Electronic components and devices

Abstract

To provide a technique advantageous for downsizing an electronic component 300.SOLUTION: A substrate 10 has a front surface 101 including a region 111, a back surface 102 including a region 112, and an end face 103 connecting the front surface 101 and the back surface 102. The substrate 10 has a portion 11 located between the region 111 and a region 121 and a portion 12 having a thickness smaller than that of the portion 11. An insulator part 202 of a wiring board 200 is located between imaginary plane 133 which is located between the regions 111 and 112 and the portion 12.SELECTED DRAWING: Figure 1

Description

[Technology field]

[0001] The present invention relates to an electronic component including an electronic device and a wiring board. [Background technology]

[0002] An electronic component including an electronic device includes an electronic device having a substrate, and a wiring board such as a printed wiring board, etc. At least a portion of the wiring board is disposed so as to overlap the substrate.

[0003] Patent Document 1 discloses a semiconductor image sensor that includes a photosensitive region formed on a substrate and a connection region that includes an electrical connection means to the outside of the substrate. The thickness of the part of the substrate in the connection region is made thinner than the thickness of the part of the substrate in the photosensitive region, thereby reducing the height of the semiconductor image sensor. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-050260 Summary of the Invention [Problem to be solved by the invention]

[0005] In Patent Document 1, the effect of reducing the height by varying the thickness of the substrate in different regions only corresponds to the height of the connection terminals (10), and the miniaturization of the electronic component is not sufficient.

[0006] An object of the present invention is to provide a technique that is advantageous for miniaturizing electronic components. [Means for solving the problem]

[0007] The means for solving the above problem is an electronic device having a substrate; a wiring board having a conductor portion electrically connected to the electronic device and an insulator portion supporting the conductor portion, the substrate has a front surface including a first region, a back surface including a second region, and an end surface connecting the front surface and the back surface; the substrate has a first portion located between the first region and the second region and a second portion having a thickness smaller than that of the first portion; The insulator portion of the wiring board is located between the second portion and an imaginary plane located between the first region and the second region. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a technique that is advantageous for miniaturizing electronic components. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. [Figure 2] 1A to 1C are diagrams illustrating a method for manufacturing an electronic component. [Figure 3] 1A to 1C are diagrams illustrating a method for manufacturing an electronic component. [Figure 4] 1A to 1C are diagrams illustrating a method for manufacturing an electronic component. [Figure 5] FIG. [Figure 6] FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description and drawings, common reference numerals are used to designate components common to multiple drawings. Common components may be described by mutually referring to multiple drawings without further explanation. Furthermore, descriptions of components with common reference numerals may be omitted.

[0011] Embodiments of the electronic component will be described with reference to Fig. 1. Fig. 1(a) is a schematic cross-sectional view of an electronic component 300 according to a first embodiment. Fig. 1(b) is a schematic cross-sectional view of an electronic component 300 according to a second embodiment. Fig. 1(c) is a schematic cross-sectional view of an electronic component 300 according to a third embodiment.

[0012] Electronic component 300 includes electronic device 100 having substrate 10, and wiring board 200. Wiring board 200 has conductor portion 201 electrically connected to electronic device 100 and insulator portion 202 supporting conductor portion 201. Electronic device 100 is, for example, an imaging device such as a CMOS image sensor or a CCD image sensor, or electronic device 100 is, for example, a display device such as an organic EL display or a liquid crystal display.

[0013] The wiring board 200 is typically a printed wiring board, in which a wiring pattern serving as the conductor portion 201 is printed on a rigid substrate such as a glass epoxy substrate or a composite substrate serving as the insulator portion 202. Alternatively, the wiring board 200 is a flexible wiring board in which a wiring pattern is formed on a flexible film such as polyimide serving as the insulator portion 202. The wiring board 200 may be a rigid-flexible wiring board, which is a composite of a flexible film and a rigid substrate. The wiring board 200 can supply power to the electronic device 100 from outside the electronic device 100. Furthermore, the wiring board 200 inputs signals to the electronic device 100 from outside the electronic device 100, and outputs signals from the electronic device 100 to outside the electronic device 100.

[0014] The substrate 10 has a front surface 101 including a central region 111 and a peripheral region 121, a back surface 102 including a central region 112 and a peripheral region 122, and an edge surface 103 connecting the front surface 101 and the back surface 102. The substrate 10 has a thick plate portion 11 located between the central regions 111 and 112, and a thin plate portion 12 located between the peripheral regions 121 and 122. The thickness of the thin plate portion 12 is smaller than the thickness of the thick plate portion 11.

[0015] A semiconductor element 20 is disposed in a central region 111. The electronic device 100 has a wiring structure provided on a front surface 101. The wiring structure includes an insulating film 30 and a wiring group 40. In another embodiment (not shown), a semiconductor element is disposed in a central region 112, and the electronic device 100 has a wiring structure provided on a back surface 102.

[0016] In the first embodiment (FIG. 1(a)), the peripheral region 121 of the surface 101 of the substrate 10 is recessed with respect to the central region 111, thereby forming a recess 50. The recess 50 in the first embodiment is a space sandwiched between an imaginary plane including the central region 111 and the peripheral region 121 of the surface 101 of the substrate 10.

[0017] In the second embodiment (FIG. 1(b)) and the third embodiment (FIG. 1(c)), the peripheral region 122 of the rear surface 102 of the substrate 10 is recessed relative to the central region 112, thereby forming a recess 50. The recess 50 in the second and third embodiments is a space sandwiched between an imaginary plane including the central region 112 and the peripheral region 122 of the rear surface 102 of the substrate 10.

[0018] Insulator portion 202 of wiring board 200 is located within recess 50. That is, insulator portion 202 of wiring board 200 is located between thin plate portion 12 and imaginary plane 131 located between central region 111 and central region 112. Since the thickness of wiring board 200 can be absorbed by recess 50, an increase in the thickness of electronic component 300 due to the overlap of substrate 10 and wiring board 200 can be suppressed.

[0019] In the first embodiment (FIG. 1(a)), the plane 131 is set near the central region 111 of the surface 101. Therefore, in the first embodiment, the distance between the plane 131 and the central region 111 is greater than the distance between the central region 111 and the central region 112 (the thickness of the thick plate portion 11).

[0020] In the second embodiment (FIG. 1(b)) and the third embodiment (FIG. 1(c)), the plane 131 is set near the central region 112 of the rear surface 102. Therefore, in the second and third embodiments, the distance between the plane 131 and the central region 112 is greater than the distance between the central regions 111 and 112 (the thickness of the thick plate portion 11).

[0021] It is preferable that the difference in thickness between thick plate portion 11 and thin plate portion 12 is equal to or greater than half the thickness of the portion of wiring board 200 that overlaps thin plate portion 12 in the direction perpendicular to plane 131. It is more preferable that the difference in thickness between thick plate portion 11 and thin plate portion 12 is greater than the thickness of the portion of wiring board 200 that overlaps thin plate portion 12 in the direction perpendicular to plane 131. In this way, wiring board 200 can be positioned without protruding from peripheral region 121 or peripheral region 122, or with the amount of protrusion of wiring board 200 minimized.

[0022] In the first to third embodiments, wiring board 200 extends in a direction parallel to plane 131 toward end face 103 of substrate 10, opposite thick plate portion 11. That is, in a planar view, wiring board 200 extends outside end face 103 of substrate 10. In other embodiments not shown, wiring board 200 may not extend outside end face 103 of substrate 10, but may remain only inside end face 103.

[0023] In the first to third embodiments, the thin plate portion 12 is located between at least a part of the end face 103 (the right end in FIG. 1(a)) and the thick plate portion 11. The substrate 10 is located between the thick plate portion 11 and this part of the end face 103 (the right end in FIG. 1(a)). right end ) does not have a portion whose thickness is greater than or equal to that of the thick portion 11. In other words, the substrate 10 is configured with the thin portion 12 up to the end face 103. In further other words, the recess 50 in the first embodiment is a space surrounded by an imaginary plane including the central region 111, a peripheral region 121 of the front surface 101 of the substrate 10, and an imaginary plane 133 including the end face 103. The recess 50 in the second and third embodiments is a space surrounded by an imaginary plane including the central region 112, a peripheral region 122 of the back surface 102 of the substrate 10, and an imaginary plane 133 including the end face 103.

[0024] In the first to third embodiments, wiring board 200 does not overlap thick portion 11 in a direction perpendicular to plane 131. Therefore, there is no portion of electronic component 300 whose thickness is equal to or greater than the sum of the thickness of thick portion 11 and the thickness of wiring board 200. As described above, by extending wiring board 200 outward from end face 103, there is no need for wiring board 200 to overlap thick portion 11. In other embodiments not shown, wiring board 200 may overlap thick portion 11 in a direction perpendicular to plane 131. It is preferable that the portion of electronic component 300 whose thickness is equal to or greater than the sum of the thickness of thick portion 11 and the thickness of wiring board 200 is minimized. It is preferable that the width of the portion of wiring board 200 overlapping thick portion 11 is smaller than the width of the portion of wiring board 200 overlapping thin portion 12.

[0025] In the first to third embodiments, thick plate portion 11 is formed between central region 111 and central region 112, and thin plate portion 12 is formed between peripheral region 121 and peripheral region 122. In another embodiment (not shown), thin plate portion 11 may be formed between central region 111 and central region 112, and thick plate portion 12 may be formed between peripheral region 121 and peripheral region 122. Insulator portion 202 of wiring board 200 may be disposed in recess 50 formed on thin plate portion 11.

[0026] Electronic device 100 in the first embodiment includes conductive layer 42 arranged from above central region 111 to above peripheral region 122. Wiring layer 42 includes terminal 60 connected to wiring board 200. Terminal 60 is located between thin plate portion 12 and wiring board 200 and is electrically connected to conductor portion 201 of wiring board 200. Terminal 60 is made of a metal pattern such as aluminum.

[0027] Conductor portion 201 of wiring board 200 is joined to electronic device 100 via conductive member 150 arranged between wiring board 200 and terminal 60. Conductive member 150 is, for example, an anisotropic conductive film (ACF) or a metal bump. The material of the metal bump may be an alloy such as a solder bump (solder ball).

[0028] Electronic device 100 in the second embodiment includes wiring 45 arranged across front surface 101, edge surface 103, and back surface 102. Terminal 60 is located between thin plate portion 12 and wiring board 200 and is electrically connected to conductor portion 201 of wiring board 200. Terminal 60 is a part of wiring 45.

[0029] Electronic device 100 in the third embodiment includes through vias 70 made of copper or the like that penetrate thin plate portion 12. Through vias 70 form terminals 60, and through vias 70 are electrically connected to conductor portions 201 of wiring board 200.

[0030] The electronic component 300 according to the first embodiment will now be described in further detail. As shown in FIG. 1A, the electronic component 300 includes an electronic device 100 including a substrate 10, a semiconductor element 20, an insulating film 30, a wiring group 40, and terminals 60, a conductive member 150, and a wiring board 200. The substrate 10 is configured, on its front surface 101 side, with a thick plate portion 11 on which the semiconductor element 20 is provided and a thin plate portion 12 on which the terminals 60 are provided. A recess 50 is provided on the thin plate portion 12 of the substrate 10, and the recess 50 extends to an end face of the substrate 10. A terminal 60 is disposed at the bottom of the recess 50, with the insulating film 30 on the wiring group 40 being opened. A conductive member 150 is provided on the terminal 60, and the wiring board 200 is bonded to the electronic device 100 via the conductive member 150 to form the electronic component 300. In the electronic component 300 according to the first embodiment, the bonding surface of the wiring board 200 is disposed inside the recess 50 of the substrate 10. In other words, at least a portion of the wiring board 200 is located within the recess 50 of the substrate 10. The substrate 10 is, for example, a semiconductor substrate such as silicon or an insulating substrate such as glass. The semiconductor element 20 is disposed within the semiconductor substrate 10 or on the insulating substrate 10. The semiconductor element 20 may be a semiconductor element such as a transistor, a photodiode, or a light-emitting diode, an imaging element, a light-emitting element, or a display element such as a liquid crystal display. The insulating film 30 is disposed on the semiconductor element 20 and the substrate 10 and may be composed of an insulating material such as silicon oxide or silicon nitride. The wiring group 40 is disposed within the insulating film 30 and may typically be composed of multiple conductive layers and vias between the multiple conductive layers. The wiring group 40 is composed of a metal such as copper or aluminum, and the vias are composed of a metal such as tungsten, electrically connecting the semiconductor element 20 and the wiring group 40. Although not shown here, a barrier metal composed of titanium, tantalum, or a nitride thereof may be used to prevent metal diffusion into the substrate 10. The conductive member 150 may be made of a metal material such as a solder bump such as Sn—Ag, a gold bump, or a copper bump, or a metal-organic composite material such as a conductive paste or an anisotropic conductive film.The wiring board 200 can be a rigid substrate in which a wiring pattern is formed on a glass epoxy substrate or a low-temperature co-fired ceramic substrate, or a flexible substrate in which a wiring pattern is formed on a polyimide substrate or a polyester substrate. Both can be used. Flexible substrates can be bent freely, making them suitable for electronic components used in small devices incorporating many components. Furthermore, flexible substrates are thinner than rigid substrates, making flexible substrates preferable for reducing the height of electronic components. Although not shown, a resin material is preferably provided to fill the gaps between the recess 50 of the electronic device 100 and the wiring board 200 and conductive member 150 to prevent corrosion of the joints due to moisture. The resin material can be an epoxy resin, urethane resin, acrylic resin, or other resin commonly used as an underfill. The recess 50 provided on the thin plate portion 12 of the electronic device 100, a feature of the electronic component of the present invention, will now be described in detail. A depth of the recess 50 of at least half the combined thickness of the wiring board 200 and conductive member 150 is sufficient for achieving a low profile. For example, if a flexible substrate having a thickness of 100 μm is used as wiring board 200 and an anisotropic conductive film (ACF) having a thickness of 6 μm after bonding is used as conductive member 150, recess 50 having a depth of 53 μm or more may be formed. In this manner, the thickness of electronic component 300 including substrate 10 can be reduced by 53 μm or more. More preferably, the total thickness of wiring board 200 and conductive member 150 is set to 106 μm or more. By setting the depth of recess 50 to be equal to or greater than the total thickness of wiring board 200 and conductive member 150, a structure can be achieved in which wiring board 200 does not protrude from electronic device 100. Therefore, the thickness of electronic component 300 can be controlled by the thickness of substrate 10, allowing for a sufficiently low profile.

[0031] Next, a method for manufacturing an electronic component according to the first embodiment will be described with reference to FIG. 2. FIG. 2 is a cross-sectional view showing the steps of the method for manufacturing an electronic component according to the first embodiment. Note that a known semiconductor manufacturing process can be used to manufacture the substrate. Furthermore, although not described here, heat treatment, cleaning treatment, and the like can be performed as needed between each step.

[0032] First, in the step of FIG. 2(a), a substrate 10 made of silicon, glass, or the like is prepared, and semiconductor elements 20 such as transistors, photodiodes, and light-emitting diodes are formed on a surface 101 (front surface side) of the substrate 10. An element isolation portion (not shown) such as STI (Shallow Trench Isolation) is appropriately formed in the substrate 10. The semiconductor elements 20 are formed in element portions defined by the element isolation portions, and can be electrically isolated from adjacent semiconductor elements by the element isolation portions. In this example, silicon with a thickness of 725 μm is used as the substrate 10, and multiple semiconductor elements are formed on the substrate.

[0033] In the step of FIG. 2(b), an insulating layer 31 is formed on the surface 101 of the substrate 10 on which the semiconductor element 20 has been formed. The insulating layer 31 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, or the like. A conductive layer 41 is formed on the insulating layer 31, and the conductive layer 41 and the semiconductor element 20 are electrically connected by a contact plug (not shown). The contact plug may be made of a conductive material such as tungsten. The conductive layer 41 may be made of aluminum, copper, or the like.

[0034] In the step of FIG. 2(c), a recess 50 is formed on the thin plate portion 12 of the surface 101 of the substrate 10. First, a resist mask (not shown) is formed, covering the central region of the substrate 10 and leaving the peripheral region of the substrate 10 open. Next, wet etching is performed using a hydrofluoric-nitric acid mixture, which is a mixture of hydrofluoric acid and nitric acid, to form the recess 50 to a depth of 120 μm. By forming the recess by wet etching, the edges of the recess can be tapered, making it possible to prevent the wiring portion formed in the step described below from being disconnected due to the step of the recess. Wet etching also has the advantage of having a faster etching rate, allowing the recess to be processed in a short time. After etching, the resist mask is removed by ashing.

[0035] 2(d), an insulating layer 32 is formed on the insulating layer 31, the conductive layer 41, and the recessed portion. The insulating layer 32 can be made of the same material as the insulating layer 31.

[0036] 2(e), through holes TH connected to the first conductive layer 41 are formed in the insulating layer 32, and then a second conductive layer 42 is formed on the through holes TH and the insulating layer 32. The second conductive layer 42 is electrically connected to the first conductive layer 41 by the through holes TH, and is formed to extend from the region outside the recess 50 to the bottom surface of the recess 50. The second conductive layer 42 can be made of the same metal material as the first conductive layer 41.

[0037] In the step of FIG. 2(f), an insulating layer 33 is formed to cover at least the conductive layer 42. Terminals 60 are formed by removing the insulating layer 33 from a predetermined region on the bottom of the recess 50, exposing the conductive layer 42. The insulating layer 33 can be made of the same insulating material as the insulating layers 31 and 32. For example, if silicon oxide is used for the insulating layer 33, openings can be formed in the insulating layer 33 by reactive ion etching (RIE) using a CF4 / O2 / Ar gas system to form the terminals 60. The substrate 10 is then thinned by back-grinding (not shown) until the thickness of the portion outside the recess is 400 μm (280 μm in the recess). Since the substrate itself is thinned, it is possible to reduce the height of electronic components including the substrate. While this thinning can be performed in any of the steps shown in FIGS. 2(a) to 2(e), handling of the thinned substrate becomes difficult. Therefore, in this example, the thinning process was performed in this step.

[0038] 2(g), a conductive member 150 is formed on the terminal 60. The conductive member 150 may be a gold bump, a solder bump such as Sn-Ag, a copper bump, a conductive resin, an anisotropic conductive film, or the like, but in this example, an anisotropic conductive film containing conductive particles with a particle diameter of 6 μm was used.

[0039] In the step of FIG. 2(h), the wiring board 200 is bonded to the electronic device 100 via the conductive member 150. The wiring board 200 can be any of a rigid wiring board using a substrate such as glass epoxy or a flexible wiring board using a substrate such as polyimide. In this example, a 100 μm-thick flexible wiring board is used as the wiring board 200. An anisotropic conductive film is sandwiched between the terminal 60 of the device 100 and the conductive portion 201 provided on the flexible substrate as the conductive member 150, and the substrates are electrically bonded by thermocompression bonding at 200°C for 10 seconds. After this, an underfill material made of epoxy resin is formed at the bonding interface between the substrates (not shown). If necessary, a reinforcing resin member may be provided on the wiring board in the recess 50.

[0040] As described above, in this embodiment, a recess 50 having a depth of 120 μm is formed on the thin plate portion 12, and since the thickness of the wiring board is 100 μm and the thickness of the conductive member is 6 μm, the wiring board is stored in the recess 50, and a structure can be formed in which the wiring board 200 does not protrude from the substrate 10.

[0041] In this way, the manufacture of the electronic component of the first embodiment is completed. By using the first structure of the electronic component according to the present invention, the height of the electronic component can be reduced, and as a result, the size of the device into which the electronic component is incorporated can be reduced.

[0042] The electronic component 300 according to the second embodiment will be further described. The electronic component 300 differs from the electronic component 300 according to the first embodiment in that the recess 50 provided in the electronic device 100 is on the surface (referred to as the back surface 102) opposite the element-forming surface (referred to as the front surface 101) of the electronic device 100. The wires 45 of the wiring group 40 extend from the end side surface of the electronic device 100 to the recess 50 on the back surface 102 and are bonded to the wiring board 200 in the recess on the back surface 102 of the electronic device 100 via a conductive member 150. The electronic component 300 according to the second embodiment is characterized in that, as in the first embodiment, the bonding surface (A in FIG. 3 ) of the wiring board 200 is disposed inside the recess 50 of the substrate. In other words, at least a portion of the wiring board 200 is located within the recess 50 of the substrate 10. The substrate 10, semiconductor element 20, insulating film 30, wiring group 40, terminals 60, conductive member 150, and wiring board 200 constituting the electronic device 100 can be similar to those in the first embodiment. To ensure insulation between the wiring group 40 and the substrate 10, an insulating film 30 is also disposed on the end side surface of the substrate 10. Although not shown here, by covering the outer side surface of the wiring portion on the end side surface of the substrate 10 with an insulating material, breaks and short circuits in the wiring portion can be preferably suppressed. The depth of the recess 50 can be set in the same way as in the electronic component according to the first embodiment.

[0043] Next, a method for manufacturing an electronic component according to the second embodiment will be described with reference to Fig. 3. Fig. 3 is a cross-sectional view showing steps in the method for manufacturing an electronic component according to the second embodiment.

[0044] 3(a), a semiconductor element 20, an insulating layer 31, and a conductive layer 41 are formed on a substrate 10, and an insulating layer 32 is further formed on the conductive layer 41, in the same manner as in the manufacturing method of the electronic component 300 according to the first embodiment shown in FIG. In this embodiment, silicon having a thickness of 725 μm is used as the substrate 10. The insulating layer 32 can be made of the same material as the insulating layer 31.

[0045] 3(b), trenches 55 are formed in a region including the end face of the substrate 10. To form trenches 55, first, the insulating layers 31 and 32 on the surface 101 of the substrate 10 are removed by dry etching, and then, using the insulating layers 31 and 32 as a mask, vias are formed vertically partway inside the substrate 10 using the Bosch method. In this embodiment, the depth of trenches 55 is 200 μm.

[0046] In the process shown in FIG. 3(c), an insulating layer 33 is formed to cover the insulating layer 32 and the inner surface of the trench 55. The entire surface is then etched back to remove the insulating layer 33 from the bottom of the trench 55. The insulating layer 33 can be made of the same material as the insulating layer 31. Through holes TH are formed in the insulating layer 32, connecting them to the first conductive layer 41. A conductive layer 42 is then formed on the through holes TH and the insulating layer 32 to electrically connect the first and second wiring layers. The conductive layer 42 is also formed on the inner surface of the trench 55. In this embodiment, copper is used as the conductive layer 42. A copper seed layer is formed by sputtering to a thickness of 500 nm, and then deposited by electroplating to a thickness of 4 μm on the side of the trench 55. The substrate 10 is then thinned to a thickness of 400 μm by backgrinding (not shown). By performing the thinning process on the substrate 10, it becomes possible to reduce the depth of the recess 50 required to expose the second wiring provided in the trench 55 when forming the recess 50 described below. Furthermore, since the substrate 10 itself becomes thinner, it becomes possible to reduce the height of the electronic component 300 including the substrate 10.

[0047] 3(d), a recess 50 is formed from the rear surface 102 side of the substrate 10. The recess can be formed by the same method as in the first embodiment. Here, by forming the recess 50 with a depth of 200 μm, the conductive layer 42 provided in the trench 55 described above is exposed.

[0048] 3(e), a conductive layer 43 is formed at least in the exposed region of the conductive layer 42 in the recess 50. The third wiring portion can be made of the same material as the conductive layer 41. Next, an insulating layer 34 is formed to cover at least the conductive layer 43, and the insulating layer 34 is removed in a predetermined region to expose the conductive layer 43, thereby forming the terminal 60.

[0049] In the step of Figure 3(f), the wiring board 200 is joined to the electronic device 100 via the conductive member 150 in the same manner as in the method for manufacturing an electronic component according to the first embodiment shown in Figure 2, thereby completing the manufacture of the electronic component according to the second embodiment of the present invention.

[0050] In this embodiment, bonding to the wiring board is performed on the back surface of the substrate, so it is possible to widely arrange thick portion 11 on front surface 101 of the substrate, thereby reducing the area of ​​the substrate. By using the second structure of the electronic component according to the present invention, the height of the electronic component can be reduced, and as a result, the size of the device into which the electronic component is incorporated can be reduced.

[0051] The electronic component 300 according to the third embodiment will be further described. The third embodiment differs from the first and second embodiments in that the electronic device 100 is provided with a through via 70 that penetrates the substrate 10. As in the second embodiment, the recess 50 is provided on the back surface 102 of the electronic device 100, and the through via 70 extends from the bottom of the recess 50 to the wiring group 40 provided on the front surface 101 of the electronic device 100. A conductive material such as copper or gold is embedded in the through via 70, and an insulating film 30 is provided at the interface between the substrate 10 and the through via 70 to ensure insulation. As in the first and second embodiments, the electronic component according to the third embodiment of the present invention is characterized in that the bonding surface (A in FIG. 5) of the wiring board 200 is located inside the recess 50 of the substrate. In other words, at least a portion of the wiring board is located within the recess of the substrate. The substrate 10, semiconductor element 20, insulating film 30, wiring group 40, terminal 60, conductive member 150, and wiring board 200 constituting the electronic device 100 can be the same as those in the first and second embodiments. The depth of the recess can be set in the same way as described in the first embodiment.

[0052] Next, a method for manufacturing an electronic component according to the third embodiment will be described with reference to Fig. 4. Fig. 4 is a cross-sectional view showing steps in the method for manufacturing an electronic component according to the third embodiment.

[0053] In the process shown in FIG. 4(a), a semiconductor element 20, an insulating layer 31, and a conductive layer 41 are formed on a substrate 10 in the same manner as in the manufacturing method of an electronic component according to the first embodiment (). In this example, silicon having a thickness of 725 μm was used as the substrate 10. After the conductive layer 41 was formed, the substrate 10 was thinned to a thickness of 400 μm by back grinding (not shown). By performing the substrate thinning process, it becomes possible to reduce the depth of the vias required to penetrate the substrate in the through via formation process described below. Furthermore, because the substrate itself is thinned, it is possible to reduce the height of the electronic component including the substrate.

[0054] 4(b), a recess 50 is formed from the rear surface 102 side of the substrate 10. The depth of the recess is set to 200 μm. The recess can be formed by the same method as in the first embodiment.

[0055] 4(c), a through via VIA is formed, which extends from the bottom surface of the recess 50 through the substrate 10 to the conductive layer 41 formed on the surface 101 of the substrate 10. When silicon is used as the substrate 10 and silicon oxide is used as the insulating layer 31, the substrate portion is first processed vertically by the Bosch method. Then, the insulating layer 31 is opened by RIE (Reactive Ion Etching), thereby forming a through via that extends to the conductive layer 41. Next, an insulating layer 32 is formed on the inner surface of the through via VIA, and the entire surface is etched back to remove the insulating layer 32 only from the bottom surface of the through via VIA, exposing the conductive layer 41.

[0056] 4(d), a conductive member is formed inside the through via VIA to form the through via 70. Specifically, a copper seed layer is formed on the inner surface of the through via by sputtering to a thickness of 500 nm, and then copper is formed by electroplating to fill the through via.

[0057] In the step of Figure 4(e), similar to the manufacturing method of the electronic component according to the second embodiment shown in Figure 3(f), an insulating layer 33 is formed to cover the through via 70, and then a predetermined area is opened to expose the through via, thereby forming a terminal 60.

[0058] In the step of Figure 4(f), the wiring board 200 is joined to the electronic device 100 via the conductive member 150 in the same manner as in the method for manufacturing the electronic component according to the first embodiment shown in Figures 2(g) to 2(h), thereby completing the manufacture of the electronic component according to the third embodiment of the present invention.

[0059] In this embodiment, as in the second embodiment, bonding to the wiring board is performed on the back surface of the substrate, so that thick plate portion 11 on front surface 101 of the substrate can be arranged widely, thereby reducing the area of ​​the substrate. By using the third structure, the height of the electronic component can be reduced, and as a result, the size of the device in which the electronic component is incorporated can be reduced.

[0060] Fig. 5(a) is a schematic cross-sectional view of an electronic component 300 according to a fourth embodiment. Fig. 5(b) is a schematic cross-sectional view of an electronic component 300 according to a fifth embodiment.

[0061] The electronic component 300 of the fourth and fifth embodiments includes a cover member 81 that overlaps the thick plate portion 11 in a direction perpendicular to the plane 131. The electronic component 300 further includes a joining member 82 that is disposed between the cover member 81 and the electronic device 100 and joins the cover member 81 to the electronic device 100.

[0062] In the fourth embodiment, a reinforcing resin member 90 is disposed between wiring board 200 and substrate 10. This increases the bonding strength of wiring board 200. Other points of electronic component 300 of the fourth embodiment are similar to those of the first embodiment, and the differences between the fourth embodiment and the first embodiment may also be applied to the second, third, and fifth embodiments.

[0063] In the fifth embodiment, cover member 81 and bonding member 82 overlap thin plate portion 12 in a direction perpendicular to plane 131. This makes it possible to reinforce the thin plate portion of wiring board 200. Other points of electronic component 300 of the fifth embodiment are similar to those of the third embodiment, and the differences between the fifth and third embodiments may be applied to the first, second, and fourth embodiments.

[0064] 6 is a schematic diagram showing an embodiment of a device 500 to which the electronic component 300 according to any of the above-described embodiments is applied. The device 500 is an electronic device such as a camera, a display, or a personal digital assistant, and may also be transportation equipment such as a vehicle, a ship, an airplane, or a satellite, medical equipment such as an endoscope or a radiological diagnostic device, or analytical equipment. The electronic component 300 is suitable for the device 500 having an imaging function and / or a display function.

[0065] The device 500 includes a circuit component 400 on which integrated circuit components and the like are mounted. The imaging device 110 and the wiring board 210 of the imaging component 310, which includes the imaging device 110 and the wiring board 210, are connected to the circuit component 400. The display device 120 and the wiring board 220 of the display component 320, which includes the display device 120 and the wiring board 220, are connected to the circuit component 400. The imaging component 310 may be the electronic component 300 described above. In this case, the imaging device 110 corresponds to the electronic device 100 described above, and the wiring board 210 corresponds to the wiring board 200 described above. The display component 320 may be the electronic component 300 described above. In this case, the display device 120 corresponds to the electronic device 100 described above, and the wiring board 220 corresponds to the wiring board 200 described above. The display device 120 may constitute an electronic viewfinder. The device 500 has a detachable lens 410 that forms an image on the imaging device 110. The camera serving as the device 500 may be a reflex or non-reflex camera.

[0066] The thickness of electronic component 300, in which wiring board 200 is joined to substrate 10 via conductive member 150, is the sum of the thicknesses of the components when the components are stacked vertically. Electronic component 300 including substrate 10 is incorporated into device 500 for use, and miniaturization of electronic component 300 is necessary. Even if the thickness of substrate 10 is reduced by the thickness of conductive member 150, the thickness of conductive member 150 is still very small compared to that of substrate 10 and wiring board 200. However, by providing recess 50 such that insulator portion 202 of wiring board 200 is disposed in recess 50, a miniaturized electronic component can be provided, enabling miniaturization of device 500 or higher component density. [Explanation of symbols]

[0067] 10 Substrate 11 Thick plate section 12 Thin plate part 111, 121 central area 101 Surface 102 Back side 103 End face 100 Electronic Devices 210 Conductor part 220 Insulator section 200 Wiring board 300 Electronic Components 131, 132 Virtual plane

Claims

1. an electronic device having a substrate; a wiring board having a conductor portion electrically connected to the electronic device and an insulator portion supporting the conductor portion, the substrate has a front surface including a first region, a back surface including a second region, and an end surface connecting the front surface and the back surface; the substrate has a first portion located between the first region and the second region and a second portion having a thickness smaller than that of the first portion; An electronic component, characterized in that the insulator portion of the wiring board is located between the second portion and an imaginary plane located between the first region and the second region.

2. The electronic component according to claim 1, characterized in that the difference in thickness between the first portion and the second portion is more than half the thickness of the portion of the wiring board that overlaps the second portion in a direction perpendicular to the plane.

3. The electronic component according to claim 1 or 2, characterized in that the difference in thickness between the first portion and the second portion is greater than the thickness of the portion of the wiring board that overlaps the second portion in a direction perpendicular to the plane.

4. 4. The electronic component according to claim 1, wherein the wiring board extends outward beyond the end face of the substrate in a direction parallel to the plane.

5. 5. The electronic component according to claim 1, wherein the second portion is located between at least a portion of the end face and the first portion, and the substrate does not have a portion between the first portion and the portion of the end face that is thicker than or equal to the thickness of the first portion.

6. 6. The electronic component according to claim 1, wherein the wiring board does not overlap the first portion in a direction perpendicular to the plane.

7. 7. The electronic component according to claim 1, wherein a semiconductor element is arranged in the first region, and the distance between the plane and the first region is greater than the distance between the first region and the second region.

8. 7. The electronic component according to claim 1, wherein a semiconductor element is arranged in the first region, and the distance between the plane and the second region is greater than the distance between the first region and the second region.

9. 9. The electronic component according to claim 1, wherein a terminal electrically connected to the conductive portion of the wiring board is located between the second portion and the wiring board.

10. 9. The electronic component according to claim 8, wherein the electronic device includes wiring disposed over the front surface, the edge surface, and the back surface.

11. The electronic component according to claim 8 , wherein the electronic device comprises a through via that penetrates the second portion.

12. 11. The electronic component according to claim 1, wherein the substrate is a semiconductor substrate.

13. 13. The electronic component according to claim 1, wherein the wiring board is a flexible wiring board.

14. 14. The electronic component according to claim 1, wherein the wiring board is bonded to the electronic device via an anisotropic conductive film or a metal bump.

15. 15. The electronic component according to claim 1, wherein a resin member is disposed between the wiring board and the substrate.

16. 15. The electronic component according to claim 1, further comprising: a cover member that overlaps the first portion in a direction perpendicular to the plane; and a joining member that is disposed between the cover member and the electronic device and joins the cover member and the electronic device.

17. 17. The electronic component according to claim 16, wherein the cover member and the joining member overlap the second portion in a direction perpendicular to the plane.

18. 18. The electronic component according to claim 1, wherein the electronic device is an imaging device.

19. 18. The electronic component according to claim 1, wherein the electronic device is a display device.

20. An electronic component according to any one of claims 1 to 19; and a circuit component to which the wiring board is connected.

Images