Substrate processing apparatus

Abstract

To provide a shutter mechanism and a substrate processing apparatus capable of enlarging an opening and pressing a valve body with uniform force.SOLUTION: A shutter mechanism that opens and closes an opening of a cylindrical chamber of a substrate processing apparatus includes a valve body and an elevating mechanism. The valve body has a length of more than half of the inner circumference of the chamber. The elevating mechanism is two or more elevating mechanisms connected to the lower part of the valve body to raise and lower the valve body.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a shutter mechanism and a substrate processing apparatus.

Background Art

[0002] Conventionally, a plasma processing apparatus that performs a desired plasma process on a wafer, which is a substrate to be processed for a semiconductor device, is known. The plasma processing apparatus includes, for example, a chamber that houses a wafer, and in the chamber, a mounting table that mounts the wafer and functions as a lower electrode, and an upper electrode that faces the mounting table are arranged. Further, a high-frequency power source is connected to at least one of the mounting table and the upper electrode, and the mounting table and the upper electrode apply high-frequency power to the space inside the processing chamber. In the plasma processing apparatus, the processing gas supplied to the space inside the processing chamber is turned into plasma by high-frequency power to generate ions and the like, and the generated ions and the like are guided to the wafer to perform a desired plasma process, such as an etching process, on the wafer.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a shutter mechanism and a substrate processing apparatus that can expand an opening and press a valve body with a uniform force.

Means for Solving the Problems

[0005] A shutter mechanism according to an aspect of the present disclosure is a shutter mechanism that opens and closes an opening of a cylindrical chamber of a substrate processing apparatus, and includes a valve body and a lifting mechanism. The valve body has a length of at least half of the inner circumference of the chamber. The lifting mechanism is two or more lifting mechanisms connected to the lower part of the valve body and lifting the valve body.

Advantages of the Invention

[0006] According to the present disclosure, the opening can be enlarged, and the valve body can be pressed with a uniform force.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Modes for Carrying Out the Invention

[0008] Hereinafter, embodiments of the disclosed shutter mechanism and substrate processing apparatus will be described in detail with reference to the drawings. Note that the disclosed technology is not limited by the following embodiments.

[0009] In a plasma processing apparatus, an opening for loading and unloading a semiconductor wafer is provided in a side wall of a chamber, and a gate valve for opening and closing the opening is disposed. Loading and unloading of the semiconductor wafer are performed by opening and closing the gate valve. Inside the chamber, a deposition shield for preventing adhesion of etching by-products (deposits) is provided along the inner wall of the chamber, and an opening is also provided in the deposition shield in accordance with the position of the opening of the chamber.

[0010] Since the gate valve is arranged outside the chamber (on the transfer chamber side), a space is formed where the opening protrudes toward the transfer chamber side. When the plasma generated in the chamber diffuses to the space of the opening, the uniformity of the plasma deteriorates, or the seal member of the gate valve deteriorates due to the plasma. Therefore, the openings of the chamber and the deposition shield are configured to be blocked by a shutter. Further, for example, the driving part of the shutter is arranged below the opening, and the shutter is driven to open and close by the driving part.

[0011] However, in recent years, it has been required to transfer parts inside the chamber that exceed the outer diameter of the wafer from the opening of the chamber, and an increase in the opening and an increase in the size of the valve body of the shutter have been required. However, when the size of the valve body of the shutter is increased, the contact area with the deposition shield against which the valve body is pressed increases, and there may be a case where sufficient conduction between the valve body and the deposition shield cannot be ensured. Therefore, it is expected that the opening can be enlarged and the valve body can be pressed with a uniform force.

[0012] [Configuration of Substrate Processing Apparatus] FIG. 1 is a diagram showing an example of a substrate processing apparatus according to an embodiment of the present disclosure. In the following, the case where the substrate processing apparatus is a plasma processing apparatus will be described as an example, but the present disclosure is not limited thereto, and any substrate processing apparatus having a shutter member may be used.

[0013] In FIG. 1, the plasma processing apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus, and includes, for example, a cylindrical chamber (processing chamber) 10 made of aluminum whose surface is anodized (anodic oxidation treatment). The chamber 10 is grounded for safety. However, the present disclosure is not limited thereto, and the plasma processing apparatus 1 is not limited to a capacitively coupled parallel plate plasma etching apparatus, and may be any type of plasma processing apparatus such as an inductively coupled plasma (ICP), a microwave plasma, or a magnetron plasma.

[0014] At the bottom of the chamber 10, a columnar susceptor support base 12 is disposed via an insulating plate 11 made of ceramic or the like, and on this susceptor support base 12, a susceptor 13 made of a conductive material such as aluminum is disposed. The susceptor 13 has a configuration that functions as a lower electrode, and a substrate to be subjected to an etching process, for example, a wafer W which is a semiconductor wafer, is placed thereon.

[0015] On the upper surface of the susceptor 13, an electrostatic chuck (ESC) 14 for holding the wafer W by an electrostatic adsorption force is disposed. The electrostatic chuck 14 is composed of an electrode plate 15 made of a conductive film and a pair of insulating layers that sandwich the electrode plate 15, for example, made of a dielectric such as Y2O3, Al2O3, AlN, etc. A DC power supply 16 is electrically connected to the electrode plate 15 via a connection terminal. This electrostatic chuck 14 adsorbs and holds the wafer W by a Coulomb force or a Johnsen-Rahbek force caused by a DC voltage applied by the DC power supply 16.

[0016] Also, on the portion of the upper surface of the electrostatic chuck 14 where the wafer W is adsorbed and held, a plurality of pusher pins (for example, three) as lift pins that can project from the upper surface of the electrostatic chuck 14 are disposed. These pusher pins are connected to a motor (not shown) via a ball screw (not shown), and project freely from the upper surface of the electrostatic chuck 14 due to the rotational motion of the motor converted into a linear motion by the ball screw. Thereby, the pusher pins penetrate through the electrostatic chuck 14 and the susceptor 13, and move up and down protruding and retracting in the inner space. When the electrostatic chuck 14 adsorbs and holds the wafer W when performing an etching process on the wafer W, the pusher pins are accommodated in the electrostatic chuck 14. When carrying out the etched wafer W from the plasma generation space S, the pusher pins project from the electrostatic chuck 14 to separate the wafer W from the electrostatic chuck 14 and lift it upward.

[0017] On the upper surface around the susceptor 13, an edge ring 17 made of, for example, silicon (Si) is arranged to improve the uniformity of etching. Around the edge ring 17, a cover ring 54 for protecting the side portion of the edge ring 17 is arranged. Further, the side surfaces of the susceptor 13 and the susceptor support base 12 are covered with a cylindrical member 18 made of, for example, quartz (SiO2).

[0018] Inside the susceptor support base 12, a refrigerant chamber 19 extending in the circumferential direction, for example, is arranged. In the refrigerant chamber 19, a refrigerant at a predetermined temperature, for example, cooling water, is circulated and supplied from an external chiller unit (not shown) via pipes 20a and 20b. The refrigerant chamber 19 controls the processing temperature of the wafer W on the susceptor 13 according to the temperature of the refrigerant.

[0019] Further, by supplying a heat transfer gas, for example, helium (He) gas, from a heat transfer gas supply mechanism (not shown) between the upper surface of the electrostatic chuck 14 and the back surface of the wafer W via a gas supply line 21, the heat transfer between the wafer W and the susceptor 13 is efficiently and uniformly controlled.

[0020] Above the susceptor 13, an upper electrode 22 is arranged so as to be parallel and opposed to the susceptor 13. Here, the space formed between the susceptor 13 and the upper electrode 22 functions as a plasma generation space S (processing chamber space). The upper electrode 22 is composed of an annular or doughnut-shaped outer upper electrode 23 arranged to face the susceptor 13 with a predetermined interval, and a disk-shaped inner upper electrode 24 arranged inside the outer upper electrode 23 in the radial direction and insulated from the outer upper electrode 23. Further, with respect to plasma generation, the outer upper electrode 23 is mainly involved, and the inner upper electrode 24 serves as an auxiliary.

[0021] An annular gap (clearance) of, for example, 0.25 to 2.0 mm is formed between the outer upper electrode 23 and the inner upper electrode 24, and a dielectric 25 made of, for example, quartz is disposed in the gap. Further, a ceramic body may be disposed in this gap instead of the dielectric 25 made of quartz. A capacitor is formed by sandwiching the dielectric 25 between the outer upper electrode 23 and the inner upper electrode 24. The capacitance C1 of the capacitor is selected or adjusted to a desired value according to the size of the gap and the dielectric constant of the dielectric 25. Further, an annular insulating shielding member 26 made of, for example, alumina (Al2O3) or yttria (Y2O3) is airtightly disposed between the outer upper electrode 23 and the side wall of the chamber 10.

[0022] The outer upper electrode 23 is preferably made of a low-resistance conductor or semiconductor with little Joule heat, such as silicon. An upper high-frequency power source 31 is electrically connected to the outer upper electrode 23 via an upper matcher 27, an upper power supply rod 28, a connector 29, and a power supply cylinder 30. The upper matcher 27 matches the load impedance with the internal (or output) impedance of the upper high-frequency power source 31, and functions such that the output impedance of the upper high-frequency power source 31 and the load impedance appear to be identical when plasma is generated in the chamber 10. Further, the output terminal of the upper matcher 27 is connected to the upper end of the upper power supply rod 28.

[0023] The power supply cylinder 30 is made of a substantially cylindrical or conical conductive plate, such as an aluminum plate or a copper plate. The lower end is continuously connected to the outer upper electrode 23 in the circumferential direction, and the upper end is electrically connected to the lower end of the upper power supply rod 28 via the connector 29. Outside the power supply cylinder 30, the side wall of the chamber 10 extends upward from the height position of the upper electrode 22 to form a cylindrical ground conductor 10a. The upper end of the cylindrical ground conductor 10a is electrically insulated from the upper power supply rod 28 by a cylindrical insulating member 69. In this configuration, in the load circuit viewed from the connector 29, a coaxial line using the power supply cylinder 30 and the outer upper electrode 23 as a waveguide is formed by the power supply cylinder 30, the outer upper electrode 23, and the ground conductor 10a.

[0024] The inner upper electrode 24 has an upper electrode plate 32 and an electrode support 33. The upper electrode plate 32 is made of a semiconductor material such as silicon or silicon carbide (SiC), and has a number of electrode plate gas vents (first gas vents) not shown in the figure. The electrode support 33 is a conductive material that detachably supports the upper electrode plate 32, and is made of, for example, aluminum with an anodized surface treatment. The upper electrode plate 32 is fastened to the electrode support 33 by bolts (not shown). The head of the bolt is protected by an annular shield ring 53 disposed below the upper electrode plate 32.

[0025] In the upper electrode plate 32, each electrode plate gas vent penetrates the upper electrode plate 32. Inside the electrode support 33, a buffer chamber into which a processing gas described later is introduced is formed. The buffer chamber consists of, for example, two buffer chambers divided by an annular partition member 43 made of an O-ring, namely, a central buffer chamber 35 and a peripheral buffer chamber 36, and the lower part is open. Below the electrode support 33, a cooling plate (hereinafter referred to as "C / P") 34 (intermediate member) that closes the lower part of the buffer chamber is disposed. The C / P 34 is made of aluminum with an anodized surface treatment and has a number of C / P gas vents (second gas vents) not shown in the figure. In the C / P 34, each C / P gas vent penetrates the C / P 34.

[0026] Also, a spacer 37 made of a semiconductor material such as silicon or silicon carbide is interposed between the upper electrode plate 32 and the C / P 34. The spacer 37 is a disc-shaped member and has a number of upper surface annular grooves formed concentrically with the disc on the surface facing the C / P 34 (hereinafter simply referred to as the "upper surface"), and a number of spacer gas vents (third gas vents) that penetrate the spacer 37 and open at the bottom of each upper surface annular groove.

[0027] The inner upper electrode 24 supplies the processing gas introduced into the buffer chamber from a processing gas supply source 38, which will be described later, to the plasma generation space S through the C / P gas vent holes of the C / P 34, the spacer gas flow paths of the spacer 37, and the electrode plate gas vent holes of the upper electrode plate 32. Here, the central buffer chamber 35, and the plurality of C / P gas vent holes, spacer gas flow paths, and electrode plate gas vent holes existing below it constitute a central shower head (processing gas supply path). Also, the peripheral buffer chamber 36, and the plurality of C / P gas vent holes, spacer gas flow paths, and electrode plate gas vent holes existing below it constitute a peripheral shower head (processing gas supply path).

[0028] Also, as shown in FIG. 1, a processing gas supply source 38 is arranged outside the chamber 10. The processing gas supply source 38 supplies the processing gas to the central buffer chamber 35 and the peripheral buffer chamber 36 at a desired flow rate ratio. Specifically, the gas supply pipe 39 from the processing gas supply source 38 branches into two branch pipes 39a and 39b midway and is connected to the central buffer chamber 35 and the peripheral buffer chamber 36 respectively. The branch pipes 39a and 39b each have a flow rate control valve 40a, 40b (flow rate control device). The conductance of the flow path from the processing gas supply source 38 to the central buffer chamber 35 and the peripheral buffer chamber 36 is set to be equal. For this reason, by adjusting the flow rate control valves 40a, 40b, the flow rate ratio of the processing gas supplied to the central buffer chamber 35 and the peripheral buffer chamber 36 can be arbitrarily adjusted. Furthermore, a mass flow controller (MFC) 41 and an on-off valve 42 are arranged in the gas supply pipe 39.

[0029] With the above configuration, the plasma processing apparatus 1 adjusts the flow rate ratio of the processing gas introduced into the central buffer chamber 35 and the peripheral buffer chamber 36, thereby arbitrarily adjusting the ratio (FC / FE) of the flow rate FC of the gas ejected from the central shower head to the flow rate FE of the gas ejected from the peripheral shower head. It should be noted that it is also possible to individually adjust the flow rate per unit area of the processing gas ejected from the central shower head and the peripheral shower head, respectively. Furthermore, by arranging two processing gas supply sources corresponding to the branch pipes 39a and 39b respectively, it is also possible to independently or separately set the gas species or gas mixing ratio of the processing gas ejected from the central shower head and the peripheral shower head, respectively. However, it is not limited thereto, and the plasma processing apparatus 1 may be such that the ratio of the flow rate FC of the gas ejected from the central shower head to the flow rate FE of the gas ejected from the peripheral shower head cannot be adjusted.

[0030] Also, an upper high-frequency power supply 31 is electrically connected to the electrode support 33 of the inner upper electrode 24 via the upper matcher 27, the upper power supply rod 28, the connector 29, and the upper power supply cylinder 44. A variable capacitor 45 capable of variably adjusting the capacitance is arranged in the middle of the upper power supply cylinder 44. In addition, a refrigerant chamber or a cooling jacket (not shown) may also be provided in the outer upper electrode 23 and the inner upper electrode 24 to control the temperature of the electrodes by the refrigerant supplied from an external chiller unit (not shown).

[0031] An exhaust port 46 is provided at the bottom of the chamber 10. An Automatic Pressure Control Valve (hereinafter referred to as "APC valve"), which is a variable butterfly valve, and a Turbo Molecular Pump (hereinafter referred to as "TMP") 49 are connected to the exhaust port 46 via an exhaust manifold 47. The APC valve 48 and the TMP 49 cooperate to reduce the pressure in the plasma generation space S in the chamber 10 to a desired degree of vacuum. Also, an annular baffle plate 50 having a plurality of vent holes is disposed so as to surround the susceptor 13 between the exhaust port 46 and the plasma generation space S, and the baffle plate 50 prevents leakage of plasma from the plasma generation space S to the exhaust port 46.

[0032] In addition, an opening 51 for loading and unloading the wafer W is provided in the outer side wall of the chamber 10, and a gate valve 52 for opening and closing the opening 51 is disposed. Inside the chamber 10, a first deposition shield 71 and a second deposition shield 72 are detachably provided along the inner wall of the chamber 10. The first deposition shield 71 is an upper member of the deposition shield and is provided above the opening 51 of the chamber 10. The second deposition shield 72 is a lower member of the deposition shield and is provided below the baffle plate 50. The lower part of the first deposition shield 71 closes the opening 51 by contacting the upper part of the valve body 81 of the shutter mechanism 80 described later. The first deposition shield 71 and the second deposition shield 72 can be configured, for example, by coating a ceramic such as Y2O3 on an aluminum material. Note that the lower part of the first deposition shield 71 is coated with a conductive material, such as stainless steel or nickel alloy, so as to be conductive to the contacting valve body 81.

[0033] The wafer W is carried in and out by opening and closing the gate valve 52. However, since the gate valve 52 is arranged outside the chamber 10 (on the transfer chamber side), a space is formed where the opening 51 protrudes toward the transfer chamber side. Therefore, the plasma generated inside the chamber 10 diffuses up to that space, resulting in deterioration of plasma uniformity and deterioration of the seal member of the gate valve 52. Therefore, by blocking the space between the first deposition shield 71 and the second deposition shield 72 with the valve body 81, the opening 51 of the chamber 10 and the plasma generation space S are blocked. Further, an elevating mechanism 82 for driving the valve body 81 is arranged, for example, below the second deposition shield 72. The valve body 81 is driven up and down by the elevating mechanism 82 to open and close the space between the first deposition shield 71 and the second deposition shield 72, that is, the opening 51. Note that the valve body 81 and the elevating mechanism 82 may be collectively referred to as a shutter mechanism 80.

[0034] In the plasma processing apparatus 1, a lower high-frequency power source (first high-frequency power source) 59 is electrically connected to a susceptor 13 as a lower electrode via a lower matcher 58. The lower matcher 58 is for matching the load impedance with the internal (or output) impedance of the lower high-frequency power source 59, and functions such that the internal impedance of the lower high-frequency power source 59 and the load impedance seemingly coincide when plasma is generated in the plasma generation space S inside the chamber 10. Further, another second lower high-frequency power source (second high-frequency power source) may be connected to the lower electrode.

[0035] In the plasma processing apparatus 1, a low-pass filter (LPF) 61 that passes the high-frequency power from the lower high-frequency power supply 59 to the ground without passing the high-frequency power from the upper high-frequency power supply 31 to the ground is electrically connected to the inner upper electrode 24. This LPF 61 is preferably composed of an LR filter or an LC filter. However, since a single conductor can impart a sufficiently large reactance to the high-frequency power from the upper high-frequency power supply 31, it is also possible to simply electrically connect a single conductor to the inner upper electrode 24 instead of an LR filter or an LC filter. On the other hand, a high-pass filter (HPF) 62 for passing the high-frequency power from the upper high-frequency power supply 31 to the ground is electrically connected to the susceptor 13.

[0036] Next, when etching is performed in the plasma processing apparatus 1, first, the gate valve 52 and the valve body 81 are opened, and the wafer W to be processed is carried into the chamber 10 and placed on the susceptor 13. Then, a processing gas, for example, a mixed gas of C4F8 gas and argon (Ar) gas, is introduced from the processing gas supply source 38 into the central buffer chamber 35 and the peripheral buffer chamber 36 at a predetermined flow rate and flow rate ratio. Further, the pressure in the plasma generation space S in the chamber 10 is set by the APC valve 48 and the TMP 49 to a value suitable for etching, for example, any value within the range of several mTorr to 1 Torr.

[0037] Furthermore, high-frequency power for plasma generation is applied by the upper high-frequency power supply 31 at a predetermined power to the upper electrodes 22 (outer upper electrode 23, inner upper electrode 24), and high-frequency power for bias is applied from the lower high-frequency power supply 59 at a predetermined power to the lower electrode of the susceptor 13. Also, a DC voltage is applied from the DC power supply 16 to the electrode plate 15 of the electrostatic chuck 14 to electrostatically adsorb the wafer W to the susceptor 13.

[0038] Then, plasma is generated in the plasma generation space S by the processing gas ejected from the shower head, and the surface of the wafer W to be processed is physically or chemically etched by the radicals and ions generated at this time.

[0039] In the plasma processing apparatus 1, by applying a high-frequency wave in a high-frequency region (a frequency region where ions cannot move) to the upper electrode 22, the plasma is densified in a preferable dissociation state. Also, a high-density plasma can be formed even under a lower pressure condition.

[0040] On the other hand, in the upper electrode 22, the outer upper electrode 23 mainly serves as a high-frequency electrode for plasma generation, and the inner upper electrode 24 serves as a secondary electrode, and the ratio of the electric field strength applied to the electrons directly below the upper electrode 22 can be adjusted by the upper high-frequency power supply 31 and the lower high-frequency power supply 59. Therefore, the spatial distribution of the ion density can be controlled in the radial direction, and the spatial characteristics of the reactive ion etching can be arbitrarily and finely controlled.

[0041] [Details of the shutter mechanism 80] FIG. 2 is a partially enlarged view showing an example of a cross section of the shutter mechanism in the present embodiment. FIG. 3 is a view showing an example of the appearance of the shutter mechanism in the present embodiment. As shown in FIGS. 2 and 3, the shutter mechanism 80 includes a valve body 81 having a length of more than half of the inner circumference of the chamber 10, and two or more elevating mechanisms 82 for elevating the valve body 81. The valve body 81 can use, for example, an annular valve body along the inner circumference of the chamber 10 as shown in FIG. 3. The valve body 81 has a conductive member 83 that contacts the first deposition shield 71 when the opening 51 is closed, and a conductive member 84 that contacts the second deposition shield 72.

[0042] The valve body 81 is formed with a substantially L-shaped cross-section using, for example, an aluminum material or the like. The surface of the valve body 81 is coated with, for example, Y2O3 or the like. A conductive member 83 is disposed at the upper end of the valve body 81. Also, a conductive member 84 is disposed at the stepped portion of the valve body 81. The conductive members 83 and 84 are also called a conductance band or a spiral, and are conductive elastic members. Further, for the conductive members 83 and 84, for example, stainless steel, nickel alloy, or the like can be used. The conductive members 83 and 84 are formed, for example, by spirally winding a strip-shaped member. Also, for the conductive members 83 and 84, for example, an obliquely wound coil spring with a U-shaped jacket may be used. That is, when the valve body 81 comes into contact with the first deposition shield 71 and the second deposition shield 72, the conductive members 83 and 84 are in a state of being crushed.

[0043] The elevating mechanism 82 has a rod, and the rod is fixed and connected to the lower part of the valve body 81 by a screw or the like. The elevating mechanism 82 moves the rod up and down by, for example, an air cylinder, a motor, or the like. When the elevating mechanism 82 uses an air cylinder, it is controlled so that the flow rate of the dry air supplied to each elevating mechanism 82 is equal. In the example of FIG. 3, three elevating mechanisms 82 are arranged at equal intervals every 120 degrees. By moving up and down each elevating mechanism 82 at the same timing and speed, the valve body 81 can be moved up and down without being bent or tilted. Also, for example, when the valve body 81 is semicircular along the inner circumference of the chamber 10, by providing the elevating mechanisms 82 at both ends, it can be moved up and down in the same manner.

[0044] In the shutter mechanism 80, the valve body 81 is pushed upward by the lifting mechanism 82 to close the opening 51, and is pulled downward by the lifting mechanism 82 to open the opening 51. When the valve body 81 closes the opening 51, the conductive members 83 and 84 disposed on the upper and lower portions of the valve body 81 are respectively in contact with the first deposition shield 71 and the second deposition shield 72, so that the valve body 81 is electrically connected to the first deposition shield 71 and the second deposition shield 72 via the conductive members 83 and 84. The first deposition shield 71 and the second deposition shield 72 are in contact with the grounded chamber 10. Therefore, the valve body 81 is grounded via the first deposition shield 71 and the second deposition shield 72 when the opening 51 is closed.

[0045] Also, in the shutter mechanism 80, since the valve body 81 corresponds to a part of the conventional deposition shield, it corresponds to a part of the state in which the conventional deposition shield is divided into a plurality of parts. The conventional deposition shield was heavy and the work during maintenance was difficult, but in this embodiment, since it is divided into the first deposition shield 71, the second deposition shield 72, and the valve body 81, the work during maintenance becomes easier.

[0046] [Appearance of Chamber 10] Figures 4 to 6 are diagrams showing an example of the appearance of the chamber in this embodiment. In Figures 4 to 6, for the sake of explanation, a state in which the susceptor 13, the upper electrode 22, the feed cylinder 30, the valve body 81, etc. are removed is shown. As shown in Figures 4 to 6, in the chamber 10, for example, three lifting mechanisms 82 are provided at equal intervals every 120 degrees. The opening 51 has a width capable of transporting not only the wafer W but also, for example, the edge ring 17 and the cover ring 54. A gate valve 52 can be connected to the outside of the opening 51. The opening 51 is closed when the annular valve body 81 moves upward.

[0047] As described above, according to this embodiment, the shutter mechanism 80 is a shutter mechanism that opens and closes the opening 51 of the cylindrical chamber 10 of the substrate processing apparatus (plasma processing apparatus 1), and includes a valve body 81 and a lifting mechanism 82. The valve body 81 has a length of at least half of the inner circumference of the chamber 10. The lifting mechanism 82 is connected to the lower part of the valve body 81 and is composed of two or more lifting mechanisms that raise and lower the valve body 81. As a result, the opening 51 can be enlarged, and the valve body 81 can be pressed against the first deposition shield 71 with a uniform force. In addition, the deviation in conduction between the valve body 81 and the first deposition shield 71 can be eliminated. Also, the load on each lifting mechanism 82 can be reduced. That is, the lifting mechanism 82 can be miniaturized.

[0048] Further, according to this embodiment, the valve body 81 is annular. As a result, the valve body 81 can be pressed against the first deposition shield 71 with a uniform force without tilting.

[0049] Further, according to this embodiment, there are three or more lifting mechanisms 82. As a result, the valve body 81 can be pressed against the first deposition shield 71 with a uniform force without tilting.

[0050] Further, according to this embodiment, the lifting mechanisms 82 are arranged at equal intervals. As a result, the valve body 81 can be pressed against the first deposition shield 71 with a uniform force without tilting.

[0051] Further, according to this embodiment, the valve body 81 has a conductive member 83 on the conduction surface that contacts the upper member (first deposition shield 71) provided along the inner wall of the upper part of the chamber 10. As a result, the deviation in conduction between the valve body 81 and the first deposition shield 71 can be eliminated.

[0052] The embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. Each of the above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and gist of the appended claims.

[0053] In addition, in the above-described embodiment, the plasma processing apparatus 1 was given as an example of a substrate processing apparatus, but the present invention is not limited thereto. For example, it can also be applied to a substrate processing apparatus that performs processing by alternately repeating a plurality of processing gases such as the atomic layer deposition (ALD) method without using plasma.

Explanation of Signs

[0054] 1 Plasma processing apparatus 10 Chamber 13 Susceptor 14 Electrostatic chuck 17 Edge ring 22 Upper electrode 51 Opening 52 Gate valve 54 Cover ring 71 First deposition shield 72 Second deposition shield 80 Shutter mechanism 81 Valve body 82 Lifting mechanism 83, 84 Conductive member W Wafer

Claims

1. A substrate processing apparatus, comprising: a cylindrical chamber having an opening formed in a side wall; a susceptor disposed in the chamber for placing a substrate to be processed thereon, with an edge ring located around an upper surface thereof, said susceptor; an annular valve body for opening and closing the opening; a first conductive member annularly disposed above the valve body; an upper member provided along an inner wall of an upper portion of the chamber and annularly disposed, having conductivity; two or more elevating mechanisms for elevating the valve body; wherein the opening has a dimension that at least allows the edge ring to pass through; when the valve body is raised, the first conductive member is in vertical contact with the upper member; a substrate processing apparatus.

2. There are three or more of the elevating mechanisms. The substrate processing apparatus according to Claim 1.

3. The elevating mechanisms are arranged at equal intervals. The substrate processing apparatus according to Claim 1 or 2.

4. The substrate to be processed is conveyed through the opening. The substrate processing apparatus according to any one of Claims 1 to 3.

5. Further comprising a cover ring located around the edge ring, wherein the opening has a dimension that allows the cover ring to be conveyed. The substrate processing apparatus according to any one of Claims 1 to 4.

6. The opening is located on the transfer chamber side. The substrate processing apparatus according to any one of Claims 1 to 5.

7. The cross section of the valve body is substantially L-shaped. The substrate processing apparatus according to any one of Claims 1 to 6.

8. The upper member has a portion coated with stainless steel or a nickel alloy. The substrate processing apparatus according to any one of Claims 1 to 7.

9. The first conductive member is a conductance band, a spiral, or a coil spring. The substrate processing apparatus according to any one of Claims 1 to 8.

10. An annular baffle provided between the chamber and the susceptor, a lower member having conductivity and located below the baffle, a second conductive member annularly provided below the valve body and in contact with the lower member; further comprising The substrate processing apparatus according to any one of Claims 1 to 9.

11. When the valve body is raised, the second conductive member is in vertical contact with the lower member. The substrate processing apparatus according to Claim 10.

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