Processing Apparatus and Processing Method for Solid Structures

Abstract

To provide a processing device and a processing method of a solid structure.SOLUTION: A processing device and a processing method of a solid structure are used in executing a processing procedure on a solid structure. The processing device of the solid structure provides energy to the solid structure by various electromagnetic radiation sources, generates qualitative changes or defects in the solid structure, in other words, forms a modified layer. Stress and / or hardness of the modified layer is different from other non-processed regions.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a processing apparatus and a processing method, and particularly to a processing apparatus and a processing method for a solid structure.

Background Art

[0002] In recent years, with the continuous development of semiconductor technology, scientific and technological products have made great progress. In semiconductor processes, processing steps such as cutting, grinding, or polishing are often performed on materials such as wafers using processing elements. Semiconductor materials such as silicon carbide (SiC) have advantages such as a wide energy bandgap, high hardness, high thermal conductivity, and chemical inertness, and thus are ideal materials for manufacturing high-temperature electronic components and high-frequency high-power elements. However, due to the high hardness of semiconductor materials, it is difficult to perform processing steps such as slicing, grinding, or polishing, and cutting tools such as processing elements also wear out. Therefore, how to improve the processing efficiency and quality of semiconductor materials through modification has become one of the important research and development topics at present.

Summary of the Invention

Problems to be Solved by the Invention

[0003] In view of this, one or more objects of the present invention are to provide a processing apparatus and a processing method for a solid structure in order to solve the problems of the above prior art.

Means for Solving the Problems

[0004] To achieve the one or more above-mentioned objects, the present invention provides a processing apparatus for a solid structure for executing a processing procedure, including a laser source for providing laser energy to a processing target region of the solid structure in a modification step of the processing procedure, and a microwave or high-frequency source for providing microwave or high-frequency energy to the solid structure in the modification step of the processing procedure. The processing target region of the solid structure forms a modified layer by generating qualitative changes or defects by the laser energy and the microwave or high-frequency energy in the modification step of the processing procedure. The laser source provides the laser energy by generating at least one pulsed light, and the microwave or high-frequency source provides the microwave or high-frequency energy by continuously or intermittently generating electromagnetic waves. A processing apparatus for a solid structure is provided, which is characterized by the above.

[0005] According to the processing apparatus for a solid structure according to the present invention, it further includes a heat source for heating the solid structure in the modification step of the processing procedure.

[0006] According to the processing apparatus for a solid structure according to the present invention, the heat source is the laser source, the microwave or high-frequency source, a heating liquid tank, another laser source, another microwave or high-frequency source, and / or an infrared light source.

[0007] According to the processing apparatus for a solid structure according to the present invention, the solid structure is immersed in a liquid.

[0008] According to the processing apparatus for a solid structure according to the present invention, it further includes a detection and control unit for detecting the formation state of the modified layer of the solid structure in a detection and control step of the processing procedure, and further performing feedback control on the laser energy provided by the laser source and / or the microwave or high-frequency energy provided by the microwave or high-frequency source.

[0009] According to the solid structure processing apparatus of the present invention, the laser source adjusts the laser energy to be provided according to the microwave or high-frequency energy provided by the microwave or high-frequency source.

[0010] According to the solid structure processing apparatus of the present invention, the microwave or high-frequency source adjusts the microwave or high-frequency energy to be provided according to the laser energy provided by the laser source.

[0011] According to the solid structure processing apparatus of the present invention, the laser source and the microwave or high-frequency source provide the laser energy and the microwave or high-frequency energy respectively in sequence or simultaneously so as to form the modified layer in the processing target area of the solid structure.

[0012] According to the solid structure processing apparatus of the present invention, the laser source adjusts the depth of the solid structure irradiated by the focusing point of the pulsed light generated by the laser source according to the form of the solid structure.

[0013] According to the solid structure processing apparatus of the present invention, the at least one pulsed light of the laser source is single or multiple pulsed lights that form a plurality of focusing points and irradiate the processing target area of the solid structure.

[0014] According to the solid structure processing apparatus of the present invention, the at least one pulsed light of the laser source irradiates the processing target area of the solid structure with a plurality of pulsed lights of different wavelengths.

[0015] According to the solid structure processing apparatus of the present invention, the direction in which the microwave or high-frequency source provides the microwave or high-frequency energy to the solid structure is the same as the direction in which the laser source provides the laser energy to the solid structure.

[0016] According to the processing apparatus for a solid structure according to the present invention, the direction in which the microwave or high-frequency source provides the microwave or high-frequency energy to the solid structure is different from the direction in which the laser source provides the laser energy to the solid structure.

[0017] To achieve the one or more objectives, the present invention provides a method for processing a solid structure for executing a processing procedure, including a step of executing a modification step, the modification step including providing laser energy to a processing target region of the solid structure by a laser source and providing microwave or high-frequency energy to the solid structure by a microwave or high-frequency source, wherein the processing target region of the solid structure generates qualitative changes or defects by the laser energy and the microwave or high-frequency energy to form a modified layer.

[0018] According to the method for processing a solid structure according to the present invention, the method further includes a step of executing a heating step of heating the solid structure using a heat source during or after the execution of the modification step.

[0019] According to the method for processing a solid structure according to the present invention, the hardness or stress of the modified layer of the solid structure is different from other regions of the solid structure.

[0020] According to the method for processing a solid structure according to the present invention, after the execution of the modification step, the method further includes a step of executing a subsequent step on the solid structure, and the subsequent step is selected from the group consisting of division, thinning, polishing, coating, vapor deposition, yellow light irradiation, photolithography, etching, and diffusion.

[0021] According to the method for processing a solid structure according to the present invention, the processing target region is located at the depth or surface of the solid structure.

[0022] According to the method for processing a solid structure according to the present invention, the processing target region is located in a partial region of the solid structure.

[0023] According to the method for processing a solid structure according to the present invention, the laser source adjusts the laser energy provided to modify the processing target region in response to the microwave or high-frequency energy provided by the microwave or high-frequency source, or the microwave or high-frequency source adjusts the microwave or high-frequency energy provided to heat the processing target region in response to the laser energy provided by the laser source.

Effects of the Invention

[0024] As described above, the processing apparatus and processing method for a solid structure according to the present invention have one or more of the following advantages.

[0025] (1) The present invention uses various electromagnetic radiation sources in the modification step to cause qualitative changes or defects in the processing target region of the solid structure, thereby generating a stress difference with other regions.

[0026] (2) The present invention uses the pulsed light of the laser source in the modification step to form hot spots in the processing target region of the solid structure, thereby causing qualitative changes or modification phenomena such as weakening of atomic bonds, weakening of the structure, or conversion from a single crystal form to a polycrystalline form or an amorphous form, or defects in the processing target region of the solid structure. The present invention simultaneously uses a microwave or high-frequency source in the modification step to provide microwave or high-frequency energy to the solid structure. The processing target region of the solid structure generates free electrons by providing laser energy. The generation of the free electrons can absorb more microwave energy than other regions (non-processing target regions), thereby increasing the temperature of the processing target region. Furthermore, because the temperature increases, the processing target region absorbs more laser energy to generate more free electrons, and absorbs more electromagnetic energy provided by the microwave or high-frequency radiation source, thereby contributing to the formation of a positive cycle.

[0027] (3) The present invention can heat a solid structure by a heat source in a modification step to increase the temperature of the solid structure, and by increasing the temperature, the absorption rate of the energy of the radiation source can be improved.

[0028] (4) The present invention detects the formation state of the modified layer of the solid structure in a detection and control step, and further performs feedback control on the laser energy provided by a laser source and / or the microwave or high-frequency energy provided by a microwave or high-frequency source, for example, controls the magnitude, frequency, or processing feed rate of the microwave or high-frequency energy provided by the microwave or high-frequency source.

[0029] To deepen the understanding of the technical features and achievable technical effects of the present invention, better embodiments and detailed descriptions are shown below.

Brief Description of the Drawings

[0030]

Figure 1

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Figure 9a

Figure 9b

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Mode for Carrying Out the Invention

[0031] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The ratio of each member in the drawings of the embodiments of the present invention is shown for easy understanding of the description and is not the actual ratio. Also, the ratio of the dimensions of the assembly shown in the figure is for explaining each component and its structure, and of course, the present invention is not limited thereto. On the other hand, for convenience of understanding, the same components in the following embodiments will be described with the same reference numerals.

[0032] Furthermore, the terms used throughout the specification and in the claims for utility model registration have the ordinary meanings usually used in this field, in the content disclosed in this specification, and in the special content, unless otherwise specified. Some of the terms used to describe the present invention are described below or elsewhere in this specification to provide additional guidance to those skilled in the art regarding the description of the present invention.

[0033] The use of "first", "second", "third", etc. in this article does not specifically indicate order or sequence and is not used to limit the present invention. This is only used to distinguish components or operations described with the same technical term.

[0034] Next, when terms such as "include", "comprise", "have", and "contain" are used in this article, they are all open terms. That is, they mean including but not limited to this.

[0035] The present invention provides a processing apparatus and a processing method for a solid structure. The processing apparatus and the processing method are used to execute a processing procedure on a solid structure to be processed (i.e., an object to be processed), and can be applied to many semiconductor processes such as, for example, an SOI (semiconductor on insulator) process, an ingot slicing process, a wafer thinning process, or a packaging process, but are not limited thereto. The solid structure is a solid object containing a semiconductor material in the semiconductor process, such as, for example, a crystal structure such as a wafer or an ingot, but is not limited thereto. The semiconductor material is, for example, a substrate material such as Si, SiC, SiGe, Ge, GaAs, GaN, or InP, but is not limited thereto, and the crystal structure is, for example, a single crystal, polycrystal, or amorphous structure, but is not limited thereto. The processing procedure executed by the processing method of the present invention includes at least a step of executing a modification step of forming a modified layer in a processing target region of the solid structure.

[0036] As shown in FIG. 1, in the modification step S10 of the processing procedure of the present invention, the processing apparatus for the solid structure of the present invention provides various electromagnetic energies to the processing target region of the solid structure by various electromagnetic radiation sources. These electromagnetic energies function as modification energies to cause qualitative changes or defects in the processing target region of the solid structure, that is, to form a modified layer. For example, the present invention can provide two types of electromagnetic energies to the processing target region of the solid structure using two types of electromagnetic radiation sources so as to cause qualitative changes or defects in the processing target region of the solid structure to form a modified layer.

[0037] As shown in FIGS. 2 to 4, taking the example that the solid structure 100 is a wafer, the wafer is defined such that the processing target region 110 is located in the radial section or axial section of the wafer, and this radial section or axial section may be located, for example, at any depth or surface of the wafer. The solid structure 100 is placed, for example, on the placement stage 150, and this placement stage 150 is, for example, a movable placement stage, but is not limited thereto. Also, the processing procedure of the solid structure 100 is not limited to being executed in a chamber such as the heating liquid tank 80 (shown in FIG. 7) or not being executed in a chamber such as the heating liquid tank (shown in FIG. 6). The first type of electromagnetic radiation source among the above two types of electromagnetic radiation sources provides the first type of electromagnetic energy to the processing target region 110 of the solid structure 100, causing qualitative changes such as weakening of atomic bonds, weakening of the structure, or conversion from single crystal form to polycrystalline form or amorphous form, or modification phenomena such as defects in the processing target region 110 of the solid structure 100, that is, forming the modified layer 120. The thickness of the solid structure 100 is, for example, in the range of about 50 μm to about 1,800 μm, but is not limited thereto. The processing target region 110 is located, for example, at the depth X or the surface of the solid structure 100. The area, thickness, distribution direction, and distribution method of the modified layer 120 formed in the present invention occupying the solid structure 100 are not particularly limited and may be determined, for example, according to actual process requirements. When the solid structure 100 is an ingot, the range of its thickness is, for example, greater than 800 μm, but is not limited thereto.

[0038] The first type of electromagnetic radiation source used in the present invention is, for example, a laser source 20 that generates pulsed light having laser energy in the modification step S10 of the above processing procedure to irradiate the processing target region 110 of the solid structure 100. Taking the thickness of the solid structure 100 being 1,800 μm as an example, the depth X of the processing target region 110 may be between about 0 μm and about 1,800 μm. The laser source 20 generates pulsed light 23 by a laser generator 22, and this pulsed light 23 is transmitted to the solid structure 100 through a lens group 24. The pulsed light 23 of the laser source 20 forms a non-linear absorption effect and a thermal effect at the focal point to form a hot spot. Therefore, the solid structure 100 at the focal point is ionized to generate free electrons, and the energy of the free electrons is also transmitted to the solid structure 100 at the focal point, increasing the temperature of the solid structure 100 at the focal point, that is, increasing the absorption coefficient at the focal point, absorbing more laser energy provided by the laser source 20, and further improving the modification effect. Therefore, when the focal point of the pulsed light 23 generated by the laser source 20 is focused on the processing target region 110 of the solid structure 100, laser energy is provided to the processing target region 110 of this solid structure 100, causing qualitative changes such as weakening of atomic bonds, weakening of the structure, or conversion from a single crystal form to a polycrystalline form or an amorphous form, or modification phenomena such as defects.

[0039] Among the above two types of electromagnetic radiation sources, the second type of electromagnetic radiation source provides the second type of electromagnetic energy to the processing target region 110 of the solid structure 100. The first type of electromagnetic energy provided by the first type of electromagnetic radiation source can generate free electrons in the processing target region 110 of the solid structure 100. The generation of the free electrons contributes to increasing the temperature of the processing target region 110 by absorbing the second type of electromagnetic energy provided by the second type of electromagnetic radiation source. The increase in temperature contributes to the processing target region 110 absorbing more of the first type of electromagnetic energy to generate more free electrons, absorbing more of the second type of electromagnetic energy provided by the second type of electromagnetic radiation source, and further forming a positive cycle.

[0040] In the present invention, the second type of electromagnetic radiation source is, for example, a microwave or high-frequency source 30 that provides microwave or high-frequency energy to the solid structure 100 by continuously or intermittently generating electromagnetic waves in the modification step S10 of the above processing procedure. Taking the case where the second type of electromagnetic radiation source is a microwave source as an example, the microwave or high-frequency source 30 generates microwaves 33 by a microwave generator 32 (such as a magnetron) and transmits them to the solid structure 100 through a coaxial resonator 34. An isolator 36 is preferably provided between the microwave generator 32 and the coaxial resonator 34 and has a one-way transmission effect for microwaves. A matcher 38 is preferably provided in the microwave transmission path (such as the coaxial resonator 34) and can reduce the amount of microwave reflection, so that the microwaves can effectively enter the coaxial resonator 34 and be transmitted to the solid structure 100. The matcher 38 is composed of, for example, a coaxial tube 38a, a metal plate 38b, and a metal rod 38c. However, the structure of the above microwave or high-frequency source 30 does not limit the present invention and is only a preferred example. Compared with ultraviolet light or infrared light, the microwaves provided by the microwave source used in the present invention can penetrate the solid structure 100 such as a wafer / ingot. The microwaves can vibrate the bonds between the atoms (such as silicon atoms) of the wafer / ingot, and the bonds move back and forth to generate internal frictional heat, so that the inside and outside of the wafer / ingot material are heated and heated simultaneously to generate more free electrons. The microwaves have a wavelength in the range of about 1 mm to about 1 m and a frequency in the range of about 300 GHz to about 0.3 GHz. The output mode of the microwaves may be a continuous microwave source or an intermittent microwave source with a pulse width in the range of about 1 μs to about 1 ms. The laser energy provided by the above laser source 20 and the microwave or high-frequency energy provided by the above microwave or high-frequency source 30 can generate phenomena such as qualitative changes or defects in the processing target area 110 of the solid structure 100 to form a modified layer 120.

[0041] In addition, the processing target region 110 of the solid structure 100 (i.e., the location where the modified layer 120 is located) has more free electrons at the focal point of the pulsed light from the laser source 20 than other regions (non-processing target regions) of the solid structure 100. The generation of the free electrons can absorb more microwave energy than other regions (non-processing target regions), raise the temperature of the processing target region 110, and the increase in temperature means that the processing target region 110 can absorb more first-kind electromagnetic energy to generate more free electrons, absorb more second-kind electromagnetic energy provided by the second-kind electromagnetic radiation source, and further contribute to forming a positive cycle, thereby generating a large thermal difference from other non-processing target regions. Accordingly, correspondingly, the differences in properties such as stress and / or hardness are further increased so as to effectively modify the processing target region 110 of the solid structure 100. The above temperature can be detected, for example, by a temperature sensor 92 (such as an infrared temperature sensor). During the execution of the modification step S10, since the processing target region 110 of the solid structure 100 can absorb laser energy and microwave energy to generate a thermal effect, the hardness of the processing target region 110 of the solid structure 100 may be lower than that of other non-processing target regions.

[0042] Moreover, the direction in which the microwave or high-frequency source 30 of the present invention provides a microwave or high-frequency electromagnetic wave having microwave or high-frequency energy is not particularly limited. The microwave or high-frequency source 30 can provide a microwave or high-frequency electromagnetic wave from a direction different from the direction in which the laser source 20 provides laser energy to the solid structure 100 (the opposite side shown in FIG. 2), the same direction (the same side shown in FIG. 3), or a perpendicular direction (shown in FIGS. 4 and 8). In the present invention, a dual microwave or high-frequency source can be used to provide microwave or high-frequency energy. As shown in FIGS. 4 and 8, two sets of microwave or high-frequency sources 30 share the same coaxial resonator 34 and are respectively provided on the left and right sides of the solid structure 100, and provide microwave or high-frequency energy in a direction perpendicular to the direction in which the laser source 20 provides laser energy. The coaxial resonator 34 shown in FIGS. 4 and 8 has an opening 35 more selectively, so that the placement stage 150 can feed the area to be processed on the solid structure 100 into the coaxial resonator 34 using this opening 35. The coaxial resonator 34 may be made of, for example, a transparent or opaque material. In addition to the opposite side direction, the same side direction, and the perpendicular direction, the direction in which the microwave or high-frequency source 30 provides microwave or high-frequency energy and the direction in which the laser source provides laser energy may form an included angle, and this included angle ranges from about 0 degrees to about 180 degrees. Also, the direction in which the microwave or high-frequency source 30 provides microwave or high-frequency electrical energy is adjustable. For example, according to the surface form or composition of the solid structure 100, the direction in which the microwave or high-frequency source 30 provides microwave or high-frequency energy, the direction in which the laser source provides laser energy, and / or the included angle are adjusted.

[0043] Also, the pulsed light provided by the laser source 20 scans, for example, along the direction of a radial section or an axial section to provide energy to the solid structure 100. The direction of the qualitative change or defect formation of the solid structure 100 is a direction parallel to the radial section or the axial section. The scanning path when the pulsed light scans along the direction of the radial section or the axial section is not particularly limited, and as long as the laser energy can be provided to the processing target region 110 of the solid structure 100, it can be applied to the present invention. Since microwaves or high-frequency electromagnetic waves can penetrate the solid structure 100 such as a wafer / ingot, the microwave or high-frequency source 30 can provide microwaves or high-frequency electromagnetic waves from a direction parallel to the radial section or the axial section, a direction perpendicular to the radial section or the axial section, or other directions. For the solid structure 100, only the processing target region 110 of the solid structure 100 where qualitative changes or defects occur due to the energy provided by the laser source 20 absorbs more microwave or high-frequency energy than the non-processing target region 110. Regardless of the direction from which the microwave or high-frequency source 30 provides microwaves or high-frequency electromagnetic waves, an absorption element 40 is provided on the opposite side to avoid unnecessary scattering and improve the uniformity of absorption (shown in FIG. 2). Since the installation methods of the laser source 20 and the microwave or high-frequency source 30 and their operating principles are known to those skilled in the art, detailed descriptions are omitted in the present invention.

[0044] The power of the microwave or high-frequency source 30 of the present invention is, for example, in the range of about 200 watts to about 5,000 watts, and the laser energy output by the laser source 20 of the present invention is not limited to being higher than, lower than, or equal to the microwave or high-frequency energy output by the microwave or high-frequency source 30. The laser source 20 of the present invention can adjust the laser energy provided to modify the processing target region 110 according to, for example, the microwave or high-frequency energy provided by the microwave or high-frequency source 30, but is not limited thereto. The microwave or high-frequency source 30 can adjust the microwave or high-frequency energy provided to heat the processing target region 110 of the solid structure 100 according to, for example, the laser energy provided by the laser source 20, but is not limited thereto. As long as the modified layer 120 can be formed in the processing target region 110 of the solid structure 100, it can be applied to the present invention. According to the effect of the positive cycle, for example, when the microwave or high-frequency energy provided by the microwave or high-frequency source 30 to the processing target region 110 of the solid structure 100 is increased, the laser source 20 can correspondingly reduce the laser energy provided to the processing target region 110 of the solid structure 100. Or, when the laser energy provided by the laser source 20 to the processing target region 110 of the solid structure 100 is kept constant, the microwave or high-frequency source 30 reduces or increases the microwave or high-frequency energy provided to the processing target region 110 of the solid structure 100 to achieve the effect of the positive cycle.

[0045] Further, the laser source 20 of the present invention provides laser energy by generating pulsed light, and the microwave or high-frequency source 30 provides microwave or high-frequency energy by continuously or intermittently generating electromagnetic waves. Thereby, the laser source 20 and the microwave or high-frequency source 30 of the present invention output pulsed light and microwave or high-frequency electromagnetic waves in sequence or simultaneously to provide laser energy and microwave or high-frequency energy so as to form a modified layer 120 in the processing target region 110 of the solid structure 100. FIG. 5 is a schematic diagram of the output frequencies of the laser energy and the microwave (or high-frequency) energy of the present invention. As shown in FIG. 5, the laser source 20 provides laser energy with pulsed light, while the microwave or high-frequency source 30 can continuously generate microwave or high-frequency electromagnetic waves to provide microwave or high-frequency energy (shown in FIGS. 5(a), (b), and (c)), or the microwave or high-frequency source 30 can intermittently generate microwave or high-frequency electromagnetic waves to provide microwave or high-frequency energy (shown in FIGS. 5(d), (e), (f), (g), and (h)). The horizontal axis T in FIG. 5 represents time, and the vertical axis E represents pulse energy (Pulse Energy, E), representing the output frequency rather than the actual magnitude of the energy.

[0046] Next, taking as an example the case where the microwave or high-frequency source 30 intermittently generates microwaves or high-frequency electromagnetic waves, for the on-time, the microwave or high-frequency source 30 can be turned on before the laser source 20 outputs pulsed light and can be turned off after the pulsed light is turned off. The microwave or high-frequency source 30 can be turned on after the laser source 20 outputs pulsed light and can be turned off after the pulsed light is turned off. Or, the microwave or high-frequency source 30 can be turned on simultaneously with the laser source 20 outputting pulsed light and can be turned off after the pulsed light is turned off. For the output frequency, the microwaves or high-frequency electromagnetic waves output by the microwave or high-frequency source 30 may be, for example, the same as the frequency of the pulsed light output by the laser source 20 and have the same providing time. Or, the microwaves or high-frequency electromagnetic waves output by the microwave or high-frequency source 30 may be, for example, the same as the frequency of the pulsed light output by the laser source 20 and have a providing time longer than the pulse width of the laser, for example, n times longer, where n can be, for example, a positive integer or a decimal. Also, taking as an example the case where the microwave or high-frequency source 30 continuously generates microwaves or high-frequency electromagnetic waves, for the output frequency, the microwaves or high-frequency electromagnetic waves output by the microwave or high-frequency source 30 may be different from, for example, the frequency of the pulsed light output by the laser source 20, and the output frequency of the microwaves or high-frequency electromagnetic waves is lower or higher than the output frequency of the pulsed light. Or, the microwaves or high-frequency electromagnetic waves output by the microwave or high-frequency source 30 may be different from, for example, the frequency of the pulsed light output by the laser source 20, and the output frequency of the microwaves or high-frequency electromagnetic waves is n times the output frequency of the pulsed light of the laser, where n can be, for example, a positive integer or a decimal.

[0047] The laser source 20 used in the present invention is, for example, a Nd:YAG pulsed laser, a Nd:YVO4 pulsed laser, or a Ti-Sapphire pulsed laser. The pulsed light generated by the laser source 20 has a defect density of about 100 ea / mm 2 ~about 1,000,000 ea / mm 2So as to be within the range, the processing target region 110 of the solid structure 100 is scanned and irradiated, the moving speed of the pulsed light is in the range of about 10 mm / sec to about 1,000 mm / sec, the wavelength of the pulsed light is greater than about 700 nm, preferably in the range of about 700 nm to about 1,600 nm, the pulse width is less than about 1,000 ns, the repetition frequency is in the range of about 5 KHz to about 10 MHz, the pulse energy (Pulse Energy, E) is, for example, in the range of about 0.1 μJ to about 1,000 μJ, and the range of the spot diameter is, for example, in the range of about 1 μm to about 50 μm. In the present invention, for example, the solid structure 100 is horizontally moved using a movable mounting stage so that the pulsed light horizontally scans and irradiates the processing target region 110 of the solid structure 100 (for example, as shown by the horizontal double arrow C1 in FIGS. 2 or 3), or the laser source 20 can move the pulsed light horizontally (as shown by the horizontal double arrow L1 in FIGS. 2 or 4). Further, in the present invention, for example, the solid structure 100 is vertically moved using a movable mounting stage so that the pulsed light vertically scans and irradiates the processing target region 110 of the solid structure 100 (that is, the laser source is fixed in the vertical direction, but the mounting stage is movable in the vertical direction, as shown by the vertical double arrow C2 on the right side in FIGS. 2 or 3), or the laser source 20 can move the pulsed light vertically (that is, the laser source 20 is movable in the vertical direction, but the mounting stage is fixed in the vertical direction, as shown by the vertical double arrow L2 in FIGS. 2 or 4). In other words, the present invention can selectively adjust the depth of the solid structure 100 irradiated by the focal point of the pulsed light generated by the laser source 20 up and down according to the form (such as appearance) of the solid structure 100 in the processing procedure to achieve a suitable modification effect. Also, when the cross-section of the solid structure 100 is a warped shape, the present invention can form a modified layer 120 having a uniform thickness on the surface or at a depth X of the solid structure 100 along the warped shape by adjusting the focal point. The laser source of the present invention can, for example, form a single focal point with a single pulsed light to irradiate the solid structure 100.Then, in the present invention, for example, a plurality of focusing points may be formed by a single pulse of light to irradiate the solid structure 100, or, for example, a plurality of focusing points or a single focusing point may be formed by a plurality of pulses of light to irradiate the solid structure 100. The plurality of pulses of light may have the same wavelength or different wavelengths so as to be applicable to different semiconductor materials. For example, since the laser source includes pulses of light having two or more wavelengths, the wavelength of the appropriate laser source can be selected according to the solid structure having different compositions. Further, in other embodiments, the moving method by the movable mounting stage is not limited to the vertical movement or the horizontal movement of the solid structure 100, and the movable mounting stage may move the solid structure 100, for example, by rotation, inclination, or other methods, that is, as long as the position of the solid structure 100 irradiated by the focusing point of the pulse light can be adjusted, it can be applied to the present invention. Further, by adjusting the position of the solid structure 100 irradiated by the focusing point of the pulse light, the processing target region 110 of the solid structure is not limited to being completely distributed over the entire region of the solid structure, and may be distributed, for example, only in a part of the radial cross section and / or the longitudinal cross section. For example, one processing target region 110 (see FIGS. 9a and 9b) or a plurality of processing target regions 110 (see FIGS. 9c and 9d) may be located in a part of the region of the solid structure 100, and the cross-sectional shape of the processing target region 110 is not particularly limited and may be determined according to actual needs. For example, it may be U-shaped as shown in FIGS. 9a to 9d. FIG. 9b is a cross-sectional side view along the cross-section line I-I' of FIG. 9a, and FIG. 9d is a cross-sectional side view along the cross-section line II-II' of FIG. 9c.

[0048] Further, as shown in FIG. 7, the processing apparatus of the present invention further includes a heat source 70 for performing a heating step S50 of heating the solid structure 100, for example, during the execution of the modification step S10 of the above-described processing procedure. The heat source 70 is, for example, a laser source 20, a microwave or high-frequency source 30, a heating liquid tank 80, another laser source, another microwave or high-frequency source, and / or an infrared light source. The heating liquid tank 80 shown in FIG. 7 can function as the heat source, and the solid structure 100 is exemplified by a wafer. Further, the laser source 20, the microwave or high-frequency source 30 can also function as the heat source 70. Since the heating liquid tank 80 contains a liquid, the solid structure 100 is immersed in the liquid. The heating liquid tank 80 may be, for example, a heat oil tank, and has an oil 82, preferably a heat oil, more preferably a high-temperature resistant oil such as a fluorine oil. In all or part of the steps of the above-described processing procedure, the solid structure 100 can be immersed in the oil 82, so that unnecessary cracks or crack expansion caused by thermal shock can be reduced, and the thermal uniformity can be improved. Further, the heating liquid tank 80 is not limited to having the above-described oil 82, and a liquid that can be heated as a heat source can be selected and put into the tank as needed.

[0049] Further, the processing apparatus of the present invention detects, for example, the formation state of the modified layer 120 of the solid structure 100 in the detection and control step S40 of the processing procedure, and obtains, for example, the change in its photoconductive attenuation and the occurrence state of defects by detecting the amount of free electrons. Further, the laser energy provided by the laser source 20 is feedback-controlled, and / or the microwave or high-frequency energy provided by the microwave or high-frequency source 30 is feedback-controlled. For example, a detection and control unit 90 for controlling in real time the magnitude, frequency, or processing feed rate of the microwave or high-frequency energy provided by the microwave or high-frequency source 30 is further included (see FIG. 6 or FIG. 7). The above-described detection and control step S40 may be executed simultaneously, for example, during the execution of the modification step S10.

[0050] The processing procedure of the present invention may further include a step of performing one or more subsequent steps S60, and the subsequent steps S60 are selected from the group consisting of, for example, but not limited to, splitting (separation), thinning, polishing, coating, vapor deposition, yellow light irradiation, photolithography, etching, and diffusion. The subsequent step S60 may be performed, for example, after the modification step S10, or the subsequent step S60 may be performed after the heating step S50 is performed after the modification step S10.

[0051] As described above, the solid structure processing apparatus and processing method according to the present invention have one or more of the following advantages.

[0052] (1) In the modification step of the present invention, various electromagnetic radiation sources are used to generate qualitative changes or defects in the processing target area of the solid structure, thereby generating a stress difference with other areas.

[0053] (2) In the modification step of the present invention, pulsed light from a laser source is used to form hot spots in the processing target area of the solid structure, causing qualitative changes or modification phenomena such as weakening of atomic bonds, weakening of the structure, or conversion from single crystal form to polycrystalline form or amorphous form, or defects in the processing target area of the solid structure. In the modification step of the present invention, a microwave or high-frequency source is simultaneously used to provide microwave or high-frequency energy to the solid structure. The processing target area of the solid structure generates free electrons by providing laser energy. The generation of the free electrons can absorb more microwave energy than other areas (non-processing target areas), thereby increasing the temperature of the processing target area. Furthermore, since the temperature increases, the processing target area absorbs more laser energy to generate more free electrons, absorbing more electromagnetic energy provided by the microwave or high-frequency radiation source, thereby contributing to the formation of a positive cycle.

[0054] (3) In the modification step of the present invention, the solid structure can be heated by a heat source to increase the temperature of the solid structure, and the absorption rate of the energy of the radiation source can be improved by increasing the temperature.

[0055] (4) The present invention detects the formation state of the modified layer of the solid structure in the detection and control step, and further performs feedback control on the laser energy provided by the laser source, and / or performs feedback control on the microwave or high-frequency energy provided by the microwave or high-frequency source. For example, it controls the magnitude, frequency, or processing feed rate of the microwave or high-frequency energy provided by the microwave or high-frequency source.

[0056] The above description is only illustrative and not restrictive. Any equivalent modifications or changes made without departing from the spirit and scope of the present invention are included in the scope of the appended claims.

Description of Reference Numerals

[0057] S10: Modification Step S40: Detection and Control Step S50: Heating Step S60: Subsequent Step 20: Laser Source 22: Laser Generator 23: Pulse Light 24: Lens Group 30: Microwave or High-Frequency Source 32: Microwave Generator 33: Microwave 34: Coaxial Resonator 35: Aperture 36: Isolator 38: Matching Device 38a: Coaxial Tube 38b: Metal Plate 38c: Metal Rod 40: Absorbing Element 70: Heat Source 80: Heating Liquid Tank 82: Oil 90: Detection and Control Unit 92: Temperature Sensor 100: Solid Structure 110: Processing Target Region 120: Modified Layer 150: Mounting stage X: Depth L1: Double arrow in the horizontal direction L2: Double arrow in the vertical direction C1: Double arrow in the horizontal direction C2: Double arrow in the vertical direction I-I’, II-II’: Section lines

Claims

1. 1. A solid-state processing device for performing a processing procedure, comprising: a laser source for providing laser energy to a processing target area of ​​the solid structure in a modification step of the processing sequence; a microwave or radio frequency source for providing microwave or radio frequency energy to both the area to be processed and other areas of the solid structure during the modification step of the processing procedure; the area to be machined of the solid structure is irradiated with the laser energy and absorbs more of the microwave or radio frequency energy provided by the microwave or radio frequency source than the other areas of the solid structure; The processing target area of ​​the solid structure is subjected to a qualitative change or defect generation by the laser energy and the microwave or high frequency energy to form a modified layer, the laser source provides the laser energy by generating at least one pulsed light, and the microwave or high frequency source provides the microwave or high frequency energy by continuously or intermittently generating electromagnetic waves; the microwave or radio frequency source comprises a microwave generator and a coaxial resonator, the microwave generator generating microwaves which enter the solid structure through an opening in the coaxial resonator, thereby transmitting the microwaves through the coaxial resonator to the solid structure; The laser source is capable of adjusting the laser energy in response to the microwave or radio frequency energy provided by the microwave or radio frequency source by utilizing the effect of a positive cycle in which absorption of the laser energy increases the absorption of the microwave or radio frequency in the area to be processed, and absorption of the microwave or radio frequency increases the absorption of the laser energy in the area to be processed; 11. An apparatus for processing solid structures, comprising: a microwave or radio frequency source capable of adjusting the microwave or radio frequency energy in response to the laser energy provided by the laser source, utilizing the effect of the positive cycle.

2. The apparatus for processing a solid structure according to claim 1 , further comprising a heat source for heating said solid structure during said modification step of said processing sequence.

3. 3. The apparatus for processing solid structures according to claim 2, wherein the heat source is the laser source, the microwave or radio frequency source, a heated liquid tank, another laser source, another microwave or radio frequency source, and / or an infrared light source.

4. The apparatus for processing a solid structure according to claim 1 , 2 or 3 , wherein the solid structure is immersed in a heatable liquid.

5. 2. The apparatus for processing a solid structure according to claim 1, further comprising a detection and control unit for detecting a formation state of the modified layer of the solid structure in the detection and control step of the processing procedure, and further for feedback-controlling the laser energy provided by the laser source and / or feedback-controlling the microwave or high frequency energy provided by the microwave or high frequency source.

6. The apparatus for processing a solid structure according to claim 1 , wherein the laser source and the microwave or high frequency source provide the laser energy and the microwave or high frequency energy, respectively, in sequence or simultaneously, so as to form the modified layer in the processing target area of ​​the solid structure.

7. The apparatus for processing a solid structure according to claim 1 , wherein the laser source adjusts a depth of the solid structure irradiated by a focal point of the pulsed light generated by the laser source in accordance with a shape of the solid structure.

8. The apparatus for processing a solid structure according to claim 1 , wherein the at least one pulsed light of the laser source is a single or multiple pulsed light that forms multiple focal points and irradiates the processing target area of ​​the solid structure.

9. The apparatus for processing a solid structure according to claim 1 , wherein the at least one pulsed light of the laser source irradiates the processing target area of ​​the solid structure with a plurality of pulsed lights of different wavelengths.

10. 2. The apparatus for processing a solid structure according to claim 1, wherein the direction in which the microwave or radio frequency source provides the microwave or radio frequency energy to the solid structure is the same as the direction in which the laser source provides the laser energy to the solid structure.

11. 2. The apparatus for processing a solid structure according to claim 1, wherein a direction in which the microwave or radio frequency source provides the microwave or radio frequency energy to the solid structure is different from a direction in which the laser source provides the laser energy to the solid structure.

12. 1. A method for processing a solid structure for performing a processing procedure, comprising the steps of: performing a modification step, the modification step including providing laser energy by a laser source to a region of the solid structure to be processed and providing microwave or radio frequency energy by a microwave or radio frequency source to both the region to be processed and other regions of the solid structure; the area to be machined of the solid structure is irradiated with the laser energy and absorbs more of the microwave or radio frequency energy provided by the microwave or radio frequency source than the other areas of the solid structure; The processing target area of ​​the solid structure is subjected to a qualitative change or defect generation by the laser energy and the microwave or radio frequency energy to form a modified layer; the microwave or radio frequency source comprises a microwave generator and a coaxial resonator, the microwave generator generating microwaves which enter the solid structure through an opening in the coaxial resonator, thereby transmitting the microwaves through the coaxial resonator to the solid structure; The method for processing a solid structure, characterized in that the laser source adjusts the laser energy in response to the microwave or high frequency energy provided by the microwave or high frequency source by utilizing the effect of a positive cycle in which absorption of the laser energy increases the amount of absorption of the microwave or high frequency in the area to be processed and absorption of the microwave or high frequency increases the amount of absorption of the laser energy in the area to be processed, or the microwave or high frequency source adjusts the microwave or high frequency energy in response to the laser energy provided by the laser source by utilizing the effect of the positive cycle.

13. The method for fabricating a solid structure according to claim 12, further comprising the step of performing a heating step of heating the solid structure using a heat source during or after the modification step.

14. The method for processing a solid structure according to claim 12 , wherein the modified layer of the solid structure has a different hardness or stress than the other regions of the solid structure.

15. 13. The method for processing a solid structure according to claim 12, further comprising the step of performing a subsequent step on the solid structure after performing the modifying step, the subsequent step being selected from the group consisting of splitting, thinning, polishing, coating, deposition, yellow light irradiation, photolithography, etching and diffusion.

16. The method for processing a solid structure according to claim 12 , wherein the processing target area is located at a depth or on a surface of the solid structure.

17. The method for processing a solid structure according to claim 16 , wherein the processing target area is located in a partial area of ​​the solid structure.

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