Die Bonding Apparatus and Method of Manufacturing Semiconductor Device

Abstract

To provide a technique for further reducing stress applied to a die.SOLUTION: A die bonding device includes: a peeling unit capable of sucking a dicing tape to which a workpiece is attached and peeling the workpiece from the dicing tape; and a control portion that controls the operation of the peeling unit. The workpiece is a die made of a semiconductor substrate or a die plate made of a ductile material having no yield point and having approximately the same size as that of the die. The control portion is configured to set sucking force by the peeling unit when the die is peeled off on the basis of the deformation amount of the die plate formed when the die plate is peeled off by the peeling unit.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a die bonding apparatus and is applicable to, for example, a die bonder including a peeling unit.

Background Art

[0002] In a part of the process of assembling a package by mounting a semiconductor chip called a die on a substrate such as a wiring board or a lead frame, there are a dicing process of dividing the die from a semiconductor wafer and a die bonding process of mounting the divided die on the substrate.

[0003] In the die bonding process, there is a peeling process of peeling the die divided from the semiconductor wafer. In the peeling process, the die is peeled one by one from the dicing tape held by the pickup device by the peeling unit from the back surface of the dicing tape, and picked up using a suction nozzle such as a collet provided on the head. Here, the dicing tape is an adhesive tape for fixing a workpiece such as a semiconductor wafer in the dicing process.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In recent years, due to the emergence of die stack packages and 3D-NAND (3-dimensional NAND flash), semiconductor wafers (dies) have become thinner. As the die becomes thinner, the rigidity of the die becomes extremely lower than the adhesive force of the dicing tape. Therefore, when using a die thinner than the thickness of the dicing tape, cracks or deformation will occur due to the stress during the pickup operation.

[0006] An object of the present disclosure is to provide a technique for further reducing the stress applied to a die. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

Means for Solving the Problems

[0007] The outline of typical ones among the present disclosures is briefly described as follows. That is, a die bonding apparatus includes a peeling unit that can adsorb a dicing tape to which a workpiece is attached and peels the workpiece from the dicing tape, and a control unit that controls the operation of the peeling unit. The workpiece is a die formed of a semiconductor substrate or a die plate formed of a ductile material having no yield point and having substantially the same size as the die. The control unit is configured to set the adsorption force of the peeling unit when the die is peeled based on the amount of deformation of the die plate formed when the die plate is peeled by the peeling unit.

Advantages of the Invention

[0008] According to the present disclosure, it is possible to further reduce the stress applied to the die.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Best Mode for Carrying Out the Invention

[0010] Hereinafter, embodiments and modification examples will be described with reference to the drawings. However, in the following description, the same reference numerals may be given to the same components, and repeated descriptions may be omitted. Note that, for the sake of clarity of explanation, the drawings may schematically show the width, thickness, shape, etc. of each part as compared with the actual aspect, but this is merely an example and does not limit the interpretation of the present disclosure.

[0011] The configuration of the die bonder in the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a conceptual diagram of the die bonder in the embodiment as viewed from above. FIG. 2 is a diagram for explaining the operations of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 1.

[0012] A die bonder 10, which is an example of a die bonding apparatus, generally includes a die supply unit 1, a pickup unit 2, an intermediate stage unit 3, a bonding unit 4, a transfer unit 5, a substrate supply unit 6, a substrate discharge unit 7, and a control unit 8 that monitors and controls the operations of each unit. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply unit 1 is arranged on the front side of the die bonder 10, and the bonding unit 4 is arranged on the back side. Here, on the substrate S, one or more product areas (hereinafter referred to as package area P) that will become the final 1 package are printed.

[0013] The die supply unit 1 includes a wafer holding stage 12 that holds the semiconductor wafer 11, and a peeling unit 13 shown by a dotted line that peels the die D from the semiconductor wafer 11. The die supply unit 1 is moved in the XY-axis directions by a driving means (not shown) and moves the die D to be picked up to the position of the peeling unit 13. Here, on the substrate S, one or more product areas (hereinafter referred to as package area P) that will become the final 1 package are printed.

[0014] The pickup unit 2 includes a pickup head 21 for picking up the die D, a Y drive unit 23 of the pickup head for moving the pickup head 21 in the Y-axis direction, and drive units (not shown) for moving the collet 22 up and down, rotating it, and moving it in the X-axis direction. The pickup head 21 has a collet 22 for sucking and holding the peeled die D at its tip, picks up the die D from the die supply unit 1, and places it on the intermediate stage 31. The pickup head 21 has drive units (not shown) for moving the collet 22 up and down, rotating it, and moving it in the X-axis direction.

[0015] The intermediate stage unit 3 includes an intermediate stage 31 for temporarily placing the die D and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

[0016] The bonding unit 4 includes a bonding head 41, a Y drive unit 43, and a substrate recognition camera 44. The bonding head 41 is provided with a collet 42 for sucking and holding the die D at its tip, similar to the pickup head 21. The Y drive unit 43 moves the bonding head 41 in the Y-axis direction. The substrate recognition camera 44 images a position recognition mark (not shown) in the package area P of the substrate S and recognizes the bonding position. The bonding unit 4 picks up the die D from the intermediate stage 31 and bonds it onto the package area P of the conveyed substrate S, or bonds it in a form of laminating on top of a die that has already been bonded onto the package area P of the substrate S. With such a configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the stage recognition camera 32 and picks up the die D from the intermediate stage 31. Then, the bonding head 41 bonds the die D onto the package area P of the substrate or in a form of laminating on top of a die that has already been bonded onto the package area P of the substrate S based on the imaging data of the substrate recognition camera 44.

[0017] The transfer unit 5 has a substrate transfer claw 51 that grips and transfers the substrate S, and a transfer lane 52 along which the substrate S moves. The substrate S is moved by driving a nut (not shown) of the substrate transfer claw 51 provided on the transfer lane 52 with a ball screw (not shown) provided along the transfer lane 52. With such a configuration, the substrate S moves from the substrate supply unit 6 to the bonding position along the transfer lane 52, and after bonding, moves to the substrate discharge unit 7 and delivers the substrate S to the substrate discharge unit 7.

[0018] The control unit 8 includes a memory that stores a program (software) for monitoring and controlling the operations of each part of the die bonder 10, and a central processing unit (CPU) that executes the program stored in the memory.

[0019] Next, the configuration of the die supply unit 1 will be described with reference to FIG. 3. FIG. 3 is a schematic cross-sectional view showing the main part of the die supply unit shown in FIG. 1.

[0020] The die supply unit 1 includes a wafer holding stage 12 that moves in the horizontal direction (XY-axis direction), and a peeling unit 13 that moves in the vertical direction. The wafer holding stage 12 has an expand ring 15 that holds the wafer ring 14, and a support ring 17 that horizontally positions a dicing tape 16 to which a plurality of dies D are adhered and held on the wafer ring 14. The peeling unit 13 is disposed inside the support ring 17.

[0021] When the die supply unit 1 raises the die D, it lowers the expand ring 15 that holds the wafer ring 14. As a result, the dicing tape 16 held by the wafer ring 14 is stretched, the interval between the dies D widens, the die D is pushed up from below the die D by the peeling unit 13, and the pick-up property of the die D is improved. Note that the adhesive for adhering the die to the substrate changes from a liquid state to a film state, and a film-like adhesive material called a die attach film (DAF) 18 is attached between the semiconductor wafer 11 and the dicing tape 16. In the semiconductor wafer 11 having the die attach film 18, dicing is performed on the semiconductor wafer 11 and the die attach film 18. Therefore, in the peeling process, the semiconductor wafer 11 and the die attach film 18 are peeled from the dicing tape 16. Hereinafter, the die attach film 18 will be omitted and the peeling process will be described.

[0022] As shown in FIG. 2, the internal space of the peeling unit 13 communicates with a vacuum pump 193 via a pipe 191 and a valve 192 as a pressure regulator. Further, a pressure sensor 194 for monitoring the vacuum pressure realized in the internal space by the vacuum pump 193 is attached to the pipe 191. The valve 192, the vacuum pump 193, and the pressure sensor 194 are connected to the control unit 8. The control unit 8 controls the operation of the vacuum pump 193 based on the signal received from the pressure sensor 194. In this embodiment, under the control of the control unit 8, the vacuum pressure realized in the internal space by the valve 192 and the vacuum pump 193 can be changed, and an appropriate vacuum pressure (adsorption force) can be set at any time according to various dies having different sizes and aspect ratios. The pipe 191, the valve 192, the vacuum pump 193, and the pressure sensor 194 constitute a suction mechanism.

[0023] Next, the peeling unit 13 will be described with reference to FIGS. 4 and 5. FIG. 4 is a top view of the peeling unit shown in FIG. 2. FIG. 5 is a cross-sectional view of the main part of the peeling unit shown in FIG. 4, showing a state of being in contact with the dicing tape.

[0024] On the peripheral portion of the upper surface of the peeling unit 13, a dome plate 132 is provided with a plurality of suction ports 132a and a plurality of grooves 132b connecting the plurality of suction ports 132a. The plurality of suction ports 132a are connected to the above-described suction mechanism via the internal space of the dome plate 132.

[0025] At the center of the peeling unit 13, four blocks 131a to 131d that push up the dicing tape 16 upward are incorporated. The three outer blocks 131a to 131c are square tubular, and the innermost block 131d is square columnar. The four blocks 131a to 131d are arranged such that a second block 131b having a smaller diameter than that of the first block 131a having the largest diameter is disposed inside the first block 131a, a third block 131c having a smaller diameter than that is disposed, and a fourth block 131d having the smallest diameter is disposed further inside. The gap 131g between the blocks 131a to 131d and the gap 131f between the dome plate 132 and the block 131a are connected to the above-described suction mechanism via the internal space of the dome plate 132.

[0026] Among the four blocks 131a to 131d, the outermost block 131a having the largest diameter is slightly smaller in diameter than the die D to be peeled. As a result, the corner portion on the outer periphery of the upper surface of the block 131a is positioned slightly inside the outer edge of the die D, so that the force for peeling the die D and the dicing tape 16 can be concentrated at the starting point (the outermost peripheral portion of the die D) when they are peeled.

[0027] The four blocks 131a to 131d can move up and down independently by a driving unit (not shown). The driving unit includes, for example, a motor and a plunger mechanism that converts the rotation of the motor into vertical movement by a cam or a link. The heights of the upper surfaces of the four blocks 131a to 131d are equal to each other in the initial state (when the blocks 131a to 131d are not operating), and are equal to or lower than the height of the upper surface of the dome plate 132.

[0028] For example, the peeling unit 13 can perform an operation of simultaneously pushing up four blocks 131a to 131d, then further simultaneously pushing up the inner blocks 131b to 131d, then further simultaneously pushing up blocks 131c and 131d, and then further pushing up block 131d to form a pyramid shape. Also, for example, the peeling unit 13 can perform an operation of pushing up the four blocks 131a to 131d simultaneously and then lowering them in the order of block 131a, block 131b, and block 131c. In the present disclosure, the latter operation is referred to as RMS (Reverse Multi Step).

[0029] Inside the plurality of suction ports 132a, the gaps between the blocks 131a to 131d, and the gap between the dome plate and the block 131a are depressurized by a suction mechanism when the peeling unit 13 is raised and its upper surface is brought into contact with the back surface of the dicing tape 16. At this time, the back surface of the dicing tape 16 is sucked downward and adheres closely to the upper surface of the dome plate 132.

[0030] Next, a method for manufacturing a semiconductor device using the die bonder in the embodiment will be described with reference to FIG. 6. FIG. 6 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. 1.

[0031] (Step S11: Wafer / Substrate Loading Process) The wafer ring 14 holding the dicing tape 16 to which the die D divided from the semiconductor wafer 11 is attached is stored in a wafer cassette (not shown) and carried into the die bonder 10. The control unit 8 supplies the wafer ring 14 from the wafer cassette filled with the wafer ring 14 to the die supply unit 1. Also, a substrate S is prepared and carried into the die bonder 10. The control unit 8 attaches the substrate S to the substrate transfer claw 51 at the substrate supply unit 6.

[0032] (Step S12: Pickup Process) As described above, the control unit 8 peels off the die D and picks up the peeled die D from the semiconductor wafer 11. In this way, the die D peeled from the dicing tape 16 together with the die attach film 18 is adsorbed and held by the collet 22 and conveyed to the next process (step S13). Then, when the collet 22 that has conveyed the die D to the next process returns to the die supply unit 1, the next die D is peeled from the dicing tape 16 according to the above-described procedure, and the die D is peeled one by one from the dicing tape 16 according to the same procedure thereafter.

[0033] (Step S13: Bonding process) The control unit 8 mounts the picked-up die on the substrate S or stacks it on the die that has already been bonded. The control unit 8 places the die D picked up from the semiconductor wafer 11 on the intermediate stage 31, picks up the die D again from the intermediate stage 31 with the bonding head 41, and bonds it to the conveyed substrate S.

[0034] (Step S14: Substrate unloading process) The control unit 8 takes out the substrate S to which the die D is bonded from the substrate transfer claws 51 at the substrate unloading unit 7. The substrate S is unloaded from the die bonder 10.

[0035] As described above, the die D is mounted on the substrate S via the die attach film 18 and unloaded from the die bonder. Thereafter, it is electrically connected to the electrodes of the substrate S via Au wires in the wire bonding process. When manufacturing a stacked package, subsequently, the substrate S on which the die D is mounted is carried into the die bonder, and a second die D is stacked on the die D mounted on the substrate S via the die attach film 18. Then, after being unloaded from the die bonder, it is electrically connected to the electrodes of the substrate S via Au wires in the wire bonding process. The second die D is peeled from the dicing tape 16 by the method described above and then conveyed to the pelletizing process and stacked on the die D. After the above process is repeated a predetermined number of times, the substrate S is conveyed to the molding process, and the stacked package is completed by sealing the plurality of die Ds and Au wires with a molding resin (not shown).

[0036] As described above, when assembling a stacked package in which a plurality of dies are three-dimensionally mounted on a substrate, in order to prevent an increase in the package thickness, it may be required to reduce the thickness of the die to several tens of μm or less. On the other hand, since the thickness of the dicing tape is about 100 μm, the thickness of the dicing tape is about 2 to 5 times the thickness of the die. When trying to peel such a thin die from the dicing tape, deformation of the die following the deformation of the dicing tape is more likely to occur significantly. If the die is cracked, for example, it can be easily confirmed by an appearance inspection using an imaging device such as the stage recognition camera 32, but deformation is difficult to confirm, and there is a risk that deformation may lead to product defects.

[0037] Regarding defects such as deformation, it is necessary to detect, analyze, and improve stress. Therefore, confirmation may be performed using the vacuum leak (leakage amount) after adsorbing the thin die with a collet. In this method, usually, no vacuum leak occurs, and the deformation is confirmed by utilizing the fact that only the deformation location of the die has a different leakage amount depending on the arrangement of the suction holes of the collet. However, since the leakage amount may not be detected depending on the arrangement of the suction holes of the collet, it is not an effective method for all thin dies. Also, since the quantification of stress on the thin die has not been clearly established, it is not clear to what extent breakage and deformation will occur. It is also conceivable to attach a sensor or the like to the die to confirm the amount of deformation and the stress applied, but when trying to confirm the stress, the rigidity increases due to the sensor, so the stress cannot be clearly determined.

[0038] Next, an example of the RMS operation in the operation of picking up the die D from the dicing tape 16 will be described with reference to FIGS. 7(a) to 7(d). FIG. 7(a) is a diagram showing a state in which the collet is in contact with the die. FIG. 7(b) is a diagram showing a state in which all the blocks are pushed up simultaneously. FIG. 7(c) is a diagram showing a state in which the outermost peripheral block is pulled down. FIG. 7(d) is a diagram showing a state in which the die is adsorbed by the collet and lifted.

[0039] To peel the die D from the dicing tape 16 using the die supply unit 1 equipped with the peeling unit 13 as described above, first, move the central portion (block 131) of the peeling unit 13 under one die D to be peeled. At the same time, move the collet 22 above this die D. The bottom surface of the collet 22 supported by the pickup head 21 is provided with a suction port whose interior is depressurized, enabling selective suction and holding of only one die D to be peeled.

[0040] Next, as shown in Fig. 7(a), raise the peeling unit 13 and bring its upper surface into contact with the back surface of the dicing tape 16, and at the same time, depressurize the interiors of the aforementioned suction ports 132a, grooves 132b, and gaps 132g. Here, the upper surface of the block 131 has irregularities, and the concave portions communicate with the gaps 132g. As a result, the dicing tape 16 in contact with the die D to be peeled adheres closely to the upper surface of the block 131. Also, the dicing tape 16 in contact with other die D adjacent to this die D adheres closely to the peripheral portion of the upper surface of the peeling unit 13.

[0041] Also, almost simultaneously with the raising of the peeling unit 13, lower the collet 22, bring the bottom surface of the collet 22 into contact with the upper surface of the die D to be peeled to suck the die D, and gently press the die D downward. In this way, when sucking the dicing tape 16 downward using the peeling unit 13, sucking the die D upward using the collet 22 can promote the peeling of the dicing tape 16 and the die D due to the upward push of the block 131.

[0042] Next, as shown in FIG. 7(b), the blocks 131 (the four blocks 131a to 131d) are simultaneously pushed upward to apply an upward load to the back surface of the dicing tape 16, thereby pushing up the die D and the dicing tape 16. At this time, the back surface of the die D is supported by the upper surface (contact surface) of the block 131 via the dicing tape 16 to reduce the bending stress applied to the die D, and the outer periphery (corner portion) of the upper surface of the block 131 is disposed inside the outer periphery of the die D. As a result, the stress for peeling is concentrated on the interface serving as the peeling starting point between the die D and the dicing tape 16, and the peripheral portion of the die D is efficiently peeled from the dicing tape 4. At this time, the dicing tape 16 below the other die D adjacent to the die D to be peeled is sucked downward and brought into close contact with the peripheral portion of the upper surface of the peeling unit 13, whereby the peeling of the dicing tape 16 at the peripheral portion of the die D can be promoted.

[0043] The die D rises while being sandwiched between the collet 22 and the block 131. However, since the peripheral portion of the dicing tape 16 remains adsorbed to the dome plate 132, tension is generated around the die D. As a result, the dicing tape 16 is peeled around the die D. However, at this time, the periphery of the die D receives stress from below and bends. When the upward movement of the block 131 is stopped and the standby state is maintained, the peeling of the dicing tape 16 proceeds, and the bending of the die D may return to its original state (elastic deformation). When the die D is thin or the force for adsorbing the dicing tape 16 is strong, the die D may be plastically deformed or damaged.

[0044] Next, as shown in FIG. 7(c), the outermost peripheral block 131a is pulled down. As a result, the position of the outer periphery (corner) of the upper surface of the block 131b that supports the die D moves further inward compared to the state where it was supported by the block 131a. Therefore, the peeling between the die D and the dicing tape 16 proceeds from a region outside the outer periphery of the upper surface of the block 131b toward the center of the die D. Then, the outer peripheral block 131b is pulled down. As a result, the position of the outer periphery (corner) of the upper surface of the block 131c that supports the die D moves further inward compared to the state where it was supported by the block 131b. Therefore, the peeling between the die D and the dicing tape 16 proceeds from a region outside the outer periphery of the upper surface of the block 131c toward the center of the die D. Then, the outer peripheral block 131c is pulled down. As a result, the position of the outer periphery (corner) of the upper surface of the block 131d that supports the die D moves further inward compared to the state where it was supported by the block 131c. Therefore, the peeling between the die D and the dicing tape 16 proceeds from a region outside the outer periphery of the upper surface of the block 131d toward the center of the die D. During these peeling operations, if no deformation has occurred in the state of FIG. 7(b), deformation of the die D may occur, or if deformation has occurred in the state of FIG. 7(b), the deformation of the die D may progress or lead to breakage.

[0045] Subsequently, as shown in FIG. 7(d), by pulling down the block 131d and pulling up the collet 22 upward, the operation of peeling the die D from the dicing tape 16 is completed. Note that the upper surface of the block 131d has a small area such that when the block 131d is pulled down, the die D can be peeled from the dicing tape 16 only by the suction force of the collet 22. The deformation etc. of the die D that occurred in the states of FIGS. 7(b) and 7(c) are adsorbed by the collet 22 without returning to their original state.

[0046] Next, a method for suppressing deformation or breakage of the die due to the pickup operation will be described. In the present embodiment, a pickup operation is performed on a die plate DP composed of a thin plate of a material that is easily plastically deformed instead of the die D, the amount of deformation of the die D is grasped based on the amount of deformation of the die plate DP, and the deformation of the die D is suppressed based thereon.

[0047] First, the die plate DP will be described with reference to FIGS. 8(a), 8(b), and 9. FIG. 8(a) is a top view showing a wafer in the embodiment, and FIG. 8(b) is a front view of the wafer shown in FIG. 8(a). FIG. 9 is a diagram showing a stress-strain curve.

[0048] The die plate DP is, for example, a plain flat plate, has approximately the same size as the die D, and is rectangular in plan view. The die plate DP is formed, for example, by dicing a wafer W in which a disk-shaped ductile material having approximately the same thickness as the die D is attached to a dicing tape similar to the dicing tape 16 of the semiconductor wafer 11, as shown in FIGS. 8(a) and 8(b). The wafer W is held by the wafer ring 14 in the same manner as the semiconductor wafer 11. Here, plastic deformation is deformation that remains even after the external force is removed, and is deformation that occurs when an external force exceeding the yield point acts. The deformation remaining after the force is removed is also referred to as residual deformation or permanent deformation. A ductile material is a material that undergoes fracture accompanied by large plastic deformation when a force acts, and includes copper (Cu), aluminum (Al), stainless steel (SUS), plastic, rubber, and the like.

[0049] As shown in FIG. 9, a brittle material (BM) breaks without much elongation and requires a large stress (σ) to be slightly deformed, so it is not preferable as the material of the die plate DP. Also, even among ductile materials, mild steel (MS) etc. have a yield point (σ UY)In the above strain region, a small stress (σ) is sufficient to cause a slight deformation, but the relationship between stress (σ) and strain (ε) is not nearly linear, which is not preferable. Among ductile materials, a material (DM) that requires a small stress (σ) to cause a slight deformation and has a relationship between stress (σ) and strain (ε) that is nearly linear is suitable as the die plate DP. Note that the die D formed of a semiconductor such as silicon (Si) or silicon carbide (SiC) has the characteristics of the brittle material (BM) shown in FIG. 9. Therefore, the die plate DP is composed of a ductile material without a yield point. As the ductile material, for example, copper (Cu) is used. Cu is a more ductile material than Si, etc., so it is less likely to crack and the elongation due to deformation makes it easier to observe the stress during peeling.

[0050] Next, a method for setting the adsorption force in the peeling unit to prevent deformation or breakage of the die due to the pickup operation will be described with reference to FIGS. 10 and 11. FIG. 10 is a flowchart for explaining a method for obtaining the correlation between the die deformation amount and the die plate deformation amount. FIG. 11 is a flowchart for explaining a method for setting the adsorption force based on the die plate deformation amount.

[0051] In the present embodiment, first, as shown in FIG. 10, the correlation between the die deformation amount and the die plate deformation amount is obtained. This step (the first step) is generally performed only once. Thereafter, as shown in FIG. 11, using the correlation obtained in the first step, the adsorption force is set based on the deformation amount of the die plate newly measured. This step (the second step) is performed every time the type of die or the like is changed.

[0052] First, a method for obtaining the correlation between the die deformation amount and the die plate deformation amount in the first step will be described with reference to FIG. 10.

[0053] (Obtaining correlation data between adsorption force and die deformation, etc.: Step S21) Step S21 will be described with reference to FIGS. 7(a) to 7(d). After picking up die D according to the sequence shown in FIGS. 7(a) to 7(d), remove die D from collet 22, observe deformation and breakage, and measure the amount of deformation if there is any. Record the type of die D, the adsorption force of peeling unit 13, the presence or absence of deformation and breakage of die D, and the amount of deformation of die D at that time. Then, change the adsorption force of peeling unit 13, pick up die D, measure the type of die, the adsorption force of peeling unit 13, the presence or absence of deformation and breakage of die D, and the amount of deformation of die D, and record them in the memory of control unit 8 or the memory of an external control device such as the die bonder 10 (hereinafter simply referred to as the storage device). Here, the adsorption force is the pressure for evacuating the inside of suction port 132a, groove 132b, and gap 132g of peeling unit 13, and can be adjusted, for example, by the opening degree of valve 192.

[0054] Also, change the type of die, pick up die D, and record in the storage device the type of die, the adsorption force of peeling unit 13, the presence or absence of deformation and breakage, the amount of deformation, etc., and the correlation (third correlation data). Here, the type of die is, for example, the thickness of the die, the size of the die within the range that can be peeled by the same peeling unit, the type of IC formed on the die, etc. Thereby, the correlation (third correlation data) between the adsorption force in peeling unit 13 and the amount of deformation of die D is obtained.

[0055] (Obtaining correlation data between adsorption force and die plate deformation: Step S22) Step S22 will be described with reference to FIGS. 12(a) to 12(d). FIG. 12(a) is a view showing a state where the collet is in contact with the die plate, and corresponds to FIG. 7(a). FIG. 12(b) is a view showing a state where all the blocks are pushed up simultaneously, and corresponds to FIG. 7(b). FIG. 12(c) is a cross-sectional view showing a state where the outermost peripheral block is pulled down, and corresponds to FIG. 7(c). FIG. 12(d) is a view showing a state where the die plate is adsorbed by the collet and lifted, and corresponds to FIG. 7(d).

[0056] As shown in FIGS. 12(a) to 12(d), the pickup operation of the die plate DP is performed in the same manner as the pickup operation of the die D shown in FIGS. 7(a) to 7(d). Then, the die plate DP is removed from the collet 22 and the deformation is observed. If there is deformation, the amount of deformation is measured. At that time, the adsorption force of the peeling unit 13, the presence or absence of deformation of the die plate DP, and the amount of deformation are recorded in the storage device. Then, the adsorption force of the peeling unit 13 is changed, the die plate DP is picked up, and the adsorption force of the peeling unit 13, the presence or absence of deformation of the die plate DP, and the amount of deformation are recorded in the storage device. Thereby, the correlation (second correlation data) between the adsorption force in the peeling unit 13 and the amount of deformation of the die plate DP is obtained.

[0057] (Obtaining the deformation amount of the die plate at the adsorption force without die deformation, etc.: Step S23) Step S23 will be described with reference to FIGS. 13(a) and 13(b). FIG. 13(a) is a conceptual diagram for explaining the deformation of the die plate. FIG. 13(b) is a conceptual diagram for explaining the deformation with the die.

[0058] The deformation amount of the die plate DP shown in FIG. 13(a) is compared with the deformation amount of the die D shown in FIG. 13(b), and the correlation (correlation data) is recorded in the storage device. In FIGS. 13(a) and 13(b), the case where the adsorption force of the peeling unit 13 is different is represented by one figure. The adsorption force on the right side is greater than that on the left side, and the amount of deformation is greater. Also, the adsorption force on the die plate DP and the adsorption force on the die D are the same. Let the deformation amount of the left die plate be δ1, the deformation amount of the right side be δ2, and the deformation amount of the left die D be δ3. Then, δ3 < δ1 < δ2. Note that the right die D is damaged. The deformation amount (δ1) of the die plate DP at the adsorption force when there is no deformation of the die D (when δ3 = 0) is obtained and recorded in the storage device as a predetermined value.

[0059] Next, with reference to FIG. 11, a method for setting the adsorption force based on the deformation amount of the die plate newly measured in the second step using the correlation and the like obtained in the first step will be described.

[0060] (Obtaining correlation data between adsorption force and die plate deformation: Step S31) Similar to Step S22, the adsorption force of the peeling unit 13 is changed, the deformation amount of the die plate DP is measured, and the correlation data (first correlation data) between the adsorption force and the die plate deformation is obtained and recorded in the storage device.

[0061] (Obtaining the adsorption force when the die plate deformation amount is a predetermined value: Step S32) The control unit 8 obtains the adsorption force from the correlation data obtained in Step S31 so that it is equal to or less than the deformation amount (δ1) obtained in Step S22.

[0062] (Setting the adsorption force: Step S33) The control unit 8 sets the opening degree etc. of the valve 192 of the suction mechanism so that the adsorption force of the peeling unit 13 becomes the adsorption force obtained in Step S33.

[0063] Next, the measurement of the deformation amount will be described below. The deformation amount is measured, for example, by observing the surfaces of the die plate DP and the work of the die D using a laser microscope. The laser microscope irradiates a laser from a light source, the laser that has passed through the objective lens scans the observation target, and the reflected light from the observation target enters the objective lens again. Then, the laser microscope changes the path of the reflected light toward the detector with a half mirror, eliminates scattered light with a pinhole provided at the imaging position, amplifies the laser that has entered the detector, and displays a three-dimensional image. Also, in the case of confocal, since the brightness is highest in the focused state, the height of the object can be obtained. In a confocal optical system, the Z position where the brightness is maximum, that is, the brightest, represents the height information of the surface of the work. By utilizing this fact and recording the Z position when the brightness becomes maximum, it becomes possible to capture the height information of the work.

[0064] According to the embodiment, one or more of the following effects can be obtained.

[0065] (1) Adsorb a die plate in the form of a thin plate made of a material that is easily plastically deformed, such as Cu, and check (measure) the deformation of the die plate. Since a material that is easily plastically deformed is used, when a small amount of force is applied to the thin plate, the thin plate will deform relatively greatly, and it can be clearly quantified, making it easy to estimate the force applied from the amount of deformation.

[0066] (2) Record the amount of deformation obtained by measurement and the deformation and damage state of the die. Thereby, through the relationship between the adsorption force and the amount of deformation of the die plate, the amount of deformation and damage of the die can be associated.

[0067] (3) Based on the record in (2) above, set the adsorption force of the peeling unit according to the type of die. Thereby, when changing the die, only the setting of the adsorption force is required.

[0068] (4) If data is accumulated, the amount of deformation can be grasped for various types of dies, and the damage of the die can be reduced without checking the deformation on the die plate.

[0069] (5) The deformation or damage when the element is adsorbed (pushed up) can be reduced. Thereby, the number of defective products is reduced, and the manufacturing speed of the product can be improved.

[0070] (6) It becomes possible to provide a die bonding apparatus that can easily handle various elements.

[0071] <Modification Example> Hereinafter, several representative modification examples of the embodiment will be exemplified. In the description of the following modification examples, for parts having the same configuration and function as those described in the above embodiment, the same reference numerals as those in the above embodiment may be used. And for the description of such parts, within a technically non - contradictory range, the description in the above embodiment may be appropriately incorporated. Also, a part of the above embodiment and all or part of a plurality of modification examples can be appropriately and comprehensively applied within a technically non - contradictory range.

[0072] (First Modified Example) The die plate in the first modified example will be described with reference to FIGS. 14(a) and 14(b). FIG. 14(a) is a schematic diagram showing the upper surface of the die plate in the first modified example. FIG. 14(b) is a schematic diagram showing the front view of the die plate shown in FIG. 14(a).

[0073] In the embodiment, an example where the die plate DP is a plain flat plate has been described. However, in the first modified example, markings are pre-applied on the surface of the die plate DP. Here, the markings are, for example, lattice-like lines or mesh processing as shown in FIGS. 14(a) and 14(b). The deformation may be measured quantitatively by observing the markings (by imaging with an imaging device and performing image processing). For example, the picked-up die plate DP is placed on the intermediate stage 31 by the pickup head 21 and the die plate DP is imaged by the stage recognition camera 32. If the change in the markings can be confirmed during measurement, the deformation can be visualized and the presence or absence of deformation can be more easily seen. However, in the die plate DP of FIGS. 14(a) and 14(b), the air during adsorption by the collet leaks from the side surface of the die plate DP, so it is necessary to cover the processed surface with a transparent flat plate.

[0074] (Second Modified Example) The die plate in the second modified example will be described with reference to FIGS. 15(a) and 15(b). FIG. 15(a) is a schematic diagram showing the upper surface of the die plate in the second modified example. FIG. 15(b) is a schematic diagram showing the cross-section along the line B-B shown in FIG. 15(a).

[0075] In the second modified example, a part of the die plate DP is made thinner. For example, as shown in FIG. 15(b), plates are attached to both sides of a plate with holes or through-holes to form the die plate DP. By making a part of the die plate DP thinner, plastic deformation is likely to occur and it becomes easier to identify the deformation area.

[0076] (Third Modified Example) The die plate in the third modification will be described with reference to FIGS. 16(a) and 16(b). FIG. 16(a) is a schematic diagram showing the upper surface of the die plate in the third modification. FIG. 16(b) is a schematic diagram showing a cross-section taken along line B-B shown in FIG. 16(a).

[0077] The upper surface of the die plate DP is dimpled. By thinning a part of the die plate DP, plastic deformation is likely to occur, and it becomes easy to identify the deformation area. However, a flat plate may also be provided on the surface of the die plate DP at this time.

[0078] As described above, the disclosure made by the present inventor has been specifically described based on the embodiments, modifications, and examples. However, it goes without saying that the present disclosure is not limited to the above embodiments, modifications, and examples, and can be variously changed.

[0079] For example, in the embodiment, the number of a plurality of blocks has been described with four examples, but the number of blocks may be three or less or five or more according to the die size.

[0080] Also, although the plurality of blocks of the peeling unit have been described as concentric square shapes, they may be concentric circular shapes or concentric elliptical shapes, or may be configured by arranging square blocks in parallel.

[0081] Also, although an example in which the peeling unit pushes up a plurality of blocks has been described, one block may be slid.

[0082] Also, in the embodiment, the deformation and breakage of the die when picking up the die from the semiconductor wafer have been described, but the stress change may be confirmed as a confirmation item before the process that is likely to cause breakage deformation in the manufacturing stage.

[0083] Also, in the embodiment, an example using a die attach film has been described, but a preform portion for applying an adhesive to the substrate may be provided and the die attach film may not be used.

[0084] In addition, in the embodiment, an example of providing a pickup head and an intermediate stage has been described, but the present invention is not limited thereto, and it is applicable to a die bonding apparatus that picks up a die from a die supply unit. For example, it is also applicable to a die bonder that bonds a die of a die supply unit to a substrate with a bonding head without an intermediate stage and a pickup head.

[0085] 8... Control unit 10... Die bonder (die bonding apparatus) 13... Peeling unit 16... Dicing tape D... Die (workpiece) DP... Die plate (workpiece)

Claims

1. A dicing bonding apparatus comprising: a peeling unit capable of adsorbing a dicing tape to which a workpiece is attached and peeling the workpiece from the dicing tape; a control unit for controlling the peeling unit; wherein the workpiece is a die formed of a semiconductor substrate or a die plate formed of a ductile material having no yield point and having substantially the same size as the die; the control unit is configured to set an adsorption force of the peeling unit when the die is peeled based on a deformation amount of the die plate formed when the die plate is peeled by the peeling unit.

2. In the dicing bonding apparatus according to Claim 1, the control unit records first correlation data between a deformation amount of the die plate formed when the die plate is peeled by the peeling unit and an adsorption force of the peeling unit when the die plate is peeled in a storage device, and is configured to set, as the adsorption force of the peeling unit when the die is peeled, the adsorption force of the peeling unit at which the deformation amount of the die plate becomes a predetermined value based on the first correlation data.

3. In the dicing bonding apparatus according to Claim 2, the control unit records second correlation data between a deformation amount of the second die plate formed when the second die plate is peeled by the peeling unit and a deformation amount of the second die formed when the second die is peeled by the peeling unit in the storage device, and is configured to set the predetermined value based on the second correlation data.

4. In the dicing bonding apparatus according to Claim 3, the control unit records third correlation data between a deformation amount of the second die plate formed when the second die plate is peeled by the peeling unit and an adsorption force of the peeling unit when the second die plate is peeled in the storage device, records fourth correlation data between a deformation amount of the second die formed when the second die is peeled by the peeling unit and an adsorption force of the peeling unit when the second die is peeled in the storage device, and is configured to acquire the second correlation data based on the third correlation data and the fourth correlation data.

5. In the dicing bonding apparatus according to Claim 4, further comprising a suction mechanism connected to the peeling unit A head having a collet for adsorbing the workpiece and capable of moving up and down, comprising: The peeling unit has a block that contacts the dicing tape, and a dome plate that is provided outside the block and to which the dicing tape can be adsorbed, and is configured to peel the workpiece from the dicing tape by the block. A die bonding apparatus.

6. In the die bonding apparatus according to claim 5, The control unit, adsorbs the dicing tape to which the workpiece is attached through the suction port of the dome plate and the gap between the block and the dome plate, lands the collet on the workpiece by the head, adsorbs the workpiece by the collet, A die bonding apparatus configured to raise the block from the dome plate.

7. In the die bonding apparatus according to claim 4, A die bonding apparatus in which the amount of deformation of the die plate is measured using a laser microscope.

8. In the die bonding apparatus according to claim 4, A die bonding apparatus in which markings are provided on the surface of the die plate.

9. In the die bonding apparatus according to claim 4, A die bonding apparatus in which a part of the die plate is formed thinly.

10. A peeling unit capable of adsorbing a dicing tape to which a workpiece is attached and peeling the workpiece from the dicing tape, and a control unit for controlling the operation of the peeling unit. The workpiece is a die formed of a semiconductor substrate or a die plate formed of a ductile material having no yield point and having substantially the same size as the die. The control unit is configured to set the adsorption force of the peeling unit when the die is peeled based on the amount of deformation of the die plate formed when the die plate is peeled by the peeling unit. A die bonding apparatus, a loading step of loading a wafer ring holding the dicing tape, A method for manufacturing a semiconductor device, comprising a pickup step of pushing up the die with the peeling unit and picking up the die with a collet.

Images