Resonant device and method for manufacturing the same

Abstract

A resonant device (1) comprising: a first substrate (50) that includes a first silicon substrate (20) and a resonator (10); a second substrate (30) that is disposed on the side of the first substrate (50) on which the resonator (10) is provided; and a connection part (60) for connecting the first substrate (50) and the second substrate (30) so as to seal the vibration space of the resonator (10). The resonator (10) has a silicon film (F2) provided on the surface thereof that is on the side facing the first silicon substrate (20), and the silicon film (F2) is directly bonded to the first silicon substrate (20) in an entire peripheral region surrounding the vibration space in a plan view of the first substrate.

Description

[Technical field]

[0001] The present invention relates to a resonator device and a method for manufacturing a resonator device. [Background technology]

[0002] Conventionally, resonator devices manufactured using MEMS (Micro Electro Mechanical Systems) technology have become widespread. This device is formed, for example, by bonding a second substrate to a first substrate having a resonator. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent No. 10800650

[0004] For example, Patent Document 1 discloses a MEMS including a silicon handle wafer, a bottom silicon oxide provided on the silicon handle wafer, a silicon device layer provided on the bottom silicon oxide, a middle silicon oxide provided on the silicon device layer, a lid layer silicon provided on the middle silicon oxide, a first barrier for blocking hydrogen and helium that penetrate through the bottom silicon oxide, and a second barrier for blocking hydrogen and helium that penetrate through the middle silicon oxide, the first barrier penetrating the bottom silicon oxide, the second barrier penetrating the middle silicon oxide, and the first and second barriers formed to surround a MEMS cavity formed in the silicon device layer. Summary of the Invention [Problem to be solved by the invention]

[0005] However, when the intrusion path of helium is blocked by a barrier penetrating silicon oxide as in Patent Document 1, there are cases where the intrusion of helium cannot be blocked sufficiently due to insufficient formation of the barrier.

[0006] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a resonator device and a method for manufacturing a resonator device that can suppress the intrusion of helium gas. [Means for solving the problem]

[0007] A resonator device according to one embodiment of the present invention comprises a first substrate including a first silicon substrate and a resonator, a second substrate arranged on the side of the first substrate where the resonator is provided, and a bonding portion that bonds the first substrate and the second substrate so as to seal a vibration space of the resonator, the resonator having a silicon film provided on a surface facing the first silicon substrate, the silicon film being directly bonded to the first silicon substrate in an entire peripheral region surrounding the vibration space in a plan view of the first substrate.

[0008] A method for manufacturing a resonator device according to another aspect of the present invention includes bonding a first silicon substrate and a resonator to form a first substrate, and forming a first substrate by bonding a first silicon substrate and a resonator to seal a vibration space of the resonator. Second 1 board and and bonding two substrates together, the resonator having a silicon film provided on a surface facing the first silicon substrate, the silicon film being provided in an entire peripheral region surrounding a vibration space in a plan view of the first substrate, and forming the first substrate includes directly bonding the silicon film and the first silicon substrate. Effect of the Invention

[0009] According to the present invention, it is possible to provide a resonator device capable of suppressing the intrusion of helium gas and a method for manufacturing a resonator device. [Brief description of the drawings]

[0010] [Figure 1] 1 is a perspective view illustrating a schematic configuration of a resonator device according to a first embodiment. [Diagram 2] 1 is an exploded perspective view illustrating a schematic configuration of a resonator device according to a first embodiment. [Diagram 3] 1 is a plan view illustrating a schematic structure of a resonator device according to a first embodiment. [Figure 4] 1 is a cross-sectional view illustrating a schematic structure of a resonator device according to a first embodiment. [Diagram 5] 4 is a flowchart illustrating a method for manufacturing a resonator device according to an embodiment of the present invention. [Figure 6] 6 is a cross-sectional view illustrating a schematic structure of a resonator device according to a second embodiment. FIG. [Figure 7] FIG. 11 is a cross-sectional view illustrating a schematic structure of a resonator device according to a third embodiment. [Figure 8] FIG. 11 is a cross-sectional view illustrating a schematic structure of a resonator device according to a fourth embodiment. [Figure 9] FIG. 13 is a cross-sectional view illustrating a schematic structure of a resonator device according to a fifth embodiment. [Figure 10] FIG. 13 is a cross-sectional view illustrating a schematic structure of a resonator device according to a sixth embodiment. [Figure 11] FIG. 13 is a cross-sectional view illustrating a schematic structure of a resonator device according to a seventh embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The drawings of the present embodiment are merely examples, and the dimensions and shapes of each part are schematic, and the technical scope of the present invention should not be interpreted as being limited to the embodiment.

[0012] First Embodiment The configuration of a resonator device 1 according to a first embodiment of the present invention will be described with reference to Fig. 1, Fig. 2, and Fig. 3. Fig. 1 is a perspective view that shows a schematic configuration of the resonator device according to the present embodiment. Fig. 2 is an exploded perspective view that shows a schematic structure of a resonator according to the first embodiment. Fig. 3 is a plan view that shows a schematic structure of the resonator device according to the first embodiment.

[0013] To clarify the relationships between the drawings and to aid in understanding the positional relationships of each component, each drawing is conveniently illustrated with an orthogonal coordinate system consisting of the X-axis, Y-axis, and Z-axis. The directions parallel to the X-axis, Y-axis, and Z-axis are called the X-axis direction, the Y-axis direction, and the Z-axis direction, respectively. For convenience, the positive direction of the Z-axis (the direction of the Z-axis arrow) is called "up," and the negative direction of the Z-axis (the direction opposite to the direction of the Z-axis arrow) is called "down." The plane defined by the X-axis and Y-axis is called the XY plane, and the same is true for the YZ plane and ZX plane.

[0014] The resonator device 1 includes a bottom cover 20, a resonator 10 (hereinafter, the bottom cover 20 and the resonator 10 are collectively referred to as the "MEMS substrate 50"), a top cover 30, and a joint 60. The MEMS substrate 50, the joint 60, and the top cover 30 are stacked in this order. The resonator 10 and the bottom cover 20 are directly joined, and the resonator 10 and the top cover 30 are joined by the joint 60. The MEMS substrate 50 corresponds to an example of a "first substrate" in the present invention, and the top cover 30 corresponds to an example of a "second substrate" in the present invention.

[0015] The following describes each component of the resonance device 1. In the following description, the side of the resonance device 1 on which the upper cover 30 is provided is referred to as the top (or front), and the side on which the lower cover 20 is provided is referred to as the bottom (or back).

[0016] The resonator 10 is a piezoelectric vibration element manufactured using MEMS technology. The resonator 10 vibrates in an out-of-plane bending vibration mode. The frequency band of the resonator 10 is, for example, 1 kHz or more and 1 MHz or less.

[0017] The resonator 10 includes a supporting arm 110, a vibrating portion 120, and a supporting portion 140. The resonator 10 is formed, for example, substantially symmetrically with respect to an imaginary plane P parallel to the YZ plane. Specifically, the supporting arm 110, the vibrating portion 120, and the supporting portion 140 are each formed substantially symmetrically with respect to the imaginary plane P.

[0018] The holding arm 110 connects the vibration section 120 and the holding section 140, and holds the vibration section 120 so that it can vibrate. The holding arm 110 is provided between the vibration section 120 and the holding section 140 when the XY plane is viewed in a plan view (hereinafter simply referred to as "plan view"). The holding arm 110 is composed of one arm extending in the Y-axis direction, one end of the holding arm 110 is connected to a rear end section 131B of the base section 130 described later, and the other end of the holding arm 110 is connected to a rear frame 141B of the holding section 140 described later. When viewed in a plan view, the dimension of the holding arm 110 along the X-axis direction is smaller than the dimension of the base section 130 along the X-axis direction.

[0019] The shape of the holding arm 110 is not limited to the above. For example, the holding arm 110 may be bent or may be composed of two or more arms. One end of the holding arm 110 may be connected to a left end 131C or a right end 131D of the base 130 described below, and the other end of the holding arm 110 may be connected to a front frame 141A, a left frame 141C, or a right frame 141D of the holding part 140 described below.

[0020] The vibration part 120 is held so as to be vibrable in a vibration space provided between the lower cover 20 and the upper cover 30. In plan view, the vibration part 120 is provided inside the holding part 140. A space is formed at a predetermined interval between the vibration part 120 and the holding part 140. The vibration part 120 extends along the XY plane when not vibrating (when no voltage is applied), and flexurally vibrates in the Z-axis direction when vibrating (when a voltage is applied). That is, the main vibration of the vibration part 120 is an out-of-plane flexural vibration mode.

[0021] The vibration section 120 has a base 130 and four vibration arms 135A, 135B, 135C, and 135D (hereinafter collectively referred to as "vibration arms 135"). The number of vibration arms is not limited to four, and may be set to any number equal to or greater than one. In this embodiment, the vibration section 120 and the base 130 are integrally formed.

[0022] The base 130 has a front end 131A, a rear end 131B, a left end 131C, and a right end 131D. The front end 131A, the rear end 131B, the left end 131C, and the right end 131D are each a part of the outer edge of the base 130. The front end 131A is an end extending in the X-axis direction on the side of the vibrating arms 135A to 135D. The rear end 131B is an end extending in the X-axis direction on the opposite side to the vibrating arms 135A to 135D. The left end 131C is an end extending in the Y-axis direction on the side of the vibrating arm 135A when viewed from the vibrating arm 135D. The right end 131D is an end extending in the Y-axis direction on the side of the vibrating arm 135D when viewed from the vibrating arm 135A. The vibrating arms 135A to 135D are connected to the front end 131A.

[0023] The shape of the base 130 when viewed from above is a substantially rectangular shape with the front end 131A and the rear end 131B as the long sides and the left end 131C and the right end 131D as the short sides. An imaginary plane P is defined along the perpendicular bisectors of the front end 131A and the rear end 131B. The base 130 is not limited to the above as long as it has a substantially plane-symmetrical structure with respect to the imaginary plane P, and may be, for example, a trapezoidal shape in which one of the front end 131A and the rear end 131B is longer than the other. At least one of the front end 131A, the rear end 131B, the left end 131C, and the right end 131D may be bent.

[0024] The base length, which is the maximum distance in the Y-axis direction between the front end 131A and the rear end 131B, is, for example, about 35 μm. The base width, which is the maximum distance in the X-axis direction between the left end 131C and the right end 131D, is, for example, about 265 μm. In the configuration example shown in FIG. 3, the base length corresponds to the length of the left end 131C or the right end 131D, and the base width corresponds to the width of the front end 131A or the rear end 131B.

[0025] The vibrating arms 135A to 135D each extend in the Y-axis direction and are arranged in this order at a predetermined interval in the X-axis direction. The vibrating arms 135A to 135D have a fixed end connected to the front end 131A of the base 130 and an open end farthest from the base 130. Each of the vibrating arms 135A to 135D has a weight G provided on the side of the open end where the displacement of the vibrating section 120 is relatively large, and an arm H connecting the base 130 and the weight G. An imaginary plane P is located between the vibrating arms 135B and 135C.

[0026] Of the four vibrating arms 135A to 135D, the vibrating arms 135A and 135D are outer vibrating arms arranged on the outside in the X-axis direction, and the vibrating arms 135B and 135C are inner vibrating arms arranged on the inside in the X-axis direction. Arm 1 The outer vibrating arms 135A and 135D have a symmetrical structure to each other. The outer vibrating arms 135A and 135D have a symmetrical structure to each other.

[0027] The shape and size of each of the vibrating arms 135A to 135D are approximately the same. The length of each of the vibrating arms 135A to 135D in the Y-axis direction is, for example, about 450 μm. For example, the length of the arm H in the Y-axis direction is about 300 μm, and the width of the arm H in the X-axis direction is about 50 μm. For example, the length of the weight G in the Y-axis direction is about 150 μm, and the width of the weight G in the X-axis direction is about 70 μm. By forming the weight G, the weight per unit length of the vibrating arm 135 is heavier on the open end side than on the fixed end side. Therefore, by having the weight G on the open end side of each of the vibrating arms 135, the amplitude of the vibration in the vertical direction of the vibrating arm 135 can be increased.

[0028] The holding portion 140 is a portion for holding the vibration portion 120 in a vibration space formed by the lower cover 20 and the upper cover 30. For example, the holding portion 140 surrounds the vibration portion 120 in a frame shape in a plan view. In the example shown in FIG. 3, the holding portion 140 has a front frame 141A, a rear frame 141B, a left frame 141C, and a right frame 141D. The front frame 141A, the rear frame 141B, the left frame 141C, and the right frame 141D are each a part of a substantially rectangular frame body surrounding the vibration portion 120. Specifically, the front frame 141A is a portion extending in the X-axis direction on the vibrating arm 135 side as viewed from the base 130. The rear frame 141B is a portion extending in the X-axis direction on the base 130 side as viewed from the vibrating arm 135. The left frame 141C is a portion extending in the Y-axis direction on the vibrating arm 135A side when viewed from the vibrating arm 135D. The right frame 141D is a portion extending in the Y-axis direction on the vibrating arm 135D side when viewed from the vibrating arm 135A. The front frame 141A and the rear frame 141B are each divided into two equal parts by a virtual plane P.

[0029] Both ends of the left frame 141C are connected to one end of the front frame 141A and one end of the rear frame 141B, respectively. Both ends of the right frame 141D are connected to the other end of the front frame 141A and the other end of the rear frame 141B, respectively. The front frame 141A and the rear frame 141B face each other in the Y-axis direction with the vibration unit 120 in between. The left frame 141C and the right frame 141D face each other in the X-axis direction with the vibration unit 120 in between.

[0030] The bottom cover 20 is a part of a package structure surrounding the vibration part 120 of the resonator 10. The bottom cover 20 is directly bonded to the bottom surface of the resonator 10. The bottom cover 20 has a rectangular flat bottom plate 22 having a main surface extending along the XY plane, and a side wall 23 extending from the peripheral edge of the bottom plate 22 toward the top cover 30. The side wall 23 is bonded to the holding part 140 of the resonator 10. The bottom cover 20 has a cavity 21 surrounded by the bottom plate 22 and the side wall 23 on the side facing the vibration part 120 of the resonator 10. The cavity 21 is a rectangular parallelepiped opening that opens upward.

[0031] The top cover 30 is a part of the package structure surrounding the vibration part 120 of the resonator 10. The top cover 30 is joined to the top surface of the resonator 10 via a joint 60. The top cover 30 has a rectangular flat bottom plate 32 having a main surface extending along the XY plane, and a side wall 33 extending from the peripheral part of the bottom plate 32 toward the bottom cover 20. The side wall 33 is joined to the holding part 140 of the resonator 10. A cavity 31 surrounded by the bottom plate 32 and the side wall 33 is formed in the top cover 30 on the side facing the vibration part 120 of the resonator 10. The cavity 31 is a rectangular parallelepiped opening that opens downward. The cavity 21 and the cavity 31 face each other with the vibration part 120 of the resonator 10 in between, forming a vibration space of the package structure.

[0032] The joint 60 joins the MEMS substrate 50 and the top lid 30, and hermetically seals the vibration space formed between the bottom lid 20 and the top lid 30. The joint 60 is provided between the holding portion 140 of the resonator 10 and the side wall 33 of the top lid 30. In plan view, the joint 60 is provided in a frame shape surrounding the vibration portion 120 of the resonator 10.

[0033] Next, a laminated structure of the resonator device 1 according to one embodiment of the present invention will be described with reference to Fig. 4. Fig. 4 is a cross-sectional view showing a schematic configuration of a cross section taken along line IV-IV of the resonator device 1 shown in Figs. 1 to 3.

[0034] The resonator 10 is held between a lower lid 20 and an upper lid 30. The resonator 10, the lower lid 20, and the upper lid 30 are each formed using a silicon (Si) substrate.

[0035] The holding arm 110, the vibration part 120 and the holding part 140 of the resonator 10 are integrally formed by the same process. The resonator 10 has a silicon oxide film F21, a silicon substrate F2, an insulating film F31, a metal film E2, a piezoelectric film F3, a metal film E1, a protective film 235, a frequency adjustment film 236 and a parasitic capacitance reducing film 240. The resonator 10 is formed by patterning by a removal process of a laminate consisting of the silicon substrate F2, the metal film E2, the piezoelectric film F3, the metal film E1, the protective film 235 and the like. The removal process is, for example, dry etching using an argon (Ar) ion beam.

[0036] The silicon oxide film F21 is provided on the side of the resonator 10 facing the bottom cover 20. The silicon oxide film F21 is provided on the base 130 and arm H of the vibrating part 120, and also on the supporting arm 110. The silicon oxide film F21 is spaced apart from the weight G of the vibrating part 120 and also from the supporting part 140. In plan view, the silicon oxide film F21 is a region surrounded by the supporting part 140 and is provided outside the weight G. The silicon oxide film F21 is provided on the Z-axis of the lower surface of the silicon substrate F2. shaft The silicon oxide film F21 is provided in a region facing the cavity 21 of the lower cover 20 in the direction, avoiding the weight portion G which is an example of a tip region. The silicon oxide film F21 is made of silicon oxide including, for example, SiO2. The silicon oxide film F21 functions as a temperature characteristic correction layer which reduces the temperature coefficient of the resonance frequency of the resonator 10, i.e., the rate of change of the resonance frequency per unit temperature, at least near room temperature.

[0037] The silicon oxide film F21 may be provided at least on the arm portion H of the vibrating part 120, avoiding the supporting arm 110 and the base portion 130. However, it is preferable that the silicon oxide film F21 is provided on the base portion 130 in addition to the arm portion H of the vibrating part 120, and it is further preferable that the silicon oxide film F21 is provided on the supporting arm 110.

[0038] The silicon substrate F2 is provided on the side of the resonator 10 facing the silicon substrate L1 of the lower cover 20. The silicon substrate F2 is provided over the entire surface of the resonator 10 when viewed in a plan view. That is, the silicon substrate F2 is provided on the holding arm 110, the base 130 and the vibrating arm 135 of the vibrating part 120, and the holding part 140. The silicon substrate F2 is formed of a degenerate n-type silicon (Si) semiconductor containing, for example, phosphorus (P), arsenic (As), or antimony (Sb) as an n-type dopant. The resistance value of the degenerate silicon (Si) used for the silicon substrate F2 is, for example, less than 16 mΩ·cm, and more preferably 1.2 mΩ·cm or less. The thickness of the silicon substrate F2 is, for example, about 6 μm. The silicon substrate F2 is, for example, single crystal silicon, but may be polycrystalline silicon or amorphous silicon. The silicon substrate F2 corresponds to an example of the "silicon film" according to the present invention.

[0039] The insulating film F31 is laminated on the silicon substrate F2, the metal film E2 is laminated on the insulating film F31, the piezoelectric film F3 is laminated on the metal film E2, and the metal film E1 is laminated on the piezoelectric film F3.

[0040] The insulating film F31 insulates the silicon substrate F2 from the metal film E2. The insulating film F31 is made of, for example, the same material as the piezoelectric film F3.

[0041] Each of the metal films E2 and E1 has a portion that functions as an excitation electrode for exciting the vibrating arms 135A to 135D and a portion that functions as an extraction electrode for electrically connecting the excitation electrode to an external power source. The portions of the metal films E2 and E1 that function as excitation electrodes face each other in the arm parts H of the vibrating arms 135A to 135D, sandwiching the piezoelectric film F3. The portions of the metal films E2 and E1 that function as extraction electrodes are led from the base part 130 to the holding part 140 via the holding arm 110, for example. The metal film E2 is electrically continuous over the entire resonator 10. The portion of the metal film E1 formed on the outer vibrating arms 135A and 135D is electrically separated from the portion formed on the inner vibrating arms 135B and 135C. The metal film E2 corresponds to a lower electrode, and the metal film E1 corresponds to an upper electrode. The thickness of each of the metal films E2 and E1 is, for example, about 0.1 μm or more and 0.2 μm or less. After being formed, the metal films E2 and E1 are patterned into excitation electrodes and extraction electrodes, etc., by a removal process such as etching. The metal films E2 and E1 are formed, for example, from a metal material whose crystal structure is a body-centered cubic structure. Specifically, the metal films E2 and E1 are formed from Mo (molybdenum), tungsten (W), etc.

[0042] The piezoelectric film F3 is a thin film formed by a piezoelectric body that converts electrical energy and mechanical energy into each other. The piezoelectric film F3 expands and contracts in the Y-axis direction among the in-plane directions of the XY plane according to the electric field applied by the metal films E2 and E1. The expansion and contraction of the piezoelectric film F3 causes the vibrating arm 135 to bend, displacing its open end toward the bottom plate 22 of the lower cover 20 or the bottom plate 32 of the upper cover 30. Alternating voltages of opposite phases are applied to the upper electrodes of the outer vibrating arms 135A and 135D and the upper electrodes of the inner vibrating arms 135B and 135C. As a result, the outer vibrating arms 135A and 135D and the inner vibrating arms 135B and 135C vibrate in opposite phases. For example, when the open ends of the outer vibrating arms 135A and 135D are displaced toward the lower cover 20, the open ends of the inner vibrating arms 135B and 135C are displaced toward the upper cover 30. Due to such vibrations of opposite phases, a torsion moment is generated around a rotation axis extending in the Y-axis direction in the vibrating part 120. The base part 130 is bent by this torsion moment, and the left end part 131C and the right end part 131D are displaced toward the lower cover 20 or the upper cover 30.

[0043] The piezoelectric film F3 is formed of a material having a wurtzite hexagonal crystal structure, and may be mainly composed of nitrides or oxides such as aluminum nitride (AlN), scandium aluminum nitride (ScAlN), zinc oxide (ZnO), gallium nitride (GaN), and indium nitride (InN). Scandium aluminum nitride is aluminum nitride in which a part of the aluminum is replaced with scandium, and the scandium may be replaced with two elements such as magnesium (Mg) and niobium (Nb), or magnesium (Mg) and zirconium (Zr). The thickness of the piezoelectric film F3 is, for example, about 1 μm, but may be about 0.2 μm or more and 2 μm or less.

[0044] The protective film 235 is laminated on the metal film E1. The protective film 235 protects the metal film E1 from oxidation, for example. The material of the protective film 235 is, for example, an oxide, nitride, or oxynitride containing aluminum (Al), tantalum (Ta), zinc (Zn), gallium (Ga), indium (In), or silicon (Si).

[0045] The frequency adjustment film 236 is a protective film at the weight portion G. 235 The frequency adjustment film 236 is etched to adjust the frequency of the resonator 10. Number The frequency adjustment film 236 is desirably formed of a material having a mass reduction rate by etching faster than the protective film F5. The mass reduction rate is expressed by the product of the etching rate and the density. The etching rate is the thickness removed per unit time. The protective film 235 and the frequency adjustment film 236 may have any etching rate relationship as long as the relationship of the mass reduction rate is as described above. The frequency adjustment film 236 also functions as a mass-adding film that increases the weight per unit length of the weight portion G. From the viewpoint of the mass-adding film, the frequency adjustment film 236 is desirably formed of a material having a large specific gravity. From the above two viewpoints, the material of the frequency adjustment film 236 is desirably a metal material such as molybdenum (Mo), tungsten (W), gold (Au), platinum (Pt), nickel (Ni) or titanium (Ti).

[0046] The parasitic capacitance reducing film 240 is a protective film in the holding portion 140. 235 The parasitic capacitance reducing film 240 reduces the parasitic capacitance formed between the internal wirings of the resonator 10. The parasitic capacitance reducing film 240 also functions as an insulating layer when wirings of different potentials cross, and as a stand-off for expanding the vibration space. The parasitic capacitance reducing film 240 is made of, for example, tetraethyl orthosilicate (TEOS). The thickness of the parasitic capacitance reducing film 240 is, for example, about 1 μm.

[0047] Contact electrodes 76A and 76B are provided on the parasitic capacitance reduction film 240 of the holding unit 140. The contact electrode 76A is electrically connected to the metal film E1 through a through electrode V1 that penetrates the protective film 235 and the parasitic capacitance reduction film 240. The contact electrode 76B is electrically connected to the metal film E2 through a through electrode V2 that penetrates the piezoelectric film F3, the protective film 235, and the parasitic capacitance reduction film 240. The contact electrodes 76A and 76B are formed of a metal material such as aluminum (Al), germanium (Ge), gold (Au), or tin (Sn).

[0048] The bottom plate 22 and side walls 23 of the lower cover 20 are integrally formed from a silicon substrate L1. The silicon substrate L1 is formed from a non-degenerate silicon semiconductor and has a resistivity of, for example, 10 Ω·cm or more. The maximum thickness of the silicon substrate L1 is greater than the thickness of the silicon substrate F2 and is, for example, about 150 μm. The depth of the cavity 21 is, for example, about 50 μm. The silicon substrate L1 corresponds to an example of a "first silicon substrate" according to the present invention.

[0049] The silicon substrate L1 forms the surface of the bottom cover 20. Therefore, the silicon substrate L1 of the bottom cover 20 and the silicon substrate F2 of the resonator 10 are in contact with each other at the joint between the side wall 23 of the bottom cover 20 and the holding portion 140 of the resonator 10. That is, the silicon substrate L1 and the silicon substrate F2 are directly bonded to each other in the entire peripheral region surrounding the vibration space of the resonator 10 in a plan view.

[0050] The bottom plate 32 and the side wall 33 of the upper cover 30 are integrally formed by the silicon substrate L3. A silicon oxide film L31 is provided on the surface of the silicon substrate L3. Specifically, the silicon oxide film L31 is provided in the region between the silicon substrate L3 and the through electrodes V31, V32 described later, the region between the silicon substrate L3 and the connection wirings 70A, 70B described later, and the region between the silicon substrate L3 and the terminals T41, T42 described later. The silicon oxide film L31 inhibits short-circuiting of electrodes and the like via the silicon substrate L3. In addition, since electrodes and the like that may cause short-circuiting are not provided on the inner wall of the cavity 31 among the surface of the silicon substrate L3, the silicon substrate L3 may be exposed at the inner wall of the cavity 31. The silicon oxide film L31 is formed, for example, by thermal oxidation of the silicon substrate L3 or chemical vapor deposition (CVD). For example, the thickness of the upper cover 30 is about 150 μm, and the depth of the cavity 31 is about 50 μm. The silicon substrate L3 corresponds to an example of a "second silicon substrate" according to the present invention.

[0051] A metal film 34 is provided on the lower surface of the bottom plate 32 of the upper lid 30. The metal film 34 is a getter that improves the degree of vacuum by absorbing gas in the vibration space formed by the cavities 21 and 31, and absorbs, for example, hydrogen gas. The metal film 34 contains, for example, titanium (Ti), zirconium (Zr), vanadium (V), niobium (Nb), tantalum (Ta), or an alloy containing at least one of these. The metal film 34 may contain an oxide of an alkali metal or an oxide of an alkaline earth metal.

[0052] The upper cover 30 is provided with through electrodes V31 and V32. The through electrodes V31 and V32 are provided inside through holes penetrating the side wall 33 in the Z-axis direction. The through electrodes V31 and V32 are surrounded by a silicon oxide film L31 and are insulated from each other. The through electrodes V31 and V32 are formed by filling the through holes with, for example, polycrystalline silicon (Poly-Si), copper (Cu), gold (Au), or the like.

[0053] The lower surface of the upper cover 30 is provided with connection wiring 70A, 70B, and the upper surface of the upper cover 30 is provided with terminals T41, T42. The connection wiring 70A is connected to the lower end of the through electrode V31, and the terminal T41 is connected to the upper end of the through electrode V31. The connection wiring 70B is connected to the lower end of the through electrode V32, and the terminal T42 is connected to the upper end of the through electrode V32. The connection wiring 70A is a connection terminal that electrically connects the through electrode V31 and the contact electrode 76A, and the terminal T41 is a mounting terminal that electrically connects the metal film E1 of the outer vibrating arms 135A and 135D to an external power source. The connection wiring 70B is a connection terminal that electrically connects the through electrode V32 and the contact electrode 76B, and the terminal T42 is a mounting terminal that grounds the metal film E2. The connection wiring 70B is a connection terminal that electrically connects the through electrode V32 and the contact electrode 76B, and the terminal T42 is a mounting terminal that electrically connects the metal film E2 of the outer vibrating arms 135A and 135D to an external power source. Although not shown in the figure, the upper cover 30 is further provided with a through electrode, a connection wiring, and a terminal that are electrically connected to the metal film E1 of the inner vibrating arms 135B and 135C.

[0054] The connection wires including the connection wires 70A and 70B are electrically insulated from each other by the silicon oxide film L31. The terminals including the terminals T41 and T42 are also electrically insulated from each other by the silicon oxide film L31. The connection wires and the terminals are formed by plating a metallized layer (base layer) of chromium (Cr), tungsten (W), nickel (Ni), or the like with nickel (Ni), gold (Au), silver (Ag), copper (Cu), or the like. The terminals may include a dummy terminal electrically insulated from the resonator 10 for the purpose of adjusting the balance of parasitic capacitance and mechanical strength.

[0055] The bonding portion 60 bonds the side wall 33 of the top lid 30 and the holding portion 140 of the resonator 10. The bonding portion 60 has, for example, a silicon oxide film 61, a first metal film 62, and a second metal film 63. The first metal film 62 and the second metal film 63 are eutectic bonded to bond the MEMS substrate 50 and the top lid 30 together.

[0056] Next, a method for manufacturing the resonator device 1 according to the first embodiment of the present invention will be described with reference to Fig. 5. Fig. 5 is a flowchart showing the method for manufacturing the resonator device 1 according to one embodiment of the present invention.

[0057] First, silicon substrates are directly bonded together (S10). First, two plate-shaped silicon substrates L1 and F2 are prepared. Next, one side of each of the silicon substrates L1 and F2 is mirror-polished. Next, a cavity 21 is formed on the mirror-polished side of the silicon substrate L1. Next, the mirror surfaces of the silicon substrates L1 and F2 are washed and hydrophilized using pure water or the like. Next, the hydrophilized mirror surfaces are placed together, and the silicon substrates L1 and F2 are heated. Note that the mirror polishing of the silicon substrate L1 may be performed after the cavity 21 is formed.

[0058] Here, direct bonding of silicon substrates requires a higher flatness of the bonding surface than bonding via a silicon oxide film. For this reason, the mirror polishing process in step S10 may include, for example, two or more polishing processes. The surface roughness Ra of each of the mirror surfaces of the silicon substrates L1 and F2 is preferably 1 nm or less, more preferably 0.5 nm or less, and even more preferably 0.3 nm or less.

[0059] Next, the resonator 10 is formed (S20). 2 An insulating film F31, a metal film E2, a piezoelectric film F3, a metal film E1, a protective film 235, etc. are formed in this order on top of the above, and the vibration part 120, the holding part 140, and the holding arms 110 of the resonator 10 are patterned by etching. In this way, the resonator 10 bonded to the lower cover 20 is formed, and the MEMS substrate 50 is prepared.

[0060] Next, frequency adjustment is performed before sealing (S30). The frequency of the resonator 10 is adjusted by trimming the mass-adding film while monitoring the frequency of the resonator 10.

[0061] Next, the MEMS substrate 50 and the top cover 30 are bonded together (S40). The MEMS substrate 50 and the top cover 30 are bonded together by the arm portion H in a vacuum environment.

[0062] Next, the frequency is adjusted after sealing (S50). An electric field stronger than the electric field applied during normal use of the resonator device 1 is applied between the metal films E1 and E2 of the resonator 10, to increase the amplitude of the resonator 10 (hereinafter, also referred to as "overexcitation"). The tip of the vibrating arm 135 of the overexcited resonator 10 collides with the inner wall of the lower cover 20, and the tip of the vibrating arm 135 is scraped off. This causes a change in the mass of the vibrating arm 135 to adjust the frequency of the resonator 10.

[0063] As described above, the silicon substrate L1 and the silicon substrate F2 are directly bonded to each other in the entire peripheral region surrounding the vibration space of the resonator 10 in a plan view.

[0064] According to this, the silicon substrate L1 and the silicon substrate F2 are directly bonded without the interlayer silicon oxide film, which is a path through which helium can penetrate, and therefore it is possible to prevent helium gas from penetrating between the silicon substrate L1 and the silicon substrate F2. Therefore, the decrease in the degree of vacuum in the vibration space is prevented, and reliability is improved. In addition, since the resonator 1 has similar airtightness against helium gas and nitrogen gas, it can be tested using inexpensive nitrogen gas instead of an airtightness test using helium gas. Therefore, it is possible to select products with poor airtightness at a low cost compared to a configuration in which the airtightness against helium gas and the airtightness against nitrogen gas are different, for example, a configuration in which the intrusion of helium gas is blocked by a blocking member that penetrates an interlayer silicon oxide film provided between silicon substrates, in which a blocking member is formed poorly.

[0065] Furthermore, since the silicon oxide film F21 is provided so as to avoid the holding portion 140, a path for helium gas to penetrate between the silicon substrate L1 and the silicon substrate F2 is not formed, and the frequency temperature characteristic of the resonator 10 can be compensated for.

[0066] In addition, since the silicon oxide film F21 is provided to avoid the weight portion G of the vibrating arm 135, when the frequency is adjusted by colliding the vibrating arm 135 against the lower cover 20 through overexcitation and scraping it, the silicon substrate L1 and the silicon substrate F2 collide with each other. Silicon is more easily scraped by a low-speed collision than silicon oxide. For this reason, when the cavity 21 is made shallow, dust generated by scraping the lower cover 20 until the frequency adjustment is completed by scraping the vibrating arm 135 can be reduced compared to a configuration in which a silicon oxide film is provided at the tip region of the vibrating part. Therefore, the resonator device 1 can be made low-profile.

[0067] <Second embodiment> Next, the structure of the resonator device 2 according to the second embodiment will be described with reference to Fig. 6. Fig. 6 is a cross-sectional view that illustrates a schematic structure of the resonator device according to the second embodiment.

[0068] In the second embodiment, the formation region of the silicon oxide film F21 is different from that in the first embodiment. Specifically, in the first embodiment, the silicon oxide film F21 is provided on the lower surfaces of the supporting arms 110, the base 130, and the arm parts H of the resonator 10, whereas in the present embodiment, the silicon oxide film F21 is further provided on the lower surface of the weight part G of the resonator 10. In this manner, the resonator 10 has the silicon oxide film F21 provided on the entire surface of the side of the vibration part 120 facing the silicon substrate L1. According to this, by forming the silicon oxide film F21 on the lower surfaces of the supporting arms 110, the base 130, the weight part G, and the arm parts H of the resonator 10, which have a large effect on the frequency-temperature characteristic of the resonator, the thickness of the silicon oxide film F21 can be optimized to obtain a good frequency-temperature characteristic.

[0069] <Third embodiment> Next, the structure of a resonator device 3 according to a third embodiment will be described with reference to Fig. 7. Fig. 7 is a cross-sectional view that illustrates a schematic structure of the resonator device according to the third embodiment.

[0070] The third embodiment is different from the first embodiment in that the silicon oxide film F21 is not provided. That is, in this embodiment, the resonator 10 has a silicon substrate F2 provided on the surface facing the lower cover 20. Specifically, the silicon substrate F2 is provided as the outermost layer on the lower surfaces of the supporting arms 110 and the vibrating part 120 of the resonator 10. This makes it unnecessary to form the silicon oxide film F21, and therefore simplifies the manufacturing process.

[0071] <Fourth embodiment> Next, the structure of the resonator device 4 according to the fourth embodiment will be described with reference to Fig. 8. Fig. 8 is a cross-sectional view that illustrates a schematic structure of the resonator device according to the fourth embodiment.

[0072] In the fourth embodiment, unlike the first embodiment in which the silicon oxide film L31 is formed on the upper and lower surfaces of the top cover 30, a silicon nitride film F4 is formed instead of the silicon oxide film L31. That is, in this embodiment, the top cover 30 has a silicon nitride film F4 provided on at least one of the surface of the silicon substrate L3 facing the resonator 10 and the surface opposite to the surface. Since the silicon nitride film F4 is provided instead of the silicon oxide film L31 in this way, it is possible to suppress the intrusion of helium gas from the outside into the vibration space via the silicon oxide film L31 provided on the upper or lower surface of the top cover 30. Therefore, it is possible to suppress helium leakage more effectively. In addition, since the silicon nitride film F4 is formed on the wafer surface, it is possible to easily select formation defects by visual inspection, and it is possible to provide a resonator having helium leakage resistance without performing the conventional high-cost screening inspection. Note that in this embodiment, the silicon nitride film F4 is formed on both the upper and lower surfaces of the top cover 30, but this is not limited thereto, and it is sufficient that the silicon nitride film F4 is formed on at least one of the upper and lower surfaces.

[0073] <Fifth embodiment> Next, the structure of a resonator device 5 according to a fifth embodiment will be described with reference to Fig. 9. Fig. 9 is a cross-sectional view that illustrates a schematic structure of the resonator device according to the fifth embodiment.

[0074] In the fifth embodiment, the aspect of the bonding portion 60 is different from that in the first embodiment. Specifically, in this embodiment, the bonding portion 60 is formed by a silicon oxide film 61a provided on the MEMS substrate 50 side and a second insulating film 62a covering the sidewall of the silicon oxide film 61a. 1 Metal film 62a and 1 The second metal film 63 is laminated on the metal film 62a. 1 Since the sidewall of the silicon oxide film 61a is covered with the metal film 62a, it is possible to more effectively prevent the helium gas from entering the vibration space from the outside.

[0075] Sixth embodiment Next, the structure of a resonator device 6 according to a sixth embodiment will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view that illustrates a schematic structure of the resonator device according to the sixth embodiment.

[0076] In the sixth embodiment, the aspect of the bonding portion 60 is different from that in the first and fifth embodiments. Specifically, in this embodiment, the bonding portion 60 has a silicon nitride film 61b provided on the MEMS substrate 50 side, a first metal film 62 laminated on the silicon nitride film 61b, and a second metal film 63 laminated on the first metal film 62. The first metal film 62 and the second metal film 63 are provided between the resonator 10 and the upper cover 30. In this way, by adopting the silicon nitride film 61b instead of the silicon oxide film in the bonding portion 60, it is possible to more effectively suppress the intrusion of helium gas from the outside into the vibration space.

[0077] Seventh embodiment Next, the structure of a resonator device 7 according to a seventh embodiment will be described with reference to Fig. 11. Fig. 11 is a cross-sectional view that illustrates a schematic structure of the resonator device according to the seventh embodiment.

[0078] The seventh embodiment is different from the first embodiment in that a silicon oxide film F22 is provided on the silicon substrate L1. Specifically, in this embodiment, the silicon oxide film F22 is provided on the bottom surface of the bottom plate 22 of the silicon substrate L1. This makes it possible to suppress cutting waste generated from the lower cover 20 side during overexcitation processing in the frequency adjustment process.

[0079] Some or all of the embodiments of the present invention will be described below. Note that the present invention is not limited to the following descriptions.

[0080] According to one aspect of the present invention, there is provided a resonator device comprising: a first substrate including a first silicon substrate and a resonator; a second substrate arranged on the side of the first substrate where the resonator is provided; and a bonding portion bonding the first substrate to the second substrate so as to seal a vibration space of the resonator, wherein the resonator has a silicon film provided on a surface facing the first silicon substrate, and the silicon film is directly bonded to the first silicon substrate in an entire peripheral region surrounding the vibration space in a plan view of the first substrate.

[0081] In one embodiment, a cavity that defines a vibration space is formed in the first silicon substrate, and the resonator may include a vibration portion located inside the vibration space, a holding portion provided around the vibration portion in a planar view of the first substrate, and a holding arm that connects the holding portion and the vibration portion.

[0082] As one aspect, the silicon film may be provided on the entire surface of the vibration part on the side facing the first silicon substrate.

[0083] As one aspect, the resonator may have a silicon oxide film provided on a surface of the vibration part facing the first silicon substrate.

[0084] In one embodiment, the vibrating portion includes a base connected to the supporting arm and a plurality of vibrating arms connected to the base, and the silicon oxide film may be provided to avoid tip regions of the plurality of vibrating arms opposite the base when viewed in a plan view of the first substrate.

[0085] As one aspect, the second substrate may include a second silicon substrate and a silicon nitride film provided on at least one of a surface of the second silicon substrate facing the resonator and a surface opposite to the surface.

[0086] As one embodiment, the bonding portion may include a silicon oxide film provided on the first substrate side, and a metal film covering a sidewall of the silicon oxide film.

[0087] As one embodiment, the bonding portion may include a silicon nitride film provided on the first substrate side, and a metal film provided between the silicon nitride film and the second substrate.

[0088] As one embodiment, a silicon oxide film may be provided on the bottom surface of the cavity of the first silicon substrate.

[0089] According to another aspect of the present invention, there is provided a method for manufacturing a resonator device, the method including: forming a first substrate by bonding a first silicon substrate and a resonator; and bonding the first substrate and a second substrate so as to seal a vibration space of the resonator, the resonator having a silicon film provided on a surface facing the first silicon substrate, the silicon film being provided in an entire peripheral region surrounding the vibration space in a plan view of the first substrate; and forming the first substrate includes directly bonding the silicon film and the first silicon substrate.

[0090] As one embodiment, the method may further include, after bonding the first substrate and the second substrate, applying a voltage to the resonator to cause the resonator to collide with the first substrate, thereby adjusting the frequency.

[0091] Although a resonator using an out-of-plane bending vibration mode has been described as an example of a resonator according to an embodiment of the present invention, the resonator according to the present invention is not limited to this. The resonator may be, for example, a piezoelectric vibration element using a splay vibration mode, a thickness extension vibration mode, a Lamb wave vibration mode, an in-plane bending vibration mode, or a surface wave vibration mode. Furthermore, the resonator may be an electrostatic MEMS element, an electromagnetically driven MEMS element, or a piezoresistive MEMS element.

[0092] The embodiments of the present invention can be appropriately applied to any device that utilizes the frequency characteristics of an oscillator, such as a timing device, an RF filter, a duplexer, an ultrasonic transducer, a sound generator, an oscillator, a gyro sensor, an acceleration sensor, a load sensor, etc., without any particular limitations.

[0093] As described above, according to one aspect of the present invention, it is possible to provide a resonator device and a method for manufacturing a resonator device that are capable of suppressing the intrusion of helium gas.

[0094] The above-described embodiments are intended to facilitate understanding of the present invention, and are not intended to limit the present invention. The present invention may be modified / improved without departing from the spirit thereof, and equivalents are also included in the present invention. That is, those in which a person skilled in the art appropriately adds design changes to each embodiment are also included in the scope of the present invention as long as they have the characteristics of the present invention. For example, the elements and their arrangements, materials, conditions, shapes, sizes, etc. of each embodiment are not limited to those exemplified, and can be appropriately changed. In addition, the elements of each embodiment can be combined to the extent technically possible, and those combinations of these are also included in the scope of the present invention as long as they include the characteristics of the present invention. [Explanation of symbols]

[0095] 1...Resonator device 10...Resonator 20...Lower cover 30...Upper cover 50...MEMS board 110...Holding arm 120...Vibrating part 130...Base 140...Holding part G...Weight part H...Arm part F2,L1...Silicon substrate F21...Silicon oxide film

Claims

1. a first substrate including a first silicon substrate and a resonator; a second substrate disposed on a side of the first substrate on which the resonator is provided; a joint portion that joins the first substrate and the second substrate together so as to seal a vibration space of the resonator; Equipped with the resonator has a silicon film provided on a surface facing the first silicon substrate, The silicon film is directly bonded to the first silicon substrate in an entire peripheral region surrounding the vibration space in a plan view of the first substrate.

2. A cavity that constitutes the vibration space is formed in the first silicon substrate, 2. The resonator according to claim 1, wherein the resonator includes a vibration portion located inside the vibration space, a holding portion provided around the vibration portion in a planar view of the first substrate, and a holding arm connecting the holding portion and the vibration portion.

3. The resonator device according to claim 2 , wherein the silicon film is provided on the entire surface of the vibrating portion on a side facing the first silicon substrate.

4. 3. The resonator device according to claim 2, wherein the resonator has a silicon oxide film provided on a surface of the vibration portion facing the first silicon substrate.

5. The vibration unit includes a base connected to the support arm and a plurality of vibration arms connected to the base, The resonator device according to claim 4 , wherein the silicon oxide film is provided so as to avoid tip regions of the plurality of vibrating arms opposite to the base portions in a plan view of the first substrate.

6. 6. The resonator device according to claim 1, wherein the second substrate includes a second silicon substrate and a silicon nitride film provided on at least one of a surface of the second silicon substrate facing the resonator and a surface opposite to the surface.

7. The resonator device according to claim 1 , wherein the joint portion includes a silicon oxide film provided on the first substrate side, and a metal film covering a sidewall of the silicon oxide film.

8. The resonator device according to claim 1 , wherein the joint portion includes a silicon nitride film provided on a side of the first substrate, and a metal film provided between the silicon nitride film and the second substrate.

9. 3. The resonator device according to claim 2, wherein a silicon oxide film is provided on a bottom surface of the cavity of the first silicon substrate.

10. bonding a first silicon substrate and a resonator to form a first substrate; joining the first substrate and the second substrate together so as to seal a vibration space of the resonator; Including, the resonator has a silicon film provided on a surface facing the first silicon substrate, the silicon film is provided in an entire peripheral region surrounding the vibration space in a plan view of the first substrate, A method for manufacturing a resonator device, wherein forming the first substrate includes directly bonding the silicon film and the first silicon substrate.

11. The method for manufacturing a resonator device according to claim 10 , further comprising, after bonding the first substrate and the second substrate, applying a voltage to the resonator to collide the resonator with the first substrate to adjust a frequency.

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