Substrate Processing Device

Abstract

According to an embodiment of the present invention, a substrate processing apparatus includes a process chamber, an upper electrode disposed inside the process chamber at an upper portion and spaced apart from an upper surface of the process chamber, a lower electrode disposed below the upper electrode at a predetermined distance from the upper electrode and facing the upper electrode, a substrate mounting means electrically grounded and disposed below the lower electrode at a predetermined distance from the lower electrode and facing the lower electrode, for mounting a substrate thereon, and a variable capacitor connected between the lower electrode and ground or between the lower electrode and an output terminal of an RF power supply.

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus that distributes RF power from one RF power source to form a first plasma and a second plasma in different regions. [Background technology]

[0002] The substrate processing apparatus of the prior art includes a substrate rest means that acts as an electrode for supporting a substrate, and an upper electrode that is disposed vertically spaced apart from the substrate rest means and facing each other. When an RF power source is applied to the upper electrode, a capacitively coupled plasma is formed between the upper electrode and the substrate rest means. The substrate placed on the substrate rest means is subjected to plasma processing. The plasma decomposes a reactive gas to deposit a thin film on the substrate. The upper electrode acts as a gas supply unit, and a mixed gas composed of a plurality of gases provided from the upper electrode is ejected by a plurality of nozzles formed on a lower surface of the upper electrode. Accordingly, the plurality of nozzles eject gas uniformly onto the large-area substrate. The upper electrode serves both as an ejection structure and an electrode. The shape of the surface of the upper electrode and the shape of the nozzle are adjusted to provide a control effect of large-area film quality and film formation uniformity. However, the bulk plasma formed between the upper electrode and the substrate rest means is limited in controlling large-area film quality and film formation uniformity due to diffusion characteristics.

[0003] In recent years, the growing demand for large-area flat panel displays has created a demand for high-quality organic film formation. In addition, the need for atomic layer deposition (ALD), which forms thin films by alternately injecting two gases, is growing in large-area encapsulation processes and oxide semiconductor deposition processes. DISCLOSURE OF THEINVENTION [Problem to be solved by the invention]

[0004] The present invention provides a substrate processing apparatus for forming a first plasma and a second plasma in different regions by distributing RF power between an upper electrode and a lower electrode stacked on each other. The substrate processing apparatus is a parallel plate capacitively coupled plasma apparatus including an upper electrode including a protrusion, a lower electrode including an opening aligned with the protrusion, and a grounded substrate placement means. A first gas is provided to a substrate through a first gas path formed in the upper electrode, and a first plasma is formed between the protrusion of the upper electrode and the substrate placement means. A second gas is provided to a substrate through a second gas path between the upper electrode and the lower electrode, and a second plasma is formed between the lower electrode and the substrate placement means. The first plasma and the second plasma are each formed by receiving power distribution from one RF power source. The power distribution ratio for forming the first plasma and the second plasma is achieved by adjusting the capacitance of a variable capacitor connected between the lower electrode and ground, or connected between the upper electrode and an output terminal of an RF power source and the lower electrode.

[0005] The technical problem to be solved by the present invention is to provide a substrate processing apparatus for performing plasma-assisted atomic layer deposition by arbitrarily distributing RF power to an upper electrode and a lower electrode, respectively. [Means for solving the problem]

[0006] According to one embodiment of the present invention, a substrate processing apparatus includes a process chamber, an upper electrode having a plurality of protrusions protruding downwardly and spaced apart from an upper surface of an upper portion of the process chamber, a lower electrode disposed below the upper electrode, a substrate mounting means that is electrically grounded and disposed to face the lower electrode and mounts a substrate thereon, and a variable capacitor connected between the lower electrode and ground or between the lower electrode and an RF power source.

[0007] In one embodiment of the present invention, the upper electrode is connected to the RF power source to form a first plasma between the protrusion and the substrate placement means, and the RF power forms a second plasma between the lower electrode and the substrate placement means.

[0008] In one embodiment of the present invention, a first gas is provided to the substrate placement means by passing through a first nozzle formed in the protrusion, and a second gas is supplied to the substrate placement means by passing through a second nozzle formed on a lower surface of the upper electrode and through the opening.

[0009] In an embodiment of the present invention, the protrusions and the first nozzles are periodically arranged in a matrix, and the second nozzles are periodically arranged in a matrix, spaced apart from the first nozzles.

[0010] In one embodiment of the present invention, the semiconductor device further includes a reactive element connected between the upper electrode and the lower electrode.

[0011] In one embodiment of the present invention, an output terminal of the RF power supply is connected to the upper electrode, RF power of the RF power supply is transmitted to the lower electrode through a parasitic capacitor between the upper electrode and the lower electrode, and the variable capacitor is connected between the lower electrode and ground.

[0012] In one embodiment of the present invention, an output terminal of the RF power supply is connected to the upper electrode, the variable capacitor is connected between the upper electrode and the lower electrode, and RF power of the RF power supply is transmitted to the lower electrode through a parasitic capacitor between the upper electrode and the lower electrode and the variable capacitor.

[0013] In one embodiment of the present invention, the semiconductor device further includes a fixed inductor connected between the upper electrode and the lower electrode.

[0014] According to an embodiment of the present invention, a substrate processing apparatus includes an upper electrode disposed above a process chamber and spaced apart from an upper surface of the process chamber, a lower electrode disposed below the upper electrode at a predetermined distance from the upper electrode and facing the upper electrode, a substrate placement means electrically grounded, disposed below the lower electrode at a predetermined distance from the lower electrode and facing the lower electrode, and configured to mount a substrate, and a variable capacitor connected between the lower electrode and ground or between the lower electrode and an output terminal of an RF power source. The upper electrode includes a plurality of protrusions protruding toward the lower electrode, and the protrusions are aligned with openings formed in the lower electrode. The method of operating the substrate processing apparatus includes the steps of: supplying a first gas to the substrate placement means by passing it through a first nozzle formed on the protrusion; supplying a second gas to the substrate placement means by passing it through a second nozzle formed on a lower surface of the lower electrode and through the opening; an RF power source providing RF power to the upper electrode to form a first plasma between the protrusion and the substrate placement means; and the RF power source distributing the RF power provided to the upper electrode to the lower electrode to form a second plasma between the lower electrode and the substrate placement means.

[0015] In one embodiment of the present invention, the first plasma and the second plasma are formed simultaneously.

[0016] In one embodiment of the present invention, the method further comprises changing the capacitance of the variable capacitor.

[0017] A substrate processing apparatus according to one embodiment of the present invention includes a process chamber, an upper electrode disposed inside the process chamber and having a nozzle protruding in a lower length direction, a lower electrode disposed below the upper electrode, and a substrate mounting means disposed opposite the lower electrode and mounting a substrate thereon, the lower electrode being electrically floating. Effect of the Invention

[0018] A plasma substrate processing apparatus according to one embodiment of the present invention changes the properties of a thin film by adjusting a ratio of RF power applied to a first plasma formed between an upper electrode including a protrusion and a substrate mounting means, and a second plasma formed between a lower electrode including an opening aligned with the protrusion and the substrate mounting means.

[0019] A plasma substrate processing apparatus according to an embodiment of the present invention performs atomic layer deposition by separately injecting two types of gases through different paths and forming a first plasma and a second plasma in different regions using one of the two types of gases.

[0020] A plasma substrate processing apparatus according to an embodiment of the present invention generates a first plasma and a second plasma in different spaces and applies different dissociation rates to improve film quality and film formation characteristics over a large area. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] In recent years, the growing demand for large-area flat panel displays has created a demand for high-quality organic film formation. In particular, the atomic layer deposition method, which forms thin films by alternately injecting two gases, is becoming increasingly necessary for large-area encapsulation processes and oxide semiconductor deposition.

[0022] According to an embodiment of the present invention, a substrate processing apparatus is provided with a first plasma generating space for generating a first plasma for sufficiently activating a reactive gas, and a second plasma generating space for preventing excessive exposure of a thin film to the plasma. The ratio of the power for generating the first plasma to the power for forming the second plasma is adjusted using a variable capacitor.

[0023] According to one embodiment of the present invention, a substrate processing apparatus includes a substrate placement means and a gas injection unit that are spaced apart from each other. The gas injection unit includes an upper electrode and a lower electrode that are stacked and spaced apart from each other. The upper electrode having a protrusion and the lower electrode having an opening aligned with the protrusion receive RF power from a single RF power source through a parasitic capacitor and a variable capacitor. The gas injection unit supplies a first gas and a second gas onto the substrate through different paths.

[0024] According to an embodiment of the present invention, the output of an RF power source is branched and supplied to the upper electrode, and a part of the RF power supplied to the upper electrode is transferred to the lower electrode through a parasitic capacitor between the upper electrode and the lower electrode. The first RF power provided between the upper electrode and the substrate placement means and the second RF power provided between the lower electrode and the substrate placement means are controlled independently. For this purpose, a variable capacitor is connected between the lower electrode and ground. In this case, a part of the RF power applied to the upper electrode forms a first plasma between the upper electrode and the substrate placement means facing each other through an opening in the lower electrode. The remaining part of the RF power is transferred to the lower electrode through a parasitic capacitor to generate a second plasma between the lower electrode and the substrate placement means. By adjusting the capacitance of the variable capacitor, the distribution ratio of the first RF power and the second RF power is adjusted. By adjusting the power distribution ratio, the first plasma sufficiently activates the reactive gas with a high plasma density, and the second plasma suppresses excessive exposure to the thin film with a low plasma density. RF power is transferred to the lower electrode through a parasitic capacitor between the upper and lower electrodes.

[0025] One end of the variable capacitor is connected to the lower electrode, and the other end of the variable capacitor is connected to ground. When RF power is applied to the upper electrode, a first current flows between the upper electrode and ground, and a second current flows in the lower electrode due to a parasitic capacitance between the lower electrode and the upper electrode.

[0026] The present invention improves the properties of a deposited thin film by adjusting the capacitance of the variable capacitor, the first plasma having a higher electron temperature and plasma density than the second plasma, and the first plasma providing a higher dissociation rate of reactive gases.

[0027] According to one embodiment of the present invention, an upper electrode of a substrate processing apparatus supplies two types of gases (precursor gas and reactive gas) onto a substrate through different paths simultaneously or sequentially for an atomic layer deposition process, i.e., the upper electrode is multiplexed to provide two types of gases through different paths.

[0028] A plasma substrate processing apparatus according to an embodiment of the present invention provides different plasma densities in different regions during an atomic layer deposition process using a precursor gas and a reactive gas, thereby forming a high-quality thin film.

[0029] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, as well as methods for achieving the same, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments described herein, and may be embodied in different forms. Rather, the embodiments described herein are provided so that the disclosure will be thorough and complete, and will fully convey the concept of the present invention to those skilled in the art, and the present invention is defined only by the scope of the claims.

[0030] Throughout the specification, the same elements are designated by the same reference numerals, and therefore the same or similar reference numerals may be used in conjunction with other drawings even if they are not mentioned or described in the drawing, and may be used in conjunction with other drawings even if the reference numerals are not displayed.

[0031] FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line AA' in FIG. FIG. 3 is a cross-sectional view taken along line BB' in FIG. FIG. 4 is a cross-sectional view taken along line CC' in FIG. FIG. 5 is a cutaway perspective view taken along line DD' of FIG. FIG. 6 is a circuit diagram illustrating the substrate processing apparatus of FIG.

[0032] As shown in Figures 1 to 6, a substrate processing apparatus 100 according to an embodiment of the present invention includes a process chamber 110, an upper electrode 130 having a plurality of protrusions 136 protruding downwardly and spaced apart from an upper surface of the upper portion of the process chamber, a lower electrode 120 disposed below the upper electrode 130, a substrate mounting means 152 that is electrically grounded and disposed to face the lower electrode 120 and mounts a substrate, and a variable capacitor 192 connected between the lower electrode and ground or between the lower electrode and an RF power source.

[0033] The substrate processing apparatus 100 according to one embodiment of the present invention includes a process chamber 110, an upper electrode 130 disposed on the upper portion of the process chamber 110 and spaced apart from an upper surface of the process chamber 110, a lower electrode 120 disposed at a predetermined distance from the upper electrode 130 and facing the upper electrode 130 from a lower portion of the upper electrode 130, a substrate mounting means 152 that is electrically grounded and disposed at a predetermined distance from the lower electrode 120 and facing the lower electrode 120 from a lower portion of the lower electrode 120, and mounts a substrate thereon, and a variable capacitor 192 connected between the lower electrode 120 and ground or between the lower electrode 120 and an output terminal of an RF power source 174.

[0034] The upper electrode 130 includes a plurality of protrusions 136 protruding toward the lower electrode 120. The protrusions 136 are aligned with the openings 122 formed in the lower electrode 120. A first gas is supplied to the substrate resting means through a first nozzle 138 formed through the protrusions 136. A second gas is sprayed through a second nozzle 133 formed on the lower surface of the upper electrode, and is supplied to the substrate resting means 152 through a flow path between the upper electrode and the lower electrode and the openings 122. The upper electrode 130 is connected to an RF power source 174. A portion of the RF power provided by the RF power source 174 forms a first plasma between the protrusions 136 and the substrate resting means 152, which is grounded. The remaining portion of the RF power provided by the RF power source 174 is transferred to the lower electrode 120 through a parasitic capacitor between the upper electrode 130 and the lower electrode 120, and forms a second plasma between the lower electrode 120 and the substrate resting means 152.

[0035] The substrate processing apparatus 100 performs an atomic layer deposition process using a first gas supplied to the first nozzle 138 and a second gas supplied to the second nozzle 133. The substrate processing apparatus 100 receives plasma assistance for the atomic layer deposition. When a plasma technique is applied to the atomic layer deposition, the reactivity of an atomic layer deposition reactant gas is improved, the process temperature range is expanded, and the purge time is reduced.

[0036] In plasma enhanced atomic layer deposition (PE-ALD), precursors are sequentially supplied, then purged using a purge gas, reactive gas is supplied using plasma, and then purge gas is supplied. Supplying reactive gas using plasma increases the reactivity of the precursors, thereby increasing the deposition rate and decreasing the substrate temperature.

[0037] The substrate processing apparatus 100 according to an embodiment of the present invention simultaneously generates a first plasma and a second plasma and adjusts the power ratio between the first plasma and the second plasma to simultaneously obtain a high thin film growth rate and a high quality thin film.

[0038] The variable capacitor 192 is connected between the lower electrode 120 and ground. The variable capacitor 192 has a capacitance Cv. The lower electrode 120 receives RF power through a capacitance Ca of a parasitic capacitor between the upper electrode 130 and the lower electrode 120.

[0039] A first plasma is formed between the protrusion 136 of the upper electrode 130 and the substrate placement means 152. A second plasma is formed between the lower electrode 120 and the substrate placement means 152. A first plasma impedance Zp1 of the first plasma is a first plasma resistance R p1 and the first plasma reactance X p1 On the other hand, the second plasma impedance Zp2 of the second plasma is expressed by the equivalent circuit of the second plasma resistance R p2 and the second plasma reactance X p2 This is expressed as the equivalent circuit.

[0040] Thus, the output terminal of the impedance matching network 174a represents a parallel combination of the first plasma impedance Zp1 and an effective impedance Zeff, which includes a variable capacitor 192 connected in parallel with a second plasma impedance Zp2, Cv, and a parasitic capacitor connected in series with the second plasma impedance Zp2 and the variable capacitor 192 in parallel.

[0041] To easily confirm the power distribution, the first plasma impedance Zp1 of the first plasma is assumed to be a first capacitance C1. The second plasma impedance Zp2 of the second plasma is assumed to be a second capacitance C2. The first current flows through the first plasma impedance Zp1. The second current flows through the parasitic capacitor.

[0042] The ratio of the first current to the second current is given by:

number

[0043] where ω is the angular frequency of the RF power supply 174, Z p1 is the first plasma impedance of the first plasma, Z p2 is the second plasma impedance of the second plasma. Ca is the capacitance of the parasitic capacitor between the upper electrode and the lower electrode. Cv is the capacitance of the variable capacitor 192 connected in parallel to the second plasma.

[0044] When the capacitance Cv of the variable capacitor 192 is changed, the ratio of the first current I1 flowing through the first plasma to the second current I2 flowing through the effective impedance Zeff is adjusted. 2 ' and the current flowing through the second plasma impedance I 2 That is, the current I flowing through the second plasma impedance according to the capacitance Cv of the variable capacitor 192 is 2 '' is controlled.

[0045] Therefore, the variable capacitor 192 adjusts the RF power ratio for forming the first plasma and the second plasma. The first plasma discharges the first gas or the second gas at a high plasma density, and the second plasma discharges the first gas or the second gas at a low plasma density. The density of the first plasma generated in the opening 122 is higher than the density of the second plasma generated below the lower electrode 120. That is, the first plasma sufficiently dissociates the first gas or the second gas in the opening 122, and the second plasma activates the first gas or the second gas while suppressing damage to the film quality due to the low plasma density. This improves the thin film deposition rate and film quality.

[0046] As the capacitance Cv of the variable capacitor 192 is changed, the first current I1 flowing through the first plasma impedance Zp1 and the current I 2The ratio of the first RF power for forming the first plasma to the second RF power for forming the second plasma is selected according to the thin film to be deposited. The process chamber 110 is a metal chamber, a cylindrical chamber, or a rectangular parallelepiped chamber. A lid 140 of the process chamber 110 covers an open upper surface of the process chamber 110. The process chamber 110 is evacuated to a vacuum state by an exhaust unit. The process chamber 110 is electrically grounded. The lid 140 is disposed on the upper electrode 130 at a distance, and a gas buffer space 144 is provided between a lower surface of the lid and an upper surface of the upper electrode 130. The lid 140 is plate-shaped, made of a conductive material, and is grounded. The height of the gas buffer space 144 is within a few millimeters so as not to generate parasitic plasma. The gas buffer space 144 receives a first gas from the outside through a gas supply line 146. The gas buffer space 144 supplies a first gas to the opening 122 of the lower electrode through a first nozzle 138 penetrating the protrusion 136.

[0047] The upper electrode 130 is spaced apart from the lower portion of the lead 140. The upper electrode 130 receives RF power from an RF power source 174 through an impedance matching network 174a. The upper electrode 130 is a plate-shaped conductor. The upper electrode 130 includes a plurality of protrusions 136 protruding from a lower surface thereof. The protrusions 136 are arranged in a matrix. A first nozzle 138 is formed to penetrate the protrusions 136 or to continuously penetrate the protrusions and the upper electrode. The first nozzle 138 injects a first gas.

[0048] The upper electrode 130 includes a plurality of first direction flow passages 132 extending in parallel to a first direction therein, and a pair of second direction flow passages 134 extending in a second direction perpendicular to the first direction and connecting both ends of the first direction flow passages. The second nozzles 133 are connected to the first direction flow passages 132. The second nozzles 133 are arranged in a matrix on the lower surface of the upper electrode with a constant interval. First nozzles 138 and openings 122 are arranged at a constant interval along the first direction between adjacent first direction flow passages 132. A pair of second direction flow passages 134 are extended in the second direction at both ends of the first direction flow passages 132 to supply a second gas to the first direction flow passages.

[0049] The lower electrode 120 is a plate-shaped conductor. The distance between the lower electrode 120 and the upper electrode 130 is several millimeters or less so as not to generate parasitic plasma. A space 131 between the lower electrode 120 and the upper electrode 130 forms a flow path so that the second gas injected through the second nozzle 133 is discharged through the opening 122.

[0050] The lower electrode 120 receives RF power by capacitive coupling of a part of the RF power supplied to the upper electrode 130 through a parasitic capacitor Ca. The lower electrode 120 includes a plurality of openings 122 arranged in a matrix. The substrate placement means 152, which is grounded to the lower electrode 120, forms a second plasma. The lower electrode 120 is electrically connected to a variable capacitor 192.

[0051] The substrate rest means 152 is electrically grounded and has a plate shape. The substrate rest means 152 has a substrate 153 mounted on its upper surface. The substrate rest means 152 supports the substrate 153 and heats or cools the substrate at a certain temperature.

[0052] The RF power source 174 has a frequency of several MHz to several hundred MHz and supplies RF power through an impedance matching network 174a to the upper electrode 130. The upper electrode 130 receives RF power from multiple points, thereby suppressing the standing wave effect.

[0053] An insulating spacer 129 is disposed on the edge of the upper surface of the lower electrode 120. The insulating spacer 129 electrically insulates the upper electrode 130 from the lower electrode 120 and provides a flow path for the second gas to travel. The flow path is a space in which the second gas injected by the second nozzle 133 diffuses. The thickness of the insulating spacer 129 is several millimeters or less so that the second gas does not form a parasitic plasma in the flow path.

[0054] The insulating part 162 is disposed to surround the edges of the upper electrode 130 and the lower electrode 120. The insulating part 162 is coupled to a sidewall of the process chamber 110. The insulating part 162 is inserted into and coupled to a recess formed in an upper inner wall of the process chamber. The insulating part 162 supports the upper electrode 130 through an auxiliary recess formed in an inner upper part thereof.

[0055] An auxiliary insulating spacer 164 is disposed to cover the edge of the insulating portion 162 and the upper electrode 130. The auxiliary insulating spacer 164 provides the gas buffer space 144 between the lid 140 and the upper electrode 130. The auxiliary insulating spacer 164 is aligned with the outer surface of the insulating portion 162. The auxiliary insulating spacer 164 is made of ceramic such as alumina or plastic. The thickness of the auxiliary insulating spacer 164 is several hundred micrometers to several millimeters to prevent parasitic plasma from being generated. The gas buffer space 144 is connected to a first nozzle 138 that penetrates the upper electrode and the protrusion.

[0056] The gas supply passage 142 vertically penetrates an edge of the lid 140 and is connected to the second direction passage 134. First auxiliary holes 134a are disposed at an edge of the upper electrode 130 to connect the gas supply passage 142 to the second direction passage 134. Second auxiliary holes 164a penetrate the auxiliary insulating spacer 164 and are aligned with the first auxiliary holes 134a. The gas supply passages 142 are multiple and are disposed in the second direction.

[0057] An RF power supply line 172 vertically passes through the lid 140 between a pair of adjacent first nozzles 138 aligned in the first direction and is electrically connected to the upper electrode 130 .

[0058] The upper electrode 130 injects a first gas through the first nozzle 138 onto the substrate 153 and injects a second gas through the second nozzle 133 into the flow path. The second gas diffused in the flow path is injected toward the substrate through the opening 122. The first gas is a precursor gas and the second gas is a reactive gas. Or, the first gas is a reactive gas and the second gas is a precursor gas. The precursor gas is tri-methyl aluminum (TMA), TiCl4, HfCl4, or SiH4. The reactive gas includes at least one of H2, N2, O2, NH3, Ar, and He.

[0059] In the plasma-assisted atomic layer deposition process, in the first step, the upper electrode 130 injects a first gas (e.g., precursor gas) through the first nozzle 138, and in the second step, a purge gas (e.g., argon gas) is injected through the first nozzle 138 to remove excess precursor gas on the substrate. In the third step, a second gas (e.g., reactive gas) is supplied through the second nozzle 133, and RF power is supplied to the upper electrode 130 to form a first plasma between the protrusion 138 and the substrate resting means 152, and a second plasma is formed between the lower electrode 120 and the substrate resting means 152. The first plasma sufficiently dissociates the second gas within the opening 122. The second plasma activates the second gas between the lower electrode and the substrate resting means. In the fourth step, a purge gas (e.g., argon gas) is injected through the second nozzle 133 to remove excess second gas. The above first to fourth steps are repeated.

[0060] According to an embodiment of the present invention, a method of operating a substrate processing apparatus includes the steps of: supplying a first gas to the substrate placement means 152 through a first nozzle 138 formed on the protrusion 136; supplying a second gas to the substrate placement means 152 through a second nozzle 133 formed on a lower surface of the lower electrode 120 and the opening 122; providing RF power to the upper electrode 130 by an RF power source 174 to form a first plasma between the protrusion 136 and the substrate placement means 152; and distributing the RF power provided to the upper electrode to the lower electrode by the RF power source 174 to form a second plasma between the lower electrode 120 and the substrate placement means 152. The first plasma and the second plasma are formed simultaneously. The density of the first plasma is higher than the density of the second plasma.

[0061] The operating method further includes the steps of providing a first gas to the substrate placement means through a first nozzle formed in the protrusion for atomic layer deposition, and then providing a purge gas to the substrate placement means through the first nozzle.

[0062] In this method of operation, the first gas and the second gas are simultaneously supplied for chemical vapor deposition, and the first plasma and the second plasma are simultaneously formed.

[0063] The method of operation varies the capacitance of the variable capacitor to adjust a characteristic of the first plasma and the second plasma.

[0064] The substrate processing apparatus according to an embodiment of the present invention is applied to a chemical vapor deposition process. A first nozzle 138 injects a first gas such as SiH4, and a second nozzle 133 injects a dilution gas such as hydrogen, nitrogen, or ammonia. The first plasma fully dissociates the first gas and the second gas, and the second plasma activates the first gas and the second gas.

[0065] A substrate processing apparatus according to an embodiment of the present invention performs an atomic layer deposition process of an organic or inorganic film for improving moisture permeability in a sealing process of a large area display.

[0066] FIG. 7 is a conceptual diagram illustrating a substrate processing apparatus according to another embodiment of the present invention.

[0067] FIG. 8 is a circuit diagram showing the substrate processing apparatus of FIG.

[0068] 7 and 8, the substrate processing apparatus 100a further includes a reactive element 194 connected between the upper electrode 130 and the lower electrode 120. The reactive element 194 has a reactance X. The reactive element 194 is a fixed capacitor. The reactive element 194 is connected in parallel to the parasitic capacitor. The reactive element 194 efficiently transfers RF power to the lower electrode 120. The reactive element 194 improves the linearity of the power distribution ratio according to the capacitance Cv of the variable capacitor 192.

[0069] FIG. 9 is a cutaway perspective view illustrating a substrate processing apparatus according to another embodiment of the present invention.

[0070] FIG. 10 is a circuit diagram illustrating the substrate processing apparatus of FIG.

[0071] 9 and 10, the substrate processing apparatus 100b includes a variable capacitor 192 connected between the lower electrode 120 and an output terminal of an RF power supply 174. Specifically, an output terminal of an impedance matching network 174a is branched and connected to the upper electrode 130, and is connected to the lower electrode 120 through the variable capacitor 192. The upper electrode 130 is connected to the lower electrode 120 through the variable capacitor 192 and a parasitic capacitor.

[0072] Adjusting the capacitance Cv of the variable capacitor 192 adjusts the ratio of a first RF power provided to a first plasma generated between the protrusion 136 of the upper electrode 130 and the substrate placement means 152 to a second RF power provided to a second plasma generated between the lower electrode 120 and the substrate placement means 152. A parasitic capacitor Ca between the upper electrode 130 and the lower electrode 120 is connected in parallel to the variable capacitor 192. A second plasma impedance Zp2 is connected in series to the parallel-connected parasitic capacitor and the variable capacitor 192.

[0073] To easily confirm the power distribution, the first plasma impedance Zp1 of the first plasma is assumed to be a first capacitance C1. The second plasma impedance Zp2 of the second plasma is assumed to be a second capacitance C2. The ratio of the first current to the second current is given as follows:

number

[0074] FIG. 11 is an exploded cutaway perspective view illustrating a substrate processing apparatus according to another embodiment of the present invention.

[0075] As shown in FIG. 11, the substrate processing apparatus 100c includes a channel insulating plate 180. The channel insulating plate 180 is disposed between the upper electrode 130 and the lower electrode 120. The channel insulating plate 180 is an insulator. The channel insulating plate 180 includes a sub-opening 182 aligned with the opening 122. The sub-opening penetrates the channel insulating plate 180. The channel insulating plate 180 includes a trench 184 connecting the second nozzle 133 and the sub-opening 182. The trench 184 extends in a second direction from an upper surface of the channel insulating plate 180. The channel insulating plate 180 suppresses parasitic discharge and forms a channel.

[0076] A reactive element 194 is further disposed between the upper electrode and the lower electrode to transfer RF power provided from the upper electrode to the lower electrode.

[0077] The reactive element 194 is a fixed capacitor. The flow path insulating plate suppresses parasitic discharge and provides a flow path for the second gas.

[0078] FIG. 12 is a cutaway perspective view illustrating a substrate processing apparatus according to another embodiment of the present invention.

[0079] FIG. 13 is a circuit diagram of the substrate processing apparatus of FIG.

[0080] As shown in FIGS. 12 and 13, the substrate processing apparatus 100d includes a variable capacitor 192 and a fixed inductor 193 connected between the upper electrode 130 and the lower electrode 120. The fixed inductor 193 has an inductance L. The capacitance Ca of a parasitic capacitor, the capacitance Cv of the variable capacitor 192, and the inductance L of the fixed inductor 193 form a parallel resonant circuit. When the RF power supply operates at a resonant frequency by adjusting the capacitance Cv of the variable capacitor, the impedance of the resonant circuit increases to infinity, and the power of the RF power supply mainly selectively forms only the first plasma. On the other hand, when the capacitance of the variable capacitor is adjusted to operate at a frequency deviated from the resonant frequency, the RF power is distributed between the lower electrode and the substrate placement means, and the first plasma and the second plasma are simultaneously formed.

[0081] 5, a substrate processing apparatus 100 according to one embodiment of the present invention includes a process chamber 110, an upper electrode 130 disposed inside the process chamber and having a nozzle protruding in a lower longitudinal direction, a lower electrode 120 disposed below the upper electrode, a substrate mounting means 152 disposed opposite the lower electrode and for mounting a substrate, and the lower electrode 130 is electrically floating.

[0082] That is, in Fig. 5, the variable capacitor 192 is removed. As a result, the lower electrode receives RF power from the upper electrode by capacitive coupling to form a second plasma between the lower electrode and the substrate placement means. The protruding portion of the upper electrode forms a first plasma between the substrate placement means through the opening of the lower electrode. The voltage drop between the lower electrode and the substrate placement means is smaller than the voltage drop between the upper electrode and the substrate placement means according to a voltage distribution model. As a result, the characteristics of the second plasma are different from the characteristics of the first plasma.

[0083] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will recognize that the present invention can be embodied in other specific forms without changing the technical concept or essential features of the present invention. Therefore, the above embodiments should be understood as being illustrative in all respects and not restrictive. [Brief description of the drawings]

[0084] [Figure 1] 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 2 is a cross-sectional view taken along line AA' in FIG. [Diagram 3] 2 is a cross-sectional view taken along line BB' in FIG. 1. [Figure 4] 2 is a cross-sectional view taken along line CC' in FIG. 1. [Diagram 5] FIG. 2 is a cutaway perspective view taken along line DD' in FIG. [Figure 6] FIG. 2 is a circuit diagram illustrating the substrate processing apparatus of FIG. [Figure 7] FIG. 11 is a conceptual diagram illustrating a substrate processing apparatus according to another embodiment of the present invention. [Figure 8] FIG. 8 is a conceptual diagram for explaining the substrate processing apparatus according to another embodiment of the present invention shown in FIG. 7. [Figure 9] FIG. 11 is a cutaway perspective view illustrating a substrate processing apparatus according to another embodiment of the present invention. [Figure 10] 10 is a circuit diagram illustrating the substrate processing apparatus of FIG. 9. [Figure 11] FIG. 11 is an exploded cutaway perspective view illustrating a substrate processing apparatus according to another embodiment of the present invention. [Figure 12] FIG. 11 is a cutaway perspective view illustrating a substrate processing apparatus according to another embodiment of the present invention. [Figure 13] FIG. 13 is a circuit diagram of the substrate processing apparatus of FIG.

Claims

1. A substrate processing apparatus, comprising: a process chamber; an upper electrode having a plurality of protrusions protruding downwardly and spaced apart from an upper surface of the upper portion of the process chamber; a lower electrode disposed below the upper electrode; a substrate placement means for placing a substrate thereon, the substrate placement means being electrically grounded and disposed to face the lower electrode; a variable capacitor connected between the lower electrode and ground; A substrate processing apparatus comprising: the upper electrode is connected to an RF power source to generate a first plasma between the protrusion and the substrate placement means; The RF power of the RF power source forms a second plasma between the lower electrode and the substrate placement means; a first gas is supplied to the substrate placement means by passing through a first nozzle formed in the protruding portion; a second gas is supplied to the substrate placement means by passing through a second nozzle formed on a lower surface of the upper electrode and through an opening formed in the lower electrode; RF power of the RF power source is transmitted to the lower electrode through a parasitic capacitor between the upper electrode and the lower electrode; the variable capacitor is connected between the bottom electrode and ground; The substrate processing apparatus, wherein the variable capacitor adjusts a ratio of RF powers for forming a first plasma and a second plasma.

2. the protrusions and the first nozzles are periodically arranged in a matrix, The substrate processing apparatus of claim 1 , wherein the second nozzles are periodically arranged in a matrix at a distance from the first nozzles.

3. The substrate processing apparatus of claim 1 , further comprising a reactive element connected between the upper electrode and the lower electrode.

4. a process chamber; an upper electrode having a plurality of protrusions protruding downwardly and spaced apart from an upper surface of the upper portion of the process chamber; a lower electrode disposed below the upper electrode; a substrate placement means for placing a substrate thereon, the substrate placement means being electrically grounded and disposed to face the lower electrode; a variable capacitor connected between the upper electrode and the lower electrode; A substrate processing apparatus comprising: the upper electrode is connected to an RF power source to generate a first plasma between the protrusion and the substrate placement means; The RF power of the RF power source forms a second plasma between the lower electrode and the substrate placement means; a first gas is supplied to the substrate placement means by passing through a first nozzle formed in the protruding portion; a second gas is supplied to the substrate placement means by passing through a second nozzle formed on a lower surface of the upper electrode and through an opening formed in the lower electrode; RF power of the RF power source is transmitted to the lower electrode through a parasitic capacitor between the upper electrode and the lower electrode and the variable capacitor; The substrate processing apparatus, wherein the variable capacitor adjusts a ratio of RF powers for forming a first plasma and a second plasma.

5. The substrate processing apparatus of claim 4 , further comprising a fixed inductor connected between the upper electrode and the lower electrode.

6. a substrate mounting means for mounting a substrate thereon, the substrate mounting means being electrically grounded, the substrate mounting means being disposed below the lower electrode at a predetermined distance from the lower electrode, the substrate mounting means being disposed below the lower electrode at a predetermined distance from the lower electrode, the substrate mounting means being disposed below the lower electrode at a predetermined distance from the lower electrode, the substrate mounting means being disposed below the lower electrode at a predetermined distance from the lower electrode, the substrate mounting means being disposed below the lower electrode at a predetermined distance from the lower electrode, the substrate mounting means being disposed below the lower electrode at a predetermined distance from the lower electrode, the substrate mounting means being disposed below the lower electrode at a predetermined distance from the lower electrode, providing a first gas to the substrate placement means by passing the first gas through a first nozzle formed on the protrusion; supplying a second gas to the substrate placement means by passing the second gas through a second nozzle formed on a lower surface of the lower electrode and through an opening formed in the lower electrode; an RF power source providing RF power to the upper electrode to form a first plasma between the protrusion and the substrate seating means; the RF power source distributes RF power provided to the upper electrode to the lower electrode to form a second plasma between the lower electrode and the substrate placement means; Including, the upper electrode is connected to the RF power source to generate a first plasma between the protrusion and the substrate placement means; The RF power of the RF power source forms a second plasma between the lower electrode and the substrate placement means; RF power of the RF power source is transmitted to the lower electrode through a parasitic capacitor between the upper electrode and the lower electrode; The variable capacitor adjusts a ratio of RF powers for forming a first plasma and a second plasma.

7. 7. The method of claim 6, wherein the first plasma and the second plasma are generated simultaneously.

8. The method of claim 7, further comprising changing the capacitance of the variable capacitor.

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