Components for semiconductor manufacturing equipment

Abstract

The member for a semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface with a large number of small protrusions provided on a reference surface on its upper surface and incorporating an electrostatic electrode, a plug placement hole provided in the ceramic plate so as to extend in the vertical direction, an electrostatic electrode opening provided at a position where the plug placement hole penetrates the electrostatic electrode, a cooling plate provided on the lower surface of the ceramic plate, a gas hole penetrating the cooling plate in the vertical direction and communicating with the plug placement hole, a plug disposed in the plug placement hole and having a gas flow path through which a heat conduction gas can flow in the vertical direction, and a raised portion provided so as to surround the gas flow path and having a top surface higher than the reference surface and lower than the top surface of the small protrusions.

Description

Semiconductor manufacturing equipment components

[0001] The present invention relates to a member for a semiconductor manufacturing device.

[0002] Conventionally, semiconductor manufacturing equipment components include a ceramic plate having a wafer mounting surface and a built-in electrostatic electrode, and a cooling plate attached to the underside of the ceramic plate. Patent Document 1 discloses such a ceramic plate, which includes a plug placement hole that penetrates the ceramic plate in the vertical direction and a porous plug placed in the plug placement hole. Patent Document 1 also discloses a cooling plate that includes a gas hole that penetrates the cooling plate in the vertical direction and communicates with the plug placement hole. In such semiconductor manufacturing equipment components, helium gas is introduced into the porous plug through the gas hole in the cooling plate while the wafer is electrostatically attracted to the wafer mounting surface. The helium gas is then supplied to the backside of the wafer, improving thermal conduction between the wafer and the ceramic plate. Because the helium gas passes through the pores of the porous plug, arc discharge on the backside of the wafer can be suppressed compared to when the porous plug is not present.

[0003] Japanese Patent Application Laid-Open No. 2019-29384

[0004] The diameter of the porous plug is generally made relatively large to ensure a sufficient flow rate of helium gas through the porous plug, and the diameter of the plug placement hole is also generally made large accordingly. Furthermore, an electrostatic electrode opening is provided at the position where the plug placement hole penetrates the electrostatic electrode, and the diameter of the electrostatic electrode opening increases as the diameter of the plug placement hole increases. The absence of an electrostatic electrode directly above the electrostatic electrode opening on the wafer mounting surface reduces the wafer chucking force. However, as the diameter of the electrostatic electrode opening increases, this reduction in wafer chucking force becomes more pronounced. As a result, the cooling plate does not sufficiently dissipate heat from the area directly above the electrostatic electrode opening, making it prone to becoming a singular hot spot.

[0005] The present invention has been made to solve such problems, and its main object is to prevent the portion directly above the electrostatic electrode opening from becoming a singular point.

[0006] [1] A semiconductor manufacturing equipment member of the present invention comprises: a ceramic plate having an electrostatic electrode built in, and having a wafer mounting surface on its upper surface, with numerous small protrusions for supporting a wafer provided on a reference surface; a plug arrangement hole provided in the ceramic plate so as to extend in the vertical direction; an electrostatic electrode opening provided in the electrostatic electrode at a position through which the plug arrangement hole passes, the electrostatic electrode opening having a diameter equal to or larger than that of the plug arrangement hole; a cooling plate provided on the underside of the ceramic plate; a gas hole passing through the cooling plate in the vertical direction and communicating with the plug arrangement hole; a plug provided in the plug arrangement hole and having a gas flow path through which a heat transfer gas can pass in the vertical direction; and a raised portion provided so as to surround the periphery of the gas flow path, the top surface of which is higher than the reference surface and lower than the top surfaces of the small protrusions.

[0007] This semiconductor manufacturing equipment component includes a raised portion surrounding the gas flow path, the top surface of which is higher than the reference plane and lower than the top surfaces of the small protrusions. The thermal conductivity of the raised portion is higher than that of the heat-conducting gas. Therefore, even if the wafer chucking force is low in the portion of the wafer mounting surface directly above the electrostatic electrode opening, heat from that portion is easily transferred to the cooling plate via the raised portion. Furthermore, because the top surface of the raised portion is higher than the reference plane, heat transfer from that portion directly above is promoted, preventing the portion directly above from becoming too hot. On the other hand, because the top surface of the raised portion is lower than the top surface of the small protrusions, heat transfer from that portion directly above is promoted too much, preventing the portion directly above from becoming too cold. Therefore, the portion directly above the electrostatic electrode opening can be prevented from becoming a singular point.

[0008] In this specification, "upper" and "lower" do not represent absolute positional relationships, but rather relative positional relationships. Therefore, depending on the orientation of the semiconductor manufacturing equipment component, "upper" and "lower" may become "lower" and "upper," "left" and "right," or "front" and "rear."

[0009] [2] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in [1] above), the raised portion and the ceramic plate may be integral. Therefore, by integrating the raised portion and the ceramic plate (making the raised portion a part of the ceramic plate), the raised portion can be formed relatively easily.

[0010] [3] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to [1] or [2] above), the protrusion may have a plug covering portion that covers an upper surface of the plug, and the plug covering portion may have a small hole that penetrates in the vertical direction. In this way, the plug is protected by the plug covering portion.

[0011] [4] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in [1] above), the plug may be a dense body having the gas flow channel formed therein. By using a dense body having a gas flow channel formed therein as the plug in this way, it becomes unnecessary to provide a protruding portion separately from the plug.

[0012] [5] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component according to any one of [1], [2], or [4] above), the plug placement hole may be provided so as to penetrate the ceramic plate in the vertical direction, the plug may protrude from an upper opening of the plug placement hole to function as the raised portion, and the upper surface of the plug may be flush with the upper surface of the raised portion.

[0013] [6] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [5] above), the depth Y from the top surface of the small protrusion to the top surface of the protuberance may be between 1 / 2 and 2 / 3 of the height A from the reference plane to the top surface of the small protrusion. If the depth Y is greater than 2 / 3 of the height A, it becomes difficult for the heat directly above the electrostatic electrode opening to be sufficiently transferred to the cooling plate. If the depth Y is less than 1 / 2 of the height A, there is a risk that the heat directly above the electrostatic electrode opening will be transferred too much to the cooling plate or that the flow of heat conduction gas will be hindered.

[0014] [7] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member according to any one of [1] to [6] above), the raised portion may be ring-shaped in a plan view, and the outer diameter of the raised portion may be larger than the outer diameter of the gas flow path and smaller than the diameter of the electrostatic electrode opening. In this way, the effects of the present invention can be easily achieved.

[0015] A longitudinal sectional view of a semiconductor manufacturing equipment member 10. A plan view of a ceramic plate 20. A partially enlarged view of FIG. 1. A partially enlarged view of a longitudinal sectional view of another embodiment. A partially enlarged view of a longitudinal sectional view of another embodiment. A partially enlarged view of a longitudinal sectional view of another embodiment.

[0016] Next, preferred embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a longitudinal cross-sectional view of a semiconductor manufacturing equipment member 10, Fig. 2 is a plan view of a ceramic plate 20, and Fig. 3 is an enlarged view of a portion of Fig. 1. Note that in Fig. 3, the heights of the small circular protrusions 21b and the raised portions 60 are exaggerated.

[0017] As shown in FIG. 1, the semiconductor manufacturing equipment member 10 includes a ceramic plate 20, a cooling plate 30, a metal bonding layer 40, a porous plug 50, a raised portion 60 (see FIGS. 2 and 3), and an insulating tube 70.

[0018] The ceramic plate 20 is a circular ceramic plate (e.g., 300 mm in diameter and 5 mm in thickness) made of sintered alumina, sintered aluminum nitride, or the like. The upper surface of the ceramic plate 20 serves as a wafer mounting surface 21. The ceramic plate 20 incorporates an electrode 22. As shown in FIG. 2 , a seal band 21a is formed along the outer edge of the wafer mounting surface 21 of the ceramic plate 20, and multiple small circular protrusions 21b are formed over the entire surface. The seal band 21a and the small circular protrusions 21b have the same height, e.g., several micrometers to several tens of micrometers. The electrode 22 is a flat mesh electrode used as an electrostatic electrode, to which a DC voltage can be applied. When a DC voltage is applied to the electrode 22, the wafer W is attracted and fixed to the wafer mounting surface 21 (specifically, the upper surfaces of the seal band 21a and the small circular protrusions 21b) by electrostatic attraction. When the DC voltage is removed, the wafer W is released from the wafer mounting surface 21. The portion of the wafer mounting surface 21 on which the seal band 21a, the small circular protrusions 21b, and the raised portions 60 (described later) are not provided is referred to as a reference surface 21c.

[0019] The plug arrangement holes 24 are provided in the ceramic plate 20 so as to penetrate the electrode 22 and extend in the vertical direction. The plug arrangement holes 24 are cylindrical holes that penetrate the ceramic plate 20 in the vertical direction, and are provided at multiple locations on the ceramic plate 20 (for example, multiple locations equally spaced along the circumferential direction as shown in FIG. 2 ). Porous plugs 50, which will be described later, are disposed in the plug arrangement holes 24. The electrode 22 is provided with an electrode through hole 23 that is concentric with the plug arrangement hole 24. The diameter B of the electrode through hole 23 is larger than the diameter of the plug arrangement hole 24.

[0020] The cooling plate 30 is a circular plate with good thermal conductivity (a circular plate with the same or larger diameter as the ceramic plate 20) and is provided on the underside of the ceramic plate 20. The cooling plate 30 includes a refrigerant flow path 32 through which the refrigerant circulates and a gas hole 34 through which gas is supplied to the porous plug 50. The refrigerant flow path 32 is formed in a single stroke from the inlet to the outlet across the entire surface of the cooling plate 30 in a plan view. The gas hole 34 is a cylindrical hole and is provided in a position facing the plug placement hole 24. Examples of materials for the cooling plate 30 include metal materials and composite materials of metal and ceramic. Metal materials include Al, Ti, Mo, and alloys thereof. Metal-ceramic composite materials include metal matrix composites (MMCs) and ceramic matrix composites (CMCs). Specific examples of such composite materials include a material containing Si, SiC, and Ti (also called SiSiCTi), a material in which porous SiC is impregnated with Al and / or Si, and a composite material of Al2O3 and TiC. It is preferable to select a material for the cooling plate 30 that has a thermal expansion coefficient close to that of the material for the ceramic plate 20. The cooling plate 30 is also used as an RF electrode.

[0021] The metal bonding layer 40 bonds the lower surface of the ceramic plate 20 to the upper surface of the cooling plate 30. The metal bonding layer 40 is formed, for example, by thermal compression bonding (TCB). TCB is a known method in which a metal bonding material is sandwiched between two components to be bonded and the two components are pressure-bonded while heated to a temperature below the solidus temperature of the metal bonding material. The metal bonding layer 40 has a round hole 42 that penetrates the metal bonding layer 40 in the vertical direction at a position opposite the gas hole 34.

[0022] The porous plug 50 is disposed and fixed in the plug placement hole 24. Specifically, the outer peripheral surface of the porous plug 50 may be bonded to the inner peripheral surface of the plug placement hole 24, or a male threaded portion on the outer peripheral surface of the porous plug 50 may be threaded into a female threaded portion on the inner peripheral surface of the plug placement hole 24. Alternatively, holes may be drilled in the vertical direction in a molded plate before firing the ceramic plate 20, and the holes may be filled with a mixed powder of ceramic powder and resin powder. The entire plate may then be fired to burn off the resin powder in the holes and sinter the ceramic powder, thereby producing the porous plug 50 and the ceramic plate 20. The porous plug 50 has numerous holes throughout, allowing heat-conducting gas to flow vertically through the holes. Therefore, the entire porous plug 50 functions as a gas flow path. The top surface of the porous plug 50 is flush with the top surface of the raised portion 60. The porous plug 50 may be a porous bulk obtained by sintering ceramic powder. Examples of ceramic materials that can be used include alumina and aluminum nitride. The porosity of the porous plug 50 is preferably 30% or more, and the average pore diameter is preferably 20 μm or more. The porosity of the porous plug 50 may be 70% or less.

[0023] The raised portion 60 is a flat, dense ring-shaped portion provided to surround the porous plug 50 (and also the plug placement hole 24). The portion of the raised portion 60 surrounding the plug placement hole 24 is higher than the reference plane 21c and lower than the top surfaces of the seal band 21a and the small circular protrusions 21b. The raised portion 60 and the ceramic plate 20 are the same entity. Therefore, the thermal conductivity of the raised portion 60 is higher than that of helium gas, which is a heat-conducting gas. The depth Y of the raised portion 60 (the vertical length from the top surface of the small circular protrusions 21b to the top surface of the raised portion 60) is preferably between ½ and ⅔ of the height A of the small circular protrusions 21b (the vertical length from the reference plane 21c to the top surface of the small circular protrusions 21b). The inner diameter of the raised portion 60 is the same as the diameter C of the porous plug 50 (the same as the outer diameter of the gas flow path), and the outer diameter X of the raised portion 60 is larger than the diameter C of the porous plug 50 and is equal to or smaller than the diameter B of the electrode through-hole 23.

[0024] The insulating tube 70 is a tube that is circular in plan view and made of dense ceramic (e.g., dense alumina). The outer circumferential surface of the insulating tube 70 is bonded to the inner circumferential surfaces of the circular holes 42 in the metal bonding layer 40 and the inner circumferential surfaces of the gas holes 34 in the cooling plate 30 via adhesive layers (not shown). The adhesive layers may be organic adhesive layers (resin adhesive layers) or inorganic adhesive layers. An additional adhesive layer may be provided between the upper surface of the insulating tube 70 and the lower surface of the ceramic plate 20. The internal space of the insulating tube 70 is in communication with the porous plug 50. Therefore, when gas is introduced into the gas holes 34, the gas passes through the insulating tube 70 and the porous plug 50 and is supplied to the backside of the wafer W.

[0025] Next, an example of how the semiconductor manufacturing equipment component 10 configured as described above is described. First, with the semiconductor manufacturing equipment component 10 installed in a chamber (not shown), a wafer W is placed on the wafer mounting surface 21. The chamber is then depressurized using a vacuum pump to a predetermined vacuum level, and a DC voltage is applied to the electrode 22 of the ceramic plate 20 to generate an electrostatic attraction force, thereby adsorbing and fixing the wafer W to the wafer mounting surface 21 (specifically, the upper surface of the seal band 21a or the upper surface of the small circular protrusions 21b). Next, a reactive gas atmosphere at a predetermined pressure (e.g., several tens to several hundreds of Pa) is created in the chamber. In this state, a high-frequency voltage is applied between an upper electrode (not shown) installed in the ceiling of the chamber and the cooling plate 30 of the semiconductor manufacturing equipment component 10 to generate plasma. The surface of the wafer W is treated with the generated plasma. A coolant circulates through the coolant flow path 32 of the cooling plate 30. A backside gas is introduced through the gas hole 34 from a gas cylinder (not shown). A thermally conductive gas (e.g., helium) is used as the backside gas. The backside gas is supplied and sealed through the insulating tube 70 and the porous plug 50 into the space between the backside of the wafer W and the reference surface 21c of the wafer mounting surface 21 and the space between the backside of the wafer W and the raised portion 60. The presence of this backside gas allows efficient heat conduction between the wafer W and the ceramic plate 20.

[0026] Next, a manufacturing example of the semiconductor manufacturing equipment component 10 will be described. First, a semiconductor manufacturing equipment component 10 having a flat wafer mounting surface 21 (i.e., one without the seal band 21a, small circular protrusions 21b, and raised portion 60) is prepared. Because the manufacturing method is publicly known (e.g., Patent Document 1), its description will be omitted here. Next, a mask with circular holes formed at the positions corresponding to the raised portion 60 is placed over the flat wafer mounting surface 21, the exposed portion is blasted, and then the mask is removed. This forms the raised portion 60. Next, a mask is formed on the wafer mounting surface 21 to cover the positions corresponding to the seal band 21a, small circular protrusions 21b, and raised portion 60. The exposed portion is blasted, and then the mask is removed. This forms the seal band 21a, small circular protrusions 21b, and reference surface 21c. This process yields the semiconductor manufacturing equipment component 10.

[0027] In the semiconductor manufacturing equipment member 10 described above, a raised portion 60 having a thermal conductivity higher than that of the heat-conducting gas is provided so as to surround the porous plug 50 (the entire portion corresponds to the gas flow path). Therefore, even if the wafer suction force is low in the portion of the wafer mounting surface 21 directly above the electrode through-hole 23, heat from that portion can be easily transferred to the cooling plate 30 via the raised portion 60. Furthermore, because the top surface of the raised portion 60 is higher than the reference surface 21c, heat transfer from the portion directly above is promoted, preventing the portion directly above from becoming too hot. On the other hand, because the top surface of the raised portion 60 is lower than the top surface of the small circular protrusion 21b, excessive heat transfer from the portion directly above is also promoted, preventing the portion directly above from becoming too cold. Therefore, the portion directly above the electrode through-hole 23 can be prevented from becoming a singular point, such as a hot spot.

[0028] Furthermore, the raised portion 60 and the ceramic plate 20 are integral. Generally, the ceramic plate 20 has a higher thermal conductivity than a heat-conducting gas (for example, the thermal conductivity of alumina is approximately 30 W / mK, the thermal conductivity of aluminum nitride is approximately 150 W / mK, and the thermal conductivity of helium gas is approximately 0.02 W / mK, depending on the gas pressure used). Therefore, by integrating the raised portion 60 and the ceramic plate 20 (making the raised portion 60 a part of the ceramic plate 20), the raised portion 60 can be formed relatively easily.

[0029] Furthermore, the upper surface of the porous plug 50 is at the same height as the upper surface of the raised portion 60. Therefore, processing can be performed relatively easily compared to when the upper surfaces of the porous plug 50 and the raised portion 60 are at different heights.

[0030] Furthermore, the depth Y from the top surface of the small circular protrusion 21b to the top surface of the raised portion 60 is preferably between 1 / 2 and 2 / 3 of the height A from the reference plane 21c to the top surface of the small circular protrusion 21b. If the depth Y is greater than 2 / 3 of the height A, it is not preferable because the heat directly above the electrode through-hole 23 is not sufficiently transferred to the cooling plate 30. If the depth Y is less than 1 / 2 of the height A, it is not preferable because the heat directly above the electrode through-hole 23 may be transferred too much to the cooling plate 30 or the flow of heat conduction gas may be hindered.

[0031] The raised portion 60 has a ring shape in a plan view, and the outer diameter X of the raised portion 60 is larger than the diameter C of the porous plug 50 and is equal to or smaller than the diameter B of the electrode through-hole 23. This makes it easier to obtain the effects of the present invention.

[0032] It goes without saying that the present invention is not limited to the above-described embodiment, and can be embodied in various forms as long as they fall within the technical scope of the present invention.

[0033] In the above-described embodiment, the plug 150 shown in FIG. 4 may be used instead of the porous plug 50. The plug 150 is a cylindrical dense body 152 having a gas flow channel 154. The dense body 152 is formed of a material (e.g., a ceramic material) with a higher thermal conductivity than helium, a thermally conductive gas. The gas flow channel 154 is a spiral flow channel provided inside the dense body 152 and opens to the top and bottom surfaces of the dense body 152. Therefore, gas can flow vertically. In this case, the outer diameter of the gas flow channel 154 is the diameter of the outer periphery of the gas flow channel 154 when viewed from above. Even when the plug 150 is used instead of the porous plug 50, the same effects as those of the above-described embodiment can be obtained. Note that the shape of the gas flow channel 154 is not limited to a spiral shape and may be, for example, a zigzag shape.

[0034] In the above-described embodiment, the vertical length of the porous plug 50 is the same as the vertical length of the plug placement hole 24, but this is not particularly limited. For example, as shown in FIG. 3 , the vertical length of the porous plug 50 may be shortened so that the lower surface of the porous plug 50 is positioned above the lower opening of the plug placement hole 24. Alternatively, the vertical length of the porous plug 50 may be lengthened so that the lower surface of the porous plug 50 is positioned below the lower opening of the plug placement hole 24 and inside the insulating tube 70. Alternatively, as shown in FIG. 5 , a stepped plug placement hole 224 having an upper large-diameter portion and a lower small-diameter portion may be formed in the ceramic plate 20, and a porous plug 250 may be placed in the upper large-diameter portion. Regardless of the configuration adopted, the same effects as those of the above-described embodiment can be obtained. Note that in FIG. 5 , the same components as those of the above-described embodiment are denoted by the same reference numerals. In FIG. 5 , the plug 150 of FIG. 4 may be used instead of the porous plug 250.

[0035] In the above-described embodiment, the upper surface of the porous plug 50 is flush with the upper surface of the raised portion 60, but this is not particularly limited. For example, the configuration shown in FIG. 6 may be employed. In FIG. 6, the upper surface of the porous plug 250 is lower than the upper surface of the raised portion 60, and the raised portion 60 has a plug covering portion 261 that covers the upper surface of the porous plug 250. The plug covering portion 261 has a plurality of small holes 262 that penetrate vertically and communicate with the porous plug 250 (gas flow path). The plug covering portion 261 may be integral with the ceramic plate 20 or may be a ceramic cover separate from the ceramic plate 20. Even when the configuration shown in FIG. 6 is employed, the same effects as those of the above-described embodiment can be obtained. In addition, the porous plug 250 is protected by the plug covering portion 261. Note that in FIG. 6, the same components as those of the above-described embodiment are denoted by the same reference numerals.

[0036] In the above-described embodiment, the porous plug 50 and the raised portion 60 are separate entities. However, this is not limiting. For example, the configuration shown in FIG. 7 may be employed. As already described, the plug 150 in FIG. 7 is a cylindrical dense body 152 with a gas flow passage 154 (see FIG. 4 ) and serves as a substitute for the porous plug 50 and raised portion 60. In this case, the plug placement hole 324 is located in an area surrounded by multiple circular small protrusions 21 b, similar to the plug placement hole 24 in FIG. 2 . The vertical length of the plug 150 is longer than the vertical length of the plug placement hole 324. Therefore, the plug 150 protrudes upward from the upper opening of the plug placement hole 324, and the dense portion 156 (the ring-shaped portion surrounded by a dashed line in FIG. 7 ) of this protruding portion surrounding the gas flow passage 154 functions as a raised portion. The outer diameter X of the raised ring-shaped portion 156 is greater than the outer diameter C of the gas flow passage 154 and equal to or less than the diameter B of the electrode through-hole 23. Even when the configuration shown in Fig. 7 is adopted, the same effects as those of the above-described embodiment can be obtained. In addition, by forming the plug 150 in a dense body 152 in which the gas flow path 154 is formed, it is no longer necessary to provide a raised portion separately from the plug 150. Note that in Fig. 7, the same components as those in the above-described embodiment are denoted by the same reference numerals.

[0037] In the above-described embodiment, the insulating pipe 70 is provided, but the insulating pipe 70 may be omitted. Furthermore, instead of providing the gas holes 34 in the cooling plate 30, a gas channel structure may be provided. The gas channel structure may include a ring portion provided inside the cooling plate 30 and concentric with the cooling plate 30 in a plan view, an inlet portion for introducing gas from the back surface of the cooling plate 30 into the ring portion, and a distributor portion (corresponding to the gas holes 34 described above) for distributing gas from the ring portion to each porous plug 50. The number of inlet portions may be less than the number of distributor portions, for example, one. Alternatively, the ring portion of the gas channel structure may be provided inside the ceramic plate 20.

[0038] In the above-described embodiment, an electrostatic electrode is exemplified as the electrode 22 built into the ceramic plate 20, but this is not particularly limited. For example, in addition to the electrode 22, a heater electrode (resistive heating element) or an RF electrode may be built into the ceramic plate 20.

[0039] In the above-described embodiment, the ceramic plate 20 and the cooling plate 30 are joined together by the metal joining layer 40, but a resin adhesive layer may be used instead of the metal joining layer 40.

[0040] The present invention can be used in semiconductor manufacturing equipment components.

[0041] 10 semiconductor manufacturing equipment member, 20 ceramic plate, 21 wafer mounting surface, 21a seal band, 21b small circular protrusion, 21c reference surface, 22 electrode, 23 electrode through hole, 24 plug placement hole, 30 cooling plate, 32 refrigerant flow path, 34 gas hole, 40 metal bonding layer, 42 round hole, 50 porous plug, 60 raised portion, 70 insulating tube, 150 plug, 152 dense body, 154 gas flow path, 156 dense portion, 224 plug placement hole, 250 porous plug, 261 plug covering portion, 262 small hole, 324 plug placement hole.

Claims

1. A component for semiconductor manufacturing equipment comprising: a ceramic plate having an electrostatic electrode built in, the ceramic plate having a wafer mounting surface on its upper surface with a number of small protrusions for supporting a wafer provided on a reference surface; a plug arrangement hole provided in the ceramic plate so as to extend in the vertical direction; an electrostatic electrode opening provided in a position of the electrostatic electrode through which the plug arrangement hole passes, the electrostatic electrode opening having a diameter the same as or larger than that of the plug arrangement hole; a cooling plate provided on the underside of the ceramic plate; a gas hole passing through the cooling plate in the vertical direction and communicating with the plug arrangement hole; a plug provided in the plug arrangement hole and having a gas flow path through which a thermal conduction gas can flow in the vertical direction; and a raised portion provided so as to surround the gas flow path, the top surface of which is higher than the reference surface and lower than the top surfaces of the small protrusions.

2. The semiconductor manufacturing equipment member according to claim 1, wherein the raised portion and the ceramic plate are integral.

3. A semiconductor manufacturing equipment member according to claim 1, wherein the raised portion has a plug covering portion covering an upper surface of the plug, and the plug covering portion has a small hole passing therethrough in the vertical direction.

4. The semiconductor manufacturing equipment member according to claim 1, wherein the plug is provided with the gas flow path in a dense body.

5. A semiconductor manufacturing equipment component as claimed in claim 1, 2 or 4, wherein the plug placement hole is formed so as to penetrate the ceramic plate in the vertical direction, the plug protrudes from an upper opening of the plug placement hole and functions as the raised portion, and an upper surface of the plug is at the same height as an upper surface of the raised portion.

6. A semiconductor manufacturing equipment member according to any one of claims 1 to 4, wherein the depth from the top surface of the small protrusion to the top surface of the raised portion is between 1 / 2 and 2 / 3 of the height from the reference surface to the top surface of the small protrusion.

7. A semiconductor manufacturing equipment member according to any one of claims 1 to 4, wherein the raised portion is ring-shaped in a plan view, and the outer diameter of the raised portion is larger than the outer diameter of the gas flow path and is equal to or smaller than the diameter of the electrostatic electrode opening.

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