Semiconductor device manufacturing method and molding press machine

Abstract

To provide a technology that can suppress misalignment between a base plate and a semiconductor element.SOLUTION: A structure is partially enclosed by a positioning plate and a semiconductor element, a bonding member, and a base plate around the bonding member are exposed from the positioning plate to maintain the positioning of the semiconductor element and base plate. A heater is used to heat the bonding member while the piston is isostatically pressurizing the semiconductor element, bonding member, and base plate exposed from the positioning plate via the medium and bag member.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a manufacturing method for a semiconductor device and a molding press. [Background technology]

[0002] There have been proposed techniques for attaching electronic components to circuit boards using pressure-sintered joining materials. For example, Patent Document 1 proposes a technique in which the joined materials and joining materials are placed inside a plastic cover, the air inside the cover is evacuated, the cover is sealed, and then the joining materials are heated to the sintering temperature while being pressurized in a chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2003-68771 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, during processes such as exhausting the air from inside the cover and applying pressure inside the chamber, misalignment is likely to occur between the insulating substrate, which is the member to be joined, and the semiconductor element, which is also the member to be joined, resulting in a problem that the quality of the semiconductor device is compromised.

[0005] Therefore, the present disclosure has been made in consideration of the above-mentioned problems, and aims to provide a technique capable of suppressing misalignment between a base plate such as an insulating substrate and a semiconductor element. [Means for solving the problem]

[0006] The method for manufacturing a semiconductor device according to the present disclosure includes partially surrounding a structure having a bonding member containing metal powder between a semiconductor element and a base plate with a positioning plate, and exposing the semiconductor element, the bonding member, and the base plate around the bonding member from the positioning plate, thereby maintaining a positional relationship between the semiconductor element and the base plate, disposing the structure and the positioning plate inside a bag member while the positional relationship is maintained, sealing the bag member while the inside of the bag member is reduced in pressure, forming a semi-finished product, containing the semi-finished product and a medium surrounding the semi-finished product in a chamber, and heating the bonding member with a heater while a piston isotropically pressurizing the semiconductor element, the bonding member, and the base plate exposed from the positioning plate, via the medium and the bag member. Effect of the Invention

[0007] According to the present disclosure, the positional relationship between the semiconductor element and the base plate is maintained by partially surrounding the structure with the positioning plate and exposing the semiconductor element, the bonding member, and the base plate around the bonding member from the positioning plate, thereby making it possible to suppress misalignment between the base plate and the semiconductor element. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing a configuration of a semiconductor device according to a first embodiment. [Diagram 2] 2A to 2C are cross-sectional views showing a manufacturing process of the semiconductor device according to the first embodiment. [Diagram 3] 2 is a cross-sectional view showing a configuration of a molding press used in the manufacturing process of the semiconductor device according to the first embodiment. [Figure 4] 10A to 10C are cross-sectional views showing a manufacturing process of a semiconductor device according to a second embodiment. [Diagram 5] 11A to 11C are cross-sectional views showing a manufacturing process of a semiconductor device according to a third embodiment. [Figure 6] 11A to 11C are cross-sectional views showing a manufacturing process of a semiconductor device according to a fourth embodiment. [Figure 7] FIG. 13 is a cross-sectional view showing a configuration of a semiconductor device according to a fifth embodiment. [Figure 8] 13A and 13B are top and cross-sectional views showing a manufacturing process of a semiconductor device according to a fifth embodiment. [Figure 9] 11A to 11C are cross-sectional views showing a manufacturing process of a semiconductor device according to a fifth embodiment. [Figure 10] 11A to 11C are cross-sectional views showing a manufacturing process of a semiconductor device according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described with reference to the accompanying drawings. The features described in each of the following embodiments are merely examples, and not all features are necessarily required. In addition, in the following description, similar components in multiple embodiments are given the same or similar reference numerals, and different components are mainly described. In addition, in the following description, specific positions and directions such as "upper", "lower", "left", "right", "front" or "back" do not necessarily correspond to positions and directions in actual implementation.

[0010] <Embodiment 1> Fig. 1 is a cross-sectional view showing the configuration of a semiconductor device according to the present embodiment 1. The semiconductor device in Fig. 1 is, for example, a power semiconductor device.

[0011] The semiconductor device in FIG. 1 includes a semiconductor element 1, bonding members 2 and 4, an insulating substrate 3 that is a base plate, a heat sink 5, metal wires 6, a case 7, an adhesive 8, a sealing member 9, and electrodes 10.

[0012] The insulating substrate 3 includes an insulating portion 3a, which is an insulating layer, and a circuit pattern portion 3b. The material of the insulating portion 3a is, for example, alumina (Al 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ) and other inorganic ceramic materials.

[0013] The circuit pattern portion 3b is provided on both sides of the insulating portion 3a. The material of the circuit pattern portion 3b is, for example, copper, aluminum, or an alloy thereof, and is preferably a material with high electrical conductivity and high thermal conductivity.

[0014] The semiconductor element 1 is mounted on an insulating substrate 3 via a bonding member 2. The semiconductor element 1 is, for example, a power semiconductor element such as a metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse conducting IGBT (RC-IGBT), a Schottky barrier diode (SBD), or a PN junction diode (PND). The material of the semiconductor element 1 may be ordinary silicon (Si), or may be a wide band gap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or diamond. When the material of the semiconductor element 1 is a wide band gap semiconductor, the semiconductor element 1 can operate stably under high temperatures and high voltages, and can achieve high switching speeds.

[0015] A semiconductor device includes at least one semiconductor element 1. For example, assuming that a configuration including an IGBT and a diode connected in anti-parallel thereto is one unit, a one-element configuration consisting of one unit, a two-element configuration consisting of two units, or a six-element configuration consisting of six units may be applied to the circuit configuration of the semiconductor device. Which configuration is applied to the circuit configuration of the semiconductor device is determined by the specifications of the semiconductor device.

[0016] The bonding member 2 bonds the semiconductor element 1 to the circuit pattern portion 3b on the upper side of the insulating substrate 3. The bonding member 2 is a metal bonding member such as a sintered material formed from metal powder such as nano silver and nano copper particles.

[0017] The insulating substrate 3 is mounted on a heat sink 5 via a bonding member 4. The material of the heat sink 5 may include a metal material such as copper, aluminum, or a copper-molybdenum alloy (CuMo), or may include a composite material such as a silicon carbide-aluminum composite (AlSiC) or a silicon carbide-magnesium composite (MgSiC). The material of the heat sink 5 may also include an organic material such as an epoxy resin, a polyimide resin, an acrylic resin, or a polyphenylene sulfide (PPS) resin.

[0018] The bonding member 4 bonds the heat sink 5 to the circuit pattern portion 3b on the lower side of the insulating substrate 3. The material of the bonding member 4 is, for example, a solder made of lead (PB) or tin (Sn) or a solder alloy.

[0019] The case 7 surrounds the sides of the semiconductor element 1, the insulating substrate 3, and the heat sink 5. The material of the case 7 may be any material having electrical insulation properties, such as polyphenylene sulfide (PPS), polybutylene terephthalate (PBT), polyethylene terephthalate-polybutylene terephthalate (PET-PBT) resin, etc.

[0020] The adhesive 8 bonds the peripheral portion of the heat sink 5 to the lower portion of the case 7. A silicone-based adhesive is generally used as the adhesive 8. The material of the adhesive 8 may be, for example, an acrylic resin or an epoxy resin.

[0021] The electrode 10 is provided integrally with the case 7, with one end of the electrode 10 provided on the semiconductor element 1 side of the case 7, and the other end of the electrode 10 provided on the opposite side of the case 7 to the semiconductor element 1. The material of the electrode 10 is a metal mainly composed of, for example, copper (Cu) or an alloy thereof. It is preferable, but not essential, for the surface of the electrode 10 to be provided with a plating layer of nickel (Ni) or the like.

[0022] The metal wires 6 selectively connect the semiconductor element 1, the upper circuit pattern portion 3b, and the electrodes 10. The metal wires 6 are metal wiring made of, for example, aluminum (Al), copper (Cu), or an alloy thereof.

[0023] The sealing member 9 is provided in the space of the case 7 and seals the above assembly as a sealed body. The material of the sealing member 9 is, for example, an insulating resin such as silicone gel or epoxy resin. Although not shown, a control board connected to the semiconductor element 1 by wiring may be provided inside the sealing member 9.

[0024] <Manufacturing method> 2A to 2C are cross-sectional views showing a manufacturing process of the semiconductor device according to the present embodiment 1. Specifically, Fig. 2A to 2C are cross-sectional views showing a process of forming a semi-finished product that is a pressurized product.

[0025] As shown in step (1), a bonding member containing a metal powder such as silver or copper and an organic solvent is applied to the upper surface of the insulating substrate 3 by a dispense method or a print mask method, and the bonding member is heated to about 100°C to 150°C. As a result, the organic solvent is volatilized and removed, and a bonding member 2 containing the metal powder is formed. Note that minute amounts of the organic solvent may remain in the bonding member 2.

[0026] Then, the lower part of the insulating substrate 3 is fitted into the recess of the first positioning plate 11 a having a recess slightly larger than the outer shape of the insulating substrate 3 .

[0027] Next, as shown in step (2), a second positioning plate 11b having a recess slightly larger than the outer shape of the insulating substrate 3 and a through hole slightly larger than the outer shape of the semiconductor element 1 is attached to the structure obtained in step (1). For example, after the semiconductor element 1 is mounted on the bonding member 2, the upper part of the insulating substrate 3 may be fitted into the recess of the second positioning plate 11b while fitting the semiconductor element 1 and the bonding member 2 into the through hole of the second positioning plate 11b. Also, for example, the insulating substrate 3 may be fitted into the recess of the second positioning plate 11b while being placed on the bonding member 2 on the through hole side of the second positioning plate 11b, and then the semiconductor element 1 may be fitted into the through hole and mounted on the bonding member 2.

[0028] The first positioning plate 11a and the second positioning plate 11b as described above can maintain the positional relationship between the semiconductor element 1 and the insulating substrate 3, that is, can suppress changes in the relative positions of the semiconductor element 1 and the insulating substrate 3. Hereinafter, the structure in which the first positioning plate 11a and the second positioning plate 11b are assembled may be referred to as the positioning plate 11.

[0029] As described above, in step (2), the structure 21 in which the bonding members 2 are provided between the semiconductor element 1 and the insulating substrate 3 is partially surrounded by the positioning plate 11, and the semiconductor element 1, the bonding members 2, and the insulating substrate 3 around the bonding members 2 are exposed from the positioning plate 11. This maintains the positional relationship between the semiconductor element 1 and the insulating substrate 3. The material of the positioning plate 11 may contain at least one of metal, resin, and carbon. With this configuration, the heat resistance and mechanical strength of the positioning plate 11 can be increased, making it possible to repeatedly use the positioning plate 11 and reducing the manufacturing cost of the semiconductor device.

[0030] Next, as shown in step (3), while maintaining the positional relationship between the semiconductor element 1 and the insulating substrate 3, the structure 21 and the positioning plate 11 are placed inside the bag member 13. In the present embodiment 1, the bag member 13 is a resin bag. The material of the resin bag is, for example, polytetrafluoroethylene (PTFE) having heat resistance of 200°C or more and ductility.

[0031] Next, as shown in step (4), the bag member 13 is sealed in a state in which the inside of the bag member 13 is degassed and reduced pressure, thereby forming a semifinished product 22. The semifinished product 22 according to the first embodiment includes the structure 21, the positioning plate 11, and the bag member 13 that seals the structure 21 and the positioning plate 11.

[0032] Fig. 3 is a cross-sectional view showing the configuration of a molding press 14 used in the manufacturing process of the semiconductor device according to the present embodiment 1. The molding press 14 presses the semi-finished product 22 formed in step (4) of Fig. 2 as the product to be pressed. The molding press 14 includes a chamber 14a, a support stand 14b, a piston 14c, and a heater 14d.

[0033] The chamber 14a includes molds 14a1 and 14a2, and has a space for accommodating the semi-finished product 22 and the medium 16. The medium 16 is, for example, silicone oil or a fluorine-based active liquid that can be used at temperatures between 250°C and 300°C.

[0034] The support stand 14b is provided within the space of the chamber 14a, and the semi-finished product 22 is mounted on the support stand 14b while being surrounded by the medium 16. Since the semi-finished product 22 is sealed by the bag member 13, even if the semi-finished product 22 is surrounded by the medium 16, the medium 16 is prevented from entering the inside of the bag member 13.

[0035] The piston 14c moves up and down relative to the chamber 14a while sealing the medium 16 in the chamber 14a. As described above, in the semifinished product 22, the semiconductor element 1, the bonding members 2, and the insulating substrate 3 are covered by the bag member 13 while being exposed from the through-hole of the positioning plate 11. Therefore, when the piston 14c pressurizes the medium 16, the medium 16 isotropically presses the semiconductor element 1, the bonding members 2, and the insulating substrate 3 exposed from the positioning plate 11 via the bag member 13.

[0036] That is, the piston 14c isotropically pressurizes the semiconductor element 1, the bonding members 2, and the insulating substrate 3 exposed from the positioning plate 11 through the medium 16 and the bag member 13. The magnitude of the isotropic pressure is, for example, 20 Pa or more and 50 MPa or less. In this way, by isotropically pressurizing the bonding members 2 and their surroundings, it is possible to reduce the diameter of gaps (i.e., voids) generated in the bonding members 2. In addition, since the isotropic pressure to the bonding members 2 is applied on the projection surface of the semiconductor element 1, unevenness in density between the ends and the center of the bonding members 2 can be suppressed. This is effective when the area of ​​the semiconductor element 1 is large.

[0037] The heater 14d is provided in the chamber 14a. The heater 14d heats the joining members 2 by heating the inside of the chamber 14a to a temperature of, for example, 250° C. or more and 300° C. or less while the piston 14c is isotropically pressing.

[0038] In the molding press 14 configured as above, the semi-finished product 22 and the medium 16 surrounding the semi-finished product 22 are housed in the chamber 14a. Thereafter, the heater 14d heats the bonding member 2 while the piston 14c isotropically presses the insulating substrate 3, the bonding member 2, and the semiconductor element 1 exposed from the positioning plate 11 through the medium 16 and the bag member 13. By such operation of the molding press 14, the bonding member 2 is sintered with small diameter voids and a uniform density, so that the semiconductor element 1 and the insulating substrate 3 can be sinter-bonded with high quality and at low cost.

[0039] After the bonding is completed, the semi-finished product 22 is removed from the chamber 14a, the bag member 13 is unsealed, the structure 21 and the positioning plate 11 are removed from the bag member 13, the positioning plate 11 is disassembled, and the structure 21 is removed from the positioning plate 11. Then, the structure 21, that is, the semiconductor element 1, the bonding members 2, and the insulating substrate 3, are subjected to various processes such as wire bonding and sealing processes, thereby completing the semiconductor device of FIG.

[0040] <Summary of the first embodiment> Generally, when an organic solvent is volatilized and removed from the bonding material applied to the insulating substrate 3, voids inside the bonding material can be suppressed, but the adhesiveness of the surface of the bonding material decreases, so that misalignment between the semiconductor element 1 and the insulating substrate 3 is likely to occur. In contrast, in the present embodiment 1, the depressurization step (i.e., exhaust step) of the bag member 13 and the pressurization step in the chamber 14a are performed in a state in which the positional relationship between the semiconductor element 1 and the insulating substrate 3 is maintained by the positioning plate 11. Therefore, misalignment between the semiconductor element 1 and the insulating substrate 3 can be suppressed, and the accuracy of aligning the semiconductor element 1 with respect to the insulating substrate 3 can be improved. As a result, the quality of the semiconductor device can be improved, and the cost of the semiconductor device can be reduced.

[0041] In the first embodiment, the piston 14c isotropically presses the semiconductor element 1, the bonding member 2, and the insulating substrate 3 exposed from the positioning plate 11 through the medium 16 and the bag member 13. With this configuration, it is possible to form a bonding member 2 in which the voids are reduced in diameter and the density is uniform. As a result, it is possible to uniformize the heat dissipation and electrical resistance of the semiconductor device, thereby extending the bonding life of the semiconductor device. In addition, it is not necessary to provide a protective member on the upper surface of the semiconductor element 1, thereby reducing the manufacturing cost of the semiconductor device.

[0042] Although not shown, other electronic components may be mounted on the bonding member 2 in the same manner as the semiconductor element 1, and the other electronic components and the insulating substrate 3 may be positioned by the positioning plate 11. With such a configuration, the same effect as that of the semiconductor element 1 can be obtained for the other electronic components. This also applies to the other embodiments.

[0043] <Modification> In the first embodiment, the medium 16 is described as being silicone oil or a fluorine-based active liquid, but is not limited thereto. For example, the medium 16 may be an inert gas such as argon or nitrogen. With this configuration, it is not necessary to provide a discharge mechanism for the liquid medium 16 in the chamber 14a, so that the cost of the molding press 14 can be reduced. In addition, it is possible to prevent the liquid medium 16 from entering the inside of the bag member 13, so that the quality of the semiconductor device can be improved.

[0044] <Embodiment 2> 4A to 4C are cross-sectional views showing a manufacturing process of a semiconductor device according to the second embodiment.

[0045] In the present embodiment 2, steps similar to steps (1) to (4) in Fig. 2 described in the embodiment 1 are performed. As a result, the structure 21 and the positioning plate 11 are sealed in the resin bag 13a as shown in Fig. 4. Then, as shown in Fig. 4, the structure 21, the positioning plate 11, and the resin bag 13a are placed inside another resin bag 13b, and the resin bag 13a is sealed with the resin bag 13b.

[0046] That is, in the present embodiment 2, the bag member 13 is two nested resin bags 13a, 13b. The material of each of the two resin bags 13a, 13b is, for example, polytetrafluoroethylene (PTFE) having heat resistance of 200° C. or more and ductility. Note that the bag member 13 may be three or more nested resin bags.

[0047] <Summary of the second embodiment> According to the present embodiment 2 as described above, the bag member 13 is a plurality of nested resin bags. With such a configuration, when the semifinished product 22 is surrounded by the medium 16 in Fig. 3, it is possible to further suppress the medium 16 from entering the inside of the bag member 13, thereby improving the quality of the semiconductor device.

[0048] <Embodiment 3> Fig. 5 is a cross-sectional view showing a manufacturing process of a semiconductor device according to the present embodiment 3. Specifically, the process in Fig. 5 corresponds to the process (3) and the process (4) in Fig. 2 described in the embodiment 1.

[0049] As shown in Fig. 5, in the third embodiment, the bag member 13 includes two or more metal foils 13c bonded together. That is, the bag member 13 does not have to be bag-shaped from the beginning. The metal foil 13c is made of a material having good thermal conductivity and electrical conductivity. For bonding the metal foil 13c, an adhesive member 13d such as a heat-resistant silicone adhesive, an epoxy adhesive, or a polyimide adhesive may be used, or welding, high-temperature brazing, ultrasonic bonding, or the like may be used.

[0050] <Summary of the Third Embodiment> According to the third embodiment as described above, the bag member 13 includes two or more metal foils 13c that are bonded together. With this configuration, the semi-finished product 22 can be stably heated and cooled in the process of the molding press machine 14 in Fig. 3 and before and after the process, thereby improving the quality of the joining member 2 that is subjected to the heat treatment. In addition, electrostatic breakdown of the gate oxide film of the semiconductor element 1, which may occur when a resin bag is used for the bag member 13, is suppressed, thereby reducing the cost of the semiconductor device.

[0051] <Fourth embodiment> Fig. 6 is a cross-sectional view showing a manufacturing process of a semiconductor device according to the present embodiment 4. Specifically, the process in Fig. 6 corresponds to the process (1) and process (2) in Fig. 2 described in the embodiment 1.

[0052] 6, the positioning plate 11 is configured to collectively maintain the positional relationship between the semiconductor elements 1 and the insulating substrate 3 of each of the multiple structures 21. That is, a plurality of recesses are provided in the first positioning plate 11a, and a plurality of recesses and a plurality of through holes are provided in the second positioning plate 11b. The manufacturing method according to the fourth embodiment is similar to the manufacturing method according to the first embodiment, except that a plurality of structures 21 are incorporated into the positioning plate 11.

[0053] <Summary of the fourth embodiment> According to the fourth embodiment as described above, positioning plate 11 collectively maintains the positional relationship between semiconductor elements 1 and insulating substrates 3 of each of multiple structures 21. With such a configuration, the manufacturing method described in the first embodiment can be applied to multiple structures 21, thereby improving productivity.

[0054] <Fifth Preferred Embodiment> Fig. 7 is a cross-sectional view showing the configuration of a semiconductor device according to the present embodiment 5. The semiconductor device in Fig. 7 includes a semiconductor element 1, bonding members 2a and 2b, an insulating substrate 3, a heat sink 5, a metal wire 6, a sealing member 9, and electrodes 10a and 10b.

[0055] The insulating substrate 3 includes an insulating portion 3a and a metal film 3c provided on the upper surface of the insulating portion 3a. The material of the insulating portion 3a may be an organic material such as an epoxy resin, a polyimide resin, an acrylic resin, or a polyphenylene sulfide (PPS) resin, or may be an alumina (Al 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4 The material of the metal film 3c may be, for example, copper, aluminum, or an alloy thereof.

[0056] The heat sink 5 is mounted on the insulating substrate 3. The material of the heat sink 5 is the same as that of the heat sink 5 according to the first embodiment.

[0057] The semiconductor element 1 is mounted on a heat sink 5 via a bonding member 2a. The material of the semiconductor element 1 is the same as that of the semiconductor element 1 according to the first embodiment.

[0058] The bonding member 2a bonds the semiconductor element 1 to the heat sink 5. The material of the bonding member 2a is the same as the material of the bonding member 2 according to the first embodiment.

[0059] The electrode 10a is mounted on the semiconductor element 1 via a bonding member 2b. The electrode 10b is connected to the semiconductor element 1 via a metal wire 6. The materials of the electrodes 10a and 10b are the same as the material of the electrode 10 according to the first embodiment. The material of the bonding member 2b is the same as the material of the bonding member 2 according to the first embodiment. The material of the metal wire 6 is the same as the material of the metal wire 6 according to the first embodiment.

[0060] The assembly described above is sealed with the sealing member 9. The material of the sealing member 9 is, for example, an insulating resin such as epoxy resin. Although not shown, a control board connected to the semiconductor element 1 by wiring may be provided inside the sealing member 9.

[0061] <Manufacturing method> Fig. 8 is a top view and a cross-sectional view showing the manufacturing process of a semiconductor device according to the fifth embodiment, and Fig. 9 is a cross-sectional view showing the manufacturing process of a semiconductor device according to the fifth embodiment. Specifically, the process of Fig. 8 corresponds to the process (1) and the process (2) of Fig. 2 described in the first embodiment, and the process of Fig. 9 corresponds to the process (4) of Fig. 2 described in the first embodiment.

[0062] In step (1), similarly to step (1) in the first embodiment, a bonding member containing a metal powder such as silver or copper and an organic solvent is applied to the upper surface of the heat sink 5 by a dispense method or a print mask method, and the organic solvent is volatilized and removed to form a bonding member 2a containing metal powder. Then, a semiconductor element 1 is mounted on the bonding member 2a. Then, a bonding member containing a metal powder such as silver or copper and an organic solvent is applied to the upper surface of the semiconductor element 1 by a dispense method or a print mask method, and the organic solvent is volatilized and removed to form a bonding member 2b containing metal powder.

[0063] Next, in step (2), as shown in Fig. 8, the heat sink 5 is fitted into a recess in the first positioning plate 11a, which has a recess slightly larger than the outer shape of the heat sink 5. Then, the second positioning plate 11b, which has a through hole slightly larger than the outer shape of the semiconductor element 1, is placed. Then, the metal plate 10c, which will become the electrodes 10a, 10b, is mounted on the first positioning plate 11a and the bonding member 2b. The holes in the metal plate 10c are fitted into the pins 11a1 provided in the first positioning plate 11a.

[0064] The second positioning plate 11b may be separable into a plurality of pieces as shown in the top view of Fig. 8. With this configuration, the second positioning plate 11b can be easily attached to and detached from the underside of the metal plate 10c.

[0065] According to the first positioning plate 11a and the second positioning plate 11b as described above, the positional relationship between the semiconductor element 1, the heat sink 5, and the metal plate 10c can be maintained. Hereinafter, the structure in which the first positioning plate 11a and the second positioning plate 11b are assembled may be referred to as the positioning plate 11.

[0066] In the above step (2), the structure 21 in which the bonding members 2a are provided between the semiconductor element 1 and the heat sink 5 is partially surrounded by the positioning plate 11, and the semiconductor element 1, the bonding members 2a, and the heat sink 5 around the bonding members 2a are exposed from the positioning plate 11. This maintains the positional relationship between the semiconductor element 1 and the heat sink 5. The material of the positioning plate 11 is the same as the material of the positioning plate 11 in the first embodiment.

[0067] Then, in step (3), similar to step (3) in the first embodiment, the structure 21 and the positioning plate 11 are placed inside the bag member 13 while maintaining the positional relationship between the semiconductor element 1 and the heat sink 5.

[0068] Next, in step (4) as shown in FIG. 9, similarly to step (4) in the first embodiment, the bag member 13 is sealed in a state in which the inside of the bag member 13 is degassed and reduced in pressure, thereby forming a semi-finished product 22.

[0069] 3, the heater 14d heats the bonding members 2a while the piston 14c isotropically presses the heat sink 5 exposed from the positioning plate 11, the bonding members 2a, and the semiconductor element 1 through the medium 16 and the bag member 13. As a result, the bonding members 2a are sintered with small voids and a uniform density, so that the semiconductor element 1 and the heat sink 5 can be sinter-bonded with high quality and at low cost.

[0070] In the fifth embodiment, not only the joining member 2a but also the joining member 2b are positioned, pressed, and heated in the same manner as the joining member 2a. As a result, the joining member 2b is sintered with small voids and a uniform density, so that the semiconductor element 1 and the metal plate 10c can be sinter-bonded with high quality and at low cost.

[0071] After the bonding is completed, the semi-finished product 22 is removed from the chamber 14a, the bag member 13 is unsealed, the structure 21 and the positioning plate 11 are removed from the bag member 13, the positioning plate 11 is disassembled, and the structure 21 is removed from the positioning plate 11. Then, the structure 21, that is, the semiconductor element 1, the bonding members 2, and the heat sink 5, are subjected to wire bonding and sealing processes.

[0072] Fig. 10 is a cross-sectional view showing a sealing process which is one of the manufacturing processes of the semiconductor device according to the fifth embodiment. As shown in Fig. 10, after the heat sink 5 to which the semiconductor element 1 is bonded and the insulating substrate 3 are placed in the space in the mold die 23, the uncured heat-resistant insulating resin 9a is poured into the space by the piston 24. Then, the heat-resistant insulating resin 9a is cured while sealing the semiconductor element 1 and the like, thereby forming the sealing member 9. Then, various processes such as a cutting process for forming the electrodes 10a and 10b from the metal plate 10c are performed, thereby completing the semiconductor device of Fig. 7.

[0073] <Summary of the fifth embodiment> According to the fifth embodiment as described above, the depressurization step (i.e., exhaust step) of the bag member 13 and the pressurization step in the chamber 14a are performed in a state in which the positional relationship between the semiconductor element 1 and the heat sink 5 is maintained by the positioning plate 11. Therefore, it is possible to suppress misalignment between the semiconductor element 1 and the heat sink 5, and therefore it is possible to improve the accuracy of aligning the semiconductor element 1 with the heat sink 5. As a result, it is possible to improve the quality of the semiconductor device and reduce the cost of the semiconductor device.

[0074] According to the fifth embodiment, the piston 14c isotropically presses the semiconductor element 1, the bonding member 2, and the heat sink 5 exposed from the positioning plate 11 through the medium 16 and the bag member 13. This configuration makes it possible to form a bonding member 2 with small voids and a uniform density. As a result, the heat dissipation and electrical resistance of the semiconductor device can be made uniform, and the bonding life of the semiconductor device can be extended. In addition, there is no need to provide a protective member for the upper surface of the semiconductor element 1, and therefore the manufacturing cost of the semiconductor device can be reduced.

[0075] According to the fifth embodiment, not only the bonding member 2a but also the bonding member 2b is positioned, pressed, and heated in the same manner as the bonding member 2a. With this configuration, the bonding member 2b can be processed in parallel with the processing of the bonding member 2a, thereby reducing the manufacturing cost of the semiconductor device.

[0076] It should be noted that the embodiments and modifications may be freely combined, and the embodiments and modifications may be modified or omitted as appropriate.

[0077] Various aspects of the present disclosure are summarized below as appendices.

[0078] (Appendix 1) a structure in which a bonding member containing a metal powder is provided between a semiconductor element and a base plate is partially surrounded by a positioning plate, and the semiconductor element, the bonding member, and the base plate around the bonding member are exposed from the positioning plate, thereby maintaining a positional relationship between the semiconductor element and the base plate; While maintaining the positional relationship, the structure and the positioning plate are disposed inside the bag member; forming a semi-finished product by sealing the bag member while the pressure inside the bag member is reduced; Containing the blank and a medium surrounding the blank in a chamber; A method for manufacturing a semiconductor device, comprising: heating the bonding members with a heater while a piston is isotropically pressurizing the semiconductor element, the bonding members, and the base plate exposed from the positioning plate through the medium and the bag member.

[0079] (Appendix 2) 2. The method for manufacturing a semiconductor device according to claim 1, wherein the bag member is one resin bag or a plurality of nested resin bags.

[0080] (Appendix 3) 2. The method for manufacturing a semiconductor device according to claim 1, wherein the bag member includes two or more metal foils bonded together.

[0081] (Appendix 4) The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the positioning plate collectively maintains the positional relationship between the semiconductor element and the base plate of each of the multiple structures.

[0082] (Appendix 5) 5. The method for manufacturing a semiconductor device according to claim 1, wherein the base plate is at least one of an insulating substrate, a heat sink, and a metal plate.

[0083] (Appendix 6) 6. The method for manufacturing a semiconductor device according to claim 1, wherein a material of the positioning plate includes at least one of metal, resin, and carbon.

[0084] (Appendix 7) 7. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the medium is silicone oil or an inert gas.

[0085] (Appendix 8) A molding press machine for pressurizing a pressurized object, The pressurized product is a structure in which a bonding member containing a metal powder is provided between a semiconductor element and a base plate is partially surrounded by a positioning plate, and the semiconductor element, the bonding member, and the base plate around the bonding member are exposed from the positioning plate, thereby maintaining a positional relationship between the semiconductor element and the base plate; While maintaining the positional relationship, the structure and the positioning plate are disposed inside the bag member; The bag member is sealed while the inside of the bag member is depressurized. It is formed by a chamber containing the pressurized article and a medium surrounding the pressurized article; a piston that applies isotropic pressure to the semiconductor element, the bonding member, and the base plate exposed from the positioning plate via the medium and the bag member; a heater for heating the joining member while the piston is isotropically pressing the joining member; A molding press machine equipped with: [Explanation of symbols]

[0086] 1 semiconductor element, 2, 2a, 2b bonding members, 3 insulating substrate, 5 heat sink, 10c metal plate, 12 positioning plate, 13 bag member, 13a, 13b resin bag, 14 molding press, 14a chamber, 14c piston, 14d heater, 16 medium, 21 structure, 22 semi-finished product.

Claims

1. a structure in which a bonding member containing a metal powder is provided between a semiconductor element and a base plate is partially surrounded by a positioning plate, and the semiconductor element, the bonding member, and the base plate around the bonding member are exposed from the positioning plate, thereby maintaining a positional relationship between the semiconductor element and the base plate; While maintaining the positional relationship, the structure and the positioning plate are disposed inside the bag member; forming a semi-finished product by sealing the bag member while the pressure inside the bag member is reduced; Containing the blank and a medium surrounding the blank in a chamber; A method for manufacturing a semiconductor device, comprising: heating the bonding members with a heater while a piston is isotropically pressurizing the semiconductor element, the bonding members, and the base plate exposed from the positioning plate through the medium and the bag member.

2. 2. The method of manufacturing a semiconductor device according to claim 1, A method for manufacturing a semiconductor device, wherein the bag member is one resin bag or a plurality of nested resin bags.

3. 2. The method of manufacturing a semiconductor device according to claim 1, The bag member includes two or more metal foils bonded together.

4. 3. A method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: The method for manufacturing a semiconductor device, wherein the positioning plate collectively maintains the positional relationship between the semiconductor element and the base plate of each of the multiple structures.

5. 3. A method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: The method for manufacturing a semiconductor device, wherein the base plate is at least one of an insulating substrate, a heat sink, and a metal plate.

6. 3. A method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: A method for manufacturing a semiconductor device, wherein the material of the positioning plate includes at least one of metal, resin, and carbon.

7. 3. A method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: The method for manufacturing a semiconductor device, wherein the medium is silicone oil or an inert gas.

8. A molding press machine for pressurizing a pressurized object, The pressurized product is a structure in which a bonding member containing a metal powder is provided between a semiconductor element and a base plate is partially surrounded by a positioning plate, and the semiconductor element, the bonding member, and the base plate around the bonding member are exposed from the positioning plate, thereby maintaining a positional relationship between the semiconductor element and the base plate; While maintaining the positional relationship, the structure and the positioning plate are disposed inside the bag member; The bag member is sealed while the inside of the bag member is depressurized. It is formed by a chamber containing the pressurized article and a medium surrounding the pressurized article; a piston that applies isotropic pressure to the semiconductor element, the bonding member, and the base plate exposed from the positioning plate via the medium and the bag member; a heater for heating the joining member while the piston is isotropically pressing the joining member; A molding press machine equipped with:

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