Crystal Oscillator Device with Temperature Sensor

Abstract

A crystal oscillator plate (1) comprises an AT-cut crystal oscillator plate, and as a whole, has a rectangular, plate-like shape. The crystal oscillator plate (1) comprises an oscillating part (11), holding parts (13, 13t) connected to the oscillating part (11), and a frame body section (12) which is connected to the holding parts (13, 13t) and is positioned along the outer periphery of the oscillating part (11). Other than the holding parts (13, 13t), through-holes (14) are formed perimetrically between the oscillating part (11) and the frame body section (12). In addition, a thermistor flat single panel (40) is surface-bonded as a temperature sensor (4) onto a first sealing member (2) via a conductive resin adhesive (R1) and a resin adhesive (R2). The thermal conductivity of the conductive resin adhesive (R1) is greater than the thermal conductivity of the resin adhesive (R2).

Description

Technical Field

[0001] The present invention relates to a crystal oscillator device with a temperature sensor, in which a temperature sensor is attached to a crystal oscillator device.

Background Art

[0002] In recent years, with the increasing precision of various electronic devices, a temperature-compensated crystal oscillator circuit that compensates for frequency fluctuations due to changes in environmental temperature has been demanded. As a crystal oscillator device corresponding to this, a crystal oscillator with a temperature sensor, in which a temperature sensor such as a thermistor is attached to a crystal resonator, is widely used.

[0003] Such a crystal oscillator with a temperature sensor has a configuration in which a crystal oscillator is housed in a package made of ceramic, and a thermistor is attached to the outside thereof to detect the environmental temperature surrounding the crystal oscillator (see Patent Document 1).

[0004] In addition, depending on the application, the above-mentioned electronic devices may be required to be miniaturized and thinned. In such cases, an ultra-small or ultra-thin crystal oscillator device is required. For example, in mobile devices, wearable devices, etc., an ultra-small or ultra-thin crystal oscillator device is required.

[0005] As a crystal oscillator device corresponding to such a demand, a crystal oscillator device having a three-layer structure in which a crystal oscillator plate is hermetically sealed from above and below with a thin plate sealing member has been proposed (see Patent Document 2). In Patent Document 2, an example in which a thermistor is used as a function part in a crystal oscillator having a three-layer structure is disclosed.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0007] In Patent Document 1, a ceramic package having a storage portion opened in the vertical direction is used. A crystal oscillator is stored in the upper opening portion, electrically joined to the package, and a thermistor is stored in the lower opening portion and electrically joined to the package.

[0008] In this configuration, since a ceramic package is used and it has two storage portions, there is a problem that miniaturization and thinning are difficult. In Patent Document 2, a thermistor is formed on a crystal oscillator having a three-layer structure. However, regarding the joint portion between the crystal oscillator and the thermistor, referring to the drawings, it is joined in an extremely small area. Therefore, the transmitted heat is likely to dissipate, and appropriate temperature detection may not be possible. Eventually, the temperature related to the crystal oscillator may not be accurately detected, and appropriate temperature compensation may not be possible. In such a case, the electrical characteristics of this crystal oscillator device become unstable, and as a result, the operation of the electronic device using this may become unstable, which may reduce the reliability of the electronic device.

[0009] The present invention has been made in view of the above problems, and aims to provide a crystal oscillator device with a temperature sensor that can cope with ultra-miniaturization and ultra-thinning, stably and appropriately detect temperature fluctuations related to the crystal oscillator device, and has excellent electrical characteristics.

Means for Solving the Problems

[0010] The crystal oscillator device with a temperature sensor according to the present invention is a crystal oscillator device with a temperature sensor, comprising a crystal oscillator plate, a first sealing member joined to the upper surface of the crystal oscillator plate, and a second sealing member joined to the lower surface of the crystal oscillator plate, and a thermistor flat single plate as a temperature sensor. A plurality of electrode pads are formed on the first sealing member and the thermistor flat single plate, and the electrode pads of the first sealing member and the electrode pads of the thermistor flat single plate are surface-bonded by a conductive resin adhesive, and the first sealing member and the thermistor flat single plate are surface-bonded by a resin adhesive. More than half of the bonding surface of the thermistor flat single plate with the first sealing member is surface-bonded by the conductive resin adhesive and the resin adhesive, and the thermal conductivity of the conductive resin adhesive is greater than the thermal conductivity of the resin adhesive. In addition, on the flat single thermistor plate, a pair of the electrode pads formed on one main surface of the flat single thermistor plate and one common electrode pad formed on substantially the entire other main surface facing the pair of the electrode pads are provided. . Here, the thermistor flat single plate means a thermistor plate having a flat single-layer structure.

[0011] With the above configuration, since it is a three-layer crystal oscillator device in which a plate-shaped crystal oscillator plate, a first sealing member, and a second sealing member are joined respectively, a thin crystal oscillator device configuration can be achieved. Further, since it is a configuration in which a thermistor flat single plate is used and joined as a temperature sensor, not only stable electrical characteristics can be obtained, but also a crystal oscillator device with a temperature sensor corresponding to thinning and miniaturization can be obtained as compared with the case of using a general-purpose multilayer thermistor.

[0012] Also, when mounting a thermistor flat single plate as a temperature sensor on a crystal oscillator device, since more than half (50% - 100%) of the planar view area of the thermistor flat single plate is surface-bonded by the conductive resin adhesive and the resin adhesive on the surface of the first sealing member of the crystal oscillator device, sufficient heat circulation can occur between the crystal oscillator device and the thermistor flat single plate as a temperature sensor. As a result, the difference between the environmental temperature sensed by the thermistor flat single plate and the environmental temperature sensed by the crystal oscillator device disappears, and appropriate temperature detection can be achieved.

[0013] Since only a resin adhesive is used for the electrical and mechanical bonding and mechanical bonding between the crystal vibration device and the thermistor flat single plate, it is possible to absorb stress and impact on the thermistor flat single plate, which is likely to cause strength weakness due to thinning, and to eliminate cracks and chips in the thermistor flat single plate.

[0014] Also, in the first sealing member and the thermistor flat single plate, an electrode pad with high thermal conductivity is formed and bonded with a conductive resin adhesive having higher thermal conductivity than the resin adhesive, so that the heat flow between the crystal vibration device and the thermistor flat single plate can be smoothly performed while reacting sensitively to changes in the external environmental temperature. For this reason, the temperature related to the crystal vibration device can be detected more accurately. As a result, more accurate temperature compensation can be realized, and a more reliable crystal vibration device with stable electrical characteristics can be obtained.

[0015] In particular, in the case of a crystal vibration device having a three-layer structure including a crystal vibration plate, a first sealing member, and a second sealing member, the crystal vibration plate tends to follow changes in the environmental temperature. By combining the configuration of the present invention, a more desirable configuration can be obtained in which temperature information corresponding to temperature fluctuations of the crystal vibration plate can be detected.

[0016] In addition to the above configuration, the crystal vibration plate includes a vibration portion formed with a pair of excitation electrodes, a holding portion protruding from at least one location of the vibration portion, a through portion surrounding the outer periphery of the vibration portion, and a frame portion surrounding the outer periphery of the through portion and connected to the holding portion. The first sealing member and the second sealing member have a plate-like configuration, and the frame portion of the crystal vibration plate is mechanically bonded to the first sealing member and the second sealing member in a state where the vibration portion of the crystal vibration plate does not contact the first sealing member and the second sealing member. The thermistor flat single plate may be surface-bonded with the resin adhesive in a region including the center of gravity of the first sealing member at a portion that overlaps the vibration portion of the crystal vibration plate in plan view, and surface-bonded with the conductive resin adhesive at a portion that overlaps the frame portion of the crystal vibration plate in plan view.

[0017] According to the above configuration, the vibrating portion of the crystal diaphragm is connected by a holding portion protruding from at least one location, and is in a state of not contacting the first sealing member and the second sealing member, and the frame portion of the crystal diaphragm is mechanically joined to the first sealing member and the second sealing member. Therefore, the vibrating portion of the crystal diaphragm is less likely to be affected by external stress. In particular, when joining the thermistor flat single plate, it is difficult for the external stress caused by the conductive resin adhesive or the resin adhesive to be transmitted to the vibrating portion, so that the characteristics of the vibrating portion are stabilized.

[0018] In addition, since the thermistor flat single plate is surface-bonded with a resin adhesive in a region including the center of gravity of the first sealing member at a portion that overlaps the vibrating portion of the crystal diaphragm in a plan view, not only is it difficult for the external stress caused by the resin adhesive generated when joining the thermistor flat single plate to be transmitted to the vibrating portion, but it is also possible to suppress this external stress from being strongly applied to the thermistor flat single plate itself. In addition, since the heat flow between the crystal vibration device and the thermistor flat single plate can be more efficiently performed without waste through the center of gravity of the first sealing member, heat dissipation biased to one side and the like are suppressed, and a temperature difference with respect to the ambient temperature of each other is less likely to occur.

[0019] In addition, since the thermistor flat single plate is surface-bonded with a conductive resin adhesive having high thermal conductivity at a portion that overlaps the frame portion of the crystal diaphragm in a plan view, the direct heat transfer from the first sealing member to the crystal diaphragm is promoted, so that a sensitive heat flow between the crystal vibration device and the thermistor flat single plate corresponding to a change in the external environmental temperature can be performed. For this reason, the temperature related to the crystal vibration device can be detected more accurately.

[0020] The conductive resin adhesive has a configuration in which a conductive filler made of metal powder, metal pieces, etc. is added to the resin adhesive. By surface-bonding these conductive resin adhesives to the both electrode pads, due to the good thermal conductivity of the metal material, the temperature sensor can detect the temperature change of the crystal vibration device with less time lag.

[0021] In addition to the above configuration, the flat single plate thermistor may be coated with a resin material. For example, a resin material covering the entire outer surface of the flat single plate thermistor may be formed. In this configuration, the heat transmitted to the temperature sensor does not dissipate uselessly, so the temperature in the crystal oscillator device can be accurately detected.

[0022] Note that the temperature information (such as current value, voltage value, resistance value, etc.) detected by the flat single plate thermistor as this temperature sensor is connected to the outside through independent terminals. Then, through an external compensation circuit or the like, the frequency information in the crystal oscillator device can be appropriately temperature-compensated to obtain an accurate frequency.

[0023] A plurality of electrode pads are formed on the joint surface between the flat single plate thermistor and the first sealing member, and the total area of each electrode pad may be 40% to 85% of the planar view area of the flat single plate thermistor. The planar view area mentioned here refers to the projected area, and the area ratio refers to the total projected area of each electrode pad with respect to the projected area of the flat single plate thermistor.

[0024] The larger the contact area of the flat single plate thermistor with the crystal oscillator device, the more accurately the temperature related to the crystal oscillator device can be detected. Therefore, the electrode pads formed on the flat single plate thermistor are preferably larger with respect to the planar view area of the flat single plate thermistor. However, if it is too large, short circuits between adjacent electrode pads or short circuits due to conductive resin adhesives are likely to occur. When the contact area becomes small, the temperature detection accuracy of the crystal oscillator device decreases. Therefore, when the total area of each electrode pad is 40% to 85% of the area of the flat single plate thermistor, stable temperature detection can be performed.

[0025] The thermistor flat single plate as the temperature sensor is composed of a plate-shaped thermistor flat single plate (NTC thermistor flat single plate), a pair of electrode pads formed on one main surface of the thermistor flat single plate, and one common electrode pad formed on substantially the entire other main surface facing the pair of electrode pads. The pair of electrode pads may be conductively joined to the electrode pads of the first sealing member. In this configuration, the common electrode pad formed on substantially the entire other main surface of the thermistor flat single plate can be superimposed on the vibrating portion of the crystal vibrating plate, and can function as a shield to block the arrival of unnecessary noise and the like to the vibrating portion. Further, in the flat single thermistor plate, when the distance between one of the pair of the electrode pads and the common electrode pad is defined as G2a, the distance between the other of the pair of the electrode pads and the common electrode pad is defined as G2b, and the distance between the pair of the electrode pads is defined as G1, a configuration satisfying G2a + G2b < G1 may be employed. With such a setting, a desired resistance value can be obtained and the accuracy as a temperature sensor can be stabilized.

[0026] The thermistor flat single plate is manufactured by thick film forming techniques such as screen printing technology or doctor blade technology and firing technology, and a Mn-Fe-Ni based material is sintered and formed into a plate-shaped thermistor wafer. An electrode film (metal film) is formed on this plate-shaped thermistor wafer by sputtering, and patterning is performed using photolithography technology. Finally, the plate-shaped thermistor wafer is singulated to obtain individual thermistor flat single plates. Note that the material of the thermistor may be a Mn-Fe based material or the like.

[0027] A commonly used thermistor (NTC thermistor) has a structure in which a plurality of layers are laminated on a thermistor material via an electrode (metal) film by a lamination technique. In the above configuration, however, an electrode (metal) film is formed on the front and back of a single-layer thermistor flat single plate. By forming a pair of electrode pads on one main surface of this thermistor flat single plate and forming one common electrode pad on substantially the entire other main surface facing the pair of electrode pads, an extremely thin thermistor flat single plate can be obtained. These electrode films are formed by a film forming technique such as PVD like sputtering.

[0028] Note that the crystal vibrating plate may be an AT-cut or SC-cut crystal vibrating plate, or may be an X-Y cut crystal vibrating plate or the like.

Advantages of the Invention

[0029] According to the present invention, it is possible to cope with miniaturization and thinning, appropriately detect temperature fluctuations related to a crystal vibration device, and obtain a crystal vibration device with a temperature sensor having excellent electrical characteristics.

Brief Description of the Drawings

[0030]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Modes for Carrying Out the Invention

[0031] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0032] The crystal vibration device Xtl with a temperature sensor according to the embodiment of the present invention is composed of a crystal vibration device and a temperature sensor. As shown in FIG. 1, the crystal vibration device Xtl is composed of a crystal vibration plate 1, a first sealing member 2, and a second sealing member 3, and has a configuration in which the first sealing member 2, the crystal vibration plate 1, and the second sealing member 3 are stacked in this order. Further, the temperature sensor 4 is electrically joined to the upper surface of the crystal vibration device Xtl.

[0033] The crystal vibrating plate 1 is made of an AT-cut crystal vibrating plate and is rectangular plate-shaped as a whole. The crystal vibrating plate 1 comprises a vibrating portion 11, holding portions 13 and 13t connected to two corner portions of the vibrating portion 11, and a frame portion 12 disposed on the outer periphery of the vibrating portion 11 and connected to the holding portions 13 and 13t. A through portion 14 is formed in a circumferential shape between the vibrating portion 11 and the frame portion 12 except for the holding portions 13 and 13t.

[0034] The vibrating portion 11 is rectangular with opposing long sides and short sides and has four corner portions. Note that the vibrating portion 11 may be square when viewed in plan. Rectangular exciting electrodes 111 and 112 are formed on one main surface and the other main surface (front and back main surfaces) of substantially the central portion of the vibrating portion 11. Strip-shaped lead-out electrodes 111a and 112a are connected to the corner portions of each of the exciting electrodes 111 and 112 and are drawn out toward both ends of one side (the corner portion of the vibrating portion). The lead-out electrode 111a is drawn out to the frame portion 12 via the holding portion 13, and the lead-out electrode 112a is drawn out to the frame portion 12 via the holding portion 13t, and finally is drawn out to terminal electrodes 31 and 32 formed on a second sealing member 3 described later.

[0035] Specifically, the lead-out electrode 111a passes through the surface of the holding portion 13, is drawn out to the other main surface via a metal via (through metal) V1 formed in the frame portion 12, and is connected to a metal via V2 formed in the second sealing member 3 described later. The metal via V2 is electrically connected to a terminal electrode 31 formed on the other main surface of the second sealing member 3. The lead-out electrode 112a passes through the back surface of the holding portion 13t, is drawn out to the other surface of the crystal vibrating plate 1, and is electrically connected to a metal via V3 formed in the opposing second sealing member 3. The metal via V3 is electrically connected to a terminal electrode 32 formed on the other main surface of the second sealing member 3.

[0036] These exciting electrodes 111 and 112 and lead-out electrodes 111a and 112a are made of a multilayer metal film. For example, a Ti film is formed in contact with the crystal vibrating plate 1, and a multilayer structure in which an Au film is formed on the upper portion thereof. As an example of the thickness of each specific metal film, for example, a Ti film of 5 nm and an Au film of 200 nm can be given, but these may be changed according to desired characteristics.

[0037] At one side of the vibrating portion 11, a thick portion 11a is formed. The thick portion 11a is at one side in the X-axis direction and is formed across the entire one side extending in the Z'-axis direction. The thick portion 11a is formed thicker than the thickness of the vibrating portion 11.

[0038] As shown in FIG. 2, a holding portion 13 is provided at one corner C1 of the vibrating portion 11, and a holding portion 13t is provided at another corner C2. Each of the holding portions 13, 13t is connected to the frame portion 12. In the present embodiment, the vibrating portion 11, the holding portions 13, 13t, and the frame portion 12 are integrally formed from a crystal plate using photolithography technology and wet etching technology. Note that dry etching technology may be used instead of wet etching.

[0039] As shown in FIGS. 1 and 4, the holding portion 13 is configured to be thicker than the vibrating portion 11 and the thick portion 11a. A taper T2 on an inclined surface is formed from the thick portion 11a to the upper surface of the holding portion 13, and a taper T3 on an inclined surface is formed from the vibrating portion 11 to the holding portion 13. Also, although the holding portion 13 is connected to the frame portion 12, a taper T1 is formed on the upper surface from the holding portion 13 to the frame portion 12. With such a configuration, the respective thicknesses are set as the vibrating portion 11 < the thick portion 11a < the holding portion 13 < the frame portion 12. Note that the thicknesses of the thick portion 11a and the holding portion 13 may be equal. By forming these respective tapers, the boundary region can be rounded. Note that when the step of the boundary region is small or when the risk of disconnection is low, there is no practical problem even if the taper is not formed.

[0040] Specific dimensional examples of the crystal diaphragm 1 are shown below. The crystal diaphragm 1 uses a rectangular AT-cut crystal plate. Its outer dimensions are 1.2 mm in width and 1.0 mm in length. The outer dimensions of the vibrating part 11 are 0.7 mm in width and 0.7 mm in length. The width of the frame part 12 is 0.2 mm in width and 0.1 mm in length. The dimensions of the holding part 13 are 0.05 mm in width and 0.15 mm in length. Regarding the thickness of each component part, the thickness of the frame part 12 is 0.04 mm, the thickness of the holding part 13 is 0.03 mm, the thickness of the thick part 11a is 0.017 mm (17 μm), and the vibrating part 11 is 0.005 mm (5 μm). Note that it is preferable that the thickness of the thick part 11a has a thickness of 10 or more μm with respect to the thickness of the vibrating part 11 in terms of ensuring mechanical strength.

[0041] In addition, in this embodiment, a configuration in which thinning is performed only from one main surface of the crystal diaphragm 1 is adopted. For example, thinning is performed to a desired frequency (thickness) only from one main surface side by an etching technique. In this case, since etching is not performed on the other main surface side, it is possible to suppress a decrease in vibration characteristics due to roughening of the surface by etching. Note that a configuration in which thinning is performed from both main surfaces may also be adopted.

[0042] Circumferential sealing films S11 and S21 are formed on the front and back outer peripheral ends of the frame part 12. These sealing films, similar to the aforementioned electrode films, have a multilayer structure in which a Ti film is formed in contact with the crystal diaphragm 1 and an Au film is formed on top of it.

[0043] Also, at positions away from the holding parts 13 and 13t of the frame part 12 and on the inner peripheral side, connection electrodes 121 and 122 are formed. The connection electrodes 121 and 122 each consist of a strip-shaped metal film formed from the upper surface of the frame part 12 through the inner surface to the lower surface of the frame part 12. The upper parts of these connection electrodes 121 and 122 are connected to the terminal electrodes 31 and 32 of the first sealing member 2 through respective metal vias described later, and these terminal electrodes 31 and 32 are electrically connected to the electrode pads 41 and 42 of the temperature sensor 4 described later. Also, the lower parts of the connection electrodes 121 and 122 are also electrically connected to the terminal electrodes 33 and 34 of the second sealing member 3 through respective metal vias V4 and V5 described later.

[0044] The first sealing member 2 is made of a rectangular plate-shaped AT-cut crystal plate and has the same outer shape and outer size as the crystal vibrating plate 1. A circumferential sealing film S12 corresponding to the sealing film S11 is formed on the other main surface (the surface facing the crystal vibrating plate 1) of the first sealing member 2.

[0045] On one main surface of the first sealing member 2, electrode pads 21 and 22 are provided in parallel on a rectangle having a long side and a short side. The electrode pad 21 has an electrode drawn out to the other main surface via a metal via, and the electrode pad 22 has an electrode drawn out to the other main surface via a metal via. The electrode pads 21 and 22 are formed at the center position of the short side of the first sealing member 2 and at both ends in the long side direction (the Z' axis direction of the AT-cut crystal plate) of the first sealing member 2. Note that the electrode pads 21 and 22 may be formed at both ends on the short side (the X axis direction of the AT-cut crystal plate) according to the wiring configuration of the crystal vibrating plate 1.

[0046] The second sealing member 3 is made of a rectangular plate-shaped AT-cut crystal plate and has the same outer shape and outer size as the crystal vibrating plate 1. A circumferential sealing film S22 corresponding to the sealing film S21 is formed on the surface of the second sealing member 3 facing the crystal vibrating plate 1.

[0047] Moreover, terminal electrodes 31, 32, 33, and 34 are formed on the surface of the second sealing member 3 that does not face the crystal vibrating plate 1. Each of the terminal electrodes 31, 32, 33, and 34 has a rectangular shape and is formed at each corner of the second sealing member. The terminal electrodes 31 and 32 are electrically connected to the excitation electrodes 111 and 112, respectively, and the terminal electrodes 33 and 34 are electrically connected to the electrode pads 41 and 42 of the temperature sensor 4 described later. Note that the metal film constituting these terminal electrodes has a laminated structure of a Ti film, a NiTi film, and an Au film.

[0048] In addition, in the second sealing member 3, metal vias V2 penetrating through the front and back are formed in the vicinity of the region corresponding to the holding portion 13, and are electrically connected to the above-described metal via V1. Further, metal vias V3 penetrating through the front and back are formed in the vicinity of the region corresponding to the holding portion 13t. With such a configuration, the lead-out electrode 111a formed on the crystal vibrating plate 1 is connected to the terminal electrode 31 via the metal via V2, and the lead-out electrode 112a is connected to the terminal electrode 32 via the metal via V3. Furthermore, metal vias V4 and V5 corresponding to the connection electrodes 121 and 122 are respectively formed, and the metal vias V4 and V5 are electrically connected to the terminal electrodes 33 and 34. With such a configuration, the terminal electrodes 31 and 32 of the crystal vibration device Xtl and the terminal electrodes 33 and 34 of the temperature sensor are arranged side by side on the long side and face each other. Note that, by changing the design of the electrode wiring, the two terminal electrodes 31 and 32 of the crystal vibration device Xtl and the two terminal electrodes 33 and 34 of the temperature sensor may be arranged diagonally.

[0049] A temperature sensor 4 described later is electrically and mechanically connected to the electrode pads 21 and 22 of the first sealing member 2. The temperature sensor 4 has a rectangular shape and is an NTC thermistor flat single plate. The rectangular plate-shaped thermistor flat single plate 40 has a thickness G2. A common electrode 43 is formed on the entire one main surface of the thermistor flat single plate 40, and rectangular electrode pads 41 and 42 are formed on the other main surface at a constant distance G1 in the long side direction. The electrode pads 41 and 42 include the center position of the short side of the thermistor flat single plate 40 and are formed at both ends in the long side direction of the thermistor flat single plate 40. Note that the electrode pads 41 and 42 may be formed at both ends on the short side according to the wiring configuration of the thermistor flat single plate 40. In this configuration, by arranging and mounting the common electrode 43 formed on the entire one main surface of the thermistor flat single plate 40 at a position overlapping the vibrating portion 11 of the crystal vibrating plate 1, more preferably, the front and back exciting electrodes 111 and 112 formed on the vibrating portion 11, it can function as a shield to block the arrival of unnecessary noise etc. to the vibrating portion 11.

[0050] The temperature sensor 4 forms terminals as resistors with one electrode pad 41 and the other electrode pad 42 formed on the thermistor flat single plate 40. However, the conductive path flows from the one electrode pad 41 to the other electrode pad 42 via the common electrode 43. With such a configuration, the cross-sectional area of the conductive path can be greatly increased, and since it can be made into a path where the surfaces of the electrode pads 41, 42 and the common electrode 43 face each other, the resistance value can be lowered with a small area, the characteristics are likely to be stable, and the withstand voltage can also be improved.

[0051] By the way, when the electrode pads 41, 42 are configured to be close to each other, although it also depends on the applied voltage, the conductive path from the electrode pad 41 to 42 becomes dominant, and there were cases where the desired resistance value could not be obtained. Therefore, in implementation, the distance G2a between the electrode pad 41 and the common electrode 43, the distance G2b between the electrode pad 42 and the common electrode 43, and the distance G1 between the electrode pads 41, 42 are set such that G2a + G2b < G1. With such a setting, the desired resistance value can be obtained, and the accuracy of the temperature sensor 4 can be stabilized.

[0052] The larger the contact area of the temperature sensor 4 with the crystal vibration device Xtl, the more accurately the temperature related to the crystal vibration device Xtl can be detected. Therefore, it is better for the electrode pads 41, 42 formed on the temperature sensor 4 to be larger with respect to the area of the temperature sensor 4. However, if they are too large, short circuits between adjacent electrode pads 41, 42 or short circuits due to the conductive resin adhesive are likely to occur. When the contact area becomes small, the temperature detection accuracy of the crystal vibration device Xtl decreases. Therefore, depending on the desired resistance value, if the total area of each electrode pad 41, 42 is 40% to 85% of the area of the temperature sensor 4, stable temperature detection can be performed. If it is 40% or less, the electrode pads 41, 42 of the temperature sensor 4 become too small, and the temperature information of the crystal vibration device Xtl cannot be accurately detected. Also, when using a thermistor for the temperature sensor 4, its resistance value becomes too high, and the temperature detection ability of the temperature sensor 4 may decrease. Also, if it is 85% or more, the risk of short circuits including the conductive resin adhesive increases, and when a short circuit occurs, the temperature sensor 4 stops functioning.

[0053] Specific dimensional examples are shown below. The outer dimensions of the temperature sensor 4 (the outer dimensions of the thermistor) are 1.2 mm for the long side, 0.6 mm for the short side, and 0.05 mm for the thickness, and its area is 0.72 mm 2 The outer dimensions of each of the electrode pads 41 and 42 formed on the thermistor single plate 40 are 0.6 mm for the long side (the short side of the thermistor single plate 40) and 0.4 mm for the short side (the long side of the thermistor single plate 40), and its area is 0.24 mm 2 With such a configuration, the total area of the electrode pads 41 and 42 is set to about 66% of the area of the temperature sensor 4. Also, the distance G2a between the electrode pad 41 and the common electrode 43 and the distance G2b between the electrode pad 42 and the common electrode 43 are each 0.05 mm, and the distance G1 between the electrode pads 41 and 42 is set to 0.4 mm, and it is set so that G2a + G2b < G1 holds.

[0054] Another specific example is shown below. The outer dimensions of the temperature sensor 4 (the outer dimensions of the thermistor) are 0.8 mm for the long side, 0.6 mm for the short side, and 0.05 mm for the thickness, and its area is 0.48 mm 2 The outer dimensions of each of the electrode pads 41 and 42 formed on the thermistor single plate 40 are 0.52 mm for the long side (the short side of the thermistor single plate 40) and 0.3 mm for the short side (the long side of the thermistor single plate 40), and its area is 0.156 mm 2 With such a configuration, the total area of the electrode pads 41 and 42 is set to about 65% of the area of the temperature sensor 4. Also, the distance G2a between the electrode pad 41 and the common electrode and the distance G2b between the electrode pad 42 and the common electrode 43 are each 0.05 mm, and the distance G1 between the electrode pads 41 and 42 is set to 0.12 mm, and it is set so that G2a + G2b < G1 holds.

[0055] Still another specific example is shown below. The outer dimensions of the temperature sensor 4 (the outer dimensions of the thermistor) are 0.7 mm for the long side, 0.6 mm for the short side, and 0.04 mm for the thickness, and its area is 0.42 mm 2It becomes. Also, the outer dimensions of each of the electrode pads 41 and 42 formed on the thermistor flat single plate 40 are 0.58 mm in the long side (the short side of the thermistor flat single plate 40) and 0.3 mm in the short side (the long side of the thermistor flat single plate 40), and the area thereof is 0.174 mm 2 It becomes. With such a configuration, the total area of the electrode pads 41 and 42 is set to about 83% of the area of the temperature sensor 4. Also, the distance G2a between the electrode pad 41 and the common electrode and the distance G2b between the electrode pad 42 and the common electrode 43 are each 0.04 mm, and the distance G1 between the electrode pads 41 and 42 is set to 0.09 mm, and it is set so that G2a + G2b < G1 holds. Note that the above dimensions may be appropriately designed according to the size and characteristics of the crystal vibration device and the required specifications of the crystal vibration device with a temperature sensor.

[0056] The thermistor flat single plate 40 is formed by, for example, making a Mn-Fe-Ni-based material into a slurry together with a binder or the like, and creating a green sheet of a plate-shaped thermistor wafer using a thick film forming technique such as screen printing technology or doctor blade technology, and sintering and molding the plate-shaped thermistor wafer by a firing technique. Note that not only Mn-Fe-Ni-based materials but also Mn-Co-based or Fe-Ni-based materials may be used.

[0057] An electrode film (metal film) is formed on this plate-shaped thermistor wafer by sputtering, and patterning is performed using photolithography technology. As a specific metal material, a laminated structure of a Ti film, a NiTi film, and an Au film similar to the metal film constituting the terminal electrode may be adopted, or other metal film configurations may be used. When the laminated structure of the Ti film, the NiTi film, and the Au film is adopted, when the thermistor is finally soldered to the mounting substrate, solder erosion is less likely to occur and stable conductive bonding can be performed. Also, the metal film configurations of the electrode pads 41 and 42 and the metal film configuration of the common electrode 43 may be made different. For example, the metal film configuration of the electrode pads 41 and 42 may be a laminated structure of the Ti film, the NiTi film, and the Au film, and the metal film configuration of the common electrode 43 may be a laminated structure of the Ti film and the Au film.

[0058] In this way, by forming a metal film on the single-layer thermistor flat single plate 40 by means of thin film formation means such as sputtering, a thermistor flat single plate 40 with extremely thin thickness can be obtained. Note that the surface roughness of the thermistor flat single plate 40 may be reduced by lapping and polishing its surface in the state of a plate-shaped thermistor wafer. With such a configuration, the electrode film (metal film) can be stably formed, the manufacturing accuracy can be improved, and thus the performance as the temperature sensor 4 can be made highly accurate.

[0059] As shown in FIG. 4, the crystal vibration device Xtl has a configuration in which a first sealing member 2, a crystal vibration plate 1, and a second sealing member 3 are stacked in this order. As described above, each of these constituent members is made of a crystal plate, and its surface is a smooth surface by mirror polishing. As a specific example, it is preferable that the average surface roughness Ra is 0.3 to 0.1 nm. By forming the seal films S11, S12, S21, and S22 on such a smooth surface, the metal film (the uppermost Au film) on the surface is also in a very smooth surface state.

[0060] The bonding of the first sealing member 2 made of brittle crystal, the crystal vibration plate 1, and the second sealing member 3 made of brittle crystal and the crystal vibration plate 1 is performed by subjecting the surface of the Au of the metal film to surface treatment and then pressure-bonding the two by diffusion bonding (Au-Au diffusion bonding). As a result, the vibrating portion 11 of the crystal vibration plate 1 is hermetically sealed in a state surrounded by the sealing portions S1 (seal films S11, S12), S2 (seal films S21, S22), the respective sealing members 2, 3, and the frame portion 12. At this time, the vibrating portion 11 of the crystal vibration plate 1 does not contact the first sealing member 2 and the second sealing member 3, and the frame portion 12 of the crystal vibration plate 1 is mechanically joined to the first sealing member 2 and the second sealing member 3. Note that the inside of the hermetic seal is a vacuum or an inert gas atmosphere.

[0061] According to this embodiment, the vibrating portion 11 of the crystal diaphragm 1 is connected by the holding portions 13, 13t protruding only at two locations, and is in a state of not contacting the first sealing member 2 and the second sealing member 3. At the same time, the frame portion 12 of the crystal diaphragm 1 is mechanically joined to the first sealing member 2 and the second sealing member 3. Therefore, the vibrating portion 11 of the crystal diaphragm 1 is less likely to be affected by external stress. In particular, in order to make it difficult for the external stress caused by the conductive resin adhesive R1 and the resin adhesive R2 generated when joining the thermistor single plate 40 to be transmitted to the vibrating portion, the characteristics of the vibrating portion 11 are stabilized.

[0062] A temperature sensor 4 is mounted on the upper surface of the crystal oscillator device Xtl having the above configuration, that is, one main surface of the first sealing member 2. The electrode pads 21, 22 formed on the upper surface of the crystal oscillator device Xtl and the electrode pads 41, 42 formed on the temperature sensor 4 composed of the thermistor single plate 40 are surface-joined with the conductive resin adhesives R1, R1. At this time, the conductive resin adhesive R1 is surface-joined at a portion that overlaps the frame portion 12 of the crystal diaphragm 1 in a plan view.

[0063] The electrode pads 21, 22 are configured to have a larger area than the electrode pads 41, 42. As a result, the conductive resin adhesives R1, R1 can conductively join the crystal oscillator device Xtl and the temperature sensor 4 in a state having a fillet, so that the joining strength between the two can be improved. The conductive resin adhesive R1 has a configuration in which conductive fillers such as silver powder and silver flakes are added to a paste-like silicone-based resin bonding material, for example, and has excellent thermal conductivity.

[0064] Further, the temperature sensor 4 fills a blank region between the conductive resin adhesives R1, R1 in a region including the center of gravity O of the first sealing member 2 at a portion that overlaps the vibrating portion 11 of the crystal diaphragm 1 in a plan view, and the first sealing member 2 and the temperature sensor 4 are surface-joined by the resin adhesive R2. The resin adhesive R2 is composed of, for example, a paste-like epoxy-based resin bonding material, and has a configuration with a lower thermal conductivity than the conductive resin adhesive R1 and a configuration with a lower pencil hardness than the conductive resin adhesive R1.

[0065] In addition, soft (low pencil hardness) conductive resin adhesives R1 may be arranged at both ends in the axial direction of the crystal axis of the crystal where the coefficient of thermal expansion is larger. In the case of an AT-cut crystal plate, the plane is the X-axis and the Z'-axis, but since the coefficient of thermal expansion is smaller in the Z'-axis direction, softer conductive resin adhesives R1 may be arranged along the Z'-axis direction (at both ends in the Z'-axis direction).

[0066] Also, in the present embodiment, the coefficient of thermal expansion of the thermistor flat single plate 40 made of an Mn-Fe-Ni-based material is smaller than that of the first sealing member 2 made of crystal, and particularly a large thermal expansion difference occurs in the long side direction. Therefore, softer conductive resin adhesives R1 are arranged at both ends in the long side direction to mitigate the influence on thermal stress.

[0067] In the present embodiment, more than half of the planar view area of the temperature sensor 4 is surface-bonded by the conductive resin adhesive R1 and the resin adhesive R2 on the surface of the first sealing member 2. Specifically, about 66% of the planar view area of the temperature sensor 4 is surface-bonded by the conductive resin adhesive R1, and about 30% of the planar view area of the temperature sensor 4 is surface-bonded by the resin adhesive R2, so that a total of about 96% of the planar view area of the temperature sensor 4 is surface-bonded.

[0068] In the present embodiment, the electrical and mechanical bonding and the mechanical bonding between the crystal vibration device Xtl and the thermistor flat single plate 40 are surface-bonded only by each resin adhesive (the conductive resin adhesive R1 and the resin adhesive R2), so that stress and impact on the thermistor flat single plate 40, which is likely to cause strength weakness due to thinning, can be absorbed, and cracks and chips of the thermistor flat single plate 40 can be eliminated.

[0069] In addition, since the planar view area of the conductive resin adhesive R1 is larger than the planar view area of the resin adhesive R2, in addition to good heat conduction between the electrode pads, the temperature detection of the crystal oscillator device Xtl by the temperature sensor 4 can be measured with high precision in a state with little time lag. Note that the total planar view area formed by surface bonding with these two types of resin adhesives may be formed to be at least 50% or more. By configuring in this way, since heat can sufficiently flow between the crystal oscillator device Xtl and the thermistor single plate 40 as the temperature sensor 4, the difference between the environmental temperature sensed by the thermistor single plate 40 and the environmental temperature sensed by the crystal oscillator device Xtl disappears, and appropriate temperature detection can be achieved.

[0070] In addition, since the thermistor single plate 40 is surface-bonded with the resin adhesive R2 in the region including the center of gravity of the first sealing member 2 at the portion that overlaps the vibrating portion 11 of the crystal vibrating plate 1 in a planar view, not only is it difficult to transmit the influence of the external stress caused by the resin adhesive R2 generated when joining the thermistor single plate 40 to the vibrating portion 11, but it is also possible to suppress this external stress from being strongly applied to the thermistor single plate 40 itself. In addition, since heat can flow more efficiently between the crystal oscillator device Xtl and the thermistor single plate 40 without waste through the center of gravity O of the first sealing member 2, heat dissipation biased to one side is suppressed, and a temperature difference with respect to the mutual environmental temperature is less likely to occur.

[0071] In addition, since the thermistor single plate 40 is surface-bonded with the highly thermally conductive conductive resin adhesive R1 at the portion that overlaps the frame portion 12 of the crystal vibrating plate 1 in a planar view, the direct heat transfer from the first sealing member 2 to the crystal vibrating plate 1 is promoted, so that smooth heat flow between the sensitive crystal oscillator device Xtl and the thermistor single plate 40 in response to changes in the external environmental temperature can be achieved. For this reason, the temperature related to the crystal oscillator device Xtl can be detected more accurately.

[0072] Note that the conductive resin adhesive R1 and the resin adhesive R2 are not limited to the exemplified resin materials, and may be configured as an optimal combination from silicone-based resins, urethane-based resins, epoxy-based resins, etc.

[0073] In this embodiment, since the crystal oscillator device Xtl has a three-layer structure in which a plate-shaped crystal resonator 1, a first sealing member 2, and a second sealing member 3 are joined together, a thin crystal oscillator device structure can be achieved. Further, since the thermistor flat single plate 40 is used as the temperature sensor 4 and joined, not only stable electrical characteristics can be obtained, but also a crystal oscillator device with a temperature sensor corresponding to thinning and miniaturization can be obtained as compared with the case of using a general-purpose multilayer thermistor.

[0074] Also, at the ends of the first sealing member 2 and the thermistor flat single plate 40, electrode pads with high thermal conductivity are formed and joined by a conductive resin adhesive R1 having higher thermal conductivity than the resin adhesive R2, so that heat can flow between the crystal oscillator device Xtl and the thermistor flat single plate 40 while reacting sensitively to changes in the external environmental temperature. For this reason, the temperature related to the crystal oscillator device Xtl can be detected more accurately.

[0075] Note that for the crystal oscillator device Xtl having the above configuration, the temperature information (for example, current value, voltage value, resistance value, etc.) detected by the thermistor flat single plate 40 as the temperature sensor 4 is connected to the outside by independent terminal electrodes 33, 34. Then, by an external compensation circuit or the like, the frequency information in the crystal oscillator device Xtl can be appropriately temperature-compensated to obtain an accurate frequency.

[0076] According to this embodiment, the thick portion 11a is formed along substantially the entire area of one end side where the holding portions 13 and 13t are formed in the vibrating portion 11, and the other end side has a thickness configuration of a thin diaphragm corresponding to a high frequency. Therefore, the vibration excited in the vibrating portion 11 can be caused to vibrate in a state where it is less affected by the boundary conditions due to the thick portion 11a, thereby making it difficult for spurious and the like to occur, and also keeping the CI value (series resonance resistance) in a good state, and a crystal diaphragm 1 can be obtained. In addition, the mechanical strength of the vibrating portion 11 can be improved by the thick portion 11a. Note that, regarding the vibrating portion 11 of this embodiment, a configuration in which the thick portion 11a is not formed may also be adopted. In this case, the areas of the exciting electrodes 111 and 112 of the vibrating portion 11 can be formed larger.

[0077] Also, as described above, the holding portion 13 has a thickness greater than or equal to that of the thick portion 11a, and a tapered portion is formed between the frame portion 12 and the holding portion 13 and between the thick portion 11a and the vibrating portion 11. As described above, the boundary can be blunted by this taper formation. As a result, the lead-out electrode 111a drawn from the exciting electrode 111 to one end side of the crystal diaphragm 1 is formed on this tapered portion and does not pass through an acute corner region (step portion), so that a decrease in electrode conduction and electrode disconnection can be prevented. Thereby, a crystal diaphragm 1 having good electrical characteristics can be obtained.

[0078] According to this embodiment, the frame portion 12 and the vibrating portion 11 are connected by a plurality of holding portions 13 and 13t, but the thickness of the holding portion 13t is smaller than the thickness of the holding portion 13. Therefore, while stabilizing the mechanical strength by holding with a plurality of holding portions, by providing the holding portion 13t having a small (thin) thickness, it is possible to suppress the inhibition of the vibration of the vibrating portion 11. Thereby, a decrease in the electrical characteristics as the crystal vibration device Xtl can be suppressed, and practical electrical performance can be ensured. Also, not limited to this embodiment, a configuration in which the vibrating portion 11 is connected only at one location of the holding portion 13 may be adopted.

[0079] In addition, in the crystal vibrating plate 1, instead of the through-hole portion 14, this may be formed of a thin-walled portion. In this case, the vibrating portion 11 is connected to the frame body portion 12 by the holding portion and the thin-walled portion.

[0080] In addition, in the present embodiment, although a multilayer structure of Ti and Au is exemplified as an example of the metal film of the exciting electrode and the metal film for sealing, it is not limited to this metal film. For example, a multilayer structure of Ti, NiTi, and Au may be used.

[0081] Also, the joining of each of the sealing members 2 and 3 and the crystal vibrating plate 1 was performed by the diffusion bonding method. However, for example, brazing using an AuSn alloy brazing material may be used, or other brazing materials such as Sn alloy brazing may be used. In the case of this brazing, the metal film structure is also different. For example, a structure in which an Ag or Cu film is formed on a Cr underlayer, or a structure in which an alloy film with Au is formed may be used.

[0082] In the above description, the materials of the first sealing member 2 and the second sealing member 3 used a crystal plate. However, instead of the crystal plate, a sealing body made of another brittle material such as a glass material or a ceramic material may be used. Also, although the shape was exemplified as a plate-like structure, a concave portion may be provided at a position facing the crystal vibrating plate 1. When the concave portion is provided in this way, the opportunity of contact between the vibrating portion 11 and the sealing member can be reduced, so that the characteristics of the crystal vibration device Xtl can be stabilized.

[0083] In addition, the temperature sensor 4 has a configuration in which a common electrode 43 is formed on the entire one main surface, and electrode pads 41 and 42 are formed on the other main surface with a constant distance G1 in the long side direction. However, a configuration in which only divided electrodes are formed on the other main surface may be used. Also, not limited to the NTC thermistor, it may be replaced with a PTC thermistor.

[0084] Another embodiment 1 will be described with reference to FIG. 7. In FIG. 7, the detailed configuration of the crystal vibration device Xtl is omitted. It is a configuration in which the temperature sensor 4 is mounted on the upper surface of the crystal vibration device Xtl, but the configuration of the temperature sensor 4 is different from that of the above embodiment.

[0085] Specifically, the temperature sensor 4 has a configuration in which electrode pads 44 and 45 are formed on the other main surface of the thermistor flat single plate 40, and an electrode gap G3 is formed. However, no electrode film is formed on one main surface of the thermistor flat single plate 40. Therefore, a conductive path is formed between the electrode pads 44 and 45, and it functions as a thermistor.

[0086] By joining the electrode pads 44 and 45 to the electrode pads 23 and 24 on the upper surface of the first sealing member 2 with a conductive resin adhesive R1, the two electrode pads are conductively surface-joined, and thus the two are joined in a state of good thermal conductivity. In this embodiment, a resin adhesive R2 with good thermal conductivity is filled between the conductive joining materials. With these configurations, the other main surface of the temperature sensor 4 is in a state of being surface-joined to the crystal oscillator device Xtl over the entire surface.

[0087] In this embodiment, the temperature sensor 4 composed of the thermistor flat single plate 40 is configured to be coated with a resin material R3. The resin material R3 is configured to cover the upper surface of the crystal oscillator device Xtl, and is configured to cover the electrode pads 23 and 24 provided on the temperature sensor 4 and the crystal oscillator device Xtl, the conductive resin adhesive R1, and the resin adhesive R2. The resin material R3 used here has a configuration in which silica (SiO 2 ) filler is added to an epoxy resin, and has a lower thermal conductivity than the conductive resin adhesive R1. Note that as the resin material R3, other resin materials such as urethane resin and silicone resin may be used in addition to the epoxy resin. With such a configuration, an effect of suppressing the heat detected by the temperature sensor 4 from escaping to the outside can be obtained.

[0088] With the configuration of this embodiment, the temperature variation of the crystal oscillator device Xtl can be detected with little time lag by the temperature sensor 4 via the conductive resin adhesive R1 and the resin adhesive R2. Also, since the temperature sensor 4 is covered with the resin material R3 having a lower thermal conductivity than the conductive resin adhesive R1 formed at the end, the temperature absorbed by the temperature sensor 4 does not leak to the outside. As a result, the operating temperature of the crystal oscillator device Xtl can be accurately detected, enabling high-precision temperature detection. In addition to the temperature sensor 4, IC components equipped with an oscillation circuit and a temperature compensation circuit may be mounted on the upper surface of the crystal oscillator device Xtl and conductively joined to the crystal oscillator device Xtl and the temperature sensor 4. With such a configuration, a crystal oscillator device Xtl constituting a temperature-compensated crystal oscillator can be obtained.

[0089] Another second embodiment will be described with reference to FIG. 8. In FIG. 8, the detailed configuration of the crystal oscillator device Xtl is omitted. The temperature sensor 4 is mounted on the upper surface of the crystal oscillator device Xtl. The configuration of the temperature sensor 4 is the same as that of the above-described other first embodiment (see FIG. 7), but the arrangement of the temperature sensor 4 is different from that of the above-described other first embodiment.

[0090] Electrode pads 23 and 24 are formed on the upper surface of the first sealing member 2. These electrode pads 23 and 24 are formed biased to the left side in the drawing, different from the above-described other first embodiment (see FIG. 7). As a result, a region where no electrode pads are formed can be secured on the upper surface of the first sealing member 2. This region can be used as an adjustment region 25. When the first sealing member 2 is made of a light-transmissive material, the adjustment region 25 can transmit an energy beam B such as a laser beam. Therefore, by irradiating the metal film formed on the crystal vibrating plate 1 with the energy beam B, a part of these metal films can be removed, etc., to adjust the frequency of the crystal oscillator device Xtl.

[0091] Further, a metal film for adjustment is formed in advance inside the first sealing member 2, and by irradiating the metal film for adjustment with an energy beam B, the metal film for adjustment is vaporized and adhered to the metal film formed on the crystal vibrator 1, whereby the frequency of the crystal vibration device Xtl can be adjusted.

[0092] Then, a resin material R3 is coated and formed over the entire upper surface (one main surface) of the first sealing member 2. As a result, the entire temperature sensor 4 is also covered with the resin material R3. Note that the resin material R3 may be formed only in the region where the temperature sensor 4 is mounted. In this case, since the adjustment region 25 is not covered with the resin material R3, there is an advantage that frequency adjustment by the energy beam B can be performed after the temperature sensor 4 is joined.

[0093] According to the present embodiment, since the temperature sensor 4 is joined to the crystal vibration device Xtl over substantially the entire other main surface with the conductive resin adhesive R1 and the resin adhesive R2, the temperature sensor 4 can surely and accurately capture the temperature change of the crystal vibration device Xtl. Further, by covering with the resin material R3, heat dissipation can also be suppressed. With these configurations, a crystal vibration device with a temperature sensor capable of performing highly accurate temperature detection can be obtained. Furthermore, due to the adjustment region 25, the frequency of the crystal vibration device Xtl can be adjusted after hermetic sealing or after the temperature sensor 4 is attached, so that the electrical characteristics can be improved.

[0094] The embodiments disclosed this time are illustrative in all respects and are not a basis for limiting interpretation. Therefore, the technical scope of the present invention is not interpreted only by the above-described embodiments, but is defined based on the description of the claims. Also, all modifications within the meaning and scope equivalent to the claims are included.

[0095] This application claims priority based on Japanese Patent Application No. 2021-174379 filed in Japan on October 26, 2021. By referring to this, all of its contents are incorporated into this application.

Explanation of Reference Numerals

[0096] Xtl crystal vibration device 1 crystal vibration plate 11 vibration part 111, 112 exciting electrodes 111a, 112a lead-out electrodes 12 frame part 13, 13t holding parts 14 through-hole part 2 first sealing member 3 second sealing member 4 temperature sensor 40 thermistor flat single plate S11, S12, S21, S22 sealing films S1, S2 sealing parts T1, T2, T3 tapers V1, V2, V3, V4, V5 metal vias R1 conductive resin adhesive R2 resin adhesive R3 resin material

Claims

1. A crystal oscillator device comprising a crystal vibrating plate, a first sealing member joined to the upper surface of the crystal vibrating plate, and a second sealing member joined to the lower surface of the crystal vibrating plate, A crystal oscillator device with a temperature sensor, comprising a thermistor flat single plate as a temperature sensor, A plurality of electrode pads are formed on the first sealing member and the thermistor flat single plate, and the electrode pads of the first sealing member and the electrode pads of the thermistor flat single plate are surface-joined by a conductive resin adhesive, The first sealing member and the thermistor flat single plate are surface-joined by a resin adhesive, and more than half of the joint surface of the thermistor flat single plate with the first sealing member is surface-joined by the conductive resin adhesive and the resin adhesive, The thermal conductivity of the conductive resin adhesive is greater than the thermal conductivity of the resin adhesive, The thermistor flat single plate is provided with a pair of the electrode pads formed on one main surface of the thermistor flat single plate and one common electrode pad formed on substantially the entire other main surface facing the pair of the electrode pads. A crystal oscillator device with a temperature sensor, characterized by this.

2. In the crystal oscillator device with a temperature sensor according to Claim 1, The crystal vibrating plate has a configuration including a vibrating portion formed with a pair of exciting electrodes, a holding portion protruding from at least one location of the vibrating portion, a through portion surrounding the outer periphery of the vibrating portion, and a frame portion surrounding the outer periphery of the through portion and connected to the holding portion, The first sealing member and the second sealing member have a plate-like configuration, The frame portion of the crystal vibrating plate and the first sealing member and the second sealing member are mechanically joined in a state where the vibrating portion of the crystal vibrating plate does not contact the first sealing member and the second sealing member, The thermistor flat single plate is surface-joined by the resin adhesive in a region including the center of gravity of the first sealing member at a portion that overlaps the vibrating portion of the crystal vibrating plate in a plan view, and is surface-joined by the conductive resin adhesive at a portion that overlaps the frame portion of the crystal vibrating plate in a plan view. A crystal oscillator device with a temperature sensor, characterized by this.

3. In the crystal oscillator device with a temperature sensor according to Claim 1 or 2, The thermistor flat single plate is coated with a resin material. A crystal oscillator device with a temperature sensor, characterized by this.

4. In the crystal oscillator device with a temperature sensor according to Claim 1 or 2, In the thermistor flat single plate, when the distance between one of the pair of electrode pads and the common electrode pad is G2a, the distance between the other of the pair of electrode pads and the common electrode pad is G2b, and the distance between the pair of electrode pads is G1, a crystal vibration device with a temperature sensor, characterized in that G2a + G2b < G1 is satisfied.

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