Fullerene derivatives, n-type semiconductor materials, organic power generation layers, and photoelectric conversion elements

JP7680786B2Active Publication Date: 2025-05-21HARVES CO LTD
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Patent Information

Application Number
JP2023564902
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-11-30
Filing Date
2022-11-22
Publication Date
2025-05-21
Estimated Expiration
2042-11-22

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Abstract

The present invention provides a fullerene derivative that enables a photoelectric conversion element, which comprises an organic power generation layer that uses this fullerene derivative as an n-type semiconductor material, to achieve a high conversion efficiency, while enabling the photoelectric conversion element to maintain the high conversion efficiency for a long period of time. The present invention provides a fullerene derivative which is represented by formula (1).
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Citation Information

Patent Citations

  • Organic photoelectric conversion element, solar cell using it and optical sensor array

    JP2012015434A

  • Fullerene derivative and method for producing the same

    JP2014218492A

  • Fullerene derivative and method of producing the same

    JP2015113301A

  • Fullerene derivative and n-type semiconductor material

    WO2014185536A1

  • FULLERENE DERIVATIVE AND n-TYPE SEMICONDUCTOR MATERIAL

    WO2017061543A1