 70 coincide with each other. Note that in FIG. 7, the center lines C1 and C2 are slightly shifted in the Y direction for convenience of illustration. That is, in this embodiment, it is not excluded that the center lines C1 and C2 completely coincide with each other.

[0082] The second rising portion 72b rises perpendicularly to the second joint 71 from one side of the second joint 71 (for example, one side facing the first joint 70). The second rising portion 72b has a main surface on the YZ plane parallel to the one side of the second joint 71, a side surface on the ZX plane, and includes a plate-like portion having a width in the Y direction and a thickness in the X direction (see Figs. 7 and 8). The width of the second rising portion 72b is smaller than the width of the connected second joint 71 (the length of the one side of the second joint 71). The thickness of the second rising portion 72b may be approximately the same as the thickness of the second joint 71. For example, the thickness of the second rising portion 72b may be 80% or more and 120% or less of the thickness of the second joint 71.

[0083] Further, the second rising portion 72b is connected to the center in the width direction of one side of the second joint portion 71. That is, the second rising portion 72b is formed including the center in the width direction of one side of the second joint portion 71. More preferably, the center line C4 in the width direction of the second rising portion 72b is within a range of 10% of the width of one side of the second joint portion 71 from the center line C3 in the width direction of one side of the second joint portion 71. More preferably, as shown in FIG. 7, the center line C4 in the width direction of the second rising portion 72b and the center line C4 in the width direction of one side of the second joint portion 71 coincide with each other. In FIG. 7, the center lines C3 and C4 are slightly shifted in the Y direction for convenience of illustration. That is, in this embodiment, it is not excluded that the center lines C3 and C4 completely coincide with each other.

[0084] The first rising portion 72a and the second rising portion 72b are arranged so that some of their faces face each other in the X direction in a plan view. That is, one face of the first rising portion 72a and one face of the second rising portion 72b are arranged parallel to each other at a predetermined distance. Furthermore, one face of the first rising portion 72a and one face of the second rising portion 72b are arranged so that they face each other obliquely in a plan view. For example, as shown in FIG. 7, one face of the first rising portion 72a and one face of the second rising portion 72b are arranged parallel to each other at a predetermined distance, and some of them face each other. In addition, it is preferable that the thickness of the first rising portion 72a and the thickness of the second rising portion 72b are the same.

[0085] Moreover, it is preferable that the height of the upper end of the first rising portion 72a is the same as the height of the upper end of the second rising portion 72b. On the other hand, it is preferable that the lower end of the first rising portion 72a is located higher than the lower end of the second rising portion 72b. That is, the first bonding portion 70 is provided at a higher position (position on the positive side in the Z direction) than the second bonding portion 71. More specifically, it is preferable that the first bonding portion 70 is provided at a higher position than the second bonding portion 71 by the thickness of the semiconductor element 6a.

[0086] The horizontal portion 72c has an upper surface and a lower surface on the XY plane, and includes a plate-like portion having a thickness in the Z direction. The horizontal portion 72c has a crank shape bent twice at a substantially right angle in a plan view. The width of the horizontal portion 72c is preferably the same as that of the first rising portion 72a or the second rising portion 72b.

[0087] More specifically, the horizontal portion 72c includes a first extending portion 72d, a second extending portion 72e, and a third extending portion 72f, as shown in FIG. 7. The first extending portion 72d has a rectangular shape extending in the X direction by a predetermined width from one side of the first joint portion 70 facing the second joint portion 71. The first extending portion 72d is long in the Y direction. The second extending portion 72e is connected to one side of the first extending portion 72d and has a rectangular shape extending in the Y direction by a predetermined width. The second extending portion 72e is long in the Y direction. The third extending portion 72f has a rectangular shape extending in the X direction by a predetermined width from one side of the second joint portion 71 facing the first joint portion 70. The third extending portion 72f is long in the Y direction. The third extending portion 72f is connected to one side of the second extending portion 72e. Furthermore, the horizontal portion 72c (second extending portion 72e) has first extending portions 72d (fillets) formed at edge portions (two corner portions diagonally opposed to each other) in a plan view.

[0088] The thickness of the metal wiring board 7 thus configured is uniform from the first bonding portion 70 to the second bonding portion 71, but is not limited thereto. For example, the thickness of the metal wiring board 7 does not need to be uniform from the first bonding portion 70 to the second bonding portion 71, and may be partially thinner.

[0089] In this embodiment, one end of the connecting portion 72 is connected to the center in the width direction of one side of the first joint portion 70, and the other end of the connecting portion 72 is connected to the center in the width direction of one side of the second joint portion 71. This causes the center of gravity of the metal wiring board 7 alone to be located near the center of the connecting portion 72 (horizontal portion 72c). This makes it possible to improve the stability of the metal wiring board 7 alone in its self-supporting state, minimize changes in posture during joining, and prevent tilting of the joint.

[0090] The upper electrode (main electrode 60a) of the semiconductor element 6a is also connected to the center in the width direction, which makes it possible to suppress bias in the current in the upper electrode (main electrode 60a) in the width direction (Y direction), and thus to suppress partial overheating of the semiconductor element 6a.

[0091] 7, even if horizontal portion 72c, which is a part of connecting portion 72, is formed in a crank shape in a plan view, the center of gravity can be moved closer to the center of horizontal portion 72c in a plan view. As a result, it is possible to ensure sufficient shape variation of metal wiring board 7.

[0092] As described above, the first joint portion 70 of the metal wiring board 7 is recessed from the upper surface side to form the recessed portion 70b, and the boss 70a is protruded from the lower surface side. The bosses 70a are respectively disposed in positions close to the four corners of the rectangular first joint portion 70 in a plan view. In this way, by forming a plurality of bosses 70a, the first joint portion 70 does not tilt with respect to the upper surface of the semiconductor element 6a in the bonding process of the metal wiring board 7. Therefore, the posture of the metal wiring board 7 (first joint portion 70) can be stabilized.

[0093] Furthermore, by providing the boss 70a on the lower surface of the metal wiring board 7, a gap at least the height of the boss 70a can be secured between the first bonding portion 70 and the semiconductor element 6a. By filling the gap with the bonding material S, the thickness of the bonding material S can be secured. This also makes it possible to secure sufficient bonding strength.

[0094] In addition, a recess 70b is formed on the upper surface of the first bonding portion 70 at a location directly above the boss 70a. As a result, the surface area of ​​the upper surface of the first bonding portion 70 is increased, and it is possible to improve the adhesion (anchor effect) between the upper surface of the first bonding portion 70 and the sealing resin 4. Therefore, it is possible to suppress the progress of peeling of the upper surface of the metal wiring board 7 caused by thermal stress above the semiconductor element 6a.

[0095] A boss 71a protruding downward is also formed on the back surface side of the second joint portion 71. This makes it possible to secure a gap at least the height of the boss 71a between the second joint portion 71 and the opposing circuit board 53. By filling the gap with the joint material S, it is possible to ensure the thickness of the joint material S.

[0096] The metal wiring board 9 on the lower arm side will be described below. The metal wiring board 9 on the lower arm side basically has a common configuration with the metal wiring board 7 on the upper arm side, but differs from the metal wiring board 7 in that the orientation of some components is different.

[0097] 3, 9, and 10, the metal wiring board 9 includes a third joint portion 90, a fourth joint portion 91, and a connecting portion 92. The connecting portion 92 further includes a third rising portion 92a, a fourth rising portion 92b, and a horizontal portion 92c.

[0098] The third joint 90 is formed in a rectangular shape smaller than the main electrode 60b of the semiconductor element 6b in a plan view. For example, the third joint 90 has a rectangular shape with a long side in the Y direction and a short side in the X direction. The third joint 90 has an upper surface and a lower surface on the XY plane and includes a plate-like portion having a thickness in the Z direction. The third joint 90 is joined to the center of the width direction of one side in the Y direction of the main electrode 60b on the upper surface side. That is, the side in the Y direction of the third joint 90 is formed including the center line in the X direction of the main electrode 60b on the upper surface side. More preferably, the center line Cy in the Y direction of the third joint 90 is within a range of 10% of the length in the Y direction of the main electrode 60b from the center line in the Y direction of the main electrode 60b on the upper surface side. More preferably, the center line in the X direction of the main electrode 60b on the upper surface side and the center line Cy in the Y direction of the third joint 90 coincide with each other. Moreover, the third joint 90 is joined to the center in the width direction of one side in the X direction of the main electrode 60b on the upper surface side. That is, the side in the X direction of the third joint 90 is formed including the center line in the X direction of the main electrode 60b on the upper surface side. More preferably, the center line C1 in the X direction of the third joint 90 is within a range of 10% of the length in the X direction of the main electrode 60b from the center line in the X direction of the main electrode 60b on the upper surface side. Even more preferably, the center line in the X direction of the main electrode 60b on the upper surface side and the center line C1 in the X direction of the third joint 90 coincide with each other.

[0099] Furthermore, a plurality of bosses 90a (four in this embodiment) protruding downward are formed on the lower surface of the third joint 90. The bosses 90a are disposed at the four corners of the third joint 90. Furthermore, recesses 90b are formed on the upper surface of the third joint 90 at locations directly above the bosses 90a. The third joint 90 is disposed opposite the upper surface electrode (main electrode 60b) of the semiconductor element 6 in the Z direction and is joined via a bonding material S.

[0100] The upper surface of the third bonding portion 90 may have a roughened surface having a roughness greater than that of other portions. Such a roughened surface can be formed, for example, by intentionally roughening the surface with a solvent, a laser, a mold, or the like. This roughened surface improves adhesion to the resin as an anchor effect.

[0101] 9, the fourth joint portion 91 is formed in a rectangular shape having a short side in the Y direction and a long side in the X direction in a plan view. The fourth joint portion 91 has an upper surface and a lower surface on the XY plane and includes a plate-like portion having a thickness in the Z direction.

[0102] Additionally, a plurality of (two in this embodiment) bosses 91a protruding downward are formed on the lower surface of the fourth joint portion 91. Two bosses 91a are arranged side by side along the longitudinal direction of the fourth joint portion 91. Additionally, a recess 91b is formed on the upper surface of the fourth joint portion 91 at a location directly above the boss 91a. The fourth joint portion 91 is arranged facing the upper surface of the circuit board 54 in the Z direction and is joined via a bonding material S.

[0103] The third bonding portion 90 and the fourth bonding portion 91 are arranged so that parts of them face each other in the Y direction in a plan view. That is, one side of the third bonding portion 90 and one side of the fourth bonding portion 91 are arranged parallel to each other with a predetermined distance between them. Furthermore, one side of the third bonding portion 90 and one side of the fourth bonding portion 91 are arranged so that they face each other obliquely in a plan view. For example, as shown in FIG. 9, the long side of the third bonding portion 90 and the long side of the fourth bonding portion 91 are arranged parallel to each other with a predetermined distance between them, and part of them face each other.

[0104] The connecting portion 92 (second connecting portion) connects the third joint portion 90 and the fourth joint portion 91 described above. The connecting portion 92 includes a plate-like portion formed in a gate shape or an arch shape in a side view. Specifically, the connecting portion 92 includes a third rising portion 92a rising upward from one side of the third joint portion 90, a fourth rising portion 92b rising upward from one side of the fourth joint portion 91, and a horizontal portion 92c connecting an upper end of the third rising portion 92a and an upper end of the fourth rising portion 92b. The third rising portion 92a constitutes one end portion of the connecting portion 92, and the fourth rising portion 92b constitutes the other end portion of the connecting portion 92.

[0105] The third rising portion 92a rises perpendicularly to the third joint 90 from one side of the third joint 90 (for example, one side facing the fourth joint 91). The third rising portion 92a has a main surface on the ZX plane parallel to the one side of the third joint 90, a side surface on the YZ plane, and includes a plate-like portion having a width in the X direction and a thickness in the Y direction (see Figs. 9 and 10). The width of the third rising portion 92a is smaller than the width of the connected third joint 90 (the length of the one side of the third joint 90). The thickness of the third rising portion 92a may be approximately the same as the thickness of the third joint 90. For example, the thickness of the third rising portion 92a may be 80% or more and 120% or less of the thickness of the third joint 90.

[0106] Further, the third rising portion 92a is connected to the center in the width direction of one side of the third joint portion 90. That is, the third rising portion 92a is formed including the center in the width direction of one side of the third joint portion 90. More preferably, the center line C2 in the width direction of the third rising portion 92a is within a range of 10% of the width of one side of the third joint portion 90 from the center line C1 in the width direction of one side of the third joint portion 90. More preferably, as shown in FIG. 9, the center line C2 in the width direction of the third rising portion 92a and the center line C1 in the width direction of one side of the third joint portion 90 coincide with each other. Note that in FIG. 9, the center lines C1 and C2 are slightly shifted in the Y direction for convenience of illustration. That is, in this embodiment, it is not excluded that the center lines C1 and C2 completely coincide with each other.

[0107] The fourth rising portion 92b rises perpendicularly to the fourth joint 91 from one side of the fourth joint 91 (for example, one side facing the third joint 90). The fourth rising portion 92b has a main surface on the ZX plane parallel to the one side of the fourth joint 91, a side surface on the YZ plane, and includes a plate-like portion having a width in the X direction and a thickness in the Y direction (see Figs. 9 and 10). The width of the fourth rising portion 92b is smaller than the width of the fourth joint 91 to which it is connected (the length of the one side of the fourth joint 91). The thickness of the fourth rising portion 92b may be approximately the same as the thickness of the fourth joint 91. For example, the thickness of the fourth rising portion 92b may be 80% or more and 120% or less of the thickness of the fourth joint 91.

[0108] Further, the fourth rising portion 92b is connected to the center in the width direction of one side of the fourth joint portion 91. That is, the fourth rising portion 92b is formed including the center in the width direction of one side of the fourth joint portion 91. More preferably, the center line C4 in the width direction of the fourth rising portion 92b is within a range of 10% of the width of one side of the fourth joint portion 91 from the center line C3 in the width direction of one side of the fourth joint portion 91. More preferably, as shown in FIG. 9, the center line C4 in the width direction of the fourth rising portion 92b and the center line C4 in the width direction of one side of the fourth joint portion 91 coincide with each other. Note that in FIG. 9, the center lines C3 and C4 are slightly shifted in the Y direction for convenience of illustration. That is, in this embodiment, it is not excluded that the center lines C3 and C4 completely coincide with each other.

[0109] The third rising portion 92a and the fourth rising portion 92b are arranged so that some of their faces face each other in the Y direction in a plan view. That is, one face of the third rising portion 92a and one face of the fourth rising portion 92b are arranged parallel to each other at a predetermined distance. Furthermore, one face of the third rising portion 92a and one face of the fourth rising portion 92b are arranged so as to face each other obliquely in a plan view. For example, as shown in FIG. 9, one face of the third rising portion 92a and one face of the fourth rising portion 92b are arranged parallel to each other at a predetermined distance, and some of them face each other. In addition, it is preferable that the thickness of the third rising portion 92a and the thickness of the fourth rising portion 92b are the same.

[0110] Moreover, it is preferable that the height of the upper end of the third rising portion 92a is the same as the height of the upper end of the fourth rising portion 92b. On the other hand, it is preferable that the lower end of the third rising portion 92a is located higher than the lower end of the fourth rising portion 92b. That is, the third bonding portion 90 is provided at a higher position (position on the positive side in the Z direction) than the fourth bonding portion 91. More specifically, it is preferable that the third bonding portion 90 is provided at a higher position than the fourth bonding portion 91 by the thickness of the semiconductor element 6b.

[0111] The horizontal portion 92c has an upper surface and a lower surface on the XY plane, and includes a plate-like portion having a thickness in the Z direction. The horizontal portion 92c has a crank shape bent twice at a substantially right angle in a plan view. The width of the horizontal portion 92c is preferably the same as that of the third rising portion 92a or the fourth rising portion 92b.

[0112] More specifically, the horizontal portion 92c includes a first extending portion 92d, a second extending portion 92e, and a third extending portion 92f, as shown in FIG. 9. The first extending portion 92d has a rectangular shape extending in the Y direction by a predetermined width from one side of the third joint portion 90 facing the fourth joint portion 91. The first extending portion 92d is long in the X direction. The second extending portion 92e is connected to one side of the first extending portion 92d and has a rectangular shape extending in the X direction by a predetermined width. The second extending portion 92e is long in the X direction. The third extending portion 92f has a rectangular shape extending in the Y direction by a predetermined width from one side of the fourth joint portion 91 facing the third joint portion 90. The third extending portion 92f is long in the X direction. The third extending portion 92f is connected to one side of the second extending portion 92e. Moreover, the horizontal portion 92c (second extending portion 92e) has first extending portions 92d (fillets) formed at edge portions (two corner portions diagonally opposed to each other) in a plan view.

[0113] The thickness of the metal wiring board 9 thus configured is uniform from the third bonding portion 90 to the fourth bonding portion 91, but is not limited to this. For example, the thickness of the metal wiring board 9 does not need to be uniform from the third bonding portion 90 to the fourth bonding portion 91, and may be partially thinner.

[0114] In this embodiment, one end of the connecting portion 92 is connected to the center in the width direction of one side of the third joint portion 90, and the other end of the connecting portion 92 is connected to the center in the width direction of one side of the fourth joint portion 91. This causes the center of gravity of the metal wiring board 9 alone to be located near the center of the connecting portion 92 (horizontal portion 92c). This makes it possible to improve the stability of the metal wiring board 9 alone in its self-supporting state, minimize changes in posture during joining, and prevent tilting of the joint.

[0115] The upper electrode (main electrode 60b) of the semiconductor element 6b is also connected to the center in the width direction. Therefore, it is possible to suppress bias in the current in the upper electrode (main electrode 60b) in the width direction (Y direction), and to suppress partial overheating of the semiconductor element 6b.

[0116] 9, even if a horizontal portion 92c, which is a part of the connecting portion 92, is formed in a crank shape in a plan view, the center of gravity can be moved closer to the center of the horizontal portion 92c in a plan view. As a result, it is possible to ensure sufficient shape variation of the metal wiring board 9.

[0117] As described above, the third joint 90 of the metal wiring board 9 is recessed from the upper surface side to form the recess 90b, and the boss 90a protrudes from the lower surface side. The bosses 90a are respectively disposed in positions close to the four corners of the rectangular third joint 90 in a plan view. In this way, by forming a plurality of bosses 90a, the third joint 90 does not tilt with respect to the upper surface of the semiconductor element 6b in the bonding process of the metal wiring board 9. Therefore, the posture of the metal wiring board 9 (third joint 90) can be stabilized.

[0118] Furthermore, by providing the boss 90a on the lower surface of the metal wiring board 9, a gap at least the height of the boss 90a can be secured between the third joint 90 and the semiconductor element 6b. By filling the gap with the bonding material S, the thickness of the bonding material S can be secured. This also makes it possible to secure sufficient bonding strength.

[0119] In addition, a recess 90b is formed on the upper surface of the third bonding portion 90 at a location directly above the boss 90a. As a result, the surface area of ​​the upper surface of the third bonding portion 90 is increased, and it is possible to improve the adhesion (anchor effect) between the upper surface of the third bonding portion 90 and the sealing resin 4. Therefore, it is possible to suppress the progress of peeling of the upper surface of the metal wiring board 9 caused by thermal stress above the semiconductor element 6b.

[0120] A boss 91a protruding downward is also formed on the back surface side of the fourth joint portion 91. This makes it possible to secure a gap at least the height of the boss 91a between the fourth joint portion 91 and the opposing circuit board 54. By filling the gap with the joint material S, it is possible to ensure the thickness of the joint material S.

[0121] Such metal wiring boards 7 and 9 can stabilize the center of gravity when placed. As shown in Fig. 7 and Fig. 9, the widths of predetermined portions constituting the metal wiring boards 7 and 9 are D1, D2, and D3.

[0122] Here, by widening D2 while maintaining the relationship of D1>D2 and D3>D2, the area of ​​the connecting parts 72, 92 is increased, and the stability of the center of gravity is improved. In addition, by widening D3 within a range that does not affect the structural dimensions and manufacturing dimensions of other components, the contact surface with the circuit board can be widened, further improving stability. In addition to stabilizing the center of gravity, widening D3 also allows the connecting parts 72, 92 to dissipate heat efficiently below the laminated substrate 5.

[0123] Moreover, by widening D2, the output characteristics can be further improved. When the same current is passed, the cross-sectional area of ​​the connecting parts 72, 92 can be made larger when D2 is widened, and heat generation can be reduced, that is, the allowable current can be increased. Furthermore, by widening D2 while maintaining the length of the metal wiring boards 7, 9, the cross-sectional area of ​​the current path can be widened, and the inductance can be reduced. In other words, D2 can be widened to the extent that it does not affect the reliability tolerance.

[0124] In addition to the above-mentioned effects, the following effects can be expected: Fig. 11 is a plan view of Fig. 3, focusing on the periphery of the metal wiring board.

[0125] In the semiconductor module 1, in order to improve adhesion between the semiconductor unit 2 and the case 3 and the sealing resin 4, a coating layer is applied to the internal members to improve adhesion with the resin. The coating layer may contain at least one of polyimide and polyamide. The coating layer is applied by, for example, a spray method.

[0126] In this embodiment, the connecting parts 72, 92 of the metal wiring boards 7, 9 are formed in a crank shape, so that the area of ​​the connecting parts (horizontal parts) can be reduced. This makes it possible to properly apply the coating layer to the components (laminated substrate 5 or semiconductor elements 6a, 6b) located directly below the metal wiring boards 7, 9. Specifically, the coating layer can also be properly applied to the region R in FIG. 11. The region R is a rectangular region located near the corner (fillet) of the crank shape of the horizontal part. Since the vicinity of the fillet is a place where resin peeling is likely to occur, by applying the coating layer to the region R, the coating layer can also be easily applied to the surfaces of the laminated substrate 5 and the semiconductor elements 6a, 6b around the metal wiring boards 7, 9. This improves the adhesion between the sealing resin 4 and its surrounding members, and improves the insulation and reliability tolerance.

[0127] Next, a description will be given of the layout around the metal wiring boards 7 and 9. As shown in Fig. 3 and Fig. 7 to Fig. 10, circuit boards 52 and 53 are arranged side by side in the X direction. Moreover, circuit boards 53 and 54 are arranged side by side in the Y direction that intersects with the X direction.

[0128] Moreover, the P terminal 80 and the N terminal 81 are arranged side by side in the X direction. The M terminal 82 is arranged to face the N terminal 81 across the circuit boards 53, 54. More specifically, the M terminal 82 is arranged to face the N terminal 81 across the second joint portion 71 on the upper arm side.

[0129] As described above, the first joint 70 and the second joint 71 on the upper arm side are disposed so that one side of each of them faces each other in a plan view. Furthermore, the connecting portion 72 on the upper arm side connects one side of the first joint 70 and one side of the second joint 71 that face each other.

[0130] In this way, by connecting the opposing sides with connecting portion 72, it is possible to shorten the main current path between semiconductor element 6 on the upper arm side and circuit board 53, as shown in Figures 3 and 7.

[0131] Similarly, the first joint 70 and the second joint 71 on the lower arm side are arranged such that one side of each joint faces each other in a plan view. Also, the connecting portion 72 on the lower arm side connects one side of the first joint 70 and one side of the second joint 71 that face each other.

[0132] In this way, even on the lower arm side, by connecting the opposing sides with the connecting portion 72, it is possible to shorten the main current path between the semiconductor element 6 and the circuit board 54. This makes it possible to reduce the inductance of the entire module.

[0133] Furthermore, by forming the horizontal portion 72c of both the upper and lower arms into a crank shape in plan view, it is possible to adjust the main current path while maintaining the center of gravity at a stable position according to the shapes and layout of the surrounding main terminals (P terminal 80, N terminal 81, M terminal 82) and the circuit boards 52-54. As a result, it is possible to increase product variations according to the layout. For example, it is preferable that the semiconductor element 6a and the metal wiring board 7 on the upper arm side are arranged biased toward the P terminal 80 side (negative side in the Y direction), and the fourth joint portion 91 of the metal wiring board 9 on the lower arm side is arranged close to the N terminal 81.

[0134] As described above, according to this embodiment, it is possible to stabilize the center of gravity of the metal wiring board 7, prevent stress concentration at the interface with the metal wiring board after sealing, and prevent deviation of the main current path. It is also possible to shorten the main current path and obtain an effect of reducing inductance. Furthermore, it becomes easy to adjust the layout of various components in the module, and it becomes easy to change the chip size and to change the design of the components according to product variations.

[0135] In the above embodiment, the metal wiring board (connecting portion) has a crank shape in plan view, but is not limited to this configuration. For example, the configuration shown in FIG. 12 is also possible. FIG. 12 is a plan view of a metal wiring board according to a modified example. Note that, in FIG. 12, the metal wiring board 7 is used as an example for description, but a similar shape can also be applied to the metal wiring board 9. As shown in FIG. 12, in the metal wiring board 7 according to the modified example, the connecting portion 72 (horizontal portion 72c) is formed as a long body extending obliquely in plan view. According to this configuration, the horizontal portion 72c is formed linearly, so that the wiring path can be further shortened, and therefore, it is possible to obtain a greater inductance reduction effect.

[0136] A vehicle to which the present invention is applied will be described with reference to Fig. 13. Fig. 13 is a schematic plan view showing an example of a vehicle to which the semiconductor device of the present invention is applied. Vehicle 101 shown in Fig. 13 is, for example, a four-wheeled vehicle equipped with four wheels 102. Vehicle 101 may be, for example, an electric vehicle in which the wheels are driven by a motor or the like, or a hybrid vehicle that uses power from an internal combustion engine in addition to a motor.

[0137] The vehicle 101 includes a drive unit 103 that applies power to the wheels 102, and a control device 104 that controls the drive unit 103. The drive unit 103 may be composed of at least one of an engine, a motor, and a hybrid of an engine and a motor, for example.

[0138] The control device 104 performs control (for example, power control) of the above-mentioned drive unit 103. The control device 104 includes the above-mentioned semiconductor device 100. The semiconductor device 100 may be configured to perform power control for the drive unit 103.

[0139] In the above embodiment, the number and locations of the semiconductor elements 6a and 6b are not limited to the above configuration and can be changed as appropriate.

[0140] In the above embodiment, the number and layout of the wiring boards are not limited to the above configuration, and can be changed as appropriate.

[0141] In the above embodiment, the laminated substrate 5 and the semiconductor elements 6a and 6b are configured to be rectangular or square in plan view, but are not limited to this configuration. These elements may be configured to be polygonal shapes other than those described above.

[0142] Furthermore, although the present embodiment and modifications have been described, other embodiments may be combinations of the above-described embodiments and modifications in whole or in part.

[0143] In addition, the present embodiment is not limited to the above-mentioned embodiment and modification, and may be modified, substituted, or altered in various ways without departing from the spirit of the technical idea. Furthermore, if the technical idea can be realized in a different way due to technological progress or a different derived technology, it may be implemented using that method. Therefore, the claims cover all embodiments that may be included in the scope of the technical idea.

[0144] The features of the above embodiment are summarized below. The semiconductor module according to the above embodiment includes a first circuit plate to which one end of a P terminal is electrically connected, a second circuit plate to which one end of an M terminal is electrically connected, a third circuit plate to which one end of an N terminal is electrically connected, a first semiconductor element arranged on an upper surface of the first circuit plate, a second semiconductor element arranged on an upper surface of the second circuit plate, a first metal wiring plate connecting the first semiconductor element and the second circuit plate, and a second metal wiring plate connecting the second semiconductor element and the third circuit plate, the first metal wiring plate having a first bonding portion having a rectangular shape in a plan view joined to an upper surface of a main electrode on the upper surface side of the first semiconductor element, a second bonding portion having a rectangular shape in a plan view joined to an upper surface of the second circuit plate, and a first bonding portion having a rectangular shape in a plan view joined to an upper surface of the second circuit plate. the second metal wiring plate comprises a third bonding portion having a rectangular shape in a plan view joined to an upper surface of a main electrode on the upper surface side of the second semiconductor element, a fourth bonding portion having a rectangular shape in a plan view joined to an upper surface of the third circuit board, and a second bonding portion connecting the third bonding portion and the fourth bonding portion, the third bonding portion and the fourth bonding portion being arranged so that one side of the third bonding portion faces each other in a plan view, and the second bonding portion connecting one side of the third bonding portion and one side of the fourth bonding portion being opposed to each other in a plan view.

[0145] In addition, in the semiconductor module according to the above-mentioned embodiment, the first circuit board and the second circuit board are arranged side by side in a predetermined direction, and the second circuit board and the third circuit board are arranged side by side in a direction intersecting the predetermined direction.

[0146] In the semiconductor module according to the above-described embodiment, the first connecting portion extends in the predetermined direction, and the second connecting portion extends in a direction intersecting the predetermined direction.

[0147] In addition, in the semiconductor module according to the above-described embodiment, the first semiconductor element and the second semiconductor element have a main electrode formed on their upper surfaces on one side in a direction intersecting the specified direction, and a control electrode formed on their upper surfaces on the other side.

[0148] In addition, in the semiconductor module of the above-mentioned embodiment, when viewed in a planar view, the second metal wiring plate extends from the upper surface of the second semiconductor element to one side in a direction intersecting the specified direction, and a control wiring extends to the other side in a direction intersecting the specified direction.

[0149] In addition, in the semiconductor module of the above-mentioned embodiment, the direction in which one side of the first joint portion and one side of the second joint portion face each other intersects with the direction in which one side of the third joint portion and one side of the fourth joint portion face each other.

[0150] Furthermore, in the semiconductor module according to the above-described embodiment, the P terminal and the N terminal are arranged side by side in a predetermined direction, the M terminal is arranged to face the N terminal across the second joint portion, and the direction in which the M terminal faces the N terminal is a direction that intersects with the predetermined direction.

[0151] In the semiconductor module according to the above-described embodiment, a control terminal is disposed on the M terminal side.

[0152] In the semiconductor module according to the above-described embodiment, one end of the first connection portion is connected to the center in the width direction of one side of the first joint portion.

[0153] In addition, in the semiconductor module of the above-mentioned embodiment, one side of the first joint portion and one side of the second joint portion are arranged so as to face each other diagonally in a planar view, and the second connecting portion includes a plate-shaped portion having a crank shape in a planar view.

[0154] In the semiconductor module according to the above embodiment, the crank shape of the first coupling portion is bent in a direction (negative side in the Y direction) away from the joint portion between the M terminal and the second circuit board. With this configuration, the joint portion on the M terminal side and the second joint portion on the second circuit board (circuit board 53) can be disposed at a predetermined distance, reducing thermal interference between them and improving the reliability of each joint portion.

[0155] In addition, in the semiconductor module according to the above-described embodiment, the first connecting portion has a first rising portion rising upward from one side of the first joint portion, a second rising portion rising upward from one side of the second joint portion, and a horizontal portion that connects an upper end of the first rising portion and an upper end of the second rising portion and has a crank shape in a planar view.

[0156] In the semiconductor module according to the above-described embodiment, the horizontal portion has a fillet formed at an edge portion in a plan view.

[0157] In the semiconductor module according to the above-described embodiment, the other end of the first connecting portion is connected to the center in the width direction of one side of the second joint portion.

[0158] In the semiconductor module according to the above-described embodiment, one end of the second connecting portion is connected to the center in the width direction of one side of the third joint portion.

[0159] In addition, in the semiconductor module of the above-mentioned embodiment, one side of the third joint portion and one side of the fourth joint portion are arranged so as to face each other diagonally in a planar view, and the second connecting portion includes a plate-shaped portion having a crank shape in a planar view.

[0160] In the semiconductor module according to the above embodiment, the crank shape of the second coupling portion is bent in a direction (negative side in the X direction) away from the joint between the N terminal and the third circuit board. With this configuration, the joint on the N terminal side and the fourth joint on the third circuit board (circuit board 54) can be disposed at a predetermined distance, reducing thermal interference between them and improving the reliability of each joint.

[0161] In addition, the metal wiring board of the above embodiment comprises a first joint portion having a rectangular shape in a planar view that is joined to an upper surface of a main electrode of a semiconductor element, a second joint portion having a rectangular shape in a planar view that is joined to an upper surface of a specified circuit board, and a connecting portion that connects the first joint portion and the second joint portion, and is arranged so that one side of the first joint portion faces one side of the second joint portion, and one end of the connecting portion is connected to the widthwise center of one side of the first joint portion.

[0162] In addition, in the metal wiring board according to the above embodiment, the widthwise centerline of one end of the connecting portion is within a range of 10% of the width of one side of the first joint portion from the widthwise centerline of one side of the first joint portion.

[0163] In the metal wiring board according to the above embodiment, the center line in the width direction of one end of the coupling portion coincides with the center line in the width direction of one side of the first joint portion.

[0164] In addition, in the metal wiring board according to the above embodiment, one side of the first joint portion and one side of the second joint portion are arranged so as to face each other diagonally in a planar view, and the connecting portion includes a plate-shaped portion having a crank shape in a planar view.

[0165] In addition, in the metal wiring board according to the above embodiment, the connecting portion has a first rising portion rising upward from one side of the first joint portion, a second rising portion rising upward from one side of the second joint portion, and a horizontal portion that connects an upper end of the first rising portion and an upper end of the second rising portion and has a crank shape in a planar view.

[0166] In addition, in the metal wiring board according to the above embodiment, the horizontal portion has a first extension portion extending from one side of the first joint portion in a direction perpendicular to the side by a predetermined width, a second extension portion connected to one side of the first extension portion and extending in a direction perpendicular to the first extension portion by a predetermined width, and a third extension portion extending from one side of the second joint portion in a direction perpendicular to the side by a predetermined width and connected to one side of the second extension portion.

[0167] In the metal wiring board according to the above embodiment, the horizontal portion has a fillet formed at an edge portion in a plan view.

[0168] In the metal wiring board according to the above embodiment, the other end of the connecting portion is connected to the center in the width direction of one side of the second joint portion.

[0169] In addition, in the metal wiring board according to the above embodiment, the widthwise center line of the other end of the connecting portion is within a range of 10% of the width of one side of the second joint from the widthwise center line of one side of the second joint.

[0170] In the metal wiring board according to the above embodiment, the center line in the width direction of the other end of the coupling portion coincides with the center line in the width direction of one side of the second joint portion.

[0171] In addition, in the metal wiring board according to the above embodiment, the first joint portion and the second joint portion include a plate-shaped portion having an upper surface and a lower surface, and have a boss formed on the lower surface of the plate-shaped portion and protruding downward, and a recess formed on the upper surface of the plate-shaped portion at a location directly above the boss.

[0172] In the metal wiring board according to the above embodiment, the boss is located on one side of the first joint portion in a width direction and the center line of one end of the connecting portion is located between the bosses in a plan view. With this configuration, the boss is located on the outer side of the joint portion, and the metal wiring board can be stably positioned.

[0173] In the metal wiring board according to the above embodiment, the boss is located on one side and the other side of one side of the first joint in a width direction in a plan view, and one end of the connecting portion is entirely disposed between the bosses. With this configuration, the boss is located on the outer side of the joint, and the metal wiring board can be stably disposed.

[0174] In the metal wiring board according to the above embodiment, the boss is located on one side of the second joint portion in the width direction and the center line of one end of the connecting portion is located between the bosses in a plan view. With this configuration, the boss is located on the outer side of the joint portion, and the metal wiring board can be stably positioned.

[0175] In the metal wiring board according to the above embodiment, the bosses are located on one side and the other side of one side of the second joint in a plan view in a width direction, and one end of the connecting portion is entirely disposed between the bosses. With this configuration, the bosses are positioned on the outer side of the joint, and the metal wiring board can be stably disposed. [Industrial Applicability]

[0176] INDUSTRIAL APPLICABILITY As described above, the present invention has the effect of shortening the wiring path and reducing the inductance, and is particularly useful for semiconductor modules for electrical equipment.

[0177] This application is based on Japanese Patent Application No. 2022-051039, filed on March 28, 2022, the contents of which are incorporated herein in their entirety. [Explanation of symbols]

[0178] 1: Semiconductor module 2: Semiconductor unit 3: Case 3a: opening 4: Sealing resin 5:Laminated substrate 6a: Semiconductor element (first semiconductor element) 6b: Semiconductor element (second semiconductor element) 7: Metal wiring board (first metal wiring board) 9: Metal wiring board (second metal wiring board) 10:Cooler 11: Tabletop 12:Bottom plate 13: Finn 30: Side wall 31: Side wall 31a: Stepped section 32: Partition wall 33: Recess 34: Recess 35: Recess 36:Column part 37: Positioning pin 38:Through hole 50: Insulating plate 51: Heat sink 52: Circuit board (1st circuit board) 53: Circuit board (second circuit board) 54: Circuit board (3rd circuit board) 60a: Main electrode 60b: Main electrode 61a: control electrode 61b: control electrode 70: 1st joint 70a: Boss 70b: recess 71:Second joint 71a: Boss 71b: Recess 72: Connection part (1st connection part) 72a: First rising part 72b: Second rising part 72c:Horizontal part 72d: Fillet 80 :P terminal 80a:Terminal section 80b: Plate-shaped part 80c: Screw hole 81 :N terminal 81a: Terminal part 81b: Plate-shaped part 81c: Screw hole 82 :M terminal 82a: Terminal part 82b: Plate-shaped part 82c: Screw hole 83: Control terminal 90: 3rd joint 90a: Boss 90b: Recess 91: 4th joint 91a: Boss 91b: recess 92: Connection part (second connection part) 92a: 3rd rising part 92b: 4th rising part 92c:Horizontal part 92d: Fillet 100: Semiconductor device 101: Vehicle 102 :Wheel 103: Drive unit 104: Control device S: Bonding material W: Wiring material

Claims

1. a first circuit board to which one end of the P terminal is electrically connected; a second circuit board to which one end of the M terminal is electrically connected; a third circuit board to which one end of the N terminal is electrically connected; a first semiconductor element disposed on an upper surface of the first circuit board; a second semiconductor element disposed on an upper surface of the second circuit board; a first metal wiring plate connecting the first semiconductor element and the second circuit plate; a second metal wiring plate connecting the second semiconductor element and the third circuit plate; The first metal wiring board is a first bonding portion having a rectangular shape in a plan view and bonded to an upper surface of a main electrode on an upper surface side of the first semiconductor element; a second joint portion having a rectangular shape in a plan view and joined to an upper surface of the second circuit board; a first connecting portion connecting the first joint portion and the second joint portion, The first joint portion and the second joint portion are arranged such that one side of each of the first and second joint portions faces each other in a plan view, The first connecting portion connects one side of the first joint portion and one side of the second joint portion that face each other, The second metal wiring board is a third bonding portion having a rectangular shape in a plan view and bonded to an upper surface of a main electrode on an upper surface side of the second semiconductor element; a fourth joint portion having a rectangular shape in a plan view and joined to an upper surface of the third circuit board; A second connecting portion connecting the third joint portion and the fourth joint portion, the third joint portion and the fourth joint portion are arranged such that one side of each of the third joint portion and the fourth joint portion faces each other in a plan view, The second connecting portion connects one side of the third joint portion and one side of the fourth joint portion that face each other, The first circuit board and the second circuit board are arranged side by side in a predetermined direction, the second circuit board and the third circuit board are arranged side by side in a direction intersecting the predetermined direction, In a plan view, the first metal wiring plate extends in the predetermined direction from an upper surface of the first semiconductor element, and a first control wiring extends in a direction intersecting the predetermined direction, A semiconductor module, in which, in a planar view, the second metal wiring plate extends from the upper surface of the second semiconductor element to one side in a direction intersecting the specified direction, and a second control wiring extends to the other side in the direction intersecting the specified direction.

2. The semiconductor module according to claim 1 , wherein the first connecting portion extends in the predetermined direction, and the second connecting portion extends in a direction intersecting the predetermined direction.

3. 2. The semiconductor module according to claim 1, wherein the first semiconductor element and the second semiconductor element have a main electrode formed on an upper surface on one side in a direction intersecting the predetermined direction, and a control electrode formed on an upper surface on the other side.

4. The semiconductor module according to claim 1 , wherein a direction in which one side of the first joint portion and one side of the second joint portion face each other intersects a direction in which one side of the third joint portion and one side of the fourth joint portion face each other.

5. The P terminal and the N terminal are arranged side by side in the predetermined direction, the M terminal is disposed opposite the N terminal across the second circuit board, 2. The semiconductor module according to claim 1, wherein a direction in which the M terminal faces the N terminal intersects with the predetermined direction.

6. The semiconductor module according to claim 5 , wherein a control terminal is disposed on the M terminal side.

7. The semiconductor module according to claim 1 , wherein one end of the first connection portion is connected to a center in a width direction of one side of the first joint portion.

8. One side of the first joint portion and one side of the second joint portion are disposed so as to be obliquely opposed to each other in a plan view, The semiconductor module according to claim 1 , wherein the first connecting portion includes a plate-like portion having a crank shape in a plan view.

9. 9. The semiconductor module according to claim 8, wherein the crank shape of the first connecting portion is bent in a direction away from a joint between the M terminal and the second circuit board.

10. The first connecting portion is a first rising portion rising upward from one side of the first joint portion; a second rising portion rising upward from one side of the second joint portion; 8. The semiconductor module according to claim 1, further comprising: a horizontal portion that connects an upper end of the first rising portion and an upper end of the second rising portion and has a crank shape in a plan view.

11. The semiconductor module according to claim 10 , wherein a fillet is formed at an edge portion of the horizontal portion in a plan view.

12. The semiconductor module according to claim 7 , wherein the other end of the first connecting portion is connected to a center in a width direction of one side of the second joint portion.

13. The semiconductor module according to claim 1 , wherein one end of the second connecting portion is connected to a center in a width direction of one side of the third joint portion.

14. One side of the third joint portion and one side of the fourth joint portion are disposed so as to be obliquely opposed to each other in a plan view, The semiconductor module according to claim 1 , wherein the second connecting portion includes a plate-like portion having a crank shape in a plan view.

15. The semiconductor module according to claim 14 , wherein the crank shape of the second connecting portion is bent in a direction away from a joint between the N terminal and the third circuit plate.

16. A semiconductor module as described in claim 1, wherein at least one of the first connecting portion and the second connecting portion is formed of an elongated body extending diagonally in a planar view.

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