Laminate

Abstract

Provided is a laminate having an anisotropic conductive member that is easy to handle when separated into individual pieces. [Solution] A laminate in which a support, an adhesive layer, and an anisotropically conductive member are laminated in this order, the anisotropically conductive member having an electrically insulating base material and a plurality of conductive paths penetrating the insulating base material in the thickness direction and provided in a state in which they are electrically insulated from each other, each of the plurality of conductive paths being made of a conductive material, the diameter of one side of the insulating base material in the thickness direction being different from the diameter of the other side in the thickness direction, and when the value of small diameter / large diameter, which is the ratio of the small diameter on one side of the conductive path to the large diameter on the other side, is R, 0.1≦R≦0.98.

Description

[Technical field]

[0001] The present invention relates to a laminate in which a support, an adhesive layer, and an anisotropically conductive member are laminated in this order, and in particular to a laminate in which the diameters of the conductive paths of the anisotropically conductive member are different on opposing surfaces. [Background technology]

[0002] 2. Description of the Related Art There is an anisotropic conductive member having conductive paths in which a plurality of through holes are provided in an insulating base material and filled with a conductive material such as metal. Anisotropically conductive members are widely used as electrical connection members for electronic components such as semiconductor elements, and for testing connectors when conducting functional tests, because electrical connection between the electronic component and the circuit board can be obtained simply by inserting the anisotropically conductive member between the electronic component and the circuit board and applying pressure therebetween. In particular, electronic components such as semiconductor elements are being significantly downsized. Conventional methods for directly connecting wiring boards, such as wire bonding, flip chip bonding, and thermocompression bonding, may not be able to fully ensure the stability of electrical connections of electronic components, and therefore anisotropic conductive materials have been attracting attention as electronic connection materials.

[0003] As an anisotropic conductive member, for example, Patent Document 1 describes an anisotropic conductive bonding member having an insulating base material made of an inorganic material, a plurality of conductive paths made of a conductive member, and a resin layer provided on the entire surface of the insulating base material. The conductive paths are provided penetrating the insulating base material in the thickness direction while being insulated from each other. The conductive paths are parallel to each other and have protruding parts protruding from the surface of the insulating base material, and the ends of the protruding parts are embedded in the resin layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2018-037509 A Summary of the Invention [Problem to be solved by the invention]

[0005] When the anisotropic conductive bonding member of Patent Document 1 is used as an electronic connection member, the anisotropic conductive bonding member is provided for each semiconductor element to be connected, and therefore the size of the anisotropic conductive bonding member needs to be adjusted according to the size of the semiconductor element. For this reason, the anisotropic conductive bonding member of Patent Document 1 is cut into individual pieces according to the size of the semiconductor element. When a semiconductor element and a circuit board are electrically connected using a singulated anisotropic conductive bonding member, the singulated anisotropic conductive bonding member must be transported to a predetermined position on the circuit board, for example. However, it is difficult to hold and transport the singulated anisotropic conductive bonding member without damaging it. For this reason, there is a demand for an anisotropic conductive member that is easy to handle, such as one that can be held or transported without damaging it when it is singulated.

[0006] An object of the present invention is to provide a laminate having an anisotropic conductive member that can be easily handled when separated into individual pieces. [Means for solving the problem]

[0007] In order to achieve the above-mentioned object, invention [1] is a laminate in which a support, an adhesive layer, and an anisotropically conductive member are laminated in this order, the anisotropically conductive member having an electrically insulating base material and a plurality of conductive paths penetrating the insulating base material in the thickness direction and provided in a state in which they are electrically insulated from each other, each of the plurality of conductive paths being made of a conductive material, the diameter of one side of the insulating base material in the thickness direction being different from the diameter of the other side of the conductive path in the thickness direction, and when the value of the small diameter / large diameter, which is the ratio of the small diameter of the diameter of one side of the conductive path to the large diameter of the diameter of the other side, is R, the laminate satisfies 0.1≦R≦0.98.

[0008] Invention [2] is a laminate according to invention [1], in which the anisotropically conductive member is laminated with the larger diameter of the diameter of one side of the conductive path facing the adhesive layer. Invention [3] is a laminate according to Invention [1] or [2], wherein the adhesive layer has an adhesive force that decreases within a specific temperature range or an adhesive force that decreases due to ultraviolet rays. Invention [4] is a laminate according to Invention [3], wherein the adhesive layer has an adhesive force that decreases when the temperature is 110°C or higher. Invention [5] is a laminate according to any one of Inventions [1] to [4], wherein the insulating base material is an anodized film of valve metal. In Invention [6], the density of the conduction paths on one surface and the other surface of the insulating base material is 1×10 6 ~1×10 10 / mm 2 and the diameter of the conduction paths is 10 nm or more and 500 nm or less. It is a laminate according to any one of Inventions [1] to [5].

[0009] Invention [7] is a laminate according to any one of Inventions [1] to [6], wherein the insulating base material has a thickness of 10 μm or more and 30 μm or less. Invention [8] is a laminate according to any one of Inventions [1] to [7], wherein the insulating base material has a value R of the minor diameter / major diameter of 0.1 ≦ R ≦ 0.95. Invention [9] is a laminate according to any one of Inventions [1] to [8], wherein the support is a joining member having a metal layer, and the metal layer is exposed from the adhesive layer. Invention

[10] is a laminate according to any one of Inventions [1] to [9], wherein the anisotropic conductive member has cracks in the insulating base material. Invention

[11] is a laminate according to any one of Inventions [1] to

[10] , wherein the conduction paths have protrusions protruding from at least one of the opposing surfaces in the thickness direction of the insulating base material.

Advantages of the Invention

[0010] According to the present invention, it is possible to provide a laminate having an anisotropic conductive member that is easy to handle when singulated.

Brief Description of the Drawings

[0011] [Figure 1]FIG. 1 is a schematic cross-sectional view showing a first example of a laminate according to an embodiment of the present invention. [Diagram 2] FIG. 1 is a schematic plan view showing a first example of a laminate according to an embodiment of the present invention. [Diagram 3] FIG. 2 is a schematic plan view showing an example of a cut shape of a first example of a laminate according to an embodiment of the present invention. [Figure 4] FIG. 2 is a schematic diagram showing an example of an individualized anisotropic conductive member. [Diagram 5] 3 is a schematic plan view showing another example of an anisotropically conductive member of the first example of the laminate according to the embodiment of the present invention. FIG. [Figure 6] FIG. 3 is a schematic cross-sectional view showing a second example of a laminate according to an embodiment of the present invention. [Figure 7] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. [Figure 8] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. [Figure 9] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. [Figure 10] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. [Figure 11] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. [Figure 12] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. [Figure 13] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. [Figure 14] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. [Figure 15] FIG. 2 is a schematic cross-sectional view showing one step of an example of a method for producing a laminate according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the laminate of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings. It should be noted that the drawings described below are illustrative and are simplified for the purpose of explaining the present invention, and therefore the present invention is not limited to the drawings shown below. In the following, the range of values ​​indicated by "~" includes the values ​​written on both sides. For example, when ε is the value ε α ~number ε β That is, the range of ε is the number ε α and the number ε α The range includes ε α ≦ε≦ε α It is. Unless otherwise specified, the parallelism includes a generally acceptable error range in the relevant technical field. Unless otherwise specified, the temperature and time include error ranges generally accepted in the relevant technical field. In addition, the term "same" includes a generally acceptable margin of error in the relevant technical field. In addition, the terms "over the entire surface" and "over the entire surface" include a generally acceptable margin of error in the relevant technical field. The laminate will now be described in detail.

[0013] [First example of laminate] Fig. 1 is a schematic cross-sectional view showing a first example of a laminate according to an embodiment of the present invention, and Fig. 2 is a schematic plan view showing the first example of a laminate according to an embodiment of the present invention. Fig. 2 is a plan view seen from the front surface 20a side of the insulating substrate 20 in Fig. 1, showing a state in which the resin layer 18 is not present. 1 is obtained by laminating a support 12, an adhesive layer 14, and an anisotropic conductive member 16 in this order. The adhesive layer 14 is provided on a surface 12a of the support 12, and the anisotropic conductive member 16 is provided on a surface 14a of the adhesive layer 14. The laminate 10 further has a resin layer 18 provided on the anisotropic conductive member 16. The direction in which the support 12, the adhesive layer 14, and the anisotropically conductive member 16 are laminated is the lamination direction Ds.

[0014] The support 12 supports the anisotropically conductive member 16. By providing the support 12, the anisotropically conductive member 16 can be handled more easily than when the anisotropically conductive member 16 is handled alone. The support 12 preferably has a rigidity and size that allows it to be transported mechanically using an arm, a transport jig, or the like. Here, handling refers to gripping and holding the anisotropic conductive member 16, as well as moving the anisotropic conductive member 16, such as transporting, conveying, and carrying the anisotropic conductive member 16. The anisotropic conductive member 17 obtained by cutting the anisotropic conductive member 16 is handled in the same manner as the anisotropic conductive member 16. "Easy to handle" means that damage to the anisotropically conductive member 16 can be suppressed when the anisotropically conductive member 16 is grasped and held, and when the anisotropically conductive member 16 is moved, transported, carried, etc. From the viewpoint of ease of handling, such as transportation and installation in various processing devices, the outer shape and size of the support 12 are preferably the same as those of the anisotropically conductive member 16. In this case, when the outer shape of the anisotropically conductive member 16 is a circle with a specific diameter, the outer shape of the support 12 is preferably also a circle with a specific diameter.

[0015] The adhesive layer 14 bonds the support 12 and the anisotropically conductive member 16. When the conductive paths 22 of the anisotropically conductive member 16 have protruding portions that protrude from the insulating substrate 20, the adhesive layer 14 functions as a protective layer that protects the protruding portions. In order to easily peel off the anisotropic conductive member 16 from the support 12, it is preferable that the adhesive strength of the adhesive layer 14 decreases within a specific temperature range or decreases when exposed to ultraviolet light. The adhesive layer 14 will be described later.

[0016] The anisotropically conductive member 16 has an insulating base material 20 having electrical insulation properties, and a plurality of conductive paths 22 that penetrate the insulating base material 20 in the thickness direction Dt and are provided in a state where they are electrically insulated from each other. In this case, for example, the insulating base material 20 has a plurality of pores 21 penetrating in the thickness direction Dt. A conductive material is filled into the plurality of pores 21 to form a plurality of conductive paths 22. The conductive paths 22 are columnar conductors made of a conductive material and have electrical conductivity. The anisotropically conductive member 16 has anisotropic conductivity and is conductive in the thickness direction Dt, but has a sufficiently low conductivity in a direction x parallel to the surface 20a of the insulating base material 20. Here, the front surface 20a of the insulating substrate 20 and the back surface 20b of the insulating substrate 20 are surfaces that face each other in the thickness direction Dt of the insulating substrate 20. The insulating substrate 20 is formed of, for example, an anodized film of a valve metal.

[0017] For example, the conductive path 22 has a protruding portion 22a protruding from the front surface 20a of the insulating substrate 20. The conductive path 22 has a protruding portion 22b protruding from the back surface 20b of the insulating substrate 20. The protruding portion 22a of the conductive path 22 is embedded in the resin layer 18. The protruding portion 22b of the conductive path 22 is embedded in the adhesive layer 14. Although the conductive path 22 has the protrusion 22a and the protrusion 22b, the present invention is not limited to this. The conductive path 22 may have a protrusion protruding from at least one of the opposing surfaces in the thickness direction Dt of the insulating base material 20. That is, the conductive path 22 may have at least one of the protrusion 22a and the protrusion 22b. Furthermore, the conductive path 22 may have neither the protrusion 22a nor the protrusion 22b.

[0018] As shown in Fig. 2, the laminate 10 has, for example, a circular outer shape. The outer shape of the laminate 10 is not limited to a circular shape, and may be, for example, a rectangular shape. The outer shape of the laminate 10 can be a shape according to the application, ease of manufacture, and the like. In the laminate 10, for example, when a silicon wafer is used as the support 12, the outer shape of the anisotropic conductive member 16 is circular.

[0019] In the anisotropically conductive member 16, the plurality of conductive paths 22 are each made of a conductive material as described above, and the diameter of one surface of the insulating substrate 20 in the thickness direction Dt is different from the diameter of the other surface of the insulating substrate 20 in the thickness direction Dt. That is, the conductive paths 22 have a diameter Da on the front surface 20a of the insulating substrate 20 and a diameter Db on the back surface 20b of the insulating substrate 20 that are different from each other. In the anisotropically conductive member 16 shown in FIG. 1, the relationship is such that the diameter Da is smaller than the diameter Db, and the diameter Db is larger. The anisotropically conductive member 16 is laminated such that the back surface 20b of the insulating substrate 20, which is the surface on the side on which the diameter Db of the conductive paths 22 is larger, faces the adhesive layer 14.

[0020] As described above, the conductive path 22 has a diameter Da at the front surface 20a of the insulating substrate 20 and a diameter Db at the back surface 20b of the insulating substrate 20, which are different from each other. As one example, the side surface 22c of the conductive path 22 is configured as a slope inclined with respect to the thickness direction Dt of the insulating substrate 20, and is configured without any bends or the like. In the cross section shown in FIG. 1, the side surface 22c is tapered such that the distance therebetween continuously narrows from the back surface 20b to the front surface 20a of the insulating substrate 20 in the thickness direction Dt. The side surface 22c is not particularly limited to the tapered configuration shown in FIG. 1. When the shape of the conductive paths 22 on the surface 20a of the insulating substrate 20 is not circular, the diameter Da of the conductive paths 22 on the surface 20a of the insulating substrate 20 is the diameter of an equivalent circle. Furthermore, when the shape of the conductive paths 22 on the back surface 20b of the insulating substrate 20 is not circular, the diameter Db on the back surface 20b of the insulating substrate 20 is the diameter of an equivalent circle. 1 has a configuration including protrusions 22a and 22b. In both cases where conductive path 22 has protrusions 22a and 22b and where conductive path 22 does not have protrusions 22a and 22b, diameter Da is the diameter at front surface 20a of insulating substrate 20, and diameter Db is the diameter at back surface 20b of insulating substrate 20.

[0021] When the value of the ratio of the smaller diameter (minor diameter) to the larger diameter (major diameter) of one surface and the other surface of the conductive path 22 is defined as R, 0.1 ≤ R ≤ 0.98, preferably 0.1 ≤ R ≤ 0.95, more preferably 0.1 ≤ R ≤ 0.85, and still more preferably 0.5 < R ≤ 0.85. Note that the value of the above-mentioned minor diameter / major diameter R is expressed as R = Da / Db. In this case, 0.1 ≤ R ≤ 0.98 means 0.1Db ≤ Da ≤ 0.98Db.

[0022] When the value of the minor diameter / major diameter R is 0.1 ≤ R ≤ 0.98, the ratio of the conductive path 22 occupied by the front surface 20a and the back surface 20b of the insulating base material 20 is different. As a result, a difference occurs between the force acting within the front surface 20a of the insulating base material 20 and the force acting within the back surface 20b of the insulating base material 20. Based on the difference in the forces generated within the front surface 20a and the back surface 20b of the insulating base material 20, a stress difference occurs between the stress generated on the front surface 20a of the insulating base material 20 and the stress generated on the back surface 20b of the insulating base material 20. Based on this stress difference, when the anisotropic conductive member 16 is separated into individual pieces, it warps. When the separated anisotropic conductive member 17 warps, a part of the anisotropic conductive member 17 floats away from the installation surface such as the surface of the support. As a result, when the anisotropic conductive member is separated into individual pieces, it is easy to remove and handle. That is, the handling becomes good. In addition, when the value of the minor diameter / major diameter R is 0.1 ≤ R ≤ 0.85, when the anisotropic conductive member is separated into individual pieces, it becomes even easier to remove and the handling becomes even better. When the value of the minor diameter / major diameter R is 0.5 < R ≤ 0.85, when the anisotropic conductive member is separated into individual pieces, in addition to being even easier to remove and having even better handling, the quality of the anisotropic conductive member after taking out the separated anisotropic conductive member is good.

[0023] Here, FIG. 3 is a schematic plan view showing an example of a cut form of a first example of the laminate according to the embodiment of the present invention, and FIG. 4 is a schematic diagram showing an example of the separated anisotropic conductive member. In FIGS. 3 and 4, the same components as those of the laminate 10 shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted. FIG. 3 omits the illustration of the resin layer 18. The anisotropically conductive member 16 of the laminate 10 shown in Fig. 3 is cut into, for example, a rectangular shape using, for example, a laser or a dicing saw. This causes the anisotropically conductive member 16 to be divided into individual pieces. Among the cut anisotropically conductive member 16, the divided anisotropically conductive members 17 are independent of each other and are not constrained in a direction parallel to the surface 20a of the insulating base material 20 (see Fig. 1).

[0024] After the anisotropic conductive member 16 is divided into individual pieces, for example, if the adhesive layer 14 (see FIG. 1) has a property that the adhesive strength is weakened by temperature, a heat treatment is performed to weaken the adhesive strength of the adhesive layer 14. As a result, the binding force of the adhesive layer 14 on the individualized anisotropic conductive member 17 to the support 12 is reduced, and the individualized anisotropic conductive member 17 can be easily removed from the support 12 (see FIG. 1). At this time, if R is 0.1≦R≦0.98 as described above, the stress difference based on the difference between the diameter Da on the front surface 20a of the insulating base material 20 and the diameter Db on the back surface 20b of the insulating base material 20 causes the individualized anisotropic conductive member 17 to warp as shown in FIG. 4. When the anisotropic conductive member 16 having a diameter Da<diameter Db is divided into individual pieces as shown in FIG. 4, it warps convexly with respect to the front surface 12a of the support 12, and a part of the individualized anisotropic conductive member 17 floats away from the front surface 12a of the support 12. For example, when transporting the singulated anisotropic conductive material 17 on a chip tray using the head (not shown) of a flip chip bonding device (not shown), or when transporting the singulated anisotropic conductive material 17 using the head (not shown) of a chip mounter (not shown), a warped anisotropic conductive material 17 is easier to grip with the head, etc., and easier to remove, compared to a non-warped anisotropic conductive material, and is therefore easier to handle. In this way, by utilizing the stress difference generated by the difference between the diameter of one side and the diameter of the other side of the conductive path 22 in the anisotropic conductive material, and making it 0.1≦R≦0.98, the individualized anisotropic conductive material 17 is configured to be warped, which makes it easy to handle the anisotropic conductive material 17 and allows for good handling.

[0025] 1 is provided on the surface 20a of the insulating base material 20, and for example, the entire surface 20a is covered with the resin layer 18. For example, if the conductive path 22 has a protruding portion 22a, the resin layer 18 embeds the protruding portion 22a. That is, the resin layer 18 covers the end of the conductive path 22 protruding from the surface 20a of the insulating base material 20, and protects the protruding portion 22a.

[0026] The structure of the laminate will now be described in more detail. (Support) The support 12 supports the anisotropic conductive member 16 as described above, and is made of, for example, a silicon substrate. The silicon substrate may be, for example, a silicon wafer. The support 12 may be made of, for example, SiC, SiN, GaN, or alumina (Al 2 O 3 Examples of the substrate that can be used include ceramic substrates such as FR-4 (Flame Retardant Type 4) substrates, glass substrates, fiber-reinforced plastic substrates, and metal substrates. Fiber-reinforced plastic substrates include FR-4 (Flame Retardant Type 4) substrates, which are printed wiring boards. Moreover, a flexible and transparent material can be used as the support 12. Examples of the flexible and transparent support 12 include plastic films such as PET (polyethylene terephthalate), polycycloolefin, polycarbonate, acrylic resin, PEN (polyethylene naphthalate), PE (polyethylene), PP (polypropylene), polystyrene, polyvinyl chloride, polyvinylidene chloride, and TAC (triacetyl cellulose). Here, "transparent" means that the transmittance is 80% or more for light of a wavelength used for alignment. Therefore, although the transmittance may be low over the entire visible light range of 400 to 800 nm, it is preferable that the transmittance is 80% or more over the entire visible light range of 400 to 800 nm. The transmittance is measured by a spectrophotometer. When an adhesive layer 14 whose adhesive strength decreases due to ultraviolet light is used, it is preferable that the support 12 is transparent as described above, that is, that the ultraviolet light transmittance of the support 12 is 80% or more, because this makes it easier to irradiate the adhesive layer 14 with ultraviolet light. Here, ultraviolet light refers to light having a wavelength of 10 to 400 nm. The preferred wavelength range of ultraviolet light is 200 to 400 nm, and the more preferred wavelength range of ultraviolet light is 300 to 400 nm.

[0027] (adhesive layer) The adhesive layer is preferably one whose adhesive strength decreases in a specific temperature range or decreases due to ultraviolet light. For example, the adhesive layer is preferably a peelable film with a pressure-sensitive adhesive layer, and more preferably a film with a pressure-sensitive adhesive layer whose adhesiveness is weakened and peelable by treatment in a specific temperature range or exposure to ultraviolet light. The adhesive layer used is one whose adhesive strength decreases at a temperature of, for example, 110° C. or higher.

[0028] The above-mentioned film with an adhesive layer is not particularly limited, and examples thereof include a heat-peeling type resin layer and an ultraviolet (UV) peelable type resin layer. Here, the thermal peeling type resin layer has adhesive strength at room temperature and can be easily peeled off simply by heating, and in many cases, foaming microcapsules or the like are used. Specific examples of adhesives constituting the adhesive layer include rubber-based adhesives, acrylic-based adhesives, vinyl alkyl ether-based adhesives, silicone-based adhesives, polyester-based adhesives, polyamide-based adhesives, urethane-based adhesives, and styrene-diene block copolymer-based adhesives.

[0029] Furthermore, the UV peelable resin layer has a UV curable adhesive layer, which loses its adhesive strength upon curing and becomes peelable. Examples of the UV-curable adhesive layer include a polymer having a carbon-carbon double bond introduced into a polymer side chain, main chain, or main chain end in a base polymer. The base polymer having a carbon-carbon double bond preferably has an acrylic polymer as a basic skeleton. Furthermore, the acrylic polymer may contain a polyfunctional monomer or the like as a copolymerizable monomer component for crosslinking, if necessary. The base polymer having a carbon-carbon double bond can be used alone, but can also be blended with a UV-curable monomer or oligomer. The UV-curable adhesive layer is preferably used in combination with a photopolymerization initiator for curing by UV irradiation. Examples of the photopolymerization initiator include benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acylphosphinoxides, and acylphosphonates.

[0030] Commercially available products of the thermal peelable resin layer include, for example, Intelimer (registered trademark) tapes such as WS5130C02 and WS5130C10 (manufactured by Nitta Corporation); Somatac (registered trademark) TE series (manufactured by Somar Corporation); No. 3198, No. 3198LS, No. 3198M, No. 3198MS, No. 3198H, No. 3195, No. 3196, No. 3195M, No. 3195MS, No. 3195H ...5H, No. 3198LS, No. 3198M, No. 3198MS, No. 3198MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 3195MS, No. 31 and the like. Examples of the Riva Alpha (registered trademark) series (manufactured by Nitto Denko Corporation) include No.3195HS, No.3195V, No.3195VS, No.319Y-4L, No.319Y-4LS, No.319Y-4M, No.319Y-4MS, No.319Y-4H, No.319Y-4HS, No.319Y-4LSC, No.31935MS, No.31935HS, No.3193M, and No.3193MS.

[0031] Examples of commercially available UV-peeling resin layers include ELP Holder (registered trademark) such as ELP DU-300, ELP DU-2385KS, ELP DU-2187G, ELP NBD-3190K, and ELP UE-2091J (manufactured by Nitto Denko Corporation); Adwill D-210, Adwill D-203, Adwill D-202, Adwill D-175, and Adwill D-675 (all manufactured by Lintec Corporation); SUMILITE (registered trademark) FLS N8000 series (manufactured by Sumitomo Bakelite Co., Ltd.); and dicing tapes such as UC353EP-110 (manufactured by Furukawa Electric Co., Ltd.); ELP RF-7232DB, ELP Backgrind tapes such as UB-5133D (all manufactured by Nitto Denko Corporation); SP-575B-150, SP-541B-205, SP-537T-160, and SP-537T-230 (all manufactured by Furukawa Electric Co., Ltd.) can be used.

[0032] The method for attaching the above-mentioned adhesive layer-attached film is not particularly limited, and the film can be attached using a conventionally known surface protection tape attachment device and laminator. The average thickness hm of the adhesive layer 14 is preferably 10 μm or less, more preferably 5 μm or less, and further preferably 1 μm or less. When the average thickness hm of the adhesive layer 14 is 10 μm or less, the protruding portions of the conductive paths 22 can be protected and sufficient adhesive strength can be exerted to the support 12. The average thickness hm of the adhesive layer 14 is the average distance from the rear surface 20b of the insulating substrate 20. The average thickness hm of the adhesive layer 14 is measured as follows. First, the adhesive layer 14 is cut in the thickness direction Dt of the anisotropic conductive member 16, and a photographed image of the cut cross section is obtained using a field emission scanning electron microscope (FE-SEM). In the photographed image, the distance from the rear surface 20b of the insulating base material 20 corresponding to the adhesive layer is measured at 10 points, and the average length of the 10 measured points is calculated. This average value is the average thickness hm of the adhesive layer 14.

[0033] (Insulating substrate) The insulating substrate 20 has electrical insulation properties and keeps a plurality of conductive paths 22, which are made of a conductive material, electrically insulated from one another. The insulating substrate 20 has a plurality of pores 21 in which the conductive paths 22 are formed. The composition of the insulating substrate will be described later. The length of the insulating substrate 20 in the thickness direction Dt, i.e., the thickness ht of the insulating substrate 20, is preferably in the range of 1 to 1000 μm, more preferably in the range of 5 to 500 μm, even more preferably in the range of 10 to 300 μm, and particularly preferably 10 μm or more and 30 μm or less. When the thickness of the insulating substrate 20 is in this range, the insulating substrate 20 becomes easy to handle.

[0034] The thickness of the insulating substrate is measured as follows. First, the insulating substrate is cut in the thickness direction Dt using a focused ion beam (FIB), and the cross section is photographed at a magnification of 50,000 times using a field emission scanning electron microscope (FE-SEM). In the photographed image, the length of 10 points corresponding to the thickness of the insulating substrate is measured, and the average length of the 10 measured points is calculated. This average value is the thickness of the insulating substrate.

[0035] The insulating substrate 20 is made of, for example, an inorganic material and has an electrical resistivity (10 14 There are no particular limitations as long as the material has a resistivity of about Ω·cm. Note that "made of inorganic materials" is a definition to distinguish it from the polymeric material that makes up the resin layer described below, and is not a definition that is limited to insulating base materials made up of inorganic materials only, but a definition that has inorganic materials as the main component (50 mass % or more).

[0036] Examples of insulating substrates include metal oxide substrates, metal nitride substrates, glass substrates, ceramic substrates such as silicon carbide and silicon nitride, carbon substrates such as diamond-like carbon, polyimide substrates, composite materials thereof, etc. In addition to the above, the insulating substrate may be, for example, a substrate in which a film is formed on an organic material having a through hole with an inorganic material containing 50 mass % or more of a ceramic material or a carbon material.

[0037] The insulating substrate has through-holes formed therein that are micropores having a desired average opening diameter. The insulating substrate is preferably a metal oxide substrate, and more preferably an anodized film of a valve metal, because it is easy to form conductive paths therein. Here, specific examples of valve metals include aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, and antimony. Among these, anodized aluminum film (base material) is preferable because it has good dimensional stability and is relatively inexpensive. For this reason, it is preferable to use an aluminum substrate to form anodized film, which is an insulating base material, and manufacture an anisotropic conductive member. The thickness of the anodized film is the same as the thickness of the insulating base material 20 described above.

[0038] <Aluminum substrate> The aluminum substrate for forming an anodized film, which is an insulating base material, is not particularly limited, and specific examples thereof include a pure aluminum plate; an alloy plate containing aluminum as the main component and trace amounts of other elements; a substrate in which high-purity aluminum is vapor-deposited onto low-purity aluminum (e.g., recycled materials); a substrate in which the surface of a silicon wafer, quartz, glass, or the like is coated with high-purity aluminum by a method such as vapor deposition or sputtering; a resin substrate laminated with aluminum; and the like.

[0039] In the aluminum substrate, the surface on which the anodized film is provided by the anodizing process has an aluminum purity of preferably 99.5% by mass or more, more preferably 99.9% by mass or more, and even more preferably 99.99% by mass or more. When the aluminum purity is within the above range, the through-hole arrangement has sufficient regularity. The micropores become fine pores. The aluminum substrate is not particularly limited as long as it is capable of forming an anodized film, and for example, JIS (Japanese Industrial Standards) 1050 material is used.

[0040] In addition, it is preferable that the surface of one side of the aluminum substrate to be subjected to the anodizing process is previously subjected to a heat treatment, a degreasing treatment and a mirror finish treatment. Here, the heat treatment, degreasing treatment and mirror finish treatment may be the same as those described in paragraphs

[0044] to

[0054] of JP2008-270158A. The mirror finish treatment prior to the anodizing treatment is, for example, electrolytic polishing, and for the electrolytic polishing, for example, an electrolytic polishing solution containing phosphoric acid is used.

[0041] <Average pore diameter> The average diameter of the pores is preferably 1 μm or less, more preferably 5 to 500 nm, even more preferably 20 to 400 nm, even more preferably 40 to 200 nm, and most preferably 50 to 100 nm. When the average diameter of pores 21 is 1 μm or less and within the above range, conductive paths 22 having the above average diameter can be obtained. The average diameter of the pores 21 is obtained by photographing the surface of the insulating substrate 20 from directly above at a magnification of 100 to 10,000 times using a scanning electron microscope. At least 20 pores that are connected in a ring shape are extracted from the photographed image, and their diameters are measured to determine the opening diameter. The average of these opening diameters is calculated as the average diameter of the pores. The magnification can be appropriately selected from the above range so that a captured image can be obtained that can extract 20 or more pores. The aperture diameter is measured by measuring the maximum value of the distance between the ends of the pore portion. That is, since the shape of the opening of the pore is not limited to a substantially circular shape, when the shape of the opening is non-circular, the maximum value of the distance between the ends of the pore portion is taken as the aperture diameter. Therefore, for example, even in the case of a pore having a shape in which two or more pores are integrated, this is regarded as one pore, and the maximum value of the distance between the ends of the pore portion is taken as the aperture diameter.

[0042] <Conduction Path> As described above, the plurality of conductive paths 22 are provided in the insulating base material 20, for example, an anodized film, in a state in which they are electrically insulated from each other. Each of the plurality of conductive paths 22 is a columnar conductor having electrical conductivity, and is made of a conductive material. The conductive material is not particularly limited, and may be, for example, a metal. Specific examples of metals include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), zinc (Zn), and cobalt (Co). From the viewpoint of electrical conductivity, copper, gold, aluminum, nickel, and cobalt are preferred, copper and gold are more preferred, and copper is most preferred. Metals have superior ductility and other properties compared to oxide conductors, and are easily deformed, and are also easily deformed by compression during bonding, so it is preferable to form the conductor from a metal. The height of the conductive paths 22 in the thickness direction Dt is preferably 10 to 300 μm, and more preferably 20 to 30 μm. The height of the conductive paths 22 is the protrusion length ha of the protrusion 22a + the thickness ht of the insulating substrate 20 + the protrusion length hb of the protrusion 22b.

[0043] <Conduit shape> The conductive paths 22 have a diameter Da on the front surface 20a of the insulating substrate 20 and a diameter Db on the back surface 20b of the insulating substrate 20. However, the average diameter of the conductive paths 22 is preferably 1 μm or less, more preferably 10 nm or more and 500 nm or less, even more preferably 20 to 400 nm, even more preferably 40 to 200 nm, and most preferably 50 to 100 nm. The density of the conductive paths 22 on one side and the other side of the insulating base material 20, i.e., the density of the conductive paths 22 on the front side 20a and the back side 20b of the insulating base material 20, is set to 1×10 6 ~1×10 10 / mm 2 The density of the conductive paths 22 is preferably 2×10 6 ~8×10 9 / mm 2 More preferably, 5×10 6 ~5×10 9 / mm 2 It is more preferable that: Furthermore, the center-to-center distance p (see FIG. 1) between adjacent conductive paths 22 is preferably 20 nm to 500 nm, more preferably 40 nm to 200 nm, and even more preferably 50 nm to 140 nm. Regarding the conductive paths 22, the distance w between adjacent protrusions (see FIG. 1) is 20 nm to 200 nm, and preferably 40 nm to 100 nm. When the distance between adjacent protrusions is within the above range, the distance between the conductive paths 22 can be maintained even on the front surface 20a or back surface 20b of the insulating substrate 20 of the conductive paths 22. This prevents short circuits in the conductive paths 22 during bonding, and increases reliability during bonding.

[0044] The diameter Da of the conductive path 22 on the front surface 20a of the insulating substrate 20 and the diameter Db of the conductive path 22 on the back surface 20b of the insulating substrate 20 are each measured as follows. First, the insulating base material 20 of the anisotropic conductive member 16 is cut in the thickness direction Dt using a focused ion beam, and a photographic image of the cross section is obtained at a magnification of 50,000 times using a field emission scanning electron microscope (FE-SEM). In the photographic image, 10 conductive paths 22 are selected, and the lengths of the portions corresponding to the diameters Da and Db of the selected 10 conductive paths 22 are measured. The average value of the lengths corresponding to the diameter Da for the measured 10 conductive paths 22 is calculated, and this is defined as the diameter Da. In addition, the average value of the lengths corresponding to the diameter Db for the 10 conductive paths 22 is calculated, and this is defined as the diameter Db. Furthermore, the diameter Da of the conductive paths 22 on the front surface 20a of the insulating substrate 20 can be measured from a surface image of the front surface 20a of the insulating substrate 20 obtained by a field emission scanning electron microscope (FE-SEM). The diameter Db of the conductive paths 22 on the back surface 20b of the insulating substrate 20 can be measured from a back surface image of the back surface 20b of the insulating substrate 20 obtained by a field emission scanning electron microscope (FE-SEM). When using the front and back images as described above, if the protruding parts make it difficult to measure the diameters Da and Db, the protruding parts are removed by dissolving or the like. This causes pores to appear. The opening diameters of the pores in the front image in this state can be measured, and the opening diameters of the pores in the front image can be used in place of the diameter Da. Similarly, the opening diameters of the pores in the back image in this state can be measured, and the opening diameters of the pores in the back image can be used in place of the diameter Db. The opening diameter of the pores is measured as follows. First, 50 pieces corresponding to the pores are selected, and the diameters of the parts corresponding to the openings of the pores are measured for the 50 pieces corresponding to the pores. The average value of the diameters of the parts corresponding to the openings of the measured pores is calculated, and this average value is regarded as the opening diameter of the pores.

[0045] The center-to-center distance p and interval w between adjacent conductive paths 22 are measured as follows. First, a scanning electron microscope is used to photograph the surface 20a of the insulating substrate 20 from directly above at a magnification of 100 to 10,000 times to obtain a photographed image. In the photographed image of the insulating substrate 20, a conductive path 22 to be measured is arbitrarily selected. The center position (not shown) of the selected conductive path 22 is identified. The distance between the center positions of adjacent conductive paths is determined at 10 points. The average value is set as the center-to-center distance p between adjacent conductive paths 22. The center position is the center position of the area corresponding to the conductive path 22 in the photographed image. A known image analysis method can be used to calculate the center position of the area in the photographed image. Further, a distance equivalent to the interval w between adjacent conductive paths is measured at 10 points in the selected conductive path 22. The average value of the lengths measured at the 10 points is defined as the interval w. The magnification of any of the above-mentioned captured images can be appropriately selected within the above-mentioned range so as to obtain a captured image from which 20 or more conductive paths 22 can be extracted.

[0046] In the conductive path 22, the protrusion length ha of the protrusion 22a (see FIG. 1) and the protrusion length hb of the protrusion 22b are preferably 10 nm to 1000 nm, and more preferably 50 nm to 500 nm. If the protrusion length ha and the protrusion length hb are 10 nm to 1000 nm, the bondability to the bonded member is good. The protrusion length ha is the amount by which the conductive path 22 protrudes from the surface 20a of the insulating base material 20. In other words, the protrusion length ha is the length of the protrusion 22a from the surface 20a of the insulating base material 20. The protrusion length hb is the amount of protrusion of the conductive path 22 from the rear surface 20b of the insulating substrate 20. In other words, the protrusion length hb is the length of the protrusion 22b from the rear surface 20b of the insulating substrate 20. The protrusion length ha and the protrusion length hb are measured by cutting the insulating substrate 20 in the thickness direction Dt using a focused ion beam, and capturing an image of the cross section at a magnification of 50,000 times using a field emission scanning electron microscope (FE-SEM). In the captured image, ten pieces corresponding to the conductive paths 22 are selected, and the lengths of the parts corresponding to the lengths of the protrusions 22a and 22b are measured for each of the ten selected conductive paths 22. The average value of the lengths corresponding to the lengths of the protrusions 22a of the ten measured conductive paths 22 is calculated, and this is regarded as the length of the protrusions 22a. The average value of the lengths corresponding to the lengths of the protrusions 22b is also calculated, and this is regarded as the length of the protrusions 22b.

[0047] [Resin Layer] As described above, the resin layer covers at least one of the front and back surfaces of the insulating substrate, and protects the insulating substrate and the conductive paths. For example, if the conductive paths have protruding portions, the resin layer buries the protruding portions. That is, the resin layer covers the ends of the conductive paths protruding from the insulating substrate, and protects the protruding portions. In order to exert the above-mentioned functions, the resin layer preferably exhibits fluidity in a temperature range of, for example, 50° C. to 200° C. and hardens at temperatures of 200° C. or higher. The resin layer is, for example, a thermoplastic layer made of a thermoplastic resin or the like, and the resin layer will be described in detail later. The average thickness hj of the resin layer 18 is preferably 10 μm or less, more preferably 5 μm or less, and further preferably 1 μm or less. If the average thickness hj of the resin layer 18 is 10 μm or less as described above, the resin layer 18 can sufficiently protect the protruding parts of the conductive paths 22 and fill the periphery of the electrodes when bonding a semiconductor device or the like. The average thickness hj of the resin layer 18 is the average distance from the surface 20a of the insulating substrate 20. The average thickness hj of the resin layer 18 is measured as follows. First, the resin layer 18 is cut in the thickness direction Dt of the anisotropic conductive member 16, and a photographed image of the cut cross section is obtained using a field emission scanning electron microscope (FE-SEM). In the photographed image, the distance from the surface 20a of the insulating base material 20 corresponding to the resin layer is measured at 10 points, and the average length of the 10 measured points is calculated. This average value is the average thickness hj of the resin layer 18.

[0048] The resin layer may have the following composition: The composition of the resin layer will be described below: For example, the resin layer contains a polymer material and may contain an antioxidant material. Specific examples of the resin material constituting the resin layer include thermoplastic resins such as ethylene copolymers, polyamide resins, polyester resins, polyurethane resins, polyolefin resins, acrylic resins, acrylonitrile resins, and cellulose resins. Polyacrylonitrile can also be used as the resin material constituting the resin layer. As the resin layer, in addition to those described above, for example, a resin layer containing a main composition containing an acrylic polymer, an acrylic monomer, and a maleimide compound described in WO 2022 / 163260 can be used. From the viewpoint of transportability and ease of use as an anisotropic conductive member, the resin layer is preferably a peelable film with an adhesive layer, and more preferably a film with an adhesive layer whose adhesiveness is weakened by heat treatment or ultraviolet light exposure treatment and becomes peelable. The peelable film with an adhesive layer can be the same as the adhesive layer described above. The resin layer may further use compositions described in paragraphs

[0110] to

[0125] of JP2019-153415A.

[0049] (Another example of anisotropic conductive material) Fig. 5 is a schematic plan view showing another example of an anisotropic conductive member of the first example of the laminate according to the embodiment of the present invention. In Fig. 5, the same components as those in the laminate 10 shown in Figs. 1 and 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. The anisotropically conductive member 16a shown in Fig. 5 differs from the anisotropically conductive member 16 shown in Fig. 1 in that the insulating substrate 20 has a crack 23, but the rest of the configuration is the same as that of the anisotropically conductive member 16 shown in Fig. 1. The anisotropically conductive member 16 may have a crack 23. The anisotropically conductive member obtained by dividing the anisotropically conductive member 16a shown in Fig. 5 also has a crack. As described above, the individualized anisotropic conductive member 17 (see FIG. 4) is warped, and when this is used as an electronic connection member, the anisotropic conductive member becomes flat. At this time, distortion occurs in the anisotropic conductive member. The distortion generated in the anisotropic conductive member is absorbed by the cracks 23. For this reason, when the deformability of the insulating base material 20 is small, it is effective for the anisotropic conductive member 16a to have the cracks 23.

[0050] The anisotropic conductive member 16a has an average total crack length per unit area of ​​1 μm / mm in the electrode connection region connected to the electrode. 2 It is preferable that: In addition, the anisotropically conductive member 16 has an average total crack length per unit area of ​​0.01 μm / mm in the electrode non-connected region that is not connected to the electrode. 2 More preferably, it is equal to or greater than this. The electrode refers to an electrode to be connected, such as an electrode of a semiconductor element, an interposer, or the like.

[0051] The above-mentioned average value of the total crack length per unit area is a value in the state of an individualized anisotropic conductive member. The method for measuring the average value of the total crack length per unit area will be explained later. Note that the crack refers to one with a length of 10 μm or more.

[0052] In the anisotropically conductive member 16a, in the electrode connection region connected to the electrode, as described above, the average value of the total crack length per unit area is 1 μm / mm 2 If it is equal to or less than this, electrical continuity and electrical insulation are maintained. Since it is preferable that there are no cracks in the electrode connection region, the lower limit of the average value of the total crack length per unit area in the electrode connection region is preferably close to zero, and ideally is zero.

[0053] In the anisotropically conductive member 16a, in the electrode non-connected region not connected to the electrode, the average total crack length per unit area is 0.01 μm / mm 2 Even in the above cases, electrical continuity and electrical insulation are maintained. The average total crack length in the electrode non-connected area is 1000 μm / mm 2 If it exceeds this value, the anisotropically conductive members tend to fall off or overlap, resulting in poor bondability.

[0054] For example, the anisotropically conductive member 16a has cracks 23, but the amount of cracks 23 is different between the electrode connection region connected to the electrode and the electrode non-connection region not connected to the electrode. The average value of the total crack length per unit area of ​​the electrode connection region is preferably smaller than the average value of the total crack length per unit area of ​​the electrode non-connection region. The smaller average value of the total crack length per unit area of ​​the electrode connection region ensures the conductivity of the anisotropically conductive member 16. In this case, the electrode non-connection region has a relatively larger average value of the total crack length and more cracks 23. The anisotropically conductive member 16a has a reduced conductivity due to the presence of the cracks 23, and as a result, the electrical insulation in the direction x (see FIG. 1) of the insulating base material 20 (see FIG. 1) in the electrode non-connection region where the cracks 23 are more is increased. For this reason, when the individualized anisotropically conductive member is used as an electronic connection member, the electrical conductivity and electrical insulation are maintained.

[0055] As described above, the average value of the total crack length per unit area is a value in the state of an individualized anisotropically conductive member. A method for measuring the average value of the total crack length per unit area will be described. First, the anisotropically conductive member 16a is observed with an infrared microscope. Since the anisotropically conductive member 16a does not transmit infrared light, the cracks 23 in the anisotropically conductive member 16a can be clearly detected by using infrared light. An infrared microscope is used to obtain an inspection image of the entire planar view of the individualized anisotropic conductive member. The obtained inspection image is subjected to a binarization process to obtain a binarized image of the inspection image. Among the black parts in the binarized image, those that are 10 μm or more in length correspond to cracks. The length of the black parts in the binarized image is measured. As described above, cracks are 10 μm or more in length, so cracks are extracted from the black parts using 10 μm as a threshold value. The total length of the extracted cracks is obtained. In addition, the area of ​​the binarized image is calculated from the field of view area. The total crack length per unit area can be obtained from the crack length and the area of ​​the binarized image. Then, the average value of the obtained total crack length per unit area is calculated. In this manner, the average value of the total crack length per unit area can be obtained.

[0056] [Second example of laminate] Fig. 6 is a schematic cross-sectional view showing a second example of the laminate according to the embodiment of the present invention. In Fig. 6, the same components as those in the laminate 10 shown in Figs. 1 and 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. The laminate 11 shown in FIG. 6 differs from the laminate 10 shown in FIG. 1 in that the support 12 is a bonding member 32 having a metal layer 30, and the metal layer 30 is exposed from the adhesive layer 14; otherwise, the configuration is the same as that of the laminate 10 shown in FIG. 1. The support 12 is a bonding member 32 having a metal layer 30 exposed from the adhesive layer 14, and even if the bonding area with the anisotropic conductive member 16 is small, the anisotropic conductive member 16 that warps can be bonded. Therefore, when a singulated anisotropic conductive member is used as an electronic connection member, if the connection target has an electrode corresponding to the metal layer 30 and a resin layer corresponding to the adhesive layer 14, the warping of the singulated anisotropic conductive member is absorbed by the resin layer corresponding to the adhesive layer 14, and the anisotropic conductive member can be suitably bonded to the connection target.

[0057] ((Anisotropic conductive material connection object)) When the anisotropic conductive member is used as an electronic connection member, the connection object is, for example, a semiconductor element, an electrode, or an element region. Examples of the object having an electrode include a semiconductor element that exerts a specific function by itself, but also includes an object that exerts a specific function by assembling a plurality of elements. Furthermore, it also includes an object that only transmits an electric signal such as a wiring member, and a printed wiring board is also included in the object having an electrode. The element region is a region in which various element configuration circuits and the like for functioning as electronic elements are formed. The element region is, for example, a region in which a memory circuit such as a flash memory, a logic circuit such as a microprocessor and an FPGA (field-programmable gate array), a communication module such as a wireless tag, and wiring are formed. In addition to the above, MEMS (Micro Electro Mechanical Systems) may be formed in the element region. Examples of MEMS include sensors, actuators, and antennas. Examples of sensors include various sensors such as acceleration, sound, and light sensors. The optical sensor is not particularly limited as long as it can detect light, and for example, a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary Metal Oxide Semiconductor) image sensor is used. As described above, the element region has an element configuration circuit and the like formed therein, and electrodes (not shown) are provided to electrically connect the semiconductor chip to the outside. The element region has an electrode region in which electrodes are formed. The electrodes in the element region are, for example, Cu posts. The electrode region is basically a region that includes all the formed electrodes. However, if the electrodes are provided discretely, the region in which each electrode is provided is also called the electrode region. The structure may be in the form of an individual piece such as a semiconductor chip, a semiconductor wafer, or a wiring layer. In addition, the structure is joined to an object to be connected, but the object to be connected is not particularly limited to the above-described semiconductor element or the like. For example, a semiconductor element in a wafer state, a semiconductor element in a chip state, a printed wiring board, a heat sink, etc. can be the object to be connected.

[0058] ((semiconductor element)) In addition to the above, the semiconductor element may be, for example, a logic LSI (Large Scale Integration) (e.g., ASIC (Application Specific Integrated Circuit), FPGA (Field Programmable Gate Array), ASSP (Application Specific Standard Product), etc.), a microprocessor (e.g., CPU (Central Processing Unit), GPU (Graphics Processing Unit), etc.), a memory (e.g., DRAM (Dynamic Random Access Memory), HMC (Hybrid Memory Cube), MRAM (Magnetic RAM), PCM (Phase-Change Memory), ReRAM (Resistive RAM), FeRAM (Ferroelectric RAM), flash memory (NAND (Not AND) flash), etc.), an LED (Light Emitting Diode) (e.g., micro flash of a mobile terminal, an in-vehicle device, a projector light source, an LCD backlight, general lighting, etc.), a power device, an analog IC (Integrated Circuit), (e.g., DC (Direct Current (DC)-DC (Direct Current) converters, Insulated Gate Bipolar Transistors (IGBTs), etc.), MEMS (Micro Electro Mechanical Systems) (e.g., acceleration sensors, pressure sensors, vibrators, gyro sensors, etc.), wireless (e.g., GPS (Global Positioning System), FM (Frequency Modulation), NFC (Nearfield communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network), etc.), discrete elements, BSI (Back Side Illumination), CIS (Contact ImageSensor, camera module, CMOS (Complementary Metal Oxide Semiconductor), passive device, SAW (Surface Acoustic Wave) filter, RF (Radio Frequency) filter, RFIPD (Radio Frequency Integrated Passive Devices), BB (Broadband), etc. The semiconductor element is, for example, a self - contained one, and a single semiconductor element exhibits a specific function such as a circuit or a sensor. The semiconductor element may have an interposer function. Also, for example, it is possible to stack a plurality of devices such as a logic chip having a logic circuit and a memory chip on a device having an interposer function. Also, in this case, even if the electrode sizes are different for each device, they can be joined.

[0059] (An example of a method for manufacturing a laminate) Next, a method for manufacturing a laminate will be described. FIGS. 7 to 15 are schematic cross - sectional views showing an example of a method for manufacturing a laminate according to an embodiment of the present invention in the order of steps. In FIGS. 7 to 15, the same components as those of the laminate 10 shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed descriptions thereof are omitted. In an example of the method for manufacturing a laminate, in the anisotropic conductive member 16 of the laminate 10 shown in FIG. 1, an example in which the insulating base material 20 is composed of an anodic oxide film of aluminum will be described. In order to form an anodic oxide film of aluminum, an aluminum substrate is used. Therefore, in an example of the method for manufacturing a laminate, first, as shown in FIG. 7, an aluminum substrate 40 is prepared. The size and thickness of the aluminum substrate 40 are appropriately determined according to the thickness of the insulating base material 20 (see FIG. 1) of the anisotropic conductive member 16 finally obtained, the apparatus for processing, etc. The aluminum substrate 40 is, for example, a plate material having a circular outer shape. Note that it is not limited to an aluminum substrate, and a metal substrate on which an electrically insulating insulating film can be formed can be used. A valve metal capable of forming an anodic oxide film by anodization can be used.

[0060] Next, one surface 40a (see FIG. 7) of the aluminum substrate 40 is anodized. As a result, one surface 40a (see FIG. 7) of the aluminum substrate 40 is anodized to form an anodized film 44 having a plurality of pores 21 extending in the thickness direction Dt of the aluminum substrate 40, as shown in FIG. 8. The pores 21 of the anodized film 44 have a larger diameter on the surface 44a side of the anodized film 44 than on the aluminum substrate 40 side. The anodized film 44 is the insulating base material 20 (see FIG. 1) described above. As shown in FIG. 8, a barrier layer 43 exists at the bottom of each pore 21. The above-mentioned anodizing process is called an anodizing process. As described above, the anodized film 44 having the multiple pores 21 has a barrier layer 43 at the bottom of each pore 21, but the barrier layer 43 is removed. As a result, an anodized film 44 having the multiple pores 21 and no barrier layer 43 (see FIG. 9) is obtained. The step of removing the barrier layer 43 is referred to as a barrier layer removal step.

[0061] In the barrier layer removal step, an alkaline aqueous solution containing ions of a metal M1 having a higher hydrogen overvoltage than aluminum is used to remove the barrier layer 43 of the anodic oxide film 44, and at the same time, a metal layer 45a (see FIG. 10) made of a metal (metal M1) is formed on a surface 42d (see FIG. 9) of a bottom 42c (see FIG. 9) of the pore 21. As a result, the aluminum substrate 40 exposed in the pore 21 is covered with the metal layer 45a. As a result, when the pore 21 is filled with metal by plating, plating is facilitated, and the pore is prevented from being insufficiently filled with metal, and the pore 21 is prevented from being left unfilled with metal, thereby preventing poor formation of the conductive path 22 (see FIG. 1). The alkaline aqueous solution containing the metal M1 ions may further contain an aluminum ion-containing compound (sodium aluminate, aluminum hydroxide, aluminum oxide, etc.). The content of the aluminum ion-containing compound is preferably 0.1 to 20 g / L, more preferably 0.3 to 12 g / L, and even more preferably 0.5 to 6 g / L, calculated as the amount of aluminum ions.

[0062] Next, plating is performed from the surface 44a of the anodic oxide film 44 having a plurality of pores 21 extending in the thickness direction Dt. In this case, the metal layer 45a can be used as an electrode for electrolytic plating. A metal 45b is used for plating, and plating proceeds starting from the metal layer 45a formed on the surface 42d (see FIG. 9) of the bottom 42c (see FIG. 9) of the pore 21. As a result, as shown in FIG. 10, the metal 45b is filled inside the pores 21 of the anodic oxide film 44 as a conductive material constituting the conductive path 22. The conductive path 22 is formed by filling the inside of the pores 21 with the metal 45b. The metal layer 45a and the metal 45b are collectively referred to as the filled metal 45. The process of filling the pores 21 of the anodic oxide film 44 with metal 45b to form the conductive paths 22 is referred to as the metal filling process. As described above, the conductive paths 22 are made of a conductive material, and are not limited to being filled with metal. Electrolytic plating is used in the metal filling process, which will be described in detail later. Note that the surface 44a of the anodic oxide film 44 corresponds to one surface of the insulating base material 20. The process of filling the pores 21 of the anodic oxide film 44 with a conductive material, including metal and non-metal materials, to form the conductive paths 22 is simply referred to as the filling process.

[0063] After the metal filling step, a polishing step is carried out to polish and smooth the surface 44a of the anodic oxide film 44 shown in Fig. 10. For the polishing, for example, a chemical mechanical polishing (CMP) process is used. Next, after the polishing step, as shown in FIG. 11, the surface 20a of the anodized film 44 on the side where the aluminum substrate 40 is not provided is partially removed in the thickness direction Dt, and the metal 45 filled in the metal filling step is made to protrude from the surface 44a of the anodized film 44. That is, the conductive path 22 is made to protrude from the surface 44a of the anodized film 44. As a result, the protruding portion 22b is obtained. The step of making the conductive path 22 protrude from the surface 44a of the anodized film 44 is called the surface protruding step. Note that the surface protruding step does not necessarily have to be performed. If the surface protruding step is not performed, the above-mentioned protruding portion 22b is not formed.

[0064] After the surface protrusion step, the aluminum substrate 40 is removed as shown in Fig. 12. The step of removing the aluminum substrate 40 is called a substrate removing step. 13, the anodized film 44 is bonded to the support 12 with the surface 44a of the anodized film 44 facing the surface 12a of the support 12 using the adhesive layer 14. In this case, for example, a film with an adhesive layer is attached to the surface 12a of the support 12 as the adhesive layer 14, and then the surface 44a of the anodized film 44 is bonded to the film with the adhesive layer with the surface 44a facing the surface 12a of the support 12. The process of bonding the anodized film 44 to the support 12 using the adhesive layer 14 described above is called a support forming process. After the support formation step, a polishing step is carried out to polish and smooth the rear surface 44b of the anodic oxide film 44. For example, CMP processing is used for the polishing.

[0065] As described above, the diameter of the pores 21 is larger on the front surface 44a side of the anodized film 44 than on the aluminum substrate 40 side, and the diameter of the pores 21 is different between the front surface 44a of the anodized film 44 and the rear surface 44b of the anodized film 44. In the anodized film 44, the diameter of the pores 21 is larger on the front surface 44a side than on the rear surface 44b. As a result, the diameter of the conductive paths 22 is different between the front surface 44a of the anodized film 44 and the rear surface 44b of the anodized film 44, and the diameter of the conductive paths 22 is larger on the front surface 44a side of the anodized film 44. The surface 44a of the anodic oxide film 44 corresponds to the back surface 20b of the insulating base material 20, and the back surface 44b of the anodic oxide film 44 corresponds to the surface 20a of the insulating base material 20. Therefore, the diameter of the conductive path 22 can be adjusted by adjusting the amount of polishing of the surface 44a of the anodic oxide film 44 or the back surface 44b of the anodic oxide film 44. For example, the ratio between the diameter Da and the diameter Db can be adjusted by adjusting the amount of polishing of the back surface 44b of the anodic oxide film 44. The ratio between the diameter Da and the diameter Db can also be adjusted by adjusting the amount of polishing of the surface 44a of the anodic oxide film 44 and the amount of polishing of the back surface 44b of the anodic oxide film 44. The amount of polishing can be adjusted by, for example, the polishing time.

[0066] 14, after the polishing process of the back surface 44b of the anodized film 44, the back surface 44b of the anodized film 44 is partially removed in the thickness direction Dt, and the metal 45 filled in the metal filling process, i.e., the conductive path 22, is made to protrude from the back surface 44b of the anodized film 44. As a result, the protrusion 22a is obtained, and the anisotropic conductive member 16 is formed. As shown in FIG. 14, the conductive paths 22 protrude from both a front surface 44a and a back surface 44b of the anodic oxide film 44, and the conductive paths 22 have protruding portions 22a and 22b. The above-mentioned step of making the conductive path 22 protrude from the back surface 44b of the anodic oxide film 44 is called a back surface protruding step. Note that the back surface protruding step is not necessarily performed. If the back surface protruding step is not performed, the above-mentioned protruding portion 22a is not formed. The above-mentioned front surface protruding step and back surface protruding step may be both steps, or one of the front surface protruding step and back surface protruding step may be one. The front surface protruding step and back surface protruding step are both "protruding steps", and both the front surface protruding step and back surface protruding step are protruding steps. The protruding step is also called a trimming step. When the protruding step is performed, the thickness of the anodic oxide film 44 after the protruding step is the thickness of the insulating base material.

[0067] 15, a resin layer 18 is formed to cover the entire back surface 44b of the anodized film 44 from which the protruding portion 22a protrudes, thereby producing the laminate 10. The resin layer 18 can be formed, for example, in the same manner as the adhesive layer 14 described above.

[0068] [Anodizing process] Although a conventionally known method can be used for the anodization treatment, it is preferable to use a self-ordering method or a constant voltage treatment from the viewpoint of increasing the regularity of the micropore arrangement and ensuring the anisotropic conductivity of the structure, which results in, for example, a hexagonal arrangement of pores and conductive paths. Here, the self-ordering method of the anodizing treatment and the constant voltage treatment can be the same as the treatments described in paragraphs

[0056] to

[0108] and in FIG. 8 of JP-A-2008-270158.

[0069] [Holding process] When manufacturing an anisotropically conductive member, a holding step may be included. The holding step is a step of holding the anisotropically conductive member for a total of 5 minutes or more at a voltage of 95% to 105% of a holding voltage selected from a range of 1 V or more and less than 30% of the voltage in the anodizing step after the anodizing step. In other words, the holding step is a step of performing an electrolytic treatment for a total of 5 minutes or more at a voltage of 95% to 105% of a holding voltage selected from a range of 1 V or more and less than 30% of the voltage in the anodizing step after the anodizing step. Here, the "voltage in anodizing treatment" refers to the voltage applied between the aluminum substrate and the counter electrode. For example, if the electrolysis time in anodizing treatment is 30 minutes, the voltage refers to the average voltage maintained during that 30 minutes.

[0070] From the viewpoint of controlling the sidewall thickness of the anodized film, i.e., the thickness of the barrier layer to an appropriate thickness relative to the depth of the pores, the voltage in the holding step is preferably 5% to 25% of the voltage in the anodizing treatment, and more preferably 5% to 20%.

[0071] Furthermore, in order to further improve the in-plane uniformity, the total holding time in the holding step is preferably 5 minutes or more and 20 minutes or less, more preferably 5 minutes or more and 15 minutes or less, and even more preferably 5 minutes or more and 10 minutes or less. The holding time in the holding step may be a total of 5 minutes or more, but is preferably 5 minutes or more continuously.

[0072] Furthermore, the voltage in the holding step may be set by decreasing continuously or stepwise from the voltage in the anodizing treatment step to the voltage in the holding step. However, in order to further improve the in-plane uniformity, it is preferable to set the voltage to 95% or more and 105% or less of the above-mentioned holding voltage within 1 second after the end of the anodizing treatment step.

[0073] The above-mentioned holding step can also be carried out consecutively with the above-mentioned anodizing step, for example by lowering the electrolytic potential at the end of the above-mentioned anodizing step. In the above-mentioned holding step, the same electrolytic solution and treatment conditions as those in the above-mentioned conventionally known anodizing treatment can be adopted, except for the electrolytic potential. In particular, when the holding step and the anodizing step are carried out successively, it is preferable to carry out the treatments using the same electrolyte.

[0074] In the anodized film having a plurality of pores (micropores), as described above, a barrier layer (not shown) exists at the bottom of the pores, and the method includes a barrier layer removal step for removing this barrier layer.

[0075] [Barrier layer removal process] The barrier layer removal step is a step of removing the barrier layer of the anodized film using, for example, an alkaline aqueous solution containing ions of a metal M1 having a higher hydrogen overvoltage than aluminum. By the above-mentioned barrier layer removal step, the barrier layer is removed, and a conductive layer made of metal M1 is formed at the bottom of the pore. Here, hydrogen overvoltage refers to the voltage required to generate hydrogen, and for example, the hydrogen overvoltage of aluminum (Al) is −1.66 V (Journal of the Chemical Society of Japan, 1982, (8), pp. 1305-1313). Examples of metals M1 with hydrogen overvoltages higher than that of aluminum and their hydrogen overvoltage values ​​are shown below. <Metal M1 and hydrogen (1N H 2 SO 4 ) Overvoltage> ·Platinum (Pt): 0.00V ·Gold (Au): 0.02V ·Silver (Ag): 0.08V Nickel (Ni): 0.21V ·Copper (Cu): 0.23V ·Tin (Sn): 0.53V Zinc (Zn): 0.70V

[0076] In the above-mentioned barrier layer removal step, the barrier layer is removed using an alkaline aqueous solution containing ions of metal M1, which has a higher hydrogen overvoltage than aluminum, thereby not only removing the barrier layer 43 but also forming a metal layer 45a of metal M1, which is less likely to generate hydrogen gas than aluminum, on the aluminum substrate 40 exposed at the bottom of the pores 21. As a result, the in-plane uniformity of the metal filling is improved. This is thought to be because the generation of hydrogen gas by the plating solution is suppressed, making it easier to proceed with metal filling by electrolytic plating. In addition, it has been found that the uniformity of metal filling during plating is greatly improved by providing a holding step in the barrier layer removal step, in which a voltage (holding voltage) selected from a range of less than 30% of the voltage in the anodizing step is held for a total of 5 minutes or more, and combining this with the application of an alkaline aqueous solution containing ions of metal M1. For this reason, it is preferable to have a holding step. Although the detailed mechanism is unknown, it is believed that in the barrier layer removal process, an alkaline aqueous solution containing ions of metal M1 is used, which forms a layer of metal M1 at the bottom of the barrier layer, thereby preventing damage to the interface between the aluminum substrate and the anodized film and improving the uniformity of the dissolution of the barrier layer.

[0077] In the barrier layer removal step, metal layer 45a made of a metal (metal M1) is formed at the bottom of pore 21, but the present invention is not limited to this, and only barrier layer 43 is removed to expose aluminum substrate 40 at the bottom of pore 21. In a state where aluminum substrate 40 is exposed, aluminum substrate 40 may be used as an electrode for electrolytic plating.

[0078] The pores 21 can also be formed by widening the diameter of the micropores and removing the barrier layer. In this case, a pore widening process is used to widen the diameter of the micropores. The pore widening process is a process in which the anodized film is dissolved by immersing the anodized film in an acidic or alkaline aqueous solution, thereby widening the pore diameter of the micropores. For the pore widening process, an aqueous solution of an inorganic acid such as sulfuric acid, phosphoric acid, nitric acid, or hydrochloric acid, or a mixture thereof, or an aqueous solution of sodium hydroxide, potassium hydroxide, lithium hydroxide, or the like can be used. The barrier layer at the bottom of the micropores can also be removed by the pore widening treatment. By using an aqueous sodium hydroxide solution in the pore widening treatment, the micropores are enlarged and the barrier layer is removed.

[0079] [Filling process] The filling step is a step of forming a plurality of conductive paths by filling a conductive material into the pores of an anodized film having a plurality of pores extending in the thickness direction, i.e., an insulating base material. The conductive paths are, for example, columnar conductors. When a metal is filled as the conductive material in the filling step, the filling step is called a metal filling step. <Metals used in the filling process> In the filling step, the metal filled as a conductive material into the pores 21 of the anodic oxide film 44 described above in order to form a conductive path has an electrical resistivity of 10 3 It is preferable that the material has a resistivity of Ω·cm or less. Specific examples of the above-mentioned metals include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), zinc (Zn) and cobalt (Co). From the viewpoints of electrical conductivity and formation by a plating method, the conductive material is preferably copper (Cu), gold (Au), aluminum (Al), nickel (Ni) or cobalt (Co), more preferably copper (Cu) or gold (Au), and even more preferably copper (Cu).

[0080] <Plating method> For the anodic oxide film 44 having the multiple pores 21 extending in the thickness direction Dt, the plating method for filling the inside of the pores 21 with metal may be, for example, electrolytic plating or electroless plating. Here, it is difficult to selectively deposit (grow) a metal in a hole with a high aspect ratio using a conventional electrolytic plating method used for coloring, etc. This is thought to be because the deposited metal is consumed in the hole and the plating does not grow even if electrolysis is performed for a certain period of time or more. Therefore, when filling metal by electrolytic plating, it is necessary to provide a rest period during pulse electrolysis or constant potential electrolysis. The rest period must be 10 seconds or more, and is preferably 30 to 60 seconds. It is also preferable to apply ultrasonic waves to promote stirring of the electrolyte.

[0081] Furthermore, the electrolysis voltage is usually 20 V or less, and preferably 10 V or less, but it is preferable to measure the deposition potential of the target metal in the electrolyte solution to be used in advance and perform constant-potential electrolysis at a potential within +1 V. When performing constant-potential electrolysis, it is preferable to use a device that can also be used with cyclic voltammetry, and potentiostat devices such as those manufactured by Solartron, BAS Corporation, Hokuto Denko Corporation, and IVIUM Corporation can be used.

[0082] (Plating solution) As the plating solution, a conventionally known plating solution can be used. Specifically, when copper is precipitated, an aqueous solution of copper sulfate is generally used, and the concentration of the copper sulfate is preferably 1 to 300 g / L, more preferably 100 to 200 g / L. The precipitation can be promoted by adding hydrochloric acid to the electrolytic solution. In this case, the concentration of hydrochloric acid is preferably 10 to 20 g / L. When gold is to be deposited, it is preferable to use a sulfuric acid solution of gold tetrachloride and to perform plating by AC electrolysis.

[0083] The plating solution preferably contains a surfactant. Any known surfactant can be used. Sodium lauryl sulfate, which is known as a surfactant conventionally added to plating solutions, can also be used as is. Both surfactants with ionic (cationic, anionic, zwitterionic) and nonionic (nonionic) hydrophilic moieties can be used, but cationic surfactants are preferred in order to avoid the generation of bubbles on the surface of the object to be plated. The concentration of surfactant in the plating solution composition is preferably 1 mass % or less. In electroless plating, it takes a long time to completely fill the pores having high aspect ratios with metal, so it is preferable to fill the pores with metal by electrolytic plating.

[0084] [Substrate removal process] The substrate removing step is a step of removing the aluminum substrate after the filling step. The method for removing the aluminum substrate is not particularly limited, and a suitable example is a method of removing the aluminum substrate by dissolving it.

[0085] <Dissolving aluminum substrate> The above-mentioned aluminum substrate is preferably dissolved using a treatment liquid that does not easily dissolve an anodized film but easily dissolves aluminum. The dissolution rate of such a treatment solution for aluminum is preferably 1 μm / min or more, more preferably 3 μm / min or more, and even more preferably 5 μm / min or more.Similarly, the dissolution rate of anodized film is preferably 0.1 nm / min or less, more preferably 0.05 nm / min or less, and even more preferably 0.01 nm / min or less. Specifically, the treatment liquid preferably contains at least one metal compound having a lower ionization tendency than aluminum, and has a pH of 4 or less or 8 or more, more preferably a pH of 3 or less or 9 or more, and even more preferably a pH of 2 or less or 10 or more.

[0086] The treatment liquid for dissolving aluminum is preferably based on an acid or alkaline aqueous solution and contains, for example, compounds of manganese, zinc, chromium, iron, cadmium, cobalt, nickel, tin, lead, antimony, bismuth, copper, mercury, silver, palladium, platinum, and gold (e.g., chloroplatinic acid), their fluorides, and their chlorides. Among these, an acid aqueous solution base is preferred, and it is also preferred to blend a chloride. In particular, a treatment solution in which mercury chloride is blended with an aqueous hydrochloric acid solution (hydrochloric acid / mercury chloride) and a treatment solution in which copper chloride is blended with an aqueous hydrochloric acid solution (hydrochloric acid / copper chloride) are preferred from the viewpoint of treatment latitude. The composition of the treatment liquid for dissolving aluminum is not particularly limited, and for example, a bromine / methanol mixture, a bromine / ethanol mixture, aqua regia, etc. can be used.

[0087] The acid or alkali concentration of the treatment liquid for dissolving aluminum is preferably from 0.01 to 10 mol / L, and more preferably from 0.05 to 5 mol / L. Furthermore, the treatment temperature using the treatment liquid that dissolves aluminum is preferably from -10°C to 80°C, and more preferably from 0°C to 60°C.

[0088] The aluminum substrate is dissolved by contacting the aluminum substrate after the plating step with the treatment solution. The contact method is not particularly limited, and examples thereof include an immersion method and a spray method. Among these, the immersion method is preferred. The contact time is preferably 10 seconds to 5 hours, more preferably 1 minute to 3 hours.

[0089] When forming the anisotropically conductive member, for example, a support substrate may be provided on the anodized film 44. The support substrate preferably has the same outer shape as the anodized film 44. By attaching the support substrate, the anodized film 44 becomes easier to handle when forming the anisotropically conductive member.

[0090] [Protrusion process] The protruding step is a step performed after the polishing step in which the conductive paths are caused to protrude from at least one of the one surface and the other surface of the insulating base material. As a specific example, a part of the anodic oxide film 44 is removed. The part of the anodic oxide film 44 is removed by dissolving, for example, the metal constituting the conductive path 22, but by dissolving the anodic oxide film 44, i.e., aluminum oxide (Al 2 O 3 An acidic aqueous solution or an alkaline aqueous solution that dissolves the metal is used. The above-mentioned acidic aqueous solution or alkaline aqueous solution is brought into contact with the anodized film 44 having the pores 21 filled with metal, thereby partially removing the anodized film 44. The method for bringing the above-mentioned acidic aqueous solution or alkaline aqueous solution into contact with the anodized film 44 is not particularly limited, and examples thereof include an immersion method and a spray method. Of these, the immersion method is preferred.

[0091] When using an aqueous acid solution, it is preferable to use an aqueous solution of an inorganic acid such as sulfuric acid, phosphoric acid, nitric acid, or hydrochloric acid, or a mixture thereof. Among them, an aqueous solution not containing chromic acid is preferable from the viewpoint of excellent safety. The concentration of the aqueous acid solution is preferably 1 to 10 mass %. The temperature of the aqueous acid solution is preferably 25 to 60°C. In addition, when an alkaline aqueous solution is used, it is preferable to use an aqueous solution of at least one alkali selected from the group consisting of sodium hydroxide, potassium hydroxide, and lithium hydroxide. The concentration of the alkaline aqueous solution is preferably 0.1 to 5 mass %. The temperature of the alkaline aqueous solution is preferably 20 to 35°C. Specifically, for example, a 50 g / L, 40° C. aqueous phosphoric acid solution, a 0.5 g / L, 30° C. aqueous sodium hydroxide solution, or a 0.5 g / L, 30° C. aqueous potassium hydroxide solution are preferably used.

[0092] The immersion time in the acid or alkali aqueous solution is preferably 8 to 120 minutes, more preferably 10 to 90 minutes, and even more preferably 15 to 60 minutes. Here, the immersion time refers to the total immersion time when short immersion treatments are repeated. Note that a cleaning treatment may be performed between each immersion treatment.

[0093] As described above, the metal 45, i.e., the conductive path 22, is caused to protrude from the front surface 44a or the back surface 44b of the anodized film 44, and it is preferable that the conductive path 22 protrude from the front surface 44a or the back surface 44b of the anodized film 44 by 10 nm to 1000 nm. That is, the protrusion length hb of the protrusion 22a from the front surface 44a and the protrusion length ha of the protrusion 22b from the back surface 44b of the conductive path 22 are each preferably 10 nm to 1000 nm, more preferably 50 nm to 500 nm, in order to improve the bondability with the bonded members.

[0094] When the protrusion lengths ha, hb of the protrusions of the conductive path 22 are to be strictly controlled, it is preferable to fill the inside of the pore 21 with a conductive material such as a metal, process the anodized film 44 and the end of the conductive material such as the metal so as to be flush with each other, and then selectively remove the insulating base material such as the anodized film. After the above-mentioned metal filling or protruding step, a heat treatment can be performed to reduce distortion in the conductive path 22 caused by the metal filling. The heat treatment is preferably carried out in a reducing atmosphere from the viewpoint of suppressing oxidation of the metal, and more specifically, is preferably carried out at an oxygen concentration of 20 Pa or less, and more preferably in a vacuum. Here, vacuum refers to a state of space in which at least one of the gas density and the air pressure is lower than that of the atmosphere. Moreover, the heat treatment is preferably performed while applying stress to the anodic oxide film 44 for the purpose of straightening.

[0095] [Resin layer forming process] In the step of forming the resin layer 18, for example, an inkjet method, a transfer method, a spray method, a screen printing method, or the like is used. The inkjet method is preferable because the resin layer 18 is directly formed on the insulating substrate 20, and therefore the step of forming the resin layer 18 can be simplified. The resin layer 18 can be formed, for example, using a conventionally known surface protection tape attachment device and laminator. In the step of forming the resin layer, a resin layer is formed on the entire surface of the insulating substrate. The resin material constituting the resin layer 18 is as described above.

[0096] In addition to the above-mentioned methods, examples of methods for forming the resin layer 18 include a method in which a resin composition containing an antioxidant material, a polymer material, a solvent (e.g., methyl ethyl ketone, etc.) described below is applied to the entire surface of the insulating substrate, dried, and optionally baked. The method for applying the resin composition is not particularly limited, and any conventionally known coating method can be used, such as gravure coating, reverse coating, die coating, blade coating, roll coating, air knife coating, screen coating, bar coating, and curtain coating. The drying method after coating is not particularly limited, and examples thereof include a heating treatment at a temperature of 0°C to 100°C in the atmosphere for several seconds to several tens of minutes, and a heating treatment at a temperature of 0°C to 80°C under reduced pressure for several tens of minutes to several hours. The method of baking after drying is not particularly limited as it varies depending on the polymer material used. When a polyimide resin is used, for example, a treatment of heating at a temperature of 160°C to 240°C for 2 minutes to 60 minutes can be mentioned, and when an epoxy resin is used, for example, a treatment of heating at a temperature of 30°C to 80°C for 2 minutes to 60 minutes can be mentioned.

[0097] The present invention is basically configured as described above. Although the laminate of the present invention has been described in detail above, the present invention is not limited to the above-mentioned embodiment, and various improvements or modifications may be made without departing from the spirit and scope of the present invention. EXAMPLES

[0098] The features of the present invention will be described in more detail below with reference to examples. The materials, reagents, amounts and ratios of substances, and operations shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the following examples. In this example, laminates of Examples 1 to 10 and laminates of Comparative Examples 1 to 3 were produced. For the laminates of Examples 1 to 10 and the laminates of Comparative Examples 1 to 3, peeling of the diced anisotropically conductive members was evaluated as an index for handling the diced anisotropically conductive members. The evaluation results for peeling of the diced anisotropically conductive members are shown in Table 1 below. Furthermore, bonding of the diced anisotropically conductive members was evaluated. Next, evaluation of peeling of the individualized anisotropically conductive member and evaluation of bonding of the individualized anisotropically conductive member will be described.

[0099] (Peeling of individualized anisotropic conductive materials) The anisotropic conductive member of the prepared laminate was cut into a size of 10 mm x 10 mm. After cutting, the laminate was heated at a temperature of 110°C for 1 minute in the atmosphere to foam the thermal peeling adhesive layer, and the anisotropic conductive member diced into pieces of 10 mm x 10 mm was peeled off. The success rate of peeling off the diced anisotropic conductive member was evaluated according to the following evaluation criteria. Successful peeling of the diced anisotropic conductive material means that the anisotropic conductive material was peeled off from the adhesive layer when the diced anisotropic conductive material was vacuum-adsorbed at -80 kPa (gauge pressure) using the head (10 mm × 10 mm, air intake hole diameter 1 mm) of a flip chip bonding device (FC3000 manufactured by Toray Engineering Co., Ltd.). Evaluation criteria A: 100% success rate of peeling B: The success rate of peeling is 95% or more but less than 100% C: Success rate of peeling is 85% or more but less than 95% D: Success rate of peeling is less than 85%

[0100] The laminate was cut using the cutting device shown below. The cutting device used was a DAD3230 (product name) manufactured by Disco Corporation. The rotation speed was set to 1500 rpm (revolutions per minute) and the feed speed was set to 0.5 mm / sec, and the anisotropic conductive member including the resin substrate with an adhesive layer was cut to a size of 10 mm x 10 mm.

[0101] (Joining of individualized anisotropic conductive materials) The evaluation of the bond will now be described. We prepared a TEG (Test Element Group) chip that can evaluate daisy chains. The TEG chip has 1000 daisy chains. The anisotropic conductive material was laminated with two TEG chips and placed in the chamber of the wafer bonder. -3 After creating a vacuum of 100 Pa, nitrogen gas containing 5% hydrogen was introduced into the chamber and the pressure inside the chamber was stabilized at 5 KPa. After that, the two pieces were pressurized and heated under conditions of a pressure of 20 MPa and a temperature of 200°C, and held for 30 minutes to bond them. The bonding was evaluated according to the following criteria. Evaluation criteria A: Of the 1,000 daisy chain joints, all are connected. B: Of 1,000 daisy chains of joined products, more than 75% but less than 100% are connected. C: Of 1,000 daisy chains of joined products, more than 50% but less than 75% are connected. D: Of 1,000 daisy chains of joined products, more than 25% but less than 50% are connected.

[0102] A method for measuring the average value of the total crack length per unit area of ​​an individualized anisotropically conductive member will be described below. Since the anisotropically conductive member does not transmit infrared rays, cracks in the anisotropically conductive member can be clearly detected by using infrared rays. The infrared microscope used was a semiconductor / FPD inspection microscope MX61 (product name) manufactured by Olympus Corporation. The lens used was an objective lens LMRLN5XIR (product name) for observation in the near infrared region (700 nm to 1300 nm) manufactured by Olympus Corporation. The stage used was an automatic XY stage for upright microscopes manufactured by Merzhäuser.

[0103] An infrared microscope was used to obtain an inspection image of the entire planar view of the semiconductor device, and the obtained inspection image was subjected to a binarization process to obtain a binarized image of the inspection image. The length of the black parts of the binarized image was measured. Cracks were extracted from the black parts using a threshold value of 10 μm. The total length of the extracted cracks was obtained. The area of ​​the binarized image was also calculated from the field of view area. The total crack length per unit area was obtained from the crack length and the area of ​​the binarized image. The average value of the obtained total crack lengths per unit area was then calculated. In addition, in the semiconductor device, an electrode connection region where an electrode is connected and an electrode non-connection region where an electrode is not connected were specified in advance. The average value of the total crack length per unit area in the electrode connection region where an electrode is connected was defined as the electrode crack length, and the average value of the total crack length per unit area in the electrode non-connection region where an electrode is not connected was defined as the non-electrode crack length. In addition, in Examples 1 to 10 and Comparative Examples 1 to 3, those without cracks are marked with "-" in the "Non-electrode portion crack length" and "Electrode portion crack length" columns in Table 1 below.

[0104] Examples 1 to 10 and Comparative Examples 1 to 3 will be described below. Example 1 The laminate of Example 1 will be described. [Structure] <Preparation of aluminum substrate> A molten metal was prepared using an aluminum alloy containing 0.06 mass% Si, 0.30 mass% Fe, 0.005 mass% Cu, 0.001 mass% Mn, 0.001 mass% Mg, 0.001 mass% Zn, 0.001 mass% Ti, and the remainder being Al and unavoidable impurities. The molten metal was treated and filtered, and an ingot 500 mm thick and 1200 mm wide was produced using a DC (Direct Chill) casting method. Next, the surface was scraped off to an average thickness of 10 mm using a facing machine, and then the material was soaked at 550°C for approximately 5 hours. When the temperature had dropped to 400°C, the material was rolled into a 2.7 mm thick plate using a hot rolling machine. Further, the sheet was heat-treated at 500° C. using a continuous annealing machine, and then cold-rolled to a thickness of 1.0 mm to obtain an aluminum substrate of JIS 1050 material. The aluminum substrate was formed into a wafer having a diameter of 200 mm (8 inches), and then subjected to the following treatments.

[0105] <Electrolytic polishing treatment> The above-mentioned aluminum substrate was subjected to electrolytic polishing treatment using an electrolytic polishing solution having the following composition under conditions of a voltage of 25 V, a solution temperature of 65° C., and a solution flow rate of 3.0 m / min. The cathode was a carbon electrode, and the power supply was GP0110-30R (manufactured by Takasago Manufacturing Co., Ltd.) The flow rate of the electrolyte was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).

[0106] (Electrolytic polishing liquid composition) 85% phosphoric acid (Fujifilm Wako Pure Chemical Corporation reagent) 660mL ·Pure water 160mL ·Sulfuric acid 150mL 30mL ethylene glycol

[0107] <Anodizing process> Next, the aluminum substrate after electrolytic polishing was subjected to anodizing treatment by a self-ordering method in accordance with the procedure described in JP-A-2007-204802. The aluminum substrate after electrolytic polishing was subjected to a pre-anodizing treatment for 5 hours in an electrolytic solution of 0.50 mol / L oxalic acid under conditions of a voltage of 40 V, a solution temperature of 16° C., and a solution flow rate of 3.0 m / min. Thereafter, the aluminum substrate after the pre-anodizing treatment was subjected to a coating removal treatment by immersing it in a mixed aqueous solution of 0.2 mol / L chromic anhydride and 0.6 mol / L phosphoric acid (liquid temperature: 50° C.) for 12 hours. Thereafter, the plate was subjected to a re-anodizing treatment for 3 hours and 45 minutes in an electrolyte solution of 0.50 mol / L oxalic acid under conditions of a voltage of 40 V, a liquid temperature of 16°C, and a liquid flow rate of 3.0 m / min, to obtain an anodized film having a thickness of 30 μm. In both pre-anodizing and re-anodizing treatments, the cathode was a stainless steel electrode, and the power source was GP0110-30R (manufactured by Takasago Manufacturing Co., Ltd.). The cooling device was NeoCool BD36 (manufactured by Yamato Scientific Co., Ltd.), and the stirring and heating device was Pair Stirrer PS-100 (manufactured by EYELA Tokyo Rikakikai Co., Ltd.). Furthermore, the flow rate of the electrolyte was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).

[0108] <Barrier layer removal process> Next, using the same treatment solution and treatment conditions as those for the above-mentioned anodizing treatment, electrolysis (electrolytic removal treatment) was performed while continuously decreasing the voltage from 40 V to 0 V at a voltage decrease rate of 0.2 V / sec. Thereafter, an etching treatment (etching removal treatment) was performed by immersing the sample in 5 mass % phosphoric acid at 30°C for 30 minutes to remove the barrier layer at the bottom of the micropores of the anodized film, exposing the aluminum through the micropores.

[0109] Here, the average opening diameter of the micropores present in the anodized film after the barrier layer removal process was 60 nm. The average opening diameter was measured by taking a surface image at a magnification of 50,000 times using a field emission scanning electron microscope (FE-SEM), selecting 50 micropores from the surface image, and measuring the diameter of the opening of each of the 50 selected micropores. The average value of the diameters of the openings of the measured micropores was calculated. This average value was taken as the average opening diameter. The average thickness of the anodized film after the barrier layer removal process was 80 μm. The average thickness was measured by cutting the anodized film in the thickness direction using a focused ion beam (FIB), and then taking a cross-sectional image of the cross-section at a magnification of 50,000 times using a field emission scanning electron microscope (FE-SEM). In the cross-sectional image, the length of 10 points corresponding to the thickness of the anodized film was measured, and the average length of the 10 measured points was calculated. This average value was determined as the average thickness of the anodized film after the barrier layer removal process. The density of the micropores in the anodic oxide film is approximately 100 million / mm 2The micropore density was measured and calculated by the method described in paragraphs

[0168] and

[0169] of JP2008-270158A. The degree of ordering of the micropores in the anodic oxide film was 92%. The degree of ordering was measured and calculated by taking a surface image at a magnification of 20,000 times using a field emission scanning electron microscope (FE-SEM) and measuring it using the method described in paragraphs

[0024] to

[0027] of JP2008-270158A.

[0110] <Metal filling process> Next, electrolytic plating was carried out by using the aluminum substrate as the cathode and platinum as the anode. Specifically, a copper plating solution having the composition shown below was used and constant current electrolysis was performed to produce a metal-filled microstructure in which copper was filled into the inside of the pores (micropores) to form conductive paths. Here, constant current electrolysis was performed using a plating device manufactured by Yamamoto Plating Tester Co., Ltd. and a power supply (HZ-3000) manufactured by Hokuto Denko Corporation. After cyclic voltammetry was performed in the plating solution to confirm the deposition potential, the treatment was performed under the conditions shown below. (Copper plating solution composition and conditions) ·Copper sulfate 100g / L ·Sulfuric acid 50g / L Hydrochloric acid 15g / L ·Temperature 25℃ ·Current density 10A / dm 2

[0111] <Polishing process> Next, the surface of the anodized film of the metal-filled microstructure in which the conductive paths were formed by filling the metal was subjected to CMP treatment and polished 5 μm from the surface to smooth the surface. As the CMP slurry, PNANERLITE-7000 manufactured by Fujimi Inc. was used. The surface of the anodized film after filling the pores (micropores) with metal was observed with a field emission scanning electron microscope (FE-SEM) to determine whether 1,000 micropores were sealed with metal. The sealing rate (number of sealed micropores / 1,000) was calculated to be 96%. In addition, after filling the pores (micropores) with metal, the anodized film was cut in the thickness direction using an FIB, and cross-sectional images were taken of the cross-section at a magnification of 50,000 times using a field emission scanning electron microscope (FE-SEM).When the inside of the pores (micropores) was examined, it was found that the inside of the sealed pores (micropores) was completely filled with metal.

[0112] <Trimming process> The metal-filled microstructure after the polishing process was immersed in an aqueous sodium hydroxide solution (concentration: 5% by mass, liquid temperature: 20°C) and the immersion time was adjusted so that the height of the protrusions was 500 nm, thereby selectively dissolving the surface of the aluminum anodized film. The structure was then washed with water and dried to leave protruding copper cylinders as conductive paths.

[0113] <Substrate removal process> Next, the aluminum substrate was dissolved and removed by immersing it in a 20% by mass aqueous solution of mercury chloride (mercuric chloride) at 20° C. for 3 hours to prepare a structure.

[0114] <Resin substrate formation process> Next, a thermally peelable resin substrate with an adhesive layer (REVALPHA 3195MS, manufactured by Nitto Denko Corporation) was attached to a silicon wafer with a diameter of 200 mm (8 inches), and the metal-filled microstructure was attached on top of the resin substrate. At this time, the large diameter side of the structure, which had a larger diameter of the conductive path, was attached to the adhesive layer.

[0115] <Polishing process> Next, the surface of the structure where the conductive paths have a smaller diameter, i.e., the back surface of the anodized film, was subjected to CMP to smooth the metal-filled microstructure. PNANERLITE-7000 manufactured by Fujimi Inc. was used as the CMP slurry. At that time, the polishing amount was adjusted so that the ratio of small diameter to large diameter was 0.98. The polishing amount was adjusted by changing the polishing time.

[0116] <Trimming process> After the substrate removal process, the structure was immersed in an aqueous sodium hydroxide solution (concentration: 5% by mass, liquid temperature: 20°C) and the immersion time was adjusted so that the height of the protrusions would be 500 nm, thereby selectively dissolving the surface of the anodized aluminum film. The structure was then washed with water and dried to leave protruding copper cylinders as conductive paths.

[0117] <Adhesive layer formation process> A resin layer was formed on the structure after the trimming process by the method described below to prepare a laminate. <Resin layer> LTC9320 (manufactured by FUJIFILM Electronic Materials Co., Ltd.) was used as a commercially available polyamic acid ester solution (containing dimethylsulfoxide, trialkoxyamidocarboxysilane, and oxime derivatives) using gamma-butyrolactone as a solvent. This solution was applied to the surface of the insulating substrate with the protruding conductive paths, dried to form a film, and then the imidization reaction was carried out in a nitrogen-substituted reactor (oxygen concentration 10 ppm or less) at 200°C for 3 hours to form an adhesive layer made of a polyimide resin layer with a thickness of 500 nm. The thickness of the resin layer was adjusted by adding a solvent (MEK (methyl ethyl ketone)).

[0118] Example 2 Example 2 differs from Example 1 in that the ratio of small diameter to large diameter is 0.95. Other than that, Example 2 was the same as Example 1. In Example 2, compared to Example 1, the amount of polishing of the front surface of the anodized film was reduced and the amount of polishing of the back surface of the anodized film was increased, the thickness of the anodized film was made equivalent to that of Example 1, and the small diameter / large diameter value was set to 0.95. Example 3 Example 3 is different from Example 1 in that the ratio of small diameter to large diameter is 0.9. Other than that, Example 3 was the same as Example 1. In Example 3, compared to Example 1, the amount of polishing of the front surface of the anodized film was reduced and the amount of polishing of the back surface of the anodized film was increased, the thickness of the anodized film was made equivalent to that of Example 1, and the small diameter / large diameter value was set to 0.9. Example 4 Example 4 differs from Example 1 in that the ratio of small diameter to large diameter is 0.85. Other than that, Example 4 was the same as Example 1. In Example 4, compared to Example 1, the amount of polishing of the front surface of the anodized film was reduced and the amount of polishing of the back surface of the anodized film was increased, the thickness of the anodized film was made equivalent to that of Example 1, and the small diameter / large diameter value was set to 0.85. Example 5 Example 5 is different from Example 1 in that the ratio of small diameter to large diameter is 0.6. Other than that, it was the same as Example 1. In Example 5, compared to Example 1, the amount of polishing of the front surface of the anodized film was reduced and the amount of polishing of the back surface of the anodized film was increased, the thickness of the anodized film was made equivalent to that of Example 1, and the small diameter / large diameter ratio was set to 0.6. Example 6 Example 6 is different from Example 1 in that the ratio of small diameter to large diameter is 0.5. Other than that, Example 6 was the same as Example 1. In Example 6, compared to Example 1, the amount of polishing of the front surface of the anodized film was reduced and the amount of polishing of the back surface of the anodized film was increased, the thickness of the anodized film was made equivalent to that of Example 1, and the small diameter / large diameter value was set to 0.5.

[0119] Example 7 Example 7 is different from Example 1 in that the value of small diameter / large diameter is 0.2. Other than that, it was the same as Example 1. In Example 7, compared to Example 1, the amount of polishing of the front surface of the anodized film was reduced and the amount of polishing of the back surface of the anodized film was increased, the thickness of the anodized film was made equivalent to that of Example 1, and the small diameter / large diameter value was set to 0.2. Example 8 Example 8 is different from Example 1 in that the value of small diameter / large diameter is 0.1. Other than that, it was the same as Example 1. In Example 8, compared to Example 1, the amount of polishing of the front surface of the anodized film was reduced and the amount of polishing of the back surface of the anodized film was increased, the thickness of the anodized film was made equivalent to that of Example 1, and the small diameter / large diameter value was set to 0.1. Example 9 In Example 9, the non-electrode crack length was 1 (μm / mm 2 ) and the electrode crack length is 1 (μm / mm 2 ) The rest was the same as in Example 4. Example 10 In Example 10, the non-electrode crack length was 5 (μm / mm 2 ) and the electrode crack length is 1 (μm / mm 2 ) The rest was the same as in Example 4.

[0120] Comparative Example 1 Comparative Example 1 differs from Example 1 in that the ratio of small diameter to large diameter is 1.0. In Comparative Example 1, compared to Example 1, the amount of polishing of the front surface of the anodized film was increased and the amount of polishing of the back surface of the anodized film was decreased, the thickness of the anodized film was made equivalent to that of Example 1, and the small diameter / large diameter value was set to 1.0. Comparative Example 2 In Comparative Example 2, the non-electrode crack length was 1 (μm / mm 2 ) and the electrode crack length is 1 (μm / mm 2 ) The rest was the same as in Comparative Example 1. Comparative Example 3 In Comparative Example 3, the non-electrode crack length was 5 (μm / mm 2 ) and the electrode crack length is 1 (μm / mm 2 ) The rest was the same as in Comparative Example 1.

[0121] [Table 1]

[0122] As shown in Table 1, in Examples 1 to 10, the individualized anisotropically conductive members were easier to remove and had a higher success rate of peeling than in Comparative Examples 1 to 3, and further, good results were obtained with respect to bonding. In Comparative Examples 1 to 3, the small diameter / large diameter ratio was 1.0, i.e., the diameter of the conductive path was uniform and no warping occurred in the individualized anisotropic conductive members, so many of them were difficult to remove and could not be peeled off. From Examples 1 to 10, when the ratio of small diameter / large diameter is in the range of 0.1 to 0.95, removal becomes easier and the success rate of peeling becomes higher, which is preferable. When the ratio of small diameter / large diameter is in the range of 0.1 to 0.85, removal becomes easier and the success rate of peeling becomes higher, which is more preferable. When the ratio of small diameter / large diameter is more than 0.5 and 0.85 or less, not only was the success rate of peeling high, but the quality of the anisotropically conductive member after the individualized anisotropically conductive member was taken out was good. Furthermore, from Examples 4, 9 and 10, it was found that even when cracks were present, the success rate of peeling was high, but the bonding was better when there were no cracks. [Explanation of symbols]

[0123] 10, 11 Laminate 12 Support 12a, 14a, 20a, 40a, 44a surface 14 Adhesive layer 16, 16a, 17 Anisotropic conductive material 18 Resin layer 20 Insulating substrate 20b, 44b back side 21 Pore 22 Conduction Path 22a, 22b protrusion 22c side 23 Crack 30 metal layer 32 Joining materials 40 Aluminum substrate 42c bottom 42d side 43 Barrier Layer 44 Anodic oxide film 45, 45b metal 45a metal layer Da, Db diameter Ds Stacking direction Dt Thickness direction hj, hm average thickness ht Thickness p Center distance x direction w Interval

Claims

1. A laminate in which a support, an adhesive layer, and an anisotropic conductive member are laminated in this order, The anisotropic conductive member has an insulating base material having electrical insulation properties, and a plurality of conductive paths penetrating the insulating base material in a thickness direction and provided in a state in which the conductive paths are electrically insulated from each other, the insulating substrate is an anodized film of a valve metal, the plurality of conductive paths are each made of a conductive material, and a diameter of one surface of the insulating base in the thickness direction is different from a diameter of the other surface of the insulating base in the thickness direction; a ratio of a small diameter to a large diameter of the diameters on the one surface and the other surface of the conductive path, that is, a small diameter / large diameter value, is R, and 0.5≦R≦0.85 is satisfied; The anisotropically conductive member is laminated such that the surface having the larger diameter out of the diameter of the one surface of the conductive path and the diameter of the other surface of the conductive path faces the adhesive layer.

2. The laminate according to claim 1 , wherein the adhesive strength of the adhesive layer decreases in a specific temperature range or decreases when exposed to ultraviolet light.

3. The laminate according to claim 2 , wherein the adhesive strength of the adhesive layer decreases at a temperature of 110° C. or higher.

4. The density of the conductive paths on the one surface and the other surface of the insulating base material is 1×10 6 ~1×10 10 / mm 2 2. The laminate according to claim 1, wherein the diameter of the one surface and the diameter of the other surface of the conductive path are 10 nm or more and 500 nm or less.

5. The laminate according to claim 1 or 2, wherein the insulating base material has a thickness of 10 μm or more and 30 μm or less.

6. The laminate according to claim 1 or 2, wherein the support is a bonding member having a metal layer, and the metal layer is exposed from the adhesive layer.

7. The laminate according to claim 1 , wherein the anisotropically conductive member has a crack in the insulating substrate.

8. The laminate according to claim 1 , wherein the conductive path has a protruding portion protruding from at least one of the surfaces of the insulating base material that are opposed to each other in the thickness direction.

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