Plasma Processing Equipment

Abstract

To allow cleaning by remote plasma even in a case where a radiation part for radiating a microwave is arranged on an upper part of a treatment container.SOLUTION: A treatment container has a mounting table for mounting a substrate arranged therein, and an opening formed on an upper side of the mounting table. A lid member seals the opening of the treatment container. In the lid member, one or multiple through holes for arranging a radiation part for radiating a microwave are formed in a region facing the mounting table. A protrusion part protruding to an internal side of the treatment container along an edge of the opening is formed on a first surface that is the internal side of the treatment container. A flow channel is formed inside the protrusion part. Multiple gas holes communicating with the flow channel are formed on the first surface. A supply port communicating with the flow channel is formed on a second surface that is an external side of the treatment container. A remote plasma unit is connected to the supply port, turns a cleaning gas into plasma, and supplies it to the supply port.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus and a cover member. [Background technology]

[0002] Patent Document 1 discloses a configuration in which a remote plasma unit is disposed on the upper part of a chamber (processing vessel), and a cleaning gas is converted into plasma by the remote plasma unit and supplied into the chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-319042 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that enables cleaning by remote plasma even when a radiation unit that radiates microwaves is disposed on the upper part of a processing vessel. [Means for solving the problem]

[0005] A plasma processing apparatus according to an embodiment of the present disclosure includes a processing vessel, a lid member, and a remote plasma unit. The processing vessel has a mounting table for mounting a substrate thereon, and an opening formed above the mounting table. The lid member seals the opening of the processing vessel. The lid member has one or more through holes in which a radiation unit for radiating microwaves is disposed in an area facing the mounting table, and a protruding portion protruding into the processing vessel along the edge of the opening is formed on a first surface that is the inside of the processing vessel, a flow path is formed inside the protruding portion, a plurality of gas holes communicating with the flow path are formed on the first surface, and a supply port communicating with the flow path is formed on a second surface that is the outside of the processing vessel. The remote plasma unit is connected to the supply port, and converts a cleaning gas into plasma and supplies the plasma to the supply port. Effect of the Invention

[0006] According to the present disclosure, cleaning using remote plasma can be performed even when a radiation unit that radiates microwaves is disposed on the upper portion of a processing vessel. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view that illustrates an example of a plasma processing apparatus according to an embodiment. [Diagram 2] FIG. 2 is a diagram illustrating an example of the configuration of the ceiling wall portion according to the embodiment. [Diagram 3] FIG. 3 is a diagram illustrating an example of the configuration of the ceiling wall portion according to the embodiment. [Figure 4] FIG. 4 is an enlarged view showing an example of the configuration of the ceiling wall portion according to the embodiment. [Diagram 5] FIG. 5 is an enlarged view showing another example of the configuration of the top wall portion according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of the plasma processing apparatus and the lid member disclosed in the present application will be described in detail with reference to the drawings. Note that the plasma processing apparatus and the lid member disclosed in the present application are not limited to the embodiments.

[0009] In recent years, with the increasing density and miniaturization of semiconductor products, plasma processing apparatuses using microwaves for film formation processing are being used in the manufacturing process of semiconductor products. In such plasma processing apparatuses, a microwave radiation unit such as a microwave radiation mechanism is disposed on a cover member that seals the top surface of a processing vessel, and microwaves are radiated from the radiation unit into the processing vessel to generate plasma. By using microwaves, the plasma processing apparatus can stably generate plasma even in a high vacuum state with a relatively low pressure. Furthermore, by using microwaves, the plasma processing apparatus can generate high-density plasma.

[0010] However, when a film formation process is performed in a plasma processing apparatus, deposits are deposited on the surface of a structure in the processing vessel, such as the inner wall surface of the processing vessel. Therefore, it is considered to perform cleaning by supplying a cleaning gas converted into plasma by a remote plasma unit into the processing vessel to remove the deposits. The cleaning gas converted into plasma by the remote plasma unit is deactivated midway if the flow path becomes long. For this reason, in the conventional technology, a remote plasma unit is disposed on the upper part of the processing vessel, such as on a lid member, in order to shorten the flow path through which the plasma cleaning gas flows. However, in a plasma processing apparatus using microwaves, a radiation unit is disposed on the upper part of the processing vessel, so that a remote plasma unit cannot be disposed on the upper part of the processing vessel. Therefore, a technology is expected that enables cleaning by remote plasma even when a radiation unit that radiates microwaves is disposed on the upper part of the processing vessel.

[0011] [Embodiment] An example of a plasma processing apparatus according to the present disclosure will be described. Fig. 1 is a cross-sectional view that illustrates a schematic diagram of an example of a plasma processing apparatus 100 according to an embodiment. The plasma processing apparatus 100 illustrated in Fig. 1 includes a processing vessel 101, a mounting table 102, a gas supply mechanism 103, an exhaust device 104, and a microwave introduction device 105.

[0012] The processing vessel 101 accommodates a substrate W such as a semiconductor wafer. A mounting table 102 is provided inside the processing vessel 101. The substrate W is mounted on the mounting table 102. A gas supply mechanism 103 supplies gas into the processing vessel 101. An exhaust device 104 exhausts the inside of the processing vessel 101. A microwave introduction device 105 generates microwaves for generating plasma in the processing vessel 101, and introduces the microwaves into the processing vessel 101.

[0013] The processing vessel 101 is made of a metal material such as aluminum or an alloy thereof, and has a substantially cylindrical shape. The processing vessel 101 has a plate-shaped ceiling wall 200 and a bottom wall 113, and a side wall 112 connecting these. The processing vessel 101 has a removable ceiling wall 200 that forms the upper surface. The processing vessel 101 has an opening 101a formed above the mounting table 102. The ceiling wall 200 is formed in a shape corresponding to the opening 101a of the processing vessel 101, and seals the opening 101a. In the embodiment, the ceiling wall 200 corresponds to the cover member of the present disclosure. The inner wall of the processing vessel 101 is made of yttria (Y 2 O 3 ) or the like to provide a protective film. Microwave introduction device 105 is provided on the upper part of processing vessel 101, and generates plasma by introducing electromagnetic waves (microwaves) into processing vessel 101. Microwave introduction device 105 will be described in detail later.

[0014] The ceiling wall 200 has a plurality of through holes 201, 202 into which a microwave radiation mechanism 143 and a gas introduction nozzle 123, described later, of the microwave introduction device 105 are fitted. The side wall 112 has a transfer port 114 for transferring the substrate W between the processing vessel 101 and a transfer chamber (not shown) adjacent to the processing vessel 101. The side wall 112 is also provided with a gas introduction nozzle 124 at a position above the mounting table 102. The transfer port 114 is opened and closed by a gate valve 115.

[0015] An opening 113a is provided in the bottom wall 113, and an exhaust device 104 is provided via an exhaust pipe 116 connected to the opening 113a. The exhaust device 104 includes a vacuum pump and a pressure control valve. The inside of the processing vessel 101 is exhausted via the exhaust pipe 116 by the vacuum pump of the exhaust device 104. The pressure inside the processing vessel 101 is controlled by the pressure control valve of the exhaust device 104.

[0016] The mounting table 102 is formed in a disk shape. The mounting table 102 is made of a metal material, for example, aluminum whose surface has been anodized, or a ceramic material, for example, aluminum nitride (AlN). The substrate W is mounted on the upper surface of the mounting table 102. The mounting table 102 is supported by a cylindrical support member 120 and a base member 121 made of ceramics such as AlN, which extend upward from the center of the bottom of the processing vessel 101. A guide ring 181 for guiding the substrate W is provided on the outer edge of the mounting table 102. In addition, inside the mounting table 102, lift pins (not shown) for lifting and lowering the substrate W are provided so as to be able to protrude and retract from the upper surface of the mounting table 102.

[0017] Further, a heater 182 is embedded in the mounting table 102. The heater 182 heats the substrate W placed on the mounting table 102 by receiving power from a heater power supply 183. A thermocouple (not shown) is inserted in the mounting table 102, and the heating temperature of the substrate W can be controlled based on a signal from the thermocouple. Further, an electrode 184 having a size approximately equal to that of the substrate W is embedded in the mounting table 102 above the heater 182. A high frequency bias power supply 122 is electrically connected to the electrode 184. The high frequency bias power supply 122 applies a high frequency bias for attracting ions to the mounting table 102. Note that the high frequency bias power supply 122 may not be provided depending on the characteristics of the plasma processing.

[0018] The gas supply mechanism 103 supplies various gases into the processing vessel 101. The gas supply mechanism 103 includes gas introduction nozzles 123 and 124, gas supply pipes 125 and 126, and a gas supply unit 127. The gas introduction nozzle 123 is fitted into a through hole 202 formed in a ceiling wall 200 of the processing vessel 101. The gas introduction nozzle 124 is fitted into a through hole 112a formed in a side wall 112 of the processing vessel 101. The gas supply unit 127 is connected to each gas introduction nozzle 123 via the gas supply pipe 125. The gas supply unit 127 is connected to each gas introduction nozzle 124 via the gas supply pipe 126. The gas supply unit 127 includes supply sources of various gases. The gas supply unit 127 includes an opening / closing valve for starting and stopping the supply of various gases and a flow rate adjustment unit for adjusting the flow rate of the gas. For example, when a film forming process is performed, the gas supply unit 127 supplies a process gas containing a film forming material, and when a plasma cleaning is performed, the gas supply unit 127 supplies a cleaning gas.

[0019] The microwave introduction device 105 is provided above the processing vessel 101. The microwave introduction device 105 introduces electromagnetic waves (microwaves) into the processing vessel 101 to generate plasma.

[0020] The microwave introduction device 105 has a top wall 200 of the processing container 101, a microwave output unit 130, and an antenna unit 140. The top wall 200 functions as a top plate of the processing container 101. The microwave output unit 130 generates microwaves and distributes the microwaves to a plurality of paths for output. The antenna unit 140 introduces the microwaves output from the microwave output unit 130 into the processing container 101.

[0021] The microwave output unit 130 has a microwave power supply, a microwave oscillator, an amplifier, and a distributor. The microwave oscillator is solid-state and oscillates (e.g., PLL oscillates) a microwave at, for example, 860 MHz. The microwave frequency is not limited to 860 MHz, and frequencies in the range of 700 MHz to 10 GHz, such as 2.45 GHz, 8.35 GHz, 5.8 GHz, and 1.98 GHz, can be used. The amplifier amplifies the microwave oscillated by the microwave oscillator. The distributor distributes the microwave amplified by the amplifier to multiple paths. The distributor distributes the microwave while matching the impedance of the input side and the output side.

[0022] The antenna unit 140 has a plurality of antenna modules. Three antenna modules of the antenna unit 140 are shown in FIG. 1. Each antenna module has an amplifier section 142 and a microwave radiation mechanism 143. The microwave output section 130 generates microwaves and distributes and outputs the microwaves to each antenna module. The amplifier section 142 of the antenna module mainly amplifies the distributed microwaves and outputs them to the microwave radiation mechanism 143. The microwave radiation mechanism 143 is provided on the ceiling wall section 200. The microwave radiation mechanism 143 radiates the microwaves output from the amplifier section 142 into the processing vessel 101.

[0023] The amplifier unit 142 has a phase shifter, a variable gain amplifier, a main amplifier, and an isolator. The phase shifter changes the phase of the microwave. The variable gain amplifier adjusts the power level of the microwave input to the main amplifier. The main amplifier is configured as a solid-state amplifier. The isolator separates the reflected microwave that is reflected by the antenna unit of the microwave radiation mechanism 143 (described later) and heads toward the main amplifier.

[0024] As shown in FIG. 1, the microwave radiation mechanisms 143 are disposed on the ceiling wall 200. The microwave radiation mechanisms 143 each have a cylindrical outer conductor and an inner conductor disposed coaxially with the outer conductor within the outer conductor. The microwave radiation mechanisms 143 also have a coaxial tube having a microwave transmission line between the outer conductor and the inner conductor, and an antenna unit that radiates microwaves into the processing vessel 101. A microwave transmission plate 163 is provided on the lower surface side of the antenna unit. A lower surface of the microwave transmission plate 163 is exposed to the internal space of the processing vessel 101. The microwaves transmitted through the microwave transmission plate 163 generate plasma in the space within the processing vessel 101.

[0025] FIG. 2 is a diagram showing an example of the configuration of the ceiling wall portion 200 according to the embodiment. FIG. 2 shows a perspective view of a lower surface 200a of the ceiling wall portion 200 on the inside side of the processing vessel 101. As shown in FIG. 2, the ceiling wall portion 200 is provided with seven through holes 201 in which the microwave radiation mechanism 143 of the antenna module is disposed. In the ceiling wall portion 200, the through holes 201a are disposed so that six of them are vertices of a regular hexagon, and one is disposed as a through hole 201b at the center position of the regular hexagon. The seven through holes 201 are disposed so that adjacent through holes 201 are equally spaced. The seven through holes 201 are each disposed with a microwave radiation mechanism 143. As a result, the microwave radiation mechanism 143 is disposed at equal intervals in the ceiling wall portion 200. In addition, the ceiling wall portion 200 has a plurality of through holes 202 disposed so as to surround the periphery of the central through hole 201b. A plurality of gas introduction nozzles 123 of gas supply mechanism 103 are fitted into the plurality of through holes 202, respectively. It should be noted that the number of antenna modules provided on top wall portion 200 is not limited to seven.

[0026] Here, a flow of film formation will be briefly described. In the plasma processing apparatus 100, the substrate W is placed on the mounting table 102. The plasma processing apparatus 100 performs a film formation process on the substrate W placed on the mounting table 102. For example, the plasma processing apparatus 100 applies bias power from the high frequency bias power supply 122 to the mounting table 102. The plasma processing apparatus 100 also supplies a process gas containing a film formation material from the gas supply unit 127 into the processing vessel 101, while introducing microwaves from the microwave introduction device 105 into the processing vessel 101 to generate plasma, and forms a silicon-containing film on the substrate W.

[0027] When the plasma processing apparatus 100 performs a film formation process, deposits are deposited on the surfaces of structures in the processing vessel 101. Therefore, the plasma processing apparatus 100 performs plasma cleaning in which a cleaning gas is caused to flow into the processing vessel 101 while generating plasma to remove the deposits.

[0028] Here, plasma cleaning using microwaves from the microwave introduction device 105 is strong and may cause damage to the components inside the processing vessel 101. On the other hand, plasma cleaning using remote plasma is weak and can suppress damage to the components inside the processing vessel 101. Therefore, the plasma processing device 100 according to this embodiment has the following configuration to enable plasma cleaning using remote plasma.

[0029] 1, the ceiling wall portion 200 is formed in a shape corresponding to the opening 101a of the processing vessel 101. In this embodiment, the processing vessel 101 is formed in a substantially cylindrical shape, and the opening 101a is formed in a circular shape on the upper side of the processing vessel 101. The ceiling wall portion 200 is formed in a circular shape corresponding to the opening 101a of the processing vessel 101. The ceiling wall portion 200 seals the opening 101a of the processing vessel 101.

[0030] 1 and 2, the central portion of the lower surface 200a of the ceiling wall 200, which is located on the inside of the processing vessel 101, is formed to be substantially flat. A through hole 201 for arranging a microwave radiation mechanism 143 of the antenna module is formed in an area facing the mounting table 102 in the central portion of the lower surface 200a of the ceiling wall 200. In addition, a protruding portion 210 is formed on the lower surface 200a of the ceiling wall 200, protruding toward the inside of the processing vessel 101 along the edge of the opening 101a. The protruding portion 210 is formed in an annular shape so as to surround the central portion of the lower surface 200a.

[0031] FIG. 3 is a diagram showing an example of the configuration of the ceiling wall portion 200 according to the embodiment. FIG. 3 shows a perspective view of an upper surface 200b and a side surface 200c of the ceiling wall portion 200 on the outside side of the processing vessel 101. FIG. 3 also shows the internal configuration of the ceiling wall portion 200 with a wavy line. As shown by the wavy line, the ceiling wall portion 200 has a flow path 220 formed inside the overhanging portion 210. The flow path 220 is formed in a ring shape inside the overhanging portion 210 along the overhanging portion 210. The ceiling wall portion 200 can form a large cross section of the flow path 220 by overhanging the overhanging portion 210. The flow path 220 is formed in a rectangular shape with an inner surface that is a combination of substantially flat surfaces for ease of machining. This allows the cross section of the flow path 220 to be large. Furthermore, even when the hole diameter of the gas hole 226 is made larger on the processing vessel 101 side as described later, the cross-sectional area of ​​the flow passage 220 can be increased while ensuring a minimum wall thickness that allows the gas hole 226 of such a shape to be formed. By increasing the cross section of the flow passage 220 in this manner, the ceiling wall portion 200 improves the flow of the plasmatized cleaning gas and also suppresses deactivation of the plasmatized cleaning gas.

[0032] The ceiling wall portion 200 has a supply port 230 communicating with the flow path 220 formed on a surface facing the exterior of the processing vessel 101. In this embodiment, the supply port 230 communicating with the flow path 220 is formed on a side surface 200c of the ceiling wall portion 200. The portion of the ceiling wall portion 200 where the supply port 230 is formed is expanded toward the outer periphery. The flow path 220 also expands toward the outer periphery at the portion where the supply port 230 is formed.

[0033] The top wall portion 200 has a central flow passage formed inside the central portion surrounded by the overhanging portion 210 of the lower surface 200a, the central flow passage being connected to the flow passage 220. In this embodiment, a flow passage 221 is formed inside the central portion as the central flow passage. The flow passage 221 is formed in an annular shape so as to surround the through hole 201b. In this embodiment, a flow passage 222 connecting the flow passage 220 and the flow passage 221 is formed as the central flow passage. In this embodiment, two flow passages 222 are formed. The flow passages 221 and 222 are formed to have rectangular cross sections in order to increase the internal volume.

[0034] 1, a remote plasma unit 240 is connected to the supply port 230. A cleaning gas is supplied to the remote plasma unit 240 during cleaning. The remote plasma unit 240 converts the supplied cleaning gas into plasma and supplies it to the supply port 230. The plasmatized cleaning gas flows from the supply port 230 through the flow path 220, and also flows from the flow path 220 to the flow paths 222 and 221.

[0035] 4 is an enlarged view showing an example of the configuration of the top wall portion 200 according to the embodiment. In FIG. 4, the configuration inside the flow channel 220 of the portion expanded toward the outer periphery side near the supply port 230 of the top wall portion 200 is shown. The flow channel 220 has a step 223 formed on the inner wall on the lower surface 200a side. The step 223 is configured to include two faces 223a and 223b of different heights and a vertical face 223c between the faces 223a and 223b. In this embodiment, an inclined face 223d is further formed between the faces 223c and 223b of the step 223.

[0036] As shown in FIG. 1, FIG. 2, and FIG. 4, the ceiling wall 200 has an inclined surface 224 inclined toward the inside of the processing vessel 101 at the protruding portion 210 of the lower surface 200a with respect to a central portion surrounded by the protruding portion 210. Also, the ceiling wall 200 has an angle change formed on the lower surface 200a at a predetermined angle or more at which the propagation of the surface wave is suppressed. For example, the ceiling wall 200 has a flat surface 225 formed on a surface connected to the inner surface of the processing vessel 101 at an angle of a predetermined angle or more with respect to the inner surface at which the propagation of the surface wave is suppressed. The flat surface 225 is an example of an angle change formed on the lower surface 200a at a predetermined angle or more. In this embodiment, the flat surface 225 is formed on the outer side of the inclined surface 224. The flat surface 225 is formed so as to be perpendicular to the side wall 112. By forming the flat surface 225 in this manner, it is possible to suppress the surface wave propagating from the central portion of the ceiling wall 200 during plasma processing from propagating to the side wall 112 of the processing vessel 101. In addition, by providing a surface equivalent to the flat surface 225 so that the angle between the flat surface 225 and the side wall 112 becomes an acute angle, it is possible to further suppress the surface wave propagating to the side wall 112 of the processing vessel 101.

[0037] As shown in FIG. 2 and FIG. 4, the ceiling wall 200 has a plurality of gas holes 226 formed in the protruding portion 210 of the lower surface 200a on the inside side of the processing vessel 101, the gas holes 226 being connected to the flow path 220. The gas holes 226 are formed in two directions with respect to the inclined surface 224, penetrating the two surfaces constituting the step 223 for each direction. In this embodiment, the ceiling wall 200 has gas holes 226a penetrating in a substantially horizontal direction and gas holes 226b penetrating in a substantially vertical direction, which are arranged along the protruding portion 210. The gas holes 226a and the gas holes 226b are arranged alternately one by one at different positions in the circumferential direction so as not to overlap. The gas holes 226a are arranged in a line on the inclined surface 224 of the protruding portion 210, and each penetrates the surface 223c constituting the step 223. Gas holes 226b are provided side by side on flat surface 225 of overhanging portion 210, and penetrate each of horizontal surfaces 223a constituting step 223. In this manner, by providing ceiling wall portion 200 with substantially horizontal gas holes 226a on vertical surface 223c of step 223 and providing substantially vertical gas holes 226b on horizontal surface 223a of step 223, machining to form gas holes 226a, 226b can be easily performed.

[0038] The gas hole 226a ejects the cleaning gas in the flow path 220 toward the center. The gas hole 226b ejects the cleaning gas in the flow path 220 downward. The gas holes 226 (226a, 226b) are formed with a larger diameter on the lower surface 200a side. As a result, the hole diameter of the gas hole 226 is larger on the processing vessel 101 side, so that the ejected cleaning gas is easily diffused and abnormal discharge at the gas hole 226 is suppressed. In addition, by providing the gas hole 226a and the gas hole 226b at different positions in the ceiling wall portion 200, the cleaning gas can be ejected with less influence from each other.

[0039] 2, the ceiling wall 200 has a plurality of gas holes 227 formed in the center of the lower surface 200a of the processing vessel 101, the gas holes 227 being connected to the flow passage 221. The gas holes 227 are formed to penetrate the lower surface 200a in a direction perpendicular to the lower surface 200a. The gas holes 227 eject the cleaning gas in the flow passage 221 downward. Like the gas holes 226, the gas holes 227 are also formed to have a larger diameter on the lower surface 200a side. As a result, the gas holes 227 have a larger hole diameter on the processing vessel 101 side, which makes it easier for the ejected cleaning gas to diffuse and suppresses abnormal discharge in the gas holes 226.

[0040] Here, in the ceiling wall 200, the plasmatized cleaning gas is supplied to the flow path 220 from one supply port 230. Therefore, if the gas holes 226 and the gas holes 227 are uniformly arranged in the ceiling wall 200 with the same hole diameter, the amount of cleaning gas ejected from the supply port 230 side increases, and the distribution of the cleaning gas in the processing vessel 101 becomes non-uniform. Therefore, it is considered to change the hole diameter of the gas holes 226 and 227 according to the positions of the gas holes 226 and 227 to uniformize the ejection of the cleaning gas. However, there is a tolerance in the machining accuracy of the gas holes 226 and 227, and it is difficult to uniformize the ejection of the cleaning gas by changing the hole diameter of the gas holes 226 and 227.

[0041] Therefore, the ceiling wall portion 200 arranges the gas holes 226, 227 at different intervals so that the plasmatized cleaning gas supplied to the supply port 230 is evenly ejected from the gas holes 226, 227 into the processing vessel 101. The ceiling wall portion 200 arranges the gas holes 226 and the gas holes 227 densely on the opposite side to the supply port 230 side from the supply port 230 side. This allows the ceiling wall portion 200 to eject the cleaning gas evenly.

[0042] Next, a flow of plasma cleaning will be briefly described. The plasma processing apparatus 100 performs plasma cleaning when it is time to perform plasma cleaning, such as every time a predetermined number of substrates W are formed or every time a film is formed to a predetermined cumulative thickness. When performing plasma cleaning, the plasma processing apparatus 100 adjusts the inside of the processing vessel 101 to a predetermined pressure suitable for plasma cleaning. Then, the plasma processing apparatus 100 supplies cleaning gas to the remote plasma unit 240, which converts the cleaning gas into plasma and supplies it to the ceiling wall portion 200 from the supply port 230. The cleaning gas supplied to the supply port 230 flows through the flow path 220, and also flows from the flow path 220 to the flow paths 222 and 221, and is ejected into the processing vessel 101 from the gas hole 226 and the gas hole 227. In the plasma processing apparatus 100, plasma cleaning is performed in the processing vessel 101 by the cleaning gas supplied from the ceiling wall portion 200.

[0043] Here, in the plasma processing apparatus 100 according to this embodiment, microwave introduction devices 105 such as microwave emission mechanisms 143 are arranged in the upper part of the apparatus, and process gas is introduced between them. This layout is important in the film formation process, so it is not easy to change it.

[0044] On the other hand, the plasma processing apparatus 100 according to this embodiment can perform cleaning using remote plasma by using the ceiling wall 200 without affecting the layout of the microwave introduction device 105 and the like above the processing vessel 101.

[0045] In the above embodiment, the flat surface 225 is formed on the outer side of the inclined surface 224. However, the present invention is not limited to this. The flat surface 225 may be provided on the inner side of the inclined surface 224 or in the middle of the inclined surface 224. Furthermore, the top wall portion 200 may be configured such that the inclined surface 224 is connected to the side wall portion 112 without providing the flat surface 225.

[0046] In the above embodiment, the gas holes 226 and 227 are formed with a larger diameter on the lower surface 200a side. However, this is not limited to this. For example, one or both of the gas holes 226 and 227 may be formed with a substantially constant diameter.

[0047] Fig. 5 is an enlarged view showing another example of the configuration of the top wall portion 200 according to the embodiment. Fig. 5 shows the configuration inside the flow path 220 in the portion expanded toward the outer periphery near the supply port 230 of the top wall portion 200. In the top wall portion 200 shown in Fig. 5, the inclined surface 224 is configured to be connected to a surface that is approximately flush with the side wall portion 112. In the top wall portion 200 shown in Fig. 5, the gas hole 226 is formed with a substantially constant diameter.

[0048] In the above embodiment, the supply port 230 is formed on the side surface 200c of the processing vessel 101. However, this is not limited to this. The supply port 230 may be provided in a peripheral area of ​​the upper surface 200b that does not overlap with the microwave radiation mechanism 143.

[0049] As described above, the plasma processing apparatus 100 according to the embodiment includes the processing vessel 101, the ceiling wall 200 (lid member), and the remote plasma unit 240. The processing vessel 101 has a mounting table 102 for mounting a substrate W thereon disposed therein, and an opening 101a is formed above the mounting table 102. The ceiling wall 200 seals the opening 101a of the processing vessel 101. The ceiling wall 200 has one or more through holes 201 in which a microwave radiation mechanism 143 (radiation unit) that radiates microwaves is disposed in an area facing the mounting table 102, a protruding portion 210 that protrudes toward the inside of the processing vessel 101 along the edge of the opening 101a is formed on a lower surface 200a (first surface) that is the inside of the processing vessel 101, a flow path 220 is formed inside the protruding portion 210, a plurality of gas holes that communicate with the flow path 220 are formed on the lower surface 200a, and a supply port 230 that communicates with the flow path 220 is formed on an upper surface 200b or a side surface 200c (second surface) that is the outside of the processing vessel 101. The remote plasma unit 240 is connected to the supply port 230, and converts a cleaning gas into plasma and supplies it to the supply port 230. In this way, the plasma processing apparatus 100 can perform cleaning using remote plasma even when a radiation unit is disposed on the upper part of the processing vessel 101. In addition, by extending the extension portion 210, the plasma processing apparatus 100 can form a large cross-section of the flow path 220, which improves the flow of the cleaning gas converted into plasma and suppresses deactivation of the cleaning gas converted into plasma.

[0050] Moreover, the ceiling wall 200 has an inclined surface 224 inclined toward the inside of the processing vessel 101 at the protruding portion 210 of the lower surface 200a with respect to the central portion surrounded by the protruding portion 210, and a plurality of gas holes 226 are formed on the inclined surface 224. In this manner, by forming the inclined surface 224 inclined toward the central portion at the protruding portion 210 of the ceiling wall 200, the hole shape viewed from the direction of the opening 101a of the processing vessel 101 can be made elliptical, and the gas can be easily diffused in the processing vessel 101. Furthermore, by forming a plurality of gas holes 226 on the inclined surface 224, the radicals of the cleaning gas can be irradiated at any angle from the horizontal direction to the vertical direction. As a result, the radicals can be irradiated to the arrangement portion of the microwave radiation mechanism 143 on the lower surface 200a of the ceiling wall 200, the mounting table 102, the sidewall of the processing vessel 101, and the bottom surface.

[0051] The ceiling wall 200 has a plurality of gas holes 226 arranged in at least two directions with respect to the inclined surface 224. This allows the cleaning gas to be ejected in a plurality of directions within the processing vessel 101, and the cleaning gas can be diffused within the processing vessel 101 quickly.

[0052] Furthermore, in the ceiling wall 200, a step 223 is formed on the inner wall on the lower surface 200a side of the flow path 220, and a plurality of gas holes 226 (226a, 226b) are formed so as to penetrate two surfaces (surfaces 223a, 223c) constituting the step 223 in two directions relative to the inclined surface 224. This allows easy machining to form the gas holes 226.

[0053] Moreover, the ceiling wall 200 has a lower surface 200a with an angle change of a predetermined angle or more at which the propagation of surface waves is suppressed. Moreover, the ceiling wall 200 has a flat surface 225 formed on a surface connected to the inner surface of the processing vessel 101, the flat surface 225 being at an angle of a predetermined angle or more with respect to the inner surface at which the propagation of surface waves is suppressed. This makes it possible to suppress the surface waves propagating from the center of the ceiling wall 200 from propagating to the sidewall 112 of the processing vessel 101.

[0054] Moreover, the ceiling wall 200 has a central flow passage (flow passages 221, 222) communicating with the flow passage 220 formed inside the central portion surrounded by the overhanging portion 210 of the lower surface 200a, and a plurality of gas holes 227 communicating with the central flow passage are formed in the central portion. This allows the cleaning gas to be ejected from the central portion of the ceiling wall 200, and the cleaning gas can be diffused into the processing container 101 quickly.

[0055] Moreover, in the ceiling wall portion 200, the plurality of gas holes 226, 227 are arranged at different intervals so that the plasmatized cleaning gas supplied to the supply port 230 is evenly ejected from the plurality of gas holes 226, 227 into the processing vessel 101. This allows the cleaning gas to be evenly ejected into the processing vessel 101.

[0056] Moreover, in the ceiling wall portion 200, a plurality of gas holes 226 and 227 are densely arranged on the opposite side to the supply port 230 side with respect to the supply port 230 side. This allows the cleaning gas to be ejected into the processing vessel 101 evenly.

[0057] In addition, the gas holes 226, 227 are formed with a larger diameter on the lower surface 200a side. This makes it easier to diffuse the cleaning gas ejected from the gas holes 226, 227, and also suppresses abnormal discharge at the gas holes 226, 227.

[0058] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative and not restrictive in all respects. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims.

[0059] For example, in the above embodiment, the substrate W is a semiconductor wafer, but the present invention is not limited to this. The substrate W may be any type. [Explanation of symbols]

[0060] 100 Plasma treatment device 102 Placement table 101 Processing vessel 101a aperture 105 Microwave introduction device 140 Antenna unit 143 Microwave Radiation Mechanism 200 Ceiling wall 200a bottom side 200b top 200c side 201, 202 Through holes 210 Overhang 220 Channel 223 Step 224 Slope 225 Flat surface 226, 226a, 226b Gas hole 230 Supply port 240 Remote Plasma Unit W substrate

Claims

1. a processing vessel having a stage for placing a substrate thereon and an opening formed above the stage; a lid member for sealing the opening of the processing vessel, the lid member having one or more through holes in which a radiation unit for emitting microwaves is disposed in an area facing the mounting table, a protruding portion protruding into the processing vessel along an edge of the opening on a first surface that is on the inside of the processing vessel, a flow path being formed inside the protruding portion, a plurality of gas holes communicating with the flow path being formed on the first surface, and a supply port communicating with the flow path being formed on a second surface that is on the outside of the processing vessel; a remote plasma unit connected to the supply port, which converts the cleaning gas into plasma and supplies the plasma to the supply port; A plasma processing apparatus comprising:

2. The cover member has a central portion surrounded by the protruding portion of the first surface, and an inclined surface inclined toward the inside of the processing vessel is formed on the protruding portion, and the plurality of gas holes are formed on the inclined surface. The plasma processing apparatus according to claim 1 .

3. The cover member has the plurality of gas holes formed in at least two directions with respect to the inclined surface, the gas holes being aligned in each direction. The plasma processing apparatus according to claim 2 .

4. The cover member has a step formed in an inner wall on the first surface side of the flow path, and the gas holes are formed in two directions with respect to the inclined surface so as to penetrate through two surfaces constituting the step, respectively.

4. The plasma processing apparatus according to claim 2 or 3.

5. The cover member has a first surface on which an angle change of a predetermined angle or more is formed, at which propagation of a surface wave is suppressed.

5. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus.

6. The cover member has a flat surface formed on a surface connected to an inner surface of the processing vessel at an angle equal to or larger than a predetermined angle at which propagation of surface waves is suppressed with respect to the inner surface.

6. The plasma processing apparatus according to claim 1,

7. The cover member has a central flow passage formed inside a central portion surrounded by the protruding portion of the first surface, the central flow passage communicating with the flow passage, and a plurality of gas holes formed in the central portion communicating with the central flow passage.

7. The plasma processing apparatus according to claim 1,

8. The lid member is arranged with the plurality of gas holes spaced at different intervals so that the plasma-converted cleaning gas supplied to the supply port is uniformly ejected from the plurality of gas holes into the inside of the processing vessel.

8. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus.

9. The cover member has a structure in which the plurality of gas holes are densely arranged on the opposite side to the supply port side with respect to the supply port side.

9. The plasma processing apparatus according to claim 1,

10. The plurality of gas holes are formed with a larger diameter on the first surface side.

10. The plasma processing apparatus according to claim 1.

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