Metal member for manufacturing a vapor chamber, method for manufacturing the same, and method for manufacturing a vapor chamber

Abstract

To provide a manufacturing method for a vapor chamber capable of providing a wick on a wall surface of a sealed space of the vapor chamber more simply than conventional arts.SOLUTION: A metal member for manufacturing a vapor chamber is used to form at least a first member when manufacturing a vapor chamber that forms a sealed space in which working fluid is sealed using the first member made of metal and a second member. The metal member for manufacturing a vapor chamber comprises, in order from the side that forms the sealed space, a first metal layer 5, an etching protection layer 6 partially formed by hardening a photoresist that uses 10% by weight to 90% by weight of a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer relative to an amount of a reactive diluent and that contains carbon that provides electrical conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite, and a second metal layer 7 formed by plating.SELECTED DRAWING: Figure 2A

Description

Technical Field

[0001] The present invention relates to a metal member for manufacturing a vapor chamber, a method for manufacturing the same, and a method for manufacturing a vapor chamber, which are used when manufacturing a vapor chamber made of metal that forms a sealed space in which a working fluid is enclosed.

Background Art

[0002] In recent years, the miniaturization and high performance of electronic devices have been accelerating. Along with the improvement in performance, the amount of heat generated from semiconductor elements and integrated circuits has also increased, and an efficient cooling method for this amount of heat has become an issue in promoting further miniaturization and high performance of electronic devices.

[0003] As a heat dissipation method for semiconductors, there is a method of using a high thermal conductivity paste or solder as a die bonding material on the back surface of the semiconductor to conduct heat to a cold plate. There is also a method of forming thermal vias on the active surface of the semiconductor and leading heat to a heat conductor by soldering via an electronic circuit board. In mobile devices typified by smartphones, there is a limit to the mounting thickness, and currently, a graphite sheet may be used.

[0004] In order to improve the heat dissipation capacity, the introduction of a vapor chamber, which is a flat heat dissipation device using the principle of a heat pipe, has also been considered. However, in smartphones, since the thickness of the case is restricted, the thickness of the vapor chamber is required to be 0.3 mm or less and has not been realized (Non-Patent Document 1).

[0005] The vapor chamber is a planar heat dissipation device using the principle of a heat pipe and is a heat spreader for dissipating heat. Inside the vapor chamber is a sealed space under reduced pressure, in which a working fluid for transferring heat is enclosed. When the working fluid is heated by a heat source, the working fluid absorbs latent heat and evaporates. The vapor diffuses into the sealed space and is cooled when it reaches the upper inner wall surface in contact with the heat sink, releasing the latent heat and returning to a liquid state. Inside the inner wall of the vapor chamber or in the sealed space, a structure called a wick that generates capillary force is arranged, and the working fluid that has returned to a liquid state moves by capillary action. The wick is shaped to guide the working fluid in the direction of the heat source, and a cycle in which the working fluid absorbs heat again and evaporates is repeated. As a result, the heat generated from a small heat source can be diffused over a wide area.

[0006] Since the vapor chamber dissipates heat by circulating the working fluid, the structural design of the wick greatly affects the performance of the vapor chamber. The prior art related to vapor chambers includes the following. For example, Patent Document 1 describes a vapor chamber in which a plurality of intermediate plates are laminated and arranged in a sealed space to form a capillary flow path. Each intermediate plate is provided with fine holes as flow paths, and the working fluid has a structure in which it is guided to the heat source by capillary action.

[0007] Patent Document 2 describes a vapor chamber provided with protrusions above and below in a sealed space. By digging up a metal plate and providing standing plate-shaped fins at predetermined intervals, it is possible to form a wick integrated with the container.

[0008] Patent Document 3 describes a vapor chamber in which a wick is formed by injecting molten copper powder into an aluminum casing. Since the wick of the vapor chamber is formed by thermal spraying, it has the feature that it does not need to go through the process of forming a fine structure compared with the above-mentioned ones.

[0009] Patent Document 4 creates a sealed space for circulating a working fluid and then produces a wick coated with metal by metal plating.

[0010] Patent Document 5 describes forming a sealed space for circulating a working fluid by etching or press working. Patent Document 6 also proposes forming a sealed space by etching and further providing fine recesses on the wall surface of the sealed space by etching.

[0011] Patent Document 7 discloses a method of forming a wick by providing an etching stop layer partially under a metal layer to be etched and etching a part of the metal layer thereunder.

Prior Art Documents

Patent Documents

[0012]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Patent Document 7

[0013]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0014] Due to the high functionality and miniaturization of semiconductors, heat generation of semiconductor chips has become a problem, and a more efficient heat dissipation method is required. As described above, a method of releasing heat from the back surface of a semiconductor is mainly used. A method of connecting to a heat conductor or a heat sink through a bonding material such as heat dissipation grease, silver paste, or solder on the back surface of the semiconductor is frequently used. However, in the above method, the thermal resistance increases due to the distance from the element to the heat sink and the thermal conductivity of the bonding material. A more efficient heat dissipation mechanism is required.

[0015] A vapor chamber utilizing the principle of a heat pipe is suitable for cooling a semiconductor. In order to use a vapor chamber in a thin mobile device such as a mobile phone, a thinner vapor chamber is required. The cooling capacity of a vapor chamber depends on a wick having a shape that facilitates the movement of the working fluid. A wick that facilitates the movement of the working fluid by capillary action must be formed.

[0016] In order to obtain a thin vapor chamber, it is an effective method to provide a recess for forming a sealed space by etching a metal member, and the wick is also formed by etching. In Patent Document 6, a groove is formed by first half etching, and the formed groove is further half etched to form a wick. It is difficult to control a uniform etching depth by half etching.

[0017] In Patent Document 7, a method of providing a wick by providing an etching stop layer having an opening between a first metal layer and a second metal layer, removing the first metal layer by etching, and etching a part of the second metal layer in contact with the opening of the etching stop layer is disclosed. However, the method of providing an etching stop layer having an opening is complicated.

[0018] As described above, etching is performed from one surface of a metal member to provide a concave portion that forms a sealed space in the metal member, and a method for manufacturing a vapor chamber that can easily provide a wick on the wall surface of the concave portion as compared with the prior art has been sought.

Means for Solving the Problems

[0019] The metal member for manufacturing a vapor chamber according to the present invention is a metal member for manufacturing a vapor chamber that includes a first member made of metal and a second member made of metal that forms a sealed space in which a working fluid is enclosed, and is used to form at least the first member. The metal member for manufacturing a vapor chamber includes, from the side forming the sealed space, a first metal layer, a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer used in an amount of 10% to 90% by weight with respect to the amount of the reactive diluent, and a photoresist to which carbon that imparts conductivity and is any one or more of carbon fine powder, carbon fiber, and graphite is added is cured to form a partially formed etching protection layer. Without making the etching protection layer conductive, directly on the first metal layer and the partially formed etching protection layer It is characterized by sequentially including a second metal layer formed by plating.

[0020] Further, in the metal member for manufacturing a vapor chamber according to the present invention, it is preferable to provide an etching stop layer outside the second metal layer.

[0021] Further, in the metal member for manufacturing a vapor chamber according to the present invention, the addition amount of the carbon is preferably 1 part by weight or more and 80 parts by weight or less with respect to the amount of components other than carbon in the etching protection layer.

[0022] Further, in the metal member for manufacturing a vapor chamber according to the present invention, it is preferable that the partially formed etching protection layer is continuously formed.

[0023] Further, in the metal member for manufacturing a vapor chamber according to the present invention, it is preferable that the etching protective layer formed partially is formed in isolation.

[0024] The manufacturing method of the metal member for manufacturing a vapor chamber according to the present invention is a manufacturing method of a metal member for manufacturing a vapor chamber used for forming at least the first member when manufacturing a vapor chamber including a first member made of metal and a second member made of metal that forms a sealed space in which the first member and a working fluid are enclosed. The method includes using a metal plate as the first metal layer, using a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer in an amount of 10% to 90% by weight with respect to the amount of a reactive diluent inside a region for forming the sealed space on one surface of the first metal layer, and curing a photoresist added with carbon that imparts conductivity and is one or more of carbon fine powder, carbon fiber, and graphite, thereby forming an etching protective layer partially. Without making the etching protection layer conductive, on the first metal layer and the partially formed A second metal layer is provided on the surface on the side of the etching protective layer. directly It is characterized by being provided by plating.

[0025] Further, in the manufacturing method of the metal member for manufacturing a vapor chamber according to the present invention, it is preferable to provide an etching stop layer outside the second metal layer.

[0026] Further, in the manufacturing method of the metal member for manufacturing a vapor chamber according to the present invention, a photoresist added with carbon that imparts conductivity and is one or more of carbon fine powder, carbon fiber, and graphite is used in an amount of 10% to 90% by weight with respect to the amount of a reactive diluent inside a region for forming the sealed space of the first metal layer, the photoresist is applied, the photoresist at a predetermined location is cured, and the uncured photoresist is removed, thereby forming the etching protective layer, which is preferable.

[0027] Further, in the method for manufacturing a metal member for manufacturing a vapor chamber according to the present invention, it is preferable to form the etching protection layer by applying ink by silk screen, inkjet or dispenser to a predetermined location inside the region forming the sealed space of the first metal layer and curing the ink.

[0029] Further, in the method for manufacturing a metal member for manufacturing a vapor chamber according to the present invention, it is preferable to continuously form the etching protection layer.

[0030] Further, in the method for manufacturing a metal member for manufacturing a vapor chamber according to the present invention, it is preferable to form the etching protection layer in isolation.

[0031] The method for manufacturing a vapor chamber according to the present invention is a method for manufacturing a vapor chamber including a first member made of metal and a second member made of metal that forms a sealed space in which the first member and a working fluid are enclosed. The method includes forming, from the side forming the sealed space, an etching protection layer that is partially formed by curing a photoresist using 10% to 90% by weight of a first metal layer, a hydrophilic acrylic monomer, or a hydrophilic methacrylic monomer with respect to the amount of a reactive diluent and adding carbon that imparts conductivity, which is any one or more of carbon fine powder, carbon fiber, and graphite. Without making the etching protection layer conductive, directly on the first metal layer and the partially formed etching protection layer An outer frame etching protection layer is formed outside the region forming the sealed space of the first metal layer of the metal member for manufacturing a vapor chamber, which sequentially includes a second metal layer formed by plating. The first metal layer side inside the outer frame etching protection layer is etched, and all of the first metal layer and a part of the second metal layer that is not covered by the partially formed etching protection layer are removed. The outer frame etching protection layer and the partially formed etching protection layer are removed. A member having a recess formed on one side is used as the first member, and the recess of the first member is sealed by the second member to form the sealed space.

[0032] Further, in the method for manufacturing a vapor chamber according to the present invention, it is preferable to provide an etching stop layer outside the second metal layer of the metal member for manufacturing the vapor chamber, and remove all of the second metal layer that is not covered by the etching protection layer that is partially formed by the etching.

Advantages of the Invention

[0033] According to the present invention, a thin vapor chamber with good cooling efficiency can be provided. Further, the manufacturing process of the vapor chamber of the present invention can be simplified.

Brief Description of the Drawings

[0034]

Figure 1A

Figure 1B

Figure 2A

Figure 2B

Figure 2C

Figure 2D

Figure 2E

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12A

Figure 12B

Figure 13A

Figure 13B

Figure 14

Figure 15

Embodiments for Carrying Out the Invention

[0035] FIG. 1 shows a cross section of the vapor chamber 1 according to an embodiment of the present invention. The vapor chamber 1 includes a first member 2 made of metal and a second member 3 made of metal that forms a sealed space 4 in which the first member 2 and the working fluid are enclosed. The sealed space 4 is formed by sealing a recess formed in the first member 2 with the second member 3. The working fluid is enclosed in the sealed space 4. The first member 2 is sealed by adhering the second member 3 around the periphery of the recess formed in the first member 2.

[0036] A device such as a semiconductor, which is an object to be cooled, is brought into contact with and connected to the lower surface 2a of the first member 2 constituting the vapor chamber 1. Depending on the form and usage state of the mobile device constituted by the device, instead of the first member 2, the device may be brought into contact with and connected to the second member 3. The working fluid enclosed in the sealed space 4 vaporizes from a liquid to a gas due to the heat of the device that is the object to be cooled. The device is cooled by the latent heat of vaporization of the working fluid. The vaporized working fluid moves to the side in the sealed space 4 that does not contact the device. The working fluid that has moved to the sealed space 4 that does not contact the device is cooled and becomes a liquid. The liquid working fluid moves to the device side through a flow path formed on the inner surface of the recess that forms the sealed space 4 of the first member 2 and vaporizes due to the heat of the device. The wick formed on the inner surface of the recess of the first member 2 serves as the flow path. By repeating the vaporization and liquefaction of the working fluid, the cooling capacity of the vapor chamber 1 is exhibited.

[0037] The vapor chamber 1 includes a vaporization section that contacts the device to cool the device, and a liquefaction section that cools and liquefies the vaporized working fluid without contact. The shape is not particularly limited, and the shape can be designed by the heat source in the electronic device and the heat conduction path, and the flow path width of the working fluid can also be arbitrarily designed according to practical use. The contact surface of the vapor chamber 1 with the device, which is the heat source, preferably has a large contact area. The vapor chamber 1 needs to include a vaporization section and a liquefaction section, and the size of the vapor chamber 1 changes according to the size of the device to be cooled. For example, the vapor chamber 1 preferably has a width of 1 mm or more and a length of 3 mm or more, and a width of less than 100 mm and a length of less than 300 mm. If the width is less than 1 mm and the length is less than 3 mm, a sufficient sealed space 4 of the vapor chamber 1 cannot be ensured and the cooling effect is insufficient. When the width is 100 mm or more and the length is 300 mm or more, the movement of the working fluid is not carried out quickly and the cooling effect is insufficient. The vapor chamber 1 includes at least one sealed space 4, but may have more than one. Each sealed space 4 includes a vaporization section and a liquefaction section.

[0038] The planar shape of the sealed space 4 of the vapor chamber 1 is formed by a straight line or a curve, and the curve may be a spiral or a radial shape. When it is desired to radiate heat uniformly in all directions from the heat source, it is preferable to form the sealed space 4 in a spiral or a radial shape.

[0039] In FIG. 1A, a recess is formed in the first member 2 constituting the vapor chamber 1, but a recess may also be formed in the second member 3 as shown in FIG. 1B.

[0040] The working fluid is preferably a liquid having a boiling point of 50°C or higher and 120°C or lower, such as water, methanol, ethanol, isopropanol, acetone, etc. In particular, water is preferable because it is hygienically safe. Water is pure water such as ion-exchanged water, RO water, distilled water, etc.

[0041] A metal member for manufacturing a vapor chamber used for manufacturing a first member 2, a method for manufacturing the same, and a method for manufacturing a vapor chamber using the metal member for manufacturing a vapor chamber will be described below.

[0042] (Embodiment 1) The cross-section of the metal member for manufacturing a vapor chamber according to Embodiment 1 is shown in Fig. 2A. The metal member for manufacturing a vapor chamber according to Embodiment 1 includes a first metal layer 5, an etching protection layer 6 partially formed on one side of the first metal layer 5, and a second metal layer 7 in contact with the first metal layer 5 and the partially formed etching protection layer 6. The planar size of the metal member for manufacturing a vapor chamber must be equal to or larger than the size of the vapor chamber 1. The outer shape may be a rectangle formed from straight lines or may include curves. When manufacturing a plurality of vapor chambers 1 from one metal member for manufacturing a vapor chamber, the metal member for manufacturing a vapor chamber shall have a size corresponding thereto.

[0043] For the first metal layer 5, at the temperature at which the vapor chamber 1 is used, a metal with a thermal conductivity of 10 W / square meter·K or more can be used. Metals such as copper, copper molybdenum alloy, and aluminum, which can be easily etched by chemically corroding and removing a part, are preferable as the metal constituting the first metal layer 5. The thickness of the first metal layer 5 is preferably 9 μm or more and 10,000 μm or less. If it is less than 9 μm, the etching process time is short and control is difficult. If it exceeds 10,000 μm, the formed vapor chamber 1 becomes thick. Considering workability, 50 μm to 500 μm is preferable. The first metal layer 5 is a metal such as copper, copper molybdenum alloy, or aluminum, and a plate with a thickness of 9 μm or more and 10,000 μm or less can be used. In particular, the first metal layer 5 is preferably copper from the viewpoints of workability such as plating and etching and thermal conductivity. Copper is easy to etch and has high thermal conductivity.

[0044] The etching protection layer 6 that is partially formed on one side of the first metal layer 5 can be any as long as it can protect the second metal layer 7 from being etched when the first metal layer 5 is etched. The thickness of the etching protection layer 6 is preferably 0.1 μm or more and 30 μm or less. If it is less than 0.1 μm, pinholes are likely to occur in the etching protection layer 6, and there is a risk of dissolution or peeling in the etching solution used in the etching process. If it exceeds 30 μm, when the second metal layer 7 is formed by plating, unevenness will be formed on the opposite side of the first metal layer 5 of the second metal layer 7, the smoothness cannot be maintained, the adhesion between the vapor chamber 1 and the device to be cooled will deteriorate, and the cooling effect will decrease.

[0045] The plan views of the etching protection layer 6 that is partially formed are shown in FIGS. 2B and 2C. The shape is not particularly limited, but FIGS. 2B and 2C show the case where the metal member for manufacturing the vapor chamber is rectangular. In FIG. 2B, the etching protection layer 6 that is partially formed is formed like a strip in the long side direction of the rectangle. The space between the strips that are the etching protection layer 6 becomes a flow path through which the liquefied working fluid moves by capillary action when the vapor chamber 1 is formed. Therefore, the interval between the strips becomes the width of the flow path through which the liquefied working fluid can move by capillary action. The etching protection layer 6 is provided at a location that constitutes the vaporization part and the liquefaction part of the vapor chamber 1 to be manufactured when this metal member for manufacturing the vapor chamber is used in the manufacture of the vapor chamber 1. The strips are shown as straight lines, but they can also be curves. Also, the widths of the plurality of strip-shaped etching protection layers 6 may be different. Furthermore, the width may increase or decrease in the length direction. In this case, the etching protection layer 6 is continuously provided from one end of the metal member for manufacturing the vapor chamber to the opposite end.

[0046] FIG. 2C shows a case where the etching protection layer 6 is provided in isolation from one end of the metal member for manufacturing the vapor chamber to the opposite end. As shown in FIG. 2C, when the etching protection layer 6 is circular, the diameter of the circle is preferably 3 μm or more and 300 μm or less. The diameters of the circular etching protection layers 6 may be different. It may not be circular, and may have any shape such as a square, a rectangle, an ellipse, etc. Also, the sizes and shapes of the isolated etching protection layers 6 may be different. The distance between the centers of the isolated etching protection layers 6 is preferably 3.5 μm or more and 300 μm or less. When the diameter of the circle is less than 3 μm and the center distance is less than 3.5 μm, it is difficult to form the etching protection layer 6. In FIG. 2C, the partially formed etching protection layer 6 is provided in isolation from one end of the metal member for manufacturing the vapor chamber to the opposite end. When the vapor chamber 1 is formed, the portion other than the isolated etching protection layer 6 becomes a flow path through which the liquefied working fluid moves by capillary action. Therefore, the interval other than the location where the etching protection layer 6 is provided becomes the width of the flow path through which the liquefied working fluid can move by capillary action.

[0047] FIG. 2A shows a cross-section of the metal member for manufacturing the vapor chamber according to Embodiment 1, and shows a cross-sectional view taken along line A-A of FIG. 2B and a cross-sectional view taken along line B-B of FIG. 2C.

[0048] FIG. 2D shows a case where no resist is provided in isolation on the etching protection layer 6 provided continuously from one end of the metal member for manufacturing the vapor chamber to the opposite end. The shape where no resist is provided in isolation may not be circular as shown in FIG. 2D, and may have any shape such as a square, a rectangle, an ellipse, etc. Also, the sizes of the shapes where no resist is provided in isolation may be different. The area of the shape where no resist is provided in isolation is preferably 1 square micrometer or more and 90,000 square micrometers or less. When it is less than 1 square micrometer, it is difficult to form the resist, and it is also difficult for the etching liquid used in the etching process to contact the metal layer 7.

[0049] As shown in FIG. 5, the formation of the etching protection layer 6 is carried out by applying a photoresist layer 9 on one side of the first metal layer 5 which is a metal plate, irradiating UV to the portion of the applied photoresist layer 9 corresponding to the etching protection layer 6 to be partially formed, curing the photoresist layer 9 irradiated with UV, and performing development to dissolve and remove the uncured photoresist layer 9 with a developer. When irradiating UV, mask the portions other than the photoresist layer 9 to be cured and do not irradiate UV. Instead of applying the photoresist, a photosensitive dry film may be attached.

[0050] The photoresist includes a base polymer which is a (meth)acrylate compound, a photopolymerizable monomer, a reactive diluent which is a dimer and an oligomer, a photoinitiator, and a polymerization accelerator. Optionally, it includes fillers such as silica, barium sulfate and talc, a coloring pigment, an antifoaming leveling agent, a polymerization inhibitor, an organic solvent, an epoxy curing agent, etc. It is preferable to blend the base polymer at 60% by weight or less, the reactive diluent at 5% by weight or more, and the photoinitiator at 1% by weight or more and 10% by weight or less.

[0051] For example, acrylic acid is added to the epoxy group of a novolak type epoxy resin to synthesize an epoxy acrylate having a photocrosslinkable group as the base polymer, and then an acid anhydride such as tetrahydrophthalic anhydride is reacted with the hydroxyl group generated in the first-stage reaction to obtain an alkali aqueous solution-soluble resin having a carboxyl group in the side chain. This carboxyl group-containing novolak type epoxy acrylate becomes the base polymer of a strippable photoresist that dissolves in an alkaline aqueous solution such as caustic soda because the carboxyl group remains in the molecule. Examples of the starting resin of the base polymer include epoxy acrylates of the novolak type, bisphenol type, aliphatic type, etc., as well as urethane acrylate, polyester acrylate, and acrylic acrylate.

[0052] A reactive diluent is a monomer or oligomer having a (meth)acrylate group in its molecule that cures itself into a solid by a photopolymerization reaction upon UV irradiation, such as urethane acrylate, epoxy acrylate, acrylic acrylate, polyester acrylate, etc. The reactive diluent is used for the purpose of reducing the viscosity of the photoresist to make it easier to apply and increasing the crosslink density of the photoresist after UV irradiation.

[0053] A photoinitiator is a reactant that absorbs UV and generates radicals to initiate polymerization, such as benzophenone-based, acetophenone-based, benzoin ether-based, thioxanthone, etc.

[0054] Upon irradiation with UV, the photoresist cures by the bonding and crosslinking of the terminal acrylate groups of the base polymer and the reactive diluent. The uncured photoresist is removed by dissolving it in a weakly alkaline solution such as sodium carbonate solution. The cured photoresist becomes the partially formed etching protection layer 6.

[0055] The photoresist may contain a color former that develops color upon irradiation with light, a stabilizer that enables long-term storage of the photoresist, a dye that allows the presence of the photoresist to be confirmed, an organic solvent that facilitates application, etc. In order to improve the adhesion to the first metal layer 5 and the second metal layer 7, as the reactive diluent contained in the photoresist, a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer such as 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, N-vinylpyrrolidone, melamine acrylate or methacrylates corresponding to these acrylates is preferably used in an amount of 10% to 90% by weight based on the amount of the reactive diluent. If it is less than 10% by weight, the etching protection layer 6 formed by the photoresist does not have sufficient adhesion to the first metal layer 5 and the second metal layer 7, and if it exceeds 90% by weight, it will dissolve in the etching solution.

[0056] The etching protection layer 6 may be formed by coating with a screen, an inkjet, or a dispenser. Coating with a screen, an inkjet, or a dispenser means applying ink discharged by a screen ink, an inkjet ink, or a dispenser to a necessary location of the partially formed etching protection layer 6. Compared with providing the etching protection layer 6 with a photoresist, development is not required and the process is simplified. The ink for forming the etching protection layer 6 may be any ink as long as it can protect the second metal layer 7 in the etching process. After etching, the etching protection layer 6 formed by the ink is removed. After removing the etching protection layer 6, the surface of the second metal layer 7 is roughened to facilitate the formation of a wick. The etching protection layer 6 may be left in contact with the second metal layer 7.

[0057] When the ink used for screen printing contains a solvent, the ink is solidified by drying. The thermosetting type is cured by heating. The UV-curing type is cured by irradiating with UV.

[0058] The ink used for inkjet printing is a commercially available inkjet ink, and the UV-curing type is cured by irradiating with UV. A thermosetting type may also be used.

[0059] As the UV-curing type, the aforementioned photoresist can be used as the screen ink, the inkjet ink, or the ink discharged by the dispenser. It is not necessary to remove the uncured part of the UV from the ink. For example, when an epoxy resin that reacts with the carboxyl group of the aforementioned carboxyl group-containing novolak type epoxy acrylate is blended, the carboxyl group and the glycidyl group react, the heat resistance is improved, the coating film becomes strong, and a permanent resist that is not soluble in an alkaline aqueous solution can be obtained. A permanent resist may be used as the ink and cured by UV irradiation.

[0060] The ink discharged by the screen ink, inkjet ink, or dispenser for forming the etching protection layer 6 may be a thermoplastic resin or a thermosetting resin. The thermoplastic resin may be a polyester, polyurethane, acrylic resin, etc., and may be used by dissolving or dispersing it in a solvent or water. Also, a curing agent may be mixed before coating, and it may be cured at room temperature or by heating after coating to form a thermosetting resin.

[0061] A second metal layer 7 is provided in contact with the first metal layer 5 and the partially formed etching protection layer 6. The second metal layer 7 is a metal such as copper, a copper molybdenum alloy, or aluminum, and preferably has a thickness of 1 μm or more and 200 μm or less. If it is less than 1 μm, the wick formed in the sealed space 4 of the vapor chamber 1 to be formed is small, the moving speed of the liquefied working fluid becomes slow, and the cooling efficiency is poor. If it is 200 μm or more, the working efficiency of etching, which is a process in the manufacture of the vapor chamber 1, is poor, and the productivity is significantly reduced. Further considering the processability, 2 μm or more and 50 μm or less is preferable.

[0062] The second metal layer 7 is preferably formed by plating. In order to provide the second metal layer 7 by plating, it is preferable to impart conductivity to the etching protection layer 6. In order to impart conductivity to the etching protection layer 6, metal fine powders such as silver, nickel, and copper are added to the etching protection layer 6. In order to form the etching protection layer 6, metal fine powders are added to the photoresist, screen printing ink, inkjet printing ink, or ink ejected by a dispenser used, and the photoresist or ink added with the metal fine powders is applied to one surface of the first metal layer 5 to form the etching protection layer 6. The metal fine powder preferably has a particle size of 5.0 μm or less. By setting it to 5.0 μm or less, it is possible to cope with the thinning of the etching protection layer 6. The metal fine powder is preferably contained in an amount of 1 part by weight or more and 80 parts by weight or less based on the amount of components other than the metal fine powder of the etching protection layer 6. If it is less than 1 part by weight, when the second metal layer 7 is formed by plating, the formation of metal on the surface of the etching protection layer 6 becomes insufficient. If it exceeds 80 parts by weight, the strength of the etching protection layer 6 decreases, and there is a risk of dropping during the process.

[0063] The applied photoresist or ink imparted with conductivity is dried if it contains a solvent, and is cured by processes such as UV irradiation and heating to form the etching protection layer 6. Curing by UV irradiation is most suitable in terms of working efficiency. The photoresist for forming the etching protection layer 6 imparted with UV-curable type conductivity has the same configuration as the aforementioned photoresist. The photoresist includes a base polymer which is a (meth)acrylate compound, a photopolymerizable monomer, a dimer and an oligomer which are reactive diluents, a photoinitiator, and a polymerization accelerator. Optionally, it includes fillers such as silica, barium sulfate, and talc, coloring pigments, defoaming and leveling agents, polymerization inhibitors, organic solvents, epoxy curing agents, etc. The base polymer is 60% by weight or less, the reactive diluent is 5% by weight or more, the photoinitiator is 1% by weight or more and 10% by weight or less, and contains metal fine powders.

[0064] When curing the etching protective layer 6 by UV irradiation, due to the scattering of UV reflected by the metal fine powder, the photoresist can be cured by irradiating UV even in the areas that become the shadows of the metal fine powder during UV irradiation. The metal fine powder is preferably contained in the etching protective layer 6 in an amount of 1 part by weight or more and 80 parts by weight or less. If the amount is less than 1 part by weight, when forming the second metal layer 7 by plating, the formation of the metal on the surface of the etching protective layer 6 will be insufficient. If it exceeds 80 parts by weight, the strength of the etching protective layer 6 will decrease and there is a risk of falling off during the process. Also, there is a possibility that the curing of the photoresist, screen printing ink, inkjet printing ink, or ink applied by dispensing by UV irradiation may not be sufficiently performed. Further considering the processability, 5 parts by weight or more and 60 parts by weight or less are preferable.

[0065] In order to impart conductivity to the etching protective layer 6, carbon may be added to the etching protective layer 6. Carbon consists of carbon such as carbon fine powder, carbon fiber, and graphite and has conductivity. The addition amount of carbon is preferably contained in an amount of 1 part by weight or more and 80 parts by weight or less with respect to the amount of components other than carbon in the etching protective layer 6. Further, 5 parts by weight or more and 60 parts by weight or less are preferable.

[0066] To provide the second metal layer 7 in contact with the first metal layer 5 and the partially formed etching protective layer 6 by plating, the following method is used. The plating for providing the metal layer 7 is electroplating. When the etching protective layer 6 is non-conductive, it is necessary to make the surface of the etching protective layer 6 conductive by electroless plating or the like on the etching protective layer 6 before forming the second metal layer 7 by plating. When the etching protective layer 6 is conductive, conductivity is not required and electroplating can be directly performed, which can simplify the process and stabilize the quality. When performing copper plating as the metal layer 7, a commonly used method can be used. Since the etching protective layer 6 is dissolved or peeled off in an alkaline solution, it is necessary to perform plating in an acidic bath, and plating with a copper sulfate bath is preferable.

[0067] Using the metal member for manufacturing a vapor chamber according to Embodiment 1 shown in FIG. 2A, to manufacture the vapor chamber 1, a first member 2 constituting the vapor chamber 1 is formed. As shown in FIG. 7, an outer frame etching protection layer 10 is formed outside the region forming the sealed space 4 of the first metal layer 5.

[0068] For the outer frame etching protection layer 10, a photoresist is applied to the surface of the first metal layer 5, or a photosensitive dry film is attached, the areas other than the location where the outer frame etching protection layer 10 is to be formed are shielded by a mask, and by UV irradiation, the outer frame etching protection layer 10 is cured, and the uncured photoresist or photosensitive dry film is removed by development.

[0069] After forming the outer frame etching protection layer 10, the side of the first metal layer 5 is etched. As shown in FIG. 8, the first metal layer 5 in the portion where the outer frame etching protection layer 10 is not provided is removed by etching. Also, a part of the second metal layer 7 where the etching protection layer 6 is not formed is removed by etching. The depth of the second metal layer 7 removed by etching is 0.5 μm or more and 50 μm or less.

[0070] By one-time etching, all of the first metal layer 5 and a part of the second metal layer 7 can be etched. In the method for manufacturing a vapor chamber disclosed in Patent Document 6, the etching of the first metal layer 5 and the etching of a part of the second metal layer 7 have to be performed separately twice. Each etching is a half-etching, and the setting of the etching conditions is complicated. In the method for manufacturing a vapor chamber using the metal member for manufacturing a vapor chamber according to the present invention, the first member 2 constituting the vapor chamber 1 can be obtained by one-time etching.

[0071] When the first metal layer 5 and the second metal layer 7 are copper, the etching is performed using a ferric chloride solution or a cupric chloride solution. For the ferric chloride solution, 40 Baumé, specific gravity 1.385 (20 ° C.), ferric chloride 520 g / l or more, and hydrochloric acid 1-2% are used, but it is not limited thereto.

[0072] After etching, the outer frame etching protection layer 10 and the etching protection layer 6 are removed to obtain the first member 2 in FIG. 9. As shown in FIG. 1A, the recess of the obtained first member 2 is sealed by joining the second member 3, and the vapor chamber 1 having the sealed space 4 can be obtained. The etching protection layer 6 is removed after etching, but if it has a role such as imparting strength by remaining, it may be left without being removed.

[0073] As shown in FIG. 8, a part of the second metal layer 7 not covered by the etching protection layer 6 is removed by etching. At this time, if the wall surface of the recess formed by removing the first metal layer 5 coincides with the end of the etching protection layer 6, a recess is formed as shown in FIG. 8. However, the etching protection layer 6 may reach the lower part of the wall surface of the recess. In this case, when the etching protection layer 6 is removed, a gap is formed between the end of the first metal layer 5 on the side of the wall surface of the recess and the second metal layer 7. Such a gap may reduce the strength of the vapor chamber 1 and is preferably avoided.

[0074] When forming the etching protection layer 6 with ink, in the region of the recess of the first metal layer 5 formed by etching, when removing the cured photoresist, an etching protection layer 6 made of a permanent resist that is not removed is provided, and in other places, an etching protection layer 6 made of a removable photoresist or resin is provided. FIG. 15 shows the state after removing the removable etching protection layer 6 after etching. The removable etching protection layer 6 is removed, but the etching protection layer 6 that was not removed remains between the first metal layer 5 and the second metal layer 7 at the lower part of the wall surface of the recess. A gap is formed between the end of the wall surface of the recess of the first metal layer 5 and the second metal layer 7, and the strength of the vapor chamber 1 is not reduced.

[0075] The removal of the etching protection layer 6 is carried out by a method suitable for removing the photoresist or ink forming the etching protection layer 6. In the case of an alkali-peelable or soluble photoresist or ink, a sodium hydroxide or potassium hydroxide solution is used, and in the case of a solvent-peelable photoresist or ink, a polar solvent or a hydrocarbon solvent is used. The etching protection layer 6 is removed by dissolving or peeling it with a solution or solvent capable of removing the photoresist or ink.

[0076] After removing the etching protection layer 6, a roughening treatment may be performed to create a finer wick. For the roughening treatment, commercially available roughening treatment agents can be used, and the inner surface of the recess shown in FIG. 9 is treated with a roughening treatment agent such as Meck Etch Bond CZ or the Multi Bond series of MacDermid Performance Solutions Japan Co., Ltd. By the roughening treatment, fine irregularities are imparted to the inner surface of the recess. The movement of the working fluid in the form of a liquid can be enabled along the recesses of the imparted irregularities, and it can serve as a wick. There is also an effect that the surface area in the sealed space 4 increases and the cooling capacity is improved due to the formation of fine irregularities by the roughening treatment.

[0077] FIG. 2E shows the case where the etching protection layer 6 is formed over the entire region where the recess is formed. When this metal member for vapor chamber manufacturing is etched, after the first metal layer 5 is removed by etching, the etching protection layer 6 is present on the entire surface, and the second metal layer 7 is not etched. After removing the etching protection layer 6, the surface of the second metal layer 7 that appears on the entire surface is roughened. By roughening the surface of the second metal layer 7, fine irregularities are imparted to the surface of the second metal layer 7. The movement of the working fluid in the form of a liquid can be enabled along the recesses of the imparted fine irregularities, and it can serve as a wick.

[0078] For the joining of the first member 2 and the second member 3, a reflow device, a laser heating device, or a box oven can be used. As long as the joining material has good thermal conductivity and is not broken by the internal pressure during the operation of the vapor chamber 1, it can be used. Examples include solder and organic adhesives. For solder, commonly used SnAgCu-based, SnPb, etc. can be used, but low-temperature solder and high-temperature solder can also be used. Examples of soldering methods include manual soldering, metal mask printing using solder paste followed by heating in a reflow furnace or with a laser beam, and flow soldering. If necessary, the first member 2 and the second member 3 can be closely fixed with a jig or the like using a jig or a robot. The joining of the first member 2 and the second member 3 can be performed by any method as long as the vapor chamber 1 is not damaged during the operation of the vapor chamber 1.

[0079] The second member 3 is made of metal, and at the temperature at which the vapor chamber 1 is used, a metal with a thermal conductivity of 10 W / square meter·K or more can be used. Examples include copper, copper molybdenum alloy, and aluminum. When using a metal plate as the second member 3, the thickness is preferably 9 μm or more and 10000 μm or less.

[0080] Instead of a metal plate, the second member 3 may use a metal member with a recess formed like the first member 2. The second member 3 may be the same as the first member 2.

[0081] The sealing of the working fluid into the sealed space 4 can be performed by a general method, similar to a heat pipe or other vapor chambers. If necessary, the working fluid is injected from the filling port while cooling, the filling port is physically crushed, and then sealed by soldering, brazing, welding, etc. The filling port may be provided on the first member 2 or the second member 3, or formed on both the first member 2 and the second member 3. By sealing the working fluid, the vapor chamber 1 is completed.

[0082] The vapor chamber 1 includes a vaporization section that comes into contact with a device having a heating element as a part thereof, and a liquefaction section where the vaporized working fluid liquefies. The liquefied working fluid must return to the vaporization section. The liquefied working fluid returns to the vaporization section by moving through the etched grooves of the second metal layer 7 as flow paths. The grooves are formed with a narrow width, and the working fluid can quickly return to the vaporization section by moving due to capillary action. The grooves of the second metal layer 7 formed by etching are formed to have a width that causes capillary action.

[0083] (Embodiment 2) The metal member for manufacturing a vapor chamber according to Embodiment 2 is shown in FIG. 3. The metal member for manufacturing a vapor chamber according to Embodiment 2 includes an etching stop layer 8 on the surface of the second metal layer 7 of the metal member for manufacturing a vapor chamber according to Embodiment 1. The metal constituting the etching stop layer 8 is nickel, aluminum, tin, silver, copper, solder, etc. It is a metal that is not etched by an etching solution that etches the first metal layer 5 and the second metal layer 7 simultaneously. The thickness of the etching stop layer 8 is preferably 0.1 μm or more and 200 μm or less, and more preferably 0.5 μm or more and 100 μm or less. If it is thinner than 0.1 μm, it does not function as an etching stop layer 8 due to pinholes or the like. Also, if it exceeds 200 μm, the cooling capacity is inferior.

[0084] The metal member for manufacturing a vapor chamber according to Embodiment 2 is provided with an etching stop layer 8 on the surface of the second metal layer 7 of the metal member for manufacturing a vapor chamber of Embodiment 1, and the first metal layer 5, the etching protection layer 6, and the second metal layer 7 are the same as in Embodiment 1. The manufacturing method of the metal member for manufacturing a vapor chamber is also the same as in Embodiment 1.

[0085] The formation of the etching stop layer 8 on the surface of the second metal layer 7 is performed by electroplating. The etching stop layer 8 can be used as long as it is insoluble in the etching solution for etching the first metal layer 5 and the second metal layer 7, and nickel, aluminum, tin, silver, copper, solder, etc. can be used. When the first metal layer 5 and the second metal layer 7 are made of copper and the etching stop layer 8 is made of nickel, the etching solution is a ferric chloride or cupric chloride solution.

[0086] The metal member for vapor chamber manufacturing according to Embodiment 2, similar to the metal member for vapor chamber manufacturing according to Embodiment 1, forms an outer frame etching protection layer 10 as shown in FIG. 7. After forming the outer frame etching protection layer 10, etching is performed from the side of the metal layer 5. The first metal layer 5 in the portion where the outer frame etching protection layer 10 is not provided is removed by etching. Also, the second metal layer 7 where the etching protection layer 6 is not formed is removed by etching until it reaches the etching stop layer 8. FIG. 10 shows the state where the outer frame etching protection layer 10 and the etching protection layer 6 are removed. The second metal layer 7 is removed until the etching stop layer 8. The etching solution corrodes and removes all of the first metal layer 5 and the second metal layer 7 that is not covered by the etching protection layer 6 of the second metal layer 7 until it reaches the etching stop layer 8.

[0087] Using the metal member for vapor chamber manufacturing from which the outer frame etching protection layer 10 and the etching protection layer 6 have been removed as the first member 2, a vapor chamber 1 having a sealed space 4 is manufactured by sealing the concave portion of the first member 2 with the second member 3. This method is the same as in Embodiment 1.

[0088] When manufacturing the first member that constitutes the vapor chamber 1 using the metal member for manufacturing the vapor chamber according to Embodiment 1, since not all of the second metal layer 7 can be removed by etching, the etching liquid, etching temperature, and etching time for performing etching must be adjusted to leave a part of the etching of the second metal layer 7. This adjustment is complicated in the process. By providing the etching stop layer 8, it becomes possible to remove all of the second metal layer 7, the adjustment of the etching conditions becomes easy, and the etching time can be shortened.

[0089] In order to remove all of the second metal layer 7 up to the etching stop layer 8, the groove formed by the second metal layer 7 that is not removed by etching becomes deeper than in Embodiment 1. Its depth becomes the same as the thickness of the second metal layer 7. A groove deeper than the groove in Embodiment 1 enables the movement of a larger amount of liquefied working fluid. The vapor chamber 1 according to Embodiment 2 can move the liquefied working fluid from the liquefaction part to the vaporization part more quickly than the vapor chamber 1 according to Embodiment 1, and the cooling capacity of the vapor chamber 1 can be improved.

[0090] (Embodiment 3) The metal member for manufacturing the vapor chamber according to Embodiment 3 is shown in FIG. 4. The metal member for manufacturing the vapor chamber according to Embodiment 3 is provided with a third metal layer 11 on the surface of the etching stop layer 8 of the metal member for manufacturing the vapor chamber according to Embodiment 2. The first metal layer 5, the etching protection layer 6, the second metal layer 7, and the etching stop layer 8 are the same as in Embodiment 2. The manufacturing method of the metal member for manufacturing the vapor chamber is the same as in Embodiment 2 except for providing the third metal layer 11.

[0091] For the third metal layer 11, a metal with a thermal conductivity of 10 W / square meter·K or more can be used at the temperature at which the vapor chamber 1 is used. The third metal layer 11 is a metal such as copper, a copper-molybdenum alloy, or aluminum, and has a thickness of 9 μm or more and 10,000 μm or less. The third metal layer 11 is formed on the surface of the etching stop layer 8 by plating. Alternatively, a metal plate may be bonded to the surface of the etching stop layer 8 with an adhesive.

[0092] Etch the metal member for manufacturing a vapor chamber according to Embodiment 3 in the same manner as in Embodiment 2. The first member 2 obtained by etching is shown in FIG. 11. It is the same as in Embodiment 2 except that a third metal layer 11 is provided on the non-etching side of the etching stop layer 8. Manufacture the vapor chamber 1 in the same manner as in Embodiment 2.

[0093] The vapor chamber 1 obtained according to Embodiment 3 can increase the strength of the vapor chamber 1 by providing the third metal layer 11 on the outer surface of the etching stop layer 8 as compared with the vapor chamber 1 obtained according to Embodiment 2.

[0094] FIG. 11 shows a state in which all of the first metal layer 5 and the etching stop layer 8 of the second metal layer 7 not covered by the etching protection layer 6 have been removed by etching. After this, the etching stop layer 8 not covered by the second metal layer 7 may be further removed by etching. FIG. 14 shows the process of removing the etching stop layer 8. The etching of the etching stop layer 8 is performed with an etching solution that does not corrode the first metal layer 5, the second metal layer 7, and the third metal layer 11.

[0095] By removing the etching stop layer 8, the third metal layer 11 is exposed. By roughening the exposed surface of the third metal layer 11, fine irregularities can be formed on the exposed surface of the third metal layer 11, and a wick can be formed by the fine recesses.

[0096] Regarding Embodiment 1 to Embodiment 3, when manufacturing the first member that constitutes the paper chamber 1, as shown in FIG. 12A, the first member 2 that constitutes the vapor chamber 1 can be manufactured by multi-sided machining from the first metal layer 5 which is a single metal plate. By creating a large-sized metal member for manufacturing a vapor chamber, it becomes possible to manufacture the vapor chamber 1 by multi-sided machining. For example, by manufacturing a metal member for manufacturing a vapor chamber with a size that is 5×3 to 100×80 times that of the vapor chamber 1 by multi-sided machining, the manufacturing cost of the vapor chamber 1 can be reduced.

[0097] As shown in FIGS. 12A and 12B, a large-sized metal plate from which the first member 2 can be manufactured by multi-sided machining is used as the metal layer 5 to manufacture a metal member for manufacturing a vapor chamber. In such a case of multi-sided machining, when manufacturing the vapor chamber 1, in order to enclose the working fluid in the sealed space 4, the working fluid enclosure path 12 can be provided by etching the surface of the first metal layer 5 when etching the first metal layer 5 and the second metal layer 7. The working fluid enclosure path 12 for enclosing the working fluid is provided in contact with the recess that forms the sealed space 4 as shown in FIG. 12A or FIG. 12B.

[0098] FIGS. 13A and 13B are modified examples of the first member. FIG. 13A shows that when etching the first metal layer 5 to form a recess, the recess is formed in a spiral shape. An outer frame etching protection layer 10 can be formed on the black portion of FIG. 13A, and the recess can be formed by etching in a spiral shape. FIG. 13B shows that when etching the metal layer 5 to form a recess, the recess is formed in a radial shape. By forming an outer frame etching protection layer 10 on the black portion of FIG. 13B, the recess can be formed by etching in a radial shape. When it is desired to dissipate heat uniformly in all directions from the device, it is preferable to form the sealed space 4 in a spiral shape or a radial shape.

Explanation of Reference Numerals

[0099] 1: Vapor chamber 2: First member 3: Second member 4: Sealed space 5: First metal layer 6: Etching protection layer 7: Second metal layer 8: Etching stop layer 9: Photoresist layer 10: Outer frame etching protection layer 11: Third metal layer 12: Working fluid enclosure path

Claims

1. A metal member for manufacturing a vapor chamber is used to form at least a first member when manufacturing a vapor chamber including a first member made of a metal and a second member made of a metal that forms a sealed space in which a working fluid is sealed together with the first member, the metal member comprising: The metal member for manufacturing a vapor chamber includes, from the side forming the sealed space, a first metal layer, a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer is used in an amount of 10 to 90% by weight based on the amount of a reactive diluent, and a photoresist is hardened to which is added carbon that provides electrical conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite, and an etching protection layer that is partially formed by hardening the photoresist. A metal component for manufacturing a vapor chamber, characterized in that the etching protection layer is not made conductive, and a second metal layer is formed in sequence by plating directly onto the first metal layer and the partially formed etching protection layer.

2. The metal member for manufacturing a vapor chamber according to claim 1, A metal component for manufacturing a vapor chamber, comprising an etching stop layer on the outside of the second metal layer.

3. The metal member for manufacturing a vapor chamber according to claim 1 or 2, A metal component for manufacturing a vapor chamber, characterized in that the amount of carbon added is 1 part by weight or more and 80 parts by weight or less relative to the amount of components other than carbon in the etching protection layer.

4. The metal member for manufacturing a vapor chamber according to claim 1 or 2, A metal component for manufacturing a vapor chamber, characterized in that the etching protection layer which is partially formed is formed continuously.

5. The metal member for manufacturing a vapor chamber according to claim 1 or 2, A metal component for manufacturing a vapor chamber, characterized in that the etching protection layer formed partially is formed in an isolated manner.

6. A method for manufacturing a metal member for use in manufacturing a vapor chamber, the metal member being used to form at least the first member when manufacturing a vapor chamber including a first member made of a metal and a second member made of a metal that forms, together with the first member, an enclosed space in which a working fluid is sealed, the method comprising: A metal plate is used as a first metal layer, and a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer is used in an amount of 10% by weight to 90% by weight based on the amount of a reactive diluent on the inside of a region that forms the sealed space on one side of the first metal layer, and a photoresist to which carbon that imparts electrical conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite, is added is hardened to partially form an etching protection layer; A method for manufacturing a metal component for vapor chambers, characterized in that a second metal layer is directly plated on the first metal layer and the surface of the partially formed etching protection layer side without making the etching protection layer conductive.

7. The method for producing a metal member for producing a vapor chamber according to claim 6, A method for manufacturing a metal member for use in manufacturing a vapor chamber, comprising providing an etching stop layer on the outside of the second metal layer.

8. The method for producing a metal member for producing a vapor chamber according to claim 6, A photoresist is applied to the inside of the region of the first metal layer that forms the sealed space, the photoresist being made by using a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer in an amount of 10% by weight to 90% by weight based on the amount of a reactive diluent, and containing carbon that provides electrical conductivity, which is one or more of carbon fine powder, carbon fiber, and graphite; A method for manufacturing a metal component for vapor chamber manufacturing, comprising: curing the photoresist in a predetermined location and removing the uncured photoresist to form the etching protection layer.

9. The method for producing a metal member for producing a vapor chamber according to claim 6, A method for manufacturing a metal component for manufacturing a vapor chamber, characterized in that ink is applied to a predetermined location inside the area forming the sealed space of the first metal layer by silk screen, inkjet or dispenser, and the ink is hardened to form the etching protection layer.

10. The method for producing a metal member for producing a vapor chamber according to any one of claims 6 to 9, A method for manufacturing a metal member for use in manufacturing a vapor chamber, comprising forming the etching protection layer continuously.

11. The method for manufacturing a metal member for manufacturing a vapor chamber according to any one of claims 6 to 9, A method for manufacturing a metal member for use in manufacturing a vapor chamber, comprising forming the etching protection layer in isolation.

12. A method for manufacturing a vapor chamber including a first member made of a metal and a second member made of a metal that forms a sealed space in which a working fluid is sealed together with the first member, comprising: A metal component for manufacturing a vapor chamber includes, in order from the side forming the sealed space, a first metal layer, an etching protection layer partially formed by hardening a photoresist to which is added a hydrophilic acrylic monomer or a hydrophilic methacrylic monomer in an amount of 10 to 90% by weight based on the amount of a reactive diluent and carbon that imparts electrical conductivity, which is at least one of carbon fine powder, carbon fiber, and graphite, and a second metal layer formed by direct plating on the first metal layer and the partially formed etching protection layer without making the etching protection layer conductive, and an outer frame etching protection layer is formed on the first metal layer except for the region forming the sealed space, Etching the first metal layer side inside the outer frame etching protection layer to remove all of the first metal layer and a part of the second metal layer that is not covered by the partially formed etching protection layer; removing the outer frame etching protection layer and the partially formed etching protection layer; A method for manufacturing a vapor chamber, characterized in that the first member is a member having a recess on one side, and the sealed space is formed by sealing the recess of the first member with the second member.

13. The method for manufacturing a vapor chamber according to claim 12, providing an etching stop layer on the outer side of the second metal layer of the metal member for manufacturing the vapor chamber; A method for manufacturing a vapor chamber, comprising the steps of: removing, by the etching, all of the second metal layer that is not covered by the partially formed etching protection layer.

Images