Power Semiconductor Module with Laser Welded Leadframe

JP7680368B2Active Publication Date: 2025-05-20HITACHI ENERGY LTD
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Patent Information

Application Number
JP2021561814
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-04-18
Filing Date
2020-03-12
Publication Date
2025-05-20
Estimated Expiration
2040-03-12
Patent Text Reader

Abstract

The power semiconductor module (10) comprises a substrate (12) including a structured metallization layer (22), semiconductor chips (14) joined to the metallization layer (22) via first power electrodes (38), lead frames (16, 18) laser-welded to second electrodes (40) of a set (36a, 36b) of the semiconductor chips (14) for electrically interconnecting the semiconductor chips (14), and a control conductor (52) attached to the lead frames (16, 18) on the opposite side of the semiconductor chips (14) and electrically insulated from the lead frames (16, 18). The control conductor (52) is electrically connected to control electrodes (58) of the set (36a, 36b) of the semiconductor chips (14), and the control conductor (52) is laser-welded to at least one of the control electrodes (58).
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Citation Information

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